TW202112196A - Soldered product manufacturing apparatus and method for manufacturing soldered product - Google Patents
Soldered product manufacturing apparatus and method for manufacturing soldered product Download PDFInfo
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Description
本發明係關於焊接製品製造裝置及焊接製品之製造方法,尤其關於抑制不需要物質附著於基板且提升氧化物的還原速度之焊接製品製造裝置及焊接製品之製造方法。 The present invention relates to a welding product manufacturing device and a welding product manufacturing method, and more particularly to a welding product manufacturing device and a welding product manufacturing method that prevents unnecessary substances from adhering to a substrate and increases the reduction rate of oxides.
形成有焊料凸塊的基板係用於使電子零件實裝於基板之迴焊步驟。將焊料膏與助焊劑混合者配置於基板上並加熱,藉此熔融並形成焊料凸塊,最後將基板整體洗淨,去除助焊劑殘渣等後乾燥,藉此而製造形成有焊料凸塊的基板(例如參照日本國專利第6274341號公報)。 The substrate on which the solder bumps are formed is a reflow step for mounting electronic components on the substrate. Place the solder paste and flux mixture on the substrate and heat it to melt and form solder bumps. Finally, the entire substrate is cleaned, flux residues are removed, and then dried to produce a substrate with solder bumps. (For example, refer to Japanese Patent No. 6274341).
形成焊料凸塊時,若使用混合了助焊劑之焊料膏,則去除助焊劑殘渣之洗淨較為費工。使用甲酸取代助焊劑而形成焊料凸塊時,若進行氧化膜的還原去除,則不需後洗淨,可簡化步驟。但是在藉由使用甲 酸之迴焊而形成焊料凸塊時,在加熱焊料及基板時有焊料及/或基板及/或甲酸的成分會氣化的情形,該氣化之成分(物質)會擴散並堆積於腔室內壁等,該堆積物有時會飛散並附著於基板。又,使用甲酸進行形成於焊料之氧化膜的還原去除時,到甲酸與氧化物反應為止需要處理時間,但該處理時間越短較好。 When forming solder bumps, if a solder paste mixed with flux is used, the cleaning to remove the flux residue is more labor-intensive. When using formic acid instead of flux to form solder bumps, if the oxide film is reduced and removed, post-cleaning is not required, and the steps can be simplified. But by using A When the solder bumps are formed by the reflow of acid, the components of the solder and/or the substrate and/or formic acid may vaporize when the solder and the substrate are heated, and the vaporized components (substances) will diffuse and accumulate in the chamber Such deposits may scatter and adhere to the substrate. In addition, when formic acid is used to reduce and remove the oxide film formed on the solder, processing time is required until the formic acid reacts with the oxide, but the shorter the processing time is, the better.
本揭示係鑑於上述課題而提供抑制不需要物質附著於基板且提升氧化物的還原速度之焊接製品製造裝置及焊接製品之製造方法。 In view of the above-mentioned problems, the present disclosure provides a welding product manufacturing device and a welding product manufacturing method that suppresses the adhesion of unnecessary substances to the substrate and increases the reduction rate of oxides.
為了達成上述目的,本揭示之第1態樣之焊接製品製造裝置係例如圖1所示,具備:載台13,係載置配置有焊料之基板W;蓋體16,係隔有特定距離覆蓋載置於載台13之基板W的至少上部;腔室11,係收容載台13及蓋體16;加熱部15,係加熱載置於載台13之基板W;及還原氣體供給裝置19,係將還原氧化物之還原氣體F供給於腔室11內。在此,配置於基板之焊料典型而言為完成焊料凸塊、或焊料凸塊原料之原料焊料。
In order to achieve the above-mentioned object, the soldering product manufacturing apparatus of the first aspect of the present disclosure is, for example, as shown in FIG. At least the upper part of the substrate W placed on the
藉由上述構成,因具備蓋體,故可抑制基板上的物質所生成氣化之物質凝結並附著於基板,且可抑制經加熱基板散熱至周邊,藉此,在氧化物與還原氣體反應時,可提升還原速度。 With the above-mentioned structure, the cover is provided, so that the vaporized substances generated on the substrate can be prevented from condensing and adhering to the substrate, and the heating of the substrate can be prevented from dissipating to the periphery, thereby preventing the oxide from reacting with the reducing gas. , Which can increase the speed of restoration.
