TW202142719A - Magnetron plasma film-forming device - Google Patents

Abstract

A magnetron sputtering film-forming device 1 comprises a film-forming roll 10 and a magnet unit 18. The magnet unit 18 comprises a rotary target 17 and the magnet unit 18. The magnet unit 18 comprises a first magnetic pole part 21 and a second magnetic pole part 22 adjacent to each other. The first magnetic pole part has a first region 23, a second region 24, and a second region 24 in the stated order. Each of these regions has a first component and/or a second component obtained by resolution into components by the direction of magnetization. In the first region 23 and the third region 25, the first component is greater than the second component, and the first component and the second component are oriented in opposite directions. In the second region 24, the first component is smaller than the second component.

Description

Magnetron plasma film forming device

The invention relates to a magnetron plasma film forming device.

Heretofore, as a magnetron plasma film forming apparatus, a magnetron sputtering film forming apparatus equipped with a film forming roller and a magnetron plasma unit facing it has been known.

In the magnetron sputtering device, the magnetron plasma unit generates a magnetic field, thereby maintaining the electrons released from the target for a long time and improving the efficiency of sputtering.

For example, there has been proposed a magnetron sputtering film forming apparatus provided with a cylindrical target material and four magnets arranged inside and adjacent to each other (for example, refer to Patent Document 1 below). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2017-150082

[The problem to be solved by the invention]

However, in the magnetron plasma film forming apparatus, a high film forming speed is required.

However, in the structure of Patent Document 1 described above, there is a limit to obtaining a high film forming rate.

The invention provides a magnetron plasma film forming device capable of high-speed film forming. [Technical means to solve the problem]

The present invention (1) includes a magnetron plasma film forming apparatus including: a film forming roller; and a magnetron plasma unit arranged opposite to the film forming roller; and the magnetron plasma unit includes: a rotating target A material, the axis of which extends in the same direction as the axis of the film forming roller; and a magnet unit, which is arranged on the radially inner side of the rotating target; and the magnet unit includes: a first magnetic pole portion; and a second magnetic pole portion, It is adjacent to the first magnetic pole portion in a second direction orthogonal to the first direction along a line segment connecting the axis of the film forming roller and the axis of the rotating target; and the first magnetic pole portion and the first Each of the 2 magnetic pole portions sequentially has a first region, a second region, and a third region in the second direction; the first region, the second region, and the third region each have a magnetization direction in the first At least one of the first component and the second component obtained by decomposing the direction and the second direction; in the first area, the first component is larger than the second component; in the second area, the first The component is larger than the second component; in the third region, the first component is smaller than the second component, and is opposite to the first component in the first region.

Each of the first magnetic pole portion and the second magnetic pole portion of the magnetron plasma device is configured such that the first area mainly follows the first direction, and then the second area mainly faces the third area along the second direction. In the third area, the magnetization direction flows mainly in a substantially U-shape in the first direction opposite to the first direction of the first area. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target of the first magnetic pole portion, and a tunnel-shaped magnetic field is formed on the surface of the rotating target of the second magnetic pole portion, which can be brought into close proximity. That is, the sputtering angle (described later) can be narrowed. As a result, high-speed film formation is possible.

The present invention (2) includes the magnetron plasma film forming apparatus described in (1), wherein the first region and the third region each mainly have the first component, and the second region mainly has the second component.

In this magnetron sputtering film forming apparatus, since the first area and the third area each mainly have the first component, and the second area mainly has the second component, the structure of each of the first magnetic pole portion and the second magnetic pole portion is simple , But can also form high-speed films.

The present invention (3) includes the magnetron plasma film forming apparatus described in (1), wherein the first region is continuous with the second region, and the second region is continuous with the third region, and in the first region, The first component becomes smaller toward the second region, and in the third region, the first component becomes smaller toward the second region.

In this magnetron sputtering film forming apparatus, the first magnetic pole portion and the second magnetic pole portion are each continuous with the first region, the second region, and the third region. Therefore, the surface of the rotating target in the first magnetic pole portion is reliable. A tunnel-shaped magnetic field is formed, and a tunnel-shaped magnetic field is reliably formed on the surface of the rotating target of the second magnetic pole portion. The magnetic fields of the above two tunnel shapes can be made closer. Therefore, the film can be formed at high speed. [Effects of the invention]

The magnetron plasma film forming device of the present invention can form a film at a high speed.

＜One embodiment of magnetron plasma film forming device＞ An embodiment of the magnetron plasma film forming apparatus of the present invention will be described with reference to FIGS. 1 to 4. In addition, in FIG. 3, the magnet unit 18 (described later) is not shaded, and the magnetization direction of the first region 23 to the sixth region 28 (described later) is drawn with arrows.

As shown in FIG. 1, the magnetron sputtering film forming device 1 is a roll-to-roll film forming device in which a substrate 12 is transported on one side and a film 13 is formed (filmed) on the substrate 12 on the other. The magnetron sputtering film forming apparatus 1 includes a conveying section 2 and a film forming section 3.

