TW202137811A - Heat-generating film and method for manufacturing heat-generating film - Google Patents
Heat-generating film and method for manufacturing heat-generating film Download PDFInfo
- Publication number
- TW202137811A TW202137811A TW110104370A TW110104370A TW202137811A TW 202137811 A TW202137811 A TW 202137811A TW 110104370 A TW110104370 A TW 110104370A TW 110104370 A TW110104370 A TW 110104370A TW 202137811 A TW202137811 A TW 202137811A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- interval
- conductive
- transparent
- heating film
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
Abstract
Description
本發明係關於一種發熱膜及發熱膜之製造方法。The present invention relates to a heating film and a manufacturing method of the heating film.
汽車等車輛中,有時為了使駕駛中之駕駛者之視野維持良好而於窗或鏡子上設置防止霧氣、霜、水滴等附著之機構。例如,於汽車之後窗設置有由印刷於後窗之玻璃上之電熱線構成之除霧器。藉由利用除霧器之電熱線給玻璃加溫而能夠去除後窗之霧氣、霜(例如專利文獻1)。又,例如,於汽車之側鏡背面(背面側)設置有給側鏡加溫而防止水滴附著之加熱器(例如專利文獻2)。 [先前技術文獻] [專利文獻]In vehicles such as automobiles, in order to maintain a good view of the driver while driving, a mechanism is sometimes installed on the windows or mirrors to prevent the adhesion of fog, frost, water droplets, etc. For example, the rear window of a car is provided with a demister composed of a heating wire printed on the glass of the rear window. The mist and frost on the rear window can be removed by heating the glass with the heating wire of the demister (for example, Patent Document 1). In addition, for example, a heater for heating the side mirrors to prevent the adhesion of water droplets is provided on the back (rear side) of the side mirrors of automobiles (for example, Patent Document 2). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本專利特開2006-117026號公報 [專利文獻2]日本專利特開2005-138672號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-117026 [Patent Document 2] Japanese Patent Laid-Open No. 2005-138672
[發明所欲解決之問題][The problem to be solved by the invention]
然而,除霧器之電熱線可被視認,產生所謂「內部可視及現象」。因此,車輛駕駛者之視野受到妨礙,又,車輛之設計性亦降低。設置於側鏡之加熱器由於設置於鏡子之背面,故不會對車輛駕駛者之視野或車輛之設計性造成影響,但鏡子之加熱效率變低。為了改良加熱效率而將加熱器設置於側鏡之前表面會有損車輛駕駛者之視野,且使得車輛之設計性降低,故不理想。However, the electric heating wire of the defogger can be visually recognized, resulting in the so-called "internal visibility and phenomenon". Therefore, the vision of the vehicle driver is hindered, and the design of the vehicle is also reduced. Since the heater installed in the side mirror is installed on the back of the mirror, it will not affect the vision of the vehicle driver or the design of the vehicle, but the heating efficiency of the mirror becomes low. In order to improve the heating efficiency, installing the heater on the front surface of the side mirror will damage the vision of the vehicle driver and reduce the design of the vehicle, which is not ideal.
本發明係解決上述問題者,提供一種既維持車輛駕駛者之視野及車輛之設計性又能有效率地對車輛之窗、鏡子等進行加熱之發熱膜。 [解決問題之技術手段]The present invention solves the above-mentioned problems and provides a heat-generating film that not only maintains the vision of the vehicle driver and the design of the vehicle, but also efficiently heats the windows, mirrors, etc. of the vehicle. [Technical means to solve the problem]
根據第1形態,提供一種發熱膜,其具備:透明膜,其於表面具有於第1方向上延伸之複數個第1槽及於與第1方向交叉之第2方向上延伸之複數個第2槽;及導電部,其存在於第1及第2槽內;且上述導電部之線寬為0.2~10 μm,上述導電部之高度為0.5~10 μm,存在於相鄰之2個第1槽內之上述導電部間之間隔為20~1000 μm,存在於第1槽內之上述導電部與存在於第2槽內之上述導電部之交點之個數為20~2500個/cm2 ,上述導電部之面積比率為0.1~10%。According to a first aspect, there is provided a heat generating film comprising: a transparent film having a plurality of first grooves extending in a first direction and a plurality of second grooves extending in a second direction intersecting the first direction on the surface Grooves; and conductive parts, which are present in the first and second grooves; and the line width of the conductive part is 0.2-10 μm, the height of the conductive part is 0.5-10 μm, and it exists in two adjacent first The interval between the conductive parts in the groove is 20-1000 μm, and the number of intersections between the conductive parts in the first groove and the conductive parts in the second groove is 20-2500/cm 2 , The area ratio of the conductive portion is 0.1 to 10%.
上述發熱膜於波長550 nm下之光之透過率可為60~98%。上述發熱膜之面電阻值可為0.003~70 Ω/sq.。第1方向上之存在於相鄰之2個第2槽內之上述導電部間之間隔可為1000~15000 μm。第2方向可與第1方向正交。The light transmittance of the heating film at a wavelength of 550 nm can be 60-98%. The sheet resistance value of the heating film can be 0.003~70 Ω/sq. The interval between the above-mentioned conductive parts existing in two adjacent second grooves in the first direction may be 1000-15000 μm. The second direction may be orthogonal to the first direction.
可具備複數個由存在於複數個第1槽內之導電部構成之第1複線部,相鄰之2個第1複線部以20~1000 μm之第1間隔配置,構成第1複線部之上述複數個導電部以小於第1間隔之第4間隔配置。第4間隔可為0.2~20 μm。It can be equipped with a plurality of first multi-line parts composed of conductive parts existing in a plurality of first grooves, and two adjacent first multi-line parts are arranged at a first interval of 20-1000 μm to form the above-mentioned first multi-line part The plurality of conductive parts are arranged at a fourth interval smaller than the first interval. The fourth interval can be 0.2-20 μm.
可具備複數個由存在於複數個第2槽內之導電部構成之第2複線部,相鄰之2個第2複線部於第1方向上以第2間隔配置,構成第2複線部之上述複數個導電部於第1方向上以小於第2間隔之第5間隔配置。第5間隔可為0.5~20 μm。It can be provided with a plurality of second multi-line parts composed of conductive parts existing in a plurality of second grooves, and two adjacent second multi-line parts are arranged at a second interval in the first direction to form the above-mentioned second multi-line part The plurality of conductive parts are arranged at a fifth interval smaller than the second interval in the first direction. The fifth interval may be 0.5-20 μm.
根據第2形態,提供一種發熱膜之製造方法,其係製造第1形態之發熱膜之方法,其包括如下步驟:準備表面具有第1槽及第2槽之上述透明膜;及向第1槽及第2槽中填充導電性材料而形成上述導電部。According to a second aspect, there is provided a method of manufacturing a heat-generating film, which is a method of manufacturing the heat-generating film of the first aspect, which includes the steps of: preparing the above-mentioned transparent film having a first groove and a second groove on the surface; And the second groove is filled with a conductive material to form the above-mentioned conductive portion.
準備上述透明膜之步驟可包括如下步驟:藉由使用具有與上述導電部對應之凹凸圖案之模子進行壓印,而於上述透明膜上形成第1槽及第2槽。上述透明膜具有透明支持基材及形成於透明支持基材上之透明樹脂層,準備上述透明膜之步驟可包括如下步驟:準備具有與上述導電部對應之凹凸圖案之上述模子;於上述模子之形成有上述凹凸圖案之表面塗佈光硬化性樹脂而形成塗佈層;於上述塗佈層上配置上述透明支持基材;自上述透明支持基材側照射紫外線之光使上述塗佈層硬化,而形成上述透明樹脂層;及自上述透明樹脂層將上述模子剝離。可藉由無電解電鍍而形成上述導電部。 [發明之效果]The step of preparing the transparent film may include the step of forming a first groove and a second groove on the transparent film by imprinting using a mold having a concave-convex pattern corresponding to the conductive portion. The transparent film has a transparent supporting substrate and a transparent resin layer formed on the transparent supporting substrate. The step of preparing the transparent film may include the following steps: preparing the mold having a concave-convex pattern corresponding to the conductive portion; A photocurable resin is applied to the surface on which the uneven pattern is formed to form a coating layer; the transparent supporting substrate is arranged on the coating layer; ultraviolet light is irradiated from the transparent supporting substrate side to harden the coating layer, And forming the above-mentioned transparent resin layer; and peeling the above-mentioned mold from the above-mentioned transparent resin layer. The above-mentioned conductive part can be formed by electroless plating. [Effects of Invention]
本發明之發熱膜可抑制導電部之內部可視及現象,透明性(透過率)高,又,通電時可獲得充分之發熱量。因此,可用作既維持車輛駕駛者之視野及車輛之設計性又可有效率地對車輛之窗、鏡子等進行加熱的發熱膜。又,本發明之發熱膜不易受導電部斷線之影響,耐久性及可靠性高。The heating film of the present invention can suppress the internal visibility and phenomenon of the conductive part, has high transparency (transmittance), and can obtain sufficient heat generation when energized. Therefore, it can be used as a heat generating film that not only maintains the vision of the vehicle driver and the design of the vehicle, but also efficiently heats the windows and mirrors of the vehicle. In addition, the heating film of the present invention is not easily affected by the disconnection of the conductive part, and has high durability and reliability.