又,本揭示之第2態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1態樣之焊接製品製造裝置1中,特定距離是以配置於基板W之焊料與蓋體16的最短距離所規定。
In addition, the soldering product manufacturing apparatus of the second aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the soldering
藉由上述構成,可迴避焊料接觸蓋體,可預防對焊料造成不良影響。 With the above structure, it is possible to prevent the solder from contacting the cover and prevent adverse effects on the solder.
又,本揭示之第3態樣之焊接製品製造裝置係在上述本揭示之第2態樣之焊接製品製造裝置中,最短距離構成為0.1mm至20mm。 In addition, the welded product manufacturing apparatus of the third aspect of the present disclosure is in the welded product manufacturing apparatus of the second aspect of the present disclosure, and the shortest distance is configured to be 0.1 mm to 20 mm.
藉由上述構成,可提升基板及焊料中所生成氧化物與還原氣體作用的還原速度,可縮短處理時間並提高生產性。 With the above structure, the reduction rate of the oxides generated in the substrate and the solder and the reducing gas can be increased, the processing time can be shortened, and the productivity can be improved.
又,本揭示之第4態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1態樣之焊接製品製造裝置1中,特定距離是以前述基板與前述基板上方部分之前述蓋體的最短距離所規定。
In addition, the welding product manufacturing apparatus of the fourth aspect of the present disclosure is, for example, as shown in FIG. 1. In the welding
藉由上述構成,可抑制腔室的大型化。 With the above configuration, it is possible to suppress an increase in the size of the chamber.
又,本揭示之第5態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1至4態樣中任一態樣之焊接製品製造裝置1中,加熱部15係以藉由加熱載置有基板W之載台13而加熱基板W之方式構成;蓋體16係以產生來自載台13的熱傳達之方式與載台13接觸並構成。
In addition, the welding product manufacturing apparatus of the fifth aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the welding
藉由上述構成,蓋體接觸至加熱之載台,故蓋體溫度提升至物質的凝結溫度以上,可抑制物質在蓋體凝結。 With the above-mentioned structure, the lid body contacts the heated stage, so the lid body temperature is raised above the condensation temperature of the substance, which can inhibit the substance from condensing in the lid body.
又,本揭示之第6態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第5態樣之焊接製品製造裝置1中,蓋體16係以包圍載置於載台13之基板W周圍的空間之方式構成。
In addition, the welding product manufacturing apparatus of the sixth aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the welding
藉由上述構成,可抑制蓋體所包圍空間的散熱,可提升氧化物與還原氣體反應時的還原速度。 With the above configuration, the heat dissipation in the space surrounded by the cover can be suppressed, and the reduction rate when the oxide reacts with the reducing gas can be increased.
又,本揭示之第7態樣之焊接製品製造裝置係例如圖4所示,為上述本揭示之第1至6態樣中任一態樣之焊接製品製造裝置中,蓋體16B係具有網部16h,該網部16h係使基板上的物質所生成的氣化之物質通過,但使液化或固化的物質無法通過。
In addition, the welding product manufacturing apparatus of the seventh aspect of the present disclosure is, for example, as shown in FIG. 4. In the welding product manufacturing apparatus of any one of the first to sixth aspects of the present disclosure, the
藉由上述構成,氣化之物質透過網部釋出至蓋體外,但液化或固化的物質不會侵入蓋體內側,可抑制凝結物質附著於基板。 With the above structure, the vaporized substance is released to the outside of the cover through the mesh part, but the liquefied or solidified substance does not invade the inside of the cover, and the adhesion of the condensed substance to the substrate can be suppressed.
又,本揭示之第8態樣之焊接製品之製造方法係例如參照圖1及圖2所示,為使用上述本揭示之第1至7態樣中任一態樣之焊接製品製造裝置1而製造焊接製品之方法,並具有下述步驟:載置步驟(S1),係使配置有焊料之基板W載置於載台13;覆蓋步驟(S2),係從焊料隔開距離地以蓋體16覆蓋載置於載台13之基板W的至少上部;加熱步驟(S3),係在覆蓋步驟(S2)後加熱基板W;及還原氣體供給步驟(S4),係於腔室11內供給還原氣體F。
In addition, the manufacturing method of the welded product of the eighth aspect of the present disclosure is shown, for example, with reference to FIGS. 1 and 2, which uses the welded
藉由上述構成可製造焊接製品,該焊接製品中,由基板上的物質所生成的物質不會附著於基板,且可提升製造時的還原速度及生產性。 With the above configuration, a welded product can be manufactured. In the welded product, the substance generated from the substance on the substrate does not adhere to the substrate, and the reduction speed and productivity during manufacturing can be improved.
