TW202141905A - Power supply device for eliminating ringing effect - Google Patents

Power supply device for eliminating ringing effect Download PDF

Info

Publication number
TW202141905A
TW202141905A TW109113276A TW109113276A TW202141905A TW 202141905 A TW202141905 A TW 202141905A TW 109113276 A TW109113276 A TW 109113276A TW 109113276 A TW109113276 A TW 109113276A TW 202141905 A TW202141905 A TW 202141905A
Authority
TW
Taiwan
Prior art keywords
potential
coupled
node
terminal
power supply
Prior art date
Application number
TW109113276A
Other languages
Chinese (zh)
Other versions
TWI715487B (en
Inventor
詹子增
Original Assignee
宏碁股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 宏碁股份有限公司 filed Critical 宏碁股份有限公司
Priority to TW109113276A priority Critical patent/TWI715487B/en
Application granted granted Critical
Publication of TWI715487B publication Critical patent/TWI715487B/en
Publication of TW202141905A publication Critical patent/TW202141905A/en

Links

Images

Abstract

A power supply device for eliminating the ringing effect includes an input stage circuit, a transformer, an output stage circuit, a power switch element, a PWM (Pulse Width Modulation) IC (Integrated Circuit), and a control circuit. The transformer includes a main coil, a secondary coil, and a magnetizing inductor. The power switch element selectively couples the main coil and the magnetizing inductor to a ground voltage according to a PWM voltage. A parasitic capacitor is built in the power switch element. The PWM IC generates the PWM voltage. The control circuit monitors a resonant voltage between the magnetizing inductor and the parasitic capacitor. If the resonant voltage is lower than a threshold voltage, the control circuit will force the power switch element to be turned on. The threshold voltage is determined according to a reference voltage of the input stage circuit.

Description

消除振鈴效應之電源供應器Power supply to eliminate ringing effect

本發明係關於一種電源供應器,特別係關於一種可消除振鈴效應之電源供應器。The present invention relates to a power supply, and more particularly to a power supply that can eliminate the ringing effect.

在傳統電源供應器中,功率切換器之非理想寄生電容往往會產生振鈴效應,其不僅造成較大之切換損失,更導致電源供應器之整體轉換效率下降。有鑑於此,勢必要提出一種全新之解決方案,以克服先前技術所面臨之困境。In the traditional power supply, the non-ideal parasitic capacitance of the power switch often produces a ringing effect, which not only causes a large switching loss, but also causes the overall conversion efficiency of the power supply to decrease. In view of this, it is necessary to propose a new solution to overcome the difficulties faced by the previous technology.

在較佳實施例中,本發明提出一種消除振鈴效應之電源供應器,包括:一輸入級電路,根據該輸入電位來產生一參考電位;一變壓器,包括一主線圈、一副線圈,以及一激磁電感器,其中該主線圈係用於接收該輸入電位,而該副線圈係用於產生一感應電位;一輸出級電路,根據該感應電位來產生一輸出電位;一功率切換器,根據一脈衝寬度調變電位來選擇性地將該主線圈和該激磁電感器皆耦接至一接地電位,其中該功率切換器內建一寄生電容器;一脈衝寬度調變積體電路,產生該脈衝寬度調變電位;以及一控制電路,監控該激磁電感器和該寄生電容器之間之一諧振電位,其中若該諧振電位低於一臨界電位,則該控制電路將強制導通該功率切換器;其中該臨界電位係根據該參考電位而決定。In a preferred embodiment, the present invention provides a power supply that eliminates the ringing effect, including: an input stage circuit, which generates a reference potential according to the input potential; a transformer, including a main coil, a secondary coil, and a Excitation inductor, where the main coil is used to receive the input potential, and the auxiliary coil is used to generate an induced potential; an output stage circuit generates an output potential according to the induced potential; a power switch, according to a Pulse width modulation potential is used to selectively couple the main coil and the magnetizing inductor to a ground potential, wherein the power switch has a built-in parasitic capacitor; a pulse width modulation integrated circuit generates the pulse Width modulation potential; and a control circuit that monitors a resonance potential between the magnetizing inductor and the parasitic capacitor, wherein if the resonance potential is lower than a critical potential, the control circuit will forcibly turn on the power switch; The critical potential is determined according to the reference potential.

為讓本發明之目的、特徵和優點能更明顯易懂,下文特舉出本發明之具體實施例,並配合所附圖式,作詳細說明如下。In order to make the purpose, features and advantages of the present invention more comprehensible, specific embodiments of the present invention are specifically listed below, in conjunction with the accompanying drawings, and are described in detail as follows.

在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的元件。本領域技術人員應可理解,硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及申請專利範圍並不以名稱的差異來作為區分元件的方式,而是以元件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」及「包括」一詞為開放式的用語,故應解釋成「包含但不僅限定於」。「大致」一詞則是指在可接受的誤差範圍內,本領域技術人員能夠在一定誤差範圍內解決所述技術問題,達到所述基本之技術效果。此外,「耦接」一詞在本說明書中包含任何直接及間接的電性連接手段。因此,若文中描述一第一裝置耦接至一第二裝置,則代表該第一裝置可直接電性連接至該第二裝置,或經由其它裝置或連接手段而間接地電性連接至該第二裝置。Certain vocabulary is used to refer to specific elements in the specification and the scope of the patent application. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and the scope of the patent application do not use differences in names as a way to distinguish elements, but use differences in functions of elements as a criterion for distinguishing. The terms "include" and "include" mentioned in the entire specification and the scope of the patent application are open-ended terms and should be interpreted as "including but not limited to". The term "approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and achieve the basic technical effect. In addition, the term "coupling" includes any direct and indirect electrical connection means in this specification. Therefore, if it is described in the text that a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means. Two devices.

