TW202135616A - Semiconductor manufacturing device characterized by using the giving mechanisms to give tension to the film, thereby reducing the wrinkles of the film - Google Patents

Abstract

According to one embodiment, a semiconductor manufacturing device having a bonding tool, a heating portion, a first giving mechanism and a second giving mechanism is provided. The bonding tool is used to suck a semiconductor chip via a film. The heating portion is used to heat the semiconductor chip. The first giving mechanism is disposed, relative to the bonding tool, on the upstream side of the feeding direction of the film and gives tension to the film. The second giving mechanism is disposed, relative to the bonding tool, on the downstream side of the feeding direction of the film and gives tension to the film.

Description

Semiconductor manufacturing equipment

This embodiment relates to a semiconductor manufacturing apparatus. Citation of related applications This application is entitled to the priority right of the Japanese patent application number 2020-044334 filed on March 13, 2020, and the entire content of the Japanese patent application is used in this application.

In semiconductor manufacturing equipment for bonding semiconductor wafers, a film is interposed between the surface of the bonding tool and the semiconductor wafer, and the bonding tool pushes the semiconductor wafer through the film, thereby bonding through a plurality of bump electrodes. In the case of the substrate. At this time, it is best to perform bonding appropriately.

One embodiment is to provide a semiconductor manufacturing apparatus that can perform bonding appropriately.

The bonding tool of the semiconductor manufacturing apparatus of the embodiment sucks the semiconductor wafer through the thin film. The heating part heats the semiconductor wafer. The first applying mechanism is arranged on the upstream side of the feeding direction of the film with respect to the bonding tool. The first applying mechanism is to apply tension to the film. The second applying mechanism is arranged on the downstream side of the feeding direction of the film with respect to the bonding tool. The second applying mechanism is to apply tension to the film.

According to the above-mentioned configuration, it is possible to provide a semiconductor manufacturing apparatus having a bonding tool, a heating unit, a first applying mechanism, and a second applying mechanism.

Hereinafter, the semiconductor manufacturing apparatus of the embodiment will be described in detail with reference to the drawings. In addition, the present invention is not limited by this embodiment.

(Implementation form) The semiconductor manufacturing apparatus of the embodiment performs thermal compression bonding (bonding) of a semiconductor wafer to a wiring board by filling a plurality of bump electrodes in the gap with an adhesive resin (underfill) to form a flip chip of a semiconductor device (flip chip) installation. The semiconductor manufacturing apparatus performs FAB (Film Assist Bonding) in which a thin film is interposed between the back surface of the semiconductor wafer (the back surface opposite to the surface on which the circuit is applied) and a thermal compression bonding tool (hereinafter referred to as a bonding tool). Thereby, the adhesive resin extruded from the outer shape of the wafer during thermocompression bonding does not adhere to the bonding tool.

In FAB, the thin film between the bonding tool and the semiconductor wafer during flip chip may wrinkle in the thin film due to the heat of the bonding tool. The adhesive resin extruded from the outer shape of the wafer spreads to the wrinkles of the film, and there are cases where it emerges remarkably. That is, in flip-chip mounting using FAB, on the substrate on the outer periphery of the chip, because of the wrinkles of the film, a part of the adhesive resin is generated on the substrate (fillet) (hereinafter referred to as the emergent tape). ). A ribbon is formed in an island shape at a place separated from the wafer (hereinafter referred to as an island ribbon). In other words, the out-of-island ribbons emerging from the places separated from the wafers are produced in the places where the adhesive resin spreads on the surface of the film and the substrate while the film hangs down and is in contact with the substrate. Therefore, stable extrusion of the adhesive resin may not be achieved, chip peeling may occur, or the adhesive resin may contaminate adjacent wafers or adjacent parts and cause defects.

Therefore, in this embodiment, the semiconductor manufacturing apparatus is provided with a mechanism for applying tension to the film to each of the upstream and downstream sides of the bonding tool when the bonding tool pushes the semiconductor wafer through the film. Seek to reduce the wrinkles of the film.

Specifically, in the semiconductor manufacturing equipment, the bonding tool is provided with: a mechanism for applying tension to the film on the upstream side of the film feeding direction, and a mechanism for applying tension to the film on the downstream side of the film feeding direction . In the semiconductor manufacturing apparatus, in the first bonding, the semiconductor wafer is adsorbed to the bonding tool via the thin film, the semiconductor wafer is brought into contact with the substrate placed on the platform, and the semiconductor wafer is heated via the platform and the substrate. In the semiconductor manufacturing apparatus, when the film starts to stretch by heating, the upstream side applying mechanism and the downstream side applying mechanism are controlled so that the tension of the film is maintained within a desired range. At this time, the semiconductor manufacturing equipment obtains the upstream elongation of the film by heating according to the operation amount of the upstream applying mechanism, and obtains the downstream of the heated film according to the operation amount of the downstream applying mechanism The amount of elongation on the side. Then, the semiconductor manufacturing apparatus releases the suction of the semiconductor wafer based on the suction structure for the wafer, moves the bonding tool away from the platform, releases the suction of the thin film based on the suction structure for the thin film, and transports the film. The semiconductor manufacturing apparatus is a device for attaching a semiconductor wafer to a bonding tool through a thin film during the second and subsequent bonding, bringing the semiconductor wafer into contact with a substrate placed on a platform, and heating a conductor through the platform and the substrate. At this time, the semiconductor manufacturing equipment starts to stretch the film by heating, and feeds forward the upstream imparting mechanism with the movement amount corresponding to the upstream stretch obtained in the first bonding. , The feed mechanism on the downstream side is fed forward with the amount of movement corresponding to the amount of elongation on the downstream side obtained in the first joining. Then, the semiconductor manufacturing apparatus releases the suction of the semiconductor wafer based on the suction structure for the wafer, moves the bonding tool away from the platform, releases the suction of the thin film based on the suction structure for the thin film, and transports the film. With this, in the second and subsequent bonding, the feed-forward operation of the imparting mechanism corresponding to the respective elongation on the upstream and downstream sides obtained in the first bonding is performed, so that the upstream side of the bonding tool can be targeted. And each of the downstream side to maintain the tension of the film within the desired range. As a result, the wrinkles of the film at the time of bonding can be reduced.

More specifically, the semiconductor manufacturing apparatus 1 can be configured as shown in FIG. 1. FIG. 1 is a diagram showing the structure of a semiconductor manufacturing apparatus 1.

