TWI774020B - Semiconductor manufacturing equipment - Google Patents

Abstract

According to one embodiment, there is provided a semiconductor manufacturing apparatus including a bonding tool, a heating unit, a first imparting mechanism, and a second imparting mechanism. The bonding tool sucks the semiconductor wafer through a thin film. The heating part heats the semiconductor wafer. The first imparting mechanism is arranged on the upstream side in the feeding direction of the film with respect to the bonding tool. The first imparting mechanism imparts tension to the film. The second imparting mechanism is arranged on the downstream side in the feeding direction of the film with respect to the bonding tool. The second imparting mechanism imparts tension to the film.

Description

Semiconductor manufacturing equipment

This embodiment is related to a semiconductor manufacturing apparatus. References to related applications This application is entitled to the priority of Japanese Patent Application No. 2020-044334 for which it applied on March 13, 2020, and the entire content of this Japanese patent application is used in this application.

In a semiconductor manufacturing apparatus for bonding semiconductor wafers, a film is interposed between the surface of a bonding tool and the semiconductor wafer, and the bonding tool pushes the semiconductor wafer more and more through the film, thereby bonding through a plurality of bump electrodes in the case of the substrate. At this time, it is desirable to appropriately join.

One embodiment is to provide a semiconductor manufacturing apparatus that can appropriately perform bonding.

The bonding tool of the semiconductor manufacturing apparatus of the embodiment sucks the semiconductor wafer through the thin film. The heating part heats the semiconductor wafer. The first imparting mechanism is arranged on the upstream side in the feeding direction of the film with respect to the bonding tool. The first imparting mechanism imparts tension to the film. The second imparting mechanism is arranged on the downstream side in the feeding direction of the film with respect to the bonding tool. The second imparting mechanism imparts tension to the film.

According to the above-mentioned configuration, it is possible to provide a semiconductor manufacturing apparatus including a bonding tool, a heating unit, a first imparting mechanism, and a second imparting mechanism.

Hereinafter, the semiconductor manufacturing apparatus of the embodiment will be described in detail with reference to the drawings. In addition, this invention is not limited by this embodiment.

(Embodiment) The semiconductor manufacturing apparatus of the embodiment performs flip-chip forming of a semiconductor device by thermocompression bonding (bonding) a semiconductor wafer to a wiring board through a plurality of bump electrodes whose gaps are filled with an adhesive resin (underfill). (flip chip) installation. A semiconductor manufacturing apparatus performs FAB (Film Assist Bonding) in which a thin film is interposed between the back surface of a semiconductor wafer (the back surface opposite to the surface to which circuits are applied) and a thermocompression bonding tool (hereinafter referred to as a bonding tool). Thereby, the adhesive resin extruded from the outer shape of the wafer at the time of thermocompression bonding is prevented from adhering to the bonding tool.

In FAB, the thin film interposed between the bonding tool and the semiconductor wafer during flip chip may be wrinkled in the thin film due to the heat of the bonding tool. The adhesive resin extruded from the outer shape of the wafer spreads to the wrinkle of the film, and there are cases where it protrudes remarkably. That is, in flip-chip mounting using FAB, on the substrate on the outer periphery of the wafer, a fillet (hereinafter referred to as a fillet) in which a part of the adhesive resin protrudes is generated on the substrate due to wrinkles in the film. ), and a ribbon (hereinafter referred to as an island ribbon) is formed at a place separated from the wafer. That is to say, the strips are protruded and the island strips are generated at the places separated from the wafers when the film hangs down and contacts the substrate, and the adhesive resin spreads on the surface of the film and the substrate, and is generated at the places in contact with the substrate. Therefore, stable extrusion of the adhesive resin cannot be achieved, peeling of the wafer, etc., or contamination of the adhesive resin to adjacent wafers or adjacent parts may cause defects.

Therefore, in the present embodiment, in the semiconductor manufacturing apparatus, when the bonding tool presses the semiconductor wafer through the film, a tensioning mechanism is provided for applying the tension of the film to each of the upstream side and the downstream side of the bonding tool. To reduce the wrinkles of the film.

Specifically, in a semiconductor manufacturing apparatus, a bonding tool is provided with: an applying mechanism for applying tension to the film on the upstream side in the feeding direction of the film, and an applying mechanism for applying tension to the film on the downstream side in the feeding direction of the film . In the semiconductor manufacturing apparatus, in the first bonding, the semiconductor wafer is attracted to the bonding tool through the thin film, the semiconductor wafer is brought into contact with the substrate placed on the stage, and the semiconductor wafer is heated through the stage and the substrate. In a semiconductor manufacturing apparatus, once the film starts to be stretched by heating, the tension of the film is maintained within a desired range by the application mechanism on the upstream side and the application mechanism on the downstream side, respectively. At this time, the semiconductor manufacturing apparatus obtains the elongation amount on the upstream side of the film by heating according to the amount of operation of the application mechanism on the upstream side, and obtains the downstream side of the film by heating according to the amount of operation of the application mechanism on the downstream side. side elongation. Then, the semiconductor manufacturing apparatus releases the suction of the semiconductor wafer according to the suction structure for wafers, moves the bonding tool away from the stage, releases the suction of the film according to the suction structure for thin films, and transfers the film. In the semiconductor manufacturing apparatus, in the second and subsequent bonding, the semiconductor wafer is attracted to the bonding tool through the thin film, the semiconductor wafer is brought into contact with the substrate placed on the stage, and the conductor device is heated through the stage and the substrate. At this time, the semiconductor manufacturing apparatus feed-forward operates the upstream-side applying mechanism by an operation amount corresponding to the upstream-side elongation amount obtained in the first bonding at the timing when the film is started to be stretched by heating. , the downstream-side imparting mechanism is fed forward by an operation amount corresponding to the downstream-side elongation amount obtained in the first engagement. Then, the semiconductor manufacturing apparatus releases the suction of the semiconductor wafer according to the suction structure for wafers, moves the bonding tool away from the stage, releases the suction of the film according to the suction structure for thin films, and transfers the film. In this way, in the second and subsequent welding, the feedforward operation of the means for providing the respective elongation amounts on the upstream side and the downstream side obtained in the first welding is performed, so that the upstream side of the welding tool can be targeted. and each on the downstream side to maintain the tension of the film within a desired range. As a result, the wrinkles of the film at the time of joining can be reduced.

More specifically, the semiconductor manufacturing apparatus 1 can be configured as shown in FIG. 1 . FIG. 1 is a diagram showing the configuration of a semiconductor manufacturing apparatus 1 .