第1圖係顯示根據本發明一實施例所述之電源供應器100之示意圖。例如,電源供應器100可應用於桌上型電腦、筆記型電腦,或一體成形電腦。如第1圖所示,電源供應器100包括:一輸入級電路110、一變壓器120、一輸出級電路130、一功率切換器140、一脈衝寬度調變積體電路150,以及一控制電路160。必須注意的是,雖然未顯示於第1圖中,但電源供應器100更可包括其他元件,例如:一穩壓器或(且)一負回授電路。FIG. 1 shows a schematic diagram of a power supply 100 according to an embodiment of the invention. For example, the power supply 100 can be applied to a desktop computer, a notebook computer, or an integrated computer. As shown in Figure 1, the power supply 100 includes: an input stage circuit 110, a transformer 120, an output stage circuit 130, a power switch 140, a pulse width modulation integrated circuit 150, and a control circuit 160 . It should be noted that although not shown in Figure 1, the power supply 100 may further include other components, such as a voltage regulator or (and) a negative feedback circuit.

輸入級電路110可根據一輸入電位VIN來產生一參考電位VE。輸入電位VIN可來自一外部輸入電源。例如,輸入電位VIN可大致為一直流電位,其電位位準可由100V至400V,但亦不僅限於此。變壓器120包括一主線圈121、一副線圈122,以及一激磁電感器LM,其中主線圈121和激磁電感器LM皆可位於變壓器120之同一側,而副線圈122則可位於變壓器120之相對另一側。主線圈121可接收輸入電位VIN,而作為對於輸入電位VIN之回應,副線圈122可產生一感應電位VS。激磁電感器LM可為變壓器120製造時所附帶產生之一固有元件,其並非一外部獨立元件。輸出級電路130可根據感應電位VS來產生一輸出電位VOUT。例如,輸出電位VOUT可為另一直流電位,其電位位準可由18V至22V,但亦不僅限於此。功率切換器140係根據一脈衝寬度調變電位VA來選擇性地將主線圈121和激磁電感器LM皆耦接至一接地電位VSS(例如:0V)。例如,若脈衝寬度調變電位VA為高邏輯位準(亦即,邏輯「1」),則功率切換器140即將主線圈121和激磁電感器LM皆耦接至接地電位VSS(亦即,功率切換器140可近似於一短路路徑);反之,若脈衝寬度調變電位VA為低邏輯位準(亦即,邏輯「0」),則功率切換器140不會將主線圈121和激磁電感器LM耦接至接地電位VSS(亦即,功率切換器140可近似於一開路路徑)。另外,功率切換器140可內建一寄生電容器CP。必須理解的是,功率切換器140之二端之間之總寄生電容可模擬為前述之寄生電容器CP,其並非一外部獨立元件。脈衝寬度調變積體電路150可產生脈衝寬度調變電位VA。控制電路160可監控激磁電感器LM和寄生電容器CP之間之一諧振電位VR,而若諧振電位VR低於一臨界電位VTH,則控制電路160將強制導通功率切換器140,使得主線圈121和激磁電感器LM皆被耦接至接地電位VSS。必須注意的是,臨界電位VTH可根據輸入級電路110之參考電位VE而決定。在此設計下,一旦激磁電感器LM與寄生電容器CP之間產生振鈴效應,控制電路160將可立即導通功率切換器140以消除此一非理想特性。因此,本發明可減少功率切換器140之切換損失,同時提高電源供應器100之轉換效率。The input stage circuit 110 can generate a reference potential VE according to an input potential VIN. The input potential VIN can come from an external input power source. For example, the input potential VIN can be roughly a DC potential, and its potential level can be from 100V to 400V, but it is not limited to this. The transformer 120 includes a main coil 121, a secondary coil 122, and a magnetizing inductor LM. The main coil 121 and the magnetizing inductor LM can be located on the same side of the transformer 120, and the secondary coil 122 can be located on the opposite side of the transformer 120. One side. The main coil 121 can receive the input potential VIN, and in response to the input potential VIN, the auxiliary coil 122 can generate an induced potential VS. The magnetizing inductor LM may be an inherent component that is incidental to the manufacture of the transformer 120, and it is not an external independent component. The output stage circuit 130 can generate an output potential VOUT according to the induced potential VS. For example, the output potential VOUT can be another DC potential, and its potential level can be from 18V to 22V, but it is not limited to this. The power switch 140 selectively couples both the main coil 121 and the magnetizing inductor LM to a ground potential VSS (for example, 0V) according to a pulse width modulation potential VA. For example, if the pulse width modulation potential VA is a high logic level (ie, logic "1"), the power switch 140 will couple the main coil 121 and the magnetizing inductor LM to the ground potential VSS (ie, The power switch 140 can be approximated as a short-circuit path); on the contrary, if the pulse width modulation potential VA is a low logic level (that is, logic "0"), the power switch 140 will not energize the main coil 121 and The inductor LM is coupled to the ground potential VSS (that is, the power switch 140 can be approximated as an open path). In addition, the power switch 140 may have a built-in parasitic capacitor CP. It must be understood that the total parasitic capacitance between the two ends of the power switch 140 can be simulated as the aforementioned parasitic capacitor CP, which is not an external independent component. The pulse width modulation integrated circuit 150 can generate a pulse width modulation potential VA. The control circuit 160 can monitor a resonance potential VR between the magnetizing inductor LM and the parasitic capacitor CP, and if the resonance potential VR is lower than a critical potential VTH, the control circuit 160 will forcibly turn on the power switch 140 so that the main coil 121 and The magnetizing inductors LM are all coupled to the ground potential VSS. It should be noted that the threshold potential VTH can be determined according to the reference potential VE of the input stage circuit 110. Under this design, once a ringing effect occurs between the magnetizing inductor LM and the parasitic capacitor CP, the control circuit 160 can immediately turn on the power switch 140 to eliminate this non-ideal characteristic. Therefore, the present invention can reduce the switching loss of the power switch 140 and improve the conversion efficiency of the power supply 100 at the same time.