以下,參照圖式對本發明之發熱膜及其製造方法之實施方式進行說明。Hereinafter, embodiments of the heat generating film and the manufacturing method thereof of the present invention will be described with reference to the drawings.
[發熱膜]
如圖1(a)所示,本實施方式之發熱膜10具備:透明膜11,其包含透明支持基材33及形成於其上之透明樹脂層12;及導電部13,其形成於透明膜11上。透明樹脂層12具有剖面為矩形之凹部(槽)11c。如圖2所示,凹部11c於透明膜11之表面11s包含於第1方向上延伸之第1槽11A及於與第1方向交叉之第2方向上延伸之第2槽11B。包含第1槽11A及第2槽11B之凹部(槽)11c係形成俯視發熱膜10時呈格子狀之圖案(圖案A)的格子槽。圖案A中,第1方向與第2方向正交。導電部13係向透明膜11之凹部11c內填充導電性材料而成。即,導電部13存在於凹部11c內。導電部13包含填充於第1槽11A之第1導電部13A、及填充於第2槽11B之第2導電部13B。如圖2所示,第1導電部13A及第2導電部13B為格子狀,於透明膜11之表面11a形成格子狀之圖案(圖案A)。再者,於無需區分第1槽11A與第2槽11B時,將其等統一記載為凹部(槽、格子槽)11c。同樣地,於無需區分第1導電部13A與第2導電部13B時,將其等統一記載為導電部13。[Heating film]
As shown in FIG. 1(a), the
<透明膜>
如上所述,透明膜11具有透明支持基材33及積層於其上之透明樹脂層12。<Transparent film>
As described above, the
作為透明樹脂層12,可使用光硬化及熱硬化、濕氣硬化型、化學硬化型(二液混合)等樹脂。具體而言,例如可例舉:環氧系、丙烯酸系、甲基丙烯酸系、乙烯醚系、氧環丁烷系、胺基甲酸酯系、三聚氰胺系、尿素系、聚酯系、聚烯烴系、酚系、交聯型液晶系、氟系、矽酮系、聚醯胺系等單體、低聚物、聚合物等各種樹脂。透明樹脂層12之厚度可為0.5~500 μm、1~400 μm、5~200 μm或2~20 μm之範圍內。若厚度未達上述下限,則形成於透明樹脂層12之凹部11c之深度易變得不充分,若超過上述上限,則擔心硬化時產生之樹脂之體積變化之影響變大。As the
作為透明支持基材33,可利用使可見光透過之公知之膜基材。例如可利用包含玻璃等透明無機材料之基材;包含聚酯(聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯、聚芳酯等)、(甲基)丙烯酸系樹脂(聚甲基丙烯酸甲酯等)、聚碳酸酯、聚氯乙烯、苯乙烯系樹脂(ABS樹脂等)、纖維素系樹脂(三乙醯纖維素等)、聚醯亞胺系樹脂(聚醯亞胺樹脂、聚醯亞胺醯胺樹脂等)、環烯烴聚合物等樹脂之基材等。就可撓性之觀點而言,透明支持基材33可為樹脂膜。就光學特性之觀點而言,透明支持基材33之厚度較佳為1~500 μm、10~300 μm或20~150 μm。於薄於1 μm之情形時,有作為支持基材之功能受損之虞,於厚於500 μm之情形時,有透光性不充分之情形。As the
<導電部>
導電部13藉由通電而發熱。因此,導電部13係發熱膜10之發熱部。如圖1(b)所示,導電部13以填充透明膜11之凹部(槽)11c之方式形成,且未溢出至凹部11c之膜之面內方向之外側。本實施方式中,導電部13之上表面13s(自槽露出之部分)與透明膜11之表面11s之間無階差,兩者位於同一平面內。即,凹部11c之深度D與導電部13之高度H大致相同。又,透明膜11之表面11s意指除透明膜11之凹部11c以外之表面部分。<Conductive part>
The
導電部13之線寬W為0.2~10 μm,較佳為0.5~10 μm、0.7~8 μm、0.9~6 μm或1~5 μm。若導電部13之線寬W超過上述範圍之上限,則導電部13可被視認,產生內部可視及現象,有發熱膜10之透明性(透過率)降低之虞。又,若導電部13之線寬W未達上述範圍之下限,則有導電性變得不充分且發熱量不足之虞。又,導電部13斷線之風險提高,發熱膜10之耐久性及可靠性降低。又,導電部13之線寬W係與導電部13延伸之方向垂直之剖面中之導電部13之寬度之最大值。本實施方式中,第1導電部13A與第2導電部13B具有相同之線寬W。然而,本實施方式並不限定於此,第1導電部13A及第2導電部13B可分別具有不同之線寬W。The line width W of the
導電部13之高度H為0.5~10 μm,較佳為0.7~7 μm、1~5 μm或2~4 μm。若導電部13之高度H超過上述範圍之上限,則難以形成格子圖案。又,若導電部13之高度H未達上述範圍之下限,則有導電性變得不充分且發熱量不足之虞。發熱膜10之耐久性及可靠性降低。再者,導電部13之高度H係指自凹部11c之底至導電部13之表面13s之距離(導電部13之厚度)之最大值。本實施方式中,第1導電部13A與第2導電部13B具有相同之高度H。然而,本實施方式並不限定於此,第1導電部13A及第2導電部13B可分別具有不同之高度H。The height H of the
如圖1(b)所示,導電部13之高度H較佳可為導電部13之線寬W之0.1倍以上、0.1~5倍或0.5~2倍。即,與導電部13之延伸方向垂直之面中之剖面形狀之縱橫比(aspect ratio)較佳可為1:10~5:1或1:2~2:1之範圍內。藉由本實施方式之導電部13之高度H為線寬W之1倍以上,導電部13可具有充分之導電性、發熱性。藉此,發熱膜10可兼具無內部可視及現象之良好外觀及高導電性。又,於導電部13之高度H大於線寬W之5倍之情形時,有斜向觀察發熱膜10時視認性降低之虞。As shown in FIG. 1(b), the height H of the
凹部11c之深度D與導電部13之高度H亦可不相等。例如,如圖3(a)所示,導電部13之高度H亦可較凹部11c之深度D高。即,導電部13亦可存在隆起部13x(較透明膜11之表面11s高之部分)。即使如此,隆起部13x亦不露出至凹部11c之基板面內方向之外側。藉此,可增大導電部13之截面面積,其結果為,可不提高格子圖案中之導電部13之面積比率(被覆率)而使導電部13之電阻值降低。隆起部13x之高度(距表面11s之高度)較佳設為0.5 μm以下。若超過0.5 μm,則導電部之耐磨耗性降低。就耐磨耗性之觀點而言,導電部13之高度H相對於凹部11c之深度D之比(H/D)較佳為1.0<H/D≦1.2、1.0<H/D≦1.15或1.0<H/D≦1.10(其中隆起部13x之高度為0.5 μm以下)。The depth D of the
或者如圖3(b)所示,導電部13亦可較凹部11c之深度低,導電部13部分地填充於凹部11c之內部。藉此,導電部13完全收容於凹部內,故透明膜11表面之耐磨耗性優異,導電部13不易劣化。就確保導電性之觀點而言,導電部13之高度H相對於凹部11c之深度D之比(H/D)較佳為0.1<H/D、0.3≦H/D或0.5≦H/D。Alternatively, as shown in FIG. 3(b), the
本實施方式中,如圖2所示,具有相同線寬W、相同高度H之複數個導電部13(第1導電部13A及第2導電部13B)有規律地呈格子狀交叉,而於透明膜11之表面11s上形成格子圖案(格子狀圖案A)。藉由第1導電部13A及第2導電部13B互相正交,從而導電部13於俯視下均等地分散,藉此,內部可視及現象得以抑制,透明性提昇。又,圖案A具有複數個第1導電部13A與第2導電部13B交叉(正交)之交點R。詳情將於下文中敍述,但由於圖案A具有交點R,故本實施方式之發熱膜10不易受導電部13斷線之影響,耐久性及可靠性高。In this embodiment, as shown in FIG. 2, a plurality of conductive portions 13 (the first
填充於相鄰之2個第1槽11A中之導電部間之間隔、即相鄰之2個第1導電部13A間之第1間隔P1為20~1000 μm,較佳為50~800 μm、80~600 μm或90~500 μm。若第1間隔P1未達上述範圍之下限,則有發熱膜10之透明性(透過率)降低之虞。又,若第1間隔P1超過上述範圍之上限,則有發熱膜10之發熱量不足之虞。又,由於交點R之個數減少,故發熱膜10易受到導電部13斷線之影響,有耐久性及可靠性降低之虞。再者,第1間隔P1係與第1方向垂直之方向上之相鄰之2個第1導電部13A之間之距離(間隔)。於第1方向與第2方向正交之圖案A中,第1間隔P1為第2方向上之距離(間隔)。又,第1間隔P1係與第1方向垂直之方向上之相鄰之2個第1導電部13A對向之邊緣(端部)之間之距離。The interval between the conductive parts filled in the two adjacent
