TW202115818A - Chip transferring method and apparatus - Google Patents

Abstract

Provided are a chip transferring method including preparing a transferring substrate, on which a plurality of chips are provided, on a transferred substrate, emitting a line beam, shaping a plurality of pattern beams from the line beam by using a mask provided on a path of the line beam, separating the plurality of chips from the transferring substrate by irradiating the pattern beams to the transferring substrate, and seating the plurality of chips separated from the transferring substrate on the transferred substrate, and a chip transferring apparatus using the same. The chip transferring method and apparatus are capable of transferring a plurality of chips at a predetermined position on the transferred substrate by using the mask having a pattern.

Description

Chip transfer method and device

The present disclosure relates to a wafer transfer method and a wafer transfer device, and more specifically, to a preset that can transfer a plurality of wafers to a substrate to be transferred by using a mask with a pattern. A wafer transfer method and a wafer transfer device at a location.

A micro light emitting diode (micro LED) display device is a display device in which all the pixels constituting the screen are formed by micro LED chips. Micro LED display devices have been researched and developed as a new generation of display devices, which consume less power than liquid crystal display (LCD) devices, have excellent durability, higher emission efficiency, and flexibility, and are available on a large scale. , Lightweight and miniaturization are advantageous.

The manufacturing process of the micro LED display device includes the EPI process, the wafer process, the transfer process, and the bonding process. For example, the transfer process among the processes described above is a process of forming pixels by transferring a plurality of micro LED chips on a substrate on which various wires and thin film transistors are formed.

For example, a transfer substrate is prepared on a wafer in which a micro LED chip is manufactured, and then the micro LED chip is attached to the transfer substrate and separated from the wafer. Thereafter, the transfer substrate is placed on the transferred substrate in which various wires and thin film transistors are formed, and then the micro LED chip is separated from the transfer substrate and transferred to a preset on the transferred substrate position.

Micro LED chips have an extremely small size of 100 microns or less and are therefore difficult to handle. Therefore, it is extremely difficult to transfer the micro LED chip in a single chip unit (for example, a unit) from the transferred substrate to the transferred substrate.

The background art of the present disclosure is disclosed in the following patent documents. [Existing Technology File] [Patent Literature] (Patent Document 1) KR10-2019-0072196 A

The present disclosure provides a wafer transfer device and a wafer transfer method, which can transfer a plurality of wafers to a predetermined position on a transferred substrate at a time by using a mask with a pattern.

According to an exemplary embodiment, a wafer transfer method includes: preparing a transfer substrate having a plurality of wafers disposed thereon on a substrate to be transferred (hereinafter referred to as a transferred substrate); emitting a line beam; The mask on the path of the line beam shapes a plurality of pattern beams from the line beam; separates the plurality of wafers from the transfer substrate by irradiating the pattern beam to the transfer substrate; and separates the plurality of wafers from the transfer substrate Multiple wafers are placed on the substrate to be transferred.

In an exemplary embodiment, the separation of the plurality of wafers may include irradiating the plurality of pattern beams to the plurality of wafers to be separated from the transfer substrate in a corresponding manner.

In an exemplary embodiment, the wafer transfer method may further include replacing the pattern by changing the position of the mask so that by transmitting the line beam through the plurality of patterns formed in the mask, one of the patterns corresponding to the plurality of wafers Each of the size of the pattern is used to shape the line beam into a pattern beam.

In an exemplary embodiment, the wafer transfer method may further include: shaping the marking beam from the line beam by using a mask on the path of the line beam; irradiating the marking beam onto the transfer substrate and photographing the moving substrate. The marking beam on the substrate is used to generate a marking beam image; and the marking beam image is used to align the position of the mask for the first time with respect to the transfer substrate.

In an exemplary embodiment, the shaping of the pattern beam and the shaping of the marking beam may be simultaneously performed by using the same line beam. Here, the marking beam can be shaped from one part of the line beam, and the pattern beam can be shaped from the remaining part of the line beam.

In an exemplary embodiment, the wafer transfer method may further include: irradiating the patterned light beam to the transferring substrate and generating a patterned beam image by photographing the patterned beam transmitted through the transferring substrate; and comparing the patterned beam image by using the patterned beam image. The inclination and distance of the mask screen are aligned for the second time on the transfer substrate, so as to focus the pattern beam transmitted through the mask screen and irradiated to the transfer substrate.

In an exemplary embodiment, the shaping of the marking beam may include performing a pair of alignment marks among a plurality of alignment marks formed at each of the two sides of the plurality of patterns by transmitting the line beam through a pair of alignment marks. A pair of marking beams are formed at both sides of the pattern beam, and the pair of alignment marks are formed at both sides of a pattern having a size corresponding to a plurality of wafers.

In an exemplary embodiment, the generation of the marking beam image may include: photographing a pair of alignment marks formed on the transfer substrate by a pair of marking beams irradiated to the transfer substrate from top to bottom; and inserting a reference mark In the image, the image is obtained by photographing the alignment mark with reference to the coordinates of the reference mark displayed on the transfer substrate corresponding to the marking beam.

In an exemplary embodiment, the initial alignment may include: calculating the offset of the alignment mark relative to the reference mark from the mark beam image; and adjusting the position and inclination of the mask in a direction intersecting the traveling direction of the line beam Adjust as much as the offset so that the alignment mark coincides with the reference mark.

In an exemplary embodiment, the generation of the pattern beam may include photographing a focused image of the plurality of pattern beams while scanning the transfer substrate in an arrangement direction of the plurality of pattern beams transmitted through the transfer substrate from top to bottom.

In an exemplary embodiment, the secondary alignment may include: collecting the characteristics of the pattern beam from the focused image and comparing the collected characteristics with the reference characteristics; and adjusting the position and inclination of the mask in the traveling direction of the line beam , So that the collected characteristics are consistent with the reference characteristics.

According to another exemplary embodiment, a wafer transfer device for transferring a plurality of wafers from a transfer substrate to a transferred substrate includes: having a plurality of pattern beams for shaping a line beam to be irradiated to the transfer substrate A mask with a pattern of a mask; a mask support configured to support the mask in a movable and rotatable manner; and a laser source unit configured to emit a line beam toward the mask to transfer multiple wafers.

In an exemplary embodiment, a plurality of different patterns may be formed in the mask, and one of the plurality of patterns may have a size corresponding to each of the plurality of wafers.

In an exemplary embodiment, the wafer transfer device may further include a pattern replacement unit configured to change the position of the mask by controlling the mask support so that the line beam is transmitted through the plurality of patterns having a pattern corresponding to the attachment A pattern of the size of multiple wafers to the transfer substrate.