以下實施例將介紹電源供應器100之詳細結構及操作方式。必須理解的是,這些圖式和敘述僅為舉例,而非用於限制本發明之範圍。The following embodiments will introduce the detailed structure and operation of the power supply 100. It must be understood that these drawings and descriptions are only examples, and are not used to limit the scope of the present invention.

第2圖係顯示根據本發明一實施例所述之電源供應器200之示意圖。在第2圖之實施例中,電源供應器200具有一輸入節點NIN和一輸出節點NOUT,並包括一輸入級電路210、一變壓器220、一輸出級電路230、一功率切換器240、一脈衝寬度調變積體電路250,以及一控制電路260。電源供應器200之輸入節點NIN可由一外部輸入電源處接收一輸入電位VIN,而電源供應器200之輸出節點NOUT可輸出一輸出電位VOUT至一電子裝置。FIG. 2 is a schematic diagram of the power supply 200 according to an embodiment of the invention. In the embodiment of Figure 2, the power supply 200 has an input node NIN and an output node NOUT, and includes an input stage circuit 210, a transformer 220, an output stage circuit 230, a power switch 240, and a pulse Width modulation integrated circuit 250, and a control circuit 260. The input node NIN of the power supply 200 can receive an input potential VIN from an external input power source, and the output node NOUT of the power supply 200 can output an output potential VOUT to an electronic device.

輸入級電路210包括一第一二極體D1、一第一電阻器R1,以及一第一電容器C1。第一二極體D1之陽極係耦接至輸入節點NIN,而第一二極體D1之陰極係耦接至一第一節點N1以輸出一參考電位VE。第一電阻器R1之第一端係耦接至第一節點N1,而第一電阻器R1之第二端係耦接至一第二節點N2。第一電容器C1之第一端係耦接至第二節點N2,而第一電容器C1之第二端係耦接至一接地電位VSS。The input stage circuit 210 includes a first diode D1, a first resistor R1, and a first capacitor C1. The anode of the first diode D1 is coupled to the input node NIN, and the cathode of the first diode D1 is coupled to a first node N1 to output a reference potential VE. The first end of the first resistor R1 is coupled to the first node N1, and the second end of the first resistor R1 is coupled to a second node N2. The first terminal of the first capacitor C1 is coupled to the second node N2, and the second terminal of the first capacitor C1 is coupled to a ground potential VSS.

變壓器220包括一主線圈221、一副線圈222,以及一激磁電感器LM,其中主線圈221和激磁電感器LM皆可位於變壓器220之同一側,而副線圈222則可位於變壓器220之相對另一側。主線圈221之第一端係耦接至輸入節點NIN,而主線圈221之第二端係耦接至一第三節點N3。副線圈222之第一端係耦接至一第四節點N4以輸出一感應電位VS,而副線圈222之第二端係耦接至一第五節點N5。激磁電感器LM之第一端係耦接至輸入節點NIN,而激磁電感器LM之第二端係耦接至第三節點N3。The transformer 220 includes a main coil 221, a secondary coil 222, and a magnetizing inductor LM. The main coil 221 and the magnetizing inductor LM can be located on the same side of the transformer 220, and the secondary coil 222 can be located on the opposite side of the transformer 220. One side. The first end of the main coil 221 is coupled to the input node NIN, and the second end of the main coil 221 is coupled to a third node N3. The first end of the auxiliary winding 222 is coupled to a fourth node N4 to output an induced potential VS, and the second end of the auxiliary winding 222 is coupled to a fifth node N5. The first end of the magnetizing inductor LM is coupled to the input node NIN, and the second end of the magnetizing inductor LM is coupled to the third node N3.

輸出級電路230包括一第二二極體D2和一第二電容器C2。第二二極體D2之陽極係耦接至第四節點N4以接收感應電位VS,而第二二極體D2之陰極係耦接至輸出節點NOUT。第二電容器C2之第一端係耦接至輸出節點NOUT,而第二電容器C2之第二端係耦接至第五節點N5。第五節點N5可視為一共同節點或是另一接地節點。The output stage circuit 230 includes a second diode D2 and a second capacitor C2. The anode of the second diode D2 is coupled to the fourth node N4 to receive the induced potential VS, and the cathode of the second diode D2 is coupled to the output node NOUT. The first end of the second capacitor C2 is coupled to the output node NOUT, and the second end of the second capacitor C2 is coupled to the fifth node N5. The fifth node N5 can be regarded as a common node or another ground node.

功率切換器240包括一第一電晶體M1。第一電晶體M1可為一N型金氧半場效電晶體。第一電晶體M1之控制端係耦接至一第六節點N6以接收一脈衝寬度調變電位VA,第一電晶體M1之第一端係耦接至接地電位VSS,而第一電晶體M1之第二端係耦接至第三節點N3。功率切換器240內建一寄生電容器CP。寄生電容器CP之第一端係耦接至第三節點N3以輸出一諧振電位VR,而寄生電容器CP之第二端係耦接至接地電位VSS。必須理解的是,第一電晶體M1之第一端和第二端之間之總寄生電容可模擬為前述之寄生電容器CP,其並非一外部獨立元件。The power switch 240 includes a first transistor M1. The first transistor M1 can be an N-type MOSFET. The control terminal of the first transistor M1 is coupled to a sixth node N6 to receive a pulse width modulation potential VA, the first terminal of the first transistor M1 is coupled to the ground potential VSS, and the first transistor The second end of M1 is coupled to the third node N3. The power switch 240 has a built-in parasitic capacitor CP. The first end of the parasitic capacitor CP is coupled to the third node N3 to output a resonance potential VR, and the second end of the parasitic capacitor CP is coupled to the ground potential VSS. It must be understood that the total parasitic capacitance between the first terminal and the second terminal of the first transistor M1 can be simulated as the aforementioned parasitic capacitor CP, which is not an external independent component.

