TW202136531A - Composite copper wiring line and multilayer body having resist layer - Google Patents

Composite copper wiring line and multilayer body having resist layer Download PDF

Info

Publication number
TW202136531A
TW202136531A TW110110405A TW110110405A TW202136531A TW 202136531 A TW202136531 A TW 202136531A TW 110110405 A TW110110405 A TW 110110405A TW 110110405 A TW110110405 A TW 110110405A TW 202136531 A TW202136531 A TW 202136531A
Authority
TW
Taiwan
Prior art keywords
layer
copper
plating layer
laminate
manufacturing
Prior art date
Application number
TW110110405A
Other languages
Chinese (zh)
Inventor
佐藤牧子
寺木慎
Original Assignee
日商納美仕有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商納美仕有限公司 filed Critical 日商納美仕有限公司
Publication of TW202136531A publication Critical patent/TW202136531A/en

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/02Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/18Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00Metals, their alloys or their compounds
    • B32B2311/24Aluminium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The purpose of the present invention is to provide: a novel composite copper wiring line; and a multilayer body having a resist layer, said multilayer body being used for the production of a composite copper wiring line. The present invention provides a composite copper wiring line wherein a copper wiring line, which has a first surface, a second surface and a third surface, has a layer containing a first copper oxide on the first surface, while being provided with a first plating layer that contains a metal other than copper on the surface of the layer containing the first copper oxide.

Description

複合銅佈線及具有光阻層之積層體Composite copper wiring and laminate with photoresist layer

本發明係關於一種複合銅佈線及具有光阻層之積層體。The present invention relates to a composite copper wiring and a laminate with a photoresist layer.

半導體積體電路等之製造中,在將作為導電體的銅等熱壓接於樹脂來製作之印刷基板上,1)積層包含感光材料之光阻材料,2)選擇性地照射光等能量線來進行曝光處理後,3)藉由顯影處理在基板上得到遮罩圖案(亦稱為光阻圖案),4)將此圖案作為遮罩,蝕刻導電體而形成電路。光阻材料分成正型光阻材料及負型光阻材料,正型光阻材料係受到光照射的部位藉由顯影處理被去除,相反地,負型光阻材料係受到光照射的部位藉由顯影處理殘留。近年來隨著半導體積體電路的高積體化、微細化之必要性,遮罩圖案亦被要求更複雜的圖案。In the manufacture of semiconductor integrated circuits, etc., in the thermal compression bonding of copper as a conductor to a resin printed circuit board, 1) laminate a photoresist material containing photosensitive material, 2) selectively irradiate energy rays such as light After the exposure process is performed, 3) a mask pattern (also called a photoresist pattern) is obtained on the substrate by a development process, 4) the pattern is used as a mask, and the conductor is etched to form a circuit. Photoresist materials are divided into positive type photoresist materials and negative type photoresist materials. The positive type photoresist material is removed by the development process where the light is irradiated. On the contrary, the negative type photoresist material is removed by the light irradiation part. The development process remains. In recent years, with the need for higher integration and miniaturization of semiconductor integrated circuits, more complex patterns have also been required for mask patterns.

隨著遮罩圖案變得複雜,曝光光線從印刷基板反射變成問題。其反射光產生光暈,使遮罩圖案扭曲、不均。因此,為了抑制反射光,已知有在印刷基板上設置防止曝光光線反射的膜(日本特開平7-86127號公報)。As the mask pattern becomes complicated, the reflection of exposure light from the printed substrate becomes a problem. The reflected light produces a halo, which causes the mask pattern to be distorted and uneven. Therefore, in order to suppress reflected light, it is known to provide a film to prevent reflection of exposure light on a printed circuit board (Japanese Patent Application Laid-Open No. 7-86127).

又,亦已知將構成印刷基板之導電體的銅表面進行氧化處理而黑化,藉此抑制曝光光線反射(日本特表2016-119396號公報)。In addition, it is also known that the copper surface of the conductor constituting the printed circuit board is oxidized and blackened, thereby suppressing the reflection of exposure light (Japanese Patent Application Publication No. 2016-119396).

本發明提供新穎的具有光阻層之積層體及其製造方法,以及包含使用具有光阻層之積層體所製造之複合銅佈線的印刷基板及其製造方法。The present invention provides a novel laminate having a photoresist layer and a manufacturing method thereof, and a printed circuit board including a composite copper wiring manufactured using the laminate having a photoresist layer, and a manufacturing method thereof.

本發明人等致力研究的結果,發現了在包含氧化處理而黑化之銅氧化物之層上特意將銅以外之金屬積層,亦成功抑制明度,可製作適合形成電路之積層體。此外,亦新發現了在形成電路時被去除之包含銅氧化物之層維持保留的狀態下,可製作能承受作為電子電路使用且可導通之複合銅佈線。As a result of their intensive research, the inventors have discovered that deliberately laminating metals other than copper on a layer containing copper oxide blackened by oxidation treatment has successfully suppressed brightness and can produce a laminate suitable for circuit formation. In addition, it has been newly discovered that while the copper oxide-containing layer removed during circuit formation remains in the state, it is possible to fabricate composite copper wiring that can withstand use as an electronic circuit and can be turned on.

本發明具有以下的實施態樣: [A1]一種積層體,具有結構體,該結構體的第一表面及第二表面係由銅構成之面,該結構體的該第一表面的一部分或全部具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第一鍍敷層,且該第一鍍敷層的一部分或全部的表面具有光阻層。 [A2]如[A1]之積層體,其中,形成有該第一鍍敷層之表面的明度L* 之值為未滿50。 [A3]如[A1]或[A2]之積層體,其中,於225℃熱處理30分鐘時,在熱處理前後所比較的形成有該第一鍍敷層之表面的顏色變化為10以下。 [A4]如[A1]至[A3]中任一項之積層體,其中,形成有該第一鍍敷層之表面的具有該光阻層之該一部分或全部的Rz為0.2μm以上且1.0μm以下。 [A5]如[A1]至[A4]中任一項之積層體,其中,形成有該第一鍍敷層之表面的具有該光阻層之該一部分或全部的RSm為600nm以下。 [A6]如[A1]至[A5]中任一項之積層體,其中,該第一鍍敷層包含鎳。 [A7]如[A1]至[A6]中任一項之積層體,其中,該第一鍍敷層的平均厚度為30nm以上且70nm以下。 [A8]如[A1]至[A7]中任一項之積層體,其中,該光阻層為乾膜光阻、正型液狀光阻或負型液狀光阻。 [A9]如[A1]至[A8]中任一項之積層體,其中,該結構體為一片銅箔。 [A10]如[A9]之積層體,其中,該第二表面的一部分或全部具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第二鍍敷層。 [A11]如[A10]之積層體,其中,該第二鍍敷層之表面的一部分或全部具有樹脂基材。 [A12]如[A11]之積層體,其中,該樹脂基材與該第二鍍敷層之間的剝離強度為0.5kgf/cm以上。 [A13]如[A11]或[A12]之積層體,其中,該樹脂基材含有選自聚苯醚、環氧樹脂、聚氧二甲苯、聚苯噁唑、聚四氟乙烯、液晶聚合物、亞磷酸三苯酯、氟樹脂、聚醚醯亞胺、聚醚醚酮、聚環烯烴、雙馬來醯亞胺樹脂、低電容率聚醯亞胺及氰酸樹脂所組成之群組中的至少一種絕緣性樹脂。 [A14]如[A1]至[A8]中任一項之積層體,其中,該結構體為貼銅層合板。The present invention has the following implementation aspects: [A1] A laminate having a structure, the first surface and the second surface of the structure are surfaces made of copper, and a part or all of the first surface of the structure There is a first copper oxide-containing layer, a part or all of the surface of the first copper oxide-containing layer is formed with a first plating layer containing a metal other than copper, and a part or all of the first plating layer The surface has a photoresist layer. [A2] The layered body as in [A1], wherein the value of the lightness L* of the surface on which the first plating layer is formed is less than 50. [A3] A laminate such as [A1] or [A2], wherein the color change of the surface on which the first plating layer is formed before and after the heat treatment is 10 or less when heat-treated at 225°C for 30 minutes. [A4] The laminate of any one of [A1] to [A3], wherein the Rz of the part or all of the photoresist layer on the surface on which the first plating layer is formed is 0.2 μm or more and 1.0 Below μm. [A5] The laminate according to any one of [A1] to [A4], wherein the RSm of the part or all of the photoresist layer on the surface on which the first plating layer is formed is 600 nm or less. [A6] The laminate according to any one of [A1] to [A5], wherein the first plating layer contains nickel. [A7] The laminate according to any one of [A1] to [A6], wherein the average thickness of the first plating layer is 30 nm or more and 70 nm or less. [A8] The laminated body as in any one of [A1] to [A7], wherein the photoresist layer is a dry film photoresist, a positive liquid photoresist or a negative liquid photoresist. [A9] A laminate as in any one of [A1] to [A8], wherein the structure is a piece of copper foil. [A10] The laminate as [A9], wherein a part or all of the second surface has a second copper oxide-containing layer, and a part or all of the surface of the second copper oxide-containing layer is formed with copper The second plating layer of other metals. [A11] The layered body as in [A10], in which a part or all of the surface of the second plating layer has a resin substrate. [A12] The laminate of [A11], wherein the peel strength between the resin base material and the second plating layer is 0.5 kgf/cm or more. [A13] A laminate such as [A11] or [A12], wherein the resin substrate contains selected from polyphenylene ether, epoxy resin, polyoxyxylene, polybenzoxazole, polytetrafluoroethylene, liquid crystal polymer , Triphenyl phosphite, fluororesin, polyetherimide, polyetheretherketone, polycyclic olefin, bismaleimide resin, low permittivity polyimide and cyanate resin At least one insulating resin. [A14] A laminate as in any one of [A1] to [A8], wherein the structure is a copper-clad laminate.

[B1]一種積層體的製造方法,係對結構體進行,該結構體具有由銅構成之第一表面及第二表面,該第一表面的一部分或全部具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第一鍍敷層,該積層體的製造方法係包含對於該結構體在該第一鍍敷層的一部分或全部的表面形成光阻層的步驟。 [B2]如[B1]之製造方法,其中,形成有該第一鍍敷層之表面的明度L* 之值為未滿50。 [B3]如[B1]或[B2]之製造方法,其中,於225℃熱處理30分鐘時,在熱處理前後所比較的形成有該第一鍍敷層之表面的顏色變化為10以下。 [B4]如[B1]至[B3]中任一項之製造方法,其中,該第一鍍敷層包含鎳。 [B5]如[B1]至[B4]中任一項之製造方法,其中,該第一鍍敷層的平均厚度為30nm以上且70nm以下。 [B6]如[B1]至[B5]中任一項之製造方法,其中,該光阻層為乾膜光阻、正型液狀光阻或負型液狀光阻。 [B7]如[B1]至[B6]中任一項之製造方法,其中,不對形成有該第一鍍敷層之表面進行軟性蝕刻處理,該軟性蝕刻處理為拋光輪研磨、刷磨及化學研磨。 [B8]如[B1]至[B7]中任一項之製造方法,其中,該結構體為一片銅箔。 [B9]如[B8]之製造方法,其中,該結構體的第二表面的一部分或全部具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第二鍍敷層。 [B10]如[B9]之製造方法,其中,包含在形成有該第二鍍敷層之表面的一部分或全部積層樹脂基材的步驟。 [B11]如[B10]之製造方法,其中,該樹脂基材與該第二鍍敷層之間的剝離強度為0.5kgf/cm以上。 [B12]如[B10]或[B11]之製造方法,其中,該樹脂基材含有選自聚苯醚、環氧樹脂、聚氧二甲苯、聚苯噁唑、聚四氟乙烯、液晶聚合物、亞磷酸三苯酯、氟樹脂、聚醚醯亞胺、聚醚醚酮、聚環烯烴、雙馬來醯亞胺樹脂、低電容率聚醯亞胺及氰酸樹脂所組成之群組中的至少一種絕緣性樹脂。 [B13]如[B1]至[B7]中任一項之製造方法,其中,該結構體為貼銅層合板。 [B14]如[B10]至[B13]中任一項之製造方法,另包含: 對該光阻層的一部分照射光,顯影後,對該第一表面進行蝕刻處理,在該結構體形成佈線圖案的步驟;及 由該積層體剝離蝕刻處理後之該光阻層的步驟。 [B15]如[B14]之製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的Rz為0.2μm以上且1.0μm以下。 [B16]如[B14]或[B15]之製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的RSm為600nm以下。[B1] A method for manufacturing a laminate, which is performed on a structure having a first surface and a second surface made of copper, and a part or all of the first surface has a first copper oxide-containing layer, A first plating layer containing a metal other than copper is formed on part or all of the surface of the first copper oxide-containing layer, and the method of manufacturing the laminate includes applying a part of the first plating layer to the structure. Or the step of forming a photoresist layer on the entire surface. [B2] The manufacturing method as [B1], wherein the value of the lightness L* of the surface on which the first plating layer is formed is less than 50. [B3] The manufacturing method as [B1] or [B2], wherein, when the heat treatment is performed at 225° C. for 30 minutes, the color change of the surface on which the first plating layer is formed before and after the heat treatment is 10 or less. [B4] The manufacturing method of any one of [B1] to [B3], wherein the first plating layer contains nickel. [B5] The manufacturing method of any one of [B1] to [B4], wherein the average thickness of the first plating layer is 30 nm or more and 70 nm or less. [B6] The manufacturing method of any one of [B1] to [B5], wherein the photoresist layer is a dry film photoresist, a positive liquid photoresist or a negative liquid photoresist. [B7] The manufacturing method as in any one of [B1] to [B6], wherein the surface on which the first plating layer is formed is not subjected to soft etching treatment, and the soft etching treatment is polishing wheel grinding, brushing and chemical Grind. [B8] The manufacturing method as in any one of [B1] to [B7], wherein the structure is a piece of copper foil. [B9] The manufacturing method as [B8], wherein a part or all of the second surface of the structure has a second copper oxide-containing layer, and a part or all of the surface of the second copper oxide-containing layer is formed There is a second plating layer containing metals other than copper. [B10] The manufacturing method of [B9], which includes a step of laminating a resin base material on a part or all of the surface on which the second plating layer is formed. [B11] The manufacturing method as in [B10], wherein the peel strength between the resin substrate and the second plating layer is 0.5 kgf/cm or more. [B12] The manufacturing method as [B10] or [B11], wherein the resin substrate contains selected from polyphenylene ether, epoxy resin, polyoxyxylene, polybenzoxazole, polytetrafluoroethylene, liquid crystal polymer , Triphenyl phosphite, fluororesin, polyetherimide, polyetheretherketone, polycyclic olefin, bismaleimide resin, low permittivity polyimide and cyanate resin At least one insulating resin. [B13] The manufacturing method as in any one of [B1] to [B7], wherein the structure is a copper-clad laminate. [B14] The manufacturing method of any one of [B10] to [B13], further comprising: irradiating a part of the photoresist layer with light, and after developing, etching the first surface to form wiring on the structure A step of patterning; and a step of peeling off the photoresist layer after the etching process from the laminate. [B15] The manufacturing method as in [B14], wherein the Rz of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 0.2 μm or more and 1.0 μm or less. [B16] The manufacturing method as in [B14] or [B15], wherein the RSm of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 600 nm or less.

