TW202118840A - Cmp slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same - Google Patents
Cmp slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same Download PDFInfo
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- TW202118840A TW202118840A TW109137844A TW109137844A TW202118840A TW 202118840 A TW202118840 A TW 202118840A TW 109137844 A TW109137844 A TW 109137844A TW 109137844 A TW109137844 A TW 109137844A TW 202118840 A TW202118840 A TW 202118840A
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- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- CMLOVBIZVAKNJA-UHFFFAOYSA-N cyclobutane-1,1,2-tricarboxylic acid Chemical compound OC(=O)C1CCC1(C(O)=O)C(O)=O CMLOVBIZVAKNJA-UHFFFAOYSA-N 0.000 description 1
- CCQPAEQGAVNNIA-UHFFFAOYSA-N cyclobutane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCC1 CCQPAEQGAVNNIA-UHFFFAOYSA-N 0.000 description 1
- STZIXLPVKZUAMV-UHFFFAOYSA-N cyclopentane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1(C(O)=O)C(O)=O STZIXLPVKZUAMV-UHFFFAOYSA-N 0.000 description 1
- CQBJLRWOCFHFAB-UHFFFAOYSA-N cyclopentane-1,1,2-tricarboxylic acid Chemical compound OC(=O)C1CCCC1(C(O)=O)C(O)=O CQBJLRWOCFHFAB-UHFFFAOYSA-N 0.000 description 1
- YZFOGXKZTWZVFN-UHFFFAOYSA-N cyclopentane-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC1 YZFOGXKZTWZVFN-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229960004642 ferric ammonium citrate Drugs 0.000 description 1
- 229960002413 ferric citrate Drugs 0.000 description 1
- 239000011790 ferrous sulphate Substances 0.000 description 1
- 235000003891 ferrous sulphate Nutrition 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 125000000262 haloalkenyl group Chemical group 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 125000000232 haloalkynyl group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000004313 iron ammonium citrate Substances 0.000 description 1
- 235000000011 iron ammonium citrate Nutrition 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- QZRHHEURPZONJU-UHFFFAOYSA-N iron(2+) dinitrate nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QZRHHEURPZONJU-UHFFFAOYSA-N 0.000 description 1
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 description 1
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- KHPXUQMNIQBQEV-UHFFFAOYSA-N oxaloacetic acid Chemical compound OC(=O)CC(=O)C(O)=O KHPXUQMNIQBQEV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UFOIOXZLTXNHQH-UHFFFAOYSA-N oxolane-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1OC(C(O)=O)C(C(O)=O)C1C(O)=O UFOIOXZLTXNHQH-UHFFFAOYSA-N 0.000 description 1
- YULHQOUNQSJZHT-UHFFFAOYSA-N oxolane-2,3-dicarboxylic acid Chemical compound OC(=O)C1CCOC1C(O)=O YULHQOUNQSJZHT-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical group [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- SNOOUWRIMMFWNE-UHFFFAOYSA-M sodium;6-[(3,4,5-trimethoxybenzoyl)amino]hexanoate Chemical compound [Na+].COC1=CC(C(=O)NCCCCCC([O-])=O)=CC(OC)=C1OC SNOOUWRIMMFWNE-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- AUALKMYBYGCYNY-UHFFFAOYSA-E triazanium;2-hydroxypropane-1,2,3-tricarboxylate;iron(3+) Chemical compound [NH4+].[NH4+].[NH4+].[Fe+3].[Fe+3].[Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O AUALKMYBYGCYNY-UHFFFAOYSA-E 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 235000014393 valine Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本發明是有關於一種研磨鎢圖案晶圓之化學機械研磨漿料組成物以及一種使用其研磨鎢圖案晶圓之方法。更具體而言，本發明是有關於一種可藉由在研磨鎢圖案時減少鎢圖案中的凹陷來最小化鎢研磨速率的降低同時提高漿料穩定性的研磨鎢圖案晶圓之化學機械研磨漿料組成物，以及一種使用其研磨鎢圖案晶圓之方法。[ 相關申請案的交叉參考 ] The invention relates to a chemical mechanical polishing slurry composition for polishing tungsten patterned wafers and a method for polishing tungsten patterned wafers using the same. More specifically, the present invention relates to a chemical mechanical polishing slurry for polishing tungsten patterned wafers that can minimize the decrease in tungsten polishing rate while improving the stability of the slurry by reducing the recesses in the tungsten pattern when polishing the tungsten pattern Material composition, and a method of using it to grind tungsten patterned wafers. [ Cross reference of related applications ]
本申請案主張於2019年11月1日在韓國智慧財產局提出申請的韓國專利申請案第10-2019-0138920號的權利，所述韓國專利申請案的全部揭露內容併入本案供參考。This application claims the rights of the Korean Patent Application No. 10-2019-0138920 filed with the Korean Intellectual Property Office on November 1, 2019, and the entire disclosure of the Korean patent application is incorporated into this case for reference.
化學機械研磨（chemical mechanical polishing；CMP）組成物及研磨（或平整）基板表面的方法在相關技術中為眾所習知的。研磨半導體基板上的金屬層（例如鎢層）的研磨組成物可包含懸浮在水溶液中的磨料顆粒及化學促進劑（例如氧化劑、螯合劑、觸媒等）。The method of chemical mechanical polishing (CMP) composition and polishing (or flattening) the surface of the substrate is well known in the related art. The polishing composition for polishing a metal layer (for example, a tungsten layer) on a semiconductor substrate may include abrasive particles and a chemical accelerator (for example, an oxidant, a chelating agent, a catalyst, etc.) suspended in an aqueous solution.
為研磨金屬層中的鎢層，增加鎢研磨速率為重要的。然而，減少經研磨鎢層中的凹陷以及提高研磨速率亦為重要的。傳統上，為減少凹陷，作為腐蝕抑制劑，將胺基酸化合物添加至研磨組成物中。然而，儘管可藉由添加胺基酸化合物來減少凹陷，但存在鎢層的研磨速率降低的問題。In order to polish the tungsten layer in the metal layer, it is important to increase the tungsten polishing rate. However, it is also important to reduce the pits in the polished tungsten layer and increase the polishing rate. Traditionally, to reduce pits, amino acid compounds are added to the polishing composition as corrosion inhibitors. However, although the pitting can be reduced by adding an amino acid compound, there is a problem that the polishing rate of the tungsten layer decreases.