脈衝寬度調變積體電路250可於第六節點N6處輸出脈衝寬度調變電位VA,而脈衝寬度調變電位VA可用於調整功率切換器240之工作週期。例如,脈衝寬度調變電位VA於電源供應器200初始化時可維持於一固定電位,而在電源供應器200進入正常使用階段後則可提供週期性之時脈波形。另外,脈衝寬度調變電位VA亦有可能為控制電路260所改變。The pulse width modulation integrated circuit 250 can output the pulse width modulation potential VA at the sixth node N6, and the pulse width modulation potential VA can be used to adjust the duty cycle of the power switch 240. For example, the pulse width modulation potential VA can be maintained at a fixed potential when the power supply 200 is initialized, and can provide a periodic clock waveform after the power supply 200 enters the normal use phase. In addition, the pulse width modulation potential VA may also be changed by the control circuit 260.

控制電路260包括一比較器262、一第三二極體D3、一第二電晶體M2、一第三電晶體M3、一第二電阻器R2,以及一第三電阻器R3。比較器262可藉由一運算放大器來實施。第二電晶體M2和第三電晶體M3可各自為一N型金氧半場效電晶體。三二極體D3之陽極係耦接至第三節點N3以接收諧振電位VR,而第三二極體D3之陰極係耦接至一第七節點N7。第二電晶體M2之控制端係耦接至第七節點N7,第二電晶體M2之第一端係耦接至一第八節點N8以輸出一臨界電位VTH,而第二電晶體M2之第二端係耦接至一第九節點N9。第二電阻器R2之第一端係耦接至第一節點N1以接收參考電位VE,而第二電阻器R2之第二端係耦接至第九節點N9。第三電阻器R3之第一端係耦接至第八節點N8,而第三電阻器R3之第二端係耦接至一第十節點N10。第三電晶體M3之控制端係耦接至第三節點N3以接收諧振電位VR,第三電晶體M3之第一端係耦接至接地電位VSS,而第三電晶體M3之第二端係耦接至第十節點N10。比較器262之正輸入端係耦接至第八節點N8以接收臨界電位VTH,比較器262之負輸入端係耦接至第三節點N3以接收諧振電位VR,而比較器262之輸出端係耦接至第六節點N6。若諧振電位VR高於或等於臨界電位VTH,則比較器262不會影響脈衝寬度調變電位VA;反之,若諧振電位VR低於臨界電位VTH,則比較器262會強制把脈衝寬度調變電位VA拉升至高邏輯位準以導通第一電晶體M1。The control circuit 260 includes a comparator 262, a third diode D3, a second transistor M2, a third transistor M3, a second resistor R2, and a third resistor R3. The comparator 262 can be implemented by an operational amplifier. The second transistor M2 and the third transistor M3 can each be an N-type MOSFET. The anode of the triode D3 is coupled to the third node N3 to receive the resonance potential VR, and the cathode of the third diode D3 is coupled to a seventh node N7. The control terminal of the second transistor M2 is coupled to the seventh node N7, the first terminal of the second transistor M2 is coupled to an eighth node N8 to output a threshold potential VTH, and the first terminal of the second transistor M2 The two terminals are coupled to a ninth node N9. The first end of the second resistor R2 is coupled to the first node N1 to receive the reference potential VE, and the second end of the second resistor R2 is coupled to the ninth node N9. The first end of the third resistor R3 is coupled to the eighth node N8, and the second end of the third resistor R3 is coupled to a tenth node N10. The control terminal of the third transistor M3 is coupled to the third node N3 to receive the resonance potential VR, the first terminal of the third transistor M3 is coupled to the ground potential VSS, and the second terminal of the third transistor M3 is Coupled to the tenth node N10. The positive input terminal of the comparator 262 is coupled to the eighth node N8 to receive the threshold potential VTH, the negative input terminal of the comparator 262 is coupled to the third node N3 to receive the resonance potential VR, and the output terminal of the comparator 262 is Coupled to the sixth node N6. If the resonance potential VR is higher than or equal to the critical potential VTH, the comparator 262 will not affect the pulse width modulation potential VA; on the contrary, if the resonance potential VR is lower than the critical potential VTH, the comparator 262 will force the pulse width modulation The potential VA is pulled up to a high logic level to turn on the first transistor M1.

在一些實施例中,電源供應器200可操作於一初始模式、一第一模式,或是一第二模式,其操作原理將分別如下列所述。In some embodiments, the power supply 200 can operate in an initial mode, a first mode, or a second mode, and the operating principles will be as follows, respectively.

在初始模式中,第一電晶體M1、第二電晶體M2、第三電晶體M3,以及第二二極體D2皆被關閉。In the initial mode, the first transistor M1, the second transistor M2, the third transistor M3, and the second diode D2 are all turned off.

在第一模式中,脈衝寬度調變電位VA為高邏輯位準且第一電晶體M1被導通。第一電容器C1係由輸入電位VIN經過第一二極體D1和第一電阻器R2進行充電。此時,激磁電感器LM具有一正電壓(亦即,輸入節點NIN之輸入電位VIN高於第三節點N3之諧振電位VR)。因此,第三二極體D3、第二電晶體M2,以及第三電晶體M3皆被關閉,而比較器262不會影響脈衝寬度調變電位VA。In the first mode, the pulse width modulation potential VA is at a high logic level and the first transistor M1 is turned on. The first capacitor C1 is charged by the input potential VIN through the first diode D1 and the first resistor R2. At this time, the magnetizing inductor LM has a positive voltage (that is, the input potential VIN of the input node NIN is higher than the resonance potential VR of the third node N3). Therefore, the third diode D3, the second transistor M2, and the third transistor M3 are all turned off, and the comparator 262 does not affect the pulse width modulation potential VA.

