TW202146569A - Antistatic resin composition, manufacturing method of antistatic resin composition, and packaging material for electronic parts containing a block copolymer (b) and a donor-acceptor-based molecular compound c - Google Patents

Antistatic resin composition, manufacturing method of antistatic resin composition, and packaging material for electronic parts containing a block copolymer (b) and a donor-acceptor-based molecular compound c Download PDF

Info

Publication number
TW202146569A
TW202146569A TW110114124A TW110114124A TW202146569A TW 202146569 A TW202146569 A TW 202146569A TW 110114124 A TW110114124 A TW 110114124A TW 110114124 A TW110114124 A TW 110114124A TW 202146569 A TW202146569 A TW 202146569A
Authority
TW
Taiwan
Prior art keywords
mass
component
mentioned
less
block copolymer
Prior art date
Application number
TW110114124A
Other languages
Chinese (zh)
Other versions
TWI793575B (en
Inventor
佐藤尚彦
Original Assignee
日商旭化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商旭化成股份有限公司 filed Critical 日商旭化成股份有限公司
Publication of TW202146569A publication Critical patent/TW202146569A/en
Application granted granted Critical
Publication of TWI793575B publication Critical patent/TWI793575B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/55Boron-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0091Complexes with metal-heteroatom-bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/15Heterocyclic compounds having oxygen in the ring
    • C08K5/156Heterocyclic compounds having oxygen in the ring having two oxygen atoms in the ring
    • C08K5/1565Five-membered rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02Homopolymers or copolymers of hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02Homopolymers or copolymers of hydrocarbons
    • C08L25/04Homopolymers or copolymers of styrene
    • C08L25/08Copolymers of styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/06Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to homopolymers or copolymers of aliphatic hydrocarbons containing only one carbon-to-carbon double bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00Processes of treating or compounding macromolecular substances
    • C08J3/20Compounding polymers with additives, e.g. colouring
    • C08J3/22Compounding polymers with additives, e.g. colouring using masterbatch techniques
    • C08J3/226Compounding polymers with additives, e.g. colouring using masterbatch techniques using a polymer as a carrier
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/017Additives being an antistatic agent
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00Properties
    • C08L2201/04Antistatic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00Properties
    • C08L2201/10Transparent films; Clear coatings; Transparent materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2310/00Masterbatches
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/66Substances characterised by their function in the composition
    • C08L2666/86Antistatics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Packaging Frangible Articles (AREA)
  • Graft Or Block Polymers (AREA)
  • Packages (AREA)

Abstract

This invention provides an antistatic resin composition with excellent antistatic properties and excellent transparency. This invention relates to an antistatic resin composition which contains a block copolymer (b) and a donor-acceptor-based molecular compound (c), and the block copolymer (b) is a block copolymer containing 30 to 90% by mass of vinyl aromatic hydrocarbon monomer units and 70 to 10% by mass of conjugated diene monomer units, and has a polymer block mainly composed of vinyl aromatic hydrocarbon monomer units. When the total amount of the block copolymer (b) and the donor-acceptor-based molecular compound (c) is 100% by mass, the content of the donor-acceptor-based molecular compound (c) is more than 0.5 mass% and less than 5 mass%.

Description

抗靜電性樹脂組合物、抗靜電性樹脂組合物之製造方法、及電子零件包裝材Antistatic resin composition, method for producing antistatic resin composition, and packaging material for electronic parts

本發明係關於一種抗靜電性樹脂組合物、抗靜電性樹脂組合物之製造方法、及電子零件包裝材。The present invention relates to an antistatic resin composition, a method for producing the antistatic resin composition, and a packaging material for electronic parts.

通常,乙烯基芳香族烴系樹脂(例如苯乙烯系樹脂)之成形加工性、剛性、透明性等優異,並且價格便宜且比重較低,經濟上亦優異,因此,由乙烯基芳香族烴系樹脂成形之成形品作為射出成形品、或自T模擠出之片狀成形品、或自異形模具擠出之圓形或方形之管型異形擠出成形品等,廣泛用於各種領域。In general, vinyl aromatic hydrocarbon-based resins (eg, styrene-based resins) are excellent in moldability, rigidity, transparency, etc., are inexpensive, have a low specific gravity, and are also economically excellent. Therefore, vinyl aromatic hydrocarbon-based resins are Resin-molded molded articles are widely used in various fields as injection molded articles, sheet-like molded articles extruded from T-die, or round or square tubular shaped extrusion molded articles extruded from special-shaped dies.

其中,用以於電子機器中安裝、捆包積體電路(IC)或大規模積體電路(LSI)等電子零件之載帶,或用以安裝、捆包連接器以及各種半導體零件之料管(亦稱為料條(magazine stick)),及用以捆包液晶面板等之搬送用托盤等各種電子零件包裝材中通常廣泛使用有:包含耐衝擊聚苯乙烯或透明MBS樹脂(甲基丙烯酸甲酯/丁二烯/苯乙烯共聚樹脂)等乙烯基芳香族烴系樹脂之片狀成形品或管狀擠出成形品。 上述載帶或料管、搬送用托盤等電子零件包裝材根據其使用形態,要求具有多方面之特性,例如除要求剛性、耐衝擊性等力學物性外,亦要求可實現於狹縫加工時不產生毛邊、或於真空成形時獲得無厚薄不均之均勻厚度之成形加工性,或者透明性(視認性),進而用以防止因靜電所導致之電子零件之故障或破壞之抗靜電性等,為應對該等要求,進行有各種改良研究以提高該等特性,獲得更良好之物性平衡。Among them, carrier tapes used to mount and package electronic components such as integrated circuits (ICs) or large-scale integrated circuits (LSIs) in electronic machines, or tubes used to mount and package connectors and various semiconductor components (also known as magazine stick), and various electronic parts packaging materials such as transport trays for packaging liquid crystal panels, etc. are generally widely used: containing impact-resistant polystyrene or transparent MBS resin (methacrylic acid Sheet-shaped moldings or tubular extrusion moldings of vinyl aromatic hydrocarbon resins such as methyl ester/butadiene/styrene copolymer resin). The above-mentioned electronic parts packaging materials such as carrier tapes, tubes, and conveying trays are required to have various characteristics according to their use forms. It produces burrs, or obtains the formability of uniform thickness without uneven thickness during vacuum forming, or transparency (visibility), which is used to prevent malfunction or destruction of electronic parts caused by static electricity. Antistatic properties, etc., In response to these requirements, various improvement studies have been carried out to improve these properties and obtain a better balance of physical properties.

尤其作為以乙烯基芳香族烴系樹脂為基材之抗靜電性材料,先前已廣泛知曉於苯乙烯系樹脂中調配有科琴黑等導電性碳之組合物。 先前提出之於苯乙烯系樹脂中調配有導電性碳之苯乙烯系抗靜電性材料展現105 Ω/□左右之表面電阻率,表現出有些電子零件之種類中不可或缺之極低表面電阻率,但有些電子零件並非一定需要如此低之表面電阻率,亦存在大量表面電阻率為1010 Ω/□左右即足夠之電子零件。 另一方面,作為調配有導電性碳之抗靜電性材料之缺點,存在如下問題:成形品之顏色較黑,不透明,故而視認性較差,難以於包裝之狀態下確認內容物。又,亦指出如下有可能引起污染之問題,即,將電子零件安裝於成形之電子零件包裝材並實際搬送時,因搬送時之振動所導致之電子零件與包裝材之接觸部分之摩擦,而導致導電性碳脫落,脫落之導電性碳附著於電子零件等。In particular, as an antistatic material based on a vinyl aromatic hydrocarbon resin, a composition in which conductive carbon such as Ketjen black is blended with a styrene resin has been widely known. The previously proposed styrene-based antistatic material prepared with conductive carbon in a styrene-based resin exhibits a surface resistivity of about 10 5 Ω/□, which shows an extremely low surface resistance that is indispensable in some types of electronic parts However, some electronic components do not necessarily require such a low surface resistivity, and there are also a large number of electronic components with a surface resistivity of about 10 10 Ω/□. On the other hand, as a disadvantage of the antistatic material prepared with conductive carbon, there is a problem that the color of the molded product is dark and opaque, so the visibility is poor, and it is difficult to confirm the contents in the state of the package. In addition, it is also pointed out that there is a possibility of causing contamination as follows, that is, when the electronic parts are mounted on the formed electronic parts packaging material and actually conveyed, the friction of the contact part between the electronic parts and the packaging material caused by the vibration during conveyance, and Causes the conductive carbon to fall off, and the falling off conductive carbon adheres to electronic parts, etc.

另一方面,先前亦進行有關於不使用導電性碳而表現抗靜電性能之樹脂組合物之技術開發。 例如,提出有關於在苯乙烯系樹脂等熱塑性樹脂中摻合有具有聚氧伸烷基鏈之高分子型導電性聚合物之樹脂組合物的技術(例如,參考專利文獻1)。 然而,通常高分子型導電性聚合物之折射率低於作為基材樹脂之苯乙烯系樹脂,包含調配有高分子型導電性聚合物之樹脂組合物之電子零件包裝材由於其等之折射率之背離較大,故而存在產生白濁,視認性受損之問題。進而,為表現抗靜電性,通常必須以10%以上之含量調配大量高分子型導電性聚合物,故而亦存在因該聚合物之結構而導致彈性模數較低,樹脂組合物之剛性下降等樹脂組合物之力學特性產生較大變化之問題。On the other hand, the technical development of a resin composition that exhibits antistatic properties without using conductive carbon has also been performed previously. For example, there is proposed a technique for a resin composition in which a polymer-type conductive polymer having a polyoxyalkylene chain is blended with a thermoplastic resin such as a styrene-based resin (for example, refer to Patent Document 1). However, the refractive index of the high-molecular conductive polymer is generally lower than that of the styrene-based resin as the base resin, and the packaging materials for electronic parts including the resin composition prepared with the high-molecular conductive polymer are due to the same refractive index. The deviation is large, so there is a problem of white turbidity and impaired visibility. Furthermore, in order to exhibit antistatic properties, it is usually necessary to prepare a large amount of high-molecular type conductive polymer at a content of more than 10%. Therefore, due to the structure of the polymer, the elastic modulus is low, and the rigidity of the resin composition decreases. There is a problem that the mechanical properties of the resin composition vary greatly.

又,作為用以獲得抗靜電性樹脂組合物之方法,先前亦已知於熱塑性樹脂中添加作為通用之抗靜電劑之界面活性劑之方法。 然而,界面活性劑型之抗靜電劑係藉由滲出至成形品之表面而表現性能,故而存在若以水擦拭成形品之表面則抗靜電性能暫時下降,表面電阻率上升等抗靜電性能穩定性之課題。進而,抗靜電劑本身會滲出至成形品表面,故而亦擔憂附著於作為內容物之電子零件而產生污染,不適於電子零件包裝材用途。Furthermore, as a method for obtaining an antistatic resin composition, a method of adding a surfactant as a general antistatic agent to a thermoplastic resin is also known. However, the antistatic agent of surfactant type exhibits its performance by exuding to the surface of the molded product, so if the surface of the molded product is wiped with water, the antistatic property temporarily decreases, and the surface resistivity increases. subject. Furthermore, since the antistatic agent itself oozes out to the surface of the molded product, there is a concern that it will adhere to the electronic parts as the contents and cause contamination, which is not suitable for the use of electronic parts packaging materials.

因此近年來,提出一種使用包含有機硼化合物與含氮之化合物之供體-受體系分子化合物作為新型抗靜電劑,並將其添加至熱塑性樹脂而得之抗靜電性樹脂組合物(例如參考專利文獻2、非專利文獻1)。 該抗靜電劑係引入分子化合物之概念者。該抗靜電性樹脂組合物與先前之滲出至成形品表面而發揮抗靜電效果之界面活性劑型不同,其藉由組合電子供體與受體而瞬間進行電荷之交換,藉此使帶電之電荷瞬間衰減,從而表現抗靜電效果。 [先前技術文獻] [專利文獻]Therefore, in recent years, an antistatic resin composition obtained by using a donor-acceptor molecular compound containing an organoboron compound and a nitrogen-containing compound as a novel antistatic agent and adding it to a thermoplastic resin has been proposed (for example, refer to patent Document 2, Non-Patent Document 1). The antistatic agent is introduced into the concept of molecular compound. The antistatic resin composition is different from the previous surfactant type that exudes to the surface of the molded product and exerts an antistatic effect. By combining the electron donor and the acceptor, the charge is exchanged instantaneously, thereby making the charged charge instantaneously Attenuation, thus showing antistatic effect. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2011-6604號公報 [專利文獻2]日本專利第5734491號公報 [非專利文獻][Patent Document 1] Japanese Patent Laid-Open No. 2011-6604 [Patent Document 2] Japanese Patent No. 5734491 [Non-patent literature]

[非專利文獻1]雜誌「塑膠時代(Plastics age)」2018年4月刊 第47~52頁[Non-Patent Document 1] Magazine "Plastics age" April 2018 pp. 47-52

[發明所欲解決之問題][Problems to be Solved by Invention]

然而,上述使用有包含有機硼化合物與含氮之化合物之供體-受體系分子化合物之抗靜電性樹脂組合物亦存在課題。 表現抗靜電性能之樹脂限定於:PE(Polyethylene,聚乙烯)或PP(Polypropylene,聚丙烯)、環狀聚烯烴等所謂具有結晶性之聚烯烴樹脂,或者聚醯胺、PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)樹脂、ABS(acrylonitrile-butadiene-styrene,丙烯腈-丁二烯-苯乙烯)樹脂、聚氯乙烯或聚縮醛等烴以外之於高分子骨架內含有一定濃度以上之雜原子之所謂極性樹脂。即具有如下問題:即使於通用聚苯乙烯(亦稱為GPPS)或橡膠改性聚苯乙烯(亦稱為HIPS)或甲基丙烯酸甲酯含量為20質量%左右之甲基丙烯酸甲酯/苯乙烯共聚樹脂(亦稱為MS樹脂)中,調配例如4質量%左右之通常認為是充分量之上述供體-受體系分子化合物,亦無法獲得降低表面電阻率之效果,無法表現抗靜電性能。However, the above-mentioned antistatic resin composition using a donor-acceptor molecular compound containing an organoboron compound and a nitrogen-containing compound also has a problem. Resins exhibiting antistatic properties are limited to: PE (Polyethylene, polyethylene) or PP (Polypropylene, polypropylene), so-called crystalline polyolefin resins such as cyclic polyolefins, or polyamides, PET (polyethylene terephthalate, polyolefin resins) Ethylene terephthalate) resin, ABS (acrylonitrile-butadiene-styrene, acrylonitrile-butadiene-styrene) resin, polyvinyl chloride, polyacetal and other hydrocarbons other than hydrocarbons containing more than a certain concentration in the polymer backbone The heteroatom of the so-called polar resin. That is, there is the following problem: even for general-purpose polystyrene (also known as GPPS) or rubber-modified polystyrene (also known as HIPS) or methyl methacrylate/benzene with a methyl methacrylate content of about 20% by mass In the ethylene copolymer resin (also called MS resin), for example, about 4% by mass of the above-mentioned donor-acceptor system molecular compound, which is generally considered to be a sufficient amount, cannot obtain the effect of reducing the surface resistivity, and cannot exhibit antistatic properties.

因此本發明係鑒於上述先前技術之問題,其目的在於提供一種表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物及其製造方法,上述抗靜電性樹脂組合物即使於使用通用聚苯乙烯(GPPS)或含有接枝橡膠粒子之橡膠改性聚苯乙烯(HIPS)或苯乙烯丙烯酸系共聚樹脂等苯乙烯系樹脂作為基材樹脂之情形時,亦可於調配有上述供體-受體系分子化合物之樹脂組合物中,引發出供體-受體系分子化合物原本之特性。 [解決問題之技術手段]Therefore, in view of the above-mentioned problems of the prior art, the present invention aims to provide an antistatic resin composition that exhibits excellent antistatic properties and excellent transparency and a method for producing the same, and the antistatic resin composition can be used for general-purpose use. When polystyrene (GPPS), rubber-modified polystyrene (HIPS) containing grafted rubber particles, or styrene-based resin such as styrene-acrylic copolymer resin is used as the base resin, the above-mentioned donors can also be prepared. -In the resin composition of the acceptor molecular compound, the original properties of the donor-acceptor molecular compound are brought out. [Technical means to solve problems]

本發明者進行潛心研究,結果發現藉由組合供體-受體系分子化合物與特定之嵌段共聚物且使組成最佳化,可獲得可表現優異之抗靜電性能及透明性之抗靜電性樹脂組合物,從而完成本發明。 即,本發明如下所述。The inventors of the present invention conducted intensive research and found that by combining a donor-acceptor molecular compound with a specific block copolymer and optimizing the composition, an antistatic resin that can exhibit excellent antistatic properties and transparency can be obtained. composition, thereby completing the present invention. That is, the present invention is as follows.

[1] 一種抗靜電性樹脂組合物,其係含有 嵌段共聚物(b)、及 供體-受體系分子化合物(c)者,並且 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%, 將上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下。 [2] 如上述[1]之抗靜電性樹脂組合物,其表面電阻率為1×1012 Ω/□以下。 [3] 一種抗靜電性樹脂組合物,其係含有 乙烯基芳香族烴系樹脂(a)、 嵌段共聚物(b)、及 供體-受體系分子化合物(c)者,並且 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%, 將上述乙烯基芳香族烴系樹脂(a)及上述嵌段共聚物(b)之合計量設為100質量%時,上述乙烯基芳香族烴系樹脂(a)之質量比為81質量%以下,上述嵌段共聚物(b)之質量比為19質量%以上且未達100質量%, 將上述乙烯基芳香族烴系樹脂(a)、上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下, 表面電阻率為1×1012 Ω/□以下。 [4] 如上述[3]之抗靜電性樹脂組合物,其中上述乙烯基芳香族烴系樹脂(a)係選自由 乙烯基芳香族烴單體之均聚物(a1)、 乙烯基芳香族烴單體之接枝共聚物(a2)、及 乙烯基芳香族烴單體單元與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物(a3)所組成之群中之任一者。 [5] 如上述[3]或[4]之抗靜電性樹脂組合物,其中於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中, 上述乙烯基芳香族烴系樹脂(a)之MFR(以下,記為MFRa)與上述嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足 下述(i)~(iv)之任一條件; <條件(i)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過0質量%且30質量%以下,上述(b)成分為70質量%以上且未達100質量%之情形時, 無論MFRa與MFRb之數值如何,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分均為0.5質量%以上5質量%以下; <條件(ii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過30質量%且50質量%以下,上述(b)成分為未達70質量%且50質量%以上之情形時,當為 MFRa<MFRb・・(式1) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.5質量%以上5質量%以下,當為 MFRa≧MFRb・・(式2) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過50質量%且70質量%以下,上述(b)成分為未達50質量%且30質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iv)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過70質量%且81質量%以下,上述(b)成分為未達30質量%且19質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。 [6] 如上述[4]之抗靜電性樹脂組合物,其中於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中, 上述乙烯基芳香族烴系樹脂(a3)之MFR(以下,記為MFRa)與上述嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足 下述(v)或(vi)之條件; <條件(v)> 於將上述(a3)成分及上述(b)成分之合計設為100質量%時,上述(a3)成分為超過0質量%且20質量%以下,上述(b)成分為80質量%以上且未達100質量%之情形時,無論MFRa與MFRb之數值如何, 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,(c)均為0.5質量%以上5質量%以下; <條件(vi)> 於將上述(a3)成分及上述(b)成分之合計設為100質量%時,上述(a3)成分為超過20質量%且50質量%以下,上述(b)成分為未達80質量%且50質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。 [7] 如上述[1]至[6]中任一項之抗靜電性樹脂組合物,其中上述供體-受體系分子化合物(c)係由下述通式(1)所表示;[1] An antistatic resin composition containing a block copolymer (b) and a donor-acceptor molecular compound (c), wherein the block copolymer (b) contains a vinyl aromatic A block copolymer of a hydrocarbon monomer unit and a conjugated diene monomer unit, having a polymer block mainly composed of a vinyl aromatic hydrocarbon monomer unit, and the vinyl aromatic hydrocarbon monomer unit is 30 to 90% by mass , the conjugated diene monomer unit is 70 to 10% by mass, and the total amount of the above-mentioned block copolymer (b) and the above-mentioned donor-acceptor system molecular compound (c) is 100% by mass, the above-mentioned donor- The content of the acceptor molecular compound (c) is 0.5 mass % or more and 5 mass % or less. [2] The antistatic resin composition according to the above [1], which has a surface resistivity of 1×10 12 Ω/□ or less. [3] An antistatic resin composition comprising a vinyl aromatic hydrocarbon resin (a), a block copolymer (b), and a donor-acceptor molecular compound (c), wherein the block Copolymer (b) is a block copolymer containing vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, and has a polymer block with vinyl aromatic hydrocarbon monomer units as the main body, vinyl aromatic hydrocarbon monomer units. 30 to 90 mass % of the aliphatic hydrocarbon monomer unit, 70 to 10 mass % of the conjugated diene monomer unit, and the total amount of the above vinyl aromatic hydrocarbon resin (a) and the above block copolymer (b) At 100 mass %, the mass ratio of the vinyl aromatic hydrocarbon resin (a) is 81 mass % or less, and the mass ratio of the block copolymer (b) is 19 mass % or more and less than 100 mass %, When the total amount of the vinyl aromatic hydrocarbon resin (a), the block copolymer (b), and the donor-acceptor molecular compound (c) is 100% by mass, the donor-acceptor molecule The content of the compound (c) is 0.5 mass % or more and 5 mass % or less, and the surface resistivity is 1×10 12 Ω/□ or less. [4] The antistatic resin composition according to the above [3], wherein the vinyl aromatic hydrocarbon resin (a) is selected from the group consisting of homopolymers (a1) of vinyl aromatic hydrocarbon monomers, vinyl aromatic hydrocarbons Graft copolymers of hydrocarbon monomers (a2) and random copolymers (a3) of vinyl aromatic hydrocarbon monomer units and (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer units any one of the group formed. [5] The antistatic resin composition according to the above [3] or [4], wherein in the melt flow rate (MFR) under the conditions of 200° C. and 5 kg load specified in ISO1133, the above vinyl aromatic hydrocarbon is The relationship between the MFR (hereinafter, referred to as MFRa) of the resin (a) and the MFR (hereinafter, referred to as MFRb) of the above-mentioned block copolymer (b) satisfies any one of the following conditions (i) to (iv); (i)> When the sum of said (a) component and said (b) component is made into 100 mass %, said (a) component is more than 0 mass % and 30 mass % or less, and said (b) component is 70 mass % % or more and less than 100 mass %, regardless of the numerical value of MFRa and MFRb, when the sum of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is 100 mass %, the above-mentioned (c) ) components are 0.5 mass % or more and 5 mass % or less; <Condition (ii)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is 100 mass %, the above-mentioned (a) component is more than 30 mass % % and 50 mass % or less, when the above-mentioned (b) component is less than 70 mass % and 50 mass % or more, when the relationship of MFRa<MFRb・・(Formula 1), the above-mentioned (a) component, the above-mentioned When the total of the component (b) and the component (c) above is 100% by mass, the component (c) above is 0.5% by mass or more and 5% by mass or less, and in the relationship of MFRa≧MFRb・・(Formula 2), When the sum of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is set to 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less; When the total of the component (a) and the component (b) above is 100% by mass, the component (a) is more than 50% by mass and 70% by mass or less, and the component (b) is less than 50% by mass and 30% by mass In the case of the above, the relationship of MFRa<MFRb・・(Formula 1) is satisfied, and when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100% by mass, the above-mentioned (c) component It is 0.9 mass % or more and 5 mass % or less; <Condition (iv)> When the sum of said (a) component and said (b) component is made into 100 mass %, said (a) component is more than 70 mass % and 81 mass % or less, when the above-mentioned (b) component is less than 30 mass % and 19 mass % or more, the relationship of MFRa<MFRb・・(Formula 1) is satisfied, and the above-mentioned (a) component, above-mentioned (b) component and When the total of the said (c) component is 100 mass %, the said (c) component is 3 mass % or more and 5 mass % or less. [6] The antistatic resin composition according to the above [4], wherein in the melt flow rate (MFR) under the conditions of 200° C. and 5 kg load specified in ISO1133, the above vinyl aromatic hydrocarbon resin (a3) The relationship between the MFR (hereinafter, referred to as MFRa) and the MFR (hereinafter, referred to as MFRb) of the above-mentioned block copolymer (b) satisfies the following conditions (v) or (vi); When the sum of the said (a3) component and the said (b) component is 100 mass %, the said (a3) component is more than 0 mass % and 20 mass % or less, and the said (b) component is 80 mass % or more and less than 100 mass % In the case of mass %, irrespective of the numerical value of MFRa and MFRb, when the total of the above-mentioned (a3) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, (c) is 0.5 mass % or more. 5 mass % or less; <Condition (vi)> When the sum of the above-mentioned (a3) component and the above-mentioned (b) component is 100 mass %, the above-mentioned (a3) component is more than 20 mass % and 50 mass % or less, and the above When the component (b) is less than 80% by mass and 50% by mass or more, MFRa<MFRb is satisfied. (Formula 1) When it is 100 mass %, the said (c) component is 3 mass % or more and 5 mass % or less. [7] The antistatic resin composition according to any one of the above [1] to [6], wherein the above-mentioned donor-acceptor molecular compound (c) is represented by the following general formula (1);

[化1]

Figure 02_image001
[hua 1]
Figure 02_image001

(式(1)中,R1 、R2 分別獨立為CH3 (CH2 )n -CO-OCH2 (n為12~22之整數)或HOCH2 ,且至少一者為CH3 (CH2 )n -CO-OCH3 (n為12~22之整數); R3 、R4 分別獨立為選自由CH3 、C2 H5 、HOCH2 、HOC2 H4 及HOCH2 CH(CH3 )所組成之群中之任一者; 此處,通式(1)中之「δ+」表示於分子內之共價鍵中存在極性,(+)表示氧原子之供電子性變強,(-)表示硼原子之吸電子性變強,「→」表示電子被拉近之路徑,「---」表示原子間鍵結力被削弱之狀態)。(In formula (1), R 1 and R 2 are independently CH 3 (CH 2 ) n -CO-OCH 2 (n is an integer of 12 to 22) or HOCH 2 , and at least one of them is CH 3 (CH 2 ) ) n -CO-OCH 3 (n is an integer from 12 to 22); R 3 and R 4 are independently selected from CH 3 , C 2 H 5 , HOCH 2 , HOC 2 H 4 and HOCH 2 CH(CH 3 ) Any one of the group formed; Here, "δ+" in the general formula (1) means that there is polarity in the covalent bond in the molecule, (+) means that the electron donating property of the oxygen atom becomes stronger, ( -) indicates that the electron-withdrawing property of the boron atom becomes stronger, "→" indicates the path of electrons being drawn closer, and "---" indicates the state where the bonding force between atoms is weakened).

[8] 一種如上述[1]至[7]中任一項之抗靜電性樹脂組合物之製造方法,該方法包括: 步驟(I),即,使用嵌段共聚物(b)及供體-受體系分子化合物(c),以將母料總量設為100質量%時供體-受體系分子化合物(c)為5質量%以上20質量%以下之組成比率進行熔融混練,藉此製造母料;及 步驟(II),即,藉由將上述母料與乙烯基芳香族烴系樹脂(a)及/或嵌段共聚物(b)混練而稀釋母料。 [9] 一種電子零件包裝材,其係如上述[1]至[7]中任一項之抗靜電性樹脂組合物之成形體。 [發明之效果][8] A method for producing the antistatic resin composition according to any one of the above [1] to [7], the method comprising: Step (I), that is, using the block copolymer (b) and the molecular compound of the donor-acceptor system (c), the molecular compound of the donor-acceptor system (c) when the total amount of the master batch is set at 100% by mass is: The composition ratio of 5 mass % or more and 20 mass % or less is melt-kneaded to produce a master batch; and Step (II), that is, diluting the master batch by kneading the above master batch with the vinyl aromatic hydrocarbon resin (a) and/or the block copolymer (b). [9] An electronic component packaging material, which is a molded body of the antistatic resin composition according to any one of the above [1] to [7]. [Effect of invention]

根據本發明,可提供一種抗靜電性樹脂組合物、該抗靜電性樹脂組合物之製造方法及電子零件包裝材,上述抗靜電性樹脂組合物即使於與通用聚苯乙烯(GPPS)或橡膠改性聚苯乙烯(HIPS)、甲基丙烯酸甲酯/苯乙烯共聚樹脂(MS樹脂)等苯乙烯系樹脂組合之情形時,亦表現優異之抗靜電性能且透明性亦優異。According to the present invention, there can be provided an antistatic resin composition, a method for producing the antistatic resin composition, and a packaging material for electronic parts, wherein the antistatic resin composition can be modified even with general-purpose polystyrene (GPPS) or rubber. When combined with styrene resins such as polystyrene (HIPS), methyl methacrylate/styrene copolymer resin (MS resin), etc., it also exhibits excellent antistatic properties and excellent transparency.

以下,詳細說明本發明之實施方式(以下,稱為「本實施方式」)。 再者,以下之本實施方式係用以說明本發明之例示,並不意味著將本發明限定於以下內容,本發明可於其主旨之範圍內進行各種變化而實施。Hereinafter, an embodiment of the present invention (hereinafter, referred to as "the present embodiment") will be described in detail. In addition, the following present embodiment is an example for explaining the present invention, and does not mean that the present invention is limited to the following contents, and the present invention can be implemented with various changes within the scope of the gist.

[抗靜電性樹脂組合物] (第一抗靜電性樹脂組合物) 本實施方式之第一抗靜電性樹脂組合物係含有嵌段共聚物(b)及供體-受體系分子化合物(c)之抗靜電性樹脂組合物。 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%。 又,將上述嵌段共聚物(b)及供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下。[Antistatic resin composition] (First antistatic resin composition) The first antistatic resin composition of the present embodiment is an antistatic resin composition containing the block copolymer (b) and the donor-acceptor molecular compound (c). The above-mentioned block copolymer (b) is a block copolymer containing vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, and has a polymer block mainly composed of vinyl aromatic hydrocarbon monomer units, The vinyl aromatic hydrocarbon monomer unit is 30 to 90 mass %, and the conjugated diene monomer unit is 70 to 10 mass %. Further, when the total amount of the block copolymer (b) and the donor-acceptor molecular compound (c) is 100 mass %, the content of the donor-acceptor molecular compound (c) is 0.5 mass % or more 5 mass % or less.

