TW202119644A - Thermoelectric power generating device and manufacturing method thereof - Google Patents

Abstract

A thermoelectric power generating device includes a first aluminum alloy plate, a second aluminum alloy plate, an endothermic layer, a thermal radiating layer, a first logic metallic wiring layer, a second logic metallic wiring layer, a plurality of p-type semiconductors, and a plurality of n-type semiconductors. The endothermic layer is formed on the first aluminum alloy plate, and the thermal radiating layer is formed on the second aluminum alloy plate. The first logic metallic wiring layer is formed on the endothermic layer, and the second logic metallic wiring layer is formed on the thermal radiating layer. The p-type semiconductors and the n-type semiconductors are alternately arranged and fixed between the first logic metallic wiring layer and the second logic metallic wiring layer. A thermal conductivity of the thermal radiating layer is greater than a thermal conductivity of the endothermic layer to improve the power generation efficiency. In addition, a thermoelectric power generating device manufacturing method is also disclosed herein.

Description

Thermoelectric thermoelectric power generation device and manufacturing method thereof

The invention relates to a thermoelectric power generation device and a manufacturing method thereof, and particularly relates to a thermoelectric thermoelectric power generation device and a manufacturing method thereof.

Today's society is the age of the Internet. The invention of computers, televisions, and home appliances has promoted modern civilization and increased people's demand for electricity. Electricity has gradually become a necessity in people's lives. The main ways of generating electricity are: thermal power generation, solar power generation, wind power generation, nuclear power generation, hydropower generation, etc. Among them, a thermoelectric conversion device (thermoelectric conversion device) is a device with the characteristics of heat and electricity conversion between two kinds of energy. Because of its thermoelectric conversion characteristics, it has two application fields: refrigeration/heating and power generation. If the thermoelectric thermoelectric power generation device is energized so that the two ends of the element produce heat absorption and heat release (called Peltier Effect), it can be applied to the technical field of cooling or heating. If the two ends of the thermoelectric thermoelectric power generation device are at different temperatures, the thermoelectric thermoelectric power generation device can output direct current (referred to as Seebeck Effect), so it can be applied to the field of power generation technology.

However, the electricity generated by various energy conversion equipment currently only uses part of the original energy to be converted into electrical energy, and most of the rest escapes into the atmosphere again in the form of waste heat or waste energy. Such a large amount of energy is consumed in an ineffective cycle and aggravates the greenhouse effect, among which factory heat should be the largest source of waste heat energy. If the conversion efficiency can be improved, and the thermoelectric conversion efficiency of the thermoelectric thermoelectric power generation device can be increased, it will help to recover a large amount of waste heat and reduce the consumption of natural energy and the burden on the environment.

One objective of the present invention is to provide a thermoelectric thermoelectric power generation device to improve the thermoelectric conversion efficiency.

In order to achieve the above object, the present invention is a thermoelectric thermoelectric power generation device, which has a first aluminum alloy plate, a second aluminum alloy plate, a heat absorption layer, a heat dissipation layer, a first metal logic circuit layer, and a second aluminum alloy plate. A metal logic circuit layer and a plurality of P-type semiconductors and a plurality of N-type semiconductors arranged alternately. The heat absorption layer is formed on the first aluminum alloy plate, and the heat dissipation layer is formed on the second aluminum alloy plate. The first metal logic circuit layer is formed on the heat absorption layer, and the second metal logic circuit layer is formed on the heat dissipation layer. A plurality of P-type semiconductors and a plurality of N-type semiconductors arranged alternately are fixed between the first metal logic circuit layer and the second metal logic circuit layer, wherein the thermal conductivity coefficient of the heat dissipation layer is greater than the thermal conductivity coefficient of the heat absorption layer.