第1方向上之填充至相鄰之2個第2槽11B中之導電部間之間隔、即第1方向上之相鄰之2個第2導電部13B間之第2間隔P2並無特別限制。就使發熱膜10兼具透明性及發熱量之觀點而言,例如可為20~20000 μm、50~15000 μm、80~6000 μm或90~3000 μm。若第2間隔P2為上述範圍,則可實現高透明性(透過率)。又,於圖2所示之圖案A中,第2間隔P2大於(寬於)第1間隔P1,但本實施方式並不限定於此。第1間隔P1與第2間隔P2可相同,亦可不同。但就抑制導電部13內部可視及現象,提高透明性(透過率)之觀點而言,第2間隔P2較佳為大於(寬於)第1間隔P1。再者,第2間隔P2係第1方向上之相鄰之2個第2導電部13B對向之邊緣(端部)之間之距離。The gap between the conductive portions filled in the first direction to the two adjacent
第1間隔P1及第2間隔P2有時與導電部13之線寬W一同對導電部13之內部可視及現象造成影響。雖然依存於導電部13之線寬W之大小,但存在若第1間隔P1及第2間隔P2變小(窄),則導電部13之內部可視及現象會進一步得到抑制之情形。推測其原因在於,人眼無法辨識第1間隔P1及第2間隔P2之大小,導電部13之格子圖案變得更不顯眼。例如,若於導電部13之線寬W為2 μm以下時,第1間隔P1未達300 μm且第2間隔P2為5000 μm以下,則內部可視及現象進一步得到抑制,故較佳。進而,如上所述,若第2間隔P2過窄,則有透明性降低之虞,故第2間隔P2例如較佳為1000以上。因此,為了抑制內部可視及現象,且獲得高透明性,例如,於導電部13之線寬W為2 μm以下時,較佳為第1間隔P1未達300 μm且第2間隔P2為1000~5000 μm以下。The first interval P1 and the second interval P2 together with the line width W of the
格子狀之導電部13中之交點R之個數、即存在於第1槽11A內之第1導電部13A與存在於第2槽11B內之第2導電部13B之交點R之個數為20~2500個/cm2
,較佳為30~2000個/cm2
或50~1500個/cm2
。本實施方式中,於作為發熱部之導電部13發生斷線之情形時,斷線部之周邊無法通電從而無法發熱,發熱膜10之表面11s之一部分無法發揮作為發熱膜之作用。於發熱膜10之表面11s中,將因1個部位之導電部13斷線而無法有助於發熱之面積定義為「斷線影響面積」。於格子圖案中,交點R之個數越多,則斷線影響面積越小。即,交點R之個數越多,則發熱膜10越不易受導電部13斷線之影響,發熱膜10之耐久性及可靠性越高。若格子圖案中之交點R之個數未達上述範圍之下限,則發熱膜10無法獲得充分之耐久性及可靠性。相反,若格子圖案中之交點R之個數超過上述範圍之上限,則有發熱膜10之透明性(透過率)降低之虞。The number of intersections R in the grid-shaped
又,導電部13之面積比率為0.1~10%,較佳為0.2~3%或0.3~1%。若導電部13之面積比率未達上述範圍之下限,則有發熱量不足之虞。若導電部13之面積比率超過上述範圍之上限,則有發熱膜10之透明性(透過率)降低之虞。再者,導電部13之面積比率係指於俯視發熱膜10時發熱膜10之表面形成有格子狀導電部13之區域(形成有格子狀圖案A之區域)中之導電部13之被覆率。In addition, the area ratio of the
作為導電部13之材料,可例舉:鎳、銅、鋅、鉻、鈀、銀、錫、鉛、金、鋁等金屬以及該等金屬之合金或化合物等。就導電性之觀點而言,較佳為鎳、銅、銀、金等金屬以及該等金屬之合金或化合物等,就可撓性之觀點而言,較佳為銀、銅、鎳等金屬或合金。Examples of the material of the
本實施方式之發熱膜10於波長550 nm下之光之透過率較佳可為60~98%、80~95%或85~92%。透過率若為上述範圍內,則發熱膜10具有充分之透明性。The light transmittance of the
本實施方式之發熱膜10之面電阻值較佳可為0.003~70 Ω/sq.、0.05~30 Ω/sq.或0.1~20 Ω/sq.。面電阻值若為該範圍,則發熱膜10於通電時可獲得充分之發熱量。The sheet resistance value of the
本實施方式之發熱膜10之升溫速度較佳可為0.02~0.5℃/sec.、0.03~0.4℃/sec.或0.04~0.3℃/sec.。升溫速度若為該範圍,則發熱膜於通電時可發揮充分之發熱特性。再者,升溫速度例如可利用下述實施例中說明之測定方法及測定條件進行測定。The heating rate of the
發熱膜10為了對導電部13通電而發熱,亦可具備與導電部13之末端連結之引出配線。引出配線可設為與導電部13之上表面13s相同之高度,尤其,導電部13之上表面13s及透明膜11a之表面11s之間無階差,可均位於同一平面內。作為引出配線之材料,可使用與作為導電部13之材料所例示者相同之材料。The
如以上所說明,本實施方式之發熱膜10之第1導電部13A及第2導電部13B之線寬W及高度H、格子圖案中之第1間隔P1、交點之個數及導電部之面積比率為特定之範圍內。藉此,本實施方式之發熱膜10可抑制導電部之內部可視及現象,透明性(透過率)高,又,通電時可獲得充分之發熱量。進而,本實施方式之發熱膜不易受導電部斷線之影響,耐久性及可靠性高。因此,本實施方式之發熱膜10可用作能夠在不使車輛駕駛者之視野及車輛之設計性降低之情況下有效率地對車輛之窗、鏡子等進行加熱之發熱膜。As described above, the line width W and height H of the first
[發熱膜之製造方法]
如圖4之流程圖所示,發熱膜10之製造方法包括如下步驟:準備於表面11s形成有格子槽11c(第1槽11A及第2槽11B)之透明膜11(圖4之步驟S1);及向格子槽11c中填充導電性材料而形成導電部13(第1導電部13A及第2導電部13B)(圖4之步驟S2)。發熱膜10例如可藉由如下方法製造:使用具有與導電部13對應之凹凸圖案之模子,藉由壓印而形成帶凹凸之透明膜11,其次,藉由無電解電鍍向凹部中填充導電構件。以下參照圖5及6對發熱膜10之製造方法之具體例進行說明。[Manufacturing method of heating film]
As shown in the flowchart of FIG. 4, the manufacturing method of the
<模子之準備步驟>
如圖5(a)所示,準備表面以特定間隔形成有剖面形狀為矩形之凸部20a的帶凹凸圖案之模子20。模子之凹凸圖案於俯視下為複數個直線部以特定間隔交叉之格子圖案(參照圖2之圖案A)。凸部20a之高度及寬度以及凸部20a間之間隔設為與上述導電部13之設計尺寸相同。模子20例如可使用介隔特定圖案之光罩對塗佈於矽基板上之光阻劑進行感光及蝕刻之光微影法而製作。較佳為於模子20之表面塗佈用於以下步驟之脫模劑。<Preparation steps of the mould>
As shown in FIG. 5(a), a
<利用壓印所進行之透明膜之製備步驟>
其次,於模子20之形成有凸部20a之表面塗佈如紫外線硬化樹脂之光硬化性樹脂而形成塗佈層22。其次,於塗佈層22上例如配置如PET(Polyethylene,聚乙烯)膜之包含合成樹脂之透明支持基材33,而形成如圖5(b)所示之積層體。其次,自透明支持基材33側向該積層體照射紫外線之光。藉此,使構成塗佈層22之光硬化性樹脂硬化,從而形成透明樹脂層12。其次,如圖5(c)所示,將模子20自積層體之透明樹脂層12剝離,而獲得具備表面上形成有與模子之凸部20a之圖案對應之格子狀凹部(格子槽)11c之透明樹脂層12的透明膜11。<Preparation steps of transparent film by imprinting>
Next, a photocurable resin such as an ultraviolet curable resin is coated on the surface of the
<藉由無電解電鍍所進行之導電部之形成>
以如下方式藉由無電解電鍍於以上述方式所獲得之透明膜11之透明樹脂層12之凹部11c形成導電部13。<Formation of conductive part by electroless plating>
The
(A)鍍覆觸媒基底層之形成(矽烷偶合處理)
於實施無電解電鍍時,為了確保鍍覆膜之牢固之密接性,較佳為於施以鍍覆膜之部位實施矽烷偶合處理。作為此種處理中使用之矽烷偶合劑,例如可使用3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷或N-2(胺基乙基)3-胺基丙基甲基二甲氧基矽烷、3-(N-苯基)胺基丙基三甲氧基矽烷等胺基矽烷化合物或具有其他反應性官能基之矽烷化合物。藉由將此種矽烷偶合劑之溶液塗佈於透明膜11之表面11s,如圖6(a)所示,於透明樹脂層12之包含凹部11c之表面形成基底層28。為了提昇基底層28向透明樹脂層12表面之密接性,可於塗佈基底層形成材料之溶液之後,對透明膜11進行加熱。又,亦可於塗佈基底層形成材料之溶液之前,向透明樹脂層12之表面照射UV(Ultraviolet,紫外線)光而進行透明樹脂層12表面之表面改質。(A) Formation of plating catalyst base layer (silane coupling treatment)
