TW202114927A - Transfering apparatus and transfering method - Google Patents

Abstract

Provided is a transferring apparatus, which transfers a chip provided to a transferring substrate to a transferred substrate, including a first stage supporting the transferred substrate, a second stage supporting the transferring substrate so that the transferring substrate faces and is spaced apart from the transferred substrate, a laser irradiation unit having at least a portion spaced apart from the second stage in a direction in which the transferring substrate and the transferred substrate face each other to irradiate a laser beam to the transferring substrate, and a moving unit supporting the laser irradiation unit and moving the laser irradiation unit in a state of irradiating the laser beam.

Description

Transfer device and transfer method

The present invention relates to a transfer device and a transfer method, and more specifically, to a transfer device and a transfer method capable of improving the accuracy of a transfer procedure by dropping a wafer at an accurate position.

Generally speaking, a miniature light emitting diode (LED) represents an LED whose side size is equal to or smaller than 100 μm. Since the micro LED has a small size, the micro LED has a smaller amount of heat generation and power consumption than an ordinary LED, and a greater energy efficiency than an ordinary LED.

In order to apply the micro LED to a display device, a technique of transferring a wafer in which the micro LED is formed to each pixel of a substrate for a display panel has been used. Transfer is a process of transferring the wafer to the glass below the wafer by irradiating the wafer formed on the wafer with a laser beam to drop the wafer.

However, the alignment between wafer and glass is a complicated process. Therefore, when the transfer process is performed, the alignment between the wafer and the glass may be distorted. Therefore, the wafer may be moved to the wrong position, causing defects.

[Patent Literature]

(Patent Document 1) KR 10-2019-0079147 A

The present invention provides a transfer device and a transfer method that can improve the accuracy of a transfer procedure by dropping a wafer at an accurate position.

The present invention also provides a transfer device and a transfer method capable of shortening the program time by separately driving the stage for supporting the substrate to be transferred and the stage for supporting the substrate to be transferred.

According to an exemplary embodiment, a transfer apparatus that transfers a wafer set to a transfer substrate to a substrate to be transferred (hereinafter, referred to as a transferred substrate) includes: a first stage configured to support the A substrate to be transferred; a second stage configured to support the substrate to be transferred so that the substrate to be transferred faces the substrate to be transferred and is spaced apart from the substrate to be transferred; a laser irradiation unit At least a part thereof is spaced apart from the second stage in the direction in which the transfer substrate and the transferred substrate face each other, so that the laser beam is irradiated to the transfer substrate; and a moving unit , Configured to support the laser irradiation unit and move the laser irradiation unit in a state where the laser beam is irradiated.

In an exemplary embodiment, the moving unit may include: a path member extending in a direction crossing the direction in which the transferred substrate and the transferred substrate face each other; and a moving member connected to The laser irradiation unit is installed to be linearly movable along the extending direction of the path member.

In an exemplary embodiment, the transfer device may further include: a first drive unit configured to support the first stage so as to move the first stage in multiple directions; and a second drive The unit is configured to support the second stage so as to move the second stage in multiple directions independently of the first stage.

In an exemplary embodiment, the laser irradiation unit may include: a laser generator configured to generate a laser beam; an angle adjuster disposed between the laser generator and the second stage To adjust the irradiation direction of the laser beam; a shape adjuster is arranged between the laser generator and the angle adjuster to adjust the laser irradiated to the transfer substrate The shape of the light beam; and a housing configured to support the laser generator, the angle adjuster, and the shape adjuster, and can be moved by the moving unit.

In an exemplary embodiment, the shape adjuster may include: a mask member having a plurality of pattern holes; and a selection member configured to support the mask member and move the mask member in a plurality of directions , To select a pattern hole through which the laser beam passes from among the plurality of pattern holes.

In an exemplary embodiment, the mask member may be further provided with an alignment hole, and the transfer device may further include: a photographing unit configured to photograph the shape of the laser beam passing through the alignment hole And a position, the shape and the position are irradiated to at least one of the transfer substrate and the transferred substrate; and an alignment unit connected to the photographing unit to align according to the passing through The irradiated shape and position of the laser beam of the hole adjust the alignment state of each of the transferred substrate and the transferred substrate.

In an exemplary embodiment, the second stage can be moved into and out of the space between the laser irradiation unit and the first stage, and the alignment unit can adjust the transferred substrate And then adjust the alignment state of the transfer substrate.

In an exemplary embodiment, the area of the transferred substrate may be greater than the area of the transferred substrate, and a part of the laser beam passing through the alignment hole may be irradiated to the transferred substrate, And another part of the laser beam can be irradiated to the transferred substrate through the second stage.

According to another exemplary embodiment, a transfer method includes: supporting a transferred substrate by a first stage; supporting a transfer substrate provided with a wafer by a second stage, and arranging the transfer substrate to face The transferred substrate; while moving the laser irradiation unit configured to irradiate the laser beam, irradiate the laser beam to the transferred substrate; and by using the laser beam The wafer set on the transfer substrate is dropped to transfer the wafer to the transferred substrate.

In an exemplary embodiment, the wafers may be provided in plural, and the plural wafers may be arranged in an array type. The irradiating the laser beam while moving the laser irradiation unit may include: generating a laser beam; and linearly moving the laser irradiation unit in one direction.

In an exemplary embodiment, linearly moving the laser irradiation unit may include appropriately irradiating the laser beam to the transfer substrate until the laser beam moving in the one direction reaches The time of each of the wafers spaced apart from each other in the one direction.

In an exemplary embodiment, supporting the transferred substrate by the first stage may include: irradiating an alignment laser to the transferred substrate; and according to the irradiation shape and the irradiation shape of the alignment laser At least one of the irradiation positions adjusts the alignment state of the transferred substrate by moving the first stage. Supporting the transfer substrate to which the wafer is attached by the second stage may include: irradiating the alignment laser to the transfer substrate to which the wafer is attached; and according to the alignment laser At least one of the irradiation shape and the irradiation position is adjusted by moving the second stage to adjust the alignment state of the transfer substrate.

In an exemplary embodiment, adjusting the alignment state according to the irradiation shape and the irradiation position of the alignment laser may include adjusting the horizontal alignment state of the transferred substrate or the transferred substrate .

In an exemplary embodiment, marks may be formed in the transferred substrate and the transferred substrate, and the alignment is adjusted according to the irradiation shape and the irradiation position of the alignment laser The state may include adjusting the plane alignment state of the transferred substrate or the transferred substrate so that the mark is disposed at a position corresponding to the irradiation position of the alignment laser.