[C1]一種印刷基板的製造方法,包含: 對如[A11]至[A14]中任一項之積層體的該光阻層的一部分照射光,顯影後,對該第一表面進行蝕刻處理,在該結構體形成佈線圖案的步驟;及 由該積層體剝離蝕刻處理後之該光阻層的步驟。 [C2]如[C1]之製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的Rz為0.2μm以上且1.0μm以下。 [C3]如[C1]或[C2]之製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的RSm為600nm以下。[C1] A method of manufacturing a printed circuit board, including: The step of irradiating a part of the photoresist layer of the laminate of any one of [A11] to [A14] with light, and after developing, etching the first surface to form a wiring pattern on the structure; and The step of peeling off the photoresist layer after the etching process from the laminate. [C2] The manufacturing method as in [C1], wherein the Rz of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 0.2 μm or more and 1.0 μm or less. [C3] The manufacturing method as [C1] or [C2], wherein the RSm of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 600 nm or less.

[D1]一種複合銅佈線,係在具有第一面、第二面及第三面的由銅形成之佈線的該第一面,具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面形成有包含銅以外之金屬的第一鍍敷層。 [D2]如[D1]之複合銅佈線,其中,該由銅形成之佈線與該第一鍍敷層之間導通。 [D3]如[D1]或[D2]之複合銅佈線,其中,在該第二面具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面形成有包含銅以外之金屬的第二鍍敷層。 [D4]如[D3]之複合銅佈線,其中,該由銅形成之佈線與該第二鍍敷層之間導通。 [D5]如[D1]至[D4]中任一項之複合銅佈線,其中,在該第三面具有銅佈線保護層,該銅佈線保護層係選自由銅氧化物層、黑化處理層、防鏽劑層及耦合處理層所組成之群組。[D1] A composite copper wiring, on the first side of a wiring formed of copper having a first side, a second side, and a third side, with a first layer containing copper oxide, and the first layer containing copper oxide A first plating layer containing a metal other than copper is formed on the surface of the material layer. [D2] The composite copper wiring as in [D1], wherein the wiring formed of copper is conductive with the first plating layer. [D3] A composite copper wiring such as [D1] or [D2], wherein a second copper oxide-containing layer is provided on the second surface, and the surface of the second copper oxide-containing layer is formed with copper other than copper The second plating layer of metal. [D4] The composite copper wiring as in [D3], wherein the wiring formed of copper is conductive with the second plating layer. [D5] The composite copper wiring as in any one of [D1] to [D4], wherein a copper wiring protective layer is provided on the third surface, and the copper wiring protective layer is selected from a copper oxide layer and a blackening treatment layer , A group consisting of anti-rust agent layer and coupling treatment layer.

[E1]一種印刷基板,係在如[D1]至[D5]中任一項之複合銅佈線的第二面積層有樹脂基材。 [E2]如[E1]之印刷基板,其中,該第一面安裝有電子零件。 與相關文獻之交互參照:本申請案係基於2020年3月24日申請之日本特許出願2020-052151主張優先權,藉由引用該基礎申請案而包含於本說明書。[E1] A printed circuit board with a resin base material on the second area layer of the composite copper wiring as in any one of [D1] to [D5]. [E2] The printed circuit board such as [E1], wherein the first side is equipped with electronic components. Cross-reference with related documents: This application is based on the Japanese Patent Application 2020-052151 filed on March 24, 2020, which claims priority, and is included in this specification by citing the basic application.

以下使用附加圖式詳細地說明本發明的較佳實施形態,但不限定於此。又,根據本說明書的記載,發明所屬技術領域中具有通常知識者係明瞭本發明的目的、特徵、優點及其構思,發明所屬技術領域中具有通常知識者可容易地根據本說明書的記載重現本發明。以下記載之發明的實施形態及具體實施例等,係表示本發明的較佳實施態樣,用於例示及說明,不用以限定本發明。發明所屬技術領域中具有通常知識者係明瞭,在本說明書所揭示之本發明的意圖及範圍內,可基於本說明書的記載進行各種變更及修飾。The preferred embodiments of the present invention will be described in detail below using additional drawings, but it is not limited thereto. In addition, based on the description of this specification, a person with ordinary knowledge in the technical field of the invention can understand the purpose, features, advantages, and concept of the present invention, and a person with ordinary knowledge in the technical field of the invention can easily reproduce it from the description of this specification. this invention. The embodiments and specific examples of the invention described below represent preferred embodiments of the invention, and are used for illustration and description, and do not limit the invention. Those having ordinary knowledge in the technical field to which the invention pertains will understand that various changes and modifications can be made based on the description of this specification within the intent and scope of the invention disclosed in this specification.

<結構體>本發明之一實施態樣係結構體,其第一表面及第二表面為由銅形成之面。銅較佳為銅純度99.9質量%以上之純銅,更佳為以韌煉銅、去氧銅、無氧銅形成,又較佳為以含氧量0.001質量%~0.0005質量%之無氧銅形成。結構體可為電解銅箔或壓延銅箔等之一片銅箔、一片銅板。又,積層數個銅箔或銅板亦可。結構體為銅箔的情況下,其厚度不特別限定,較佳為0.1μm以上且100μm以下,更佳為0.5μm以上且50μm以下。結構體為銅板的情況下,其厚度較佳為超過100μm。其厚度不特別限定,更佳為1mm以上、2mm以上或10mm以上,又較佳為10cm以下、5cm以下或2.5cm以下。或者結構體亦可為貼銅層合板(Copper Clad Laminate:CCL)。將含浸樹脂之薄片(稱為樹脂基材或預浸體)重疊在紙或玻璃等基材,進行熱壓接處理所得到的絕緣板稱為積層板,在其兩面施加銅箔者即為貼銅層合板。有3層CCL及2層CCL等,使用任一種均可,3層CCL主要用於TAB(tape-automated bonding)法封裝,係以接著劑將銅箔及樹脂基材貼合,2層CCL用於COF(chip on film)法封裝,不使用接著劑。又,絕緣板亦可為不包含紙或玻璃等的樹脂薄片,銅與絕緣層之界面亦可存在有接著薄片或接著層。包含於樹脂基材之樹脂不特別限定,可為熱塑性樹脂或熱固性樹脂,較佳為聚苯醚(PPE)、環氧樹脂、聚氧二甲苯(PPO)、聚苯噁唑(PBO)、聚四氟乙烯(PTFE)、液晶聚合物(LCP)、亞磷酸三苯酯(TPPI)、氟樹脂、聚醚醯亞胺、聚醚醚酮、聚環烯烴、雙馬來醯亞胺樹脂、低電容率聚醯亞胺、氰酸樹脂或該等之混合樹脂。樹脂基材可進一步包含無機填充物或玻璃纖維。樹脂基材的厚度不特別限定,較佳為1μm以上且100mm以下。<Structure> One embodiment of the present invention is a structure whose first surface and second surface are surfaces formed of copper. Copper is preferably pure copper with a copper purity of 99.9% by mass or more, more preferably formed of toughened copper, deoxidized copper, and oxygen-free copper, and more preferably formed of oxygen-free copper with an oxygen content of 0.001% to 0.0005% by mass . The structure can be a piece of copper foil or a piece of copper plate such as electrolytic copper foil or rolled copper foil. In addition, several copper foils or copper plates may be laminated. When the structure is a copper foil, its thickness is not particularly limited, but it is preferably 0.1 μm or more and 100 μm or less, and more preferably 0.5 μm or more and 50 μm or less. When the structure is a copper plate, its thickness is preferably more than 100 μm. The thickness is not particularly limited, but is more preferably 1 mm or more, 2 mm or more, or 10 mm or more, and more preferably 10 cm or less, 5 cm or less, or 2.5 cm or less. Or the structure may also be a copper clad laminate (Copper Clad Laminate: CCL). The resin-impregnated sheet (called a resin substrate or a prepreg) is laminated on a substrate such as paper or glass, and the insulation board obtained by thermal compression bonding is called a laminated board, and copper foil is applied on both sides of the board. Copper laminate. There are three-layer CCL and two-layer CCL, etc. You can use either one. The three-layer CCL is mainly used for TAB (tape-automated bonding) packaging. The copper foil and resin substrate are bonded together with an adhesive. The two-layer CCL is used It is packaged in COF (chip on film) method and does not use adhesive. In addition, the insulating plate may be a resin sheet that does not contain paper, glass, etc., and an adhesive sheet or an adhesive layer may exist at the interface between the copper and the insulating layer. The resin contained in the resin substrate is not particularly limited, and may be a thermoplastic resin or a thermosetting resin, preferably polyphenylene ether (PPE), epoxy resin, polyoxyxylene (PPO), polybenzoxazole (PBO), poly Tetrafluoroethylene (PTFE), liquid crystal polymer (LCP), triphenyl phosphite (TPPI), fluororesin, polyetherimide, polyetheretherketone, polycyclic olefin, bismaleimide resin, low Permittivity polyimide, cyanate resin or mixed resin of these. The resin substrate may further include inorganic fillers or glass fibers. The thickness of the resin substrate is not particularly limited, but is preferably 1 μm or more and 100 mm or less.

結構體之表面的一部分或全部較佳具有包含銅氧化物之層。結構體為銅箔的情況下,包含銅氧化物之層較佳存在於結構體的兩面,結構體為CCL的情況下,包含銅氧化物之層可存在於結構體的單面,亦可存在於兩面。包含銅氧化物之層包含氧化銅(CuO)及/或氧化亞銅(Cu2 O)。此包含銅氧化物之層可藉由將結構體的表面氧化處理來形成。藉由此氧化處理,結構體的表面被粗化。對於包含銅氧化物之層,可用溶解劑調整經氧化後之結構體表面的凸部。又,可將包含銅氧化物之層的表面藉由還原劑作還原處理。純銅的電阻率為1.7×10-8 (Ωm),相較於此,氧化銅的電阻率為1~10(Ωm),氧化亞銅的電阻率為1×106 ~1×107 (Ωm),故氧化處理所形成之包含銅氧化物之層的導電性比純銅低。A part or all of the surface of the structure preferably has a layer containing copper oxide. When the structure is copper foil, the copper oxide-containing layer is preferably present on both sides of the structure. When the structure is CCL, the copper oxide-containing layer may exist on one side of the structure or may exist. On both sides. The layer containing copper oxide contains copper oxide (CuO) and/or cuprous oxide (Cu 2 O). The layer containing copper oxide can be formed by oxidizing the surface of the structure. With this oxidation treatment, the surface of the structure is roughened. For the layer containing copper oxide, a dissolving agent can be used to adjust the protrusions on the surface of the oxidized structure. In addition, the surface of the layer containing copper oxide can be reduced by a reducing agent. The resistivity of pure copper is 1.7×10 -8 (Ωm). In contrast, the resistivity of copper oxide is 1-10 (Ωm), and the resistivity of cuprous oxide is 1×10 6 ~1×10 7 (Ωm). ), so the conductivity of the copper oxide-containing layer formed by the oxidation treatment is lower than that of pure copper.

結構體的包含銅氧化物之層之表面的一部分或全部可包含銅以外之金屬。結構體為銅箔的情況下,銅以外之金屬較佳存在於結構體的兩面。所包含的金屬不特別限定,可包含選自由錫、銀、鋅、鋁、鈦、鉍、鉻、鐵、鈷、鎳、鈀、金及鉑組成之群組中至少一種之金屬。特別是為了使其具有耐酸性及耐熱性,較佳包含耐酸性及耐熱性比銅高之金屬,例如鎳、鈀、金及鉑。銅以外之金屬可作為一層而存在於包含銅氧化物之層的表面。包含銅以外之金屬的層可藉由例如以銅以外之金屬對包含銅氧化物之層的表面進行鍍敷處理來形成鍍敷層。鍍敷的方法不特別限定,可舉例如電鍍、無電解鍍、真空蒸鍍、化成處理等,較佳為形成均一的薄鍍敷層,故以電鍍為佳。A part or all of the surface of the copper oxide-containing layer of the structure may include a metal other than copper. When the structure is copper foil, metals other than copper are preferably present on both sides of the structure. The included metal is not particularly limited, and may include at least one metal selected from the group consisting of tin, silver, zinc, aluminum, titanium, bismuth, chromium, iron, cobalt, nickel, palladium, gold, and platinum. In particular, in order to have acid resistance and heat resistance, it is preferable to include metals with higher acid resistance and heat resistance than copper, such as nickel, palladium, gold, and platinum. Metals other than copper may exist as a layer on the surface of the layer containing copper oxide. The layer containing a metal other than copper can form a plating layer by, for example, plating the surface of the layer containing copper oxide with a metal other than copper. The plating method is not particularly limited, and examples include electroplating, electroless plating, vacuum vapor deposition, chemical conversion treatment, etc., and it is preferable to form a uniform thin plating layer, so electroplating is preferred.

對氧化處理後之結構體表面施加電鍍的情況下,首先表面的氧化銅被還原,形成氧化亞銅或純銅時使用電荷,因此,至形成鍍敷為止會產生時間的延遲,之後形成金屬層之金屬開始析出。其電荷量係因鍍敷液種類或銅氧化物量而不同,例如對銅構件施加鎳鍍的情況下,為了使其厚度形成於較佳範圍,較佳係給予所電鍍處理之銅構件的每dm2 面積15C以上且75C以下之電荷,更佳係給予25C以上且65C以下之電荷。藉由鍍敷處理,以氧化處理形成之氧化銅係一部分被還原成銅,包含銅氧化物之層的導電性提升,形成結構體之導電體的銅與同樣為導電體的包含銅以外之金屬的層之間可導通。When electroplating is applied to the surface of the structure after oxidation treatment, the copper oxide on the surface is first reduced to form cuprous oxide or pure copper. Therefore, there is a time delay until the plating is formed, and then the metal layer is formed. Metal began to precipitate. The amount of charge varies depending on the type of plating solution or the amount of copper oxide. For example, when nickel plating is applied to a copper member, in order to make the thickness within a preferable range, it is better to give every dm of the copper member to be electroplated 2 Charges with an area of 15C or more and 75C or less are more preferably given with a charge of 25C or more and 65C or less. By plating, a part of the copper oxide formed by oxidation is reduced to copper, and the conductivity of the copper oxide-containing layer is improved. The copper that forms the conductor of the structure and the same conductor that contains metals other than copper Can be connected between the layers.