在第二模式中,脈衝寬度調變電位VA為由高邏輯位準切換至低邏輯位準且第一電晶體M1被關閉。根據冷次定律,激磁電感器LM會瞬間轉為具有一負電壓(亦即,輸入節點NIN之輸入電位VIN低於第三節點N3之諧振電位VR)。此時,功率切換器240之寄生電容器CP會與變壓器220之激磁電感器LM產生共振(亦即,振鈴效應),而第三二極體D3、第二電晶體M2,以及第三電晶體M3皆被導通,使得臨界電位VTH成為參考電位VE之一特定比率。在一些實施例中,臨界電位VTH恰與參考電位VE成正比關係,其可大致如下列方程式(1)所述:In the second mode, the pulse width modulation potential VA is switched from a high logic level to a low logic level and the first transistor M1 is turned off. According to the cold order law, the magnetizing inductor LM will instantly turn to have a negative voltage (that is, the input potential VIN of the input node NIN is lower than the resonance potential VR of the third node N3). At this time, the parasitic capacitor CP of the power switch 240 will resonate with the magnetizing inductor LM of the transformer 220 (that is, the ringing effect), and the third diode D3, the second transistor M2, and the third transistor M3 Both are turned on, so that the critical potential VTH becomes a specific ratio of the reference potential VE. In some embodiments, the critical potential VTH is directly proportional to the reference potential VE, which can be roughly as described in the following equation (1):

Figure 02_image001
…………………………(1) 其中「VTH」代表臨界電位VTH之位準,「VE」代表參考電位VE之位準,「R2」代表第二電阻器R2之電阻值,而「R3」代表第三電阻器R3之電阻值。
Figure 02_image001
……………………(1) where "VTH" represents the level of the critical potential VTH, "VE" represents the level of the reference potential VE, "R2" represents the resistance value of the second resistor R2, and "R3" represents the resistance value of the third resistor R3.

當寄生電容器CP所儲存之諧振電位VR低於臨界電位VTH時,比較器262會強制把脈衝寬度調變電位VA拉升至高邏輯位準以導通第一電晶體M1。因此,電源供應器200會由第二模式被強制切換回第一模式,而電源供應器200中非理想之振鈴效應亦可以被完全消除。When the resonance potential VR stored in the parasitic capacitor CP is lower than the critical potential VTH, the comparator 262 will force the pulse width modulation potential VA to rise to a high logic level to turn on the first transistor M1. Therefore, the power supply 200 is forced to switch from the second mode to the first mode, and the non-ideal ringing effect in the power supply 200 can be completely eliminated.

第3圖係顯示傳統電源供應器之電位波形圖,其中橫軸代表時間,而縱軸代表電位位準或是電流值。若未使用控制電路260,在通過第二二極體D2之電流I2下降為0之後,功率切換器240之寄生電容器CP與變壓器220之激磁電感器LM之間將容易發生振鈴效應(如第一虛線框370處所示)。Figure 3 shows the potential waveform of a conventional power supply, where the horizontal axis represents time, and the vertical axis represents potential level or current value. If the control circuit 260 is not used, after the current I2 passing through the second diode D2 drops to zero, a ringing effect will easily occur between the parasitic capacitor CP of the power switch 240 and the magnetizing inductor LM of the transformer 220 (such as the first Shown at the dashed box 370).

第4圖係顯示根據本發明一實施例所述之電源供應器200之電位波形圖,其中橫軸代表時間,而縱軸代表電位位準或是電流值。根據第4圖之量測結果,若已使用控制電路260,在通過第二二極體D2之電流I2下降為0之後,功率切換器240之寄生電容器CP與變壓器220之激磁電感器LM之間之振鈴效應將會快速地被抑制(如第二虛線框470處所示)。詳細而言,激磁電感器LM和寄生電容器CP之間之諧振電位VR可於其自身之第一次波谷處即被直接下拉至接地電位VSS,故電源供應器200之非理想特性將能有效被消除。Fig. 4 shows a potential waveform diagram of the power supply 200 according to an embodiment of the present invention, in which the horizontal axis represents time, and the vertical axis represents potential level or current value. According to the measurement result in Figure 4, if the control circuit 260 has been used, after the current I2 through the second diode D2 drops to 0, the parasitic capacitor CP of the power switch 240 and the magnetizing inductor LM of the transformer 220 The ringing effect will be quickly suppressed (as shown at the second dashed box 470). In detail, the resonance potential VR between the magnetizing inductor LM and the parasitic capacitor CP can be directly pulled down to the ground potential VSS at its own first trough, so the non-ideal characteristics of the power supply 200 will be effectively reduced eliminate.

在一些實施例中,電源供應器200之元件參數可如下列所述。激磁電感器LM之電感值可介於285μH至315μH之間,較佳可為300μH。寄生電容器CP之電容值可介於90pF至110pF之間,較佳可為100pF。第一電容器C1之電容值可介於108μF至132μF之間,較佳可為120μF。第二電容器C1之電容值可介於612μF至748μF之間,較佳可為680μF。第一電阻器R1之電阻值可介於9.5KΩ至10.5KΩ之間,較佳可為10KΩ。第二電阻器R2之電阻值可介於13.3KΩ至14.7KΩ之間,較佳可為14KΩ。第三電阻器R3之電阻值可介於0.95KΩ至1.05KΩ之間,較佳可為1KΩ。主線圈221對副線圈222之匝數比值可介於1至100之間,較佳可為10。以上參數範圍係根據多次實驗結果而得出,其有助於最佳化電源供應器200之轉換效率。In some embodiments, the component parameters of the power supply 200 may be as described below. The inductance value of the magnetizing inductor LM can be between 285 μH and 315 μH, preferably 300 μH. The capacitance value of the parasitic capacitor CP may be between 90 pF and 110 pF, preferably 100 pF. The capacitance value of the first capacitor C1 may be between 108 μF and 132 μF, preferably 120 μF. The capacitance value of the second capacitor C1 may be between 612 μF and 748 μF, preferably 680 μF. The resistance value of the first resistor R1 may be between 9.5KΩ and 10.5KΩ, and preferably may be 10KΩ. The resistance value of the second resistor R2 may be between 13.3KΩ and 14.7KΩ, and preferably may be 14KΩ. The resistance value of the third resistor R3 may be between 0.95KΩ and 1.05KΩ, and preferably may be 1KΩ. The ratio of the number of turns of the primary coil 221 to the secondary coil 222 can be between 1 and 100, and preferably can be 10. The above parameter range is obtained based on the results of many experiments, which helps to optimize the conversion efficiency of the power supply 200.