又,本揭示之第9態樣之焊接製品之製造方法係例如參照圖1及圖2所示,在上述本揭示之第8態樣之焊接製品之製造方法中,覆蓋步驟(S2)為使焊料至蓋體16為止的最短部分之距離構成為0.1mm至20mm。
In addition, the manufacturing method of the welded product of the ninth aspect of the present disclosure is shown, for example, with reference to FIGS. 1 and 2. In the manufacturing method of the welded product of the eighth aspect of the present disclosure, the covering step (S2) is The distance from the solder to the shortest part of the
藉由上述構成,可抑制基板散熱至周邊,可提升氧化物與還原氣體反應時的還原速度。 With the above structure, the substrate can be prevented from dissipating heat to the periphery, and the reduction rate when the oxide reacts with the reducing gas can be increased.
根據本發明,可抑制基板上的物質所生成的氣化之物質凝結並附著於基板,並可提升氧化物與還原氣體反應時的還原速度。 According to the present invention, the vaporized substance generated by the substance on the substrate can be prevented from being condensed and attached to the substrate, and the reduction rate when the oxide reacts with the reducing gas can be increased.
1:焊接製品製造裝置 1: Welding product manufacturing equipment
1A:焊接製品製造裝置 1A: Welding product manufacturing equipment
11:腔室 11: Chamber
11f:甲酸導入口 11f: Formic acid inlet
13:載台 13: Stage
13A:載台 13A: Stage
13e:高緣 13e: high margin
13t:載置面 13t: Mounting surface
15:加熱部 15: Heating section
16:蓋體 16: Lid
16A:蓋體 16A: Lid
16B:蓋體 16B: Lid
16h:網部 16h: Net department
16s:側板 16s: side panel
16t:頂板 16t: roof
19:還原氣體供給裝置 19: Reducing gas supply device
19p:配管 19p: Piping
19v:控制閥 19v: control valve
50:控制裝置 50: control device
F:還原氣體 F: reducing gas
P:製品 P: Products
S:焊料凸塊 S: Solder bump
W:基板 W: substrate
圖1係一實施型態之焊接製品製造裝置的概略構成圖。 Fig. 1 is a schematic configuration diagram of an embodiment of a welded product manufacturing apparatus.
圖2係說明焊接製品之製造順序的流程圖。 Figure 2 is a flowchart illustrating the manufacturing sequence of welded products.
圖3係一實施型態之變形例之焊接製品製造裝置的概略構成圖。 Fig. 3 is a schematic configuration diagram of a welded product manufacturing apparatus according to a modification of the embodiment.
圖4係表示蓋體之變形例之概略構成的垂直剖面圖,該蓋體係構成一實施型態之焊接製品製造裝置。 4 is a vertical cross-sectional view showing a schematic configuration of a modification of the cover body, and the cover system constitutes an embodiment of a welded product manufacturing device.
本申請係根據2019年7月26日於日本國所申請日本特願2019-138130號及2020年6月4日於日本國所申請日本特願2020-097848號,並將該等內容援用於本申請。 This application is based on Japanese Patent Application No. 2019-138130 filed in Japan on July 26, 2019 and Japanese Patent Application No. 2020-097848 filed in Japan on June 4, 2020, and these contents are used in this application. Application.
又,本發明可藉由以下詳細說明而完全理解。本發明之進一步應用範圍亦可由以下詳細說明而自明。但該詳細說明及特定實例係本發明之較佳實施型態,其記載目的是用於說明。所屬技術領域中具有通常知識者可由該詳細說明在本發明之精神及範圍內進行各種變更、改變。申請人欲主張所記載實施型態其目的皆非揭示於公眾,所揭示改變、代替案中或許有文言上不包含於申請專利範圍內的部分,但該等皆為均等論下之發明的一部 分。以下參照圖面說明各實施型態。又,各圖中互相相同或相當之構件係附以相同或類似的符號並省略重複說明。 In addition, the present invention can be fully understood by the following detailed description. The further application scope of the present invention can also be self-evident from the following detailed description. However, the detailed description and specific examples are preferred embodiments of the present invention, and the purpose of the description is to illustrate. Those with ordinary knowledge in the technical field can make various changes and changes within the spirit and scope of the present invention from the detailed description. The applicant wants to claim that the purpose of the recorded implementation types is not to be disclosed to the public, and there may be parts in the disclosed changes and substitutions that are not included in the scope of the patent application, but these are all aspects of the invention under the theory of equality. unit Minute. The following describes each implementation type with reference to the drawings. In addition, components that are the same or equivalent to each other in each figure are denoted by the same or similar symbols, and repeated descriptions are omitted.