確認導通的方法不特別限定,例如,相對於包含銅以外之金屬的鍍敷層的平面觀察面積4μm2 ,形成結構體之導電體的銅與同樣為導電體的包含銅以外之金屬的層之間,施加-0.5V電壓時的原子力顯微鏡(AFM)之電流影像中,電流值為-60nA以下之區域為包含銅以外之金屬的鍍敷層的每單位平面觀察面積的2.5%以上、5%以上或10%以上時,形成結構體之導電體的銅與同樣為導電體的包含銅以外之金屬的層之間可視為導通。或者,使用結構體形成佈線圖案,製造印刷基板時,在包含銅以外之金屬的層上安裝電子零件,做為電路發揮功能,則形成結構體之導電體的銅與同樣為導電體的包含銅以外之金屬的層之間可視為導通。藉由鍍敷形成於結構體表面的包含銅以外之金屬的層,其垂直方向的平均厚度不特別限定,較佳為10nm以上、20nm以上、30nm以上或40nm以上。惟,更佳為80nm以下,又較佳為70nm以下、65nm以下。此外,包含銅氧化物之層所包含的銅以外之金屬,其垂直方向的平均厚度係可以將包含銅氧化物之層以酸性溶液溶解,藉由ICP分析測定金屬量,將其測定量除以結構體的平面觀察面積來算出。The method of confirming the continuity is not particularly limited. For example, with respect to the planar observation area of 4μm 2 of the plating layer containing a metal other than copper, the copper forming the conductor of the structure and the layer containing the metal other than copper which are also conductors In the current image of an atomic force microscope (AFM) when a voltage of -0.5V is applied, the area with a current value of -60nA or less is 2.5% or more and 5% per unit plane observation area of the plating layer containing metals other than copper Above or above 10%, the copper forming the conductor of the structure and the layer containing a metal other than copper, which is also the conductor, can be regarded as conductive. Or, when a structure is used to form a wiring pattern, and when a printed circuit board is manufactured, electronic parts are mounted on a layer containing a metal other than copper to function as a circuit, and the copper that forms the conductor of the structure is the same as the conductor that contains copper. The layers of other metals can be regarded as conducting. The average thickness in the vertical direction of the layer containing a metal other than copper formed on the surface of the structure by plating is not particularly limited, but is preferably 10 nm or more, 20 nm or more, 30 nm or more, or 40 nm or more. However, it is more preferably 80 nm or less, and more preferably 70 nm or less and 65 nm or less. In addition, for metals other than copper contained in the copper oxide-containing layer, the average thickness in the vertical direction can be such that the copper oxide-containing layer can be dissolved in an acid solution, and the amount of metal can be measured by ICP analysis, and the measured amount can be divided by Calculate the area of the structure when viewed from the plane.

形成有鍍敷層之表面的L* a* b* 色系中的明度L* 之值較佳為未滿60、未滿55、未滿50、未滿45、未滿40、未滿35、未滿30、未滿25或未滿20,此值越小則越能抑制曝光光線反射。 The L* a * b * value of the lightness L * in the color system on the surface on which the plating layer is formed is preferably less than 60, less than 55, less than 50, less than 45, less than 40, less than 35, Less than 30, less than 25, or less than 20. The smaller the value, the more the reflection of exposure light can be suppressed.

在形成有鍍敷層之表面,較佳為不產生表面的氧化或變質導致之脆弱層(Weak Boundary Layer:WBL)。若形成脆弱層,則影響與光阻層的密著性。耐熱性(容易產生脆弱層的程度)係可由加熱處理時的形成有鍍敷層之表面的顏色變化來評價。顏色變化小的情況下,不易產生脆弱層,可得到光阻層的良好密著性。於225℃熱處理30分鐘時,在熱處理前後所比較的形成有鍍敷層之表面的顏色變化(ΔE* ab)較佳為10以下、5以下、3以下、2以下或1以下,但不限定於此。On the surface on which the plating layer is formed, it is preferable that a weak layer (Weak Boundary Layer: WBL) does not occur due to oxidation or deterioration of the surface. If the fragile layer is formed, the adhesion to the photoresist layer will be affected. The heat resistance (the degree to which a fragile layer is easily generated) can be evaluated by the color change of the surface on which the plating layer is formed during the heat treatment. When the color change is small, a fragile layer is not easy to produce, and good adhesion of the photoresist layer can be obtained. When heat treatment at 225°C for 30 minutes, the color change (ΔE * ab) of the surface on which the plating layer is formed before and after the heat treatment is preferably 10 or less, 5 or less, 3 or less, 2 or less, or 1, but not limited Here.

結構體為銅箔的情況下,形成有鍍敷層之表面的最大高度粗度(Rz)較佳為1.0μm以下、0.9μm以下或0.8μm以下,且較佳為0.1μm以上、0.2μm以上或0.3μm以上。Rz係表示基準長度l中,輪廓曲線(y=Z(x))的峰高Zp之最大值與谷深Zv之最大值的和。Rz可根據JIS B 0601:2001(基於國際標準ISO13565-1)規定之方法算出。When the structure is copper foil, the maximum height roughness (Rz) of the surface on which the plating layer is formed is preferably 1.0 μm or less, 0.9 μm or less, or 0.8 μm or less, and more preferably 0.1 μm or more and 0.2 μm or more Or 0.3μm or more. The Rz system represents the sum of the maximum value of the peak height Zp and the maximum value of the valley depth Zv of the profile curve (y=Z(x)) in the reference length l. Rz can be calculated according to the method specified in JIS B 0601:2001 (based on the international standard ISO13565-1).

結構體為銅箔的情況下,形成有鍍敷層之表面的粗度曲線參數的平均長度(RSm)較佳為750nm以下、700nm以下、650nm以下、600nm以下、550nm以下、450nm以下或350nm以下,且較佳為100nm以上、200nm以上或300nm以上。RSm表示一個基準長度(lr)之粗度曲線所包含的一個週期量的凹凸產生的長度(即輪廓曲線參數的長度:Xs1~Xsm)之平均,用下述式子算出。 數式1:

Figure 02_image001
在此,算數平均粗度(Ra)的10%作為凹凸的最小高度,基準長度(lr)的1%作為最小長度以定義一個週期量的凹凸。算數平均粗度(Ra)係表示基準長度l中,以下式表示之輪廓曲線(y=Z(x))中Z(x)(即峰高及谷深)之絕對值的平均值。 數式2:
Figure 02_image003
舉例如,Rsm可根據「利用原子力顯微鏡之精密陶瓷薄膜的表面粗度測定方法(JIS R 1683:2007)」來測定並算出。When the structure is copper foil, the average length (RSm) of the roughness curve parameter of the surface where the plating layer is formed is preferably 750nm or less, 700nm or less, 650nm or less, 600nm or less, 550nm or less, 450nm or less, or 350nm or less , And preferably more than 100 nm, more than 200 nm, or more than 300 nm. RSm represents the average of the length (that is, the length of the profile curve parameter: Xs1 ~ Xsm) of the unevenness of one period included in the roughness curve of a reference length (lr), and is calculated by the following formula. Mathematical formula 1:
Figure 02_image001
Here, 10% of the arithmetic average roughness (Ra) is taken as the minimum height of the concavity and convexity, and 1% of the reference length (lr) is taken as the minimum length to define a period of concavity and convexity. The arithmetic average roughness (Ra) is the average value of the absolute value of Z(x) (namely peak height and valley depth) in the contour curve (y=Z(x)) represented by the following formula in the reference length l. Mathematical formula 2:
Figure 02_image003
For example, Rsm can be measured and calculated according to "Method for Measuring Surface Roughness of Precision Ceramic Thin Films Using Atomic Force Microscope (JIS R 1683:2007)".

<具有包含氧化銅之層及鍍敷層的結構體的製造方法>本發明之一實施態樣係具有包含氧化銅之層及鍍敷層的結構體的製造方法,包含以氧化劑形成包含氧化銅之層的第一步驟;及在形成有包含氧化銅之層的結構體表面進行鍍敷處理的第二步驟。以該製造方法可製造具有第一表面及第二表面之結構體,第一表面及第二表面係由銅構成之面,第一表面的一部分或全部具有第一包含銅氧化物之層,第一包含銅氧化物之層的表面的一部分或全部具有包含銅以外之金屬的第一鍍敷層。<Method for manufacturing a structure having a layer containing copper oxide and a plating layer> One embodiment of the present invention is a method for manufacturing a structure having a layer containing copper oxide and a plating layer, including forming a structure containing copper oxide with an oxidizing agent The first step of the layer; and the second step of plating the surface of the structure on which the layer containing copper oxide is formed. With this manufacturing method, a structure having a first surface and a second surface can be manufactured. The first surface and the second surface are surfaces made of copper. A part or all of the first surface has a first layer containing copper oxide. A part or all of the surface of a layer containing copper oxide has a first plating layer containing a metal other than copper.

首先,第一步驟中,將結構體以氧化劑氧化,形成銅氧化物層,且在表面形成微細的凹凸。氧化處理可為單面處理或兩面處理。此氧化步驟之前不需要軟性蝕刻或蝕刻等粗化處理步驟,但亦可進行。又,氧化處理前亦可進行脫脂處理、藉由去除自然氧化膜以進行均一化處理之酸清洗、或在酸清洗後進行鹼處理以防止酸被帶入氧化步驟。鹼處理的方法不特別限定,較佳可用0.1~10g/L之鹼性水溶液,更佳可用1~2g/L之鹼性水溶液,鹼性水溶液例如氫氧化鈉水溶液,於30~50℃處理0.5~2分鐘程度即可。First, in the first step, the structure is oxidized with an oxidizing agent to form a copper oxide layer, and fine irregularities are formed on the surface. The oxidation treatment can be single-sided or double-sided. Before this oxidation step, roughening treatment steps such as soft etching or etching are not required, but it can be carried out. Furthermore, it is also possible to perform degreasing treatment before oxidation treatment, acid cleaning by removing natural oxide film for homogenization treatment, or alkali treatment after acid cleaning to prevent acid from being carried into the oxidation step. The method of alkali treatment is not particularly limited, preferably 0.1-10g/L alkaline aqueous solution, more preferably 1-2g/L alkaline aqueous solution, alkaline aqueous solution such as sodium hydroxide aqueous solution, treated at 30-50°C for 0.5 ~2 minutes is enough.

氧化劑不特別限定,例如可使用亞氯酸鈉、次氯酸鈉、氯酸鉀、過氯酸鉀、過硫酸鉀等水溶液。氧化劑中可添加各種添加劑(例如磷酸三鈉十二水合物這樣的磷酸鹽)或表面活性分子。表面活性分子可舉例如紫質、紫質大環、擴張紫質、縮環紫質、紫質直鏈聚合物、紫質夾心配位錯合物、紫質陣列、矽烷、四有機基-矽烷、胺基乙基-胺基丙基-三甲氧基矽烷、(3-胺基丙基)三甲氧基矽烷、(1-[3-(三甲氧基矽基)丙基]尿素)(l-[3-(Trimethoxysilyl)propyl]urea)、(3-胺基丙基)三乙氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、(3-氯丙基)三甲氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基矽基)丙基甲基丙烯酸酯、乙基三乙醯氧基矽烷、三乙氧基(異丁基)矽烷、三乙氧基(辛基)矽烷、參(2-甲氧基乙氧基)(乙烯基)矽烷、氯三甲基矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯基-三甲氧基矽烷、胺、糖等。The oxidizing agent is not particularly limited. For example, aqueous solutions such as sodium chlorite, sodium hypochlorite, potassium chlorate, potassium perchlorate, and potassium persulfate can be used. Various additives (such as phosphate such as trisodium phosphate dodecahydrate) or surface-active molecules can be added to the oxidizing agent. Surface-active molecules include, for example, porphyrin, porphyrin macrocycles, expanded porphyrin, condensed porphyrin, porphyrin linear polymers, porphyrin-sandwich coordination complexes, porphyrin arrays, silanes, tetraorgano-silanes , Aminoethyl-aminopropyl-trimethoxysilane, (3-aminopropyl)trimethoxysilane, (1-[3-(trimethoxysilyl)propyl]urea) (l- [3-(Trimethoxysilyl)propyl]urea), (3-aminopropyl)triethoxysilane, (3-epoxypropyloxypropyl)trimethoxysilane, (3-chloropropyl)trimethoxy Silane, (3-epoxypropyloxypropyl)trimethoxysilane, dimethyldichlorosilane, 3-(trimethoxysilyl)propyl methacrylate, ethyltriethoxysilane , Triethoxy (isobutyl) silane, triethoxy (octyl) silane, ginseng (2-methoxyethoxy) (vinyl) silane, chlorotrimethylsilane, methyltrichlorosilane , Silicon tetrachloride, tetraethoxysilane, phenyltrimethoxysilane, chlorotriethoxysilane, vinyl-trimethoxysilane, amine, sugar, etc.

氧化反應條件不特別限定,氧化用藥液的液溫較佳為40~95℃,更佳為45~80℃。反應時間較佳為0.5~30分,更佳為1~10分。The oxidation reaction conditions are not particularly limited, and the liquid temperature of the oxidation chemical solution is preferably 40 to 95°C, more preferably 45 to 80°C. The reaction time is preferably 0.5 to 30 minutes, more preferably 1 to 10 minutes.

第一步驟中,可用溶解劑將包含銅氧化物之層溶解一部分。In the first step, a dissolving agent can be used to dissolve a part of the layer containing copper oxide.

於本步驟使用之溶解劑不特別限定,較佳為螯合劑,特別是生物分解性螯合劑等,可舉例如乙二胺四乙酸、二羥乙基甘胺酸、L-麩胺酸二乙酸四鈉、乙二胺-N,N’-二琥珀酸、3-羥基-2,2’-亞胺基二琥珀酸鈉、甲基甘胺酸二乙酸三鈉、天門冬胺酸二乙酸四鈉、N-(2-羥基乙基)亞胺基二乙酸二鈉、葡萄糖酸鈉等。The dissolving agent used in this step is not particularly limited, and is preferably a chelating agent, especially a biodegradable chelating agent, etc., for example, ethylenediaminetetraacetic acid, dihydroxyethylglycine, L-glutamic acid diacetic acid Tetrasodium, ethylenediamine-N,N'-disuccinic acid, 3-hydroxy-2,2'-imino sodium disuccinate, trisodium methylglycine diacetate, aspartic acid diacetate Sodium, disodium N-(2-hydroxyethyl)iminodiacetate, sodium gluconate, etc.

溶解用藥液的pH值不特別限定,較佳為鹼性,更佳為pH8~10.5,又較佳為pH9.0~10.5,又更佳為pH9.8~10.2。The pH of the solution for dissolving is not particularly limited, but it is preferably alkaline, more preferably pH 8 to 10.5, still more preferably pH 9.0 to 10.5, and still more preferably pH 9.8 to 10.2.

又,第一步驟中,可使用含有還原劑之藥液(還原用藥液)將所形成之含銅氧化物之層包含的銅氧化物還原一部分。In addition, in the first step, a chemical solution containing a reducing agent (reduction chemical solution) may be used to partially reduce the copper oxide contained in the formed copper oxide-containing layer.

還原劑可使用DMAB(二甲基胺硼烷)、乙硼烷、硼氫化鈉、聯氨等。又,還原用藥液為包含還原劑、鹼性化合物(氫氧化鈉、氫氧化鉀等)及溶劑(純水等)之液體。The reducing agent can be DMAB (dimethylamine borane), diborane, sodium borohydride, hydrazine, etc. In addition, the chemical solution for reduction is a liquid containing a reducing agent, an alkaline compound (sodium hydroxide, potassium hydroxide, etc.), and a solvent (pure water, etc.).

接著,對形成有包含銅氧化物之層的結構體表面,以銅以外之金屬進行鍍敷處理,藉此製造具有包含氧化銅之層及鍍敷層的結構體。Next, the surface of the structure on which the layer containing copper oxide is formed is plated with a metal other than copper, thereby manufacturing a structure having a layer containing copper oxide and a plating layer.

