TW202129271A - Method for monitoring copper ion concentration - Google Patents

Method for monitoring copper ion concentration Download PDF

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TW202129271A
TW202129271A TW109101814A TW109101814A TW202129271A TW 202129271 A TW202129271 A TW 202129271A TW 109101814 A TW109101814 A TW 109101814A TW 109101814 A TW109101814 A TW 109101814A TW 202129271 A TW202129271 A TW 202129271A
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copper ion
ion concentration
copper
peak current
linear equation
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TW109101814A
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Chinese (zh)
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鄭文鋒
許吉昌
孫尚培
許宏瑋
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先豐通訊股份有限公司
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Abstract

The present invention relates to a monitoring method. The method comprises providing a test solution containing copper ions; providing a monitoring device; measuring a cyclic voltammetry curve of the test solution over a specific voltage interval by the monitoring device, wherein the cyclic voltammetry curve has a peak current; providing a plurality of copper ion standard solutions with various known concentrations of copper ions, measuring cyclic voltammetry curves of the copper ion standard solutions over the specific voltage interval by the monitoring device, wherein each of the cyclic voltammetry curves has its peak current, and determining a linear equation of Y=AX+B by plotting the known concentrations of copper ions versus the peak currents corresponding thereto, wherein Y is the peak current, A is a slope of the linear equation, X is the concentration of copper ions and B is an intercept of the linear equation; and substituting the measured peak current of the test solution into the linear equation to obtain a copper concentration of the test solution.

Description

銅離子濃度監控方法Copper ion concentration monitoring method

本發明係有關一種藉由循環伏安法定量測定銅離子濃度之監控方法。The invention relates to a monitoring method for quantitatively determining the concentration of copper ions by cyclic voltammetry.

在製備液晶顯示面板與印刷電路板的製程中,往往需要使用各種蝕刻溶液來進行金屬材料的蝕刻。蝕刻過程中產生的金屬離子會不斷累積於蝕刻溶液中,當蝕刻溶液中金屬離子的濃度升高到一定程度後,就會使得蝕刻溶液不堪使用,而成為蝕刻廢液。In the process of preparing liquid crystal display panels and printed circuit boards, various etching solutions are often used to etch metal materials. The metal ions generated during the etching process will continue to accumulate in the etching solution. When the concentration of the metal ions in the etching solution rises to a certain level, the etching solution will become unusable and become etching waste.

目前在工業中廣泛使用的蝕刻液體系有酸性氯化銅蝕刻液和鹼性氯化銅蝕刻液兩種。酸性氯化銅蝕刻液使用氯化銅作為蝕銅劑,並使用酸性氧化系統進行蝕銅劑的再生。鹼性氯化銅蝕刻液使用氯化銅與氨水絡合反應所生成的二價銅氨絡合物Cu(NH3 )4 Cl2 作為蝕銅劑,並與氧氣、NH4+ 和Cl- 反應,進行蝕銅劑的再生。而隨著蝕刻的進行,板件上的銅會被咬蝕而形成一價銅Cu(NH3 )2 Cl,因一價銅不溶於水,使二價銅的濃度隨著咬時而逐漸降低,導致蝕刻速度受到影響。At present, the etching solution system widely used in the industry includes acid copper chloride etching solution and alkaline copper chloride etching solution. The acid copper chloride etching solution uses copper chloride as the copper etching agent, and uses an acid oxidation system to regenerate the copper etching agent. Alkaline copper chloride, copper chloride etching solution used in the complexation reaction with ammonia generated by the cupric ammonia complex Cu (NH 3) 4 Cl 2 as the etching agent, copper, and oxygen, NH 4+ and Cl - in the reaction , Carry out the regeneration of the copper etching agent. As the etching progresses, the copper on the board will be bitten to form monovalent copper Cu(NH 3 ) 2 Cl. Because the monovalent copper is insoluble in water, the concentration of divalent copper gradually decreases with the biting time. , Causing the etching speed to be affected.