According to another embodiment of the present invention, a method for manufacturing a thermoelectric thermoelectric power generation device includes providing a first aluminum alloy plate and a second aluminum alloy plate, forming a heat absorption layer on the first aluminum alloy plate, and forming a heat absorption layer on the second aluminum alloy plate. Aluminum alloy plate A heat dissipation layer is formed on the heat absorption layer, a first metal logic circuit layer is formed on the heat absorption layer, and a second metal logic circuit layer is formed on the thermal layer, and a plurality of P-type semiconductors and a plurality of N-type semiconductors are alternately arranged, And fixed between the first metal logic circuit layer and the second metal logic circuit layer.

In some embodiments, the heat absorption layer is an aluminum oxide heat absorption layer, and the heat dissipation layer is an aluminum nitride heat dissipation layer or a graphene heat dissipation layer.

In some embodiments, the thermal conductivity of the heat absorption layer is about 1 to 1200 W/mK, and the thermal conductivity of the heat dissipation layer is about 2 to 5300 W/mK.

In some embodiments, the first metal logic circuit layer includes a plurality of first metal conductors. The second metal logic circuit layer includes a plurality of second metal conductors and the first metal conductors of the first metal logic circuit layer alternately arranged to connect the P-type semiconductor and the N-type semiconductor in series, and a cathode pad is connected to one of the P-type semiconductors. One, and an anode pad is connected to one of the N-type semiconductors.

In some embodiments, the material of the first aluminum alloy plate and the second aluminum alloy plate is aluminum carbon copper alloy, aluminum manganese alloy, aluminum magnesium alloy, aluminum magnesium silicon alloy, aluminum copper alloy or aluminum zinc alloy, and the first metal The logic circuit layer and the second metal logic circuit layer are copper-nickel-gold eutectic circuit, copper-nickel-tin eutectic circuit, copper-silver-tin eutectic circuit, nickel-gold eutectic circuit, nickel-silver eutectic circuit, silver glue circuit, carbon It is formed by glue circuit, copper glue circuit, graphene circuit or copper circuit.

In summary, the thermoelectric thermoelectric power generation device can provide better thermoelectric conversion efficiency by using the thermal conductivity coefficient of the heat dissipation layer to be greater than that of the heat absorption layer, which not only improves the capacity of waste heat power generation, but also reduces natural Consumption of resources, reduce pollution of the global environment, and improve A clean power source for human needs.

100‧‧‧Thermoelectric thermoelectric power generation device

110‧‧‧The first aluminum alloy plate

120‧‧‧Second Aluminum Alloy Plate

130‧‧‧Heat absorption layer

140‧‧‧Heat Dissipation Layer

150‧‧‧The first metal logic circuit layer

156‧‧‧The first metal conductor

160‧‧‧Second metal logic circuit layer

162‧‧‧Anode pad

164‧‧‧Cathode pad

166‧‧‧Second Metal Conductor

170‧‧‧P type semiconductor

180‧‧‧N-type semiconductor

200‧‧‧Thermoelectric thermoelectric power generation device manufacturing method

210~240‧‧‧Step

In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more obvious and understandable, the description of the accompanying drawings is as follows:

FIG. 1 is a schematic cross-sectional view of a thermoelectric thermoelectric power generation device according to an embodiment of the present invention.

FIG. 2 is a schematic flow chart of a manufacturing method of a thermoelectric thermoelectric power generation device according to another embodiment of the present invention.

The following is a detailed description of the embodiments with the accompanying drawings, but the provided embodiments are not used to limit the scope of the disclosure, and the description of the structure operation is not used to limit the order of its execution, any recombination of components The structure and the devices with equal effects are all within the scope of this disclosure. In addition, the drawings are for illustrative purposes only, and are not drawn in accordance with the original dimensions. To facilitate understanding, the same elements or similar elements in the following description will be described with the same symbols.

In addition, the terms (terms) used in the entire specification and the scope of the patent application, unless otherwise specified, usually have the usual meaning of each term used in this field, in the content disclosed here, and in the special content . Some terms used to describe the present disclosure will be discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance on the description of the present disclosure.

In the implementation mode and the scope of the patent application, unless the article is specifically limited in the context, "一" and "the" can generally refer to a single or plural. The numbers used in the steps are only used to mark the steps for ease of description, and are not used to limit the sequence and implementation.