在不損害本發明之技術特徵的範圍內,可對該等步驟製造的結構體進行使用矽烷耦合劑等之耦合處理或分子接合處理、使用苯并三唑類等之防鏽處理。In the range that does not impair the technical characteristics of the present invention, the structure manufactured by these steps can be subjected to coupling treatment using silane coupling agent or the like, molecular bonding treatment, and anti-rust treatment using benzotriazoles and the like.

<積層體>本發明之一實施態樣係積層體,其於結構體的一部分表面具有光阻層。光阻層較佳積層於鍍敷層的一部分或全部的表面。<Laminated body> One embodiment of the present invention is a laminated body having a photoresist layer on a part of the surface of the structure. The photoresist layer is preferably laminated on a part or all of the surface of the plating layer.

光阻層係包含可藉由感光而硬化或溶解之材料的層,較佳用乾膜光阻(DFR)、正型液狀光阻或負型液狀光阻形成,但不特別限定。DFR較佳包含有助於薄膜形成性之黏合劑聚合物(包含鹼性顯影型及溶劑顯影型)及藉由UV照射產生光聚合反應之單體(例如丙烯酸酯系或甲基丙烯酸酯系單體)與光聚合起始劑。為了形成DFR,較佳使用具有覆蓋薄膜/光阻/載體薄膜之三層構造的乾膜。藉由一邊剝離覆蓋薄膜一邊將光阻熱壓接於結構體並積層,積層後剝離載體薄膜,可在結構體形成光阻層即DFR。正型液狀光阻、負型液狀光阻可舉例如溶於有機溶劑之酚醛樹脂(Novolak)等。關於液狀光阻,可藉由在結構體表面塗佈後乾燥來形成光阻層。光阻層的厚度不特別限定,較佳為5μm~200μm。The photoresist layer is a layer containing a material that can be hardened or dissolved by light exposure, and is preferably formed of dry film photoresist (DFR), positive liquid photoresist or negative liquid photoresist, but is not particularly limited. DFR preferably contains a binder polymer (including alkaline developing type and solvent developing type) that contributes to film formation and monomers that generate photopolymerization by UV irradiation (such as acrylate or methacrylate monomers). Body) and photopolymerization initiator. In order to form DFR, it is preferable to use a dry film with a three-layer structure of cover film/photoresist/carrier film. By peeling off the cover film while thermally compressing the photoresist to the structure and lamination, after lamination, the carrier film is peeled off to form a photoresist layer, or DFR, on the structure. The positive liquid photoresist and the negative liquid photoresist may, for example, be phenolic resin (Novolak) dissolved in an organic solvent. Regarding the liquid photoresist, the photoresist layer can be formed by coating on the surface of the structure and drying. The thickness of the photoresist layer is not particularly limited, but is preferably 5 μm to 200 μm.

形成光阻層的形成有鍍敷層之表面的Rz較佳為1.0μm以下、0.9μm以下或0.8μm以下,且較佳為0.1μm以上、0.2μm以上或0.3μm以上。又,形成光阻層的形成有鍍敷層之表面的RSm較佳為750nm以下、700nm以下、650nm以下、600nm以下、550nm以下、450nm以下或350nm以下,且較佳為100nm以上、200nm以上或300nm以上。上述表面粗度係有關光阻層的密著性與剝離性。Rz若太小則與光阻層的密著性不足,若太大則蝕刻處理後光阻層難以剝離。另一方面, RSm若太大則與光阻層的密著性不足,若太小則蝕刻處理後光阻層難以剝離。The Rz of the surface on which the plated layer is formed on which the photoresist layer is formed is preferably 1.0 μm or less, 0.9 μm or less, or 0.8 μm or less, and more preferably 0.1 μm or more, 0.2 μm or more, or 0.3 μm or more. In addition, the RSm of the plated surface on which the photoresist layer is formed is preferably 750nm or less, 700nm or less, 650nm or less, 600nm or less, 550nm or less, 450nm or less, or 350nm or less, and preferably 100nm or more, 200nm or more, or 300nm or more. The above-mentioned surface roughness relates to the adhesion and peelability of the photoresist layer. If Rz is too small, the adhesion to the photoresist layer will be insufficient, and if it is too large, the photoresist layer will be difficult to peel off after etching. On the other hand, if RSm is too large, the adhesion to the photoresist layer is insufficient, and if it is too small, the photoresist layer is difficult to peel off after etching.

積層體可在結構體的與形成有光阻層之面相反的面具有樹脂基材。樹脂基材較佳係藉由熱壓接而積層於結構體。樹脂基材與結構體之密著性高為佳。密著性可基於90度剝離試驗(日本工業規格(JIS)C5016「可撓性印刷佈線板試驗方法」;對應國際規格IEC249-1:1982、IEC326-2:1990)作為剝離強度來測定。樹脂基材與結構體之間的剝離強度較佳為0.40kgf/cm以上、0.50kgf/cm以上或0.60kgf/cm以上,但不限定於此。The laminate may have a resin base material on the surface of the structure opposite to the surface on which the photoresist layer is formed. The resin substrate is preferably laminated on the structure by thermocompression bonding. The adhesion between the resin substrate and the structure is better. Adhesion can be measured based on a 90-degree peel test (Japanese Industrial Standards (JIS) C5016 "Test Method for Flexible Printed Wiring Boards"; corresponding international standards IEC249-1:1982, IEC326-2:1990) as the peel strength. The peel strength between the resin substrate and the structure is preferably 0.40 kgf/cm or more, 0.50 kgf/cm or more, or 0.60 kgf/cm or more, but it is not limited to this.

<積層體的製造方法>本發明之一實施態樣係積層體的製造方法,該積層體包含結構體及光阻層,該製造方法包含在本發明之結構體形成光阻層的步驟。形成光阻層的步驟可舉出:使用乾膜且一邊加熱光阻一邊貼附;將正型液狀光阻或負型液狀光阻於室溫塗佈並乾燥等。<Method of Manufacturing Laminated Body> One embodiment of the present invention is a method of manufacturing a laminated body including a structure and a photoresist layer, and the manufacturing method includes the step of forming a photoresist layer on the structure of the present invention. The step of forming the photoresist layer may include: using a dry film and attaching the photoresist while heating; applying a positive liquid photoresist or a negative liquid photoresist at room temperature and drying.

通常在形成光阻層前,為了增加密著性而進行軟性蝕刻處理,但本發明之具有包含氧化銅之層及鍍敷層的結構體的情況下,可藉由此結構體得到與光阻層之密著性,故在形成光阻層的步驟前可不進行軟性蝕刻處理。軟性蝕刻處理可舉出拋光輪(buff roll)研磨、刷磨(scrubbing)、噴射研磨(jet scrubbing)、化學研磨及該等之組合。化學研磨可舉出:含浸於包含硫酸及過氧化氫之水溶液;包含氯化銅之水溶液;包含過硫酸鹽之水溶液;包含苯并三唑之有機溶劑;包含過錳酸之水溶液等。Generally, before forming the photoresist layer, a soft etching process is performed in order to increase the adhesion. However, in the case of the structure of the present invention having a layer containing copper oxide and a plating layer, the structure can be combined with the photoresist Because of the adhesion of the layer, the soft etching process may not be performed before the step of forming the photoresist layer. The soft etching treatment can include buff roll polishing, scrubbing, jet scrubbing, chemical polishing, and combinations of these. Chemical polishing can include: immersion in an aqueous solution containing sulfuric acid and hydrogen peroxide; an aqueous solution containing copper chloride; an aqueous solution containing persulfate; an organic solvent containing benzotriazole; an aqueous solution containing permanganic acid, and the like.

此外,可包含在與形成有光阻層之面相反的面藉由熱壓接(thermal press fitting)積層樹脂基材的步驟。此步驟可在形成光阻層的步驟之前或之後進行,亦可同時進行,較佳係在形成光阻層的步驟之前進行。In addition, it may include a step of laminating the resin substrate by thermal press fitting on the surface opposite to the surface on which the photoresist layer is formed. This step can be performed before or after the step of forming the photoresist layer, or can be performed at the same time, and is preferably performed before the step of forming the photoresist layer.

在與形成有光阻層之面相反的面熱壓接樹脂基材的條件係可使用各基材製造商推薦的條件(如溫度、壓力、時間)。各基材製造商推薦的條件例如可考量以下條件。The conditions for thermocompression bonding of the resin substrate on the surface opposite to the surface on which the photoresist layer is formed can be the conditions recommended by each substrate manufacturer (such as temperature, pressure, and time). For the conditions recommended by each substrate manufacturer, the following conditions can be considered, for example.

1)樹脂基材包含環氧樹脂,或由環氧樹脂形成的情況下,較佳係在50℃~300℃之溫度施加0~20MPa之壓力1分鐘~5小時,藉此將複合銅構件熱壓接於樹脂基材。例如, 1-1)樹脂基材為R-1551(Panasonic製)的情況下,於1MPa之壓力下加熱,到達100℃後於該溫度維持5~10分鐘,之後於3.3MPa之壓力下進一步加熱,到達170~180℃後於該溫度維持50分鐘,以進行熱壓接。 1-2)樹脂基材為R-1410A(Panasonic製)的情況下,於1MPa之壓力下加熱,到達130℃後於該溫度維持10分鐘,之後於2.9MPa之壓力下進一步加熱,到達200℃後於該溫度維持70分鐘,以進行熱壓接。 1-3)樹脂基材為EM-285(EMC製)的情況下,於0.4MPa之壓力下加熱,到達100℃後,提升壓力至2.4~2.9MPa再進一步加熱,到達195℃後於該溫度維持50分鐘,以進行熱壓接。 1-4)樹脂基材為GX13(味之素製)的情況下,於1.0MPa之壓力下加熱,於180℃維持60分鐘以進行熱壓接。1) In the case where the resin substrate contains epoxy resin or is formed of epoxy resin, it is preferable to apply a pressure of 0-20 MPa at a temperature of 50°C to 300°C for 1 minute to 5 hours to heat the composite copper component. Crimped to the resin substrate. E.g, 1-1) When the resin substrate is R-1551 (manufactured by Panasonic), it is heated at a pressure of 1 MPa, and after reaching 100°C, the temperature is maintained at that temperature for 5 to 10 minutes, and then further heated at a pressure of 3.3 MPa to reach After 170-180°C, maintain the temperature for 50 minutes to perform thermocompression bonding. 1-2) When the resin substrate is R-1410A (manufactured by Panasonic), heat it at a pressure of 1 MPa. After reaching 130°C, maintain the temperature for 10 minutes, and then further heat it at a pressure of 2.9 MPa to reach 200°C. After that, the temperature was maintained for 70 minutes to perform thermocompression bonding. 1-3) When the resin base material is EM-285 (manufactured by EMC), heat it at a pressure of 0.4 MPa. After reaching 100°C, increase the pressure to 2.4 to 2.9 MPa and then further heat it. After reaching 195°C, it will be heated at this temperature. Maintain for 50 minutes for thermocompression bonding. 1-4) When the resin substrate is GX13 (manufactured by Ajinomoto), heat it under a pressure of 1.0 MPa and maintain it at 180°C for 60 minutes to perform thermocompression bonding.

2)樹脂基材包含PPE樹脂,或由PPE樹脂形成的情況下,較佳係在50℃~350℃之溫度施加0~20MPa之壓力1分鐘~5小時,藉此將複合銅構件熱壓接於樹脂基材。例如, 2-1)樹脂基材為R5620(Panasonic股份有限公司製)的情況下,一邊於0.5MPa之壓力下加熱至100℃一邊熱壓接後,提升溫度及壓力,於2.0~3.0MPa、200~210℃維持120分鐘以進一步熱壓接。 2-2)樹脂基材為R5670(Panasonic股份有限公司製)的情況下,一邊於0.49MPa之壓力下加熱至110℃一邊熱壓接後,提升溫度及壓力,於2.94MPa、210℃維持120分鐘以進一步熱壓接。 2-3)樹脂基材為R5680(Panasonic股份有限公司製)的情況下,一邊於0.5MPa之壓力下加熱至110℃一邊熱壓接後,提升溫度及壓力,於3.0~4.0MPa、195℃維持75分鐘以進一步熱壓接。 2-4)樹脂基材為N-22(Nelco製)的情況下,於1.6~2.3MPa之壓力下加熱,於177℃維持30分鐘後,進一步加熱,於216℃維持60分鐘以進行熱壓接。2) When the resin base material contains PPE resin or is formed of PPE resin, it is preferable to apply a pressure of 0-20 MPa at a temperature of 50°C to 350°C for 1 minute to 5 hours, thereby thermocompression bonding of the composite copper member For resin substrate. E.g, 2-1) When the resin substrate is R5620 (manufactured by Panasonic Co., Ltd.), after heating to 100°C under a pressure of 0.5 MPa, after thermo-compression bonding, the temperature and pressure are increased to 2.0-3.0 MPa, 200- Maintain at 210°C for 120 minutes for further thermocompression bonding. 2-2) When the resin substrate is R5670 (manufactured by Panasonic Co., Ltd.), after heating to 110°C under a pressure of 0.49 MPa, after thermo-compression bonding, the temperature and pressure are increased and maintained at 2.94 MPa and 210°C at 120°C. Minutes to further heat and crimp. 2-3) When the resin substrate is R5680 (manufactured by Panasonic Co., Ltd.), after heating to 110°C under a pressure of 0.5 MPa, after thermo-compression bonding, raise the temperature and pressure to 3.0 to 4.0 MPa, 195°C Maintain for 75 minutes for further thermo-compression bonding. 2-4) When the resin base material is N-22 (manufactured by Nelco), heat it at a pressure of 1.6 to 2.3 MPa, maintain it at 177°C for 30 minutes, then heat it further, and hold it at 216°C for 60 minutes to perform hot pressing catch.

3)樹脂基材包含PTFE樹脂,或由PTFE樹脂形成的情況下,較佳係在50℃~400℃之溫度施加0~20MPa之壓力1分鐘~5小時,藉此將複合銅構件熱壓接於樹脂基材。例如, 3-1)樹脂基材為NX9255(Park Electrochemical製)的情況下,於0.69MPa之壓力下加熱至260℃,提升壓力至1.03~1.72MPa並加熱至385℃,於385℃維持10分鐘以進行熱壓接。 3-2)樹脂基材為RO3003(Rogers製)的情況下,壓製開始50分鐘(約220℃)以後,加壓至2.4MPa,於371℃維持30~60分鐘以進行熱壓接。3) When the resin base material contains PTFE resin or is formed of PTFE resin, it is preferable to apply a pressure of 0-20 MPa at a temperature of 50°C to 400°C for 1 minute to 5 hours, thereby thermocompression bonding of the composite copper member For resin substrate. E.g, 3-1) When the resin substrate is NX9255 (manufactured by Park Electrochemical), heat to 260°C under a pressure of 0.69 MPa, increase the pressure to 1.03 to 1.72 MPa and heat to 385°C, and maintain at 385°C for 10 minutes. Hot crimping. 3-2) When the resin substrate is RO3003 (manufactured by Rogers), 50 minutes (approximately 220°C) after the start of pressing, pressurize to 2.4 MPa and maintain at 371°C for 30 to 60 minutes to perform thermocompression bonding.