The semiconductor manufacturing apparatus 1 includes a stage 10 , a bonding tool 20 , a controller 30 , a drive mechanism 41 , a drive mechanism 42 , a delivery reel 51 , a take-up reel 52 , a film 53 , an application mechanism 70 , an application mechanism 80 , a temperature sensor Detector 61 , pressure sensor 62 , exhaust system 90 . The imparting mechanism 70 includes a movable roller 71 , a roller 72 , a movable nip roller 75 , a nip roller 73 , a pressing member 74 , a drive mechanism 76 , and a drive mechanism 77 . The imparting mechanism 80 includes a movable roller 81 , a roller 82 , a movable nip roller 83 , a nip roller 84 , a pressing member 85 , a drive mechanism 86 , and a drive mechanism 87 . The exhaust system 90 includes an exhaust pipe 91 and a vacuum device 92 . Hereinafter, the direction perpendicular to the main surface 10a of the stage 10 is referred to as the Z direction, and the two directions orthogonal to each other within the plane perpendicular to the Z direction are referred to as the X direction and the Y direction.

In the stage 10 , the needles 11 are arranged in the region on the −Y side of the front surface 10 a , and the substrate 100 is placed in the region on the +Y side of the front surface 10 a . In addition, even if the needle portion 11 is not arranged on the platform 10, the platform 10 and the unit of the needle portion may be distinguished from each other. The substrate 100 is also referred to as a wiring substrate or a printed circuit substrate (PCB). The substrate 100 is placed on the surface 10a of the stage 10, and has an SR (solder resist) opening of the substrate at a position corresponding to the bump electrodes of the semiconductor wafer on the surface 100a. The front surface 100 a is the main surface on the +Z side of the substrate 100 . On the bottom surface of the SR opening, wirings to which bump electrodes of the semiconductor wafer should be bonded are arranged. The surface 100 a of the substrate 100 , the bottom surface of the SR opening of the substrate, and the wiring are partially covered with an adhesive resin (underfill) 110 . The adhesive resin 110 may be, for example, NCP (Non Conducting Paste) or NCF (Non Conducting Film). In addition, in the NCF, the substrate side may not be partially covered, but the wafer surface (full surface) to which the electrodes on the semiconductor wafer side are applied in advance may be covered.

Inside the stage 10 is a heating element (heating portion) 12 in which a heater or the like is embedded. The heating element 12 heats the substrate 100 via the stage 10 under the control of the controller 30 , and heats the semiconductor wafer 200 via the substrate 100 when the semiconductor wafer 200 is bonded to the substrate 100 . In addition, the heating element (heating part) may be embedded in the bonding head 2 instead of the platform 10 .

The bonding tool 20 adsorbs and fixes the semiconductor wafer 200 . The bonding tool 20 is held by suction or the like by the bonding head 2 arranged on the +Z side thereof. The bonding tool 20 is larger than the size of the semiconductor wafer, and has a suction structure provided with the absorbable thin film 53 at an outer peripheral position larger than the size of the semiconductor wafer 200 .

The bonding tool 20 has a base portion 21 and a protruding portion 22 . The bonding tool 20 may have the base portion 21 and the protruding portion 22 by performing cutting processing or the like from one material. In this case, the base portion 21 and the protruding portion 22 are integral tools.

The base portion 21 has a plate shape extending in the XY direction. The base portion 21 may have a substantially rectangular shape when viewed in an XY plane. The protruding portion 22 is raised in a pedestal shape on the surface of the base portion 21 . The surface of the base portion 21 is the main surface on the −Z side of the base portion 21 .

The protruding portion 22 is arranged in an area including the center of the surface of the base portion 21 , and may be fixed to the surface of the base portion 21 . The protruding portion 22 may have a substantially rectangular shape when viewed in the XY plane. The protruding portion 22 has a surface, an adsorption structure 23 , and an adsorption structure 24 . The surface of the protruding portion 22 is the main surface on the −Z side of the protruding portion 22 .

The adsorption structure 23 has adsorption holes 23a and exhaust holes 23b. The suction hole 23 a is arranged in the vicinity of the center of the surface of the protruding portion 22 . The exhaust hole 23b extends in the Z direction, and the suction hole 23a communicates with the exhaust hole 2a of the bonding head 2 . The adsorption structure 23 may have a plurality of adsorption holes 23a in the vicinity of the center of the surface of the protruding portion 22 .

The adsorption structure 24 has a plurality of adsorption holes 24a and exhaust holes 24b and 24c. Each suction hole 24 a is arranged outside the suction hole 23 a on the surface of the protrusion 22 . The exhaust hole 24b extends in the XY direction, and connects the suction hole 24a to the exhaust hole 24c. The exhaust hole 24c extends in the Z direction so that the exhaust hole 24b communicates with the exhaust hole 2a of the bonding head 2 . The exhaust hole 24c of the adsorption structure 24 may be shared with the exhaust hole 23b of the adsorption structure 23.

The drive mechanism 41 and the drive mechanism 42 can relatively move the stage 10 and the bonding tool 20 in the X direction, the Y direction, and the Z direction according to the control of the controller 30 . For example, the drive mechanism 41 can move the stage 10 in the X direction and the Y direction according to the control of the controller 30 . The drive mechanism 42 can move the stage 10 in the Z direction according to the control of the controller 30 .

The sending reel 51 is arranged on the -Y side of the bonding tool 20 . The take-up reel 52 is arranged on the +Y side of the bonding tool 20 . The film 53 is sent out from the delivery reel 51 to the +Y side, passes through the -Z side of the surface of the projection 22 of the bonding tool 20 (the surface on the -Z side), advances to the +Y side, and is taken up by the take-up reel 52 . Coiled. That is, the film 53 is provided in a state in which the film 53 is interposed on the surface of the protruding portion 22 of the bonding tool 20 . Thereby, the adhesive resin 110 can be prevented from adhering to the surface of the protruding portion 22 of the bonding tool 20 .

The delivery reel 51 winds the film 53 which is not used for bonding. The delivery reel 51 can deliver the film 53 under the control of the controller 30 . The take-up reel 52 can take up the film 53 under the control of the controller 30 . The take-up reel 52 is rotated to take up the film 53 after the mounting of each semiconductor wafer is completed. The film 53 is sandwiched between the surface of the protrusion 22 of the bonding tool 20 and the semiconductor wafer 200 to prevent the adhesive resin 110 from adhering to the surface of the protrusion 22 of the bonding tool 20 when the semiconductor wafer 200 is mounted on the substrate 100 .