In an exemplary embodiment, each of the plurality of patterns may include a plurality of pattern holes. Here, the pattern holes arranged on the same line in the width direction of the line beam may have the same shape, size, and arrangement as each other, and the pattern holes arranged in the direction crossing the width direction of the line beam may have shapes different from each other, Size and layout.

In an exemplary embodiment, a plurality of alignment marks may be formed on both sides of the plurality of patterns in the width direction of the line beam; the plurality of alignment marks may be arranged in the same line as the plurality of patterns in the width direction of the line beam, respectively. And can be transmitted through a plurality of pattern beams having a pattern corresponding to the size of the plurality of micro LED chips and transmitted through a pair of pairs disposed on both sides of the pattern corresponding to the size of the plurality of micro LED chips A pair of marking beams of quasi-marking are simultaneously irradiated to the transfer substrate.

In an exemplary embodiment, the wafer transfer apparatus may further include: a first alignment monitoring unit configured to generate a marking beam image by photographing the marking beam irradiated to the transfer substrate; and a first alignment adjustment unit, which It is configured to change the position and inclination of the mask in the direction intersecting the traveling direction of the line beam by controlling the mask support to be consistent with the reference mark displayed on the transfer substrate, so that the illuminating from top to bottom The pair of marking beams of the transfer substrate forms a pair of alignment marks in the transfer substrate corresponding to the marking beams.

In an exemplary embodiment, the wafer transfer apparatus may further include: a second alignment monitoring unit configured to generate a marking beam image by capturing a focused image of the pattern beam transmitted through the transfer substrate; and second An alignment adjustment unit configured to change the position and inclination of the mask in a direction crossing the traveling direction of the line beam by controlling the mask support, so that the characteristic of the pattern beam is consistent with the reference characteristic, the characteristic being A focused image of a plurality of patterned light beams transmitted through the transfer substrate from top to bottom is collected.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention may be implemented in different forms, and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and these embodiments will fully convey the scope of the present invention to those skilled in the art. In the drawings, the sizes of layers and regions are exaggerated for clarity of description. Throughout the text, the same reference numerals refer to the same elements.

The wafer transfer method and the wafer transfer device according to the exemplary embodiment exhibit a technical feature of transferring a plurality of wafers at one time to an arrangement position on a substrate to be transferred by using a mask with a pattern.

In addition, the wafer transfer method and the wafer transfer apparatus according to the exemplary embodiment exhibit a technical feature of transferring a plurality of wafers having different sizes to a substrate by using a mask having a plurality of patterns.

The wafer transfer method and wafer transfer device according to the exemplary embodiment may be used in a process of transferring micro LED chips by using a laser beam.

In addition, the wafer transfer method and the wafer transfer apparatus according to the exemplary embodiments may be used in various processes of transferring various electronic devices from a sacrificial substrate to a target substrate by using a laser beam.

Hereinafter, the wafer transfer method and wafer transfer apparatus according to exemplary embodiments will be described in detail with reference to the micro LED wafer transfer process.

FIG. 1 is a schematic diagram showing a wafer transfer apparatus according to an exemplary embodiment, and FIG. 2 is a schematic diagram showing a mask having a plurality of patterns formed therein according to an exemplary embodiment. In addition, FIGS. 3 to 7 are flow views of a micro LED wafer transfer process by using a wafer transfer method and a wafer transfer device according to an exemplary embodiment.

Referring to FIGS. 1 to 7, a wafer transfer apparatus according to an exemplary embodiment will be described. Here, the wafer transfer device may be referred to as a micro LED wafer transfer device.

The wafer transfer device according to the exemplary embodiment transfers a plurality of wafers (for example, a plurality of micro LED chips 1) from a transfer substrate S′ to a substrate to be transferred (hereinafter referred to as a transferred substrate). The wafer transfer device includes: a mask 10 having a pattern P to shape the line beam L into a pattern beam L'and irradiate the pattern beam L'to the transfer substrate S'; and support the mask 10 so that it can move and rotate The mask support 20; and the laser source unit 30 that emits a line beam L toward the mask 10 to transfer a plurality of micro LED chips 1. In addition, the wafer transfer device may include a mirror unit 40 that reflects a plurality of pattern beams L′ that are shaped when passing through the mask 10 to the transfer substrate S′.

Here, a plurality of patterns P having different sizes may be formed in the mask 10. More specifically, a plurality of patterns P having different shapes, sizes, and arrangements may be formed in the mask 10. In addition, one of the plurality of patterns P may have a size corresponding to each of the plurality of micro LED chips 1. Here, the feature corresponding to the size indicates that the size of a micro LED chip 1 is consistent with the size of a patterned light beam L′ within a predetermined tolerance value. Here, within a predetermined tolerance value, the size of a patterned beam can be larger than the size of a micro LED chip 1. Here, the tolerance value may be referred to as tolerance or tolerance.

In addition, one of the plurality of patterns P may have a shape and arrangement consistent with each of the plurality of micro LED chips 1.

In addition, the wafer transfer device may further include a pattern replacement unit 50, which changes the position of the mask 10 by controlling the mask support 20, so that the line beam L passes through the plurality of patterns P having a pattern corresponding to the attachment to the transfer A pattern of the size of a plurality of micro LED chips 1 on the substrate S′.

The chip may be a micro LED chip 1. Alternatively, the chip may include various electronic device chips other than the micro LED chip 1.

The micro LED chip 1 can be manufactured by growing a thin film made of inorganic materials such as Al, Ga, N, P, As, and In on a sapphire or silicon substrate. The micro LED chip 1 may have a size of, for example, 10 micrometers to 100 micrometers. The micro LED chip 1 may include blue, green and red micro LED chips. The fully manufactured micro LED chip 1 can be separated from the sapphire or silicon substrate, and then attached to the transfer substrate S'. On the other hand, the micro LED chip 1 can be directly manufactured by growing a thin film made of inorganic materials such as Al, Ga, N, P, As, and In on the transfer substrate S′.

The transfer substrate S′ may be a chip on which a plurality of micro LED chips 1 are attached in an array type. Alternatively, a plurality of micro LED chips 1 may be directly grown on the transfer substrate S′. The transfer substrate S'may be referred to as a temporary substrate.

Hereinafter, for the convenience of description, the transferred substrate may be simply referred to as substrate S.

The substrate S may be glass. Various wires and thin film transistors can be formed on the substrate S. The blue, green, and red micro LED chips can be transferred from the transfer substrate S′ to the pixel area of the substrate S by using a wafer transfer device. Alternatively, the substrate S may have different types and materials. In addition, the substrate S may be referred to as a target substrate. Each of the substrate S and various wires and thin film transistors formed on the substrate S may be made of, for example, a transparent material.

