TW202144519A - Adhesive laminated film and production method of electronic device - Google Patents

Adhesive laminated film and production method of electronic device Download PDF

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TW202144519A
TW202144519A TW110118193A TW110118193A TW202144519A TW 202144519 A TW202144519 A TW 202144519A TW 110118193 A TW110118193 A TW 110118193A TW 110118193 A TW110118193 A TW 110118193A TW 202144519 A TW202144519 A TW 202144519A
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adhesive
resin layer
laminated film
ethylene
electronic component
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TW110118193A
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畦﨑崇
甲斐喬士
室伏貴信
木下仁
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日商三井化學東賽璐股份有限公司
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29Laminated material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/26Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/32Layered products comprising a layer of synthetic resin comprising polyolefins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
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    • C09J201/00Adhesives based on unspecified macromolecular compounds
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/24Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/24Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241Polyolefin, e.g.rubber
    • C09J7/243Ethylene or propylene polymers
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/25Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
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    • C09J2423/00Presence of polyolefin
    • C09J2423/04Presence of homo or copolymers of ethene
    • C09J2423/046Presence of homo or copolymers of ethene in the substrate

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  • Laminated Bodies (AREA)
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Abstract

An adhesive laminated film (50) including a substrate layer (20), an uneven absorbent resin layer (30) and an adhesive resin layer (40) in sequence and adapted for protecting a circuit forming surface of electronic parts is provided. The uneven absorbent resin layer (30) contains an ethylene-based copolymer having a melting point of 40°C or more and 80°C or less, and a crosslinking agent. The content of the crosslinking agent in the uneven absorbent resin layer (30) is 0.06 parts by mass or more and 0.60 parts by mass or less with respect to 100 parts by mass of the ethylene-based copolymer.

Description

黏著性積層膜及電子裝置的製造方法Adhesive laminated film and method for producing electronic device

本發明是有關於一種黏著性積層膜及電子裝置的製造方法。The present invention relates to a manufacturing method of an adhesive laminated film and an electronic device.

於電子裝置(例如半導體裝置)的製造步驟中,就保護電子零件(例如半導體晶圓)的非電路形成面(背面)的觀點而言,有時進行於電子零件的非電路形成面貼附熱硬化性保護膜的步驟。 作為與所述熱硬化性保護膜有關的技術,例如可列舉專利文獻1(日本專利特開2017-1188號公報)中記載的技術。In the manufacturing steps of electronic devices (eg, semiconductor devices), from the viewpoint of protecting the non-circuit-forming surfaces (back surfaces) of electronic components (eg, semiconductor wafers), heat may be applied to the non-circuit-forming surfaces of electronic components. Steps to harden the protective film. As a technique related to the said thermosetting protective film, the technique described in patent document 1 (Japanese Patent Laid-Open No. 2017-1188) is mentioned, for example.

在專利文獻1中記載了一種半導體用保護膜,所述半導體用保護膜包括:由非導電性無機材料構成的保護層、以及設置於所述保護層的其中一面的接著劑層。 [現有技術文獻] [專利文獻]Patent Document 1 describes a protective film for a semiconductor including a protective layer made of a non-conductive inorganic material and an adhesive layer provided on one surface of the protective layer. [Prior Art Literature] [Patent Literature]

專利文獻1:日本專利特開2017-1188號公報Patent Document 1: Japanese Patent Laid-Open No. 2017-1188

[發明所欲解決之課題][The problem to be solved by the invention]

作為近年來的傾向,電子零件的厚度逐漸變薄。根據本發明者等人的研究可知,隨著電子零件的厚度變薄,於先前的電子裝置的製造方法中,於在電子零件的非電路形成面貼附熱硬化性保護膜後對所述保護膜進行熱硬化時、或於背面研磨步驟後,存在電子零件容易產生翹曲的傾向。特別是於如晶圓級晶片級封裝(chip scale package,CSP)般使密封樹脂與半導體一體化且所述密封樹脂的厚度較厚的情況下,存在容易產生翹曲的傾向。若電子零件產生翹曲,則電子零件的處理變得困難,或者電極產生裂紋。As a trend in recent years, the thickness of electronic components has gradually become thinner. According to the study by the inventors of the present invention, as the thickness of the electronic component becomes thinner, in the conventional manufacturing method of the electronic device, after attaching the thermosetting protective film to the non-circuit forming surface of the electronic component, the above-mentioned protection is protected. When the film is thermally cured, or after the back grinding step, there is a tendency for electronic parts to be easily warped. In particular, when a sealing resin is integrated with a semiconductor like a wafer-level chip scale package (CSP) and the thickness of the sealing resin is thick, warpage tends to be easily generated. When an electronic component is warped, handling of the electronic component becomes difficult, or a crack occurs in the electrode.

本發明是鑑於所述情況而完成,提供一種可抑制電子零件的翹曲且抑制對所述電子零件或周邊裝置的污染的黏著性積層膜及電子裝置的製造方法。 [解決課題之手段]The present invention has been made in view of the above-mentioned circumstances, and provides an adhesive laminated film and a method for producing an electronic device which can suppress the warpage of electronic components and suppress contamination to the electronic components or peripheral devices. [Means of Solving Problems]

本發明者等人為了達成所述課題而反覆進行銳意研究。結果發現,藉由使用依次具有基材層、含熔點為特定範圍內的乙烯系共聚物及交聯劑的凹凸吸收性樹脂層、以及黏著性樹脂層且交聯劑的含量為特定範圍內的黏著性積層膜作為用於保護電子零件的電路形成面的表面保護膜,可抑制電子零件的翹曲且抑制與黏著性膜相伴隨的對電子零件或周邊裝置的污染(特別是構成黏著性積層膜的樹脂的滲出),從而完成了本發明。The inventors of the present invention have repeatedly conducted intensive studies in order to achieve the above-mentioned problems. As a result, it was found that by using a base material layer, a concavo-convex absorbent resin layer containing an ethylene-based copolymer having a melting point within a specific range and a crosslinking agent in this order, and an adhesive resin layer, the content of the crosslinking agent is within a specific range. The adhesive laminate film serves as a surface protective film for protecting the circuit formation surface of electronic parts, suppresses warpage of electronic parts, and suppresses contamination of electronic parts or peripheral devices associated with the adhesive film (especially the formation of adhesive laminates). exudation of the resin of the film), thereby completing the present invention.

根據本發明,可提供以下所示的黏著性積層膜及電子裝置的製造方法。ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the adhesive laminated film and electronic device shown below can be provided.

[1] 一種黏著性積層膜,依次包括基材層、凹凸吸收性樹脂層及黏著性樹脂層,用於保護電子零件的電路形成面, 所述凹凸吸收性樹脂層包含熔點為40℃以上、80℃以下的乙烯系共聚物、以及交聯劑, 相對於所述乙烯系共聚物100質量份,所述凹凸吸收性樹脂層中的所述交聯劑的含量為0.06質量份以上、0.60質量份以下。 [2] 如所述[1]所述的黏著性積層膜,其中 所述乙烯系共聚物包含選自由乙烯-α-烯烴共聚物及乙烯-乙烯基酯共聚物所組成的群組中的至少一種。 [3] 如所述[2]所述的黏著性積層膜,其中 所述乙烯-乙烯基酯共聚物包含乙烯-乙酸乙烯基酯共聚物。 [4] 如所述[1]至[3]中任一項所述的黏著性積層膜,其中 所述交聯劑包含選自由光交聯起始劑及有機過氧化物所組成的群組中的至少一種。 [5] 如所述[1]至[4]中任一項所述的黏著性積層膜, 為背面研磨膠帶。 [6] 如所述[1]至[5]中任一項所述的黏著性積層膜,其中 所述凹凸吸收性樹脂層進而包含交聯助劑。 [7] 如所述[6]所述的黏著性積層膜,其中 所述交聯助劑包含選自由二乙烯基芳香族化合物、三聚氰酸酯化合物、二烯丙基化合物、丙烯酸酯化合物、三烯丙基化合物、肟化合物及馬來醯亞胺化合物所組成的群組中的一種或兩種以上。 [8] 如所述[1]至[7]中任一項所述的黏著性積層膜,其中 構成所述基材層的樹脂包含選自由聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯及聚醯亞胺所組成的群組中的一種或兩種以上。 [9] 如所述[1]至[7]中任一項所述的黏著性積層膜,其中 構成所述基材層的樹脂包含聚萘二甲酸乙二酯。 [10] 如所述[1]至[9]中任一項所述的黏著性積層膜,其中 所述凹凸吸收性樹脂層的厚度為10 μm以上、1000 μm以下。 [11] 如所述[1]至[10]中任一項所述的黏著性積層膜,其中 構成所述黏著性樹脂層的黏著劑包含選自(甲基)丙烯酸系黏著劑、矽酮系黏著劑、胺基甲酸酯系黏著劑、烯烴系黏著劑及苯乙烯系黏著劑中的一種或兩種以上。 [12] 一種電子裝置的製造方法,包括: 準備步驟(A),準備包括電子零件、黏著性積層膜及熱硬化性保護膜的結構體, 所述電子零件具有電路形成面,所述黏著性積層膜貼附於所述電子零件的所述電路形成面側,所述熱硬化性保護膜貼附於所述電子零件的與所述電路形成面為相反側的面;以及 熱硬化步驟(B),藉由對所述結構體進行加熱來使所述熱硬化性保護膜熱硬化, 所述黏著性積層膜是如所述[1]至[11]中任一項所述的黏著性積層膜。 [13] 如所述[12]所述的電子裝置的製造方法,其中 所述準備步驟(A)包括: 硬化步驟,於在所述電子零件的所述電路形成面貼附有所述黏著性積層膜的狀態下,使所述黏著性積層膜中的所述凹凸吸收性樹脂層熱硬化或紫外線硬化;以及 在所述電子零件的與所述電路形成面為相反側的面貼附所述熱硬化性保護膜的步驟。 [14] 如所述[13]所述的電子裝置的製造方法,其中 在所述電子零件的與所述電路形成面為相反側的面貼附所述熱硬化性保護膜的步驟中的加熱溫度為50℃以上、90℃以下。 [15] 如所述[13]或[14]所述的電子裝置的製造方法,其中 所述準備步驟(A)於所述硬化步驟之前包括背面研磨步驟,所述背面研磨步驟是於在所述電子零件的所述電路形成面貼附有所述黏著性積層膜的狀態下,對所述電子零件的與所述電路形成面為相反側的面進行背面研磨。 [16] 如所述[12]至[15]中任一項所述的電子裝置的製造方法,其中 所述熱硬化步驟(B)中的加熱溫度為120℃以上、170℃以下。 [17] 如所述[12]至[16]中任一項所述的電子裝置的製造方法,其中 所述電子零件的所述電路形成面包含凸塊電極。 [18] 如所述[17]所述的電子裝置的製造方法,其中 於將所述凸塊電極的高度設為H[μm]且將所述凹凸吸收性樹脂層的厚度設為d[μm]時,H/d為0.01以上、1以下。 [發明的效果][1] An adhesive laminated film, which sequentially includes a base material layer, a concave-convex absorbing resin layer and an adhesive resin layer, is used for protecting the circuit forming surface of electronic parts, The unevenness-absorbing resin layer contains an ethylene-based copolymer having a melting point of 40°C or higher and 80°C or lower, and a crosslinking agent, Content of the said crosslinking agent in the said uneven|corrugated absorbent resin layer is 0.06 mass part or more and 0.60 mass part or less with respect to 100 mass parts of said ethylene type copolymers. [2] The adhesive laminated film according to the above [1], wherein The ethylene-based copolymer includes at least one selected from the group consisting of an ethylene-α-olefin copolymer and an ethylene-vinyl ester copolymer. [3] The adhesive laminated film according to the above [2], wherein The ethylene-vinyl ester copolymer comprises ethylene-vinyl acetate copolymer. [4] The adhesive laminated film according to any one of [1] to [3], wherein The crosslinking agent includes at least one selected from the group consisting of a photocrosslinking initiator and an organic peroxide. [5] The adhesive laminated film according to any one of [1] to [4], Grind tape for the backside. [6] The adhesive laminated film according to any one of [1] to [5], wherein The unevenness absorbent resin layer further contains a crosslinking aid. [7] The adhesive laminated film according to the above [6], wherein The cross-linking assistant is selected from the group consisting of divinyl aromatic compounds, cyanurate compounds, diallyl compounds, acrylate compounds, triallyl compounds, oxime compounds and maleimide compounds one or more of the groups. [8] The adhesive laminated film according to any one of [1] to [7], wherein The resin constituting the base material layer includes one or more selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, and polyimide. [9] The adhesive laminated film according to any one of [1] to [7], wherein The resin constituting the base material layer contains polyethylene naphthalate. [10] The adhesive laminated film according to any one of [1] to [9], wherein The thickness of the unevenness-absorbing resin layer is 10 μm or more and 1000 μm or less. [11] The adhesive laminated film according to any one of [1] to [10], wherein The adhesive constituting the adhesive resin layer comprises one selected from the group consisting of (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives and styrene adhesives or two or more. [12] A method of manufacturing an electronic device, comprising: In the preparation step (A), a structure including electronic parts, an adhesive laminate film and a thermosetting protective film is prepared, The electronic component has a circuit formation surface, the adhesive laminate film is attached to the circuit formation surface side of the electronic component, and the thermosetting protective film is attached to the circuit formation surface of the electronic component. the face is the face on the opposite side; and The thermosetting step (B) is to thermally harden the thermosetting protective film by heating the structure, The adhesive laminated film is the adhesive laminated film according to any one of the above [1] to [11]. [13] The method for manufacturing an electronic device as described in [12], wherein The preparation step (A) includes: a curing step of thermally curing or ultraviolet curing the unevenness absorbing resin layer in the adhesive laminate film in a state where the adhesive laminate film is attached to the circuit forming surface of the electronic component; as well as The step of attaching the thermosetting protective film to the surface opposite to the circuit formation surface of the electronic component. [14] The method for manufacturing an electronic device as described in [13], wherein The heating temperature in the step of attaching the thermosetting protective film to the surface opposite to the circuit formation surface of the electronic component is 50° C. or higher and 90° C. or lower. [15] The method for manufacturing an electronic device according to [13] or [14], wherein The preparation step (A) includes a back grinding step before the hardening step, and the back grinding step is to apply the adhesive laminated film to the circuit formation surface of the electronic component in a state where the adhesive laminate film is attached. The surface on the opposite side to the circuit formation surface of the electronic component is back-polished. [16] The method for manufacturing an electronic device according to any one of [12] to [15], wherein The heating temperature in the thermosetting step (B) is 120° C. or higher and 170° C. or lower. [17] The method for manufacturing an electronic device according to any one of [12] to [16], wherein The circuit formation surface of the electronic component includes bump electrodes. [18] The method for manufacturing an electronic device as described in [17], wherein H/d is 0.01 or more and 1 or less, when the height of the bump electrode is H [μm] and the thickness of the unevenness absorbing resin layer is d [μm]. [Effect of invention]

根據本發明,可提供一種可抑制電子零件的翹曲且抑制對所述電子零件或周邊裝置的污染的黏著性積層膜及電子裝置的製造方法。ADVANTAGE OF THE INVENTION According to this invention, the warpage of an electronic component can be suppressed, and the manufacturing method of an adhesive laminated film and an electronic device which can suppress the contamination to the said electronic component or a peripheral device can be provided.