藉由具有上述構成,即使於與通用聚苯乙烯(GPPS)或橡膠改性聚苯乙烯(HIPS)、甲基丙烯酸甲酯/苯乙烯共聚樹脂(MS樹脂)等苯乙烯系樹脂組合之情形時,亦可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。By having the above configuration, even when combined with styrene resins such as general-purpose polystyrene (GPPS), rubber-modified polystyrene (HIPS), methyl methacrylate/styrene copolymer resin (MS resin), etc. , an antistatic resin composition with excellent antistatic performance and excellent transparency can also be obtained.

本實施方式之第一抗靜電性樹脂組合物較佳為表面電阻率為1×1012 Ω/□以下。 藉此,可發揮優異之抗靜電性能。 第一抗靜電性樹脂組合物之表面電阻率較佳為5×1011 Ω/□以下,更佳為5×1010 Ω/□以下。 抗靜電性樹脂組合物之表面電阻率可藉由下述實施例中記載之方法而測定。 第一抗靜電性樹脂組合物之表面電阻率可藉由使上述嵌段共聚物(b)之聚合物結構最佳化,以及適量調配供體-受體系分子化合物(c)來控制為上述數值範圍。 原本表面電阻率並無下限值,認為越低,性能越佳。但表面電阻率之減低與成本成正比,故而實際中較佳為設計為1×108 Ω/□~1×109 Ω/□作為下限。The first antistatic resin composition of the present embodiment preferably has a surface resistivity of 1×10 12 Ω/□ or less. Thereby, excellent antistatic properties can be exerted. The surface resistivity of the first antistatic resin composition is preferably 5×10 11 Ω/□ or less, more preferably 5×10 10 Ω/□ or less. The surface resistivity of the antistatic resin composition can be measured by the method described in the following examples. The surface resistivity of the first antistatic resin composition can be controlled to the above-mentioned value by optimizing the polymer structure of the above-mentioned block copolymer (b) and formulating an appropriate amount of the donor-acceptor system molecular compound (c). Scope. Originally, there is no lower limit of surface resistivity, and it is considered that the lower the surface resistivity, the better the performance. However, the reduction of the surface resistivity is proportional to the cost, so in practice, it is preferable to design 1×10 8 Ω/□ to 1×10 9 Ω/□ as the lower limit.

(第二抗靜電性樹脂組合物) 本實施方式之第二抗靜電性樹脂組合物係含有 乙烯基芳香族烴系樹脂(a)、 嵌段共聚物(b)、及 供體-受體系分子化合物(c)之抗靜電性樹脂組合物。 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%。 將上述乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計量設為100質量%時,上述乙烯基芳香族烴系樹脂(a)之質量比為81質量%以下,上述嵌段共聚物(b)之質量比為19質量%以上且未達100質量%。 又,將上述乙烯基芳香族烴系樹脂(a)、上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物之含量為0.5質量%以上5質量%以下。 進而,第二抗靜電性樹脂組合物之表面電阻率為1×1012 Ω/□以下。(Second Antistatic Resin Composition) The second antistatic resin composition of the present embodiment contains vinyl aromatic hydrocarbon resin (a), block copolymer (b), and donor-acceptor system molecules The antistatic resin composition of compound (c). The above-mentioned block copolymer (b) is a block copolymer containing vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, and has a polymer block mainly composed of vinyl aromatic hydrocarbon monomer units, The vinyl aromatic hydrocarbon monomer unit is 30 to 90 mass %, and the conjugated diene monomer unit is 70 to 10 mass %. When the total amount of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is 100 mass %, the mass ratio of the vinyl aromatic hydrocarbon resin (a) is 81 mass % or less, The mass ratio of the said block copolymer (b) is 19 mass % or more and less than 100 mass %. Furthermore, when the total amount of the vinyl aromatic hydrocarbon resin (a), the block copolymer (b), and the donor-acceptor molecular compound (c) is 100% by mass, the donor-acceptor The content of the system molecular compound is 0.5 mass % or more and 5 mass % or less. Furthermore, the surface resistivity of the second antistatic resin composition is 1×10 12 Ω/□ or less.

藉由具有上述構成,可獲得表現優異之抗靜電性能且透明性亦優異之作為各種苯乙烯系樹脂組合物之抗靜電性樹脂組合物。By having the above-mentioned constitution, it is possible to obtain antistatic resin compositions as various styrene-based resin compositions that exhibit excellent antistatic performance and are also excellent in transparency.

本實施方式之第二抗靜電性樹脂組合物之表面電阻率為1×1012 Ω/□以下。 藉此,可發揮優異之抗靜電性能。 第二抗靜電性樹脂組合物之表面電阻率更佳為5×1011 Ω/□以下,進而較佳為5×1010 Ω/□以下。 抗靜電性樹脂組合物之表面電阻率可藉由下述實施例中記載之方法而測定。 第二抗靜電性樹脂組合物之表面電阻率可藉由使上述嵌段共聚物(b)之組成比率與聚合物結構最佳化,以及適量調配供體-受體系分子化合物(c)來控制為上述數值範圍。The surface resistivity of the second antistatic resin composition of the present embodiment is 1×10 12 Ω/□ or less. Thereby, excellent antistatic properties can be exerted. The surface resistivity of the second antistatic resin composition is more preferably 5×10 11 Ω/□ or less, and still more preferably 5×10 10 Ω/□ or less. The surface resistivity of the antistatic resin composition can be measured by the method described in the following examples. The surface resistivity of the second antistatic resin composition can be controlled by optimizing the composition ratio and polymer structure of the above-mentioned block copolymer (b), and by formulating an appropriate amount of the donor-acceptor system molecular compound (c). is the above numerical range.

上述第二抗靜電性樹脂組合物之較佳態樣如下所示。 上述第二抗靜電性樹脂組合物較佳為於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中,上述乙烯基芳香族烴系樹脂(a)之MFR(以下,記為MFRa)與嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足下述(i)~(iv)之任一條件。The preferable aspect of the said 2nd antistatic resin composition is shown below. The above-mentioned second antistatic resin composition preferably has the MFR of the above-mentioned vinyl aromatic hydrocarbon-based resin (a) in the melt flow rate (MFR) under the conditions of 200° C. and 5 kg load specified in ISO1133 (below, The relationship between the MFR (hereinafter referred to as MFRa) and the block copolymer (b) (hereinafter, referred to as MFRb) satisfies any one of the following conditions (i) to (iv).

<條件(i)> 於將上述乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量%時,(a)成分為超過0質量%且30質量%以下,上述(b)成分為70質量%以上且未達100質量%之情形時,無論MFRa與MFRb之數值如何,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述供體-受體系分子化合物(c)為0.5質量%以上5質量%以下。<Condition (i)> When the sum of the above-mentioned vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is 100% by mass, the component (a) is more than 0% by mass and not more than 30% by mass, and the component (b) above is When it is 70 mass % or more and less than 100 mass %, regardless of the numerical value of MFRa and MFRb, when the sum of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is set to 100 mass %, The said donor-acceptor system molecular compound (c) is 0.5 mass % or more and 5 mass % or less.

藉由滿足上述條件(i),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,嵌段共聚物(b)之組成比率較高,故而可獲得富有柔軟性,具有優異之衝擊強度之效果。 條件(i)中,上述供體-受體系分子化合物(c)之含量較佳為1~5質量,更佳為2~4質量%。By satisfying the above-mentioned condition (i), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. Moreover, since the composition ratio of the block copolymer (b) is high, the effect of being rich in flexibility and having an excellent impact strength can be obtained. In the condition (i), the content of the donor-acceptor system molecular compound (c) is preferably 1 to 5 mass %, more preferably 2 to 4 mass %.

<條件(ii)> 於將上述乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量%時,上述(a)成分為超過30質量%且50質量%以下,上述(b)成分為未達70質量%且50質量%以上之情形時,當為 MFRa<MFRb・・(式1) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.5質量%以上5質量%以下,當為 MFRa≧MFRb・・(式2) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下。<Condition (ii)> When the sum of the said vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is made into 100 mass %, the said (a) component is more than 30 mass % and 50 mass % or less, and the said (b) When the component is less than 70% by mass and 50% by mass or more, it shall be MFRa<MFRb・・(Formula 1) When the relationship between the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.5 mass % or more and 5 mass % or less, which is MFRa≧MFRb・・(Formula 2) In the case of the relationship, when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is set to 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less.

藉由滿足上述條件(ii),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,可獲得由乙烯基芳香族烴系樹脂(a)帶來之進一步提高樹脂組合物之剛性之效果。 條件(ii)中,上述供體-受體系分子化合物(c)之含量於滿足上述(式1)之情形時,較佳為1~5質量%,更佳為2~4質量%。 又,於滿足上述(式2)之情形時,較佳為2~5質量%,更佳為2~4質量%。By satisfying the above-mentioned condition (ii), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. Moreover, the effect of further improving the rigidity of a resin composition by vinyl aromatic hydrocarbon resin (a) can be acquired. In the condition (ii), the content of the above-mentioned donor-acceptor system molecular compound (c) is preferably 1 to 5 mass %, more preferably 2 to 4 mass %, as long as the above-mentioned (Formula 1) is satisfied. Moreover, when satisfying the said (Formula 2), it is preferable that it is 2-5 mass %, and it is more preferable that it is 2-4 mass %.

<條件(iii)> 於將上述乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量%時,上述(a)成分為超過50質量%且70質量%以下,上述(b)成分為未達50質量%且30質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,且將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述供體-受體系分子化合物(c)為0.9質量%以上5質量%以下。<Condition (iii)> When the sum of the said vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is made into 100 mass %, the said (a) component is more than 50 mass % and 70 mass % or less, and the said (b) When the component is less than 50 mass % and 30 mass % or more, Satisfy MFRa<MFRb・・(Formula 1) The relationship between the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100% by mass, and the above-mentioned donor-acceptor system molecular compound (c) is 0.9% by mass or more and 5% by mass the following.

藉由滿足上述條件(iii),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,可獲得源自乙烯基芳香族烴系樹脂(a)之進一步提高樹脂組合物之剛性之效果。 條件(iii)中,上述供體-受體系分子化合物(c)之含量較佳為2~5質量%,更佳為3~5質量%。By satisfying the above-mentioned condition (iii), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. In addition, the effect of further enhancing the rigidity of the resin composition derived from the vinyl aromatic hydrocarbon resin (a) can be obtained. In the condition (iii), the content of the above-mentioned donor-acceptor system molecular compound (c) is preferably 2 to 5 mass %, more preferably 3 to 5 mass %.

<條件(iv)> 於將上述乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量%時,上述(a)成分為超過70質量%且81質量%以下,上述(b)成分為未達30質量%且19質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述供體-受體系分子化合物(c)之含量為3質量%以上5質量%以下。<Condition (iv)> When the sum of the said vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is made into 100 mass %, the said (a) component is more than 70 mass % and 81 mass % or less, and the said (b) When the component is less than 30 mass % and 19 mass % or more, Satisfy MFRa<MFRb・・(Formula 1) When the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100% by mass, the content of the above-mentioned donor-acceptor molecular compound (c) is 3% by mass or more and 5% by mass %the following.

藉由滿足上述條件(iv),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,可獲得提高至接近於乙烯基芳香族烴系樹脂(a)原本所具有之剛性之值之效果。 條件(iv)中,上述供體-受體系分子化合物(c)之含量較佳為3.5~5質量%,更佳為4~5質量%。By satisfying the above-mentioned condition (iv), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. Moreover, the effect of raising to the value close to the rigidity which vinyl aromatic hydrocarbon resin (a) originally has can be obtained. In the condition (iv), the content of the above-mentioned donor-acceptor system molecular compound (c) is preferably 3.5 to 5 mass %, more preferably 4 to 5 mass %.

本說明書中,構成聚合物之各單體單元之命名係依據單體單元所源自之單體之命名。例如,所謂「乙烯基芳香族烴單體單元」係指作為單體之乙烯基芳香族烴單體進行聚合所產生之聚合物之結構單元,其結構係源自取代乙烯基之取代伸乙基之二個碳成為聚合物主鏈之分子結構。 又,所謂「共軛二烯單體單元」係指作為單體之共軛二烯進行聚合所產生之聚合物之結構單元,其結構係源自共軛二烯單體之烯烴之二個碳成為聚合物主鏈之分子結構。In this specification, the naming of each monomer unit constituting the polymer is based on the name of the monomer from which the monomer unit is derived. For example, the so-called "vinyl aromatic hydrocarbon monomer unit" refers to the structural unit of the polymer produced by the polymerization of vinyl aromatic hydrocarbon monomer as the monomer, the structure of which is derived from the substituted ethyl extension of the substituted vinyl group The two carbons become the molecular structure of the polymer backbone. In addition, the so-called "conjugated diene monomer unit" refers to the structural unit of the polymer produced by the polymerization of the conjugated diene as the monomer, the structure of which is derived from the two carbons of the olefin of the conjugated diene monomer It becomes the molecular structure of the polymer backbone.

再者,本說明書中,所謂「主體」係指特定之單體單元之含量為90質量%以上。 例如,於嵌段共聚物(b)中,所謂「以乙烯基芳香族烴單體單元為主體之聚合物嵌段」係指乙烯基芳香族烴單體單元為90質量%以上之嵌段。 乙烯基芳香族烴單體單元未達90質量%且共軛二烯單體單元超過10質量%之聚合物嵌段定義為無規共聚物嵌段。 無規共聚物嵌段可為完全無規結構,亦可為遞變(tapered)結構(共聚組成比率沿鏈而階段性變化)。In addition, in this specification, the "main body" means that the content of a specific monomer unit is 90 mass % or more. For example, in the block copolymer (b), the "polymer block mainly composed of vinyl aromatic hydrocarbon monomer units" means a block containing 90 mass % or more of vinyl aromatic hydrocarbon monomer units. A polymer block in which the vinyl aromatic hydrocarbon monomer unit is less than 90% by mass and the conjugated diene monomer unit exceeds 10% by mass is defined as a random copolymer block. The random copolymer block may have a completely random structure or may have a tapered structure (the copolymerization composition ratio changes stepwise along the chain).

(嵌段共聚物(b)、供體-受體系分子化合物(c)之質量比) 本實施方式之第一抗靜電性樹脂組合物包含含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物(b)、及供體-受體系分子化合物(c)。 上述嵌段共聚物(b)中,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%。 將上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下。(mass ratio of block copolymer (b) to donor-acceptor molecular compound (c)) The first antistatic resin composition of the present embodiment includes a block copolymer (b) containing a vinyl aromatic hydrocarbon monomer unit and a conjugated diene monomer unit, and a donor-acceptor system molecular compound (c) . In the said block copolymer (b), the vinyl aromatic hydrocarbon monomer unit is 30-90 mass %, and the conjugated diene monomer unit is 70-10 mass %. When the total of the block copolymer (b) and the donor-acceptor molecular compound (c) is 100 mass %, the content of the donor-acceptor molecular compound (c) is 0.5 mass % or more and 5 mass % %the following.

(乙烯基芳香族烴系樹脂(a)、嵌段共聚物(b)、供體-受體系分子化合物(c)之質量比) 本實施方式之第二抗靜電性樹脂組合物中之乙烯基芳香族烴系樹脂(a)與嵌段共聚物(b)之質量比為乙烯基芳香族烴系樹脂(a)/嵌段共聚物(b)=超過0之量/未達100~81以下/19以上之間。 根據上述質量比率內乙烯基芳香族烴系樹脂(a)與嵌段共聚物(b)之質量比之變動,依據各自MFR值(MFRa與MFRb)之大小,決定表現性能之供體-受體系分子化合物(c)之最低需要量。 依據根據質量比之乙烯基芳香族烴系樹脂(a)與嵌段共聚物(b)之各自之MFR值之條件,以可表現充分之抗靜電性能之方式決定乙烯基芳香族烴系樹脂(a)/嵌段共聚物(b)之比率及/或供體-受體系分子化合物(c)之含量。(Mass ratio of vinyl aromatic hydrocarbon resin (a), block copolymer (b), and donor-acceptor molecular compound (c)) The mass ratio of vinyl aromatic hydrocarbon resin (a) and block copolymer (b) in the second antistatic resin composition of the present embodiment is vinyl aromatic hydrocarbon resin (a)/block copolymer Substance (b)=amount exceeding 0/less than 100-81 or less/19 or more. According to the change of the mass ratio of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) in the above mass ratio, according to the size of the respective MFR values (MFRa and MFRb), the donor-acceptor system that expresses the performance is determined. Minimum required amount of molecular compound (c). The vinyl aromatic hydrocarbon resin ( The ratio of a)/block copolymer (b) and/or the content of the donor-acceptor molecular compound (c).

於本實施方式之抗靜電性樹脂組合物中,用以達成優異之防靜電性能、即抗靜電性能表現的乙烯基芳香族烴系樹脂(a)與嵌段共聚物(b)之質量比及MFR之相對比較值與達成抗靜電性能表現之供體-受體系分子化合物(c)之最低限度之必需調配量存在密切關係。 例如,若不使用嵌段共聚物(b),則即使於乙烯基芳香族烴系樹脂(a)中調配4質量%左右之供體-受體系分子化合物(c),亦不表現抗靜電性能。為表現抗靜電性能,於將乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量份之情形時,必須為嵌段共聚物(b)之含量至少為19質量%以上之組成。 又,若將乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)之合計設為100質量%時之嵌段共聚物(b)為70質量%以上,則供體-受體系分子化合物(c)之達成抗靜電性能表現之最低調配量成為0.5質量%,又,因不依賴乙烯基芳香族烴系樹脂(a)或嵌段共聚物(b)之MFR值,故而表現性能之組成範圍格外廣。 例如,即使不使用乙烯基芳香族烴樹脂(a)而於嵌段共聚物(b)99.5質量%中調配供體-受體系分子化合物(c)0.5質量%,亦發揮抗靜電性能。即,為使乙烯基芳香族烴樹脂表示抗靜電性能,嵌段共聚物(b)必須存在一定比率以上,認為與抗靜電性能表現之達成存在某種相互作用。In the antistatic resin composition of the present embodiment, the mass ratio of vinyl aromatic hydrocarbon resin (a) and block copolymer (b) for achieving excellent antistatic performance, that is, antistatic performance performance, and The relative comparative value of MFR is closely related to the minimum required formulation amount of the donor-acceptor molecular compound (c) to achieve antistatic performance. For example, if the block copolymer (b) is not used, even if about 4 mass % of the donor-acceptor molecular compound (c) is added to the vinyl aromatic hydrocarbon resin (a), the antistatic property is not exhibited. . In order to express antistatic performance, when the total of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is 100 parts by mass, the content of the block copolymer (b) must be at least 100 parts by mass. A composition of 19% by mass or more. Moreover, if the block copolymer (b) is 70 mass % or more when the total of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is taken as 100 mass %, the donor-acceptor system The minimum compounding amount of the molecular compound (c) to achieve antistatic performance is 0.5% by mass, and the performance is not dependent on the MFR value of the vinyl aromatic hydrocarbon resin (a) or the block copolymer (b). Its composition is very broad. For example, even if 0.5 mass % of the donor-acceptor molecular compound (c) is added to 99.5 mass % of the block copolymer (b) without using the vinyl aromatic hydrocarbon resin (a), antistatic performance is exhibited. That is, in order for the vinyl aromatic hydrocarbon resin to express antistatic performance, the block copolymer (b) must be present in a certain ratio or more, and it is considered that there is some kind of interaction with the achievement of antistatic performance.

以下,詳細說明作為本實施方式之抗靜電性樹脂組合物之構成成分之乙烯基芳香族烴系樹脂(a)、嵌段共聚物(b)及供體-受體系分子化合物(c)。Hereinafter, the vinyl aromatic hydrocarbon resin (a), the block copolymer (b), and the donor-acceptor molecular compound (c), which are constituents of the antistatic resin composition of the present embodiment, will be described in detail.

(乙烯基芳香族烴系樹脂(a)) 乙烯基芳香族烴系樹脂(a)較佳為選自由以通用聚苯乙烯(GPPS)為代表之乙烯基芳香族烴單體之均聚物(a1);以橡膠改性聚苯乙烯(HIPS)為代表之使聚丁二烯或苯乙烯-丁二烯橡膠等合成橡膠溶解於苯乙烯單體,一面攪拌一面進行接枝聚合而獲得之接枝共聚物(a2);及以MS樹脂為代表之乙烯基芳香族烴單體單元與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物(a3)所組成之群中之任一者。 相對於(a1)及(a2),(a3)之極性不同,因此與嵌段共聚物(b)混合時之分散形態不同,故而抗靜電性樹脂組合物之抗靜電性能表現之組成範圍不同。(Vinyl Aromatic Hydrocarbon Resin (a)) The vinyl aromatic hydrocarbon resin (a) is preferably a homopolymer (a1) selected from vinyl aromatic hydrocarbon monomers represented by general-purpose polystyrene (GPPS); rubber-modified polystyrene (HIPS) ) represents a graft copolymer (a2) obtained by dissolving a synthetic rubber such as polybutadiene or styrene-butadiene rubber in a styrene monomer and performing graft polymerization while stirring; and MS resin as Any of the group consisting of a random copolymer (a3) of the representative vinyl aromatic hydrocarbon monomer unit and (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer unit. Compared with (a1) and (a2), the polarity of (a3) is different, so the dispersion form when mixed with the block copolymer (b) is different, so the composition range of the antistatic performance of the antistatic resin composition is different.

上述第二抗靜電性樹脂組合物較佳為於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中,上述乙烯基芳香族烴系樹脂(a3)之MFR(以下,記為MFRa)與嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足下述(v)或(vi)之條件。The above-mentioned second antistatic resin composition is preferably the MFR of the above-mentioned vinyl aromatic hydrocarbon resin (a3) in the melt flow rate (MFR) under the conditions of 200 ° C and 5 kg load specified in ISO1133 (below, The relationship between the MFR (hereinafter referred to as MFRa) and the block copolymer (b) (hereinafter, referred to as MFRb) satisfies the following conditions (v) or (vi).

<條件(v)> 於將上述乙烯基芳香族烴系樹脂(a3)及嵌段共聚物(b)之合計設為100質量%時,(a3)成分為超過0質量%且20質量%以下,上述(b)成分為80質量%以上且未達100質量%之情形時,無論MFRa與MFRb之數值如何, 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述供體-受體系分子化合物(c)之含量均為0.5質量%以上5質量%以下。<Condition (v)> When the sum of the above-mentioned vinyl aromatic hydrocarbon resin (a3) and the block copolymer (b) is 100% by mass, the component (a3) is more than 0% by mass and not more than 20% by mass, and the component (b) above is When it is 80 mass % or more and less than 100 mass %, regardless of the values of MFRa and MFRb, When the sum of the above-mentioned (a3) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100% by mass, the content of the above-mentioned donor-acceptor molecular compound (c) is 0.5% by mass or more and 5% by mass or less. .

藉由滿足上述條件(v),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,與使用有(a1)或(a2)之組合物相比較,可獲得霧值較低且透明性優異之樹脂組合物。 條件(v)中,上述供體-受體系分子化合物(c)之含量較佳為1~5,更佳為2~4質量%。By satisfying the above-mentioned condition (v), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. Moreover, compared with the composition using (a1) or (a2), the resin composition which is low in haze value and excellent in transparency can be obtained. In the condition (v), the content of the above-mentioned donor-acceptor system molecular compound (c) is preferably 1 to 5, more preferably 2 to 4 mass %.

<條件(vi)> 於將上述乙烯基芳香族烴系樹脂(a3)及嵌段共聚物(b)之合計設為100質量%時,上述(a3)成分為超過20質量%且50質量%以下,上述(b)成分為未達80質量%且50質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。<Condition (vi)> When the sum of the above vinyl aromatic hydrocarbon resin (a3) and the block copolymer (b) is 100 mass %, the above (a3) component is more than 20 mass % and 50 mass % or less, and the above (b) When the component is less than 80% by mass and more than 50% by mass, Satisfy MFRa<MFRb・・(Formula 1) The said (c) component is 3 mass % or more and 5 mass % or less, when the sum total of said (a3) component, said (b) component, and said (c) component is made into 100 mass %.

藉由滿足上述條件(vi),可獲得表現優異之抗靜電性能且透明性亦優異之抗靜電性樹脂組合物。又,與使用有(a1)或(a2)之組合物相比較,可獲得霧值較低且透明性優異之樹脂組合物。 條件(vi)中,上述供體-受體系分子化合物(c)之含量較佳為3.5~5質量%,更佳為4~5質量%。By satisfying the above-mentioned condition (vi), an antistatic resin composition which exhibits excellent antistatic performance and is also excellent in transparency can be obtained. Moreover, compared with the composition using (a1) or (a2), the resin composition which is low in haze value and excellent in transparency can be obtained. In the condition (vi), the content of the above-mentioned donor-acceptor system molecular compound (c) is preferably 3.5 to 5 mass %, more preferably 4 to 5 mass %.

MS樹脂(a3)中之乙烯基芳香族烴單體單元(S)與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元(M)之共聚比率較佳為S/M=83/17~60/40(質量%)之間,更佳為S/M=82/18~68/32(質量%),進而較佳為S/M=82/18~78/22(質量%)。 藉由使用該組成比之MS樹脂,與嵌段共聚物(b)之折射率相近,雖分散形態並非完全相容,但呈現微米級之均勻分散形態,可獲得透明性與力學物性優異之抗靜電性樹脂組合物。 另一方面,於成分(a3)之乙烯基芳香族烴單體單元之含量未達60質量%之情形時,與嵌段共聚物(b)之折射率之背離較大,抗靜電性樹脂組合物之白濁傾向變得顯著,進而極性之背離亦變大,故而相容性亦變差,抗靜電樹脂組合物之力學特性顯著下降,故而欠佳。 只要為不損害抗靜電性能之範圍,則MS樹脂(a3)可視需要含有可共聚之其他單體單元。The copolymerization ratio of vinyl aromatic hydrocarbon monomer unit (S) and (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer unit (M) in MS resin (a3) is preferably S/M =83/17 to 60/40 (mass %), more preferably S/M=82/18 to 68/32 (mass %), more preferably S/M=82/18 to 78/22 ( quality%). By using the MS resin with this composition ratio, the refractive index is similar to that of the block copolymer (b), and although the dispersion form is not completely compatible, it exhibits a uniform dispersion form in the micron level, and can obtain excellent transparency and mechanical properties. Electrostatic resin composition. On the other hand, when the content of the vinyl aromatic hydrocarbon monomer unit of the component (a3) is less than 60% by mass, the deviation from the refractive index of the block copolymer (b) is large, and the antistatic resin combination The tendency of the material to become cloudy becomes remarkable, and further the deviation of the polarity becomes large, so that the compatibility becomes poor, and the mechanical properties of the antistatic resin composition are remarkably lowered, which is not good. As long as it is a range which does not impair antistatic performance, MS resin (a3) may contain other monomeric units which can be copolymerized as needed.

構成乙烯基芳香族烴系樹脂(a)之乙烯基芳香族烴單體只要於分子內具有芳香環與乙烯基即可,並無特別限定,例如可例舉:苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、鄰乙基苯乙烯、對乙基苯乙烯、對第三丁基苯乙烯、2,4-二甲基苯乙烯、1,3-二甲基苯乙烯、α-甲基苯乙烯、α-甲基-對甲基苯乙烯、乙烯基萘、乙烯基蒽、1,1-二苯乙烯等。 該等乙烯基芳香族烴單體可單獨使用一種或組合兩種以上使用。 該等之中,就工業上獲取之容易度及經濟性之觀點而言,較佳為苯乙烯。The vinyl aromatic hydrocarbon monomer constituting the vinyl aromatic hydrocarbon resin (a) is not particularly limited as long as it has an aromatic ring and a vinyl group in the molecule, and examples thereof include styrene and o-methylstyrene. , m-methylstyrene, p-methylstyrene, o-ethylstyrene, p-ethylstyrene, p-tert-butylstyrene, 2,4-dimethylstyrene, 1,3-dimethylstyrene Styrene, α-methylstyrene, α-methyl-p-methylstyrene, vinylnaphthalene, vinylanthracene, 1,1-stilbene, etc. These vinyl aromatic hydrocarbon monomers may be used alone or in combination of two or more. Among these, styrene is preferable from the viewpoint of industrial availability and economical efficiency.

上述乙烯基芳香族烴系樹脂中,尤其構成乙烯基芳香族烴單體單元與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物(a3)之(甲基)丙烯酸及/或(甲基)丙烯酸酯單體係指選自由丙烯酸、甲基丙烯酸、丙烯酸烷基酯及甲基丙烯酸烷基酯所組成之群中之一種或兩種以上之單體。Among the above vinyl aromatic hydrocarbon-based resins, ( Meth)acrylic acid and/or (meth)acrylate monomer system refers to one or more monomers selected from the group consisting of acrylic acid, methacrylic acid, alkyl acrylate and alkyl methacrylate .

烷基酯為碳數1~8(C1~C8)之烷基醇與丙烯酸及/或甲基丙烯酸之酯化合物之一種以上即可。 作為(甲基)丙烯酸及/或(甲基)丙烯酸酯單體,例如可例舉但不限定於:丙烯酸、甲基丙烯酸、丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸正丁酯(丙烯酸丁酯)、丙烯酸正戊酯、丙烯酸正己酯等丙烯酸C1-6烷基酯、丙烯酸環己酯等丙烯酸環烷基酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸異丙酯、甲基丙烯酸正丁酯、甲基丙烯酸正戊酯、甲基丙烯酸正己酯等甲基丙烯酸C1-6烷基酯、及甲基丙烯酸環己酯等甲基丙烯酸環己酯,該等之中,就可進一步提高乙烯基芳香族烴系樹脂(a)之軟化溫度,其結果可進一步提高所獲得之成形體之成形性及耐熱變形性之觀點而言,較佳為丙烯酸C1-6烷基酯、甲基丙烯酸C1-6烷基酯,更佳為丙烯酸C1-4烷基酯、甲基丙烯酸C1-4烷基酯,更佳為丙烯酸甲酯及/或甲基丙烯酸甲酯,進而較佳為甲基丙烯酸甲酯。The alkyl ester may be one or more of an alkyl alcohol having 1 to 8 carbon atoms (C1 to C8) and an ester compound of acrylic acid and/or methacrylic acid. Examples of (meth)acrylic acid and/or (meth)acrylic acid ester monomers include, but are not limited to, acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, isopropyl acrylate, and n-butyl acrylate. (butyl acrylate), n-amyl acrylate, n-hexyl acrylate and other C1-6 alkyl acrylates, cyclohexyl acrylate and other cycloalkyl acrylates, methyl methacrylate, ethyl methacrylate, isopropyl methacrylate C1-6 alkyl methacrylates such as propyl ester, n-butyl methacrylate, n-pentyl methacrylate, n-hexyl methacrylate, and cyclohexyl methacrylate such as cyclohexyl methacrylate, etc. Among them, from the viewpoint that the softening temperature of the vinyl aromatic hydrocarbon-based resin (a) can be further increased, and as a result, the moldability and thermal deformation resistance of the obtained molded body can be further improved, acrylic acid C1-6 is preferred. Alkyl ester, C1-6 alkyl methacrylate, more preferably C1-4 alkyl acrylate, C1-4 alkyl methacrylate, more preferably methyl acrylate and/or methyl methacrylate, More preferably, it is methyl methacrylate.