本發明提出一種新穎之電源供應器,其包括控制電路以抑制振鈴效應。根據實際量測結果,使用前述設計之電源供應器可幾乎完全消除激磁電感器和寄生電容器之間之非理想特性。由於本發明可改善電源供應器之轉換效率並降低其電磁干擾現象,故其很適合應用於各種各式之裝置當中。The present invention proposes a novel power supply, which includes a control circuit to suppress the ringing effect. According to the actual measurement results, the use of the aforementioned power supply design can almost completely eliminate the non-ideal characteristics between the magnetizing inductor and the parasitic capacitor. Since the present invention can improve the conversion efficiency of the power supply and reduce its electromagnetic interference phenomenon, it is very suitable for application in various types of devices.

值得注意的是,以上所述之電位、電流、電阻值、電感值、電容值,以及其餘元件參數均非為本發明之限制條件。設計者可以根據不同需要調整這些設定值。本發明之電源供應器並不僅限於第1-4圖所圖示之狀態。本發明可以僅包括第1-4圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本發明之電源供應器當中。雖然本發明之實施例係使用金氧半場效電晶體為例,但本發明並不僅限於此,本技術領域人士可改用其他種類之電晶體,例如:接面場效電晶體,或是鰭式場效電晶體等等,而不致於影響本發明之效果。It is worth noting that the above-mentioned potential, current, resistance value, inductance value, capacitance value, and other component parameters are not limitations of the present invention. The designer can adjust these settings according to different needs. The power supply of the present invention is not limited to the state shown in Figures 1-4. The present invention may only include any one or more of the features of any one or more of the embodiments shown in FIGS. 1-4. In other words, not all the features shown in the figures need to be implemented in the power supply of the present invention at the same time. Although the embodiment of the present invention uses metal oxide half field effect transistors as an example, the present invention is not limited to this. Those skilled in the art can use other types of transistors, such as junction field effect transistors or fins. Type field effect transistors, etc., without affecting the effect of the present invention.

本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention is disclosed as above in a preferred embodiment, it is not intended to limit the scope of the present invention. Anyone who is familiar with the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The scope of protection of the present invention shall be subject to those defined by the attached patent scope.

100,200:電源供應器 110,210:輸入級電路 120,220:變壓器 121,221:主線圈 122,222:副線圈 130,230:輸出級電路 140,240:功率切換器 150,250:脈衝寬度調變積體電路 160,260:控制電路 262:比較器 370:第一虛線框 470:第二虛線框 C1:第一電容器 C2:第二電容器 CP:寄生電容器 D1:第一二極體 D2:第二二極體 D3:第三二極體 I2:電流 LM:激磁電感器 M1:第一電晶體 M2:第二電晶體 M3:第三電晶體 N1:第一節點 N2:第二節點 N3:第三節點 N4:第四節點 N5:第五節點 N6:第六節點 N7:第七節點 N8:第八節點 N9:第九節點 N10:第十節點 NIN:輸入節點 NOUT:輸出節點 R1:第一電阻器 R2:第二電阻器 R3:第三電阻器 VA:脈衝寬度調變電位 VE:參考電位 VIN:輸入電位 VOUT:輸出電位 VR:諧振電位 VS:感應電位 VSS:接地電位 VTH:臨界電位100,200: power supply 110, 210: Input stage circuit 120, 220: Transformer 121, 221: main coil 122,222: secondary coil 130, 230: output stage circuit 140, 240: power switch 150, 250: Pulse width modulation integrated circuit 160, 260: control circuit 262: Comparator 370: The first dashed frame 470: Second dotted frame C1: The first capacitor C2: second capacitor CP: Parasitic capacitor D1: The first diode D2: The second diode D3: The third diode I2: current LM: Magnetizing inductor M1: The first transistor M2: second transistor M3: third transistor N1: the first node N2: second node N3: third node N4: Fourth node N5: fifth node N6: sixth node N7: seventh node N8: The eighth node N9: Ninth node N10: Tenth node NIN: input node NOUT: output node R1: first resistor R2: second resistor R3: third resistor VA: Pulse width modulation potential VE: Reference potential VIN: input potential VOUT: output potential VR: resonance potential VS: induced potential VSS: Ground potential VTH: critical potential

第1圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第2圖係顯示根據本發明一實施例所述之電源供應器之示意圖。 第3圖係顯示傳統電源供應器之電位波形圖。 第4圖係顯示根據本發明一實施例所述之電源供應器之電位波形圖。Figure 1 is a schematic diagram of a power supply according to an embodiment of the invention. FIG. 2 is a schematic diagram of the power supply according to an embodiment of the invention. Figure 3 shows the potential waveform diagram of the traditional power supply. Figure 4 is a diagram showing the potential waveform of the power supply according to an embodiment of the present invention.

100:電源供應器100: power supply

110:輸入級電路110: Input stage circuit

120:變壓器120: Transformer

121:主線圈121: main coil

122:副線圈122: secondary coil

130:輸出級電路130: output stage circuit

140:功率切換器140: power switch

150:脈衝寬度調變積體電路150: Pulse width modulation integrated circuit

160:控制電路160: control circuit

CP:寄生電容器CP: Parasitic capacitor

LM:激磁電感器LM: Magnetizing inductor

VA:脈衝寬度調變電位VA: Pulse width modulation potential

VE:參考電位VE: Reference potential

VIN:輸入電位VIN: input potential

VOUT:輸出電位VOUT: output potential

VR:諧振電位VR: resonance potential

VS:感應電位VS: induced potential

VSS:接地電位VSS: Ground potential

VTH:臨界電位VTH: critical potential

Claims (10)