When performing electroless plating, in order to ensure the firm adhesion of the plating film, it is preferable to perform a silane coupling treatment on the part where the plating film is applied. As the silane coupling agent used in this treatment, for example, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, or N-2 (aminoethyl) 3-amino group can be used. Aminosilane compounds such as propylmethyldimethoxysilane and 3-(N-phenyl)aminopropyltrimethoxysilane or silane compounds with other reactive functional groups. By coating the silane coupling agent solution on the
其次,實施如基底層28僅存在於凹部11c之內表面之處理。該處理例如包括僅向除凹部11c之開口部以外之透明樹脂層12之表面上之基底層28照射UV光之步驟。視需要,亦可使用遮斷光之光罩等。其結果為,如圖6(b)所示,可獲得僅凹部11c之內表面存在基底層28之透明膜11。Next, a treatment is performed such that the
(B)鍍覆觸媒之擔載
其次,將僅於以上述方式獲得之凹部11c之內表面存在基底層28之透明膜11浸漬於公知之鍍覆觸媒液中。藉此,獲得僅凹部11c之內部擔載有作為鍍覆觸媒之金屬離子(例如鈀離子)之透明膜(鍍覆用透明膜之前驅物)。作為鍍覆觸媒液,可使用氯化鈀(II)溶液或四氯金(III)酸溶液。進而,藉由對該透明膜進行還原處理,可獲得僅凹部11c之內表面附著有如鈀之鍍覆觸媒之透明膜(鍍覆用透明膜)。(B) Loading of plating catalyst
Next, the
(C)無電解電鍍
最後,將透明膜11(鍍覆用透明膜)浸漬於無電解電鍍液中實施無電解電鍍。藉由無電解電鍍,而僅於凹部11c之內部形成導電性材料。如此一來,可獲得如圖6(c)所示之於凹部11c之內部形成有導電部13之發熱膜10。(C) Electroless plating
Finally, the transparent film 11 (transparent film for plating) is immersed in an electroless plating solution to perform electroless plating. By electroless plating, a conductive material is formed only inside the
<變化例>
上述實施方式中,作為導電部13所形成之格子圖案(格子狀圖案),使用圖2所示之圖案A,但本實施方式並不限定於此。若為俯視下複數個直線部(導電部13)以特定間隔交叉之圖案,則可用作格子圖案。例如,圖案A中,第2間隔P2較第1間隔P1長,故各格子之平面形狀為矩形(長方形),但第1間隔P1與第2間隔P2亦可相等。於該情形時,各格子之平面形狀成為正方形。<Examples of changes>
In the above-mentioned embodiment, the pattern A shown in FIG. 2 is used as the grid pattern (lattice pattern) formed by the
又,圖2所示之圖案A中,第1導電部13A以等間隔之第1間隔P1配置,但本實施方式之格子圖案並不限定於此。本實施方式之格子圖案亦可如圖7(a)所示之圖案D1般,由複數個第1導電部13A構成第1複線部13AW。相鄰之2個第1複線部13AW以第1間隔P1配置。於第1複線部13AW中,複數個第1導電部13A以較第1間隔P1窄之第4間隔P4配置。藉由第1導電部13A構成第1複線部13AW,從而交點R之個數增加,斷線影響面積變小。藉此,使用圖案D1之發熱膜10更不易受導電部13斷線之影響,耐久性及可靠性變得更高。第4間隔P4例如可為0.2~20 μm、0.3~15 μm或0.5~10 μm。圖案D1中,第1複線部13AW由3個(3根)第1導電部13A構成,但本變化例並不限定於此。構成第1複線部13AW之第1導電部13A之個數例如可設為2~10個、2~5個或2~3個。再者,第4間隔P4係與第1方向垂直之方向上之距離,且係第1複線部13AW中之相鄰之2個第1導電部13A對向之邊緣(端部)之間之距離。In the pattern A shown in FIG. 2, the first
本實施方式之格子圖案亦可如圖7(b)所示之圖案D2般,由複數個第2導電部13B構成第2複線部13BW。相鄰之2個第2複線部13BW於第1方向上以第2間隔P2配置。於第2複線部13BW中,複數個第2導電部13B於第1方向上以較第2間隔P2窄之第5間隔P5配置。藉由第2導電部13B構成第2複線部13BW,從而交點R之個數增加,斷線影響面積變小。藉此,使用圖案D2之發熱膜10更不易受導電部13斷線之影響,耐久性及可靠性變得更高。第5間隔P5例如可為0.5~20 μm、0.7~15 μm或1.0~10 μm。圖案D2中,第2複線部13BW由3個(3根)第2導電部13B構成,但本變化例並不限定於此。構成第2複線部13BW之第2導電部13B之個數例如可設為2~10個、2~5個或2~3個。再者,第5間隔P5係第1方向上之距離,且係第2複線部13BW中之相鄰之2個第2導電部13B對向之邊緣(端部)之間之距離。The grid pattern of this embodiment may also be the same as the pattern D2 shown in FIG. 7(b), and the 2nd polyline part 13BW may be comprised by a plurality of second
使用圖案D1(圖7(a))或圖案D2(圖7(b))之發熱膜10中,如上所述,不易受導電部13斷線之影響,因此亦可使導電部13之線寬W縮小(縮窄)。藉由使導電部13之線寬W縮小,發熱膜10之透明性(透過率)進一步提昇,導電部13之內部可視及現象亦可進一步得到抑制。又,即使於導電部13之線寬W小之情形時,第1複線部13AW及第2複線部13BW亦由複數個導電部13(第1導電部13A、第2導電部13B)構成,故發熱膜10可獲得充分之發熱量。於圖案D1及圖案D2中,導電部13之線寬W例如可設為0.2~10 μm,較佳設為0.3~5 μm或0.5~3 μm。In the
本實施方式之格子圖案亦可如圖8所示之圖案E般,第1方向與第2方向不正交。於該情形時,圖案E中之格子形狀成為平行四邊形,圖案E中,藉由使作為第2導電部13B之延伸方向之第2方向朝第1方向接近(傾斜),可緩和施加拉伸等應力時嚮導電配線相交之交叉點部施加之局部應力。The grid pattern of this embodiment may be like the pattern E shown in FIG. 8, and the 1st direction and the 2nd direction may not be orthogonal. In this case, the lattice shape in the pattern E becomes a parallelogram. In the pattern E, by making the second direction which is the extension direction of the second
以上,藉由實施方式對本發明進行了說明,但本發明之發熱膜及其製造方法並不限定於上述實施方式,可於申請專利範圍所記載之技術思想之範圍內進行適當改變。 [實施例]As mentioned above, the present invention has been described through the embodiments, but the heat-generating film and the manufacturing method thereof of the present invention are not limited to the above-mentioned embodiments, and can be appropriately changed within the scope of the technical idea described in the scope of the patent application. [Example]
以下對發熱膜及其製造方法之實施例進行說明,但本發明並不限定於其等。Hereinafter, examples of the heat generating film and its manufacturing method will be described, but the present invention is not limited to them.