In an exemplary embodiment, supporting the transfer substrate provided with the wafer by the second stage may include moving the second stage to be set between the laser irradiation unit and the second stage. Between a stage, and adjusting the alignment state of the transferred substrate may be performed before the second stage is moved to be set between the first stage and the second stage.

In an exemplary embodiment, irradiating the alignment laser may include: generating a plurality of alignment lasers; and irradiating a part of the plurality of alignment lasers to the transfer substrate and pass through the first The second stage irradiates the other part to the transferred substrate.

Hereinafter, specific embodiments will be explained in detail with reference to the drawings. However, the present invention can be implemented in many different forms, and should not be construed as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided so that the present invention will be thorough and complete, and to inform the art. The technicians in fully convey the concept of the present invention. In the drawings, the thickness of layers and regions are exaggerated for clarity. In the various figures, the same reference numbers always refer to the same elements.

1 is a perspective view showing a transfer device according to an exemplary embodiment, FIG. 2 is a perspective view showing a structure of a first stage and a first driving unit according to an exemplary embodiment, and FIG. 3 is a perspective view showing a structure according to an example A perspective view of the structure of the second stage and the second driving unit of an exemplary embodiment. Hereinafter, the transfer device according to the exemplary embodiment will be explained.

1 to 3, the transfer device according to the exemplary embodiment is a transfer device that transfers a wafer attached to a transfer substrate to a substrate to be transferred (hereinafter, referred to as a transferred substrate). The transfer device 100 includes a first stage 110, a second stage 120, a laser irradiation unit 130, and a moving unit 140.

Here, the chip may be a miniature light emitting diode (LED). The transfer substrate W may be a wafer on which a plurality of chips are arranged in an array type and attached. The wafer may be directly formed on the transfer substrate W, or a wafer formed on a separate substrate may be attached to the transfer substrate W. Therefore, the wafer can be set to the transfer substrate W. The substrate G to be transferred may be glass. However, the exemplary embodiment of the present invention is not limited to the material of each of the transferred substrate W and the transferred substrate G. For example, each of the transferred substrate W and the transferred substrate G may include various materials.

The first stage 110 supports the transferred substrate G, as shown in FIG. 2. For example, the first stage 110 may have a rectangular plate shape. Therefore, the transferred substrate G may be located on and supported by the top surface of the first stage 110.

In addition, the top surface of the first stage 110 may have a larger area than the bottom surface of the substrate G to be transferred. Therefore, the entire bottom surface of the transferred substrate G may contact the top surface of the first stage 110 and be stably located on the top surface of the first stage 110. However, the exemplary embodiment is not limited to the structure and shape of the first stage 110.

The second stage 120 supports the transfer substrate W, as shown in FIG. 3. The second stage 120 may be spaced upward relative to the first stage 110 to face the first stage 110. Therefore, when the transfer substrate W is supported by the second stage 120, the transfer substrate W may be spaced from the transferred substrate G on the first stage 110 in the vertical direction to face the transferred substrate G . Therefore, the top surface of the transferred substrate G may face the bottom surface of the transferred substrate W.

In addition, the second stage 120 may have a rectangular plate shape. An opening may be defined at the central portion of the second stage 120. The second stage 120 may have a larger area than the transfer substrate W, and the opening may have a smaller area than the transfer substrate W. Therefore, the transfer substrate W may not pass through the opening while contacting the second stage 120.

Here, an adsorber (not shown in the figure) may be provided to the lower part of the second stage 120. The adsorber may be installed to surround at least a part of the circumference of the opening. The transfer substrate W may be adsorbed to the lower part of the second stage 120 by the adsorber and supported by the second stage 120, and a part of the top surface of the transfer substrate W may be exposed to the outside through the opening of the second stage 120. Therefore, the laser irradiation unit 130 disposed above the second stage 120 can irradiate the top surface of the transfer substrate W with the laser beam through the opening. However, the exemplary embodiment is not limited to the shape of the second stage 120 and the method of supporting and transferring the substrate W. For example, the second stage 120 may have various shapes, and the transfer substrate W may be supported by various methods.

The transfer device 100 may further include a first driving unit 150 and a second driving unit 160. The first stage 110 and the second stage 120 can be moved separately by the first driving unit 150 and the second driving unit 160.

Referring to FIG. 2, the first driving unit 150 may be connected to the first stage 110. The first driving unit 150 may support the first stage 110 and move the first stage 110 in multiple directions. The first driving unit 150 may include a first front and rear guide rail 151, a first front and rear driving member 152, a first left and right guide rail 153, a first left and right driving member 154, a first vertical driving member 155, and a first rotating member (not shown in the figure) ).

The first front and rear rails 151 may extend in the front and rear direction. The first front and rear guide rails 151 provide a movement path of the first front and rear driving member 152. The first front and rear guide rails 151 may be provided in pairs, and the pair of first front and rear guide rails 151 may be spaced apart from each other in the left-right direction.

The first front-rear driving member 152 may be installed to be movable on the first front-rear rail 151. The first front-rear driving member 152 may move in the front-rear direction along the extending direction of the first front-rear rail 151. The first front and rear driving members 152 may be provided in pairs, and the pair of first front and rear driving members 152 may be installed to be movable on the pair of first front and rear rails 151, respectively. Therefore, the first left and right guide rails 153 may be installed on the pair of first front and rear driving members 152 and stably supported by the pair of first front and rear driving members 152.

The first left and right guide rails 153 may extend in a left and right direction crossing the extending direction of the first front and rear guide rails 151. The first left and right guide rails 153 provide a movement path of the first left and right driving members 154. The first left and right guide rails 153 may be installed on and supported by the first left and right driving members 152. For example, the first left and right guide rails 153 may have an extension length equal to or greater than the interval length between the first front and rear driving members 152 in the left and right direction. Therefore, both ends of the first left and right guide rails 153 may be supported by the first left and right driving members 152, respectively. When the first left-right driving member 152 moves in the front-rear direction, the first left-right rail 153 may also move in the front-rear direction.

The first front and rear driving member 154 may be installed to be movable on the first left and right guide rails 153. The first left and right driving members 154 may move in the left and right directions along the extending direction of the first left and right guide rails 153. Since the first left and right driving members 154 are supported by the first left and right guide rails 153, when the first left and right guide rails 153 are moved in the front and rear directions by the first front and rear driving members 152, the first left and right driving members 154 can also move in the front and rear directions.

The first vertical driving member 155 may be installed on the first left and right driving members 154. The first vertical driving member 155 may have a lower end connected to the first left and right driving members 154 and an upper end connected to the first stage 110. At least a part of the first vertical driving member 155 may extend or contract in the vertical direction. Therefore, the first stage 110 can be moved vertically by the operation of the first vertical driving member 155.