The semiconductor manufacturing apparatus 1 has: a platform 10, a bonding tool 20, a controller 30, a drive mechanism 41, a drive mechanism 42, a delivery reel 51, a take-up reel 52, a film 53, an application mechanism 70, an application mechanism 80, and a temperature sensor. The sensor 61, the pressure sensor 62, and the exhaust system 90. The providing mechanism 70 has a movable roller 71, a roller 72, a movable pressure feed roller 75, a pressure feed roller 73, a pressing member 74, a driving mechanism 76, and a driving mechanism 77. The providing mechanism 80 has a movable roller 81, a roller 82, a movable pressure feed roller 83, a pressure feed roller 84, a pressing member 85, a drive mechanism 86, and a drive mechanism 87. The exhaust system 90 has an exhaust pipe 91 and a vacuum device 92. Hereinafter, the direction perpendicular to the main surface 10a of the stage 10 is referred to as the Z direction, and the two directions orthogonal to each other in the plane perpendicular to the Z direction are referred to as the X direction and the Y direction.

The stage 10 has a needle portion 11 arranged in an area on the -Y side of the surface 10a, and a substrate 100 is placed on an area on the +Y side of the surface 10a. Moreover, even if the needle part 11 is not arrange|positioned on the platform 10, the unit of the platform 10 and the needle part may be different. The substrate 100 is also referred to as a wiring substrate or a printed circuit board (PCB). The substrate 100 is placed on the surface 10a of the platform 10, and has an SR (solder resist) opening of the substrate at a position corresponding to the bump electrode of the semiconductor wafer on the surface 100a. The surface 100 a is the main surface on the +Z side of the substrate 100. On the bottom surface of the SR opening, the wiring for bump electrodes to be bonded to the semiconductor wafer is arranged. The surface 100 a of the substrate 100, the bottom surface of the SR opening of the substrate, and the wiring are partially covered with an adhesive resin (underfill) 110. The adhesive resin 110 may be, for example, NCP (Non Conducting Paste) or NCF (Non Conducting Film). In addition, in the NCF, instead of partially covering the substrate side, it may cover the wafer surface (full surface) on which the electrode on the semiconductor wafer side is applied in advance.

Inside the platform 10 is a heating element (heating part) 12 in which a heater or the like is embedded. The heating element 12 heats the substrate 100 via the platform 10 according to the control of the controller 30, and heats the semiconductor wafer 200 via the substrate 100 when the semiconductor wafer 200 is bonded to the substrate 100. In addition, the heating element (heating part) may be embedded in the bonding head 2 instead of the platform 10.

The bonding tool 20 sucks and fixes the semiconductor wafer 200. The bonding tool 20 is held by suction or the like by the bonding head 2 arranged on the +Z side. The bonding tool 20 is larger in size than the semiconductor wafer, and has a suction structure in which the absorbable film 53 is provided at an outer peripheral position larger than the size of the semiconductor wafer 200.

The bonding tool 20 has a base portion 21 and a protrusion 22. The bonding tool 20 may be subjected to cutting processing or the like from a single material, so as to have the base portion 21 and the protrusion 22. In this case, the base 21 and the protrusion 22 are an integrated tool.

The base portion 21 has a plate shape extending in the XY direction. The base 21 may have a substantially rectangular shape in the XY plane. The protruding portion 22 swells in a pedestal shape on the surface of the base portion 21. The surface of the base portion 21 is the main surface on the −Z side of the base portion 21.

The protrusion 22 is an area including the center of the surface of the base 21 and may be fixed to the surface of the base 21. The protrusion 22 may have a substantially rectangular shape in an XY plane view. The protrusion 22 has a surface, a suction structure 23, and a suction structure 24. The surface of the protrusion 22 is the main surface on the −Z side of the protrusion 22.

The adsorption structure 23 has adsorption holes 23a and exhaust holes 23b. The suction hole 23 a is arranged near the center of the surface of the protrusion 22. The exhaust hole 23b extends in the Z direction, so that the suction hole 23a is connected to the exhaust hole 2a of the bonding head 2. The suction structure 23 may have a plurality of suction holes 23 a near the center of the surface of the protrusion 22.

The adsorption structure 24 has a plurality of adsorption holes 24a and exhaust holes 24b and 24c. Each suction hole 24 a is arranged outside the suction hole 23 a on the surface of the protrusion 22. The exhaust hole 24b extends in the XY direction, so that the suction hole 24a is connected to the exhaust hole 24c. The vent hole 24c extends in the Z direction, and the vent hole 24b is connected to the vent hole 2a of the bonding head 2. The exhaust hole 24 c of the adsorption structure 24 may be shared with the exhaust hole 23 b of the adsorption structure 23.

The driving mechanism 41 and the driving mechanism 42 are controlled by the controller 30 to relatively move the platform 10 and the bonding tool 20 in the X direction, the Y direction, and the Z direction. For example, the driving mechanism 41 can move the platform 10 in the X direction and the Y direction according to the control of the controller 30. The driving mechanism 42 can also move the platform 10 in the Z direction according to the control of the controller 30.

The sending spool 51 is arranged on the -Y side of the bonding tool 20. The winding reel 52 is arranged on the +Y side of the joining tool 20. The film 53 is sent from the delivery reel 51 to the +Y side, passes through the -Z side of the surface of the protrusion 22 of the bonding tool 20 (the surface on the -Z side), and advances to the +Y side, and the winding reel 52 is used Take-up. That is, the film 53 is provided in a state where the film 53 is interposed on the surface of the protrusion 22 of the bonding tool 20. This prevents the adhesive resin 110 from adhering to the surface of the protrusion 22 of the bonding tool 20.

The delivery reel 51 winds a film 53 that is not used for bonding. The sending reel 51 can send out the film 53 according to the control of the controller 30. The take-up reel 52 can take up the film 53 according to the control of the controller 30. The take-up reel 52 is used to take up the film 53 after the installation of each semiconductor wafer is completed. The film 53 is sandwiched between the surface of the protrusion 22 of the bonding tool 20 and the semiconductor wafer 200 to prevent the adhesive resin 110 from adhering to the surface of the protrusion 22 of the bonding tool 20 when the semiconductor wafer 200 is mounted on the substrate 100.

The providing mechanism 70 is arranged on the upstream side of the feeding direction of the film 53 with respect to the bonding tool 20 and is arranged between the delivery reel 51 and the bonding tool 20. The applying mechanism 70 applies tension to the film 53. The applying mechanism 70 partially moves the film 53 to a direction approaching or away from the contact point of the film 53 to apply tension to the film 53. The applying mechanism 70 winds the film 53 in a direction opposite to the feeding direction of the film 53 and applies tension to the film 53.

The providing mechanism 70 has a movable roller 71, a roller 72, a movable pressure feed roller 75, a pressure feed roller 73, a pressing member 74, a driving mechanism 76, a driving mechanism 77, and a driving mechanism 78.