The transport unit 2 includes a transport box 4, a delivery roller 5, a take-up roller 6, a guide roller 7, and a vacuum pump 8.

The transport box 4 has a substantially box shape that is long in one direction. The transport box 4 contains the delivery roller 5, the take-up roller 6 and the guide roller 7 therein.

Each of the delivery roller 5 and the take-up roller 6 is arranged at one end and the other end in one direction in the conveying box 4.

A plurality of guide rollers 7 are arranged between the delivery roller 5 and the take-up roller 6. The plurality of guide rollers 7 are arranged such that the base material 12 is wound around the film forming roller 10.

The vacuum pump 8 is installed in the transfer box 4.

The film forming section 3 includes a film forming box 9, a film forming roller 10, and a plurality of magnetron plasma units 11.

The film forming box 9 and the conveying box 4 are continuous with the middle part in one direction. The film forming box 9 has a substantially box shape. The film forming box 9 has a plurality of partitions 14. The plurality of partitions 14 extend toward the film forming roll 10 so as to divide the film forming box 9 into a plurality of (3) film forming chambers in the circumferential direction of the film forming roll 10. In addition, a sputtering gas supply machine (not shown) is installed in the film forming box 9. The film forming box 9 houses a film forming roller 10 and a plurality of magnetron plasma units 11.

The axis of the film forming roller 10 is orthogonal to one direction of the transport box 4.

Each of the plurality of magnetron plasma units 11 is arranged in each of the plurality of film forming chambers, and is arranged opposite to the radially outer side of the film forming roller 10. The plurality of magnetron plasma units 11 are arranged at intervals in the circumferential direction of the film forming roller 10.

The magnetron plasma cells 11 adjacent to each other in the circumferential direction are separated by partitions 14. Each of the plurality of magnetron plasma units 11 includes a plasma box 20, a first unit 15, and a second unit 16.

As shown in FIG. 2, the plasma box 20 has a substantially box shape with one side opening toward the film forming roller 10. The plasma box 20 extends along the axis of the film forming roller 10. The plasma box 20 accommodates the first unit 15 and the second unit 16. The first unit 15 and the second unit 16 are arranged adjacent to each other with an interval in the circumferential direction of the film forming roll 10. The first unit 15 and the second unit 16 pass through the opening of the plasma box 20 and face the film forming roller 10.

The first unit 15 and the second unit 16 have the same configuration except for the rotation direction of the rotating target 17 (described later). Therefore, the first unit 15 will be described in detail, and the second unit 16 will be briefly described.

As shown in FIG. 3, the first unit 15 includes a rotating target 17 and a magnet unit 18.

The rotating target 17 has a cylindrical shape and has an axis parallel to the axis of the film forming roller 10 (the center of the cross-section). The rotating target 17 can be rotated (circumferentially movable) in the opposite direction to the rotation direction of the film forming roller 10, for example. The rotating target 17 is electrically connected to a cathode source (not shown), thereby functioning as a cathode. In addition, a target material is laminated on the outer peripheral surface of the rotating target 17, that is, the rotating target 17 has a material for forming the film 13 on the outer peripheral surface. Examples of materials include metals containing at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W Oxide. Specifically, for example, indium tin composite oxide (ITO), indium gallium zinc composite oxide (IGZO), indium gallium composite oxide (IGO), antimony tin composite oxide (ATO), and the like are cited.

The magnet unit 18 is housed on the radially inner side of the rotating target 17. The magnet unit 18 includes a yoke 19, a first magnetic pole portion 21, and a second magnetic pole portion 22.

The yoke 19 has a narrow plate shape extending in the axial direction of the film forming roller 10. The yoke 19 also has at least a surface facing the film forming roller 10 (a surface in the first direction, a first main surface). Examples of the material of the yoke 19 include metals such as iron and stainless steel.

Each of the first magnetic pole portion 21 and the second magnetic pole portion 22 has a quadrangular prism shape extending in the axial direction of the film forming roller 10. The first magnetic pole portion 21 and the second magnetic pole portion 22 are fixed to the surface of the yoke 19. The first magnetic pole portion 21 and the second magnetic pole portion 22 are arranged adjacent to each other in the second direction.

The second magnetic pole portion 22 is located on the second direction side of the first magnetic pole portion 21. Specifically, one side surface of the first magnetic pole portion 21 in the second direction and the other side surface of the second magnetic pole portion 22 in the second direction are in contact with each other.

The first magnetic pole portion 21 is a cross-sectional view (a cross-sectional view along the first direction and a second direction orthogonal to the first direction, the first direction is along the axis connecting the film forming roller 10 and the rotating target The line segment of the axis of 17. Hereinafter, the cross-sectional view follows this definition), and on the side facing the second direction (the side adjacent to the second magnetic pole portion 22) there are sequentially a first area 23, a second area 24, and a second area 3 area 25. Each of the first area 23, the second area 24, and the third area 25 exists in the first direction. The first area 23, the second area 24, and the third area 25 are divided areas in which the first magnetic pole portion 21 is divided into three (for example, divided into three equal parts) in the second direction. The first area 23, the second area 24, and the third area 25 each have a specific magnetization direction. The magnetization direction is from the S pole to the N pole (direction), shown in Figure 3 with a thick arrow.