In addition, the first vertical driving member 155 may be provided in plural. The first vertical driving member 155 may be connected to different parts of the lower part of the first stage 110, respectively. Therefore, when the height of the first vertical driving member 155 is adjusted differently, the inclination of the first stage 110 may be adjusted.

Here, since the first vertical driving member 155 is supported by the first left-right driving member 154, when the first left-right driving member 154 moves in the left-right direction, the first vertical driving member 155 and the first stage 110 may also be positioned on the left and right. Move in the direction. When the first left-right driving member 154 moves in the front-rear direction by the first front-rear driving member 152, the first vertical driving member 155 and the first stage 110 can also be moved in the front-rear direction. Therefore, the position of the transferred substrate G on the first stage 110 can be adjusted in multiple directions.

The first rotating member may be installed on the first vertical driving member 155. The first rotating member may rotate the first vertical driving member 155. Therefore, when the first vertical driving member 155 is rotated by the first rotating member, the first stage 110 may be rotated. Therefore, the transferred substrate G on the first stage 110 can also be rotated. However, the exemplary embodiment is not limited to the operation structure and connection method of the components of the first driving unit 150. For example, the components of the first driving unit 150 may have various operation structures and various connection methods.

Referring to FIG. 3, the second driving unit 160 may be connected to the second stage 120. The second driving unit 160 can support the second stage 120 and move the second stage 120 in multiple directions independently of the first stage 110. The second driving unit 160 may include a second front and rear guide rail 161, a second front and rear driving member 162, a second left and right guide rail 163, a second left and right driving member (not shown in the figure), and a second vertical driving member (not shown in the figure). ) And a second rotating member (not shown in the figure).

The second front and rear rails 161 may extend in the front and rear direction. The second front and rear guide rail 161 provides a movement path of the second front and rear driving member 162. A pair of second front and rear guide rails 161 may be provided, and they are spaced apart from each other in the left-right direction. For example, the separation distance of the pair of second front and rear guide rails 161 may be greater than the separation distance of the pair of first front and rear guide rails 151. Therefore, the first front and rear rails 151 may be disposed between the second front and rear rails 161.

Here, the top surface of the second front and rear rails 161 may be disposed above the top surface of the first front and rear rails 151. Therefore, the second stage 120 may be set above the first stage 110 through the second front and rear guide rails 161. However, the exemplary embodiment is not limited to the structure of the second front and rear rails 161. For example, the second front and rear rails 161 may have various structures.

The second front and rear driving member 162 may be installed to be movable on the second front and rear rail 161. The second front-rear driving member 162 is movable in the front-rear direction along the extension direction of the second front-rear rail 161. A pair of second front and rear driving members 162 may be provided, and they are installed so as to be movable on a pair of second front and rear guide rails 161, respectively. Therefore, the second left and right guide rails 163 may be installed on the pair of second front and rear driving members 162 and stably supported by the pair of second front and rear driving members 162.

The second left and right guide rails 163 may extend in a left and right direction crossing the extending direction of the second front and rear guide rails 161. The second left and right guide rails 163 provide a movement path of the second left and right driving members. The second left and right guide rails 163 may be installed on and supported by the second front and rear driving member 162. For example, the second left and right guide rails 163 may have an extension direction equal to or greater than the separation distance between the second front and rear driving members 162 in the left and right direction. Therefore, both ends of the second left and right guide rails 163 may be supported by the second front and rear driving members 162, respectively. Therefore, when the second front-rear driving member 162 moves in the front-rear direction, the second left and right guide rails 163 can also move in the front-rear direction.

In addition, a hole may be defined at the center portion of the second left and right guide rails 163. Therefore, the transferred substrate W adsorbed to the second stage 120 can directly face the transferred substrate G below it through the holes defined in the second left and right guide rails 163. However, the exemplary embodiment is not limited to the structure and shape of the second left and right rails 163. For example, the second left and right guide rails 163 may have various structures and shapes.

The second left and right driving members may be installed to be movable on the second left and right guide rails 163. The second left and right driving members are movable in the left and right directions along the extending direction of the second left and right guide rails 163. Since the second left and right driving members are supported by the second left and right guide rails 163, when the second left and right guide rails 163 are moved in the front and rear directions by the second front and rear driving members 162, the second left and right driving members can also be moved in the front and rear directions.

In addition, a hole may be defined at the center portion of the second left and right driving members. Therefore, the transferred substrate W adsorbed to the second stage 120 can directly face the transferred substrate G below it through the holes defined in the second left and right driving members. However, the exemplary embodiment is not limited to the structure and shape of the second left and right driving members. For example, the second left and right driving members may have various structures and shapes.

The second vertical driving member may be installed between the second left and right driving members and the second stage 120. The second vertical driving member may have a lower end connected to the top surface of the second left and right driving member and an upper end connected to the bottom surface of the second stage 120. At least a part of the second vertical driving member may expand or contract in the vertical direction. Therefore, the second stage 120 can be moved vertically by the operation of the second vertical driving member.

In addition, the second vertical driving member may be provided in plural. The second vertical driving members may be connected to different parts of the lower part of the second stage 120, respectively. Therefore, when the height of the second vertical driving member is adjusted differently, the inclination of the second stage 120 can be adjusted.

Here, since the second vertical driving member is supported by the second left-right driving member, when the second left-right driving member moves in the left-right direction, the second vertical driving member and the second stage 120 can also move in the left-right direction. When the second left-right driving member is moved in the front-rear direction by the second front-rear driving member, the second vertical driving member and the second stage 120 can also be moved in the front-rear direction. Therefore, the position of the transfer substrate W sucked to the second stage 120 can be adjusted in multiple directions.

The second rotating member may be mounted on the second vertical driving member. The second rotating member can rotate the second vertical driving member. Therefore, when the second rotating member rotates the second vertical driving member, the second stage 120 may rotate. Therefore, the transfer substrate W sucked to the second stage 120 can also be rotated. However, the exemplary embodiment is not limited to the operation structure and connection method of the components of the second driving unit 160. For example, the components of the second driving unit 160 may have various operation structures and various connection methods.

As described above, the first stage 110 and the second stage 120 can be moved separately. Therefore, when the operation of allowing the transferred substrate G to be supported by the first stage 110 and the operation of allowing the transferred substrate W to be supported by the second stage 120 are performed, the first stage 110 and the second stage 120 can be separated. mobile. Therefore, by shortening the time for transferring the transferred substrate G and the transferred substrate W to the process position, the process efficiency can be improved.