The movable roller 71 is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feeding direction of the film 53 with respect to the surface of the protrusion 22. The movable roller 71 can contact the film 53 from the +Y side. The drive mechanism 76 is, for example, a linear motor, and can move the rotation axis of the movable roller 71 in the +Y direction and the -Y direction according to the control from the controller 30, as shown by a one-dot chain arrow. That is, the driving mechanism 76 can move (horizontally drive) the rotation axis of the movable roller 71 to the approaching direction (-Y direction) and the deviating direction (+Y direction) to the contact point of the film 53. Thereby, the movable roller 71 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the contact point to the film 53. In addition, the movable roller 71 rotates passively by receiving stress in the direction along the surface of the film 53 with regard to whether it is rotated or not.

The roller 72 is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feed direction of the film 53 with respect to the movable roller 71. The roller 72 can contact the film 53 from the -Y side. The position of the roller 72 as a rotating shaft will be fixed. The roller 72 receives the stress in the direction along the surface of the film 53 and rotates passively.

The movable pressure feed roller 75 is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feed direction of the film 53 with respect to the roller 72. The movable nip roller 75 can contact the film 53 from the -Z side. The position of the rotating shaft of the movable nip roller 75 is fixed. The driving mechanism 77 is, for example, a rotary motor, and can rotationally drive the movable pressure feed roller 75 in a rotation direction corresponding to the opposite direction of the feeding direction (counterclockwise rotation in the YZ plane). Thereby, the movable nip roller 75 can adjust the stress acting on the upstream side of the film 53 in the direction along the surface of the film 53.

The nip roller 73 is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feed direction of the film 53 with respect to the roller 72. The nip roller 73 can contact the film 53 from the +Z side. The position of the nip roller 73 as a rotating shaft is fixed. The nip roller 73 sandwiches the film 53 therebetween and is arranged on the opposite side of the movable nip roller 75, and has a clearance between the movable nip roller 75 and the movable nip roller 75 where the film 53 becomes non-contact.

The pressing member 74 is arranged on the -Y side of the bonding tool 20 and on the +Z side of the nip roller 73. The pressing member 74 is located away from the nip roller 73 to the +Z side. The driving mechanism 78 is, for example, a linear motor, and can push and drive the pressing member 74 to the -Z side.

In a steady state, the drive mechanism 76 releases the horizontal drive of the rotation axis of the movable roller 71, and the position of the rotation axis of the movable roller 71 is constant. The driving mechanism 78 releases the pressing and driving of the pressing member 74 to the −Z side, and the nip roller 73 and the movable nip roller 75 have an interval where the film 53 becomes non-contact. The drive mechanism 77 releases the rotational drive of the movable pressure feed roller 75, and the movable pressure feed roller 75 is capable of passively rotating in a rotation direction (clockwise rotation as viewed in the YZ plane) corresponding to the feeding direction of the film 53.

When the semiconductor wafer 200 is heated by the heating element 12 during bonding of the semiconductor wafer 200, the drive mechanism 76 moves (horizontally drives) the rotation axis of the movable roller 71 in the −Y direction or the +Y direction. Thereby, the movable roller 71 can adjust the stress acting on the film 53 in the direction perpendicular to the surface of the film 53. The driving mechanism 78 pushes and drives the pressing member 74 to the -Z side. Thereby, the pressing member 74 presses the pressing roller 73 to the -Z side, and the pressing roller 73 and the movable pressing roller 75 can press the film 53 from both sides in the Z direction. The driving mechanism 77 is for rotationally driving the movable pressure feed roller 75 in a rotation direction corresponding to the opposite direction of the feeding direction. Thereby, the movable nip roller 75 can adjust the stress acting on the upstream side of the film 53 in the direction along the surface of the film 53.

For example, the controller 30 controls the drive mechanism 76 and monitors the drive torque based on the drive mechanism 77 in such a way that the Y position of the movable roller 71 forms the middle of the movable limit position in the -Y direction and the movable limit position in the +Y direction. . The controller 30 is a table indicating the relationship between the control amount of the drive mechanism 77 and the drive torque, which is experimentally determined and set in advance, and the drive torque can be obtained and monitored from the control amount of the drive mechanism 77 and the table. The controller 30 estimates the tension of the film 53 on the upstream side (-Y side) of the bonding tool 20 based on the driving torque. The controller 30 operates the drive mechanism 77 in such a way that the estimated tension will be within a desired range. At this time, the controller 30 obtains the elongation of the film 53 based on the diameter of the movable pressure feed roller 75 and the rotation angle of the movable pressure feed roller 75. If the diameter of the movable pressure _{feed roller 75 is set to d 75} , the circumference ratio is set to π, and the rotation angle is set to θ ₇₅ (°), the controller 30 can also calculate the film 53 by the following equation 1. The amount of elongation on the upstream side of ΔL ₇₀ . ΔL ₇₀ =d ₇₅ ×π×(θ ₇₅ /360°)･･･Equation 1

The providing mechanism 80 is arranged on the downstream side of the feeding direction of the film 53 with respect to the bonding tool 20, and is arranged between the bonding tool 20 and the winding reel 52. The applying mechanism 80 applies tension to the film 53. The applying mechanism 80 partially moves the film 53 to a direction approaching or away from the contact point of the film 53 to apply tension to the film 53. The applying mechanism 80 winds the film 53 in the feeding direction of the film 53 and applies tension to the film 53.

The providing mechanism 80 has a movable roller 81, a roller 82, a movable nip roller 85, a nip roller 83, a pressing member 84, a driving mechanism 86, a driving mechanism 87, and a driving mechanism 88.

The movable roller 81 is arranged on the −Y side of the bonding tool 20 and is arranged on the downstream side of the feeding direction of the film 53 with respect to the surface of the protrusion 22. The movable roller 81 can contact the film 53 from the -Y side. The driving mechanism 86 is, for example, a linear motor, and can move the rotation axis of the movable roller 81 in the +Y direction and the -Y direction according to the control from the controller 30, as shown by a one-dot chain arrow. That is, the driving mechanism 86 can move (horizontally drive) the rotation axis of the movable roller 81 to the approaching direction (+Y direction) and the away direction (-Y direction) to the contact point of the film 53. Thereby, the movable roller 81 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the contact point to the film 53. In addition, the movable roller 81 is rotated passively by receiving the stress in the direction along the surface of the film 53 with regard to whether the rotation thereof is not driven.

The roller 82 is arranged on the +Y side of the bonding tool 20 and is arranged on the downstream side of the feed direction of the film 53 with respect to the movable roller 81. The roller 82 can contact the film 53 from the +Y side. The position of the roller 82 as a rotating shaft will be fixed. The roller 82 receives the stress in the direction along the surface of the film 53 and rotates passively.

