TW202201590A - 圖案測量方法 - Google Patents

圖案測量方法 Download PDF

Info

Publication number
TW202201590A
TW202201590A TW110117504A TW110117504A TW202201590A TW 202201590 A TW202201590 A TW 202201590A TW 110117504 A TW110117504 A TW 110117504A TW 110117504 A TW110117504 A TW 110117504A TW 202201590 A TW202201590 A TW 202201590A
Authority
TW
Taiwan
Prior art keywords
pattern
cad
edge
measurement
actual
Prior art date
Application number
TW110117504A
Other languages
English (en)
Chinese (zh)
Inventor
中澤伸一
Original Assignee
日商東實先進股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東實先進股份有限公司 filed Critical 日商東實先進股份有限公司
Publication of TW202201590A publication Critical patent/TW202201590A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • G06T7/337—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/421—Imaging digitised image, analysed in real time (recognition algorithms)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30164—Workpiece; Machine component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW110117504A 2020-05-20 2021-05-14 圖案測量方法 TW202201590A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020088016A JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法
JP2020-088016 2020-05-20

Publications (1)

Publication Number Publication Date
TW202201590A true TW202201590A (zh) 2022-01-01

Family

ID=78606786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110117504A TW202201590A (zh) 2020-05-20 2021-05-14 圖案測量方法

Country Status (6)

Country Link
US (1) US20230186459A1 (en:Method)
JP (1) JP7303155B2 (en:Method)
KR (1) KR20230012016A (en:Method)
CN (1) CN115699278A (en:Method)
TW (1) TW202201590A (en:Method)
WO (1) WO2021235227A1 (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7574157B2 (ja) * 2021-08-27 2024-10-28 株式会社ニューフレアテクノロジー 検査装置及び参照画像生成方法
JP2025144774A (ja) * 2024-03-21 2025-10-03 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 パターン測定方法およびパターン測定装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4787673B2 (ja) * 2005-05-19 2011-10-05 株式会社Ｎｇｒ パターン検査装置および方法
JP4887062B2 (ja) * 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
JP2008235575A (ja) * 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP5530601B2 (ja) * 2008-03-31 2014-06-25 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡を用いた回路パターンの寸法計測装置およびその方法
JP2011137901A (ja) * 2009-12-28 2011-07-14 Hitachi High-Technologies Corp パターン計測条件設定装置
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法
JP5438741B2 (ja) 2011-10-26 2014-03-12 株式会社アドバンテスト パターン測定装置及びパターン測定方法
JP6001945B2 (ja) * 2012-07-24 2016-10-05 株式会社日立ハイテクノロジーズ パターン計測装置及び方法

Also Published As

Publication number Publication date
WO2021235227A1 (ja) 2021-11-25
US20230186459A1 (en) 2023-06-15
CN115699278A (zh) 2023-02-03
JP2021182601A (ja) 2021-11-25
JP7303155B2 (ja) 2023-07-04
KR20230012016A (ko) 2023-01-25

Similar Documents

Publication Publication Date Title
US8295584B2 (en) Pattern measurement methods and pattern measurement equipment
US8507856B2 (en) Pattern measuring method and pattern measuring device
JP5694626B2 (ja) 構造の３次元粗さを測定する方法
KR101828124B1 (ko) 패턴 평가 방법 및 패턴 평가 장치
KR101730917B1 (ko) 오버레이 오차 측정 장치 및 컴퓨터 프로그램
JP3971937B2 (ja) 露光条件監視方法およびその装置並びに半導体デバイスの製造方法
US9000365B2 (en) Pattern measuring apparatus and computer program
KR102521799B1 (ko) 패턴 계측 장치 및 패턴 계측 방법
US8835881B2 (en) Drift correction method and pattern writing data generation method
JP2009252959A (ja) パターン検査装置、パターン検査方法および半導体装置の製造方法
TWI795788B (zh) 圖案檢查裝置以及輪廓線對準量取得方法
TWI870221B (zh) 非暫時性電腦可讀媒體
JP7303155B2 (ja) パターン測定方法
JPH0732111B2 (ja) 荷電ビ−ム投影露光装置
US5608226A (en) Electron-beam exposure method and system
JPH05190435A (ja) 半導体装置の電子線描画方法
WO2019188296A1 (ja) 画像生成方法
TW202105552A (zh) 畫像產生方法
US12387341B2 (en) Pattern matching method
JP2022153968A (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置