在本領域中,隨著廠商與產業別的不同,所用的蝕刻溶液配方與可容忍的金屬離子濃度都不盡相同。以國內某些薄膜電晶體液晶顯示器(thin film transistor liquid crystal display,TFT LCD)製造業者所使用的蝕刻溶液為例,當蝕刻溶液中銅離子的濃度到達約1000ppm時,蝕刻溶液就失去了蝕刻的能力,而必須更換新的蝕刻溶液。另外,在某些印刷電路板(print circuit board,PCB)廠商所利用的銅蝕刻的蝕刻溶液中,可容忍的銅離子濃度約為130g/L。In this field, as manufacturers and industries are different, the etching solution formula used and the tolerable metal ion concentration are not the same. Take the etching solution used by some domestic thin film transistor liquid crystal display (TFT LCD) manufacturers as an example. When the concentration of copper ions in the etching solution reaches about 1000 ppm, the etching solution loses its etching ability. Ability, and must be replaced with a new etching solution. In addition, in the copper etching etching solution used by some printed circuit board (PCB) manufacturers, the tolerable copper ion concentration is about 130 g/L.

一般控制鹼性蝕刻液濃度的方法為測量pH、比重計和溫度,但並無直觀的方法去監控測量溶液中一價銅的濃度;另,現有技術中亦有利用螯合劑(例如EDTA)的化學反應來對銅離子進行螯合作用以控制溶液中的銅離子(Cu2+ )濃度,但因其無法精確地定量控制銅濃度,且有汙染槽液和發熱等副作用,造成銅的控制成效不彰、成本增加及具有潛在的危險性。另外,現有技術CN201686754U提出一種提銅的自動控制裝置,然而自動控制裝置是透過比重法進行廢液中銅離子濃度的量測,該方法對小體積溶液且低濃度(ppm)的銅離子的靈敏度不高,仍具有待改善的空間。The general method for controlling the concentration of alkaline etching solution is to measure pH, hydrometer and temperature, but there is no intuitive method to monitor the concentration of monovalent copper in the measurement solution; in addition, there are also chelating agents (such as EDTA) in the prior art. The chemical reaction is used to chelate copper ions to control the concentration of copper ions (Cu 2+ ) in the solution, but because it cannot accurately and quantitatively control the copper concentration, and it has side effects such as pollution of the bath and heat, resulting in the effectiveness of copper control Inappropriate, increased cost and potentially dangerous. In addition, the prior art CN201686754U proposes an automatic control device for copper extraction. However, the automatic control device measures the concentration of copper ions in the waste liquid through the specific gravity method. This method is sensitive to small-volume solutions and low-concentration (ppm) copper ions. Not high, there is still room for improvement.

有鑑於此,本發明提供一種藉由循環伏安法定量測定銅離子濃度之監控系統,為其主要目的者。In view of this, the present invention provides a monitoring system for quantitative determination of copper ion concentration by cyclic voltammetry, which is its main purpose.