Secondly, the terms "include", "include", "have", "contain", etc. used in this article are all open terms, meaning including but not limited to.

Referring to Figures 1 and 2, Figure 1 is a schematic cross-sectional view of a thermoelectric thermoelectric power generation device, and Figure 2 is a schematic diagram of a manufacturing method of the thermoelectric thermoelectric power generation device.

As shown in Figure 1, the thermoelectric thermoelectric power generation device 100 includes a first aluminum alloy plate 110 and a second aluminum alloy plate 120, a heat absorption layer 130 and a heat dissipation layer 140, a first metal logic circuit layer 150, and a second aluminum alloy plate. Two metal logic circuit layer 160. The P-type semiconductor 170 and the N-type semiconductor 180 can be fixed between the first metal logic circuit layer 150 and the second metal logic circuit layer 160 by soldering, but the present invention is not limited thereto.

The two ends of the thermoelectric thermoelectric power generation device 100 in Fig. 1 are at different temperatures. The first aluminum alloy plate 110 is the heat sink and the second aluminum alloy plate 120 is the heat sink. The temperature difference between the heat sink and the heat sink can be used to output direct current. Therefore, the thermoelectric thermoelectric power generation device 100 can be used in the field of power generation technology, and is suitable for use in a waste heat energy recovery system below 100°C.

In some embodiments, the heat absorption layer 130 is formed of an insulating material, for example, a thermally conductive but non-conductive material, such as aluminum oxide.

In some embodiments, the heat dissipation layer 140 is formed of an insulating material, for example, a thermally conductive but non-conductive material, such as aluminum nitride or a graphene heat dissipation layer.

In some embodiments, the heat absorption layer 130 has a lower thermal conductivity than the heat dissipation layer 140, for example, about 1 to 1200 W/mK. The heat dissipation layer 140 has a relatively high thermal conductivity, for example, about 2-5300 W/mK.

Thermal Resistance (Thermal Resistance) refers to the evaluation standard used to determine the heat dissipation capability of electronic components in the field of heat dissipation of electronic packaging. It represents the ability of preventing heat flow through the object when heat passes through the object, causing the object to produce a temperature difference, so different materials and structures will affect the change of thermal resistance.

Therefore, the thermal resistance value can judge and predict the heating condition of the electronic component. When the thermal resistance value is larger, it means that the heat is not easily transferred. The higher the temperature generated by the component, the poorer the heat dissipation ability; on the contrary, the smaller the thermal resistance value, The better the heat dissipation capacity.

Thermal resistance formula

Rth=△T/Q formula (1)

Among them, Rth: thermal resistance (K/W)

Q: Heat transfer rate (W)

△T: temperature difference (K)

Substituting the heat conduction formula Q=kA(△T/△n), where △n is the spatial variable (distance L), and substituting it into the thermal resistance formula, the thermal resistance of one-dimensional heat conduction can be obtained,

Rth=L/k * A formula (2)

Among them, Rth: thermal resistance (K/W)

L: Forward distance (m)

k: Thermal conductivity (W/m-K)

A: The penetration area of heat conduction (m ² )

Therefore, when transferring heat work with the same thickness, in other words, in the case of equal distance, changing the opposite sides, that is, the heat absorption layer 130 and the heat dissipation layer 140, and the use of materials with unequal thermal conductivity will cause the opposite sides to produce The temperature difference, so under the SEEBACK effect, the PN semiconductor will have the phenomenon of electron migration, and then generate the required current and voltage.

In some embodiments, the heat dissipation coefficient of the heat dissipation layer 140 is greater than the heat dissipation coefficient of the heat absorption layer 130.

In some embodiments, the second metal logic circuit layer 160 on the heat absorption layer 130 further forms a cathode pad 164 connected to at least one of the P-type semiconductors 170 and an anode pad 162 connected to the N-type At least one of the semiconductors 180 is used to provide power required by external electronic devices. Among them, the anode pad 162 and the cathode pad 164 are generally formed on the outer side of the second metal logic circuit layer 160, that is, on the outer side of the second metal conductor 166 of the second metal logic circuit layer 160.

