TW202201685A - Lead frame, method for manufacturing same, and method for manufacturing lead frame package - Google Patents

Lead frame, method for manufacturing same, and method for manufacturing lead frame package Download PDF

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TW202201685A
TW202201685A TW110123181A TW110123181A TW202201685A TW 202201685 A TW202201685 A TW 202201685A TW 110123181 A TW110123181 A TW 110123181A TW 110123181 A TW110123181 A TW 110123181A TW 202201685 A TW202201685 A TW 202201685A
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lead frame
base material
manufacturing
thickness direction
frame base
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TW110123181A
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TWI838632B (en
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石橋貴弘
平山慎司
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日商三井高科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

A lead frame includes a penetrating portion formed by etching and penetrating the lead frame along a thickness direction and a pair of side surfaces extending in a longitudinal direction, in which each of the pair of side surfaces includes a shear surface and a fracture surface adjacent to each other along the thickness direction.

Description

引線框架及其製造方法以及引線框架封裝件的製造方法Lead frame and method of making the same, and method of making a lead frame package

本發明涉及引線框架及其製造方法以及引線框架封裝件的製造方法。The present invention relates to a lead frame, a method of manufacturing the same, and a method of manufacturing a lead frame package.

引線框架基材透過在設有抗蝕膜的基礎上進行蝕刻而被加工為預定的圖案。如果將引線框架基材浸泡於蝕刻液，則基材的側部的中心部凹陷的現象已被公眾所知。如果產生這種凹陷，則形成凹陷的突起在搬送中和後續製程時容易斷裂而產生金屬片。如果這種金屬片附著到引線框架以及用所述引線框架形成的引線框架封裝件，則會成為發生短路的重要原因。為了抑制這種情況，在日本特開2005-142333號公報提出的技術中，使用相對配置的輥，將蝕刻處理後的引線框架基材的寬度方向端部壓潰。The lead frame base material is processed into a predetermined pattern by etching with a resist film provided. When a lead frame base material is immersed in an etching solution, the phenomenon that the center part of the side part of a base material sinks is known. If such a depression is generated, the protrusion forming the depression is likely to be broken during conveyance and subsequent processes, and a metal piece will be generated. If such a metal sheet is attached to the lead frame and the lead frame package formed with the lead frame, it can be a significant cause of short circuits. In order to suppress this, in the technique proposed in Japanese Patent Application Laid-Open No. 2005-142333, oppositely arranged rollers are used to crush the widthwise end portions of the lead frame base material after the etching process.

引線框架封裝件的微細化和高性能化不斷發展。與此相伴，引線框架也需要具有更高的可靠性。因此，還需要抑制以往不成為問題的微細金屬片的產生。The miniaturization and high performance of lead frame packages are constantly advancing. Along with this, the lead frame also needs to have higher reliability. Therefore, it is also necessary to suppress the generation of fine metal flakes which have not been a problem in the past.

在此，本發明的一個方式提供可抑制微細金屬片的產生的引線框架及其製造方法。此外，本發明的一個方式提供透過使用可抑制微細金屬片的產生的引線框架，從而能製造可靠性優異的引線框架封裝件的製造方法。Here, one embodiment of the present invention provides a lead frame capable of suppressing the generation of fine metal flakes, and a method for manufacturing the same. Moreover, one aspect of this invention provides the manufacturing method of the lead frame package which is excellent in reliability by using the lead frame which can suppress the generation|occurence|production of a fine metal piece.

引線框架具有透過蝕刻形成的沿著厚度方向貫穿的貫穿部，以及在長邊方向延伸的一對側面，所述一對側面具備沿著所述厚度方向彼此相鄰的剪切面和斷裂面。The lead frame has a penetration portion formed by etching and penetrating in the thickness direction, and a pair of side surfaces extending in the longitudinal direction, the pair of side surfaces having a shear surface and a fracture surface adjacent to each other in the thickness direction.

引線框架的製造方法具有用模具將帶狀的引線框架基材的側部沿著厚度方向切斷的切斷製程，所述帶狀的引線框架基材具有透過蝕刻形成的沿著所述厚度方向貫穿的貫穿部。The manufacturing method of a lead frame includes a cutting process of cutting a side portion of a strip-shaped lead frame base material having a cut along the thickness direction formed by etching with a mold. penetrating part.

引線框架封裝件的製造方法包括：在上述的引線框架或透過上述的製造方法得到的引線框架上設置半導體元件的製程；對所述半導體元件進行樹脂密封而製作樹脂密封體的製程；以及將所述樹脂密封體單片化的製程。The manufacturing method of the lead frame package includes: a process of arranging a semiconductor element on the above-mentioned lead frame or a lead frame obtained by the above-mentioned manufacturing method; a process of resin-sealing the semiconductor element to make a resin sealing body; The process of singulating the resin sealing body is described.

以上關於本發明內容的說明及以下實施方式的說明係用以示範與解釋本發明的原理，並且提供本發明的專利申請範圍更進一步的解釋。The above description of the content of the present invention and the description of the following embodiments are used to demonstrate and explain the principle of the present invention, and provide further explanation of the scope of the patent application of the present invention.

在下面的詳細說明中，出於說明的目的，為了提供對所公開的實施方式的徹底的理解，提出了許多具體的細節。然而，顯然可以在沒有這些具體細節的前提下實施一個或更多的實施方式。在其它的情況下，為了簡化製圖，示意性地示出了公知的結構和裝置。In the following detailed description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawings.

本發明的一個方式的引線框架具有透過蝕刻形成的沿著厚度方向貫穿的孔部（貫穿部），以及在長邊方向延伸的一對側面，所述一對側面具備沿著所述厚度方向彼此相鄰的剪切面和斷裂面。在所述引線框架中，在長邊方向延伸的一對側面具備剪切面和斷裂面。因此，減少了由蝕刻產生的突起。因此，在加工所述引線框架時以及用所述引線框架製造引線框架封裝件時，可以抑制突起折斷而產生微細金屬片。A lead frame according to one aspect of the present invention includes a hole (penetrating portion) formed by etching and penetrating in the thickness direction, and a pair of side surfaces extending in the longitudinal direction, the pair of side surfaces having each other along the thickness direction Adjacent shear planes and fracture planes. In the lead frame, a pair of side surfaces extending in the longitudinal direction includes a sheared surface and a fractured surface. Therefore, protrusions caused by etching are reduced. Therefore, when the lead frame is processed and a lead frame package is manufactured using the lead frame, it is possible to suppress the breakage of the protrusions and the generation of fine metal pieces.

優選上述引線框架的在長邊方向延伸的所述一對側面具有沿著所述厚度方向延伸的凹陷部。具有這種凹陷部的側面能抑制在相同位置上的重複切斷。由此，可以抑制毛刺和切削屑的產生以及伴隨切斷失誤的變形等。因此，可以進一步提高引線框架的可靠性。Preferably, the pair of side surfaces extending in the longitudinal direction of the lead frame has a recessed portion extending in the thickness direction. The side surface having such a recessed portion can suppress repeated cutting at the same position. Thereby, the generation of burrs and chips, and deformation due to cutting errors can be suppressed. Therefore, the reliability of the lead frame can be further improved.

在上述引線框架中，優選沿著所述厚度方向的所述剪切面的長度與沿著所述厚度方向的所述斷裂面的長度之比為1以上。由此，可以充分提高側面的尺寸精度。In the above-mentioned lead frame, it is preferable that the ratio of the length of the sheared surface along the thickness direction to the length of the fracture surface along the thickness direction is 1 or more. Thereby, the dimensional accuracy of the side surface can be sufficiently improved.

在上述引線框架中，優選在長邊方向延伸的所述一對側面中的所述剪切面和所述斷裂面，在雙方的側面中沿著所述厚度方向以相同順序排列。由此，在用輸送輥等搬送引線框架時，可以順暢地搬送引線框架。In the above-mentioned lead frame, it is preferable that the shear plane and the fracture plane of the pair of side surfaces extending in the longitudinal direction are arranged in the same order along the thickness direction on both side surfaces. Thereby, when the lead frame is conveyed by the conveyance roller or the like, the lead frame can be conveyed smoothly.