為達上揭目的,本發明之監控方法包括以下步驟:提供一含有銅離子之待測溶液;提供一監控裝置;於一特定電位區間內,藉由該監控裝置測定該待測溶液之一循環伏安曲線,該循環伏安曲線具有一峰電流值;提供複數組濃度已知之銅離子標準溶液,於該特定電位區間,藉由該監控裝置測定該複數組標準溶液之循環伏安曲線,每一濃度之標準溶液之循環伏安曲線具有一峰電流值,以該複數組標準溶液之銅離子濃度值及其相對應之循環伏安曲線之峰電流值確定一線性方程式,該線性方程式為Y=AX+B,其中Y表示該峰電流值,A表示該線性方程式之斜率,X表示銅離子濃度,B表示該線性方程式之截距;以該線性方程式及該待測溶液之循環伏安曲線之峰電流值,確定該待測溶液之銅離子濃度。For the purpose of the above disclosure, the monitoring method of the present invention includes the following steps: providing a solution to be tested containing copper ions; providing a monitoring device; in a specific potential interval, the monitoring device measures a cycle of the solution to be tested Voltammetry curve, the cyclic voltammetry curve has a peak current value; a complex set of copper ion standard solutions with known concentrations are provided, and the monitoring device measures the cyclic voltammetry curve of the complex set of standard solutions in the specific potential interval. The cyclic voltammetry curve of the concentration standard solution has a peak current value, and a linear equation is determined by the copper ion concentration value of the complex set of standard solution and the peak current value of the corresponding cyclic voltammetry curve. The linear equation is Y=AX +B, where Y represents the peak current value, A represents the slope of the linear equation, X represents the copper ion concentration, and B represents the intercept of the linear equation; take the linear equation and the peak of the cyclic voltammetry curve of the solution to be tested The current value determines the copper ion concentration of the solution to be tested.

在一較佳態樣中,該監控裝置具有一容置槽,該容置槽配置有一流入口及一流出口,並有一工作電極、一輔助電極一參考電極、一安培計及一伏特計配置於該容置槽內,該伏特計係連接於該工作電極與該參考電極之間,且另有相連接之供電單元以及控制單元,該供電單元係與該工作電極以及該輔助電極電性連接,該安培計則連接於該輔助電極與該供電單元之間。In a preferred aspect, the monitoring device has a accommodating slot configured with a first-rate inlet and a first-rate outlet, and a working electrode, an auxiliary electrode, a reference electrode, an ammeter, and a voltmeter are arranged in the accommodating groove. In the accommodating tank, the voltmeter is connected between the working electrode and the reference electrode, and there are also connected power supply units and control units, the power supply unit is electrically connected to the working electrode and the auxiliary electrode, the ampere The meter is connected between the auxiliary electrode and the power supply unit.

在一較佳態樣中,該工作電極以及該輔助電極可以為鉑圓環電極。In a preferred aspect, the working electrode and the auxiliary electrode may be platinum ring electrodes.

在一較佳態樣中,該參考電極可以為飽和甘汞電極。In a preferred aspect, the reference electrode may be a saturated calomel electrode.

在一較佳態樣中,該特定電位區間為0.1~0.9伏特。In a preferred aspect, the specific potential interval is 0.1 to 0.9 volts.

在一較佳態樣中,該監控裝置係配置於一蝕刻槽,以連續方式對該蝕刻槽內之待測溶液進行監控。In a preferred aspect, the monitoring device is arranged in an etching tank to monitor the solution to be tested in the etching tank in a continuous manner.

在一更佳態樣中,該線性方程式中A值係為54.019,B值係為(-0.4159)。In a better aspect, the A value in the linear equation is 54.019, and the B value is (-0.4159).

為利 貴審查員瞭解本創作之技術特徵、內容與優點及其所能達成之功效,茲將本創作配合附圖,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本創作實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本創作於實際實施上的權利範圍,合先敘明。In order to help your examiners understand the technical features, content and advantages of this creation and its achievable effects, this creation is accompanied by drawings and detailed descriptions in the form of embodiments are as follows, and the diagrams used therein are as follows: The subject matter is only for illustrative and auxiliary manual purposes, and may not be the true proportions and precise configuration after the implementation of the creation. Therefore, the scale and configuration relationship of the attached drawings should not be interpreted or limited to the scope of rights of the creation in actual implementation. Hexian stated.