首先參照圖1說明一實施型態之焊接製品製造裝置1。圖1係焊接製品製造裝置1的概略構成圖。焊接製品製造裝置1係以可利用作為焊料凸塊形成裝置且可利用作為共焊接裝置之方式構成。焊料凸塊形成裝置係將配置於基板W上的原料焊料形成為表面成為半球狀之完成焊料凸塊S(以下稱為「焊料凸塊S」),該完成焊料凸塊係適用於將電子零件實裝於基板W時之迴焊步驟。於本說明書中,原料焊料是指成為完成焊料凸塊S前之非半球狀焊料,典型而言為適量分配有焊料膏者。使用作為原料焊料之焊料典型而言為鉛與鋅或錫等的化合物。在本實施型態中,焊料凸塊形成裝置可在不使用助焊劑下於基板W上形成焊料凸塊S。另一方面,焊接裝置係將於基板W上配置之完成焊料凸塊S配置於電子零件,並在迴焊步驟中使焊料凸塊S熔融,使電子零件焊接於基板W。在焊料凸塊形成裝置製造之附焊料凸塊S之基板W(形成有焊料凸塊S之基板W)、及在焊接裝置製造之實裝電子零件之基板W(於基板W上的焊料凸塊S接合電子零件之已接合基板)分別為焊接製品一形態。焊接製品製造裝置1可視為焊料凸塊形成裝置與焊接裝置的總稱。以下說明將焊接製品製造裝置1利用作為焊料凸塊形成裝置。焊接製品製造裝置1係具備腔室11、載置有基板W之載台13、加熱基板W之加熱器15、覆蓋基板W之蓋體16、及於腔室11內供給甲酸氣體F之甲酸供給部19。
First, referring to FIG. 1, an embodiment of a welded
腔室11係形成有進行將配置於基板W上之原料焊料形成為焊料凸塊S之處理的空間。腔室11構成為可承受內部與外部的壓力差
之構造。以製造容易度之觀點來看,腔室11典型而言形成為長方體狀,以耐壓之觀點來看,外周壁可形成為曲面。在腔室11中形成導入甲酸氣體F之甲酸導入口11f。在本實施型態中,甲酸導入口11f形成於腔室11上部。又,腔室11中設置有擋門(圖中未表示),該擋門係使開口(圖中未表示)開閉,該開口可使具有焊料之基板W進出。
The
在本實施型態中,載台13形成為板狀並配置於於腔室11內。載台13中,以載置穩定性之觀點來看,載置基板W之載置面13t係形成為平坦面。典型而言,載置面13t內面亦形成為平坦面。典型而言,載台13在腔室11內係以載置面13t成為水平之方式設置。但是,載台13在所載置基板W之可載置範圍(在所載置基板W不會滑落之範圍內)中可相對於水平傾斜(載置面13t擴展方向具有水平方向成分及鉛直方向成分)。載台13為可將加熱器15之發熱傳達至基板W之材料所形成,典型而言係以石墨形成,但可以高熱傳導率之金屬形成。在此,由加熱器15透過載台13傳達至基板W之熱量係可使溫度提升至使配置於基板W上之原料焊料熔融的溫度,載台13典型而言係構成為可提升至高於配置於基板W上之原料焊料的熔點。載台13的載置面13t面積形成為大於基板W。
In this embodiment, the
在本實施型態中,加熱器15係配置於載台13下方之載台13之接近位置的腔室11內。在本實施型態中,加熱器15為複數支紅外線燈(以下稱為「IR燈」)隔有適當間隔沿載台13內面配置而構成。加熱器15係透過載台13加熱載置於載台13之基板W,相當於加熱部。又,在構成加熱器15之複數支IR燈之間隙可設置梳齒狀冷卻部,該梳齒狀冷卻部係與載台13內面接觸,藉此冷卻載台13(更進一步而言為基板W),該冷卻
部係以可相對於載台13進行接近(冷卻時)及分離(非冷卻時)來回移動之方式構成。
In this embodiment, the
為了預防不需要物質附著於基板W等,蓋體16係在配置有原料焊料之基板W載置於載台13時覆蓋有基板W。又,蓋體16係適當覆蓋基板W,藉此可提升甲酸氣體F所進行氧化物的還原速度。在本實施型態中,蓋體16係以可一體覆蓋基板W整體之方式,使平視中的大小形成為包含基板W之大小。換言之,蓋體16可覆蓋複數配置於基板W之原料焊料。在本實施型態中,蓋體16係具有形成為矩形板狀之頂板16t、及由頂板16t四邊相對於頂板16t直角延伸之側板16s。四個側板16s分別相對於頂板16t在相同方向以相同長度延伸。側板16s之長度係在側板16s與載台13接觸時頂板16t不會接觸基板W及原料焊料之範圍內盡可能形成較短。此時,具有原料焊料之基板W中的原料焊料與頂板16t的最短距離(典型而言為發揮所求功能之範圍中,焊料與蓋體16的距離成為最短部分的距離)相當於特定距離。如上述,在本實施型態中,蓋體16係以與載台13協同作用並完全覆蓋基板W之方式構成,藉此可強化基板W的保護。即使以蓋體16與載台13完全覆蓋基板W,於腔室11內供給甲酸氣體F時,因甲酸氣體F的特性,甲酸氣體F可由蓋體16與載台13的境界侵入蓋體16內部。但是,藉由僅覆蓋基板W上部而可保護基板W不受不需要物質的影響時,可由蓋體16取除側板16s,使甲酸氣體F容易到達基板W的方式為之。另一方面,以藉由甲酸氣體F提升氧化物的還原速度之觀點來看,為了抑制基板W周圍溫度降低,較佳為使用具有側板16s之蓋體16包圍基板W周圍的空間。基板W中的原料焊料與頂板16t的最短距