一種消除振鈴效應之電源供應器,包括: 一輸入級電路,根據該輸入電位來產生一參考電位; 一變壓器,包括一主線圈、一副線圈,以及一激磁電感器,其中該主線圈係用於接收該輸入電位,而該副線圈係用於產生一感應電位; 一輸出級電路,根據該感應電位來產生一輸出電位; 一功率切換器,根據一脈衝寬度調變電位來選擇性地將該主線圈和該激磁電感器皆耦接至一接地電位,其中該功率切換器內建一寄生電容器; 一脈衝寬度調變積體電路,產生該脈衝寬度調變電位;以及 一控制電路,監控該激磁電感器和該寄生電容器之間之一諧振電位,其中若該諧振電位低於一臨界電位,則該控制電路將強制導通該功率切換器; 其中該臨界電位係根據該參考電位而決定。A power supply for eliminating the ringing effect, including: An input stage circuit generates a reference potential according to the input potential; A transformer, including a main coil, a secondary coil, and a magnetizing inductor, wherein the primary coil is used to receive the input potential, and the secondary coil is used to generate an induced potential; An output stage circuit generates an output potential according to the induced potential; A power switch, which selectively couples the main coil and the magnetizing inductor to a ground potential according to a pulse width modulation potential, wherein the power switch has a built-in parasitic capacitor; A pulse width modulation integrated circuit to generate the pulse width modulation potential; and A control circuit that monitors a resonance potential between the magnetizing inductor and the parasitic capacitor, wherein if the resonance potential is lower than a critical potential, the control circuit will forcibly turn on the power switch; The critical potential is determined according to the reference potential. 如請求項1所述之電源供應器,其中該輸入級電路包括: 一第一二極體,具有一陽極和一陰極,其中該第一二極體之該陽極係耦接至一輸入節點以接收該輸入電位,而該第一二極體之該陰極係耦接至一第一節點以輸出該參考電位; 一第一電阻器,具有一第一端和一第二端,其中該第一電阻器之該第一端係耦接至該第一節點,而該第一電阻器之該第二端係耦接至一第二節點;以及 一第一電容器,具有一第一端和一第二端,其中該第一電容器之該第一端係耦接至該第二節點,而該第一電容器之該第二端係耦接至該接地電位。The power supply according to claim 1, wherein the input stage circuit includes: A first diode has an anode and a cathode, wherein the anode of the first diode is coupled to an input node to receive the input potential, and the cathode of the first diode is coupled To a first node to output the reference potential; A first resistor has a first end and a second end, wherein the first end of the first resistor is coupled to the first node, and the second end of the first resistor is coupled Connected to a second node; and A first capacitor has a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the second node, and the second terminal of the first capacitor is coupled to the Ground potential. 如請求項2所述之電源供應器,其中該主線圈具有一第一端和一第二端,該主線圈之該第一端係耦接至該輸入節點以接收該輸入電位,該主線圈之該第二端係耦接至一第三節點,該副線圈具有一第一端和一第二端,該副線圈之該第一端係耦接至一第四節點以輸出該感應電位,該副線圈之該第二端係耦接至一第五節點,該激磁電感器具有一第一端和一第二端,該激磁電感器之該第一端係耦接至該輸入節點,而該激磁電感器之該第二端係耦接至該第三節點。The power supply of claim 2, wherein the main coil has a first end and a second end, the first end of the main coil is coupled to the input node to receive the input potential, and the main coil The second end is coupled to a third node, the auxiliary coil has a first end and a second end, and the first end of the auxiliary coil is coupled to a fourth node to output the induced potential, The second end of the auxiliary winding is coupled to a fifth node, the exciting inductor has a first end and a second end, the first end of the exciting inductor is coupled to the input node, and the The second end of the magnetizing inductor is coupled to the third node. 如請求項3所述之電源供應器,其中該輸出級電路包括: 一第二二極體,具有一陽極和一陰極,其中該第二二極體之該陽極係耦接至該第四節點以接收該感應電位,而該第二二極體之該陰極係耦接至一輸出節點以輸出該輸出電位;以及 一第二電容器,具有一第一端和一第二端,其中該第二電容器之該第一端係耦接至該輸出節點,而該第二電容器之該第二端係耦接至該第五節點。The power supply according to claim 3, wherein the output stage circuit includes: A second diode has an anode and a cathode, wherein the anode of the second diode is coupled to the fourth node to receive the induced potential, and the cathode of the second diode is coupled Connected to an output node to output the output potential; and A second capacitor has a first terminal and a second terminal, wherein the first terminal of the second capacitor is coupled to the output node, and the second terminal of the second capacitor is coupled to the first terminal Five nodes. 如請求項4所述之電源供應器,其中該功率切換器包括: 一第一電晶體,具有一控制端、一第一端,以及一第二端,其中該第一電晶體之該控制端係耦接至一第六節點以接收該脈衝寬度調變電位,該第一電晶體之該第一端係耦接至該接地電位,而該第一電晶體之該第二端係耦接至該第三節點。The power supply according to claim 4, wherein the power switch includes: A first transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the first transistor is coupled to a sixth node to receive the pulse width modulation potential, The first terminal of the first transistor is coupled to the ground potential, and the second terminal of the first transistor is coupled to the third node. 如請求項5所述之電源供應器,其中該寄生電容器具有一第一端和一第二端,該寄生電容器之該第一端係耦接至該第三節點以輸出該諧振電位,而該寄生電容器之該第二端係耦接至該接地電位。The power supply of claim 5, wherein the parasitic capacitor has a first terminal and a second terminal, the first terminal of the parasitic capacitor is coupled to the third node to output the resonance potential, and the The second end of the parasitic capacitor is coupled to the ground potential. 如請求項6所述之電源供應器,其中該控制電路包括: 一第三二極體,具有一陽極和一陰極,其中該第三二極體之該陽極係耦接至該第三節點以接收該諧振電位,而該第三二極體之該陰極係耦接至一第七節點; 一第二電晶體,具有一控制端、一第一端,以及一第二端,其中該第二電晶體之該控制端係耦接至該第七節點,該第二電晶體之該第一端係耦接至一第八節點以輸出該臨界電位,而該第二電晶體之該第二端係耦接至一第九節點;以及 一第二電阻器,具有一第一端和一第二端,其中該第二電阻器之該第一端係耦接至該第一節點以接收該參考電位,而該第二電阻器之該第二端係耦接至該第九節點。The power supply according to claim 6, wherein the control circuit includes: A third diode has an anode and a cathode, wherein the anode of the third diode is coupled to the third node to receive the resonance potential, and the cathode of the third diode is coupled Connected to a seventh node; A second transistor has a control terminal, a first terminal, and a second terminal, wherein the control terminal of the second transistor is coupled to the seventh node, and the first terminal of the second transistor The terminal is coupled to an eighth node to output the critical potential, and the second terminal of the second transistor is coupled to a ninth node; and A second resistor has a first terminal and a second terminal, wherein the first terminal of the second resistor is coupled to the first node to receive the reference potential, and the second resistor of the The second end is coupled to the ninth node. 如請求項7所述之電源供應器,其中該控制電路更包括: 一第三電阻器,具有一第一端和一第二端,其中該第三電阻器之該第一端係耦接至該第八節點,而該第三電阻器之該第二端係耦接至一第十節點;以及 一第三電晶體,具有一控制端、一第一端,以及一第二端,其中該第三電晶體之該控制端係耦接至該第三節點以接收該諧振電位,該第三電晶體之該第一端係耦接至該接地電位,而該第三電晶體之該第二端係耦接至該第十節點。The power supply according to claim 7, wherein the control circuit further includes: A third resistor has a first end and a second end, wherein the first end of the third resistor is coupled to the eighth node, and the second end of the third resistor is coupled Connected to a tenth node; and A third transistor has a control terminal, a first terminal, and a second terminal. The control terminal of the third transistor is coupled to the third node to receive the resonance potential. The first end of the crystal is coupled to the ground potential, and the second end of the third transistor is coupled to the tenth node. 如請求項8所述之電源供應器,其中該控制電路更包括: 一比較器,具有一正輸入端、一負輸入端,以及一輸出端,其中該比較器之該正輸入端係耦接至該第八節點以接收該臨界電位,該比較器之該負輸入端係耦接至該第三節點以接收該諧振電位,而該比較器之該輸出端係耦接至該第六節點。The power supply according to claim 8, wherein the control circuit further includes: A comparator having a positive input terminal, a negative input terminal, and an output terminal, wherein the positive input terminal of the comparator is coupled to the eighth node to receive the threshold potential, and the negative input of the comparator The terminal is coupled to the third node to receive the resonance potential, and the output terminal of the comparator is coupled to the sixth node. 如請求項9所述之電源供應器,其中該脈衝寬度調變積體電路係於該第六節點處輸出該脈衝寬度調變電位,而若該諧振電位低於該臨界電位,則該比較器會強制把該脈衝寬度調變電位拉升至高邏輯位準。The power supply according to claim 9, wherein the pulse width modulation integrated circuit outputs the pulse width modulation potential at the sixth node, and if the resonance potential is lower than the critical potential, the comparison The device will force the pulse width modulation potential to rise to a high logic level.
TW109113276A 2020-04-21 2020-04-21 Power supply device for eliminating ringing effect TWI715487B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109113276A TWI715487B (en) 2020-04-21 2020-04-21 Power supply device for eliminating ringing effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109113276A TWI715487B (en) 2020-04-21 2020-04-21 Power supply device for eliminating ringing effect