The transfer substrate S′ can be supported by a first platform (not shown), and the substrate S can be supported by a second platform (not shown). The first and second platforms can be accommodated in a chamber (not shown) and face each other in the vertical direction Y.

The first platform may have, for example, a rectangular plate shape or a circular plate shape and includes an opening defined at a central portion thereof. The area of the first platform may be larger than the area of the transfer substrate S′, and the area of the opening may be smaller than the area of the transfer substrate S′.

The adsorber (not shown) can be arranged at the lower part of the first platform. The adsorber can be arranged around the opening. The transfer substrate S'can be adsorbed to the lower part of the first platform by the adsorber and supported by the first platform. Here, a portion of the top surface of the transfer substrate S′ may be exposed to the outside through the opening. Here, the patterned light beam L'can pass through the opening to irradiate the transfer substrate S'. Here, the first platform may have various shapes and various methods for supporting the transfer substrate S′.

The second platform can be placed under the first platform. The second platform can support the substrate S. The second platform may have, for example, a rectangular plate shape. The substrate S may be placed on and supported by the top surface of the second platform. The area of the top surface of the second platform may be greater than the area of the substrate S. The second platform may have various structures and shapes.

Since the transfer substrate S′ is placed on the first platform and the substrate S is placed on the second platform, the transfer substrate S′ and the substrate S can face each other in the vertical direction.

The wafer transfer device may further include first and second driving units (not shown). The first and second platforms can be moved and rotated individually by the first and second driving units. Therefore, the transfer substrate S′ and the substrate S may be aligned with each other in the vertical direction Y by using the first and second driving units to move the first and second platforms individually.

The first driving unit can move the first platform in the front-rear direction Z, the left-right direction X, and the vertical direction Y and rotate the first platform relative to the vertical direction Y. In addition, the second driving unit can move the second platform in the front-rear direction Z, the left-right direction X, and the vertical direction Y and rotate the second platform relative to the vertical direction Y. For this purpose, the first and second driving units may have various configurations and methods.

The mask 10 can be supported by the mask support 20 and arranged between the mirror unit 40 and the laser source unit 30. Therefore, the mask 10 can transmit the line beam L traveling from the laser source unit 30 to the mirror unit 40 through the pattern P defined in the mask 10 and shape the line beam L into the shape of the pattern P. The pattern light beam L′ molded into the shape of the pattern P may be reflected by the mirror unit 40 and irradiated to the transfer substrate S′.

The mask 10 may have a plate shape. The pattern P may be formed in the mask 10. The pattern P may include a plurality of pattern holes. A plurality of pattern holes can be arranged in the width direction of the line beam L to form a row, and the line beam L is transmitted through the plurality of pattern holes to form the shape of the pattern P.

Alternatively, a plurality of patterns P may be formed in the mask 10. The line beam L is transmitted through the plurality of patterns P to form a pattern shape. The plurality of patterns P may be arranged in the vertical direction Y.

The plurality of patterns P may be referred to as a plurality of row patterns P. Here, the plurality of rows r may include, for example, the first row r1, the second row r2, the third row r3, the fourth row r4, and the fifth row r5. A plurality of patterns P may be formed along each row, and include a first row pattern P1, a second row pattern P2, a third row pattern P3, a fourth row pattern P4, and a fifth row pattern P5. Alternatively, the number of rows may be set differently.

Each of the plurality of patterns P may include a plurality of pattern holes. A plurality of pattern holes arranged on the same line in the left-right direction Z may form one row to form one pattern P.

The plurality of pattern holes can transmit the line beam L therethrough to form the shape of the pattern holes. In other words, the part of the line beam L that reaches the mask screen 10 may pass through a plurality of pattern holes and be molded into the pattern beam L′, and the remaining part of the line beam L may not pass through the mask screen 10. Therefore, the pattern light beam L′ that has passed through the plurality of pattern holes may be irradiated to the transfer substrate S′ with the same pattern shape as the plurality of pattern holes.

The plurality of pattern holes forming one pattern P arranged on the same line in the width direction (for example, the left-right direction X) of the beam L on the line may have the same shape, size, and arrangement as each other. That is, the pattern holes forming the same row r each other may have the same shape, size, and arrangement as each other. Here, the arrangement means the left and right gaps between the pattern holes. As described above, pattern holes having the same shape, size, and arrangement in the left-right direction X may be arranged to form one line.

In addition, at least one of the shape, size, and arrangement of the pattern holes arranged in a direction crossing the width direction of the line beam L (for example, in the vertical direction Y) may be different. That is, when the rows r are different, at least one of the shape, size, and arrangement of the pattern holes may be different. For example, pattern holes having different shapes, sizes or arrangements may be arranged in the vertical direction Y.

That is, at least one of the shape, size, and arrangement of the pattern holes of the first row pattern P1 formed along the first row r1 and the pattern holes of the second row pattern P2 formed along the second row r2 is different. Similarly, at least one of the shape, size, and arrangement of the pattern holes of the first row pattern P1 and the pattern holes of the third row pattern P3 is different. That is, at least one of the shape, size, and arrangement of the pattern holes of the pattern formed along each row r is different. Therefore, the mask 10 can shape as many pattern light beams L′ as the number of patterns P differently. That is, the shape, size, and arrangement of the pattern light beam L′ irradiated to the transfer substrate S′ can be determined by the shape, size, and arrangement of the pattern P transmitted through the line light beam L.

The plurality of alignment marks M may be formed at each of both sides of the plurality of patterns P in the width direction of the line beam L. For example, the plurality of alignment marks M may include a first alignment mark M1, a second alignment mark M2, a third alignment mark M3, a fourth alignment mark M4, and a fifth alignment mark M5. The alignment mark may be arranged on the same line with the plurality of patterns P in the width direction of the line beam.

For example, the alignment marks and patterns arranged on the first row may be arranged on the same line in the left-right direction X. Similarly, the alignment marks and patterns arranged on each row may be arranged on the same line in the left-right direction X. The alignment mark may be referred to as an alignment hole. The alignment mark may have a cross shape. Therefore, the marking light beam LM that is shaped while passing through the alignment mark can be displayed in a cross shape on the transfer substrate S′. Alternatively, the alignment mark may have various shapes.

The line beam L having a shape extending in the left-right direction X can be shaped into a plurality of pattern beams L′ and a plurality of marking beams LM when passing through the pattern hole and the alignment mark formed in one of the rows, and The shapes of multiple light spots illuminate the transfer substrate S'. Here, the shape and size of the pattern beam irradiated to the transfer substrate S′ can be determined by the shape and size of the pattern hole in the row through which the line beam L passes. In addition, the alignment state of the mask 10 and the transfer substrate S′ can be checked by observing the shape and position of the cross-shaped marking beam LM irradiated to the transfer substrate S′.

