TW202200392A - Peeling method of polymer film, manufacturing method of electronic device, and peeling device capable of easily peeling a polymer film from an inorganic substrate - Google Patents
Peeling method of polymer film, manufacturing method of electronic device, and peeling device capable of easily peeling a polymer film from an inorganic substrate Download PDFInfo
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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Abstract
Description
本發明係關於高分子薄膜之剝離方法、電子裝置之製造方法、及剝離裝置。The present invention relates to a method for peeling off a polymer film, a method for manufacturing an electronic device, and a peeling device.
近年來,以半導體元件、MEMS元件、顯示器元件等功能元件的輕量化、小型/薄型化、可撓化為目的,正在積極地進行在高分子薄膜上形成這些元件之技術開發。也就是說,作為如信息通訊設備(廣播設備、行動無線電、可攜式通訊設備等)、雷達或高速信息處理裝置等的電子零件之基材的材料,以往係使用具有耐熱性且亦能對應信息通訊設備的信號頻帶之高頻化(達到GHz帶)的陶瓷,但由於陶瓷不可撓也難以薄型化,而有能應用的領域受到限定之缺點,因此最近係使用高分子薄膜作為基板。In recent years, with the aim of reducing the weight, size/thinning, and flexibility of functional elements such as semiconductor elements, MEMS elements, and display elements, the development of technologies for forming these elements on polymer films has been actively pursued. That is to say, as a material for the base material of electronic parts such as information communication equipment (broadcasting equipment, mobile radio, portable communication equipment, etc.), radar, and high-speed information processing devices, conventionally used materials that have heat resistance and can also cope with The high frequency of the signal frequency band of information communication equipment (up to the GHz band) ceramics, but because ceramics are inflexible and difficult to thin, and the field of application is limited, so polymer films are recently used as substrates.
在高分子薄膜表面上形成半導體元件、MEMS元件、顯示器元件等的功能元件時,理想上係利用高分子薄膜的特性之可撓性,以所謂的卷對卷製程進行加工。然而,在半導體產業、MEMS產業、顯示器產業等業界,至今已經建立起以晶圓基座(wafer base)或玻璃基板基座(base)等剛性的平面基板為對象之製程技術。因此,為了利用既有基礎設施在高分子薄膜上形成功能元件,係使用將高分子薄膜貼合在包含例如玻璃板、陶瓷板、矽晶圓、金屬板等的無機物之剛性的支撐體上,於其上形成期望的元件後自支撐體剝離之製程。When forming functional elements such as semiconductor elements, MEMS elements, and display elements on the surface of a polymer film, ideally, it is processed by a so-called roll-to-roll process utilizing the flexibility of the polymer film. However, in industries such as the semiconductor industry, the MEMS industry, and the display industry, process technologies for rigid planar substrates such as wafer bases and glass substrate bases have been established so far. Therefore, in order to use the existing infrastructure to form functional elements on the polymer film, the polymer film is bonded to a rigid support including inorganic substances such as glass plates, ceramic plates, silicon wafers, metal plates, etc., The process of peeling from the support after forming the desired element thereon.
以往,作為將高分子薄膜自支撐體剝離之方法,已知有藉由照射雷射光來減弱高分子薄膜與支撐體之間的附著力,再加以剝離之方法(例如參照專利文獻1)。 [先前技術文獻] [專利文獻]Conventionally, as a method of peeling a polymer film from a support, a method of reducing the adhesion between the polymer film and the support by irradiating laser light and then peeling is known (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]
專利文獻1:日本特開平10-125931號公報Patent Document 1: Japanese Patent Application Laid-Open No. 10-125931
[發明欲解決之課題][The problem to be solved by the invention]
然而,在專利文獻1的方法中,為了將雷射光照射至支撐體的整面,而有需要用於照射雷射光之大規模的照射裝置之問題。又,由於照射雷射光,所以有在高分子薄膜上產生燒焦等,對高分子薄膜的品質造成影響之問題。又,擔心因雷射的光洩漏而照射到形成在高分子薄膜表面上的電路與裝置、及安裝在高分子薄膜上的元件,或是因產生雷射加熱的衝擊波而對品質產生影響。針對機械性剝離,也會擔心伴隨著高分子薄膜的變形,對高分子薄膜本身的應力所致之損傷,以及對形成在高分子薄膜表面上的電路與裝置、及安裝在高分子薄膜上的元件的品質產生影響。However, in the method of Patent Document 1, in order to irradiate the entire surface of the support body with the laser light, there is a problem that a large-scale irradiation apparatus for irradiating the laser light is required. In addition, there is a problem in that the quality of the polymer film is affected, for example, by scorching on the polymer film due to the irradiation of laser light. In addition, there is concern that the leakage of laser light may irradiate circuits and devices formed on the surface of the polymer film, and components mounted on the polymer film, or that the shock wave heated by the laser may affect the quality. For mechanical peeling, there are also concerns about the deformation of the polymer film, damage to the polymer film itself due to stress, and damage to the circuits and devices formed on the surface of the polymer film, as well as the devices mounted on the polymer film. The quality of the components has an impact.
本發明係鑒於上述課題而完成者,其目的係提供高分子薄膜之剝離方法、電子裝置之製造方法、及剝離裝置,其中該高分子薄膜之剝離方法能夠不對高分子薄膜、形成在高分子薄膜表面上的電路與裝置、及安裝在高分子薄膜上的元件的品質產生影響,輕易地將高分子薄膜自無機基板剝離。 [用以解決課題之手段]The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method for peeling off a polymer film, a method for manufacturing an electronic device, and a peeling device, wherein the method for peeling off a polymer film can remove the polymer film from being formed on the polymer film. The quality of circuits and devices on the surface and components mounted on the polymer film are affected, and the polymer film is easily peeled off from the inorganic substrate. [means to solve the problem]
本發明人針對高分子薄膜之剝離方法、電子裝置之製造方法、及剝離裝置進行仔細研究。其結果,發現藉由採用下述構成,能夠不對高分子薄膜、形成在高分子薄膜表面上的電路與裝置、及安裝在高分子薄膜上的元件的品質產生影響,輕易地將高分子薄膜自無機基板剝離,而完成了本發明。The inventors of the present invention have conducted careful research on a method for peeling off a polymer film, a method for manufacturing an electronic device, and a peeling device. As a result, it was found that by adopting the following configuration, the polymer film can be easily freed from the polymer film without affecting the quality of the polymer film, circuits and devices formed on the surface of the polymer film, and elements mounted on the polymer film. The inorganic substrate was peeled off, and the present invention was completed.
也就是說,本發明提供以下。 (1)一種高分子薄膜之剝離方法,其包含: 步驟A:準備高分子薄膜與無機基板貼合而成的積層體, 步驟B:於前述積層體的端部,在前述高分子薄膜與前述無機基板之間形成剝離部分, 步驟C:在前述步驟B之後,藉由在前述高分子薄膜的未與前述無機基板貼合之非貼合面與前述剝離部分之間提供靜壓差,將前述高分子薄膜自前述無機基板剝離。That is, the present invention provides the following. (1) A peeling method of a polymer film, comprising: Step A: Prepare a laminate formed by bonding the polymer film and the inorganic substrate, Step B: forming a peeling portion between the polymer film and the inorganic substrate at the end of the laminate, Step C: After the aforementioned Step B, by providing a static pressure difference between the non-bonding surface of the polymer film that is not bonded to the inorganic substrate and the peeling portion, the polymer film is peeled off from the inorganic substrate .
依據前述構成,由於不是機械性剝離,而是藉由前述非貼合面與前述剝離部分之間的靜壓差將前述高分子薄膜自前述無機基板剝離,所以能夠不對高分子薄膜的品質產生影響,輕易地將高分子薄膜自無機基板剝離。According to the above configuration, the polymer thin film is peeled off from the inorganic substrate by the static pressure difference between the non-bonding surface and the peeling portion, not mechanically, so that the quality of the polymer thin film can not be affected. , easily peeling off the polymer film from the inorganic substrate.