本發明的一個目的是提供一種可在研磨鎢圖案時減少鎢圖案中的凹陷的同時最小化鎢研磨速率的降低的研磨鎢圖案晶圓之化學機械研磨漿料組成物。An object of the present invention is to provide a chemical mechanical polishing slurry composition for polishing a tungsten pattern wafer that can reduce the recesses in the tungsten pattern while minimizing the decrease in the tungsten polishing rate when the tungsten pattern is polished.
本發明的另一目的是提供一種具有提高的漿料穩定性的研磨鎢圖案晶圓之化學機械研磨漿料組成物。Another object of the present invention is to provide a chemical mechanical polishing slurry composition for polishing tungsten patterned wafers with improved slurry stability.
根據本發明的一個態樣，一種研磨鎢圖案晶圓之化學機械研磨漿料組成物包含：選自極性溶劑及非極性溶劑中的至少一者；磨蝕劑；由式1表示的化合物；及多羧酸（polycarboxylic acid），其中在所述化學機械研磨漿料組成物中，所述由式1表示的化合物以約0.001重量%至約2重量%的量存在，且所述多羧酸以約0.001重量%至約5重量%的量存在：
[式1]
根據本發明的另一態樣，一種研磨鎢圖案晶圓之方法包括使用根據本發明的研磨鎢圖案晶圓之化學機械研磨漿料組成物來研磨鎢圖案晶圓。According to another aspect of the present invention, a method of polishing a tungsten patterned wafer includes using the chemical mechanical polishing slurry composition for polishing a tungsten patterned wafer according to the present invention to polish a tungsten patterned wafer.
本發明提供一種可在研磨鎢圖案時減少鎢圖案中的凹陷的同時最小化鎢研磨速率的降低的研磨鎢圖案晶圓之化學機械研磨漿料組成物。The present invention provides a chemical mechanical polishing slurry composition for polishing a tungsten pattern wafer that can reduce the recesses in the tungsten pattern while minimizing the decrease in the tungsten polishing rate when the tungsten pattern is polished.
本發明提供一種具有提高的漿料穩定性的研磨鎢圖案晶圓之化學機械研磨漿料組成物。The invention provides a chemical mechanical polishing slurry composition for polishing tungsten patterned wafers with improved slurry stability.
本文所用的術語「經取代或未經取代的」中的術語「經取代」意指對應官能基中的至少一個氫原子被選自由羥基、C1 至C10 烷基或鹵代烷基、C2 至C10 烯基或鹵代烯基、C2 至C10 炔基或鹵代炔基、C3 至C10 環烷基、C3 至C10 環烯基、C6 至C10 芳基、C7 至C10 芳基烷基、C1 至C10 烷氧基、C6 至C10 芳氧基、胺基、鹵素基、氰基及硫醇基組成的群組中的一者取代。The term "substituted" in the term "substituted or unsubstituted" as used herein means that at least one hydrogen atom in the corresponding functional group is selected from hydroxyl, C 1 to C 10 alkyl or haloalkyl, C 2 to C 10 alkenyl or haloalkenyl, C 2 to C 10 alkynyl or haloalkynyl, C 3 to C 10 cycloalkyl, C 3 to C 10 cycloalkenyl, C 6 to C 10 aryl, C One of the group consisting of 7 to C 10 arylalkyl, C 1 to C 10 alkoxy, C 6 to C 10 aryloxy, amine group, halogen group, cyano group, and thiol group is substituted.
本文中用於表示特定數值範圍的「X至Y」被定義為「大於或等於X且小於或等於Y」。"X to Y" used herein to indicate a specific numerical range is defined as "greater than or equal to X and less than or equal to Y".
本發明的發明人基於以下確認開發了本發明：研磨鎢圖案晶圓之化學機械研磨漿料組成物藉由包含特定量的由式1表示的化合物及多羧酸，可在研磨鎢圖案時減少鎢圖案中的凹陷，且可最小化鎢研磨速率的降低，同時提高漿料穩定性。The inventors of the present invention developed the present invention based on the following confirmation: the chemical mechanical polishing slurry composition for polishing a tungsten pattern wafer can reduce the amount of the compound represented by Formula 1 and a polycarboxylic acid in the polishing of the tungsten pattern. The recesses in the tungsten pattern can minimize the decrease in the tungsten polishing rate and improve the slurry stability.
根據本發明的研磨鎢圖案晶圓之化學機械研磨漿料組成物（以下稱為「CMP漿料組成物」）包含：選自極性溶劑及非極性溶劑中的至少一者；磨蝕劑；由式1表示的化合物；及多羧酸，其中，由式1表示的化合物以約0.001重量%至約2重量%的量存在於化學機械研磨漿料組成物中，且多羧酸以約0.001重量%至約5重量%的量存在於化學機械研磨漿料組成物中。The chemical mechanical polishing slurry composition for polishing tungsten patterned wafers (hereinafter referred to as "CMP slurry composition") according to the present invention includes: at least one selected from a polar solvent and a non-polar solvent; an abrasive; 1; and a polycarboxylic acid, wherein the compound represented by formula 1 is present in the chemical mechanical polishing slurry composition in an amount of about 0.001% by weight to about 2% by weight, and the polycarboxylic acid is about 0.001% by weight It is present in the chemical mechanical polishing slurry composition in an amount of up to about 5% by weight.
以下，將詳細闡述根據本發明的CMP漿料組成物的組分。Hereinafter, the components of the CMP slurry composition according to the present invention will be explained in detail.
選自極性溶劑及非極性溶劑中的至少一者可在用磨蝕劑研磨鎢圖案晶圓時減少摩擦。選自極性溶劑及非極性溶劑中的所述至少一者可包括水（例如，超純水或去離子水）、有機胺、有機醇、有機醇胺、有機醚、有機酮等。較佳地，使用超純水或去離子水。選自極性溶劑及非極性溶劑中的所述至少一者可以餘量包含於CMP漿料組成物中。At least one selected from the group consisting of a polar solvent and a non-polar solvent can reduce friction when the tungsten pattern wafer is polished with an abrasive. The at least one selected from polar solvents and non-polar solvents may include water (for example, ultrapure water or deionized water), organic amines, organic alcohols, organic alcohol amines, organic ethers, organic ketones, and the like. Preferably, ultrapure water or deionized water is used. The at least one selected from a polar solvent and a non-polar solvent may be included in the CMP slurry composition in a balance.
