TW202200484A - Capacitive transducer and manufacturing method thereof - Google Patents

Abstract

A capacitive transducer including a substrate, a lower electrode, an oscillating element, an upper electrode, a first coating layer, and a plurality of second sealing parts is provided. The oscillating element includes an oscillating part, a connecting part, and a plurality of through holes. The first coating layer includes a protection part and a plurality of first sealing parts. The plurality of first sealing parts are disposed on the substrate. In the first direction, the plurality of first sealing parts overlap the plurality of through holes, wherein the first direction is perpendicular to the extending direction of the substrate. The plurality of second sealing parts are disposed in the plurality of sealing holes to form a plurality of sealing structures with the corresponding plurality of first sealing parts, wherein the materials of the plurality of first sealing parts and the plurality of second sealing parts are different.

Description

Capacitive transducer device and method of making the same

The present invention relates to a transducer device and a manufacturing method thereof, and more particularly, to a capacitive transducer device and a manufacturing method thereof.

In the current development of ultrasonic transducers, it can be divided into Bulk Piezoelectric Ceramics Transducer, Capacitive Micromachined Ultrasonic Transducer (CMUT) and Piezoelectric Micromachined Ultrasonic Transducer. Piezoelectric Micromachined Ultrasonic Transducer (PMUT), among which the bulk piezoelectric ceramic transducer is the most widely used. However, in the future trend, since the micromachined ultrasonic transducer is fabricated by the Microelectromechanical Systems (MEMS) process, it has greater process compatibility with integrated circuits, thus becoming the best solution for miniaturized ultrasonic systems. . Therefore, large-scale preparation and packaging can be further realized, and applications in non-destructive testing, medical imaging, ultrasonic microscopy, fingerprint identification or Internet of Things and other fields can be realized.

However, in the current fabrication of capacitive micromachined transducers, in addition to a certain precision in the etching process, the fabrication also gradually faces the problem of poor uniformity of the protective structure due to the etching process. In addition, the height of the sealing structure in the current capacitive micromechanical transducer cannot be further adjusted.

The invention provides a capacitive transducer device and a manufacturing method thereof, which can improve the uniformity of the protection part to maintain the stability of the oscillating part during oscillation, obtain good measurement quality and avoid the warpage of the board surface.

The invention provides a capacitive transducer device, comprising a substrate, a lower electrode, an oscillation element, an upper electrode, a first coating layer and a plurality of second sealing parts. The lower electrode is arranged on the substrate. The oscillating element includes an oscillating portion, a connecting portion, and a plurality of perforations. The oscillating part is connected to the lower electrode through the connecting part to form a cavity. The upper electrode is arranged on the oscillating part, and the oscillating part is located between the upper electrode and the lower electrode. The first coating layer includes a protection part and a plurality of first sealing parts, the protection part is formed on the oscillating part to cover the upper electrode, the plurality of first sealing parts are arranged on the substrate, and in the first direction, the plurality of first sealing parts are The sealing portion overlaps with the plurality of through holes, and the first direction is perpendicular to the extending direction of the substrate. The plurality of second sealing parts are arranged in the plurality of sealing holes to form a plurality of sealing structures with the corresponding plurality of first sealing parts, wherein the materials of the plurality of first sealing parts and the plurality of second sealing parts are different.

The present invention further provides a manufacturing method of a capacitive transducer device, comprising the following steps: sequentially providing a substrate, a lower electrode and a sacrificial layer; sequentially arranging an oscillation element and an upper electrode to a lower electrode and covering the sacrificial layer; forming on the oscillation element A plurality of through holes are removed and the sacrificial layer is removed to form a cavity; a first coating layer is arranged to cover the oscillating element and the upper electrode, and a part of the first coating layer passing through the plurality of through holes forms a plurality of first sealing parts in the lower electrode, Another part of the first coating layer forms a protection part; a second coating layer is arranged to cover the first coating layer, and a plurality of second sealing parts are formed in a part of the plurality of through holes in the second coating layer; The resist material is in a plurality of second sealing parts; and another part of the second coating layer is removed, wherein the corresponding plurality of first sealing parts and the plurality of second sealing parts are formed into a plurality of sealing structures , and the materials of the plurality of first plugging parts and the plurality of second plugging parts are different.

Based on the above, in the capacitive transducer device of the present invention, the oscillating element is used as the oscillating part, and the first coating layer is used as the protection part covering the oscillating element and the upper electrode, and the first sealing part in the sealing structure. The second coating layer is used as the second sealing portion in the sealing structure. In this way, it is not necessary to perform an etching process on the protection portion and the sealing structure, thereby improving the uniformity of the protection portion to maintain the stability of the oscillating portion during oscillation, so that the capacitive transducer device can obtain good measurement quality, and Since the coating height of the first coating layer in the vertical direction is the same, the warpage of the board surface can be avoided.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. The same reference numerals refer to the same elements throughout the specification. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may refer to the existence of other elements between the two elements.

It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections or parts shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that, when used in this specification, the terms "comprising" and/or "comprising" designate the stated feature, region, integer, step, operation, presence of an element and/or part, but do not exclude one or more The presence or addition of other features, entireties of regions, steps, operations, elements, components, and/or combinations thereof.

Furthermore, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the particular orientation of the drawings. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "under" can encompass both an orientation of above and below.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable deviation from the particular value as determined by one of ordinary skill in the art, given the measurement in question and the A specified amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately" or "substantially" may be used to select a more acceptable range of deviation or standard deviation depending on optical properties, etching properties or other properties, and not one standard deviation may apply to all properties. .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and the present invention, and are not to be construed as idealized or excessive Formal meaning, unless expressly defined as such herein.

Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and/or tolerances, are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the particular shapes of regions as shown herein, but rather include deviations in shapes resulting from, for example, manufacturing. For example, a region shown or described as flat may typically have rough and/or nonlinear features. Additionally, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

FIG. 1 is a schematic cross-sectional view of a capacitive transducer device according to an embodiment of the present invention. Please refer to Figure 1. The capacitive transducer device 100 of this embodiment is, for example, a capacitive micromachined ultrasonic transducer, which can be applied to fields such as non-destructive testing, medical imaging, ultrasonic microscopy, fingerprint identification, or the Internet of Things, but the present invention is not limited thereto. In this embodiment, the capacitive transducer device 100 includes a substrate 110 , a lower electrode 120 , an oscillation element 130 , an upper electrode 140 , a first coating layer 150 and a plurality of second sealing portions 162 .

2A to 2I are schematic cross-sectional views of the manufacturing process of the capacitive transducer device of FIG. 1 in sequence. Please refer to FIG. 1 and FIG. 2A at the same time. The lower electrode 120 is disposed on the substrate 110 . Specifically, in the step of manufacturing the capacitive transducer device 100 , the lower electrode 120 is formed on the surface of the substrate 110 by, for example, a Photo Engraving Process (PEP). The substrate 110 is, for example, a silicon substrate, and the material of the lower electrode 120 is, for example, titanium or aluminum, but the invention is not limited thereto.

Please refer to FIG. 1 and FIG. 2B at the same time. Next, after the above steps, the sacrificial layer 10 to the lower electrode 120 are arranged. The sacrificial layer 10 is used to be etched to form cavities in subsequent steps. In this embodiment, the heights of the sacrificial layers 10 in the first direction D1 are all the same. The sacrificial layer 10 is formed on the surface of the substrate 110 by, for example, a lithography process, and the sacrificial layer 10 is, for example, copper, but the invention is not limited thereto.

Please refer to FIG. 1 and FIG. 2C at the same time. Next, after the above steps, the oscillating element 130 is arranged to the lower electrode 120 and cover the sacrificial layer 10 . A part of the oscillating element 130 is used as an oscillating membrane in the capacitive transducer device 100 . For example, in this embodiment, the oscillating element 130 is, for example, silicon nitride (SiN _x ), and its height in the first direction D1 is the same, for example, 4500 angstroms, but the present invention does not limited to this. The oscillating element 130 is formed on the surfaces of the sacrificial layer 10 and the lower electrode 120 by, for example, a lithography process, but the invention is not limited thereto.

Please refer to FIG. 1 and FIG. 2D at the same time. Next, after the above steps, the upper electrode 140 is arranged to the oscillation element 130 . The upper electrode 140 and the sacrificial layer 10 are arranged in the middle, and the area occupied by the upper electrode 140 on a plane parallel to the horizontal plane is slightly smaller than that of the sacrificial layer 10 . The oscillating part 130 is located between the upper electrode 140 and the lower electrode 120 . The upper electrode 140 is formed on the surface of the oscillation element 130 by, for example, a lithography process, and the material of the upper electrode 140 is the same as that of the lower electrode, such as titanium or aluminum, but the invention is not limited thereto.

Please refer to FIG. 1 and FIG. 2E at the same time. Next, after the above steps, a plurality of through holes H are formed on the oscillating element 130 and the sacrificial layer 10 is removed to form a cavity C. Specifically, in this step, etching is performed on the oscillation element 130 to form a through hole H at the edge of the sacrificial layer 10 (see FIG. 2D ) for subsequent etching of the sacrificial layer 10 . The oscillating portion 132 is connected to the lower electrode 120 through the connecting portion 134 . Next, the sacrificial layer 10 covering the interior is etched to form the cavity C, thereby forming the oscillation portion 132 and the connection portion 134 . The heights of the cavities C in the first direction D1 are all the same, for example, 2000 angstroms, but the present invention is not limited thereto.

Please refer to Figure 1 and Figure 2F at the same time. Next, after the above steps, the first coating layer 150 is configured to cover the oscillation element 130 and the upper electrode 140 , wherein the first coating layer 150 includes a protection portion 154 and a plurality of first sealing portions 152 . The protection portion 154 is formed on the oscillating portion 132 to cover the upper electrode 140 , the plurality of first sealing portions 152 are disposed on the substrate 110 , and in the first direction D1 , the plurality of first sealing portions 152 and the plurality of through holes H are formed. Overlapping, the first direction D1 is perpendicular to the extending direction of the substrate 110 . In detail, a portion of the first coating layer 150 passing through the plurality of through holes H forms a plurality of first sealing portions 152 in the lower electrode 120 to be used as a part of the subsequent sealing structure, and the first coating layer Another part of 150 (ie, the part connected to the oscillation element 130 or the upper electrode 140 ) forms a protection part 154 for protecting the oscillation element 130 and the upper electrode 140 . In this embodiment, the first coating layer 150 is formed on the surfaces of the oscillation element 130 and the upper electrode 140 by, for example, a lithography process, and the first coating layer 150 is, for example, a silicon nitride. In different embodiments, the material of the first coating layer 150 may be the same as or different from that of the oscillating element 130 . In addition, the heights of the first coating layers 150 in the first direction D1 are all the same, for example, 2500 angstroms, but the present invention is not limited thereto.

Please refer to Figure 1 and Figure 2G at the same time. Next, after the above steps, the second coating layer 160 is disposed to cover the first coating layer 150 , wherein a portion of the second coating layer 160 overlapping the plurality of through holes H forms a plurality of first sealing portions 152 . The two sealing parts 162 , and the other part overlapping the plurality of through holes H forms a to-be-etched layer 164 on the protection part 154 . In this embodiment, the second coating layer 160 is formed on the surface of the first coating layer 150 by, for example, a lithography process, and the second coating layer 160 is, for example, indium tin oxide (ITO) or dioxide. Silicon (Silicon dioxide, SiO ₂ ). In addition, the heights of the second coating layers 160 in the first direction D1 are all the same, for example, 3500 angstroms, but the invention is not limited thereto. In other words, the plurality of second plugging portions 162 disposed in the plurality of plugging holes H and the corresponding plurality of first plugging portions 152 form a plurality of plugging structures S in the plurality of plugging holes H, and the first plugging structures S are formed in the plurality of plugging holes H. The material of the plugging portion 152 and the second plugging portion 162 are different.

Please refer to Figure 1 and Figure 2H at the same time. Next, after the above steps, the photoresist material 20 is disposed on the plurality of second sealing portions 162 to shield the structures to be retained in the subsequent etching process.

Please refer to FIG. 1 and FIG. 2I at the same time. Next, after the above steps, another part of the second coating layer 160 (ie, the to-be-etched layer 164 shown in FIG. 2H ) is removed. Specifically, the to-be-etched layer 164 is removed by, for example, an etching process, and in different embodiments, the photoresist material 20 can be selected from ethylene oxide according to the material of the second coating layer 160 (ie, amorphous silicon or indium tin oxide). Diacid (Oxalic acid, H ₂ C ₂ O ₄ ) (or: oxalic acid), potassium hydroxide (Potassium hydroxide, KOH) or hydrogen fluoride (Hydrogen fluoride, HF) for etching. Finally, the photoresist material 20 is removed to complete the manufacturing process, thereby forming the capacitive transducer device 100 as shown in FIG. 1 . In detail, the etching selectivity ratio between the second coating layer 160 and the first coating layer 150 is greater than 100, wherein the etching selectivity ratio is the ratio of the etching rate. For example, in one embodiment, the material of the first coating layer 150 is silicon nitride, the material of the second coating layer 160 is silicon dioxide, and the etching material is hydrogen fluoride. Since the etching rates of hydrogen fluoride for etching silicon dioxide and silicon nitride are about 2300 nm/min and 14 nm/min, respectively, it can be known that the etching selectivity ratio between the second coating layer 160 and the first coating layer 150 is about 164, so the structure of the first coating layer 150 can be effectively maintained when the second coating layer 160 is etched.

In this way, compared with the conventional technique, the capacitive transducer device 100 of the present embodiment does not need to perform an etching process on the protection portion 154 and the sealing structure S disposed on the upper electrode 140 , so that the protection portion 154 can be improved. The uniformity of the oscillating portion 132 during oscillation is maintained, so that the capacitive transducer device 100 can obtain good measurement quality. In addition, since the coating height of the first coating layer 150 in the first direction D1 is the same, the warpage of the board surface can be avoided.

Specifically, in the capacitive transducer device 100 in this embodiment, in the first direction D1 , the height HS of the sealing structure S is greater than the distance L1 from the top surface S1 of the lower electrode 120 to the top surface S2 of the oscillating portion 132 . . The height H1 of the plurality of first sealing parts 152 is greater than the height HC of the cavity C. The height H2 of the plurality of second plugging portions 162 is greater than the height H1 of the plurality of first plugging portions 152 . The height HS of the plurality of sealing structures S is greater than or equal to 2.7 times the height HC of the cavity. Since the plurality of first sealing parts 152 and the protection parts 154 are part of the first coating layer 150 , the height H3 of the protection parts 154 is equal to the height H1 of the plurality of first sealing parts 152 .

3 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the present invention. Please refer to Figure 4. The capacitive transducer device 100A of this embodiment is similar to the capacitive transducer device 100 shown in FIG. 1 . The difference between the two lies in that, in this embodiment, the hole-sealing structure S is used. The top surface S4 of the second hole sealing portion 162A may be flush with the top surface S3 of the protection portion 154 . In other words, the height HS of the plugging structure S is approximately equal to the maximum distance L2 from the top surface S1 of the lower electrode 120 to the top surface S3 of the protection portion 154 , but the invention is not limited thereto. In this way, the subsequent packaging process of the capacitive transducer device 100A can be facilitated.

4 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the present invention. Please refer to Figure 4. The capacitive transducer device 100B of this embodiment is similar to the capacitive transducer device 100 shown in FIG. 1 . The difference between the two is that, in the present embodiment, in the manufacturing process of finally removing the photoresist material 20 , a small part of the photoresist material 20 is retained to form the third sealing portion 170 in the sealing structure S . In other words, in this embodiment, the third plugging portions 170 are disposed on the top surfaces of the plurality of second plugging portions 162 . In addition, in the present embodiment, the top surface S5 of the third hole sealing portion 170 is a convex surface, so as to serve as the hole sealing cover of the hole sealing structure S, but the present invention is not limited to this. In this way, the present embodiment can further increase the strength of the sealing structure S of the capacitive transducer device 100B.

FIG. 5 is a flowchart of a manufacturing method of a capacitive transducer device according to an embodiment of the present invention. Please refer to FIG. 1 , FIG. 2A to FIG. 2I and FIG. 5 at the same time. In this embodiment, first, step S200 is performed to sequentially provide the substrate 110 , the lower electrode 120 and the sacrificial layer 10 . Next, after the above steps, step S201 is performed, and the oscillation element 130 and the upper electrode 140 to the lower electrode 120 are arranged in sequence and cover the sacrificial layer 10 . Next, after the above steps, step S202 is performed to form a plurality of through holes H on the oscillating element 130 and remove the sacrificial layer 10 to form a cavity C. Next, after the above steps, step S203 is performed to configure the first coating layer 150 to cover the oscillating element 130 and the upper electrode 140 . A part of the first coating layer 150 passing through the plurality of through holes H forms a plurality of first sealing parts 152 in the lower electrode 120 , and another part of the first coating layer 150 forms a protection part 154 . Next, after the above steps, step S204 is performed to configure the second coating layer 160 to cover the first coating layer 150 . A portion of the second coating layer 160 located in the plurality of through holes H forms a plurality of second sealing portions 162 . Next, after the above steps, step S205 is performed, and the photoresist material 20 is arranged on the plurality of second sealing parts 162 . Finally, after the above steps, step S205 is performed to remove another part of the second coating layer 160, wherein the corresponding plurality of first sealing parts 152 and the plurality of second sealing parts 162 are formed into a plurality of sealing parts The hole structure is S, and the materials of the plurality of first sealing parts 152 and the plurality of second sealing parts 162 are different. As a result, the capacitive transducer device 100 of the present embodiment does not need to perform an etching process on the protection portion 154 and the sealing structure S disposed on the upper electrode 140 , thereby improving the uniformity of the protection portion 154 to maintain the oscillation portion 132 The stability during oscillation enables the capacitive transducer device 100 to obtain good measurement quality, and since the coating height of the first coating layer 150 in the first direction D1 is consistent, the board surface can be prevented from warping.

To sum up, in the capacitive transducer device of the present invention, the oscillating element is used as the oscillating part, the first coating layer is used as the protection part covering the oscillating element and the upper electrode, and the first sealing hole in the sealing structure Department. The second coating layer is used as the second sealing portion in the sealing structure. In this way, it is not necessary to perform an etching process on the protection portion and the sealing structure, thereby improving the uniformity of the protection portion to maintain the stability of the oscillating portion during oscillation, so that the capacitive transducer device can obtain good measurement quality, and Since the coating height of the first coating layer in the vertical direction is the same, the warpage of the board surface can be avoided.

Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

10: Sacrificial Layer 20: Photoresist 100, 100A, 100B: Capacitive transducers 110: Substrate 120: Lower electrode 130: Oscillating element 132: Oscillation Department 134: Connector 140: Upper electrode 150: The first coating layer 152: The first sealing part 154: Ministry of Protection 162, 162A: The second sealing part 164: layer to be etched 170: The third sealing part C: cavity D1: first direction H: perforated HC,HS,H1,H2,H3: height L1, L2: distance S: Sealing structure S1, S2, S3, S4, S5: Top surface S200, S201, S202, S203, S204, S205: Steps

FIG. 1 is a schematic cross-sectional view of a capacitive transducer device according to an embodiment of the present invention. 2A to 2I are schematic cross-sectional views of the manufacturing process of the capacitive transducer device of FIG. 1 in sequence. 3 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the present invention. 4 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the present invention. FIG. 5 is a flowchart of a manufacturing method of a capacitive transducer device according to an embodiment of the present invention.

100: Capacitive transducer device

110: Substrate

120: Lower electrode

130: Oscillating element

132: Oscillation Department

134: Connector

140: Upper electrode

150: The first coating layer

152: The first sealing part

154: Ministry of Protection

162: The second sealing part

C: cavity

D1: first direction

H: perforated

HC,HS,H1,H2,H3: height

L1: Distance

S: Sealing structure

S1, S2: Top surface

Claims (14)

A capacitive transducer device, comprising: substrate; a lower electrode, disposed on the substrate; an oscillating element, comprising an oscillating part, a connecting part and a plurality of through holes, the oscillating part is connected to the lower electrode through the connecting part to form a cavity; an upper electrode, disposed on the oscillating part, and the oscillating part is located between the upper electrode and the lower electrode; the first coating layer includes a protection part and a plurality of first sealing parts, the protection part is formed on the oscillating part to cover the upper electrode, the plurality of first sealing parts are arranged on the substrate, and in a first direction, the plurality of first sealing parts overlap the plurality of through holes, the first direction is perpendicular to the extending direction of the substrate; and A plurality of second plugging parts are arranged in the plurality of plugging holes to form a plurality of plugging structures with the corresponding first plugging parts, wherein the plurality of first plugging parts and the The materials of the plurality of second plugging portions are different. The capacitive transducer device according to claim 1, wherein in the first direction, the height of the plurality of sealing structures is greater than the distance from the top surface of the lower electrode to the top surface of the oscillating portion. The capacitive transducer device according to claim 1, wherein in the first direction, a height of the plurality of first sealing parts is greater than a height of the cavity. The capacitive transducer device according to claim 1, wherein in the first direction, the heights of the plurality of second sealing parts are greater than the heights of the plurality of first sealing parts. The capacitive transducer device of claim 1, wherein in the first direction, the height of the plurality of sealing structures is greater than or equal to 2.7 times the height of the cavity. The capacitive transducer device of claim 1, wherein in the first direction, a height of the protection portion is equal to a height of the plurality of first sealing portions. The capacitive transducer device according to claim 1, wherein in the first direction, the heights of the plurality of sealing structures are approximately equal to the maximum height from the top surface of the lower electrode to the top surface of the protection portion distance. The capacitive transducer device of claim 1, wherein the material of the oscillating element is the same as the material of the first coating layer. The capacitive transducer device according to claim 1, wherein an etching selectivity ratio between the plurality of second hole sealing portions and the first coating layer is greater than 100, wherein the etching selectivity ratio is a ratio of an etching rate. The capacitive transducer device of claim 1, further comprising: The third plugging portion is disposed on the top surface of the plurality of second plugging portions. The capacitive transducer device according to claim 1, wherein a top surface of the third hole sealing portion is a convex surface. A manufacturing method of a capacitive transducer device, comprising: providing a substrate, a lower electrode and a sacrificial layer in sequence; Disposing the oscillation element and the upper electrode to the lower electrode in sequence and covering the sacrificial layer; forming a plurality of perforations on the oscillating element and removing the sacrificial layer to form a cavity; A first coating layer is arranged to cover the oscillation element and the upper electrode, and a part of the first coating layer passing through the plurality of through holes forms a plurality of first sealing parts in the lower electrode, so that Another part of the first coating layer forms a protection part; configuring a second coating layer to cover the first coating layer, and forming a plurality of second sealing parts in a part of the plurality of through holes in the middle of the second coating layer; disposing a photoresist material on the plurality of second sealing portions; and removing another part of the second coating layer, wherein the corresponding plurality of first sealing parts and the plurality of second sealing parts are formed into a plurality of sealing structures, and the plurality of The material of the first plugging portion and the plurality of second plugging portions are different. The manufacturing method of the capacitive transducer device according to claim 12, further comprising: The photoresist material is removed. The manufacturing method of the capacitive transducer device according to claim 12, further comprising: A portion of the photoresist material is removed so that the top surface of the photoresist material is formed as a convex surface.

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