離較佳為0.1mm至20mm,以藉由甲酸氣體F提升氧化物的還原速度之觀點來看,更佳為2.0mm以下,又更佳為1.5mm以下,另一方面,以抑制裝置製造困難性之觀點來看更佳為0.5mm以上,又更佳為1.0mm。基板W中的原料焊料與頂板16t的最短距離會有因於基板W複數配置之原料焊料而異的情形,較佳為分別的最短距離為0.1mm至20mm之範圍。蓋體16較佳為以高熱傳導率材料形成,典型而言為以金屬形成。
In order to prevent unnecessary substances from adhering to the substrate W and the like, the
甲酸供給部19係具有甲酸源(圖中未表示)、將甲酸氣體F由甲酸源導入腔室11之配管19p、及配設於配管19p之控制閥19v。甲酸源(圖中未表示)係具有氣化甲酸之氣化部,並以可將氣化甲酸F供給於腔室11內之方式構成。配管19p係與甲酸導入口11f連接。甲酸供給部19係以在打開控制閥19v時使氣化甲酸F供給於腔室內,在關閉控制閥19v時中止甲酸氣體F對腔室11內的供給之方式構成。甲酸氣體F係供給於還原溫度之基板W或焊料,藉此可還原基板W或焊料的氧化物,相當於還原氣體。又,甲酸供給部19係供給作為還原氣體之甲酸氣體F,相當於還原氣體供給裝置。在焊接製品製造裝置1中,藉由於還原溫度之基板W或焊料供給甲酸氣體F,可在不使用助焊劑下還原基板W或焊料的氧化物。
The formic
焊接製品製造裝置1係進一步具備可控制焊接製品製造裝置1的動作之控制裝置50。控制裝置50係以有線或無線的方式與加熱器15連接,並以透過變更加熱器15之ON-OFF及輸出而可加熱載台13之方式構成。又,控制裝置50係以有線或無線的方式與甲酸供給部19連接,
並以通過控制閥19v之開閉動作而可使甲酸氣體F供給於腔室11之方式構成。
The welded
接著參照圖2說明使用焊接製品製造裝置1之焊接製品之製造方法(在此為焊料凸塊形成基板之製造方法)。圖2為表示焊料凸塊形成基板(焊接製品)之製造順序的流程圖。以下,在焊料凸塊形成基板之製造方法說明中提及焊接製品製造裝置1之構成時,係適當地參照圖1。以下使用焊接製品製造裝置1之焊料凸塊形成基板之製造方法的說明亦是焊接製品製造裝置1的作用說明。
Next, a method of manufacturing a soldered product using the soldered product manufacturing device 1 (here, a method of manufacturing a solder bump forming substrate) will be described with reference to FIG. 2. Fig. 2 is a flowchart showing the manufacturing procedure of a solder bump forming substrate (solder product). Hereinafter, when referring to the structure of the soldering
製造焊料凸塊形成基板時,首先使配置有原料焊料之基板W進入腔室11內,並載至於載台13之載置面13t(S1:載置步驟)。配置有原料焊料之基板W載置於腔室11內之載台13後,以覆蓋配置有原料焊料之基板W之方式,使蓋體16配置於載台13上(S2:覆蓋步驟)。此時,以原料焊料及基板W不與蓋體16接觸之方式使蓋體16配置於載台13上。又,配置於基板W之各原料焊料與蓋體16的最短距離分別成為特定距離。在此,特定距離為0.1mm至20mm。配置蓋體16後,控制裝置50係使加熱器15成為ON,將載台13及具有原料焊料之基板W加熱至還原溫度(S3)。還原溫度低於配置於基板W上之原料焊料的熔點,且適合使原料焊料及基板W的氧化膜以甲酸F進行還原處理。若藉由加熱器15加熱載台13,則熱也會傳達至與載台13接觸之蓋體16,蓋體16也會被加熱。接著,蓋體16及載台13所包圍內部空間會成為高溫。
When manufacturing the solder bump formation substrate, first, the substrate W on which the raw material solder is placed is put into the