磨蝕劑可以高研磨速率研磨絕緣層（例如，氧化矽層）及鎢金屬層。具體而言，磨蝕劑為金屬或非金屬氧化物磨蝕劑，且可包括選自二氧化矽、二氧化鈰、二氧化鈦以及氧化鋯中的至少一者。特別地，磨蝕劑可為二氧化矽。The abrasive can polish the insulating layer (for example, the silicon oxide layer) and the tungsten metal layer at a high polishing rate. Specifically, the abrasive is a metal or non-metal oxide abrasive, and may include at least one selected from silicon dioxide, ceria, titanium dioxide, and zirconium oxide. In particular, the abrasive may be silicon dioxide.
磨蝕劑包括圓形或非圓形顆粒，且磨蝕劑的初級顆粒可具有約10奈米至200奈米、例如約40奈米至120奈米的平均粒徑（D50）。在此範圍內，CMP漿料組成物可確保作為根據本發明的研磨目標的絕緣層及鎢金屬層的足夠研磨速率，而不會在研磨後產生表面缺陷（刮傷等）。作為熟習此項技術者已知的典型粒徑，「平均粒徑（D50）」意指在磨蝕劑的重量分佈中對應於50重量%的顆粒的直徑。The abrasive includes round or non-round particles, and the primary particles of the abrasive may have an average particle diameter (D50) of about 10 nanometers to 200 nanometers, for example, about 40 nanometers to 120 nanometers. Within this range, the CMP slurry composition can ensure a sufficient polishing rate of the insulating layer and the tungsten metal layer that are the polishing target according to the present invention without causing surface defects (scratches, etc.) after polishing. As a typical particle size known to those skilled in the art, "average particle size (D50)" means the diameter of particles corresponding to 50% by weight in the weight distribution of the abrasive.
在CMP漿料組成物中，磨蝕劑可以約0.001重量%至約20重量%、較佳地約0.01重量%至約10重量%、更佳地約0.01重量%至約5重量%以及最佳地約0.05重量%至約5重量%的量存在。在此範圍內，CMP漿料組成物可確保絕緣層及鎢金屬層的足夠研磨速率，同時確保漿料分散穩定性而不產生刮傷。In the CMP slurry composition, the abrasive may be about 0.001% by weight to about 20% by weight, preferably about 0.01% by weight to about 10% by weight, more preferably about 0.01% by weight to about 5% by weight, and most preferably It is present in an amount of about 0.05% by weight to about 5% by weight. Within this range, the CMP slurry composition can ensure a sufficient polishing rate of the insulating layer and the tungsten metal layer, while ensuring slurry dispersion stability without scratching.
在CMP漿料組成物中，由式1表示的化合物可以約0.001重量%至約2重量%（例如，0.001重量%、0.002重量%、0.003重量%、0.004重量%、0.005重量%、0.006重量%、0.007重量%、0.008重量%、0.009重量%、0.01重量%、0.02重量%、0.03重量%、0.04重量%、0.05重量%、0.06重量%、0.07重量%、0.08重量%、0.09重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1 wt%或2重量%）的量存在。在此範圍內，CMP漿料組成物可減少研磨鎢層時凹陷的產生，且可最小化鎢研磨速率的降低。較佳地，由式1表示的化合物以約0.005重量%至約0.2重量%、更佳地約0.005重量%至約0.05重量%的量存在。In the CMP slurry composition, the compound represented by Formula 1 may be about 0.001% by weight to about 2% by weight (for example, 0.001% by weight, 0.002% by weight, 0.003% by weight, 0.004% by weight, 0.005% by weight, 0.006% by weight) , 0.007 wt%, 0.008 wt%, 0.009 wt%, 0.01 wt%, 0.02 wt%, 0.03 wt%, 0.04 wt%, 0.05 wt%, 0.06 wt%, 0.07 wt%, 0.08 wt%, 0.09 wt%, 0.1 % By weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, or 2% by weight). Within this range, the CMP slurry composition can reduce the generation of pits when polishing the tungsten layer, and can minimize the decrease in the tungsten polishing rate. Preferably, the compound represented by Formula 1 is present in an amount of about 0.005% to about 0.2% by weight, more preferably about 0.005% to about 0.05% by weight.
[式1]
在一個實施例中，在式1中，R3 可為-C(=O)O-且R4 可為-NH3 + 。在此實施例中，由式1表示的化合物的立體中心碳C*衍生自胺基酸，由此容許容易地製備由式1表示的化合物並降低鎢蝕刻（腐蝕）速率。此外，在由式1表示的化合物中，含磷官能基表現出陰離子性質，且立體中心碳C*表現出兩性離子性質，由此同時達成鎢蝕刻（腐蝕）速率的降低及金屬觸媒的螯合。本文中，胺基酸可包括絲胺酸、酪胺酸及半胱胺酸，但不限於此。In one embodiment, in Formula 1, R 3 may be -C(=O)O- and R 4 may be -NH 3 + . In this embodiment, the stereocenter carbon C* of the compound represented by Formula 1 is derived from an amino acid, thereby allowing the compound represented by Formula 1 to be easily prepared and reducing the tungsten etching (corrosion) rate. In addition, in the compound represented by Formula 1, the phosphorus-containing functional group exhibits anionic properties, and the stereocenter carbon C* exhibits zwitterionic properties, thereby simultaneously achieving a reduction in tungsten etching (corrosion) rate and metal catalyst chelation Together. Herein, the amino acid may include serine, tyrosine, and cysteine, but is not limited thereto.
在另一實施例中，在式1中，R3 可為-C(=O)OH且R4 可為-NH2 。在此實施例中，由式1表示的化合物衍生自胺基酸，由此容許容易地製備由式1表示的化合物並降低鎢蝕刻（腐蝕）速率。In another embodiment, in Formula 1, R 3 can be -C(=O)OH and R 4 can be -NH 2 . In this embodiment, the compound represented by Formula 1 is derived from an amino acid, thereby allowing the compound represented by Formula 1 to be easily prepared and reducing the tungsten etching (corrosion) rate.
在一個實施例中，在式1中，R1 及R2 可各自獨立地選自由羥基（-OH）、帶負電荷的氧離子（-O- ）、烷氧基及芳氧基組成的群組，且R1 及R2 中的至少一者可為羥基或帶負電荷的氧離子（-O- ）。由式1表示的化合物可包含磷酸酯基、次膦酸酯基或膦酸酯基，由此能夠達成金屬觸媒的螯合。In one embodiment, in Formula 1, R 1 and R 2 may be each independently selected from the group consisting of hydroxyl (-OH), negatively charged oxygen ions (-O -), alkoxy and aryloxy group consisting of group, and R 1 and R 2 in at least one hydroxy group or may be negatively charged oxygen ions (-O -). The compound represented by Formula 1 may contain a phosphate group, a phosphinate group, or a phosphonate group, thereby being able to achieve chelation of the metal catalyst.
