TW202118356A - Plasma source - Google Patents

Abstract

An inductively coupled plasma source with a simple configuration, has an antenna cooling mechanism capable of reducing costs required for such devices. The plasma source 10 is configured to generate plasma in a vacuum vessel 21, and includes a frame (antenna fixing frame 12) provided in a wall 211 of the vacuum vessel 21 and a surface antenna 11 fixed in the frame. Periphery of the antenna 11 is surrounded by the frame, so that heat generated in the antenna 11 flows from the periphery to the frame and further flows from the frame to the vacuum vessel. Thus, the antenna is efficiently cooled. Therefore, a liquid or gas refrigerant is unnecessary, and thus the configuration can be simplified. Furthermore, a temperature control device and a circulation device are unnecessary, so that the cost required for the devices is reduced.

Description

Plasma source

The present invention relates to an inductively coupled plasma source.

In an inductively coupled plasma source, after introducing gas into the space where the plasma is generated, a high-frequency current is caused to flow to an antenna arranged near or in the space, and a high-frequency electromagnetic field is generated in the space, thereby making The molecules of the gas dissociate into cations and electrons to generate plasma. At this time, since high-frequency current flows through the antenna to generate Joule heat, it is necessary to cool the antenna. In Patent Document 1, it is described that a conductive tube is used as an antenna, and a liquid or gas refrigerant is allowed to flow in the tube to cool the antenna. The antenna is attached to a cover member made of metal (for example, stainless steel) through a feedthrough member, and the cover member is fixed to the wall so as to close an opening provided in the wall of the vacuum container, thereby being mounted on the vacuum container. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2010-212105 A

[The problem to be solved by the invention]

In the plasma source described in Patent Document 1, it is necessary to connect electrodes for introducing high-frequency currents at both ends of an antenna, that is, a conductive tube, and to connect a refrigerant for introducing liquid or gas into the tube (with antenna Different) other tubes, so the structure is complicated. In addition, a device for managing the temperature of the refrigerant is required, or when the refrigerant is circulated and used, a circulation device or the like is required, which incurs the cost required for the device.

The problem to be solved by the present invention is to provide an inductively coupled plasma source having an antenna cooling mechanism that is simple in structure and can reduce the cost of the device. [Technical means to solve the problem]

The plasma source of the present invention, completed in order to solve the above-mentioned problems, is an apparatus for generating plasma in a vacuum container, and is characterized by having: a) A frame provided on the wall of the above-mentioned vacuum container, and b) A planar antenna fixed in the above frame.

In the plasma source of the present invention, the heat generated by the planar antenna is transferred to the vacuum container, which is a heat bath, through the frame to which the antenna is fixed, thereby cooling the antenna. Since the periphery of the planar antenna is surrounded by the frame, the heat generated by the antenna flows out from the surroundings to the frame, and then flows out from the frame to the vacuum container, thereby cooling efficiently. Therefore, there is no need to use a liquid or gas refrigerant, the structure can be simplified, and a temperature management device or a circulation device for the refrigerant is unnecessary, so the cost required for the device can be suppressed.

If it is a normal plasma processing device, the vacuum container is made of a metal body with a relatively large mass, so it is very possible for such a relatively large metal body (heat bath) to absorb the heat generated by the antenna. This can also reduce heat conduction to the power supply side that supplies current to the antenna.

Regarding the material of the frame, it is preferable to use a metal in terms of high self-heat conductivity. Alternatively, materials with higher thermal conductivity other than metals, such as aluminum nitride (AlN), can also be used.

In the plasma source of the present invention, the frame and the antenna may be configured to be provided on a cover member that closes the opening of the vacuum container. Alternatively, the above-mentioned frame and the above-mentioned antenna may also be used as a cover member of the opening. As a result, since the planar antenna is disposed in the opening of the vacuum container, not only can the heat generated by the antenna be conducted to the vacuum container through the frame, but also can be released from the surface of the antenna to the outside of the vacuum container. Therefore, the antenna can be cooled more efficiently.

In the case where the frame and the antenna are provided on the cover member, it is preferable to further include a dielectric window, which is a plate material of a dielectric system and is arranged on the opening side of the antenna. Thereby, the antenna can be protected from the plasma in the vacuum container. Here, the dielectric window receives heat from the plasma, but in the present invention, the heat can also be discharged to the vacuum container through the antenna and the frame. In order to generate a high-frequency electromagnetic field in the vacuum container without weakening the strength as much as possible, the thickness of the dielectric window is preferably thinner, for example, set to 5 mm or less.