Referring to Figures 1 and 2 at the same time, a method 200 for manufacturing a thermoelectric thermoelectric power generation device. When the thermoelectric thermoelectric power generation device 100 is manufactured, first, in step 210, a first aluminum alloy plate 110 and a second aluminum alloy plate 120 are provided . The first aluminum alloy plate 110 and the second aluminum alloy plate 120 can be aluminum carbon-silicon alloy, aluminum-magnesium alloy, aluminum-magnesium-silicon alloy, aluminum-copper alloy or aluminum-zinc alloy, and their thermal conductivity is about 180-260W/mK, so Has higher heat transfer than general ceramics ability.

Next, in step 220, a heat absorption layer 130 is formed on the first aluminum alloy plate 110, and a heat dissipation layer 140 is formed on the second aluminum alloy plate 120. The heat absorption layer 130 and the heat dissipation layer 140 may be thermally conductive but non-conductive insulating layers. , Wherein the thermal conductivity coefficient of the heat dissipation layer 140 is greater than the thermal conductivity coefficient of the heat absorption layer 130.

Then, in step 230, a first metal logic circuit layer 150 is formed on the heat absorption layer 130, and a second metal logic circuit layer 160 is formed on the heat dissipation layer 140. The first metal logic circuit layer 150 includes a plurality of first metal conductors 156 arranged at intervals, and the second metal logic circuit layer 160 includes a plurality of second metal conductors 166 arranged at intervals. The first metal conductor 156 and the second metal The conductors 166 are arranged in a staggered manner to connect the P-type semiconductor 170 and the N-type semiconductor 180 in series.

In some embodiments, the first metal logic circuit layer 150 and the second metal logic circuit layer 160 are copper-nickel-gold eutectic circuits, copper-nickel-tin eutectic circuits, copper-silver-tin eutectic circuits, nickel-gold eutectic circuits, nickel It is formed by silver eutectic circuit, silver glue circuit, carbon glue circuit, copper glue circuit, graphene circuit or copper circuit.

Step 240, providing a plurality of P-type semiconductors 170 and a plurality of N-type semiconductors 180 arranged alternately, connected in series and fixed between the first metal logic circuit layer 150 and the second metal logic circuit layer 160, which can be soldered or other conductive materials The materials are fixed without departing from the spirit and scope of the present invention.

In summary, with the heat transfer coefficient of the heat dissipation layer being greater than the heat transfer coefficient of the heat absorption layer, the thermoelectric thermoelectric power generation device can provide better thermoelectric conversion efficiency, not only can improve the capacity of waste heat power generation, but also reduce the consumption of natural resources and slow down the earth The pollution of the environment provides clean power needed by mankind.

Although this disclosure has been disclosed in the above implementation manner, it is not intended to limit this disclosure. Anyone with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of this disclosure. Therefore, this disclosure The scope of protection shall be subject to the scope of the attached patent application.

100‧‧‧Thermoelectric thermoelectric power generation device

110‧‧‧The first aluminum alloy plate

120‧‧‧Second Aluminum Alloy Plate

130‧‧‧Heat absorption layer

140‧‧‧Heat Dissipation Layer

150‧‧‧The first metal logic circuit layer

156‧‧‧The first metal conductor

160‧‧‧Second metal logic circuit layer

162‧‧‧Anode pad

164‧‧‧Cathode pad

166‧‧‧Second Metal Conductor

170‧‧‧P type semiconductor

180‧‧‧N-type semiconductor

Claims (10)