請參閱第1圖所示為本發明中監控裝置之結構示意圖所示。本發明之監控裝置1至少包含:一容置槽10、一工作電極21、一輔助電極22、一參考電極23、一供電單元30、一控制單元40、一安培計51以及一伏特計52;其中:Please refer to Fig. 1 which is a schematic diagram showing the structure of the monitoring device in the present invention. The monitoring device 1 of the present invention at least includes: a containing tank 10, a working electrode 21, an auxiliary electrode 22, a reference electrode 23, a power supply unit 30, a control unit 40, an ammeter 51 and a voltmeter 52; wherein :

該容置槽10配置有一流入口11及一流出口12,請同時參閱第2圖所示,該容置槽10內進一步設有至少一隔板13,該隔板13一端係固定於該容置槽10內側壁面,另端則與容置槽10內側壁面具有間距,如圖所示之實施例中,係設置有三個隔板13,可將容置槽10區隔成一蜿蜒的施體流道。The accommodating tank 10 is equipped with a first-rate inlet 11 and a first-rate outlet 12. Please also refer to FIG. The inner side wall surface of the groove 10, and the other end is spaced from the inner side wall surface of the containing groove 10. In the embodiment shown in the figure, three partitions 13 are provided to partition the containing groove 10 into a serpentine donor flow. road.

該工作電極21、該輔助電極22以及該參考電極23係配置於該容置槽10內,該工作電極21係與該參考電極23連接一伏特計52,而該工作電極21以及該輔助電極22係部分外露於該容置槽10並與該供電單元30電性連接,在供電單元30和輔助電極22間連接一安培計51,且該供電單元30則與該控制單元40電性連接,由該控制單元40於一預定電壓下,由伏特計52監控電位值,由安培計51監控電流值的變化;其中,該工作電極21以及該輔助電極22可以為鉑圓環電極,該參考電極23可以為飽和甘汞電極,且如圖所示之實施例中,該工作電極21以及該輔助電極22可分別為兩個圓環位於同一圓棒上,而該參考電極23則獨立位於另一圓棒上。The working electrode 21, the auxiliary electrode 22, and the reference electrode 23 are arranged in the accommodating groove 10, the working electrode 21 is connected to the reference electrode 23 with a voltmeter 52, and the working electrode 21 and the auxiliary electrode 22 are Partly exposed in the accommodating tank 10 and electrically connected to the power supply unit 30, an ammeter 51 is connected between the power supply unit 30 and the auxiliary electrode 22, and the power supply unit 30 is electrically connected to the control unit 40. The control unit 40 monitors the potential value by the voltmeter 52 under a predetermined voltage, and the current value change by the ammeter 51; wherein, the working electrode 21 and the auxiliary electrode 22 may be platinum ring electrodes, and the reference electrode 23 may be Saturated calomel electrode, and in the embodiment shown in the figure, the working electrode 21 and the auxiliary electrode 22 can be two rings located on the same round rod, and the reference electrode 23 is independently located on the other round rod.

本發明較佳實施例之監控方法以測定蝕刻槽中之鹼性蝕刻液為例進行說明。其具體包括以下步驟:取適量蝕刻槽中之含有銅離子之待測溶液放置於容置槽10中。藉由所述監控裝置1,對容置槽10中之待測溶液進行循環伏安掃描,其具體步驟為:將工作電極21、輔助電極22及參考電極23置於容置槽10中,並與待測溶液接觸,設定供電單元30之特定電位區間為0.1伏特~0.9伏特,開啟該供電單元30,於所述電位區間內循環掃描,記錄工作電極21之電位值及與其相對應之電流值,控制單元40根據所述之記錄之數據同步繪製循環伏安曲線。本實施例中,工作電極21之電位值為0.1伏特~0.9伏特之間時,會出現一個波峰,記錄該波峰所對應之峰電流值Ip。The monitoring method of the preferred embodiment of the present invention is described by taking the measurement of the alkaline etching solution in the etching tank as an example. It specifically includes the following steps: taking an appropriate amount of the solution to be tested containing copper ions in the etching tank and placing it in the containing tank 10. Using the monitoring device 1 to perform cyclic voltammetric scanning on the solution to be tested in the containing tank 10, the specific steps are: placing the working electrode 21, the auxiliary electrode 22 and the reference electrode 23 in the containing tank 10, and In contact with the solution to be tested, set the specific potential interval of the power supply unit 30 to 0.1V~0.9V, turn on the power supply unit 30, scan in the potential interval, and record the potential value of the working electrode 21 and the corresponding current value , The control unit 40 synchronously draws a cyclic voltammetry curve according to the recorded data. In this embodiment, when the potential value of the working electrode 21 is between 0.1 volt and 0.9 volt, a wave crest appears, and the peak current value Ip corresponding to the wave crest is recorded.