本說明書中,「乙烯基芳香族烴單體單元與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物」(a3)亦包含除乙烯基芳香族烴單體單元與其他之(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元以外,亦含有少量可與該等聚合之其他單體單元的聚合物。 其他單體單元之量較佳為於乙烯基芳香族烴系樹脂(a)中為2質量%以下。 於作為尤佳之共聚物而例示之「乙烯基芳香族烴單體單元與甲基丙烯酸甲酯之無規共聚物」之情形時,含有2質量%以下之其他單體單元之態樣亦包含其中。In this specification, "random copolymers of vinyl aromatic hydrocarbon monomer units and (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer units" (a3) also include vinyl aromatic hydrocarbons In addition to the monomer units and other (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer units, there is also a polymer containing a small amount of other monomer units that can be polymerized with these. The amount of other monomer units is preferably 2 mass % or less in the vinyl aromatic hydrocarbon-based resin (a). In the case of the "random copolymer of vinyl aromatic hydrocarbon monomer unit and methyl methacrylate" exemplified as a particularly preferred copolymer, the aspect containing 2 mass % or less of other monomer units also includes in.

乙烯基芳香族烴系樹脂(a)可藉由公知之聚合方法而製造。 作為公知之聚合方法,例如可例舉:塊狀聚合、溶液聚合、乳化聚合、懸浮聚合等。 於乙烯基芳香族烴系樹脂(a)為以GPPS為代表之乙烯基芳香族烴單體之均聚物(a1)之情形時,例如以苯乙烯單體為例可如下進行:於乙基苯之共存下並於有機過氧化物之存在下或不使用有機過氧化物,僅以熱經過自由基聚合,去除溶劑之乙基苯與未反應苯乙烯單體,獲得苯乙烯均聚物(GPPS)。The vinyl aromatic hydrocarbon resin (a) can be produced by a known polymerization method. As a well-known polymerization method, a block polymerization, solution polymerization, emulsion polymerization, suspension polymerization etc. are mentioned, for example. In the case where the vinyl aromatic hydrocarbon resin (a) is a homopolymer (a1) of a vinyl aromatic hydrocarbon monomer represented by GPPS, for example, taking a styrene monomer as an example, it can be carried out as follows: Under the coexistence of benzene and in the presence of organic peroxides or without organic peroxides, radical polymerization is carried out only with heat to remove the solvent of ethylbenzene and unreacted styrene monomers to obtain styrene homopolymers ( GPPS).

又,於乙烯基芳香族烴系樹脂(a)為以HIPS為代表之作為橡膠改性聚苯乙烯之接枝共聚物(a2)之情形時,例如將聚丁二烯溶解於乙基苯與苯乙烯單體之混合液中,於有機過氧化物之存在下,於適當之溫度下一邊攪拌一邊使之自由基聚合,去除溶劑之乙基苯與未反應苯乙烯單體,藉此可獲得橡膠改性聚苯乙烯(HIPS)。 藉由聚丁二烯之分子量(慕尼黏度或溶液黏度)或使用苯乙烯-丁二烯橡膠代替聚丁二烯等,或控制攪拌速度,可控制接枝橡膠粒子之大小或包藏形狀或其疏密。When the vinyl aromatic hydrocarbon resin (a) is a graft copolymer (a2) of rubber-modified polystyrene represented by HIPS, for example, polybutadiene is dissolved in ethylbenzene and In the mixed solution of styrene monomers, in the presence of organic peroxides, the radical polymerization is carried out while stirring at a suitable temperature, and the ethylbenzene and unreacted styrene monomers in the solvent are removed, thereby obtaining Rubber-modified polystyrene (HIPS). By using the molecular weight of polybutadiene (Muni viscosity or solution viscosity), using styrene-butadiene rubber instead of polybutadiene, etc., or controlling the stirring speed, the size or occlusion shape of the grafted rubber particles can be controlled. Dense.

進而,於乙烯基芳香族烴樹脂(a)為以MS樹脂為代表之含有(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物(a3)之情形時,工業上通常為:於乙烯基芳香族烴單體與(甲基)丙烯酸及/或(甲基)丙烯酸酯之共存下,以與上述例相同之方式,藉由自由基聚合進行製造之方法。Furthermore, in the case where the vinyl aromatic hydrocarbon resin (a) is a random copolymer (a3) containing (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer units represented by MS resins , industrially usually: in the coexistence of vinyl aromatic hydrocarbon monomers and (meth)acrylic acid and/or (meth)acrylic acid ester, in the same manner as the above example, a method for producing by radical polymerization .

乙烯基芳香族烴系樹脂(a)之MFR根據單體單元之聚合度或接枝率等因素而變化,而除該等因素外,亦會因礦物油等添加劑之添加而產生較大變化。乙烯基芳香族烴系樹脂(a)之MFR影響上述(a)成分與(b)成分之分散狀態,該分散狀態係用以表現本實施方式之抗靜電性樹脂組合物之抗靜電性能之重要要素。 上述條件(i)~(vi)規定了含有該礦物油等添加劑之狀態之(a)成分之MFR值,該MFR值直接影響本實施方式之抗靜電性樹脂組合物之性能表現。The MFR of the vinyl aromatic hydrocarbon resin (a) varies depending on factors such as the degree of polymerization of the monomer units or the graft ratio, and in addition to these factors, it also varies greatly due to the addition of additives such as mineral oil. The MFR of the vinyl aromatic hydrocarbon resin (a) affects the dispersion state of the components (a) and (b) above, and the dispersion state is important for expressing the antistatic performance of the antistatic resin composition of the present embodiment elements. The above-mentioned conditions (i) to (vi) specify the MFR value of the component (a) in the state containing the additive such as mineral oil, and the MFR value directly affects the performance of the antistatic resin composition of the present embodiment.

於乙烯基芳香族烴系樹脂(a)之製造方法中,可適宜使用乙基苯等聚合溶劑或有機過氧化物等自由基產生劑、脂肪族硫醇等鏈轉移劑。以下敍述具體例。In the production method of the vinyl aromatic hydrocarbon-based resin (a), a polymerization solvent such as ethylbenzene, a radical generator such as an organic peroxide, and a chain transfer agent such as an aliphatic mercaptan can be suitably used. Specific examples are described below.

聚合溶劑係用以將連續聚合過程中之反應系統內之黏度保持為較低者,作為該有機溶劑,例如可例舉但不限定於:苯、甲苯、乙基苯及二甲苯等烷基苯類或者丙酮或甲基乙基酮等酮類、己烷或環己烷等脂肪族烴等。The polymerization solvent is used to keep the viscosity in the reaction system low during the continuous polymerization process. As the organic solvent, for example, but not limited to, alkylbenzenes such as benzene, toluene, ethylbenzene, and xylene. ketones such as acetone or methyl ethyl ketone, aliphatic hydrocarbons such as hexane or cyclohexane, and the like.

尤其於使用多官能乙烯基芳香族烴單體作為聚合單體之情形等時,就抑制凝膠化之觀點而言,較佳為使用聚合溶劑。 藉由使用聚合溶劑,不易產生凝膠,可實現聚合製程中之更周密之控制,更容易獲得具有所期望之組成與物性之乙烯基芳香族烴系樹脂(a)。In particular, in the case of using a polyfunctional vinyl aromatic hydrocarbon monomer as a polymerization monomer, it is preferable to use a polymerization solvent from the viewpoint of suppressing gelation. By using a polymerization solvent, it is difficult to generate gel, and more careful control in the polymerization process can be achieved, and it is easier to obtain the vinyl aromatic hydrocarbon resin (a) having the desired composition and physical properties.

聚合溶劑之使用量並無特別限定,就控制凝膠化之觀點而言,通常相對於聚合反應器內之組合物整體,較佳為1~50質量%,更佳為5~25質量%之範圍內。 藉由使用1~50質量%之聚合溶劑,實現凝膠化之抑制與高度之聚合製程控制,藉此可獲得工業生產性與經濟性優異之乙烯基芳香族烴系樹脂(a)。The amount of the polymerization solvent to be used is not particularly limited, but from the viewpoint of controlling gelation, it is usually preferably 1 to 50 mass %, more preferably 5 to 25 mass % with respect to the entire composition in the polymerization reactor. within the range. By using 1-50 mass % of a polymerization solvent, suppression of gelation and high degree of polymerization process control can be achieved, whereby a vinyl aromatic hydrocarbon resin (a) excellent in industrial productivity and economy can be obtained.

於乙烯基芳香族烴系樹脂(a)之聚合步驟中,可較佳地使用有機過氧化物等自由基劑。 作為自由基劑,例如可例舉但不限定於:1,1-二(第三丁基過氧基)環己烷、2,2-二(第三丁基過氧基)丁烷、2,2-二(4,4-二-第三丁基過氧基環己基)丙烷、1,1-二(第三戊基過氧基)環己烷等過氧縮酮類;氫過氧化異丙苯、第三丁基過氧化氫等過氧化氫類;過氧化乙酸第三丁酯、過氧化異壬酸第三戊酯等過氧化烷基類;第三丁基異丙苯基過氧化物、二第三丁基過氧化物、二異丙苯基過氧化物、二第三己基過氧化物等二烷基過氧化物類;過氧化乙酸第三丁酯、過氧化苯甲酸第三丁酯、過氧化單碳酸O,O-第三丁基-O-異丙基酯等過氧酯類;過氧化碳酸O,O-第三丁基-O-異丙基酯、聚醚四(第三丁基過氧基碳酸酯)等過氧化碳酸酯類;N,N'-偶氮雙(環己烷-1-甲腈)、N,N'-偶氮雙(2-甲基丁腈)、N,N'-偶氮雙(2,4-二甲基戊腈)、N,N'-偶氮雙[2-(羥基甲基)丙腈]等。 該等自由基劑可單獨使用一種或組合兩種以上使用。In the polymerization step of the vinyl aromatic hydrocarbon resin (a), a radical agent such as an organic peroxide can be preferably used. Examples of free radical agents include, but are not limited to: 1,1-bis(tert-butylperoxy)cyclohexane, 2,2-bis(tert-butylperoxy)butane, 2 ,2-bis(4,4-di-tert-butylperoxycyclohexyl)propane, 1,1-bis(tert-amylperoxy)cyclohexane and other peroxyketals; hydroperoxide Hydrogen peroxides such as cumene and tert-butyl hydroperoxide; alkyl peroxides such as tert-butyl peroxyacetate and tert-amyl peroxy isononanoate; tert-butyl cumyl peroxide Dialkyl peroxides such as oxides, di-tert-butyl peroxide, dicumyl peroxide, and di-tert-hexyl peroxide; tert-butyl peroxyacetate, benzoic acid peroxy Peroxyesters such as tributyl, O,O-tert-butyl-O-isopropyl peroxymonocarbonate; O,O-tert-butyl-O-isopropyl peroxycarbonate, polyether Peroxycarbonates such as tetrakis(tert-butylperoxycarbonate); N,N'-azobis(cyclohexane-1-carbonitrile), N,N'-azobis(2-methylcarbonitrile) Butyronitrile), N,N'-azobis(2,4-dimethylvaleronitrile), N,N'-azobis[2-(hydroxymethyl)propionitrile], etc. These radical agents may be used alone or in combination of two or more.

進而於乙烯基芳香族烴系樹脂(a)之聚合步驟中,可使用鏈轉移劑以調整乙烯基芳香族烴系樹脂(a)之分子量。 作為鏈轉移劑,例如可例舉但不限定於:脂肪族硫醇、芳香族硫醇、五苯基乙烷、α-甲基苯乙烯二聚物、萜品油烯等。Furthermore, in the polymerization step of the vinyl aromatic hydrocarbon resin (a), a chain transfer agent can be used to adjust the molecular weight of the vinyl aromatic hydrocarbon resin (a). Examples of the chain transfer agent include, but are not limited to, aliphatic thiol, aromatic thiol, pentaphenylethane, α-methylstyrene dimer, terpinolene, and the like.

乙烯基芳香族烴系樹脂(a)之分子量可藉由調整單體濃度或有機過氧化物等自由基劑之量、鏈轉移劑之有無或量等而控制。 通常若減少自由基產生量,不使用鏈轉移劑則高分子量化,若增加自由基產生量,添加鏈轉移劑或增加量則低分子量化。The molecular weight of the vinyl aromatic hydrocarbon resin (a) can be controlled by adjusting the monomer concentration, the amount of a radical agent such as an organic peroxide, the presence or absence or amount of a chain transfer agent, and the like. Generally, when the amount of radical generation is reduced, the molecular weight is increased without using a chain transfer agent, and when the amount of radical generation is increased, the molecular weight is reduced by adding a chain transfer agent or increasing the amount.

作為乙烯基芳香族烴系樹脂(a),可使用市售品。例如GPPS及HIPS可例舉PS JAPAN公司之製品「PSJ-POLYSTYRENE」。GPPS為透明,HIPS為乳白,可較佳地利用任一品牌,但需注意如下方面:根據MFR,性能表現之傾向有所不同。 又,針對MS樹脂,可例舉PS JAPAN公司之製品「PSJ-POLYSTYRENE SC004」或「PSJ-POLYSTYRENE MM290」、Toyo Styrene公司之製品「Toyo MS MS200」或「Toyo MS MS300」、「Toyo MS KS10」等作為較佳品牌。 該等均與嵌段共聚物(b)在折射率相近,易於獲得透明組合物,又,雖分散形態並非完全相容,但呈現微米級之均勻分散性,可獲得透明性與力學物性優異之抗靜電性樹脂組合物,故而可較佳使用。As vinyl aromatic hydrocarbon resin (a), a commercial item can be used. For example, "PSJ-POLYSTYRENE", a product of PS JAPAN, can be exemplified by GPPS and HIPS. GPPS is transparent and HIPS is milky white. Either brand can be better used, but the following aspects should be noted: According to MFR, the tendency of performance is different. For MS resin, "PSJ-POLYSTYRENE SC004" or "PSJ-POLYSTYRENE MM290" manufactured by PS JAPAN, "Toyo MS MS200", "Toyo MS MS300", and "Toyo MS KS10" manufactured by Toyo Styrene Corporation can be exemplified. and so on as a better brand. These are all similar in refractive index to the block copolymer (b), and it is easy to obtain a transparent composition. Moreover, although the dispersion forms are not completely compatible, they exhibit uniform dispersion at the micron level, and can obtain excellent transparency and mechanical properties. It is an antistatic resin composition, so it can be preferably used.

(嵌段共聚物(b)) 嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%,具有至少1個以乙烯基芳香族烴單體單元為主體之聚合物嵌段。 構成嵌段共聚物(b)之以乙烯基芳香族烴單體單元為主體之聚合物嵌段係指包含90質量%以上之乙烯基芳香族烴單體單元之聚合物嵌段。 又,構成嵌段共聚物(b)之共軛二烯單體單元除可作為僅包含單獨之共軛二烯單體單元之共軛二烯聚合物嵌段含有外,亦可作為共軛二烯單體單元與乙烯基芳香族烴單體單元之共聚嵌段而含有。於共聚嵌段之情形時,可為均勻無規結構或遞變結構(單體之組成比率沿鏈而變化)等各種共聚嵌段結構。 又,嵌段共聚物(b)可組合具有不同平均分子量之兩種以上之嵌段共聚物,亦可組合乙烯基芳香族烴單體單元與共軛二烯單體單元之共聚比率不同之兩種以上之嵌段共聚物。 又,嵌段共聚物(b)視需要可含有乙烯基芳香族烴單體單元及共軛二烯單體單元以外之可聚合之其他單體單元。(block copolymer (b)) The block copolymer (b) is a block copolymer containing a vinyl aromatic hydrocarbon monomer unit and a conjugated diene monomer unit, the vinyl aromatic hydrocarbon monomer unit is 30 to 90% by mass, and the conjugated diene The monomer unit is 70 to 10% by mass, and has at least one polymer block mainly composed of vinyl aromatic hydrocarbon monomer units. The polymer block mainly composed of vinyl aromatic hydrocarbon monomer units constituting the block copolymer (b) means a polymer block containing 90 mass % or more of vinyl aromatic hydrocarbon monomer units. In addition, the conjugated diene monomer unit constituting the block copolymer (b) may be contained as a conjugated diene polymer block containing only a single conjugated diene monomer unit, but also as a conjugated diene monomer unit. It is contained in the copolymer block of olefin monomer unit and vinyl aromatic hydrocarbon monomer unit. In the case of a copolymerization block, various copolymerization block structures such as a uniform random structure or a tapered structure (the composition ratio of the monomers vary along the chain) may be used. In addition, the block copolymer (b) may be a combination of two or more block copolymers having different average molecular weights, or a combination of two types of block copolymers with different copolymerization ratios of vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units. more than one block copolymer. Moreover, the block copolymer (b) may contain another polymerizable monomer unit other than a vinyl aromatic hydrocarbon monomer unit and a conjugated diene monomer unit as needed.

乙烯基芳香族烴單體只要為於分子內具有芳香環與乙烯基者即可,例如可例舉但不限定於:苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、鄰乙基苯乙烯、對乙基苯乙烯、對第三丁基苯乙烯、2,4-二甲基苯乙烯、1,3-二甲基苯乙烯、α-甲基苯乙烯、α-甲基-對甲基苯乙烯、乙烯基萘、乙烯基蒽及1,1-二苯乙烯等。 該等乙烯基芳香族烴單體可單獨使用一種或組合兩種以上使用。 該等之中,就工業性及經濟性之觀點而言,較佳為苯乙烯。The vinyl aromatic hydrocarbon monomer only needs to have an aromatic ring and a vinyl group in the molecule, for example, but not limited to: styrene, o-methylstyrene, m-methylstyrene, p-methylbenzene Ethylene, o-ethylstyrene, p-ethylstyrene, p-tert-butylstyrene, 2,4-dimethylstyrene, 1,3-dimethylstyrene, alpha-methylstyrene, alpha -Methyl-p-methylstyrene, vinylnaphthalene, vinylanthracene and 1,1-stilbene, etc. These vinyl aromatic hydrocarbon monomers may be used alone or in combination of two or more. Among these, styrene is preferable from the viewpoint of industriality and economy.

作為共軛二烯單體,只要為具有一對共軛雙鍵之二烯烴即可,例如可例舉但不限定於:1,3-丁二烯、2-甲基-1,3-丁二烯(異戊二烯)、2,3-二甲基-1,3-丁二烯、1,3-戊二烯、1,3-己二烯等。 該等共軛二烯單體可單獨使用一種或組合兩種以上使用。 該等之中,就工業上獲取之容易度及經濟性之觀點而言,較佳為1,3-丁二烯、異戊二烯,就工業上之獲取之容易度或經濟性更高之觀點而言,更佳為1,3-丁二烯。The conjugated diene monomer may be any diene as long as it has a pair of conjugated double bonds, for example, but not limited to: 1,3-butadiene, 2-methyl-1,3-butane Diene (isoprene), 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene, 1,3-hexadiene, etc. These conjugated diene monomers may be used alone or in combination of two or more. Among them, 1,3-butadiene and isoprene are preferred from the viewpoint of industrial availability and economical efficiency, and those with higher industrial availability or economical efficiency are preferred. From a viewpoint, 1,3-butadiene is more preferable.

嵌段共聚物(b)中之乙烯基芳香族烴單體單元與共軛二烯單體單元之質量比率為乙烯基芳香族烴單體單元/共軛二烯單體單元=30/70~90/10。 藉由使各單體單元之比率為上述範圍內,可於與下述供體-受體系分子化合物(c)組合之本實施方式之抗靜電性樹脂組合物中表現良好之抗靜電性。The mass ratio of vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units in the block copolymer (b) is vinyl aromatic hydrocarbon monomer units/conjugated diene monomer units=30/70~ 90/10. By making the ratio of each monomer unit into the said range, favorable antistatic property can be exhibited in the antistatic resin composition of this embodiment combined with the following donor-acceptor system molecular compound (c).

於嵌段共聚物(b)中,乙烯基芳香族烴單體單元/共軛二烯單體單元之質量%之比率之範圍如上所述為30/70~90/10。 於構成嵌段共聚物(b)之乙烯基芳香族烴單體單元之比率未達30質量%之情形時,作為單獨成分,彈性模數非常低,故而為了將使用有該嵌段共聚物(b)之抗靜電性樹脂組合物用作電子零件包裝材,需要製為以作為成分(a)之乙烯基芳香族烴系樹脂為主體之組合物。然而,嵌段共聚物(b)自身之乙烯基芳香族烴單體單元之比率較低,故而與作為(a)成分之乙烯基芳香族烴系樹脂之相容性較差,由於該影響,存在供體-受體系分子化合物(c)之分散性亦較差之傾向。 於嵌段共聚物(b)中,藉由使乙烯基芳香族烴單體單元之含量為30質量%以上,可獲得確保實用上充分之彈性模數並且與(a)成分之相容性良好且下述(c)成分之分散性亦良好之抗靜電性樹脂組合物。In the block copolymer (b), the range of the ratio of the mass % of the vinyl aromatic hydrocarbon monomer unit/conjugated diene monomer unit is 30/70 to 90/10 as described above. When the ratio of the vinyl aromatic hydrocarbon monomer units constituting the block copolymer (b) is less than 30% by mass, the elastic modulus as a single component is very low, so in order to use the block copolymer ( When the antistatic resin composition of b) is used as a packaging material for electronic parts, it is necessary to prepare a composition mainly containing the vinyl aromatic hydrocarbon resin as the component (a). However, since the ratio of vinyl aromatic hydrocarbon monomer units in the block copolymer (b) itself is low, the compatibility with the vinyl aromatic hydrocarbon resin as the component (a) is poor, and due to this influence, there are The dispersibility of the donor-acceptor system molecular compound (c) also tends to be poor. In the block copolymer (b), by setting the content of vinyl aromatic hydrocarbon monomer units to 30% by mass or more, a practically sufficient elastic modulus can be secured and compatibility with the component (a) is good. In addition, the dispersibility of the following (c) component is also excellent in the antistatic resin composition.

另一方面,於構成嵌段共聚物(b)之乙烯基芳香族烴單體單元之比率超過90質量%之情形時,即使於將嵌段共聚物(b)設為100質量%而作為抗靜電性樹脂組合物之基材樹脂之情形時,即使以任意比率摻合乙烯基芳香族烴樹脂(a),即使調配4質量%之供體-受體系分子化合物(c)亦存在表面電阻率難以下降之傾向。On the other hand, when the ratio of the vinyl aromatic hydrocarbon monomer units constituting the block copolymer (b) exceeds 90% by mass, even if the block copolymer (b) is set to 100% by mass, In the case of the base resin of the electrostatic resin composition, even if the vinyl aromatic hydrocarbon resin (a) is blended at an arbitrary ratio, even if 4 mass % of the donor-acceptor molecular compound (c) is blended, there is a surface resistivity Tendency to be difficult to descend.

嵌段共聚物(b)中之乙烯基芳香族烴單體單元及共軛二烯單體單元之含量可藉由下述實施例中記載之方法而定量。 又,該等單體單元之含量可藉由調整嵌段共聚物(b)之聚合步驟中之各單體之添加量與比率而控制。The content of vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units in the block copolymer (b) can be quantified by the methods described in the following examples. In addition, the content of these monomer units can be controlled by adjusting the addition amount and ratio of each monomer in the polymerization step of the block copolymer (b).

作為嵌段共聚物(b),並無特別限定,例如可例舉具有下述通式(1)~(7)所表示之嵌段結構之嵌段共聚物。 S1-B1-S2・・・(1) S1-B/S1-S2・・・(2) S1-B1-S2-B2・・・(3) S1-B/S1-S2-B/S2・・・(4) S1-B/S1-B/S2-S2・・・(5) S1-B1-B/S1-S2・・・(6) S1-B1-S2-B2-S3・・・(7)Although it does not specifically limit as a block copolymer (b), For example, the block copolymer which has the block structure represented by following general formula (1)-(7) is mentioned. S1-B1-S2・・・(1) S1-B/S1-S2・・・(2) S1-B1-S2-B2・・・(3) S1-B/S1-S2-B/S2・・・(4) S1-B/S1-B/S2-S2・・・(5) S1-B1-B/S1-S2・・・(6) S1-B1-S2-B2-S3・・・(7)

上述通式(1)~(7)中,S1、S2及S3分別表示以乙烯基芳香族烴單體單元為主體之聚合物嵌段,B1及B2分別表示以共軛二烯單體單元為主體之聚合物嵌段(B),B/S1及B/S2表示乙烯基芳香族烴單體單元及共軛二烯共聚物單元之含量各自未達90質量%之無規共聚物嵌段(B/S)。In the above general formulas (1) to (7), S1, S2 and S3 respectively represent a polymer block mainly composed of vinyl aromatic hydrocarbon monomer units, and B1 and B2 respectively represent a conjugated diene monomer unit as a polymer block. The polymer block (B) of the main body, B/S1 and B/S2 represent random copolymer blocks ( B/S).

再者,上述通式(1)~(7)中對S、B、B/S賦予之編號係分別用以鑑定聚合物嵌段、聚合物嵌段(B)及無規共聚物嵌段(B/S)之編號,數字不同者各自之嵌段之分子量(聚合度)或共聚比率可相同,亦可不同。又,無規共聚物嵌段(B/S)之鏈結構可為均勻無規嵌段,亦可為遞變嵌段(組成比率沿鏈緩慢變化)。Furthermore, the numbers assigned to S, B and B/S in the above general formulae (1) to (7) are used to identify the polymer block, polymer block (B) and random copolymer block ( The number of B/S), the molecular weight (degree of polymerization) or the copolymerization ratio of the respective blocks with different numbers may be the same or different. In addition, the chain structure of the random copolymer block (B/S) may be a uniform random block or a tapered block (the composition ratio changes slowly along the chain).

又,嵌段共聚物(b)可為線狀聚合物或支鏈狀聚合物之任一者。 作為獲得支鏈狀聚合物之方法,例如可例舉:使聚合終端進行偶合反應之方法、或使用多官能起始劑自聚合初期使之分支之方法等。Moreover, the block copolymer (b) may be either a linear polymer or a branched polymer. As a method of obtaining a branched polymer, the method of carrying out a coupling reaction of a polymerization terminal, the method of branching from the initial stage of a polymerization using a polyfunctional initiator, etc. are mentioned, for example.

又,作為本實施方式之抗靜電性樹脂組合物之較佳用途,可例舉電子零件包裝材料,鑒於該用途,就要求之各種力學特性之觀點而言,嵌段共聚物(b)為具有至少1個以上之以乙烯基芳香族烴單體單元為主體之聚合物嵌段S者,較佳為具有至少2個以上之聚合物嵌段S者。 再者,於本說明書中,有時將「以乙烯基芳香族烴單體單元為主體之聚合物嵌段」記為「聚合物嵌段S」。In addition, as a preferable application of the antistatic resin composition of the present embodiment, electronic parts packaging materials can be mentioned, and in view of this application, the block copolymer (b) has a variety of required mechanical properties. It is preferable that at least one or more of the polymer blocks S mainly composed of vinyl aromatic hydrocarbon monomer units are at least two. In addition, in this specification, "the polymer block which mainly consists of vinyl aromatic hydrocarbon monomer units" may be described as "polymer block S".

<嵌段共聚物(b)之波峰分子量及分子量分佈> 本實施方式之抗靜電性樹脂組合物較佳為於藉由凝膠滲透層析測定法(GPC測定法)而測定之分子量分佈曲線中,於分子量30,000以上300,000以下之範圍內,存在至少1個源自嵌段共聚物(b)之波峰分子量。藉此,本發明之抗靜電性樹脂組合物之力學特性與成形加工性之平衡變得更佳。 就同樣之觀點而言,源自嵌段共聚物(b)之波峰分子量更佳為存在於40,000以上250,000以下之範圍內,進而較佳為存在於50,000以上210,000以下之範圍內。 再者,嵌段共聚物(b)之波峰分子量可藉由下述實施例中記載之方法而測定。<The peak molecular weight and molecular weight distribution of the block copolymer (b)> The antistatic resin composition of the present embodiment preferably has at least one molecular weight distribution curve measured by gel permeation chromatography (GPC measurement) in the range of molecular weight 30,000 or more and 300,000 or less. Peak molecular weight derived from block copolymer (b). Thereby, the balance between the mechanical properties and the moldability of the antistatic resin composition of the present invention becomes better. From the same viewpoint, the peak molecular weight derived from the block copolymer (b) is more preferably in the range of 40,000 or more and 250,000 or less, and more preferably in the range of 50,000 or more and 210,000 or less. In addition, the peak molecular weight of the block copolymer (b) can be measured by the method described in the following Example.

<嵌段共聚物(b)之分子量分佈(Mw/Mn)> 嵌段共聚物(b)之分子量分佈(Mw/Mn)並無特別限定。由於藉由下述偶合劑等而使一部分聚合物之聚合活性末端締合從而具有不同之分子量組合,故而可獲得分子量分佈(Mw/Mn)較大之嵌段共聚物(b)。<Molecular weight distribution (Mw/Mn) of block copolymer (b)> The molecular weight distribution (Mw/Mn) of the block copolymer (b) is not particularly limited. A block copolymer (b) with a larger molecular weight distribution (Mw/Mn) can be obtained by associating the polymerization-active ends of a part of the polymers by the following coupling agents and the like to have different molecular weight combinations.