(2)前述(1)之構成中,較佳為前述步驟A係準備在前述積層體的高分子薄膜上設有功能元件之附有功能元件的積層體的步驟。(2) In the configuration of the above (1), it is preferable that the above-mentioned step A is a step of preparing a functional element-attached laminate in which the functional element is provided on the polymer film of the laminate.
(3)前述(1)或前述(2)之構成中,前述步驟C較佳為包含: 步驟D-1:在前述高分子薄膜的前述非貼合面側配置滾筒,藉由前述滾筒,將前述高分子薄膜往前述剝離部分方向推壓, 步驟D-2:使前述非貼合面側小於大氣壓力,另一方面使前述剝離部分為大氣壓力,藉此提供前述靜壓差, 步驟D-3:在前述步驟D-1及前述步驟D-2之後,使前述滾筒的面相對於前述高分子薄膜的前述非貼合面平行地移動,並因應前述滾筒的移動使前述剝離進行。(3) In the constitution of the aforementioned (1) or the aforementioned (2), the aforementioned step C preferably includes: Step D-1: Arrange a roller on the non-bonding surface side of the polymer film, and push the polymer film toward the peeling part by the roller, Step D-2: Make the non-bonding surface side less than the atmospheric pressure, and on the other hand make the peeling part be the atmospheric pressure, thereby providing the static pressure difference, Step D-3: After Step D-1 and Step D-2, move the surface of the roller parallel to the non-bonding surface of the polymer film, and perform the peeling according to the movement of the roller.
依據前述構成,由於使滾筒的面相對於高分子薄膜的前述非貼合面平行地移動,並因應前述滾筒的移動使前述剝離進行,所以能控制剝離速度。其結果,能抑制對高分子薄膜施加過度的負荷。According to the said structure, since the surface of a roller is moved parallel to the said non-bonding surface of a polymer film, and the said peeling is performed according to the movement of the said roller, the peeling speed can be controlled. As a result, the application of an excessive load to the polymer film can be suppressed.
(4)前述(3)之構成中,較佳為在前述高分子薄膜與前述滾筒之間配置有網目狀薄片。(4) In the configuration of the above (3), it is preferable that a mesh-like sheet is arranged between the polymer film and the roll.
依據前述構成,由於在前述高分子薄膜與前述滾筒之間配置有網目狀薄片,所以能保持剝離後的前述高分子薄膜。According to the above configuration, since the mesh-like sheet is arranged between the polymer film and the roll, the peeled polymer film can be held.
(5)前述(1)或前述(2)之構成中,前述步驟C較佳為包含: 步驟E-1:使前述非貼合面側為大氣壓力以上,另一方面使前述剝離部分為大氣壓力, 步驟E-2:在前述步驟E-1之後,使前述剝離部分為比前述非貼合面側的壓力更高的壓力,藉此提供前述靜壓差。(5) In the constitution of the aforementioned (1) or the aforementioned (2), the aforementioned step C preferably includes: Step E-1: Make the above-mentioned non-bonding surface side be at atmospheric pressure or higher, on the other hand, make the above-mentioned peeling part be at atmospheric pressure, Step E-2: After the aforementioned Step E-1, the aforementioned peeling portion is made to have a higher pressure than the aforementioned pressure on the non-bonding surface side, thereby providing the aforementioned static pressure difference.
依據前述構成,預先使前述非貼合面側為大氣壓力以上,然後使前述剝離部分為比前述非貼合面側的壓力更高的壓力,藉此提供前述靜壓差,將前述高分子薄膜自前述無機基板剝離。由於使前述非貼合面側為大氣壓力以上,所以能保持剝離後的前述高分子薄膜。According to the above-mentioned configuration, the pressure of the non-bonding surface side is set to be equal to or higher than the atmospheric pressure in advance, and then the pressure of the peeling part is higher than the pressure of the non-bonding surface side, thereby providing the static pressure difference, and the polymer film is separated. peeled off from the aforementioned inorganic substrate. Since the said non-bonding surface side is made into atmospheric pressure or more, the said polymer film after peeling can be hold|maintained.
(6)前述(1)之構成中,在前述積層體的前述高分子薄膜上形成有功能元件,且前述步驟C較佳為包含: 步驟F-1:在前述高分子薄膜的前述非貼合面側配置多孔質柔軟體,於將前述功能元件嵌入前述多孔質柔軟體的同時,藉由前述多孔質柔軟體將前述高分子薄膜往前述剝離部分方向推壓, 步驟F-2:使前述非貼合面側小於大氣壓力,另一方面使前述剝離部分為大氣壓力,藉此提供前述靜壓差。(6) In the configuration of (1) above, a functional element is formed on the polymer film of the laminate, and the step C preferably includes: Step F-1: Disposing a porous soft body on the non-adhering surface side of the polymer film, while embedding the functional element into the porous soft body, the polymer film is transferred to the porous soft body by the porous soft body. The aforementioned peeling part is pushed in the direction, Step F-2: The above-mentioned static pressure difference is provided by making the said non-bonding surface side less than atmospheric pressure, and making the said peeling part be atmospheric pressure on the other hand.
依據前述構成,由於係在將前述功能元件嵌入前述多孔質柔軟體中的狀態下提供前述靜壓差,將前述高分子薄膜自前述無機基板剝離,所以能抑制在前述功能元件所位於的地方對高分子薄膜施加過度的負荷。According to the above configuration, since the static pressure difference is provided in a state where the functional element is embedded in the porous flexible body, and the polymer thin film is peeled off from the inorganic substrate, it is possible to suppress the friction at the place where the functional element is located. The polymer film exerts an excessive load.
(7)前述(1)、前述(3)~前述(5)之構成中,在前述積層體的前述高分子薄膜上形成有功能元件,且 在前述步驟C之前,較佳為包含步驟X:在前述高分子薄膜的未設置前述功能元件之面上,設置具有與前述功能元件的厚度相同程度的厚度之隔片。(7) In the configurations of (1), (3) to (5) above, a functional element is formed on the polymer thin film of the laminate, and Before the aforementioned step C, it is preferable to include a step X: on the surface of the aforementioned polymer film on which the aforementioned functional elements are not arranged, a spacer having the same thickness as that of the aforementioned functional elements is arranged.
依據前述構成,能藉由前述隔片減少高分子薄膜上的凹凸。其結果,在剝離時,能抑制在前述功能元件所位於的地方對高分子薄膜施加過度的負荷。According to the said structure, the unevenness|corrugation on the polymer film can be reduced by the said spacer. As a result, at the time of peeling, it can be suppressed that an excessive load is applied to the polymer film where the functional element is located.
(8)前述(1)、前述(3)~前述(5)之構成中,在前述積層體的前述高分子薄膜上形成有功能元件,且 在前述步驟C之前,較佳為包含步驟Y:在前述高分子薄膜上配置嵌入用構件,並將前述功能元件嵌入前述嵌入用構件中。(8) In the configuration of the above (1), the above (3) to the above (5), a functional element is formed on the polymer thin film of the layered product, and Before the aforementioned step C, it is preferable to include a step Y: disposing the member for embedding on the aforementioned polymer film, and embedding the aforementioned functional element in the aforementioned member for embedding.
依據前述構成,由於係在藉由嵌入用構件嵌入前述功能元件之狀態下提供前述靜壓差,將前述高分子薄膜自前述無機基板剝離,所以能抑制在前述功能元件所位於的地方對高分子薄膜施加過度的負荷。According to the above configuration, since the static pressure difference is provided in a state where the functional element is embedded by the embedding member, and the polymer thin film is peeled off from the inorganic substrate, it is possible to prevent the polymer thin film from being exposed to the polymer at the place where the functional element is located. Excessive load applied to the film.