In addition, since the first stage 110 and the second stage 120 are moved separately, the alignment state between the transferred substrate W and the transferred substrate G can be adjusted separately. Therefore, when at least one of the transferred substrate W and the transferred substrate G has a defective alignment state, only the defective alignment state can be easily adjusted.

4 is a cross-sectional view showing a structure of a laser irradiation unit according to an exemplary embodiment, FIG. 5 is a perspective view showing a structure of a shape adjuster according to an exemplary embodiment, and FIG. 6 is a perspective view showing a structure according to an exemplary embodiment Example of a view of the structure that adjusts the alignment of the transfer substrate. Hereinafter, the laser irradiation unit according to the exemplary embodiment will be explained in detail.

Referring to FIG. 4, at least a part of the laser irradiation unit 130 may be upwardly spaced relative to the second stage 120 in a direction (or a vertical direction) in which the transferred substrate G and the transferred substrate W face each other. Therefore, the position of the laser irradiation unit 130 can be adjusted separately from the first stage 110 or the second stage 120, and the laser irradiation unit 130 can irradiate the transfer substrate supported by the second stage 120 with a laser beam W. The laser irradiation unit 130 includes a laser generator 131, an angle adjuster 132, a shape adjuster 133 and a housing 134.

The laser generator 131 is used to generate a laser beam. When the laser generator 131 generates a laser beam, by using an optical device (not shown in the figure), the laser beam may have a beam shape extending in the left-right direction.

The angle adjuster 132 may be disposed between the laser generator 131 and the second stage 120. The angle adjuster 132 may be a mirror that reflects the laser beam. In other words, the angle adjuster 132 can adjust the irradiation direction of the laser beam. Therefore, the laser beam moving in the front-rear direction in the housing 134 may be reflected by the angle adjuster 132 and irradiated downward. Therefore, the laser beam can be irradiated toward the second stage 120 under the laser irradiation unit 130.

The shape adjuster 133 may be provided between the laser generator 131 and the angle adjuster 132. Therefore, the beam-shaped laser beam moved from the laser generator 131 to the angle adjuster 132 may pass through the shape adjuster 133. Therefore, the shape of the beam-shaped laser beam passing through the shape adjuster 133 can be adjusted, and then the laser beam having the adjusted shape can be irradiated to the transfer substrate W. The shape adjuster 133 may include a mask member 133a and a selection member 133b, as shown in FIG. 5.

The mask member 133a may have a plate shape and include a plurality of pattern holes h1 through which the laser beam passes. A part of the laser beam moved from the laser generator 131 to the mask member 133a may pass through the pattern hole h1 and the other part may not pass through the pattern hole h1. Therefore, the shape of the laser beam irradiated to the transfer substrate W may have a pattern according to the shape of the pattern hole h1. Therefore, the beam-shaped laser beam may be irradiated to the transfer substrate W in a plurality of dot shapes spaced apart from each other in the left-right direction through the mask member 133a.

Here, the pattern hole h1 may have different shapes and sizes according to its position. For example, pattern holes h1 having the same shape may be spaced apart from each other in the left-right direction to form a line, and lines including pattern holes h1 having different shapes or sizes may be spaced apart from each other in the vertical direction. Therefore, the beam-shaped laser beam extending in the left-right direction may pass through one of the lines of the mask member 133a. Therefore, the shape or size of the laser beam irradiated to the transfer substrate W may be determined according to the shape or size of the pattern hole h1 of the line of the mask member 133a.

In addition, the mask member 133a may further include an alignment hole h2. The alignment hole h2 can be provided in multiples. The pattern hole h1 may be provided at the central part of the mask member 133a, and the plurality of alignment holes h2 may be provided at the outer part of the mask member 133a surrounding the central part. Each of the alignment holes h2 may have a cross shape. Therefore, the laser beam passing through the alignment hole h2 can become an alignment laser, and display a cross shape on the surface of the transferred substrate W or the transferred substrate G. Therefore, the alignment state of the transferred substrate W or the transferred substrate G can be adjusted by using the displayed shape or position of the alignment laser as a reference. However, the exemplary embodiment is not limited to the shape of the alignment hole h2. For example, the alignment hole h2 may have various shapes.

The selection member 133b may support the mask member 133a. The selection member 133b may move the mask member 133a in a plurality of directions to select a line of the mask member 133a through which the laser beam passes in the plurality of pattern holes h1. The selection member 133b may select the pattern hole h1 through which the laser beam passes according to the shape, size, or arrangement method of the wafer attached to the transfer substrate W in the left-right direction.

For example, the selection member 133b may include a front and rear driving body, a left and right driving body, a vertical driving body, and a rotation driving body. Therefore, the selection member 133b can adjust the vertical direction, the front-rear direction, the left-right direction, and the inclination of the mask member 133a. When the position of the mask member 133a is adjusted, the pattern hole h1 of the line through which the laser beam passes can be selected, and thus the shape or size of the laser beam can be selected.

The housing 134 has an inner space in which the laser generator 131, the angle adjuster 132, and the shape adjuster 133 are accommodated and supported. The housing 134 can be connected with the mobile unit 140, and the entire housing 134 can be moved by the mobile unit 140. Therefore, when the housing 134 moves, all the laser generators 131, angle adjusters 132, and shape adjusters 133 can also move.

In addition, the housing 134 may be disposed above the second stage 120. The housing 134 may extend in the front-rear direction. The laser generator 131, the angle adjuster 132, and the shape adjuster 133 may be spaced apart from each other in the front-to-rear direction in the housing 134. Therefore, the laser beam generated in the laser generator 131 can move in the front and rear directions in the housing 134.

Here, an opening may be defined in a portion of the housing 134 facing the second stage 120. Therefore, the laser beam reflected by the angle adjuster 132 can be irradiated toward the second stage 120 through the opening. However, the exemplary embodiment is not limited to the structure and shape of the housing 134. For example, the housing can have various structures and shapes.

The transfer device 100 in FIG. 6 may further include a photographing unit 180 and an alignment unit 190. The operation of adjusting the alignment state between the transferred substrate W and the transferred substrate G may be performed by using the photographing unit 180 and the alignment unit 190.

The photographing unit 180 may be a camera. The photographing unit 180 may be disposed above the second stage 120. Therefore, the photographing unit 180 can photograph the laser beam irradiated to the surface of the transferred substrate W or the transferred substrate G. In addition, the photographing unit 180 can check the position or shape of the laser beam irradiated on the transferred substrate W or the transferred substrate G.