進而,藉由於聚合中途添加適量之乙醇等醇而使一部分聚合物之聚合停止,藉此可獲得作為不同分子量之混合物之嵌段共聚物(b)。例如,藉由於聚合系統內添加少於聚合系統內之聚合起始劑之莫耳數之莫耳當量之乙醇等醇,可使一部分聚合物之聚合停止,故而可獲得具有複數個波峰分子量之分子量分佈(Mw/Mn)較大之嵌段共聚物(b)。Furthermore, by adding an appropriate amount of alcohol such as ethanol in the middle of the polymerization to stop the polymerization of a part of the polymer, a block copolymer (b) which is a mixture of different molecular weights can be obtained. For example, the polymerization of a part of the polymer can be stopped by adding a molar equivalent of alcohol such as ethanol that is less than the molar number of the polymerization initiator in the polymerization system, so that a molecular weight having a plurality of peak molecular weights can be obtained. Block copolymer (b) with larger distribution (Mw/Mn).

<聚合物嵌段S之數量平均分子量(Mn)> 嵌段共聚物(b)中之以乙烯基芳香族烴單體單元為主體之聚合物嵌段S之數量平均分子量(Mn)較佳為10,000~60,000,更佳為15,000~50,000,進而較佳為20,000~40,000。 藉由使聚合物嵌段S之數量平均分子量(Mn)為上述範圍內,可獲得平衡良好地具備更優異之力學特性及良好之成形外觀之成形品(例如苯乙烯系樹脂片材)。 嵌段共聚物(b)中之聚合物嵌段S之數量平均分子量(Mn)可藉由調整相對於聚合起始劑之乙烯基芳香族烴單體之供給量(饋送量)而控制。<Number average molecular weight (Mn) of polymer block S> The number-average molecular weight (Mn) of the polymer block S mainly composed of vinyl aromatic hydrocarbon monomer units in the block copolymer (b) is preferably 10,000 to 60,000, more preferably 15,000 to 50,000, still more preferably 20,000 to 40,000. By making the number average molecular weight (Mn) of the polymer block S within the above-mentioned range, a molded product (eg, a styrene-based resin sheet) having more excellent mechanical properties and favorable molded appearance in a well-balanced manner can be obtained. The number average molecular weight (Mn) of the polymer block S in the block copolymer (b) can be controlled by adjusting the feeding amount (feeding amount) of the vinyl aromatic hydrocarbon monomer relative to the polymerization initiator.

嵌段共聚物(b)含有至少1個以乙烯基芳香族烴單體單元為主體之聚合物嵌段S。較佳為含有2個以上之聚合物嵌段S,更佳為至少1個聚合物嵌段S存在於聚合物鏈之末端。關於聚合物嵌段S之分子量,於含有2個以上之情形時亦可各自獨立地控制結構。 再者,上述聚合物嵌段S之數量平均分子量(Mn)係作為嵌段共聚物(b)中之全部聚合物嵌段S合計之數量平均分子量而表示。例如,於S1-B/S1-S2結構之嵌段共聚物(b)之情形時,聚合物嵌段S之平均分子量係S1與S2合計之數量平均分子量。The block copolymer (b) contains at least one polymer block S mainly composed of vinyl aromatic hydrocarbon monomer units. It is preferable to contain two or more polymer blocks S, and it is more preferable that at least one polymer block S exists at the end of the polymer chain. Regarding the molecular weight of the polymer block S, when two or more are contained, the structure can be controlled independently of each other. In addition, the number average molecular weight (Mn) of the said polymer block S is shown as the total number average molecular weight of all the polymer blocks S in the block copolymer (b). For example, in the case of the block copolymer (b) of the S1-B/S1-S2 structure, the average molecular weight of the polymer block S is the number average molecular weight of the sum of S1 and S2.

嵌段共聚物(b)中之聚合物嵌段S之數量平均分子量可使用凝膠滲透層析法(GPC)藉由測定聚合物嵌段S成分(其中平均聚合度約30以下之乙烯基芳香族烴單體聚合物成分除外)而獲得,上述聚合物嵌段S成分係藉由將四氧化鋨作為觸媒並利用第三丁基過氧化氫將嵌段共聚物氧化分解之方法(I.M. KOLTHOFF, et al., J. Polym. Sci. 1,429(1946)中記載之方法)而獲得。具體而言,可藉由實施例中記載之法而測定。The number-average molecular weight of the polymer block S in the block copolymer (b) can be determined by gel permeation chromatography (GPC) by measuring the component S of the polymer block (the vinyl aromatics with an average degree of polymerization of about 30 or less). The above-mentioned polymer block S component is obtained by using osmium tetroxide as a catalyst and using tertiary butyl hydroperoxide to oxidatively decompose the block copolymer (IM KOLTHOFF , et al., J. Polym. Sci. 1, 429 (1946) by the method described in). Specifically, it can be measured by the method described in Examples.

<聚合物嵌段S之分子量分佈(Mw/Mn)> 嵌段共聚物(b)中之以乙烯基芳香族烴單體單元為主體之聚合物嵌段S之分子量分佈(Mw/Mn)較佳為1.5~4.0,更佳為1.6~3.6,進而較佳為1.7~3.2。 藉由使聚合物嵌段S之分子量分佈(Mw/Mn)為上述範圍內,本實施方式之抗靜電性樹脂組合物之成形加工性及嵌段共聚物(b)與乙烯基芳香族烴系樹脂(a)之分散性之平衡變得更佳,存在可獲得不易產生成形時之流動紋路等成形外觀不良而具有良好之成形外觀之成形品之傾向。<Molecular weight distribution of polymer block S (Mw/Mn)> The molecular weight distribution (Mw/Mn) of the polymer block S mainly composed of vinyl aromatic hydrocarbon monomer units in the block copolymer (b) is preferably 1.5 to 4.0, more preferably 1.6 to 3.6, and more preferably Preferably, it is 1.7 to 3.2. By making the molecular weight distribution (Mw/Mn) of the polymer block S within the above-mentioned range, the molding processability of the antistatic resin composition of the present embodiment and the block copolymer (b) and the vinyl aromatic hydrocarbon The balance of the dispersibility of the resin (a) becomes better, and there is a tendency to obtain a molded product having a favorable molding appearance, which is less likely to produce flow lines during molding and other defects in molding appearance.

嵌段共聚物(b)中之聚合物嵌段S之分子量分佈(Mw/Mn)係嵌段共聚物(b)中之全部聚合物嵌段S合計之整體平均分子量分佈。例如於S1-B/S1-S2結構之嵌段共聚物(b)之情形時,聚合物嵌段S之平均分子量係S1及S2之平均分子量分佈。可藉由使存在2個以上之各聚合物嵌段S之鏈長接近或遠離等,調整相對於聚合起始劑之乙烯基芳香族烴單體之供給量(饋送量)而控制。The molecular weight distribution (Mw/Mn) of the polymer blocks S in the block copolymer (b) is the overall average molecular weight distribution of all the polymer blocks S in the block copolymer (b). For example, in the case of the block copolymer (b) of the S1-B/S1-S2 structure, the average molecular weight of the polymer block S is the average molecular weight distribution of S1 and S2. It can be controlled by adjusting the feeding amount (feeding amount) of the vinyl aromatic hydrocarbon monomer relative to the polymerization initiator by making the chain length of each polymer block S present at two or more close to or apart.

作為控制嵌段共聚物(b)中之聚合物嵌段S之分子量分佈(Mw/Mn)之其他方法,例如可例舉:於聚合物嵌段S之聚合步驟中,添加少於聚合起始劑之莫耳數量之乙醇等醇,使一部分聚合物之聚合停止的方法。藉此聚合物嵌段S成為包含不同之兩種分子量之混合物。亦可藉由如此製為具有2個以上之具有不同鏈長分佈之聚合物嵌段S之嵌段共聚物(b),而控制聚合物嵌段S之分子量分佈。 嵌段共聚物(b)中之聚合物嵌段S之分子量分佈(Mw/Mn)具體而言可藉由下述實施例中記載之方法而求得。As another method for controlling the molecular weight distribution (Mw/Mn) of the polymer block S in the block copolymer (b), for example, in the polymerization step of the polymer block S, adding less than A method of stopping the polymerization of a part of the polymer by using an alcohol such as ethanol in a molar amount of the agent. The polymer block S thereby becomes a mixture comprising two different molecular weights. The molecular weight distribution of the polymer blocks S can also be controlled by thus preparing a block copolymer (b) having two or more polymer blocks S having different chain length distributions. Specifically, the molecular weight distribution (Mw/Mn) of the polymer block S in the block copolymer (b) can be obtained by the method described in the following examples.

<嵌段共聚物(b)之製造方法> 構成本實施方式之抗靜電性樹脂組合物之嵌段共聚物(b)之製造方法可利用公知之技術。若例示代表性之先前技術,則可例舉如下方法:於烴溶劑中使用有機鋰化合物等陰離子性聚合起始劑,使共軛二烯單體與乙烯基芳香族烴單體嵌段共聚。例如可藉由日本專利特公昭36-19286號公報、日本專利特公昭43-17979號公報、日本專利特公昭48-2423號公報、日本專利特公昭49-36957號公報、日本專利特公昭57-49567號公報、日本專利特公昭58-11446號公報中記載之方法而製造。<Method for producing block copolymer (b)> A well-known technique can be utilized for the manufacturing method of the block copolymer (b) which comprises the antistatic resin composition of this embodiment. As a representative prior art, a method of block-copolymerizing a conjugated diene monomer and a vinyl aromatic hydrocarbon monomer using an anionic polymerization initiator such as an organolithium compound in a hydrocarbon solvent can be exemplified. For example, Japanese Patent Publication No. 36-19286, Japanese Patent Publication No. 43-17979, Japanese Patent Publication No. 48-2423, Japanese Patent Publication No. 49-36957, and Japanese Patent Publication No. 57- Manufactured by the method described in Japanese Patent Publication No. 49567 and Japanese Patent Publication No. Sho 58-11446.

嵌段共聚物(b)可藉由於烴溶劑中使乙烯基芳香族烴單體與共軛二烯單體共聚而獲得。 作為用於製造嵌段共聚物(b)之烴溶劑,可使用先前公知之烴溶劑。例如可例舉但不限定於:正丁烷、異丁烷、正戊烷、正己烷、正庚烷、正辛烷等脂肪族烴類;環戊烷、甲基環戊烷、環己烷、甲基環己烷、環庚烷、甲基環庚烷等脂環式烴類;又,苯、甲苯、二甲苯、乙基苯等芳香族烴等。 該等烴溶劑可單獨使用一種,亦可組合兩種以上使用。該等之中,於使用有機鋰起始劑之情形時,通常為正己烷、環己烷,其中環己烷於工業上最為通用,可較佳使用。The block copolymer (b) can be obtained by copolymerizing a vinyl aromatic hydrocarbon monomer and a conjugated diene monomer in a hydrocarbon solvent. As the hydrocarbon solvent for producing the block copolymer (b), a previously known hydrocarbon solvent can be used. For example, but not limited to: n-butane, isobutane, n-pentane, n-hexane, n-heptane, n-octane and other aliphatic hydrocarbons; cyclopentane, methylcyclopentane, cyclohexane , alicyclic hydrocarbons such as methylcyclohexane, cycloheptane, and methylcycloheptane; and aromatic hydrocarbons such as benzene, toluene, xylene, and ethylbenzene. These hydrocarbon solvents may be used alone or in combination of two or more. Among these, in the case of using an organolithium initiator, n-hexane and cyclohexane are usually used, among which cyclohexane is the most commonly used in industry and can be preferably used.

作為聚合起始劑,並無特別限定,例如可較佳使用對共軛二烯單體及乙烯基芳香族烴單體表現陰離子聚合活性之聚合起始劑。具體可例舉:脂肪族烴鹼金屬化合物、芳香族單體鹼金屬化合物、有機胺基鹼金屬化合物等鹼金屬化合物。Although it does not specifically limit as a polymerization initiator, For example, the polymerization initiator which shows anionic polymerization activity with respect to a conjugated diene monomer and a vinyl aromatic hydrocarbon monomer can be preferably used. Specific examples thereof include alkali metal compounds such as aliphatic hydrocarbon alkali metal compounds, aromatic monomeric alkali metal compounds, and organic amine-based alkali metal compounds.

作為鹼金屬化合物中所使用之鹼金屬,並無特別限定,例如可例舉:鋰、鈉、鉀等。 作為較佳之鹼金屬化合物,例如可例舉但不限定於:作為碳數1~20之脂肪族及芳香族烴鋰化合物之於1分子中含有1個鋰之化合物、或於1分子中含有複數個鋰之二鋰化合物、三鋰化合物、四鋰化合物。 作為此種鹼金屬化合物,具體可例舉但不限定於:正丙基鋰、正丁基鋰、第二丁基鋰、第三丁基鋰、六亞甲基二鋰、丁二烯基二鋰、異戊二烯基二鋰、二異丙烯基苯與第二丁基鋰之反應產物、進而二乙烯苯與第二丁基鋰及少量1,3-丁二烯之反應產物等。Although it does not specifically limit as an alkali metal used for an alkali metal compound, For example, lithium, sodium, potassium etc. are mentioned. Examples of preferable alkali metal compounds include, but are not limited to, aliphatic and aromatic hydrocarbon lithium compounds having 1 to 20 carbon atoms, compounds containing one lithium per molecule, or compounds containing multiple lithium compounds per molecule. Dilithium compounds, trilithium compounds, and tetralithium compounds of lithium. Specific examples of such alkali metal compounds include, but are not limited to: n-propyllithium, n-butyllithium, 2-butyllithium, 3-butyllithium, hexamethylenedilithium, butadienyldilithium Lithium, isoprenyldilithium, the reaction product of diisopropenylbenzene and 2-butyllithium, and the reaction product of divinylbenzene and 2-butyllithium and a small amount of 1,3-butadiene, etc.

又,進而亦可使用美國專利第5708092號、英國專利第2241239號、美國專利第5527753號所示之外國專利中揭示之有機鹼金屬化合物。該等可單獨使用一種或組合兩種以上使用。該等之中,較佳為正丁基鋰。Furthermore, organic alkali metal compounds disclosed in foreign patents such as US Pat. No. 5,708,092, UK Pat. No. 2,241,239, and US Pat. No. 5,527,753 can also be used. These can be used alone or in combination of two or more. Among these, n-butyllithium is preferred.

作為嵌段共聚物(b)之製造製程,藉由調整作為聚合原料之乙烯基芳香族烴單體及共軛二烯單體之添加比率,可控制最終獲得之嵌段共聚物(b)之乙烯基芳香族烴單體單元之含量及共軛二烯單體單元之含量。As the production process of the block copolymer (b), by adjusting the addition ratio of the vinyl aromatic hydrocarbon monomer and the conjugated diene monomer as the polymerization raw materials, the content of the finally obtained block copolymer (b) can be controlled. The content of vinyl aromatic hydrocarbon monomer units and the content of conjugated diene monomer units.

又,作為嵌段共聚物(b)之製造製程之選項,例如亦可較佳地採用:自聚合中途追加添加聚合起始劑之製程、藉由添加少量具有2個以上之反應活性點之多官能單體而進行部分偶合反應之製程、或於聚合中途添加未達聚合活性點之醇、水等後再次供給單體而繼續聚合之製程等。藉由適宜選擇此種製程,可製作存在分子量相互不同之複數種成分之嵌段共聚物(b)。In addition, as an option for the manufacturing process of the block copolymer (b), for example, a process of additionally adding a polymerization initiator from the middle of the polymerization, and having as many as two or more reactive sites by adding a small amount of The process of partially coupling reaction with functional monomers, or the process of continuing polymerization by adding monomers again after adding alcohol, water, etc. which have not reached the active point of polymerization during polymerization. By appropriately selecting such a process, a block copolymer (b) in which a plurality of components having different molecular weights are present can be produced.

作為製作包含乙烯基芳香族烴單體單元與共軛二烯單體單元之共聚物嵌段之方法,可例舉:將乙烯基芳香族烴單體與共軛二烯單體之混合物連續供給至聚合系統進行聚合之方法、使用極性化合物或無規化劑使乙烯基芳香族烴單體與共軛二烯單體共聚等方法等。As a method for producing a copolymer block comprising vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, there may be mentioned continuous supply of a mixture of vinyl aromatic hydrocarbon monomers and conjugated diene monomers A method of performing polymerization in a polymerization system, a method of copolymerizing a vinyl aromatic hydrocarbon monomer and a conjugated diene monomer using a polar compound or a randomizer, and the like.

作為極性化合物及無規化劑,例如可例舉但不限定於:四氫呋喃、二乙二醇二甲醚、二乙二醇二丁醚等醚類;三乙胺、四甲基乙二胺等胺類;硫醚類;膦類;磷醯胺類;烷基苯磺酸鹽;鉀或鈉之烷氧化物等。Examples of polar compounds and randomizers include, but are not limited to, ethers such as tetrahydrofuran, diethylene glycol dimethyl ether, and diethylene glycol dibutyl ether; triethylamine, tetramethylethylenediamine, etc. Amines; thioethers; phosphines; phosphamides; alkylbenzene sulfonates; potassium or sodium alkoxides, etc.

作為嵌段共聚物(b)之聚合步驟中之聚合溫度,根據聚合物結構,最佳條件有所不同,於使用有聚合起始劑之陰離子聚合之情形時,通常為-10℃~150℃,較佳為40℃~120℃之範圍。 又,聚合所需之時間通常為48小時以內,較佳為1小時至10小時之範圍。又,聚合系統之環境較佳為經氮氣等惰性氣體置換。聚合壓力只要於用以於上述聚合溫度範圍內將單體及聚合溶劑維持為液層之充分之壓力範圍內進行即可,並無特別限制。進而較佳為注意不使聚合系統內意外混入使聚合起始劑及活性聚合物失活之雜質,例如水、氧、二氧化碳等。As the polymerization temperature in the polymerization step of the block copolymer (b), the optimum conditions vary depending on the polymer structure, but in the case of anionic polymerization using a polymerization initiator, it is usually -10°C to 150°C , preferably in the range of 40°C to 120°C. In addition, the time required for the polymerization is usually within 48 hours, preferably within a range of 1 hour to 10 hours. In addition, the environment of the polymerization system is preferably replaced with an inert gas such as nitrogen. The polymerization pressure is not particularly limited as long as it is performed within a pressure range sufficient to maintain the monomer and the polymerization solvent as a liquid layer within the above-mentioned polymerization temperature range. Furthermore, it is preferable to take care not to accidentally mix impurities such as water, oxygen, carbon dioxide, etc., which deactivate the polymerization initiator and the active polymer, into the polymerization system.

於嵌段共聚物(b)中含有無規共聚物嵌段之情形時,可採用將乙烯基芳香族烴單體與共軛二烯單體之混合物連續供給至聚合系統進行聚合及/或使用極性化合物或無規化劑使乙烯基芳香族烴單體與共軛二烯單體共聚等方法。When the block copolymer (b) contains random copolymer blocks, the mixture of vinyl aromatic hydrocarbon monomer and conjugated diene monomer can be continuously supplied to the polymerization system for polymerization and/or use. A polar compound or randomizing agent copolymerizes a vinyl aromatic hydrocarbon monomer and a conjugated diene monomer, and the like.

於嵌段共聚物(b)之製造中使用有機鹼金屬作為聚合起始劑之情形時,使聚合反應停止時,可較佳利用2分子以上鍵結而停止之偶合反應。偶合反應可將下述例示之偶合劑添加至聚合系統內。又,亦可藉由調整偶合劑之添加量而僅使聚合系統內之一部分聚合物偶合,藉由使未偶合聚合物與偶合聚合物共存而製造於分子量分佈中具有2個以上之波峰之嵌段共聚物(b)。In the case of using an organic alkali metal as a polymerization initiator in the production of the block copolymer (b), when stopping the polymerization reaction, a coupling reaction in which two or more molecules are bonded and stopped can be preferably used. Coupling Reaction The following exemplified coupling agents can be added to the polymerization system. In addition, by adjusting the amount of the coupling agent added, only a part of the polymer in the polymerization system can be coupled, and by coexisting the uncoupled polymer and the coupled polymer, a mosaic having two or more peaks in the molecular weight distribution can be produced. segmented copolymer (b).

作為可於嵌段共聚物(b)之製造中較佳使用之偶合劑,並無特別限定,例如可例舉:2官能以上之任意偶合劑。 具體可例舉:四縮水甘油基間苯二甲胺、四縮水甘油基-1,3-雙胺基甲基環己烷、四縮水甘油基-對苯二胺、四縮水甘油基二胺基二苯基甲烷、二縮水甘油基苯胺、二縮水甘油基鄰甲苯胺、γ-縮水甘油氧基乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丁基三甲氧基矽烷、γ-縮水甘油氧基丙基三乙氧基矽烷、γ-縮水甘油氧基丙基三丙氧基矽烷、γ-縮水甘油氧基丙基三丁氧基矽烷等含有胺基之矽烷化合物。 又,作為其他偶合劑,例如可例舉:1-[3-(三乙氧基矽烷基)-丙基]-4-甲基哌𠯤、1-[3-(二乙氧基乙基矽烷基)-丙基]-4-甲基哌𠯤、1-[3-(三甲氧基矽烷基)-丙基]-3-甲基咪唑啶、1-[3-(二乙氧基乙基矽烷基)-丙基]-3-乙基咪唑啶、1-[3-(三乙氧基矽烷基)-丙基]-3-甲基六氫嘧啶、1-[3-(二甲氧基甲基矽烷基)-丙基]-3-甲基六氫嘧啶、3-[3-(三丁氧基矽烷基)-丙基]-1-甲基-1,2,3,4-四氫嘧啶、3-[3-(二甲氧基甲基矽烷基)-丙基]-1-乙基-1,2,3,4-四氫嘧啶、1-(2-乙氧基乙基)-3-[3-(三甲氧基矽烷基)-丙基]-咪唑啶、(2-{3-[3-(三甲氧基矽烷基)-丙基]-四氫嘧啶-1-基}-乙基)二甲胺等含有矽烷基之矽烷化合物。It does not specifically limit as a coupling agent which can be used suitably for manufacture of a block copolymer (b), For example, the arbitrary coupling agent of bifunctional or more may be mentioned. Specific examples include: tetraglycidyl-m-xylylenediamine, tetraglycidyl-1,3-bisaminomethylcyclohexane, tetraglycidyl-p-phenylenediamine, tetraglycidyldiamine Diphenylmethane, Diglycidylaniline, Diglycidyl-o-toluidine, γ-glycidyloxyethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidyloxy Butyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltripropoxysilane, γ-glycidoxypropyltributoxysilane, etc. Silane compounds containing amine groups. Moreover, as other coupling agents, for example, 1-[3-(triethoxysilyl)-propyl]-4-methylpiperazane, 1-[3-(diethoxyethylsilane) yl)-propyl]-4-methylpiperidine, 1-[3-(trimethoxysilyl)-propyl]-3-methylimidazolidine, 1-[3-(diethoxyethyl) Silyl)-propyl]-3-ethylimidazolidine, 1-[3-(triethoxysilyl)-propyl]-3-methylhexahydropyrimidine, 1-[3-(dimethoxysilyl) methylsilyl)-propyl]-3-methylhexahydropyrimidine, 3-[3-(tributoxysilyl)-propyl]-1-methyl-1,2,3,4- tetrahydropyrimidine, 3-[3-(dimethoxymethylsilyl)-propyl]-1-ethyl-1,2,3,4-tetrahydropyrimidine, 1-(2-ethoxyethyl) (2-{3-[3-(trimethoxysilyl)-propyl]-tetrahydropyrimidine-1- Silane compounds containing silyl groups such as ethyl}-ethyl) dimethylamine.

又,作為其他偶合劑,例如可例舉:γ-縮水甘油氧基丙基三苯氧基矽烷、γ-縮水甘油氧基丙基甲基二甲氧基矽烷、γ-縮水甘油氧基丙基乙基二甲氧基矽烷、γ-縮水甘油氧基丙基乙基二乙氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷、γ-縮水甘油氧基丙基甲基二丙氧基矽烷、γ-縮水甘油氧基丙基甲基二丁氧基矽烷、γ-縮水甘油氧基丙基甲基二苯氧基矽烷、γ-縮水甘油氧基丙基二甲基甲氧基矽烷、γ-縮水甘油氧基丙基二乙基乙氧基矽烷、γ-縮水甘油氧基丙基二甲基乙氧基矽烷、γ-縮水甘油氧基丙基二甲基苯氧基矽烷、γ-縮水甘油氧基丙基二乙基甲氧基矽烷、γ-縮水甘油氧基丙基甲基二異丙烯氧基矽烷、雙(γ-縮水甘油氧基丙基)二甲氧基矽烷、雙(γ-縮水甘油氧基丙基)二乙氧基矽烷、雙(γ-縮水甘油氧基丙基)二丙氧基矽烷、雙(γ-縮水甘油氧基丙基)二丁氧基矽烷、雙(γ-縮水甘油氧基丙基)二苯氧基矽烷、雙(γ-縮水甘油氧基丙基)甲基甲氧基矽烷、雙(γ-縮水甘油氧基丙基)甲基乙氧基矽烷、雙(γ-縮水甘油氧基丙基)甲基丙氧基矽烷、雙(γ-縮水甘油氧基丙基)甲基丁氧基矽烷、雙(γ-縮水甘油氧基丙基)甲基苯氧基矽烷、三(γ-縮水甘油氧基丙基)甲氧基矽烷等含有縮水甘油氧基之矽烷化合物。 又,作為其他偶合劑,例如可例舉:γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基甲基三甲氧基矽烷、γ-甲基丙烯醯氧基乙基三乙氧基矽烷、雙(γ-甲基丙烯醯氧基丙基)二甲氧基矽烷、三(γ-甲基丙烯醯氧基丙基)甲氧基矽烷等含有甲基丙烯醯氧基之矽烷化合物。 又,作為其他偶合劑,例如可例舉:β-(3,4-環氧環己基)乙基-三甲氧基矽烷、β-(3,4-環氧環己基)乙基-三乙氧基矽烷、β-(3,4-環氧環己基)乙基-三丙氧基矽烷、β-(3,4-環氧環己基)乙基-三丁氧基矽烷、β-(3,4-環氧環己基)乙基-三苯氧基矽烷、β-(3,4-環氧環己基)丙基-三甲氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二甲氧基矽烷、β-(3,4-環氧環己基)乙基-乙基二甲氧基矽烷、β-(3,4-環氧環己基)乙基-乙基二乙氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二乙氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二丙氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二丁氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二苯氧基矽烷、β-(3,4-環氧環己基)乙基-二甲基甲氧基矽烷、β-(3,4-環氧環己基)乙基-二乙基乙氧基矽烷、β-(3,4-環氧環己基)乙基-二甲基乙氧基矽烷、β-(3,4-環氧環己基)乙基-二甲基丙氧基矽烷、β-(3,4-環氧環己基)乙基-二甲基丁氧基矽烷、β-(3,4-環氧環己基)乙基-二甲基苯氧基矽烷、β-(3,4-環氧環己基)乙基-二乙基甲氧基矽烷、β-(3,4-環氧環己基)乙基-甲基二異丙烯氧基矽烷等含有環氧環己基之矽烷化合物。作為其他偶合劑,可例舉:1,3-二甲基-2-咪唑啶酮、1,3-二乙基-2-咪唑啶酮、N,N'-二甲基伸丙脲、N-甲基吡咯啶酮。Moreover, as another coupling agent, γ-glycidoxypropyltriphenoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropyl Ethyldimethoxysilane, gamma-glycidoxypropylethyldiethoxysilane, gamma-glycidoxypropylmethyldiethoxysilane, gamma-glycidoxypropylmethyl Dipropoxysilane, γ-glycidoxypropylmethyldibutoxysilane, γ-glycidoxypropylmethyldiphenoxysilane, γ-glycidoxypropyldimethylmethyl Oxysilane, γ-glycidoxypropyldiethylethoxysilane, γ-glycidoxypropyldimethylethoxysilane, γ-glycidoxypropyldimethylphenoxy Silane, γ-glycidoxypropyldiethylmethoxysilane, γ-glycidoxypropylmethyldiisopropenyloxysilane, bis(γ-glycidoxypropyl)dimethoxysilane Silane, bis(γ-glycidoxypropyl)diethoxysilane, bis(γ-glycidoxypropyl)dipropoxysilane, bis(γ-glycidoxypropyl)dibutoxy Silane, bis(γ-glycidoxypropyl)diphenoxysilane, bis(γ-glycidoxypropyl)methylmethoxysilane, bis(γ-glycidoxypropyl)methyl Ethoxysilane, bis(γ-glycidoxypropyl)methylpropoxysilane, bis(γ-glycidoxypropyl)methylbutoxysilane, bis(γ-glycidoxy Silane compounds containing glycidyloxy groups such as propyl) methylphenoxysilane and tris(γ-glycidoxypropyl)methoxysilane. Moreover, as another coupling agent, for example, γ-methacryloyloxypropyltrimethoxysilane, γ-methacryloyloxypropyltriethoxysilane, γ-methacryloyloxy Alkylmethyltrimethoxysilane, γ-methacryloyloxyethyltriethoxysilane, bis(γ-methacryloyloxypropyl)dimethoxysilane, tris(γ-methacrylic acid) Silane compounds containing methacryloyloxy groups such as oxypropyl) methoxysilane. Moreover, as another coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyl-trimethoxysilane, β-(3,4-epoxycyclohexyl)ethyl-triethoxy Silane, β-(3,4-Epoxycyclohexyl)ethyl-tripropoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-tributoxysilane, β-(3, 4-Epoxycyclohexyl)ethyl-triphenoxysilane, β-(3,4-epoxycyclohexyl)propyl-trimethoxysilane, β-(3,4-epoxycyclohexyl)ethyl - Methyldimethoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-ethyldimethoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-ethyldi Ethoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-methyldiethoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-methyldipropoxysilane , β-(3,4-Epoxycyclohexyl)ethyl-methyldibutoxysilane, β-(3,4-Epoxycyclohexyl)ethyl-methyldiphenoxysilane, β-( 3,4-Epoxycyclohexyl)ethyl-dimethylmethoxysilane, β-(3,4-epoxycyclohexyl)ethyl-diethylethoxysilane, β-(3,4- Epoxycyclohexyl)ethyl-dimethylethoxysilane, β-(3,4-epoxycyclohexyl)ethyl-dimethylpropoxysilane, β-(3,4-epoxycyclohexyl) ) ethyl-dimethylbutoxysilane, β-(3,4-epoxycyclohexyl)ethyl-dimethylphenoxysilane, β-(3,4-epoxycyclohexyl)ethyl- Silane compounds containing epoxycyclohexyl such as diethylmethoxysilane and β-(3,4-epoxycyclohexyl)ethyl-methyldiisopropenyloxysilane. As other coupling agents, 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, N,N'-dimethylpropionamide, N - Methylpyrrolidone.