The screen support 20 can support the screen 10 in a movable and rotatable manner. For example, the screen support 20 can support the screen 10 to move in the left-right direction X, the front-rear direction Z, and the vertical direction Y. Here, the mask support 20 may support the mask 10 so that the four corners (ie, upper, lower, left, and right corners) of the mask 10 move different distances in the front-rear direction Z. In addition, the mask support 20 can support the rotation of the mask 10 with respect to the front-rear direction Z.

The mask support 20 may be upwardly spaced from the first platform on which the transfer substrate S′ is supported, and is arranged between the laser source unit 30 and the mirror unit 40. The mask support 20 may have a predetermined area by extending in the vertical direction Y and the left-right direction X, and have a predetermined thickness in the front-rear direction Z. For example, the mask support 20 may have a rectangular plate shape with an open center portion. Alternatively, the mask support 20 may have various shapes. The screen support 20 is used to support the screen 10.

The mask support 20 can support the periphery of the mask 10. The plurality of patterns P and the alignment marks M defined in the central portion of the mask 10 may be exposed to the laser source unit 30 through the opening at the central portion of the mask support 20.

A driving body (not shown) may be provided to the screen support 20. The driving body may include at least one of a front and rear driving body (not shown), a left and right driving body (not shown), a vertical driving body (not shown), and a rotation driving body (not shown). The mask 10 can be supported by a driving body. The mask support 20 can adjust the position and inclination of the mask in multiple directions by using a driving body.

The mask support 20 may change the position of the mask 10 so that the line beam L passes through a pattern P corresponding to the size, shape, and arrangement of the micro LED chip 1 attached to the transfer substrate S′. That is, the mask support 20 can move and rotate the mask in a plurality of directions to select the pattern P through which the line beam L is transmitted among the plurality of patterns P. Therefore, the mask 10 can transmit the line beam L through the patterns in one row corresponding to the shape, size, and arrangement of the plurality of micro LED chips 1 attached to the transfer substrate S′ among the plurality of patterns P. Therefore, the shape, size, and arrangement of the pattern light beam L′ irradiated to the transfer substrate S′ can be selected corresponding to the shape, size, and arrangement of the micro LED chip 1.

The laser source unit 30 may be spaced apart from the mask 10 in the front-rear direction Z, for example, and emit the laser beam toward the mask 10 in the form of a line beam L, for example. The line beam L may extend in the left-right direction X and be emitted in the front-rear direction Z. The laser source unit 30 may have various laser sources.

The mirror unit 40 may be spaced upward from the transfer substrate S′ and face the mask in the front-rear direction Z. The mirror unit 40 can reflect a plurality of pattern light beams L′ to the transfer substrate S′, and the pattern light beams L′ are shaped when passing through the mask 10. The mirror unit 40 may be inclined by 45° with respect to the traveling direction of the pattern light beam L′.

The mirror unit 40 may reflect a plurality of pattern light beams L′ transmitted through a pattern and a pair of mark light beams LM transmitted through a pair of alignment marks to the transfer substrate S′, the pattern having a pattern corresponding to the plurality of micro LEDs The size of the wafer, the pair of alignment marks are arranged at both sides of a pattern having a size corresponding to the size of the plurality of micro LED wafers. Therefore, a plurality of pattern beams L'and a pair of marking beams LM can be irradiated to the transfer substrate S'at the same time.

The pattern beam L′ and the marking beam LM may travel in the front-rear direction Z between the mask 10 and the mirror unit 40, and are reflected downward by the mirror unit 40 to travel in the vertical direction toward the transfer substrate S′.

The pattern replacement unit 50 can change the position of the mask 10 by controlling the mask support 20, so that the line beam L passes through the plurality of patterns P, which corresponds to the plurality of micro LED chips attached to the transfer substrate S′ 1 size pattern.

The pattern replacement unit 50 can change the position of the mask 10 through the following operations: receiving the size of the micro LED chip 1 attached to the transfer substrate S'from the program controller (not shown) that executes the process of transferring the micro LED chip, Information on the shape and arrangement; selecting a pattern corresponding to the received size, shape, and arrangement of the micro LED chip; and controlling the mask support 20 to transmit the line beam L through the selected pattern.

The micro LED wafer transfer apparatus according to an exemplary embodiment may include a first alignment monitoring unit 60, a first alignment adjustment unit 70, a second alignment monitoring unit 80, and a second alignment adjustment unit 90.

The first alignment monitoring unit 60 may be an optical camera. The first alignment monitoring unit 60 may be arranged in a plurality of units and arranged above the transfer substrate S′. The first alignment monitoring unit 60 can photograph the marking light beam LM irradiated to the transfer substrate S′ and generate an image of the marking light beam. The first alignment monitoring unit 60 can be used to check the position and shape of the marking beam LM irradiated to the transfer substrate S′.

The first alignment adjustment unit 70 can change the position and tilt of the mask in a direction crossing the traveling direction of the line beam L by controlling the mask support 20 to be consistent with the reference mark marked on the transfer substrate S′. The degree is so that a pair of alignment marks formed on the transfer substrate S′ by a pair of marking light beams LM irradiated from top to bottom to the transfer substrate S′ corresponds to the marking light beam LM. The first alignment adjustment unit 70 can adjust the mask 10 by receiving the marking beam image from the first alignment monitoring unit 60 and controlling the mask support 20 according to the position and shape of the alignment mark displayed in the marking beam image.的Alignment status.

Since the position of the alignment mark and the position of the reference mark on the transfer substrate S'are checked by using the first alignment monitoring unit 60 and the first alignment adjustment unit 70, the alignment state of the mask 10 is adjusted to The alignment mark is moved to the position of the reference mark, so the position of the mask 10 can be aligned for the first time with respect to the transfer base S′.

The second alignment monitoring unit 80 may be a beam profile camera. The second alignment monitoring unit 80 may be movably installed under the substrate S. The second alignment monitoring unit 80 may generate a patterned beam image by shooting a focused image of the patterned beam L′ transmitted through the transfer substrate S′. The second alignment monitoring unit 80 can be used to check the focal shape and characteristics of the pattern beam L′ irradiated on the transfer substrate S′. Here, the characteristics of the pattern light beam L′ may include the contrast and energy distribution curve of the focus of the pattern light beam L′. Here, the energy density and uniformity of the pattern light beam L'can be checked from the energy distribution curve, and the visibility can be checked from the contrast of the pattern light beam L'.