[實施例1]
<透明膜之製備步驟>
作為模子20,準備藉由剖面形狀為矩形(高度2 μm、寬1 μm)之線狀凸部而於一表面上形成有圖2所示之格子圖案(圖案A)的Si晶圓(300 mm×300 mm)(參照圖5(a))。於Si晶圓表面中,第2方向上之相鄰之凸部間之間隔(相當於第1間隔P1)設為100 μm,第1方向上之相鄰之凸部之間隔(相當於第2間隔P2)設為5000 μm。再者,凸部間之間隔係指第1方向或第2方向上之相鄰之2個凸部對向之邊緣(端部)之間之距離。藉由在具有凸部之表面形成氟系精密脫模劑之膜(膜厚約30 nm之超薄膜)而實施脫模處理。[Example 1]
<Preparation steps of transparent film>
As the
向實施了脫模處理之模子20表面滴注丙烯酸系UV硬化樹脂(以下視情形簡稱為「UV硬化樹脂」),以厚度13 μm形成包含UV硬化樹脂之塗佈層22。其次,於該塗佈層22上配置厚度100 μm之PET膜(透明支持基材33),製成由模子20與PET膜33夾著包含UV硬化樹脂之塗佈層22(未硬化之透明樹脂層12)的積層體(參照圖5(b))。其次,使用高壓水銀燈自PET膜33側以2000 mJ/cm2
向該積層體照射中心波長為365 nm之UV光,使形成塗佈層22之UV硬化樹脂硬化,而形成透明樹脂層12(厚度10 μm)。其次,將模子20自積層體之透明樹脂層22剝離,而獲得具備透明樹脂層22之透明膜11,該透明樹脂層22於表面形成有來自模子20之凸部之圖案形狀的格子狀凹部(參照圖5(c))。於透明膜11之表面,第2方向上之相鄰之凹部間之間隔(相當於第1間隔P1)為100 μm,第1方向上之相鄰之凹部之間隔(相當於第2間隔P2)為5000 μm。An acrylic UV curable resin (hereinafter referred to as “UV curable resin” as appropriate) is dripped onto the surface of the
<形成鍍覆觸媒基底層之步驟> 以如下方式製備矽烷偶合處理中使用之基底層原料溶液。向200 mL乙醇中添加1 mL之3-胺基丙基三乙氧基矽烷,並攪拌30分鐘,製成3-胺基丙基三乙氧基矽烷溶液(基底層原料溶液)(溶劑:乙醇,3-胺基丙基三乙氧基矽烷之濃度:0.5體積%)。<Steps to form a plating catalyst base layer> The base layer raw material solution used in the silane coupling treatment was prepared in the following manner. Add 1 mL of 3-aminopropyltriethoxysilane to 200 mL of ethanol and stir for 30 minutes to prepare a 3-aminopropyltriethoxysilane solution (base layer raw material solution) (solvent: ethanol , Concentration of 3-aminopropyl triethoxysilane: 0.5% by volume).
以3000 mJ/cm2
向以上述方式獲得之透明膜11之透明樹脂層12側表面之整面照射UV光,預先進行透明樹脂層12表面之表面改質。其次,使用棒式塗佈機,以膜厚(濕膜厚)成為10 μm之方式將基底層原料溶液塗佈於上述表面改質後之透明膜11之透明樹脂層12側之表面。於透明樹脂層12側之表面之整面(包含凹部11c之內表面在內之整面)上形成包含3-胺基丙基三乙氧基矽烷之基底層(包含作為基底層之材料之3-胺基丙基三乙氧基矽烷與透明膜上之羥基之反應物的層)28。其後,於加熱至70℃之烘箱內對透明膜11實施3分鐘加熱處理,以使得包含3-胺基丙基三乙氧基矽烷之層(基底層28)更充分地密接於透明膜11之透明樹脂層12側之表面及凹部11c之內表面。以此方式獲得遍佈透明膜11之透明樹脂層12側之表面及凹部11c之內表面之整面形成有包含3-胺基丙基三乙氧基矽烷之基底層28的透明膜11(參照圖6(a))。The entire surface of the
其次,向形成有基底層28之透明膜11之基底層28側表面之整面照射UV光。藉此,將透明膜11表面及凹部11c之內表面中存在於透明膜11表面附近之基底層28去除。此時,於凹部11c之內表面中除透明膜11表面附近以外之內表面存在基底層。即,獲得僅於透明膜11之凹部11c之內表面選擇性地形成有基底層28之透明膜11(參照圖6(b))。Next, UV light is irradiated to the entire surface of the
<凹部之內部中之觸媒選擇擔載步驟>
作為鍍覆觸媒液,向0.2 g氯化鈀(II)中添加1.0 mL鹽酸,進行加熱使其溶解之後,添加1 L離子交換水,藉此,獲得氯化鈀(II)溶液。其次,藉由在室溫條件下將以上述方式獲得之僅於凹部11c之內表面形成有基底層28之透明膜11浸漬於所獲得之鍍覆觸媒液中10分鐘,而獲得僅於形成於凹部11c之內表面上之基底層28上擔載有鈀離子之鍍覆用透明膜之前驅物。<Steps for selecting and supporting the catalyst in the interior of the recess>
As a plating catalyst solution, 1.0 mL of hydrochloric acid was added to 0.2 g of palladium (II) chloride, heated and dissolved, and then 1 L of ion exchange water was added to obtain a palladium (II) chloride solution. Secondly, by immersing the
利用離子交換水對該鍍覆用透明膜之前驅物進行水洗之後,於室溫條件下於使3.2 g二甲胺硼烷溶解於1 L離子交換水中而獲得之還原用溶液(包含還原劑之處理液)中浸漬10分鐘。以此方式使鍍覆用透明膜之前驅物中之凹部內選擇性地擔載之鈀離子還原成為金屬鈀,藉此獲得於凹部之內部選擇性地擔載有包含金屬鈀之觸媒層之鍍覆用透明膜。After washing the precursor of the transparent film for plating with ion-exchanged water, at room temperature, 3.2 g of dimethylamine borane was dissolved in 1 L of ion-exchanged water to obtain a reduction solution (containing a reducing agent) Soak in the treatment solution for 10 minutes. In this way, the palladium ions selectively carried in the recesses in the transparent film precursor for plating are reduced to metallic palladium, thereby obtaining a catalyst layer containing metal palladium that is selectively supported in the recesses. Transparent film for plating.
<無電解電鍍步驟> 製備如下所述之組成之無電解電鍍液(無電解銅鍍覆液)。 硫酸銅五水合物(以Cu2 + 之形式):0.03 mol/L 甲醛:0.2 mol/L EDTA:0.24 mol/L 聚乙二醇:100 ppm 2,2'-聯吡啶:10 ppm 氫氧化鈉:pH值為12.5~13.2之添加量 其餘:離子交換水<Electroless Plating Step> An electroless plating solution (electroless copper plating solution) of the following composition is prepared. Copper sulfate pentahydrate (in the form of Cu 2 + ): 0.03 mol/L formaldehyde: 0.2 mol/L EDTA: 0.24 mol/L polyethylene glycol: 100 ppm 2,2'-bipyridine: 10 ppm sodium hydroxide :The pH value is 12.5~13.2. The remaining amount: ion exchange water
將鍍覆用透明膜11浸漬於鍍覆浴中之無電解電鍍液中,於溫度:60℃、時間:10分鐘之條件下實施無電解電鍍。其後,利用去離子水進行洗淨並乾燥。僅於鍍覆用透明膜11之凹部11c之內部形成銅鍍覆皮膜。以此方式獲得於凹部11c之內部形成有包含銅之金屬導電層(導電部13)之發熱膜10(參照圖6(c))。再者,導電部之高度H設為與透明膜之凹部之深度D大致相同。The
[實施例2~10] 改變用作模子之Si晶圓上之圖案A之尺寸,除此以外,藉由與實施例1相同之方法製造發熱膜。改變Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表1所示之尺寸之圖案。[Examples 2-10] Except for changing the size of the pattern A on the Si wafer used as the mold, the heat generating film was manufactured by the same method as in Example 1. The spacing between the protrusions in the first direction and/or the second direction of the Si wafer and the cross-sectional shape (height and/or width) of the protrusions were changed to form patterns with the dimensions shown in Table 1 on the transparent film.