The alignment unit 190 is connected to the photographing unit 180. The alignment unit 190 can adjust the alignment state between the transfer substrate W and the transferred substrate G according to the position or shape of the laser beam passing through the alignment hole h2 and irradiated on the transfer substrate W or the transferred substrate G .

For example, in the case where the alignment state is adjusted according to the irradiation shape of the alignment laser, the irradiation shape of the alignment laser can be checked. Therefore, when the alignment laser having the cross shape is distorted in shape, the horizontal state between the transferred substrate W and the transferred substrate G can be determined as a defect. Therefore, the horizontal alignment state between the transferred substrate W and the transferred substrate G can be adjusted by adjusting the horizontal state of the first stage 110 or the second stage 120 so that the shape of the alignment laser is displayed without distortion.

In the case of adjusting the alignment state according to the irradiation position of the alignment laser, the irradiation position of the alignment laser can be checked. In addition, marks corresponding to the shape of the alignment laser may be formed on the transferred substrate W and the transferred substrate G. Therefore, when the position of the alignment laser does not correspond to (or does not coincide with) the position of the mark, the alignment state between the transferred substrate W and the transferred substrate G on the X-Y plane can be determined as a defect. Therefore, the transfer substrate W and the transferred substrate can be adjusted by moving the first stage 110 or the second stage 120 in the front-rear direction and the left-right direction so that the mark corresponds to (or coincides with) the irradiation position of the alignment laser. The plane alignment state between G.

Here, the second stage 120 can be moved into or out of the space between the laser irradiation unit 130 and the first stage 110 through the second driving unit 160. When the second stage 120 is disposed between the laser irradiation unit 130 and the first stage 110, the alignment laser may not irradiate the transferred substrate G on the first stage 110. Therefore, the alignment unit 190 can adjust the alignment state of the transferred substrate G in a state in which the second stage 120 is moved out of the space between the laser irradiation unit 130 and the first stage 110, and then adjust the alignment state of the transferred substrate G by placing the second stage 120 The stage 120 is moved to be arranged between the laser irradiation unit 130 and the first stage 110 to adjust the alignment state of the transferred substrate W.

In addition, the transferred substrate G may have a larger area than the transferred substrate W. A transmission window (not shown in the figure) may be formed in the second stage 120 so that the alignment laser is transmitted through the transmission window. The transmissive window may surround at least a part of the outer circumference of the transfer substrate W. Therefore, a part of the plurality of alignment lasers can be irradiated to the transfer substrate W, and another part of the plurality of alignment lasers can be irradiated to the transferred substrate G through the second stage 120. Therefore, the alignment state of the transferred substrate W and the transferred substrate G can be adjusted at the same time.

FIG. 7 is a view showing the structure of a laser irradiation unit and a mobile unit according to an exemplary embodiment. Hereinafter, the mobile unit according to the exemplary embodiment will be explained in detail.

Referring to FIGS. 4 and 7, the moving unit 140 may support the laser irradiation unit 130. The moving unit 140 may adjust the irradiation position of the laser beam by moving the laser irradiation unit 130 in a state where the laser beam is irradiated. Therefore, in the state where the first stage 110 and the second stage 120 are stopped, the transferred substrate W and the transferred substrate G can be fixed in place, and the moving unit 140 can move the laser irradiation unit 130 to The substrate W is scanned and transferred by using a laser beam. The moving unit 140 includes a path member 141 and a moving member 142.

The path member 141 may extend in a direction (or a front-rear direction) that intersects the direction (or a vertical direction) in which the transfer substrate W faces the transferred substrate G. The path member 141 provides a moving path of the moving member 142. A pair of path members 141 may be provided, and they are spaced apart from each other in the left-right direction.

Here, the moving unit 140 may further include a supporting member 143. The support member 143 may be spaced upward with respect to the second stage 120. The path member 141 may be installed on the support member 143. An opening may be defined in a part of the support member 143 facing the second stage 120. Therefore, the laser beam generated from the laser irradiation unit 130 may be irradiated to the transfer substrate W through the opening defined in the support member 143.

The moving member 142 may be connected to the housing 134 of the laser irradiation unit 130 to support the laser irradiation unit 130. The moving member 142 may be installed on the path member 141 and move linearly in the extending direction (or the front-rear direction) of the path member 141. Therefore, when the moving member 142 moves in the front-rear direction, the laser irradiation unit 130 may also linearly move in the front-rear direction. Therefore, the irradiation position of the laser beam can be adjusted in the front-to-rear direction by moving the laser irradiation unit 130 instead of adjusting the positions of the first stage 110 and the second stage 120.

In addition, the moving member 142 can be moved by suspending on the path member 141. For example, the moving member 142 may be floated on the path member 141 by an air bearing method or a magnetic levitation method. Therefore, friction generated when the moving member 142 moves on the path member 141 can be prevented, and the laser irradiation unit 130 can accurately adjust the laser beam to move the substrate by accurately moving the moving member 142 to a desired position. Irradiation position on W.

As described above, since the first stage 110 and the second stage 120 are fixed, the transfer procedure can have improved accuracy compared to the case where the irradiation position of the laser beam is adjusted by moving the stage. That is, since the position of the transferred substrate G facing the transfer substrate W changes when the stage is moved, when the wafer falls from the transfer substrate W, the wafer may fall to deviate from the accurate position Different locations. Since the positions of the transferred substrate W and the transferred substrate G are unchanged when the first stage 110 and the second stage 120 are fixed, the wafer can be accurately dropped to a desired position.

In addition, since the moving unit 140 moves the entire laser irradiation unit 130, although the irradiation position of the laser beam on the transfer substrate W is changed, the same amount of light and focus can be maintained. Therefore, the feature in which the condition of the laser beam irradiated to the transfer substrate W varies for each zone can be prevented, and the accuracy of the program can be improved.

Fig. 8 is a flowchart showing a migration method according to an exemplary embodiment. Hereinafter, the migration method according to the exemplary embodiment will be explained.

The transfer method according to the exemplary embodiment is a method of transferring a wafer set to a transfer substrate to a transferred substrate. 8, the transfer method includes: process S110, supporting the transferred substrate to the first stage; process S120, supporting the transferred substrate to which the wafer is attached through the second stage, and positioning the transferred substrate to face The transferred substrate; process S130, while moving the laser irradiation unit that irradiates the laser beam, irradiate the transferred substrate with the laser beam; and process S140, attach to the transferred substrate by using the laser beam The wafer falls and the wafer is transferred to the transferred substrate.