The first region 23, the second region 24, and the third region 25 have at least one of a first component and a second component obtained by decomposing the magnetization direction in the first direction and the second direction. In the present embodiment, the first area 23 and the third area 25 mainly have the first component, and the second area 24 mainly has the second component.

The magnetization direction of the first region 23 faces the other side of the first direction. That is, the magnetization direction of the first region 23 is directed to the opposite side of the film forming roller 10. The components obtained by decomposing the magnetization direction of the first region 23 in the first direction and the second direction (hereinafter referred to as decomposed components) are mainly the first component, and there is almost no second component. However, a small amount of the second component is allowed to exist in the first region 23. The first component of the first region 23 faces the other side in the first direction.

The magnetization direction of the second region 24 faces the second direction side. That is, the magnetization direction of the second region 24 faces the third region 25. The decomposition component of the magnetization direction of the second region 24 is mainly the second component, and there is almost no first component. However, a small amount of the first component is allowed to exist in the second region 24. The second component of the second region 24 faces the second direction side.

The magnetization direction of the third region 25 faces the first direction side. That is, the magnetization direction of the first region 23 faces the film forming roller 10. The decomposition component of the magnetization direction of the third region 25 is mainly the first component, and there is almost no second component. However, a small amount of the second component is allowed to exist in the third region 25. The first component of the third region 25 is opposite to the first component of the first region 23, and specifically, faces the first direction side.

Since the first magnetic pole portion 21 has the first area 23, the second area 24, and the third area 25 containing the above-mentioned decomposed components, the first magnetic pole portion 21 is configured such that the first area 23 mainly extends along the first direction. Next, in the second region 24, the magnetization direction of the substantially U-shaped flow is mainly along the side in the second direction toward the third region 25, and in the third region 25, the magnetization direction is mainly along the substantially U-shaped flow on the side in the first direction. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 facing the first magnetic pole portion 21. The magnetic field approaches the film forming roller 10 from the surface corresponding to the third region 25 first, and then faces the parabolic shape of the surface corresponding to the first region 23.

The size of the first magnetic pole portion 21 is set so that the maximum value of the absolute value of the magnetic flux density corresponding to the first magnetic pole portion 21 is in a specific range (described later). Specifically, the length in the second direction is relative to the first The ratio of the length in the direction is, for example, 0.3 or more, preferably 0.5 or more, and more preferably 0.7 or more.

The ratio of the length in the second direction of the first region 23 to the length in the second direction of the first magnetic pole portion 21 is, for example, 0.2 or more, and for example, 0.4 or less. The ratio of the length in the second direction of the second region 24 to the length in the second direction of the first magnetic pole portion 21 is the same as described above. The ratio of the length in the second direction of the third region 25 to the length in the second direction of the first magnetic pole portion 21 is the same as described above.

Furthermore, the length in the first direction of the first magnetic pole portion 21 is, for example, 5 mm or more, preferably 10 mm or more, for example, 100 mm or less, and preferably 50 mm or less. The length in the second direction of the first magnetic pole portion 21 is, for example, 5 mm or more, preferably 10 mm or more, for example, 100 mm or less, and preferably 50 mm or less. The length in the second direction of each of the first region 23, the second region 24, and the third region 25 is, for example, 1 mm or more, preferably 3 mm or more, for example, 50 mm or less, and preferably 15 mm or less.

The second magnetic pole portion 22 has a fourth area 26 as an example of the first area, a fifth area 27 as an example of the second area, and a sixth area as an example of the third area in this order toward the other side in the second direction 28. Therefore, the fourth area 26, the fifth area 27, and the sixth area 28 are sequentially arranged toward the other side in the second direction (the side adjacent to the first magnetic pole portion 21). Each of the fourth area 26, the fifth area 27, and the sixth area 28 exists in the second magnetic pole portion 22 in the first direction, but is divided into three (for example, divided into three equal parts) in the second direction area. Each of the fourth area 26, the fifth area 27, and the sixth area 28 has a boundary line between the first magnetic pole portion 21 and the second magnetic pole portion 22 as a reference, and has a relationship with the first area 23, the second area 24, and the third area. Each area 25 has a line-symmetrical magnetization direction.

The fourth region 26, the fifth region 27, and the sixth region 28 have at least one of a first component and a second component that are decomposed components in the magnetization direction. In this embodiment, the fourth area 26 and the sixth area 28 mainly have the first component, and the fifth area 27 mainly has the second component.

The magnetization direction of the fourth region 26 faces the other side of the first direction. That is, the magnetization direction of the first region 23 faces the opposite side of the film forming roller 10. That is, the magnetization direction of the fourth region 26 is the same as the magnetization direction of the first region 23. The decomposition component of the magnetization direction of the fourth region 26 is mainly the first component, and there is almost no second component. However, a small amount of the second component is allowed to exist in the fourth region 26. The first component of the fourth region 26 and the first component of the first region 23 are in the same direction, and face the other side of the first direction.