在一個實施例中，具有立體中心碳C*的由式1表示的化合物可為單獨的異構體或兩種異構體的混合物（外消旋混合物），但不限於此。In one embodiment, the compound represented by Formula 1 having a stereocenter carbon C* may be a single isomer or a mixture of two isomers (racemic mixture), but is not limited thereto.
在式1中，「單價脂族烴基」可為經取代或未經取代的C1 至C20 直鏈或支鏈烷基，較佳地C1 至C10 烷基，更佳地C1 至C5 烷基。In Formula 1, "monovalent aliphatic hydrocarbon group" may be substituted or non-substituted C 1 to C 20 linear or branched alkyl, preferably C 1 to C 10 alkyl group, more preferably a C 1 to C 5 alkyl.
在式1中，「單價脂環族烴基」可為經取代或未經取代的C3 至C20 脂環族烴基，較佳地C3 至C10 脂環族烴基，更佳地C3 至C5 脂環族烴基。In Formula 1, the "monovalent alicyclic hydrocarbon group" may be a substituted or unsubstituted C 3 to C 20 alicyclic hydrocarbon group, preferably a C 3 to C 10 alicyclic hydrocarbon group, more preferably C 3 to C 5 alicyclic hydrocarbon group.
在式1中，「單價芳族烴基」可為經取代或未經取代的C6 至C20 芳基或者經取代或未經取代的C7 至C20 芳基烷基，較佳地C6 至C10 芳基或C7 至C10 芳基烷基。In Formula 1, the "monovalent aromatic hydrocarbon group" may be a substituted or unsubstituted C 6 to C 20 aryl group or a substituted or unsubstituted C 7 to C 20 aryl alkyl group, preferably C 6 To C 10 aryl or C 7 to C 10 aryl alkyl.
在式1中，「烷氧基」可為具有連接至單價脂族烴基或單價脂環族烴基的二價氧的官能基，且可包括例如經取代或未經取代的C1 至C20 直鏈或支鏈烷氧基，較佳地C1 至C10 烷氧基，更佳地C1 至C5 烷氧基。In Formula 1, the "alkoxy group" may be a functional group having a divalent oxygen connected to a monovalent aliphatic hydrocarbon group or a monovalent alicyclic hydrocarbon group, and may include, for example, substituted or unsubstituted C 1 to C 20 straight Chain or branched alkoxy, preferably C 1 to C 10 alkoxy, more preferably C 1 to C 5 alkoxy.
在式1中，「芳氧基」可為具有連接至單價芳族烴基的二價氧的官能基，且可包括例如經取代或未經取代的C6 至C20 芳氧基，例如C6 至C10 芳氧基。In Formula 1, the "aryloxy group" may be a functional group having a divalent oxygen connected to a monovalent aromatic hydrocarbon group, and may include, for example, a substituted or unsubstituted C 6 to C 20 aryloxy group, such as C 6 To C 10 aryloxy.
在式1中，「含有至少一個氮原子的脂環族基」意指含有至少一個氮原子並具有2至6個成環碳原子、較佳地2至5個成環碳原子的脂環族基。In formula 1, "alicyclic group containing at least one nitrogen atom" means an alicyclic group containing at least one nitrogen atom and having 2 to 6 ring-forming carbon atoms, preferably 2 to 5 ring-forming carbon atoms base.
在式1中，「含有至少一個氮原子的芳族基」意指含有至少一個氮原子並具有3至10個成芳族環碳原子、較佳地3至8個成芳族環碳原子的芳族基。含有至少一個氮原子的芳族基可以單個環或兩個或更多個芳族基的稠環的形式提供。In formula 1, "aromatic group containing at least one nitrogen atom" means a group containing at least one nitrogen atom and having 3 to 10 aromatic ring carbon atoms, preferably 3 to 8 aromatic ring carbon atoms Aromatic group. The aromatic group containing at least one nitrogen atom may be provided in the form of a single ring or a condensed ring of two or more aromatic groups.
在式1中，相對於L定義的「二價連接基」意指「單價脂族烴基」、「單價脂環族烴基」及「單價芳族烴基」中的每一者的改質二價基。例如，「二價連接基」可為經取代或未經取代的C1 至C20 直鏈或支鏈伸烷基，較佳地C1 至C10 伸烷基，更佳地C1 至C5 伸烷基；經取代或未經取代的C3 至C20 伸環烷基，較佳地C3 至C10 伸環烷基，更佳地C3 至C5 伸環烷基；經取代或未經取代的C6 至C20 伸芳基；或者經取代或未經取代的C7 至C20 芳基伸烷基，較佳地C6 至C10 伸芳基，或C7 至C10 芳基伸烷基。In Formula 1, the "divalent linking group" defined with respect to L means the modified divalent group of each of "monovalent aliphatic hydrocarbon group", "monovalent alicyclic hydrocarbon group" and "monovalent aromatic hydrocarbon group" . For example, the "divalent linking group" may be a substituted or unsubstituted C 1 to C 20 linear or branched alkylene group, preferably C 1 to C 10 alkylene group, more preferably C 1 to C 5 alkylene; substituted or unsubstituted C 3 to C 20 cycloalkylene, preferably C 3 to C 10 cycloalkylene, more preferably C 3 to C 5 cycloalkylene; substituted Or unsubstituted C 6 to C 20 aryl alkylene; or substituted or unsubstituted C 7 to C 20 aryl alkylene, preferably C 6 to C 10 aryl alkylene, or C 7 to C 10 Arylalkylene.
在一個實施例中，由式1表示的化合物可衍生自由式1-1或式1-2表示的一種化合物，但不限於此。In an embodiment, the compound represented by Formula 1 can be derived from a compound represented by Formula 1-1 or Formula 1-2, but is not limited thereto.