以下,對於本發明的實施形態,使用圖式進行說明。再者,於所有圖式中,對同樣的構成要素標註共通的符號,且適當地省略說明。另外,圖為概略圖,與實際的尺寸比率不一致。另外,數值範圍的「A~B」若無特別說明,則表示A以上、B以下。另外,本實施形態中,所謂「(甲基)丙烯酸」是指丙烯酸、甲基丙烯酸或者丙烯酸及甲基丙烯酸的兩者。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all drawings, the common code|symbol is attached|subjected to the same component, and description is abbreviate|omitted suitably. In addition, the drawing is a schematic drawing, and does not match the actual size ratio. In addition, "A to B" in the numerical range means A or more and B or less unless otherwise specified. In addition, in this embodiment, "(meth)acrylic acid" means acrylic acid, methacrylic acid, or both of acrylic acid and methacrylic acid.

1.黏著性積層膜 圖1是示意性地表示本發明的實施形態的黏著性積層膜50的一例的剖面圖。 本實施形態的黏著性積層膜50是依次包括基材層20、凹凸吸收性樹脂層30及黏著性樹脂層40,且用於保護電子零件的電路形成面的黏著性積層膜50,凹凸吸收性樹脂層30包含熔點為40℃以上、80℃以下的乙烯系共聚物、以及交聯劑,相對於乙烯系共聚物100質量份,凹凸吸收性樹脂層30中的交聯劑的含量為0.06質量份以上、0.60質量份以下。 乙烯系共聚物的熔點藉由示差掃描熱量計(Differential Scanning Calorimeter,DSC)進行測定。1. Adhesive laminated film FIG. 1 is a cross-sectional view schematically showing an example of an adhesive laminated film 50 according to an embodiment of the present invention. The adhesive laminated film 50 of the present embodiment includes a base material layer 20, a concavo-convex absorbing resin layer 30, and an adhesive resin layer 40 in this order, and is an adhesive laminated film 50 for protecting the circuit forming surface of an electronic component. The resin layer 30 contains an ethylene-based copolymer having a melting point of 40° C. or higher and 80° C. or lower, and a cross-linking agent, and the content of the cross-linking agent in the unevenness absorbent resin layer 30 is 0.06 mass parts relative to 100 parts by mass of the ethylene-based copolymer. part or more and 0.60 mass part or less. The melting point of the ethylene-based copolymer was measured with a differential scanning calorimeter (DSC).

如上所述,根據本發明者等人的研究可知,隨著電子零件的厚度變薄,於先前的電子裝置的製造方法中,於在電子零件的非電路形成面貼附熱硬化性保護膜後對所述保護膜進行熱硬化時、或於背面研磨步驟後,存在電子零件容易產生翹曲的傾向。特別是於如晶圓級CSP般使樹脂與半導體一體化且所述樹脂的厚度較厚的情況下,存在容易產生翹曲的傾向。若電子零件產生翹曲,則電子零件的處理變得困難,或者電極產生裂紋。 本發明者等人為了達成所述課題而反覆進行銳意研究。結果發現,藉由使用依次具有基材層20、含熔點為40℃以上、80℃以下的乙烯系共聚物及交聯劑的凹凸吸收性樹脂層30、以及黏著性樹脂層40且交聯劑的含量為所述範圍內的黏著性積層膜50作為用於保護電子零件的電路形成面的表面保護膜,可抑制電子零件的翹曲且抑制與黏著性膜相伴隨的對電子零件或周邊裝置的污染(特別是構成黏著性積層膜的樹脂的滲出)。 如上所述,根據本實施形態的黏著性積層膜50,可抑制電子零件的翹曲。As described above, according to the study by the inventors of the present invention, as the thickness of the electronic component becomes thinner, in the conventional manufacturing method of the electronic device, after attaching the thermosetting protective film to the non-circuit forming surface of the electronic component When thermosetting the protective film or after the back grinding step, there is a tendency for electronic parts to be easily warped. In particular, when the resin and the semiconductor are integrated like a wafer-level CSP, and the thickness of the resin is thick, there is a tendency for warpage to easily occur. When an electronic component is warped, handling of the electronic component becomes difficult, or a crack occurs in the electrode. The inventors of the present invention have repeatedly conducted intensive studies in order to achieve the above-mentioned problems. As a result, it was found that by using the base material layer 20, the unevenness absorbent resin layer 30 containing the ethylene-based copolymer having a melting point of 40° C. or higher and 80° C. or lower and a cross-linking agent in this order, and the adhesive resin layer 40 and the cross-linking agent The content of the adhesive laminated film 50 within the range described above serves as a surface protective film for protecting the circuit formation surface of electronic parts, suppresses warpage of electronic parts, and suppresses damage to electronic parts or peripheral devices accompanying the adhesive film. contamination (especially bleed-out of the resins that make up the adhesive laminate film). As described above, according to the adhesive laminated film 50 of the present embodiment, the warpage of electronic components can be suppressed.

本實施形態的黏著性積層膜50在電子裝置的製造步驟中用於保護電子零件的表面或固定電子零件,更具體而言,在作為電子裝置的製造步驟之一的研削電子零件的步驟(亦稱為背面研磨步驟)中可較佳地用作用於保護電子零件的電路形成面(即包含電路圖案的電路面)的背面研磨膠帶。具體而言,可用於在電子零件的電路形成面上貼附黏著性積層膜50來進行保護,並對與所述電路形成面為相反側的面進行研削的步驟。於在電路形成面上具有凸塊電極的情況下,可較佳地應用包括凹凸吸收性樹脂層30的本實施形態的黏著性積層膜50。 另外,本實施形態的黏著性積層膜50例如亦可用作:在切割步驟或轉印步驟等中用於保護或保持具有表面凹凸的電子零件(例如半導體晶圓、密封晶圓等)的黏著性膜;用於臨時固定具有表面凹凸的電子零件(例如半導體晶片或半導體封裝等)的黏著性膜;於電子零件(例如半導體晶圓等)的乾式拋光、電子零件(例如半導體晶圓等)的背面保護用構件的貼附、硬化、在電子零件(例如半導體封裝等)上的電磁波屏蔽膜的形成、在電子零件(例如半導體晶圓等)的背面上的金屬膜形成等90℃以上的加熱步驟中使用的黏著性膜。The adhesive laminated film 50 of the present embodiment is used to protect the surface of electronic parts or fix electronic parts in the manufacturing steps of electronic devices, and more specifically, in the step of grinding electronic parts (also known as one of the manufacturing steps of electronic devices) It can be preferably used as a back grinding tape for protecting the circuit-forming surface (ie, the circuit surface including the circuit pattern) of the electronic parts in the so-called back grinding step). Specifically, it can be used for a step of adhering and protecting the adhesive laminated film 50 on the circuit formation surface of an electronic component, and grinding the surface on the opposite side to the circuit formation surface. In the case of having bump electrodes on the circuit formation surface, the adhesive laminated film 50 of the present embodiment including the unevenness absorbing resin layer 30 can be preferably applied. In addition, the adhesive laminated film 50 of the present embodiment can also be used, for example, as an adhesive for protecting or maintaining electronic components having surface irregularities (eg, semiconductor wafers, sealing wafers, etc.) in a dicing step, a transfer step, or the like adhesive films; adhesive films used to temporarily fix electronic parts with uneven surfaces (such as semiconductor chips or semiconductor packages, etc.); dry polishing of electronic parts (such as semiconductor wafers, etc.), electronic parts (such as semiconductor wafers, etc.) 90℃ or higher The adhesive film used in the heating step.

<基材層> 基材層20是出於使黏著性積層膜50的操作性或機械特性、耐熱性等特性更良好的目的而設置的層。 基材層20並無特別限定,例如可列舉樹脂膜。 作為構成基材層20的樹脂,可列舉選自聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯及聚醯亞胺等中的一種或兩種以上。 該些中,就使耐熱性更良好的觀點而言,較佳為選自聚萘二甲酸乙二酯及聚醯亞胺中的至少一種,更佳為聚萘二甲酸乙二酯。<Substrate layer> The base material layer 20 is a layer provided for the purpose of improving the handleability, mechanical properties, heat resistance and other properties of the adhesive laminated film 50 . Although the base material layer 20 is not specifically limited, For example, a resin film is mentioned. As a resin which comprises the base material layer 20, 1 type or 2 or more types selected from polyethylene terephthalate, polyethylene naphthalate, polyimide, etc. are mentioned. Among these, from the viewpoint of making heat resistance more favorable, at least one kind selected from polyethylene naphthalate and polyimide is preferred, and polyethylene naphthalate is more preferred.

基材層20可為單層,亦可為兩種以上的層。 另外,為了形成基材層20而使用的樹脂膜的形態可為延伸膜,亦可為於單軸方向或雙軸方向上延伸的膜。The base material layer 20 may be a single layer, or may be two or more layers. In addition, the form of the resin film used for forming the base material layer 20 may be a stretched film, or may be a film extended in a uniaxial direction or a biaxial direction.

就獲得良好的膜特性的觀點而言,基材層20的厚度較佳為10 μm以上、500 μm以下,更佳為20 μm以上、200 μm以下,進而佳為25 μm以上、100 μm以下。 基材層20為了改良與其他層的黏接性,亦可進行表面處理。具體而言,亦可進行電暈處理、電漿處理、下塗(under coat)處理、底塗(primer coat)處理等。From the viewpoint of obtaining good film properties, the thickness of the base material layer 20 is preferably 10 μm or more and 500 μm or less, more preferably 20 μm or more and 200 μm or less, and still more preferably 25 μm or more and 100 μm or less. In order to improve the adhesiveness with other layers, the base material layer 20 may also be subjected to surface treatment. Specifically, corona treatment, plasma treatment, under coat treatment, primer coat treatment, and the like may be performed.

<凹凸吸收性樹脂層> 本實施形態的黏著性積層膜50於基材層20與黏著性樹脂層40之間具有凹凸吸收性樹脂層30。 凹凸吸收性樹脂層30是出於使黏著性積層膜50的對於電路形成面10A的追隨性良好,且使電路形成面10A與黏著性積層膜50的密接性良好的目的而設置的層。進而,凹凸吸收性樹脂層30是出於藉由進行熱硬化或紫外線硬化來提高黏著性積層膜50的耐熱性的目的而設置的層。藉此,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可抑制電子零件的翹曲。進而,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可抑制凹凸吸收性樹脂層30熔融而引起樹脂的溢出。<Concavo-convex absorbent resin layer> The adhesive laminated film 50 of the present embodiment has the unevenness absorbing resin layer 30 between the base material layer 20 and the adhesive resin layer 40 . The unevenness absorptive resin layer 30 is a layer provided for the purpose of improving the conformability of the adhesive laminated film 50 to the circuit forming surface 10A and improving the adhesion between the circuit forming surface 10A and the adhesive laminated film 50 . Furthermore, the unevenness absorbing resin layer 30 is a layer provided for the purpose of improving the heat resistance of the adhesive laminated film 50 by thermal curing or ultraviolet curing. Thereby, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C opposite to the circuit forming surface 10A of the electronic component 10, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 ), the warpage of electronic parts can be suppressed. Furthermore, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 Among them, it is possible to prevent the unevenness absorbent resin layer 30 from melting and overflowing of the resin.

凹凸吸收性樹脂層30包含乙烯系共聚物。 作為本實施形態的乙烯系共聚物,可使用選自由乙烯-α-烯烴共聚物及乙烯-乙烯基酯共聚物所組成的群組中的至少一種。The unevenness absorbent resin layer 30 contains an ethylene-based copolymer. As the ethylene-based copolymer of the present embodiment, at least one selected from the group consisting of an ethylene-α-olefin copolymer and an ethylene-vinyl ester copolymer can be used.

本實施形態的乙烯-α-烯烴共聚物例如是藉由將乙烯與碳數3~20的α-烯烴共聚而獲得的共聚物。 作為α-烯烴,例如可將碳數3~20的α-烯烴單獨使用一種,或者將兩種以上組合使用。其中,較佳為碳數為10以下的α-烯烴,尤佳為碳數為3~8的α-烯烴。作為此種α-烯烴的具體例,可列舉丙烯、1-丁烯、1-戊烯、1-己烯、3-甲基-1-丁烯、3,3-二甲基-1-丁烯、4-甲基-1-戊烯、1-辛烯、1-癸烯、1-十二烯等。其中,就獲取的容易性的方面而言,較佳為丙烯、1-丁烯、1-戊烯、1-己烯、4-甲基-1-戊烯及1-辛烯。乙烯-α-烯烴共聚物可為無規共聚物,亦可為嵌段共聚物,就柔軟性的觀點而言,較佳為無規共聚物。The ethylene-α-olefin copolymer of the present embodiment is, for example, a copolymer obtained by copolymerizing ethylene and an α-olefin having 3 to 20 carbon atoms. As the α-olefin, for example, α-olefin having 3 to 20 carbon atoms can be used alone or in combination of two or more. Among them, α-olefins having 10 or less carbon atoms are preferred, and α-olefins having 3 to 8 carbon atoms are particularly preferred. Specific examples of such α-olefins include propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, and 3,3-dimethyl-1-butene ene, 4-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, etc. Among them, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, and 1-octene are preferable in terms of availability. The ethylene-α-olefin copolymer may be a random copolymer or a block copolymer, and a random copolymer is preferred from the viewpoint of flexibility.