(9)一種電子裝置之製造方法,其特徵為包含: 步驟A-1:準備附有功能元件的積層體,該附有功能元件的積層體具有高分子薄膜與無機基板貼合而成的積層體、與設置在前述積層體的前述高分子薄膜上之功能元件, 步驟B:於前述積層體的端部,在前述高分子薄膜與前述無機基板之間設置剝離部分, 步驟C:在前述步驟B之後,藉由在前述高分子薄膜的未與前述無機基板貼合之側的非貼合面與前述剝離部分之間提供靜壓差,將前述高分子薄膜自前述無機基板剝離。(9) A manufacturing method of an electronic device, characterized by comprising: Step A-1: Prepare a functional element-attached laminate, which includes a laminate in which a polymer film and an inorganic substrate are bonded together, and the polymer film provided on the laminate. functional elements, Step B: disposing a peeling portion between the polymer film and the inorganic substrate at the end of the laminate, Step C: After the aforementioned Step B, by providing a static pressure difference between the non-bonding surface of the polymer film on the side that is not bonded to the inorganic substrate and the peeling portion, the polymer film is removed from the inorganic substrate. Substrate peeling.
依據前述構成,由於不是機械性剝離,而是藉由前述非貼合面與前述剝離部分之間的靜壓差將前述高分子薄膜自前述無機基板剝離,所以能夠不對高分子薄膜的品質產生影響,輕易地將高分子薄膜自無機基板剝離。由於能輕易地將設置有功能元件的高分子薄膜自無機基板剝離,所以剝離之附有功能元件的高分子薄膜可使用在電子裝置。According to the above configuration, the polymer thin film is peeled off from the inorganic substrate by the static pressure difference between the non-bonding surface and the peeling portion, not mechanically, so that the quality of the polymer thin film can not be affected. , easily peeling off the polymer film from the inorganic substrate. Since the polymer film provided with functional elements can be easily peeled off from the inorganic substrate, the peeled polymer film with functional elements can be used in electronic devices.
(10)一種剝離裝置,其係從高分子薄膜與無機基板貼合而成的積層體,將前述高分子薄膜自前述無機基板剝離之剝離裝置, 其特徵為具備靜壓差形成手段,該靜壓差形成手段係在前述高分子薄膜的未與前述無機基板貼合之側的非貼合面、與設置於前述積層體的端部之前述高分子薄膜與前述無機基板的剝離部分之間提供靜壓差。(10) A peeling device for peeling the polymer thin film from the inorganic substrate from a laminate formed by bonding a polymer thin film and an inorganic substrate, It is characterized by being provided with a static pressure difference forming means, the static pressure difference forming means being provided on the non-bonding surface of the polymer film on the side that is not bonded to the inorganic substrate and the height provided at the end of the laminate. A static pressure difference is provided between the molecular thin film and the peeled portion of the aforementioned inorganic substrate.
依據前述構成,由於不是機械性剝離,而是藉由利用靜壓差形成手段所形成的在前述非貼合面與前述剝離部分之間的靜壓差將前述高分子薄膜自前述無機基板剝離,所以能夠不對高分子薄膜的品質產生影響,輕易地將高分子薄膜自無機基板剝離。 [發明之效果]According to the above configuration, the polymer thin film is peeled off from the inorganic substrate by the static pressure difference between the non-bonding surface and the peeling portion formed by the static pressure difference forming means instead of mechanical peeling. Therefore, the polymer film can be easily peeled off from the inorganic substrate without affecting the quality of the polymer film. [Effect of invention]
依據本發明,能夠不對高分子薄膜的品質產生影響,輕易地將高分子薄膜自無機基板剝離。According to the present invention, the polymer thin film can be easily peeled off from the inorganic substrate without affecting the quality of the polymer thin film.
[用以實施發明的形態][Form for carrying out the invention]
以下針對本發明之實施形態進行說明。以下針對高分子薄膜之剝離方法進行說明,其中,針對電子裝置之製造方法、及剝離裝置亦進行說明。Embodiments of the present invention will be described below. Hereinafter, the peeling method of the polymer film will be described, and the manufacturing method of the electronic device and the peeling apparatus will also be described.
[高分子薄膜之剝離方法] 本實施形態之高分子薄膜之剝離方法包含: 步驟A:準備高分子薄膜與無機基板貼合而成的積層體, 步驟B:於前述積層體的端部,在前述高分子薄膜與前述無機基板之間形成剝離部分, 步驟C:在前述步驟B之後,藉由在前述高分子薄膜的未與前述無機基板貼合之非貼合面與前述剝離部分之間提供靜壓差,將前述高分子薄膜自前述無機基板剝離。[Peeling method of polymer film] The peeling method of the polymer film of this embodiment includes: Step A: Prepare a laminate formed by bonding the polymer film and the inorganic substrate, Step B: forming a peeling portion between the polymer film and the inorganic substrate at the end of the laminate, Step C: After the aforementioned Step B, by providing a static pressure difference between the non-bonding surface of the polymer film that is not bonded to the inorganic substrate and the peeling portion, the polymer film is peeled off from the inorganic substrate .
<步驟A>
於本實施形態之高分子薄膜之剝離方法中,首先準備高分子薄膜與無機基板貼合而成的積層體(步驟A)。圖1為顯示積層體的一例之示意截面圖。如圖1所示,積層體10具備無機基板12與高分子薄膜14。無機基板12與高分子薄膜14貼合。無機基板12與高分子薄膜14可隔著未圖示的矽烷偶合劑層貼合。
此外,於本實施形態中,能藉由將預先另外製造的高分子薄膜接著(積層)在無機基板上而得到積層體。作為積層的方法,除了使用後述的矽烷偶合劑之積層方法以外,也能應用既有眾所皆知的接著劑、接著片、黏著劑、黏著片等。又,此時,前述接著劑、前述接著片、前述黏著劑、前述黏著片可以先貼在無機基板側上,也可以先貼在高分子薄膜側上。