1 to 7, first, an operation of adjusting the alignment state of the laser beam irradiated from the laser irradiation unit 130 may be performed. A reference substrate (not shown in the figure) may be prepared under the laser irradiation unit 130. Since the shape and position of the laser beam are checked by irradiating the reference substrate with the laser beam, and then the operation of one of the laser generator 131, the shape adjuster 133 and the angle adjuster 132 is controlled, the light quantity of the laser beam can be adjusted And focus.

After that, the transferred substrate G can be supported by the first stage 110. That is, the first stage 110 can be moved to the position where the transferred substrate G is moved, and by controlling the operation of the first driving unit 150, the transferred substrate G can be positioned on the first stage 110.

Here, the alignment state of the substrate G to be transferred can be adjusted initially. For example, it is possible to visually check whether the transferred substrate G on the first stage 110 is twisted by photographing the edge of the transferred substrate G. When it is determined that the position of the transferred substrate G is distorted relative to the accurate position, the position of the transferred substrate G on the first stage 110 on the X-Y plane can be adjusted.

When the transferred substrate G is located on the first stage 110, the first stage 110 can be moved below the laser irradiation unit 130 (or the program position) by controlling the operation of the first driving unit 150. Therefore, the transferred substrate G on the first stage 110 may face the laser irradiation unit 130.

Here, the alignment state of the transferred substrate G can be adjusted in a secondary manner. For example, the transferred substrate G can be irradiated with an alignment laser. In addition, by using the imaging unit 180, the alignment of the transferred substrate G can be accurately adjusted by moving the first stage 110 according to at least one of the shape and position of the alignment laser irradiated to the transferred substrate G status.

In the case of adjusting the alignment state according to the irradiation shape of the alignment laser, the shape of the alignment laser irradiated to the transferred substrate G can be checked. Therefore, when the alignment laser having the cross shape is distorted in shape, the horizontal state of the transferred substrate G can be determined as a defect.

Therefore, the horizontal alignment state of the transferred substrate G can be adjusted by adjusting the horizontal state of the first stage 110 so that the shape of the alignment laser is displayed without distortion. Here, when the alignment hole h2 has a cross shape, the horizontal alignment state of the transferred substrate G can be easily checked. That is, when the inclination of the transferred substrate G is distorted, the shape distortion of the alignment laser displayed on the surface of the transferred substrate G can be easily checked. On the contrary, when the shape of the alignment laser is displayed normally, it can be easily checked that the horizontal state of the transferred substrate G is normal.

In the case of adjusting the alignment state according to the irradiation shape of the alignment laser, the position of the alignment laser irradiated to the transferred substrate G can be checked. In addition, a mark corresponding to the shape of the alignment laser may be formed in the transferred substrate G. Therefore, when the position of the alignment laser does not correspond to (or does not coincide with) the position of the mark, the alignment state of the transfer substrate W on the X-Y plane can be determined as a defect. Therefore, the plane alignment state of the transferred substrate G can be adjusted by moving the first stage 110 in the front-rear direction and the left-right direction so that the mark corresponds to (or coincides with) the irradiation position of the alignment laser.

After that, the transfer substrate W to which the wafer is attached can be supported by the second stage 120. That is, the second stage 120 can be moved to the position where the transfer substrate W is moved, and by controlling the operation of the second driving unit 160, the transfer substrate W can be positioned on the second stage 120.

Here, the alignment state of the transfer substrate W can be adjusted initially. For example, the transfer substrate W may have a circular shape, and a groove may be formed in the edge of the transfer substrate W. Therefore, it is possible to visually check whether the groove is provided at the rear end of the transfer substrate W by photographing the position of the groove formed in the transfer substrate W. When the grooves are arranged at different positions, it can be determined that the position of the transferred substrate W is twisted relative to the accurate position. Therefore, the position of the groove of the transfer substrate W can be adjusted to an accurate position, and then the transfer substrate W can be adsorbed to the lower part of the second stage 120.

When the transfer substrate W is adsorbed to the second stage 120, the second stage 120 may be moved to be disposed between the laser irradiation unit 130 and the first stage 110. Therefore, the second stage 120 can be moved to face the first stage 110, and the transferred substrate W can face the transferred substrate G.

Here, after the alignment state of the transferred substrate G is adjusted, the second stage 120 may be moved to be disposed between the laser irradiation unit 130 and the first stage 110. Therefore, it is possible to adjust the position of the transferred substrate G by irradiating the transferred substrate G with the alignment layer [Alignment Laser] before the second stage 120 is blocked between the laser irradiation unit 130 and the first stage 110 Alignment status.

When the second stage 120 is completely moved, the alignment state of the transferred substrate W can be adjusted secondary. For example, alignment laser irradiation can be used to transfer the substrate W. In addition, by using the imaging unit 180, the alignment state of the transfer substrate W can be accurately adjusted by moving the second stage 120 according to at least one of the shape and position of the alignment laser irradiated to the transfer substrate W.

In the case of adjusting the alignment state according to the irradiation shape of the alignment laser, the shape of the alignment laser irradiated to the transfer substrate W can be checked. Therefore, when the alignment laser having the cross shape is distorted in shape, the horizontal state of the transfer substrate W can be determined as a defect. Therefore, the horizontal alignment state of the transfer substrate W can be adjusted by adjusting the horizontal state of the second stage 120 so that the shape of the alignment laser is not distorted.

Here, when the alignment hole h2 has a cross shape, the horizontal alignment state of the transfer substrate W can be easily checked. That is, when the inclination of the transfer substrate W is distorted, the shape distortion of the alignment laser displayed on the surface of the transfer substrate W can be easily checked. On the contrary, when the shape of the alignment laser is displayed normally, it can be easily checked that the horizontal state of the transfer substrate W is normal.

In the case of adjusting the alignment state according to the irradiation position of the alignment laser, the position of the alignment laser irradiated to the transfer substrate W can be checked. In addition, a mark corresponding to the shape of the alignment laser may be formed in the transfer substrate W. Therefore, when the position of the alignment laser does not correspond to (or does not coincide with) the position of the mark, the alignment state of the transfer substrate W on the X-Y plane can be determined as a defect. Therefore, the plane alignment state of the transfer substrate W can be adjusted by moving the second stage 120 in the front-rear direction and the left-right direction so that the mark corresponds to (or coincides with) the irradiation position of the alignment laser.

As described above, the alignment state of each of the transferred substrate G and the transferred substrate W can be adjusted by using the alignment laser as a reference. Therefore, the alignment state between the transferred substrate W and the transferred substrate G can be adjusted.