[式1-1]
[式1-2]
在CMP漿料組成物中，多羧酸可以約0.001重量%至約5重量%（例如，0.001重量%、0.002重量%、0.003重量%、0.004重量%、0.005重量%、0.006重量%、0.007重量%、0.008重量%、0.009重量%、0.01重量%、0.02重量%、0.03重量%、0.04重量%、0.05重量%、0.06重量%、0.07重量%、0.08重量%、0.09重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%或5重量%）的量存在。在此範圍內，CMP漿料組成物可確保良好的漿料穩定性，同時容許金屬觸媒的螯合。較佳地，多羧酸以0.005重量%至約0.2重量%、更佳地0.005重量%至約0.1重量%的量存在於CMP漿料組成物中。In the CMP slurry composition, the polycarboxylic acid may be about 0.001% by weight to about 5% by weight (for example, 0.001% by weight, 0.002% by weight, 0.003% by weight, 0.004% by weight, 0.005% by weight, 0.006% by weight, 0.007% by weight). %, 0.008% by weight, 0.009% by weight, 0.01% by weight, 0.02% by weight, 0.03% by weight, 0.04% by weight, 0.05% by weight, 0.06% by weight, 0.07% by weight, 0.08% by weight, 0.09% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 2% by weight, 3% by weight, 4% by weight, or 5% by weight %) exists. Within this range, the CMP slurry composition can ensure good slurry stability while allowing the chelation of the metal catalyst. Preferably, the polycarboxylic acid is present in the CMP slurry composition in an amount of 0.005% to about 0.2% by weight, more preferably 0.005% to about 0.1% by weight.
多羧酸可包括選自飽和或不飽和脂族多羧酸、脂環族多羧酸、芳族多羧酸及雜多羧酸中的至少一者。飽和或不飽和脂族多羧酸是指飽和或不飽和的C2 至C20 脂族多羧酸，且可包括選自例如丙二酸（malonic acid）、馬來酸（maleic acid）、蘋果酸（malic acid）、草醯乙酸（oxaloacetic acid）、富馬酸（fumaric acid）、琥珀酸（succinic acid）、戊二酸（glutaric acid）、檸檬酸（citric acid）、異檸檬酸（isocitric acid）、草酸（oxalic acid）、己二酸（adipic acid）、酒石酸（tartaric acid）、衣康酸（itaconic acid）、檸康酸（citraconic acid）及中康酸（mesaconic acid）中的至少一者。脂環族多羧酸是指C3 至C10 脂環族多羧酸，且可包括選自例如環戊烷四羧酸、環戊烷三羧酸、環戊烷二羧酸、環丁烷四羧酸、環丁烷三羧酸及環丁烷二羧酸中的至少一者。芳族多羧酸是指C6 至C20 的單環或多環（包括藉由連接基稠合或連接的形式）芳族多羧酸，且可包括選自例如對苯二甲酸、鄰苯二甲酸、間苯二甲酸及萘二甲酸中的至少一者。雜多羧酸是指含有至少一個氮或氧的C2 至C20 雜多羧酸，且可包括選自例如1,3-丙二胺四乙酸（1,3-propylenediaminetetraacetic acid，PDTA）、乙二胺四乙酸（ethylenediaminetetraacetic acid，EDTA）、二伸乙基三胺五乙酸（diethylenetriaminepentaacetic acid，DTPA）、次氮基三乙酸（nitrilotriacetic acid，NTA）、乙二胺-N,N'-二琥珀酸（ethylenediamine-N,N'-disuccinic acid，EDDS）、天冬胺酸、谷胺酸、四氫呋喃四羧酸及四氫呋喃二羧酸中的至少一者。較佳地，多羧酸包括選自丙二酸、馬來酸及蘋果酸中的至少一者，作為飽和或不飽和C2 至C5 脂族多羧酸。The polycarboxylic acid may include at least one selected from the group consisting of saturated or unsaturated aliphatic polycarboxylic acid, alicyclic polycarboxylic acid, aromatic polycarboxylic acid, and heteropolycarboxylic acid. The saturated or unsaturated aliphatic polycarboxylic acid refers to a saturated or unsaturated C 2 to C 20 aliphatic polycarboxylic acid, and may include selected from, for example, malonic acid, maleic acid, and apple Malic acid, oxaloacetic acid, fumaric acid, succinic acid, glutaric acid, citric acid, isocitric acid ), at least one of oxalic acid, adipic acid, tartaric acid, itaconic acid, citraconic acid and mesaconic acid . The alicyclic polycarboxylic acid refers to a C 3 to C 10 alicyclic polycarboxylic acid, and may include selected from, for example, cyclopentane tetracarboxylic acid, cyclopentane tricarboxylic acid, cyclopentane dicarboxylic acid, cyclobutane At least one of tetracarboxylic acid, cyclobutane tricarboxylic acid, and cyclobutane dicarboxylic acid. The aromatic polycarboxylic acid refers to a C 6 to C 20 monocyclic or polycyclic (including a form fused or connected by a linking group) aromatic polycarboxylic acid, and may include, for example, terephthalic acid, o-benzene At least one of dicarboxylic acid, isophthalic acid, and naphthalenedicarboxylic acid. Heteropolycarboxylic acid refers to a C 2 to C 20 heteropolycarboxylic acid containing at least one nitrogen or oxygen, and may include, for example, 1,3-propylenediaminetetraacetic acid (1,3-propylenediaminetetraacetic acid, PDTA), ethyl Diaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA), ethylenediamine-N,N'-disuccinic acid (Ethylenediamine-N,N'-disuccinic acid, EDDS), at least one of aspartic acid, glutamic acid, tetrahydrofurantetracarboxylic acid, and tetrahydrofurandicarboxylic acid. Preferably, the polycarboxylic acid includes at least one selected from malonic acid, maleic acid and malic acid as a saturated or unsaturated C 2 to C 5 aliphatic polycarboxylic acid.
CMP漿料組成物可更包含胺基酸。The CMP slurry composition may further include an amino acid.
胺基酸用於藉由穩定地保持CMP漿料組成物的pH來研磨絕緣層，以提高長期儲存穩定性。此外，藉由保持絕緣層與鎢膜之間的研磨速率比，胺基酸可為CMP漿料組成物的供應、維護及儲存提供便利。The amino acid is used to polish the insulating layer by stably maintaining the pH of the CMP slurry composition to improve long-term storage stability. In addition, by maintaining the polishing rate ratio between the insulating layer and the tungsten film, the amino acid can facilitate the supply, maintenance, and storage of the CMP slurry composition.