又,作為製作高分子薄膜與無機基板之積層體的其他方法,可舉出以下方法:藉由將高分子薄膜形成用的高分子溶液或高分子的前驅物之溶液塗布在無機基板上,進行乾燥及視需要的化學反應,在無機基板上將高分子進行薄膜化而得到積層體。藉由使用可溶性聚醯亞胺之溶液作為高分子溶液,使用經由化學反應變成聚醯亞胺之聚醯胺酸溶液等作為高分子前驅物,可得到高分子薄膜與無機基板之積層體。又,此時,藉由對無機基板進行矽烷偶合劑處理等的表面處理,控制高分子薄膜與無機基板的接著性較佳的態樣之一。此時,為了控制無機基板與高分子薄膜的剝離強度,可作成已知的易剝離的高分子層(易剝離層)與主要的高分子層(高分子薄膜)之2層構成、或主層(高分子薄膜)與無機薄膜層之2層構成。也可應用其他用於控制剝離力之既有構成。
在易剝離的高分子層(易剝離層)與主要的高分子層(高分子薄膜)之2層構成的情形中,有以下情形:易剝離的高分子層(易剝離層)與無機基板之接著力比易剝離的高分子層(易剝離層)與主要的高分子層(高分子薄膜)之接著力更強地接著,在主要的高分子層(高分子薄膜)與易剝離的高分子層(易剝離層)之間剝離的設計;易剝離的高分子層(易剝離層)與主要的高分子層(高分子薄膜)之接著力,比易剝離的高分子層(易剝離層)與無機基板之接著力更強,在易剝離的高分子層(易剝離層)與無機基板之間剝離的設計。
關於易剝離的高分子層(易剝離層)與無機基板之接著力比易剝離的高分子層(易剝離層)與主要的高分子層(高分子薄膜)之接著力更強地接著,在主要的高分子層(高分子薄膜)與易剝離的高分子層(易剝離層)之間剝離的設計之情形,易剝離的高分子層(易剝離層)堆積於無機基板者,係相當於本發明中的無機基板。
在與無機薄膜層之2層構成的情形中,可舉出藉由在無機基板上製膜無機薄膜層,然後在無機薄膜層上將溶液或高分子的前驅物之溶液塗布在無機基板上,進行乾燥及視需要的化學反應,在無機基板上將高分子進行薄膜化而得到積層體之方法。此情形,變成在無機基板上的無機薄膜與高分子層之間剝離。此情形,無機薄膜堆積於無機基板者,係相當於本發明中的無機基板。
作為使用高分子溶液或高分子前驅物溶液之手法的變形,將包含溶劑的半固體狀態(高黏度糊狀)之高分子薄膜壓接在無機基板上後進行追加乾燥或視需要的化學反應,也可得到高分子薄膜與無機基板之積層體。更具體來說,藉由將目標物之高分子溶液或高分子前驅物溶液塗布在聚對苯二甲酸乙二酯等的支撐膜上,半乾燥至殘存溶劑份量在濕量基準下成為5~40質量%左右,可作成具有塑性變形性之半固體的薄膜(有時也稱為生膜(green film)或凝膠膜(gel film))。若將如此得到的半固體狀態之薄膜壓接在無機基板上,進行乾燥與熱處理等,則可得到高分子薄膜與無機基板之積層體。
於本實施形態,在使用熱塑性的高分子之情形中,可藉由直接將高分子熔融擠出至無機基板上而得到積層體。又,在熱塑性的高分子薄膜之情形中,可藉由將無機基板與高分子薄膜重疊,在加壓狀態下加熱至高分子的熔點或軟化溫度而將兩者壓接,作成積層體。<Step A>
In the peeling method of the polymer film of the present embodiment, first, a laminate in which the polymer film and the inorganic substrate are bonded together is prepared (step A). FIG. 1 is a schematic cross-sectional view showing an example of a laminated body. As shown in FIG. 1 , the
作為無機基板12,只要是可使用作為由無機物構成之基板的板狀者即可,可舉出例如:以玻璃板、陶瓷板、半導體晶圓、金屬等為主體者,以及作為這些玻璃板、陶瓷板、半導體晶圓、金屬的複合體,將此等積層而成者、將此等分散而成者、含有此等的纖維者等。The
無機基板12的厚度沒有特別限制,但從處理性的觀點來看較佳為10mm以下的厚度,更佳為3mm以下,再更佳為1.3mm以下。針對厚度的下限沒有特別限制,但較佳為0.05mm以上,更佳為0.3mm以上,再更佳為0.5mm以上。The thickness of the
作為高分子薄膜14,沒有特別限定,但可例示:聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、氟化聚醯亞胺等聚醯亞胺系樹脂(例如芳香族聚醯亞胺樹脂、脂環族聚醯亞胺樹脂);聚乙烯、聚丙烯、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚2,6-萘二甲酸乙二酯等共聚合聚酯(例如全芳香族聚酯、半芳香族聚酯);以聚甲基丙烯酸甲酯為代表之共聚合(甲基)丙烯酸酯;聚碳酸酯;聚醯胺;聚碸;聚醚碸;聚醚酮;乙酸纖維素;硝酸纖維素;芳香族聚醯胺;聚氯乙烯;多酚;聚芳酯;聚苯硫醚;聚伸苯醚;聚苯乙烯等的薄膜。
高分子薄膜14的厚度沒有特別限制,但從處理性的觀點來看較佳為250μm以下,更佳為100μm以下,再更佳為50μm以下。針對厚度的下限沒有特別限制,但較佳為3μm以上,更佳為5μm以上,再更佳為10μm以上。The
前述矽烷偶合劑層係物理性或化學性地介於無機基板12與高分子薄膜14之間,具有使無機基板與高分子薄膜貼合之作用。
本實施形態中所使用的矽烷偶合劑沒有特別限定,但較佳為包含具有胺基之偶合劑。
作為前述矽烷偶合劑的較佳具體例,可舉出:N-2-(胺乙基)-3-胺丙基甲基二甲氧基矽烷、N-2-(胺乙基)-3-胺丙基三甲氧基矽烷、N-2-(胺乙基)-3-胺丙基三乙氧基矽烷、3-胺丙基三甲氧基矽烷、3-胺丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基-亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、乙烯基三氯矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、對苯乙烯基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-苯基-3-胺丙基三甲氧基矽烷、N-(乙烯基苯甲基)-2-胺乙基-3-胺丙基三甲氧基矽烷鹽酸鹽、胺苯基三甲氧基矽烷、胺苯乙基三甲氧基矽烷、3-脲丙基三乙氧基矽烷、3-氯丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、3-巰基丙基三甲氧基矽烷、四硫化雙(三乙氧基矽基丙基)、3-異氰酸丙基三乙氧基矽烷、三聚異氰酸參-(3-三甲氧基矽基丙基)酯、氯甲基苯乙基三甲氧基矽烷、氯甲基三甲氧基矽烷、胺苯基三甲氧基矽烷、胺苯乙基三甲氧基矽烷、胺苯基胺甲基苯乙基三甲氧基矽烷等。
作為前述矽烷偶合劑,除了前述以外,也可使用:正丙基三甲氧基矽烷、丁基三氯矽烷、2-氰乙基三乙氧基矽烷、環己基三氯矽烷、癸基三氯矽烷、二乙醯氧基二甲基矽烷、二乙氧基二甲基矽烷、二甲氧基二甲基矽烷、二甲氧基二苯基矽烷、二甲氧基甲基苯基矽烷、十二烷基三氯矽烷、十二烷基三甲氧基矽烷、乙基三氯矽烷、己基三甲氧基矽烷、十八烷基三乙氧基矽烷、十八烷基三甲氧基矽烷、正辛基三氯矽烷、正辛基三乙氧基矽烷、正辛基三甲氧基矽烷、三乙氧基乙基矽烷、三乙氧基甲基矽烷、三甲氧基甲基矽烷、三甲氧基苯基矽烷、戊基三乙氧基矽烷、戊基三氯矽烷、三乙醯氧基甲基矽烷、三氯己基矽烷、三氯甲基矽烷、三氯十八烷基矽烷、三氯丙基矽烷、三氯十四烷基矽烷、三甲氧基丙基矽烷、烯丙基三氯矽烷、烯丙基三乙氧基矽烷、烯丙基三甲氧基矽烷、二乙氧基甲基乙烯基矽烷、二甲氧基甲基乙烯基矽烷、三氯乙烯基矽烷、三乙氧基乙烯基矽烷、乙烯基參(2-甲氧基乙氧基)矽烷、三氯-2-氰乙基矽烷、二乙氧基(3-環氧丙基氧基丙基)甲基矽烷、3-環氧丙基氧基丙基(二甲氧基)甲基矽烷、3-環氧丙基氧基丙基三甲氧基矽烷等。The aforementioned silane coupling agent layer is physically or chemically interposed between the
前述矽烷偶合劑之中,特佳為在1個分子中具有1個矽原子之矽烷偶合劑,可舉出例如:N-2-(胺乙基)-3-胺丙基甲基二甲氧基矽烷、N-2-(胺乙基)-3-胺丙基三甲氧基矽烷、N-2-(胺乙基)-3-胺丙基三乙氧基矽烷、3-胺丙基三甲氧基矽烷、3-胺丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基-亞丁基)丙胺、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、胺苯基三甲氧基矽烷、胺苯乙基三甲氧基矽烷、胺苯基胺甲基苯乙基三甲氧基矽烷等。於製程中要求特別高的耐熱性之情形,期望為將Si與胺基之間以芳香族基連接者。 作為前述偶合劑,除了前述以外,也可使用:1-巰基-2-丙醇、3-巰基丙酸甲酯、3-巰基-2-丁醇、3-巰基丙酸丁酯、3-(二甲氧基甲基矽基)-1-丙硫醇、4-(6-巰基己醯基)苯甲醇、11-胺基-1-十一烯硫醇、11-巰基十一烷基膦酸、三氟乙酸11-巰基十一烷酯、2,2’-(伸乙基二氧基)二乙硫醇、11-巰基十一基三(乙二醇)、(1-巰基十一烷-11-基)四(乙二醇)、1-(甲基羧基)十一烷-11-基)六(乙二醇)、二硫化羥基十一烷基、二硫化羧基十一烷基、二硫化羥基六-十二烷基、二硫化羧基十六烷基、肆(2-乙基己基氧基)鈦、二辛氧基雙(乙醇酸伸辛酯)鈦、三丁氧基單乙醯丙酮鋯、單丁氧基乙醯丙酮雙(乙醯乙酸乙酯)鋯、三丁氧基單硬脂酸鋯、乙醯烷氧基鋁二異丙酸酯、3-環氧丙基氧基丙基三甲氧基矽烷、2,3-丁二硫醇、1-丁硫醇、2-丁硫醇、環己硫醇、環戊硫醇、1-癸硫醇、1-十二硫醇、3-巰基丙酸2-乙基己酯、3-巰基丙酸乙酯、1-庚硫醇、1-十六硫醇、己硫醇、異戊硫醇、異丁硫醇、3-巰基丙酸、3-巰基丙酸-3-甲氧基丁酯、2-甲基-1-丁硫醇、1-十八硫醇、1-辛硫醇、1-十五硫醇、1-戊硫醇、1-丙硫醇、1-十四硫醇、1-十一硫醇、1-(12-巰基十二烷基)咪唑、1-(11-巰基十一烷基)咪唑、1-(10-巰基癸基)咪唑、1-(16-巰基十六烷基)咪唑、1-(17-巰基十七烷基)咪唑、1-(15-巰基)十二酸、1-(11-巰基)十一酸、1-(10-巰基)癸酸等。