When a dielectric window is arranged on the opening side of the antenna, it is preferable to further include a vacuum seal arranged between the wall around the opening and the dielectric window. In this way, the opening is hermetically closed by the dielectric window and the vacuum seal.

Furthermore, when a dielectric window is arranged on the opening side of the antenna, it is preferable to further fill the gap between the antenna and the dielectric window with a dielectric-based adhesive. Thereby, the adhesion of the dielectric window is better than when it is in direct contact with the antenna. Since the dielectric window is in contact with the adhesive and the adhesive is in contact with the antenna, the dielectric window can allow the heat received from the plasma to pass through the adhesive. It is efficiently conducted to the antenna (the heat conducted to the antenna flows into the vacuum container through the frame as described above). As such an adhesive, resin-made adhesives such as silicone resins, epoxy-based resins, Teflon (registered trademark) resins, or glass-made adhesives such as sintered glass are suitably used, but it is not limited to those exemplified here. By.

In the case where the frame and the antenna are provided on the cover member, it is preferable to further include an insulator plate, which is a plate of an insulator and is in contact with the frame. Thereby, the insulator plate can be used to bear the pressure difference between the vacuum container and the atmosphere, and the antenna and the frame can be electrically insulated. Since the heat of the antenna flows to the frame via the insulator plate, the material of the insulator plate is preferably made of a material with high thermal conductivity such as AlN.

When the insulator plate is provided, it is preferable to further fill the gap between the antenna and the insulator plate with a dielectric-based adhesive. Thereby, as in the case where the adhesive is filled between the antenna and the dielectric window as described above, the heat generated by the antenna can be efficiently conducted to the insulator plate through the adhesive. The adhesive used here can also suitably use resin-made adhesives such as silicone-based resins, epoxy-based resins, and Teflon-based resins, or glass-made adhesives such as sintered glass, but it is not limited to those exemplified here.

In a planar antenna, high-frequency current flows only near the surface due to the skin effect. Therefore, making the planar antenna thicker wastes material. Therefore, the thickness of the above-mentioned antenna is preferably thin within the range where the mechanical strength can be maintained, for example, it may be set to 1 to 1000 μm. Furthermore, the planar antenna is not limited to the planar (unbent) shape, and may be curved. In addition, the planar antenna may be flexible. [Effects of the invention]

According to the present invention, the structure of the cooling mechanism of the antenna in the inductively coupled plasma source can be simplified, and the cost required for the device can be suppressed.

1-7, the embodiment of the plasma source of the present invention will be described.

(1) The configuration of the plasma source of the first embodiment FIG. 1 is a diagram showing a schematic configuration of a plasma source 10 according to the first embodiment and a plasma processing apparatus 1 having the plasma source 10. The plasma processing apparatus 1 is a film forming apparatus using the plasma CVD method. In addition to the plasma source 10, it has a vacuum container 21, a vacuum pump 22, a gas supply part 23, a substrate holding part 24, a substrate loading and unloading port 25, and a high-frequency power supply. 26, and impedance matching device 27.

First, the constituent elements of the plasma processing apparatus 1 other than the plasma source 10 will be described. The vacuum container 21 has a wall 211 made of metal (for example, stainless steel), and plasma is generated in the internal space 212 of the vacuum container 21 formed on the inner side of the wall 211. The vacuum pump 22 is a pump configuration that evacuates the internal space 212. The gas supply unit 23 is composed of an air cylinder (not shown) and a gas introduction pipe, and supplies a plasma-generating gas such as argon or hydrogen, and a film-forming material gas to the internal space 212. Furthermore, when the substrate S is processed without using the gas of the film-forming raw material for film formation by the sputtering method or cleaning of the substrate S using plasma, only the electricity is supplied from the gas supply unit 23 The slurry generation gas is supplied to the internal space 212. The base holding portion 24 holds the base S. The substrate loading and unloading port 25 is provided on the wall 211, which is used when the substrate S is carried in from the vacuum vessel 21 to the substrate holding portion 24 before film formation, and when the substrate S is carried out from the substrate holding portion 24 to the outside of the vacuum vessel 21 after film formation. At this time, the loading and unloading port through which the substrate S passes. Except when the base body S is carried in and out, the base body carry-in/out port 25 is sealed with a lid member 251. The high-frequency power source 26 is a power source that supplies a high-frequency current to the antenna 11 described below. The impedance matcher 27 adjusts the impedance so as to efficiently introduce the high-frequency current from the high-frequency power source 26 to the antenna 11.