The movable pressure feed roller 85 is arranged on the +Y side of the bonding tool 20 and is arranged on the downstream side in the feeding direction of the film 53 with respect to the roller 82. The movable nip roller 85 can contact the film 53 from the -Z side. The position of the rotating shaft of the movable nip roller 85 is fixed. The driving mechanism 87 is, for example, a rotary motor, and can rotationally drive the movable pressure feed roller 85 in a rotation direction corresponding to the feeding direction (clockwise rotation in the YZ plane). Thereby, the movable nip roller 85 can adjust the stress acting on the downstream side of the film 53 in the direction along the surface of the film 53.

The nip roller 83 is arranged on the +Y side of the bonding tool 20 and is arranged on the downstream side in the feeding direction of the film 53 with respect to the roller 82. The nip roller 83 can contact the film 53 from the +Z side. The position of the nip roller 83 as a rotating shaft is fixed. The nip roller 83 is arranged on the opposite side of the movable nip roller 85 with the film 53 sandwiched therebetween, and there is a space between the movable nip roller 85 and the movable nip roller 85 where the film 53 becomes non-contact.

The pressing member 84 is arranged on the +Y side of the bonding tool 20 and on the +Z side of the nip roller 83. The pressing member 84 is located away from the nip roller 83 to the +Z side. The driving mechanism 88 is, for example, a linear motor, and can push and drive the pressing member 84 to the -Z side.

In a steady state, the drive mechanism 86 releases the horizontal drive of the rotation axis of the movable roller 81, and the position of the rotation axis of the movable roller 81 is constant. The driving mechanism 88 releases the pressing and driving of the pressing member 84 to the -Z side, and the nip roller 83 has a space between the movable nip roller 85 and the film 53 to become non-contact. The driving mechanism 87 releases the rotational drive of the movable pressure feed roller 85, and the movable pressure feed roller 85 is capable of passively rotating in a rotation direction (clockwise rotation as viewed in the YZ plane) corresponding to the feeding direction of the film 53.

At the time of heating by the heating element 12 during the bonding of the semiconductor wafer 200, the drive mechanism 86 moves (horizontally drives) the rotation axis of the movable roller 81 in the −Y direction or the +Y direction. Thereby, the movable roller 81 can adjust the stress acting on the film 53 in the direction perpendicular to the surface of the film 53. The driving mechanism 88 pushes and drives the pressing member 84 to the -Z side. Thereby, the pressing member 84 presses the pressing roller 83 to the -Z side, and the pressing roller 83 and the movable pressing roller 85 can press the film 53 from both sides in the Z direction. The driving mechanism 87 drives the movable nip roller 85 to rotate in a rotation direction corresponding to the feeding direction. Thereby, the movable nip roller 85 can adjust the stress acting on the downstream side of the film 53 in the direction along the surface of the film 53.

For example, the controller 30 controls the drive mechanism 86 and monitors the drive torque based on the drive mechanism 87 in such a manner that the Y position of the movable roller 81 forms the middle of the movable limit position in the -Y direction and the movable limit position in the +Y direction. . The controller 30 is a table indicating the relationship between the control amount of the drive mechanism 87 and the drive torque, which is experimentally determined and set in advance, and the drive torque can be obtained and monitored from the control amount of the drive mechanism 87 and the table. The controller 30 stacks the tension of the film 53 on the downstream side (-Y side) of the bonding tool 20 based on the driving torque. The controller 30 operates the drive mechanism 87 in such a way that the estimated tension will be within a desired range. At this time, the controller 30 obtains the elongation of the film 53 based on the diameter of the movable pressure feed roller 85 and the rotation angle of the movable pressure feed roller 85. If the diameter of the movable pressure _{feed roller 85 is set to d 85} , the circumference ratio is set to π, and the rotation angle is set to θ ₈₅ (°), the controller 30 can also calculate the film 53 by the following equation 2. The elongation on the downstream side of ΔL ₈₀ . ΔL ₈₀ = d ₈₅ ×π×(θ ₈₅ /360°)･･･Formula 2

The temperature sensor 61 can be arranged on the surface of the bonding head 2 holding the bonding tool 20. In addition, it may be embedded in the bonding tool 20. The temperature sensor 61 detects the temperature of the bonding tool 20 and supplies the detection result to the controller 30.

The pressure sensor 62 is arranged in the bonding tool 20 or the bonding head 2. The pressure sensor 62 detects the pressure applied from the bonding tool 20 to the semiconductor wafer 200 when the bonding tool 20 sucks and fixes the semiconductor wafer 200 and supplies the detection result to the controller 30.

The exhaust system 90 has an exhaust pipe 91 and a vacuum device 92. The exhaust pipe 91 is arranged between the bonding head 2 and the vacuum device 92 and connects the exhaust hole 2 a of the bonding head 2 to the vacuum device 92.

The vacuum device 92 supplies the negative pressure of the suction hole 23a via the exhaust pipe 91, the exhaust hole 2a, and the exhaust hole 23b. Thereby, vacuum suction of the semiconductor wafer 200 using the suction hole 23a is possible.

The vacuum device 92 supplies the negative pressure of the suction hole 24a via the exhaust pipe 91, the exhaust hole 2a, the exhaust hole 24c, and the exhaust hole 24b. Thereby, vacuum suction of the film 54 using the suction holes 24a is possible.

The semiconductor manufacturing apparatus 1 heats and compresses the semiconductor wafer 200 to a plurality of bump electrodes on a substrate 100 that fills the gap with an adhesive resin 110 while interposing a thin film 53 between the back surface of the semiconductor wafer 200 and the bonding tool 20. .

For example, when the applying mechanisms 70 and 80 are not operated, during the heating of the semiconductor wafer 200, as shown in FIG. 2, wrinkles CR1 and CR2 may be generated in the upstream and downstream parts of the bonding tool 20 of the film 53 Sexually. FIG. 2 is a diagram showing the operation of the semiconductor manufacturing apparatus 1 when the providing mechanisms 70 and 80 are not operated. The adhesive resin 110 extruded from the outer shape of the semiconductor wafer 200 is as shown in FIG. 3, and the wrinkles CR1 and CR2 spreading to the film 53 may appear remarkably. FIG. 3 is a diagram showing the mounting state of the semiconductor device when the providing mechanisms 70 and 80 are not operated. That is, in flip-chip mounting using FAB, on the substrate 100 on the outer periphery of the semiconductor wafer 200, due to the wrinkles of the film 53, the outgoing ribbons 110a and the island ribbons 110b of the adhesive resin 110 are generated. That is, the emerging ribbon 110a and the island ribbon 110b are in a state where the film 53 hangs down and is in contact with the substrate 100, and the adhesive resin 110 spreads on the film 53 and is generated at a place in contact with the substrate 100. Therefore, stable extrusion of the adhesive resin 110 may not be obtained, peeling of the semiconductor wafer from the substrate 100, etc., or contamination of the adhesive resin 110 to adjacent wafers or adjacent parts may cause defects.