[實施例11] 改變用作模子之Si晶圓上之圖案A之尺寸,進而,改變無電解電鍍液而藉由無電解鍍鎳形成導電部,除此以外,藉由與實施例1相同之方法製造發熱膜。改變Si晶圓之第1方向及第2方向上之凸部間之間隔、凸部之剖面形狀(高度及寬度)以於透明膜上形成表1所示之尺寸之圖案。無電解電鍍中,使用以下組成之無電解電鍍液(無電解鍍鎳液,pH值範圍:5.0~5.5)實施無電解電鍍(溫度:50℃、時間:5分鐘)。 硫酸鎳六水合物(以Ni2 + 之形式):0.10 mol/L 乙酸銨:0.40 mol/L 磷酸二氫鈉二水合物:0.20 mol/L 其餘:離子交換水[Example 11] The size of the pattern A on the Si wafer used as the mold was changed, and the electroless plating solution was changed to form the conductive part by electroless nickel plating. Method of manufacturing heating film. The spacing between the protrusions in the first direction and the second direction of the Si wafer and the cross-sectional shape (height and width) of the protrusions were changed to form a pattern with the dimensions shown in Table 1 on the transparent film. In electroless plating, an electroless plating solution with the following composition (electroless nickel plating solution, pH range: 5.0-5.5) is used for electroless plating (temperature: 50°C, time: 5 minutes). Nickel sulfate hexahydrate (in the form of Ni 2 + ): 0.10 mol/L Ammonium acetate: 0.40 mol/L Sodium dihydrogen phosphate dihydrate: 0.20 mol/L The rest: ion exchange water
[實施例12]
使用藉由剖面形狀為矩形之線狀凸部而於一表面上形成有圖7(a)所示之圖案D1的Si晶圓(300 mm×300 mm)作為模子,除此以外,藉由與實施例1相同之方法製造發熱膜。調整Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表2所示之尺寸之圖案。又,於圖案D1中,構成第1複線部13AW之第1導電部13A之個數設為3個(3根),第4間隔P4設為10 μm。[Example 12]
A Si wafer (300 mm×300 mm) with the pattern D1 shown in Fig. 7(a) formed on one surface by linear convex portions with a rectangular cross-sectional shape was used as a mold. In addition, by and The heating film was produced in the same way as in Example 1. Adjust the spacing between the protrusions in the first direction and/or the second direction of the Si wafer, and the cross-sectional shape (height and/or width) of the protrusions to form a pattern of the size shown in Table 2 on the transparent film. In the pattern D1, the number of the first
[實施例13]
使用藉由剖面形狀為矩形之線狀凸部而於一表面上形成有圖7(b)所示之圖案D2的Si晶圓(300 mm×300 mm)作為模子,除此以外,藉由與實施例1相同之方法製造發熱膜。調整Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表2所示之尺寸之圖案。又,於圖案D2中,構成第2複線部13BW之第2導電部13B之個數設為3個(根),第5間隔P5設為10 μm。[Example 13]
A Si wafer (300 mm×300 mm) with the pattern D2 shown in Fig. 7(b) formed on one surface by linear convex portions with a rectangular cross-sectional shape was used as a mold. In addition, by and The heating film was produced in the same way as in Example 1. Adjust the spacing between the protrusions in the first direction and/or the second direction of the Si wafer, and the cross-sectional shape (height and/or width) of the protrusions to form a pattern of the size shown in Table 2 on the transparent film. Furthermore, in the pattern D2, the number of the second
[實施例14及15] 改變用作模子之Si晶圓上之圖案A之尺寸,除此以外,藉由與實施例1相同之方法製造發熱膜。改變Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表2所示之尺寸之圖案。[Examples 14 and 15] Except for changing the size of the pattern A on the Si wafer used as the mold, the heat generating film was manufactured by the same method as in Example 1. The spacing between the protrusions in the first direction and/or the second direction of the Si wafer, and the cross-sectional shape (height and/or width) of the protrusions were changed to form patterns with the dimensions shown in Table 2 on the transparent film.
[實施例16]
使用藉由剖面形狀為矩形之線狀凸部而於一表面上形成有圖7(a)所示之圖案D1的Si晶圓(300 mm×300 mm)作為模子,除此以外,藉由與實施例1相同之方法製造發熱膜。調整Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表2所示之尺寸之圖案。又,於圖案D1中,構成第1複線部13AW之第1導電部13A之個數設為10個(10根),第4間隔P4設為2 μm。[Example 16]
A Si wafer (300 mm×300 mm) with the pattern D1 shown in Fig. 7(a) formed on one surface by linear convex portions with a rectangular cross-sectional shape was used as a mold. In addition, by and The heating film was produced in the same way as in Example 1. Adjust the spacing between the protrusions in the first direction and/or the second direction of the Si wafer, and the cross-sectional shape (height and/or width) of the protrusions to form a pattern of the size shown in Table 2 on the transparent film. In addition, in the pattern D1, the number of the first
[比較例1及2] 改變用作模子之Si晶圓上之圖案A之尺寸,除此以外,藉由與實施例1相同之方法製造發熱膜。改變Si晶圓之第1方向及/或第2方向上之凸部間之間隔、凸部之剖面形狀(高度及/或寬度)以於透明膜上形成表3所示之尺寸之圖案。[Comparative Examples 1 and 2] Except for changing the size of the pattern A on the Si wafer used as the mold, the heat generating film was manufactured by the same method as in Example 1. The spacing between the protrusions in the first direction and/or the second direction of the Si wafer, and the cross-sectional shape (height and/or width) of the protrusions were changed to form patterns with the dimensions shown in Table 3 on the transparent film.
[比較例3及4] 使用藉由剖面形狀為矩形之線狀凸部而於一表面上形成有圖9所示之圖案F的Si晶圓(300 mm×300 mm)作為模子,除此以外,藉由與實施例1相同之方法製造發熱膜。圖案F係所謂線/間隔(L/S)圖案,以表3所示之間隔(第1間隔P1)配置有於第1方向上延伸且具有表3所示之線寬及高度之線(導電部)。[Comparative Examples 3 and 4] A Si wafer (300 mm×300 mm) with the pattern F shown in FIG. 9 formed on one surface by linear convex portions with a rectangular cross-sectional shape was used as a mold. The same method is used to manufacture the heating film. The pattern F is a so-called line/space (L/S) pattern. Lines (conductive Department).
針對實施例1~16及比較例1~4中獲得之發熱膜,測定導電部之線寬W及高度H、第1導電部間之第1間隔P1、第2導電部間之第2間隔P2。又,計算導電部所形成之各圖案中之導電部之面積比率、交點之個數及斷線影響面積。將結果示於表1~3。For the heating films obtained in Examples 1 to 16 and Comparative Examples 1 to 4, the line width W and height H of the conductive parts, the first interval P1 between the first conductive parts, and the second interval P2 between the second conductive parts were measured. . Also, calculate the area ratio of the conductive parts in each pattern formed by the conductive parts, the number of intersections, and the area affected by the disconnection. The results are shown in Tables 1 to 3.
[發熱膜之特性評估] <電特性評估試驗> 使用實施例1~16及比較例1~4中獲得之發熱膜,使用電阻評估裝置(三菱化學Analytech公司製造之商品名「Loresta-GX」)並利用四探針法對形成有導電部之表面側之電特性進行測量,求出面電阻值。將以此方式求出之面電阻值示於表1~3。[Characteristic evaluation of heating film] <Electrical characteristic evaluation test> Using the heating films obtained in Examples 1 to 16 and Comparative Examples 1 to 4, a resistance evaluation device (trade name "Loresta-GX" manufactured by Mitsubishi Chemical Analytech) was used and the surface on which the conductive part was formed was measured by the four-point probe method. The electrical characteristics of the side are measured, and the surface resistance value is obtained. The surface resistance values obtained in this way are shown in Tables 1 to 3.