The magnetization direction of the fifth area 27 faces the other side of the second direction. That is, the magnetization direction of the fifth area 27 faces the sixth area 28. Thereby, the magnetization direction of the fifth area 27 is opposite to the magnetization direction of the second area 24. The decomposition component of the magnetization direction of the fifth region 27 is mainly the second component, and there is almost no first component. However, a small amount of the first component is allowed in the fifth region 27. The second component of the fifth area 27 and the second component of the second area 24 are opposite to each other, and face the other side in the second direction.

The magnetization direction of the sixth region 28 faces the first direction side. That is, the magnetization direction of the sixth region 28 faces the film forming roller 10. The magnetization direction of the sixth region 28 is the same as the magnetization direction of the third region 25. The decomposition component of the magnetization direction of the sixth region 28 is mainly the first component, and there is almost no second component. However, a small amount of the second component is allowed to exist in the sixth region 28. The first component of the sixth region 28 and the first component of the third region 25 are in the same direction, and face the first direction side.

Since the second magnetic pole portion 22 has the fourth region 26, the fifth region 27, and the sixth region 28 containing the above-mentioned decomposed components, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 facing the second magnetic pole portion 22 . The magnetic field approaches the film forming roll 10 from the surface corresponding to the sixth region 28 first, and then faces the parabolic shape of the surface corresponding to the fourth region 26.

The size of the second magnetic pole portion 22 is the same as the size of the first magnetic pole portion 21.

Examples of materials for the first magnetic pole portion 21 and the second magnetic pole portion 22 include permanent magnets such as neodymium magnets.

As shown in FIG. 2, the second unit 16 includes a rotating target 17 that can rotate in the same direction as the rotation direction of the film forming roller 10, and the above-mentioned magnet unit 18.

Furthermore, in this embodiment, the sputtering angle θ obtained below can be narrowed.

The tangential direction component of the magnetic flux density is measured on the outer peripheral surface of the rotating target 17 facing one of the circumferential directions of the rotating target. Calculate the sputtering angle θ formed by the line segment LS1 and the line segment LS2. The line segment LS1 is connected to the point MAX_P corresponding to the tangential component of the maximum magnetic flux density and the center of the rotating target 17, and the line segment LS2 is connected to the minimum The point MIN_P of the tangential component of the magnetic flux density and the center of the rotating target 17. The sputtering angle θ is obtained by, for example, using commercially available software to simulate the magnetic field.

Here, the tangential component of the magnetic flux density obtained by the above simulation is explained.

As shown in FIG. 3, in the first magnetic pole portion 21, since the magnetization direction of the first area 23 faces the other side of the first direction, the magnetization direction of the second area 24 faces the second direction side, and the magnetization direction of the third area 25 It faces the first direction side, so if the tangential direction component of the magnetic flux density is measured from the surface of the rotating target 17 corresponding to the first area 23 to the surface of the rotating target 17 corresponding to the third area 25, as shown in the figure As shown in 4, the minimum magnetic flux density MIN_P (that is, the strongest value of the magnetic field on the negative side) can be obtained.

As shown in FIG. 3, in the second magnetic pole portion 22, since the magnetization direction of the fourth area 26 faces the other side of the first direction, the magnetization direction of the fifth area 27 faces the other side of the second direction, and the magnetization of the sixth area 28 The direction is toward the first direction side, so if the tangential direction component of the magnetic flux density is measured from the surface of the rotating target 17 corresponding to the sixth area 28 to the surface of the rotating target 17 corresponding to the fourth area 26, then As shown in Figure 4, the maximum magnetic flux density MAX_P (that is, the strongest value of the magnetic field on the positive side) is obtained.

Therefore, if the tangential component of the magnetic flux density is measured in the circumferential direction of the rotating target 17 and in a direction from the first area 23 to the fourth area 26, as shown in FIG. 4, the magnetic field is usually observed sequentially. The minimum MIN_P and maximum MAX_P of the flux density.

The second unit 16 is also the same as the first unit 15.

In addition, the absolute value of the minimum magnetic flux density MIN_P is similar to the maximum magnetic flux density MAX_P, for example, and is specifically the same.

The sputtering angle θ is, for example, 40 degrees or less, preferably 35 degrees or less, more preferably 30 degrees or less, and still more preferably 25 degrees or less. As long as the sputtering angle θ is below the above upper limit, the distance between the plasma corresponding to the minimum magnetic flux density MIN_P and the plasma corresponding to the maximum magnetic flux density MAX_P in the radial direction outside of the rotating target 17 becomes closer. Therefore, the region where the density of electrons released from the rotating target 17 is relatively high can be concentrated. Therefore, the film can be formed at high speed.

On the other hand, the sputtering angle θ is, for example, 5 degrees or more.

The film formation speed can be obtained by simulating a thin fluid using commercially available software. The film formation speed is also called the dynamic rate.

The maximum value of the absolute value of the magnetic flux density is, for example, 40 mT or more, preferably 80 mT or more, more preferably 120 mT or more, and for example, 10,000 mT or less. As long as the maximum absolute value of the magnetic flux density is more than the above lower limit, the plasma can be maintained stably.