胺基酸可包括選自甘胺酸、異亮胺酸、亮胺酸、苯丙胺酸、蛋胺酸、蘇胺酸、色胺酸、纈胺酸、丙胺酸、精胺酸、半胱胺酸、谷胺醯胺、組胺酸、脯胺酸、絲胺酸、酪胺酸及離胺酸中的至少一者，但不限於此。The amino acid may include selected from glycine, isoleucine, leucine, phenylalanine, methionine, threonine, tryptophan, valine, alanine, arginine, cysteine , At least one of glutamine, histidine, proline, serine, tyrosine, and lysine, but not limited thereto.
在CMP漿料組成物中，胺基酸可以約0.001重量%至約10重量%、較佳地約0.01重量%至約5重量%、更佳地約0.01重量%至約2重量%、最佳地約0.01重量%至約0.5重量%的量存在。在此範圍內，CMP漿料組成物可抑制研磨鎢圖案晶圓時的腐蝕及凹陷的產生。In the CMP slurry composition, the amino acid may be about 0.001% by weight to about 10% by weight, preferably about 0.01% by weight to about 5% by weight, more preferably about 0.01% by weight to about 2% by weight, most preferably It is present in an amount of about 0.01% by weight to about 0.5% by weight. Within this range, the CMP slurry composition can inhibit corrosion and dents during polishing of the tungsten patterned wafer.
CMP漿料組成物可更包含選自鐵離子化合物、鐵離子的錯合化合物及其水合物中的至少一者。The CMP slurry composition may further include at least one selected from the group consisting of iron ion compounds, complex compounds of iron ions, and hydrates thereof.
鐵離子化合物、鐵離子的錯合化合物及其水合物可提高鎢金屬層及絕緣層的研磨速率。鐵離子化合物或其錯合物用作鎢金屬層的氧化劑，以提高相對於鎢金屬層及絕緣層中的每一者的研磨速率，同時藉由降低鎢金屬層的蝕刻速率來防止間隙的產生。Iron ion compounds, iron ion complex compounds and their hydrates can increase the polishing rate of the tungsten metal layer and the insulating layer. The iron ion compound or its complex is used as an oxidant for the tungsten metal layer to increase the polishing rate with respect to each of the tungsten metal layer and the insulating layer, and at the same time, to prevent the generation of gaps by reducing the etching rate of the tungsten metal layer .
鐵離子化合物可包括含三價鐵陽離子的化合物。含三價鐵陽離子的化合物可選自任何具有三價鐵陽離子的化合物，其在水溶液中以遊離陽離子的形式存在。例如，含三價鐵陽離子的化合物可包括選自氯化鐵（(FeCl3 ）、硝酸鐵（Fe(NO3 )3 ）及硫酸亞鐵（Fe2 (SO4 )3 ）中的至少一者，但不限於此。The iron ion compound may include a compound containing trivalent iron cation. The trivalent iron cation-containing compound can be selected from any compound having a trivalent iron cation, which exists as a free cation in the aqueous solution. For example, the compound containing trivalent iron cations may include at least one selected from iron chloride ((FeCl 3 ), iron nitrate (Fe(NO 3 ) 3 ), and ferrous sulfate (Fe 2 (SO 4 ) 3 ) , But not limited to this.
鐵離子的錯合化合物可包括含三價鐵陽離子的錯合化合物。含三價鐵陽離子的化合物可包括藉由使三價鐵陽離子與具有羧酸、磷酸、硫酸、胺基酸及胺中的至少一個官能基的有機或無機化合物在水溶液中反應而形成的化合物。有機或無機化合物可包括檸檬酸鹽、檸檬酸銨、對甲苯磺酸（p-toluene sulfonic acid，pTSA）、1,3-丙二胺四乙酸（PDTA）、乙二胺四乙酸（EDTA）、二伸乙基三胺五乙酸（DTPA）、次氮基三乙酸（NTA）及乙二胺-N,N'-二琥珀酸（EDDS），但不限於此。含三價鐵陽離子的化合物的實例可包括檸檬酸鐵、檸檬酸鐵銨、Fe(III)-pTSA、Fe(III)-PDTA及Fe(III)-EDTA，但不限於此。The complex compound of the iron ion may include a complex compound containing a trivalent iron cation. The trivalent iron cation-containing compound may include a compound formed by reacting the trivalent iron cation with an organic or inorganic compound having at least one functional group among carboxylic acid, phosphoric acid, sulfuric acid, amino acid, and amine in an aqueous solution. Organic or inorganic compounds may include citrate, ammonium citrate, p-toluene sulfonic acid (pTSA), 1,3-propanediaminetetraacetic acid (PDTA), ethylenediaminetetraacetic acid (EDTA), Diethylenetriaminepentaacetic acid (DTPA), nitrilotriacetic acid (NTA) and ethylenediamine-N,N'-disuccinic acid (EDDS), but not limited to these. Examples of the trivalent iron cation-containing compound may include ferric citrate, ferric ammonium citrate, Fe(III)-pTSA, Fe(III)-PDTA, and Fe(III)-EDTA, but are not limited thereto.
在CMP漿料組成物中，選自鐵離子化合物、鐵離子的錯合化合物及其水合物中的至少一者可以約0.001重量%至約10重量%（例如，0.001重量%、0.002重量%、0.003重量%、0.004重量%、0.005重量%、0.006重量%、0.007重量%、0.008重量%、0.009重量%、0.01重量%、0.02重量%、0.03重量%、0.04重量%、0.05重量%、0.06重量%、0.07重量%、0.08重量%、0.09重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、2重量%、3重量%、4重量%、5重量%、6重量%、7重量%、8重量%、9重量%或10重量%）、較佳地約0.001重量%至約5重量%、更佳地約0.001重量%至約1重量%、最佳地約0.001重量%至約0.5重量%的量存在。在此範圍內，CMP漿料組成物可表現出相對於鎢金屬層合適的氧化能力，以提高鎢層的研磨速率。In the CMP slurry composition, at least one selected from the group consisting of iron ion compounds, iron ion complex compounds and hydrates thereof may be about 0.001% by weight to about 10% by weight (for example, 0.001% by weight, 0.002% by weight, 0.003 weight%, 0.004 weight%, 0.005 weight%, 0.006 weight%, 0.007 weight%, 0.008 weight%, 0.009 weight%, 0.01 weight%, 0.02 weight%, 0.03 weight%, 0.04 weight%, 0.05 weight%, 0.06 weight% %, 0.07% by weight, 0.08% by weight, 0.09% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 2% by weight, 3% by weight, 4% by weight, 5% by weight, 6% by weight, 7% by weight, 8% by weight, 9% by weight or 10% by weight), preferably about 0.001% by weight to about It is present in an amount of 5 wt%, more preferably about 0.001 wt% to about 1 wt%, and most preferably about 0.001 wt% to about 0.5 wt%. Within this range, the CMP slurry composition can exhibit a suitable oxidizing ability relative to the tungsten metal layer, so as to increase the polishing rate of the tungsten layer.