接著,控制裝置50使載台13溫度提升至還原溫度後,打開控制閥19v並於腔室11內供給甲酸氣體F(S4:還原氣體供給步驟)。藉
由於腔室11內供給甲酸氣體F而進行還原處理,該係還原處理係使形成於原料焊料或基板W表面等的氧化膜藉由甲酸F而還原。此時,配置於基板W之各原料焊料與蓋體16的最短距離成為特定距離,故可提升藉由甲酸氣體F還原氧化膜的速度。該還原速度的提升原因推測為:因原料焊料與蓋體16的最短距離成為特定距離,基板W周圍的空間變為較小而抑制散熱;及/或甲酸分子與氧化膜的衝突次數增加。使用甲酸F去除氧化膜,藉此可不使用助焊劑,之後可省略洗淨助焊劑之步驟。又,在載台13溫度提升至還原溫度前於腔室11內供給甲酸氣體F亦可去除氧化膜時,還原氣體供給步驟(S4)係可在加熱至還原溫度之步驟(S3)前進行,或與加熱至還原溫度之步驟(S3)並行。
Next, after the
甲酸F之還原處理結束後,控制裝置50提升加熱器15的輸出至超過原料焊料熔點之特定溫度的熔融溫度,並加熱載台13及原料焊接基板W(S5)。藉此,基板W上的原料焊料會熔融形成半球狀。原料焊料形成半球狀後,控制裝置50係使加熱器15之加熱停止,並由腔室11排出甲酸氣體F,冷卻具有半球狀焊料之基板W(S6)。又,加熱至還原溫度之步驟(S3)後,繼續加熱至加熱器15停止加熱前的熔融溫度,其間相當於加熱步驟。接著,在加熱器15停止加熱後,藉由冷卻使基板W上的半球狀焊料固化,而形成完成焊料凸塊S。其後,將形成有焊料凸塊S之基板W(焊接製品一形態,以下稱為「製品P」)由腔室11取出(S7)。藉此獲得具有焊料凸塊S之基板W,保險起見係判斷是否適當地形成焊料凸塊S(S8)。未形成焊料凸塊S時,回到載置步驟(S1)並再次形成焊料凸塊S,再進行上述流程。另一方面,形成有焊料凸塊S時,結束焊料凸塊形成基板(製品P)
之製造。藉此,在一連串步驟中製造焊料凸塊形成基板(製品P),焊料凸塊形成基板(製品P)係送至後步驟。接著,要另外製造焊料凸塊形成基板(製品P)時,係重複上述流程。
After the reduction process of formic acid F is completed, the
上述流程中,在將原料焊料及基板W加熱至還原溫度(S3)、供給甲酸氣體F(S4)、視需要之加熱至熔融溫度時(S5)之中,原料焊料及/或基板W的成分一部分會產生氣化物質、及/或其與甲酸化合的物質(以下將該等稱為「氣化物質」)。氣化物質會於腔室11內擴散。接著,原料焊料熔融形成半球狀,停止加熱器15的加熱,降低腔室11內之溫度,則氣化物質會液化或固化(以下稱為「凝結」)。凝結之氣化物質(前述說明中稱為不需要物質者,以下稱為「凝結物質」)會附著、堆積於腔室11內壁等。在焊料凸塊形成基板之製造過程中,例如於腔室11內供給甲酸氣體F時,至此堆積於腔室11內壁等之凝結物質會飛散。在本實施型態中,由原料焊料形成焊料凸塊S時,係以蓋體16覆蓋配置有原料焊料之基板W,故即使凝結物質在腔室11內飛散時,也可預防凝結物質附著於基板W等。又,將製品P由腔室11取出前,腔室11內之溫度會降低並產生凝結物質,經加熱載台13及蓋體16內部雖然降低至焊料固化溫度,但依然為高溫狀態,可抑制氣化物質凝結。
In the above process, when the raw material solder and the substrate W are heated to the reduction temperature (S3), the formic acid gas F (S4) is supplied, and the melting temperature is optionally heated (S5), the composition of the raw material solder and/or the substrate W Some produce vaporized substances and/or substances that combine with formic acid (hereinafter referred to as "vaporized substances"). The vaporized substance will diffuse in the
上述焊料凸塊形成基板之製造方法所製造焊料凸塊形成基板(製品P)可使用作為焊接電子零件之對象。於焊料凸塊形成基板(製品P)焊接電子零件,藉此可製造焊接製品一形態之電子零件實裝基板(已接合基板)。接著,如前述,焊接製品製造裝置1可利用作為焊接裝置,故可製造電子零件實裝基板。焊接製品製造裝置1即便是在利用作為焊接裝置時,