Among the above-mentioned silane coupling agents, those having one silicon atom in one molecule are particularly preferred, and examples thereof include N-2-(aminoethyl)-3-aminopropylmethyldimethoxy Silane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane Oxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylene)propylamine, 2-(3,4-epoxy ring Hexyl)ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltrimethoxysilane Ethoxysilane, amine phenyl trimethoxy silane, amine phenethyl trimethoxy silane, amine phenyl amine methyl phenethyl trimethoxy silane, etc. In the case where particularly high heat resistance is required in the process, it is desirable to connect Si and an amine group with an aromatic group. As the above-mentioned coupling agent, in addition to the above, 1-mercapto-2-propanol, methyl 3-mercaptopropionate, 3-mercapto-2-butanol, butyl 3-mercaptopropionate, 3-( Dimethoxymethylsilyl)-1-propanethiol, 4-(6-mercaptohexyl)benzyl alcohol, 11-amino-1-undecenethiol, 11-mercaptoundecylphosphine acid, 11-mercaptoundecyl trifluoroacetate, 2,2'-(ethylenedioxy)diethanethiol, 11-mercaptoundecyltris(ethylene glycol), (1-mercaptoundecyl) Alk-11-yl)tetrakis(ethylene glycol), 1-(methylcarboxy)undecan-11-yl)hexa(ethylene glycol), hydroxyundecyl disulfide, carboxyundecyl disulfide , hydroxyhexadecyl disulfide, carboxyhexadecyl disulfide, tetra(2-ethylhexyloxy) titanium, dioctyloxy bis(dioctyl glycolate) titanium, tributoxy mono Zirconium acetylacetonate, bis(ethyl acetate) zirconium acetylacetonate, zirconium tributoxy monostearate, acetyl alkoxyaluminum diisopropionate, 3-epoxypropyl Oxypropyltrimethoxysilane, 2,3-butanedithiol, 1-butanethiol, 2-butanethiol, cyclohexanethiol, cyclopentanethiol, 1-decanethiol, 1-dodecanethiol Thiol, 2-ethylhexyl 3-mercaptopropionate, ethyl 3-mercaptopropionate, 1-heptanethiol, 1-hexadecanethiol, hexanethiol, isoamylthiol, isobutanethiol, 3-Mercaptopropionic acid, 3-Mercaptopropionic acid-3-methoxybutyl ester, 2-methyl-1-butanethiol, 1-octadecanethiol, 1-octanethiol, 1-pentadecanthiol , 1-pentanethiol, 1-propanethiol, 1-tetradecanethiol, 1-undecanethiol, 1-(12-mercaptododecyl)imidazole, 1-(11-mercaptoundecyl) ) imidazole, 1-(10-mercaptodecyl) imidazole, 1-(16-mercaptohexadecyl) imidazole, 1-(17-mercaptoheptadecyl) imidazole, 1-(15-mercapto) dodecanoic acid , 1-(11-mercapto)undecanoic acid, 1-(10-mercapto)decanoic acid, etc.
作為矽烷偶合劑之塗布方法(矽烷偶合劑層之形成方法),可以使用將矽烷偶合劑溶液塗布在無機基板12上之方法或蒸鍍法等。此外,矽烷偶合劑層之形成也可在高分子薄膜14的表面上進行。As the coating method of the silane coupling agent (the formation method of the silane coupling agent layer), the method of coating the silane coupling agent solution on the
矽烷偶合劑層的膜厚就算是與無機基板12、高分子薄膜14等相比也是極薄,從機械設計的觀點來看為被無視的程度之厚度,原理上最低限度只要有單分子層等級的厚度即為充分。The film thickness of the silane coupling agent layer is extremely thin even when compared with the
塗布矽烷偶合劑後,能經由使無機基板12與高分子薄膜14貼合之步驟與加熱之步驟表現積層體的接著力。貼合的方法沒有特別限定,有積層、加壓等。貼合與加熱可以是同時進行,也可以是依序進行。加熱方法沒有特別限定,可以放入烘箱、熱積層、熱壓等。After the silane coupling agent is applied, the adhesive force of the laminate can be expressed through the step of laminating the
作為高分子薄膜與無機基板貼合而成的積層體之製作方法,可以在分別製作無機基板與高分子薄膜後予以貼合,此時,也可以使用已知的矽烷偶合劑以外之易剝離的接著劑、接著片、黏著劑、黏著片來貼附。又,此時,前述接著劑、前述接著片、前述黏著劑、前述黏著片可以先附著在無機基板側上,也可以先附著在高分子薄膜側上。又,作為高分子薄膜與無機基板貼合而成的積層體之其他製作方法,可以將高分子薄膜形成用的清漆塗布在無機基板上再予以乾燥。此時,為了控制無機基板與高分子薄膜之剝離強度,也可以作成已知的易剝離的清漆層(易剝離層)與主要的清漆層(高分子薄膜)之2層構成、或主層(高分子薄膜)與無機薄膜層之2層構成。As a method for producing a layered product in which a polymer film and an inorganic substrate are bonded, the inorganic substrate and the polymer film may be separately produced and then bonded. In this case, a known silane coupling agent other than an easily peelable material may be used. Adhesives, adhesive sheets, adhesives, and adhesive sheets to attach. In this case, the adhesive agent, the adhesive sheet, the adhesive agent, and the adhesive sheet may be attached to the inorganic substrate side first, or may be attached to the polymer film side first. In addition, as another method for producing a laminate in which a polymer thin film and an inorganic substrate are bonded together, a varnish for forming a polymer thin film may be applied on the inorganic substrate and then dried. In this case, in order to control the peeling strength between the inorganic substrate and the polymer film, a known easy-to-peel varnish layer (easy-peel layer) and a main varnish layer (polymer film) may be formed in two layers, or the main layer ( The polymer film) and the inorganic film layer are composed of two layers.