CMP漿料組成物可更包含氧化劑。The CMP slurry composition may further include an oxidizing agent.
氧化劑可氧化絕緣層及鎢金屬層，以促進絕緣層及鎢金屬層的研磨，且可使絕緣層及鎢金屬膜的表面均勻，使得絕緣層及鎢金屬膜即使在研磨後亦具有良好的表面粗糙度。The oxidizer can oxidize the insulating layer and the tungsten metal layer to promote the grinding of the insulating layer and the tungsten metal layer, and make the surface of the insulating layer and the tungsten metal film uniform, so that the insulating layer and the tungsten metal film have a good surface even after grinding Roughness.
氧化劑可包括選自無機過化合物、有機過化合物、溴酸或其鹽、硝酸或其鹽、氯酸或其鹽、鉻酸或其鹽、碘酸或其鹽、鐵或其鹽、銅或其鹽、稀土金屬氧化物、過渡金屬氧化物及重鉻酸鉀中的至少一者。此處，過化合物是指含有至少一個過氧化基（-O-O-）或最高氧化態元素的化合物。較佳地，氧化劑為過化合物。例如，過化合物可包括選自過氧化氫、高碘酸鉀、過硫酸鈣及鐵氰化鉀中的至少一者，較佳為過氧化氫。The oxidizing agent may include selected from inorganic per compound, organic per compound, bromic acid or its salt, nitric acid or its salt, chloric acid or its salt, chromic acid or its salt, iodic acid or its salt, iron or its salt, copper or its salt At least one of salt, rare earth metal oxide, transition metal oxide, and potassium dichromate. Here, the per-compound refers to a compound containing at least one peroxy group (-O-O-) or element in the highest oxidation state. Preferably, the oxidizing agent is a per compound. For example, the per compound may include at least one selected from hydrogen peroxide, potassium periodate, calcium persulfate, and potassium ferricyanide, preferably hydrogen peroxide.
在CMP漿料組成物中，氧化劑可以約0.01重量%至約20重量%、較佳地約0.05重量%至約10重量%、更佳地約0.1重量%至約5重量%的量存在。在此範圍內，CMP漿料組成物可提高研磨選擇性。In the CMP slurry composition, the oxidizing agent may be present in an amount of about 0.01% by weight to about 20% by weight, preferably about 0.05% by weight to about 10% by weight, more preferably about 0.1% by weight to about 5% by weight. Within this range, the CMP slurry composition can improve polishing selectivity.
CMP漿料組成物可具有約1至約5（例如，1、2、3、4或5）、較佳為約2至4的pH。在此範圍內，CMP漿料組成物容許鎢容易氧化，同時防止研磨速率降低。The CMP slurry composition may have a pH of about 1 to about 5 (for example, 1, 2, 3, 4, or 5), preferably about 2 to 4. Within this range, the CMP slurry composition allows tungsten to be easily oxidized while preventing the polishing rate from decreasing.
CMP漿料組成物可更包含pH調節劑以保持合適的pH值。pH調節劑可包括選自無機酸（例如硝酸、磷酸、鹽酸及硫酸）及有機酸（例如pKa值為約6或小於6的有機酸，例如乙酸及鄰苯二甲酸）中的至少一者。pH調節劑可包括至少一種鹼，例如氫氧化鈉、氫氧化鉀、氫氧化銨、碳酸鈉及碳酸鉀。The CMP slurry composition may further include a pH adjuster to maintain a proper pH value. The pH adjusting agent may include at least one selected from inorganic acids (such as nitric acid, phosphoric acid, hydrochloric acid, and sulfuric acid) and organic acids (such as organic acids with a pKa value of about 6 or less, such as acetic acid and phthalic acid). The pH adjuster may include at least one base, such as sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, and potassium carbonate.
CMP漿料組成物可更包含典型的添加劑，例如界面活性劑、分散劑、改質劑及界面活性助劑（surface active agent）。The CMP slurry composition may further include typical additives, such as surfactants, dispersants, modifiers, and surface active agents.
根據本發明的研磨鎢圖案晶圓之方法包括使用根據本發明的研磨鎢圖案晶圓之CMP漿料組成物來研磨鎢圖案晶圓。The method for polishing a tungsten patterned wafer according to the present invention includes using the CMP slurry composition for polishing a tungsten patterned wafer according to the present invention to polish the tungsten patterned wafer.
接下來，將參考實例來更詳細地闡述本發明。然而，應注意提供該些實例僅用於說明，且不應被理解為以任何方式限制本發明。Next, the present invention will be explained in more detail with reference to examples. However, it should be noted that these examples are provided for illustration only, and should not be construed as limiting the present invention in any way.
在以下研磨條件下，對實例及比較例中製備的研磨鎢圖案晶圓之CMP漿料組成物進行了研磨評價。結果示於表4及5中。 [研磨評價條件]Under the following polishing conditions, polishing evaluation was performed on the CMP slurry composition for polishing tungsten patterned wafers prepared in the Examples and Comparative Examples. The results are shown in Tables 4 and 5. [Grinding evaluation conditions]
1. 研磨機：反射（Reflexion）300毫米（AMAT有限公司）1. Grinding machine: Reflexion 300mm (AMAT Co., Ltd.)