In this embodiment, two plasma sources 10 are provided in one plasma processing apparatus 1. However, the number of plasma sources 10 is not limited to this, and may be only one or three or more. Each plasma source 10 includes an antenna 11, an antenna fixing frame (the aforementioned frame) 12, a plate-shaped insulating material 13, a plate-shaped dielectric window 14, two high-frequency current supply bars 15, and an airtight holding portion 16.

In this embodiment, the antenna 11 uses a planar antenna made of a metal plate. In this embodiment, copper is used as the material of the antenna 11, but it may be a conductor other than copper. Two high-frequency current supply bars 15 are respectively contacted on one surface of the antenna 11. The two high-frequency current supply bars 15 are substantially parallel to each other, and are connected to the high-frequency power source 26 and the impedance matcher 27 through the feed terminal 151 and the feed line 152. The length of each high-frequency current supply bar 15 is 30 mm, and the interval between two high-frequency current supply bars 15 is 150 mm.

On the above-mentioned one surface of the antenna 11, the insulating material 13 is in contact with it, except for the part contacted by the high-frequency current supply bar 15. A notch for accommodating the high-frequency current supply bar 15 is provided on the surface of the insulating material 13 that is in contact with the antenna 11. On the other surface of the antenna 11, the dielectric window 14 is in contact with it. Therefore, the antenna 11 is in a state of being sandwiched by the insulating material 13 and the dielectric window 14. In other words, a laminated body 110 in which the insulating material 13, the antenna 11, and the dielectric window 14 are laminated in this order is formed. The laminated body 110 is arranged with one side of the dielectric window 14 facing the opening 213 provided in the wall (upper wall) 211 of the vacuum container 21.

As the material of the insulating material 13, alumina, zirconia, silicon nitride, aluminum nitride, etc. can be used. Among these materials, aluminum nitride is suitable in terms of relatively high thermal conductivity. The dielectric window 14 can also use the same material as the insulating material 13.

The antenna fixing frame 12 has a frame main body 121 that surrounds the side surface of the laminated body 110 and a protrusion 122 that protrudes from the frame main body 121 toward the surface of the laminated body 110 on the insulating material 13 side and covers a part of the surface. If the insulating material 13 side of the laminated body 110 is set to the upper side, the antenna fixing frame 12 has an inverted L-shape in a cross section perpendicular to the laminated body 110. The frame body 121 is provided with a hole penetrating from the upper surface to the lower surface, and the antenna fixing frame 12 is fixed to the wall (upper wall) 211 of the vacuum container 21 located around the opening 213 by the bolt 123 inserted into the hole . On the upper surface of the wall (upper wall) 211 on the inner side of the frame main body 121, an airtight holding part 16 is arranged, and the laminated body 110 is fixed in a state of being sandwiched by the protrusion 122 and the airtight holding part 16 up and down. The airtight holding portion 16 is provided with a sealing material (O ring) 161 on the upper surface and the lower surface of the frame-shaped member, respectively. The sealing material 161 on the upper surface is pressed against the dielectric window 14, and the sealing material 161 on the lower surface is pressed against the wall (upper wall) 211. With this configuration, the plasma source 10 functions as a cover member that hermetically closes the opening 213.