<複合銅佈線>本發明之一實施態樣為複合銅佈線,其係在由銅形成之佈線的一部分表面具有包含銅氧化物之層,在該包含銅氧化物之層的表面具有包含銅以外之金屬的鍍敷層。第2圖顯示複合銅佈線之一例示概略圖。佈線係導電之導體,藉由在其上安裝電子零件(電阻、電容器、二極體或電晶體等)形成電子電路。包含銅氧化物之層具有導電性為佳。包含銅氧化物之層具有導電性,藉此可使由銅形成之佈線與包含銅以外之金屬的鍍敷層之間導通。複合銅佈線可藉由本發明之結構體或積層體來製造。<Composite Copper Wiring> One embodiment of the present invention is a composite copper wiring, which has a layer containing copper oxide on a part of the surface of a wiring formed of copper, and the surface of the layer containing copper oxide has copper other than copper. The metal plating layer. Figure 2 shows a schematic diagram of an example of composite copper wiring. Wiring is a conductive conductor, and an electronic circuit is formed by mounting electronic parts (resistors, capacitors, diodes or transistors, etc.) on it. The layer containing copper oxide is preferably conductive. The layer containing copper oxide has conductivity, thereby enabling conduction between the wiring formed of copper and the plating layer containing a metal other than copper. The composite copper wiring can be manufactured by the structure or laminate of the present invention.

<印刷基板>本發明之一實施態樣為包含本發明之複合銅佈線的印刷基板。印刷基板包含印刷佈線板(Printed Wiring Board:PWB)及印刷電路板(Printed Circuit Board:PCB),印刷佈線板係僅被施加導體的佈線,未安裝電子零件之狀態,印刷電路板係電子零件被焊接,而作為電子電路作動之狀態。<Printed substrate> One embodiment of the present invention is a printed substrate containing the composite copper wiring of the present invention. The printed circuit board includes a printed wiring board (Printed Wiring Board: PWB) and a printed circuit board (Printed Circuit Board: PCB). Soldering, as the state of the electronic circuit in action.

<複合銅佈線及印刷基板的製造方法>本發明之一實施態樣為複合銅佈線及包含複合銅佈線之印刷基板的製造方法,包含對本發明之積層體所包含的光阻層之一部分照射光,顯影後,對形成光阻層之面進行蝕刻處理,去除不需要的部分,在結構體形成規定的佈線圖案,藉此形成電路。<The manufacturing method of composite copper wiring and printed circuit board> One embodiment of the present invention is a manufacturing method of composite copper wiring and a printed circuit board containing composite copper wiring, including irradiating light to a part of the photoresist layer included in the laminate of the present invention After development, the surface where the photoresist layer is formed is etched to remove unnecessary parts, and a predetermined wiring pattern is formed on the structure, thereby forming a circuit.

照射的光只要是使光阻層所包含的樹脂硬化或溶解的光即可。乾膜的情況下,較佳為波長100nm~500nm的光。正型液狀光阻、負型液狀光阻的情況下,較佳為波長10nm~900nm的光。光的照射量、照射時間與光阻層的厚度有關。較佳為1、10或100~1000mJ/cm2 的照射量,但不特別限定。The light to be irradiated may be light that hardens or dissolves the resin contained in the photoresist layer. In the case of a dry film, it is preferably light with a wavelength of 100 nm to 500 nm. In the case of a positive type liquid photoresist or a negative type liquid photoresist, it is preferably light with a wavelength of 10 nm to 900 nm. The amount of light irradiation and the irradiation time are related to the thickness of the photoresist layer. Preferably, it is an irradiation dose of 1, 10, or 100 to 1000 mJ/cm 2 , but it is not particularly limited.

藉由顯影,去除遮罩圖案不需要的光阻層。光阻所包含的黏著聚合物為鹼性顯影型的情況下,較佳係進行鹼處理,但不特別限定。鹼處理較佳係於25℃~35℃,在0.5%~1.5%之碳酸鈉水溶液浸漬最小顯影時間的1.5倍~2.5倍後水洗。By developing, the photoresist layer unnecessary for the mask pattern is removed. When the adhesive polymer contained in the photoresist is an alkaline developing type, it is preferable to perform an alkaline treatment, but it is not particularly limited. The alkali treatment is preferably at 25°C to 35°C, immersed in a 0.5% to 1.5% sodium carbonate aqueous solution 1.5 to 2.5 times the minimum development time and then washed with water.

藉由蝕刻,溶解並去除未被光阻層保護的銅以外之金屬、銅氧化物及銅。此去除的條件不特別限定,較佳係於20℃~60℃,浸漬於過氧化氫/鹽酸混合液、過氧化氫/硫酸混合液、20%~50%之氯化銅或氯化鐵水溶液等後水洗。以光阻層保護之包含銅以外之金屬的層、包含銅氧化物之層及銅形成複合銅佈線。將光阻層剝離前,可在複合銅佈線的藉由蝕刻形成之由銅構成的側面(例如第2圖的第三面為例示)進行形成銅氧化物層之處理、黑化處理、防鏽處理、耦合處理等,形成銅氧化物層、黑化處理層(黑色鉻酸鹽層)、防鏽劑層(包含苯并三唑類等)、耦合處理層(包含矽烷耦合劑等)等銅佈線保護層。或者,可進行將由銅構成的側面粗化之處理。By etching, dissolve and remove metals other than copper, copper oxide, and copper that are not protected by the photoresist layer. The conditions for this removal are not particularly limited. Preferably, it is immersed in hydrogen peroxide/hydrochloric acid mixed liquid, hydrogen peroxide/sulfuric acid mixed liquid, 20%-50% copper chloride or ferric chloride aqueous solution at 20℃~60℃ Wash with water after waiting. A layer containing a metal other than copper, a layer containing copper oxide, and copper protected by a photoresist layer form a composite copper wiring. Before the photoresist layer is peeled off, the copper oxide layer can be formed, blackened, and rust-prevented on the copper-made side surface of the composite copper wiring formed by etching (for example, the third surface in Figure 2 is an example) Treatment, coupling treatment, etc., forming copper oxide layer, blackening treatment layer (black chromate layer), rust inhibitor layer (including benzotriazole, etc.), coupling treatment layer (including silane coupling agent, etc.) Wiring protection layer. Alternatively, a process of roughening the side surface made of copper may be performed.

此外,可包含將蝕刻處理後之光阻層剝離的步驟。剝離方法不特別限定,光阻所包含的黏著聚合物為鹼性顯影型的情況下,較佳於40℃~60℃的1~5%之氫氧化鈉水溶液含浸180秒以內、120秒以內或90秒以內,藉此剝離光阻層後水洗。In addition, it may include a step of peeling off the photoresist layer after the etching process. The peeling method is not particularly limited. When the adhesive polymer contained in the photoresist is an alkaline developing type, it is preferably immersed in a 1-5% sodium hydroxide aqueous solution at 40°C to 60°C within 180 seconds, within 120 seconds, or Within 90 seconds, remove the photoresist layer and wash with water.

光阻層剝離後的形成有鍍敷層之表面的Rz較佳為1.0μm以下、0.9μm以下或0.8μm以下,且較佳為0.1μm以上、0.2μm以上或0.3μm以上。又,光阻層剝離後的形成有鍍敷層之表面的Rsm較佳為750nm以下、700nm以下、650nm以下、600nm以下、550nm以下、450nm以下或350nm以下,且較佳為100nm以上、200nm以上或300nm以上。光阻層剝離後的形成有鍍敷層之表面的Rz及Rsm藉由設為上述範圍,可得到與在下一步驟進一步積層之樹脂基材及阻焊劑等之密著性。The Rz of the surface on which the plating layer is formed after the photoresist layer is peeled off is preferably 1.0 μm or less, 0.9 μm or less, or 0.8 μm or less, and more preferably 0.1 μm or more, 0.2 μm or more, or 0.3 μm or more. In addition, the Rsm of the surface on which the plating layer is formed after the photoresist layer is stripped is preferably 750nm or less, 700nm or less, 650nm or less, 600nm or less, 550nm or less, 450nm or less, or 350nm or less, and preferably 100nm or more, 200nm or more Or more than 300nm. By setting the Rz and Rsm of the surface on which the plating layer is formed after the photoresist layer is peeled off, the adhesion with the resin substrate and the solder resist to be further laminated in the next step can be obtained by setting the Rz and Rsm in the above range.

剝離光阻層後,可在藉由蝕刻形成之複合銅佈線的由銅構成的側面(例如第2圖的第三面為例示)另進行形成銅氧化物層之處理、黑化處理、防鏽處理或/及耦合處理,形成銅氧化物層、黑化處理層(黑色鉻酸鹽層)、防鏽劑層(包含苯并三唑類等)、耦合處理層(包含矽烷耦合劑等)等銅佈線保護層。或者,可進行將由銅構成的側面粗化之處理。該等處理較佳係不影響複合銅佈線的包含銅以外之金屬的層及其表面的粗度、以及由銅構成的佈線與包含銅以外之金屬的層之間的導通。After the photoresist layer is peeled off, the copper oxide layer can be formed on the copper side of the composite copper wiring formed by etching (for example, the third surface in Figure 2 is an example), and the copper oxide layer can be formed, blackened, and rust-proof. Treatment or/and coupling treatment to form copper oxide layer, blackening treatment layer (black chromate layer), rust inhibitor layer (including benzotriazoles, etc.), coupling treatment layer (including silane coupling agent, etc.), etc. Copper wiring protective layer. Alternatively, a process of roughening the side surface made of copper may be performed. These treatments preferably do not affect the thickness of the layer containing a metal other than copper and the surface of the composite copper wiring, and the conduction between the wiring made of copper and the layer containing a metal other than copper.

剝離光阻層後,為了保護電路,可包含將形成絕緣膜之墨水即阻焊劑塗佈的步驟。較佳係除了裝接電子零件之部分以外塗佈阻焊劑。阻焊劑可舉出1)曝光並將未硬化部分以稀鹼顯影液顯影,藉此可形成微細圖案之鹼性顯影型阻焊劑;2)以網版印刷法印刷圖案,照射UV光(紫外線)藉此硬化之類型的UV硬化型阻焊劑;及3)以網版印刷法印刷圖案,藉由加熱而硬化之類型的阻焊劑即熱硬化型阻焊劑。After peeling off the photoresist layer, in order to protect the circuit, a step of applying a solder resist, which is an ink for forming an insulating film, may be included. Preferably, the solder resist is applied except for the part where the electronic component is attached. The solder resist can include 1) Expose and develop the unhardened part with a dilute alkali developer to form a fine pattern alkaline developing type solder resist; 2) Print the pattern by screen printing and irradiate UV light (ultraviolet rays) A type of UV-curing solder resist that is hardened by this; and 3) A type of solder resist that is hardened by heating by printing a pattern by a screen printing method, that is, a heat-curing solder resist.

對於未經阻焊劑處理之部分的形成有鍍敷層之表面,可包含焊接處理的步驟。藉由此步驟,可抑制形成電路之金屬的自然氧化,提升安裝電子零件時的焊接效率。For the surface where the plating layer is formed on the part that has not been processed by the solder resist, a soldering process may be included. Through this step, the natural oxidation of the metal forming the circuit can be suppressed, and the welding efficiency when mounting electronic parts can be improved.

焊接處理後,可另包含將電子零件焊接的步驟。After the soldering process, another step of soldering electronic parts may be included.

或者,剝離光阻層後,可包含在形成有鍍敷層之表面熱壓接樹脂基材,製作多層電路基板的步驟。Alternatively, after peeling off the photoresist layer, it may include a step of thermocompression bonding the resin base material on the surface on which the plating layer is formed to produce a multilayer circuit board.

<A.結構體> 1.製造結構體 實施例1、2及比較例1、2、3、5、6、7中,使用古河電工股份有限公司製之銅箔(DR-WS,厚度:18μm)作為結構體。實施例1使用光澤面(與相反面比較時為平坦之面:Rz=0.3μm)作為積層乾膜之面,實施例2使用非光澤面(與相反面比較時為粗糙之面:Rz=0.8μm)作為積層乾膜之面,比較例1~3、5使用光澤面作為積層乾膜之面,比較例6、7使用非光澤面作為積層乾膜之面。實施例3及比較例4使用CCL(Panasonic股份有限公司製,型號R5775,厚度:0.1mm)作為結構體,CCL係厚度18μm之H-VLP銅箔積層於預浸體R5670KJ的兩面。<A. Structure> 1. Manufacturing the structure In Examples 1, 2 and Comparative Examples 1, 2, 3, 5, 6, and 7, copper foil (DR-WS, thickness: 18 μm) manufactured by Furukawa Electric Co., Ltd. was used as the structure. Example 1 uses a glossy surface (flat surface when compared with the opposite surface: Rz=0.3μm) as the laminated dry film surface, and Example 2 uses a non-glossy surface (rough surface when compared with the opposite surface: Rz=0.8 μm) As the surface of the laminated dry film, Comparative Examples 1 to 3 and 5 used the glossy surface as the surface of the laminated dry film, and Comparative Examples 6 and 7 used the non-glossy surface as the surface of the laminated dry film. Example 3 and Comparative Example 4 used CCL (manufactured by Panasonic Co., Ltd., model R5775, thickness: 0.1 mm) as a structure, and a CCL-based H-VLP copper foil with a thickness of 18 μm was laminated on both sides of a prepreg R5670KJ.

(1)氧化處理 實施例1~3及比較例1、6、7中,將結構體於73℃浸漬於氧化劑(亞氯酸鈉60g/L;氫氧化鈉9g/L;KBM-403(3-環氧丙基氧丙基三甲氧基矽烷;信越Silicone公司製)2g/L)1.5分鐘,進行結構體之兩面的氧化處理。結構體在氧化處理後水洗並乾燥。 (2)電鍍處理 實施例1~3及比較例6、7中,之後使用鎳電鍍液(硫酸鎳240g/L;硼酸30g/L)於50℃以電流密度0.5A/dm2 之條件進行結構體之兩面的電鍍。實施例1通電35秒,實施例2通電50秒,實施例3通電40秒,比較例6通電35秒,比較例7通電70秒。結構體在電鍍處理後水洗並乾燥。(1) In the oxidation treatment of Examples 1 to 3 and Comparative Examples 1, 6, and 7, the structure was immersed in an oxidizing agent (sodium chlorite 60g/L; sodium hydroxide 9g/L; KBM-403 (3 -Glyoxypropyloxypropyltrimethoxysilane; Shin-Etsu Silicone Co., Ltd.) 2g/L) for 1.5 minutes to oxidize both sides of the structure. After the oxidation treatment, the structure is washed with water and dried. (2) Electroplating treatment in Examples 1 to 3 and Comparative Examples 6 and 7, then use nickel electroplating solution (nickel sulfate 240g/L; boric acid 30g/L) at 50°C and current density 0.5A/dm 2 for structure Electroplating on both sides of the body. Example 1 was energized for 35 seconds, Example 2 was energized for 50 seconds, Example 3 was energized for 40 seconds, Comparative Example 6 was energized for 35 seconds, and Comparative Example 7 was energized for 70 seconds. After the electroplating process, the structure is washed with water and dried.