與利用作為上述焊料凸塊形成裝置時的構成相同,故可共用大部分上述焊料凸塊形成裝置之說明。將焊接製品製造裝置1利用作為焊接裝置時,以上述焊料凸塊形成裝置之說明來看相異處如下。焊接裝置中,腔室11係形成一空間,該空間係進行使配置於基板W上之焊料凸塊S熔融並於基板W焊接電子零件之處理。由加熱器15透過載台13傳達至基板W之熱量係可將溫度提升至可使配置於基板W上之焊料凸塊S熔融的溫度。蓋體16中,配置有電子零件之焊料凸塊S與蓋體16的最短距離成為前述特定距離。又,電子零件實裝基板(焊接製品)之製造方法基本上可適用圖2所示流程,但以下為相異處。在載置步驟(S1)中,於配置有焊料凸塊S之基板W配置(供給)電子零件,並將其載置於腔室11內之載台13。在步驟(S7)中,從腔室11取出之焊接製品為於基板W上的焊料緊黏電子零件者(電子零件實裝基板)。在步驟(S8)中,判斷電子零件是否適當地焊接於基板W,未焊接時則回到載置步驟(S1),焊接時則結束電子零件實裝基板(焊接製品)之製造。利用焊接裝置之電子零件實裝基板(焊接製品)之製造方法中,以蓋體16覆蓋基板W並進行氧化膜之還原處理(S3-S4),藉此可提升還原速度。
The solder bump formation substrate (product P) manufactured by the above-mentioned manufacturing method of the solder bump formation substrate can be used as an object for soldering electronic parts. By soldering electronic components on the solder bump formation substrate (product P), the electronic component mounting substrate (bonded substrate) of one form of soldered product can be manufactured. Next, as described above, the soldered
如以上說明,根據本實施型態之焊接製品製造裝置1係具備蓋體16,故即使在凝結物質於腔室11內飛散時,也可預防凝結物質附著於基板W等。又,蓋體16與載台13接觸並產生載台13往蓋體16之熱傳達,故可將以載台13及蓋體16包圍之空間保持為高溫狀態,可抑制氣化物質在蓋體16周邊凝結,可抑制凝結物質堆積於蓋體16。又,使基板W上之焊料與覆蓋基板W之蓋體16的最短距離成為特定距離,藉此可提升使用甲酸氣體F之氧化膜的還原處理時的還原速度。又,根據本實施型
態之焊料凸塊形成基板之製造方法,可製造凝結物質不會附著於基板W等之製品P,並可省略後洗淨。又,根據本實施型態之焊接製品之製造方法,可提升使用甲酸氣體F之氧化膜的還原處理時的還原速度。
As described above, the welded
接著參照圖3說明一實施型態之變形例之焊接製品製造裝置1A。圖3為焊接製品製造裝置1A的概略構成圖。焊接製品製造裝置1A中,主要是在以具備形成於比載置面13t低一段部分之載台13A、及以板狀構件所形成之蓋體16A來取代載台13(參照圖1)及蓋體16(參照圖1)此點與焊接製品製造裝置1(參照圖1)相異。載台13A係以載置面13t外周比載置面13t高一段之高緣13e包圍。載置面13t周圍的周緣13e之高度較佳為在配置有焊料(原料焊料或焊料凸塊S)之基板W載置於載置面13t時,在具有焊料之基板W的最高部分不會到達周緣13e頂端之範圍內,盡可能地較低。蓋體16A構成為在蓋體16(參照圖1)中僅具有頂板16t(參照圖1)而不具有側板16s(參照圖1)。焊接製品製造裝置1A之上述以外構成係與焊接製品製造裝置1(參照圖1)相同。如上述構成之焊接製品製造裝置1A中,蓋體16A為更單純之構成,故蓋體16A的開閉更為簡便。
Next, a welding product manufacturing apparatus 1A according to a modification of the embodiment will be described with reference to FIG. 3. Fig. 3 is a schematic configuration diagram of a welded product manufacturing apparatus 1A. In the welded product manufacturing apparatus 1A, the stage 13 (refer to FIG. 1) and the cover are mainly replaced by a