In order to make the high-frequency electromagnetic field generated in the internal space 212 of the vacuum container 21 larger, the dielectric window 14 in the laminated body 110 is preferably thinner. In addition, in the antenna 11, the high-frequency current flows only near the surface due to the skin effect. Therefore, making the antenna 11 thicker wastes material. On the other hand, the dielectric window 14 side of the laminated body 110 is in contact with the internal space 212 of the vacuum container 21 under vacuum, and the insulating material 13 side is in contact with the atmosphere, and receives the force generated by the pressure difference between the vacuum and the atmospheric pressure. It has the mechanical strength to withstand the pressure difference. Therefore, the insulating material 13 is preferably thicker. However, if the insulating material 13 is too thick, the heat dissipation efficiency of the antenna 11 decreases. Moreover, the required mechanical strength also depends on the size of the opening 213 of the vacuum container 21. The thicknesses of the antenna 11, the insulating material 13, and the dielectric window 14 are determined in consideration of the above aspects. In this embodiment, the opening 213 is a rectangle with a long side of 210 mm and a short side of 160 mm. The thickness of the antenna 11 is set to 0.6 mm, the thickness of the insulating material 13 is set to 20 mm, and the thickness of the dielectric window 14 is set to Is 3 mm. Of course, the thickness can be changed appropriately. For example, the thickness of the antenna 11 may be in the range of 1 to 1000 μm, the thickness of the insulating material 13 may be in the range of 3-20 mm, and the thickness of the dielectric window 14 may be in the range of 5 mm or less. Furthermore, the thickness of each member may be outside the range enumerated here.

Furthermore, in the plasma source 10 of this embodiment, a cooling mechanism for cooling the antenna 11 by flowing a refrigerant is not provided.

(2) Operation of the plasma source of the first embodiment The operation of the plasma source 10 of the first embodiment and the operation of the plasma processing apparatus 1 having the plasma source 10 will be described together.

First, the lid member 251 of the base loading/unloading port 25 is opened, and the base S is loaded into the internal space 212 of the vacuum container 21. After that, by placing the base S on the base holding portion 24, it is held by the base holding portion 24. After that, the cover member 251 of the base carrying-in/outlet 25 is closed, and the internal space 212 of the vacuum container 21 is vacuumed by the vacuum pump 22. Furthermore, the plasma generation gas and the film-forming source gas are supplied to the internal space 212 by the gas supply unit 23. Then, the high-frequency current is introduced from the high-frequency power supply 26 to the antenna 11. Thereby, a high-frequency electromagnetic field is generated in the internal space 212, and plasma is generated by dissociating molecules of the plasma-generating gas. With this plasma, the molecules of the film-forming source gas are decomposed and deposited on the substrate S, thereby forming a film.

During such film formation, heat is generated from the antenna 11 due to the flow of high-frequency current. The heat generated in this way flows into the wall 211 of the vacuum container 21 through the insulating material 13 and the antenna fixing frame 12 as shown by the arrow in FIG. 2. Here, the antenna 11 is surrounded by the antenna fixing frame 12, so the heat generated by the antenna 11 can efficiently flow out of the antenna fixing frame 12 from its surroundings. In addition, the wall 211 of the vacuum container 21 has a sufficiently large heat capacity, and it also generates heat when in contact with the atmosphere, so that it can sufficiently dissipate heat to cool the antenna 11. During this cooling, there is no need to use a cooling mechanism for cooling the antenna 11 by flowing a refrigerant. Therefore, the plasma source 10 of the present embodiment can suppress the initial cost and operating cost of the device.

In addition, in this embodiment, a planar antenna 11 is used to supply a high-frequency current between two high-frequency current supply bars 15 that are in contact with the surface of the antenna 11 and are substantially parallel to each other. Therefore, the high-frequency current is as shown in FIG. 3 As shown by the arrow, the flow diffuses on the surface of the planar antenna. Therefore, the antenna 11 of the present embodiment can flow a larger current than that of a linear antenna. In addition, heat is also dissipated from the surface of the planar antenna 11 to the atmosphere via the insulating material 13, so that the heat dissipation efficiency can be increased.

Hereinafter, the results obtained by conducting an experiment to measure the electron density of plasma generated using the plasma source of the first embodiment are shown. As a comparative example, the results of measuring the electron density of the generated plasma while flowing a refrigerant in a tube of a tubular antenna composed of a tube of a conventional conductive system are also shown. The tubular antenna is bent by 90° at two positions to form a substantially U-shaped shape, and the distance between the two positions is 100 mm. In this experiment, each of the plasma source and the tubular antenna of the first embodiment was used, and argon gas was introduced as a plasma generating gas so that the pressure became 1.0 Pa and the flow rate became 10 sccm. After that, high-frequency power was input to the antenna in the range of 50 to 400 W, and the electron density of the plasma was measured with a Lan Mou probe at a position 115 mm away from the antenna.