<步驟B>
接下來,於積層體10的端部,在高分子薄膜14與無機基板12之間形成剝離部分18(步驟B)。<Step B>
Next, a peeling
作為設置剝離部分18之方法,沒有特別限制,可採用:以鑷子等自末端捲起之方法;在高分子薄膜14上形成切口,使黏著膠帶貼附在切口部分的一邊上後,自該膠帶部分捲起之方法;真空吸附高分子薄膜14的切口部分的一邊後,自該部分捲起之方法等。
作為在高分子薄膜14上形成切口的方法,有:以刀具等的切割工具切開高分子薄膜14之方法、藉由使雷射與積層體10相對地掃描而切開高分子薄膜14之方法、藉由使水刀與積層體10相對地掃描而切開高分子薄膜14之方法、藉由半導體晶片的切割裝置在稍微切割到玻璃層的同時切開高分子薄膜14之方法等,但方法沒有特別限定。例如,在採用上述方法時,也可適當採用使超音波疊加至切割工具上、添加來回動作或上下動作等使切割性能提升等手法。
又,雖然未圖示,但為了使剝離部分18不會再貼合而維持剝離狀態,也可在剝離部分18夾著沒有黏著性、接著性的薄膜或薄片。又,也可以在剝離部分18夾著於單面有黏著性、接著性的薄膜或薄片。又,也可以在剝離部分18夾著金屬零件(例如針)。There is no particular limitation on the method of providing the peeling
<步驟C>
在前述步驟B之後,藉由在高分子薄膜14的未與無機基板12貼合之側的面(非貼合面14a)與剝離部分18之間提供靜壓差,將高分子薄膜14自無機基板12剝離(步驟C)。<Step C>
After the aforementioned step B, the
以下針對步驟C的具體例進行說明。A specific example of step C will be described below.
[第1實施形態]
圖2為第1實施形態之剝離裝置的示意截面圖。如圖2所示,第1實施形態之剝離裝置20具備真空室30、滾筒32、真空吸盤34、虛設薄膜(dummy film)36、與網目狀薄片38。[1st Embodiment]
Fig. 2 is a schematic cross-sectional view of the peeling device according to the first embodiment. As shown in FIG. 2 , the peeling
滾筒32係配置成能在真空室30內移動。The
真空吸盤34可吸附積層體10而保持,能在吸附住積層體10的狀態下使其位於真空室30的上方。The
虛設薄膜36係配置在真空室30的上面開口,具有對應於積層體10的大小之開口。The
網目狀薄片38係配置在真空室30的上面以覆蓋住真空室30的上面開口。The mesh-shaped
第1實施形態之步驟C包含步驟D-1、步驟D-2、及步驟D-3。剝離裝置20係藉由如下所述地動作,進行步驟D-1、步驟D-2、及步驟D-3。Step C of the first embodiment includes Step D-1, Step D-2, and Step D-3. The peeling
首先,剝離裝置20係以真空吸盤34吸附積層體10的無機基板12側,使其位於真空室30的上方。此時,以使積層體10位於虛設薄膜36的開口的方式使其位移。又,此時,使積層體10的高分子薄膜14接觸到網目狀薄片38。First, the peeling
接下來,剝離裝置20係將滾筒32配置在高分子薄膜14的非貼合面14a側,藉由滾筒32,將高分子薄膜14往剝離部分18方向(圖2中為上方)推壓(步驟D-1)。Next, the peeling
接下來,剝離裝置20係藉由幫浦P使真空室30內小於大氣壓力。此處,剝離部分18為大氣壓力。藉此,在高分子薄膜14的非貼合面14a與剝離部分18之間提供靜壓差。也就是說,使非貼合面14a側小於大氣壓力,另一方面使剝離部分18為大氣壓力,藉此提供靜壓差(步驟D-2)。
此外,在此狀態下,由於滾筒32係將高分子薄膜14往剝離部分18方向推壓,所以不會進行剝離。Next, the peeling
接下來,剝離裝置20係使滾筒32的面(與高分子薄膜14的接觸面)相對於高分子薄膜14的非貼合面14a平行地移動。圖3為第1實施形態之剝離裝置的示意截面圖,係顯示使滾筒移動的狀態之圖。如圖3所示,若使滾筒32從剝離部分18下方往橫向(圖3中為左方)移動,則會從經由滾筒32的推壓分開的部分開始依序進行剝離部分18的剝離。也就是說,使滾筒32的面相對於高分子薄膜14的非貼合面14a平行地移動,並因應滾筒32的移動使剝離進行(步驟D-3)。然後,藉由使滾筒32移動至形成有剝離部分18的邊之對邊的正下方,將高分子薄膜14全體自無機基板12剝離。
如此一來,在剝離裝置20中,由於使滾筒32的面相對於高分子薄膜14的非貼合面14a平行地移動,並因應滾筒32的移動使剝離進行,所以能控制剝離速度。其結果,能抑制對高分子薄膜14施加過度的負荷。
藉由進一步改變滾筒32的半徑,能控制高分子薄膜14的剝離角度。例如若縮小滾筒32的半徑,則以依照其的曲率半徑剝離高分子薄膜14,若加大滾筒32的半徑,則以依照其的曲率半徑剝離高分子薄膜14。藉由縮小滾筒32的半徑可將剝離裝置小型化,藉由加大滾筒32的半徑,可減少施加在形成於高分子薄膜14上的功能元件之負荷。又,如後所述,藉由支撐組件33,能將滾筒32的滾筒直徑與剝離的曲率半徑分開規定。
此外,真空室30及真空吸盤34係相當於本發明的靜壓差形成手段。Next, the peeling
前述滾筒的半徑為40mm以上1000mm以下,更佳為60mm以上100mm以下。 作為前述滾筒的材質,較佳為具有一定程度的彈性之材質,可使用例如:矽氧橡膠、氟橡膠、胺酯橡膠、乙烯丙烯橡膠等。 前述滾筒材質的回彈模數(JIS K 6255:2013)較佳為3~60%。 前述滾筒材質的橡膠硬度較佳為50~90,較佳為非黏著性且抗靜電或導電性者。The radius of the roller is 40 mm or more and 1000 mm or less, more preferably 60 mm or more and 100 mm or less. As the material of the aforementioned roller, preferably a material with a certain degree of elasticity can be used, for example, silicone rubber, fluorine rubber, urethane rubber, ethylene propylene rubber, and the like. The modulus of resilience (JIS K 6255:2013) of the aforementioned roller material is preferably 3 to 60%. The rubber hardness of the aforementioned roller material is preferably 50-90, preferably non-adhesive and antistatic or conductive.
此處,於本實施形態中,係在高分子薄膜14與滾筒32之間配置有網目狀薄片38。由於在高分子薄膜14與滾筒32之間配置有網目狀薄片38,所以能保持剝離後的高分子薄膜14。作為網目狀薄片38,只要具通氣性且有一定程度的強度即可,能使用例如眾所皆知的篩目等。
此外,於本實施形態中,雖然針對使用網目狀薄片38的情形進行說明,但在剝離裝置20中,亦可作成未配置網目狀薄片的構成。此情形,每次從真空室30內取出剝離的高分子薄膜14即可。Here, in the present embodiment, the mesh-
作為前述網目狀薄片的材質,較佳為適當彈性變形之材質,具體來說較佳為使用聚酯絲、耐綸絲、不鏽鋼線等的目數#80以上#600以下之範圍的網目狀薄片。又,較佳為抗靜電或導電性者。As the material of the mesh-like sheet, a material with appropriate elastic deformation is preferable, and specifically, a mesh-like sheet having a mesh number in the range of #80 to #600, such as polyester yarn, nylon yarn, and stainless steel wire, is preferably used. . Moreover, antistatic or electroconductive ones are preferable.