關於實施例及比較例之結構體,分別以相同條件製作數個測試片(第1表)。 第1表 比較例7 銅箔 非光澤面 氧化鍍敷 9 60 2 73℃1.5分 240 30 1 70 82 0.80 612 51 1 0.57 0.57 1 比較例6 銅箔 非光澤面 氧化鍍敷 9 60 2 73℃1.5分 240 30 1 35 36 0.91 232 15 1 0.27 7 比較例5 銅箔 光澤面 有* 1.12 889 53 3 0.59 0.55 0 比較例4 CCL 0.73 745 58 3 0.59 10 CZ8101 比較例3 銅箔 光澤面 0.55 709 62 3 0.58 12 CZ8101 比較例2 銅箔 光澤面 0.55 718 63 3 0.28 12 比較例1 銅箔 光澤面 氧化 9 60 2 73℃1.5分 0.38 248 14 13 0.32 0.05 26 N.D. 實施例3 CCL 氧化鍍敷 9 60 2 73℃1.5分 240 30 1 40 41 0.65 320 24 0 0.64 0.64 0 實施例2 銅箔 非光澤面 氧化鍍敷 9 60 2 73℃1.5分 240 30 1 50 63 0.86 528 41 0 0.64 0.62 0 實施例1 銅箔 光澤面 氧化鍍敷 9 60 2 73℃1.5分 240 30 1 35 35 0.32 220 15 1 0.63 0.61 2         g/L g/L g/L g/L g/L A/dm2 軟性蝕刻處理 nm μm nm     kgf/cm kgf/cm Φ50點剝離數量(每64個) 佈線形成性(E.F. L/S=40/40) 佈線上的粗化處理 阻焊劑之膨脹(240℃) 錫膏之膨脹(240℃)   起始材料 評價面 材料表面處理 氫氧化鈉 亞氯酸鈉 3-環氧丙基氧丙基三甲氧基矽烷 硫酸鎳 硼酸 電流密度 處理時間[秒] Ni厚度 Rz RSm L* (C光源2o ) 耐熱變色(ΔE* ab) 常態 耐熱試驗後 氧化劑 處理條件 調配 剝離強度   氧化 處理 鍍敷 處理 DFR 形成前之評價 DFR 形成後之評價 佈線形 成後評價 *比較例5使用CZ-8101(MEC公司製)進行蝕刻處理以取代軟性蝕刻。Regarding the structures of Examples and Comparative Examples, several test pieces were produced under the same conditions (Table 1). Table 1 Comparative example 7 Copper foil Non-glossy Oxidation plating 9 60 2 73°C for 1.5 minutes 240 30 1 70 without 82 0.80 612 51 1 0.57 0.57 1 without without without Comparative example 6 Copper foil Non-glossy Oxidation plating 9 60 2 73°C for 1.5 minutes 240 30 1 35 Have 36 0.91 232 15 1 0.27 - 7 without Have Have Comparative example 5 Copper foil Glossy surface without - - - - - - - - Have* - 1.12 889 53 3 0.59 0.55 0 without Have Have Comparative example 4 CCL - without - - - - - - - - Have - 0.73 745 58 3 0.59 - 10 CZ8101 Have Have Comparative example 3 Copper foil Glossy surface without - - - - - - - - Have - 0.55 709 62 3 0.58 - 12 CZ8101 Have Have Comparative example 2 Copper foil Glossy surface without - - - - - - - - Have - 0.55 718 63 3 0.28 - 12 without Have Have Comparative example 1 Copper foil Glossy surface Oxidation 9 60 2 73°C for 1.5 minutes - - - - without - 0.38 248 14 13 0.32 0.05 26 ND without Have Have Example 3 CCL - Oxidation plating 9 60 2 73°C for 1.5 minutes 240 30 1 40 without 41 0.65 320 twenty four 0 0.64 0.64 0 without without without Example 2 Copper foil Non-glossy Oxidation plating 9 60 2 73°C for 1.5 minutes 240 30 1 50 without 63 0.86 528 41 0 0.64 0.62 0 without without without Example 1 Copper foil Glossy surface Oxidation plating 9 60 2 73°C for 1.5 minutes 240 30 1 35 without 35 0.32 220 15 1 0.63 0.61 2 without without without g/L g/L g/L - g/L g/L A/dm 2 - Soft etching treatment nm μm nm kgf/cm kgf/cm Φ50 point peeling quantity (each 64) Wiring formability (EF L/S=40/40) Coarse processing on wiring Expansion of solder resist (240℃) Swelling of solder paste (240℃) Starting material Evaluation surface Material surface treatment Sodium hydroxide Sodium chlorite 3-Glyoxypropyloxypropyltrimethoxysilane - Nickel Sulfate Boric acid Current density Processing time [sec] Ni thickness Rz RSm L * (C light source 2 o ) Heat-resistant discoloration (ΔE * ab) normal After heat resistance test Oxidant Processing conditions Deployment Peel strength Oxidation treatment Plating treatment Evaluation before DFR is formed Evaluation after DFR is formed Evaluation after wiring formation *Comparative Example 5 uses CZ-8101 (manufactured by MEC Corporation) for etching instead of soft etching.

2.測試片的評價(結果如第1表所示) 對於比較例2、3、4、6之測試片,對評價面塗佈過氧化氫1.8%;硫酸5%之水溶液,於25℃處理43秒,藉此進行軟性蝕刻處理後作評價。對於比較例5之測試片,使用有機酸系微蝕刻劑之MEC etch BOND CZ-8101(MEC股份有限公司製),以噴壓0.2MPa、時間30秒進行蝕刻處理後作評價。2. Evaluation of the test piece (results are shown in Table 1) For the test pieces of Comparative Examples 2, 3, 4, and 6, an aqueous solution of 1.8% hydrogen peroxide and 5% sulfuric acid was applied to the evaluation surface and treated at 25° C. for 43 seconds to perform a soft etching treatment for evaluation. For the test piece of Comparative Example 5, MEC etch BOND CZ-8101 (manufactured by MEC Co., Ltd.), which is an organic acid-based micro-etching agent, was used for evaluation after etching treatment at a spray pressure of 0.2 MPa for 30 seconds.

(1)Rz 對於實施例及比較例之測試片的貼附乾膜之面,由使用共軛焦掃描式電子顯微鏡OPTELICS H1200(Lasertec股份有限公司製)之觀察結果製作輪廓曲線,藉由JIS B 0601:2001規定之方法算出Rz。測定條件為掃描寬度100μm、掃描類型為Area、光源為藍光、Cut-off值為1/5。接物鏡x100、目鏡x14、數位變焦x1、Z間距設為10nm,取得3個位置之資料,Rz為3個位置之平均值。(1) Rz For the dry film-attached surface of the test pieces of the Examples and Comparative Examples, the contour curves were made from the observation results using a conjugate focus scanning electron microscope OPTELICS H1200 (manufactured by Lasertec Co., Ltd.), as specified in JIS B 0601:2001 The method to calculate Rz. The measurement conditions are the scan width of 100μm, the scan type is Area, the light source is blue light, and the Cut-off value is 1/5. Attach objective lens x100, eyepiece x14, digital zoom x1, and set Z pitch to 10nm, and obtain data at 3 positions, and Rz is the average of 3 positions.

(2)Rsm 以原子力顯微鏡(AFM:Atomic Force Microscope)觀察實施例及比較例之測試片的貼附乾膜之面,根據JIS R 1683:2007算出RSm。 裝置:日立High-Tech Science製 probe station AFM5000II 連接機種:AFM5300E 懸臂:SI-DF40 使用AFM5000II之自動設定機能來設定 (振幅衰減率、掃描頻率、I gain、P gain、A gain、S gain) 掃描區域:5μm見方 畫素數:512x512 測定模式:DFM 測定視野:5μm SIS模式:不使用 掃描器:20μm掃描器 測定方法:進行3次修正來測量。 ◆RSm:平均截面解析(lr=5μm)(2) Rsm The dry film-attached surface of the test pieces of the Examples and Comparative Examples were observed with an atomic force microscope (AFM: Atomic Force Microscope), and the RSm was calculated according to JIS R 1683:2007. Device: Hitachi High-Tech Science system probe station AFM5000II Connected model: AFM5300E Cantilever: SI-DF40 Use the automatic setting function of AFM5000II to set (Amplitude attenuation rate, scanning frequency, I gain, P gain, A gain, S gain) Scanning area: 5μm square Number of pixels: 512x512 Measurement mode: DFM Measuring field of view: 5μm SIS mode: not used Scanner: 20μm scanner Measurement method: Make 3 corrections to measure. ◆RSm: Analysis of average cross section (lr=5μm)

(3)明度L* 實施例及比較例之測試片的貼附乾膜之面於L* a* b* 色系中的明度L* 測定,係使用日本電色工業股份有限公司製的分光色差計NF999(照明條件:C;視角條件:2;測定項目:L* a* b* )來進行。(3) Lightness L *The dry film surface of the test piece of the example and the comparative example is measured on the lightness L * in the L* a * b * color system, using the spectral color difference manufactured by Nippon Denshoku Industries Co., Ltd. Calculate NF999 (lighting conditions: C; viewing angle conditions: 2; measurement items: L * a * b * ).

(4)鍍敷的厚度 實施例及比較例之測試片的貼附乾膜之面的鍍敷於垂直方向之平均厚度的測定方法,係將測試片溶解於12%硝酸,將所得之液體使用ICP發射光譜裝置5100 SVDV ICP-OES(Agilent Technologies公司製)分析並測定金屬的濃度,藉由考慮金屬密度、金屬層的表面積來算出層狀之金屬層的厚度。(4) Thickness of plating The method for measuring the average thickness of the plating in the vertical direction of the dry film surface of the test piece of the embodiment and the comparative example is to dissolve the test piece in 12% nitric acid, and use the ICP emission spectrometer 5100 SVDV ICP for the resulting liquid -OES (manufactured by Agilent Technologies) analyzes and measures the concentration of the metal, and calculates the thickness of the layered metal layer by considering the metal density and the surface area of the metal layer.

(5)耐熱性 對實施例及比較例之試片,藉由加熱造成之顏色變化來測試耐熱性。測定熱處理前之試片的色差(L*、a*、b*)後,放入225℃之烘箱30分鐘,測定熱處理後之試片的色差。由所得之值根據下式算出ΔE* ab。 數式2: ΔE* ab=[(ΔL* )2 +(Δa* )2 +(Δb* )2 ]1/2 (5) Heat resistance The test pieces of the examples and comparative examples were tested for heat resistance by the color change caused by heating. After measuring the color difference (L*, a*, b*) of the test piece before heat treatment, put it in an oven at 225°C for 30 minutes to measure the color difference of the test piece after heat treatment. Calculate ΔE* ab from the obtained value according to the following formula. Mathematical formula 2: ΔE * ab=[(ΔL * ) 2 +(Δa * ) 2 +(Δb * ) 2 ] 1/2

(6)與樹脂基材的剝離強度 對於實施例及比較例之測試片的貼附乾膜之面,積層預浸體R5670KJ(Panasonic公司製,厚度100μm),使用真空高壓壓製機,以加壓壓力2.9MPa、溫度210℃、壓製時間120分鐘之條件進行熱壓接。對於熱壓接後之測試片,一個保持原狀(常態),另一個於180℃之烘箱靜置48小時的耐熱測試後(耐熱測試後)作為測定試料。對於該等測定試料進行90°剝離測試(日本工業規格(JIS)C5016),測定剝離強度(kgf/cm)。 (7)潤濕性的穩定性 實施例及比較例之測試片的貼附乾膜之面的潤濕性係以與水之接觸角來確認。測定製作測試片時(第0天)及於25℃放置10天後之測試片的接觸角。具體而言係以接觸角計(DropMaster500)於室溫進行,以液體量1μmL測量60秒後的與水之接觸角。如第3圖所示,貼附乾膜之面的潤濕性在製作測試片後經過10天仍維持。此係表示貼附乾膜之面的表面粗度經過10天後仍不變化。(6) Peel strength with resin substrate For the dry film surface of the test pieces of the Examples and Comparative Examples, the laminated prepreg R5670KJ (manufactured by Panasonic, thickness 100μm) was used with a vacuum high-pressure press at a pressure of 2.9MPa, a temperature of 210°C, and a pressing time The condition of 120 minutes for thermocompression bonding. For the test piece after thermocompression bonding, one remains in its original state (normal state), and the other is placed in an oven at 180°C for 48 hours after the heat resistance test (after the heat resistance test) as the test sample. A 90° peel test (Japanese Industrial Standards (JIS) C5016) was performed on these measurement samples, and the peel strength (kgf/cm) was measured. (7) Stability of wettability The wettability of the dry film-attached surface of the test pieces of the examples and comparative examples was confirmed by the contact angle with water. Measure the contact angle of the test piece when the test piece is made (day 0) and after being placed at 25°C for 10 days. Specifically, it was performed with a contact angle meter (DropMaster500) at room temperature, and the contact angle with water after 60 seconds was measured with a liquid volume of 1 μmL. As shown in Figure 3, the wettability of the dry film-attached surface was maintained for 10 days after the test piece was made. This means that the surface roughness of the dry film surface does not change even after 10 days.

<B.積層體> (1)樹脂基材之熱壓接 對實施例1、2及比較例1~3、5~6之測試片的未貼附乾膜之面,積層預浸體R5670KJ(Panasonic公司製,厚度100μm),使用真空高壓壓製機,以加壓壓力2.9MPa、溫度210℃、壓製時間120分鐘之條件進行熱壓接。 (2)軟性蝕刻處理 對於比較例4之測試片及熱壓接樹脂基材後之比較例2、3、6之測試片的貼附乾膜之面,塗佈過氧化氫1.8%;硫酸5%之水溶液,於25℃處理43秒,藉此進行軟性蝕刻處理。對於比較例5之測試片,使用有機酸系微蝕刻劑之MEC etch BOND CZ-8101(MEC股份有限公司製)原液,以噴壓0.2MPa、時間30秒進行蝕刻處理。測試片係在蝕刻處理後水洗後乾燥。 (3)貼附乾膜 對於(1)及(2)之測試片,將乾膜AK3021(旭化成製)以滾輪溫度105℃、運送速度0.4m/min作貼附,得到實施例及比較例之積層體的測試片。<B. Multilayer body> (1) Thermal compression bonding of resin substrate The laminated prepreg R5670KJ (manufactured by Panasonic, thickness 100μm) of the test pieces of Examples 1, 2 and Comparative Examples 1 to 3, and 5 to 6 on the unattached surface of the test piece, used a vacuum high-pressure press to add The thermocompression bonding is performed under the conditions of a pressing pressure of 2.9 MPa, a temperature of 210° C., and a pressing time of 120 minutes. (2) Soft etching treatment For the test piece of Comparative Example 4 and the dry film surface of the test piece of Comparative Examples 2, 3, and 6 after thermocompression bonding of the resin substrate, apply 1.8% hydrogen peroxide; 5% sulfuric acid in water at 25 The temperature is processed for 43 seconds, thereby performing soft etching treatment. For the test piece of Comparative Example 5, MEC etch BOND CZ-8101 (manufactured by MEC Co., Ltd.) stock solution of an organic acid-based micro-etching agent was used for etching treatment at a spray pressure of 0.2 MPa for 30 seconds. The test piece was washed with water and dried after etching treatment. (3) Attach dry film For the test pieces of (1) and (2), dry film AK3021 (manufactured by Asahi Kasei) was attached at a roller temperature of 105° C. and a conveying speed of 0.4 m/min to obtain laminate test pieces of the Examples and Comparative Examples.