In addition, the operation of secondarily adjusting the alignment state between the transferred substrate W and the transferred substrate G can be performed at the same time. In other words, the first stage 110 and the second stage 120 can be moved to be disposed under the laser irradiation unit 130, and then a plurality of alignment lasers can be generated. A part of the plurality of alignment lasers may be irradiated to the transfer substrate W, and another part of the plurality of alignment lasers may be irradiated to the transferred substrate G through the transmission window provided to the second stage 120. Therefore, the alignment state between the transferred substrate W and the transferred substrate G can be checked by using the alignment laser irradiated to each of the transferred substrate W and the transferred substrate G, and then when each alignment is When the state is defective, the alignment state can be adjusted. Therefore, the process time can be shortened by adjusting the alignment state of each of the transferred substrate G and the transferred substrate W at the same time.

In addition, in the case of adjusting the alignment state of each of the transferred substrate G and the transferred substrate W at the same time, the operation of positioning the transferred substrate G on the first stage 110 and the transferred substrate G can also be performed at the same time. The operation of adsorbing the substrate G to the second stage 120. Therefore, the operation time for placing the substrate on the stage can be shortened.

Thereafter, the transfer substrate W may be irradiated with the laser beam while the laser irradiation unit 130 that irradiates the laser beam is moved. That is, the laser irradiation unit 130 can be moved in a state in which the positions of the transferred substrate W and the transferred substrate G are fixed because the first stage 110 and the second stage 120 do not move, so as to use The laser beam scans and transfers the substrate W. Therefore, after the alignment state of each of the transferred substrate G and the transferred substrate W is adjusted, the stage can be moved to prevent the alignment between the transferred substrate G and the transferred substrate W from being distorted.

Here, a plurality of wafers may be provided and arranged on the transfer substrate W in an array type. When a laser beam having a wire beam shape is introduced to the shape adjuster 133, the shape adjuster 133 can convert the shape of the wire beam into the shape of a plurality of points spaced apart from each other in the extending direction (or left and right direction) of the wire beam, and use The laser beam having the shape of a plurality of points irradiates the transfer substrate W. That is, the laser beam can be irradiated corresponding to the position of the wafer spaced apart in the left-right direction. Therefore, when the laser irradiation unit 130 linearly moves in a direction (or a front-rear direction) crossing the extending direction of the wire beam, all the wafers arranged in an array type can be irradiated with the laser beam.

In addition, the laser generator 131 may appropriately irradiate the transfer substrate W with a laser beam until the time when the laser beam reaches each of the wafers spaced apart from each other in the front-to-rear direction.

For example, a laser beam can be generated according to a predetermined frequency. Therefore, when the laser beam scans and shifts the substrate W, the position where the wafer is provided can be irradiated with the laser beam, but the position where the wafer is not provided can be irradiated without the laser beam. Therefore, the laser beam can be used to irradiate only the position where the wafer is provided.

In addition, a circuit breaker (not shown in the figure) may be provided on the moving path of the laser beam. Therefore, since the circuit breaker continuously performs the operation of opening and closing the moving path of the laser beam in the state in which the laser beam is generated from the laser generator 131, when the laser beam scans and shifts the substrate W, the laser beam It may be irradiated at the location where the wafer is provided, and may not be irradiated at the location where the wafer is not provided. Therefore, the laser beam can be irradiated only at the position where the wafer is provided.

Here, since the entire laser irradiating unit 130 is moved to irradiate the laser beam, it is possible to irradiate the entire area of the transfer substrate W with the equal-focused laser beam having the same amount of light. Therefore, it is possible to prevent the feature in which some wafers are not separated from the transfer substrate W due to the different light amount and focus of the laser beam.

The laser beam irradiated to the transfer substrate W can drop the wafer set on the transfer substrate W and transfer the wafer to the transferred substrate G. That is, the laser beam can apply thermal energy to the attachment surface between the wafer and the transfer substrate W to separate the wafer from the transfer substrate W. Therefore, the wafer can be separated from the transferred substrate W and dropped onto the transferred substrate G. Since the alignment state of each of the transferred substrate G and the transferred substrate W is adjusted, the wafer separated from the transferred substrate W can accurately fall to the predetermined position of the transferred substrate G.

Here, a thin film layer (not shown in the figure) made of a bonding material may be provided on the top surface of the transferred substrate G so that the transferred substrate G and the wafer are in contact with each other and electrically connected to each other. For example, the thin film layer made of the bonding material may be an anisotropically conductive film (ACF) layer. The thin film layer made of the bonding material may include a plurality of conductive particles distributed therein, and have predetermined adhesive properties. Therefore, the wafer separated from the transferred substrate W and dropped can be attached to the top surface of the transferred substrate G.

When all the wafers set on the transfer substrate W are transferred to the transferred substrate G, the transferred substrate G can be transported to a place for performing subsequent procedures. In the subsequent procedure, heat is applied to the attachment surface between the transferred substrate G and the wafer transferred to the transferred substrate G by using a laser beam. Therefore, the wafer and the thin film layer made of the bonding material provided on the transferred substrate G can be attached to each other and electrically connected to each other.

As described above, when the transfer program is executed, in a state in which the transferred substrate W and the transferred substrate G are fixed, the irradiation position of the laser beam can be precisely adjusted by using the moving unit 140. Therefore, during the transfer process, the positions of the transferred substrate W and the transferred substrate G can be prevented from changing as the first stage 110 or the second stage 120 moves. Therefore, since the wafer accurately drops to a predetermined position on the transferred substrate G, the transfer procedure can improve accuracy.

According to an exemplary embodiment, when the transfer procedure is performed, the irradiation position of the laser beam can be accurately adjusted so that the wafer accurately falls at the preset position. Therefore, the transfer procedure can have improved accuracy to improve the quality of the products manufactured through the procedure.

In addition, according to exemplary embodiments, the stage for supporting the transferred substrate and the stage for supporting the transferred substrate may be driven separately. Therefore, the time for transporting the transferred substrate and the transferred substrate to the position for executing the transfer process can be shortened to improve the process efficiency.

Although the preferred embodiments of the present invention have been described in the detailed description of the embodiments, various changes and modifications can be made to the present invention without departing from the scope and spirit of the present invention defined by the appended claims. Therefore, the scope of the present invention is defined not by the detailed description of the present invention but by the appended claims, and all differences within the scope will be construed as being included in the present invention.