此處,作為乙烯-α-烯烴共聚物,例如可列舉三井化學公司製造的塔夫瑪(TAFMER)(註冊商標)、陶氏(DOW)公司製造的英吉志(ENGAGE)(註冊商標)、埃克森美孚(Exxon Mobil)公司製造的英仔特(EXACT)(註冊商標)、日本聚乙烯公司製造的科耐爾(KERNEL)(註冊商標)等。Here, examples of the ethylene-α-olefin copolymer include TAFMER (registered trademark) manufactured by Mitsui Chemicals Corporation, ENGAGE (registered trademark) manufactured by Dow Corporation, EXACT (registered trademark) manufactured by Exxon Mobil Corporation, KERNEL (registered trademark) manufactured by Japan Polyethylene Corporation, etc.

按照美國材料試驗學會(American Society for Testing Material,ASTM)D1505測定的乙烯-α-烯烴共聚物的密度較佳為850 kg/m3 ~900 kg/m3 ,更佳為850 kg/m3 ~880 kg/m3 ,進而佳為850 kg/m3 ~870 kg/m3 。 於密度為所述下限值以上時,可避免黏連等處理故障。另外,於密度為所述上限值以下時,可獲得凹凸吸收性優異的凹凸吸收性樹脂層30。 按照ASTM D1238,在190℃、2.16 kg負荷的條件下測定的乙烯-α-烯烴共聚物的熔體流動速率(Melt Flow Rate,MFR)較佳為0.1 g/10分鐘~50 g/10分鐘,更佳為1 g/10分鐘~40 g/10分鐘,進而佳為3 g/10分鐘~35 g/10分鐘。 於MFR為所述下限值以上時,乙烯-α-烯烴共聚物的流動性提高,可使凹凸吸收性樹脂層30的加工性更良好。 另外,於MFR為所述上限值以下時,可獲得厚度更均勻的凹凸吸收性樹脂層30,可抑制加熱步驟時凹凸吸收性樹脂層引起的樹脂的滲出。The density of the ethylene-α-olefin copolymer measured in accordance with American Society for Testing Materials (ASTM) D1505 is preferably 850 kg/m 3 to 900 kg/m 3 , more preferably 850 kg/m 3 to 850 kg/m 3 . 880 kg/m 3 , more preferably 850 kg/m 3 to 870 kg/m 3 . When the density is equal to or higher than the lower limit value, processing failures such as sticking can be avoided. Moreover, when the density is below the said upper limit value, the uneven|corrugated absorbent resin layer 30 excellent in the unevenness absorption property can be obtained. According to ASTM D1238, the melt flow rate (MFR) of the ethylene-α-olefin copolymer measured under the conditions of 190°C and a load of 2.16 kg is preferably 0.1 g/10 minutes to 50 g/10 minutes, More preferably, it is 1 g/10 minutes - 40 g/10 minutes, More preferably, it is 3 g/10 minutes - 35 g/10 minutes. When MFR is more than the said lower limit, the fluidity|liquidity of an ethylene-alpha-olefin copolymer improves, and the processability of the uneven|corrugated absorbent resin layer 30 can be made more favorable. Moreover, when MFR is below the said upper limit, the uneven|corrugated absorbent resin layer 30 with a more uniform thickness can be obtained, and the bleed-out of resin by the uneven|corrugated absorbent resin layer at the time of a heating process can be suppressed.

作為本實施形態的乙烯-乙烯基酯共聚物,較佳為包含例如選自乙烯-乙酸乙烯基酯共聚物、乙烯-丙酸乙烯基酯共聚物、乙烯-丁酸乙烯基酯共聚物、乙烯-硬脂酸乙烯基酯共聚物等中的一種或兩種以上,更佳為包含乙烯-乙酸乙烯基酯共聚物。The ethylene-vinyl ester copolymer of the present embodiment preferably contains, for example, an ethylene-vinyl acetate copolymer, an ethylene-vinyl propionate copolymer, an ethylene-vinyl butyrate copolymer, an ethylene-vinyl acetate copolymer, and an ethylene-vinyl acetate copolymer. - One or more of vinyl stearate copolymers, etc., more preferably, ethylene-vinyl acetate copolymers are included.

所述乙烯-乙酸乙烯基酯共聚物是乙烯與乙酸乙烯基酯的共聚物,例如為無規共聚物。 所述乙烯-乙酸乙烯基酯共聚物中的源自乙酸乙烯基酯的結構單元的含有比例較佳為15質量%以上、50質量%以下,更佳為20質量%以上、45質量%以下,進而佳為25質量%以上、40質量%以下。於乙酸乙烯基酯的含量為該範圍內時,凹凸吸收性樹脂層30的柔軟性、耐熱性、透明性、機械性質的平衡更優異。另外,在將凹凸吸收性樹脂層30成膜時,成膜性亦變得良好。 乙酸乙烯基酯的含量可按照日本工業標準(Japanese Industrial Standards,JIS)K7192:1999進行測定。The ethylene-vinyl acetate copolymer is a copolymer of ethylene and vinyl acetate, such as a random copolymer. The content ratio of the vinyl acetate-derived structural unit in the ethylene-vinyl acetate copolymer is preferably 15% by mass or more and 50% by mass or less, more preferably 20% by mass or more and 45% by mass or less, More preferably, it is 25 mass % or more and 40 mass % or less. When the content of vinyl acetate is within this range, the unevenness-absorptive resin layer 30 is more excellent in the balance of flexibility, heat resistance, transparency, and mechanical properties. In addition, when forming the unevenness-absorbing resin layer 30 into a film, the film-forming property becomes favorable. The content of vinyl acetate can be measured in accordance with Japanese Industrial Standards (JIS) K7192:1999.

另外,乙烯-乙酸乙烯基酯共聚物較佳為僅包含乙烯及乙酸乙烯基酯的二元共聚物,除了乙烯及乙酸乙烯基酯以外,可包含選自例如甲酸乙烯基酯、乙醇酸乙烯基酯、丙酸乙烯基酯、苯甲酸乙烯基酯等乙烯基酯系單量體;丙烯酸、甲基丙烯酸、乙基丙烯酸、或者該些的鹽或烷基酯等丙烯酸系單量體等中的一種或兩種以上作為共聚成分。於包含所述乙烯及乙酸乙烯基酯以外的共聚成分的情況下,較佳為將乙烯-乙酸乙烯基酯共聚物中的所述乙烯及乙酸乙烯基酯以外的共聚成分的量設為0.5質量%以上、5質量%以下。In addition, the ethylene-vinyl acetate copolymer is preferably a binary copolymer containing only ethylene and vinyl acetate, and may contain, for example, vinyl formate and vinyl glycolate in addition to ethylene and vinyl acetate. ester, vinyl propionate, vinyl benzoate and other vinyl ester monomers; acrylic acid, methacrylic acid, ethacrylic acid, or these salts or acrylic monomers such as alkyl esters, etc. One or two or more of them are used as copolymerization components. When containing the copolymerization components other than the said ethylene and vinyl acetate, it is preferable to make the quantity of the copolymerization components other than the said ethylene and vinyl acetate in the ethylene-vinyl acetate copolymer into 0.5 mass % or more and 5 mass % or less.

按照JIS K7210:1999,在190℃、2.16 kg負荷的條件下測定的乙烯-乙烯基酯共聚物的熔體流動速率(MFR)較佳為0.1 g/10分鐘~50 g/10分鐘,更佳為1 g/10分鐘~40 g/10分鐘,進而佳為3 g/10分鐘~35 g/10分鐘。 於MFR為所述下限值以上時,乙烯-乙烯基酯共聚物的流動性提高,可使凹凸吸收性樹脂層30的成形加工性更良好。 另外,於MFR為所述上限值以下時,分子量變高,因此難以發生向冷卻輥等輥面的附著,可獲得厚度更均勻的凹凸吸收性樹脂層30,可抑制加熱步驟時凹凸吸收性樹脂層引起的樹脂的滲出。According to JIS K7210:1999, the melt flow rate (MFR) of the ethylene-vinyl ester copolymer measured at 190°C under a load of 2.16 kg is preferably 0.1 g/10 minutes to 50 g/10 minutes, more preferably It is 1 g/10 minutes - 40 g/10 minutes, more preferably 3 g/10 minutes - 35 g/10 minutes. When MFR is more than the said lower limit, the fluidity|liquidity of an ethylene-vinyl ester copolymer improves, and the shaping|molding processability of the uneven|corrugated absorbent resin layer 30 can be made more favorable. In addition, when the MFR is equal to or less than the above upper limit value, the molecular weight becomes high, so that adhesion to the roll surface such as a cooling roll is less likely to occur, the unevenness-absorbing resin layer 30 having a more uniform thickness can be obtained, and the unevenness absorption during the heating step can be suppressed. Bleeding of resin due to resin layer.

凹凸吸收性樹脂層30例如可藉由將各成分乾式混合或熔融混煉後進行擠出成形而獲得。另外,可視需要添加抗氧化劑。The uneven|corrugated absorbent resin layer 30 can be obtained by extrusion molding after dry mixing or melt-kneading each component, for example. In addition, antioxidants can be added as needed.

於將凹凸吸收性樹脂層30的整體設為100質量%時,凹凸吸收性樹脂層30中所含的乙烯系共聚物及交聯劑的合計含量較佳為60質量%以上,更佳為70質量%以上,進而佳為80質量%以上,進而更佳為90質量%以上,尤佳為95質量%以上。The total content of the ethylene-based copolymer and the crosslinking agent contained in the concavo-convex absorbent resin layer 30 is preferably 60% by mass or more, more preferably 70% by mass when the entire concavo-convex absorbent resin layer 30 is 100% by mass. The mass % or more is more preferably 80 mass % or more, still more preferably 90 mass % or more, and still more preferably 95 mass % or more.

乙烯系共聚物的熔點為40℃以上,較佳為45℃以上,更佳為50℃以上,進而佳為54℃以上。 於乙烯系共聚物的熔點為所述下限值以上時,可抑制輸送、保管黏著性積層膜50時的形狀變化。進而,於乙烯系共聚物的熔點為所述下限值以上時,可抑制在背面研磨步驟中黏著性積層膜50的形狀變化,可更良好地推進電子零件的背面研磨。進而,於乙烯系共聚物的熔點為所述下限值以上時,可提高凹凸吸收性樹脂層30的加工溫度。The melting point of the ethylene-based copolymer is 40°C or higher, preferably 45°C or higher, more preferably 50°C or higher, and further preferably 54°C or higher. When the melting point of the ethylene-based copolymer is equal to or higher than the lower limit value, the shape change at the time of transportation and storage of the adhesive laminated film 50 can be suppressed. Furthermore, when the melting point of the ethylene-based copolymer is equal to or higher than the lower limit value, the shape change of the adhesive laminated film 50 in the back grinding step can be suppressed, and the back grinding of electronic components can be more favorably advanced. Furthermore, when the melting point of the ethylene-based copolymer is equal to or higher than the lower limit value, the processing temperature of the unevenness absorbent resin layer 30 can be increased.

乙烯系共聚物的熔點為80℃以下,較佳為75℃以下,更佳為70℃以下,進而佳為65℃以下。 於乙烯系共聚物的熔點為所述上限值以下時,可降低將黏著性積層膜50貼附於電子零件時的溫度。進而,於乙烯系共聚物的熔點為所述上限值以下時,可提高添加劑在乙烯系共聚物中的相容性,結果,可抑制凹凸吸收性樹脂層30中所含的添加劑的滲漏。進而,於乙烯系共聚物的熔點為所述上限值以下時,可進一步提高使黏著性積層膜50的厚度變厚時的黏著性積層膜50的處理性、或黏著性積層膜50的應力緩和性。The melting point of the ethylene-based copolymer is 80°C or lower, preferably 75°C or lower, more preferably 70°C or lower, and further preferably 65°C or lower. When the melting point of the ethylene-based copolymer is below the upper limit, the temperature at which the adhesive laminated film 50 is attached to the electronic component can be lowered. Furthermore, when the melting point of the ethylene-based copolymer is equal to or less than the upper limit, the compatibility of the additive with the ethylene-based copolymer can be improved, and as a result, leakage of the additive contained in the unevenness absorbent resin layer 30 can be suppressed. . Furthermore, when the melting point of the ethylene-based copolymer is equal to or less than the upper limit, the handleability of the adhesive laminated film 50 when the thickness of the adhesive laminated film 50 is increased, or the stress of the adhesive laminated film 50 can be further improved. Alleviation.

於包含兩種成分以上的乙烯系共聚物時,亦有時會觀測到兩個以上的熔點,只要至少一個熔點為所述範圍內即可。較佳為所述兩個以上的熔點均為所述範圍內。In the case of an ethylene-based copolymer containing two or more components, two or more melting points may be observed, and at least one melting point may be within the above-mentioned range. It is preferable that both of the above-mentioned two or more melting points are within the above-mentioned range.

另外,凹凸吸收性樹脂層30包含交聯劑。藉由凹凸吸收性樹脂層30包含交聯劑,可在步驟(B)之前使凹凸吸收性樹脂層30有效地熱硬化或紫外線硬化,可進一步提高凹凸吸收性樹脂層30的耐熱性。藉此,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可進一步抑制電子零件的翹曲。進而,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可進一步抑制凹凸吸收性樹脂層30熔融而引起樹脂的溢出。 作為本實施形態的交聯劑,並無特別限定,例如可使用選自由光交聯起始劑及有機過氧化物所組成的群組中的至少一種。 就抑制翹曲的觀點而言,相對於乙烯系共聚物100質量份,凹凸吸收性樹脂層30中的交聯劑的含量為0.60質量份以下,較佳為0.55質量份以下,更佳為0.50質量份以下。 另外,就防止加熱時的樹脂的滲出的觀點而言,相對於乙烯系共聚物100質量份,凹凸吸收性樹脂層30中的交聯劑的含量為0.06質量份以上,較佳為0.07質量份以上,更佳為0.08質量份以上。In addition, the unevenness absorbent resin layer 30 contains a crosslinking agent. By including the crosslinking agent in the unevenness absorbing resin layer 30 , the unevenness absorbing resin layer 30 can be effectively thermally cured or UV cured before step (B), and the heat resistance of the unevenness absorbing resin layer 30 can be further improved. Thereby, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C opposite to the circuit forming surface 10A of the electronic component 10, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 ), the warpage of electronic parts can be further suppressed. Furthermore, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 Among them, it is possible to further suppress the overflow of resin due to melting of the unevenness absorbent resin layer 30 . Although it does not specifically limit as a crosslinking agent of this embodiment, For example, at least 1 sort(s) chosen from the group which consists of a photocrosslinking initiator and an organic peroxide can be used. From the viewpoint of suppressing warpage, the content of the crosslinking agent in the uneven absorbent resin layer 30 is 0.60 parts by mass or less, preferably 0.55 parts by mass or less, and more preferably 0.50 parts by mass relative to 100 parts by mass of the ethylene-based copolymer. parts by mass or less. In addition, from the viewpoint of preventing bleeding of the resin during heating, the content of the crosslinking agent in the unevenness absorbent resin layer 30 is 0.06 parts by mass or more, preferably 0.07 parts by mass with respect to 100 parts by mass of the ethylene-based copolymer. Above, more preferably 0.08 part by mass or more.

作為有機過氧化物,例如可使用選自過氧化二月桂醯基、1,1,3,3-四甲基丁基過氧化-2-乙基己酸酯、過氧化二苯甲醯基、過氧化環己酮、二-第三丁基過鄰苯二甲酸酯、枯烯過氧化氫、第三丁基過氧化氫、2,5-二甲基-2,5-二(第三丁基過氧化)己烯、2,5-二甲基-2,5-二(第三丁基過氧化)己烷、第三戊基過氧化-2-乙基己酸酯、第三丁基過氧化-2-乙基己酸酯、第三丁基過氧化異丁酸酯、第三丁基過氧化馬來酸酯、1,1-二(第三戊基過氧化)-3,3,5-三甲基環己烷、1,1-二(第三戊基過氧化)環己烷、第三戊基過氧化異壬酸酯、第三戊基過氧化正辛酸酯、1,1-二(第三丁基過氧化)-3,3,5-三甲基環己烷、1,1-二(第三丁基過氧化)環己烷、第三丁基過氧化異丙基碳酸酯、第三丁基過氧化-2-乙基己基碳酸酯、2,5-二甲基-2,5-二(苯甲醯基過氧化)己烷、第三戊基過氧化苯甲酸酯、第三丁基過氧化乙酸酯、第三丁基過氧化異壬酸酯、第三丁基過氧化苯甲酸酯、2,2-二(丁基過氧化)丁烷、正丁基-4,4-二(第三丁基過氧化)丁酸酯、過氧化甲基乙基酮、乙基-3,3-二(第三丁基過氧化)丁酸酯、過氧化二枯基、過氧化第三丁基枯基、第三丁基過氧化苯甲酸酯、過氧化二-第三丁基、1,1,3,3-四甲基丁基過氧化氫、過氧化乙醯丙酮等中的一種或兩種以上。As the organic peroxide, for example, a group selected from the group consisting of dilauryl peroxide, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, dibenzyl peroxide, Cyclohexanone peroxide, di-tert-butyl perphthalate, cumene hydroperoxide, tert-butyl hydroperoxide, 2,5-dimethyl-2,5-bis(tertiary Butylperoxy)hexene, 2,5-dimethyl-2,5-di(tert-butylperoxy)hexane, tert-amylperoxy-2-ethylhexanoate, tert-butylperoxy Peroxy-2-ethylhexanoate, tert-butylperoxyisobutyrate, tert-butylperoxymaleate, 1,1-bis(tert-amylperoxy)-3, 3,5-trimethylcyclohexane, 1,1-bis(3rd amylperoxy)cyclohexane, 3rd amylperoxyisononanoate, 3rd amylperoxyn-octanoate, 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(tert-butylperoxy)cyclohexane, tert-butylperoxy Isopropyl carbonate, tert-butyl peroxy-2-ethylhexyl carbonate, 2,5-dimethyl-2,5-bis(benzyl peroxy) hexane, tert-amyl peroxy Oxybenzoate, tert-butyl peroxyacetate, tert-butyl peroxy isononanoate, tert-butyl peroxybenzoate, 2,2-di(butylperoxy)butyrate Alkane, n-butyl-4,4-bis(tert-butylperoxy)butyrate, methyl ethyl ketone peroxide, ethyl-3,3-bis(tert-butylperoxy)butyrate , Dicumyl peroxide, tert-butyl cumyl peroxide, tert-butyl peroxybenzoate, di-tert-butyl peroxide, 1,1,3,3-tetramethylbutyl peroxide One or more of hydrogen oxide, acetone acetone peroxide, etc.

該些中,較佳為使用選自2,5-二甲基-2,5-二(第三丁基過氧化)己烯、2,5-二甲基-2,5-二(第三丁基過氧化)己烷、第三丁基過氧化-2-乙基己基碳酸酯、第三丁基過氧化苯甲酸酯中的一種或兩種以上。Among these, it is preferable to use a group selected from the group consisting of 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexene, 2,5-dimethyl-2,5-bis(tertiary) One or more of butyl peroxy) hexane, tertiary butyl peroxy-2-ethylhexyl carbonate and tertiary butyl peroxybenzoate.

作為光交聯起始劑,例如可使用選自由二苯甲酮、二苯甲酮衍生物、硫雜蒽酮、硫雜蒽酮衍生物、安息香、安息香衍生物、α-羥基苯烷基酮類、α-胺基烷基酚類、醯基氧化膦類、烷基苯基乙醛酸酯類、二乙氧基苯乙酮、肟酯類、二茂鈦化合物、蒽醌衍生物所組成的群組中的一種或兩種以上。其中,就交聯性更良好的方面而言,較佳為二苯甲酮、二苯甲酮衍生物、安息香、安息香衍生物、α-羥基苯烷基酮類、肟酯類、蒽醌衍生物,進而佳為二苯甲酮、二苯甲酮衍生物、蒽醌衍生物,二苯甲酮、二苯甲酮衍生物由於透明性亦良好,因此最佳。 作為二苯甲酮及二苯甲酮衍生物的較佳例,可列舉二苯甲酮、4-苯基二苯甲酮、4-苯氧基二苯甲酮、4,4-雙(二乙基胺基)二苯甲酮、鄰苯甲醯基苯甲酸甲酯、4-甲基二苯甲酮、2,4,6-三甲基二苯甲酮等。 作為蒽醌衍生物的較佳例,可列舉2-甲基蒽醌、2-乙基蒽醌、2-第三丁基蒽醌、1-氯蒽醌等。As the photocrosslinking initiator, for example, benzophenones, benzophenone derivatives, thioxanthones, thioxanthone derivatives, benzoin, benzoin derivatives, α-hydroxyphenalkyl ketones can be used Compounds, α-amino alkylphenols, acylphosphine oxides, alkylphenyl glyoxylates, diethoxyacetophenones, oxime esters, titanocene compounds, anthraquinone derivatives one or more of the groups. Among them, benzophenone, benzophenone derivatives, benzoin, benzoin derivatives, α-hydroxybenzoin alkyl ketones, oxime esters, and anthraquinone derivatives are preferred in terms of better crosslinking properties. more preferably benzophenone, benzophenone derivatives, and anthraquinone derivatives, and benzophenone and benzophenone derivatives are most preferred because of their good transparency. Preferable examples of benzophenone and benzophenone derivatives include benzophenone, 4-phenylbenzophenone, 4-phenoxybenzophenone, 4,4-bis(bis(bis(bis(bis(bis(bis(bis(bis(bis(bis))) ethylamino) benzophenone, methyl o-benzoylbenzoate, 4-methylbenzophenone, 2,4,6-trimethylbenzophenone, etc. Preferable examples of anthraquinone derivatives include 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquinone, and the like.

另外,就進一步提高耐熱性的觀點而言,凹凸吸收性樹脂層30較佳為進而包含交聯助劑。 作為交聯助劑,例如可使用選自由二乙烯基芳香族化合物、三聚氰酸酯化合物、二烯丙基化合物、丙烯酸酯化合物、三烯丙基化合物、肟化合物及馬來醯亞胺化合物所組成的群組中的一種或兩種以上。 相對於乙烯系共聚物100質量份,凹凸吸收性樹脂層30中的交聯助劑的含量較佳為5.0質量份以下,更佳為2.0質量份以下,尤佳為1.0質量份以下。 另外,相對於乙烯系共聚物100質量份,凹凸吸收性樹脂層30中的交聯助劑的含量較佳為0.01質量份以上,更佳為0.05質量份以上,進而佳為0.10質量份以上。Moreover, it is preferable that the uneven|corrugated-absorptive resin layer 30 further contains a crosslinking adjuvant from the viewpoint of further improving heat resistance. As the crosslinking aid, for example, a divinyl aromatic compound, a cyanurate compound, a diallyl compound, an acrylate compound, a triallyl compound, an oxime compound, and a maleimide compound can be used. One or more of the group formed. The content of the crosslinking aid in the uneven absorbent resin layer 30 is preferably 5.0 parts by mass or less, more preferably 2.0 parts by mass or less, and particularly preferably 1.0 parts by mass or less, relative to 100 parts by mass of the ethylene-based copolymer. The content of the crosslinking aid in the uneven absorbent resin layer 30 is preferably 0.01 part by mass or more, more preferably 0.05 part by mass or more, and still more preferably 0.10 part by mass or more with respect to 100 parts by mass of the ethylene-based copolymer.

作為二乙烯基芳香族化合物,例如可列舉二乙烯基苯、二-異丙烯基苯等。 作為三聚氰酸酯化合物,例如可列舉三烯丙基三聚氰酸酯、三烯丙基異三聚氰酸酯等。 作為二烯丙基化合物,例如可列舉鄰苯二甲酸二烯丙酯等。 作為三烯丙基化合物,例如可列舉季戊四醇三烯丙醚等。 作為丙烯酸酯化合物,例如可列舉:二乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、二丙二醇二丙烯酸酯、三丙二醇二丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等。 作為肟化合物,例如可列舉對醌二肟、p-p'-二苯甲醯基醌二肟等。 作為馬來醯亞胺化合物,例如可列舉間苯二馬來醯亞胺等。 作為交聯助劑,較佳為一分子中具有三官能以上的乙烯基等交聯性不飽和鍵的化合物,其中,就交聯性良好的方面而言,較佳為三烯丙基三聚氰酸酯、三烯丙基異三聚氰酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯,尤佳為三烯丙基三聚氰酸酯及三烯丙基異三聚氰酸酯。As a divinyl aromatic compound, divinylbenzene, di-isopropenylbenzene, etc. are mentioned, for example. As a cyanurate compound, triallyl cyanurate, triallyl isocyanurate, etc. are mentioned, for example. As a diallyl compound, diallyl phthalate etc. are mentioned, for example. As a triallyl compound, pentaerythritol triallyl ether etc. are mentioned, for example. As the acrylate compound, for example, diethylene glycol diacrylate, triethylene glycol diacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, trimethylolpropane tri(meth)acrylate, Di-trimethylolpropane tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, and the like. As an oxime compound, p-quinone dioxime, p-p'- dibenzoyl quinone dioxime, etc. are mentioned, for example. As a maleimide compound, isophthalimide etc. are mentioned, for example. As the crosslinking aid, a compound having a crosslinkable unsaturated bond such as a trifunctional or more vinyl group in one molecule is preferable, and among them, triallyl trimer is preferable in terms of good crosslinkability Cyanate ester, triallyl isocyanurate, trimethylolpropane tri(meth)acrylate, di-trimethylolpropane tetra(meth)acrylate, especially triallyl cyanurate and triallyl isocyanurate.

凹凸吸收性樹脂層30的厚度若為可將電子零件10的電路形成面10A的凹凸埋入的厚度,則並無特別限制,例如較佳為10 μm以上、1000 μm以下,更佳為20 μm以上、900 μm以下,進而佳為30 μm以上、800 μm以下,尤佳為50 μm以上、700 μm以下。The thickness of the concavo-convex absorbing resin layer 30 is not particularly limited as long as it can embed the concavities and convexities of the circuit forming surface 10A of the electronic component 10. For example, it is preferably 10 μm or more and 1000 μm or less, more preferably 20 μm Not less than 900 μm, more preferably not less than 30 μm and not more than 800 μm, particularly preferably not less than 50 μm and not more than 700 μm.

於將電子零件10的電路形成面10A上存在的凸塊電極的高度設為H[μm]且將凹凸吸收性樹脂層30的厚度設為d[μm]時,H/d較佳為1以下,更佳為0.85以下,進而佳為0.7以下。若H/d為所述上限值以下,則可使黏著性積層膜50的厚度更薄,且使凹凸吸收性更良好。 H/d的下限並無特別限定,例如為0.01以上。凸塊電極的高度通常為2 μm以上、600 μm以下。When the height of the bump electrodes present on the circuit forming surface 10A of the electronic component 10 is set to H [μm] and the thickness of the unevenness absorbing resin layer 30 is set to d [μm], H/d is preferably 1 or less , more preferably 0.85 or less, still more preferably 0.7 or less. If H/d is below the said upper limit, the thickness of the adhesive laminated film 50 can be made thinner, and the unevenness|corrugation absorption property can be made more favorable. The lower limit of H/d is not particularly limited, but is, for example, 0.01 or more. The height of the bump electrodes is usually 2 μm or more and 600 μm or less.

<黏著性樹脂層> 黏著性樹脂層40為設置於凹凸吸收性樹脂層30的其中一面側的層,是於將黏著性積層膜50貼附於電子零件10的電路形成面10A時,與電子零件10的電路形成面10A接觸而黏著的層。<Adhesive resin layer> The adhesive resin layer 40 is a layer provided on one side of the concavo-convex absorbing resin layer 30 , and is used to form a contact with the circuit forming surface of the electronic component 10 when the adhesive laminated film 50 is attached to the circuit forming surface 10A of the electronic component 10 . 10A Contact and stick layers.

構成黏著性樹脂層40的黏著劑可列舉:(甲基)丙烯酸系黏著劑、矽酮系黏著劑、胺基甲酸酯系黏著劑、烯烴系黏著劑、苯乙烯系黏著劑等。該些中,就可容易調整黏接力的方面等而言,較佳為將(甲基)丙烯酸系聚合物作為基礎聚合物的(甲基)丙烯酸系黏著劑。As an adhesive which comprises the adhesive resin layer 40, a (meth)acrylic-type adhesive, a silicone-type adhesive, a urethane-type adhesive, an olefin-type adhesive, a styrene-type adhesive, etc. are mentioned. Among these, the (meth)acrylic-type adhesive which uses a (meth)acrylic-type polymer as a base polymer is preferable from the point which can adjust adhesive force easily.