2.積層體的評價(結果如第1表所示) (1)DFR的剝離時間 對於貼附乾膜後之積層體,曝光以形成寬度45μm、長度5cm之DFR,將30℃之1質量%碳酸鈉水溶液以噴壓2kg/cm2 之條件進行顯影。顯影後,使用鹽酸1.3 mol/L;過氧化氫31.6 mol/L之水溶液,以於45℃、1.82m/min之速度條件進行蝕刻處理。蝕刻處理後,浸漬於氫氧化鈉3%水溶液(水溫40℃)之溶液,測定DFR完全剝離的時間。 (2)Φ50點(dot)剝離數量 對於積層體,曝光以形成數個Φ50μm之點狀DFR並顯影。顯影後,使用鹽酸1.3 mol/L;過氧化氫31.6 mol/L之水溶液,以於45℃、1.82m/min之速度條件進行蝕刻處理。蝕刻處理後,以CCD攝影機計算未被蝕刻而殘留的點之個數。若DFR未充分密著,則曝光顯影後DFR剝離,蝕刻處理後產生點的脫落。 (3)佈線形成性 對於積層體,曝光使佈線為L/S=40/40μm、長度5cm並顯影。顯影後,使用鹽酸1.3 mol/L;過氧化氫31.6 mol/L之水溶液,以於45℃、1.82m/min之速度條件進行蝕刻處理,藉此形成佈線。之後,浸漬於氫氧化鈉3%水溶液(水溫40℃)之溶液,剝離佈線上殘留的DFR。剝離DFR後,由測試片的SEM截面影像用以下式子算出蝕刻因子(etch factor)。第4圖顯示實施例2之SEM截面影像。蝕刻因子的數值越大則蝕刻精度良好,一般而言為約2.5~3.5的數值。由此指標將4.0以上作為○,未滿4.0作為╳。 數式3:

Figure 02_image005
蝕刻因子(E.F.)計算式 (4)與阻焊劑之密著性 對於貼附乾膜後之實施例及比較例的積層體,曝光使佈線為L/S=40/40μm、長度5cm並顯影。顯影後,使用鹽酸1.3 mol/L;過氧化氫31.6 mol/L之水溶液,以於45℃、1.82m/min之速度條件進行蝕刻處理,藉此形成佈線。之後,浸漬於氫氧化鈉3%水溶液(水溫40℃)之溶液,剝離佈線上殘留的DFR。在剝離後之佈線上塗佈液狀阻焊劑:APB-300(田村製作所),以DI曝光機於100mJ/cm2 之條件曝光並覆膜,藉此形成阻焊劑圖案。在未形成阻焊劑圖案之佈線上的0.5mm×2mm之開口部(亦稱表面處理部)塗佈助焊劑ES1100(千住金屬製),以氮驅氣1500ppm、240℃進行加熱處理。加熱處理後,以外觀觀察確認阻焊劑有無膨脹。 (5)與錫膏(solder paste)之密著性 對於貼附乾膜後之實施例及比較例的積層體,曝光使佈線為L/S=40/40μm、長度5cm並顯影。顯影後,使用鹽酸1.3 mol/L;過氧化氫31.6 mol/L之水溶液,以於45℃、1.82m/min之速度條件進行蝕刻處理,藉此形成佈線。之後,浸漬於氫氧化鈉3%水溶液(水溫40℃)之溶液,剝離佈線上殘留的DFR。比較例3、4在之後使用有機酸系微蝕刻劑之MEC etch BOND CZ-8101(MEC股份有限公司製),以原液、噴壓0.2MPa、時間30秒進行蝕刻處理。在佈線上塗佈液狀阻焊劑:APB-300(田村製作所),以DI曝光機於100mJ/cm2 之條件曝光並覆膜,藉此形成阻焊劑圖案。在未形成阻焊劑圖案之佈線上的0.5mm×2mm之開口部進行預焊(preflux)處理後,塗佈錫膏(千十金屬工業社製,型號RGS800)。之後,以氮驅氣1500ppm、240℃進行加熱處理。加熱處理後,以外觀觀察確認錫膏有無膨脹。2. Evaluation of the laminate (results are shown in Table 1) (1) DFR peeling time For the laminate after the dry film is attached, expose to form a DFR with a width of 45μm and a length of 5cm, and 1% by mass at 30°C The sodium carbonate aqueous solution was developed under the condition of spray pressure of 2kg/cm 2. After development, use an aqueous solution of hydrochloric acid 1.3 mol/L and hydrogen peroxide 31.6 mol/L to perform etching treatment at 45°C and a speed of 1.82 m/min. After the etching treatment, it was immersed in a solution of 3% sodium hydroxide aqueous solution (water temperature 40°C), and the time until DFR was completely peeled off was measured. (2) The number of Φ50 dots to be peeled off. The layered body is exposed to form several Φ50μm dot-shaped DFR and developed. After development, use an aqueous solution of hydrochloric acid 1.3 mol/L and hydrogen peroxide 31.6 mol/L to perform etching treatment at 45°C and a speed of 1.82 m/min. After the etching process, a CCD camera was used to count the number of dots remaining without being etched. If the DFR is not sufficiently adhered, the DFR will peel off after exposure and development, and dots will fall off after the etching process. (3) Wiring formability For the laminated body, the wiring is exposed to L/S=40/40μm and the length is 5cm and developed. After development, an aqueous solution of hydrochloric acid 1.3 mol/L and hydrogen peroxide 31.6 mol/L was used for etching at 45° C. and 1.82 m/min to form wiring. After that, it was immersed in a solution of 3% sodium hydroxide aqueous solution (water temperature 40°C), and the DFR remaining on the wiring was peeled off. After peeling off the DFR, the etch factor (etch factor) was calculated from the SEM cross-sectional image of the test piece using the following formula. Figure 4 shows the SEM cross-sectional image of Example 2. The larger the value of the etching factor, the better the etching accuracy, and it is generally about 2.5 to 3.5. From this index, 4.0 or more is regarded as ○, and less than 4.0 is regarded as ╳. Mathematical formula 3:
Figure 02_image005
Etching factor (EF) calculation formula (4) and adhesiveness of solder resist For the laminated body of the embodiment and the comparative example after the dry film is attached, the wiring is exposed to L/S=40/40μm and the length is 5cm and developed. After development, an aqueous solution of hydrochloric acid 1.3 mol/L and hydrogen peroxide 31.6 mol/L was used for etching at 45° C. and 1.82 m/min to form wiring. After that, it was immersed in a solution of 3% sodium hydroxide aqueous solution (water temperature 40°C), and the DFR remaining on the wiring was peeled off. Coat liquid solder resist: APB-300 (Tamura Manufacturing Co., Ltd.) on the stripped wiring, expose it with a DI exposure machine at 100mJ/cm 2 and cover it to form a solder resist pattern. Apply flux ES1100 (manufactured by Senju Metals) on the 0.5mm×2mm openings (also called surface treatment parts) on the wiring where the solder resist pattern is not formed, and heat it with nitrogen purging gas at 1500ppm and 240°C. After the heat treatment, the appearance of the solder resist was observed to confirm whether or not the solder resist had swelled. (5) Adhesion to solder paste For the laminates of the examples and comparative examples after the dry film is attached, the wiring is exposed to L/S=40/40μm and the length is 5cm and developed. After development, an aqueous solution of 1.3 mol/L hydrochloric acid and 31.6 mol/L hydrogen peroxide was used to perform etching treatment at 45° C. and 1.82 m/min to form wiring. After that, it was immersed in a solution of 3% sodium hydroxide aqueous solution (water temperature 40°C), and the DFR remaining on the wiring was peeled off. In Comparative Examples 3 and 4, MEC etch BOND CZ-8101 (manufactured by MEC Co., Ltd.), which is an organic acid-based micro-etching agent, was used to perform etching treatment with a stock solution at a spray pressure of 0.2 MPa for 30 seconds. Coat liquid solder resist: APB-300 (Tamura Manufacturing Co., Ltd.) on the wiring, expose and coat with a DI exposure machine at 100mJ/cm 2 to form a solder resist pattern. After preflux treatment is performed on the 0.5mm×2mm openings on the wiring where the solder resist pattern is not formed, a solder paste (manufactured by Senju Metal Industry Co., Ltd., model RGS800) is applied. After that, heat treatment was performed with nitrogen purging gas at 1500 ppm and 240°C. After the heat treatment, visually observe whether the solder paste has swelled or not.

3.總結 比較例1的ΔE* ab大,與樹脂之非密著面的包含氧化銅之層在加熱積層時氧化,形成脆弱層。因此,與DFR之接著力弱,DFR在途中剝離,故無法形成電路。比較例2~4即使進行軟性蝕刻處理,與DFR之接著力仍弱,產生點的脫落。又,如比較例3在積層後為了兼顧與DFR之密著性及剝離性而進行軟性蝕刻,另為了得到與阻焊劑等之密著性而在形成佈線後進行粗化處理等,需要階段性地對導體實施表面處理,使得步驟變多。比較例5中,與DFR之接著力太強,以蝕刻處理形成電路後,難以剝離DFR。比較例6中,因軟性蝕刻而有部分的鎳鍍剝離,故EF降低。鎳鍍層太厚亦使EF降低(比較例7)。另一方面,實施例1~3與DFR之接著力強,且以蝕刻處理形成電路後,可容易剝離DFR。並且EF亦良好。又,實施例1~3中,剝離DFR後,即使不進行任何表面處理亦有1)阻焊劑與形成有鎳鍍層之表面的密著性高,且2)焊料與形成有鎳鍍層之表面的密著性亦高。此外,導電體之銅箔部分與焊料之間亦可確認導通。3. Conclusion The ΔE * ab of Comparative Example 1 is large, and the copper oxide-containing layer on the non-adherent surface of the resin is oxidized when the laminate is heated to form a fragile layer. Therefore, the adhesion with DFR is weak, and DFR peels off on the way, so the circuit cannot be formed. In Comparative Examples 2 to 4, even if the soft etching treatment was performed, the adhesive force with DFR was still weak, and dots were dropped. Also, as in Comparative Example 3, after lamination, soft etching was performed in order to achieve both the adhesion and peelability with DFR, and the roughening treatment after wiring formation was required to obtain adhesion with solder resist, etc., which required stages. Surface treatment is applied to the conductor, which increases the number of steps. In Comparative Example 5, the adhesion to DFR was too strong, and it was difficult to peel off the DFR after the circuit was formed by the etching process. In Comparative Example 6, a part of the nickel plating was peeled off due to soft etching, so the EF was lowered. Too thick nickel plating also reduces EF (Comparative Example 7). On the other hand, the adhesion between Examples 1 to 3 and DFR is strong, and after the circuit is formed by the etching process, the DFR can be easily peeled off. And EF is also good. In addition, in Examples 1 to 3, after peeling off DFR, even without any surface treatment, there are 1) high adhesion between the solder resist and the surface on which the nickel plating layer is formed, and 2) the difference between the solder and the surface on which the nickel plating layer is formed. The adhesion is also high. In addition, continuity can also be confirmed between the copper foil part of the conductor and the solder.

產業利用性:根據本發明,可提供一種具有光阻層之積層體,適合於製作藉由曝光顯影及蝕刻來形成佈線之印刷佈線板。抑制曝光光線反射亦有助於形成藉由照光而硬化之阻焊劑層。又,與習知方法相比。在貼附乾膜前不需要軟性蝕刻的步驟,剝離DFR後不需要佈線表面處理(第1圖)故可降低製造印刷基板所需時間及費用。Industrial Applicability: According to the present invention, it is possible to provide a laminate with a photoresist layer, which is suitable for manufacturing printed wiring boards in which wiring is formed by exposure, development and etching. Suppressing the reflection of exposure light also helps to form a solder resist layer that is hardened by illumination. Also, compared with conventional methods. There is no need for a soft etching step before attaching the dry film, and no wiring surface treatment after the DFR is peeled off (Figure 1), so the time and cost for manufacturing the printed circuit board can be reduced.

1:第一面 2:第二面 3:第三面1: the first side 2: second side 3: third side

[第1圖]  顯示本發明之一實施態樣中包含複合銅佈線之印刷基板的製作步驟及一般印刷基板的製作步驟。 [第2圖]  顯示本發明之一實施態樣的複合銅佈線、將複合銅佈線積層於樹脂基材之單面的印刷基板、及將複合銅佈線積層於樹脂基材之雙面的印刷基板的截面概略圖。複合銅佈線係在由銅形成之佈線的第一面(1)具有包含銅以外之金屬的鍍敷層及包含銅氧化物之層。在與樹脂基材之熱壓接面的第二面(2)有無包含銅以外之金屬的鍍敷層及包含銅氧化物之層均可。第二面(2)可被銅粒子等粗化。第三面(3)可維持由銅形成之佈線,亦可具有銅氧化物層或防鏽層等銅佈線保護層。 [第3圖]  顯示本發明之一實施態樣的結構體中,形成有積層光阻層之鍍敷層的表面與水之接觸角的相對於時間之變化。 [第4圖]  由本發明的實施例2製作之光阻層剝離前的複合銅佈線經掃描式電子顯微鏡(SEM)之截面影像(上:3000倍,下:30000倍)。積層有光阻層之面存在有包含銅以外之金屬的鍍敷層及包含銅氧化物之層形成的微細凹凸。[Figure 1] Shows the manufacturing steps of a printed circuit board containing composite copper wiring and the manufacturing steps of a general printed circuit board in an embodiment of the present invention. [Figure 2] A composite copper wiring showing one embodiment of the present invention, a printed circuit board in which the composite copper wiring is laminated on one side of a resin substrate, and a printed circuit board in which the composite copper wiring is laminated on both sides of the resin substrate Schematic drawing of the cross-section. The composite copper wiring system has a plating layer containing a metal other than copper and a layer containing copper oxide on the first surface (1) of the wiring formed of copper. Whether there is a plating layer containing a metal other than copper or a layer containing copper oxide on the second surface (2) of the thermocompression bonding surface with the resin substrate. The second surface (2) can be roughened by copper particles. The third surface (3) can maintain the wiring formed by copper, and can also have a copper wiring protective layer such as a copper oxide layer or a rust-proof layer. [Figure 3] Shows the change with time in the contact angle between the surface of the plating layer on which the laminated photoresist layer is formed and the water in the structure of one embodiment of the present invention. [Figure 4] Scanning electron microscope (SEM) cross-sectional image of the composite copper wiring before stripping of the photoresist layer produced in Example 2 of the present invention (upper: 3000 times, lower: 30,000 times). The surface on which the photoresist layer is laminated has fine irregularities formed by a plating layer containing a metal other than copper and a layer containing copper oxide.