On the other hand, in the semiconductor manufacturing apparatus 1, once the film 53 starts to stretch by heating, the application mechanism 70 on the upstream side and the application mechanism 80 on the downstream side are respectively controlled so that the tension of the film 53 is maintained as desired. In the range. Thereby, the occurrence of wrinkles CR1 and CR2 of the film 53 can be suppressed, and the installation failure can be prevented.

Next, the operation of the semiconductor manufacturing apparatus 1 will be described with reference to FIGS. 4 to 11. FIG. 4 is a flowchart showing the operation of the semiconductor manufacturing apparatus 1. Fig. 5, Fig. 6, Fig. 10, and Fig. 11 are process cross-sectional views showing a method of manufacturing a semiconductor wafer. FIG. 7 is a time chart showing the operation of the semiconductor manufacturing apparatus 1 at the time of bonding. FIG. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus 1 at the time of bonding. FIG. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus 1 at the time of bonding.

The semiconductor manufacturing apparatus 1 performs the first bonding (S10). In S10, S1~S7 are processed.

FIG. 5(a) shows the substrate 100 on which the adhesive resin 110 is applied in advance along a predetermined trajectory and a part of the enlarged portion thereof. In FIG. 5(a), an example is shown in which the adhesive resin 110 is applied to a substrate 100 including a plurality of rectangular regions corresponding to a plurality of semiconductor wafers in a trajectory along the diagonal of each rectangular region. The adhesive resin 110 is, for example, NCP. The substrate 100 is put into the semiconductor manufacturing apparatus 1. The semiconductor manufacturing apparatus 1 is an apparatus for flip chip mounting of semiconductor chips. The substrate 100 put in is transported to the stage (thermocompression bonding stage) 10 heated by the heating element 12 (S1).

The semiconductor wafer is attached to a dicing film and diced, and singulated into a plurality of semiconductor wafers, and the singulated semiconductor wafer 200 is peeled from the dicing film (S2).

From the delivery reel 51 to the feeding direction shown by the dotted arrow in FIG. 5(b), the film 53 is conveyed via the roller 72 and the movable roller 71 (S3). Furthermore, while passing through the movable roller 81 and the roller 82, the film 53 is wound up by the winding drum 52 (S3a).

As shown in FIG. 5( b ), the semiconductor manufacturing apparatus 1 uses the suction structures 23 and 24 of the bonding tool 20 to vacuum suction the film 53. As shown in FIG. 5(c), in the semiconductor manufacturing apparatus 1 in the film 53 to which it is sucked and fixed, a hole 53a is opened with a pin 11 in a predetermined arrangement (S4).

Then, the transfer of the semiconductor wafer from the transfer system to the bonding tool 20 is performed (S5). As shown in FIG. 6(a), the semiconductor wafer 200 is transferred through the hole 53a of the film 53 and the suction hole 23a of the bonding tool 20 The back surface 200b is fixed by vacuum suction. In the semiconductor wafer 200, the front surface 200a is the surface on which the pattern of the element is formed, and the back surface 200b is the surface on the opposite side to the front surface 200a. Electrode pads are arranged on the surface 200 a of the semiconductor wafer 200, and bump electrodes 210 are bonded on the electrode pads.

Then, the semiconductor manufacturing apparatus 1 performs a bonding operation (S6). Specifically, the operations shown in FIGS. 7 to 9 are performed. FIG. 7 is a time chart showing the operation of the semiconductor manufacturing apparatus 1. FIG. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus 1. FIG. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus 1.

In the period TP1 shown in FIG. 7, the semiconductor manufacturing apparatus 1 analyzes the image of the alignment mark of the semiconductor wafer 200 picked up by the imaging element (not shown), calculates the center position of the semiconductor wafer 200 in the XY direction, etc., to recognize The position of the semiconductor wafer 200 (S6a). The semiconductor manufacturing apparatus 1 analyzes the image of the alignment mark of the substrate 100 picked up by an imaging element (not shown), calculates the center position of the substrate 100 in the XY direction, etc., and recognizes the position of the substrate 100 (S6b). In the semiconductor manufacturing apparatus 1, the alignment mark of the semiconductor wafer 200 and the alignment mark of the substrate 100 form a predetermined positional relationship, and the platform 10 is operated to perform the alignment of the semiconductor wafer 200 and the substrate 100. At this time, as shown in FIG. 8, ^{the heating control (see FIG. 9) of the first stage of heating (heating 1 st} ) using the heating element 12 is started, but the bonding head 2 is directed to the semiconductor wafer 200 and the substrate 100 The load (joint head load) of is not applied, and the load Fh forms the initial value F0.

In the period TP2 shown in FIG. 7, once the semiconductor wafer 200 and the substrate 100 are aligned (retrieved and inspected), the semiconductor manufacturing apparatus 1 starts the bonding head Z-axis control that moves the bonding head 2 in the Z direction (refer to FIG. 9 ), as shown in FIG. 6(b), the bonding head 2 is lowered to the -Z direction (S6c) until the bump electrode 210 on the -Z side of the semiconductor wafer 200 contacts the position of the adhesive resin 110, and the bonding tool 20 approaching platform 10. Once the bump electrode 210 comes into contact with the adhesive resin 110, the lowering speed of the bonding tool 20 is slightly reduced, and the bonding tool 20 is lowered to the -Z direction at the reduced speed, so that the bump electrode 210 of the semiconductor wafer 200 is in contact with Electrode pads on the substrate 100.

In this state, according to the heating control (see FIG. 9), the heating element 12 performs a heating operation (S6d) to heat the semiconductor wafer 200 through the platform 10 and the substrate 100, and the temperature Th of the semiconductor wafer 200 is controlled Into T1. Then, the bond head 2 starts the bond head load control (see FIG. 9) where the load is applied to the semiconductor wafer 200 and the substrate 100, and the bond head load operation (S6c) is performed, and the load Fh to the semiconductor wafer 200 and the substrate 100 is changed Be controlled to F1.

In the period TP3 shown in FIG. 7, the semiconductor manufacturing apparatus 1 uses a conventional method in which the load Fh of the semiconductor wafer 200 and the substrate 100 is maintained at F1, and the distance between the bonding tool 20 and the platform 10 is relatively controlled, and the semiconductor wafer 200 The temperature Th rises from T1 to T2 (>T1).

Accordingly, processing (processing ^ST 1) a first stage, interposed between the bump electrodes of the semiconductor wafer 200 and the wiring substrate 100 is moderately deformed, the contact area of the bump electrode and the substrate, respectively, can be ensured.