The second alignment adjustment unit 90 can change the position and inclination in the traveling direction of the light beam L on the mask 10 line by controlling the mask support 20 so that the characteristics of the pattern beam are consistent with the reference characteristics, and the characteristics of the pattern beam are The focused images of a plurality of pattern light beams L′ transmitted through the transfer substrate S′ from top to bottom are collected. For this purpose, the second alignment adjustment unit 90 may receive the pattern beam image from the second alignment monitoring unit 80 and adjust the alignment state of the mask 10 by controlling the mask support 20 so that the pattern beam image At least one of the energy distribution curve and the contrast of the checked pattern beam is consistent with at least one of the reference energy distribution curve and the reference contrast.

Since the alignment state of the mask 10 is adjusted so that the energy distribution curve of the pattern beam is consistent with the reference energy distribution curve, and the second alignment monitoring unit 80 and the second alignment adjustment unit 90 are used to check the irradiation on the transfer substrate S' The state of the upper pattern light beam L′ makes the contrast of the pattern light beam consistent with the reference contrast, so the position of the mask 10 can be aligned twice with respect to the transfer substrate S′. Therefore, the distortion of the pattern light beam L'can be avoided.

When aligning the position of the mask 10 with respect to the transfer substrate S', the pattern beam L'can just irradiate the attachment surface between the transfer substrate S'and the micro LED chip 1 attached to the transfer substrate S' , And the micro LED chip 1 can be smoothly separated from the transfer substrate S'and fall to the desired position.

As described above, the wafer transfer apparatus according to the exemplary embodiment may transfer a plurality of wafers to a predetermined position of the transferred substrate at a time by using a mask having a pattern.

In other words, since a mask with a pattern is used, the micro LED chip can be transferred in a pattern unit.

In addition, the wafer transfer device according to the exemplary embodiment may transfer micro LED wafers having multiple sizes to a predetermined position of the transferred substrate by using a mask having multiple patterns. More specifically, according to an exemplary embodiment, a micro LED chip having a desired size among a plurality of sizes can be simply transferred to a predetermined position of the transferred substrate by using one mask having a plurality of different patterns.

That is, the micro LED chips having various sizes can be simply transferred to a predetermined position of the transferred substrate, so that although the size of the micro LED chips is changed with the change of the production model, the mask is simply moved to The pattern through which the laser beam passes is replaced instead of being replaced, and by adjusting the size, shape, and gap of a plurality of pattern beams transmitted through a pattern corresponding to the changed size of the micro LED chip to irradiate the transfer substrate and the plurality of micro The attachment surface between the LED chips.

Therefore, the time for replacing the mask can be saved to shorten the process time, the workload of the staff due to the replacement of the mask can be reduced, and the alignment defects during the replacement of the mask can be basically avoided to ensure a stable mine. Beam quality. Therefore, the productivity of the micro LED chip transfer process can be improved.

FIG. 8 is a flowchart of a wafer transfer method according to an exemplary embodiment.

Hereinafter, a wafer transfer method according to an exemplary embodiment will be described.

A wafer transfer method according to an exemplary embodiment includes: preparing a transfer substrate S′ on which a plurality of wafers (for example, a plurality of micro LED wafers 1) are disposed on a transferred substrate (hereinafter referred to as a substrate S); Emit a line beam L; shape a plurality of pattern beams L'from the line beam L by using the mask 10 on the path of the line beam L; irradiate the pattern beam L'to the transfer substrate S'to irradiate a plurality of micro LEDs The wafer 1 is separated from the transfer substrate S′; and a plurality of wafers separated from the transfer substrate S′ are placed on the substrate S.

In addition, the wafer transfer method according to the exemplary embodiment may further include between the preparation of the transfer substrate S′ on the substrate S and the emission of the line beam L, replacing the pattern to change the position of the mask 10 so that the The line beam L is transmitted through a pattern having a size corresponding to each of the plurality of micro LED chips 1 among the plurality of patterns P being formed in the mask 10 to shape the line beam L into a pattern beam L′.

Here, the features corresponding to the sizes indicate that the sizes are consistent with each other within a predetermined tolerance value. For example, the size (or'area') of one micro LED chip 1 and the focus size of one pattern beam L'may be consistent with a predetermined tolerance (for example, tolerance). Here, the size of the pattern beam can be relatively large. Therefore, when the patterned light beam is irradiated to the attachment surface between the micro LED chip and the transfer substrate S′, the patterned light beam can be uniformly irradiated from the center portion of the attachment surface to the edge.

In addition, the wafer transfer method according to the exemplary embodiment may further include: between the emission of the in-line beam L and the separation of the plurality of micro LED chips 1, by using the mask 10 on the path of the in-line beam L to be separated from the line beam L Shaping the marking light beam LM; generating a marking light beam image by irradiating the marking light beam LM to the transfer substrate S'and photographing the marking light beam LM on the transfer substrate S'; and generating a marking beam image by using the marking beam image relative to the transfer The base S′ is aligned with the position of the mask 10 for the first time. Here, the shaping of the marking light beam LM and the shaping of the pattern light beam L′ can be simultaneously performed.

More specifically, by using the same linear light beam L, the shaping of the marking light beam LM and the shaping of the pattern light beam L′ can be simultaneously performed on the same line along the width direction of the linear light beam L.

In other words, the marking beam LM and the pattern beam L′ can be shaped from the same line beam L at the same time. Here, one part of the line beam L can be molded to form the marking beam LM, and the remaining part of the line beam L can be molded to form the pattern beam L′. That is, the marking light beam LM can be shaped from the two side edges of the line light beam L, and the pattern light beam L′ can be shaped from the remaining part of the line light beam L.

In addition, the wafer transfer method according to the exemplary embodiment may further include: between the initial alignment and the separation of the plurality of micro LED chips 1, by irradiating the patterned light beam L'to the transfer substrate S'and photographing the transmission through The pattern beam L'of the transfer substrate S'is used to generate a pattern beam image; and the pattern beam image is used to re-align the distance and inclination of the mask 10 with respect to the transfer substrate S'for focusing transmission The pattern beam passing through the mask 10 and irradiating the transfer substrate S'.

The wafer transfer method according to the exemplary embodiment can transfer a plurality of micro LED chips 1 from the transfer substrate S′ to the substrate S. The wafer transfer method according to the exemplary embodiment may be referred to as a micro LED wafer transfer method.

Step S100: First, referring to FIG. 1, a transfer substrate S′ on which a plurality of micro LED chips 1 are arranged is prepared on the substrate S. Here, a plurality of micro LED chips 1 can be manufactured on the transfer substrate S′. Alternatively, a plurality of micro LED chips 1 can be fabricated on a single sacrificial substrate and then attached to the transfer substrate S'.