The experimental results are shown in Figure 4. In both the first embodiment and the comparative example, the electron density becomes higher in proportion to the magnitude of the high-frequency power. This means that in both the first embodiment and the comparative example, even if the high-frequency power is increased, the cooling of the antenna can be performed smoothly. Therefore, it can be said that according to the configuration of the first embodiment, without providing a cooling mechanism using a refrigerant, the antenna can be cooled in the same manner as the comparative example provided with such a cooling mechanism, and a plasma source at a lower cost can be obtained. In addition, regarding the electron density, the first embodiment is higher than that of the comparative example. It is considered that the reason is that the inductance of the antenna of the first embodiment is smaller than that of the comparative example, so the high-frequency current becomes larger.

(3) The configuration of the plasma source of the second embodiment The schematic configuration of the plasma source 10A of the second embodiment is shown in FIG. 5. Like the plasma source 10 of the first embodiment, this plasma source 10A is attached to the wall 211 of the vacuum container 21 so as to close the opening 213 of the vacuum container 21 provided in the plasma processing apparatus 1. In FIG. 5, the constituent elements of the plasma processing apparatus other than the plasma source 10A show only a part of the wall 211 of the vacuum container 21 and the opening 213, and illustrations other than these are omitted.

The plasma source 10A has an antenna 11A, an antenna fixing frame 12, a first insulating material 131A, a second insulating material 132A, a dielectric window 14, two high-frequency current supply blocks 1511, 1512, and an airtight holding part 16. The configurations of the antenna fixing frame 12, the dielectric window 14, and the airtight holding portion 16 are the same as those of the first embodiment.

The first insulating material 131A is placed on the dielectric window 14 and has a frame-like shape that cuts through the center of the insulating plate, and the antenna 11A and the second insulating material 132A are arranged in the frame.

The antenna 11A is a planar antenna composed of a flexible metal sheet with a thickness of 500 μm. As such a sheet, a metal foil made of copper, aluminum, or the like is suitably used.

The second insulating material 132A is composed of a substantially rectangular parallelepiped insulator. The bottom surface 1323 of the second insulating material 132A, two opposite side surfaces 1322, 1324 of the four side surfaces, and a partial area 1321, 1325 of the upper surface contacting the two side surfaces 1322, 1324, respectively, are in contact with the antenna 11A. In other words, the antenna 11A is arranged in such a way that it is wound around the side 1322, the bottom 1323, the other side 1324, and the upper surface in contact with the other side 1324 from a part of the area 1321 of the upper surface in contact with the one side 1322. Part of the area 1325. In this state, with the bottom surface 1323 of the second insulating material 132A as the lower side, the antenna 11A and the second insulating material 132A are arranged in the frame of the first insulating material 131A as described above. Therefore, in the antenna 11A, the part wound around the bottom surface 1323 of the second insulating material 132A faces the dielectric window 14, and the part wound around the side faces 1322 and 1324 of the second insulating material 132A faces the first insulating material 131A and the outside Antenna fixing frame 12.

A gap is provided between the first insulating material 131A and the antenna 11A, and between the antenna 11A and the dielectric window 14 on the lower side, and the gap is filled with a dielectric and made of resin, namely silicone grease.的adhesive 134. Compared with the case where the first insulating material 131A is in direct contact with the antenna 11A, and the antenna 11A and the dielectric window 14, the adhesive 134 makes the thermal contact, etc., better.

On the first insulating material 131A, two high-frequency current supply blocks 1511 and 1512 are fixed by bolts 154. Therefore, the first insulating material 131A and the second insulating material 132A are connected through the high-frequency current supply blocks 1511 and 1512.

The side of the first insulating material 131A is surrounded by the frame body portion 121 of the antenna fixing frame 12, and a part of the upper surface of the first insulating material 131A contacts the protruding portion 122 of the antenna fixing frame 12. The first insulating material 131A, the dielectric window 14, and the airtight holding portion 16 are sandwiched by the protrusion 122 and the upper surface of the wall 211 of the vacuum container 21 in the state where the three components overlap, and the frame body portion 121 is fixed to the wall 211 with bolts 123, whereby these three components are also fixed. Sealing materials (O-rings) 161 are respectively provided between the dielectric window 14 and the airtight holding portion 16 and between the airtight holding portion 16 and the upper surface of the wall 211 of the vacuum container 21.