In the period TP4 shown in FIG. 7, the semiconductor manufacturing apparatus 1 uses the conventional method in which the load Fh of the semiconductor wafer 200 and the substrate 100 is maintained at F1, relatively controls the distance between the bonding tool 20 and the platform 10, and the semiconductor wafer 200 The temperature Th is maintained at T2. At this time, the Z position of the bonding tool 20 is controlled in the +Z direction or the -Z direction so that the pressing force will be maintained at the target pressure Fh=F1. FIG. 7 shows an example of a case where the Z position of the bonding tool 20 is slowly controlled in the +Z direction.

With this, the second stage of processing (2 ^nd processing) is performed, and the bump electrode can be melted in a state where the contact area between the bump electrode and the substrate is ensured. Thereby, the bump electrode can be prevented from being melted to the periphery, and the bonding of the bump electrode and the substrate can be performed smoothly.

And, almost simultaneously with period TP3, during period TP11 when period TP4 ends in the middle, semiconductor manufacturing apparatus 1 is in parallel with the heating operation (S6d) and the bonding head loading operation (S6c) to perform calibration regarding the elongation of the thin film 53 The acquisition (S6f).

Specifically, the semiconductor manufacturing apparatus 1 is as shown by the one-dot chain arrow in FIG. 10(a), and the Y position of the movable roller 71 forms the movable limit position in the -Y direction and the movable limit in the +Y direction. In the middle of the limit position, while controlling the drive mechanism 76, the pressing member 74 presses the pressure feed roller 73 to the film 53 and the movable pressure feed roller 75 and monitors the movement of the movable pressure feed roller 75 according to the drive mechanism 77. Drive torque. The semiconductor manufacturing apparatus 1 is a table indicating the relationship between the control amount of the drive mechanism 77 and the drive torque, which is experimentally determined and set in advance, and the drive torque can be obtained and monitored from the control amount of the drive mechanism 77 and the table. The semiconductor manufacturing apparatus 1 estimates the tension of the thin film 53 on the upstream side (-Y side) of the bonding tool 20 based on the driving torque. As shown by the dotted arrow in FIG. 10(b), the semiconductor manufacturing apparatus 1 operates the drive mechanisms 76 and 77 such that the estimated tension is within a desired range. Thereby, the film 53 on the upstream side (-Y side) of the bonding tool 20 is wound back (S6f1). At this time, the controller 30 obtains the elongation of the film 53 based on the diameter of the movable pressure feed roller 75 and the rotation angle of the movable pressure feed roller 75. If the diameter of the movable pressure _{feed roller 75 is d 75} , the circumference ratio is π, and the rotation angle is θ ₇₅ (°), the semiconductor manufacturing apparatus 1 calculates the upstream side of the film 53 by equation 1. The elongation ΔL ₇₀ . That is, the tension on the supply side is monitored, the film 53 on the supply side is wound, and the winding amount of the film is measured (see FIG. 9).

In addition, the semiconductor manufacturing apparatus 1 is as shown by a one-dot chain arrow in FIG. 10(a). The Y position of the movable roller 81 forms a movable limit position in the -Y direction and a movable limit position in the +Y direction. The intermediate method is to control the driving mechanism 86 while monitoring the driving torque of the movable pressure feeding roller 85 according to the driving mechanism 87 while the pressing member 84 pushes the pressure feed roller 83 to the film 53 and the movable pressure feed roller 85 . The semiconductor manufacturing apparatus 1 is a table indicating the relationship between the control amount of the drive mechanism 87 and the drive torque, which is experimentally determined and set in advance, and the drive torque can be obtained and monitored from the control amount of the drive mechanism 87 and the table. The semiconductor manufacturing apparatus 1 estimates the tension of the film 53 on the downstream side (-Y side) of the bonding tool 20 based on the driving torque. The semiconductor manufacturing apparatus 1 operates the drive mechanism 87 so that the estimated tension is within a desired range. Thereby, winding of the film 53 on the downstream side (+Y side) of the bonding tool 20 is performed (S6f2). At this time, the semiconductor manufacturing apparatus 1 obtains the elongation of the film 53 based on the diameter of the movable pressure feed roller 85 and the rotation angle of the movable pressure feed roller 85. If the diameter of the movable pressure _{feed roller 85 is set to d 85} , the circumference ratio is set to π, and the rotation angle is set to θ ₈₅ (°), the semiconductor manufacturing apparatus 1 obtains the downstream side of the film 53 by equation 2. The elongation ΔL ₈₀ . That is, the tension on the recovery side is monitored, the film 53 on the recovery side is wound, and the winding amount of the film is measured (see FIG. 9).

The semiconductor manufacturing apparatus 1 once acquires the calibration amount related to the elongation of the film 53, and maintains the calibration amount for the control of the winding amount of the film to be bonded after the second time (see FIG. 9).

In the period TP5 shown in FIG. 7, as shown in FIG. 11, in this state, the bonding tool 20 is raised to the +Z direction (S7 ), and the bonding tool 20 is moved relatively away from the platform 10.

The semiconductor manufacturing apparatus 1 performs the n-th bonding (S20). n is an arbitrary integer of 2 or more. In S20, it is basically the same as S10, but in the next point, an operation different from S10 is performed.

After S2, the operation of the vacuum device 92 is stopped, the decompression state of the pipe 91 is released, the suction by the suction structures 23, 24 of the bonding tool 20 is released, and the used film 53 is peeled off (S21). Then, as shown by the arrow in FIG. 11, from the delivery reel 51 to the take-up reel 52, the reel 53 is wound up by a predetermined amount so that the new reel 53 is located on the surface of the protrusion 22 of the bonding tool 20 -Z side of 22a (S21a). In addition, the timing of suction by the suction structures 23 and 24 after the bonding is released and the timing of moving the bonding head away from the platform can be arbitrarily changed according to the size of the semiconductor wafer and the like. Then, proceed to S3.

After S5, the semiconductor manufacturing apparatus 1 performs a bonding operation (S26). The bonding operation (S26) is performed during the periods TP1 to TP5 shown in FIG. 7 and the bonding head lowering operation (S6c), heating operation (S6d), bonding head load operation (S6c), and bonding head raising operation are performed in the same manner as S10. (S7).

And, in the period TP11 shown in FIG. 7, the winding operation etc. for tension control of the film 53 using the calibration amount acquired in S6f are performed (S26f).