再者,於使上述偶合劑與嵌段共聚物(b)之活性末端進行加成反應之情形時,嵌段共聚物(b)之活性末端之結構不受任何限定,就本實施方式之抗靜電性樹脂組合物之機械強度等觀點而言,較佳為以乙烯基芳香族烴單體為主體之嵌段之活性末端。 偶合劑之使用量相對於嵌段共聚物(b)之活性末端1當量,較佳為0.1當量以上10當量以下,更佳為0.5當量以上4當量以下。偶合劑可單獨使用一種或組合任意兩種以上使用。Furthermore, in the case where the above-mentioned coupling agent is subjected to an addition reaction with the active terminal of the block copolymer (b), the structure of the active terminal of the block copolymer (b) is not limited in any way. From the viewpoint of the mechanical strength of the electrostatic resin composition, etc., the active terminal of the block mainly composed of the vinyl aromatic hydrocarbon monomer is preferable. The amount of the coupling agent to be used is preferably 0.1 equivalent or more and 10 equivalents or less, more preferably 0.5 equivalent or more and 4 equivalents or less, based on 1 equivalent of the active terminal of the block copolymer (b). The coupling agent may be used alone or in combination of any two or more.

(供體-受體系分子化合物(c)) 本實施方式之抗靜電性樹脂組合物含有供體-受體系化合物(c)。 所謂供體-受體系分子化合物(c)係指兼具供體與受體之兩者之分子化合物。此處之供體係指供電子性基,受體係指吸電子性基。 具體而言,供體-受體系分子化合物(c)較佳為將作為供體成分之下述通式(1)之上段側所表示之有機硼化合物、及作為受體成分之下述通式(1)之下段側所表示之有機氮化合物各自混合所獲得的化合物。(Donor-Acceptor Molecular Compound (c)) The antistatic resin composition of this embodiment contains a donor-acceptor system compound (c). The so-called donor-acceptor system molecular compound (c) refers to a molecular compound having both a donor and an acceptor. The donor system here refers to an electron-donating group, and the acceptor system refers to an electron-withdrawing group. Specifically, the donor-acceptor molecular compound (c) is preferably an organoboron compound represented by the above-mentioned general formula (1) as a donor component and the following general formula as an acceptor component (1) A compound obtained by mixing each of the organic nitrogen compounds shown on the lower side.

[化2]

Figure 02_image003
[hua 2]
Figure 02_image003

上述通式(1)中,R1 、R2 分別獨立為CH3 (CH2 )n -CO-OCH2 (n為12~22之整數)或HOCH2 ,且至少一者為CH3 (CH2 )n -CO-OCH3 (n為12~22之整數)。 R3 、R4 分別獨立為選自由CH3 、C2 H5 、HOCH2 、HOC2 H4 及HOCH2 CH(CH3 )所組成之群中之任一者。 此處,通式(1)中之「δ+」表示於分子內之共價鍵中存在極性,(+)表示氧原子之供電子性變強,(-)表示硼原子之吸電子性變強,「→」表示電子被拉近之路徑,「---」表示原子間鍵結力被削弱之狀態。In the above general formula (1), R 1 and R 2 are independently CH 3 (CH 2 ) n -CO-OCH 2 (n is an integer of 12 to 22) or HOCH 2 , and at least one of them is CH 3 (CH 2 ) 2 ) n- CO-OCH 3 (n is an integer of 12-22). R 3 and R 4 are each independently any one selected from the group consisting of CH 3 , C 2 H 5 , HOCH 2 , HOC 2 H 4 and HOCH 2 CH(CH 3 ). Here, "δ+" in the general formula (1) means that there is polarity in the covalent bond in the molecule, (+) means that the electron-donating property of the oxygen atom becomes stronger, and (-) means that the electron-withdrawing property of the boron atom becomes stronger. Strong, "→" indicates the path of electrons being pulled closer, "---" indicates the state where the bonding force between atoms is weakened.

包含上述通式(1)之上段側所表示之上述有機硼化合物部分之供體成分具有至少1個碳數12~22之直鏈型烴基,又,包含上述通式(1)之下段側所表示之上述有機氮化合物部分之受體成分係1個N-取代基為經由醯胺鍵與碳數12~22之直鏈型烴基之末端鍵結之基,剩餘之2個N-取代基為碳數1~3之烴基或羥基烴基的三級胺。The donor component containing the above-mentioned organoboron compound moiety represented on the upper stage side of the above-mentioned general formula (1) has at least one linear hydrocarbon group having 12 to 22 carbon atoms, and also contains the above-mentioned general formula (1) on the lower stage side. The acceptor component of the above-mentioned organic nitrogen compound part is that one N-substituent is a group bound to the end of a straight-chain hydrocarbon group having 12 to 22 carbon atoms via an amide bond, and the remaining two N-substituents are Tertiary amine of hydrocarbon group or hydroxy hydrocarbon group with 1 to 3 carbon atoms.

供體-受體系分子化合物有複數個由BORON LABORATRY製造售賣之品牌,尤其商品名「BIOMICELLE BN-105」為其代表例。There are several brands of donor-acceptor molecular compounds manufactured and sold by BORON LABORATRY, especially the trade name "BIOMICELLE BN-105" is a representative example.

本實施方式之抗靜電性樹脂組合物中所使用之供體-受體系分子化合物(c)添加至樹脂而製為組合物,藉此具有抗靜電效果,發揮抗靜電性。 藉由供體-受體系分子化合物(c)之抗靜電性表現根據調配之樹脂組合物之聚合物種類或組成比、各成分之熔融黏度等,而使其性能受到影響。 就抗靜電性能表現之觀點而言,適宜之供體-受體系分子化合物(c)之組成範圍,尤其其下限值根據乙烯基芳香族烴系樹脂(a)與嵌段共聚物(b)之質量比及各成分之MFR值而變化。The donor-acceptor molecular compound (c) used in the antistatic resin composition of the present embodiment is added to a resin to prepare a composition, thereby exhibiting an antistatic effect and exhibiting antistatic properties. The performance of the donor-acceptor molecular compound (c) is affected by the antistatic performance of the compound (c) depending on the polymer type or composition ratio of the prepared resin composition, the melt viscosity of each component, and the like. From the viewpoint of the performance of antistatic properties, the suitable composition range of the donor-acceptor system molecular compound (c), especially the lower limit value thereof, is based on the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) The mass ratio and the MFR value of each component vary.

即,本實施方式之抗靜電性樹脂組合物滿足下述(i)~(iv)之任一條件。 <條件(i)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過0質量%且30質量%以下,上述(b)成分為70質量%以上且未達100質量%之情形時, 無論MFRa與MFRb之數值如何,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分均為0.5質量%以上5質量%以下。 <條件(ii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過30質量%且50質量%以下,上述(b)成分為未達70質量%且50質量%以上之情形時,當為 MFRa<MFRb・・(式1) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.5質量%以上5質量%以下,當為 MFRa≧MFRb・・(式2) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下。 <條件(iii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過50質量%且70質量%以下,上述(b)成分為未達50質量%且30質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下。 <條件(iv)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過70質量%且81質量%以下,上述(b)成分為未達30質量%且19質量%以上之情形時, 滿足MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為4質量%以上5質量%以下。That is, the antistatic resin composition of this embodiment satisfies any one of the following conditions (i) to (iv). <Condition (i)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100% by mass, the above-mentioned (a) component is more than 0% by mass and 30% by mass or less, and the above-mentioned (b) component is 70% by mass or more and not more than 70% by mass. When it reaches 100% by mass, Regardless of the numerical values of MFRa and MFRb, when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is 100% by mass, the above-mentioned (c) component is 0.5% by mass or more and 5% by mass or less. . <Condition (ii)> When the sum of the said (a) component and the said (b) component is made into 100 mass %, the said (a) component is more than 30 mass % and 50 mass % or less, and the said (b) component is less than 70 mass % and In the case of 50% by mass or more, it shall be MFRa<MFRb・・(Formula 1) When the relationship between the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.5 mass % or more and 5 mass % or less, which is MFRa≧MFRb・・(Formula 2) In the case of the relationship, when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is set to 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less. <Condition (iii)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100 mass %, the above-mentioned (a) component is more than 50 mass % and 70 mass % or less, and the above-mentioned (b) component is less than 50 mass % and In the case of 30% by mass or more, Satisfy MFRa<MFRb・・(Formula 1) When the total of the said (a) component, the said (b) component, and the said (c) component is made into 100 mass %, the said (c) component is 0.9 mass % or more and 5 mass % or less. <Condition (iv)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100% by mass, the above-mentioned (a) component is more than 70% by mass and 81% by mass or less, and the above-mentioned (b) component is less than 30% by mass and 19% by mass or more, Satisfy MFRa<MFRb・・(Formula 1) When the total of the said (a) component, the said (b) component, and the said (c) component is made into 100 mass %, the said (c) component is 4 mass % or more and 5 mass % or less.

如此,伴隨嵌段共聚物(b)之組成比率變高,又,嵌段共聚物(b)之MFR值(MFRb)高於乙烯基芳香族烴系樹脂(a)之MFR值(MFRa)之情形時,確認以更少之添加量之供體-受體系分子化合物(c)實現表面電阻率之下降,存在易於表現抗靜電性能之傾向。In this way, as the composition ratio of the block copolymer (b) increases, the MFR value (MFRb) of the block copolymer (b) is higher than the MFR value (MFRa) of the vinyl aromatic hydrocarbon resin (a). In this case, it was confirmed that the reduction of the surface resistivity was achieved by adding a smaller amount of the donor-acceptor molecular compound (c), and there was a tendency that the antistatic property was likely to be exhibited.

(可調配於抗靜電性樹脂組合物之其他添加劑) 本實施方式之抗靜電性樹脂組合物可於不損害本實施方式之效果之範圍內含有任意添加劑。 作為添加劑,可例舉通常於樹脂或橡膠狀聚合物之調配中所使用者,例如可例舉但不限定於:碳酸鈣、碳酸鎂、二氧化矽、氧化鋅、碳黑等無機填充劑;硬脂醇等高級醇類、棕櫚酸、硬脂酸、山萮酸等脂肪酸、硬脂酸鋅、硬脂酸鈣、硬脂酸鎂、山萮酸鎂、氫化蓖麻油酸鎂等脂肪酸金屬鹽;芥子醯胺、伸乙基雙硬脂醯胺等脂肪醯胺等潤滑劑及脫模劑;石蠟油、加工處理油、有機聚矽氧烷、礦物油等軟化劑及塑化劑;受阻酚系、磷系之熱穩定劑及抗氧化劑:受阻胺系光穩定劑;苯并三唑系紫外線吸收劑:阻燃劑;有機纖維、玻璃纖維、碳纖維、金屬晶鬚等補強劑;有機顏料、無機顏料、有機染料等著色劑等。(Other additives can be formulated in the antistatic resin composition) The antistatic resin composition of this embodiment can contain arbitrary additives within the range which does not impair the effect of this embodiment. As an additive, it can be used in the formulation of resin or rubber-like polymer, such as but not limited to: calcium carbonate, magnesium carbonate, silicon dioxide, zinc oxide, carbon black and other inorganic fillers; Higher alcohols such as stearyl alcohol, fatty acids such as palmitic acid, stearic acid, and behenic acid, fatty acid metal salts such as zinc stearate, calcium stearate, magnesium stearate, magnesium behenate, and hydrogenated magnesium ricinoleate ; Lubricants and mold release agents such as fatty amides such as mustardamide and ethylene distearylamine; softeners and plasticizers such as paraffin oil, processing oil, organopolysiloxane, mineral oil, etc.; hindered phenol Heat stabilizers and antioxidants of phosphorus-based and phosphorus-based systems: hindered amine-based light stabilizers; benzotriazole-based UV absorbers: flame retardants; organic fibers, glass fibers, carbon fibers, metal whiskers and other reinforcing agents; organic pigments, Inorganic pigments, organic dyes and other colorants.

[抗靜電性樹脂組合物之製造方法] 本實施方式之抗靜電性樹脂組合物之製造方法並無特別限制,例如可例舉如下方法:將嵌段共聚物(b)及供體-受體系分子化合物(c),或於其中添加乙烯基芳香族烴系樹脂(a),於常溫下乾摻後,藉由雙軸擠出機進行加熱熔融混練,自模嘴以線狀擠出經加熱熔融之抗靜電性樹脂組合物,使之通過冷卻浴,再次造粒,獲得顆粒狀之組合物。 加熱熔融混練時,只要為可進行加熱溶融之熱塑性樹脂用混練機,則並無特別限制,例如可較佳使用:捏合機、班布里混合機、輥、帶式混合機、單軸擠出機或雙軸擠出機等混合機等混練機。 又,不僅可使用利用冷卻浴之線料切割法,亦可根據目的而較佳使用熱切割法或水中切割法等。[Manufacturing method of antistatic resin composition] The method for producing the antistatic resin composition of the present embodiment is not particularly limited. For example, the following method may be exemplified: adding ethylene to the block copolymer (b) and the donor-acceptor molecular compound (c) The aromatic hydrocarbon-based resin (a) is dry blended at room temperature, then heated, melted and kneaded by a twin-screw extruder, and the heated and melted antistatic resin composition is extruded from a die nozzle in a linear shape to make it The granulated composition was obtained by granulating again through a cooling bath. In the case of heat-melting kneading, there is no particular limitation as long as it is a kneader for thermoplastic resins that can be heated and melted. mixers such as mixers or twin-shaft extruders. Moreover, not only the strand cutting method using a cooling bath, but also a thermal cutting method, an underwater cutting method, or the like can be preferably used according to the purpose.

為充分發揮供體-受體系分子化合物(c)所具有之抗靜電性能,較佳為藉由下述製造方法製造抗靜電性樹脂組合物。 即,經過下述步驟(I)及步驟(II)而獲得本實施方式之抗靜電性樹脂組合物,步驟(I)係將嵌段共聚物(b)與供體-受體系分子化合物(c)以供體-受體系分子化合物(c)之組成比率成為5質量%以上20質量%以下之方式熔融混練,製造(c)成分為高濃度之母料,步驟(II)係將上述母料與乙烯基芳香族烴系樹脂(a)及/或嵌段共聚物(b)混練,稀釋母料。In order to fully utilize the antistatic property which the donor-acceptor system molecular compound (c) has, it is preferable to manufacture an antistatic resin composition by the following manufacturing method. That is, the antistatic resin composition of the present embodiment is obtained through the following steps (I) and (II), and the step (I) is to combine the block copolymer (b) with the donor-acceptor system molecular compound (c). ) The composition ratio of the donor-acceptor system molecular compound (c) is melt-kneaded so that the composition ratio of the molecular compound (c) is 5% by mass to 20% by mass, to produce a master batch with a high concentration of the component (c), and step (II) is to mix the above-mentioned master batch. It is kneaded with vinyl aromatic hydrocarbon resin (a) and/or block copolymer (b) to dilute the master batch.

藉由採用經由上述母料之製造方法,抗靜電性樹脂組合物中之供體-受體系分子化合物(c)之分散性顯著提高,可以更少之添加量,高效率地表現所期望之經降低之表面電阻率,所獲得之抗靜電性樹脂組合物之力學特性與抗靜電性能之平衡成為最佳。 本實施方式之抗靜電性樹脂組合物為表現性能,重要的是使用樹脂混練機使供體-受體系分子化合物(c)充分分散於包含成分(b)之樹脂基質中,或包含成分(a)與成分(b)之樹脂基質中,推薦的製造方法為:暫時製作高濃度母料後,藉由將其稀釋而獲得所期望之抗靜電性樹脂組合物。By adopting the production method through the above-mentioned master batch, the dispersibility of the donor-acceptor molecular compound (c) in the antistatic resin composition is remarkably improved, and the desired effect can be efficiently expressed with a smaller addition amount. With the reduced surface resistivity, the balance of mechanical properties and antistatic properties of the obtained antistatic resin composition becomes optimal. For the antistatic resin composition of this embodiment, it is important to use a resin kneader to sufficiently disperse the donor-acceptor molecular compound (c) in the resin matrix containing the component (b), or to contain the component (a) ) and the resin matrix of the component (b), the recommended production method is: after temporarily preparing a high concentration master batch, the desired antistatic resin composition is obtained by diluting it.

[電子零件包裝材] 本實施方式之抗靜電性樹脂組合物之成形體作為電子零件包裝材而較佳。 作為電子零件包裝材,例如可例舉:載帶、搬送托盤、料管等。 本實施方式之電子零件包裝材於其壁厚方向之構成中可為單層亦可為多層,就經濟性之觀點而言,本實施方式之電子零件包裝材中,通常本實施方式之抗靜電性樹脂組合物限定使用於電子零件包裝材之正面層或正反面層。 於與電子零件製品接觸之側之正面層部,進行具備數十微米之包含本實施方式之抗靜電性樹脂組合物之層之多層片材成形,其後,經過真空成形或壓縮成形等形成收納電子零件製品之凹部(亦稱為凹槽或壓紋)。對搬送托盤等堆疊使用之電子零件包裝材而言,其反面側亦與電子零件製品接觸,故而通常較佳使用不僅正面層,反面層亦具備本實施方式之抗靜電性樹脂組合物之電子零件包裝材。[Electronic parts packaging material] The molded body of the antistatic resin composition of this embodiment is preferable as an electronic component packaging material. As an electronic component packaging material, a carrier tape, a conveyance tray, a material tube, etc. are mentioned, for example. The electronic parts packaging material of this embodiment may be single-layered or multi-layered in its wall thickness direction. From the viewpoint of economy, among the electronic parts packaging material of this embodiment, the antistatic of this embodiment is generally used. The synthetic resin composition is limited to the front layer or the front and back layers of electronic parts packaging materials. On the surface layer portion on the side in contact with the electronic component product, a multilayer sheet having a layer containing the antistatic resin composition of the present embodiment of several tens of microns is formed, and thereafter, vacuum forming or compression forming is performed to form a container. Recesses (also known as grooves or embossing) in electronic components. For electronic parts packaging materials used for stacking such as conveying trays, the back side is also in contact with electronic parts products, so it is generally preferable to use not only the front layer but also the back layer of the electronic parts provided with the antistatic resin composition of the embodiment packaging material.

本實施方式之抗靜電性樹脂組合物即使添加供體-受體系分子化合物(c),包含成分(a)與成分(b)之基材樹脂之透明性亦不會受到較大損害。 藉由所使用之成分(a)與成分(b)之組成之選擇,可獲得透明性良好之電子零件包裝材。Even if the antistatic resin composition of the present embodiment adds the donor-acceptor molecular compound (c), the transparency of the base resin containing the components (a) and (b) is not greatly impaired. By selecting the composition of the component (a) and the component (b) to be used, a packaging material for electronic parts with good transparency can be obtained.

本實施方式之電子零件包裝材之壁厚或構成之各層之厚度並無特別限定,根據成為該包裝材之對象之電子零件,視情形而適宜設計。 於本實施方式之電子零件包裝材為擠出成形品之情形時,作為整體之壁厚,較佳為50 μm~4 mm,更佳為0.1 mm~2.0 mm,進而較佳為0.1 mm~1.5 mm,進而更佳為0.2 mm~1.2 mm。若最終用途為載帶,則傾向於薄壁,另一方面若為搬送托盤,則傾向於厚壁。 與電子零件製品接觸之包含抗靜電性樹脂組合物之層之厚度較佳為5 μm~1 mm,更佳為10 μm~0.1 mm,進而較佳為15 μm~50 μm。自原料片材進行真空成形或壓縮成形等二次加工時,亦存在壓紋側面等被拉伸而成為壁更薄之部位,故而較佳為原料片材中包含抗靜電性樹脂組合物之層預先具有某種程度之厚度。The thickness of the electronic component packaging material of the present embodiment or the thickness of each layer that constitutes it is not particularly limited, and may be appropriately designed depending on the situation according to the electronic components to be the object of the packaging material. When the electronic component packaging material of the present embodiment is an extrusion molded product, the overall wall thickness is preferably 50 μm to 4 mm, more preferably 0.1 mm to 2.0 mm, and more preferably 0.1 mm to 1.5 mm. mm, and more preferably 0.2 mm to 1.2 mm. When the end use is a carrier tape, it tends to be thin, and on the other hand, when it is a conveyance tray, it tends to be thick. The thickness of the layer containing the antistatic resin composition in contact with the electronic component product is preferably 5 μm to 1 mm, more preferably 10 μm to 0.1 mm, and still more preferably 15 μm to 50 μm. When secondary processing such as vacuum molding or compression molding is performed from the raw material sheet, there are also parts where the embossed side surface and the like are stretched to become thinner, so the layer containing the antistatic resin composition in the raw material sheet is preferred. It has a certain degree of thickness in advance.

本實施方式之電子零件包裝材為了實現步驟內循環,可於中間層之至少一層中摻合使用將片材之邊角材料粉碎所得者。於該情形時,通常為將新材與循環材以任意比率摻合之方法,但亦可單獨為循環材。循環材較佳為自同一生產線產生之類似組成,但亦可於不損害本實施方式之作用效果之範圍內,摻和由其他系列產生之不同樹脂組合物。The electronic parts packaging material of the present embodiment can be mixed with at least one layer of the intermediate layer to realize the circulation within the step, and the material obtained by pulverizing the corner material of the sheet can be used. In this case, it is usually a method of blending a new material and a recycled material at an arbitrary ratio, but the recycled material may be used alone. The recycled material is preferably a similar composition produced from the same production line, but different resin compositions produced from other series may also be blended within the scope of not impairing the effect of the present embodiment.

又,本實施方式之電子零件包裝材可於不脫離本發明之主旨之範圍內,於其表面實施印刷或電暈放電或輝光放電等放電處理、酸處理等表面處理。In addition, the electronic component packaging material of the present embodiment may be subjected to surface treatment such as printing, discharge treatment such as corona discharge or glow discharge, and acid treatment on the surface thereof without departing from the gist of the present invention.

[電子零件包裝材之特性] (表面電阻率) 抗靜電性樹脂組合物、以及自抗靜電性樹脂組合物成形所獲得之電子零件包裝材之表面電阻率為1×1012 Ω/□以下。 不調配供體-受體系分子化合物(c)之僅包含成分(a)及成分(b)之樹脂組合物或成形品係表面電阻率通常表現為1×1016 Ω/□以上之絕緣體。表面電阻率可成為1×1012 Ω/□以下是因調配供體-受體系分子化合物(c)所達成之效果。 但若為單獨之作為成分(a)之乙烯基芳香族烴系樹脂,則即使調配供體-受體系分子化合物(c)亦難以引發出其性能,作為成分(b)之嵌段共聚物之存在不可或缺。 電子零件包裝材之表面電阻率不依賴成形方法或製品之形狀,僅由與電子零件相接之表面部分之樹脂組成決定。 因此,電子零件包裝材之表面電阻率同與電子零件直接相接之抗靜電性樹脂組合物之表面電阻率為相同值,存在互換性。 表面電阻率可藉由實施例中記載之方法而測定,例如可使用SIMCO JAPAN股份有限公司製造之簡易型表面電阻計「ST-3」而測定。較佳為樣品成形為片狀,於23℃、濕度50%之恆溫室中靜置(例如24小時)後進行測定。擠出之片材樣品之表面電阻率可為各正面與反面之擠出方向(MD)與擠出垂直方向(TD)之測定值之平均值。[Characteristics of Electronic Parts Packaging Material] (Surface Resistivity) The surface resistivity of the antistatic resin composition and the electronic parts packaging material obtained by molding the antistatic resin composition is 1×10 12 Ω/□ or less. The surface resistivity of a resin composition or a molded product containing only components (a) and (b) without compounding the donor-acceptor molecular compound (c) generally exhibits an insulator with a surface resistivity of 1×10 16 Ω/□ or more. The effect that the surface resistivity can be 1×10 12 Ω/□ or less is achieved by preparing the donor-acceptor molecular compound (c). However, if it is the vinyl aromatic hydrocarbon resin as the component (a) alone, even if the donor-acceptor molecular compound (c) is formulated, it is difficult to bring out its performance, and the block copolymer as the component (b) is used. existence is indispensable. The surface resistivity of electronic parts packaging material does not depend on the molding method or the shape of the product, and is only determined by the resin composition of the surface part that is in contact with the electronic parts. Therefore, the surface resistivity of the electronic component packaging material is the same value as the surface resistivity of the antistatic resin composition directly in contact with the electronic component, and there is interchangeability. The surface resistivity can be measured by the method described in the Examples, for example, it can be measured using the simple-type surface resistivity meter "ST-3" by SIMCO JAPAN Co., Ltd. product. Preferably, the sample is formed into a sheet shape, and the measurement is performed after standing (for example, 24 hours) in a constant temperature chamber at 23° C. and a humidity of 50%. The surface resistivity of the extruded sheet samples can be the average of the measured values in the direction of extrusion (MD) and the direction perpendicular to extrusion (TD) for each of the front and back sides.

(霧值) 對本實施方式之抗靜電性樹脂組合物以及電子零件包裝材而言,根據包裝之零件之種類等,有時具有視認性時亦較佳,藉由具有透明性,適應用途變廣。例如,於搬送托盤用途中要求視認性之情形不多,但另一方面於載帶用途中要求視認性之情形亦較多,較佳為具有透明性。 實施例中所示之透明性係以如下方式測定之霧值而表現,即,依據ISO14782,使用將抗靜電性樹脂組合物進行射出成形而製作之1 mm厚之平板而測定霧值。 具有視認性(隔著包裝材可看見內容物之電子零件)之霧值之區域為20%以下,霧值越小即越接近零,視認性越高。可清晰看見內容物之霧值為4.0%以下,若霧值為2.0%以下,則甚至可看見內容物之輪廓。(fog value) The antistatic resin composition and the electronic component packaging material of the present embodiment may be preferably visible depending on the type of components to be packaged, etc., and by having transparency, it can be adapted to a wide range of applications. For example, there are not many cases where visibility is required for conveying tray applications, but there are many cases where visibility is required for carrier tape applications, and transparency is preferable. The transparency shown in the examples is represented by the haze value measured by using a 1 mm-thick flat plate produced by injection molding the antistatic resin composition in accordance with ISO14782. The area of haze value with visibility (electronic parts whose contents can be seen through the packaging material) is 20% or less, and the smaller the haze value, the closer to zero, the higher the visibility. The fog value of the contents can be clearly seen below 4.0%, and if the fog value is below 2.0%, even the outline of the contents can be seen.

為減低本實施方式之抗靜電性樹脂組合物之霧值而提高透明性,需要使乙烯基芳香族烴系樹脂(a)及嵌段共聚物(b)各自之各成分單體各自具有透明性,且乙烯基芳香族烴系樹脂(a)、嵌段共聚物(b)各自之折射率接近。具體而言,若折射率之差為0.004以下則透明性變得良好,霧值可達到4.0%以下。In order to reduce the haze value of the antistatic resin composition of the present embodiment and improve transparency, each component monomer of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) needs to have transparency. , and the refractive indices of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) are close to each other. Specifically, when the difference in refractive index is 0.004 or less, the transparency becomes good, and the haze value can be 4.0% or less.

本實施方式之抗靜電性樹脂組合物之霧值如上所述使用以射出平板測定之值,實際之電子零件包裝材以擠出成形而成形之情形較多,根據源自樹脂組合物之高次結構之分散形態、或者輥溫度、輥間之間隙或輥表面之鏡面度等拋光狀態,其擠出表面產生變化,霧值亦產生變化。又,於包含表層與中間層之多層成形片材之情形時,電子零件包裝材自身之透明性受各層透明性影響。 [實施例]The haze value of the antistatic resin composition of the present embodiment is the value measured by the injection plate as described above, and the actual electronic parts packaging material is often formed by extrusion molding. The dispersion state of the structure, or the polishing state of the roll temperature, the gap between the rolls, or the mirror surface of the roll surface, etc., the extrusion surface changes, and the haze value also changes. Furthermore, in the case of a multilayer molded sheet including a surface layer and an intermediate layer, the transparency of the electronic component packaging material itself is affected by the transparency of each layer. [Example]

以下,例舉具體之實施例及比較例,進一步詳細說明本實施方式。 再者,本實施方式不受以下實施例之任何限定。Hereinafter, the present embodiment will be described in more detail by way of specific examples and comparative examples. In addition, this embodiment is not limited by the following examples at all.

(實施例及比較例中使用之乙烯基芳香族烴系樹脂(a)及供體-受體系分子化合物(c)) 乙烯基芳香族烴系樹脂(a)-1~8、供體-受體系分子化合物(c-1)係獲取市售者而使用。 下述[表1]中揭示該等之製造商、品牌名、類別,此外亦將關於(a)成分之MFR值(表1中記為MFRa)加入表中一覽。(Vinyl aromatic hydrocarbon resin (a) and donor-acceptor molecular compound (c) used in Examples and Comparative Examples) The vinyl aromatic hydrocarbon resins (a)-1 to 8 and the donor-acceptor system molecular compound (c-1) were obtained and used by commercially available ones. These manufacturers, brand names, and categories are disclosed in the following [Table 1], and the MFR value (referred to as MFRa in Table 1) of the component (a) is also listed in the table.

[表1] (a)成分或(c)成分 (a)-1 (a)-2 (a)-3 (a)-4 (a)-5 (a)-6 (a)-7 (c)-1 製造商 PS JAPAN PS JAPAN PS JAPAN PS JAPAN PS JAPAN Toyo Styrene Toyo Styrene BORON LABORATRY 品牌名 SGP10 HF77 475D SC004 MM290 MS200NT KS10 BIOMICELLE BN-105 類別 (a1) GPPS (a1) GPPS (a2) HIPS (a3) MS樹脂 (a3) MS樹脂 (a3) MS樹脂 (a3) MS樹脂 供體-受體系分子化合物 熔體流動速率MFRa (200℃*5 kg) 1.9 7.5 2.0 6.5 0.7 1.6 18 - [Table 1] (a) Ingredient or (c) Ingredient (a)-1 (a)-2 (a)-3 (a)-4 (a)-5 (a)-6 (a)-7 (c)-1 manufacturer PS JAPAN PS JAPAN PS JAPAN PS JAPAN PS JAPAN Toyo Styrene Toyo Styrene BORON LABORATRY brand name SGP10 HF77 475D SC004 MM290 MS200NT KS10 BIOMICELLE BN-105 category (a1) GPPS (a1) GPPS (a2) HIPS (a3) MS resin (a3) MS resin (a3) MS resin (a3) MS resin Donor-Acceptor Molecular Compounds Melt flow rate MFRa (200℃*5 kg) 1.9 7.5 2.0 6.5 0.7 1.6 18 -

(乙烯基芳香族烴樹脂(a)之熔體流動速率(MFRa)) (a)成分之MFR係使用作為物性表而公開之值。 測定標準係依據ISO1133,於溫度200℃及負荷5 kgf下進行測定。與下述嵌段共聚物(b)之MFRb為相同標準及相同條件。(Melt flow rate (MFRa) of vinyl aromatic hydrocarbon resin (a)) The MFR of the component (a) used the value disclosed as a physical property table. The measurement standard is based on ISO1133, and is measured at a temperature of 200° C. and a load of 5 kgf. The same criteria and the same conditions as the MFRb of the block copolymer (b) described below are used.