The two high-frequency current supply blocks 1511 and 1512 are all metal blocks, one of which is connected to one electrode of the high-frequency power supply 26, and the other is connected to the other electrode of the high-frequency power supply 26 (not shown in Figure 5) Illustration of high-frequency power supply 26). A high-frequency current supply block 1511 is located in the above-mentioned area 1321 on the upper surface of the second insulating material 132A, and the antenna 11A is pressed against the second insulating material 132A to thereby be fixed; another high-frequency current supply block 1512 is located in the above-mentioned area 1325 , The antenna 11A is pressed against the second insulating material 132A, thereby fixing it. The high-frequency current supply blocks 1511 and 1512 are in contact with the upper surface of the second insulating material 132A except for the areas where the antennas 11A are located, and are fixed to the second insulating material 132A by bolts 153.

(4) Operation of the plasma source of the second embodiment The plasma processing device provided with the plasma source 10A of the second embodiment uses the same method as the plasma processing device 1 of the first embodiment to hold the substrate S in the substrate holding portion 24 so that the inner space of the vacuum container 21 After 212 is vacuumed, the plasma generation gas and the film-forming source gas are supplied to the internal space 212 of the vacuum vessel 21 from the gas supply unit 23, and a high-frequency current is introduced from the high-frequency power supply 26 to the antenna 11A. Thereby, a high-frequency electromagnetic field is generated in the inner space 212 of the vacuum container 21, and the molecules of the plasma-generating gas are dissociated by the high-frequency electromagnetic field, thereby generating plasma. Then, the molecules of the film-forming source gas decomposed by the plasma are deposited on the substrate S, thereby forming a film. The generation of the high-frequency electromagnetic field in the internal space 212 of the vacuum container 21 is mainly contributed by the portion of the antenna 11A facing the internal space 212 and wound around the bottom surface 1323 of the second insulating material 132A. Therefore, this part can be understood as a planar antenna.

During film formation, the heat generated from the antenna 11A due to the flow of high-frequency current flows into the first insulating material 131A through the second insulating material 132A and the high-frequency current supply blocks 1511 and 1512, as shown by the arrow in FIG. , The other part flows into the first insulating material 131A through the high-frequency current supply blocks 1511 and 1512 (not through the second insulating material 132A), and the other part flows into the first insulating material 131A through the adhesive 134. In this way, the heat that has flowed into the first insulating material 131A in a plurality of ways passes through the antenna fixing frame 12 and flows into the wall 211 of the vacuum container 21. As described above, the wall 211 of the vacuum container 21 has a sufficiently large heat capacity, and it also generates heat when in contact with the atmosphere, so that the heat can be sufficiently dissipated from the antenna 11A, and the antenna 11A can be cooled. Here, the antenna 11A is surrounded by the antenna fixing frame 12, so the heat generated by the antenna 11A can be efficiently discharged to the antenna fixing frame 12. In addition, in this embodiment, the part of the antenna 11A wound around the side surfaces 1322 and 1324 of the second insulating material 132A faces the antenna fixing frame 12. Therefore, the efficiency of letting the heat of the antenna 11A flow out to the antenna fixing frame 12 can be further improved. . Furthermore, the heat of the antenna 11A may be dissipated into the atmosphere through the second insulating material 132A.

The plasma source 10A of the second embodiment, like the first embodiment, does not need to use a cooling mechanism for cooling the antenna 11A by flowing a refrigerant. Therefore, the initial cost and operating cost of the device can be suppressed.

Hereinafter, in order to confirm the cooling efficiency of the antenna and the like in the plasma source of the second embodiment, the results of the following experiment are described: temperature sensors are attached to the antenna 11A, the first insulating material 131A, and the second insulating material, respectively. 132A and each part of the dielectric window 14 measure the temperature change of each part during plasma generation. In addition, experiments were also conducted on an example where the gap-filling adhesive 134 (keeping the gap) between the antenna 11A and the first insulating material 131A, and the antenna 11A and the dielectric window 14 was not provided. Here, the size of the gap is set to 2 mm, the adhesive 134 is set to silicone grease, the pressure of the plasma generating gas that is argon gas is set to 1.0 Pa, and the flow rate of the argon gas is set to 10 sccm, the high-frequency power input to the antenna 11A is set to 500 W. The temperature of each part was measured immediately after the plasma lighting started (0 minutes), and after 5 minutes, 10 minutes, 15 minutes, and 30 minutes.