另外,作為構成黏著性樹脂層40的黏著劑,亦可使用藉由放射線而使黏著力下降的放射線交聯型黏著劑。由放射線交聯型黏著劑所構成的黏著性樹脂層40藉由放射線的照射而交聯,黏著力顯著減少,因此於將後述的電子零件10與黏著性積層膜50剝離的步驟(C)中,容易自黏著性樹脂層40剝離電子零件10。放射線可列舉紫外線、電子束、紅外線等。 放射線交聯型黏著劑較佳為紫外線交聯型黏著劑。Moreover, as an adhesive which comprises the adhesive resin layer 40, the radiation crosslinking type adhesive whose adhesive force is reduced by radiation can also be used. The adhesive resin layer 40 composed of the radiation cross-linkable adhesive is cross-linked by irradiation with radiation, and the adhesive force is remarkably reduced. Therefore, in the step (C) of peeling the electronic component 10 and the adhesive laminated film 50 to be described later , the electronic component 10 is easily peeled off from the adhesive resin layer 40 . Examples of the radiation include ultraviolet rays, electron beams, infrared rays, and the like. The radiation cross-linked adhesive is preferably an ultraviolet cross-linked adhesive.

(甲基)丙烯酸系黏著劑中所含的(甲基)丙烯酸系聚合物例如可列舉:(甲基)丙烯酸酯化合物的均聚物、(甲基)丙烯酸酯化合物與共聚單體的共聚物等。(甲基)丙烯酸酯化合物例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸縮水甘油酯等。該些(甲基)丙烯酸酯化合物可單獨使用一種,亦可併用兩種以上。 另外,構成(甲基)丙烯酸系共聚物的共聚單體例如可列舉:乙酸乙烯基酯、(甲基)丙烯腈、苯乙烯、(甲基)丙烯酸、衣康酸、(甲基)丙烯醯胺、羥甲基(甲基)丙烯醯胺、馬來酸酐等。該些共聚單體可單獨使用一種,亦可併用兩種以上。The (meth)acrylic polymer contained in the (meth)acrylic pressure-sensitive adhesive includes, for example, a homopolymer of a (meth)acrylate compound and a copolymer of a (meth)acrylate compound and a comonomer. Wait. For example, the (meth)acrylate compound includes methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate ) hydroxyethyl acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, and the like. These (meth)acrylate compounds may be used alone or in combination of two or more. In addition, examples of comonomers constituting the (meth)acrylic copolymer include vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, and (meth)acrylonitrile. Amine, methylol (meth)acrylamide, maleic anhydride, etc. These comonomers may be used alone or in combination of two or more.

放射線交聯型黏著劑例如包含:所述(甲基)丙烯酸系聚合物、交聯性化合物(具有碳-碳雙鍵的成分)、以及光聚合起始劑或熱聚合起始劑。The radiation crosslinkable adhesive contains, for example, the above-mentioned (meth)acrylic polymer, a crosslinkable compound (component having a carbon-carbon double bond), and a photopolymerization initiator or a thermal polymerization initiator.

交聯性化合物例如可列舉:分子中具有碳-碳雙鍵,可藉由自由基聚合而交聯的單體、寡聚物或聚合物等。所述交聯性化合物例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯等(甲基)丙烯酸與多元醇的酯;酯(甲基)丙烯酸酯寡聚物;2-丙烯基二-3-丁烯基三聚氰酸酯、2-羥基乙基雙(2-(甲基)丙烯醯氧基乙基)異三聚氰酸酯、三(2-甲基丙烯醯氧基乙基)異三聚氰酸酯等異三聚氰酸酯或者異三聚氰酸酯化合物等。 再者,於(甲基)丙烯酸系聚合物為於聚合物的側鏈上具有碳-碳雙鍵的放射線交聯型聚合物的情況下,亦可不添加交聯性化合物。The crosslinkable compound includes, for example, a monomer, an oligomer, or a polymer that has a carbon-carbon double bond in the molecule and can be crosslinked by radical polymerization. Examples of the crosslinkable compound include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, and 1,6-hexanedi Alcohol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, di-trimethylolpropane tetra(meth)acrylate, etc. (methyl) Esters of acrylic acid and polyols; ester (meth)acrylate oligomers; 2-propenyl di-3-butenyl cyanurate, 2-hydroxyethyl bis(2-(meth)acrylamide) oxyethyl) isocyanurate, tris(2-methacryloyloxyethyl) isocyanurate or other isocyanurates, isocyanurate compounds, or the like. In addition, when a (meth)acrylic-type polymer is a radiation crosslinking type polymer which has a carbon-carbon double bond in the side chain of a polymer, a crosslinkable compound may not be added.

相對於(甲基)丙烯酸系聚合物100質量份,交聯性化合物的含量較佳為1質量份~900質量份,更佳為2質量份~100質量份,進而佳為5質量份~50質量份。藉由交聯性化合物的含量為所述範圍,與少於所述範圍的情況相比,黏著力的調整變得容易,且與多於所述範圍的情況相比,難以產生由於對熱或光的感度過高而引起的保存穩定性的下降。The content of the crosslinkable compound is preferably 1 part by mass to 900 parts by mass, more preferably 2 parts by mass to 100 parts by mass, and still more preferably 5 parts by mass to 50 parts by mass relative to 100 parts by mass of the (meth)acrylic polymer. parts by mass. When the content of the crosslinkable compound is in the above range, the adjustment of the adhesive force becomes easier compared with the case where the content is less than the above range, and it is less likely to occur due to heat or heat than when the content exceeds the above range. Deterioration of storage stability due to excessively high light sensitivity.

光聚合起始劑只要為藉由照射放射線而開裂生成自由基的化合物即可,例如可列舉:安息香甲醚、安息香異丙醚、安息香異丁醚等安息香烷基醚類;苄基、安息香、二苯甲酮、α-羥基環己基苯基酮等芳香族酮類;苄基二甲基縮酮等芳香族縮酮類;聚乙烯基二苯甲酮;氯硫雜蒽酮、十二烷基硫雜蒽酮、二甲基硫雜蒽酮、二乙基硫雜蒽酮等硫雜蒽酮類等。The photopolymerization initiator may be a compound that is cleaved by irradiation with radiation to generate radicals, and examples thereof include benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; benzyl, benzoin, Aromatic ketones such as benzophenone and α-hydroxycyclohexyl phenyl ketone; aromatic ketals such as benzyl dimethyl ketal; polyvinyl benzophenone; chlorothioxanthone, dodecane thioxanthones such as thioxanthone, dimethylthioxanthone, diethylthioxanthone, etc.

熱聚合起始劑例如可列舉有機過氧化物衍生物或偶氮系聚合起始劑等。就加熱時不會產生氮的方面而言,較佳為有機過氧化物衍生物。熱聚合起始劑例如可列舉:酮過氧化物、過氧化縮酮、氫過氧化物、二烷基過氧化物、二醯基過氧化物、過氧化酯及過氧化二碳酸酯等。As a thermal polymerization initiator, an organic peroxide derivative, an azo type polymerization initiator, etc. are mentioned, for example. In terms of not generating nitrogen during heating, organic peroxide derivatives are preferred. As a thermal polymerization initiator, a ketone peroxide, a peroxyketal, a hydroperoxide, a dialkyl peroxide, a diacyl peroxide, a peroxyester, a peroxydicarbonate, etc. are mentioned, for example.

黏著劑中亦可添加交聯劑。交聯劑例如可列舉:山梨糖醇聚縮水甘油醚、聚丙三醇聚縮水甘油醚、季戊四醇聚縮水甘油醚、二丙三醇聚縮水甘油醚等環氧系化合物;四羥甲基甲烷-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羧基醯胺)、N,N'-六亞甲基-1,6-雙(1-氮丙啶羧基醯胺)等氮丙啶系化合物;四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、聚異氰酸酯等異氰酸酯系化合物等。 就提高黏著性樹脂層40的耐熱性或與密合力的平衡的觀點而言,相對於(甲基)丙烯酸系聚合物100質量份,交聯劑的含量較佳為0.1質量份以上、10質量份以下。A crosslinking agent can also be added to the adhesive. Examples of crosslinking agents include epoxy-based compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglyceryl polyglycidyl ether; tetramethylolmethane-triglyceride -β-aziridine propionate, trimethylolpropane-tri-β-aziridine propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridine aziridine-based compounds such as pyridinecarboxyamide), N,N'-hexamethylene-1,6-bis(1-aziridinecarboxyamide); tetramethylene diisocyanate, hexamethylene diisocyanate Isocyanate-based compounds such as isocyanates and polyisocyanates, and the like. From the viewpoint of improving the heat resistance of the adhesive resin layer 40 or the balance with the adhesive force, the content of the crosslinking agent is preferably 0.1 part by mass or more and 10 parts by mass relative to 100 parts by mass of the (meth)acrylic polymer. copies or less.

黏著性樹脂層40的厚度並無特別限制,例如較佳為1 μm以上、100 μm以下,更佳為3 μm以上、50 μm以下。The thickness of the adhesive resin layer 40 is not particularly limited. For example, it is preferably 1 μm or more and 100 μm or less, and more preferably 3 μm or more and 50 μm or less.

黏著性樹脂層40例如可藉由在凹凸吸收性樹脂層30上塗佈黏著劑塗佈液而形成。 塗佈黏著劑塗佈液的方法可採用現有公知的塗佈方法,例如:輥塗佈機法、反向輥塗佈機法、凹版輥法、棒塗法、缺角輪塗佈機法、模塗佈機法等。對所塗佈的黏著劑的乾燥條件並無特別限制,一般而言較佳為於80℃~200℃的溫度範圍內乾燥10秒~10分鐘。進而佳為於80℃~170℃下乾燥15秒~5分鐘。為了充分促進交聯劑與黏著劑的交聯反應,亦可於黏著劑塗佈液的乾燥結束後,於40℃~80℃下加熱5小時~300小時左右。The adhesive resin layer 40 can be formed by, for example, applying an adhesive coating liquid on the unevenness absorbent resin layer 30 . The method of coating the adhesive coating liquid can adopt the existing known coating methods, such as: roll coater method, reverse roll coater method, gravure roll method, bar coating method, notch wheel coater method, Die coater method, etc. The drying conditions of the applied adhesive are not particularly limited, but generally, drying in a temperature range of 80° C. to 200° C. for 10 seconds to 10 minutes is preferable. More preferably, it is dried for 15 seconds to 5 minutes at 80°C to 170°C. In order to fully promote the crosslinking reaction between the crosslinking agent and the adhesive, after the drying of the adhesive coating liquid is completed, it may be heated at 40°C to 80°C for about 5 hours to 300 hours.

關於本實施形態的黏著性積層膜50,於使凹凸吸收性樹脂層30紫外線硬化或使黏著性樹脂層40紫外線交聯的情況下,需要以使所述硬化或交聯不妨礙本發明的目的的程度具有光線透過率。Regarding the adhesive laminated film 50 of the present embodiment, when curing the unevenness absorbing resin layer 30 with ultraviolet rays or crosslinking the adhesive resin layer 40 with ultraviolet rays, it is necessary that the curing or crosslinking does not hinder the object of the present invention The degree of light transmittance.

就機械特性與操作性的平衡而言,本實施形態的黏著性積層膜50整體的厚度較佳為25 μm以上、1100 μm以下,更佳為100 μm以上、900 μm以下,進而佳為200 μm以上、800 μm以下。In terms of balance between mechanical properties and handleability, the overall thickness of the adhesive laminated film 50 of the present embodiment is preferably 25 μm or more and 1100 μm or less, more preferably 100 μm or more and 900 μm or less, and still more preferably 200 μm. Above and below 800 μm.

本實施形態的黏著性積層膜50可於各層之間設置黏接層(未圖示)。藉由該黏接層,可提高各層之間的黏接性。In the adhesive laminated film 50 of the present embodiment, an adhesive layer (not shown) may be provided between the layers. The adhesiveness between the layers can be improved by the adhesive layer.

繼而,對本實施形態的黏著性積層膜50的製造方法的一例進行說明。 首先,於基材層20的其中一面上,利用擠出層壓法來形成凹凸吸收性樹脂層30。繼而,藉由在凹凸吸收性樹脂層30上塗佈黏著劑塗佈液,使其乾燥而形成黏著性樹脂層40,獲得黏著性積層膜50。 另外,基材層20與凹凸吸收性樹脂層30可藉由共擠出成形而形成,亦可將膜狀的基材層20與膜狀的凹凸吸收性樹脂層30進行層壓(積層)而形成。Next, an example of the manufacturing method of the adhesive laminated film 50 of this embodiment is demonstrated. First, on one surface of the base material layer 20, the uneven|corrugated absorbent resin layer 30 is formed by the extrusion lamination method. Next, the adhesive resin layer 40 is formed by applying the adhesive coating liquid on the unevenness absorbent resin layer 30 and drying, and the adhesive laminated film 50 is obtained. In addition, the base material layer 20 and the concavo-convex absorbent resin layer 30 may be formed by co-extrusion molding, or may be formed by laminating (laminating) the film-shaped base material layer 20 and the film-shaped concavo-convex absorbent resin layer 30 . form.

2.電子裝置的製造方法 其次,對本實施形態的電子裝置的製造方法的各步驟進行說明。 圖2的(A)、圖2的(B)是示意性地表示本發明的實施形態的電子裝置的製造方法的一例的剖面圖。 本實施形態的電子裝置的製造方法包括以下的步驟(A)及步驟(B)。 (A)準備步驟,準備包括電子零件10、黏著性積層膜50及熱硬化性保護膜70的結構體60,所述電子零件10具有電路形成面10A,所述黏著性積層膜50貼附於電子零件10的電路形成面10A側,所述熱硬化性保護膜70貼附於電子零件10的與電路形成面10A為相反側的面10C (B)熱硬化步驟,藉由對結構體60進行加熱來使熱硬化性保護膜70熱硬化 此處,電子零件10的電路形成面10A與黏著性樹脂層40相接。2. Manufacturing method of electronic device Next, each step of the manufacturing method of the electronic device of the present embodiment will be described. FIGS. 2(A) and 2(B) are cross-sectional views schematically showing an example of a method of manufacturing an electronic device according to an embodiment of the present invention. The manufacturing method of the electronic device of this embodiment includes the following steps (A) and (B). (A) A preparation step for preparing a structure 60 including an electronic component 10 having a circuit forming surface 10A, an adhesive laminate film 50 and a thermosetting protective film 70 , and the adhesive laminate film 50 is attached to On the circuit forming surface 10A side of the electronic component 10 , the thermosetting protective film 70 is attached to the surface 10C on the opposite side to the circuit forming surface 10A of the electronic component 10 (B) Thermosetting step of thermosetting the thermosetting protective film 70 by heating the structure 60 Here, the circuit formation surface 10A of the electronic component 10 is in contact with the adhesive resin layer 40 .