圖4為第1實施形態之剝離裝置的變形例之示意截面圖。如圖4所示,剝離裝置22係對上述說明的剝離裝置20追加支撐組件33之裝置。4 is a schematic cross-sectional view of a modification of the peeling device of the first embodiment. As shown in FIG. 4 , the peeling
支撐組件33係與滾筒32連結,隨著滾筒32的移動而連鎖移動。支撐組件33係以其上面成為與滾筒32的面(與高分子薄膜14的接觸面)相同高度的方式配置。The
剝離裝置22係進行與上述剝離裝置20相同的動作。但是,剝離裝置22中,由於設置有支撐組件33,所以能支撐剝離後的高分子薄膜14。因此,可防止高分子薄膜14剝離的部分大幅度下垂。The peeling
(形成有功能元件之)高分子薄膜與無機基板的剝離角度較佳為控制成1度以上30度以下。更佳為1度以上10度以下。藉由收斂在前述範圍內,能夠不對功能元件造成損傷,有效率地進行剝離。 此外,本說明書中的剝離角度係取決於篩網厚度、薄膜厚度、及滾筒的半徑。藉由因應剝離的薄膜厚度來選擇適當的篩網厚度與滾筒半徑,能將剝離角度收斂在指定範圍。 於本實施形態中,剝離後的高分子薄膜與無機基板由於未以滾筒壓著所以大致平行地分開數mm。因此,一旦剝離的高分子薄膜不會與保持著被真空吸附住的無機基板再度接觸。The peeling angle between the polymer thin film and the inorganic substrate (where the functional element is formed) is preferably controlled to be 1 degree or more and 30 degrees or less. More preferably, it is 1 degree or more and 10 degrees or less. By being within the aforementioned range, it is possible to efficiently perform peeling without causing damage to the functional element. In addition, the peel angle in this specification depends on the screen thickness, the film thickness, and the radius of the drum. By selecting the appropriate screen thickness and drum radius according to the thickness of the peeled film, the peeling angle can be converged within the specified range. In the present embodiment, since the peeled polymer film and the inorganic substrate are not pressed by a roller, they are separated by several millimeters substantially parallel to each other. Therefore, the polymer thin film that has been peeled off does not come into contact with the inorganic substrate that is still held by the vacuum suction.
以上,針對第1實施形態之步驟C(包含步驟D-1、步驟D-2、及步驟D-3之步驟C)進行說明。In the above, step C (step C including step D-1, step D-2, and step D-3) of the first embodiment has been described.
[第2實施形態]
圖5為第2實施形態之剝離裝置的示意截面圖。如圖5所示,第2實施形態之剝離裝置40具備真空吸盤34、與隔膜42。[Second Embodiment]
Fig. 5 is a schematic cross-sectional view of a peeling device according to a second embodiment. As shown in FIG. 5 , the peeling
真空吸盤34能吸附積層體10而保持,能在吸附住積層體10的狀態下使其位於隔膜42的上方。The
隔膜42為彈性薄膜,能以面推壓積層體10。具體來說,於隔膜42的下側係設置有未圖示的加壓裝置,藉由前述加壓裝置的加壓,使隔膜42(彈性薄膜)的面對積層體10推壓。如後所述,由於隔膜42為彈性薄膜,即使在高分子薄膜14上設置有功能元件18,也能沿著高分子薄膜14與功能元件18的表面幾乎均勻地推壓積層體10。此外,於本實施形態中,雖然針對使用隔膜42的情形進行說明,但只要能以面推壓積層體10則不限定於隔膜。The
第2實施形態之步驟C包含步驟E-1及步驟E-2。剝離裝置40係藉由如下所述地動作,進行步驟E-1及步驟E-2。Step C of the second embodiment includes Step E-1 and Step E-2. The peeling
首先,剝離裝置40係以真空吸盤34吸附積層體10的無機基板12側,使其位於隔膜42的上方。First, the peeling
接下來,剝離裝置40係使隔膜42動作而推壓積層體10,並使高分子薄膜14的非貼合面14a側為大氣壓力以上。此外,剝離部分18係為大氣壓力。也就是說,使非貼合面14a側為大氣壓力以上,另一方面使剝離部分18為大氣壓力(步驟E-1)。
此外,在此狀態下,由於隔膜42係將高分子薄膜14往剝離部分18方向推壓,所以不會進行剝離。Next, the peeling
接下來,剝離裝置40係藉由使剝離部分18為比非貼合面14a側的壓力更高的壓力,在高分子薄膜14的非貼合面14a與剝離部分18之間提供靜壓差(步驟E-2)。例如,預先將剝離裝置40全體配置在高壓室內,將高壓室內加壓,藉此使剝離部分18為比非貼合面14a側的壓力更高的壓力。藉此,從剝離部分18依序展開剝離,將高分子薄膜14自無機基板12剝離。
剝離裝置40中,由於使非貼合面14a側為大氣壓力以上,所以能保持剝離後的高分子薄膜14。
此外,真空吸盤34及隔膜42係相當於本發明的靜壓差形成手段。Next, the peeling
以上針對第2實施形態之步驟C(包含步驟E-1及步驟E-2之步驟C)進行說明。In the above, step C (step C including step E-1 and step E-2) of the second embodiment has been described.
於上述第1實施形態、第2實施形態中,係針對使用無機基板12與高分子薄膜14貼合而成的積層體10,將高分子薄膜14自無機基板12剝離的情形進行說明。
然而,本發明不限定於此範例,也可以使用在前述積層體的高分子薄膜上設置有功能元件之附有功能元件的積層體,將附有功能元件的高分子薄膜自無機基板剝離。此情形,取代準備積層體10之步驟A,進行準備附有功能元件的積層體11之步驟A-1即可。In the above-described first and second embodiments, the case where the polymer
圖6為顯示附有功能元件的積層體的一例之示意截面圖。如圖6所示,附有功能元件的積層體11具有積層體10(無機基板12與高分子薄膜14貼合而成的積層體)與設置在積層體10的高分子薄膜14上之功能元件16。6 is a schematic cross-sectional view showing an example of a functional element-attached laminate. As shown in FIG. 6 , the functional element-attached
在使用附有功能元件的積層體11,將附有功能元件的高分子薄膜14自無機基板12剝離的情形,較佳為使用以下說明之隔片。也就是說,在前述步驟C之前,較佳為進行步驟X:在高分子薄膜14的未設置功能元件16之面上,設置具有與功能元件16的厚度相同程度的厚度之隔片62。When the functional element-attached polymer
圖7為顯示在附有功能元件的積層體之高分子薄膜上設置隔片的情況之示意截面圖。圖7中,在高分子薄膜14的未設置功能元件16之面上,設置有具有與功能元件16的厚度相同程度的厚度之隔片62。7 is a schematic cross-sectional view showing a state in which a spacer is provided on the polymer film of the functional element-attached laminate. In FIG. 7 , on the surface of the
第1實施形態及第2實施形態中,於使用隔片62的情形,也就是在步驟C之前進行步驟X的情形,能藉由隔片62減少高分子薄膜14上的凹凸。其結果,在剝離時,能抑制在功能元件16所位於的地方對高分子薄膜14施加過度的負荷。In the first embodiment and the second embodiment, when the
在使用附有功能元件的積層體11,將附有功能元件的高分子薄膜14自無機基板12剝離的情形,亦較佳為使用以下說明之嵌入用構件。也就是說,較佳為在前述步驟C前進行步驟Y:將嵌入用構件64配置在前述高分子薄膜14上,將功能元件16嵌入於嵌入用構件64中。When the functional element-attached polymer
作為嵌入用構件64,可以是將能塑性變形的樹脂組成物塗布在硬質薄片上者,也可以是將能塑性變形的樹脂組成物貼附在硬質薄片上者。又,可以具有黏著性,嵌入用構件本身也可以具有作為功能元件的保護層的功用。The inserting