The applying mechanism 70 is arranged on the upstream side in the feeding direction of the film 53 with respect to the bonding tool 20 , and is arranged between the delivery reel 51 and the bonding tool 20 . The applying mechanism 70 applies tension to the film 53 . The applying mechanism 70 applies tension to the film 53 by partially moving the film 53 in a direction approaching or moving away from the contact with the film 53 . The applying mechanism 70 winds the film 53 in a direction opposite to the feeding direction of the film 53 to apply tension to the film 53 .

The imparting mechanism 70 includes a movable roller 71 , a roller 72 , a movable nip roller 75 , a nip roller 73 , a pressing member 74 , a driving mechanism 76 , a driving mechanism 77 , and a driving mechanism 78 .

The movable roller 71 is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the surface of the projection portion 22 . The movable roller 71 can contact the film 53 from the +Y side. The drive mechanism 76 is, for example, a linear motor, and can move the rotating shaft of the movable roller 71 in the +Y direction and the -Y direction as indicated by the arrows with one-dot chain lines under the control from the controller 30 . That is, the drive mechanism 76 can move (horizontally drive) the rotating shaft of the movable roller 71 in the approaching direction (-Y direction) and the distant direction (+Y direction) with respect to the contact with the film 53 . Thereby, the movable roller 71 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the point of contact with the film 53 . In addition, the movable roller 71 is not driven in relation to its rotation, and passively rotates by receiving the stress in the direction along the surface of the film 53 .

The roller 72 is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the movable roller 71 . The roller 72 is accessible to the film 53 from the -Y side. The position where the roller 72 is the axis of rotation will be fixed. The roller 72 is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The movable nip roller 75 is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the roller 72 . The movable nip roller 75 can contact the film 53 from the -Z side. The position where the movable nip roller 75 is the axis of rotation is fixed. The drive mechanism 77 is, for example, a rotary motor, and can drive the movable nip roller 75 to rotate in a rotational direction (counterclockwise in a YZ plane view) corresponding to the opposite direction to the feeding direction. Thereby, the movable nip roller 75 can adjust the stress applied to the upstream side of the film 53 in the direction along the surface of the film 53 .

The nip roller 73 is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the roller 72 . The nip roll 73 can be brought into contact with the film 53 from the +Z side. The position where the nip roller 73 is the axis of rotation is fixed. The nip roll 73 is disposed on the opposite side of the movable nip roll 75 with the film 53 therebetween, and there is a clearance (clearance) between the movable nip roll 75 so that the film 53 does not come into contact.

The pressing member 74 is arranged on the −Y side of the bonding tool 20 and is arranged on the +Z side of the nip roller 73 . The pressing member 74 is located away from the nip roller 73 to the +Z side. The drive mechanism 78 is, for example, a linear motor, and can push and drive the pressing member 74 to the −Z side.

In the steady state, the drive mechanism 76 cancels the horizontal drive of the rotating shaft of the movable roller 71, and the position of the rotating shaft of the movable roller 71 is constant. The drive mechanism 78 releases the pressing member 74 for pressing and driving to the −Z side, and the nip roller 73 and the movable nip roller 75 have a gap where the film 53 is in non-contact. The drive mechanism 77 cancels the rotational drive of the movable nip roller 75, which is passively rotatable in the rotational direction (clockwise in YZ plane view) corresponding to the feeding direction of the film 53.

During the heating by the heating element 12 during the bonding of the semiconductor wafers 200 , the drive mechanism 76 moves (horizontally drives) the rotating shaft of the movable roller 71 in the −Y direction or the +Y direction. Thereby, the movable roller 71 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 . The drive mechanism 78 pushes and drives the push member 74 to the -Z side. Thereby, the pressing member 74 presses the nip roller 73 to the −Z side, and the nip roller 73 and the movable nip roller 75 can press the film 53 from both sides in the Z direction. The drive mechanism 77 drives the movable nip roller 75 to rotate in a rotational direction corresponding to the opposite direction to the feeding direction. Thereby, the movable nip roller 75 can adjust the stress applied to the upstream side of the film 53 in the direction along the surface of the film 53 .

For example, the controller 30 controls the drive mechanism 76 and monitors the drive torque according to the drive mechanism 77 so that the Y position of the movable roller 71 forms an intermediate position between the movable limit position in the −Y direction and the movable limit position in the +Y direction. . The controller 30 is a table showing the relationship between the control amount of the drive mechanism 77 and the drive torque, which is experimentally determined and set in advance, and the drive torque is obtained and monitored from the control amount of the drive mechanism 77 and the table. The controller 30 estimates the tension of the film 53 on the upstream side (-Y side) of the bonding tool 20 based on the driving torque. The controller 30 operates the drive mechanism 77 so that the estimated tension is within a desired range. At this time, the controller 30 obtains the elongation amount of the film 53 according to the diameter of the movable nip roller 75 and the rotation angle of the movable nip roller 75 . If the diameter of the movable nip roll 75 is d ₇₅ , the circumference is π, and the rotation angle is θ ₇₅ (°), the controller 30 can also obtain the film 53 by the following equation 1. The elongation ΔL ₇₀ on the upstream side of . ΔL ₇₀ =d ₇₅ ×π×(θ ₇₅ /360°)･･･Expression 1

The applying mechanism 80 is arranged on the downstream side in the feeding direction of the film 53 with respect to the bonding tool 20 , and is arranged between the bonding tool 20 and the winding reel 52 . The applying mechanism 80 applies tension to the film 53 . The applying mechanism 80 applies tension to the film 53 by partially moving the film 53 in a direction approaching or moving away from the contact with the film 53 . The applying mechanism 80 winds the film 53 in the feeding direction of the film 53 and applies tension to the film 53 .

The imparting mechanism 80 includes a movable roller 81 , a roller 82 , a movable nip roller 85 , a nip roller 83 , a pressing member 84 , a drive mechanism 86 , a drive mechanism 87 , and a drive mechanism 88 .

The movable roller 81 is arranged on the −Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the surface of the projection portion 22 . The movable roller 81 can contact the film 53 from the -Y side. The drive mechanism 86 is, for example, a linear motor, and can move the rotating shaft of the movable roller 81 in the +Y direction and the -Y direction as indicated by a one-dotted arrow under the control from the controller 30 . That is, the drive mechanism 86 can move (horizontally drive) the rotating shaft of the movable roller 81 in the approaching direction (+Y direction) and the distant direction (-Y direction) with respect to the contact with the film 53 . Thereby, the movable roller 81 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the point of contact with the film 53 . In addition, the movable roller 81 is not driven in relation to its rotation, and passively rotates by receiving the stress in the direction along the surface of the film 53 .