(嵌段共聚物(b)) [製造例1~8] 關於嵌段共聚物(b),依據下述製造例製造各嵌段共聚物(b)-1~8。(block copolymer (b)) [Production Examples 1 to 8] Regarding the block copolymer (b), each of the block copolymers (b)-1 to 8 was produced according to the following production examples.

[製造例1] 於氮氣環境下,於以25質量%之濃度含有苯乙烯20質量份之環己烷溶液中,添加正丁基鋰0.08質量份及四甲基亞甲基二胺0.015質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯14質量份及苯乙烯10質量份之環己烷溶液,一面於80℃下聚合。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯16質量份及苯乙烯10質量份之環己烷溶液,一面於80℃下聚合。 其次,於聚合液中添加以25質量%之濃度含有苯乙烯30質量份之環己烷溶液,於80℃下聚合30分鐘。[Production Example 1] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium and 0.015 parts by mass of tetramethylmethylene diamine were added to a cyclohexane solution containing 20 parts by mass of styrene at a concentration of 25% by mass, and the mixture was heated at 80°C. Aggregate for 20 minutes. Next, a cyclohexane solution containing 14 parts by mass of 1,3-butadiene and 10 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 16 parts by mass of 1,3-butadiene and 10 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 30 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.4質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-1。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.4 part by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby the block copolymer (b)-1 was recovered .

[製造例2] 於氮氣環境下,於以25質量%之濃度含有苯乙烯31質量份之環己烷溶液中,添加正丁基鋰0.08質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯21質量份及苯乙烯20質量份之環己烷溶液,一面於80℃下聚合。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯2質量份及苯乙烯6質量份之環己烷溶液,一面於80℃下聚合。其次,於聚合液中添加以25質量%之濃度含有苯乙烯20質量份之環己烷溶液,於80℃下聚合30分鐘。[Manufacturing example 2] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium was added to a cyclohexane solution containing 31 parts by mass of styrene at a concentration of 25% by mass, and the mixture was polymerized at 80° C. for 20 minutes. Next, a cyclohexane solution containing 21 parts by mass of 1,3-butadiene and 20 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 2 parts by mass of 1,3-butadiene and 6 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 20 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.3質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-2。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.3 parts by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-2 was recovered .

[製造例3] 於氮氣環境下,於以25質量%之濃度含有苯乙烯8質量份之環己烷溶液中,添加正丁基鋰0.08質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時15分鐘連續添加以25質量%之濃度含有苯乙烯14質量份之環己烷溶液,一面於80℃下聚合。 其次,一面於聚合液中歷時15分鐘連續添加以25質量%之濃度含有1,3-丁二烯22質量份之環己烷溶液,一面於80℃下聚合。 其次,於聚合液中添加以25質量%之濃度含有苯乙烯29質量份之環己烷溶液,於80℃下聚合30分鐘。[Production Example 3] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium was added to a cyclohexane solution containing 8 parts by mass of styrene at a concentration of 25% by mass, and the mixture was polymerized at 80° C. for 20 minutes. Next, a cyclohexane solution containing 14 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 15 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 22 parts by mass of 1,3-butadiene at a concentration of 25% by mass was continuously added to the polymerization solution for 15 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 29 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使一部分聚合停止,於反應器中添加相對於正丁基鋰為0.5倍莫耳之乙醇,攪拌聚合液10分鐘後,於聚合液中添加以25質量%之濃度含有苯乙烯27質量份之環己烷溶液,於80℃下聚合30分鐘。 其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為0.5倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.4質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-3。Then, in order to stop a part of the polymerization, 0.5 times mol of ethanol with respect to n-butyllithium was added to the reactor, and after stirring the polymerization solution for 10 minutes, styrene 27 containing 25% by mass of styrene was added to the polymerization solution. A mass part of the cyclohexane solution was polymerized at 80°C for 30 minutes. Then, in order to completely stop the polymerization, 0.5 times moles of ethanol with respect to n-butyllithium was added to the reactor, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.4 parts by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-3 was recovered .

[製造例4] 於氮氣環境下,於以25質量%之濃度含有苯乙烯60質量份之環己烷溶液中,添加正丁基鋰0.08質量份及四甲基亞甲基二胺0.015質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯30質量份及苯乙烯10質量份之環己烷溶液,一面於80℃下聚合。[Production Example 4] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium and 0.015 parts by mass of tetramethylmethylene diamine were added to a cyclohexane solution containing 60 parts by mass of styrene at a concentration of 25% by mass, and the mixture was heated at 80°C. Aggregate for 20 minutes. Next, a cyclohexane solution containing 30 parts by mass of 1,3-butadiene and 10 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.3質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-4。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.3 part by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-4 was recovered .

[製造例5] 於氮氣環境下,於以25質量%之濃度含有苯乙烯40質量份之環己烷溶液中,添加正丁基鋰0.08質量份及四甲基亞甲基二胺0.015質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯15質量份及苯乙烯10質量份之環己烷溶液,一面於80℃下聚合。 其次,於聚合液中添加以25質量%之濃度含有苯乙烯35質量份之環己烷溶液,於80℃下聚合30分鐘。[Manufacturing example 5] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium and 0.015 parts by mass of tetramethylmethylene diamine were added to a cyclohexane solution containing 40 parts by mass of styrene at a concentration of 25% by mass, and the mixture was heated at 80°C. Aggregate for 20 minutes. Next, a cyclohexane solution containing 15 parts by mass of 1,3-butadiene and 10 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 35 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.2質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-5。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.2 parts by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-5 was recovered .

[製造例6] 於氮氣環境下,於以25質量%之濃度含有苯乙烯42質量份之環己烷溶液中,添加正丁基鋰0.08質量份,於80℃下聚合20分鐘。 其次,一面於聚合液中歷時10分鐘連續添加以25質量%之濃度含有1,3-丁二烯8質量份之環己烷溶液,一面於80℃下聚合。其次,於聚合液中添加以25質量%之濃度含有苯乙烯50質量份之環己烷溶液,於80℃下聚合30分鐘。[Manufacturing example 6] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium was added to a cyclohexane solution containing 42 parts by mass of styrene at a concentration of 25% by mass, and the mixture was polymerized at 80° C. for 20 minutes. Next, a cyclohexane solution containing 8 parts by mass of 1,3-butadiene at a concentration of 25% by mass was continuously added to the polymerization solution for 10 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 50 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.2質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-6。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.2 parts by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-6 was recovered .

[製造例7] 於氮氣環境下,於以25質量%之濃度含有苯乙烯16質量份之環己烷溶液中,添加正丁基鋰0.08質量份,於80℃下聚合20分鐘。 其次,於聚合液中歷時10分鐘添加以25質量%之濃度含有1,3-丁二烯68質量份之環己烷溶液,於80℃下聚合。 其次,於聚合液中添加以25質量%之濃度含有苯乙烯16質量份之環己烷溶液,於80℃下聚合30分鐘。[Manufacturing example 7] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium was added to a cyclohexane solution containing 16 parts by mass of styrene at a concentration of 25% by mass, and the mixture was polymerized at 80° C. for 20 minutes. Next, a cyclohexane solution containing 68 parts by mass of 1,3-butadiene at a concentration of 25 mass % was added to the polymerization solution for 10 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 16 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.5質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-7。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.5 parts by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-7 was recovered .

[製造例8] 於氮氣環境下,於以25質量%之濃度含有苯乙烯9質量份之環己烷溶液中,添加正丁基鋰0.08質量份,於80℃下聚合15分鐘。 其次,一面於聚合液中歷時30分鐘連續添加以25質量%之濃度含有1,3-丁二烯75質量份及苯乙烯7質量份之環己烷溶液,一面於80℃下聚合。 其次,於聚合液中添加以25質量%之濃度含有苯乙烯9質量份之環己烷溶液,於80℃下聚合30分鐘。[Production Example 8] In a nitrogen atmosphere, 0.08 parts by mass of n-butyllithium was added to a cyclohexane solution containing 9 parts by mass of styrene at a concentration of 25% by mass, and the mixture was polymerized at 80° C. for 15 minutes. Next, a cyclohexane solution containing 75 parts by mass of 1,3-butadiene and 7 parts by mass of styrene at a concentration of 25% by mass was continuously added to the polymerization solution for 30 minutes, and polymerized at 80°C. Next, a cyclohexane solution containing 9 parts by mass of styrene at a concentration of 25 mass % was added to the polymerization solution, and the solution was polymerized at 80° C. for 30 minutes.

其後,為使聚合完全停止,於反應器中添加相對於正丁基鋰為等倍莫耳之乙醇,相對於嵌段共聚物100質量份,添加作為熱穩定劑之丙烯酸2-第三丁基-6(3-第三丁基-2-羥基-5-甲基苄基)-4-甲基苯酯0.5質量份,其後去除溶劑,藉此回收嵌段共聚物(b)-8。Then, in order to completely stop the polymerization, ethanol was added to the reactor in an equal molar amount with respect to n-butyllithium, and 2-tertiary butyl acrylate was added as a heat stabilizer with respect to 100 parts by mass of the block copolymer. 0.5 part by mass of base-6(3-tert-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl ester, and then the solvent was removed, whereby block copolymer (b)-8 was recovered .

(各嵌段共聚物(b)-1~8之乙烯基芳香族烴單體單元(苯乙烯單元)及共軛二烯單體單元(丁二烯單元)之含量) 對於上述製造例1~8中獲得之各嵌段共聚物,藉由下述所示之分析法確認作為各單體成分之苯乙烯與1,3-丁二烯之共聚比率與聚合時之添加比率是否存在差異。使用島津製作所製造之紫外可見分光光度計作為分析機器。 具體而言,使各嵌段共聚物(b)1~8約30 mg(準確稱量直至0.1 mg單位為止)溶解於氯仿100 mL中,將該聚合物溶液填滿石英槽並放置於紫外可見分光光度計,對其掃描紫外線波長260~290 nm。利用苯乙烯之芳香族環於該波長區域顯示吸光性之特性,根據藉由測定而獲得之吸光波峰高度值並使用以已知之試樣製作之校準曲線,求出各嵌段共聚物(b)中所含之苯乙烯組成比率(質量%)。源自苯乙烯之峰值波長出現於269.2 nm。 結果確認聚合時之苯乙烯添加比率與嵌段共聚物中之苯乙烯組成比率無差異。另一方面,丁二烯組成比率(質量%)係藉由自100減去苯乙烯組成比率(質量%)而求得。(Contents of vinyl aromatic hydrocarbon monomer units (styrene units) and conjugated diene monomer units (butadiene units) in each block copolymer (b)-1 to 8) For each of the block copolymers obtained in the above-mentioned Production Examples 1 to 8, the copolymerization ratio of styrene and 1,3-butadiene as each monomer component and the addition during polymerization were confirmed by the analytical method shown below. whether there is a difference in the ratios. An ultraviolet-visible spectrophotometer manufactured by Shimadzu Corporation was used as an analysis device. Specifically, about 30 mg of each of the block copolymers (b) 1 to 8 (accurately weighed up to a unit of 0.1 mg) was dissolved in 100 mL of chloroform, and the polymer solution was filled in a quartz tank and placed in a UV-visible Spectrophotometer, scan the ultraviolet wavelength 260 ~ 290 nm. Using the characteristic that the aromatic ring of styrene exhibits light absorption in this wavelength region, each block copolymer (b) was obtained from the absorption peak height value obtained by measurement and using a calibration curve prepared with a known sample The composition ratio (mass %) of styrene contained in it. The peak wavelength derived from styrene occurs at 269.2 nm. As a result, it was confirmed that there was no difference between the addition ratio of styrene at the time of polymerization and the composition ratio of styrene in the block copolymer. On the other hand, the butadiene composition ratio (mass %) was obtained by subtracting the styrene composition ratio (mass %) from 100.

(各嵌段共聚物(b)-1~8之重量平均分子量Mw、數量平均分子量Mn、分子量分佈Mw/Mn、波峰分子量及分子量波峰數) 上述嵌段共聚物(b)-1~8之重量平均分子量(Mw)、數量平均分子量(Mn)、分子量分佈(Mw/Mn)、波峰分子量及分子量波峰數分別藉由凝膠滲透層析(GPC)裝置,根據下述測定條件而測定。(weight average molecular weight Mw, number average molecular weight Mn, molecular weight distribution Mw/Mn, peak molecular weight and molecular weight peak number of each block copolymer (b)-1-8) The weight average molecular weight (Mw), number average molecular weight (Mn), molecular weight distribution (Mw/Mn), peak molecular weight and molecular weight peak number of the above-mentioned block copolymers (b)-1-8 were determined by gel permeation chromatography ( GPC) apparatus, and measured according to the following measurement conditions.

(測定條件) GPC裝置:Tosoh公司製造之HLC-8220 管柱:將2根Tosoh公司製造之SuperMultiporeHZ-M串聯連接 管柱溫度:40℃ 送液量:0.2 mL/分鐘 檢測器:折射計(RI)(measurement conditions) GPC device: HLC-8220 manufactured by Tosoh Corporation Column: Connect 2 SuperMultiporeHZ-M made by Tosoh Corporation in series Column temperature: 40℃ Liquid delivery volume: 0.2 mL/min Detector: Refractometer (RI)

再者,使用四氫呋喃作為溶劑,使進行分子量測定之目標聚合物約10 mg溶解於四氫呋喃20 mL中,加以過濾,去除不溶分,獲得GPC測定用樣品。Furthermore, using tetrahydrofuran as a solvent, about 10 mg of the target polymer for molecular weight measurement was dissolved in 20 mL of tetrahydrofuran, and the mixture was filtered to remove insoluble matter to obtain a sample for GPC measurement.

具體之測定法如下所述。首先,使用9點分子量各不相同之已知分子量之標準聚苯乙烯樣品製作校準曲線。使用最高分子量之標準聚苯乙烯之重量平均分子量(Mw)為1090000,最低分子量之標準聚苯乙烯之重量平均分子量(Mw)為1050者。繼而,使用測定分子量之各嵌段聚合物以上述要點製備測定用樣品。The specific measurement method is as follows. First, a calibration curve was prepared using 9-point standard polystyrene samples of known molecular weights with different molecular weights. The weight-average molecular weight (Mw) of the standard polystyrene with the highest molecular weight was 1,090,000, and the weight-average molecular weight (Mw) of the standard polystyrene with the lowest molecular weight was 1,050. Next, a sample for measurement was prepared in the above-mentioned manner using each block polymer whose molecular weight was measured.

確認收納有管柱之槽內溫度變成固定後,注入溶液樣品開始進行測定。測定結束後,進行所獲得之分子量分佈曲線之統計處理,算出重量平均分子量(Mw)及數量平均分子量(Mn)。分子量分佈(Mw/Mn)係將所獲得之重量平均分子量(Mw)除以數量平均分子量(Mn)所得之值。又,波峰分子量及分子量波峰數根據上述分子量分佈曲線進行判斷。After confirming that the temperature in the tank containing the column has become constant, the solution sample is injected and the measurement is started. After the measurement, statistical processing of the obtained molecular weight distribution curve was performed, and the weight average molecular weight (Mw) and the number average molecular weight (Mn) were calculated. The molecular weight distribution (Mw/Mn) is a value obtained by dividing the obtained weight average molecular weight (Mw) by the number average molecular weight (Mn). In addition, the peak molecular weight and the number of molecular weight peaks were determined based on the above-mentioned molecular weight distribution curve.

(各嵌段共聚物(b)-1~8之聚合物嵌段S之重量平均分子量(Mw)、數量平均分子量(Mn)及分子量分佈(Mw/Mn)) 其次,進行構成各嵌段共聚物(b)-1~8之僅包含乙烯基芳香族單體單元之聚合物嵌段S之分子量測定。 具體而言,使用錐形燒瓶,使聚合物約20 mg溶解於約10 mL之氯仿中後,添加鋨酸溶液20 mL,於約90℃下隔水加熱30分鐘,分解共軛二烯部分。 隔水加熱後,以流水冷卻錐形燒瓶,於分解後之聚合物溶液中安靜地注入約200 mL之甲醇,使不溶解於溶劑之成分析出。 該析出之固體成分係僅包含乙烯基芳香族單體單元之聚合物嵌段S,未形成嵌段之苯乙烯單體或聚合度較低之苯乙烯仍然溶解於甲醇/第三丁基醇/氯仿混合溶液中。使用玻璃過濾器將該析出物進行抽氣過濾,利用純甲醇洗淨,進行真空乾燥,藉此僅將聚合物嵌段S自嵌段共聚物(b)單離。(Weight Average Molecular Weight (Mw), Number Average Molecular Weight (Mn) and Molecular Weight Distribution (Mw/Mn) of Polymer Block S of Each Block Copolymer (b)-1-8) Next, the molecular weight measurement of the polymer block S comprising only vinyl aromatic monomer units constituting each of the block copolymers (b)-1 to 8 was performed. Specifically, about 20 mg of the polymer was dissolved in about 10 mL of chloroform using an Erlenmeyer flask, 20 mL of an osmic acid solution was added, and the conjugated diene portion was decomposed by heating at about 90° C. for 30 minutes. After heating with water, the conical flask was cooled with running water, and about 200 mL of methanol was quietly poured into the decomposed polymer solution, so that the components insoluble in the solvent were analyzed. The precipitated solid content only contains the polymer block S of vinyl aromatic monomer units, and the styrene monomer that does not form a block or the styrene with a lower degree of polymerization is still dissolved in methanol/tert-butyl alcohol/ chloroform mixed solution. This precipitate was suction-filtered using a glass filter, washed with pure methanol, and vacuum-dried to isolate only the polymer block S from the block copolymer (b).

此處,所謂上述鋨酸溶液係指將氧化鋨(VIII)1 g、及由日油股份有限公司市售而可獲取之商品名「PERBUTYL H(化學名第三丁基過氧化氫,純度69%)」2 kg於第三丁基醇3 L中溶解、混合而成之溶液。Here, the above-mentioned osmic acid solution refers to 1 g of osmium oxide (VIII) and the trade name "PERBUTYL H (chemical name tert-butyl hydroperoxide, purity 69" commercially available from NOF Co., Ltd. %)" 2 kg dissolved in 3 L of tert-butyl alcohol and mixed.

使如此獲得之聚合物嵌段S約10 mg再次溶解於四氫呋喃20 mL中,藉由GPC裝置進行測定。測定條件及方法依據上述嵌段共聚物(b)之分子量之測定條件及方法進行。About 10 mg of the polymer block S thus obtained was dissolved again in 20 mL of tetrahydrofuran, and the measurement was carried out with a GPC apparatus. The measurement conditions and methods are based on the measurement conditions and methods of the molecular weight of the block copolymer (b) described above.

(嵌段共聚物(b)之熔體流動速率(MFRb)) 依據標準ISO1133,於溫度200℃及負荷5 kgf之條件下進行測定。(Melt flow rate (MFRb) of block copolymer (b)) According to the standard ISO1133, the measurement is carried out under the conditions of a temperature of 200°C and a load of 5 kgf.

將藉由各製造例1~8而獲得之嵌段共聚物(b)-1~8之各自製造時之單體饋送組成及乙烯基芳香族單體單元與共軛二烯單體單元之比率(質量%)、基於GPC測定結果之分子量資訊、及熔體流動速率示於下述[表2]。Monomer feed composition and ratio of vinyl aromatic monomer unit to conjugated diene monomer unit at the time of each production of the block copolymers (b)-1 to 8 obtained by each of Production Examples 1 to 8 (mass %), the molecular weight information based on the GPC measurement result, and the melt flow rate are shown in the following [Table 2].

[表2] 製造例/嵌段共聚物(b)- 1 2 3 4 5 6 7 8 嵌段共聚物(b)之結構 S1-B/S1-B/S2-S2 S1-B/S1-B/S2-S2 B1-S1-B2-S2 S1-B/S1 S1-B/S1-S2 S1-B1-S2 S1-B1-S2 S1-B/S1-S2 乙烯基芳香族單體與共軛二烯單體之添加量(質量比) 20-14/10-16/10-30 31-21/20-2/6-20 8-14-22-56 60-30/10 40-15/10-35 42-8-50 16-68-16 9-75/7-9 乙烯基芳香族單體單元之含量(質量%) 70 77 70 70 85 92 32 25 共軛二烯單體單元之含量(質量%) 30 23 30 30 15 8 68 75 重量平均分子量Mw(萬) 11.8 11.6 12.2 10.6 10.8 11.0 6.7 8.4 數量平均分子量Mn(萬) 9.0 8.5 7.1 8.8 9.1 8.1 5.4 8.1 分子量分佈Mw/Mn 1.32 1.36 1.72 1.20 1.18 1.35 1.24 1.04 波峰分子量(萬) 12.1 11.9 16.1/7.3 10.9 11.1 11.4 6.7 8.6 分子量波峰數 1 1 2 1 1 1 1 1 (中途添加乙醇) 未添加 未添加 添加 未添加 未添加 未添加 未添加 未添加 聚合物嵌段(S)數量平均分子量Mn(萬) 2.6 3.3 2.9 7.7 4.0 4.2 1.1 0.6 聚合物嵌段(S)分子量分佈Mw/Mn 1.7 2.0 2.6 1.1 1.6 1.4 1.2 1.2 熔體流動速率MFRb(200℃*5 kg) 6.5 6.9 6.2 9.0 5.8 4.9 15 18 [Table 2] Production Example/Block Copolymer (b)- 1 2 3 4 5 6 7 8 Structure of block copolymer (b) S1-B/S1-B/S2-S2 S1-B/S1-B/S2-S2 B1-S1-B2-S2 S1-B/S1 S1-B/S1-S2 S1-B1-S2 S1-B1-S2 S1-B/S1-S2 Amount of vinyl aromatic monomer and conjugated diene monomer added (mass ratio) 20-14/10-16/10-30 31-21/20-2/6-20 8-14-22-56 60-30/10 40-15/10-35 42-8-50 16-68-16 9-75/7-9 Content of vinyl aromatic monomer units (mass %) 70 77 70 70 85 92 32 25 Conjugated diene monomer unit content (mass %) 30 twenty three 30 30 15 8 68 75 Weight average molecular weight Mw (ten thousand) 11.8 11.6 12.2 10.6 10.8 11.0 6.7 8.4 Number average molecular weight Mn (ten thousand) 9.0 8.5 7.1 8.8 9.1 8.1 5.4 8.1 Molecular weight distribution Mw/Mn 1.32 1.36 1.72 1.20 1.18 1.35 1.24 1.04 Peak molecular weight (10,000) 12.1 11.9 16.1/7.3 10.9 11.1 11.4 6.7 8.6 Molecular weight peak number 1 1 2 1 1 1 1 1 (Add ethanol halfway through) not added not added Add to not added not added not added not added not added Polymer block (S) number average molecular weight Mn (ten thousand) 2.6 3.3 2.9 7.7 4.0 4.2 1.1 0.6 Polymer block (S) molecular weight distribution Mw/Mn 1.7 2.0 2.6 1.1 1.6 1.4 1.2 1.2 Melt flow rate MFRb (200℃*5 kg) 6.5 6.9 6.2 9.0 5.8 4.9 15 18

[抗靜電性樹脂組合物之製造方法] 使用上述[表1]中所示之乙烯基芳香族烴系樹脂(a)-1~7及供體-受體系分子化合物(c-1)、以及上述[製造例1~8]中所示之嵌段共聚物(b)-1~8,藉由以下記載之方法製造抗靜電性樹脂組合物。 首先,將(a)成分、(b)成分、(c)成分以所期望之組成比率於常溫下乾摻。其後,投入日本製鋼所公司製造之雙軸擠出機TEX30α(L/D=42)之料斗,於缸體溫度210℃下進行熔融混練。 再者,僅於使用有(a)-5之調配組成之情形時於缸體溫度230℃下實施。 為使上述(c)成分所具有之抗靜電性能充分發揮,必須使上述(c)成分於上述(b)成分中高度地微分散,於經由高濃度母料之製造之情形(實施例35~44)或不經由高濃度母料之製造而直接製造抗靜電性樹脂組合物之情形(實施例1~34、比較例1~24)之任一情形時,均於自各單獨成分之初次加工時,即構成成分之熔融混練步驟中,使用混練性較高之混練機,具體而言使用雙軸擠出機。[Manufacturing method of antistatic resin composition] The vinyl aromatic hydrocarbon resins (a)-1 to 7 and the donor-acceptor molecular compounds (c-1) shown in the above [Table 1] and the above [Production Examples 1 to 8] were used The block copolymers (b)-1 to 8 were produced as antistatic resin compositions by the method described below. First, component (a), component (b), and component (c) are dry-blended at room temperature in a desired composition ratio. After that, it was put into the hopper of a twin-screw extruder TEX30α (L/D=42) manufactured by Nippon Steel Works, and melt-kneaded at a cylinder temperature of 210°C. In addition, only when using the preparation composition of (a)-5, it implemented at the cylinder temperature of 230 degreeC. In order to fully exert the antistatic properties of the above-mentioned (c) component, the above-mentioned (c) component must be highly microdispersed in the above-mentioned (b) component. 44) or the case of directly producing the antistatic resin composition without producing the high-concentration master batch (Examples 1 to 34, Comparative Examples 1 to 24), all of which are from the initial processing of the individual components , that is, in the melt-kneading step of the constituent components, a kneader with high kneading property, specifically, a twin-screw extruder is used.

另一方面,於將含有高濃度之成分(c)之母料作為基材,藉由使用成分(a)及/或成分(b)將母料稀釋而製造抗靜電性樹脂組合物之情形(實施例35~44)時,於稀釋步驟中,使用混練性更低緩之單軸擠出機而稀釋母料,製造顆粒形狀之抗靜電性樹脂組合物。 其後,藉由射出成形而製造所期望之成形品,或者使用具備T模之單軸擠出機稀釋母料並且製造所期望之厚度之片狀之抗靜電性樹脂組合物。 若暫時製為成分(c)高度地微分散之母料,則即使其後之稀釋加工為低緩之混練條件,亦確認可充分發揮抗靜電性能。On the other hand, when a master batch containing a high concentration of component (c) is used as a base material, an antistatic resin composition is produced by diluting the master batch with the component (a) and/or the component (b) ( In the case of Examples 35 to 44), in the dilution step, the master batch was diluted by using a uniaxial extruder with a lower kneading property, and an antistatic resin composition in the form of pellets was produced. Thereafter, a desired molded product is produced by injection molding, or the master batch is diluted using a uniaxial extruder equipped with a T-die to produce a sheet-like antistatic resin composition of a desired thickness. When the component (c) is temporarily prepared as a master batch in which the component (c) is highly dispersed, it is confirmed that the antistatic performance can be sufficiently exhibited even if the subsequent dilution processing is performed under slow kneading conditions.

於實施高濃度母料之稀釋加工之情形(實施例35~44)時,關於實施下述射出成形之機器,使用TANABE PLASTICS MACHINERY製造之單軸擠出機VS40-28V(L/D=28;具有壓縮混練區域)製造顆粒形狀之抗靜電性樹脂組合物。又,關於實施下述擠出片材成形之機器,使用以下記載之片材擠出成形機製造具有所期望之厚度之片狀之抗靜電性樹脂組合物。In the case of carrying out the dilution process of the high-concentration masterbatch (Examples 35 to 44), the single-shaft extruder VS40-28V manufactured by TANABE PLASTICS MACHINERY (L/D=28; It has a compression-kneading zone) to produce an antistatic resin composition in the form of particles. In addition, about the machine which implements the following extrusion sheet molding, the sheet-shaped antistatic resin composition which has a desired thickness was manufactured using the sheet extrusion molding machine described below.

[抗靜電性樹脂組合物之特性] (抗靜電性樹脂組合物之擠出成形與表面電阻率測定) 如上所述,使用包含作為成分(c)之供體-受體系分子化合物高度地微分散之抗靜電性樹脂組合物之顆粒(實施例1~34、比較例1~24),或將含有高濃度之成分(c)之母料作為基材且使用成分(a)及/或成分(b)進行稀釋(實施例35~44),藉由單軸T模擠出機製作擠出片材。 T模片材成形係使用池貝股份有限公司製造之片材擠出成形機FS40-36V+TS400(單螺桿,附麥爾基式(Dulmage)混練,螺桿直徑40 mm,L/D=36,T模寬度400 mm,鏡面輥),於缸體溫度210℃、輥溫度70℃下,調整螺桿轉速與輥牽引速度,藉此分別製作厚度0.20 mm之單層片材。 再者,僅於使用有(a)-5之調配組成時於缸體溫度230℃、輥溫度80℃下實施。 評價表面電阻率時,對單層片材進行測定,測定用片材之製作係藉由單層擠出而實施。 擠出片材之兩端各修整約30 mm左右,獲得寬度220 mm之原料片材。[Characteristics of antistatic resin composition] (Extrusion molding of antistatic resin composition and measurement of surface resistivity) As described above, the particles of the antistatic resin composition (Examples 1 to 34, Comparative Examples 1 to 24) containing the molecular compound of the donor-acceptor system as the component (c) are highly microdispersed, or the The master batch of the component (c) of the concentration was used as a base material and diluted with the component (a) and/or the component (b) (Examples 35 to 44), and an extruded sheet was produced by a uniaxial T-die extruder. The T-die sheet forming system uses a sheet extrusion machine FS40-36V+TS400 (single screw, with Dulmage) manufactured by Chibei Co., Ltd., screw diameter 40 mm, L/D=36, T Mold width 400 mm, mirror roll), at a cylinder temperature of 210 °C and a roll temperature of 70 °C, adjusting the screw speed and the roller pulling speed to produce a single-layer sheet with a thickness of 0.20 mm. In addition, only when using the preparation composition containing (a)-5, it implemented at the cylinder temperature of 230 degreeC, and the roll temperature of 80 degreeC. When evaluating the surface resistivity, the single-layer sheet was measured, and the production of the measurement sheet was carried out by single-layer extrusion. Both ends of the extruded sheet were trimmed by about 30 mm to obtain a raw sheet with a width of 220 mm.

