CN112657816A - Capacitive transducer device and manufacturing method thereof - Google Patents
Capacitive transducer device and manufacturing method thereof Download PDFInfo
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- CN112657816A CN112657816A CN202011542239.3A CN202011542239A CN112657816A CN 112657816 A CN112657816 A CN 112657816A CN 202011542239 A CN202011542239 A CN 202011542239A CN 112657816 A CN112657816 A CN 112657816A
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000007789 sealing Methods 0.000 claims abstract description 85
- 230000010355 oscillation Effects 0.000 claims abstract description 37
- 239000011247 coating layer Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 63
- 238000007747 plating Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000002463 transducing effect Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009659 non-destructive testing Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
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Abstract
A capacitance type transducer device comprises a substrate, a lower electrode, an oscillation element, an upper electrode, a first coating layer and a plurality of second hole sealing parts. The lower electrode is disposed on the substrate. The oscillating element includes an oscillating portion, a connecting portion, and a plurality of perforations. The oscillating part is connected to the lower electrode by the connecting part to form a cavity. The upper electrode is disposed on the oscillating portion. The first coating layer comprises a protection part and a plurality of first hole sealing parts. The protection part is formed on the oscillation part to cover the upper electrode. The plurality of first hole sealing parts are arranged on the substrate. The first plugging portions are overlapped with the through holes in a first direction, wherein the first direction is perpendicular to the extending direction of the substrate. The plurality of second hole sealing parts are arranged in the plurality of holes to form a plurality of hole sealing structures with the corresponding plurality of first hole sealing parts, wherein the materials of the plurality of first hole sealing parts and the plurality of second hole sealing parts are different.
Description
Technical Field
The present invention relates to a transducer device and a method for manufacturing the same, and more particularly, to a capacitive transducer device and a method for manufacturing the same.
Background
In the development of the present Ultrasonic Transducer, the Ultrasonic Transducer can be divided into Bulk Piezoelectric ceramic Transducer (Bulk Piezoelectric ceramic Transducer), Capacitive micro-machined Ultrasonic Transducer (CMUT), and Piezoelectric micro-machined Ultrasonic Transducer (PMUT), wherein the Bulk Piezoelectric ceramic Transducer is most widely used. However, in the future trend, the micro-machined ultrasonic transducer is manufactured by micro-electro-mechanical Systems (MEMS) process, so that the micro-machined ultrasonic transducer has greater process compatibility with an integrated circuit, and thus becomes the best implementation scheme for the miniaturized ultrasonic system. Therefore, large-scale preparation and packaging can be further realized, and the method is applied to the fields of nondestructive testing, medical images, ultrasonic microscopes, fingerprint identification or the Internet of things and the like.
However, in the fabrication of the present capacitive micro-mechanical transducer, besides the etching process has a certain precision, the problem of poor uniformity of the protection structure caused by the etching process is also gradually encountered in the fabrication. In addition, the height of the hole sealing structure in the current capacitive micro-mechanical transducer cannot be further adjusted.
Disclosure of Invention
The invention provides a capacitive transducer and a manufacturing method thereof, which can improve the uniformity of a protection part to maintain the stability of an oscillation part during oscillation so as to obtain good measurement quality and avoid the warpage of a plate surface.
The invention provides a capacitance type transducer device which comprises a substrate, a lower electrode, an oscillating element, an upper electrode, a first coating layer and a plurality of second hole sealing parts. The lower electrode is disposed on the substrate. The oscillating element includes an oscillating portion, a connecting portion, and a plurality of perforations. The oscillating part is connected to the lower electrode by the connecting part to form a cavity. The upper electrode is configured on the oscillating part, and the oscillating part is positioned between the upper electrode and the lower electrode. The first coating layer comprises a protection part and a plurality of first hole sealing parts, the protection part is formed on the oscillation part to cover the upper electrode, the plurality of first hole sealing parts are arranged on the substrate, in a first direction, the plurality of first hole sealing parts are overlapped with the plurality of through holes, and the first direction is perpendicular to the extending direction of the substrate. The plurality of second hole sealing parts are arranged in the plurality of holes to form a plurality of hole sealing structures with the corresponding plurality of first hole sealing parts, wherein the materials of the plurality of first hole sealing parts and the plurality of second hole sealing parts are different.
The invention also provides a manufacturing method of the capacitive transducer device, which comprises the following steps: sequentially providing a substrate, a lower electrode and a sacrificial layer; sequentially arranging an oscillation element and an upper electrode to a lower electrode and covering the sacrificial layer; forming a plurality of through holes on the oscillation element and removing the sacrificial layer to form a cavity; arranging a first coating layer to cover the oscillating element and the upper electrode, wherein a plurality of first hole sealing parts are formed on the lower electrode through one part of the plurality of through holes in the first coating layer, and a protection part is formed on the other part of the first coating layer; arranging a second coating layer to cover the first coating layer, wherein a plurality of second hole sealing parts are formed in one part of the plurality of through holes in the second coating layer; configuring photoresist material in the second hole sealing parts; and removing the other part of the second coating layer, wherein the corresponding first hole sealing parts and the second hole sealing parts form a plurality of hole sealing structures, and the materials of the first hole sealing parts and the second hole sealing parts are different.
In view of the above, in the capacitive transducer of the present invention, the oscillation element is used as the oscillation portion, and the first coating layer is used as the protection portion covering the oscillation element and the upper electrode and the first hole sealing portion in the hole sealing structure. The second coating layer is used as a second hole sealing part in the hole sealing structure. Therefore, the protection part and the hole sealing structure do not need to be etched, the uniformity of the protection part can be further improved to maintain the stability of the oscillation part during oscillation, the capacitance type transducer device can obtain good measurement quality, and the warping of the plate surface can be avoided due to the consistent coating height of the first coating layer in the vertical direction.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
Fig. 1 is a schematic cross-sectional view of a capacitive transducer device according to an embodiment of the invention.
Fig. 2A to fig. 2I are schematic cross-sectional views illustrating a manufacturing process of the capacitive transducer device of fig. 1 in sequence.
Fig. 3 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the invention.
FIG. 5 is a flow chart of a method of fabricating a capacitive transducer device according to an embodiment of the invention.
Wherein the reference numerals
10: sacrificial layer
20: photoresist material
100,100A, 100B: capacitive transducer
110: substrate
120: lower electrode
130: oscillating element
132: oscillating part
134: connecting part
140: upper electrode
150: first coating film layer
152: the first hole sealing part
154: protection part
162,162A: second hole sealing part
164: layer to be etched
170: third hole sealing part
C: hollow cavity
D1: a first direction
H: perforation
HC, HS, H1, H2, H3: height
L1, L2: distance between two adjacent plates
S: hole sealing structure
S1, S2, S3, S4, S5: the top surface
S200, S201, S202, S203, S204, S205: step (ii) of
Detailed Description
The following detailed description of the embodiments of the present invention with reference to the drawings and specific examples is provided for further understanding the objects, aspects and effects of the present invention, but not for limiting the scope of the appended claims.
In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, "electrically connected" or "coupled" may mean that there are additional elements between the two elements.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer" or "portion" discussed below could be termed a second element, component, region, layer or portion without departing from the teachings herein.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one", unless the content clearly indicates otherwise. "or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions integers, steps, operations, elements, components, and/or groups thereof.
Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element, as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "lower" can include both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etch properties, or other properties, with a more acceptable range of deviation or standard deviation, and not all properties may be applied with one standard deviation.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Exemplary embodiments are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments. Thus, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat may generally have rough and/or nonlinear features. Further, the acute angles shown may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
Fig. 1 is a schematic cross-sectional view of a capacitive transducer device according to an embodiment of the invention. Please refer to fig. 1. The capacitive transduction apparatus 100 of the embodiment is, for example, a capacitive micromachined ultrasonic transducer, and may be applied to the fields of nondestructive testing, medical imaging, ultrasonic microscopy, fingerprint identification, internet of things, and the like, but the invention is not limited thereto. In the present embodiment, the capacitive transducer device 100 includes a substrate 110, a lower electrode 120, an oscillation element 130, an upper electrode 140, a first coating layer 150, and a plurality of second hole sealing portions 162.
Fig. 2A to fig. 2I are schematic cross-sectional views illustrating a manufacturing process of the capacitive transducer device of fig. 1 in sequence. Please refer to fig. 1 and fig. 2A simultaneously. The bottom electrode 120 is disposed on the substrate 110. In detail, in the step of manufacturing the capacitive transducer device 100, the bottom electrode 120 is formed on the surface of the substrate 110 by, for example, a photolithography Process (PEP). The substrate 110 is, for example, a silicon substrate, and the material of the bottom electrode 120 is, for example, titanium or aluminum, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2B simultaneously. Next, after the above steps, the sacrificial layer 10 is disposed to the lower electrode 120. The sacrificial layer 10 is intended to be etched in a subsequent step to form a cavity. In the present embodiment, the heights of the sacrificial layers 10 in the first direction D1 are all the same. The sacrificial layer 10 is formed on the surface of the substrate 110 by a photolithography process, and the sacrificial layer 10 is copper, for example, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2C simultaneously. Next, after the above steps, the oscillation element 130 is disposed to the lower electrode 120 and covers the sacrificial layer 10. A portion of the oscillating element 130 is used as an oscillating membrane in the capacitive transducer device 100. For example, in the present embodiment, the oscillation element 130 is, for example, Silicon nitride (SiNx), and the heights thereof in the first direction D1 are all the same, for example, 4500 angstroms, but the invention is not limited thereto. The oscillation element 130 is formed on the surface of the sacrificial layer 10 and the lower electrode 120 by a photolithography process, for example, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2D simultaneously. Next, after the above steps, the upper electrode 140 is disposed on the oscillation element 130. The upper electrode 140 is disposed in a central configuration with the sacrificial layer 10, and has a slightly smaller area than the sacrificial layer 10 on a plane parallel to the horizontal plane. The oscillating portion 130 is located between the upper electrode 140 and the lower electrode 120. The upper electrode 140 is formed on the surface of the oscillation element 130 by a photolithography process, and the material of the upper electrode 140 is the same as that of the lower electrode, such as titanium or aluminum, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2E simultaneously. Next, after the above steps, a plurality of through holes H are formed on the oscillation element 130 and the sacrificial layer 10 is removed to form a cavity C. Specifically, in this step, an etching process (etching) is performed on the oscillating element 130 to form a through hole H at the edge of the sacrificial layer 10 (see fig. 2D) for performing a subsequent etching process on the sacrificial layer 10. The oscillating portion 132 is connected to the lower electrode 120 via a connecting portion 134. Next, the sacrificial layer 10 covering the inside is etched to form a cavity C, thereby forming the oscillation portion 132 and the connection portion 134. The height of the cavity C in the first direction D1 is the same, such as 2000 angstroms, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2F simultaneously. Next, after the above steps, a first plating layer 150 is disposed to cover the oscillation element 130 and the upper electrode 140, wherein the first plating layer 150 includes a protection portion 154 and a plurality of first hole sealing portions 152. The protection portion 154 is formed on the oscillating portion 132 to cover the upper electrode 140, and the plurality of first plugging portions 152 are disposed on the substrate 110, and in the first direction D1, the plurality of first plugging portions 152 overlap with the plurality of through holes H, and the first direction D1 is perpendicular to the extending direction of the substrate 110. In detail, a plurality of first hole sealing portions 152 are formed in the first plating layer 150 on the lower electrode 120 through a portion of the plurality of through holes H to serve as a portion of a subsequent hole sealing structure, and a protection portion 154 is formed on another portion of the first plating layer 150 (i.e., a portion connected to the oscillation element 130 or the upper electrode 140) to protect the oscillation element 130 and the upper electrode 140. In the present embodiment, the first plating layer 150 is formed on the surfaces of the oscillation element 130 and the upper electrode 140 by photolithography, for example, and the first plating layer 150 is silicon nitride, for example. In different embodiments, the material of the first coating layer 150 may be the same as or different from the oscillating element 130. In addition, the heights of the first plating layers 150 in the first direction D1 are all the same, for example, 2500 angstroms, but the invention is not limited thereto.
Please refer to fig. 1 and fig. 2G simultaneously. Then, after the above steps, the second plating layer 160 is disposed to cover the first plating layer 150, wherein a plurality of second hole sealing portions 162 are formed in the first hole sealing portion 152 at positions overlapping with a portion of the plurality of through holes H in the second plating layer 160, and a layer to be etched 164 is formed in the protection portion 154 at positions overlapping with another portion of the plurality of through holes H. In the present embodiment, the second plating layer 160 is formed on the surface of the first plating layer 150 by photolithography, for example, and the second plating layer 160 is Indium Tin Oxide (ITO) or Silicon dioxide (SiO 2), for example. In addition, the heights of the second plating layer 160 in the first direction D1 are all the same, such as 3500 angstroms, but the invention is not limited thereto. In other words, the second hole sealing portions 162 arranged in the holes H and the corresponding first hole sealing portions 152 form a plurality of hole sealing structures S in the holes H, and the materials of the first hole sealing portions 152 are different from those of the second hole sealing portions 162.
Please refer to fig. 1 and fig. 2H simultaneously. Then, after the above steps, the photoresist material 20 is disposed in the second hole-sealing portions 162 to shield the structures to be remained in the subsequent etching process.
Please refer to fig. 1 and fig. 2I simultaneously. Next, another portion of the second plating layer 160 (i.e., the layer to be etched 164 shown in FIG. 2H) is removed after the above steps. Specifically, the layer to be etched 164 is removed by an etching process, and in various embodiments, the photoresist material 20 may be etched by using Oxalic acid (or Oxalic acid), Potassium hydroxide (KOH), or Hydrogen Fluoride (HF) according to the material of the second plating layer 160 (i.e., amorphous silicon or indium tin oxide). Finally, the photoresist 20 is removed to complete the fabrication process, thereby forming the capacitive transducer device 100 as shown in fig. 1. In detail, the etching selectivity ratio of the second plating layer 160 to the first plating layer 150 is greater than 100, wherein the etching selectivity ratio is a ratio of etching rates. For example, in one embodiment, the first coating 150 is silicon nitride, the second coating 160 is silicon dioxide, and the etching material is hydrogen fluoride. Since the etching rates of the silicon dioxide and the silicon nitride by the hydrogen fluoride are respectively about 2300 nm/min and 14 nm/min, the etching selectivity ratio of the second film coating 160 to the first film coating 150 is about 164, so that the structure of the first film coating 150 can be effectively maintained when the second film coating 160 is etched.
As such, compared to the prior art, the capacitive transducer device 100 of the present embodiment does not need to perform an etching process on the protection portion 154 and the hole sealing structure S disposed on the upper electrode 140, and the uniformity of the protection portion 154 can be improved to maintain the stability of the oscillating portion 132 during oscillation, so that the capacitive transducer device 100 can obtain good measurement quality. In addition, since the coating heights of the first coating layer 150 in the first direction D1 are consistent, the warpage of the board surface can be avoided.
Specifically, in the capacitive transducer device 100 of the present embodiment, in the first direction D1, the height HS of the hole sealing structure S is greater than the distance L1 from the top surface S1 of the lower electrode 120 to the top surface S2 of the oscillating portion 132. The height H1 of the first plugged portions 152 is greater than the height HC of the cavity C. The height H2 of the second plurality of blanking portions 162 is greater than the height H1 of the first plurality of blanking portions 152. The height HS of the plurality of hole sealing structures S is greater than or equal to 2.7 times the height HC of the cavity. Since the plurality of first plugging portions 152 and the protection portion 154 are part of the first coating layer 150, the height H3 of the protection portion 154 is equal to the height H1 of the plurality of first plugging portions 152.
Fig. 3 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the invention. Please refer to fig. 4. The capacitive transducing device 100A of the present embodiment is similar to the capacitive transducing device 100 shown in fig. 1. The difference between the two is that in the present embodiment, the hole sealing structure S is provided. The top surface S4 of the second plugging portion 162A may be aligned with the top surface S3 of the protection portion 154. In other words, the height HS of the sealing structure S is substantially equal to the maximum distance L2 from the top surface S1 of the lower electrode 120 to the top surface S3 of the protection part 154, but the present invention is not limited thereto. Thus, the subsequent packaging process of the capacitive transducer device 100A is facilitated.
Fig. 4 is a schematic cross-sectional view of a capacitive transducer device according to another embodiment of the invention. Please refer to fig. 4. The capacitive transducing device 100B of the present embodiment is similar to the capacitive transducing device 100 shown in fig. 1. The difference between the two is that, in the present embodiment, a small portion of the photoresist 20 is remained in the manufacturing process of finally removing the photoresist 20 to form the third hole sealing portion 170 in the hole sealing structure S. In other words, in the present embodiment, the third plugging portion 170 is disposed on the top surfaces of the plurality of second plugging portions 162. In addition, in the embodiment, the top surface S5 of the third plugging portion 170 is a convex surface to serve as a plugging cover of the plugging structure S, but the invention is not limited thereto. As such, the present embodiment can further increase the strength of the hole sealing structure S of the capacitive transducer device 100B.
FIG. 5 is a flow chart of a method of fabricating a capacitive transducer device according to an embodiment of the invention. Please refer to fig. 1, fig. 2A to fig. 2I and fig. 5. In the present embodiment, first, step S200 is performed to provide the substrate 110, the bottom electrode 120 and the sacrificial layer 10 in sequence. Next, after the above steps, step S201 is performed to sequentially dispose the oscillation element 130 and the upper electrode 140 to the lower electrode 120 and cover the sacrificial layer 10. Next, after the above steps, step S202 is performed to form a plurality of through holes H on the oscillation element 130 and remove the sacrificial layer 10 to form the cavity C. Next, after the above steps, step S203 is performed to dispose the first plating layer 150 to cover the oscillation element 130 and the upper electrode 140. A plurality of first plugging portions 152 are formed in the first plating layer 150 on the lower electrode 120 through a portion of the plurality of through holes H, and a protection portion 154 is formed at another portion of the first plating layer 150. Next, after the above steps, step S204 is performed to dispose the second plating layer 160 to cover the first plating layer 150. A plurality of second plugging portions 162 are formed in a portion of the second plating layer 160 located in the plurality of through holes H. Next, after the above steps, step S205 is performed to dispose the photoresist 20 in the plurality of second plugging portions 162. Finally, after the above steps, step S205 is executed to remove another portion of the second plating layer 160, wherein the corresponding first hole sealing portions 152 and the second hole sealing portions 162 are formed as a plurality of hole sealing structures S, and the materials of the first hole sealing portions 152 and the second hole sealing portions 162 are different. In this way, the capacitive transducer device 100 of the present embodiment does not need to perform an etching process on the protection portion 154 and the hole sealing structure S disposed on the upper electrode 140, and further, the uniformity of the protection portion 154 can be improved to maintain the stability of the oscillating portion 132 during oscillation, so that the capacitive transducer device 100 can obtain good measurement quality, and since the coating heights of the first coating layer 150 in the first direction D1 are consistent, the plate surface warpage can be avoided.
In summary, in the capacitive transducer of the present invention, the oscillation element is used as the oscillation portion, and the first film layer is used as the protection portion covering the oscillation element and the upper electrode and the first hole sealing portion in the hole sealing structure. The second coating layer is used as a second hole sealing part in the hole sealing structure. Therefore, the protection part and the hole sealing structure do not need to be etched, the uniformity of the protection part can be further improved to maintain the stability of the oscillation part during oscillation, the capacitance type transducer device can obtain good measurement quality, and the warping of the plate surface can be avoided due to the consistent coating height of the first coating layer in the vertical direction.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. A capacitive transducer device, comprising:
a substrate;
a lower electrode disposed on the substrate;
the oscillating element comprises an oscillating part, a connecting part and a plurality of through holes, wherein the oscillating part is connected to the lower electrode through the connecting part to form a cavity;
an upper electrode disposed in the oscillating portion, the oscillating portion being located between the upper electrode and the lower electrode;
a first plating layer including a protection portion formed on the oscillation portion so as to cover the upper electrode, and a plurality of first hole sealing portions arranged on the substrate and overlapping the plurality of through holes in a first direction perpendicular to an extending direction of the substrate; and
and the second hole sealing parts are arranged in the plurality of holes to form a plurality of hole sealing structures with the corresponding first hole sealing parts, wherein the materials of the first hole sealing parts and the second hole sealing parts are different.
2. The capacitive transducer device according to claim 1, wherein a height of the plurality of hole sealing structures in the first direction is greater than a distance from a top surface of the lower electrode to a top surface of the oscillating portion.
3. The capacitive transducer arrangement of claim 1, wherein a height of the plurality of first keyhole portions is greater than a height of the cavity in the first direction.
4. The capacitive transducer arrangement of claim 1, wherein the height of the second plurality of perforation portions is greater than the height of the first plurality of perforation portions in the first direction.
5. The capacitive transducer device of claim 1, wherein a height of the plurality of hole sealing structures is greater than or equal to 2.7 times a height of the cavity in the first direction.
6. The capacitive transducer assembly of claim 1, wherein a height of the guard portion is equal to a height of the first plurality of keyhole portions in the first direction.
7. The capacitive transducer device according to claim 1, wherein a height of the plurality of hole sealing structures in the first direction is substantially equal to a maximum distance from a top surface of the lower electrode to a top surface of the guard portion.
8. The capacitive transducer assembly of claim 1, wherein the oscillating element is the same material as the first coating.
9. The capacitive transducer assembly of claim 1, wherein an etch selectivity ratio of the plurality of second hole shut portions to the first plating layer is greater than 100, wherein the etch selectivity ratio is a ratio of etch rates.
10. The capacitive transducer apparatus of claim 1, further comprising:
and a third hole sealing part configured on the top surfaces of the plurality of second hole sealing parts.
11. The capacitive transducer assembly of claim 1, wherein the top surface of the third aperture portion is convex.
12. A method of manufacturing a capacitive transducer device, comprising:
sequentially providing a substrate, a lower electrode and a sacrificial layer;
sequentially configuring an oscillation element and an upper electrode to the lower electrode and covering the sacrificial layer;
forming a plurality of through holes on the oscillation element and removing the sacrificial layer to form a cavity;
arranging a first coating layer to cover the oscillating element and the upper electrode, wherein a plurality of first hole sealing parts are formed on the lower electrode through one part of the plurality of through holes in the first coating layer, and a protection part is formed on the other part of the first coating layer;
configuring a second coating layer to cover the first coating layer, wherein a plurality of second hole sealing parts are formed in one part of the plurality of through holes in the second coating layer;
arranging photoresist material in the second hole sealing parts; and
and removing the other part of the second coating layer, wherein the corresponding first hole sealing parts and the second hole sealing parts are formed into a plurality of hole sealing structures, and the materials of the first hole sealing parts and the second hole sealing parts are different.
13. The method of manufacturing a capacitive transducer device as defined in claim 12, further comprising:
and removing the photoresist material.
14. The method of manufacturing a capacitive transducer device as defined in claim 12, further comprising:
removing a part of the photoresist material to form a convex surface on the top surface of the photoresist material.
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| TW109120790A TWI718073B (en) | 2020-06-19 | 2020-06-19 | Capacitive transducer and manufacturing method thereof |
| TW109120790 | 2020-06-19 |
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| TWI797475B (en) * | 2020-08-21 | 2023-04-01 | 友達光電股份有限公司 | Capacitive transducer and manufacturing method thereof |
| TWI813407B (en) * | 2022-08-02 | 2023-08-21 | 友達光電股份有限公司 | Capacitive transducer and manufacturing method thereof |
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Also Published As
| Publication number | Publication date |
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| TWI718073B (en) | 2021-02-01 |
| TW202200484A (en) | 2022-01-01 |
| CN112657816B (en) | 2022-06-28 |
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