2. 研磨條件： -研磨墊：IC1010/SubaIV堆疊（Stacked）（羅德爾有限公司（Rodel Co., Ltd.）） -機頭速度：101轉/分鐘 -壓板速度：100轉/分鐘 -壓力：2.0磅/平方英吋 -扣環壓力（Retainer Ring Pressure）：8磅/平方英吋 -漿料流速：200毫升/分鐘 -研磨時間：60秒2. Grinding conditions: -Polishing pad: IC1010/SubaIV stacked (Stacked) (Rodel Co., Ltd.) -Head speed: 101 rpm -Pressing speed: 100 revolutions per minute -Pressure: 2.0 psi -Retainer Ring Pressure: 8 psi -Slurry flow rate: 200 ml/min -Grinding time: 60 seconds
3. 研磨目標 -市售鎢圖案晶圓（MIT 854，300毫米） -在多晶矽基板上依序沈積有300埃厚的氮化鈦（TiN）及6,000埃厚的鎢層的毯覆晶圓3. Grinding goals -Commercially available tungsten patterned wafers (MIT 854, 300 mm) -A blanket wafer with 300 angstroms of titanium nitride (TiN) and 6,000 angstroms of tungsten deposited sequentially on a polysilicon substrate
4. 分析方法 -凹陷（單位：奈米）：凹陷是藉由使用原子力顯微鏡（Uvx-Gen3，布魯克有限公司（Bruker Co., Ltd.））量測圖案的0.18 × 0.18微米區域中的輪廓來計算的 -研磨速率（單位：埃/分鐘）：研磨速率是基於與在上述研磨條件下進行的評價中研磨前後的膜厚度差異對應的電阻獲得的。實例 1 4. Analytical method-depression (unit: nanometer): the depression is measured by measuring the contour in the 0.18 × 0.18 micron area of the pattern using an atomic force microscope (Uvx-Gen3, Bruker Co., Ltd.) Calculated-Polishing rate (unit: Angstroms/minute): The polishing rate is obtained based on the resistance corresponding to the difference in film thickness before and after polishing in the evaluation performed under the above-mentioned polishing conditions. Example 1
此實例顯示出多羧酸對包含式1的化合物的漿料組成物的穩定性的影響。組成物的組分示於表1中。磨蝕劑為平均粒徑（D50）為約95奈米且被充以約35毫伏特的二氧化矽顆粒。使用去離子水作為溶劑。自表2所示的粒度資料可見，根據本發明的含有多羧酸的漿料組成物表現出較不含多羧酸的漿料組成物更佳的穩定性。在40℃的烘箱中儲存7天后使用顆粒分析儀（澤塔西澤爾奈米（Zetasizer Nano），莫爾文有限公司（Malvern Co., Ltd.））量測了在高溫下儲存的漿料顆粒的粒徑。This example shows the effect of polycarboxylic acid on the stability of a slurry composition containing the compound of Formula 1. The components of the composition are shown in Table 1. The abrasive is silica particles with an average particle size (D50) of about 95 nanometers and filled with about 35 millivolts. Use deionized water as the solvent. From the particle size data shown in Table 2, it can be seen that the polycarboxylic acid-containing slurry composition according to the present invention exhibits better stability than the polycarboxylic acid-free slurry composition. After 7 days of storage in a 40°C oven, a particle analyzer (Zetasizer Nano, Malvern Co., Ltd.) was used to measure the slurry particles stored at high temperature的particle size.
表1
表2
此實例顯示出式1的化合物對鎢蝕刻（腐蝕）速率及鎢研磨速率的影響。組成物的組分示於表3中。自表4所示的鎢蝕刻（腐蝕）速率可見，含有式1的化合物的漿料組成物具有較不含有式1的化合物或含有含磷官能基的其他組成物更低的鎢蝕刻（腐蝕）速率。此外，自表4所示的鎢研磨速率可見，與式1的化合物對應的含磷胺基酸表現出較其他胺基酸更低的鎢蝕刻（腐蝕）速率及更高的鎢研磨速率。此外，如表4所示，當以相同莫耳量使用時，與式1的化合物對應的含磷胺基酸容許較含磷化合物及胺基酸更高的鎢研磨速率。鎢研磨速率是在50℃的溫度下量測的，且是基於與研磨前後的膜厚度差異對應的電阻獲得的。This example shows the effect of the compound of Formula 1 on the tungsten etching (corrosion) rate and the tungsten grinding rate. The components of the composition are shown in Table 3. From the tungsten etching (corrosion) rate shown in Table 4, it can be seen that the slurry composition containing the compound of formula 1 has lower tungsten etching (corrosion) than other compositions that do not contain the compound of formula 1 or containing phosphorus-containing functional groups. rate. In addition, from the tungsten polishing rate shown in Table 4, it can be seen that the phosphorous-containing amino acid corresponding to the compound of Formula 1 exhibits a lower tungsten etching (corrosion) rate and a higher tungsten polishing rate than other amino acids. In addition, as shown in Table 4, when used in the same molar amount, the phosphorus-containing amino acid corresponding to the compound of Formula 1 allows a higher tungsten polishing rate than the phosphorus-containing compound and the amino acid. The tungsten polishing rate is measured at a temperature of 50°C and is obtained based on the electrical resistance corresponding to the difference in film thickness before and after polishing.
表3
表4
此實例顯示出式1的化合物對鎢凹陷的影響。自表5所示的鎢凹陷可見，含有式1的化合物的漿料組成物表現出較不含有式1的化合物或含有含磷官能基的其他組成物小的鎢凹陷。This example shows the effect of the compound of Formula 1 on tungsten depression. It can be seen from the tungsten recesses shown in Table 5 that the slurry composition containing the compound of Formula 1 exhibits smaller tungsten recesses than other compositions that do not contain the compound of Formula 1 or contain a phosphorus-containing functional group.
表5
應理解，在不背離本發明的精神及範圍的條件下，熟習此項技術者可作出各種修改、改變、變更及等效實施例。It should be understood that those skilled in the art can make various modifications, changes, alterations and equivalent embodiments without departing from the spirit and scope of the present invention.
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| US10066126B2 (en) * | 2016-01-06 | 2018-09-04 | Cabot Microelectronics Corporation | Tungsten processing slurry with catalyst |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| US10640682B2 (en) * | 2016-09-29 | 2020-05-05 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| KR20190057085A (en) * | 2016-09-29 | 2019-05-27 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Chemical mechanical polishing method for tungsten |
| US11655394B2 (en) * | 2017-08-09 | 2023-05-23 | Resonac Corporation | Polishing solution and polishing method |
-
2019
- 2019-11-01 KR KR1020190138920A patent/KR102570805B1/en active IP Right Grant
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2020
- 2020-10-28 CN CN202080060553.XA patent/CN114302930B/en active Active
- 2020-10-28 WO PCT/KR2020/014826 patent/WO2021086015A1/en active Application Filing
- 2020-10-30 TW TW109137844A patent/TWI825357B/en active
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| Publication number | Publication date |
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| CN114302930A (en) | 2022-04-08 |
| TWI825357B (en) | 2023-12-11 |
| WO2021086015A1 (en) | 2021-05-06 |
| KR20210053082A (en) | 2021-05-11 |
| CN114302930B (en) | 2023-08-08 |
| KR102570805B1 (en) | 2023-08-24 |
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