The first and second platforms (not shown) facing each other in the vertical direction Y can be prepared, the transfer substrate S'can be supported by the bottom surface of the first platform, and the substrate S can be placed on the top surface of the second platform . Here, the transfer substrate S′ and the substrate S can be aligned with each other by using the first and second driving units (not shown) to move and rotate each of the first and second platforms in multiple directions.

Here, a method for aligning the transfer substrate S′ and the substrate S with each other in the vertical direction Y may be provided differently. The feature that aligns the transfer substrate S′ and the substrate S with each other can be referred to as a substrate alignment process.

Step S200: Thereafter, the pattern is replaced by changing the position of the mask 10 so that the line beam L is transmitted through the plurality of patterns P formed in the mask 10 to have a size corresponding to the plurality of micro LED chips 1 The pattern is used to shape the line beam L into a pattern beam L'.

FIG. 3 is a flow chart of the micro LED chip transfer process in which the line beam L is transmitted through the features of the pattern formed in the third row r3. In addition, FIG. 4 is a flow diagram of the micro LED chip transfer process for moving the mask 10 to transmit the line beam L through the features of the pattern formed in the first row r1.

3 and 4, the line beam L can be transmitted through the pattern in one of the rows of the pattern P by moving the mask 10 in the vertical direction Y. Here, the alignment mask 10 with respect to the transfer base S′ may be distorted.

Step S300: emit a line beam L toward the transfer substrate S'. The line beam L can be emitted from the light source unit 30 toward the transfer substrate S', transmitted through the mask 10 and the mirror unit 40 disposed on the path between the laser source unit 30 and the transfer substrate S', and then irradiate To the transfer base S'.

Step S410: Shaping the marking light beam LM from the line light beam L by using the mask 10 on the path of the setting line light beam L. For example, by transmitting the line beam L through a pair of alignment marks among a plurality of alignment marks M formed at both sides of the plurality of patterns P, a pair of alignment marks are formed at both sides of the pattern beam L′, respectively. The marking light beam LM, and the pair of alignment marks are formed at both sides of a pattern whose size corresponds to the size of the plurality of micro LED chips 1. The pair of marking light beams LM are molded into the shape of an alignment mark, for example, a cross shape, and travel in the front-rear direction Z toward the mirror unit 40.

Step S420: Thereafter, a marking beam image is generated by irradiating the marking beam LM to the transfer substrate S'and photographing the marking beam LM on the transfer substrate S'. That is, a pair of marking light beams LM traveling in the front-rear direction Z toward the mirror unit 40 are reflected by the mirror unit 40 and travel to the transfer substrate S', and are irradiated from top to bottom to the transfer substrate S' The pair of alignment marks formed by the pair of marking beams LM on the transfer substrate S′ is photographed by the first alignment monitoring unit 60. Here, the reference mark pre-marked on the transfer substrate S′ can also be photographed in the mark beam image. Alternatively, the reference mark may be inserted into the captured alignment mark image with reference to the coordinates (0, 0) corresponding to the reference mark marked on the transfer substrate S′ by the marking light beam LM.

FIG. 5 is a flow chart of the micro LED chip transfer process for adjusting the characteristics of the position and inclination of the mask 10 during the initial alignment of the mask 10.

Step S430: After that, the position of the mask 10 is aligned for the first time with respect to the transfer base S′ by using the marking beam image. Specifically, the position and inclination of the mask 10 are adjusted by the following operations: the alignment mark relative to the reference mark is calculated from the mark beam image input from the first alignment monitoring unit 60 to the first alignment adjustment unit 70 The offset Δx, Δy and offset Δθ of Δx, Δy, and Δθ; the mask support 20 is controlled by the first alignment monitoring unit 60; and the mask 10 is crossed with the traveling direction of the line beam L (refer to FIGS. 4 and 5) Move and rotate in the vertical direction Y and the front-rear direction X as much as the offset. Here, the inclination indicates the inclination or rotation angle of the mask 10 with respect to the X-Z plane.

Thereafter, the marking beam image can be repeatedly generated and the initial alignment can be performed so that the alignment mark and the reference mark are consistent on the transfer substrate S'. Through the above-described manufacturing process, the initial alignment of the mask 10 can be completed, and the marking beam LM can be irradiated to a desired position on the transfer substrate S′. Therefore, the pattern light beam L′ placed between the marking light beams LM can also be irradiated to the desired position on the transfer substrate S′.

Step S510: Shaping a plurality of pattern beams L′ from the line beam L by using the mask 10 on the path of the setting line beam L. Here, this process can be performed in combination with the shaping of the marking beam LM from the line beam L described above. For example, the line beam L is emitted from the laser source unit 30 to the mask 10 and then is shaped into a pattern beam L′ when passing through the mask 10.

FIG. 6 is a micro-LED chip transfer process that illustrates the feature of capturing a focused image of the patterned light beam L'transmitted through the transfer substrate S'while scanning the transfer substrate S'by using the second alignment monitoring unit 80 View of the process.

Step S520: Thereafter, a pattern beam image is generated by irradiating the pattern beam L'to the transfer substrate S'and photographing the pattern beam L'transmitted through the transfer substrate S'. That is, the pattern light beam L′ transmitted through the mask 10 travels to the mirror unit 40 and is reflected by the mirror unit 40, and thus irradiates the transfer substrate S′. In addition, by using the second alignment monitoring unit 80 (refer to FIG. 6), the patterned light beam L'transmitted through the transfer substrate S'is photographed to form an attachment surface between the micro LED chip 1 and the transfer substrate S'. A focal point is formed on it to produce a patterned beam image.

Here, while scanning the transfer substrate S′ along the arrangement direction of the plurality of pattern light beams L′ transmitted through the transfer substrate S′ from top to bottom, a focused image of the plurality of pattern beams is captured. This process is performed between the initial alignment and the separation of multiple micro LED chips. That is, the pattern light beam image is generated by photographing the pattern light beam L′ transmitted through the mask 10 that is aligned for the first time.

FIG. 7 is a flow chart of the micro LED chip transfer process for adjusting the characteristics of the position and inclination of the mask 10 in the secondary alignment of the mask 10.

Step S530: After that, by using the second alignment adjustment unit 90, the inclination and distance of the mask 10 with respect to the transfer base S'are aligned twice by using the patterned beam image, so as to be used for focusing the irradiation to the transfer Turn the pattern beam L'on the substrate S'. That is, the characteristics of the pattern beam are collected from the focused image taken by the second alignment monitoring unit 80. The characteristics of the pattern light beam collected from the focused image may include at least one of the energy distribution curve and the contrast of the pattern light beam. Subsequently, by using the second alignment adjustment unit 90, the position of the mask 10 is adjusted in the traveling direction of the beam L on the line (for example, in the front-rear direction Z) by comparing the collected characteristics with the reference characteristics and controlling the mask support 20 And the inclination, so that the collected characteristics are consistent with the reference characteristics. Here, the position is the position in the front-rear direction Z, and the inclination is the inclination with respect to the X-Y plane.