Next, a method of forming the film 13 on the substrate 12 using the magnetron sputtering film forming apparatus 1 will be described.

First, the magnetron sputtering film forming apparatus 1 shown in FIG. 1 is prepared.

Next, the long substrate 12 is installed in the magnetron sputtering film forming apparatus 1. The substrate 12 is not particularly limited, and examples thereof include a polymer film, a glass film (thin film glass), and the like. Examples of polymer films include polyester films (polyethylene terephthalate (PET: Polyethylene Terephthalate) film, polybutylene terephthalate film, polyethylene naphthalate film, etc.), poly Carbonate-based film, olefin-based film (polyethylene film, polypropylene film, cycloolefin film, etc.), acrylic film, polyether-based film, polyarylate-based film, melamine-based film, polyamide-based film, polyamide Imide-based films, cellulose-based films, and polystyrene-based films.

In order to install the substrate 12 in the magnetron sputtering film forming apparatus 1, as shown in FIG. One end of the direction is wound around the film forming roll 10 and wound up by the winding roll 6 on one side.

Next, the vacuum pump 8 is driven to vacuum the inside of the transfer box 4 and the film forming box 9. At the same time, the sputtering gas is supplied into the film forming box 9 from a sputtering gas supply machine (not shown). As the sputtering gas, for example, an inert gas such as argon gas, and for example, a reactive gas further containing oxygen gas, and the like are mentioned.

Next, while continuously conveying the base material 12 from the delivery roller 5 to the winding roller 6, the cathode voltage is applied to the rotating target 17. Thereby, the self-rotating target 17 releases electrons.

Therefore, each of the first unit 15 and the second unit 16 holds the above-mentioned electrons for a long time.

Therefore, atoms (specifically, argon atoms) derived from the sputtering gas efficiently collide with the rotating target 17 so that the particles of the material are attached to the outer peripheral surface of the film forming roller 10 by rotating the target 17 The substrate 12. Thereby, by sputtering, as shown in FIG. 1, the film 13 is formed on the base 12.

<Function and effect of one embodiment> In addition, the first magnetic pole portion 21 of the magnetron sputtering film forming apparatus 1 is configured to be on the other side mainly along the first direction in the first region 23, and then on the side mainly along the second direction in the second region 24 On the other hand, toward the third region 25, the magnetization direction of the substantially U-shaped flow on the side of the first direction in the third region 25 is mainly along. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 of the first magnetic pole portion 21.

In addition, the second magnetic pole portion 22 of the magnetron sputtering film forming apparatus 1 is configured to be on the other side mainly in the first direction in the fourth region 26, and then on the other side in the fifth region 27 mainly in the second direction On the other hand, toward the sixth area 28, the magnetization direction of the substantially U-shaped flow on the side of the first direction in the sixth area 28 is mainly along. Therefore, a tunnel-shaped magnetic field is formed on the surface of the rotating target 17 of the second magnetic pole portion 22.

The tunnel-shaped magnetic field formed on the surface of the rotating target 17 of the first magnetic pole portion 21 and the tunnel-shaped magnetic field formed on the surface of the rotating target 17 of the second magnetic pole portion 22 are close to each other. That is, the sputtering angle θ can be narrowed. As a result, the area where the density of electrons released from the rotating target 17 of the first unit 15 is high and the area where the density of electrons released from the rotation target 17 of the second unit 16 is high can be concentrated.

Therefore, according to the magnetron sputtering film forming apparatus 1, the film 13 can be formed at a high speed.

Moreover, in this embodiment, each of the first region 23 and the third region 25 mainly has the first component, and the second region 24 mainly has the second component. The fourth area 26 and the sixth area 28 each mainly have the first component, and the fifth area 27 mainly has the second component. Therefore, although the structure of each of the first magnetic pole portion 21 and the second magnetic pole portion 22 is simple, the film can be formed at a high speed.

＜Examples of changes＞ In the following modification examples, the same reference numerals are attached to the same members and steps as those of the above-mentioned embodiment, and detailed descriptions thereof are omitted. In addition, each modified example can exhibit the same functions and effects as the first embodiment, except for special descriptions. Furthermore, an embodiment and its modification examples can be appropriately combined.

In one embodiment, the first magnetic pole portion 21 and the second magnetic pole portion 22 are constituted by different members, but they may also be integrally constituted by one member.

In addition, in the first magnetic pole portion 21, the first area 23, the second area 24, and the third area 25 may be composed of three independent members, or, for example, a member such as a magnet of different polarity may be used, consisting of one member Integral structure. In the second magnetic pole portion 22, the fourth area 26, the fifth area 27, and the sixth area 28 may be composed of three independent members, or, for example, a member such as a magnet of different polarity may be used, which is composed of a single member. .

In one embodiment, although the first magnetic pole portion 21 has three regions (the first region 23, the second region 24, and the third region 25), the number of regions is not particularly limited, and it may be 4 or more. Furthermore, in one embodiment, although the second magnetic pole portion 22 has three regions (a fourth region 26, a fifth region 27, and a sixth region 28), the number of regions is not particularly limited, and it may be 4 or more. .