實施例及比較例中之表面電阻率係將成形為片狀之抗靜電性樹脂組合物於23℃、濕度50%之恆溫室中靜置24小時後,使用SIMCO JAPAN股份有限公司製造之簡易型表面電阻計「ST-3」而測定。 擠出之片材樣品之表面電阻率為各正面與反面之擠出方向(MD)與擠出垂直方向(TD)之測定值之平均值。The surface resistivity in the examples and comparative examples is that after the antistatic resin composition formed into a sheet was left for 24 hours in a constant temperature room at 23°C and a humidity of 50%, a simple type manufactured by SIMCO JAPAN Co., Ltd. was used. The surface resistivity meter "ST-3" was used for measurement. The surface resistivity of the extruded sheet samples was the average of the measured values in the extrusion direction (MD) and the extrusion perpendicular direction (TD) for each of the front and back sides.

(抗靜電性樹脂組合物之射出成形與霧值) 抗靜電性樹脂組合物之霧值之評價係使用藉由射出成形而獲得之平板。 射出成形係使用日精樹脂工業股份有限公司製造之混合(hybrid)型射出成形機FNX110III-18A(鎖模壓力110噸),模具係使用厚度1 mm,短邊100 mm,長邊150 mm且短邊側具有膜狀澆口之鏡面拋光之平板模具,於缸體溫度210℃、模具溫度50℃下對短射點增加射出壓力5%而獲得1 mm厚之平板成形體。 成形循環係以射出7秒、冷卻25秒實施。 再者,僅(a)-5調配組成於缸體溫度230℃下實施。(Injection molding and haze value of antistatic resin composition) For evaluation of the haze value of the antistatic resin composition, a flat plate obtained by injection molding was used. The injection molding was performed using a hybrid injection molding machine FNX110III-18A (clamping pressure 110 tons) manufactured by Nissei Plastics Co., Ltd. The mold used was 1 mm thick, 100 mm short side, 150 mm long side and 150 mm short side. For a mirror-polished flat mold with a film gate on the side, at a cylinder temperature of 210°C and a mold temperature of 50°C, the injection pressure was increased by 5% for the short shot point to obtain a flat molded body with a thickness of 1 mm. The molding cycle was performed with injection for 7 seconds and cooling for 25 seconds. In addition, only (a)-5 mix|blended composition was implemented at the cylinder temperature of 230 degreeC.

將上述射出成形中獲得之1 mm厚之成形品切出適當之大小,作為測定用試驗片,使用Suga Test Instruments製造之測霧計HZ-1型進行霧值之評價(單位:%)。 再者,於霧值超過40%之情形時,亦如ISO14782中明確記載,無法進行正確之測定,故而實施例、比較例之結果記為「超過40(不透明)」。The 1 mm-thick molded product obtained by the above injection molding was cut out to an appropriate size, and as a test piece for measurement, the haze value (unit: %) was evaluated using a haze meter HZ-1 manufactured by Suga Test Instruments. In addition, when the haze value exceeds 40%, as clearly stated in ISO14782, accurate measurement cannot be performed, so the results of Examples and Comparative Examples are described as "more than 40 (opaque)".

[實施例1~34、比較例1~24] 使用上述[表1]中所示之乙烯基芳香族烴系樹脂(a)-1~7及供體-受體系分子化合物(c)-1、以及上述[表2]中所示之上述製造例1~8之嵌段共聚物(b)-1~8,使用上述雙軸擠出機進行熔融混練,藉由單階段加工而獲得各樹脂組合物,測定藉由上述單軸T模擠出機而獲得之厚0.25 mm之片狀抗靜電性樹脂組合物之表面電阻率,進而,使用藉由上述射出成形機而獲得之1 mm厚之平板測定霧值。 測定結果示於下述[表3]及[表4]。 再者,表中,於表面電阻率達到1×1012 Ω/□以下之情形時,記載其實際之測定值,另一方面,於未達到1×1012 Ω/□以下之情形時,記為「Out」以表示處於可表現抗靜電性能之表面電阻率之範圍外。[Examples 1 to 34, Comparative Examples 1 to 24] The vinyl aromatic hydrocarbon resins (a)-1 to 7 and the donor-acceptor molecular compound (c)-1 shown in the above [Table 1] were used , and the block copolymers (b)-1 to 8 of the above production examples 1 to 8 shown in the above [Table 2] were melt-kneaded using the above-mentioned twin-screw extruder, and each resin was obtained by single-stage processing For the composition, the surface resistivity of the sheet-like antistatic resin composition with a thickness of 0.25 mm obtained by the above-mentioned uniaxial T-die extruder was measured, and a 1 mm thick sheet-like composition obtained by the above-mentioned injection molding machine was used. The flat plate measures the haze value. The measurement results are shown in the following [Table 3] and [Table 4]. In addition, in the table, when the surface resistivity is 1×10 12 Ω/□ or less, the actual measured value is recorded, and on the other hand, when the surface resistivity is not 1×10 12 Ω/□ or less, it is recorded. It is "Out" to indicate that it is outside the range of surface resistivity that can exhibit antistatic properties.

[表3]       乙烯基芳香族烴系樹脂(a) 嵌段共聚物(b) MFR比較 供體-受體系分子化合物(c) 表面電阻值 Ω/□ 霧值 % 實施例1 聚合物種類 - (b)-2 - (c)-1 1.0×1010 1.0 調配比率(質量%) 0 96.1 3.9 實施例2 聚合物種類 - (b)-2 - (c)-1 7.9×109 0.9 調配比率(質量%) 0 98.0 2.0 實施例3 聚合物種類 - (b)-2 - (c)-1 2.2×1010 0.8 調配比率(質量%) 0 99.0 1.0 實施例4 聚合物種類 - (b)-2 - (c)-1 7.9×1010 0.7 調配比率(質量%) 0 99.5 0.5 比較例1 聚合物種類 - (b)-2 - (c)-1 Out 0.6 調配比率(質量%) 0 99.8 0.2 實施例5 聚合物種類 (a)-1 (b)-2 - (c)-1 1.3×1011 1.3 調配比率(質量%) 28.9 70.6 0.5 實施例6 聚合物種類 (a)-2 (b)-2 - (c)-1 1.6×1011 1.2 調配比率(質量%) 28.9 70.6 0.5 實施例7 聚合物種類 (a)-1 (b)-2 a<b (c)-1 2.8×1010 2.1 調配比率(質量%) 31.4 63.8 4.8 實施例8 聚合物種類 (a)-1 (b)-2 a<b (c)-1 3.2×1010 1.9 調配比率(質量%) 31.7 64.4 3.9 實施例9 聚合物種類 (a)-1 (b)-2 a<b (c)-1 2.8×1010 1.8 調配比率(質量%) 32.0 65.0 3.0 實施例10 聚合物種類 (a)-1 (b)-2 a<b (c)-1 5.6×1010 1.7 調配比率(質量%) 32.4 65.7 1.9 實施例11 聚合物種類 (a)-1 (b)-2 a<b (c)-1 7.1×1010 1.6 調配比率(質量%) 32.7 66.3 1.0 實施例12 聚合物種類 (a)-1 (b)-2 a<b (c)-1 7.1×1010 1.6 調配比率(質量%) 33.0 66.5 0.5 比較例2 聚合物種類 (a)-1 (b)-2 a<b (c)-1 Out 1.6 調配比率(質量%) 32.9 66.9 0.2 實施例13 聚合物種類 (a)-2 (b)-2 a>b (c)-1 1.0×1010 1.5 調配比率(質量%) 32.7 66.3 1.0 比較例3 聚合物種類 (a)-2 (b)-2 a>b (c)-1 Out 1.3 調配比率(質量%) 32.8 66.7 0.5 實施例14 聚合物種類 (a)-1 (b)-2 a<b (c)-1 2.5×1010 2.0 調配比率(質量%) 62.5 33.7 3.8 實施例15 聚合物種類 (a)-1 (b)-2 a<b (c)-1 1.0×1011 1.8 調配比率(質量%) 63.7 34.3 2.0 實施例16 聚合物種類 (a)-1 (b)-2 a<b (c)-1 3.2×1010 1.6 調配比率(質量%) 64.4 34.7 0.9 實施例17 聚合物種類 (a)-1 (b)-2 a<b (c)-1 6.3×109 1.6 調配比率(質量%) 69.3 30.0 1.0 實施例18 聚合物種類 (a)-1 (b)-2 a<b (c)-1 7.9×1010 1.9 調配比率(質量%) 76.9 19.1 4.0 比較例4 聚合物種類 (a)-1 (b)-2 a<b (c)-1 Out 1.6 調配比率(質量%) 78.4 19.6 2.0 比較例5 聚合物種類 (a)-1 (b)-2 a<b (c)-1 Out 1.8 調配比率(質量%) 81.9 14.1 4.0 實施例19 聚合物種類 (a)-1 (b)-3 a<b (c)-1 2.0×1011 2.9 調配比率(質量%) 63.7 34.3 2.0 實施例20 聚合物種類 (a)-1 (b)-3 a<b (c)-1 1.3×1011 2.7 調配比率(質量%) 64.3 34.7 1.0 比較例6 聚合物種類 (a)-2 (b)-2 a>b (c)-1 Out 1.5 調配比率(質量%) 66.3 32.7 1.0 實施例21 聚合物種類 (a)-1 (b)-4 a<b (c)-1 2.5×1011 15 調配比率(質量%) 64.3 34.7 1.0 實施例22 聚合物種類 (a)-1 (b)-5 a<b (c)-1 1.0×1011 1.8 調配比率(質量%) 64.3 34.7 1.0 實施例23 聚合物種類 (a)-1 (b)-5 a<b (c)-1 1.6×1010 1.7 調配比率(質量%) 32.7 66.3 1.0 [table 3] Vinyl aromatic hydrocarbon resin (a) block copolymer (b) MFR comparison Donor-Acceptor Molecular Compound (c) Surface resistance Ω/□ fog value % Example 1 Type of polymer - (b)-2 - (c)-1 1.0×10 10 1.0 Blending ratio (mass %) 0 96.1 3.9 Example 2 Type of polymer - (b)-2 - (c)-1 7.9×10 9 0.9 Blending ratio (mass %) 0 98.0 2.0 Example 3 Type of polymer - (b)-2 - (c)-1 2.2×10 10 0.8 Blending ratio (mass %) 0 99.0 1.0 Example 4 Type of polymer - (b)-2 - (c)-1 7.9×10 10 0.7 Blending ratio (mass %) 0 99.5 0.5 Comparative Example 1 Type of polymer - (b)-2 - (c)-1 Out 0.6 Blending ratio (mass %) 0 99.8 0.2 Example 5 Type of polymer (a)-1 (b)-2 - (c)-1 1.3×10 11 1.3 Blending ratio (mass %) 28.9 70.6 0.5 Example 6 Type of polymer (a)-2 (b)-2 - (c)-1 1.6×10 11 1.2 Blending ratio (mass %) 28.9 70.6 0.5 Example 7 Type of polymer (a)-1 (b)-2 a<b (c)-1 2.8×10 10 2.1 Blending ratio (mass %) 31.4 63.8 4.8 Example 8 Type of polymer (a)-1 (b)-2 a<b (c)-1 3.2×10 10 1.9 Blending ratio (mass %) 31.7 64.4 3.9 Example 9 Type of polymer (a)-1 (b)-2 a<b (c)-1 2.8×10 10 1.8 Blending ratio (mass %) 32.0 65.0 3.0 Example 10 Type of polymer (a)-1 (b)-2 a<b (c)-1 5.6×10 10 1.7 Blending ratio (mass %) 32.4 65.7 1.9 Example 11 Type of polymer (a)-1 (b)-2 a<b (c)-1 7.1×10 10 1.6 Blending ratio (mass %) 32.7 66.3 1.0 Example 12 Type of polymer (a)-1 (b)-2 a<b (c)-1 7.1×10 10 1.6 Blending ratio (mass %) 33.0 66.5 0.5 Comparative Example 2 Type of polymer (a)-1 (b)-2 a<b (c)-1 Out 1.6 Blending ratio (mass %) 32.9 66.9 0.2 Example 13 Type of polymer (a)-2 (b)-2 a>b (c)-1 1.0×10 10 1.5 Blending ratio (mass %) 32.7 66.3 1.0 Comparative Example 3 Type of polymer (a)-2 (b)-2 a>b (c)-1 Out 1.3 Blending ratio (mass %) 32.8 66.7 0.5 Example 14 Type of polymer (a)-1 (b)-2 a<b (c)-1 2.5×10 10 2.0 Blending ratio (mass %) 62.5 33.7 3.8 Example 15 Type of polymer (a)-1 (b)-2 a<b (c)-1 1.0×10 11 1.8 Blending ratio (mass %) 63.7 34.3 2.0 Example 16 Type of polymer (a)-1 (b)-2 a<b (c)-1 3.2×10 10 1.6 Blending ratio (mass %) 64.4 34.7 0.9 Example 17 Type of polymer (a)-1 (b)-2 a<b (c)-1 6.3×10 9 1.6 Blending ratio (mass %) 69.3 30.0 1.0 Example 18 Type of polymer (a)-1 (b)-2 a<b (c)-1 7.9×10 10 1.9 Blending ratio (mass %) 76.9 19.1 4.0 Comparative Example 4 Type of polymer (a)-1 (b)-2 a<b (c)-1 Out 1.6 Blending ratio (mass %) 78.4 19.6 2.0 Comparative Example 5 Type of polymer (a)-1 (b)-2 a<b (c)-1 Out 1.8 Blending ratio (mass %) 81.9 14.1 4.0 Example 19 Type of polymer (a)-1 (b)-3 a<b (c)-1 2.0×10 11 2.9 Blending ratio (mass %) 63.7 34.3 2.0 Example 20 Type of polymer (a)-1 (b)-3 a<b (c)-1 1.3×10 11 2.7 Blending ratio (mass %) 64.3 34.7 1.0 Comparative Example 6 Type of polymer (a)-2 (b)-2 a>b (c)-1 Out 1.5 Blending ratio (mass %) 66.3 32.7 1.0 Example 21 Type of polymer (a)-1 (b)-4 a<b (c)-1 2.5×10 11 15 Blending ratio (mass %) 64.3 34.7 1.0 Example 22 Type of polymer (a)-1 (b)-5 a<b (c)-1 1.0×10 11 1.8 Blending ratio (mass %) 64.3 34.7 1.0 Example 23 Type of polymer (a)-1 (b)-5 a<b (c)-1 1.6×10 10 1.7 Blending ratio (mass %) 32.7 66.3 1.0

[表4]       乙烯基芳香族烴系樹脂(a) 嵌段共聚物(b) MFR比較 供體-受體系分子化合物(c) 表面電阻值 Ω/□ 霧值 % 比較例7 聚合物種類 (a)-1 (b)-6 a<b (c)-1 Out 1.6 調配比率(質量%) 32.7 66.3 1.0 比較例8 聚合物種類 - (b)-6 - (c)-1 Out 0.8 調配比率(質量%) 0 99 1.0 實施例24 聚合物種類 (a)-1 (b)-7 a<b (c)-1 2.5×1011 超過40 (不透明) 調配比率(質量%) 63.7 34.3 2.0 實施例25 聚合物種類 (a)-1 (b)-7 a<b (c)-1 1.3×1011 超過40 (不透明) 調配比率(質量%) 64.3 34.7 1.0 比較例9 聚合物種類 (a)-1 (b)-7 a<b (c)-1 Out 超過40 (不透明) 調配比率(質量%) 78.4 19.6 2.0 比較例10 聚合物種類 (a)-1 (b)-8 a<b (c)-1 Out 超過40 (不透明) 調配比率(質量%) 68.0 28.0 4.0 比較例11 聚合物種類 (a)-1 (b)-8 a<b (c)-1 Out 超過40 (不透明) 調配比率(質量%) 63.7 34.3 2.0 實施例26 聚合物種類 (a)-3 (b)-1 a<b (c)-1 7.1×1010 超過40 (不透明) 調配比率(質量%) 32.7 66.3 1.0 實施例27 聚合物種類 (a)-3 (b)-2 a<b (c)-1 1.3×1011 超過40 (不透明) 調配比率(質量%) 63.7 34.3 2.0 實施例28 聚合物種類 (a)-3 (b)-7 a<b (c)-1 1.3×1011 超過40 (不透明) 調配比率(質量%) 73.5 24.5 2.0 實施例29 聚合物種類 (a)-4 (b)-1 a>b (c)-1 1.6×1010 0.9 調配比率(質量%) 19.8 79.2 1.0 比較例12 聚合物種類 (a)-4 (b)-1 a>b (c)-1 Out 1.1 調配比率(質量%) 38.5 57.5 4.0 比較例13 聚合物種類 (a)-4 (b)-1 a>b (c)-1 Out 1.1 調配比率(質量%) 57.5 38.5 4.0 實施例30 聚合物種類 (a)-5 (b)-2 a<b (c)-1 1.3×1011 1.0 調配比率(質量%) 19.8 79.2 1.0 實施例31 聚合物種類 (a)-5 (b)-2 a<b (c)-1 7.1×1010 1.3 調配比率(質量%) 38.5 57.5 4.0 比較例14 聚合物種類 (a)-5 (b)-2 a<b (c)-1 Out 1.3 調配比率(質量%) 57.5 38.5 4.0 實施例32 聚合物種類 (a)-6 (b)-1 a<b (c)-1 1.0×1011 1.1 調配比率(質量%) 19.8 79.2 1.0 實施例33 聚合物種類 (a)-6 (b)-1 a<b (c)-1 3.2×1010 1.4 調配比率(質量%) 38.5 57.5 4.0 比較例15 聚合物種類 (a)-6 (b)-1 a<b (c)-1 Out 1.4 調配比率(質量%) 57.5 38.5 4.0 實施例34 聚合物種類 (a)-7 (b)-1 a>b (c)-1 1.6×1011 1.0 調配比率(質量%) 19.8 79.2 1.0 比較例16 聚合物種類 (a)-7 (b)-1 a>b (c)-1 Out 1.3 調配比率(質量%) 38.5 57.5 4.0 比較例17 聚合物種類 (a)-7 (b)-1 a>b (c)-1 Out 1.3 調配比率(質量%) 57.5 38.5 4.0 比較例18 聚合物種類 (a)-1 - - (c)-1 Out 0.9 調配比率(質量%) 95.1 0 4.9 比較例19 聚合物種類 (a)-2 - - (c)-1 Out 0.9 調配比率(質量%) 95.1 0 4.9 比較例20 聚合物種類 (a)-3 - - (c)-1 Out 超過40 (不透明) 調配比率(質量%) 95.1 0 4.9 比較例21 聚合物種類 (a)-4 - - (c)-1 Out 0.9 調配比率(質量%) 95.1 0 4.9 比較例22 聚合物種類 (a)-5 - - (c)-1 Out 1.0 調配比率(質量%) 95.1 0 4.9 比較例23 聚合物種類 (a)-6 - - (c)-1 Out 1.0 調配比率(質量%) 95.1 0 4.9 比較例24 聚合物種類 (a)-7 - - (c)-1 Out 1.0 調配比率(質量%) 95.1 0 4.9 [Table 4] Vinyl aromatic hydrocarbon resin (a) block copolymer (b) MFR comparison Donor-Acceptor Molecular Compound (c) Surface resistance Ω/□ fog value % Comparative Example 7 Type of polymer (a)-1 (b)-6 a<b (c)-1 Out 1.6 Blending ratio (mass %) 32.7 66.3 1.0 Comparative Example 8 Type of polymer - (b)-6 - (c)-1 Out 0.8 Blending ratio (mass %) 0 99 1.0 Example 24 Type of polymer (a)-1 (b)-7 a<b (c)-1 2.5×10 11 over 40 (opaque) Blending ratio (mass %) 63.7 34.3 2.0 Example 25 Type of polymer (a)-1 (b)-7 a<b (c)-1 1.3×10 11 over 40 (opaque) Blending ratio (mass %) 64.3 34.7 1.0 Comparative Example 9 Type of polymer (a)-1 (b)-7 a<b (c)-1 Out over 40 (opaque) Blending ratio (mass %) 78.4 19.6 2.0 Comparative Example 10 Type of polymer (a)-1 (b)-8 a<b (c)-1 Out over 40 (opaque) Blending ratio (mass %) 68.0 28.0 4.0 Comparative Example 11 Type of polymer (a)-1 (b)-8 a<b (c)-1 Out over 40 (opaque) Blending ratio (mass %) 63.7 34.3 2.0 Example 26 Type of polymer (a)-3 (b)-1 a<b (c)-1 7.1×10 10 over 40 (opaque) Blending ratio (mass %) 32.7 66.3 1.0 Example 27 Type of polymer (a)-3 (b)-2 a<b (c)-1 1.3×10 11 over 40 (opaque) Blending ratio (mass %) 63.7 34.3 2.0 Example 28 Type of polymer (a)-3 (b)-7 a<b (c)-1 1.3×10 11 over 40 (opaque) Blending ratio (mass %) 73.5 24.5 2.0 Example 29 Type of polymer (a)-4 (b)-1 a>b (c)-1 1.6×10 10 0.9 Blending ratio (mass %) 19.8 79.2 1.0 Comparative Example 12 Type of polymer (a)-4 (b)-1 a>b (c)-1 Out 1.1 Blending ratio (mass %) 38.5 57.5 4.0 Comparative Example 13 Type of polymer (a)-4 (b)-1 a>b (c)-1 Out 1.1 Blending ratio (mass %) 57.5 38.5 4.0 Example 30 Type of polymer (a)-5 (b)-2 a<b (c)-1 1.3×10 11 1.0 Blending ratio (mass %) 19.8 79.2 1.0 Example 31 Type of polymer (a)-5 (b)-2 a<b (c)-1 7.1×10 10 1.3 Blending ratio (mass %) 38.5 57.5 4.0 Comparative Example 14 Type of polymer (a)-5 (b)-2 a<b (c)-1 Out 1.3 Blending ratio (mass %) 57.5 38.5 4.0 Example 32 Type of polymer (a)-6 (b)-1 a<b (c)-1 1.0×10 11 1.1 Blending ratio (mass %) 19.8 79.2 1.0 Example 33 Type of polymer (a)-6 (b)-1 a<b (c)-1 3.2×10 10 1.4 Blending ratio (mass %) 38.5 57.5 4.0 Comparative Example 15 Type of polymer (a)-6 (b)-1 a<b (c)-1 Out 1.4 Blending ratio (mass %) 57.5 38.5 4.0 Example 34 Type of polymer (a)-7 (b)-1 a>b (c)-1 1.6×10 11 1.0 Blending ratio (mass %) 19.8 79.2 1.0 Comparative Example 16 Type of polymer (a)-7 (b)-1 a>b (c)-1 Out 1.3 Blending ratio (mass %) 38.5 57.5 4.0 Comparative Example 17 Type of polymer (a)-7 (b)-1 a>b (c)-1 Out 1.3 Blending ratio (mass %) 57.5 38.5 4.0 Comparative Example 18 Type of polymer (a)-1 - - (c)-1 Out 0.9 Blending ratio (mass %) 95.1 0 4.9 Comparative Example 19 Type of polymer (a)-2 - - (c)-1 Out 0.9 Blending ratio (mass %) 95.1 0 4.9 Comparative Example 20 Type of polymer (a)-3 - - (c)-1 Out over 40 (opaque) Blending ratio (mass %) 95.1 0 4.9 Comparative Example 21 Type of polymer (a)-4 - - (c)-1 Out 0.9 Blending ratio (mass %) 95.1 0 4.9 Comparative Example 22 Type of polymer (a)-5 - - (c)-1 Out 1.0 Blending ratio (mass %) 95.1 0 4.9 Comparative Example 23 Type of polymer (a)-6 - - (c)-1 Out 1.0 Blending ratio (mass %) 95.1 0 4.9 Comparative Example 24 Type of polymer (a)-7 - - (c)-1 Out 1.0 Blending ratio (mass %) 95.1 0 4.9

[製造例9~14] 使用嵌段共聚物(b)、供體-受體系分子化合物(c)及乙烯基芳香族烴系樹脂(a),且以將母料總量設為100質量%時成分(c)成為5質量%以上20質量%以下之方式,依據下述[表5]所示之調配比率,藉由上述雙軸擠出機進行熔融混練,進行含有高濃度之成分(c)之母料之製造。[Production Examples 9 to 14] The block copolymer (b), the donor-acceptor molecular compound (c) and the vinyl aromatic hydrocarbon resin (a) are used, and the component (c) is 5 when the total amount of the master batch is 100% by mass In the aspect of not less than mass % and not more than 20 mass %, according to the blending ratio shown in the following [Table 5], it is melt-kneaded with the above-mentioned twin-screw extruder to produce a master batch containing the high-concentration component (c).

[表5]             乙烯基芳香族烴系樹脂(a) 嵌段共聚物(b) 供體-受體系分子化合物(c) 製造例9 聚合物種類 - (b)-2 (c)-1 調配比率(質量%) 0 94 6 製造例10 聚合物種類 - (b)-2 (c)-1 調配比率(質量%) 0 80 20 製造例11 聚合物種類 (a)-1 (b)-2 (c)-1 調配比率(質量%) 30 60 10 製造例12 聚合物種類 (a)-1 (b)-2 (c)-1 調配比率(質量%) 27 53 20 製造例13 聚合物種類 (a)-3 (b)-7 (c)-1 調配比率(質量%) 30 60 10 製造例14 聚合物種類 (a)-1 - (c)-1 調配比率(質量%) 90 0 10 [table 5] Vinyl aromatic hydrocarbon resin (a) block copolymer (b) Donor-Acceptor Molecular Compound (c) Production Example 9 Type of polymer - (b)-2 (c)-1 Blending ratio (mass %) 0 94 6 Manufacturing Example 10 Type of polymer - (b)-2 (c)-1 Blending ratio (mass %) 0 80 20 Manufacturing Example 11 Type of polymer (a)-1 (b)-2 (c)-1 Blending ratio (mass %) 30 60 10 Production Example 12 Type of polymer (a)-1 (b)-2 (c)-1 Blending ratio (mass %) 27 53 20 Production Example 13 Type of polymer (a)-3 (b)-7 (c)-1 Blending ratio (mass %) 30 60 10 Production Example 14 Type of polymer (a)-1 - (c)-1 Blending ratio (mass %) 90 0 10

[實施例35~44] 藉由於上述[製造例9~14]中製造之含有高濃度之成分(c)之母料中調配乙烯基芳香族烴系樹脂(a)及/或嵌段共聚物(b)而將母料稀釋的二階段加工之方法,藉由上述單軸T模擠出機而獲得厚0.25 mm之片狀樹脂組合物,測定該片狀樹脂組合物之表面電阻率。又,使用藉由上述射出成形機而獲得之1 mm厚之平板測定霧值。 合併使用之母料之製造例,將測定結果示於下述[表6]。[Examples 35 to 44] The master batch was prepared by blending the vinyl aromatic hydrocarbon resin (a) and/or the block copolymer (b) into the master batch containing the high-concentration component (c) produced in the above [Production Examples 9 to 14]. In the method of diluted two-stage processing, a sheet-like resin composition with a thickness of 0.25 mm was obtained by the above-mentioned uniaxial T-die extruder, and the surface resistivity of the sheet-like resin composition was measured. Moreover, the haze value was measured using the flat plate of 1 mm thickness obtained by the said injection molding machine. The production examples of the master batches used in combination are shown in the following [Table 6].

[表6]             高濃度母料 乙烯基芳香族烴系樹脂(a) 嵌段共聚物(b) 表面電阻值 Ω/□ 霧值 % 作為比較之相同組成 實施例35 聚合物種類 製造例9 (a)-1 (b)-2 6.3×109 1.7 實施例9(2.8×1010 ) 調配比率(質量%) 50.0 32.0 18.0 實施例36 聚合物種類 製造例9 (a)-2 (b)-2 7.9×109 1.4 實施例13(1.0×1010 ) 調配比率(質量%) 16.7 32.7 50.6 實施例37 聚合物種類 製造例10 (a)-1 (b)-2 1.3×1010 1.6 實施例15(1.0×1011 ) 調配比率(質量%) 10.0 63.7 26.3 實施例38 聚合物種類 製造例10 (a)-1 (b)-2 1.6×1010 1.8 實施例19(7.9×1010 ) 調配比率(質量%) 20.0 76.9 3.1 實施例39 聚合物種類 製造例11 (a)-1 (b)-2 2.8×1010 1.5 實施例11(7.1×1010 ) 調配比率(質量%) 10.0 29.7 60.3 實施例40 聚合物種類 製造例11 (a)-1 (b)-2 1.0×1010 1.8 實施例14(2.5×1010 ) 調配比率(質量%) 38.0 51.1 10.9 實施例41 聚合物種類 製造例12 (a)-1 (b)-2 1.3×1010 2.0 實施例7(2.8×1010 ) 調配比率(質量%) 24.0 24.9 51.1 實施例42 聚合物種類 製造例12 (a)-1 (b)-2 2.5×1010 1.7 實施例10(5.6×1010 ) 調配比率(質量%) 9.5 29.8 60.7 實施例43 聚合物種類 製造例13 (a)-3 (b)-7 3.2×1010 超過40 (不透明) 實施例28(1.3×1011 ) 調配比率(質量%) 20 67.5 12.5 實施例44 聚合物種類 製造例14 (a)-1 (b)-2 1.0×1011 1.6 實施例11(7.1×1010 ) 調配比率(質量%) 20 13.7 66.3 [Table 6] High concentration masterbatch Vinyl aromatic hydrocarbon resin (a) block copolymer (b) Surface resistance Ω/□ fog value % same composition for comparison Example 35 Type of polymer Production Example 9 (a)-1 (b)-2 6.3×10 9 1.7 Example 9 (2.8×10 10 ) Blending ratio (mass %) 50.0 32.0 18.0 Example 36 Type of polymer Production Example 9 (a)-2 (b)-2 7.9×10 9 1.4 Example 13 (1.0×10 10 ) Blending ratio (mass %) 16.7 32.7 50.6 Example 37 Type of polymer Manufacturing Example 10 (a)-1 (b)-2 1.3×10 10 1.6 Example 15 (1.0×10 11 ) Blending ratio (mass %) 10.0 63.7 26.3 Example 38 Type of polymer Manufacturing Example 10 (a)-1 (b)-2 1.6×10 10 1.8 Example 19 (7.9×10 10 ) Blending ratio (mass %) 20.0 76.9 3.1 Example 39 Type of polymer Manufacturing Example 11 (a)-1 (b)-2 2.8×10 10 1.5 Example 11 (7.1×10 10 ) Blending ratio (mass %) 10.0 29.7 60.3 Example 40 Type of polymer Manufacturing Example 11 (a)-1 (b)-2 1.0×10 10 1.8 Example 14 (2.5×10 10 ) Blending ratio (mass %) 38.0 51.1 10.9 Example 41 Type of polymer Production Example 12 (a)-1 (b)-2 1.3×10 10 2.0 Example 7 (2.8×10 10 ) Blending ratio (mass %) 24.0 24.9 51.1 Example 42 Type of polymer Production Example 12 (a)-1 (b)-2 2.5×10 10 1.7 Example 10 (5.6×10 10 ) Blending ratio (mass %) 9.5 29.8 60.7 Example 43 Type of polymer Production Example 13 (a)-3 (b)-7 3.2×10 10 over 40 (opaque) Example 28 (1.3×10 11 ) Blending ratio (mass %) 20 67.5 12.5 Example 44 Type of polymer Production Example 14 (a)-1 (b)-2 1.0×10 11 1.6 Example 11 (7.1×10 10 ) Blending ratio (mass %) 20 13.7 66.3

上述[表6]中所示之[實施例35]係經由母料藉由二階段加工而製造之抗靜電性樹脂組合物,但與上述[表3]中所示之[實施例9]之最終組成自身相同。 同樣地,[實施例36]與[實施例13]、[實施例37]與[實施例15]、[實施例38]與[實施例19]、[實施例39]及[實施例44]與[實施例11]、[實施例40]與[實施例14]、[實施例41]與[實施例7]、[實施例42]與[實施例10]、[實施例43]與[實施例28]之各自之最終組成自身為相同之抗靜電性樹脂組合物。The [Example 35] shown in the above [Table 6] is an antistatic resin composition produced by two-stage processing via a master batch, but it is different from the [Example 9] shown in the above [Table 3]. The final composition is identical to itself. Similarly, [Example 36] and [Example 13], [Example 37] and [Example 15], [Example 38] and [Example 19], [Example 39] and [Example 44] with [Example 11], [Example 40] with [Example 14], [Example 41] with [Example 7], [Example 42] with [Example 10], [Example 43] with [Example 7] The respective final compositions of Example 28] are themselves the same antistatic resin compositions.