Publications (2)

Publication Number Publication Date
TWI715487B TWI715487B (en) 2021-01-01
TW202141905A true TW202141905A (en) 2021-11-01

Family

ID=75237362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109113276A TWI715487B (en) 2020-04-21 2020-04-21 Power supply device for eliminating ringing effect

Country Status (1)

Country Link
TW (1) TWI715487B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI237433B (en) * 2003-11-03 2005-08-01 Grand Power Sources Inc Electric charging system
US7710095B2 (en) * 2007-05-22 2010-05-04 System General Corporation Power converter having PWM controller for maximum output power compensation
TWI363481B (en) * 2008-03-28 2012-05-01 Delta Electronics Inc Synchronous rectifying circuit having burst mode controller and controlling method thereof
KR101445842B1 (en) * 2008-05-29 2014-10-01 페어차일드코리아반도체 주식회사 A converter
CN106533180B (en) * 2015-09-15 2019-03-01 群光电能科技股份有限公司 Power supply device

Also Published As

Publication number Publication date
TWI715487B (en) 2021-01-01

Similar Documents

Publication Publication Date Title
TW202101882A (en) Power supply device
TWI692185B (en) Boost converter
TWI740686B (en) Boost converter for reducing total harmonic distortion
TWI731675B (en) Power supply device for eliminating ringing effect
TWI726758B (en) Power supply device for eliminating ringing effect
TWI715487B (en) Power supply device for eliminating ringing effect
TWI746294B (en) Power supply device with low loss
TWI751644B (en) Power supply device with tunable gain
TWI698075B (en) Power supply device
TWI704757B (en) Boost converter
TWI704756B (en) Boost converter
CN113644823B (en) Power supply device for eliminating ringing effect
TWI751798B (en) Power supply device with tunable gain
TW202138959A (en) Power supply device for eliminating malfunction of over current protection
TWI812079B (en) Power supply device with high output stability
CN113938014B (en) Power supply device for eliminating ringing effect
TWI812354B (en) Power supply device with high efficiency
TWI837670B (en) Power supply device
TWI751659B (en) Power supply device for increasing switch life
TWI731674B (en) Power supply device with dynamic output
TW202343946A (en) Power supply device
TWI790937B (en) Power supply device for suppressing magnetic saturation
TWI832251B (en) Power supply device with high conversion efficiency
TWI740657B (en) Parallel power supply device for current balance
TWI812407B (en) Power supply device with high output stability