The roller 82 is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the movable roller 81 . The roller 82 is accessible to the film 53 from the +Y side. The position where the roller 82 is the axis of rotation will be fixed. The roller 82 is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The movable nip roller 85 is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the roller 82 . The movable nip roller 85 can contact the film 53 from the -Z side. The position where the movable nip roller 85 is the axis of rotation is fixed. The drive mechanism 87 is, for example, a rotary motor, and can drive the movable nip roller 85 to rotate in a rotational direction corresponding to the feeding direction (clockwise rotation in a YZ plane view). Thereby, the movable nip roller 85 can adjust the stress applied to the downstream side of the film 53 in the direction along the surface of the film 53 .

The nip roller 83 is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the roller 82 . The nip roll 83 can be brought into contact with the film 53 from the +Z side. The position where the nip roller 83 is the axis of rotation is fixed. The nip roll 83 is disposed on the opposite side of the movable nip roll 85 with the film 53 sandwiched therebetween, and there is a space between the movable nip roll 85 and the film 53 to be in non-contact.

The pressing member 84 is arranged on the +Y side of the bonding tool 20 and is arranged on the +Z side of the nip roller 83 . The pressing member 84 is located away from the nip roller 83 to the +Z side. The drive mechanism 88 is, for example, a linear motor, and can push and drive the pressing member 84 to the −Z side.

In a steady state, the drive mechanism 86 cancels the horizontal drive of the rotating shaft of the movable roller 81, and the position of the rotating shaft of the movable roller 81 is constant. The drive mechanism 88 releases the pressing member 84 for pressing and driving to the −Z side, and the nip roller 83 and the movable nip roller 85 have a space where the film 53 does not come into contact with each other. The drive mechanism 87 releases the rotational drive of the movable nip roller 85 , which is passively rotatable in the rotational direction (clockwise in YZ plane view) corresponding to the feeding direction of the film 53 .

During the heating by the heating element 12 during the bonding of the semiconductor wafer 200 , the drive mechanism 86 moves (horizontally drives) the rotational axis of the movable roller 81 in the −Y direction or the +Y direction. Thereby, the movable roller 81 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 . The drive mechanism 88 pushes and drives the push member 84 to the -Z side. Thereby, the pressing member 84 presses the nip roller 83 to the −Z side, and the nip roller 83 and the movable nip roller 85 can press the film 53 from both sides in the Z direction. The drive mechanism 87 drives the movable nip roller 85 to rotate in a rotational direction corresponding to the feeding direction. Thereby, the movable nip roller 85 can adjust the stress applied to the downstream side of the film 53 in the direction along the surface of the film 53 .

For example, the controller 30 controls the drive mechanism 86 and monitors the drive torque according to the drive mechanism 87 so that the Y position of the movable roller 81 is in the middle between the movable limit position in the −Y direction and the movable limit position in the +Y direction. . The controller 30 is a table indicating the relationship between the control amount of the drive mechanism 87 and the drive torque, which is experimentally determined and set in advance, and the drive torque is obtained and monitored from the control amount of the drive mechanism 87 and the table. The controller 30 sets the tension of the film 53 on the downstream side (-Y side) of the bonding tool 20 according to the driving torque. The controller 30 operates the drive mechanism 87 so that the estimated tension is within a desired range. At this time, the controller 30 obtains the elongation amount of the film 53 according to the diameter of the movable nip roll 85 and the rotation angle of the movable nip roll 85 . If the diameter of the movable nip roller 85 is d ₈₅ , the circumference is π, and the rotation angle is θ ₈₅ (°), the controller 30 can also obtain the film 53 by the following equation 2. The elongation ΔL ₈₀ on the downstream side of . ΔL ₈₀ =d ₈₅ ×π×(θ ₈₅ /360°)･･･equation 2

The temperature sensor 61 is a surface that can be arranged on the bonding head 2 holding the bonding tool 20 . In addition, it may be buried in the bonding tool 20 . The temperature sensor 61 detects the temperature of the bonding tool 20 and supplies the detection result to the controller 30 .

The pressure sensor 62 is arranged on the bonding tool 20 or the bonding head 2 . The pressure sensor 62 detects the pressure applied from the bonding tool 20 to the semiconductor wafer 200 when the semiconductor wafer 200 is adsorbed and fixed by the bonding tool 20 , and supplies the detection result to the controller 30 .

The exhaust system 90 includes an exhaust pipe 91 and a vacuum device 92 . The exhaust pipe 91 is arranged between the bonding head 2 and the vacuum device 92 , and connects the exhaust hole 2 a of the bonding head 2 to the vacuum device 92 .

The vacuum device 92 supplies the negative pressure of the adsorption hole 23a through the exhaust pipe 91, the exhaust hole 2a, and the exhaust hole 23b. Thereby, vacuum suction of the semiconductor wafer 200 using the suction hole 23a is possible.

The vacuum device 92 supplies the negative pressure of the adsorption hole 24a through the exhaust pipe 91, the exhaust hole 2a, the exhaust hole 24c, and the exhaust hole 24b. Thereby, vacuum adsorption of the thin film 54 using the adsorption hole 24a becomes possible.

The semiconductor manufacturing apparatus 1 thermally press-bonds the semiconductor wafer 200 to a plurality of bump electrodes on the substrate 100 with the gaps filled with the adhesive resin 110 while interposing the film 53 between the back surface of the semiconductor wafer 200 and the bonding tool 20 . .

For example, when the application mechanisms 70 and 80 are not operated, when the semiconductor wafer 200 is heated, as shown in FIG. 2 , wrinkles CR1 and CR2 may be generated on the upstream side and the downstream side of the bonding tool 20 of the thin film 53 . Sex has. FIG. 2 is a diagram showing the operation of the semiconductor manufacturing apparatus 1 when the applying mechanisms 70 and 80 are not operated. As shown in FIG. 3 , the adhesive resin 110 extruded from the outer shape of the semiconductor wafer 200 may protrude remarkably from the wrinkles CR1 and CR2 propagated to the film 53 . FIG. 3 is a diagram showing a mounted state of the semiconductor device when the applying mechanisms 70 and 80 are not operated. That is, in flip-chip mounting using FAB, on the substrate 100 on the outer periphery of the semiconductor wafer 200, the protruding tapes 110a and the island tapes 110b of the adhesive resin 110 are generated due to the wrinkles of the film 53. That is, the protruding strips 110a and the island strips 110b are generated at the place where the film 53 is in contact with the substrate 100 by spreading the adhesive resin 110 through the film 53 in a state where the film 53 hangs down and contacts the substrate 100 . Therefore, stable extrusion of the adhesive resin 110 cannot be achieved, the semiconductor wafer may be peeled off from the substrate 100, or the adhesive resin 110 may contaminate adjacent wafers or adjacent parts, causing defects.