Claims (40)

一種複合銅佈線,係在具有第一面、第二面及第三面的由銅形成之佈線的該第一面,具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面形成有包含銅以外之金屬的第一鍍敷層。A composite copper wiring is provided on the first side of a wiring formed of copper having a first side, a second side, and a third side, and has a first copper oxide-containing layer, and the first copper oxide-containing layer A first plating layer containing a metal other than copper is formed on the surface. 如請求項1之複合銅佈線,其中,該由銅形成之佈線與該第一鍍敷層之間導通。The composite copper wiring of claim 1, wherein there is conduction between the wiring formed of copper and the first plating layer. 如請求項1或2之複合銅佈線,其中,在該第二面具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面形成有包含銅以外之金屬的第二鍍敷層。The composite copper wiring of claim 1 or 2, wherein a second copper oxide-containing layer is provided on the second surface, and the surface of the second copper oxide-containing layer is formed with a second plating containing a metal other than copper Cladding. 如請求項3之複合銅佈線,其中,該由銅形成之佈線與該第二鍍敷層之間導通。The composite copper wiring of claim 3, wherein the wiring formed of copper and the second plating layer are electrically connected. 如請求項1至4中任一項之複合銅佈線,其中,在該第三面具有銅佈線保護層,該銅佈線保護層係選自由銅氧化物層、黑化處理層、防鏽劑層及耦合處理層所組成之群組。The composite copper wiring according to any one of claims 1 to 4, wherein a copper wiring protective layer is provided on the third surface, and the copper wiring protective layer is selected from a copper oxide layer, a blackening treatment layer, and a rust inhibitor layer And a group of coupled processing layers. 一種印刷基板,係在如請求項1至5中任一項之複合銅佈線的第二面積層有樹脂基材。A printed substrate is provided with a resin base material in the second area layer of the composite copper wiring according to any one of claims 1 to 5. 如請求項6之印刷基板,其中,該第一面安裝有電子零件。Such as the printed circuit board of claim 6, wherein the first surface is mounted with electronic components. 一種積層體,具有結構體,該結構體的第一表面及第二表面係由銅構成之面,該結構體的該第一表面的一部分或全部具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第一鍍敷層,且該第一鍍敷層的一部分或全部的表面具有光阻層。A laminated body has a structure, the first surface and the second surface of the structure are surfaces made of copper, a part or all of the first surface of the structure has a first layer containing copper oxide, the first A part or all of the surface of a copper oxide-containing layer is formed with a first plating layer including a metal other than copper, and a part or all of the first plating layer has a photoresist layer on the surface. 如請求項8之積層體,其中,形成有該第一鍍敷層之表面的明度L* 之值為未滿50。 The layered body of claim 8, wherein the value of the lightness L* of the surface on which the first plating layer is formed is less than 50. 如請求項8或9之積層體,其中,於225℃熱處理30分鐘時,在熱處理前後所比較的形成有該第一鍍敷層之表面的顏色變化為10以下。The layered body of claim 8 or 9, wherein the color change of the surface on which the first plating layer is formed before and after the heat treatment is 10 or less when heat-treated at 225°C for 30 minutes. 如請求項8至10中任一項之積層體,其中,形成有該第一鍍敷層之表面的具有該光阻層之該一部分或全部的Rz為0.2μm以上且1.0μm以下。The laminate according to any one of claims 8 to 10, wherein the Rz of the part or all of the photoresist layer on the surface on which the first plating layer is formed is 0.2 μm or more and 1.0 μm or less. 如請求項8至11中任一項之積層體,其中,形成有該第一鍍敷層之表面的具有該光阻層之該一部分或全部的RSm為600nm以下。The laminate according to any one of claims 8 to 11, wherein the RSm of the part or all of the photoresist layer on the surface on which the first plating layer is formed is 600 nm or less. 如請求項8至12中任一項之積層體,其中,該第一鍍敷層包含鎳。The laminate according to any one of claims 8 to 12, wherein the first plating layer contains nickel. 如請求項8至13中任一項之積層體,其中,該第一鍍敷層的平均厚度為30nm以上且70nm以下。The laminate according to any one of claims 8 to 13, wherein the average thickness of the first plating layer is 30 nm or more and 70 nm or less. 如請求項8至14中任一項之積層體,其中,該光阻層為乾膜光阻、正型液狀光阻或負型液狀光阻。The laminate according to any one of claims 8 to 14, wherein the photoresist layer is a dry film photoresist, a positive liquid photoresist, or a negative liquid photoresist. 如請求項8至15中任一項之積層體,其中,該結構體為一片銅箔。The laminate according to any one of claims 8 to 15, wherein the structure is a piece of copper foil. 如請求項16之積層體,其中,該第二表面的一部分或全部具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第二鍍敷層。The laminate of claim 16, wherein a part or all of the second surface has a second copper oxide-containing layer, and a part or all of the surface of the second copper oxide-containing layer is formed with a metal other than copper The second plating layer. 如請求項17之積層體,其中,該第二鍍敷層之表面的一部分或全部具有樹脂基材。The laminate of claim 17, wherein a part or all of the surface of the second plating layer has a resin base material. 如請求項18之積層體,其中,該樹脂基材與該第二鍍敷層之間的剝離強度為0.5kgf/cm以上。The laminate of claim 18, wherein the peel strength between the resin substrate and the second plating layer is 0.5 kgf/cm or more. 如請求項18或19之積層體,其中,該樹脂基材含有選自聚苯醚、環氧樹脂、聚氧二甲苯、聚苯噁唑、聚四氟乙烯、液晶聚合物、亞磷酸三苯酯、氟樹脂、聚醚醯亞胺、聚醚醚酮、聚環烯烴、雙馬來醯亞胺樹脂、低電容率聚醯亞胺及氰酸樹脂所組成之群組中的至少一種絕緣性樹脂。The laminate of claim 18 or 19, wherein the resin base material contains selected from the group consisting of polyphenylene ether, epoxy resin, polyoxyxylene, polybenzoxazole, polytetrafluoroethylene, liquid crystal polymer, and triphenyl phosphite At least one insulating property from the group consisting of ester, fluororesin, polyether imide, polyether ether ketone, polycyclic olefin, bismaleimide resin, low permittivity polyimide and cyanate resin Resin. 如請求項8至15中任一項之積層體,其中,該結構體為貼銅層合板。The laminate according to any one of claims 8 to 15, wherein the structure is a copper-clad laminate. 一種積層體的製造方法,係對結構體進行,該結構體具有由銅構成之第一表面及第二表面,該第一表面的一部分或全部具有第一包含銅氧化物之層,該第一包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第一鍍敷層,該積層體的製造方法包含在該第一鍍敷層的一部分或全部的表面形成光阻層的步驟。A method for manufacturing a laminate is performed on a structure having a first surface and a second surface made of copper, a part or all of the first surface has a first layer containing copper oxide, the first A first plating layer containing a metal other than copper is formed on part or all of the surface of the layer containing copper oxide, and the manufacturing method of the laminate includes forming a photoresist layer on part or all of the surface of the first plating layer A step of. 如請求項22之積層體的製造方法,其中,形成有該第一鍍敷層之表面的明度L* 之值為未滿50。The method for manufacturing a laminate of claim 22, wherein the value of the lightness L* of the surface on which the first plating layer is formed is less than 50. 如請求項22或23之積層體的製造方法,其中,於225℃熱處理30分鐘時,在熱處理前後所比較的形成有該第一鍍敷層之表面的顏色變化為10以下。The method for manufacturing a laminate according to claim 22 or 23, wherein when the heat treatment is performed at 225° C. for 30 minutes, the color change of the surface on which the first plating layer is formed before and after the heat treatment is 10 or less. 如請求項22至24中任一項之積層體的製造方法,其中,該第一鍍敷層包含鎳。The method for manufacturing a laminate according to any one of claims 22 to 24, wherein the first plating layer contains nickel. 如請求項22至25中任一項之積層體的製造方法,其中,該第一鍍敷層的平均厚度為30nm以上且70nm以下。The method for manufacturing a laminate according to any one of claims 22 to 25, wherein the average thickness of the first plating layer is 30 nm or more and 70 nm or less. 如請求項22至26中任一項之積層體的製造方法,其中,該光阻層為乾膜光阻、正型液狀光阻或負型液狀光阻。The method for manufacturing a laminate according to any one of claims 22 to 26, wherein the photoresist layer is a dry film photoresist, a positive liquid photoresist, or a negative liquid photoresist. 如請求項22至27中任一項之積層體的製造方法,其中,不對形成有該第一鍍敷層之表面進行軟性蝕刻處理,該軟性蝕刻處理為拋光輪研磨、刷磨及化學研磨。The method for manufacturing a layered body according to any one of claims 22 to 27, wherein the surface on which the first plating layer is formed is not subjected to soft etching treatment, and the soft etching treatment is buff polishing, brush polishing, and chemical polishing. 如請求項22至28中任一項之積層體的製造方法,其中,該結構體為一片銅箔。The method for manufacturing a laminate according to any one of claims 22 to 28, wherein the structure is a piece of copper foil. 如請求項29之積層體的製造方法,其中,該結構體的該第二表面的一部分或全部具有第二包含銅氧化物之層,該第二包含銅氧化物之層的表面的一部分或全部形成有包含銅以外之金屬的第二鍍敷層。The method of manufacturing a laminate of claim 29, wherein a part or all of the second surface of the structure has a second copper oxide-containing layer, and a part or all of the surface of the second copper oxide-containing layer A second plating layer containing a metal other than copper is formed. 如請求項30之積層體的製造方法,其中,包含在形成有該第二鍍敷層之表面的一部分或全部積層樹脂基材的步驟。The method for manufacturing a laminate according to claim 30, which includes a step of laminating a resin base material on a part or all of the surface on which the second plating layer is formed. 如請求項31之積層體的製造方法,其中,該樹脂基材與該第二鍍敷層之間的剝離強度為0.5kgf/cm以上。The method for manufacturing a laminate according to claim 31, wherein the peel strength between the resin base material and the second plating layer is 0.5 kgf/cm or more. 如請求項31或32之積層體的製造方法,其中,該樹脂基材含有選自聚苯醚、環氧樹脂、聚氧二甲苯、聚苯噁唑、聚四氟乙烯、液晶聚合物、亞磷酸三苯酯、氟樹脂、聚醚醯亞胺、聚醚醚酮、聚環烯烴、雙馬來醯亞胺樹脂、低電容率聚醯亞胺及氰酸樹脂所組成之群組中的至少一種絕緣性樹脂。The method for manufacturing a laminate according to claim 31 or 32, wherein the resin base material contains selected from the group consisting of polyphenylene ether, epoxy resin, polyoxyxylene, polybenzoxazole, polytetrafluoroethylene, liquid crystal polymer, and At least one of the group consisting of triphenyl phosphate, fluororesin, polyether imine, polyether ether ketone, polycyclic olefin, bismaleimide resin, low permittivity polyimide and cyanate resin An insulating resin. 如請求項22至28中任一項之積層體的製造方法,其中,該結構體為貼銅層合板。The method for manufacturing a laminate according to any one of claims 22 to 28, wherein the structure is a copper-clad laminate. 如請求項31至34中任一項之積層體的製造方法,另包含: 對該光阻層的一部分照射光,顯影後,對該第一表面進行蝕刻處理,在該結構體形成佈線圖案的步驟;及 由該積層體剝離蝕刻處理後之該光阻層的步驟。For example, the method of manufacturing a laminate of any one of claims 31 to 34, which additionally includes: The step of irradiating a part of the photoresist layer with light and developing, etching the first surface to form a wiring pattern on the structure; and The step of peeling off the photoresist layer after the etching process from the laminate. 如請求項35之積層體的製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的Rz為0.2μm以上且1.0μm以下。The method for manufacturing a laminate according to claim 35, wherein Rz of the surface on which the first plating layer is formed after peeling off the photoresist layer is 0.2 μm or more and 1.0 μm or less. 如請求項35或36之積層體的製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的RSm為600nm以下。The method for manufacturing a laminate of claim 35 or 36, wherein the RSm of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 600 nm or less. 一種印刷基板的製造方法,包含: 對如請求項18至21中任一項之積層體的該光阻層的一部分照射光,顯影後,對該第一表面進行蝕刻處理,在該結構體形成佈線圖案的步驟;及 由該積層體剝離蝕刻處理後之該光阻層的步驟。A manufacturing method of a printed substrate, including: The step of irradiating a part of the photoresist layer of the laminated body according to any one of claims 18 to 21, and developing, etching the first surface to form a wiring pattern on the structure; and The step of peeling off the photoresist layer after the etching process from the laminate. 如請求項38之印刷基板的製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的Rz為0.2μm以上且1.0μm以下。The method of manufacturing a printed circuit board according to claim 38, wherein Rz of the surface on which the first plating layer is formed after peeling off the photoresist layer is 0.2 μm or more and 1.0 μm or less. 如請求項38或39之印刷基板的製造方法,其中,剝離該光阻層後的形成有該第一鍍敷層之表面的RSm為600nm以下。The method for manufacturing a printed circuit board according to claim 38 or 39, wherein the RSm of the surface on which the first plating layer is formed after the photoresist layer is peeled off is 600 nm or less.
TW110110405A 2020-03-24 2021-03-23 Composite copper wiring line and multilayer body having resist layer TW202136531A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020052151 2020-03-24
JP2020-052151 2020-03-24

Publications (1)

Publication Number Publication Date
TW202136531A true TW202136531A (en) 2021-10-01

Family

ID=77891761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110110405A TW202136531A (en) 2020-03-24 2021-03-23 Composite copper wiring line and multilayer body having resist layer

Country Status (5)

Country Link
JP (1) JPWO2021193470A1 (en)
KR (1) KR20220158220A (en)
CN (1) CN114982389A (en)
TW (1) TW202136531A (en)
WO (1) WO2021193470A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6120639A (en) * 1997-11-17 2000-09-19 Macdermid, Incorporated Method for the manufacture of printed circuit boards
JP6821370B2 (en) * 2016-09-29 2021-01-27 Jx金属株式会社 Metal foil with carrier, laminate, manufacturing method of laminate, manufacturing method of printed wiring board and manufacturing method of electronic equipment
CN111344435A (en) * 2017-11-10 2020-06-26 纳美仕有限公司 Composite copper foil

Also Published As

Publication number Publication date
WO2021193470A1 (en) 2021-09-30
JPWO2021193470A1 (en) 2021-09-30
KR20220158220A (en) 2022-11-30
CN114982389A (en) 2022-08-30

Similar Documents

Publication Publication Date Title
JP6779187B2 (en) Copper foil with carrier and its manufacturing method, and coreless support with wiring layer and printed wiring board manufacturing method
KR101268145B1 (en) Method for surface treatment of copper and copper
JP4029517B2 (en) WIRING BOARD, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE
CN1841686A (en) Method for producing flexible printed wiring board, and flexible printed wiring board
JP2006196548A (en) Flexible printed wiring board and multilayer flexible printed wiring board, portable telephone terminal using same
TW202226911A (en) Copper member, conductor for printed wiring board, member for printed wiring board, printed wiring board, printed circuit board, and manufacturing methods therefor
TW202134053A (en) Composite copper member having voids
US20230142375A1 (en) Composite copper components
WO2022224684A1 (en) Copper member
TW202136531A (en) Composite copper wiring line and multilayer body having resist layer
TW202316919A (en) Metal member
KR20060048413A (en) Resin surface treating agent and resin surface treatment
WO2022202921A1 (en) Method for manufacturing laminate
US20240179849A1 (en) Laminate for wiring board
WO2022224683A1 (en) System for producing composite copper member
WO2022050001A1 (en) Copper foil and laminate, and manufacturing methods therefor
WO2021200810A1 (en) Ceramic circuit board with resist cured film, manufacturing method therefor, and ceramic circuit board manufacturing method
JP2004259937A (en) Method for manufacturing multilayer printed wiring board, and the board obtained from the method
CN113630979A (en) Manufacturing method of flexible circuit board
TW201204208A (en) Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards