TW202126461A - Composition, method for producing antenna, and molded article - Google Patents

Composition, method for producing antenna, and molded article Download PDF

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TW202126461A
TW202126461A TW109128772A TW109128772A TW202126461A TW 202126461 A TW202126461 A TW 202126461A TW 109128772 A TW109128772 A TW 109128772A TW 109128772 A TW109128772 A TW 109128772A TW 202126461 A TW202126461 A TW 202126461A
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composition
antenna
dielectric
ratio
less
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TW109128772A
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Chinese (zh)
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山邊敦美
細田朋也
笠井渉
佐藤崇
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日商Agc股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0001Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor characterised by the choice of material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/16Solid spheres
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C08L27/18Homopolymers or copolymers or tetrafluoroethene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/34Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3456Antennas, e.g. radomes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Provided are: a composition which has excellent dielectric properties and adhesiveness and can be injection-molded or compression-molded on a substrate; a method for producing a high-performance antenna including the substrate molded from the composition; and a molded article molded from a molding. The composition according to the present invention includes a heat-meltable polymer containing a unit based on a tetrafluoroethylene, and is used for forming a substrate having a dielectric loss tangent of at most 0.05 by means of injection molding or compression molding. In addition, a method for producing an antenna according the present invention is: a method for producing an antenna provided with a molded portion holding an antenna pattern formed by means of an injection molding; or a method for producing an antenna provided with a matching layer covering an antenna pattern formed by means of a compression molding.

Description

組合物、天線之製造方法及成形品Composition, antenna manufacturing method and molded product

本發明係關於一種含有特定之熱熔融性聚合物之組合物、以及使用該組合物之天線之製造方法及成形品。The present invention relates to a composition containing a specific hot-melt polymer, and a manufacturing method and molded article of an antenna using the composition.

隨著行動電話、智慧型手機等可攜式通信設備之小型化,搭載於其中之天線(晶片天線)不斷小型化。 該小型天線通常具有:天線圖案,其包含導電體;及基體(介電基體),其保持該天線圖案,且包含樹脂等介電體(參照專利文獻1)。 專利文獻1中,將天線圖案作為嵌入零件,並將介電體加以射出成形而形成基體,製造出使天線圖案與基體一體化之小型天線。 先前技術文獻 專利文獻With the miniaturization of portable communication devices such as mobile phones and smart phones, the antennas (chip antennas) mounted in them continue to be miniaturized. This small antenna generally has an antenna pattern that includes a conductor; and a base (dielectric base) that holds the antenna pattern and includes a dielectric such as resin (see Patent Document 1). In Patent Document 1, an antenna pattern is used as an embedded part, and a dielectric body is injection-molded to form a base, and a small antenna in which the antenna pattern and the base are integrated is manufactured. Prior art literature Patent literature

專利文獻1:國際公開2013/137404號Patent Document 1: International Publication No. 2013/137404

[發明所欲解決之問題][The problem to be solved by the invention]

就天線之進一步高性能化(天線增益之提昇)之觀點而言,需要介電特性優異之介電體。然而,根據本發明人等之研究,專利文獻1之介電體(介電基體)仍不充分。又,專利文獻1中,雖然使天線圖案與介電基體一體化,但其等間之接著性亦不充分。 本發明人等為改善該等情況而進行了銳意研究。結果發現,若含有特定之熱熔融性聚合物,則可製備出電特性及接著性優異、且適合射出成形或壓縮成形之組合物。 本發明之目的在於提供一種可藉由射出成形或壓縮成形而形成接著性優異且介電損耗正切較低之基體之組合物、具備由該組合物形成之基體之高性能天線之製造方法、及由上述成形物成形之成形品。 [解決問題之技術手段]From the viewpoint of further enhancement of antenna performance (an increase in antenna gain), a dielectric body with excellent dielectric properties is required. However, according to research conducted by the inventors of the present invention, the dielectric body (dielectric substrate) of Patent Document 1 is still insufficient. In addition, in Patent Document 1, although the antenna pattern and the dielectric substrate are integrated, the adhesiveness between them is also insufficient. The inventors of the present invention conducted intensive research to improve these situations. As a result, it was found that if a specific hot-melt polymer is contained, a composition having excellent electrical properties and adhesiveness and suitable for injection molding or compression molding can be prepared. The object of the present invention is to provide a composition capable of forming a matrix with excellent adhesion and low dielectric loss tangent by injection molding or compression molding, a method for manufacturing a high-performance antenna having a matrix formed from the composition, and A molded product formed from the above molded product. [Technical means to solve the problem]

本發明具有下述形態。 <1>一種組合物,其含有包含基於四氟乙烯之單元之熱熔融性聚合物,且用於藉由射出成形或壓縮成形而形成介電損耗正切為0.05以下之基體。 <2>如上述<1>之組合物,其中上述基體為天線之成形部或整合層。 <3>如上述<1>或<2>之組合物,其中上述基體為天線之成形部或整合層,且上述成形部或上述整合層之厚度為1 cm以下。 <4>如上述<1>至<3>中任一項之組合物,其進而含有介電常數為1.5以上之介電體填料,且上述基體之介電常數超過1.5。 <5>如上述<4>之組合物,其中上述介電體填料為平均粒徑2 μm以下之球狀填料、或長度30 μm以下且直徑2 μm以下之纖維狀填料。 <6>如上述<4>或<5>之組合物,其中上述介電體填料於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1/10~1/1。 <7>如上述<1>至<6>中任一項之組合物,其中上述熱熔融性聚合物含有基於全氟(烷基乙烯基醚)、六氟丙烯或氟烷基乙烯之單元。 <8>如上述<1>至<7>中任一項之組合物,其進而含有聚四氟乙烯。 <9>如上述<1>至<8>中任一項之組合物,其進而含有聚四氟乙烯,上述聚四氟乙烯於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1以下,且該組合物用於藉由射出成形而形成上述基體。 <10>如上述<1>至<9>中任一項之組合物,其進而含有聚四氟乙烯,上述聚四氟乙烯於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1以上,且該組合物用於藉由壓縮成形而形成上述基體。 <11>一種天線之製造方法,其係製造具備天線圖案、及介電損耗正切為0.05以下且保持上述天線圖案之成形部之天線之方法,且其係設為於將如上述<1>至<10>中任一項之組合物射出至具有與上述成形部對應之形狀之模具內而形成上述成形部時,上述成形模具內已配置上述天線圖案之狀態,或者於形成上述成形部後將上述成形部與上述天線圖案加以組裝。 <12>一種天線之製造方法,其係製造具備天線圖案、及介電損耗正切為0.05以下且覆蓋上述天線圖案之整合層之天線之方法,且其係於將如上述<1>至<8>及<10>中任一項之組合物供給至具有與上述整合層對應之形狀之模具內並進行壓縮而形成整合層後,將上述整合層與上述天線圖案加以組裝。 <13>如上述<12>之製造方法,其於上述整合層之與上述天線圖案為相反側之面進而形成金屬層。 <14>一種成形品,其係藉由射出成形或壓縮成形由如上述<1>至<10>中任一項之組合物形成。 <15>如上述<14>之成形品,其中上述成形品為天線。 [發明之效果]The present invention has the following aspects. <1> A composition containing a hot-melt polymer containing tetrafluoroethylene-based units and used for forming a matrix with a dielectric loss tangent of 0.05 or less by injection molding or compression molding. <2> The composition as in the above <1>, wherein the substrate is the molded part or the integrated layer of the antenna. <3> The composition as in the above <1> or <2>, wherein the substrate is the molded part or the integrated layer of the antenna, and the thickness of the molded part or the integrated layer is 1 cm or less. <4> The composition according to any one of the above <1> to <3>, which further contains a dielectric filler having a dielectric constant of 1.5 or more, and the dielectric constant of the substrate exceeds 1.5. <5> The composition according to the above <4>, wherein the dielectric filler is a spherical filler having an average particle diameter of 2 μm or less, or a fibrous filler having a length of 30 μm or less and a diameter of 2 μm or less. <6> The composition of the above <4> or <5>, wherein the ratio of the dielectric filler in the composition to the ratio of the hot melt polymer in the composition is The ratio of the mass meter is 1/10 to 1/1. <7> The composition according to any one of the above <1> to <6>, wherein the hot melt polymer contains a unit based on perfluoro(alkyl vinyl ether), hexafluoropropylene or fluoroalkyl ethylene. <8> The composition according to any one of the above <1> to <7>, which further contains polytetrafluoroethylene. <9> The composition according to any one of the above <1> to <8>, which further contains polytetrafluoroethylene, and the proportion of the polytetrafluoroethylene in the composition relative to the hot melt polymer The ratio by mass of the ratio in the above composition is 1 or less, and the composition is used to form the above matrix by injection molding. <10> The composition according to any one of the above <1> to <9>, which further contains polytetrafluoroethylene, and the ratio of the polytetrafluoroethylene in the composition to the hot melt polymer The ratio by mass of the ratio in the above composition is 1 or more, and the composition is used to form the above matrix by compression molding. <11> A method of manufacturing an antenna, which is a method of manufacturing an antenna having an antenna pattern and a dielectric loss tangent of 0.05 or less and maintaining a molded part of the antenna pattern, and it is set as the above-mentioned <1> to When the composition of any one of <10> is injected into a mold having a shape corresponding to the molded part to form the molded part, the antenna pattern is already placed in the molded mold, or the molded part is formed The molded part and the antenna pattern are assembled. <12> A manufacturing method of an antenna, which is a method of manufacturing an antenna with an antenna pattern and a dielectric loss tangent of 0.05 or less and covering the integrated layer of the antenna pattern, and it is based on the above-mentioned <1> to <8 After the composition of any one of> and <10> is supplied into a mold having a shape corresponding to the integration layer and compressed to form an integration layer, the integration layer and the antenna pattern are assembled. <13> The manufacturing method of the above <12>, in which a metal layer is further formed on the surface of the integration layer opposite to the antenna pattern. <14> A molded product formed from the composition of any one of the above <1> to <10> by injection molding or compression molding. <15> The molded product of the above-mentioned <14>, wherein the molded product is an antenna. [Effects of Invention]

根據本發明,可獲得適合接著性優異且介電損耗正切較低之基體之成形之射出成形或壓縮成形用組合物、及高性能天線。According to the present invention, it is possible to obtain a composition for injection molding or compression molding suitable for molding a substrate with excellent adhesiveness and low dielectric loss tangent, and a high-performance antenna.

以下用語具有以下含義。 所謂「熱熔融性聚合物」,意指表現出熔融流動性之聚合物,意指於荷重49 N之條件下,於較聚合物之熔融溫度高20℃以上之溫度中存在熔融流動速度成為0.1~1000 g/10分鐘之溫度之聚合物。 所謂「熔融流動速度(MFR)」,意指JIS K 7210: 1999(ISO 1133: 1997)所規定之聚合物之熔體質量流率。 「聚合物之熔融溫度(熔點)」為利用示差掃描熱量測定(DSC)法所測得之與聚合物之熔解峰之最大值對應之溫度。 「組合物之熔融黏度」為依據JIS K 7199: 1999(ISO 11443: 1995)所測得之剪切速度1000/秒下之值。 「平均粒徑」係使成為對象之粒子(粉末、填料等)分散於水中,藉由使用雷射繞射、散射式之粒度分佈測定裝置(堀場製作所公司製造、LA-920測定器)之雷射繞射、散射法進行分析而求出。即,藉由雷射繞射、散射法測定粒子之粒度分佈,將粒子集群之總體積設為100%而求出累積曲線,該累積曲線上累積體積成為50%之點為平均粒徑(D50)。再者,將粒子集群之總體積設為100%而求出累積曲線,將該累積曲線上累積體積成為10%之點設為D10。 「十點平均粗糙度(Rzjis)」為JIS B 0601: 2013之附件JA所規定之值。 本發明中之「介電常數」意指亦稱為相對介電常數之相對於真空之介電常數之相對的介電常數。 聚合物中之「單元」可為藉由聚合反應而由單體直接形成之原子團,亦可為利用特定之方法對藉由聚合反應所獲得之聚合物進行處理而獲得之結構之一部分經轉化之原子團。亦將聚合物中包含之基於單體A之單元簡稱為「單體A單元」。The following terms have the following meanings. The so-called "hot-melt polymer" means a polymer that exhibits melt fluidity. It means that under a load of 49 N, the melt flow rate becomes 0.1 at a temperature higher than the melting temperature of the polymer by 20°C or more. ~1000 g/10 minutes temperature polymer. The so-called "melt flow rate (MFR)" refers to the melt mass flow rate of the polymer specified in JIS K 7210: 1999 (ISO 1133: 1997). The "melting temperature (melting point) of the polymer" is the temperature corresponding to the maximum value of the melting peak of the polymer measured by the differential scanning calorimetry (DSC) method. The "melt viscosity of the composition" is the value measured at a shear rate of 1000/sec in accordance with JIS K 7199: 1999 (ISO 11443: 1995). "Average particle size" is to disperse the target particles (powders, fillers, etc.) in water by using a laser diffraction, scattering type particle size distribution measuring device (Horiba Manufacturing Co., Ltd., LA-920 measuring device). It is determined by analysis by diffraction and scattering methods. That is, the particle size distribution of particles is measured by laser diffraction and scattering methods, and the total volume of the particle cluster is set to 100% to obtain a cumulative curve. The point on the cumulative curve where the cumulative volume becomes 50% is the average particle diameter (D50 ). Furthermore, a cumulative curve is obtained by setting the total volume of the particle cluster to 100%, and the point on the cumulative curve at which the cumulative volume becomes 10% is D10. "Ten-point average roughness (Rzjis)" is the value specified in Annex JA of JIS B 0601: 2013. The "dielectric constant" in the present invention means the relative permittivity, which is also called the relative permittivity, relative to the permittivity of vacuum. The "unit" in a polymer can be an atomic group directly formed from a monomer by a polymerization reaction, or it can be a part of a structure obtained by processing a polymer obtained by a polymerization reaction by a specific method. Atomic group. The monomer A-based unit contained in the polymer is also abbreviated as "monomer A unit".

本發明之組合物含有包含基於四氟乙烯(TFE)之單元之熱熔融性聚合物(以下亦稱為「F聚合物」),且用於藉由射出成形或壓縮成形而形成介電損耗正切為0.05以下之基體(介電基體)。 本發明中之F聚合物表現出良好之熱熔融性,且其熔融黏度收斂於特定之範圍內,故於射出成形或壓縮成形時,易高密度地填充成形。其結果為,認為所形成之基體中不易形成氣泡(空氣層),從而因氣泡之存在所導致之介電特性之降低得到抑制。又,於組合物含有介電體填料等填料之情形時,填料易均勻且穩定地分散。其結果為,推測可形成表現出較低之介電損耗正切之基體。The composition of the present invention contains a hot-melt polymer containing tetrafluoroethylene (TFE)-based units (hereinafter also referred to as "F polymer"), and is used to form a dielectric loss tangent by injection molding or compression molding It is a matrix (dielectric matrix) of 0.05 or less. The F polymer in the present invention exhibits good thermal melting properties, and its melt viscosity converges within a specific range, so it can be easily filled with high density during injection molding or compression molding. As a result, it is considered that bubbles (air layer) are not easily formed in the formed substrate, and the decrease in dielectric properties due to the existence of bubbles is suppressed. In addition, when the composition contains fillers such as dielectric fillers, the fillers are easily dispersed uniformly and stably. As a result, it is presumed that a matrix exhibiting a lower dielectric loss tangent can be formed.

本發明中之基體之介電損耗正切為0.05以下。作為基體之介電損耗正切,較佳為0.04以下,更佳為0.03以下。其下限通常為0.001。 又,作為本發明中之基體之介電常數,較佳為超過1.5,更佳為2以上。進而,較佳為3以上,尤佳為4以上。其上限通常為10。本發明中之基體較佳為介電常數超過1.5且介電損耗正切為0.05以下,更佳為介電常數為2以上且介電損耗正切為0.05以下。再者,本說明書中之介電常數與介電損耗正切分別為於20 GHz下測得之值。 本發明中之基體尤其可用作天線之成形部或整合層而良好地用於提昇天線性能。該天線易發揮較高之性能(天線增益)。 此處,天線之成形部較佳為保持包含導電體之天線圖案之構件(保持構件)。天線之整合層係為了抑制流經天線圖案之電流之衰減而以覆蓋天線圖案之方式設置之層。 天線之成形部及整合層之厚度分別較佳為1 cm以下,更佳為0.5 mm以下,進而較佳為0.01 mm以下。本發明之組合物之成形性優異,可形成該較薄且介電特性優異之成形部或整合層。The dielectric loss tangent of the substrate in the present invention is 0.05 or less. The dielectric loss tangent of the substrate is preferably 0.04 or less, and more preferably 0.03 or less. The lower limit is usually 0.001. In addition, the dielectric constant of the substrate in the present invention is preferably more than 1.5, more preferably 2 or more. Furthermore, 3 or more is preferable, and 4 or more is especially preferable. The upper limit is usually 10. The substrate in the present invention preferably has a dielectric constant exceeding 1.5 and a dielectric loss tangent of 0.05 or less, and more preferably a dielectric constant of 2 or more and a dielectric loss tangent of 0.05 or less. Furthermore, the dielectric constant and dielectric loss tangent in this specification are the values measured at 20 GHz. The base in the present invention can be particularly used as a forming part or an integrated layer of an antenna and is well used to improve the performance of the antenna. The antenna is easy to exert higher performance (antenna gain). Here, the molded part of the antenna is preferably a member (holding member) that holds the antenna pattern including the conductor. The integrated layer of the antenna is a layer arranged to cover the antenna pattern in order to suppress the attenuation of the current flowing through the antenna pattern. The thickness of the molded part and the integrated layer of the antenna is preferably 1 cm or less, more preferably 0.5 mm or less, and still more preferably 0.01 mm or less. The composition of the present invention has excellent moldability, and can form the thinner molded part or integrated layer with excellent dielectric properties.