於經由母料之二階段加工之情形時,透明性存在霧值0.1(%)左右之改善或相同。 關於表面電阻率,可知於任一實施例中,經由母料之二階段加工之情形時均表現更低之表面電阻率。 暫時製作成分(c)之高濃度母料後使用成分(a)及/或成分(b)將其稀釋的二階段加工之情形時,表面電阻率進一步下降,結果可製造更優異之抗靜電性樹脂組合物。 換言之,可知為表現相同表面電阻率所需之成分(c)之調配量亦可得以削減,亦可謀求力學特性與經濟性之兼顧。In the case of the two-stage processing of the master batch, the transparency has an improvement of about 0.1 (%) or the same haze value. Regarding the surface resistivity, it can be seen that in any of the examples, a lower surface resistivity is exhibited in the case of the two-stage processing of the master batch. In the case of a two-stage process in which a high-concentration master batch of the component (c) is temporarily prepared and then diluted with the component (a) and/or the component (b), the surface resistivity is further reduced, and as a result, more excellent antistatic properties can be produced. resin composition. In other words, it can be seen that the compounding amount of the component (c) required to express the same surface resistivity can also be reduced, and both mechanical properties and economical efficiency can be achieved.

又,藉由對比實施例44與實施例35~43可明確:藉由於製作該母料時使嵌段共聚物(b)及供體-受體系分子化合物(c)成為必需成分,表面電阻率下降之效果優異。 具體而言,於不使用嵌段共聚物(b),僅以乙烯基芳香族烴系樹脂(a)及供體-受體系分子化合物(c)製造高濃度母料之情形時,比較[實施例11]、[實施例39]及[實施例44]之3例可明確如下結果:未獲得藉由母料法之表面電阻率之改善效果,進行單階段混練並未有所改變。In addition, by comparing Example 44 and Examples 35 to 43, it is clear that by making the block copolymer (b) and the donor-acceptor molecular compound (c) essential components in the preparation of the master batch, the surface resistivity The effect of lowering is excellent. Specifically, in the case of producing a high-concentration master batch using only the vinyl aromatic hydrocarbon resin (a) and the donor-acceptor molecular compound (c) without using the block copolymer (b), the comparison [implementation The three examples of Example 11], [Example 39] and [Example 44] can clarify the following results: the improvement effect of surface resistivity by the master batch method was not obtained, and the single-stage kneading did not change.

根據以上結果,實施例之抗靜電性樹脂組合物表現所期望之表面電阻率。 另一方面,比較例1~24揭示了即使調配較多原本為表現抗靜電性而調配之供體-受體系分子化合物(c),表面電阻率亦未達到1×1012 Ω/□以下,難以獲得本發明之抗靜電性樹脂組合物。According to the above results, the antistatic resin compositions of Examples exhibited desired surface resistivity. On the other hand, Comparative Examples 1 to 24 revealed that the surface resistivity did not reach 1×10 12 Ω/□ or less even if a large amount of the donor-acceptor molecular compound (c) was originally prepared to exhibit antistatic properties. It is difficult to obtain the antistatic resin composition of the present invention.

又,若比較以單階段獲得抗靜電性樹脂組合物之製造方法,與製造使成分(b)及成分(c)成為必需成分之高濃度母料後,以其為基礎,使用成分(a)及/或成分(b)加以稀釋,藉此獲得抗靜電性樹脂組合物之製造方法,則可知:於最終組成完全相同之上述實施例彼此之比較中,後者之藉由經過高濃度母料製造之二階段加工而獲得之抗靜電性樹脂組合物之表面電阻率進一步減低,存在良好之傾向。其原因在於作為成分(c)之供體-受體系分子化合物之分散進一步微分散化,添加效果提高。In addition, when comparing the production method of obtaining the antistatic resin composition in one stage, and the production of a high-concentration masterbatch in which the components (b) and (c) are essential components, the component (a) is used as a basis. And/or the component (b) is diluted to obtain the manufacturing method of the antistatic resin composition, it can be seen that: in the comparison of the above-mentioned examples with identical final compositions, the latter is produced by passing through a high-concentration masterbatch. The surface resistivity of the antistatic resin composition obtained by the two-stage processing is further reduced, and there is a good tendency. The reason for this is that the dispersion of the molecular compound of the donor-acceptor system as the component (c) is further finely dispersed, and the effect of addition is improved.

[實施例45] 將上述實施例40中獲得之抗靜電性樹脂組合物作為40 μm厚之正反面層,於核心層中利用於乙烯基芳香族烴系樹脂(a)-3 90質量%中以10質量%之比率摻合嵌段共聚物(b)-1所獲得之組合物,使用具備T模之多層片材擠出機成形為0.3 mm厚之多層擠出片材。 T模多層片材成形係使用Research Laboratory of Plastics Technology股份有限公司製造之多層片材擠出成形機GT-40-28-A+UT-25-28-H(單螺桿,附馬多克(Maddock)混練,螺桿直徑40 mm(核心層)+25 mm(正反面層),L/D=28,T模寬度400 mm,附褶皺之輥),於缸體溫度210℃、輥溫度70℃下,調整螺桿轉速與輥牽引速度,藉此製作上述0.3 mm厚之多層擠出片材。 將成形之片材於110℃下加熱,藉由加壓成形,獲得可收納電子零件之搬送用托盤。 關於所獲得之電子零件搬送用托盤,可確認:其表面電阻率為10之10次方多而具備抗靜電性優異之抗靜電性能,具備適度之剛性與耐熱變形性,正反面層與核心層之層間接著強度亦良好從而牢固地接著而不會自端面剝離,具有即使刻意彎折亦不容易斷裂之卓越強度,因此可較佳地供至實用。[Example 45] The antistatic resin composition obtained in the above Example 40 was used as the front and back layers of 40 μm thickness, and was used in the core layer in the vinyl aromatic hydrocarbon resin (a)-3 90 mass % at 10 mass % The composition obtained by blending the block copolymer (b)-1 at a ratio of 1 to 2 was formed into a 0.3 mm thick multilayer extruded sheet using a multilayer sheet extruder equipped with a T die. The T-die multi-layer sheet was formed by using a multi-layer sheet extrusion machine GT-40-28-A+UT-25-28-H (single screw, with Maddock (Maddock) manufactured by Research Laboratory of Plastics Technology Co., Ltd. ) kneading, screw diameter 40 mm (core layer) + 25 mm (front and back layers), L/D = 28, T-die width 400 mm, with a wrinkled roller), at a cylinder temperature of 210°C and a roller temperature of 70°C , adjust the screw speed and the roller pulling speed, thereby making the above-mentioned 0.3 mm thick multi-layer extruded sheet. The formed sheet was heated at 110° C. and press-molded to obtain a conveyance tray capable of accommodating electronic components. Regarding the obtained tray for transporting electronic parts, it was confirmed that the surface resistivity was as high as 10 to the 10th power, and it had antistatic properties excellent in antistatic properties, moderate rigidity and thermal deformation resistance, front and back layers and cores. The layer-to-layer adhesion strength is also good, so that it is firmly attached without peeling from the end face, and has excellent strength that is not easily broken even if it is deliberately bent, so it can be preferably used for practical use.

於本實施方式中,尤其針對苯乙烯系樹脂基質,對於供體-受體系分子化合物之基質樹脂組成之性能表現之選擇性與表現出抗靜電性能之樹脂組成圖已明確。 [產業上之可利用性]In this embodiment, especially for the styrene-based resin matrix, the selectivity of the performance of the matrix resin composition of the donor-acceptor molecular compound and the composition diagram of the resin showing antistatic properties have been clarified. [Industrial Availability]

對本發明之抗靜電性樹脂組合物而言,表面電阻率表現為1×1012 Ω/□以下,藉此發揮良好之抗靜電性,進而,作為表現抗靜電性能之物質之供體-受體系分子化合物對樹脂組合物之加工性或力學特性、光學特性之影響為最小限度,故而於樹脂組合物自身具有透明性之情形時,該抗靜電性樹脂組合物亦保持透明性,進而耐折強度等力學特性亦優異,製為兩種3層等之擠出多層片材時之層間接著強度亦優異,作為電子零件包裝成形品之材料而於產業上具有可利用性。 又,本發明之抗靜電性樹脂組合物作為載帶、料管、電子零件搬送用托盤等電子零件之包裝材之材料而於產業上具有可利用性。The antistatic resin composition of the present invention exhibits a surface resistivity of 1×10 12 Ω/□ or less, thereby exhibiting good antistatic properties, and further, as a donor-acceptor system for substances exhibiting antistatic properties The influence of the molecular compound on the processability, mechanical properties, and optical properties of the resin composition is minimal, so when the resin composition itself has transparency, the antistatic resin composition also maintains transparency, and thus the flexural strength It is also excellent in mechanical properties such as two types of three-layer extruded multi-layer sheets, and also has excellent interlayer adhesion strength, and is industrially applicable as a material for packaging molded products of electronic parts. Moreover, the antistatic resin composition of this invention has industrial applicability as a material of the packaging material of electronic parts, such as a carrier tape, a material tube, and the tray for electronic parts conveyance.

Claims (10)

一種抗靜電性樹脂組合物,其係含有 嵌段共聚物(b)、及 供體-受體系分子化合物(c)者,並且 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%, 將上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下。An antistatic resin composition containing block copolymer (b), and Donor-acceptor system molecular compound (c), and The above-mentioned block copolymer (b) is a block copolymer containing vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, and has a polymer block mainly composed of vinyl aromatic hydrocarbon monomer units, The vinyl aromatic hydrocarbon monomer unit is 30 to 90 mass %, and the conjugated diene monomer unit is 70 to 10 mass %, When the total amount of the block copolymer (b) and the donor-acceptor molecular compound (c) is 100 mass %, the content of the donor-acceptor molecular compound (c) is 0.5 mass % or more 5 mass % or less. 如請求項1之抗靜電性樹脂組合物,其表面電阻率為1×1012 Ω/□以下。The antistatic resin composition according to claim 1, which has a surface resistivity of 1×10 12 Ω/□ or less. 一種抗靜電性樹脂組合物,其係含有 乙烯基芳香族烴系樹脂(a)、 嵌段共聚物(b)、及 供體-受體系分子化合物(c)者,並且 上述嵌段共聚物(b)係含有乙烯基芳香族烴單體單元與共軛二烯單體單元之嵌段共聚物,具有以乙烯基芳香族烴單體單元為主體之聚合物嵌段,乙烯基芳香族烴單體單元為30~90質量%,共軛二烯單體單元為70~10質量%, 將上述乙烯基芳香族烴系樹脂(a)及上述嵌段共聚物(b)之合計量設為100質量%時,上述乙烯基芳香族烴系樹脂(a)之質量比為81質量%以下,上述嵌段共聚物(b)之質量比為19質量%以上且未達100質量%, 將上述乙烯基芳香族烴系樹脂(a)、上述嵌段共聚物(b)及上述供體-受體系分子化合物(c)之合計量設為100質量%時,上述供體-受體系分子化合物(c)之含量為0.5質量%以上5質量%以下, 表面電阻率為1×1012 Ω/□以下。An antistatic resin composition comprising a vinyl aromatic hydrocarbon resin (a), a block copolymer (b), and a donor-acceptor molecular compound (c), wherein the block copolymer ( b) is a block copolymer containing vinyl aromatic hydrocarbon monomer units and conjugated diene monomer units, having a polymer block with vinyl aromatic hydrocarbon monomer units as the main body, vinyl aromatic hydrocarbon monomer units The body unit is 30 to 90 mass %, the conjugated diene monomer unit is 70 to 10 mass %, and the total amount of the vinyl aromatic hydrocarbon resin (a) and the block copolymer (b) is 100. In the case of mass %, the mass ratio of the vinyl aromatic hydrocarbon resin (a) is 81 mass % or less, and the mass ratio of the block copolymer (b) is 19 mass % or more and less than 100 mass %. When the total amount of the aromatic hydrocarbon-based resin (a), the block copolymer (b), and the donor-acceptor molecular compound (c) is 100% by mass, the donor-acceptor molecular compound (c) ) is 0.5 mass % or more and 5 mass % or less, and the surface resistivity is 1×10 12 Ω/□ or less. 如請求項3之抗靜電性樹脂組合物,其中上述乙烯基芳香族烴系樹脂(a)係選自由 乙烯基芳香族烴單體之均聚物(a1)、 乙烯基芳香族烴單體之接枝共聚物(a2)、及 乙烯基芳香族烴單體單元與(甲基)丙烯酸及/或(甲基)丙烯酸烷基酯單體單元之無規共聚物(a3)所組成之群中之任一者。The antistatic resin composition according to claim 3, wherein the above vinyl aromatic hydrocarbon resin (a) is selected from Homopolymers of vinyl aromatic hydrocarbon monomers (a1), A graft copolymer of vinyl aromatic hydrocarbon monomer (a2), and Any of the group consisting of vinyl aromatic hydrocarbon monomer units and random copolymers (a3) of (meth)acrylic acid and/or (meth)acrylic acid alkyl ester monomer units. 如請求項3之抗靜電性樹脂組合物,其中於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中, 上述乙烯基芳香族烴系樹脂(a)之MFR(以下,記為MFRa)與上述嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足 下述(i)~(iv)之任一條件; <條件(i)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過0質量%且30質量%以下,上述(b)成分為70質量%以上且未達100質量%之情形時, 無論MFRa與MFRb之數值如何,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分均為0.5質量%以上5質量%以下; <條件(ii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過30質量%且50質量%以下,上述(b)成分為未達70質量%且50質量%以上之情形時,當為 MFRa<MFRb・・(式1) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.5質量%以上5質量%以下,當為 MFRa≧MFRb・・(式2) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過50質量%且70質量%以下,上述(b)成分為未達50質量%且30質量%以上之情形時,滿足 MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iv)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過70質量%且81質量%以下,上述(b)成分為未達30質量%且19質量%以上之情形時,滿足 MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。The antistatic resin composition of claim 3, wherein in the melt flow rate (MFR) under the conditions of 200°C and 5 kg load specified in ISO1133, The relationship between the MFR (hereinafter, referred to as MFRa) of the vinyl aromatic hydrocarbon-based resin (a) and the MFR (hereinafter, referred to as MFRb) of the block copolymer (b) is satisfied Any of the following conditions (i) to (iv); <Condition (i)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100% by mass, the above-mentioned (a) component is more than 0% by mass and 30% by mass or less, and the above-mentioned (b) component is 70% by mass or more and not more than 70% by mass. When it reaches 100% by mass, Regardless of the numerical values of MFRa and MFRb, when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is 100% by mass, the above-mentioned (c) component is 0.5% by mass or more and 5% by mass or less. ; <Condition (ii)> When the sum of the said (a) component and the said (b) component is made into 100 mass %, the said (a) component is more than 30 mass % and 50 mass % or less, and the said (b) component is less than 70 mass % and In the case of 50% by mass or more, it shall be MFRa<MFRb・・(Formula 1) When the relationship between the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.5 mass % or more and 5 mass % or less, which is MFRa≧MFRb・・(Formula 2) In the case of the relationship, when the sum of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less; <Condition (iii)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100 mass %, the above-mentioned (a) component is more than 50 mass % and 70 mass % or less, and the above-mentioned (b) component is less than 50 mass % and In the case of 30% by mass or more, it is satisfied MFRa<MFRb・・(Formula 1) When the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less; <Condition (iv)> When the sum of the said (a) component and the said (b) component is made into 100 mass %, the said (a) component exceeds 70 mass % and 81 mass % or less, and the said (b) component is less than 30 mass % and In the case of more than 19% by mass, it is satisfied MFRa<MFRb・・(Formula 1) When the total of the said (a) component, the said (b) component, and the said (c) component is made into 100 mass %, the said (c) component is 3 mass % or more and 5 mass % or less. 如請求項4之抗靜電性樹脂組合物,其中於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中, 上述乙烯基芳香族烴系樹脂(a)之MFR(以下,記為MFRa)與上述嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足 下述(i)~(iv)之任一條件; <條件(i)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過0質量%且30質量%以下,上述(b)成分為70質量%以上且未達100質量%之情形時, 無論MFRa與MFRb之數值如何,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分均為0.5質量%以上5質量%以下; <條件(ii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過30質量%且50質量%以下,上述(b)成分為未達70質量%且50質量%以上之情形時,當為 MFRa<MFRb・・(式1) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.5質量%以上5質量%以下,當為 MFRa≧MFRb・・(式2) 之關係時,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iii)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過50質量%且70質量%以下,上述(b)成分為未達50質量%且30質量%以上之情形時,滿足 MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為0.9質量%以上5質量%以下; <條件(iv)> 於將上述(a)成分及上述(b)成分之合計設為100質量%時,上述(a)成分為超過70質量%且81質量%以下,上述(b)成分為未達30質量%且19質量%以上之情形時,滿足 MFRa<MFRb・・(式1) 之關係,將上述(a)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。The antistatic resin composition of claim 4, wherein in the melt flow rate (MFR) under the conditions of 200°C and 5 kg load specified in ISO1133, The relationship between the MFR (hereinafter, referred to as MFRa) of the vinyl aromatic hydrocarbon-based resin (a) and the MFR (hereinafter, referred to as MFRb) of the block copolymer (b) is satisfied Any of the following conditions (i) to (iv); <Condition (i)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100% by mass, the above-mentioned (a) component is more than 0% by mass and 30% by mass or less, and the above-mentioned (b) component is 70% by mass or more and not more than 70% by mass. When it reaches 100% by mass, Regardless of the numerical values of MFRa and MFRb, when the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is 100% by mass, the above-mentioned (c) component is 0.5% by mass or more and 5% by mass or less. ; <Condition (ii)> When the sum of the said (a) component and the said (b) component is made into 100 mass %, the said (a) component is more than 30 mass % and 50 mass % or less, and the said (b) component is less than 70 mass % and In the case of 50% by mass or more, it shall be MFRa<MFRb・・(Formula 1) When the relationship between the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.5 mass % or more and 5 mass % or less, which is MFRa≧MFRb・・(Formula 2) In the case of the relationship, when the sum of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less; <Condition (iii)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100 mass %, the above-mentioned (a) component is more than 50 mass % and 70 mass % or less, and the above-mentioned (b) component is less than 50 mass % and In the case of 30% by mass or more, it is satisfied MFRa<MFRb・・(Formula 1) When the total of the above-mentioned (a) component, the above-mentioned (b) component and the above-mentioned (c) component is taken as 100 mass %, the above-mentioned (c) component is 0.9 mass % or more and 5 mass % or less; <Condition (iv)> When the sum of the above-mentioned (a) component and the above-mentioned (b) component is taken as 100% by mass, the above-mentioned (a) component is more than 70% by mass and 81% by mass or less, and the above-mentioned (b) component is less than 30% by mass and In the case of more than 19% by mass, it is satisfied MFRa<MFRb・・(Formula 1) When the total of the said (a) component, the said (b) component, and the said (c) component is made into 100 mass %, the said (c) component is 3 mass % or more and 5 mass % or less. 如請求項4之抗靜電性樹脂組合物,其中於ISO1133規定之200℃、5 kg負荷條件下之熔體流動速率(MFR)中, 上述乙烯基芳香族烴系樹脂(a3)之MFR(以下,記為MFRa)與上述嵌段共聚物(b)之MFR(以下,記為MFRb)之關係滿足 下述(v)或(vi)之條件; <條件(v)> 於將上述(a3)成分及上述(b)成分之合計設為100質量%時,上述(a3)成分為超過0質量%且20質量%以下,上述(b)成分為80質量%以上且未達100質量%之情形時,無論MFRa與MFRb之數值如何, 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,(c)均為0.5質量%以上5質量%以下; <條件(vi)> 於將上述(a3)成分及上述(b)成分之合計設為100質量%時,上述(a3)成分為超過20質量%且50質量%以下,上述(b)成分為未達80質量%且50質量%以上之情形時,滿足 MFRa<MFRb・・(式1) 將上述(a3)成分、上述(b)成分及上述(c)成分之合計設為100質量%時,上述(c)成分為3質量%以上5質量%以下。The antistatic resin composition of claim 4, wherein in the melt flow rate (MFR) under the conditions of 200°C and 5 kg load specified in ISO1133, The relationship between the MFR (hereinafter, referred to as MFRa) of the above-mentioned vinyl aromatic hydrocarbon resin (a3) and the MFR (hereinafter, referred to as MFRb) of the above-mentioned block copolymer (b) is satisfied Conditions (v) or (vi) below; <Condition (v)> When the sum of the above-mentioned (a3) component and the above-mentioned (b) component is 100% by mass, the above-mentioned (a3) component is more than 0% by mass and 20% by mass or less, and the above-mentioned (b) component is 80% by mass or more and not more than 80% by mass. When it reaches 100% by mass, regardless of the values of MFRa and MFRb, When the sum of the above-mentioned (a3) component, the above-mentioned (b) component, and the above-mentioned (c) component is taken as 100 mass %, (c) is 0.5 mass % or more and 5 mass % or less; <Condition (vi)> When the sum of the above-mentioned (a3) component and the above-mentioned (b) component is taken as 100 mass %, the above-mentioned (a3) component is more than 20 mass % and 50 mass % or less, and the above-mentioned (b) component is less than 80 mass % and In the case of more than 50% by mass, it is satisfied MFRa<MFRb・・(Formula 1) The said (c) component is 3 mass % or more and 5 mass % or less, when the sum total of said (a3) component, said (b) component, and said (c) component is made into 100 mass %. 如請求項1至7中任一項之抗靜電性樹脂組合物,其中上述供體-受體系分子化合物(c)係由下述通式(1)所表示; [化1]
Figure 03_image001
(式(1)中,R1 、R2 分別獨立為CH3 (CH2 )n -CO-OCH2 (n為12~22之整數)或HOCH2 ,且至少一者為CH3 (CH2 )n -CO-OCH3 (n為12~22之整數); R3 、R4 分別獨立為選自由CH3 、C2 H5 、HOCH2 、HOC2 H4 及HOCH2 CH(CH3 )所組成之群中之任一者; 此處,通式(1)中之「δ+」表示於分子內之共價鍵中存在極性,(+)表示氧原子之供電子性變強,(-)表示硼原子之吸電子性變強,「→」表示電子被拉近之路徑,「---」表示原子間鍵結力被削弱之狀態)。
The antistatic resin composition according to any one of claims 1 to 7, wherein the above-mentioned donor-acceptor molecular compound (c) is represented by the following general formula (1);
Figure 03_image001
(In formula (1), R 1 and R 2 are independently CH 3 (CH 2 ) n -CO-OCH 2 (n is an integer of 12 to 22) or HOCH 2 , and at least one of them is CH 3 (CH 2 ) ) n -CO-OCH 3 (n is an integer from 12 to 22); R 3 and R 4 are independently selected from CH 3 , C 2 H 5 , HOCH 2 , HOC 2 H 4 and HOCH 2 CH(CH 3 ) Any one of the group formed; Here, "δ+" in the general formula (1) means that there is polarity in the covalent bond in the molecule, (+) means that the electron donating property of the oxygen atom becomes stronger, ( -) indicates that the electron-withdrawing property of the boron atom becomes stronger, "→" indicates the path of electrons being drawn closer, and "---" indicates the state where the bonding force between atoms is weakened).
一種如請求項1至8中任一項之抗靜電性樹脂組合物之製造方法,該方法包括: 步驟(I),即,使用嵌段共聚物(b)及供體-受體系分子化合物(c),以將母料總量設為100質量%時供體-受體系分子化合物(c)為5質量%以上20質量%以下之組成比率進行熔融混練,藉此製造母料;及 步驟(II),即,藉由將上述母料與乙烯基芳香族烴系樹脂(a)及/或嵌段共聚物(b)混練而稀釋母料。A manufacturing method of the antistatic resin composition according to any one of claims 1 to 8, the method comprising: Step (I), that is, using the block copolymer (b) and the molecular compound of the donor-acceptor system (c), the molecular compound of the donor-acceptor system (c) when the total amount of the master batch is set at 100% by mass is: The composition ratio of 5 mass % or more and 20 mass % or less is melt-kneaded to produce a master batch; and Step (II), that is, diluting the master batch by kneading the above master batch with the vinyl aromatic hydrocarbon resin (a) and/or the block copolymer (b). 一種電子零件包裝材,其係如請求項1至8中任一項之抗靜電性樹脂組合物之成形體。An electronic component packaging material, which is a molded body of the antistatic resin composition according to any one of claims 1 to 8.
TW110114124A 2020-06-08 2021-04-20 Antistatic resin composition, method for producing antistatic resin composition, and packaging material for electronic parts TWI793575B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020099517A JP2021193169A (en) 2020-06-08 2020-06-08 Antistatic resin composition, method for producing antistatic resin composition, and electronic component packaging material
JP2020-099517 2020-06-08

Publications (2)

Publication Number Publication Date
TW202146569A true TW202146569A (en) 2021-12-16
TWI793575B TWI793575B (en) 2023-02-21

Family

ID=78865749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110114124A TWI793575B (en) 2020-06-08 2021-04-20 Antistatic resin composition, method for producing antistatic resin composition, and packaging material for electronic parts

Country Status (4)

Country Link
JP (1) JP2021193169A (en)
KR (1) KR102501480B1 (en)
CN (1) CN113831676A (en)
TW (1) TWI793575B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433548B1 (en) 2023-03-27 2024-02-19 三菱電機株式会社 Thermoplastic resin composition, molded article using the same, and method for producing thermoplastic resin composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436760A (en) 1977-08-26 1979-03-17 Doryokuro Kakunenryo Direct vision type liquid level detector for liquid metal
TWI392704B (en) * 2004-06-25 2013-04-11 Techno Polymer Co Ltd The thermoplastic resin composition and molded article
JP5158976B2 (en) * 2009-06-26 2013-03-06 旭化成ケミカルズ株式会社 Antistatic resin composition, antistatic resin molded body, and antistatic resin laminate
JP6001483B2 (en) * 2013-03-26 2016-10-05 ヘンケルジャパン株式会社 Hot melt adhesive
JP5734491B1 (en) * 2014-04-10 2015-06-17 株式会社ボロン研究所 Molded product comprising antistatic agent and insulator polymer material and method for producing the same
TWI638847B (en) * 2015-02-09 2018-10-21 旭化成股份有限公司 Block copolymer composition, molding material, resin composition, and molded body

Also Published As

Publication number Publication date
JP2021193169A (en) 2021-12-23
KR102501480B1 (en) 2023-02-21
TWI793575B (en) 2023-02-21
CN113831676A (en) 2021-12-24
KR20210152391A (en) 2021-12-15

Similar Documents

Publication Publication Date Title
US6933343B2 (en) Styrene polymer resin and composition thereof
US7323512B2 (en) Styrene copolymer composition
KR100449373B1 (en) Block copolymer and composition thereof
KR100508743B1 (en) Block copolymer composition
EP3109279B1 (en) Thermoplastic resin composition, and molded product and method for producing same
TWI793575B (en) Antistatic resin composition, method for producing antistatic resin composition, and packaging material for electronic parts
US10501617B2 (en) Block copolymer composition, molded material, resin composition, and molded product
KR102535021B1 (en) Block copolymer composition, molded article, manufacturing method of molded article, and method for adjusting haze value of molded article
CN112513178B (en) Block copolymer composition, heat-shrinkable film using the same, and packaged body provided with heat-shrinkable film
JP6999377B2 (en) Packaging materials for resin sheets and electronic components
JP2008121002A (en) Molded article for optical use
JP2003055531A (en) Resin composition and block copolymer for resin modification
JPH0525360A (en) Block copolymer resin composition
JP6896573B2 (en) Styrene-based copolymer and its manufacturing method, molded product
JP2023172108A (en) Abs-based resin composition, and molding
JP2024059224A (en) AS-based resin composition and molded body
JP2002105154A (en) Block copolymer and composition of the same
JP2004315726A (en) Flexible vinyl aromatic hydrocarbon-based polymer composition and molded article of the same
JP2000219753A (en) Light-shielding film
JP2004292547A (en) Transparent styrene-based resin composition and its molding