<透明性評估試驗> 針對實施例1~16及比較例1~4中獲得之發熱膜,以如下方式對透明性進行評估。使用分光光度計(日立高新技術公司製造之商品名「日立分光光度計U-4100」)向各發熱膜照射波長550 nm之光並測定透過率。將測定結果示於表1及2。<Transparency evaluation test> Regarding the heat generating films obtained in Examples 1 to 16 and Comparative Examples 1 to 4, transparency was evaluated in the following manner. A spectrophotometer (trade name "Hitachi Spectrophotometer U-4100" manufactured by Hitachi High-Technologies Corporation) was used to irradiate each heating film with light with a wavelength of 550 nm and the transmittance was measured. The measurement results are shown in Tables 1 and 2.
<內部可視及現象評估試驗> 針對實施例1~16及比較例1~4中獲得之發熱膜,於400 lux之螢光燈環境下以目視檢查發熱膜之外觀,並按以下基準對配線之內部可視及現象進行評估。將測定結果示於表1~3。<Internal visibility and phenomenon evaluation test> Regarding the heating film obtained in Examples 1-16 and Comparative Examples 1 to 4, the appearance of the heating film was visually inspected under a 400 lux fluorescent lamp environment, and the internal visibility and phenomenon of the wiring were evaluated according to the following criteria. The measurement results are shown in Tables 1 to 3.
<內部可視及現象之評估基準> ◎:自距離30 cm之正面及斜向觀察均無法視認到配線 〇:自距離30 cm之正面觀察無法視認到配線,但斜向觀察可視認到配線 △:自距離30 cm之正面觀察可清晰地視認到配線 ×:自距離50 cm之正面觀察可清晰地視認到配線<Assessment criteria for internal visibility and phenomena> ◎: The wiring cannot be seen from the front and oblique observation at a distance of 30 cm ○: The wiring cannot be seen when viewed from the front at a distance of 30 cm, but the wiring can be seen when viewed obliquely △: The wiring can be clearly seen when viewed from the front at a distance of 30 cm ×: The wiring can be clearly seen when viewed from the front at a distance of 50 cm
[表1]
[表2]
[表3]
實施例1~16之發熱膜之導電部之內部可視及現象得以抑制,透過率(透明性)高。又,可知面電阻值處於特定範圍內(0.003~70 Ω/sq.),故通電時可獲得充分之發熱量。又,可知交點之個數為特定範圍內(20~2500個/cm2 ),故不易受導電部斷線之影響,耐久性及可靠性高。The internal visibility and phenomenon of the conductive part of the heating film of Examples 1 to 16 were suppressed, and the transmittance (transparency) was high. In addition, it can be seen that the surface resistance value is within a specific range (0.003 to 70 Ω/sq.), so sufficient heat generation can be obtained when energized. In addition, it can be seen that the number of intersections is within a specific range (20 to 2500/cm 2 ), so it is not easily affected by the disconnection of the conductive part, and the durability and reliability are high.
又,線寬略大為7 μm之實施例10之發熱膜與線寬為1~3 μm之其他實施例相比,導電部之內部可視及現象略微顯眼(內部可視及現象評估結果:△)。又,將使用相同之圖案A作為格子圖案之實施例1~11、14及15進行比較。導電部之線寬W為2 μm以下,第1間隔P1未達300 μm,且第2間隔P2為1000~5000 μm以下之實施例1、3、6及7之導電部之內部可視及現象進一步得到抑制(內部可視及現象評估結果:◎),且透過率亦較高。In addition, in the heating film of Example 10 with a line width slightly larger than 7 μm, compared with other examples with a line width of 1 to 3 μm, the internal visibility and phenomenon of the conductive part are slightly conspicuous (internal visibility and phenomenon evaluation result: △) . In addition, Examples 1 to 11, 14 and 15 using the same pattern A as the grid pattern are compared. The line width W of the conductive part is less than 2 μm, the first interval P1 is less than 300 μm, and the second interval P2 is less than 1000-5000 μm. The internal visibility and phenomenon of the conductive parts of Examples 1, 3, 6, and 7 are further It is suppressed (internal visibility and phenomenon evaluation result: ◎), and the transmittance is also high.
另一方面,比較例1之第1間隔P1為1498 μm,較大,且交點數為13個/cm2 ,較少,故斷線影響面積大,為7.5 mm2 。根據該結果可知,比較例1之發熱膜易受導電部斷線之影響,耐久性及可靠性低。比較例2之導電部之線寬為15 μm,較大,故內部可視及現象顯著(內部可視及現象評估結果:×)。比較例3之線寬為55 μm,較大,又,為L/S圖案(圖案F),故不具有交點,斷線影響面積大,為728 mm2 。因此,可知比較例3之發熱膜之內部可視及現象顯著(內部可視及現象評估結果:×),又,易受導電部斷線之影響,耐久性及可靠性低。又,可知比較例4雖然為L/S圖案,但因線寬細,故可抑制內部可視及現象(內部可視及現象評估:◎),不具有交點,且斷線影響面積大,為15 mm2 ,故易受導電部斷線之影響,耐久性及可靠性低。On the other hand, the first interval P1 of Comparative Example 1 is 1498 μm, which is relatively large, and the number of intersections is 13 points/cm 2 , which is relatively small. Therefore, the area affected by the disconnection is large, which is 7.5 mm 2 . From this result, it can be seen that the heating film of Comparative Example 1 is easily affected by the disconnection of the conductive portion, and has low durability and reliability. The line width of the conductive part of Comparative Example 2 is 15 μm, which is relatively large, so the internal visibility and phenomenon are significant (internal visibility and phenomenon evaluation result: ×). The line width of Comparative Example 3 is 55 μm, which is relatively large and has an L/S pattern (pattern F), so there is no intersection, and the area affected by the disconnection is large, 728 mm 2 . Therefore, it can be seen that the internal visibility and phenomenon of the heating film of Comparative Example 3 are significant (internal visibility and phenomenon evaluation result: ×), and it is easily affected by the disconnection of the conductive part, and has low durability and reliability. In addition, it can be seen that although Comparative Example 4 has an L/S pattern, the line width is thin, so internal visibility and phenomenon can be suppressed (internal visibility and phenomenon evaluation: ◎), there is no intersection, and the area affected by the disconnection is large, 15 mm 2. Therefore, it is easily affected by the disconnection of the conductive part, and the durability and reliability are low.
<發熱特性試驗> 針對實施例6、7及比較例4中獲得之發熱膜,藉由以下方法測定升溫速度。藉由銀膏於剪切成10 cm見方之發熱膜(試樣)之端部表面形成10 cm長之線狀電極作為用以於第1方向上流通電流之連接電極。藉此,連接電極隔開約10 cm之間隔配置。將發熱膜(試樣)投入至-10℃之恆溫槽之中,向連接電極之間施加40秒5 V之電壓。藉由安裝於樣品之熱電偶測定電壓施加前後之樣品之溫度。以發熱膜之電壓施加前後之溫度差(上升溫度)除以施加時間40秒,獲得之值為發熱膜之升溫速度。<heating characteristic test> Regarding the heat generating films obtained in Examples 6, 7 and Comparative Example 4, the heating rate was measured by the following method. A 10 cm long linear electrode was formed on the end surface of the heating film (sample) cut into 10 cm square by silver paste as a connecting electrode for current flow in the first direction. In this way, the connecting electrodes are arranged at intervals of about 10 cm. Put the heating film (sample) into a constant temperature bath at -10°C, and apply a voltage of 5 V between the connecting electrodes for 40 seconds. The temperature of the sample before and after the voltage is applied is measured by the thermocouple installed in the sample. The temperature difference (rising temperature) before and after the voltage application of the heating film is divided by the application time of 40 seconds, and the value obtained is the heating rate of the heating film.
實施例6之發熱膜之升溫速度為0.07℃/sec.,實施例7之發熱膜之升溫速度為0.04℃/sec.。該等值係作為發熱膜充分之升溫速度,可確認實施例5及7之發熱膜具有充分之發熱特性。The heating rate of the heating film of Example 6 was 0.07°C/sec., and the heating rate of the heating film of Example 7 was 0.04°C/sec. These values are the sufficient heating rate of the heating film, and it can be confirmed that the heating films of Examples 5 and 7 have sufficient heating characteristics.