(步驟(A)) 首先,準備包括電子零件10、黏著性積層膜50及熱硬化性保護膜70的結構體60,所述電子零件10具有電路形成面10A,所述黏著性積層膜50貼附於電子零件10的電路形成面10A側,所述熱硬化性保護膜70貼附於電子零件10的與電路形成面10A為相反側的面10C。(step (A)) First, a structure 60 including an electronic component 10 having a circuit forming surface 10A, an adhesive laminate film 50 and a thermosetting protective film 70 is prepared, and the adhesive laminate film 50 is attached to the electronic component 10 . On the circuit formation surface 10A side, the thermosetting protective film 70 is attached to the surface 10C of the electronic component 10 on the opposite side to the circuit formation surface 10A.

所述結構體60例如可藉由進行於電子零件10的電路形成面10A貼附黏著性積層膜50的步驟(A1)、以及在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)來製作。The structure 60 can be attached to the surface 10C of the electronic component 10 on the opposite side to the circuit formation surface 10A by, for example, the step (A1) of attaching the adhesive laminate film 50 to the circuit formation surface 10A of the electronic component 10 . The thermosetting protective film 70 is attached to the step (A2) to produce.

於電子零件10的電路形成面10A貼附黏著性積層膜50的方法並無特別限定,可利用一般公知的方法剝離。例如,可由人手進行,亦可由安裝了輥狀的黏著性積層膜50的被稱為自動貼附機的裝置進行。The method of adhering the adhesive laminate film 50 to the circuit formation surface 10A of the electronic component 10 is not particularly limited, and it can be peeled off by a generally known method. For example, it may be performed manually, or it may be performed by an apparatus called an automatic sticker to which the roll-shaped adhesive laminated film 50 is attached.

在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的方法並無特別限定,可利用一般公知的方法剝離。例如,可由人手進行,亦可由安裝了輥狀的熱硬化性保護膜70的被稱為自動貼附機的裝置進行。The method of attaching the thermosetting protective film 70 to the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A is not particularly limited, and it can be peeled off by a generally known method. For example, it may be performed manually, or may be performed by an apparatus called an automatic sticker to which the roll-shaped thermosetting protective film 70 is attached.

在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)例如於對熱硬化性保護膜70進行加熱的同時進行。步驟(A2)中的加熱溫度根據熱硬化性保護膜70的種類適當設定,因此並無特別限定,例如為50℃以上、90℃以下,較佳為60℃以上、80℃以下。The step (A2) of attaching the thermosetting protective film 70 to the surface 10C opposite to the circuit forming surface 10A of the electronic component 10 is performed while heating the thermosetting protective film 70 , for example. The heating temperature in step (A2) is appropriately set according to the type of the thermosetting protective film 70 and is not particularly limited, but is, for example, 50°C or higher and 90°C or lower, preferably 60°C or higher and 80°C or lower.

作為熱硬化性保護膜70,並無特別限定,例如可使用公知的熱硬化型半導體背面保護用膜。 熱硬化性保護膜70例如包括熱硬化性接著劑層,亦可視需要進一步包括保護層。 作為接著劑層,較佳為由熱硬化性樹脂形成,更佳為由熱硬化性樹脂及熱塑性樹脂形成。 作為熱硬化性樹脂,例如可列舉環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、矽酮樹脂、熱硬化性聚醯亞胺樹脂等。該些熱硬化性樹脂可使用一種或兩種以上。該些中,較佳為離子性雜質等含量少的環氧樹脂。 作為熱塑性樹脂,例如可列舉天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯基酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、聚醯胺樹脂、苯氧基樹脂、丙烯酸樹脂、聚對苯二甲酸乙二酯或聚對苯二甲酸丁二酯等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。該些熱塑性樹脂可使用一種或兩種以上。該些中,較佳為離子性雜質等含量少的丙烯酸樹脂。It does not specifically limit as the thermosetting protective film 70, For example, a well-known thermosetting type semiconductor back surface protection film can be used. The thermosetting protective film 70 includes, for example, a thermosetting adhesive layer, and may further include a protective layer as needed. The adhesive layer is preferably formed of a thermosetting resin, and more preferably formed of a thermosetting resin and a thermoplastic resin. As a thermosetting resin, an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, etc. are mentioned, for example. One or two or more of these thermosetting resins can be used. Among these, epoxy resins with a small content of ionic impurities and the like are preferred. Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin, phenoxy resin, acrylic resin, saturated polyester such as polyethylene terephthalate or polybutylene terephthalate Resin, polyamide imide resin, fluororesin, etc. One or two or more of these thermoplastic resins can be used. Among these, acrylic resins with a small content of ionic impurities and the like are preferred.

接著劑層可視需要含有其他添加劑。作為其他添加劑,例如可列舉填充劑、阻燃劑、矽烷偶合劑、離子捕捉劑、增量劑、抗老化劑、抗氧化劑、界面活性劑等。The adhesive layer may contain other additives as needed. As other additives, a filler, a flame retardant, a silane coupling agent, an ion scavenger, an extender, an antiaging agent, an antioxidant, a surfactant, etc. are mentioned, for example.

保護層例如由耐熱性樹脂、金屬等構成。 作為構成保護層的耐熱性樹脂,並無特別限定,例如可列舉聚苯硫醚、聚醯亞胺、聚醚醯亞胺、聚芳酯、聚碸、聚醚碸、聚醚醚酮、液晶聚合物、聚四氟乙烯等。該些中,可列舉聚醯亞胺、聚苯硫醚、聚碸、聚醚醯亞胺、聚醚酮、聚醚醚酮等。 作為構成保護層的金屬,並無特別限定,例如可列舉鋁、耐酸鋁(alumite)、不鏽鋼、鐵、鈦、錫、銅等。The protective layer is made of, for example, a heat-resistant resin, metal, or the like. The heat-resistant resin constituting the protective layer is not particularly limited, and examples thereof include polyphenylene sulfide, polyimide, polyetherimide, polyarylate, polyether, polyetherether, polyetheretherketone, liquid crystal polymer, teflon, etc. Among these, polyimide, polyphenylene sulfide, polysulfide, polyetherimide, polyether ketone, polyether ether ketone, etc. are mentioned. Although it does not specifically limit as a metal which comprises a protective layer, For example, aluminum, alumite, stainless steel, iron, titanium, tin, copper, etc. are mentioned.

熱硬化性保護膜70可使用市售的膜。作為市售的膜,例如可列舉琳得科(Lintec)公司製造的晶片背面保護膠帶(製品名:「LC膠帶」系列)等。A commercially available film can be used for the thermosetting protective film 70 . As a commercially available film, the wafer back surface protection tape (product name: "LC tape" series) by Lintec Corporation, etc. are mentioned, for example.

作為電子零件10,只要為具有電路形成面10A的電子零件10,則並無特別限定,例如可列舉:半導體晶圓、藍寶石基板、鉭酸鋰基板、模具晶圓、模具面板、模具陣列封裝、半導體基板等。 另外,作為半導體基板,例如可列舉:矽基板、鍺基板、鎵-砷基板、鎵-磷基板、鎵-砷-鋁基板、鎵-砷基板等。The electronic component 10 is not particularly limited as long as it has the circuit forming surface 10A, and examples thereof include semiconductor wafers, sapphire substrates, lithium tantalate substrates, die wafers, die panels, die array packages, Semiconductor substrates, etc. Moreover, as a semiconductor substrate, a silicon substrate, a germanium substrate, a gallium-arsenic substrate, a gallium-phosphorus substrate, a gallium-arsenic-aluminum substrate, a gallium-arsenic substrate, etc. are mentioned, for example.

另外,電子零件10可為任意用途的電子零件,例如可列舉邏輯用途(例如通信用途、高頻信號處理用途等)、記憶用途、感測器用途、電源用途的電子零件等。該些可僅使用一種,亦可併用兩種以上。In addition, the electronic component 10 may be an electronic component of any application, for example, an electronic component of logic application (eg, communication application, high-frequency signal processing application, etc.), memory application, sensor application, power supply application, and the like. Only one type of these may be used, or two or more types may be used in combination.

電子零件10的電路形成面10A例如藉由具有電極10B而成為凹凸結構。 另外,電極10B是於將電子裝置安裝於安裝面時與形成於安裝面上的電極接合而形成電子裝置與安裝面(印刷基板等的安裝面)之間的電性連接者。 作為電極10B,例如可列舉球凸塊、印刷凸塊、螺栓凸塊、鍍敷凸塊、柱凸塊等凸塊電極。即,電極10B通常為凸電極。該些凸塊電極可單獨使用一種,亦可併用兩種以上。 另外,構成凸塊電極的金屬種並無特別限定,例如可列舉銀、金、銅、錫、鉛、鉍及該些的合金等。該些金屬種可單獨使用一種,亦可併用兩種以上。The circuit formation surface 10A of the electronic component 10 has the uneven|corrugated structure by having the electrode 10B, for example. The electrodes 10B are joined to electrodes formed on the mounting surface when the electronic device is mounted on the mounting surface to form an electrical connection between the electronic device and the mounting surface (a mounting surface such as a printed circuit board). Examples of the electrodes 10B include bump electrodes such as ball bumps, printed bumps, bolt bumps, plated bumps, and stud bumps. That is, the electrode 10B is usually a convex electrode. These bump electrodes may be used alone or in combination of two or more. In addition, the metal species constituting the bump electrodes is not particularly limited, and examples thereof include silver, gold, copper, tin, lead, bismuth, alloys thereof, and the like. These metal species may be used alone or in combination of two or more.

本實施形態的電子裝置的製造方法中,較佳為進行於在電子零件10的電路形成面10A貼附有黏著性積層膜50的狀態下,使黏著性積層膜50中的凹凸吸收性樹脂層30熱硬化或紫外線硬化的硬化步驟(A3)。藉此,可提高黏著性積層膜50的耐熱性。藉此,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可抑制電子零件10的翹曲。進而,於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)、或者使熱硬化性保護膜70熱硬化的熱硬化步驟(B)中,可抑制凹凸吸收性樹脂層30熔融而引起樹脂的溢出。硬化步驟(A3)並無特別限定,較佳為於在電子零件10的與電路形成面10A為相反側的面10C貼附熱硬化性保護膜70的步驟(A2)之前進行。In the manufacturing method of the electronic device of the present embodiment, it is preferable to perform the unevenness absorbing resin layer in the adhesive laminate film 50 in a state where the adhesive laminate film 50 is attached to the circuit forming surface 10A of the electronic component 10 . 30 Hardening step (A3) for heat hardening or UV hardening. Thereby, the heat resistance of the adhesive laminated film 50 can be improved. Thereby, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C opposite to the circuit forming surface 10A of the electronic component 10, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 ), the warpage of the electronic component 10 can be suppressed. Furthermore, the step (A2) of attaching the thermosetting protective film 70 to the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A, or the thermosetting step (B) of thermosetting the thermosetting protective film 70 Among them, it is possible to prevent the unevenness absorbent resin layer 30 from melting and overflowing of the resin. The curing step (A3) is not particularly limited, but is preferably performed before the step (A2) of attaching the thermosetting protective film 70 to the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A.

作為凹凸吸收性樹脂層30的熱硬化方法,只要是可使乙烯系共聚物熱硬化的方法即可,並無特別限定,可列舉利用自由基聚合起始劑進行的熱交聯。 利用自由基聚合起始劑進行的熱交聯可使用乙烯系共聚物的交聯中使用的自由基聚合起始劑。作為自由基聚合起始劑,可使用公知的熱自由基聚合起始劑。As a thermosetting method of the uneven|corrugated absorbent resin layer 30, if it is a method which can thermoset an ethylene type copolymer, it will not specifically limit, Thermal crosslinking by a radical polymerization initiator is mentioned. The thermal crosslinking by a radical polymerization initiator can use the radical polymerization initiator used for crosslinking of an ethylene type copolymer. As the radical polymerization initiator, a known thermal radical polymerization initiator can be used.

另外,藉由對凹凸吸收性樹脂層30照射紫外線,可使凹凸吸收性樹脂層30交聯而硬化。 紫外線例如從黏著性積層膜50的基材層20側的面照射。 另外,於任一交聯方法中,可對凹凸吸收性樹脂層30調配交聯助劑而進行凹凸吸收性樹脂層30的交聯。In addition, by irradiating the unevenness-absorbing resin layer 30 with ultraviolet rays, the unevenness-absorbing resin layer 30 can be bridged and cured. Ultraviolet rays are irradiated, for example, from the surface of the adhesive laminated film 50 on the side of the base material layer 20 . In addition, in any of the crosslinking methods, a crosslinking assistant may be prepared with respect to the unevenness absorptive resin layer 30 to perform crosslinking of the unevenness absorptive resin layer 30 .

本實施形態的電子裝置的製造方法中,亦可進行背面研磨步驟(A4),所述背面研磨步驟(A4)於在電子零件10的電路形成面10A貼附有黏著性積層膜50的狀態下,對電子零件10的與電路形成面10A為相反側的面10C進行背面研磨。即,可將本實施形態的黏著性積層膜50用作背面研磨膠帶。此處,若於背面研磨步驟(A4)之前進行硬化步驟(A3),則黏著性積層膜50的黏著力降低,因此於背面研磨步驟(A4)中,有黏著性積層膜50剝落之虞。因此,較佳為於硬化步驟(A3)之前進行背面研磨步驟(A4)。In the manufacturing method of the electronic device of the present embodiment, a back grinding step (A4) may be performed in a state where the adhesive laminate film 50 is adhered to the circuit formation surface 10A of the electronic component 10 . , the surface 10C of the electronic component 10 on the opposite side to the circuit formation surface 10A is back-polished. That is, the adhesive laminated film 50 of this embodiment can be used as a back grinding tape. Here, if the hardening step (A3) is performed before the back grinding step (A4), the adhesive force of the adhesive laminated film 50 is lowered, so that the adhesive laminated film 50 may be peeled off in the back grinding step (A4). Therefore, it is preferable to perform the back grinding|polishing process (A4) before the hardening process (A3).