The measurement results are shown in Fig. 7. Comparing the gap filled with the adhesive 134 with the unfilled case, it is found that there is no significant temperature difference between the first insulating material 131A and the second insulating material 132A, the antenna 11A and the dielectric window 14 shows a remarkable temperature suppression effect when the adhesive 134 is filled.

The plasma source of the present invention is not limited to the above-mentioned embodiment, and can be modified within the scope of the gist of the present invention.

1: Plasma processing device 10,10A: Plasma source 11, 11A: Antenna 110: layered body 12: Antenna fixing frame 121: Frame body 122: protruding part 123: Bolt 13: Insulating material 131A: The first insulating material 132A: 2nd insulating material 1321, 1325: part of the area 1322, 1324: side 1323: bottom 134: Adhesive 14: Dielectric window 15: High-frequency current supply strip 151: Feeder terminal 1511, 1512: high frequency current supply block 152: Feeder 153: Bolt 154: Bolt 16: airtight keeping part 161: Sealing material 21: Vacuum container 211: Wall 212: Internal Space 213: open 22: Vacuum pump 23: Gas supply department 24: base holding part 25: The substrate is moved in and out 251: cover member 26: high frequency power supply 27: Impedance matcher S: matrix

[Fig. 1] Fig. (a) is a schematic configuration diagram of a plasma processing apparatus according to a first embodiment including the plasma source of the present invention, and Fig. (b) is a partial enlarged view of the plasma source and its surroundings. [Fig. 2] Fig. 2 is a diagram showing the flow of heat in the plasma source of the first embodiment with arrows. [Fig. 3] Fig. 3 is a diagram showing the flow of current in the antenna in the plasma source of the first embodiment with arrows. [Fig. 4] Fig. 4 is a graph showing the electron density of plasma generated by the plasma source of the first embodiment and the plasma source using the antenna composed of a conventional conductive tube. Fig. 5 is a schematic configuration diagram showing a second embodiment of the plasma source of the present invention. [Fig. 6] Fig. 6 is a diagram showing the flow of heat in the plasma source of the second embodiment with arrows. [Fig. 7] shows the measurement of the temperature of the antenna (a), the first insulating material (b), the second insulating material (c), and the dielectric window (d) when the plasma source of the second embodiment generates plasma A graph of the result of the change.

1: Plasma processing device

10: Plasma source

11: Antenna

12: Antenna fixing frame

13: Insulating material

14: Insulating material

15: High-frequency current supply strip

16: airtight keeping part

21: Vacuum container

22: Vacuum pump

23: Gas supply department

24: base holding part

25: The substrate is moved in and out

26: high frequency power supply

27: Impedance matcher

110: layered body

121: Frame body

122: protruding part

123: Bolt

151: Feeder terminal

152: Feeder

161: Sealing material

211: Wall

212: Internal Space

213: open

251: cover member

S: matrix

Claims (10)

A plasma source, which is a device that generates plasma in a vacuum container, and includes: a) A frame provided on the wall of the above-mentioned vacuum container, and b) A planar antenna fixed in the above frame. The plasma source of claim 1, wherein the material of the above-mentioned frame is metal. The plasma source of claim 1 or 2, wherein the frame and the antenna are provided on a cover member that closes the opening of the vacuum container. The plasma source according to claim 3, further provided with a dielectric window, which is a plate material of a dielectric system, and is arranged on the opening side of the antenna. The plasma source according to claim 4, further comprising a vacuum seal arranged between the wall around the opening and the dielectric window. The plasma source of claim 4 is filled with a dielectric adhesive agent between the antenna and the dielectric window. The plasma source of claim 4, wherein the thickness of the above-mentioned dielectric window is 5 mm or less. The plasma source according to claim 3, further comprising an insulator plate, which is an insulator plate material, is arranged on the opposite side of the opening of the antenna and is in contact with the frame. The plasma source of claim 8 is filled with a dielectric adhesive agent between the antenna and the insulator plate. The plasma source of claim 1 or 2, wherein the thickness of the antenna is 1 to 1000 μm.

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