100: Transfer equipment 110: First stage 120: second stage 130: Laser irradiation unit 131: Laser generator 132: Angle adjuster 133: shape adjuster 133a: Mask component 133b: Select component 134: Shell 140: mobile unit 141: Path component 142: Moving component 143: Supporting member 150: the first drive unit 151: The first front and rear rails 152: The first front and rear drive member 153: The first left and right rails 154: The first left and right drive member 155: The first vertical drive member 160: second drive unit 161: second front and rear rails 162: second front and rear drive member 163: The second left and right rails 180: shooting unit 190: Alignment unit G: substrate to be transferred h1: pattern hole h2: Align the holes S110, S120, S130, S140: process W: Transfer substrate

The exemplary embodiments can be understood in more detail by reading the following description in conjunction with the accompanying drawings. In the accompanying drawings: FIG. 1 is a perspective view showing a transfer device according to an exemplary embodiment. FIG. 2 is a perspective view showing the structure of a first stage and a first driving unit according to an exemplary embodiment. 3 is a perspective view showing the structure of a second stage and a second driving unit according to an exemplary embodiment. 4 is a cross-sectional view showing the structure of a laser irradiation unit according to an exemplary embodiment. FIG. 5 is a perspective view showing the structure of a shape adjuster according to an exemplary embodiment. FIG. 6 is a view showing a structure for adjusting the alignment of a transfer substrate according to an exemplary embodiment. FIG. 7 is a view showing the structure of a laser irradiation unit and a mobile unit according to an exemplary embodiment. Fig. 8 is a flowchart showing a migration method according to an exemplary embodiment.

100: Transfer equipment

110: First stage

130: Laser irradiation unit

140: mobile unit

150: the first drive unit

160: second drive unit

Claims (16)

A transfer device that transfers the wafer set on the transfer substrate to the substrate to be transferred (hereinafter, referred to as the transferred substrate), including: The first stage is configured to support the transferred substrate; A second stage configured to support the transfer substrate so that the transfer substrate faces the transferred substrate and is spaced apart from the transferred substrate; A laser irradiation unit, at least a part of which is spaced apart from the second stage in the direction in which the transfer substrate and the transferred substrate face each other, so that the laser beam irradiates the transfer Substrate; and The moving unit is configured to support the laser irradiation unit and move the laser irradiation unit in a state where the laser beam is irradiated. The transfer device according to claim 1, wherein the mobile unit includes: A path member extending in a direction intersecting the direction in which the transfer substrate and the transferred substrate face each other; and The moving member is connected to the laser irradiation unit and installed to be able to move linearly along the extending direction of the path member. The transfer device as described in claim 1, further including: The first driving unit is configured to support the first stage so as to move the first stage in multiple directions; and The second driving unit is configured to support the second stage so as to move the second stage in multiple directions independently of the first stage. The transfer device according to claim 1, wherein the laser irradiation unit includes: A laser generator configured to generate a laser beam; An angle adjuster arranged between the laser generator and the second stage to adjust the irradiation direction of the laser beam; A shape adjuster arranged between the laser generator and the angle adjuster to adjust the shape of the laser beam irradiated to the transfer substrate; and The housing is configured to support the laser generator, the angle adjuster, and the shape adjuster, and can be moved by the moving unit. The transfer device according to claim 4, wherein the shape adjuster includes: The mask member has a plurality of pattern holes; and The selection member is configured to support the mask member and move the mask member in a plurality of directions to select a pattern hole through which the laser beam passes from among the plurality of pattern holes. The transfer device according to claim 5, wherein the shield member is further provided with alignment holes, and The transfer device also includes: A photographing unit configured to photograph the shape and position of the laser beam passing through the alignment hole, and the shape and position are irradiated to at least one of the transfer substrate and the transferred substrate One; and The alignment unit is connected to the photographing unit to adjust the transfer substrate and the transferred substrate according to the irradiated shape and position of the laser beam passing through the alignment hole The alignment status of each of them. The transfer device according to claim 6, wherein the second carrier is moved in and out of the space between the laser irradiation unit and the first carrier, and The alignment unit adjusts the alignment state of the transferred substrate, and then adjusts the alignment state of the transferred substrate. The transfer device according to claim 6, wherein the area of the transferred substrate is greater than the area of the transferred substrate, and A part of the laser beam passing through the alignment hole is irradiated to the transfer substrate, and another part of the laser beam is irradiated to the transferred substrate through the second stage. A transfer method including: The substrate to be transferred is supported by the first stage; Supporting the transfer substrate provided with the wafer by the second stage, and arranging the transfer substrate to face the transferred substrate; While moving the laser irradiation unit configured to irradiate the laser beam, irradiate the laser beam to the transfer substrate; and The wafer set to the transfer substrate is dropped by using the laser beam to transfer the wafer to the transferred substrate. The transfer method according to claim 9, wherein the wafers are provided in multiple, and the multiple wafers are arranged in an array type, and Irradiating the laser beam while moving the laser irradiating unit includes: Generate a laser beam; and The laser irradiation unit is linearly moved in one direction. The transfer method according to claim 10, wherein linearly moving the laser irradiation unit includes appropriately irradiating the laser beam to the transfer substrate until the moving in the one direction The time when the laser beam reaches each of the wafers spaced apart from each other in the one direction. The transfer method according to claim 9, wherein supporting the transferred substrate by the first stage includes: Irradiate the alignment laser to the transferred substrate; and According to at least one of the irradiation shape and the irradiation position of the alignment laser, the alignment state of the transferred substrate is adjusted by moving the first stage, and Supporting the transfer substrate provided with the wafer by the second stage includes: Irradiating the alignment laser to the transfer substrate provided with the wafer; and According to at least one of the irradiation shape and the irradiation position of the alignment laser, the alignment state of the transfer substrate is adjusted by moving the second stage. The transfer method according to claim 12, wherein adjusting the alignment state according to the irradiation shape and the irradiation position of the alignment laser includes adjusting the transferred substrate or the transferred substrate The horizontal alignment status. The transfer method according to claim 12, wherein marks are formed in the transferred substrate and the transferred substrate, and Adjusting the alignment state according to the irradiation shape and the irradiation position of the alignment laser includes adjusting the plane alignment state of the transfer substrate or the transferred substrate, so that the mark is set at and At a position corresponding to the irradiation position of the alignment laser. The transfer method according to claim 12, wherein supporting the transfer substrate provided with the wafer by the second stage includes moving the second stage to be set in the laser irradiation unit Between and the first carrier, and Adjusting the alignment state of the transferred substrate is performed before moving the second stage to be set between the first stage and the second stage. The transfer method according to claim 12, wherein the irradiating the alignment laser includes: Generate multiple alignment lasers; and A part of the plurality of alignment lasers is irradiated to the transfer substrate, and another part is irradiated to the transferred substrate through the second stage.

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