Here, the four corners (ie, upper, lower, left, and right corners) of the mask 10 can be moved different distances ΔZ1 to distance ΔZ4 or the same distance in the front-rear direction Z, respectively (refer to FIG. 7). For example, when the mask 10 is pulled or pushed toward the laser source unit 30 in the front-rear direction Z, the pattern beam L'may have a clear focus, and here, the energy distribution curve may increase or increase along the pushing or pulling direction. Reduce to have the desired value.

Through the above-described process, the jitter of the focused image of the pattern beam L′ can be compensated, and the generation and secondary alignment of the pattern beam image described above can be repeated to compensate for the jitter of the focused image to reach a desired level. Therefore, the alignment between the mask 10 and the transfer substrate S'can be completed.

Step S600: Thereafter, when the pattern beam L'shaped while passing through the mask 10 for completing the primary and secondary alignment is irradiated to the transfer substrate S', thermal energy is applied to the transfer substrate S' The attachment surface between the micro LED chip 1 and the micro LED chip 1 is separated from the transfer substrate S'. Specifically, a plurality of patterned light beams can be simultaneously irradiated to a plurality of micro LED chips 1 separated from the transfer substrate S′ in a corresponding manner. Here, the feature of irradiating in a corresponding manner means irradiating one patterned light beam to one micro LED chip 1. In this manufacturing process, a plurality of micro LED chips 1 can be transferred to the substrate S at one time by pattern units, that is, the transferred substrate S.

Here, since the mask 10 is aligned with the transfer substrate S', and the transfer substrate S'is aligned with the substrate S, the plurality of micro LED chips 1 can be smoothly separated from the transfer substrate S', and In the manufacturing process that will be described later, the micro LED chip 1 can be placed on a position on the substrate.

Thereafter, each of the plurality of micro LED chips 1 separated from the transfer substrate S′ is accurately placed at a desired position on the substrate S. Here, by using the weight of the plurality of micro LED chips 1 separated from the transfer substrate S′, the plurality of the micro LED chips 1 fall downward from the transfer substrate S′. In this manufacturing process, the micro LED chip 1 can be transferred to the substrate S.

Here, a thin film layer (not shown) made of a bonding material may be disposed on the top surface of the substrate S, so that the chip attachment portion of the substrate S and the substrate attachment portion of the micro LED chip 1 are attached to each other and electrically connected. connection.

The thin film layer made of the bonding material may be an anisotropically conductive film (ACF). The film layer made of the bonding material may include a plurality of conductive particles distributed therein and have predetermined adhesive properties. The thin film layer made of the bonding material may be referred to as a conductive material layer or an anisotropic conductive film.

While the pattern beam L'scans the transfer substrate S'in the forward and backward directions, the separation of the wafer and the transfer of the separated wafer to the transferred substrate are repeated, and all the micro LED chips 1 are separated from the transfer substrate S' And when transferring from the transfer substrate S'to the substrate S, the next transfer substrate S'can be loaded on the first platform and the next transfer process can be performed.

Thereafter, when the pixel formation is completed by transferring the plurality of micro LED chips 1 to all desired positions of the substrate S (for example, the transferred substrate S), the substrate S can be moved to the next process position and The follow-up process can be performed.

The subsequent process may be a process of attaching and electrically connecting the micro LED chip 1 to a thin film layer made of a bonding material provided on the substrate S by applying heat to the attachment surface between the micro LED chip 1 and the substrate S .

As described above, in the wafer transfer process to which the wafer transfer method and device according to the exemplary embodiment are applied, although the size of the micro LED chip 1 on the transfer substrate S'changes with the change of the production model, Moving the mask 10 instead of replacing the mask 10 only changes the pattern position.

Specifically, the micro LED display device may include a micro LED chip, which constitutes a pixel having a size that changes according to a production model. Therefore, even when the production model of the micro LED display device produced in the process facility is changed, only the pattern position can be changed by moving the mask 10 instead of replacing the mask 10.

That is, according to the exemplary embodiment, since the production model is changed but the mask 10 is replaced unnecessarily, the staff does not have to stop the process facility and use a new mask with a pattern whose size corresponds to the size of the changed micro LED chip. The screen replaces the current mask, and the size, shape and gap of the laser pattern beam are re-adjusted. Therefore, the entire process time can be reduced.

In addition, according to the exemplary embodiment, since the primary and secondary alignments are sequentially performed after the pattern replacement, stable laser quality can be ensured. Therefore, the process of transferring micro LED chips can have improved productivity.

In addition, since the laser beam is processed into a plurality of laser pattern beams spaced apart from each other by transmitting the laser beam through the pattern P of the mask 10, and when the micro LED chip 1 is separated from the transfer substrate S' The multiple processed laser pattern beams L'are irradiated to the attachment surface between multiple micro LED chips and the transfer substrate, so multiple micro LED chips can be separated into one, and multiple micro LED chips 1 can be simultaneously It is transferred to a wide area on the substrate S to be transferred. Therefore, the processing speed can be increased.

According to an exemplary embodiment, a plurality of wafers may be transferred to a predetermined position on the transferred substrate at a time by using a mask having a pattern.

For example, when applied to a micro LED chip transfer process, when a micro LED chip with a size equal to or less than 100 microns is transferred from the transfer substrate to the transferred substrate, it can be transferred and used at once. A plurality of micro LED chips having the same number of pattern beams for pattern shaping.

Therefore, the process time can be reduced, and the productivity of the micro LED chip transfer process can be improved.

Although the deposition apparatus and method have been described with reference to specific embodiments, they are not limited thereto. Therefore, those skilled in the art will easily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention defined by the appended claims.

1: Micro LED chip 10: hood 20: Screen support 30: Laser source unit 40: Mirror unit 50: Pattern replacement unit 60: The first alignment monitoring unit 70: The first alignment adjustment unit 80: The second alignment monitoring unit 90: The second alignment adjustment unit L: Line beam L': pattern beam LM: marking beam M: Alignment mark M1: first alignment mark M2: Second alignment mark M3: Third alignment mark M4: Fourth alignment mark M5: Fifth alignment mark P: pattern P1: The first row of patterns P2: The second row of patterns P3: The third row of patterns P4: The fourth row of patterns P5: The fifth row of patterns r, r1, r2, r3, r4, r5: OK S: base S': transfer base S100, S200, S300, S410, S420, S430, S510, S520, S530, S600: steps X: left and right direction Y: vertical direction Z: front and rear direction Δx, Δy, Δθ: offset ΔZ1, ΔZ2, ΔZ3, ΔZ4: distance

FIG. 1 is a schematic diagram showing a wafer transfer apparatus according to an exemplary embodiment. FIG. 2 is a schematic diagram showing a mask having a plurality of patterns formed therein according to an exemplary embodiment. 3 to 7 are flow views of a wafer transfer process by using a wafer transfer method and a wafer transfer apparatus according to an exemplary embodiment. FIG. 8 is a flowchart of a wafer transfer method according to an exemplary embodiment.