FIG. 5 shows a modification example in which the first magnetic pole portion 21 has 5 regions, and the second magnetic pole portion 22 has 5 regions. In FIG. 5, the first magnetic pole portion 21 has a first main area 31, a first auxiliary area 32, a second area 24, a third auxiliary area 33, and a third main area 34 in this order toward the second direction side. The first main area 31 and the first auxiliary area 32 of this modified example correspond to the first area 23 of an embodiment. The third auxiliary area 33 and the third main area 34 of the modified example correspond to the third area 25 of one embodiment.

The decomposed component of the magnetization direction of the first main region 31 is the first component. The first component faces the other side in the first direction.

The decomposed components of the magnetization direction of the first auxiliary region 32 are the first component and the second component. The first component faces the other side in the first direction. The second component faces the second direction side. The length in the second direction of the first auxiliary region 32 is, for example, similar to the length in the second direction of the first main region 31, and is specifically the same. Therefore, in the first region 23 including the first main region 31 and the first auxiliary region 32, the first component is larger than the second component.

The decomposition component of the third main region 34 is the first component. The first component faces the first direction side.

The decomposition components of the magnetization direction of the third auxiliary region 33 are the first component and the second component. The first component faces the first direction side. The second component faces the second direction side. The length in the second direction of the third auxiliary region 33 is similar to the length in the second direction of the third main region 34, for example, and is specifically the same. Therefore, in the third region 25 including the third main region 34 and the third auxiliary region 33, the first component is larger than the second component.

The second magnetic pole portion 22 has a fourth main area 35, a fourth auxiliary area 36, a fifth area 27, a sixth auxiliary area 37, and a sixth main area 38 in this order toward the other side in the second direction. The fourth main area 35 and the fourth auxiliary area 36 of this modified example correspond to the fourth area 26 of one embodiment. The sixth auxiliary area 37 and the sixth main area 38 of the modified example correspond to the sixth area 28 of one embodiment.

The decomposed component of the magnetization direction of the fourth main region 35 is the first component. The first component faces the other side in the first direction.

The decomposed components of the magnetization direction of the fourth auxiliary region 36 are the first component and the second component. The first component faces the other side in the first direction. The second component faces the other side in the second direction. The length in the second direction of the fourth auxiliary region 36 is similar to the length in the second direction of the fourth main region 35, for example, and is specifically the same. Therefore, in the fourth region 26 including the fourth main region 35 and the fourth auxiliary region 36, the first component is larger than the second component.

The decomposition component of the sixth main region 38 is the first component. The first component faces the first direction side.

The decomposition components of the magnetization direction of the sixth auxiliary region 37 are the first component and the second component. The first component faces the first direction side. The second component faces the other side in the second direction. The second direction length of the sixth auxiliary region 37 is similar to, for example, the second direction length of the sixth main region 38, and is specifically the same. Therefore, in the sixth region 28 including the sixth main region 38 and the sixth auxiliary region 37, the first component is larger than the second component.

As long as the above-mentioned tunnel-shaped magnetic field is formed on the surface of the rotating target 17, the orientation of the magnetization directions of the first magnetic pole portion 21 and the second magnetic pole portion 22 is not limited. The magnetization directions of the first area 23, the second area 24, the third area 25, the fourth area 26, the fifth area 27, and the sixth area 28 of one embodiment may be reversed. Specifically, as shown in FIG. 6, the magnetization directions of the first region 23 and the fourth region 26 face the first direction side. The magnetization direction of the second region 24 faces the other side of the second direction. The magnetization direction of the fifth region 27 faces the second direction side. The magnetization directions of the third region 25 and the sixth region 28 face the other side of the first direction. In the modified example shown in FIG. 6, the tunnel-shaped magnetic field formed on the surface of the rotating target 17 opposed to the first magnetic pole portion 21 first approaches the film forming roller 10 from the surface corresponding to the first region 23 first, and then Orientation corresponds to the parabolic shape of the surface of the third region 25. The tunnel-shaped magnetic field formed on the surface of the rotating target 17 facing the second magnetic pole portion 22 approaches the film forming roller 10 from the surface corresponding to the fourth area 26, and then toward the surface corresponding to the sixth area 28 The parabolic shape.

In the modified example shown in FIG. 7, in the first magnetic pole portion 21, the first region 23 and the second region 24 are continuous, and the second region 24 and the third region 25 are continuous.

In the first region 23, the first component becomes smaller toward the second region 24. That is, as the magnetization direction of the first region 23 approaches the second region 24, the inclination with respect to the first direction gradually (continuously) becomes stronger. The first component of the first region 23 faces the other side in the first direction.

In addition, in the third area 25, the first component becomes smaller as it goes to the second area 24. That is, as the magnetization direction of the third region 25 approaches the second region 24, the inclination with respect to the first direction gradually (continuously) becomes stronger. The first component of the third region 25 faces one side in the first direction.