Specifically, the semiconductor manufacturing apparatus 1 is as shown by a dotted arrow in FIG. 10(b). The Y position of the movable roller 71 forms a movable limit position in the -Y direction and a movable limit in the +Y direction. In the middle of the position, while controlling the drive mechanism 76, the drive mechanism 77 is used to move in accordance with the calibration amount while the pressing member 74 presses the pressure feed roller 73 to the film 53 and the movable pressure feed roller 75. The amount causes the movable nip roller 75 to rotate. Thereby, on the upstream side of the bonding tool 20, the film 53 is wound back in such a manner that the tension of the film 53 is within a desired range (S26f1).

In addition, the semiconductor manufacturing apparatus 1 is as shown by the dotted arrow in FIG. 10(b). The Y position of the movable roller 81 forms the movable limit position in the -Y direction and the movable limit position in the +Y direction. In the intermediate method, while controlling the driving mechanism 86, while the pressing member 84 presses the nip roller 83 to the film 53 and the movable nip roller 85, the driving mechanism 87 is used to adjust the movement amount corresponding to the calibration amount. The movable pressure feed roller 85 rotates. Thereby, on the downstream side of the bonding tool 20, the film 53 is wound up so that the tension of the film 53 is within a desired range (S26f2).

The semiconductor manufacturing apparatus 1 repeats S20 (S2 to S7) until the semiconductor wafer in the pickup portion (designated portion) of the semiconductor substrate is processed (No in S30). Once the semiconductor wafer in the portion (specified portion) of the semiconductor substrate is processed to form another wafer that should not be processed, the thermal compression bonding of all semiconductor wafers in the semiconductor substrate is completed (Yes at S30), and the process is complete. The subsequent semiconductor substrate will be released from the device and transported to the next process.

As described above, in the present embodiment, the semiconductor manufacturing apparatus 1 is installed: when the bonding tool 20 presses the semiconductor wafer 200 through the film 53, the tension of the film 53 is applied to each of the upstream side and the downstream side of the bonding tool 20. Institutions 70, 80. This can control the tension of the film 53 to be within a desired range during the period when the web starts to stretch during joining, and the wrinkles of the film can be reduced. As a result, it is possible to prevent defective joint installation.

In addition, the applying mechanisms 170 and 180 of the semiconductor manufacturing apparatus 101 are as shown in FIG. FIG. 12 is a diagram showing the configuration of a semiconductor manufacturing apparatus 101 according to a modification of the embodiment. In FIG. 12, in order to simplify the illustration, the illustration of the driving mechanism 41, the driving mechanism 42, the temperature sensor 61, the pressure sensor 62, and the exhaust system 90 is omitted.

The providing mechanism 170 has a roller 71a, a drive mechanism 176, and a movable roller 171, a roller 172a, and a roller 172b instead of the movable roller 71 and the drive mechanism 76 (refer to FIG. 1).

The roller 71 a is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feeding direction of the film 53 with respect to the surface of the protrusion 22. The roller 71a can contact the film 53 from the +Y side. The position of the roller 71a as a rotating shaft is fixed. The roller 71a receives the stress in the direction along the surface of the film 53 and rotates passively.

The movable roller 171 is arranged on the -Y side of the bonding tool 20 and is arranged on the upstream side of the feeding direction of the film 53 with respect to the surface of the protrusion 22. The movable roller 171 is arranged between the roller 72 and the movable pressure feed roller 75 and the pressure feed roller 73. The movable roller 71 can contact the film 53 from the +Z side. The driving mechanism 176 is, for example, a linear motor, and according to the control from the controller 30, as shown by a one-dot chain arrow, the rotation axis of the movable roller 171 can be moved in the +Z direction and the -Z direction. In other words, the driving mechanism 176 can move (vertically drive) the rotation axis of the movable roller 171 to the approaching direction (-Z direction) and the deviating direction (+Z direction) to the contact point of the film 53. Thereby, the movable roller 171 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the contact point to the film 53. In addition, the movable roller 171 rotates passively when it receives a stress in the direction along the surface of the film 53 when it is not driven.

The roller 172 a is arranged on the -Y side of the bonding tool 20, and is arranged on the upstream side in the feeding direction of the film 53 with respect to the movable roller 171. The roller 172a can contact the film 53 from the -Z side. The position of the roller 172a as a rotating shaft is fixed. The roller 172a receives the stress in the direction along the surface of the film 53 and rotates passively.

The roller 172b is arranged on the -Y side of the bonding tool 20, and is arranged on the downstream side in the feeding direction of the film 53 with respect to the movable roller 171. The roller 172b can contact the film 53 from the -Z side. The position of the roller 172b as a rotating shaft is fixed. The roller 172b receives the stress in the direction along the surface of the film 53 and rotates passively.

The providing mechanism 180 replaces the movable roller 81 and the drive mechanism 86 (refer to FIG. 1), and has a roller 81a, a drive mechanism 186, and further has a movable roller 181, a roller 182a, and a roller 182b.

The roller 81 a is arranged on the +Y side of the bonding tool 20, and is arranged on the downstream side in the feeding direction of the film 53 with respect to the surface of the protrusion 22. The roller 81a can contact the film 53 from the -Y side. The position of the roller 81a as a rotating shaft is fixed. The roller 81a receives the stress in the direction along the surface of the film 53 and rotates passively.

The movable roller 181 is arranged on the +Y side of the bonding tool 20 and is arranged on the downstream side of the feeding direction of the film 53 with respect to the surface of the protrusion 22. The movable roller 181 is arranged between the roller 82 and the movable nip roller 85 and the nip roller 83. The movable roller 81 can contact the film 53 from the +Z side. The driving mechanism 186 is, for example, a linear motor, and according to the control from the controller 30, as shown by a one-dot chain arrow, the rotation axis of the movable roller 181 can be moved in the +Z direction and the -Z direction. In other words, the driving mechanism 186 can move (vertically drive) the rotation axis of the movable roller 181 to the approaching direction (−Z direction) and the away direction (+Z direction) to the contact point of the film 53. Thereby, the movable roller 181 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the contact point to the film 53. In addition, the movable roller 181 rotates passively by receiving the stress in the direction along the surface of the film 53 with regard to whether it is rotated or not.

The roller 182 a is arranged on the +Y side of the bonding tool 20 and is arranged on the downstream side in the feeding direction of the film 53 with respect to the movable roller 181. The roller 182a can contact the film 53 from the -Z side. The position of the roller 182a as a rotating shaft is fixed. The roller 182a receives the stress in the direction along the surface of the film 53 and rotates passively.

The roller 182 b is arranged on the +Y side of the bonding tool 20, and is arranged on the upstream side in the feeding direction of the film 53 with respect to the movable roller 181. The roller 182b can contact the film 53 from the -Z side. The position of the roller 182b as a rotating shaft is fixed. The roller 182b receives the stress in the direction along the surface of the film 53 and rotates passively.