在上述引線框架中，優選上述貫穿部包含導孔。所述導孔的內壁面具有沿著厚度方向彼此相鄰的剪切面和斷裂面。例如可以透過採用模具的切料加工來形成這種導孔。在這種情況下，與透過蝕刻形成導孔的情況相比，能夠減少形成於導孔的成為產生微細金屬片的重要原因的突起。因此，在為了定位而將銷插入導孔時，能夠抑制內壁面被刮掉而產生微細金屬片。In the lead frame described above, it is preferable that the penetration portion includes a via hole. The inner wall surface of the guide hole has a shear surface and a fracture surface adjacent to each other in the thickness direction. Such pilot holes can be formed, for example, by cutting with a die. In this case, compared with the case where the via hole is formed by etching, it is possible to reduce the number of protrusions formed in the via hole, which are an important cause of the generation of fine metal flakes. Therefore, when the pin is inserted into the guide hole for positioning, the inner wall surface can be prevented from being scraped off and the generation of fine metal pieces can be suppressed.

本發明的一個方式的引線框架的製造方法具有用模具將帶狀的引線框架基材的側部沿著厚度方向切斷的切斷製程，所述帶狀的引線框架基材具有透過蝕刻形成的沿著所述厚度方向貫穿的貫穿部。A method for producing a lead frame according to an aspect of the present invention includes a cutting process of cutting a side portion of a tape-shaped lead frame base material having a metal strip formed by etching in the thickness direction with a mold. A penetration portion penetrating along the thickness direction.

如果進行引線框架基材的蝕刻，則有時在側部會產生成為微細金屬片的重要原因的突起。在上述製造方法中，用模具將蝕刻過的引線框架基材的側部切斷。因此，可以除去側部中的突起。因此，按照這種製造方法得到的引線框架，能夠抑制在切斷製程後的製程等中突起折斷而產生微細金屬片。When the lead frame base material is etched, protrusions, which are important causes of fine metal pieces, may be generated in the side portions. In the above-described manufacturing method, the side portion of the etched lead frame base material is cut with a mold. Therefore, the protrusions in the side portions can be removed. Therefore, in the lead frame obtained by such a manufacturing method, it is possible to prevent the protrusions from being broken during the process or the like after the cutting process, thereby preventing the generation of fine metal pieces.

優選上述製造方法還具有形成上述貫穿部並透過蝕刻來除去所述引線框架基材的側部的至少一部分的蝕刻製程。此外，優選在切斷製程中用所述模具將透過蝕刻而露出的所述引線框架基材的所述側部切斷。按照這種製造方法得到的引線框架，能夠抑制在切斷製程後的製程等中突起折斷而產生微細金屬片。Preferably, the manufacturing method further includes an etching process of forming the penetration portion and removing at least a part of the side portion of the lead frame base material by etching. Moreover, it is preferable to cut|disconnect the side part of the said lead frame base material exposed by etching with the said metal mold|die in a cutting process. In the lead frame obtained by such a manufacturing method, it is possible to prevent the protrusions from being broken during the process or the like after the cutting process, thereby preventing the generation of fine metal pieces.

上述製造方法中，優選透過用所述模具將所述引線框架基材的所述側部切斷而得到的切斷面，具備沿著厚度方向彼此相鄰的剪切面和斷裂面。此外，上述製造方法中，優選沿著所述引線框架的厚度方向的剪切面的長度與沿著所述厚度方向的斷裂面的長度之比為1以上。由此，可以充分提高側面的尺寸精度。In the above production method, it is preferable that the cut surface obtained by cutting the side portion of the lead frame base material with the mold has a sheared surface and a fractured surface adjacent to each other in the thickness direction. Further, in the above manufacturing method, it is preferable that the ratio of the length of the sheared surface along the thickness direction of the lead frame to the length of the fracture surface along the thickness direction is 1 or more. Thereby, the dimensional accuracy of the side surface can be sufficiently improved.

在上述的切斷側部的切斷製程中，優選透過使用具有突出部的所述模具將所述引線框架基材的所述側部切斷，從而在切斷面形成從一方的主面到達另一方的主面的凹陷部。由此，在分為多次用模具切斷側部的情況下，可以抑制二次切削導致的毛刺和切削屑的產生以及伴隨切斷失誤的變形等。因此，可以進一步提高引線框架的可靠性。In the above-described cutting process for cutting the side portion, it is preferable that the side portion of the lead frame base material is cut by using the mold having the protruding portion, so that the cut surface is formed to reach from one main surface. The concave portion of the other main surface. Thereby, when the side portion is divided into a plurality of times to be cut with a die, the generation of burrs and chips caused by secondary cutting, deformation due to cutting errors, and the like can be suppressed. Therefore, the reliability of the lead frame can be further improved.

上述製造方法中，優選上述貫穿部包含導孔。而且，在上述切斷製程中，優選由使用所述模具切斷的上述引線框架基材的所述側部中的所述導孔對所述引線框架基材進行定位，來切斷所述引線框架基材的所述側部。如果是這種側部，則不受引線框架的結構的制約，能夠以高自由度設定導孔的個數和尺寸。由此，引線框架基材的位置對準精度提高，所以能夠提高加工精度。此外，可以有效利用模具，所以能夠減少模具成本和設備成本。In the above-described manufacturing method, it is preferable that the penetration portion includes a guide hole. Further, in the cutting process, it is preferable that the lead frame base material is positioned by the guide hole in the side portion of the lead frame base material cut using the mold to cut the lead wire the side portion of the frame substrate. With such a side portion, the number and size of the via holes can be set with a high degree of freedom without being restricted by the structure of the lead frame. Thereby, since the positional alignment accuracy of the lead frame base material is improved, the processing accuracy can be improved. In addition, since the mold can be effectively used, the mold cost and the equipment cost can be reduced.

本發明的一個方式的引線框架封裝件的製造方法包括：在上述的任意的引線框架或利用上述的任意的製造方法得到的引線框架上設置半導體元件的製程；對所述半導體元件進行樹脂密封而製作樹脂密封體的製程；以及將樹脂密封體單片化的製程。A method of manufacturing a lead frame package according to one aspect of the present invention includes: a process of arranging a semiconductor element on the above-mentioned arbitrary lead frame or a lead frame obtained by the above-mentioned arbitrary manufacturing method; The process of making the resin sealing body; and the process of singulating the resin sealing body.

上述引線框架封裝件的製造方法由於採用上述的任意的引線框架，所以在製造引線框架封裝件時，能夠抑制微細金屬片的產生。因此，例如能夠減少因微細金屬片混入樹脂密封體的內部而產生的短路等故障。因此，可以製造可靠性優異的引線框架封裝件。In the manufacturing method of the above-mentioned lead frame package, since any of the above-mentioned lead frames is used, it is possible to suppress the generation of fine metal pieces when manufacturing the lead frame package. Therefore, for example, it is possible to reduce failures such as short circuits caused by the inclusion of fine metal pieces into the resin sealing body. Therefore, a lead frame package excellent in reliability can be manufactured.

按照本發明的上述方式，能夠提供一種可抑制微細金屬片的產生的引線框架及其製造方法。此外，能夠提供一種透過使用可抑制微細金屬片的產生的引線框架，從而能製造可靠性優異的引線框架封裝件的引線框架封裝件的製造方法。According to the above aspect of the present invention, it is possible to provide a lead frame capable of suppressing the generation of fine metal pieces, and a method for manufacturing the same. In addition, it is possible to provide a method of manufacturing a lead frame package that can manufacture a lead frame package with excellent reliability by using a lead frame that can suppress the generation of fine metal pieces.

以下，有時參照附圖，說明一些實施方式。但是，以下的實施方式是用於說明本發明的技術的例示，並不是旨在將本發明的技術限定於以下的內容。在說明中，針對相同部件或具有相同功能的部件使用相同附圖標記，有時省略重複說明。另外，各構件的尺寸比率不限於圖示的比率。Hereinafter, some embodiments will be described with reference to the accompanying drawings in some cases. However, the following embodiments are examples for explaining the technology of the present invention, and are not intended to limit the technology of the present invention to the following contents. In the description, the same reference numerals are used for the same components or components having the same function, and overlapping descriptions may be omitted. In addition, the dimension ratio of each member is not limited to the ratio shown in figure.