配置複數組已知濃度之銅離子標準溶液,其中該複數組標準溶液之銅離子濃度不同。藉由監控裝置1於0.1伏特~0.9伏特之電位掃描區間之條件下,分別對所述複數組標準溶液重複上述伏安掃描步驟,並記錄所述複數組標準溶液相對應之峰電流值。A complex set of copper ion standard solutions with known concentrations is configured, where the copper ion concentration of the complex set of standard solutions is different. With the monitoring device 1 under the condition of the potential scanning interval of 0.1V to 0.9V, the above-mentioned voltammetric scanning step is repeated on the plurality of standard solutions respectively, and the peak current values corresponding to the plurality of standard solutions are recorded.

依據所述複數組標準溶液之銅離子濃度值及其相對應之峰電流值,可以發現,所述複數組標準溶液之銅離子濃度值與其循環伏安曲線之峰電流值成一線性關係。因此,以該複數組標準溶液濃度值與相對應之循環伏安曲線之峰電流值可確定一線性方程。該線性方程式為Y=AX+B,其中Y表示該峰電流值,A表示該線性方程式之斜率,X表示銅離子濃度,B表示該線性方程式之截距。According to the copper ion concentration value of the multiple standard solution and its corresponding peak current value, it can be found that the copper ion concentration value of the multiple standard solution and the peak current value of its cyclic voltammetry curve are in a linear relationship. Therefore, a linear equation can be determined by using the complex number of standard solution concentration values and the corresponding peak current values of the cyclic voltammetry curve. The linear equation is Y=AX+B, where Y represents the peak current value, A represents the slope of the linear equation, X represents the copper ion concentration, and B represents the intercept of the linear equation.

將待測溶液所對應之循環伏安曲線之峰電流值代入該線性方程式,以此確定該待測溶液之銅離子濃度。The peak current value of the cyclic voltammetry curve corresponding to the test solution is substituted into the linear equation to determine the copper ion concentration of the test solution.

而本發明較佳實施例中,係以下列方式配置標準溶液,在五個可密封的塑膠瓶分別加入100ml的無一價銅蝕刻液,分別加入0.01、0.05、0.10、0.15、0.20克的銅粉到塑膠瓶,再將塑膠瓶密封30分鐘,則完成五組已知濃度之銅離子標準溶液,分別對所述五組標準溶液重複上述伏安掃描步驟,並記錄所述五組標準溶液相對應之峰電流值如下表:

Figure 02_image001
(註:橫坐標表示五組標準溶液,縱座標表示峰電流值。)In a preferred embodiment of the present invention, the standard solution is prepared in the following manner. Five sealable plastic bottles are each added with 100ml of monovalent copper-free etching solution, and 0.01, 0.05, 0.10, 0.15, 0.20 grams of copper are added respectively. Put the powder into the plastic bottle, and then seal the plastic bottle for 30 minutes to complete five sets of copper ion standard solutions with known concentrations. Repeat the voltammetric scanning steps for the five sets of standard solutions, and record the phases of the five sets of standard solutions. The corresponding peak current values are as follows:
Figure 02_image001
(Note: The abscissa represents five sets of standard solutions, and the ordinate represents the peak current value.)

由上表可得到一線性方程式為Y=54.019X-0.4159,再將待測溶液所對應之循環伏安曲線之峰電流值代入該線性方程式中的Y值,以此確定該待測溶液之銅離子濃度,亦即可以得知蝕刻槽中之鹼性蝕刻液之銅離子濃度。From the above table, a linear equation can be obtained as Y=54.019X-0.4159, and then the peak current value of the cyclic voltammetry curve corresponding to the solution to be tested is substituted into the Y value in the linear equation to determine the copper of the solution to be tested The ion concentration, that is, the copper ion concentration of the alkaline etching solution in the etching tank can be known.

另外,本發明之監控裝置可直接配置安裝於一蝕刻槽的流通槽,利用流入口及流出口與該流通槽構成流通,以連續方式對該蝕刻槽內之待測溶液進行即時監控,並進一步配合一光電感測器,來計算通過蝕刻槽的板件數,不僅利用本發明之監控方法可以監控蝕刻液中一價銅離子濃度,並可利用光電感測器得知所對應的板件數,藉以控制板件的生產量,亦可控制鹼性蝕刻液的添加及再生,可維持穩定的蝕刻速度,以穩定生產品質。In addition, the monitoring device of the present invention can be directly configured and installed in a circulation groove of an etching groove, and the flow inlet and outlet are used to form a circulation with the circulation groove, and the solution to be tested in the etching groove is continuously monitored in a continuous manner, and further Cooperate with a photoelectric sensor to calculate the number of plates passing through the etching slot. Not only can the monitoring method of the present invention be used to monitor the concentration of monovalent copper ions in the etching solution, but also the corresponding number of plates can be known by the photoelectric sensor By controlling the production volume of the panels, the addition and regeneration of the alkaline etching solution can also be controlled, and a stable etching speed can be maintained to stabilize the production quality.

以上諸實施例僅供說明本發明之用,而並非對本發明的限制,相關領域的技術人員,在不脫離本發明的技術範圍做出的各種修改或變化也應屬於本發明的保護範疇。The above embodiments are only used to illustrate the present invention, but not to limit the present invention. Various modifications or changes made by those skilled in the relevant fields without departing from the technical scope of the present invention should also fall within the protection scope of the present invention.

1:監控裝置 10:容置槽 11:流入口 12:流出口 13:隔板 21:工作電極 22:輔助電極 23:參考電極 30:供電單元 40:控制單元 51:安培計 52:伏特計1: Monitoring device 10: accommodating slot 11: Inlet 12: Outlet 13: partition 21: working electrode 22: auxiliary electrode 23: Reference electrode 30: power supply unit 40: control unit 51: Ammeter 52: Voltmeter

第1圖係為本發明中監控裝置之結構示意圖;以及 第2圖係為本發明中容置槽之結構立體圖。Figure 1 is a schematic diagram of the structure of the monitoring device in the present invention; and Figure 2 is a three-dimensional view of the structure of the accommodating groove in the present invention.

1:監控裝置1: Monitoring device

10:容置槽10: accommodating slot

11:流入口11: Inlet

12:流出口12: Outlet

21:工作電極21: working electrode

22:輔助電極22: auxiliary electrode

23:參考電極23: Reference electrode

30:供電單元30: power supply unit

40:控制單元40: control unit

51:安培計51: Ammeter

52:伏特計52: Voltmeter

Claims (8)