於背面研磨步驟(A4)中,於貼附於黏著性積層膜50的狀態下,對電子零件10的與電路形成面10A為相反側的面10C進行背面研磨。 此處,所謂進行背面研磨,是指於不會使電子零件10破裂、或破損的情況下,進行薄化加工至既定的厚度為止。 電子零件10的背面研磨可利用公知的方法進行。例如,可列舉於研削機的夾盤等上固定電子零件10,對電子零件10的與電路形成面10A為相反側的面10C進行研削的方法。In a back grinding|polishing process (A4), back grinding|polishing is performed with respect to the surface 10C on the opposite side to the circuit formation surface 10A of the electronic component 10 in the state stuck to the adhesive laminated film 50. Here, performing back grinding means performing thinning processing to a predetermined thickness without breaking or breaking the electronic component 10 . Back grinding of the electronic component 10 can be performed by a well-known method. For example, a method of fixing the electronic component 10 on a chuck of a grinding machine, etc., and grinding the surface 10C of the electronic component 10 on the opposite side to the circuit forming surface 10A can be mentioned.

背面研削方式並無特別限定,例如可採用貫穿進給(through feed)方式、切入進給(in feed)方式等公知的研削方式。各種研削是一邊將水澆到電子零件10及研磨石上冷卻一邊進行。The back surface grinding method is not particularly limited, and for example, a known grinding method such as a through feed method and an in feed method can be adopted. Various grindings are performed while pouring water on the electronic components 10 and the grinding stone to cool.

(步驟(B)) 其次,藉由對結構體60進行加熱來使熱硬化性保護膜70熱硬化。(step (B)) Next, the thermosetting protective film 70 is thermally cured by heating the structure 60 .

使熱硬化性保護膜70熱硬化的步驟(B)中的加熱溫度根據熱硬化性保護膜70的種類適當設定,因此並無特別限定,例如為120℃以上、170℃以下,較佳為130℃以上、160℃以下。Since the heating temperature in the step (B) of thermosetting the thermosetting protective film 70 is appropriately set according to the type of the thermosetting protective film 70 , it is not particularly limited, but is, for example, 120° C. or higher and 170° C. or lower, preferably 130° C. ℃ or more and 160℃ or less.

(步驟(C)) 另外,本實施形態的電子裝置的製造方法中,亦可於步驟(B)之後進一步進行將電子零件10與黏著性積層膜50剝離的步驟(C)。藉由進行所述步驟(C),可從黏著性積層膜50剝離電子零件10。剝離溫度例如為20℃~100℃。 電子零件10與黏著性積層膜50的剝離可利用公知的方法進行。(step (C)) Moreover, in the manufacturing method of the electronic device of this embodiment, the step (C) of peeling the electronic component 10 and the adhesive laminated film 50 may be further performed after the step (B). By performing the step (C), the electronic component 10 can be peeled off from the adhesive laminate film 50 . The peeling temperature is, for example, 20°C to 100°C. The peeling of the electronic component 10 and the adhesive laminated film 50 can be performed by a well-known method.

(其他步驟) 本實施形態的電子裝置的製造方法亦可包括所述以外的其他步驟。作為其他步驟,可使用在電子裝置的製造方法中公知的步驟。(other steps) The manufacturing method of the electronic device of the present embodiment may include other steps than those described above. As another step, a known step in a manufacturing method of an electronic device can be used.

例如,亦可進一步進行金屬膜形成步驟、退火處理、切割步驟、晶粒結合步驟、打線接合步驟、倒裝晶片連接步驟、硬化加熱測試步驟、密封步驟、回流焊步驟等電子零件的製造步驟中通常進行的任意的步驟等。For example, the steps of manufacturing electronic parts such as metal film forming step, annealing treatment, dicing step, die bonding step, wire bonding step, flip chip bonding step, hardening heating test step, sealing step, reflow soldering step, etc. may be further performed. Arbitrary steps etc. which are usually performed.

以上,對本發明的實施形態進行敘述,但該些是本發明的例示,亦可採用所述以外的各種構成。As mentioned above, although embodiment of this invention was described, these are examples of this invention, and various structures other than the above may be employ|adopted.

再者,本發明並不限定於所述實施形態,可達成本發明的目的的範圍內的變形、改良等亦包括在本發明中。 [實施例]In addition, this invention is not limited to the said embodiment, The deformation|transformation, improvement, etc. within the range which can achieve the objective of this invention are also included in this invention. [Example]

以下,藉由實施例及比較例具體說明本發明,但本發明並不限定於此。 有關黏著性膜的製作的詳情如下所述。Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited thereto. Details of the production of the adhesive film are as follows.

<基材層> 基材層1:聚萘二甲酸乙二酯膜(製品名:泰耐斯(Teonex)Q81,東洋紡膜解決方案(toyobo film solution)公司製造,厚度:50 μm) 基材層2:聚對苯二甲酸乙二酯膜(東洋紡公司製造,製品名:E7180,厚度:50 μm)<Substrate layer> Substrate layer 1: polyethylene naphthalate film (product name: Teonex Q81, manufactured by Toyobo Film Solutions, thickness: 50 μm) Base material layer 2: polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm)

<凹凸吸收性樹脂層形成用樹脂> 樹脂1:乙烯-乙酸乙烯基酯共聚物(製品名:維波福萊(Evaflex)EV150,三井陶氏聚合化學(Mitsui Dow polychemical)公司製造,熔點:61℃) 樹脂2:乙烯-丙烯共聚物(製品名:塔夫瑪(TAFMER)A35070S,三井化學公司製造,熔點:55℃) 樹脂3:乙烯-丙烯共聚物(製品名:塔夫瑪(TAFMER)A4070,三井化學公司製造,熔點:55℃)<Resin for concavo-convex absorbent resin layer formation> Resin 1: Ethylene-vinyl acetate copolymer (product name: Evaflex EV150, manufactured by Mitsui Dow Polychemical, melting point: 61°C) Resin 2: Ethylene-propylene copolymer (product name: TAFMER A35070S, manufactured by Mitsui Chemicals, melting point: 55°C) Resin 3: Ethylene-propylene copolymer (product name: TAFMER A4070, manufactured by Mitsui Chemicals, melting point: 55°C)

<黏著劑聚合物(丙烯酸系樹脂)> 使丙烯酸正丁酯77質量份、甲基丙烯酸甲酯16質量份、丙烯酸2-羥基乙酯16質量份及作為聚合起始劑的第三丁基過氧化-2-乙基己酸酯0.3質量份於甲苯20質量份、乙酸乙酯80質量份中反應10小時。於反應結束後,將該溶液冷卻,向其中加入甲苯30質量份、甲基丙烯醯氧基乙基異氰酸酯(昭和電工(股)製造,製品名:卡萊資(Karenz)MOI)7質量份及二月桂酸二丁基錫0.05質量份,一邊吹入空氣一邊在85℃下反應12小時,獲得黏著劑聚合物溶液。<Adhesive polymer (acrylic resin)> 77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 mass parts of tert-butylperoxy-2-ethylhexanoate as a polymerization initiator parts were reacted in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate for 10 hours. After the completion of the reaction, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko Co., Ltd., product name: Karenz MOI) and 7 parts by mass were added. 0.05 mass part of dibutyltin dilaurate was reacted at 85 degreeC for 12 hours, blowing in air, and the adhesive polymer solution was obtained.

<黏著性樹脂層用黏著劑塗佈液> 相對於黏著劑聚合物(固體成分)100質量份,添加作為光起始劑的苄基二甲基縮酮(巴斯夫(BASF)公司製造,商品名:豔佳固(Irgacure)651)8質量份、異氰酸酯系交聯劑(三井化學公司製造,商品名:奧萊斯特(olester)P49-75S)2.33質量份、二-三羥甲基丙烷四丙烯酸酯(新中村化學工業公司製造,商品名:AD-TMP)6質量份,獲得黏著劑塗佈液。<Adhesive coating liquid for adhesive resin layer> 8 parts by mass of benzyl dimethyl ketal (manufactured by BASF, trade name: Irgacure 651) as a photoinitiator was added to 100 parts by mass of the adhesive polymer (solid content) , Isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals, trade name: olester P49-75S) 2.33 parts by mass, di-trimethylolpropane tetraacrylate (manufactured by Shin-Nakamura Chemical Industry, trade name : AD-TMP) 6 parts by mass to obtain an adhesive coating liquid.

[實施例1] 獲得將樹脂1(100質量份)、作為交聯助劑的三烯丙基異三聚氰酸酯(三菱化學公司製造,商品名:塔邁克(TMAIC))0.44質量份及作為交聯劑的第三丁基過氧化-2-乙基己基碳酸酯(阿科瑪(Arkema)吉富公司製造,商品名:魯派羅斯(LUPEROX)TBEC)0.32質量份乾式混合後的組成物。繼而,藉由熱壓機將利用實驗塑性磨機(LABO PLASTOMILL)熔融混煉而獲得的組成物成形為厚度500 μm,獲得凹凸吸收樹脂層。繼而,藉由將基材層1貼合在凹凸吸收樹脂層,來製作積層膜。[Example 1] Resin 1 (100 parts by mass), triallyl isocyanurate (manufactured by Mitsubishi Chemical Corporation, trade name: TMAIC) 0.44 parts by mass as a cross-linking aid, and 0.44 parts by mass as a cross-linking agent were obtained. The composition after dry mixing of 0.32 parts by mass of tertiary butylperoxy-2-ethylhexyl carbonate (manufactured by Arkema GIFT, trade name: LUPEROX TBEC). Next, the composition obtained by melt-kneading in a laboratory plastic mill (LABO PLASTOMILL) was molded into a thickness of 500 μm by a hot press to obtain a concavo-convex absorbing resin layer. Next, a laminated film is produced by bonding the base material layer 1 to the unevenness absorbing resin layer.

繼而,將黏著性樹脂層用黏著劑塗佈液塗佈在矽酮脫模處理後的聚對苯二甲酸乙二酯膜(38 μm)上,使其乾燥,形成厚度20 μm的黏著性樹脂層。繼而,藉由將所得的黏著性樹脂層貼合在所述積層膜的凹凸吸收性樹脂層側,獲得黏著性膜。對所得的黏著性膜進行以下各評價。將所得的結果示於表1中。Next, the adhesive coating solution for the adhesive resin layer was coated on the polyethylene terephthalate film (38 μm) after the silicone mold release treatment, and dried to form an adhesive resin with a thickness of 20 μm. Floor. Next, an adhesive film is obtained by bonding the obtained adhesive resin layer to the uneven|corrugated absorbent resin layer side of the said laminated film. The following evaluations were performed on the obtained adhesive film. The obtained results are shown in Table 1.

<評價> (1)乙烯系共聚物的熔點 乙烯系共聚物的熔點按照示差掃描式熱量測定法(Differential Scanning Calorimetry,DSC),藉由示差掃描式熱量計(SII公司製造,製品名:X-DSC7000)進行測定。將試樣約10 mg放入鋁盤中,以10℃/分鐘自30℃升溫至230℃後(第一次加熱),保持5分鐘。繼而,以10℃/分鐘冷卻至-100℃,保持5分鐘後,再次以10℃/分鐘升溫至230℃(第二次加熱)。在橫軸取溫度、縱軸取DSC時的第二次加熱時的圖表中,根據吸熱峰求出熔點。<Evaluation> (1) Melting point of vinyl copolymer The melting point of the ethylene-based copolymer was measured by a differential scanning calorimeter (manufactured by SII, product name: X-DSC7000) according to a differential scanning calorimetry (DSC). About 10 mg of a sample was put into an aluminum pan, and the temperature was raised from 30°C to 230°C at 10°C/min (first heating), and then kept for 5 minutes. Next, it cooled to -100 degreeC at 10 degreeC/min, after holding for 5 minutes, it heated up again to 230 degreeC at 10 degreeC/min (2nd heating). The melting point was obtained from the endothermic peak in the graph in which the abscissa is the temperature and the ordinate is the DSC at the time of the second heating.

(2)矽試驗片翹曲的評價 準備了將研削至75 μm的矽晶圓單片化為5 cm×2.5 cm的試驗片。將黏著性膜的黏著性樹脂層側的矽酮脫模處理後的聚對苯二甲酸乙二酯膜剝離,並貼合在加熱至70℃的加熱板上後,按照試驗片的尺寸切斷該黏著性膜,製作黏著性膜/矽試驗片積層體。然後,將積層體的矽試驗片側置於下方,以載置於矽酮脫模處理後的聚對苯二甲酸乙二酯的脫模面的狀態放入至加熱爐中,在150℃下加熱2小時30分鐘。然後,將取出的積層體靜置、放冷10分鐘後,將積層樣品的矽試驗片側置於下方,用手指自上方按壓積層樣品的一個短邊(2.5 cm寬)中央部,利用標尺測定此時抬起的另一個樣品短邊的中點距底面的高度,將該值設為翹曲。 按照以下基準對翹曲進行評價。 ◎:≦2 mm ○:2 mm<翹曲<4 mm ×:≧4 mm(2) Evaluation of warpage of silicon test piece A test piece of 5 cm x 2.5 cm was prepared by singulating a silicon wafer ground to 75 μm. The polyethylene terephthalate film after the silicone mold release treatment on the adhesive resin layer side of the adhesive film was peeled off, attached to a hot plate heated to 70°C, and then cut according to the size of the test piece. The adhesive film was produced as an adhesive film/silicon test piece laminate. Then, the silicon test piece side of the laminate was placed downward, placed on the mold release surface of the polyethylene terephthalate after the silicone mold release treatment, and placed in a heating furnace, and heated at 150° C. 2 hours 30 minutes. Then, the taken out layered body was left to stand for 10 minutes and left to cool, then the silicon test piece side of the layered sample was placed down, the center of one short side (2.5 cm wide) of the layered sample was pressed from above with a finger, and the value was measured with a ruler. The height of the midpoint of the short side of the other sample lifted from the bottom surface, and this value is set as the warp. The warpage was evaluated according to the following criteria. ◎: ≦ 2 mm ○: 2 mm < warpage < 4 mm ×: ≧4 mm

(3)凹凸吸收性樹脂層的滲出評價 目視確認凹凸吸收性樹脂層是否自翹曲評價後的試驗片端部滲出。另外,確認於滲出時滲出的樹脂層是否貼合在聚對苯二甲酸乙二酯膜。 按照以下基準對滲出進行評價。 ◎:無滲出 ○:有滲出,但並未貼合在矽酮脫模處理後的聚對苯二甲酸乙二酯 ×:有滲出,與矽酮脫模處理後的聚對苯二甲酸乙二酯貼合(3) Evaluation of bleed-out of uneven absorbent resin layer Whether or not the concavo-convex absorbent resin layer bleeds out from the end of the test piece after warpage evaluation was visually confirmed. In addition, it was confirmed whether or not the resin layer exuded during exudation was attached to the polyethylene terephthalate film. Bleeding was evaluated according to the following criteria. ◎: No bleeding ○: Exuded, but not adhered to polyethylene terephthalate after silicone mold release treatment ×: Exudation occurs, and it is adhered to polyethylene terephthalate after silicone mold release treatment

[實施例2~實施例4及比較例1、比較例2] 除了將基材層及凹凸吸收性樹脂層的種類變更為表1所示的種類以外,與實施例1同樣地分別製作黏著性膜。另外,與實施例1同樣地分別進行了各評價。將所得的結果分別示於表1中。[Example 2 to Example 4 and Comparative Example 1 and Comparative Example 2] Adhesive films were produced in the same manner as in Example 1, except that the types of the base material layer and the unevenness absorbent resin layer were changed to those shown in Table 1. In addition, each evaluation was performed similarly to Example 1, respectively. The obtained results are shown in Table 1, respectively.