S100, S200, S300, S410, S420, S430, S510, S520, S530, S600: steps

Claims (18)

A method for transferring wafers, including: Preparing a transfer substrate on the substrate to be transferred (hereinafter referred to as the transferred substrate), and a plurality of wafers are arranged on the transfer substrate; Emit a line beam; Shaping a plurality of pattern beams from the line beam by using a mask provided on the path of the line beam; By irradiating the patterned light beam to the transfer substrate to separate a plurality of the wafers from the transfer substrate; and A plurality of the wafers separated from the transfer substrate are placed on the transferred substrate. The wafer transfer method according to claim 1, wherein the separation of the plurality of wafers includes irradiating a plurality of the pattern beams to the plurality of the substrates that will be separated from the transfer substrate in a corresponding manner. Wafer. The wafer transfer method according to claim 2, further comprising replacing the pattern by changing the position of the mask, so that the line beam is transmitted through the plurality of patterns formed in the mask. A pattern of the size of each of the plurality of wafers to shape the line beam into the pattern beam. The wafer transfer method described in claim 3 further includes: By using the mask provided on the path of the line beam to shape the marking beam from the line beam; Irradiating the marking beam to the transfer substrate and photographing the marking beam on the transfer substrate to generate a marking beam image; and By using the marking beam image, the position of the mask is aligned for the first time with respect to the transfer base. The wafer transfer method according to claim 4, wherein the shaping of the pattern beam and the shaping of the marking beam are simultaneously performed by using the same line beam, The marking beam is shaped from one part of the line beam, and the pattern beam is shaped from the remaining part of the line beam. The wafer transfer method described in claim 4 further includes: Irradiating the pattern light beam to the transfer substrate, and photographing the pattern light beam transmitted through the transfer substrate to generate a pattern beam image; and By using the patterned light beam image, the inclination and distance of the mask are aligned with respect to the transfer base for the second time, for focusing transmission through the mask and irradiating to the transfer base The pattern beam. The wafer transfer method according to claim 4, wherein the shaping of the marking beam includes by transmitting the line beam through a plurality of alignment marks formed at each of both sides of a plurality of patterns A pair of the alignment marks is formed to form a pair of the mark beams at both sides of the pattern beam, and a pair of the alignment marks is formed in a pattern having a size corresponding to a plurality of the wafers On both sides. The wafer transfer method according to claim 7, wherein the generation of the marking beam image includes: Photographing a pair of the alignment marks formed on the transfer substrate by a pair of the marking light beams irradiated to the transfer substrate from top to bottom; and Inserting a reference mark into an image, the image being obtained by photographing the alignment mark with reference to the coordinates of the reference mark displayed on the transfer substrate corresponding to the marking beam. The wafer transfer method according to claim 8, wherein the initial alignment includes: Calculating the offset of the alignment mark relative to the reference mark from the marking beam image; and The position and inclination of the mask are adjusted as much as the offset in a direction crossing the traveling direction of the line beam, so that the alignment mark is consistent with the reference mark. The wafer transfer method according to claim 6, wherein the generation of the pattern beam comprises: scanning the transfer in an arrangement direction of the plurality of pattern beams transmitted through the transfer substrate from top to bottom. At the same time as the substrate, a plurality of focused images of the pattern beams are taken. The wafer transfer method according to claim 10, wherein the secondary alignment includes: Collecting the characteristics of the pattern beam from the focused image and comparing the collected characteristics with reference characteristics; and The position and inclination of the mask are adjusted in the traveling direction of the line beam, so that the collected characteristics are consistent with the reference characteristics. A wafer transfer device, which transfers a plurality of wafers from a transfer substrate to a transferred substrate, includes: A mask having a pattern for shaping the line beam into a plurality of pattern beams to be irradiated to the transfer substrate; The screen support is configured to support the screen in a movable and rotatable manner; and The laser source unit is configured to emit the line beam toward the mask so as to transfer a plurality of the wafers. The wafer transfer device according to claim 12, wherein a plurality of different patterns are formed in the mask, and One of the plurality of patterns has a size corresponding to each of the plurality of wafers. The wafer transfer device according to claim 13, further comprising a pattern replacement unit configured to change the position of the mask by controlling the mask support, so that the line beam is transmitted through a plurality of patterns的 has a pattern corresponding to the size of the plurality of wafers attached to the transfer substrate. The wafer transfer device according to claim 13, wherein each of the plurality of patterns includes a plurality of pattern holes, Wherein the pattern holes arranged on the same line in the width direction of the line beam have the same shape, size and arrangement as each other, and the pattern holes arranged in the direction crossing the width direction of the line beam have different shapes from each other , Size and layout. The wafer transfer device according to claim 14 or 15, wherein a plurality of alignment marks are formed on both sides of the plurality of patterns in the width direction of the line beam, A plurality of the alignment marks are respectively arranged on the same line with a plurality of patterns in the width direction of the line beam, and Transmitting through a plurality of the pattern light beams having a pattern corresponding to the size of the plurality of micro LED chips, and transmitting through a pair arranged on both sides of the pattern having the size corresponding to the plurality of the micro LED chips A pair of marking beams aligned with the markings are simultaneously irradiated to the transfer substrate. The wafer transfer device described in claim 16 further includes: A first alignment monitoring unit configured to generate a marking beam image by photographing the marking beam irradiated to the transfer substrate; and The first alignment adjustment unit is configured to change the direction of the mask that intersects the traveling direction of the line beam by controlling the mask support to be consistent with the reference mark displayed on the transfer base The position and the inclination of the upper part are such that a pair of the alignment marks formed in the transfer substrate from a pair of the marking beams irradiated from the top to the bottom on the transfer substrate corresponds to the marking beam . The wafer transfer device described in claim 16 further includes: A second alignment monitoring unit configured to generate a marking beam image by shooting a focused image of the pattern beam transmitted through the transfer substrate; and The second alignment adjustment unit is configured to change the position and inclination of the mask in the direction crossing the traveling direction of the line beam by controlling the mask support, so that the pattern beam is The characteristics are consistent with the reference characteristics, which are collected from the focused images of the plurality of pattern beams transmitted through the transfer substrate from top to bottom.

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