On the other hand, in the semiconductor manufacturing apparatus 1, once the film 53 starts to be stretched by heating, the tension of the film 53 is controlled by the upstream-side application mechanism 70 and the downstream-side application mechanism 80 so that the tension of the film 53 is maintained at a desired level, respectively. In the range. As a result, the occurrence of wrinkles CR1 and CR2 in the film 53 can be suppressed, and failure of mounting can be prevented.

Next, the operation of the semiconductor manufacturing apparatus 1 will be described with reference to FIGS. 4 to 11 . FIG. 4 is a flowchart showing the operation of the semiconductor manufacturing apparatus 1 . 5 , 6 , 10 , and 11 are process cross-sectional views showing a method of manufacturing a semiconductor wafer. FIG. 7 is a timing chart showing the operation of the semiconductor manufacturing apparatus 1 during bonding. FIG. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus 1 during bonding. FIG. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus 1 at the time of bonding.

The semiconductor manufacturing apparatus 1 performs the first bonding ( S10 ). In S10, the processes of S1 to S7 are performed.

FIG. 5( a ) shows the substrate 100 on which the adhesive resin 110 has been applied in advance with a predetermined track and an enlarged portion thereof. In FIG. 5( a ), an example is shown in which the adhesive resin 110 is applied on a substrate 100 including a plurality of rectangular regions corresponding to a plurality of semiconductor wafers in a locus along the diagonal lines of each rectangular region. The adhesive resin 110 is, for example, NCP. The substrate 100 is loaded into the semiconductor manufacturing apparatus 1 . The semiconductor manufacturing apparatus 1 is an apparatus for flip-chip mounting a semiconductor wafer. The loaded substrate 100 is transferred to a stage (thermocompression bonding stage) 10 heated by the heating element 12 (S1).

The semiconductor wafer is attached to the dicing film, diced, and separated into a plurality of semiconductor wafers, and the singulated semiconductor wafer 200 is peeled off from the dicing film (S2).

The film 53 is conveyed through the rollers 72 and the movable rollers 71 from the sending reel 51 in the feeding direction indicated by the dotted arrow in FIG. 5( b ) ( S3 ). Moreover, the film 53 is taken up by the take-up reel 52 while passing through the movable roller 81 and the roller 82 (S3a).

In the semiconductor manufacturing apparatus 1 , as shown in FIG. 5( b ), the thin film 53 is vacuum-sucked by the suction structures 23 and 24 of the bonding tool 20 . As shown in FIG. 5( c ), the semiconductor manufacturing apparatus 1 forms holes 53 a with pins 11 in a predetermined arrangement in the thin film 53 to which it is adsorbed and fixed ( S4 ).

Then, the transfer of the semiconductor wafer from the transfer system to the bonding tool 20 is performed ( S5 ). As shown in FIG. The back 200b is vacuum-adsorbed and fixed. In the semiconductor wafer 200, the front surface 200a is the surface on which the pattern of elements is formed, and the back surface 200b is the surface opposite to the front surface 200a. Electrode pads are arranged on the surface 200 a of the semiconductor wafer 200 , and the bump electrodes 210 are bonded to the electrode pads.

Then, the semiconductor manufacturing apparatus 1 performs a bonding operation (S6). Specifically, the operations shown in FIGS. 7 to 9 are performed. FIG. 7 is a timing chart showing the operation of the semiconductor manufacturing apparatus 1 . FIG. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus 1 . FIG. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus 1 .

In the period TP1 shown in FIG. 7 , the semiconductor manufacturing apparatus 1 analyzes the image of the alignment marks of the semiconductor wafer 200 captured by the imaging element (not shown), calculates the center position of the semiconductor wafer 200 in the XY direction, and the like, thereby identifying The position of the semiconductor wafer 200 (S6a). The semiconductor manufacturing apparatus 1 analyzes an image of an alignment mark of the substrate 100 captured by an imaging element (not shown), calculates the center position of the substrate 100 in the XY direction, etc., and recognizes the position of the substrate 100 (S6b). The semiconductor manufacturing apparatus 1 operates the stage 10 so that the alignment marks of the semiconductor wafer 200 and the alignment marks of the substrate 100 form a predetermined positional relationship to align the semiconductor wafer 200 and the substrate 100 . At this time, as shown in FIG. 8 , the heating control (refer to FIG. 9 ) of the first-stage heating (heating 1 ^st ) by the heating element 12 starts, but the bonding head 2 moves toward the semiconductor wafer 200 and the substrate 100 . The load (joint head load) is not applied, and the load Fh forms the initial value F0.

In the period TP2 shown in FIG. 7 , once the semiconductor wafer 200 and the substrate 100 are aligned (searched and detected), the semiconductor manufacturing apparatus 1 starts the bonding head Z-axis control for moving the bonding head 2 in the Z direction (see FIG. 9 ). ), as shown in FIG. 6( b ), the bonding head 2 is lowered in the −Z direction ( S6c ) until the bump electrodes 210 on the −Z side of the semiconductor wafer 200 come into contact with the adhesive resin 110 , and the bonding tool is moved. 20 is close to platform 10. Once the bump electrodes 210 are in contact with the adhesive resin 110 , the descending speed of the bonding tool 20 is slightly moderated, and the bonding tool 20 is lowered to the −Z direction at the moderated speed, so that the bump electrodes 210 of the semiconductor wafer 200 are brought into contact with the adhesive resin 110 . Electrode pads on the substrate 100 .

In this state, according to the heating control (see FIG. 9 ), the heating operation of heating the semiconductor wafer 200 via the stage 10 and the substrate 100 is performed by the heating element 12 ( S6d ), and the temperature Th of the semiconductor wafer 200 is controlled. into T1. Then, the bonding head load control (refer to FIG. 9 ) in which the load is applied to the semiconductor wafer 200 and the substrate 100 by the bonding head 2 is started, and the bonding head load operation ( S6c ) is performed, and the load Fh to the semiconductor wafer 200 and the substrate 100 will be Controlled to F1.

In the period TP3 shown in FIG. 7 , the semiconductor manufacturing apparatus 1 relatively controls the distance between the bonding tool 20 and the stage 10 in such a manner that the conventional load Fh of the semiconductor wafer 200 and the substrate 100 is maintained at F1, and the semiconductor wafer 200 is The temperature Th rises from T1 to T2 (>T1).