In the second region 24, in the region close to one end of the first region 23, the first component faces the other side in the first direction and is minute, and in the other end region close to the third region 25, the first component faces the first One side is small in the 1 direction, and in the middle area between these, there is substantially no first component as a decomposing component, and only the second component.

The magnetization direction of the first magnetic pole portion 21 is configured as a substantially parabolic line approaching the first direction side of the second region 24 from one side of the first region 23 in the first direction, and then reaching the first direction side of the third region 25.

In the second magnetic pole portion 22, the fourth area 26 and the fifth area 27 are continuous, and the fifth area 27 and the sixth area 28 are continuous.

In the fourth area 26, the first component becomes smaller as it goes to the fifth area 27. That is, as the magnetization direction of the fourth region 26 approaches the fifth region 27, the inclination with respect to the first direction gradually (continuously) becomes stronger. The first component of the fourth region 26 faces the other side in the first direction.

In addition, in the sixth area 28, the first component becomes smaller as it goes to the fifth area 27. That is, as the magnetization direction of the sixth region 28 approaches the fifth region 27, the inclination with respect to the first direction gradually (continuously) becomes stronger. The first component of the sixth region 28 faces the first direction side.

In the fifth area 27, it is close to one end area of the fourth area 26, the first component faces the other side in the first direction and is minute, and in the fifth area 27, it is close to the other end area of the sixth area 28, the first The component faces the first direction side and is minute, and in the middle area between the two, as a decomposing component, there is substantially no first component and only the second component.

Therefore, the magnetization direction of the second magnetic pole portion 22 is formed as a substantially parabolic line approaching the first direction side of the fourth region 26 from the first direction side of the fifth region 27 and then reaching the first direction side of the sixth region 28 .

In the magnetron sputtering film forming apparatus 1 shown in FIG. 7, in the first magnetic pole portion 21, since the first region 23, the second region 24, and the third region 25 are continuous, a parabolic magnetization direction is formed. Therefore, a tunnel-shaped magnetic field is reliably formed on the surface of the rotating target 17 corresponding to the first magnetic pole portion 21.

Since the fourth area 26, the fifth area, and the sixth area 28 are continuous in the second magnetic pole portion 22, a parabolic magnetization direction is formed. Therefore, a tunnel-shaped magnetic field is surely formed on the surface of the rotating target 17 corresponding to the second magnetic pole portion 22.

The above-mentioned two tunnel-shaped magnetic fields can be made closer, and the density of electrons released from the rotating target 17 of the first unit 15 can be higher than that of the electrons released from the rotating target 17 of the second unit 16. The thicker areas are more concentrated. Therefore, the film can be formed at high speed.

FIG. 8 is a modification example in which the length in the second direction of each of the first magnetic pole portion 21 and the second magnetic pole portion 22 shown in FIG. 7 is too short.

In this modified example, the first magnetic pole portion 21 has the first region 23, the second region 24, and the third region 25 described above. The second magnetic pole portion 22 has the fourth area 26, the fifth area 27, and the sixth area 28 described above. [Example]

Examples and comparative examples are shown below to explain the present invention more specifically. In addition, the present invention is not limited to any Examples and Comparative Examples. In addition, specific numerical values such as the blending ratio (content ratio), physical property values, and parameters used in the following description can be replaced with the corresponding blending ratio (content ratio), as described in the above-mentioned "Forms for Carrying Out the Invention", Physical property values, parameters, etc. record the upper limit (as the value defined as "below" or "not reached") or lower limit (as the value defined as "above" or "exceeding").

Example 1 The magnetron sputtering film forming apparatus 1 described in one of the embodiments shown in FIGS. 1 to 3 is simulated. The dimensions of the first magnetic pole portion 21 and the second magnetic pole portion 22 are as described in Table 1.

Example 2 Except that the magnetization directions of the first region 23 to the sixth region 28 were inverted, in the same manner as in Example 1, the magnetron sputtering film forming apparatus 1 described in FIG. 6 was simulated.

Example 3 As shown in FIG. 7, the magnetization direction of the first magnetic pole portion 21 forms a parabola, so that the first region 23 and the second region 24 are continuous, and the second region 24 and the third region 25 are continuous, and the second magnetic pole The magnetization direction of the portion 22 forms a parabola, and the fourth area 26 and the fifth area 27 are continuous, and the fifth area 27 and the sixth area 28 are continuous. The magnetron sputtering film forming apparatus 1 is simulated.

Example 4 Except that the length in the second direction of each of the first magnetic pole portion 21 and the second magnetic pole portion 22 was changed from 20 mm to 8 mm, the same as in Example 3, the magnetron sputtering film forming apparatus 1 shown in FIG. 8 Perform simulations.

Comparative example 1 Except that the first magnetic pole portion 21 does not have the first area 23, and the second magnetic pole portion 22 does not have the fourth area 26, and the dimensions are changed to be as shown in Table 2, the same as in Example 1, the comparison to FIG. 9 The magnetron sputtering film forming apparatus 1 shown is simulated.