本發明中之F聚合物為含有基於TFE之單元(TFE單元)之熱熔融性聚合物。F聚合物可為TFE之均聚物,亦可為TFE與可與TFE共聚之其他單體(共聚單體)之共聚物。即,只要表現出熱熔融性,則F聚合物亦可為聚四氟乙烯(PTFE)。 F聚合物較佳為相對於構成聚合物之全部單元具有90~100 mol%之TFE單元。 F聚合物之氟含量較佳為70~76質量%,更佳為72~76質量%。若使用上述範圍之氟含量之F聚合物,則可謀求基體之介電特性之提昇(尤其是低介電損耗正切化)。The F polymer in the present invention is a hot melt polymer containing TFE-based units (TFE units). The F polymer can be a homopolymer of TFE, or a copolymer of TFE and other monomers (comonomers) copolymerizable with TFE. That is, the F polymer may be polytetrafluoroethylene (PTFE) as long as it exhibits hot melt properties. The F polymer preferably has 90-100 mol% of TFE units with respect to all units constituting the polymer. The fluorine content of the F polymer is preferably 70 to 76% by mass, more preferably 72 to 76% by mass. If the F polymer with the fluorine content in the above range is used, the dielectric properties of the matrix can be improved (especially low dielectric loss tangent).

作為F聚合物,可例舉:TFE與乙烯之共聚物(ETFE)、TFE與丙烯之共聚物、TFE與全氟(烷基乙烯基醚)(PAVE)之共聚物(PFA)、TFE與六氟丙烯(HFP)之共聚物(FEP)、TFE與氟烷基乙烯(FAE)之共聚物、TFE與三氟氯乙烯(CTFE)之共聚物。再者,該等共聚物亦可進而含有基於其他共聚單體之單元。Examples of F polymers include: copolymers of TFE and ethylene (ETFE), copolymers of TFE and propylene, copolymers of TFE and perfluoro (alkyl vinyl ether) (PAVE) (PFA), TFE and six Copolymer of fluoropropylene (HFP) (FEP), copolymer of TFE and fluoroalkyl ethylene (FAE), copolymer of TFE and chlorotrifluoroethylene (CTFE). Furthermore, these copolymers may further contain units based on other comonomers.

F聚合物較佳為含有TFE單元、以及PAVE單元、HFP單元或FAE單元。 作為PAVE,可例舉:CF2 =CFOCF3 、CF2 =CFOCF2 CF3 、CF2 =CFOCF2 CF2 CF3 (PPVE)、CF2 =CFOCF2 CF2 CF2 CF3 、CF2 =CFO(CF2 )8 F。 作為FAE,可例舉:CH2 =CH(CF2 )2 F、CH2 =CH(CF2 )3 F、CH2 =CH(CF2 )4 F、CH2 =CF(CF2 )3 H、CH2 =CF(CF2 )4 H。The F polymer preferably contains a TFE unit, and a PAVE unit, HFP unit or FAE unit. Examples of PAVE include: CF 2 =CFOCF 3 , CF 2 =CFOCF 2 CF 3 , CF 2 =CFOCF 2 CF 2 CF 3 (PPVE), CF 2 =CFOCF 2 CF 2 CF 2 CF 3 , CF 2 =CFO (CF 2 ) 8 F. Examples of FAE include: CH 2 =CH(CF 2 ) 2 F, CH 2 =CH(CF 2 ) 3 F, CH 2 =CH(CF 2 ) 4 F, CH 2 =CF(CF 2 ) 3 H , CH 2 =CF(CF 2 ) 4 H.

F聚合物之熔融黏度較佳為於380℃下為1×102 ~1×106 Pa・s,更佳為於300℃下為1×102 ~1×106 Pa・s。於該情形時,易於在更低溫下射出形成基體。 F聚合物之熔融溫度較佳為260~320℃,更佳為285~320℃。於該情形時,可良好地防止介電體填料之變質、劣化。 F聚合物之MFR較佳為20 g/10分鐘以下,更佳為10 g/10分鐘以下。於該情形時,易形成形狀更複雜之基體。 組合物之熔融黏度於剪切速度1000/秒下較佳為50~1000 Pa・s,且較佳為75~750 Pa・s。於該情形時,亦容易形成形狀更複雜之基體。F melt viscosity of the polymer is preferably at 380 deg.] C of 1 × 10 2 ~ 1 × 10 6 Pa · s, more preferably at 300 deg.] C of 1 × 10 2 ~ 1 × 10 6 Pa · s. In this case, it is easy to inject at a lower temperature to form a matrix. The melting temperature of the F polymer is preferably 260 to 320°C, more preferably 285 to 320°C. In this case, the deterioration and deterioration of the dielectric filler can be prevented well. The MFR of the F polymer is preferably 20 g/10 minutes or less, more preferably 10 g/10 minutes or less. In this case, it is easy to form a matrix with a more complicated shape. The melt viscosity of the composition is preferably 50-1000 Pa·s, and preferably 75-750 Pa·s at a shear rate of 1000/sec. In this case, it is also easy to form a matrix with a more complicated shape.

作為F聚合物之較佳之具體例,可例舉:改性PTFE、FEP、PFA。再者,改性PTFE為TFE與極微量之共聚單體(HFP、PAVE、FAE等)之共聚物等,且為表現出熱熔融性之PTFE。 作為F聚合物,較佳為具有極性官能基之F聚合物。極性官能基可包含於F聚合物中之單體單元中,亦可包含於聚合物之主鏈之末端基中。作為後者之聚合物,可例舉:以來自聚合起始劑、鏈轉移劑等之末端基之形式具有極性官能基之聚合物。又,亦可例舉對F聚合物進行電漿處理或電離輻射處理而獲得之具有極性官能基之F聚合物。 具有極性官能基之F聚合物較佳為包含具有極性官能基之單體單元(以下亦稱為「極性單元」)之F聚合物。以下亦將藉由聚合而成為極性單元之具有極性官能基之單體稱為「極性單體」。Preferred specific examples of the F polymer include modified PTFE, FEP, and PFA. Furthermore, modified PTFE is a copolymer of TFE and a very small amount of comonomers (HFP, PAVE, FAE, etc.), and it is PTFE that exhibits hot melt properties. As the F polymer, an F polymer having a polar functional group is preferred. The polar functional group may be contained in the monomer unit in the F polymer, or may be contained in the terminal group of the main chain of the polymer. As the latter polymer, a polymer having a polar functional group in the form of a terminal group derived from a polymerization initiator, a chain transfer agent, etc. can be mentioned. In addition, an F polymer having a polar functional group obtained by performing plasma treatment or ionizing radiation treatment on the F polymer can also be exemplified. The F polymer having a polar functional group is preferably an F polymer containing a monomer unit having a polar functional group (hereinafter also referred to as "polar unit"). Hereinafter, a monomer having a polar functional group that becomes a polar unit by polymerization is also referred to as a "polar monomer".

作為極性官能基,較佳為含羥基之基、含羰基之基、縮醛基及膦酸基(-OP(O)OH2 ),就進一步提高與其他構件(天線圖案等)之接著性之觀點而言,更佳為含羰基之基。 作為含羥基之基,較佳為含有醇性羥基之基,更佳為-CF2 CH2 OH、-C(CF3 )2 OH及1,2-二醇基(-CH(OH)CH2 OH)。 含羰基之基為包含羰基(>C(O))之基,作為含羰基之基,較佳為羧基、烷氧基羰基、醯胺基、異氰酸基、胺基甲酸酯基(-OC(O)NH2 )、酸酐殘基(-C(O)OC(O)-)、醯亞胺殘基(-C(O)NHC(O)-等)及碳酸酯基(-OC(O)O-)。The polar functional group is preferably a hydroxyl group-containing group, a carbonyl group-containing group, an acetal group and a phosphonic acid group (-OP(O)OH 2 ), which further improves the adhesion to other members (antenna patterns, etc.) From a viewpoint, a carbonyl group-containing group is more preferable. The hydroxyl group-containing group is preferably an alcoholic hydroxyl group-containing group, more preferably -CF 2 CH 2 OH, -C(CF 3 ) 2 OH, and 1,2-diol group (-CH(OH)CH 2 OH). The carbonyl group-containing group is a group containing a carbonyl group (>C(O)). As the carbonyl group-containing group, a carboxyl group, an alkoxycarbonyl group, an amide group, an isocyanate group, a urethane group (- OC(O)NH 2 ), acid anhydride residues (-C(O)OC(O)-), imine residues (-C(O)NHC(O)- etc.) and carbonate groups (-OC( O)O-).

作為具有含羰基之基之單體,進而較佳為伊康酸酐、檸康酸酐、5-降𦯉烯-2,3-二羧酸酐(別稱:雙環庚烯二甲酸酐,以下亦稱為「NAH」)及馬來酸酐。 作為具有極性官能基之F聚合物之較佳之具體例,可例舉:具有TFE單元、及HFP單元、PAVE單元或FAE單元、以及具有極性官能基之單元之F聚合物。The monomer having a carbonyl group-containing group is more preferably itaconic anhydride, citraconic anhydride, 5-norene-2,3-dicarboxylic anhydride (another name: bicycloheptene dicarboxylic anhydride, also referred to as " NAH”) and maleic anhydride. As a preferable specific example of the F polymer having a polar functional group, there can be mentioned: an F polymer having a TFE unit, an HFP unit, a PAVE unit or an FAE unit, and a unit having a polar functional group.

F聚合物較佳為相對於構成聚合物之全部單元,分別含有90~99 mol%之TFE單元、0.5~9.97 mol%之HFP單元、PAVE單元或FAE單元、及0.01~3 mol%之極性單元。作為該F聚合物之具體例,可例舉國際公開第2018/16644號中記載之聚合物。 於F聚合物具有極性官能基(尤其是含羰基之基)之情形時,基體對其他構件(天線圖案等)之接著性進一步提昇。The F polymer preferably contains 90 to 99 mol% of TFE units, 0.5 to 9.97 mol% of HFP units, PAVE units or FAE units, and 0.01 to 3 mol% of polar units relative to all units constituting the polymer. . As a specific example of the F polymer, the polymer described in International Publication No. 2018/16644 can be cited. When the F polymer has a polar functional group (especially a carbonyl group-containing group), the adhesion of the matrix to other members (antenna patterns, etc.) is further improved.

本發明之組合物較佳為進而含有除F聚合物以外之聚四氟乙烯(PTFE)。作為除F聚合物以外之PTFE,較佳為非熱熔融性之PTFE。該PTFE較佳為低分子量PTFE、經電子束處理之PTFE、經γ射線處理之PTFE。 用於藉由射出成形而形成基體之組合物中之PTFE相對於F聚合物之以質量計之比較佳為1以下,更佳為0.5以下,進而較佳為0.25以下。上述比通常為0.1以上。於該情形時,相對於PTFE而含有足夠量之F聚合物,易藉由射出成形而形成高度填充有F聚合物之基體。 用於藉由壓縮成形而形成基體之組合物中之PTFE相對於F聚合物之以質量計之比較佳為1以上,更佳為1.5以上,進而較佳為2以上。上述比之上限通常為5。於該情形時,相對於F聚合物而含有足夠量之PTFE,不僅易表現出壓縮成形性優異之PTFE之物性,而且易形成緊密接著性優異之基體。The composition of the present invention preferably further contains polytetrafluoroethylene (PTFE) in addition to the F polymer. As PTFE other than the F polymer, non-hot-melt PTFE is preferable. The PTFE is preferably low molecular weight PTFE, electron beam treated PTFE, or gamma ray treated PTFE. The mass ratio of PTFE to the F polymer in the composition for forming the matrix by injection molding is preferably 1 or less, more preferably 0.5 or less, and still more preferably 0.25 or less. The above-mentioned ratio is usually 0.1 or more. In this case, a sufficient amount of F polymer is contained relative to PTFE, and it is easy to form a matrix highly filled with F polymer by injection molding. The mass ratio of PTFE to the F polymer in the composition for forming the matrix by compression molding is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more. The upper limit of the above ratio is usually 5. In this case, if a sufficient amount of PTFE is contained relative to the F polymer, it is not only easy to exhibit the physical properties of PTFE with excellent compression moldability, but also to form a matrix with excellent adhesion.

本發明之組合物中之F聚合物之形狀較佳為粒狀。 用於藉由射出成形而形成基體之組合物中之F聚合物之形狀較佳為顆粒狀,更佳為3~5 mm之塊狀。於該情形時,不易損害射出成形性,易形成高度填充有F聚合物之基體。 用於藉由壓縮成形而形成基體之組合物中之F聚合物之形狀較佳為粉末狀。於粉末狀之情形時,其體積基準累積10%直徑較佳為0.1~10 μm,體積基準累積50%直徑較佳為0.3~50 μm。於該情形時,易形成緊密接著性優異之基體。The shape of the F polymer in the composition of the present invention is preferably granular. The shape of the F polymer used in the composition for forming the matrix by injection molding is preferably in the form of pellets, more preferably in the form of blocks of 3 to 5 mm. In this case, it is not easy to impair the injection moldability, and it is easy to form a matrix highly filled with F polymer. The shape of the F polymer used in the composition for forming a matrix by compression molding is preferably a powder. In the case of powder, the volume-based cumulative 10% diameter is preferably 0.1-10 μm, and the volume-based cumulative 50% diameter is preferably 0.3-50 μm. In this case, it is easy to form a matrix with excellent adhesion.

本發明之組合物較佳為進而含有介電體填料。 作為介電體填料於25℃下之介電常數,較佳為1.5以上,更佳為6以上。進而較佳為18以上,尤佳為25以上。介電常數之上限通常為1000。若使用具有上述範圍之介電常數之介電體填料,則可容易地對基體賦予優異之介電特性(高介電常數及低介電損耗正切)。本發明之組合物較佳為含有介電常數為1.5以上之介電體填料,且用於藉由射出成形或壓縮成形而形成介電常數超過1.5且介電損耗正切為0.05以下之基體。進而,本發明之組合物更佳為含有介電常數為6以上之介電體填料,且用於藉由射出成形或壓縮成形而形成介電常數為2以上且介電損耗正切為0.05以下之基體。 對於該介電體填料,可使用有機介電體填料及無機介電體填料之任一者。The composition of the present invention preferably further contains a dielectric filler. As the dielectric constant of the dielectric filler at 25°C, it is preferably 1.5 or more, more preferably 6 or more. It is more preferably 18 or more, and particularly preferably 25 or more. The upper limit of the dielectric constant is usually 1000. If a dielectric filler having a dielectric constant in the above range is used, excellent dielectric properties (high dielectric constant and low dielectric loss tangent) can be easily imparted to the substrate. The composition of the present invention preferably contains a dielectric filler with a dielectric constant of 1.5 or more, and is used to form a matrix with a dielectric constant of more than 1.5 and a dielectric loss tangent of 0.05 or less by injection molding or compression molding. Furthermore, the composition of the present invention preferably contains a dielectric filler having a dielectric constant of 6 or more, and is used to form a dielectric filler having a dielectric constant of 2 or more and a dielectric loss tangent of 0.05 or less by injection molding or compression molding. Matrix. For this dielectric filler, any one of an organic dielectric filler and an inorganic dielectric filler can be used.

作為有機介電體填料,可例舉包含硬化性樹脂之硬化物或非硬化性樹脂之填料。作為硬化性樹脂或非硬化性樹脂,可例舉:環氧樹脂、聚醯亞胺樹脂、作為聚醯亞胺前驅物之聚醯胺酸、丙烯酸樹脂、酚樹脂、液晶性聚酯樹脂、聚烯烴樹脂、改性聚苯醚樹脂、多官能氰酸酯樹脂、多官能馬來醯亞胺-氰酸酯樹脂、多官能性馬來醯亞胺樹脂、乙烯酯樹脂、脲樹脂、鄰苯二甲酸二烯丙酯樹脂、黑色素樹脂、胍胺樹脂、三聚氰胺-脲共縮合樹脂、苯乙烯樹脂、聚碳酸酯樹脂、聚芳酯樹脂、聚碸、聚芳碸、芳香族聚醯胺樹脂、芳香族聚醚醯胺、聚苯硫醚、聚烯丙醚酮、聚醯胺醯亞胺、聚苯醚、聚苯并唑、芳香族聚醯胺、聚乙烯。As the organic dielectric filler, a cured product containing a curable resin or a filler of a non-curable resin can be exemplified. Examples of curable resins or non-curable resins include epoxy resins, polyimide resins, polyimide resins, acrylic resins, phenol resins, liquid crystalline polyester resins, and polyimide precursors. Olefin resin, modified polyphenylene ether resin, polyfunctional cyanate resin, polyfunctional maleimide-cyanate resin, polyfunctional maleimide resin, vinyl ester resin, urea resin, phthalic acid Diallyl formate resin, melanin resin, guanamine resin, melamine-urea co-condensation resin, styrene resin, polycarbonate resin, polyarylate resin, polyarylene, polyarylene, aromatic polyamide resin, aromatic Group polyetheramide, polyphenylene sulfide, polyallyl ether ketone, polyamide imide, polyphenylene ether, polybenzoxazole, aromatic polyamide, polyethylene.

作為無機介電體,較佳為含有選自由鎂、矽、鈦、鋅、鈣、鍶、鋯、鋇、錫、釹、釤、鉍、鉛、鑭、鋰及鉭所組成之群中之至少1種金屬元素之金屬氧化物、及玻璃。 作為無機介電體之具體例,可例舉:鈦酸鋇、鋯酸鈦酸鉛、鈦酸鉛、氧化鋯、氧化鈦、鉭酸鉍鍶、鈮酸鉍鍶、鈦酸鉍。 又,作為介電體填料,可為利用有機介電體之被覆層被覆無機介電體填料而成之複合填料,亦可為有機介電體填料中分散有無機介電體之微粒子之複合填料。As the inorganic dielectric, it preferably contains at least one selected from the group consisting of magnesium, silicon, titanium, zinc, calcium, strontium, zirconium, barium, tin, neodymium, samarium, bismuth, lead, lanthanum, lithium and tantalum A metal oxide of a metal element, and glass. Specific examples of inorganic dielectrics include barium titanate, lead zirconate titanate, lead titanate, zirconium oxide, titanium oxide, strontium bismuth tantalate, strontium bismuth niobate, and bismuth titanate. In addition, as a dielectric filler, it can be a composite filler formed by covering an inorganic dielectric filler with a coating layer of an organic dielectric, or a composite filler in which fine particles of an inorganic dielectric are dispersed in an organic dielectric filler. .

又,介電體填料亦可為無機介電體之陶瓷(燒結體)。 作為介電常數為1.5~18之低介電常數陶瓷填料,可例舉:氧化鋁、碳酸鈣及矽酸鎂石之燒結體之粉末。 作為介電常數為100~200之高介電常數陶瓷填料,可例舉:金紅石型氧化鈦及鈦酸鈣之燒結體之粉末。 於使用陶瓷填料時,就抑制所獲得之藉由射出成形所獲得之基體之介電各向異性之觀點而言,較佳為將低介電常數陶瓷之粉末與高介電常數陶瓷之粉末併用。於該情形時,後者之粉末於陶瓷之粉末中所占之比率較佳為50體積%以下。進而,就所獲得之基體中之陶瓷填料之排列之觀點而言,較佳為前者之粉末之粒徑為1~7 μm,且後者之粉末之粒徑為0.1~2 μm,較佳為前者之粉末之粒徑大於後者之粉末之粒徑。In addition, the dielectric filler may be ceramic (sintered body) of an inorganic dielectric. As a low-dielectric constant ceramic filler with a dielectric constant of 1.5 to 18, examples include powders of sintered bodies of alumina, calcium carbonate, and magnesium silicate. As a high-dielectric constant ceramic filler with a dielectric constant of 100 to 200, examples include powders of sintered bodies of rutile-type titanium oxide and calcium titanate. When ceramic fillers are used, from the viewpoint of suppressing the dielectric anisotropy of the substrate obtained by injection molding, it is preferable to use the powder of low dielectric constant ceramics and the powder of high dielectric constant ceramics in combination. . In this case, the ratio of the latter powder to the ceramic powder is preferably 50% by volume or less. Furthermore, from the viewpoint of the arrangement of the ceramic filler in the obtained matrix, it is preferable that the particle size of the former powder is 1-7 μm, and the particle size of the latter powder is 0.1-2 μm, and the former is more preferable The particle size of the powder is larger than the particle size of the latter powder.

介電體填料之形狀可為粒狀,可為非粒狀(鱗片狀、層狀),亦可為纖維狀。 作為粒狀之介電體填料,可例舉球狀之無機氧化物填料,作為其具體例,可例舉:利用矽烷偶合劑進行過表面處理之平均粒徑1 μm以下之氧化矽填料(Admatechs公司製造之「Admafine」系列等)、利用二癸酸丙二醇酯等酯進行過表面處理之平均粒徑0.1 μm以下之氧化鋅(堺化學工業股份有限公司製造之「FINEX」系列等)、平均粒徑0.5 μm以下且最大粒徑未達1 μm之球狀熔融氧化矽(Denka公司製造之SFP等級等)、利用多元醇及無機物進行過被覆處理之平均粒徑0.5 μm以下之金紅石型氧化鈦(石原產業公司製造之「Tipaque」系列等)、利用烷基矽烷進行過表面處理之平均粒徑0.1 μm以下之金紅石型氧化鈦(Tayca公司製造之「JMT」系列等)。The shape of the dielectric filler can be granular, non-granular (scaly, layered), or fibrous. As the granular dielectric filler, a spherical inorganic oxide filler can be cited. As a specific example, it can be exemplified: a silica filler with an average particle diameter of 1 μm or less that has been surface-treated with a silane coupling agent (Admatechs "Admafine" series manufactured by the company), zinc oxide with an average particle size of 0.1 μm or less ("FINEX" series manufactured by Sakai Chemical Industry Co., Ltd.), average particle size treated with propylene glycol didecanoate and other esters Spherical fused silica with a diameter of 0.5 μm or less and a maximum particle size of less than 1 μm (SFP grade manufactured by Denka, etc.), rutile titanium oxide with an average particle diameter of 0.5 μm or less coated with polyols and inorganic substances ("Tipaque" series manufactured by Ishihara Sangyo Co., Ltd.), rutile-type titanium oxide with an average particle size of 0.1 μm or less that has been surface-treated with alkyl silane ("JMT" series manufactured by Tayca, etc.).

作為鱗片狀之介電體填料之具體例,可例舉鱗片狀之氮化硼填料。其粒徑較佳為30~100 μm,其縱橫比較佳為10~100。 於纖維狀填料為有機介電體之情形時,其纖維長度較佳為0.5~10 mm,其纖維直徑較佳為5~20 μm。 作為該纖維狀填料之具體例,可例舉:聚苯并唑纖維、對芳香族聚醯胺纖維、聚芳酯纖維、高分子量聚乙烯。 於纖維狀填料為玻璃纖維之情形時,其纖維長度較佳為10 μm~5 mm。又,其截面形狀可為真圓形、繭形、橢圓形、半圓形、多角形、星形中之任一者,較佳為真圓形。進而,縱橫比(纖維長度相對於纖維之與長度方向垂直之截面之直徑之比)較佳為10~600。As a specific example of the scaly dielectric filler, a scaly boron nitride filler can be cited. The particle size is preferably 30-100 μm, and the aspect ratio is preferably 10-100. When the fibrous filler is an organic dielectric, the fiber length is preferably 0.5-10 mm, and the fiber diameter is preferably 5-20 μm. Specific examples of the fibrous filler include polybenzoxazole fibers, para-aromatic polyamide fibers, polyarylate fibers, and high molecular weight polyethylene. When the fibrous filler is glass fiber, the fiber length is preferably 10 μm to 5 mm. In addition, the cross-sectional shape may be any of a true circle, a cocoon, an ellipse, a semicircle, a polygon, and a star, and it is preferably a true circle. Furthermore, the aspect ratio (the ratio of the fiber length to the diameter of the cross-section perpendicular to the length direction of the fiber) is preferably 10 to 600.

就介電體填料緻密且均勻地分散而獲得介電特性更優異之基體之觀點而言,較佳為使用具有微細結構之介電體填料作為介電體填料。 作為該具有微細結構之無機填料之較佳形態,可例舉平均粒徑2 μm以下之球狀填料、及長度30 μm以下且直徑2 μm以下之纖維狀填料。 前者之介電體填料之平均粒徑較佳為0.05~5 μm,更佳為0.1~3 μm。於該情形時,介電體填料易更均勻地分散於熔融狀態之射出成形材料及基體中。 於後者之介電體填料中,長度為纖維長度,直徑為纖維直徑。纖維長度較佳為1~30 μm,更佳為10~20 μm。纖維直徑較佳為0.1~1 μm,更佳為0.3~0.6 μm。From the viewpoint of densely and uniformly dispersing the dielectric filler to obtain a matrix with more excellent dielectric properties, it is preferable to use a dielectric filler having a fine structure as the dielectric filler. As a preferable form of the inorganic filler having a fine structure, a spherical filler having an average particle diameter of 2 μm or less, and a fibrous filler having a length of 30 μm or less and a diameter of 2 μm or less can be mentioned. The average particle diameter of the former dielectric filler is preferably 0.05-5 μm, more preferably 0.1-3 μm. In this case, the dielectric filler is likely to be more uniformly dispersed in the molten injection molding material and matrix. In the latter dielectric filler, the length is the fiber length and the diameter is the fiber diameter. The fiber length is preferably 1-30 μm, more preferably 10-20 μm. The fiber diameter is preferably 0.1 to 1 μm, more preferably 0.3 to 0.6 μm.

組合物中之介電體填料相對於F聚合物之以質量計之比較佳為1/10~1/1,更佳為1/8~1/2,進而較佳為1/6~1/3。於該情形時,基體之介電特性易進一步提昇。 F聚合物於組合物中所占之具體比率較佳為10~80質量%,更佳為25~75質量%,進而較佳為50~70質量%。 又,介電體填料於組合物中所占之具體比率較佳為20~90質量%,更佳為25~75質量%,進而較佳為30~50質量%。 又,本發明之組合物可於不損害本發明之效果之範圍內含有觸變性賦予劑、消泡劑、矽烷偶合劑、脫水劑、塑化劑、耐候劑、抗氧化劑、熱穩定劑、潤滑劑、抗靜電劑、增白劑、著色劑、導電劑、脫模劑、表面處理劑、黏度調節劑、阻燃劑。The ratio by mass of the dielectric filler in the composition to the F polymer is preferably 1/10 to 1/1, more preferably 1/8 to 1/2, and still more preferably 1/6 to 1 3. In this case, the dielectric properties of the substrate can be further improved. The specific ratio of the F polymer in the composition is preferably 10 to 80% by mass, more preferably 25 to 75% by mass, and still more preferably 50 to 70% by mass. In addition, the specific ratio of the dielectric filler in the composition is preferably 20 to 90% by mass, more preferably 25 to 75% by mass, and still more preferably 30 to 50% by mass. In addition, the composition of the present invention may contain a thixotropy imparting agent, a defoaming agent, a silane coupling agent, a dehydrating agent, a plasticizer, a weathering agent, an antioxidant, a heat stabilizer, and a lubricant within a range that does not impair the effects of the present invention. Agent, antistatic agent, brightener, coloring agent, conductive agent, release agent, surface treatment agent, viscosity regulator, flame retardant.

作為由本發明之組合物製造之基體之用途,可例舉:天線、連接器、插口、繼電器零件、繞線管、光學拾取器、振盪器、印刷配線板、電腦相關零件等電氣、電子零件、IC(Integrated Circuit,積體電路)托盤、晶圓搬運器等半導體製造製程相關零件、VTR(video tape recorder,磁帶錄影機)、電視、熨斗、空調、立體聲音響裝置、吸塵器、冰箱、電鍋、照明器具等家電製品用零件、反射燈、燈座等照明器具用零件、光碟、雷射磁碟(註冊商標)、揚聲器等音響製品用零件、光纜用套圈、電話機、傳真機、數據機等通信設備用零件、分離爪、加熱器支架等影印機相關零件、動葉輪、風扇齒輪、齒輪、軸承、馬達零件及殼體等機械零件、汽車用機構零件、引擎零件、發動機室內零件、電氣零件、內裝零件等汽車用零件、微波烹飪用鍋、耐熱餐具等烹飪用器具、地板材、壁材等隔熱、隔音用構件、樑、柱等支持構件、屋頂材等建築材料或土木建築用構件、航空器、航天器、航天器用零件、核反應爐等輻射設施構件、海洋設施構件、洗淨用治具、光學機器零件、閥門類、管道管類、噴嘴類、過濾器類、膜、醫用機器零件、感測器類零件、衛生備品等。As the use of the substrate made from the composition of the present invention, examples include: antennas, connectors, sockets, relay parts, bobbins, optical pickups, oscillators, printed wiring boards, computer-related parts and other electrical and electronic parts, Semiconductor manufacturing process related parts such as IC (Integrated Circuit) trays, wafer carriers, VTR (video tape recorder), TVs, irons, air conditioners, stereo audio devices, vacuum cleaners, refrigerators, electric cookers, Parts for home appliances such as lighting equipment, parts for lighting equipment such as reflectors, lamp holders, optical discs, laser disks (registered trademarks), parts for audio products such as speakers, ferrules for optical cables, telephones, fax machines, modems, etc. Communication equipment parts, separation claws, heater brackets and other photocopier-related parts, moving impellers, fan gears, gears, bearings, motor parts and housings and other mechanical parts, automotive mechanical parts, engine parts, engine room parts, and electrical parts , Interior parts and other automotive parts, microwave cooking pots, heat-resistant tableware and other cooking utensils, floor plates, wall materials and other heat and sound insulation members, beams, pillars and other supporting members, roofing materials and other construction materials, or civil engineering Components, aircraft, spacecraft, spacecraft parts, nuclear reactors and other radiation facility components, marine facility components, cleaning fixtures, optical machine parts, valves, pipes, nozzles, filters, membranes, medical Machine parts, sensor parts, sanitary spare parts, etc.

其中,作為本發明中之基體之用途,較佳為天線(尤其是小型天線)。作為該天線之具體例,可例舉:I:具備天線圖案、及介電常數為2以上且介電損耗正切為0.05以下之保持天線圖案之成形部的天線(前者之天線);及II:具備天線圖案、及介電常數為2以上且介電損耗正切為0.05以下之覆蓋天線圖案之整合層的天線(後者之天線)。Among them, the use of the substrate in the present invention is preferably an antenna (especially a small antenna). As a specific example of the antenna, one may cite: I: an antenna having an antenna pattern and a molded part holding the antenna pattern with a dielectric constant of 2 or more and a dielectric loss tangent of 0.05 or less (the former antenna); and II: An antenna with an antenna pattern and an integrated layer covering the antenna pattern with a dielectric constant of 2 or more and a dielectric loss tangent of 0.05 or less (the latter antenna).

前者之天線較佳為將本發明之組合物射出至具有與成形部對應之形狀之模具內而形成成形部來製造。 此時,天線可藉由分別製作出基體與天線圖案後加以組裝(嵌入)之外部成形而製造,亦可藉由在將天線圖案配置於成形模具內之狀態下將成形用材料射出至成形模具內之嵌入成形而製造,較佳為藉由後者之嵌入成形而製造。 藉由嵌入成形,可獲得天線圖案與基體高度接著之天線。該天線之性能優異,並且耐久性亦良好。 射出成形時之加熱溫度只要設定為F聚合物之熔點以上之溫度即可,具體而言,較佳為300~400℃,更佳為320~380℃。 又,天線可僅具有1個天線圖案,亦可具有2個以上天線圖案。 後者之天線較佳為藉由在將本發明之組合物供給至具有與整合層對應之形狀之模具內並進行壓縮而形成整合層後將整合層與天線圖案加以組裝(嵌入)之外部成形而製造。 如上所述,藉由射出成形或壓縮成形由本發明之組合物形成之成形品之介電特性優異,作為天線有用。The former antenna is preferably manufactured by injecting the composition of the present invention into a mold having a shape corresponding to the forming part to form the forming part. At this time, the antenna can be manufactured by forming the base body and the antenna pattern separately and then assembling (embedded) by external molding, or by injecting the forming material into the forming mold while the antenna pattern is placed in the forming mold. The inner insert molding is manufactured, preferably by the latter insert molding. By insert molding, an antenna with the antenna pattern and the height of the base can be obtained. The antenna has excellent performance and good durability. The heating temperature during injection molding may be set to a temperature higher than the melting point of the F polymer. Specifically, it is preferably 300 to 400°C, more preferably 320 to 380°C. In addition, the antenna may have only one antenna pattern, or may have two or more antenna patterns. The latter antenna is preferably formed by supplying the composition of the present invention into a mold having a shape corresponding to the integration layer and compressing it to form an integration layer, and then assemble (embed) the integration layer and the antenna pattern for external molding. manufacture. As described above, molded articles formed from the composition of the present invention by injection molding or compression molding have excellent dielectric properties and are useful as antennas.

可於藉由本發明所獲得之天線之表面(基體之與天線圖案為相反側之面(以下亦稱為「天線表面」))進而形成金屬層。金屬層可藉由氣相成膜法形成,亦可藉由金屬鍍覆法形成。 作為構成金屬層之金屬,可例舉:銅、銅合金、不鏽鋼、鎳、鎳合金(亦包括42合金)、鋁、鋁合金。 金屬層之厚度較佳為1~50 μm,更佳為10~25 μm。若為該厚度之金屬層,則易抑制天線整體之翹曲,並且易用於各種用途。 又,藉由前者之方法,易形成均一且與天線表面之密接性優異之金屬層。作為氣相成膜法,可例舉:濺鍍法、真空蒸鍍法、離子鍍覆法、雷射剝蝕法,較佳為濺鍍法。A metal layer can be formed on the surface of the antenna obtained by the present invention (the surface of the substrate on the opposite side to the antenna pattern (hereinafter also referred to as "antenna surface")). The metal layer can be formed by a vapor phase film formation method, or can be formed by a metal plating method. Examples of metals constituting the metal layer include copper, copper alloys, stainless steel, nickel, nickel alloys (including 42 alloys), aluminum, and aluminum alloys. The thickness of the metal layer is preferably 1-50 μm, more preferably 10-25 μm. If it is a metal layer of this thickness, it is easy to suppress the warpage of the antenna as a whole, and it is easy to be used for various purposes. In addition, by the former method, it is easy to form a uniform metal layer with excellent adhesion to the surface of the antenna. Examples of the vapor phase film formation method include a sputtering method, a vacuum vapor deposition method, an ion plating method, and a laser ablation method, and the sputtering method is preferred.

金屬層亦可藉由氣相成膜法形成聚合物層側之部分(第1部分),並藉由電鍍等形成剩餘部分(第2部分)。 尤其,金屬層較佳為藉由氣相成膜法(尤其是濺鍍法)形成第1部分,並藉由電解鍍覆法形成第2部分。 具體而言,金屬層較佳為藉由濺鍍法形成nm級之第1部分,並將該第1部分設為晶種層,藉由電解鍍覆法使其生長至μm級而形成。 再者,較佳為於第1部分中,金屬之晶體結構形成柱狀結構。The metal layer may be formed on the side of the polymer layer (the first part) by a vapor-phase film formation method, and the remaining part (the second part) may be formed by electroplating or the like. In particular, it is preferable that the metal layer form the first part by a vapor deposition method (especially a sputtering method) and form the second part by an electrolytic plating method. Specifically, the metal layer is preferably formed by forming the first part in the nm order by sputtering, using the first part as a seed layer, and growing it to the μm order by electroplating. Furthermore, it is preferable that in the first part, the crystal structure of the metal forms a columnar structure.

天線表面之十點表面粗糙度較佳為0.1 μm以上,更佳為1 μm以上。上述十點表面粗糙度較佳為20 μm以下。若天線表面為該表面粗糙度,則易使金屬層牢固地接著積層於天線表面。形成本發明中之天線表面之基體係藉由射出成形法或壓縮成形法由本發明之組合物形成,故易將其表面粗糙度控制為該所需之範圍內。 又,若本發明之組合物包含介電體填料、尤其是含有金屬氧化物之介電填料,則易使金屬層牢固地接著積層於天線表面。The ten-point surface roughness of the antenna surface is preferably 0.1 μm or more, more preferably 1 μm or more. The ten-point surface roughness is preferably 20 μm or less. If the surface of the antenna has this surface roughness, it is easy for the metal layer to be firmly laminated on the surface of the antenna. The base system forming the surface of the antenna of the present invention is formed from the composition of the present invention by injection molding or compression molding, so the surface roughness is easily controlled within the required range. In addition, if the composition of the present invention contains a dielectric filler, especially a dielectric filler containing a metal oxide, it is easy for the metal layer to be firmly laminated on the surface of the antenna.

天線表面形成有金屬層之天線可進而供於蝕刻處理而於上述金屬層上形成傳輸電路,亦可供於焊料處理進行加工。金屬層牢固地接著積層於天線表面,且耐熱性(回焊性)及耐化學品性優異,故於該等處理中,金屬層與天線不易剝離。 金屬層對天線表面之剝離強度較佳為3 N/cm以上,更佳為5 N/cm以上,進而較佳為10 N/cm以上。再者,剝離強度之上限通常為25 N/cm。 再者,剝離強度係指將形成有金屬層之天線表面切割成矩形狀(長100 mm、寬10 mm),並將距離長度方向之一端50 mm之位置固定,以拉伸速度50 mm/分鐘自長度方向之一端以相對於切片90°之角度使天線表面與金屬層剝離時所施加之最大荷重(N/cm)。The antenna with a metal layer formed on the surface of the antenna can be further subjected to an etching process to form a transmission circuit on the metal layer, and can also be processed in a soldering process. The metal layer is firmly laminated on the surface of the antenna, and has excellent heat resistance (reflow resistance) and chemical resistance. Therefore, in these treatments, the metal layer and the antenna are not easily peeled off. The peel strength of the metal layer to the surface of the antenna is preferably 3 N/cm or more, more preferably 5 N/cm or more, and still more preferably 10 N/cm or more. Furthermore, the upper limit of peel strength is usually 25 N/cm. Furthermore, peel strength refers to cutting the surface of the antenna on which the metal layer is formed into a rectangular shape (length 100 mm, width 10 mm), and fixing the position 50 mm away from one end of the length direction at a stretching speed of 50 mm/min. The maximum load (N/cm) applied when peeling the surface of the antenna from the metal layer at an angle of 90° relative to the slice from one end of the length direction.

以上,對本發明之組合物、天線之製造方法及成形品進行了說明,但本發明並不限定於上述實施方式之構成。 例如,本發明之組合物及成形品可於上述實施方式之構成中追加具有其他任意構成,亦可置換為發揮相同作用之任意構成。 又,本發明之天線之製造方法可於上述實施方式之構成中追加具有其他任意步驟,亦可置換為產生相同作用之任意步驟。 [實施例]As mentioned above, although the composition of this invention, the manufacturing method of an antenna, and the molded article were demonstrated, this invention is not limited to the structure of the said embodiment. For example, the composition and molded article of the present invention may have other arbitrary configurations in addition to the configurations of the above-mentioned embodiments, or may be replaced with arbitrary configurations that exert the same effect. In addition, the method of manufacturing the antenna of the present invention may have other arbitrary steps added to the configuration of the above-mentioned embodiment, or may be replaced with arbitrary steps that produce the same effect. [Example]

以下,藉由實施例詳細地說明本發明,但本發明並不限定於該等。 1.F聚合物 F聚合物1:依序以98.0 mol%、1.9 mol%、0.1 mol%包含TFE單元、PPVE單元及NAH單元,且具有極性官能基之聚合物(熔點:300℃、熔融黏度:1×103 Pa・s、MFR:8 g/10分鐘) 2.介電體填料 填料1:鈦酸鋇纖維(纖維長度:20 μm、纖維直徑1.5 μm) 填料2:玻璃纖維(橫截面形狀:圓形、纖維長度:3 mm、纖維直徑11 μm、日東紡織股份有限公司製造之「CS-3J-256」) 填料3:氮化硼填料(鱗片狀、粒徑:35 mm、縱橫比:30、Denka公司製造之「XGP」) 填料4:聚苯并唑纖維(纖維長度:1 mm、纖維直徑:12 μm、東洋紡公司製造之「Zylon」) 填料5:球狀氧化矽填料(利用胺基矽烷偶合劑所獲得之表面處理品、平均粒徑:0.5 μm、Admatechs公司製造之「Admafine SO-C2」)Hereinafter, the present invention will be explained in detail with examples, but the present invention is not limited to these. 1. F polymer F polymer 1: a polymer containing TFE units, PPVE units and NAH units in order of 98.0 mol%, 1.9 mol%, and 0.1 mol%, and has polar functional groups (melting point: 300°C, melt viscosity : 1×10 3 Pa·s, MFR: 8 g/10 minutes) 2. Dielectric filler Filler 1: Barium titanate fiber (fiber length: 20 μm, fiber diameter 1.5 μm) Filler 2: Glass fiber (cross section Shape: round, fiber length: 3 mm, fiber diameter 11 μm, "CS-3J-256" manufactured by Nitto Textile Co., Ltd.) Filler 3: Boron Nitride filler (scaly, particle size: 35 mm, aspect ratio : 30. "XGP" manufactured by Denka) Filler 4: Polybenzoxazole fiber (fiber length: 1 mm, fiber diameter: 12 μm, "Zylon" manufactured by Toyobo) Filler 5: spherical silica filler (using Surface treatment product obtained by aminosilane coupling agent, average particle size: 0.5 μm, "Admafine SO-C2" manufactured by Admatechs)

3.組合物 組合物1:使用料缸溫度設定為340℃之雙軸擠出機將66質量份之F聚合物1與34質量份之填料1進行熔融混練,使其通過頭孔而成形為絲狀,進而於水中冷卻後,切割成ϕ2×5 mm左右而獲得之顆粒 組合物2:將66質量份之F聚合物1之粉末(平均粒徑:20 μm)與34質量份之填料1進行乾摻而獲得之粉末 組合物3:使用70質量份之F聚合物1之粉末(平均粒徑:50 μm)、10質量份之填料2及20質量份之填料3,除此以外,以與組合物1相同之方式獲得之顆粒 組合物4:使用Laboplastomill裝置將90質量份之F聚合物1之粉末(平均粒徑:50 μm)與10質量份之填料4進行熔融混練而獲得之顆粒 組合物5:使用Laboplastomill裝置將60質量份之F聚合物1之粉末(平均粒徑:50 μm)與40質量份之填料5進行熔融混練而獲得之顆粒 組合物6:使用90質量份之F聚合物1之粉末(平均粒徑:50 μm)及10質量份之填料3,除此以外,以與組合物1相同之方式獲得之顆粒3. Composition Composition 1: Using a twin-screw extruder with a cylinder temperature set to 340°C, 66 parts by mass of F polymer 1 and 34 parts by mass of filler 1 were melt-kneaded and passed through a head hole to form filaments, and then After cooling in water, cut into ϕ2×5 mm to obtain pellets Composition 2: Powder obtained by dry blending 66 parts by mass of F polymer 1 powder (average particle size: 20 μm) and 34 parts by mass of filler 1 Composition 3: 70 parts by mass of F polymer 1 powder (average particle size: 50 μm), 10 parts by mass of filler 2 and 20 parts by mass of filler 3 were used, except for this, in the same manner as composition 1 Obtained particles Composition 4: Particles obtained by melt-kneading 90 parts by mass of F polymer 1 powder (average particle size: 50 μm) and 10 parts by mass of filler 4 using a Laboplastomill device Composition 5: particles obtained by melt-kneading 60 parts by mass of F polymer 1 powder (average particle size: 50 μm) and 40 parts by mass of filler 5 using a Laboplastomill device Composition 6: Using 90 parts by mass of F polymer 1 powder (average particle size: 50 μm) and 10 parts by mass of filler 3, except for the particles obtained in the same manner as composition 1

4.組合物之成形例 以下,基體之介電常數及介電損耗正切係使用網路分析儀作為測定器,藉由空腔共振器擾動法(測定頻率:20 GHz)進行測定。 4-1.射出成形例 將組合物3投入至射出成形機中,於320℃下熔融後,射出成形至金屬製成形模具之ϕ3 mm之側澆口中,獲得具有片材部之基體(介電基體)。該具有金屬層之基體之介電常數為3.0,介電損耗正切為0.0019。 使用組合物4代替組合物3,除此以外,以與上述相同之方式獲得基體。其介電常數為2.3,介電損耗正切為0.0016,線膨脹係數為79 ppm/℃。4. Forming examples of the composition Below, the dielectric constant and dielectric loss tangent of the substrate are measured by the cavity resonator perturbation method (measurement frequency: 20 GHz) using a network analyzer as the measuring instrument. 4-1. Injection molding example The composition 3 was put into an injection molding machine, melted at 320°C, and then injection molded into a ϕ3 mm side gate of a metal forming mold to obtain a substrate (dielectric substrate) with a sheet portion. The dielectric constant of the substrate with the metal layer is 3.0, and the dielectric loss tangent is 0.0019. Except for using composition 4 instead of composition 3, the matrix was obtained in the same manner as described above. The dielectric constant is 2.3, the dielectric loss tangent is 0.0016, and the linear expansion coefficient is 79 ppm/°C.

使用組合物5代替組合物3,除此以外,以與上述相同之方式獲得基體。其介電常數為2.6,介電損耗正切為0.0010,線膨脹係數為134 ppm/℃。 使用組合物6代替組合物3,除此以外,以與上述相同之方式獲得基體。其介電常數為2.3,介電損耗正切為0.0010,線膨脹係數為200 ppm/℃以下。Except for using composition 5 instead of composition 3, the matrix was obtained in the same manner as described above. The dielectric constant is 2.6, the dielectric loss tangent is 0.0010, and the linear expansion coefficient is 134 ppm/°C. Except for using composition 6 instead of composition 3, the matrix was obtained in the same manner as described above. The dielectric constant is 2.3, the dielectric loss tangent is 0.0010, and the linear expansion coefficient is less than 200 ppm/℃.