In this way, the applying mechanisms 170 and 180 of the semiconductor manufacturing apparatus 101 can also apply tension to the film 53 by driving the rotating shafts of the movable rollers 171 and 181 vertically.

Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can also be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the invention described in the scope of the patent application and its equivalent scope.

1: Semiconductor manufacturing equipment 2: Joint head 2a: Vent 10: Platform 10a: surface 11: Needle 12: Heating element 20: Joining tool 21: base part 22: protrusion 23: Adsorption structure 23a: adsorption hole 23b: Vent 24: Adsorption structure 24a: adsorption hole 24b, 24c: vent 30: Controller 41: drive mechanism 42: drive mechanism 51: send reel 52: take-up reel 53: Film 61: Temperature sensor 62: Pressure sensor 70: Give institutions 71: Movable scroll wheel 71a: scroll wheel 72: Roller 73: pressure feed roller 74: Pushing member 75: Movable pressure feed roller 76: drive mechanism 77: drive mechanism 78: drive mechanism 80: Give institutions 81: Movable scroll wheel 81a: scroll wheel 82: Wheel 83: Movable pressure feed roller 84: pressure feed roller 85: Pushing member 86: drive mechanism 87: drive mechanism 88: drive mechanism 90: Exhaust system 91: exhaust pipe 92: vacuum device 100: substrate 100a: surface 101: Semiconductor manufacturing equipment 110: Adhesive resin 110a: Emerging ribbons 110b: Outlying island ribbon 170: Give institutions 171: Movable scroll wheel 172a: Roller 172b: Wheel 176: drive mechanism 180: Give institutions 181: Movable scroll wheel 182a: Roller 182b: Wheel 186: drive mechanism 200: semiconductor wafer

[Fig. 1] Fig. 1 is a diagram showing the configuration of a semiconductor manufacturing apparatus according to an embodiment. [Fig. 2] Fig. 2 is a diagram showing the operation of the semiconductor manufacturing apparatus when the provision mechanism of the embodiment is not operated. [Fig. 3] Fig. 3 is a diagram showing the mounting state of the semiconductor wafer when the providing mechanism of the embodiment is not operated. Fig. 4 is a flowchart showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [Fig. 5] Fig. 5 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [Fig. 6] Fig. 6 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. Fig. 7 is a time chart showing the operation of the semiconductor manufacturing apparatus of the embodiment. Fig. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus of the embodiment. [Fig. 9] Fig. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus of the embodiment. Fig. 10 is a diagram showing the operation of the semiconductor manufacturing apparatus of the embodiment. Fig. 11 is a diagram showing the operation of the semiconductor manufacturing apparatus of the embodiment. [Fig. 12] Fig. 12 is a diagram showing the configuration of a semiconductor manufacturing apparatus according to a modification of the embodiment.

1: Semiconductor manufacturing equipment

2: Joint head

2a: Vent

10: Platform

10a: surface

11: Needle

12: Heating element

20: Joining tool

21: base part

22: protrusion

23: Adsorption structure

23a: adsorption hole

23b: Vent

24: Adsorption structure

24a: adsorption hole

24b, 24c: vent

30: Controller

41: drive mechanism

42: drive mechanism

51: send reel

52: take-up reel

53: Film

61: Temperature sensor

62: Pressure sensor

70: Give institutions

71: Movable scroll wheel

72: Roller

73: pressure feed roller

74: Pushing member

75: Movable pressure feed roller

76: drive mechanism

77: drive mechanism

78: drive mechanism

80: Give institutions

81: Movable scroll wheel

82: Wheel

83: Movable pressure feed roller

84: pressure feed roller

85: Pushing member

86: drive mechanism

87: drive mechanism

88: drive mechanism

91: exhaust pipe

92: vacuum device

100: substrate

100a: surface

110: Adhesive resin

200: semiconductor wafer

Claims (8)

A semiconductor manufacturing device characterized by: Bonding tool, which absorbs semiconductor wafers through thin films; The heating part, which heats the aforementioned semiconductor wafer; A first applying mechanism, which is arranged on the upstream side of the feeding direction of the film with respect to the bonding tool, and applies tension to the film; and The second applying mechanism is arranged on the downstream side of the feeding direction of the film with respect to the bonding tool, and applies tension to the film. The semiconductor manufacturing apparatus according to claim 1, further comprising a controller for obtaining the elongation amount of the film in accordance with the operation amount of the first applying mechanism and the second applying mechanism. The semiconductor manufacturing apparatus according to claim 2, wherein the controller obtains the elongation of the thin film during the first period of processing the first semiconductor wafer, and The first applying mechanism and the second applying mechanism apply tension to the film in accordance with the obtained amount of elongation during the second period of processing the second semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1, further including a platform on which a substrate is placed, The bonding tool sucks the semiconductor wafer facing the main surface of the platform through the thin film, The first applying mechanism and the second applying mechanism respectively partially move the film in a direction approaching or away from the contact point of the film to apply tension. The semiconductor manufacturing apparatus according to claim 4, wherein: The first applying mechanism is to wind the film in a direction opposite to the feeding direction to apply tension, The second applying mechanism winds the film in the feed direction to apply tension. The semiconductor manufacturing apparatus according to claim 4, wherein the aforementioned first granting mechanism has: A first roller, which is arranged on the upstream side of the feeding direction of the film with respect to the bonding tool, and is in contact with the film; and The first drive mechanism is capable of moving the rotation axis of the first roller to a direction approaching and a direction away from the contact point of the film, The aforementioned second granting agency has: A second roller, which is arranged on the downstream side of the feeding direction of the film with respect to the bonding tool, and contacts the film; and The second driving mechanism is capable of moving the rotation axis of the second roller to a direction approaching and a direction away from the contact point of the film. The semiconductor manufacturing apparatus according to claim 6, wherein the aforementioned first granting mechanism further has: A third roller, which is arranged on the upstream side of the feeding direction of the film with respect to the bonding tool, and is in contact with the film; and The third drive mechanism is capable of rotating the aforementioned third roller in a rotation direction corresponding to the opposite direction of the feed direction, The aforementioned second granting agency has more: A fourth roller, which is arranged on the downstream side of the feeding direction of the film with respect to the bonding tool, and is in contact with the film; and The fourth drive mechanism is capable of rotationally driving the aforementioned fourth roller in a rotation direction corresponding to the feeding direction. The semiconductor manufacturing apparatus according to claim 7, further comprising a controller that interlocks and controls the amount of movement of the first roller according to the first drive mechanism and the amount of rotation of the third roller according to the third drive mechanism , And the interlocking control is based on the amount of movement of the second roller of the second drive mechanism and the amount of rotation of the fourth roller of the fourth drive mechanism.

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