另一方面,比較例4中獲得之發熱膜於試驗中途導電部發生斷線,無法測定升溫速度。 [產業上之可利用性]On the other hand, in the heating film obtained in Comparative Example 4, the conductive part was disconnected in the middle of the test, and the temperature increase rate could not be measured. [Industrial availability]
本發明之發熱膜可抑制導電部之內部可視及現象,透明性(透過率)高,又,通電時可獲得充分之發熱量。因此,可用作能夠在不使車輛駕駛者之視野及車輛之設計性降低之情況下有效率地對車輛之窗、鏡子等進行加熱之發熱膜。The heating film of the present invention can suppress the internal visibility and phenomenon of the conductive part, has high transparency (transmittance), and can obtain sufficient heat generation when energized. Therefore, it can be used as a heat-generating film that can efficiently heat the windows, mirrors, etc. of the vehicle without reducing the visual field of the vehicle driver and the design of the vehicle.
10:發熱膜
11:透明膜
11A:第1槽
11B:第2槽
11c:凹部(槽)
11s:透明膜表面
12:透明樹脂層
13:導電部
13A:第1導電部
13AW:第1複線部
13B:第2導電部
13BW:第2複線部
13s:導電部之上表面
13x:隆起部
20:模子
20a:模子凸部
22:塗佈層
28:基底層
33:透明支持基材
D:凹部之深度
H:導電部之高度
P1:第1間隔
P2:第2間隔
P4:第4間隔
P5:第5間隔
R:交點
W:導電部之線寬10: Heating film
11:
圖1(a)係概念性地表示實施方式之發熱膜之剖面結構之圖,圖1(b)係表示圖1(a)所示之導電部附近之剖面結構之放大圖。 圖2係概念性地表示實施方式之發熱膜且形成有格子圖案(圖案A)之平面之圖。 圖3(a)係表示導電部自發熱膜表面突出之另一實施方式之圖,圖3(b)係表示導電部部分地填充至凹部之另一實施方式之圖。 圖4係對實施方式之發熱膜之製造方法進行說明之流程圖。 圖5(a)~(c)係概念性地表示發熱膜之製造方法中製造透明膜之步驟之圖,上述透明膜具備表面形成有格子狀凹部之透明樹脂層。 圖6(a)~(c)係概念性地表示發熱膜之製造方法中無電解電鍍所需之步驟之圖。 圖7(a)係概念性地表示形成有格子圖案(圖案D1)之另一實施方式之發熱膜之平面的圖,圖7(b)係概念性地表示形成有格子圖案(圖案D2)之另一實施方式之發熱膜之平面的圖。 圖8係概念性地表示形成有格子圖案(圖案E)之另一實施方式之發熱膜之平面的圖。 圖9係概念性地表示形成有線/間隔(L/S)之圖案F之先前之發熱膜之平面的圖。Fig. 1(a) is a view conceptually showing the cross-sectional structure of the heating film of the embodiment, and Fig. 1(b) is an enlarged view showing the cross-sectional structure near the conductive portion shown in Fig. 1(a). Fig. 2 is a diagram conceptually showing a plane of the heat generating film of the embodiment on which a grid pattern (pattern A) is formed. Fig. 3(a) is a diagram showing another embodiment in which the conductive portion protrudes from the surface of the heating film, and Fig. 3(b) is a diagram showing another embodiment in which the conductive portion is partially filled in the recess. Fig. 4 is a flow chart explaining the method of manufacturing the heating film of the embodiment. 5(a) to (c) are diagrams conceptually showing the steps of manufacturing a transparent film in a method of manufacturing a heat generating film. The transparent film is provided with a transparent resin layer with lattice-shaped recesses formed on the surface. Figures 6(a) to (c) are diagrams conceptually showing the steps required for electroless plating in the manufacturing method of the heating film. Fig. 7(a) is a diagram conceptually showing the plane of the heating film of another embodiment formed with a grid pattern (pattern D1), and Fig. 7(b) is a conceptual diagram showing a plane with a grid pattern (pattern D2) formed A plan view of the heating film of another embodiment. Fig. 8 is a view conceptually showing a plane of a heat generating film of another embodiment in which a grid pattern (pattern E) is formed. FIG. 9 is a diagram conceptually showing the plane of the previous heating film in which the line/space (L/S) pattern F is formed.
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020-018819 | 2020-02-06 | ||
JP2020018819A JP2021125395A (en) | 2020-02-06 | 2020-02-06 | Heat-generating film, and method for manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202137811A true TW202137811A (en) | 2021-10-01 |
Family
ID=77200211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110104370A TW202137811A (en) | 2020-02-06 | 2021-02-05 | Heat-generating film and method for manufacturing heat-generating film |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2021125395A (en) |
TW (1) | TW202137811A (en) |
WO (1) | WO2021157532A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114550980A (en) * | 2022-03-08 | 2022-05-27 | 苏州兴派丽智能科技有限公司 | Conductive film, preparation method thereof and display device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3463898B2 (en) * | 1995-02-06 | 2003-11-05 | 新日本石油株式会社 | Heating element and network structure for heating element |
JP2015020723A (en) * | 2013-07-23 | 2015-02-02 | 大日本印刷株式会社 | Glass device for vehicle |
JP2017010679A (en) * | 2015-06-18 | 2017-01-12 | 大日本印刷株式会社 | Windows with transparent heating plate and transparent heating plate |
JP6726576B2 (en) * | 2016-09-09 | 2020-07-22 | リンテック株式会社 | Ice and snow adhesion prevention sheet |
JP6951674B2 (en) * | 2016-09-28 | 2021-10-20 | 大日本印刷株式会社 | Heat-generating conductors, sheets with conductors, heat-generating plates and vehicles |
-
2020
- 2020-02-06 JP JP2020018819A patent/JP2021125395A/en active Pending
-
2021
- 2021-02-01 WO PCT/JP2021/003560 patent/WO2021157532A1/en active Application Filing
- 2021-02-05 TW TW110104370A patent/TW202137811A/en unknown
Also Published As
Publication number | Publication date |
---|---|
JP2021125395A (en) | 2021-08-30 |
WO2021157532A1 (en) | 2021-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20220185238A1 (en) | Heating plate, conductive pattern sheet, vehicle, and method of manufacturing heating plate | |
US20210307122A1 (en) | Heating electrode device, electrical heating glass, heat-generating plate, vehicle, window for building, sheet with conductor, conductive pattern sheet, conductive heat-generating body, laminated glass, and manufacturing method for conductive heat-generating body | |
JP5677338B2 (en) | Heating element and method for manufacturing the same | |
EP2278850B1 (en) | Conductive film, and transparent heating element | |
WO2009142150A1 (en) | Conductive film and transparent heating element | |
JP2011515808A (en) | Heating element and method for manufacturing the same | |
JP6686799B2 (en) | Vehicle glass device and method for manufacturing heating electrode sheet used in the device | |
US10912155B2 (en) | Heating plate, conductive pattern sheet, vehicle, and method of manufacturing heating plate | |
JP6858480B2 (en) | Laminated glass and conductive heating element | |
JP6840452B2 (en) | Laminated glass and conductive heating element | |
TW201911983A (en) | Conductive substrate, electronic device and display device | |
JPWO2020149113A1 (en) | Transparent conductive film | |
TW202137811A (en) | Heat-generating film and method for manufacturing heat-generating film | |
JP2015020723A (en) | Glass device for vehicle | |
JP2016143538A (en) | Mesh-like conductor, sheet with conductor including mesh-like conductor, and heating plate including mesh-like conductor | |
JP2016102055A (en) | Glass laminate, pattern sheet and manufacturing method of glass laminate | |
WO2021200434A1 (en) | Transparent electrically conductive film, and method for manufacturing transparent electrically conductive film | |
JP6930583B2 (en) | Laminated glass and conductive heating element | |
JP6597574B2 (en) | Transparent heating plate, vehicle and building windows | |
WO2013024767A1 (en) | Method for manufacturing wiring pattern, and member for plating | |
JP6501154B2 (en) | Photomask and method of manufacturing conductive pattern | |
JP2021037630A (en) | Conductive laminate and method for manufacturing the same | |
JP2021077577A (en) | Film heater and film heater system | |
KR20160074345A (en) | Heating element and method for preparing the same |