＜Evaluation＞ For the magnetron sputtering film forming device 1, the following items are evaluated. These results are shown in Table 3.

(1) Sputtering angle θ, maximum and minimum magnetic flux density For the magnetron sputtering film forming apparatus 1 of each of Examples 1 to 4 and Comparative Example 1, the maximum and minimum values of sputtering angle θ and magnetic flux density were obtained by simulating the magnetic field using the finite element method using the following software .

Software name: JMAG (manufactured by JSOL) Calculation method: finite element method

(2) Film forming speed The film forming speed of the magnetron sputtering film forming apparatus 1 of each of Examples 1 to 3 and Comparative Example 1 was obtained by using the simulated thin fluid of the following software. The film formation rate of Examples 1 to 3 was determined as the ratio when the film formation rate of Comparative Example 1 was set to 100.

Software name: DSMC-Neutrals (manufactured by Wavefront) Calculation method: Direct Simulation Monte Carlo (DSMC: Direct Simulation Monte Carlo) method

[Table 1]

[Table 2]

[table 3]

In addition, the above-mentioned invention is provided as an exemplary embodiment of this invention, but this is only an illustration, and is not interpreted restrictively. Variations of the present invention that are understood by those in this technical field are included in the scope of patent applications described later.

[Industrial availability]

The magnetron sputtering film forming device can be used to form the film.

1: Magnetron sputtering film forming device 2: Conveying department 3: Film forming part 4: Transport box 5: Delivery roller 6: take-up roller 7: Guide roller 8: Vacuum pump 9: Film forming box 10: Film forming roller 11: Magnetron plasma unit 12: Substrate 13: Membrane 14: Partition 15: Unit 1 16: Unit 2 17: Rotating target 18: Magnet unit 19: Magnetic yoke 20: Plasma box 21: 1st magnetic pole part 22: 2nd magnetic pole part 23: Zone 1 24: Zone 2 25: Zone 3 26: Zone 4 27: Zone 5 28: Zone 6 31: 1st main area 32: 1st auxiliary area 33: 3rd auxiliary area 34: 3rd main area 35: 4th main area 36: 4th auxiliary area 37: 6th auxiliary area 38: 6th main area LS1: Line segment LS2: Line segment MAX_P: point MIN_P: point θ: Sputtering angle

Fig. 1 is a cross-sectional view of a magnetron sputtering film forming apparatus which is an embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view of a magnetron plasma unit included in the magnetron sputtering film forming apparatus of FIG. 1. FIG. Fig. 3 is an enlarged view of the magnet unit shown in Fig. 2. Figure 4 is a graph showing the relationship between the tangential direction component of the magnetic flux density and the sputtering angle θ. Fig. 5 is a modification example of the magnet unit shown in Fig. 3, that is, a modification example in which the magnetic pole portion has 5 regions. FIG. 6 is a modification example of the magnet unit shown in FIG. 3, that is, a modification example where the magnetization direction of the magnetic pole part is opposite to that of FIG. 3. Fig. 7 is a modification example of the magnet unit shown in Fig. 3, that is, a modification example in which two adjacent regions are continuous. Fig. 8 is a modification example of the magnetic pole portion shown in Fig. 7, that is, a modification example of a shorter length in the second direction. Fig. 9 is an enlarged view of the magnet unit of the comparative example.

10: Film forming roller

15: Unit 1

17: Rotating target

18: Magnet unit

19: Magnetic yoke

21: 1st magnetic pole part

22: 2nd magnetic pole part

23: Zone 1

24: Zone 2

25: Zone 3

26: Zone 4

27: Zone 5

28: Zone 6

LS1: Line segment

LS2: Line segment

MAX_P: point

MIN_P: point

θ: Sputtering angle

Claims (3)

A magnetron plasma film forming device, which is characterized in that it comprises: Film forming roller; and A magnetron plasma unit, which is arranged opposite to the above-mentioned film forming roller; and The above-mentioned magnetron plasma unit includes: The axis of the rotating target material extends in the same direction as the axis of the film forming roller; and The magnet unit is arranged on the radially inner side of the rotating target; and The above-mentioned magnet unit includes: 1st magnetic pole part; and The second magnetic pole portion is adjacent to the first magnetic pole portion in a second direction orthogonal to the first direction along a line segment connecting the axis of the film forming roller and the axis of the rotating target; and Each of the first magnetic pole portion and the second magnetic pole portion sequentially has a first area, a second area, and a third area in the second direction; The first region, the second region, and the third region each have at least one of a first component and a second component obtained by decomposing the magnetization direction in the first direction and the second direction; In the first region, the first component is larger than the second component; In the second region, the first component is smaller than the second component; and In the third region, the first component is larger than the second component and is opposite to the first component in the first region. The magnetron plasma film forming apparatus of claim 1, wherein the first region and the third region each mainly have the first component, The second region mainly has the second component. Such as the magnetron plasma film forming apparatus of claim 1, wherein the first area is continuous with the second area, The second area is continuous with the third area, In the first area, the first component becomes smaller toward the second area, In the third area, the first component becomes smaller as it goes to the second area.

Images