圖1是一個實施方式的引線框架的立體圖。引線框架100呈長方體形狀，具有矩形的一對主面10、在長邊方向延伸的一對側面12和在短邊方向延伸的一對側面14。主面10具有區域50，在區域50形成有多個單位框架。本實施方式中，劃分為三個區域50。對此，區域50的個數沒有特別限定，可以是一個，也可以是四個以上。沿著長邊方向的側面12的長度例如可以為200～400mm。此外，沿著短邊方向的側面14的長度例如可以為40～150mm。引線框架100的厚度可以為0.05～1mm。FIG. 1 is a perspective view of a lead frame according to an embodiment. The lead frame 100 has a rectangular parallelepiped shape, and has a pair of rectangular main surfaces 10 , a pair of side surfaces 12 extending in the longitudinal direction, and a pair of side surfaces 14 extending in the short-side direction. The main surface 10 has a region 50 , and a plurality of unit frames are formed in the region 50 . In this embodiment, it is divided into three areas 50 . In this regard, the number of the regions 50 is not particularly limited, and may be one or four or more. The length of the side surface 12 along the longitudinal direction may be, for example, 200 to 400 mm. In addition, the length of the side surface 14 along the short-side direction may be, for example, 40 to 150 mm. The thickness of the lead frame 100 may be 0.05˜1 mm.

引線框架100在區域50的外側具有相當於貫穿部的導孔20。導孔20可以用於在製造引線框架100時或加工引線框架100時的定位。另外，導孔20的個數和形狀沒有特別限定。導孔20在厚度方向上貫穿引線框架100。在另一些實施方式中也可以不具有導孔20。The lead frame 100 has a via hole 20 corresponding to a penetration portion outside the region 50 . The guide holes 20 may be used for positioning during manufacture of the lead frame 100 or during processing of the lead frame 100 . In addition, the number and shape of the guide holes 20 are not particularly limited. The via hole 20 penetrates the lead frame 100 in the thickness direction. In other embodiments, the guide hole 20 may not be provided.

圖2是引線框架100的一部分的俯視圖。區域50具有九個（三個×三個）單位框架55。各單位框架55具有在一對主面10相對的方向、即引線框架100的厚度方向上貫穿的貫穿部。透過蝕刻形成貫穿部。另外，主面10中的區域50的個數以及單位框架55的個數沒有特別限定。相鄰的單位框架55借助繫條56彼此連接。FIG. 2 is a top view of a portion of lead frame 100 . The area 50 has nine (three by three) unit frames 55 . Each unit frame 55 has a penetration portion penetrating in the direction in which the pair of main surfaces 10 face each other, that is, in the thickness direction of the lead frame 100 . The through portion is formed by etching. In addition, the number of the regions 50 in the main surface 10 and the number of the unit frames 55 are not particularly limited. Adjacent unit frames 55 are connected to each other by means of tie bars 56 .

單位框架55包括：配置在中央部的焊盤（pad）51；配置在焊盤51周圍的也被稱為內引線的多個端子52；以及支撐焊盤51的支撐條54。支撐條54的前端與焊盤51連接。支撐條54的後端與配置在端子52周圍的繫條56連接。支撐條54透過從大致矩形的焊盤51的四角放射狀延伸並連接於繫條56，從而支撐焊盤51。單位框架55中的除了焊盤51、端子52、支撐條54和繫條56以外的部分是透過蝕刻形成的貫穿部。The unit frame 55 includes: a pad 51 arranged in a central portion; a plurality of terminals 52 also called inner leads arranged around the pad 51 ; and a support bar 54 supporting the pad 51 . The front ends of the support bars 54 are connected to the pads 51 . The rear end of the support bar 54 is connected to a tie bar 56 arranged around the terminal 52 . The support bars 54 support the pads 51 by extending radially from the four corners of the substantially rectangular pads 51 and connected to the tie bars 56 . Portions other than the pads 51 , the terminals 52 , the support bars 54 , and the tie bars 56 in the unit frame 55 are penetration portions formed by etching.

圖3是被沿著厚度方向切斷的引線框架100的切斷面的光學顯微鏡照片。本發明的技術中的“厚度方向”是指與引線框架100的主面10正交的方向。圖3表示引線框架100的切斷面中的引線框架100的側部附近的切斷面。如圖3的照片所示，引線框架100的側面12具有沿著引線框架100的厚度方向彼此相鄰的剪切面22和斷裂面24。可以透過使用模具將引線框架基材切斷來形成彼此相鄰的剪切面22和斷裂面24。由此，能夠充分減少由於蝕刻而在引線框架100的側部產生的突起。因此，在加工引線框架100時以及使用引線框架100製造引線框架封裝件時，可以抑制突起折斷而產生微細金屬片。FIG. 3 is an optical microscope photograph of a cut surface of the lead frame 100 cut along the thickness direction. The “thickness direction” in the technology of the present invention refers to a direction orthogonal to the main surface 10 of the lead frame 100 . FIG. 3 shows a cut surface in the vicinity of the side portion of the lead frame 100 among the cut surfaces of the lead frame 100 . As shown in the photograph of FIG. 3 , the side surface 12 of the lead frame 100 has a shear plane 22 and a fracture plane 24 adjacent to each other in the thickness direction of the lead frame 100 . The shear plane 22 and the fracture plane 24 adjacent to each other can be formed by cutting the lead frame base material using a die. As a result, protrusions generated on the side portions of the lead frame 100 due to etching can be sufficiently reduced. Therefore, when the lead frame 100 is processed and the lead frame package is manufactured using the lead frame 100 , it is possible to suppress the breakage of the protrusions and the generation of fine metal pieces.

引線框架100的側面14也與側面12同樣，可以具有沿著厚度方向彼此相鄰的剪切面22和斷裂面24。即，引線框架的四方的側面全部可以具有沿著厚度方向彼此相鄰的剪切面22和斷裂面24。由此，能夠進一步減少由於利用蝕刻而在引線框架100的側部產生的突起。Like the side surface 12 , the side surface 14 of the lead frame 100 may also have a shear surface 22 and a fracture surface 24 that are adjacent to each other in the thickness direction. That is, all of the four side surfaces of the lead frame may have the shear plane 22 and the fracture plane 24 adjacent to each other in the thickness direction. As a result, protrusions generated on the side portions of the lead frame 100 due to etching can be further reduced.

在引線框架100的沿著長邊方向延伸的一對側面12中，剪切面22和斷裂面24可以在雙方的側面12中沿著厚度方向以相同順序排列。由此，在使用輸送輥等搬送引線框架100時，可以順暢地搬送引線框架100。從同樣的觀點考慮，四方的側面中的剪切面22和斷裂面24也可以在四方的側面中沿著厚度方向以相同順序排列。在這種情況下，由於各個主面10的四角中的形狀容易一致，因此還可以提高形狀的均勻性。In the pair of side surfaces 12 extending in the longitudinal direction of the lead frame 100 , the shear surface 22 and the fracture surface 24 may be arranged in the same order in the thickness direction on both side surfaces 12 . Thereby, when the lead frame 100 is conveyed using conveyance rollers or the like, the lead frame 100 can be conveyed smoothly. From the same viewpoint, the shear planes 22 and the fracture planes 24 in the square side surfaces may be arranged in the same order in the thickness direction in the square side surfaces. In this case, since the shapes at the four corners of the respective main surfaces 10 are easily matched, the uniformity of the shapes can also be improved.

圖4表示了收容架的一例。在使用引線框架100製作引線框架封裝件時，引線框架100或其加工品被收容於所述收容架。收容架30在晶片鍵合和引線鍵合等各製程的前後收容多個引線框架100。在收容架30的內側壁設有用於支撐引線框架100的突起狀的支撐部32。由此，收容架30可以將多個引線框架100收容成彼此不接觸地沿著上下方向排列。FIG. 4 shows an example of a storage rack. When the lead frame 100 is used to manufacture the lead frame package, the lead frame 100 or its processed product is accommodated in the accommodating frame. The accommodating rack 30 accommodates a plurality of lead frames 100 before and after each process such as die bonding and wire bonding. A protruding support portion 32 for supporting the lead frame 100 is provided on the inner side wall of the accommodating frame 30 . Thereby, the housing rack 30 can accommodate the plurality of lead frames 100 so as to be arranged in the vertical direction without contacting each other.

在製造引線框架封裝件的各製程中，引線框架100被收容於收容架30。在從收容架30沿著A1方向取出引線框架100時，或沿著與A1方向相反的方向將引線框架100收容於收容架30時，引線框架100的側面12與收容架30的內側壁彼此摩擦地接觸。因此，如果在引線框架100的側面12存在突起或毛刺，則由於側面12與內側壁的接觸，會產生微細金屬片。如果如此產生的金屬片落到下方的引線框架100上，則成為在封裝化的引線框架中發生短路的重要原因。本實施方式的引線框架100可以充分抑制這種金屬片的產生。The lead frame 100 is accommodated in the receiving frame 30 during each process of manufacturing the lead frame package. When the lead frame 100 is taken out from the accommodating frame 30 along the A1 direction, or when the lead frame 100 is accommodated in the accommodating frame 30 in the direction opposite to the A1 direction, the side surface 12 of the lead frame 100 and the inner side wall of the accommodating frame 30 rub against each other ground contact. Therefore, if there are protrusions or burrs on the side surfaces 12 of the lead frame 100, fine metal flakes are generated due to the contact between the side surfaces 12 and the inner side walls. If the metal piece thus generated falls on the lead frame 100 below, it becomes an important cause of short circuit in the packaged lead frame. The lead frame 100 of the present embodiment can sufficiently suppress the generation of such metal pieces.

引線框架100中的四方的側面可以整體由剪切面22和斷裂面24構成，也可以局部包含與剪切面和斷裂面不同的面。作為這種面，例如可以列舉用於構成透過蝕刻形成的狹縫（凹部）的面。這種狹縫可以形成為從一方的主面到達另一方的主面。例如，在進行切料加工之前形成有狹縫的情況下，可以減少切斷的部分。因此，不僅小型的衝床也能實施切斷，而且可以延長衝頭的壽命。構成狹縫的側面透過蝕刻形成。這種側面通常不與收容架30和組裝裝置等接觸。因此，所述側面可以不具備剪切面22和斷裂面24雙方。The quadrilateral side surfaces of the lead frame 100 may be constituted by the sheared surface 22 and the fractured surface 24 as a whole, or may partially include a surface different from the sheared surface and the fractured surface. As such a surface, for example, a surface for forming a slit (recess) formed by etching can be mentioned. Such slits may be formed so as to extend from one main surface to the other main surface. For example, when the slit is formed before the cutting process, the portion to be cut can be reduced. Therefore, not only a small punch can be cut, but also the life of the punch can be extended. The side surfaces constituting the slits are formed by etching. Such side surfaces are generally not in contact with the housing rack 30, the assembling device, or the like. Therefore, the side surface need not have both the shearing surface 22 and the fracture surface 24 .

圖1和圖2所示的導孔20與側面12、14同樣，可以具有沿著厚度方向彼此相鄰的剪切面22和斷裂面24。可以透過採用模具的切料加工形成這種導孔20。透過如此形成導孔20，相比於透過蝕刻形成導孔20的情況，能夠抑制在導孔20的內壁面形成突起。因此，在為了定位而將銷插入導孔20時，能夠抑制內壁面被刮掉而產生微細金屬片。Like the side surfaces 12 and 14 , the guide hole 20 shown in FIGS. 1 and 2 may have a shear surface 22 and a fracture surface 24 that are adjacent to each other in the thickness direction. Such a guide hole 20 can be formed by cutting through a die. By forming the guide holes 20 in this way, it is possible to suppress the formation of protrusions on the inner wall surfaces of the guide holes 20 compared to the case where the guide holes 20 are formed by etching. Therefore, when the pin is inserted into the guide hole 20 for positioning, the inner wall surface can be prevented from being scraped off and the generation of fine metal pieces can be suppressed.

沿著引線框架100的厚度方向的剪切面22的長度與沿著引線框架100的厚度方向的斷裂面24的長度之比可以是1以上，也可以是2以上，還可以是3以上。由此，可以充分提高引線框架100的側面12、14中的尺寸精度。另一方面，從充分抑制模具切料的故障產生的觀點考慮，優選剪切面22的長度與斷裂面24的長度之比在4以下。例如可以透過改變用模具實施切斷時的衝模與衝頭之間的間隙，來調整剪切面22的長度與斷裂面24的長度之比。The ratio of the length of the shear surface 22 along the thickness direction of the lead frame 100 to the length of the fracture surface 24 along the thickness direction of the lead frame 100 may be 1 or more, 2 or more, or 3 or more. Thereby, the dimensional accuracy in the side surfaces 12 and 14 of the lead frame 100 can be sufficiently improved. On the other hand, the ratio of the length of the sheared surface 22 to the length of the fractured surface 24 is preferably 4 or less from the viewpoint of sufficiently suppressing the occurrence of failure of the die cut. For example, the ratio of the length of the sheared surface 22 to the length of the fractured surface 24 can be adjusted by changing the gap between the die and the punch when cutting with a die.

引線框架100的位於剪切面22側的主面10的端部10A（圖3）可以彎曲成朝向另一方的主面10側。由此，在將引線框架100收容於後述收容架30時，可以抑制端部10A與收容架的內部接觸。由此，可以進一步抑制微細金屬片的產生。在製作引線框架封裝件時，半導體元件可以設置在斷裂面24側的主面10。由此，在製造引線框架封裝件的一系列製程中，端部10A成為下方側。因此，可以在由輸送輥等構成的搬送通道上順暢地搬送引線框架100。The end portion 10A ( FIG. 3 ) of the main surface 10 of the lead frame 100 on the side of the shear plane 22 may be bent toward the other main surface 10 side. Thereby, when the lead frame 100 is accommodated in the accommodating rack 30 to be described later, it is possible to suppress the end portion 10A from coming into contact with the inside of the accommodating rack. Thereby, the generation of fine metal flakes can be further suppressed. When producing the lead frame package, the semiconductor element can be arranged on the main surface 10 on the side of the fracture surface 24 . Thus, in a series of processes for manufacturing the lead frame package, the end portion 10A becomes the lower side. Therefore, the lead frame 100 can be smoothly conveyed on the conveyance path formed of conveyance rollers and the like.

引線框架100的位於斷裂面24側的主面10的周緣10B相比於剪切面22與斷裂面24的邊界部26更為凹陷。由此，在將引線框架100收容於後述收容架30時，可以抑制周緣10B與收容架的內部接觸。由此，可以進一步抑制微細金屬片的產生。The peripheral edge 10B of the main surface 10 on the fractured surface 24 side of the lead frame 100 is more recessed than the boundary portion 26 between the sheared surface 22 and the fractured surface 24 . Thereby, when the lead frame 100 is accommodated in the accommodating rack 30 to be described later, it is possible to prevent the peripheral edge 10B from coming into contact with the inside of the accommodating rack. Thereby, the generation of fine metal flakes can be further suppressed.

引線框架100可以在主面10具有鍍膜。鍍膜的厚度例如可以為0.2～3μm。鍍膜例如構成為包含一個或多個金屬層。所述金屬層例如構成為包含從鎳、銅、鈀、銀和金組成的群中選擇的至少一種金屬或所述金屬的合金。作為鍍膜，具體可以列舉僅含銅鍍層作為金屬層的電解鍍膜以及具有包含鎳層、鈀層和金層的層疊結構的電解鍍膜。The lead frame 100 may have a plating film on the main surface 10 . The thickness of the plating film may be, for example, 0.2 to 3 μm. The coating is, for example, formed to include one or more metal layers. The metal layer is formed, for example, to contain at least one metal selected from the group consisting of nickel, copper, palladium, silver, and gold, or an alloy of the metals. Specific examples of the plating film include an electrolytic plating film containing only a copper plating layer as a metal layer, and an electrolytic plating film having a laminated structure including a nickel layer, a palladium layer, and a gold layer.

以下說明引線框架的製造方法的一個實施方式。本實施方式的引線框架的製造方法包括：蝕刻製程，透過對帶狀的引線框架基材進行蝕刻，從而在引線框架基材上形成沿著厚度方向貫穿的貫穿部；以及切斷製程，用模具將透過蝕刻而露出的引線框架基材的側部切斷。One embodiment of a method of manufacturing a lead frame will be described below. The manufacturing method of the lead frame of the present embodiment includes: an etching process in which a lead frame base material is etched to form a through portion penetrating in the thickness direction on the lead frame base material; and a cutting process, using a mold The side portion of the lead frame base material exposed by the etching is cut.