5.天線之製造例 5-1.利用射出成形之天線之製造例 將組合物1投入至射出成形機中,於320℃下熔融後,射出成形至嵌入有銅箔製天線圖案之金屬製成形模具之ϕ3 mm之側澆口中,獲得具備天線圖案、及保持該天線圖案之基體(介電基體)之天線。 基體之介電常數為4.0,介電損耗正切為0.03。又,於天線中,天線圖案與基體之界面之密接性較高,牢固地接著。5. Antenna manufacturing example 5-1. Manufacturing example of antenna by injection molding The composition 1 was put into an injection molding machine, melted at 320°C, and then injection molded into a ϕ3 mm side gate of a metal forming mold embedded with an antenna pattern made of copper foil to obtain an antenna pattern and hold the antenna The pattern base (dielectric base) antenna. The dielectric constant of the substrate is 4.0, and the dielectric loss tangent is 0.03. In addition, in the antenna, the interface between the antenna pattern and the substrate has high adhesion, and it is firmly bonded.

5-2.利用壓縮成形之天線之製造例 將組合物2投入至壓縮成形機中,於溫度380℃、壓縮壓力17 MPa之條件下進行壓縮成形而形成具有覆蓋天線圖案之形狀之整合層(厚0.03 cm之錠劑狀、介電常數:4.0、介電損耗正切:0.03)。將該整合層嵌入至天線圖案中而獲得具備整合層之天線。 5-3.金屬層之形成例 使用真空濺鍍裝置於上述「5-1」中獲得之天線中之基體之表面(與天線圖案為相反側之面)依序形成鎳鉻合金層(厚度:20 nm、鎳含量80%、鉻含量20%)及銅層(厚度:100 nm)。進而,藉由硫酸銅鍍覆於晶種銅層上形成銅層(厚度:16 μm)而於天線之表面形成金屬層。該金屬層牢固地接著於天線表面,且於其上形成傳輸電路時之耐熱性(回焊性)優異。 [產業上之可利用性]5-2. Manufacturing example of antenna using compression molding Put the composition 2 into a compression molding machine, and perform compression molding under the conditions of a temperature of 380°C and a compression pressure of 17 MPa to form an integrated layer with a shape covering the antenna pattern (a lozenge shape with a thickness of 0.03 cm, dielectric constant: 4.0. Dielectric loss tangent: 0.03). The integration layer is embedded in the antenna pattern to obtain an antenna with the integration layer. 5-3. Examples of metal layer formation Use a vacuum sputtering device to form a nickel-chromium alloy layer (thickness: 20 nm, nickel content 80%, chromium Content 20%) and copper layer (thickness: 100 nm). Furthermore, a copper layer (thickness: 16 μm) was formed on the seed copper layer by copper sulfate plating to form a metal layer on the surface of the antenna. The metal layer is firmly adhered to the surface of the antenna, and has excellent heat resistance (reflow resistance) when a transmission circuit is formed thereon. [Industrial availability]

本發明之組合物之射出成形性或壓縮成形性優異,可良好地用於以電氣、電子零件為代表之各種零件(構件)、尤其是天線之基體之製造。 再者,本說明書中引用2019年8月29日提出申請之日本專利申請2019-157041號及2019年10月11日提出申請之日本專利申請2019-187947號之說明書、申請專利範圍及摘要之全部內容,以本發明之說明書之揭示內容之形式併入。The composition of the present invention is excellent in injection moldability or compression moldability, and can be well used for the manufacture of various parts (components) represented by electrical and electronic parts, especially antenna substrates. In addition, all of the specification, scope and abstract of Japanese Patent Application No. 2019-157041 filed on August 29, 2019 and Japanese Patent Application No. 2019-187947 filed on October 11, 2019 are cited in this specification. The content is incorporated in the form of the disclosure content of the specification of the present invention.

Claims (15)

一種組合物,其含有包含基於四氟乙烯之單元之熱熔融性聚合物,且用於藉由射出成形或壓縮成形而形成介電損耗正切為0.05以下之基體。A composition containing a hot-melt polymer containing tetrafluoroethylene-based units and used for forming a matrix with a dielectric loss tangent of 0.05 or less by injection molding or compression molding. 如請求項1之組合物,其中上述基體為天線之成形部或整合層。The composition of claim 1, wherein the above-mentioned substrate is a formed part or an integrated layer of an antenna. 如請求項1或2之組合物,其中上述基體為天線之成形部或整合層,且上述成形部或上述整合層之厚度為1 cm以下。The composition of claim 1 or 2, wherein the substrate is a molded part or an integrated layer of an antenna, and the thickness of the molded part or the integrated layer is 1 cm or less. 如請求項1至3中任一項之組合物,其進而含有介電常數為1.5以上之介電體填料,且上述基體之介電常數超過1.5。The composition according to any one of claims 1 to 3, which further contains a dielectric filler having a dielectric constant of 1.5 or more, and the dielectric constant of the above-mentioned matrix exceeds 1.5. 如請求項4之組合物,其中上述介電體填料為平均粒徑2 μm以下之球狀填料、或長度30 μm以下且直徑2 μm以下之纖維狀填料。The composition of claim 4, wherein the above-mentioned dielectric filler is a spherical filler having an average particle diameter of 2 μm or less, or a fibrous filler having a length of 30 μm or less and a diameter of 2 μm or less. 如請求項4或5之組合物,其中上述介電體填料於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1/10~1/1。The composition of claim 4 or 5, wherein the ratio by mass of the ratio of the above-mentioned dielectric filler in the above-mentioned composition to the ratio of the above-mentioned hot-melt polymer in the above-mentioned composition is 1 /10~1/1. 如請求項1至6中任一項之組合物,其中上述熱熔融性聚合物含有基於全氟(烷基乙烯基醚)、六氟丙烯或氟烷基乙烯之單元。The composition according to any one of claims 1 to 6, wherein the hot melt polymer contains units based on perfluoro(alkyl vinyl ether), hexafluoropropylene or fluoroalkyl ethylene. 如請求項1至7中任一項之組合物,其進而含有聚四氟乙烯。The composition according to any one of claims 1 to 7, which further contains polytetrafluoroethylene. 如請求項1至8中任一項之組合物,其進而含有聚四氟乙烯,上述聚四氟乙烯於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1以下,且該組合物用於藉由射出成形而形成上述基體。The composition according to any one of claims 1 to 8, which further contains polytetrafluoroethylene, and the ratio of the polytetrafluoroethylene in the composition is relative to the ratio of the hot melt polymer in the composition The ratio of the ratio by mass is 1 or less, and the composition is used to form the above-mentioned matrix by injection molding. 如請求項1至9中任一項之組合物,其進而含有聚四氟乙烯,上述聚四氟乙烯於上述組合物中所占之比率相對於上述熱熔融性聚合物於上述組合物中所占之比率之以質量計之比為1以上,且該組合物用於藉由壓縮成形而形成上述基體。The composition according to any one of claims 1 to 9, which further contains polytetrafluoroethylene, and the ratio of the polytetrafluoroethylene in the composition relative to the ratio of the hot melt polymer in the composition The ratio of the ratio by mass is 1 or more, and the composition is used to form the above-mentioned matrix by compression molding. 一種天線之製造方法,其係製造具備天線圖案、及介電損耗正切為0.05以下且保持上述天線圖案之成形部之天線之方法,且其係設為於將如請求項1至9中任一項之組合物射出至具有與上述成形部對應之形狀之模具內而形成上述成形部時,上述成形模具內已配置上述天線圖案之狀態,或者於形成上述成形部後將上述成形部與上述天線圖案加以組裝。An antenna manufacturing method, which is a method of manufacturing an antenna having an antenna pattern and a dielectric loss tangent of 0.05 or less and maintaining the above-mentioned antenna pattern forming part, and it is set to any one of claims 1 to 9 When the composition of the item is injected into a mold having a shape corresponding to the molded part to form the molded part, the antenna pattern is already arranged in the molded mold, or the molded part and the antenna are formed after the molded part is formed. Pattern to be assembled. 一種天線之製造方法,其係製造具備天線圖案、及介電損耗正切為0.05以下且覆蓋上述天線圖案之整合層之天線之方法,且其係於將如請求項1至8及10中任一項之組合物供給至具有與上述整合層對應之形狀之模具內並進行壓縮而形成整合層後,將上述整合層與上述天線圖案加以組裝。An antenna manufacturing method, which is a method of manufacturing an antenna having an antenna pattern and a dielectric loss tangent of 0.05 or less and covering an integrated layer of the antenna pattern, and it is based on any one of claims 1 to 8 and 10 After the composition of the item is supplied into a mold having a shape corresponding to the integration layer and compressed to form an integration layer, the integration layer and the antenna pattern are assembled. 如請求項12之製造方法,其於上述整合層之與上述天線圖案為相反側之面進而形成金屬層。According to the manufacturing method of claim 12, a metal layer is further formed on the surface of the integration layer opposite to the antenna pattern. 一種成形品,其係藉由射出成形或壓縮成形由如請求項1至10中任一項之組合物形成。A molded product formed from the composition according to any one of claims 1 to 10 by injection molding or compression molding. 如請求項14之成形品,其中上述成形品為天線。The molded product of claim 14, wherein the molded product is an antenna.
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