Thereby, the first stage processing ( ^1st processing) is performed, the bump electrodes interposed between the semiconductor wafer 200 and the wiring of the substrate 100 are appropriately deformed, and the contact areas of the bump electrodes and the substrate can be ensured respectively.

In the period TP4 shown in FIG. 7 , the semiconductor manufacturing apparatus 1 relatively controls the distance between the bonding tool 20 and the stage 10 in such a manner that the conventional load Fh of the semiconductor wafer 200 and the substrate 100 is maintained at F1, and the semiconductor wafer 200 The temperature Th is maintained at T2. At this time, the Z position of the bonding tool 20 is controlled in the +Z direction or the −Z direction so that the pressing force is maintained at the target pressure Fh=F1. FIG. 7 is an example showing the case where the Z position of the bonding tool 20 is gradually controlled in the +Z direction.

Thereby, the second stage processing ( ^2nd processing) is performed, and the bump electrodes can be melted in a state where the contact area between the bump electrodes and the substrate is ensured. Thereby, the bump electrode can be suppressed from melting out to the periphery, and the bonding between the bump electrode and the substrate can be smoothly performed.

Then, in a period TP11 that starts almost at the same time as the period TP3 and ends in the middle of the period TP4, the semiconductor manufacturing apparatus 1 performs a calibration amount related to the elongation of the thin film 53 in parallel with the heating operation (S6d) and the bonding head loading operation (S6c). acquisition (S6f).

Specifically, in the semiconductor manufacturing apparatus 1 , as shown by the arrows with a one-dot chain line in FIG. 10( a ), the Y position of the movable roller 71 forms the movable limit position in the −Y direction and the movable limit position in the +Y direction. In the mode in the middle of the limit position, while controlling the driving mechanism 76, the nip roller 73 is monitored by the driving mechanism 77 in a state where the pressing member 74 presses the nip roller 73 against the film 53 and the movable nip roller 75. drive torque. In the semiconductor manufacturing apparatus 1 , a table showing the relationship between the control amount of the drive mechanism 77 and the drive torque is experimentally determined and set in advance, and the drive torque is obtained from the control amount of the drive mechanism 77 and the table and monitored. The semiconductor manufacturing apparatus 1 estimates the tension of the thin film 53 on the upstream side (-Y side) of the bonding tool 20 based on the driving torque. The semiconductor manufacturing apparatus 1 operates the drive mechanisms 76 and 77 so that the estimated tension is within a desired range as indicated by the arrows with dotted lines in FIG. 10( b ). Thereby, the rewinding of the film 53 on the upstream side (-Y side) of the bonding tool 20 is performed (S6f1). At this time, the controller 30 obtains the elongation amount of the film 53 according to the diameter of the movable nip roller 75 and the rotation angle of the movable nip roller 75 . If the diameter of the movable nip roll 75 is d ₇₅ , the circumference is π, and the rotation angle is θ ₇₅ (°), the semiconductor manufacturing apparatus 1 obtains the upstream side of the thin film 53 by Equation 1. The elongation ΔL ₇₀ . That is, the tension on the supply side is monitored, the film 53 on the supply side is wound up, and the winding amount of the film is measured (see FIG. 9 ).

In addition, in the semiconductor manufacturing apparatus 1, as shown by the arrow with a one-dot chain line in FIG. 10(a), the Y position of the movable roller 81 forms the movable limit position in the −Y direction and the movable limit position in the +Y direction. In an intermediate way, while controlling the driving mechanism 86, the driving torque of the movable nip roller 85 by the driving mechanism 87 is monitored while the pressing member 84 presses the nip roller 83 against the film 53 and the movable nip roller 85. . In the semiconductor manufacturing apparatus 1, a table showing the relationship between the control amount of the drive mechanism 87 and the drive torque is experimentally determined and set in advance, and the drive torque is obtained from the control amount of the drive mechanism 87 and the table and monitored. The semiconductor manufacturing apparatus 1 estimates the tension of the thin film 53 on the downstream side (-Y side) of the bonding tool 20 based on the driving torque. The semiconductor manufacturing apparatus 1 operates the drive mechanism 87 so that the estimated tension is within a desired range. Thereby, winding of the film 53 on the downstream side (+Y side) of the bonding tool 20 is performed ( S6f2 ). At this time, the semiconductor manufacturing apparatus 1 obtains the elongation amount of the film 53 according to the diameter of the movable nip roll 85 and the rotation angle of the movable nip roll 85 . If the diameter of the movable nip roll 85 is d ₈₅ , the circumference is π, and the rotation angle is θ ₈₅ (°), the semiconductor manufacturing apparatus 1 obtains the downstream side of the thin film 53 by Equation 2. The elongation ΔL ₈₀ . That is, the tension on the recovery side is monitored, the film 53 on the recovery side is wound up, and the winding amount of the film is measured (see FIG. 9 ).

The semiconductor manufacturing apparatus 1 maintains the calibration amount for controlling the winding amount of the film to be joined after the second time (refer to FIG. 9 ) once the calibration amount regarding the elongation of the film 53 is obtained.

In the period TP5 shown in FIG. 7 , as shown in FIG. 11 , in this state, the bonding tool 20 is raised in the +Z direction ( S7 ), and the bonding tool 20 is relatively separated from the stage 10 .

The semiconductor manufacturing apparatus 1 performs n-th bonding ( S20 ). n is an arbitrary integer of 2 or more. S20 is basically the same as S10, but at the next point, an operation different from that of S10 is performed.

After S2, the operation of the vacuum device 92 is stopped, the decompressed state of the piping 91 is released, the suction by the suction structures 23 and 24 of the bonding tool 20 is released, and the used film 53 is peeled off (S21). Then, as indicated by the arrows in FIG. 11 , from the sending reel 51 to the take-up reel 52 , the tape 53 is wound up by a predetermined amount so that a new tape 53 is positioned on the surface of the protrusion 22 of the bonding tool 20 -Z side of 22a (S21a). In addition, the timing of suction by the suction structures 23 and 24 after releasing the bonding and the timing of moving the bonding head away from the stage can be arbitrarily changed according to the size of the semiconductor wafer and the like. Then, S3 is performed.

After S5, the semiconductor manufacturing apparatus 1 performs the bonding operation (S26). In the bonding operation ( S26 ), in the periods TP1 to TP5 shown in FIG. 7 , the bonding head lowering operation ( S6 c ), the heating operation ( S6 d ), the bonding head loading operation ( S6 c ), and the bonding head raising operation are performed similarly to S10 (S7).