A thermoelectric thermoelectric power generation device, including: A first aluminum alloy plate; A second aluminum alloy plate; A heat absorption layer formed on the first aluminum alloy plate; A heat dissipation layer formed on the second aluminum alloy plate; A first metal logic circuit layer formed on the heat absorption layer; A second metal logic circuit layer formed on the heat dissipation layer; and A plurality of P-type semiconductors and a plurality of N-type semiconductors arranged alternately are fixed between the first metal logic circuit layer and the second metal logic circuit layer, wherein the thermal conductivity of the heat dissipation layer is greater than the thermal conductivity of the heat absorption layer . Such as the thermoelectric thermoelectric power generation device of claim 1, wherein the heat absorption layer is an aluminum oxide heat absorption layer, and the heat dissipation layer is an aluminum nitride heat dissipation layer or a graphene heat dissipation layer. Such as the thermoelectric thermoelectric power generation device of claim 1, wherein the thermal conductivity of the heat absorption layer is about 1 to 1200 W/mK, and the thermal conductivity of the heat dissipation layer is about 2 to 5300 W/mK. The thermoelectric thermoelectric power generation device of claim 1, wherein the first metal logic circuit layer includes a plurality of first metal conductors; and The second metal logic circuit layer includes: A plurality of second metal conductors are alternately arranged with the first metal conductors of the first metal logic circuit layer to connect the P-type semiconductors and the N-type semiconductors in series, A cathode pad connected to one of the P-type semiconductors, and An anode pad is connected to one of the N-type semiconductors. Such as the thermoelectric thermoelectric power generation device of claim 1, wherein the material of the first aluminum alloy plate and the second aluminum alloy plate is aluminum-carbon-copper alloy, aluminum-manganese alloy, aluminum-magnesium alloy, aluminum-magnesium-silicon alloy, aluminum-copper alloy or aluminum Zinc alloy, and the first metal logic circuit layer and the second metal logic circuit layer are copper-nickel-gold eutectic circuit, copper-nickel-tin eutectic circuit, copper-silver-tin eutectic circuit, nickel-gold eutectic circuit, nickel-silver eutectic circuit It is formed by crystal circuit, silver glue circuit, carbon glue circuit, copper glue circuit, graphene circuit or copper circuit. A method for manufacturing a thermoelectric thermoelectric power generation device, including: Provide a first aluminum alloy plate and a second aluminum alloy plate; Forming a heat absorption layer on the first aluminum alloy plate, and forming a heat dissipation layer on the second aluminum alloy plate; Forming a first metal logic circuit layer on the heat absorption layer, and forming a second metal logic circuit layer on the heat dissipation layer; and A plurality of P-type semiconductors and a plurality of N-type semiconductors are alternately arranged and fixed between the first metal logic circuit layer and the second metal logic circuit layer. Such as the manufacturing method of the thermoelectric thermoelectric power generation device of claim 6, The heat absorption layer is an aluminum oxide heat absorption layer, and the heat dissipation layer is an aluminum nitride heat dissipation layer or a graphene heat dissipation layer. For example, the method for manufacturing a thermoelectric thermoelectric power generation device of claim 6, wherein the thermal conductivity of the heat absorption layer is about 1 to 1200 W/mK, and the thermal conductivity of the heat dissipation layer is about 2 to 5300 W/mK. The method for manufacturing a thermoelectric thermoelectric power generation device according to claim 6, wherein the first metal logic circuit layer includes a plurality of first metal conductors; and The second metal logic circuit layer includes: A plurality of second metal conductors are alternately arranged with the first metal conductors of the first metal logic circuit layer to connect the P-type semiconductors and the N-type semiconductors in series, A cathode pad connected to one of the P-type semiconductors, and An anode pad is connected to one of the N-type semiconductors. For example, the method for manufacturing a thermoelectric thermoelectric power generation device of claim 6, wherein the materials of the first aluminum alloy plate and the second aluminum alloy plate are aluminum-carbon-copper alloy, aluminum-manganese alloy, aluminum-magnesium alloy, aluminum-magnesium-silicon alloy, and aluminum-copper alloy Or aluminum-zinc alloy, and the first metal logic circuit layer and the second metal logic circuit layer are copper-nickel-gold eutectic circuit, copper-nickel-tin eutectic circuit, copper-silver-tin eutectic circuit, nickel-gold eutectic circuit, nickel It is formed by silver eutectic circuit, silver glue circuit, carbon glue circuit, copper glue circuit, graphene circuit or copper circuit.

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