一種銅離子濃度監控方法,其包括以下步驟: 提供一含有銅離子之待測溶液; 提供一監控裝置; 於一特定電位區間內,藉由該監控裝置測定該待測溶液之一循環伏安曲線,該循環伏安曲線具有一峰電流值; 提供複數組濃度已知之銅離子標準溶液,於該特定電位區間,藉由該監控裝置測定該複數組標準溶液之循環伏安曲線,每一濃度之標準溶液之循環伏安曲線具有一峰電流值,以該複數組標準溶液之銅離子濃度值及其相對應之循環伏安曲線之峰電流值確定一線性方程式,該線性方程式為Y=AX+B,其中Y表示該峰電流值,A表示該線性方程式之斜率,X表示銅離子濃度,B表示該線性方程式之截距;以及 以該線性方程式及該待測溶液之循環伏安曲線之峰電流值,確定該待測溶液之銅離子濃度。A method for monitoring the concentration of copper ions, which includes the following steps: Provide a test solution containing copper ions; Provide a monitoring device; In a specific potential interval, a cyclic voltammetry curve of the solution to be tested is measured by the monitoring device, and the cyclic voltammetry curve has a peak current value; Provide a complex set of copper ion standard solutions with known concentrations, and measure the cyclic voltammetry curve of the complex set of standard solutions by the monitoring device in the specific potential interval. The cyclic voltammetry curve of the standard solution of each concentration has a peak current value, Determine a linear equation with the copper ion concentration value of the complex set of standard solutions and the peak current value of the corresponding cyclic voltammetry curve. The linear equation is Y=AX+B, where Y represents the peak current value, and A represents the peak current value. The slope of the linear equation, X represents the copper ion concentration, and B represents the intercept of the linear equation; and The linear equation and the peak current value of the cyclic voltammetry curve of the test solution are used to determine the copper ion concentration of the test solution. 如請求項1所述之銅離子濃度監控方法,其中,該監控裝置具有一容置槽,該容置槽配置有一流入口及一流出口,並有一工作電極、一輔助電極一參考電極、一安培計及一伏特計配置於該容置槽內,該伏特計係連接於該工作電極與該參考電極之間,且另有相連接之供電單元以及控制單元,該供電單元係與該工作電極以及該輔助電極電性連接,該安培計則連接於該輔助電極與該供電單元之間。The copper ion concentration monitoring method according to claim 1, wherein the monitoring device has a accommodating tank, the accommodating tank is configured with a first-rate inlet and a first-rate outlet, and has a working electrode, an auxiliary electrode, a reference electrode, and an ampere Considering that a voltmeter is arranged in the accommodating groove, the voltmeter is connected between the working electrode and the reference electrode, and there is a power supply unit and a control unit connected to it, the power supply unit is connected to the working electrode and the auxiliary The electrodes are electrically connected, and the ammeter is connected between the auxiliary electrode and the power supply unit. 如請求項2所述之銅離子濃度監控方法,其中,該工作電極以及該輔助電極可以為鉑圓環電極。The copper ion concentration monitoring method according to claim 2, wherein the working electrode and the auxiliary electrode may be platinum ring electrodes. 如請求項2所述之銅離子濃度監控方法,其中,該參考電極可以為飽和甘汞電極。The copper ion concentration monitoring method according to claim 2, wherein the reference electrode may be a saturated calomel electrode. 如請求項2所述之銅離子濃度監控方法,其中,該容置槽內進一步設有至少一隔板。The method for monitoring the concentration of copper ions according to claim 2, wherein at least one partition is further provided in the containing tank. 如請求項1至4任一項所述之銅離子濃度監控方法,其中,該特定電位區間為0.1伏特~0.9伏特。The copper ion concentration monitoring method according to any one of claims 1 to 4, wherein the specific potential interval is 0.1 volts to 0.9 volts. 如請求項1至4任一項所述之銅離子濃度監控方法,其中,該監控裝置係配置於一蝕刻槽,以連續方式對該蝕刻槽內之待測溶液進行監控。The copper ion concentration monitoring method according to any one of claims 1 to 4, wherein the monitoring device is disposed in an etching tank to continuously monitor the solution to be tested in the etching tank. 如請求項1至4任一項所述之銅離子濃度監控方法,其中,該線性方程式中A值係為54.019,B值係為(-0.4159)。The copper ion concentration monitoring method according to any one of claims 1 to 4, wherein the value A in the linear equation is 54.019 and the value B is (-0.4159).
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