[實施例5] 除了將基材層及凹凸吸收性樹脂層的種類變更為表1所示的種類以外,與實施例1同樣地分別製作黏著性膜。另外,在翹曲評價中,在將黏著性膜/矽試驗片積層體放入至加熱爐中之前在室溫下自黏著性膜側利用高壓水銀燈以照射強度100 mW/cm2 實施3240 mJ/cm2 的UV照射,除此以外,與實施例1同樣地分別進行了各評價。將所得的結果分別示於表1中。此處,作為光起始劑,使用4-甲基二苯甲酮(雙邦工業(SHUANG-BANG INDUSTRIAL)公司製造,商品名:SB-PI712)。[Example 5] Adhesive films were produced in the same manner as in Example 1, except that the types of the base material layer and the unevenness-absorbing resin layer were changed to those shown in Table 1. Further, in the evaluation of warpage before the adhesive film / silicon laminate test piece was placed in a heating furnace of the self-adhesive film side using a high pressure mercury lamp at room temperature at an irradiation intensity of 100 mW / cm 2 embodiment 3240 mJ / Each evaluation was performed in the same manner as in Example 1, except for the UV irradiation of cm 2 . The obtained results are shown in Table 1, respectively. Here, as the photoinitiator, 4-methylbenzophenone (manufactured by SHUANG-BANG INDUSTRIAL, trade name: SB-PI712) was used.

[表1] 表1 項目 單位 實施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 基材層 基材層的種類 - 基材層1 基材層1 基材層1 基材層1 基材層2 基材層1 基材層1 凹凸吸收性樹脂層 乙烯系共聚物①的種類 - 樹脂1 樹脂1 樹脂1 樹脂1 樹脂2 樹脂1 樹脂1 乙烯系共聚物①的熔點 61 61 61 61 55 61 61 乙烯系共聚物①的調配量 質量份 100 100 100 100 50 100 100 乙烯系共聚物②的種類 - - - - - 樹脂3 - - 乙烯系共聚物②的熔點 - - - - 55 - - 乙烯系共聚物②的調配量 質量份 0 0 0 0 50 0 0 有機過氧化物的調配量 質量份 0.32 0.2 0.16 0.08    0.64 0.04 光起始劑的調配量 質量份             0.5       交聯助劑的調配量 質量份 0.44 0.3 0.22 0.11 0.85 0.88 0.06 評價結果 試驗片翹曲 - ○ 3 mm ◎ 2 mm ◎ 2 mm ◎ 1 mm ◎ 1 mm × 4 mm ◎ 1 mm 滲出 - × [Table 1] Table 1 project unit Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 substrate layer Types of substrate layers - Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 2 Substrate layer 1 Substrate layer 1 Concavo-convex absorbent resin layer Types of vinyl copolymers ① - Resin 1 Resin 1 Resin 1 Resin 1 Resin 2 Resin 1 Resin 1 Melting point of vinyl copolymer ① °C 61 61 61 61 55 61 61 Amount of ethylene-based copolymer ① parts by mass 100 100 100 100 50 100 100 Types of vinyl copolymers ② - - - - - Resin 3 - - Melting point of vinyl copolymer ② °C - - - - 55 - - Amount of ethylene-based copolymer ② parts by mass 0 0 0 0 50 0 0 Dosage of organic peroxide parts by mass 0.32 0.2 0.16 0.08 0.64 0.04 The dosage of photoinitiator parts by mass 0.5 The dosage of cross-linking aids parts by mass 0.44 0.3 0.22 0.11 0.85 0.88 0.06 Evaluation results Test piece warpage - ○ 3 mm ◎ 2 mm ◎ 2 mm ◎ 1mm ◎ 1mm × 4 mm ◎ 1mm Exudate - ×

本申請案主張以2020年5月22日提出申請的日本申請特願2020-089610號為基礎的優先權,並將其揭示的全部內容引入至本申請案中。The present application claims priority based on Japanese Patent Application No. 2020-089610 for which it applied on May 22, 2020, and the entire contents of the disclosure are incorporated in the present application.

10:電子零件 10A:電路形成面 10B:電極 10C:與電路形成面為相反側的表面 20:基材層 30:凹凸吸收性樹脂層 40:黏著性樹脂層 50:黏著性積層膜 60:結構體 70:熱硬化性保護膜10: Electronic Parts 10A: circuit forming surface 10B: Electrodes 10C: Surface on the opposite side to the circuit formation surface 20: Substrate layer 30: Concavo-convex absorbent resin layer 40: Adhesive resin layer 50: Adhesive laminated film 60: Structure 70: Thermosetting protective film

圖1是示意性地表示本發明的實施形態的黏著性積層膜的一例的剖面圖。 圖2的(A)、圖2的(B)是示意性地表示本發明的實施形態的電子裝置的製造方法的一例的剖面圖。FIG. 1 is a cross-sectional view schematically showing an example of an adhesive laminated film according to an embodiment of the present invention. FIGS. 2(A) and 2(B) are cross-sectional views schematically showing an example of a method of manufacturing an electronic device according to an embodiment of the present invention.

20:基材層20: Substrate layer

30:凹凸吸收性樹脂層30: Concavo-convex absorbent resin layer

40:黏著性樹脂層40: Adhesive resin layer

50:黏著性積層膜50: Adhesive laminated film

Claims (18)

一種黏著性積層膜,依次包括基材層、凹凸吸收性樹脂層及黏著性樹脂層,用於保護電子零件的電路形成面, 所述凹凸吸收性樹脂層包含熔點為40℃以上、80℃以下的乙烯系共聚物、以及交聯劑, 相對於所述乙烯系共聚物100質量份,所述凹凸吸收性樹脂層中的所述交聯劑的含量為0.06質量份以上、0.60質量份以下。An adhesive laminated film, which sequentially includes a base material layer, a concave-convex absorbing resin layer and an adhesive resin layer, is used for protecting the circuit forming surface of electronic parts, The unevenness-absorbing resin layer contains an ethylene-based copolymer having a melting point of 40°C or higher and 80°C or lower, and a crosslinking agent, Content of the said crosslinking agent in the said uneven|corrugated absorbent resin layer is 0.06 mass part or more and 0.60 mass part or less with respect to 100 mass parts of said ethylene type copolymers. 如請求項1所述的黏著性積層膜,其中 所述乙烯系共聚物包含選自由乙烯-α-烯烴共聚物及乙烯-乙烯基酯共聚物所組成的群組中的至少一種。The adhesive laminated film of claim 1, wherein The ethylene-based copolymer includes at least one selected from the group consisting of an ethylene-α-olefin copolymer and an ethylene-vinyl ester copolymer. 如請求項2所述的黏著性積層膜,其中 所述乙烯-乙烯基酯共聚物包含乙烯-乙酸乙烯基酯共聚物。The adhesive laminated film of claim 2, wherein The ethylene-vinyl ester copolymer comprises ethylene-vinyl acetate copolymer. 如請求項1或請求項2所述的黏著性積層膜,其中 所述交聯劑包含選自由光交聯起始劑及有機過氧化物所組成的群組中的至少一種。The adhesive laminated film of claim 1 or claim 2, wherein The crosslinking agent includes at least one selected from the group consisting of a photocrosslinking initiator and an organic peroxide. 如請求項1或請求項2所述的黏著性積層膜, 其為背面研磨膠帶。The adhesive laminated film according to claim 1 or claim 2, It is a back grinding tape. 如請求項1或請求項2所述的黏著性積層膜,其中 所述凹凸吸收性樹脂層進而包含交聯助劑。The adhesive laminated film of claim 1 or claim 2, wherein The unevenness absorbent resin layer further contains a crosslinking aid. 如請求項6所述的黏著性積層膜,其中 所述交聯助劑包含選自由二乙烯基芳香族化合物、三聚氰酸酯化合物、二烯丙基化合物、丙烯酸酯化合物、三烯丙基化合物、肟化合物及馬來醯亞胺化合物所組成的群組中的一種或兩種以上。The adhesive laminated film of claim 6, wherein The cross-linking assistant is selected from the group consisting of divinyl aromatic compounds, cyanurate compounds, diallyl compounds, acrylate compounds, triallyl compounds, oxime compounds and maleimide compounds one or more of the groups. 如請求項1或請求項2所述的黏著性積層膜,其中 構成所述基材層的樹脂包含選自由聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯及聚醯亞胺所組成的群組中的一種或兩種以上。The adhesive laminated film of claim 1 or claim 2, wherein The resin constituting the base material layer includes one or more selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, and polyimide. 如請求項1或請求項2所述的黏著性積層膜,其中 構成所述基材層的樹脂包含聚萘二甲酸乙二酯。The adhesive laminated film of claim 1 or claim 2, wherein The resin constituting the base material layer contains polyethylene naphthalate. 如請求項1或請求項2所述的黏著性積層膜,其中 所述凹凸吸收性樹脂層的厚度為10 μm以上、1000 μm以下。The adhesive laminated film of claim 1 or claim 2, wherein The thickness of the unevenness-absorbing resin layer is 10 μm or more and 1000 μm or less. 如請求項1或請求項2所述的黏著性積層膜,其中 構成所述黏著性樹脂層的黏著劑包含選自(甲基)丙烯酸系黏著劑、矽酮系黏著劑、胺基甲酸酯系黏著劑、烯烴系黏著劑及苯乙烯系黏著劑中的一種或兩種以上。The adhesive laminated film of claim 1 or claim 2, wherein The adhesive constituting the adhesive resin layer comprises one selected from the group consisting of (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives and styrene adhesives or two or more. 一種電子裝置的製造方法,包括: 準備步驟(A),準備包括電子零件、黏著性積層膜及熱硬化性保護膜的結構體, 所述電子零件具有電路形成面,所述黏著性積層膜貼附於所述電子零件的所述電路形成面側,所述熱硬化性保護膜貼附於所述電子零件的與所述電路形成面為相反側的面;以及 熱硬化步驟(B),藉由對所述結構體進行加熱來使所述熱硬化性保護膜熱硬化, 所述黏著性積層膜是如請求項1至請求項11中任一項所述的黏著性積層膜。A method of manufacturing an electronic device, comprising: In the preparation step (A), a structure including electronic parts, an adhesive laminate film and a thermosetting protective film is prepared, The electronic component has a circuit formation surface, the adhesive laminate film is attached to the circuit formation surface side of the electronic component, and the thermosetting protective film is attached to the circuit formation surface of the electronic component. the face is the face on the opposite side; and The thermosetting step (B) is to thermally harden the thermosetting protective film by heating the structure, The adhesive laminated film is the adhesive laminated film according to any one of Claims 1 to 11. 如請求項12所述的電子裝置的製造方法,其中 所述準備步驟(A)包括: 硬化步驟,於在所述電子零件的所述電路形成面貼附有所述黏著性積層膜的狀態下,使所述黏著性積層膜中的所述凹凸吸收性樹脂層熱硬化或紫外線硬化;以及 在所述電子零件的與所述電路形成面為相反側的面貼附所述熱硬化性保護膜的步驟。The manufacturing method of an electronic device as claimed in claim 12, wherein The preparation step (A) includes: a curing step of thermally curing or ultraviolet curing the unevenness absorbing resin layer in the adhesive laminate film in a state where the adhesive laminate film is attached to the circuit forming surface of the electronic component; as well as The step of attaching the thermosetting protective film to the surface opposite to the circuit formation surface of the electronic component. 如請求項13所述的電子裝置的製造方法,其中 在所述電子零件的與所述電路形成面為相反側的面貼附所述熱硬化性保護膜的步驟中的加熱溫度為50℃以上、90℃以下。The method for manufacturing an electronic device as claimed in claim 13, wherein The heating temperature in the step of attaching the thermosetting protective film to the surface opposite to the circuit formation surface of the electronic component is 50° C. or higher and 90° C. or lower. 如請求項13或請求項14所述的電子裝置的製造方法,其中 所述準備步驟(A)於所述硬化步驟之前包括背面研磨步驟,所述背面研磨步驟是於在所述電子零件的所述電路形成面貼附有所述黏著性積層膜的狀態下,對所述電子零件的與所述電路形成面為相反側的面進行背面研磨。The manufacturing method of an electronic device as claimed in claim 13 or claim 14, wherein The preparation step (A) includes a back grinding step before the hardening step, and the back grinding step is to apply the adhesive laminated film to the circuit formation surface of the electronic component in a state where the adhesive laminate film is attached. The surface on the opposite side to the circuit formation surface of the electronic component is back-polished. 如請求項12或請求項13所述的電子裝置的製造方法,其中 所述熱硬化步驟(B)中的加熱溫度為120℃以上、170℃以下。The method for manufacturing an electronic device according to claim 12 or claim 13, wherein The heating temperature in the thermosetting step (B) is 120° C. or higher and 170° C. or lower. 如請求項12或請求項13所述的電子裝置的製造方法,其中 所述電子零件的所述電路形成面包含凸塊電極。The method for manufacturing an electronic device according to claim 12 or claim 13, wherein The circuit formation surface of the electronic component includes bump electrodes. 如請求項17所述的電子裝置的製造方法,其中 於將所述凸塊電極的高度設為H[μm]且將所述凹凸吸收性樹脂層的厚度設為d[μm]時,H/d為0.01以上、1以下。The method for manufacturing an electronic device as claimed in claim 17, wherein H/d is 0.01 or more and 1 or less, when the height of the bump electrode is H [μm] and the thickness of the unevenness absorbing resin layer is d [μm].
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