圖8為顯示在附有功能元件的積層體之高分子薄膜上配置嵌入用構件,並嵌入功能元件的情況之示意截面圖。圖8中,係將嵌入用構件64配置於高分子薄膜14上,並將功能元件16嵌入於嵌入用構件64中。在嵌入用構件64的上面(與功能元件16為相反側的面)係配置有硬質薄片66。8 is a schematic cross-sectional view showing a state in which an embedding member is arranged on a polymer film of a functional element-attached laminate, and a functional element is embedded. In FIG. 8 , the
第1實施形態及第2實施形態中,在使用嵌入用構件64的情形,也就是在步驟C之前進行步驟Y的情形,由於在藉由嵌入用構件64嵌入功能元件16之狀態下提供靜壓差,將高分子薄膜14自無機基板12剝離,所以能抑制在功能元件16所位於的地方對高分子薄膜14施加過度的負荷。In the first embodiment and the second embodiment, in the case of using the
[第3實施形態]
第3實施形態中,針對從附有功能元件的積層體11,將附有功能元件16的高分子薄膜14剝離的情形進行說明。[third embodiment]
In 3rd Embodiment, the case where the
圖9為第3實施形態之剝離裝置的示意截面圖。如圖9所示,第3實施形態之剝離裝置50具備真空室30、真空吸盤34、虛設薄膜36與多孔質柔軟體52。Fig. 9 is a schematic cross-sectional view of a peeling device according to a third embodiment. As shown in FIG. 9 , the peeling
關於真空室30、真空吸盤34、虛設薄膜36,因為已經在第1實施形態的項目中說明過,所以省略此處的說明。Since the
多孔質柔軟體52係配置在真空室30內,能於將附有功能元件的積層體11配置在上側時嵌入功能元件16。作為多孔質柔軟體52,只要是多孔質且具有柔軟性者則沒有特別限定。作為多孔質柔軟體52的材質,能使用高分子多孔質體、金屬多孔質體、陶瓷多孔質體中的任一者。作為高分子多孔質體,可使用低密度聚乙烯、高密度聚乙烯、超高密度聚乙烯、聚丙烯、聚甲基丙烯酸、聚氯乙烯、氟樹脂等。作為金屬多孔質體,可使用Cu、SUS、鈦等。作為陶瓷多孔質體,可使用氧化鋁、氮化鋁、氮化矽、氧化鋯等。The porous
第3實施形態之步驟C包含步驟F-1及步驟F-2。剝離裝置50係藉由如下所述地動作,進行步驟F-1及步驟F-2。Step C of the third embodiment includes Step F-1 and Step F-2. The peeling
首先,剝離裝置50係以真空吸盤34吸附附有功能元件的積層體11之無機基板12側,使其位於真空室30的上方。此時,以使積層體10位於虛設薄膜36的開口的方式使其位移。First, the peeling
接下來,剝離裝置50係在將功能元件16嵌入配置於真空室30內的多孔質柔軟體52的同時,藉由多孔質柔軟體52將高分子薄膜14往剝離部分18方向推壓(步驟F-1)。Next, the peeling
接下來,剝離裝置50係藉由幫浦P使真空室30內小於大氣壓力。此處,剝離部分18為大氣壓力。藉此,在高分子薄膜14之非貼合面14a與剝離部分18之間提供靜壓差。也就是說,使非貼合面14a側小於大氣壓力,另一方面使剝離部分18為大氣壓力,藉此提供靜壓差(步驟F-2)。藉此,自剝離部分18依序展開剝離,將附有功能元件16的高分子薄膜14自無機基板12剝離。Next, the peeling
剝離裝置50中,由於在將功能元件16嵌入多孔質柔軟體52的狀態下提供靜壓差,將高分子薄膜14自無機基板12剝離,所以能抑制在功能元件16所位於的地方對高分子薄膜14施加過度的負荷。
此外,真空室30及真空吸盤34係相當於本發明的靜壓差形成手段。In the
藉由前述步驟C剝離之附有功能元件16的高分子薄膜14能使用作為電子裝置,特別是可撓性電子裝置。也就是說,包含前述步驟A-1、前述步驟B、及前述步驟C之方法也是電子裝置之製造方法。The
以上針對本發明之實施形態進行說明,但本發明不限定於上述範例,在滿足本發明之構成的範圍內,能進行適度設計變更。As mentioned above, although embodiment of this invention was described, this invention is not limited to the above-mentioned example, In the range which satisfies the structure of this invention, an appropriate design change is possible.
10:積層體
11:附有功能元件的積層體
12:無機基板
14:高分子薄膜
14a:非貼合面
16:功能元件
18:剝離部分
20,22,40,50:剝離裝置
30:真空室
32:滾筒
33:支撐組件
34:真空吸盤
36:虛設薄膜
38:網目狀薄片
42:隔膜
52:多孔質柔軟體
62:隔片
64:嵌入用構件
66:硬質薄片10: Laminate
11: Laminates with functional elements
12: Inorganic substrate
14:
圖1為顯示積層體的一例之示意截面圖。 圖2為第1實施形態之剝離裝置的示意截面圖。 圖3為第1實施形態之剝離裝置的示意截面圖。 圖4為第1實施形態之剝離裝置的變形例之示意截面圖。 圖5為第2實施形態之剝離裝置的示意截面圖。 圖6為顯示附有功能元件的積層體的一例之示意截面圖。 圖7為顯示在附有功能元件的積層體之高分子薄膜上設置隔片的情況之示意截面圖。 圖8為顯示在附有功能元件的積層體之高分子薄膜上配置嵌入用構件,並嵌入功能元件的情況之示意截面圖。 圖9為第3實施形態之剝離裝置的示意截面圖。FIG. 1 is a schematic cross-sectional view showing an example of a laminated body. Fig. 2 is a schematic cross-sectional view of the peeling device according to the first embodiment. Fig. 3 is a schematic cross-sectional view of the peeling device according to the first embodiment. 4 is a schematic cross-sectional view of a modification of the peeling device of the first embodiment. Fig. 5 is a schematic cross-sectional view of a peeling device according to a second embodiment. 6 is a schematic cross-sectional view showing an example of a functional element-attached laminate. 7 is a schematic cross-sectional view showing a state in which a spacer is provided on the polymer film of the functional element-attached laminate. 8 is a schematic cross-sectional view showing a state in which an embedding member is arranged on a polymer film of a functional element-attached laminate, and a functional element is embedded. Fig. 9 is a schematic cross-sectional view of a peeling device according to a third embodiment.
12:無機基板12: Inorganic substrate
14:高分子薄膜14: Polymer film
14a:非貼合面14a: Non-bonding surface
18:剝離部分18: Peel off the part
20:剝離裝置20: Stripping device
30:真空室30: Vacuum Chamber
32:滾筒32: Roller
34:真空吸盤34: Vacuum suction cup
36:虛設薄膜(dummy film)36: dummy film
38:網目狀薄片38: Mesh flakes
Claims (10)
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JP4619462B2 (en) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | Thin film element transfer method |
JP4096695B2 (en) * | 2002-10-24 | 2008-06-04 | 東レ株式会社 | Flexible film peeling method, peeling device, and circuit board |
WO2011024689A1 (en) * | 2009-08-31 | 2011-03-03 | 旭硝子株式会社 | Peeling device |
JP6450238B2 (en) * | 2015-03-31 | 2019-01-09 | 株式会社Screenホールディングス | Peeling device |
JP2020093873A (en) * | 2018-12-11 | 2020-06-18 | 凸版印刷株式会社 | Film peeling device |
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CN115697870A (en) | 2023-02-03 |
JPWO2021260972A1 (en) | 2021-12-30 |
KR20220162792A (en) | 2022-12-08 |
JP7336087B2 (en) | 2023-08-31 |
WO2021260972A1 (en) | 2021-12-30 |
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