And in the period TP11 shown in FIG. 7, the winding operation|movement etc. for tension control of the film 53 using the calibration amount acquired in S6f etc. are performed (S26f).

Specifically, in the semiconductor manufacturing apparatus 1 , as indicated by the arrows with dotted lines in FIG. 10( b ), the Y position of the movable roller 71 forms the movable limit position in the −Y direction and the movable limit in the +Y direction. The mode in the middle of the position, while controlling the driving mechanism 76, the driving mechanism 77 operates according to the calibration amount in a state where the pressing member 74 presses the nip roller 73 against the film 53 and the movable nip roller 75. The movable nip roller 75 is rotated by the amount. Thereby, on the upstream side of the bonding tool 20, the film 53 is rewound so that the tension of the film 53 is within a desired range (S26f1).

In addition, in the semiconductor manufacturing apparatus 1, as indicated by the arrows with dotted lines in FIG. 10(b), the Y position of the movable roller 81 forms the movable limit position in the −Y direction and the movable limit position in the +Y direction. In the middle method, while controlling the driving mechanism 86, the driving mechanism 87 is used to operate the nip roller 83 by the movement amount corresponding to the calibration amount in a state where the pressing member 84 presses the nip roller 83 against the film 53 and the movable nip roller 85. The movable nip roller 85 rotates. Thereby, on the downstream side of the bonding tool 20, the film 53 is wound up so that the tension of the film 53 is within a desired range (S26f2).

The semiconductor manufacturing apparatus 1 repeats S20 (S2 to S7) until the semiconductor wafer in the portion (designated portion) of the semiconductor substrate is processed (No at S30). Once the semiconductor wafer in the portion (designated portion) of the semiconductor substrate has been processed and other wafers are not to be processed, the thermocompression bonding of all the semiconductor wafers in the semiconductor substrate is completed (Yes at S30 ), and the end The resulting semiconductor substrate is released from the device and transported to the next process.

As described above, in the present embodiment, the semiconductor manufacturing apparatus 1 is provided so that when the bonding tool 20 presses the semiconductor wafer 200 through the film 53 , the tension applied to the film 53 is applied to each of the upstream side and the downstream side of the bonding tool 20 . Institutions 70, 80. Thereby, the tension|tensile_strength of the film 53 can be controlled so that the tension|tensile_strength of the film|membrane 53 may fall within a desired range, and the wrinkles of a film|membrane can be reduced while the tape at the time of joining starts to expand|stretch. As a result, defects in joint mounting can be prevented.

In addition, as shown in FIG. 12 , the application mechanisms 170 and 180 of the semiconductor manufacturing apparatus 101 may apply tension to the thin film 53 by vertical driving instead of horizontal driving. FIG. 12 is a diagram showing the configuration of a semiconductor manufacturing apparatus 101 according to a modification of the embodiment. In FIG. 12 , illustration of the drive mechanism 41 , the drive mechanism 42 , the temperature sensor 61 , the pressure sensor 62 , and the exhaust system 90 is omitted for simplicity of illustration.

Instead of the movable roller 71 and the driving mechanism 76 (refer to FIG. 1 ), the imparting mechanism 170 has a roller 71a, a driving mechanism 176, and further includes a movable roller 171, a roller 172a, and a roller 172b.

The roller 71 a is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the surface of the projection portion 22 . The roller 71a can contact the film 53 from the +Y side. The position where the roller 71a is the axis of rotation will be fixed. The roller 71 a is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The movable roller 171 is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the surface of the projection portion 22 . The movable roller 171 is arranged between the roller 72 and the movable nip roller 75 and the nip roller 73 . The movable roller 71 can contact the film 53 from the +Z side. The drive mechanism 176 is, for example, a linear motor, and can move the rotating shaft of the movable roller 171 in the +Z direction and the -Z direction as indicated by the arrows with a dashed line under the control from the controller 30 . That is, the driving mechanism 176 is capable of moving (vertically driving) the rotating shaft of the movable roller 171 to the approaching direction (-Z direction) and the moving direction (+Z direction) to the contact with the film 53 . Thereby, the movable roller 171 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the point of contact with the film 53 . In addition, the movable roller 171 is not driven in relation to its rotation, and passively rotates by receiving the stress in the direction along the surface of the film 53 .

The roller 172 a is arranged on the −Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the movable roller 171 . The roller 172a is accessible to the film 53 from the -Z side. The position where the roller 172a is the axis of rotation will be fixed. The roller 172a is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The roller 172b is arranged on the −Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the movable roller 171 . The roller 172b is accessible to the film 53 from the -Z side. The position where the roller 172b is the axis of rotation will be fixed. The roller 172b is passively rotated by receiving the stress in the direction along the surface of the film 53 .

Instead of the movable roller 81 and the driving mechanism 86 (refer to FIG. 1 ), the imparting mechanism 180 has a roller 81a and a driving mechanism 186, and further includes a movable roller 181, a roller 182a, and a roller 182b.

The roller 81 a is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the surface of the protruding portion 22 . The roller 81a can contact the film 53 from the -Y side. The position where the roller 81a is the axis of rotation is fixed. The roller 81 a is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The movable roller 181 is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the surface of the protruding portion 22 . The movable roller 181 is arranged between the roller 82 and the movable nip roller 85 and the nip roller 83 . The movable roller 81 can contact the film 53 from the +Z side. The drive mechanism 186 is, for example, a linear motor, and can move the rotating shaft of the movable roller 181 in the +Z direction and the -Z direction as indicated by the arrows with a dashed line under the control from the controller 30 . That is, the drive mechanism 186 can move (vertically drive) the rotation shaft of the movable roller 181 to the approaching direction (-Z direction) and the moving direction (+Z direction) to the contact with the film 53 . Thereby, the movable roller 181 can adjust the stress applied to the film 53 in the direction perpendicular to the surface of the film 53 at the point of contact with the film 53 . In addition, the movable roller 181 is not driven in relation to its rotation, and passively rotates by receiving the stress in the direction along the surface of the film 53 .

The roller 182 a is arranged on the +Y side of the bonding tool 20 , and is arranged on the downstream side in the feeding direction of the film 53 with respect to the movable roller 181 . The roller 182a is accessible to the film 53 from the -Z side. The position where the roller 182a is the axis of rotation will be fixed. The roller 182a is passively rotated by receiving the stress in the direction along the surface of the film 53 .