在蝕刻製程中，透過蝕刻形成貫穿部，並透過蝕刻而除去所述引線框架基材的側部的至少一部分。即，在蝕刻製程中，透過把塗布有抗蝕劑的銅制的引線框架基材浸泡在蝕刻液中，從而在引線框架基材的預定的位置形成貫穿部。貫穿部是預定形狀的貫穿孔。透過形成這種貫穿部，從而形成預定形狀的焊盤、端子、支撐條和繫條等。此時，引線框架基材的側面通常未被抗蝕膜覆蓋。因此，引線框架基材的側部也被蝕刻。在蝕刻製程中，可以一併蝕刻形成後續製程中用於進行引線框架基材與模具的位置對準的導孔。In the etching process, the through portion is formed by etching, and at least a portion of the side portion of the lead frame substrate is removed by etching. That is, in the etching process, the lead frame base material made of copper coated with the resist is immersed in the etching solution, thereby forming the penetration portion at the predetermined position of the lead frame base material. The through portion is a through hole of a predetermined shape. By forming such penetrating portions, predetermined shapes of pads, terminals, support bars, tie bars, and the like are formed. At this time, the side surfaces of the lead frame base material are usually not covered with the resist film. Therefore, the sides of the lead frame substrate are also etched. In the etching process, a guide hole for aligning the lead frame substrate and the mold in the subsequent process can be formed by etching together.

圖5是表示透過將蝕刻製程後的引線框架基材110沿著其厚度方向（與主面131正交的方向）切斷而得到的切斷面的一部分（引線框架基材110的側部附近）的掃描型電子顯微鏡照片。在蝕刻製程中，引線框架基材110的側面112的中央部被蝕刻而凹陷。由此，在上端部112A和下端部112B形成有突起。5 shows a part of the cut surface (near the side of the lead frame base 110 ) obtained by cutting the lead frame base 110 after the etching process in the thickness direction (direction perpendicular to the main surface 131 ). ) of the scanning electron microscope images. During the etching process, the central portion of the side surface 112 of the lead frame substrate 110 is etched and recessed. Thereby, protrusions are formed on the upper end portion 112A and the lower end portion 112B.

圖6是用於說明將蝕刻製程中得到的引線框架基材110的側部切斷的切斷製程的圖。在切斷製程中，用模具將透過蝕刻而露出的引線框架基材110的側部沿著厚度方向切斷。如圖6所示，引線框架基材110（111）以預定的進給寬度沿著行進方向A2移動。在切斷區域40配置有模具（未圖示）。在切斷區域40中，引線框架基材111被模具沿著切斷線23切斷。由此，除去了引線框架基材110的側面112中的突起狀的毛刺（圖5），得到了具備圖3所示的側面12的引線框架基材111，該側面12具有剪切面22和斷裂面24。如此，透過用模具將引線框架基材110的側部切斷而得到的切斷面，具備沿著厚度方向彼此相鄰的剪切面22和斷裂面24。用於切斷引線框架基材110的側部的模具可以採用通常的衝頭和衝模。FIG. 6 is a diagram for explaining a cutting process for cutting the side portion of the lead frame base material 110 obtained in the etching process. In the cutting process, the side portion of the lead frame base material 110 exposed through the etching is cut along the thickness direction with a mold. As shown in FIG. 6 , the lead frame base material 110 ( 111 ) moves along the traveling direction A2 with a predetermined feed width. A mold (not shown) is arranged in the cutting region 40 . In the cutting region 40 , the lead frame base material 111 is cut along the cutting line 23 by the mold. As a result, protruding burrs on the side surface 112 of the lead frame base material 110 are removed ( FIG. 5 ), and the lead frame base material 111 having the side surface 12 shown in FIG. 3 is obtained, the side surface 12 having the cut surface 22 and fracture surface 24. In this way, the cut surface obtained by cutting the side portion of the lead frame base material 110 with a mold includes the sheared surface 22 and the fractured surface 24 which are adjacent to each other along the thickness direction. The die for cutting the side portion of the lead frame base material 110 may employ a general punch and die.

將引線框架基材110的側部25切斷並除去時，可以透過將銷插入圖6所示的導孔20，從而進行引線框架基材110（111）與模具的定位。即，可以利用引線框架基材110的側部25中的導孔20對引線框架基材110進行定位，來切斷側部25。本實施方式中，導孔20設置於引線框架基材110的雙方的側部25。對此，導孔20的位置和個數沒有特別限定。導孔也可以設置於引線框架基材110的側部25。When the side portion 25 of the lead frame base material 110 is cut and removed, the lead frame base material 110 ( 111 ) can be positioned with the mold by inserting a pin into the guide hole 20 shown in FIG. 6 . That is, the side portion 25 can be cut by positioning the lead frame base material 110 using the guide holes 20 in the side portion 25 of the lead frame base material 110 . In this embodiment, the via holes 20 are provided on both side portions 25 of the lead frame base material 110 . In this regard, the position and number of the guide holes 20 are not particularly limited. The via hole may also be provided in the side portion 25 of the lead frame base material 110 .

如此，透過在從引線框架基材110的成為引線框架的部分切離的側部25設置導孔，從而可以在抑制引線框架100的產品形狀受到制約的情況下設置導孔。因此，導孔的個數和尺寸可以自由設定。因此，在將引線框架基材110切斷時，能夠在側部25的適當位置設置適當個數的導孔，該導孔用於進行引線框架基材110與模具的定位。因此，能夠以較高的位置精度切斷側部25。In this way, by providing the guide hole in the side portion 25 cut away from the lead frame portion of the lead frame base material 110 , the guide hole can be provided while restraining the product shape of the lead frame 100 from being restricted. Therefore, the number and size of the guide holes can be freely set. Therefore, when the lead frame base material 110 is cut, an appropriate number of guide holes for positioning the lead frame base material 110 and the mold can be provided at appropriate positions on the side portion 25 . Therefore, the side portion 25 can be cut with high positional accuracy.

在將導孔設置於側部25的情況下，能使用相同模具製造多種引線框架100。其結果，在製造種類不同的多個引線框架的情況下，能共用切斷製程中的模具。因此，能夠減少模具的個數。因此，能夠降低引線框架的製造成本和設備成本。In the case where the guide holes are provided in the side portions 25, a plurality of types of lead frames 100 can be manufactured using the same mold. As a result, when manufacturing a plurality of lead frames of different types, the mold in the cutting process can be shared. Therefore, the number of molds can be reduced. Therefore, the manufacturing cost and equipment cost of the lead frame can be reduced.

在另一實施方式中，可以透過模具的切料加工形成導孔20。這種導孔20與透過蝕刻形成的導孔相比，能夠減少內壁面上產生的突起。由此，能夠抑制為了定位而將銷插入導孔20時產生微小的金屬片。在此，例如可以利用蝕刻在引線框架基材110的側部25形成導孔並用所述導孔進行定位，使用模具來設置導孔20。由此，能以較高的位置精度設置導孔20。可以在切斷製程之前進行使用模具設置導孔20的製程，也可以在切斷製程時進行使用模具設置導孔20的製程。In another embodiment, the guide hole 20 may be formed by cutting through a mold. Such a guide hole 20 can reduce protrusions generated on the inner wall surface as compared with a guide hole formed by etching. Thereby, it is possible to suppress the generation of minute metal pieces when the pins are inserted into the guide holes 20 for positioning. Here, for example, a guide hole may be formed in the side portion 25 of the lead frame base material 110 by etching, and the guide hole may be used for positioning, and the guide hole 20 may be provided using a mold. Thereby, the guide hole 20 can be provided with high positional accuracy. The process of setting the guide holes 20 using a mold may be performed before the cutting process, or the process of setting the guide holes 20 using a mold may be performed during the cutting process.

圖7是用於說明引線框架的製造方法的變形例的圖。所述變形例中，在切斷區域41設有俯視呈L形的衝頭60。L型的衝頭60具有突出部61，突出部61朝向與引線框架基材110的側面12相對的方向突出。在衝頭60的下方設有具備缺口部的衝模（未圖示），所述缺口部呈與突出部61互補的形狀。進入切斷區域41的引線框架基材110的側部25被具有上述形狀的衝頭60和衝模的模具切斷。此時，在被模具切斷的引線框架的切斷面（側面12）上，利用突出部61，與剪切面和斷裂面一起形成凹陷部90，所述凹陷部90從引線框架基材111A的一方的主面10到達另一方的主面10。可以在凹陷部90也形成剪切面和斷裂面。FIG. 7 is a diagram for explaining a modification of the method of manufacturing the lead frame. In the modified example, the cutting region 41 is provided with a punch 60 having an L-shape in plan view. The L-shaped punch 60 has a protruding portion 61 that protrudes in a direction opposite to the side surface 12 of the lead frame base 110 . Below the punch 60 is provided a die (not shown) having a notch portion having a shape complementary to the protruding portion 61 . The side portion 25 of the lead frame base material 110 entering the cutting region 41 is cut by the die having the punch 60 and the die having the above-mentioned shape. At this time, on the cut surface (side surface 12 ) of the lead frame cut by the die, the protrusion 61 forms the recessed portion 90 together with the sheared surface and the fractured surface, and the recessed portion 90 extends from the lead frame base material 111A. The one main surface 10 reaches the other main surface 10 . A shear plane and a fracture plane may also be formed in the recessed portion 90 .

引線框架基材110比衝頭60長。因此，在使引線框架基材110沿著行進方向A2移動的同時，多次透過模具重複進行切斷。即，採用衝頭60和衝模切斷側部25後，使引線框架基材110（111A）沿著行進方向A2移動。此時的移動距離設定為比衝頭60沿著行進方向A2的長度略短的距離。圖7中虛線表示的衝頭軌跡60A表示引線框架基材110（111A）移動之前的衝頭60與引線框架基材111A的位置關係。The lead frame substrate 110 is longer than the punch 60 . Therefore, while the lead frame base material 110 is moved in the advancing direction A2, the cutting is performed repeatedly through the mold a plurality of times. That is, after the side portion 25 is cut by the punch 60 and the die, the lead frame base material 110 ( 111A) is moved along the advancing direction A2 . The moving distance at this time is set to a distance slightly shorter than the length of the punch 60 along the advancing direction A2. The punch trajectory 60A indicated by the broken line in FIG. 7 shows the positional relationship between the punch 60 and the lead frame base material 111A before the lead frame base material 110 ( 111A) is moved.

透過設定這樣的錯位，從而在引線框架基材110（111A）移動之後切斷側部25時，衝頭60的頂端部62位於移動前透過切斷側部25而形成的凹陷部90的上方（或旁邊）。因此，即使分為多次透過模具進行側部25的切斷，也可以抑制產生被重複切斷的部分。由此，可以抑制二次切削導致的毛刺或切削屑的產生以及伴隨切斷失誤的變形等。另外，凹陷部90的大小和間隔沒有特別限定。By setting such a misalignment, when the side portion 25 is cut after the lead frame base material 110 ( 111A) has moved, the distal end portion 62 of the punch 60 is positioned above the recessed portion 90 formed by cutting the side portion 25 before the movement ( or next to it). Therefore, even if the cutting of the side portion 25 is carried out by passing through the die a plurality of times, it is possible to suppress the occurrence of repeated cutting portions. As a result, the generation of burrs and chips caused by secondary cutting, deformation due to cutting errors, and the like can be suppressed. In addition, the size and interval of the recessed portion 90 are not particularly limited.

在形成有凹陷部90的一對側面12中，可以在雙方的側面12中沿著厚度方向以相同順序排列剪切面22和斷裂面24。由此，在用輸送輥等搬送引線框架基材111A以及將引線框架基材111A切斷而得到的引線框架100時，可以抑制凹陷部90鉤掛於輸送輥以及變形。In the pair of side surfaces 12 on which the recessed portion 90 is formed, the sheared surface 22 and the fractured surface 24 may be arranged in the same order along the thickness direction on both side surfaces 12 . Thereby, when the lead frame base material 111A and the lead frame 100 obtained by cutting the lead frame base material 111A are conveyed by the conveyance roller or the like, it is possible to prevent the recessed portion 90 from being caught on the conveyance roller and deformed.

透過用模具把切斷製程中切斷側部25而得到的引線框架基材111（111A）沿著短邊方向切斷，從而得到圖1所示的引線框架100。從引線框架基材111A得到的引線框架100在一對側面具有從一方的主面到達另一方的主面的凹陷部90。在用模具沿著短邊方向切斷的切斷面（側面14）上，也形成有剪切面和斷裂面。所述切斷面（側面14）也可以具有凹陷部90。如此，可以得到在四方的側面具有剪切面和斷裂面，能充分抑制在製造引線框架封裝件時的微細金屬片的產生的引線框架。The lead frame 100 shown in FIG. 1 is obtained by cutting the lead frame base material 111 ( 111A) obtained by cutting the side portion 25 in the cutting process along the short-side direction with a die. The lead frame 100 obtained from the lead frame base material 111A has, on a pair of side surfaces, a recessed portion 90 extending from one main surface to the other main surface. A sheared surface and a fractured surface are also formed on the cut surface (side surface 14 ) cut in the short-side direction with a die. The cut surface (side surface 14 ) may also have a recessed portion 90 . In this way, a lead frame can be obtained which has shear planes and fracture planes on the side surfaces of the squares, and can sufficiently suppress the generation of fine metal pieces during the production of the lead frame package.

另外，引線框架的製造方法不限於上述的實施方式。例如，可以透過在將引線框架基材110沿著短邊方向切斷之後，將引線框架基材110的沿著長邊方向的側部切斷，從而得到引線框架100。此外，也可以在蝕刻製程和切斷製程之間進行在引線框架基材110的表面形成鍍膜的鍍層製程。In addition, the manufacturing method of a lead frame is not limited to the above-mentioned embodiment. For example, the lead frame 100 can be obtained by cutting the side portion of the lead frame base material 110 along the longitudinal direction after cutting the lead frame base material 110 in the short-side direction. In addition, a plating process of forming a plating film on the surface of the lead frame substrate 110 may also be performed between the etching process and the cutting process.

一個實施方式的引線框架封裝件的製造方法包括：在引線框架設置半導體元件的製程；透過對半導體元件進行樹脂密封而製作樹脂密封體的製程；以及將樹脂密封體單片化的製程。以下作為一例，說明製造圖8的引線框架封裝件300的情況。A method of manufacturing a lead frame package according to an embodiment includes: a process of arranging a semiconductor element on a lead frame; a process of producing a resin sealing body by resin-sealing the semiconductor element; and a process of singulating the resin sealing body. Hereinafter, a case of manufacturing the lead frame package 300 of FIG. 8 will be described as an example.

在設置半導體元件92的製程中，例如使用銀漿料等金屬漿料將半導體元件92黏結於引線框架100的各單位框架55的焊盤51（芯片鍵合）。接著，用鍵合線94將半導體元件92的電極焊盤（未圖示）與端子52之間連接（引線鍵合）。接下來，將包含單位框架55的引線框架100配置到模塑模具內。而後，將樹脂組合物（例如，環氧樹脂等熱固性樹脂組合物）注入模塑模具內並加熱，使樹脂組合物固化。透過將如此得到的樹脂密封體單片化，從而得到具備密封樹脂70的引線框架封裝件300。密封樹脂70將單位框架55（引線框架）上搭載的半導體元件92以及連接半導體元件92與端子52的鍵合線94密封。In the process of disposing the semiconductor element 92 , the semiconductor element 92 is bonded to the pads 51 of each unit frame 55 of the lead frame 100 using metal paste such as silver paste (die bonding). Next, the electrode pads (not shown) of the semiconductor element 92 and the terminals 52 are connected by bonding wires 94 (wire bonding). Next, the lead frame 100 including the unit frame 55 is placed in a molding die. Then, a resin composition (for example, a thermosetting resin composition such as an epoxy resin) is injected into a mold and heated to cure the resin composition. The lead frame package 300 provided with the sealing resin 70 is obtained by dividing the resin sealing body obtained in this way into pieces. The sealing resin 70 seals the semiconductor element 92 mounted on the unit frame 55 (lead frame) and the bonding wire 94 connecting the semiconductor element 92 and the terminal 52 .

在引線框架封裝件300的製造方法中，在芯片鍵合的前後和/或引線鍵合的前後等，將引線框架100收容於圖4所示收容架30。在本實施方式的製造方法中，能夠減少將引線框架100收容於收容架30時以及把引線框架100從收容架30取出時產生的微細金屬片。由此，被樹脂密封的金屬片減少。因此，可以充分抑制引線框架100產品化後發生短路等故障。In the manufacturing method of the lead frame package 300 , the lead frame 100 is accommodated in the accommodating frame 30 shown in FIG. 4 before and after die bonding and/or before and after wire bonding. In the manufacturing method of the present embodiment, it is possible to reduce the generation of fine metal pieces when the lead frame 100 is accommodated in the accommodating rack 30 and when the lead frame 100 is taken out from the accommodating rack 30 . Thereby, the number of metal pieces sealed with resin is reduced. Therefore, the occurrence of failures such as short circuits after the lead frame 100 is commercialized can be sufficiently suppressed.

以上，說明了一些實施方式。但是，本發明的技術完全不限於上述方式。例如，引線框架（引線框架基材）不限於QFN型，也可以是DFN型或QFP型。即，引線框架（引線框架基材）只要是經過蝕刻得到的引線框架（引線框架基材）即可。此外，形成於引線框架（引線框架基材）的單位框架的形狀和個數沒有特別限定。Above, some embodiments have been described. However, the technology of the present invention is not limited to the above-mentioned form at all. For example, the lead frame (lead frame base material) is not limited to the QFN type, and may be a DFN type or a QFP type. That is, the lead frame (lead frame base material) may be a lead frame (lead frame base material) obtained by etching. In addition, the shape and number of the unit frames formed in the lead frame (lead frame base material) are not particularly limited.

（實施例）(Example)

參照實施例和比較例，進一步具體說明本發明的技術內容。另外，本發明的技術不限於以下的實施例。The technical content of the present invention will be further specifically described with reference to Examples and Comparative Examples. In addition, the technology of the present invention is not limited to the following examples.

（實施例1）(Example 1)

準備了透過蝕刻而形成有單位框架的QFN型的引線框架基材（銅制）。在所述引線框架基材的表面形成了鍍膜。隨後，用具備圖7所示的衝頭60的模具將引線框架基材的側部沿著厚度方向切斷。隨後，在引線框架基材的主面，以覆蓋區域50的方式黏貼防止樹脂洩漏膠帶。而後，利用通常的模具將引線框架基材沿著寬度方向切斷。如此，製作了10個圖1所示的引線框架（長度：250mm，寬度：70mm，厚度0.2mm）。所述引線框架在主面具有包含透過蝕刻形成的單位框架55（參照圖2）的區域50。而且，四個側面分別具備沿著厚度方向相鄰的剪切面和斷裂面。此外，在一方的主面上，以覆蓋區域50的方式黏貼防止樹脂洩漏膠帶。A QFN-type lead frame base material (made of copper) in which a unit frame was formed by etching was prepared. A plating film is formed on the surface of the lead frame base material. Subsequently, the side portion of the lead frame base material is cut in the thickness direction with a die provided with the punch 60 shown in FIG. 7 . Then, on the main surface of the lead frame base material, a resin leakage preventing tape is pasted so as to cover the area 50 . Then, the lead frame base material is cut in the width direction using a normal mold. In this way, ten lead frames (length: 250 mm, width: 70 mm, thickness 0.2 mm) shown in FIG. 1 were produced. The lead frame has a region 50 including a unit frame 55 (see FIG. 2 ) formed by etching on the main surface. Moreover, each of the four side surfaces has a shear surface and a fracture surface that are adjacent to each other in the thickness direction. In addition, on one main surface, the resin leakage prevention tape is stuck so that the area|region 50 may be covered.

將引線框架收容於圖4所示的收容架。隨後，針對引線框架重複進行兩次芯片鍵合和引線鍵合的作業。在各作業的開始前和結束後，將引線框架收容於收容架。即，利用以下的一系列製程處理引線框架。The lead frame is accommodated in the accommodating rack shown in FIG. 4 . Subsequently, the work of die bonding and wire bonding is repeated twice for the lead frame. The lead frame is housed in the storage rack before and after the start of each operation. That is, the lead frame is processed by the following series of processes.

收容架→芯片鍵合（第一次）→收容架→引線鍵合（第一次）→收容架→芯片鍵合（第二次）→收容架→引線鍵合（第二次）→收容架。Storage Rack → Chip Bonding (First Time) → Storage Rack → Wire Bonding (First Time) → Storage Rack → Chip Bonding (Second Time) → Storage Rack → Wire Bonding (Second Time) → Storage Rack .

在各製程的結束時點，目視確認各引線框架的四角以及長邊方向的中心部有無金屬片。針對每個製程計數了產生的金屬片的個數。其結果如表1所示。At the end of each process, the presence or absence of metal pieces at the four corners and the center in the longitudinal direction of each lead frame was visually checked. The number of metal flakes produced was counted for each process. The results are shown in Table 1.

（比較例1）(Comparative Example 1)

以不使用模具切斷引線框架基材的側部的方式製作了引線框架。另外，透過使用比實施例1寬度更小的引線框架基材，從而將引線框架的尺寸設為與實施例1相同（長度：250mm，寬度：70mm，厚度：0.2mm）。使用所述引線框架進行與實施例1相同的一系列製程，針對每個製程計數了產生的金屬片的個數。其結果如表1所示。表1的數值表示金屬片的個數。The lead frame was produced without using a mold to cut the side portion of the lead frame base material. In addition, by using a lead frame base material with a smaller width than that of Example 1, the dimensions of the lead frame were made the same as those of Example 1 (length: 250 mm, width: 70 mm, thickness: 0.2 mm). The same series of processes as in Example 1 were performed using the lead frame, and the number of metal sheets produced was counted for each process. The results are shown in Table 1. The numerical values in Table 1 represent the number of metal pieces.

（表1） 目視確認的時機 實施例1 比較例1 芯片鍵合（第一次）結束後 0 4 引線鍵合（第一次）結束後 0 8 芯片鍵合（第二次）結束後 0 6 引線鍵合（第二次）結束後 0 12 (Table 1) Timing for visual confirmation Example 1 Comparative Example 1 After die bonding (first time) 0 4 After wire bonding (first time) 0 8 After die bonding (second time) 0 6 After wire bonding (second time) 0 12

如表1所示，在用模具切斷側部的實施例1的引線框架中，能夠充分減少金屬片的產生。另一方面，在比較例1中，確認了各製程中產生了金屬片。As shown in Table 1, in the lead frame of Example 1 in which the side portions were cut with a die, generation of metal pieces was sufficiently reduced. On the other hand, in Comparative Example 1, it was confirmed that metal flakes were generated in each process.

按照本發明的技術，提供一種可抑制微細金屬片的產生的引線框架及其製造方法。此外，提供一種透過使用可抑制微細金屬片的產生的引線框架，從而能製造可靠性優異的引線框架封裝件的製造方法。According to the technology of the present invention, a lead frame capable of suppressing the generation of fine metal flakes and a method for manufacturing the same are provided. Moreover, by using the lead frame which can suppress the generation|occurence|production of a fine metal piece, the manufacturing method of the lead frame package excellent in reliability is provided.

出於示例和說明的目的已經給出了所述詳細的說明。根據上面的教導，許多變形和改變都是可能的。所述的詳細說明並非沒有遺漏或者旨在限制在這裡說明的主題。儘管已經透過文字以特有的結構特徵和/或方法過程對所述主題進行了說明，但應當理解的是，權利要求書中所限定的主題不是必須限於所述的具體特徵或者具體過程。更確切地說，將所述的具體特徵和具體過程作為實施權利要求書的示例進行了說明。The detailed description has been presented for the purposes of example and description. Many variations and changes are possible in light of the above teachings. The detailed description is not exhaustive or intended to limit the subject matter described herein. Although the subject matter has been described in terms of specific structural features and/or methodological processes, it is to be understood that the subject matter defined in the claims is not necessarily limited to the specific features or specific processes described. Rather, the specific features and specific procedures described are described as examples of implementing the claims.

雖然本發明以前述之諸項實施例揭露如上，然其並非用以限定本發明，任何熟習相像技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。Although the present invention is disclosed above by the aforementioned embodiments, it is not intended to limit the present invention. Anyone who is familiar with similar techniques can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of patent protection of the invention shall be determined by the scope of the patent application attached to this specification.

10:主面 100:引線框架 10A:端部 10B:周緣 110、111、111A:引線框架基材 112、12、14:側面 112A:上端部 112B:下端部 20:導孔 22:剪切面 23:切斷線 24:斷裂面 25:側部 26:邊界部 30:收容架 32:支撐部 40、50:區域 41:切斷區域 51:焊盤 52:端子 54:支撐條 55:單位框架 56:繫條 60:衝頭 60A:衝頭軌跡 61:突出部 62:頂端部 90:凹陷部 A1、A2:方向10: Main side 100: Lead Frame 10A: End 10B: Perimeter 110, 111, 111A: Lead frame substrate 112, 12, 14: side 112A: Upper end 112B: lower end 20: Pilot hole 22: Cut plane 23: Cut the line 24: fracture surface 25: Sides 26: Boundary Department 30: Containment Rack 32: Support part 40, 50: Area 41: Cut off area 51: Pad 52: Terminal 54: Support bar 55: Unit Frame 56: Tie 60: Punch 60A: punch track 61: Protrusion 62: Top part 90: Depressed part A1, A2: Direction

圖1是一個實施方式的引線框架的立體圖。 圖2是一個實施方式的引線框架的一部分的俯視圖。 圖3是將一個實施方式的引線框架沿著厚度方向切斷而得到的切斷面的掃描型電子顯微鏡照片。 圖4是表示收容引線框架或其加工品的收容架的一例的圖。 圖5是一個實施方式的引線框架的製造方法中的蝕刻製程之後的引線框架基材的切斷面的掃描型電子顯微鏡照片。 圖6是用於說明一個實施方式的引線框架的製造方法的圖。 圖7是用於說明引線框架的製造方法的變形例的圖。 圖8是表示引線框架封裝件的一例的斷面圖。FIG. 1 is a perspective view of a lead frame according to an embodiment. 2 is a top view of a portion of a lead frame of one embodiment. 3 is a scanning electron microscope photograph of a cut surface obtained by cutting the lead frame of one embodiment in the thickness direction. FIG. 4 is a diagram showing an example of a housing rack for housing a lead frame or a processed product thereof. 5 is a scanning electron microscope photograph of a cut surface of a lead frame base material after an etching process in a method for producing a lead frame according to an embodiment. FIG. 6 is a diagram for explaining a method of manufacturing a lead frame according to an embodiment. FIG. 7 is a diagram for explaining a modification of the method of manufacturing the lead frame. 8 is a cross-sectional view showing an example of a lead frame package.

10:主面10: Main side

100:引線框架100: Lead Frame

12、14:側面12, 14: side

20:導孔20: Pilot hole

50:區域50: Area

Claims (11)

一種引線框架，具有：透過蝕刻形成的沿著厚度方向貫穿的貫穿部，以及在長邊方向延伸的一對側面，其中，所述一對側面具備沿著所述厚度方向彼此相鄰的剪切面和斷裂面。A lead frame comprising: a penetration portion formed by etching and penetrating in a thickness direction, and a pair of side surfaces extending in a longitudinal direction, wherein the pair of side surfaces have cutouts adjacent to each other along the thickness direction surface and fracture surface. 如請求項1所述之引線框架，其中在長邊方向延伸的所述一對側面具有從一方的主面到達另一方的主面的凹陷部。The lead frame according to claim 1, wherein the pair of side surfaces extending in the longitudinal direction has a recessed portion extending from one main surface to the other main surface. 如請求項1或2所述之引線框架，其中沿著所述厚度方向的所述剪切面的長度與沿著所述厚度方向的所述斷裂面的長度之比為1以上。The lead frame according to claim 1 or 2, wherein the ratio of the length of the sheared surface along the thickness direction to the length of the fracture surface along the thickness direction is 1 or more. 如請求項1～3中任意一項所述之引線框架，其中在長邊方向延伸的所述一對側面中的所述剪切面和所述斷裂面，在雙方的側面中沿著所述厚度方向以相同順序排列。The lead frame according to any one of claims 1 to 3, wherein the shear plane and the fracture plane of the pair of side surfaces extending in the longitudinal direction are along the side surfaces of both sides. The thickness directions are arranged in the same order. 如請求項1～4中任意一項所述之引線框架，其中，所述貫穿部包含導孔，所述導孔的內壁面具有沿著厚度方向彼此相鄰的剪切面和斷裂面。The lead frame according to any one of claims 1 to 4, wherein the penetration portion includes a guide hole, and an inner wall surface of the guide hole has a shear plane and a fracture plane adjacent to each other in the thickness direction. 一種引線框架的製造方法，具有用模具將帶狀的引線框架基材的側部沿著厚度方向切斷的切斷製程，其中所述帶狀的引線框架基材具有透過蝕刻形成的沿著所述厚度方向貫穿的貫穿部。A method for manufacturing a lead frame, comprising a cutting process for cutting a side portion of a strip-shaped lead frame base material along a thickness direction with a mold, wherein the strip-shaped lead frame base material has a The penetration portion that penetrates in the thickness direction. 如請求項6所述之引線框架的製造方法，還具有：透過蝕刻形成所述貫穿部並透過蝕刻除去所述引線框架基材的側部的至少一部分的蝕刻製程，其中，在所述切斷製程中，用所述模具將透過蝕刻而露出的所述引線框架基材的所述側部切斷。The method for manufacturing a lead frame according to claim 6, further comprising: an etching process of forming the penetration portion by etching and removing at least a part of the side portion of the lead frame base material by etching, wherein, in the cutting During the manufacturing process, the side portion of the lead frame substrate exposed through etching is cut by the mold. 如請求項6或7所述之引線框架的製造方法，其中透過用所述模具將所述引線框架基材的所述側部切斷而得到的切斷面，具備沿著厚度方向彼此相鄰的剪切面和斷裂面。The method for producing a lead frame according to claim 6 or 7, wherein the cut surfaces obtained by cutting the side portion of the lead frame base material with the mold have a plurality of cut surfaces adjacent to each other along the thickness direction shear plane and fracture plane. 如請求項6～8中任意一項所述之引線框架的製造方法，其中在所述切斷製程中，透過使用具有突出部的所述模具將所述引線框架基材的所述側部切斷，從而在切斷面形成從一方的主面到達另一方的主面的凹陷部。The method for manufacturing a lead frame according to any one of claims 6 to 8, wherein in the cutting process, the side portion of the lead frame base material is cut by using the mold having a protruding portion By cutting, a recessed portion extending from one main surface to the other main surface is formed in the cut surface. 如請求項6～9中任意一項所述的引線框架的製造方法，其中，所述貫穿部包含導孔，在所述切斷製程中，由使用所述模具切斷的所述引線框架基材的所述側部中的所述導孔對所述引線框架基材進行定位，來切斷所述引線框架基材的所述側部。The method for manufacturing a lead frame according to any one of claims 6 to 9, wherein the penetration portion includes a guide hole, and in the cutting process, the lead frame base cut by the mold is The lead frame base material is positioned with the via hole in the side portion of the material to cut the side portion of the lead frame base material. 一種引線框架封裝件的製造方法，包括：在權利要求1～5中任意一項所述的引線框架，或透過權利要求6～10中任意一項所述的製造方法得到的引線框架上設置半導體元件的製程；對所述半導體元件進行樹脂密封而製作樹脂密封體的製程；以及將所述樹脂密封體單片化的製程。A manufacturing method of a lead frame package, comprising: disposing a semiconductor on the lead frame according to any one of claims 1 to 5 or the lead frame obtained by the manufacturing method according to any one of claims 6 to 10 The manufacturing process of the device; the process of resin sealing the semiconductor element to make the resin sealing body; and the process of singulating the resin sealing body.
TW110123181A 2020-06-25 2021-06-24 Lead frame, method for manufacturing same, and method for manufacturing lead frame package TWI838632B (en)

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