The roller 182 b is arranged on the +Y side of the bonding tool 20 , and is arranged on the upstream side in the feeding direction of the film 53 with respect to the movable roller 181 . The roller 182b is accessible to the film 53 from the -Z side. The position where the roller 182b is the axis of rotation will be fixed. The roller 182b is passively rotated by receiving the stress in the direction along the surface of the film 53 .

In this way, the imparting mechanisms 170 and 180 of the semiconductor manufacturing apparatus 101 can also impart tension to the film 53 by vertically driving the rotating shafts of the movable rollers 171 and 181 .

Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can also be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and spirit of the invention, and are included in the invention described in the scope of claims and the scope of its equivalents.

1: Semiconductor manufacturing equipment 2: Splice head 2a: exhaust hole 10: Platform 10a: Surface 11: Needle 12: Heating element 20: Engagement tools 21: base 22: Protrusions 23: Adsorption structure 23a: adsorption hole 23b: Air vent 24: Adsorption structure 24a: adsorption hole 24b, 24c: Air vents 30: Controller 41: Drive mechanism 42: Drive mechanism 51: Send reel 52: take-up reel 53: Film 61: Temperature sensor 62: Pressure sensor 70: Empowering Institutions 71: Movable scroll wheel 71a: Roller 72: Roller 73: nip roller 74: Push member 75: Movable nip roller 76: Drive mechanism 77: Drive mechanism 78: Drive mechanism 80: Empowering Institutions 81: Movable scroll wheel 81a: Roller 82: Roller 83: Movable nip roller 84: nip roller 85: Push member 86: Drive mechanism 87: Drive mechanism 88: Drive mechanism 90: Exhaust system 91: Exhaust pipe 92: Vacuum device 100: Substrate 100a: Surface 101: Semiconductor Manufacturing Equipment 110: Then resin 110a: Ribbon emerges 110b: Islands Ribbon 170: Endowed Institutions 171: Movable scroll wheel 172a: Roller 172b: Roller 176: Drive Mechanism 180: Endowed Institutions 181: Movable scroll wheel 182a: Roller 182b: Roller 186: Drive Mechanism 200: Semiconductor wafer

1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to an embodiment. [ Fig. 2] Fig. 2 is a diagram showing the operation of the semiconductor manufacturing apparatus when the application mechanism of the embodiment is not operated. 3 is a diagram showing a mounting state of a semiconductor wafer when the application mechanism of the embodiment is not operated. 4 is a flowchart showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [ Fig. 5] Fig. 5 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [ Fig. 6] Fig. 6 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [ Fig. 7] Fig. 7 is a timing chart showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [ Fig. 8] Fig. 8 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. [ Fig. 9] Fig. 9 is a sequence diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. 10 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. 11 is a diagram showing the operation of the semiconductor manufacturing apparatus according to the embodiment. 12 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a modification of the embodiment.

1: Semiconductor manufacturing equipment

2: Splice head

2a: exhaust hole

10: Platform

10a: Surface

11: Needle

12: Heating element

20: Engagement tool

21: base

22: Protrusions

23: Adsorption structure

23a: adsorption hole

23b: Air vent

24: Adsorption structure

24a: adsorption hole

24b, 24c: Air vents

30: Controller

41: Drive mechanism

42: Drive mechanism

51: Send reel

52: take-up reel

53: Film

61: Temperature sensor

62: Pressure sensor

70: Empowering Institutions

71: Movable scroll wheel

72: Roller

73: nip roller

74: Push member

75: Movable nip roller

76: Drive mechanism

77: Drive mechanism

78: Drive mechanism

80: Empowering Institutions

81: Movable scroll wheel

82: Roller

83: Movable nip roller

84: nip roller

85: Push member

86: Drive mechanism

87: Drive mechanism

88: Drive mechanism

91: Exhaust pipe

92: Vacuum device

100: Substrate

100a: Surface

110: Then resin

200: Semiconductor wafer

Claims (6)

A semiconductor manufacturing apparatus comprising: a bonding tool for adsorbing a semiconductor wafer through a thin film; a heating unit for heating the semiconductor wafer; and a first imparting mechanism arranged on the thin film with respect to the bonding tool The upstream side in the feeding direction of the film is provided with tension to the film; the second application mechanism is arranged on the downstream side of the feeding direction of the film with respect to the bonding tool, and the tension is provided to the film; and the controller, The elongation amount of the film is obtained according to the amount of operation of the first imparting mechanism and the second imparting mechanism, and the controller obtains the elongation amount of the film during the first period of processing the first semiconductor wafer, The first applying means and the second applying means apply tension to the thin film in accordance with the elongation amount obtained above during the second period of processing the second semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1, further comprising a stage on which a substrate is placed, the bonding tool for adsorbing the semiconductor wafer in a state facing the main surface of the stage through the thin film, and the first The applying mechanism and the second applying mechanism respectively move the film partially in a direction approaching or moving away from the contact point of the film to apply tension. The semiconductor manufacturing apparatus according to claim 1, wherein: The first applying means winds the film in a direction opposite to the feeding direction to give tension, and the second applying means winds the film in the feeding direction to give tension. The semiconductor manufacturing apparatus according to claim 1, wherein the first applying means includes a first roller that is disposed on the upstream side in the feeding direction of the film with respect to the bonding tool, and is in contact with the film and the first drive mechanism, which can move the rotating shaft of the first roller to the direction of approaching and away from the contact point of the film, and the second imparting mechanism, which is provided with: a second roller, which is relatively The bonding tool is disposed on the downstream side in the feeding direction of the film, and contacts the film; and a second drive mechanism capable of moving the rotating shaft of the second roller to a position close to the contact point of the film. direction and the direction away from. The semiconductor manufacturing apparatus according to claim 4, wherein the first imparting mechanism further includes a third roller arranged on the upstream side in the feeding direction of the film with respect to the bonding tool, and in contact with the film; and a third driving mechanism capable of rotationally driving the third roller in a rotational direction corresponding to the opposite direction of the feeding direction, the second imparting mechanism further comprising: a fourth roller which is opposite to the feeding direction a bonding tool arranged on the downstream side in the feeding direction of the film and in contact with the film; and The fourth drive mechanism is capable of rotationally driving the fourth roller in a rotational direction corresponding to the feeding direction. The semiconductor manufacturing apparatus according to claim 5, wherein the controller controls the movement amount of the first roller by the first drive mechanism and the rotation amount of the third roller by the third drive mechanism in conjunction with each other, and The interlocking control is based on the movement amount of the second roller by the second drive mechanism and the rotation amount of the fourth roller by the fourth drive mechanism.

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