以上說明中,雖加熱器15配設於腔室11內,但可配置於腔室11外側(例如腔室11底面下部),並使加熱器15與載台13之間之腔室11部分為透明,藉由來自加熱器15的輻射熱而加熱載台13。
In the above description, although the
以上說明中,雖藉由甲酸進行基板W及焊料之氧化膜的還原處理,但可將甲酸以外之羧酸氣體使用作為還原氣體,並進行基板W及焊料之氧化膜的還原處理。 In the above description, the substrate W and the oxide film of the solder are reduced by formic acid, but a carboxylic acid gas other than formic acid can be used as a reducing gas to perform the reduction process of the substrate W and the oxide film of the solder.
以上說明中,蓋體16為具有頂板16t及側板16s之構成時,供給於腔室11內之甲酸氣體F或因基板W等加熱產生之氣化物質係可透過蓋體16與載台13的境界在蓋體16之內部與外部之間進出,但如圖4所示變形例之蓋體16B,可設置網部16h,透過該網部16h使氣化物質由蓋體16B內部排出至外部。網部16h係以氣化物質可通過但凝結物質無法通過之方式構成。在此,凝結物質無法通過嚴格上並非指凝結物質無法通過,而是不對製品P品質造成不量影響程度之無法通過,亦即實質上無法通過即可。網部16h典型而言係設置於頂板16t,但可取代頂板16t設置於側板16s、或設置於頂板16t及側板16s。甲酸氣體F亦可通過網部16h。因此,使用蓋體16B時,可有效預防凝結物質接觸基板W等,同時可使甲酸氣體F容易供給於基板W周圍。又,蓋體16B所具有網部16h之構成亦可適用於如圖3所示蓋體16A。
In the above description, when the
以上說明中,作為一例主要使用圖1至圖4說明本實施型態之焊接製品製造裝置及焊接製品之製造方法,但各部之構成、構造、數目、配置、形狀、材質等並不限定於上述具體例,所屬技術領域中具有通常知識者於本發明主旨內可適當選擇性採用者亦包含於本發明之範圍。 In the above description, as an example, FIGS. 1 to 4 are mainly used to describe the welding product manufacturing apparatus and the welding product manufacturing method of this embodiment, but the structure, structure, number, arrangement, shape, material, etc. of each part are not limited to the above Specific examples, those with ordinary knowledge in the technical field, which can be appropriately and selectively adopted within the spirit of the present invention, are also included in the scope of the present invention.
本說明書中所引用包括刊物、專利申請及專利之所有文獻可參照各文獻所示,並作為參照併入本案,又,其所有內容係與上述同樣限度地作為參照併入本案。 All documents cited in this specification, including publications, patent applications, and patents, can be referred to as shown in the respective documents and incorporated into this case by reference, and all their contents are incorporated into this case by reference to the same extent as above.
有關於本發明之說明(尤其有關於以下請求項)所使用名詞及相同指示語的使用,在本說明書中,在未特別說明或文脈無明顯矛盾下,應解釋為單數及複數兩者。語句「具備」、「具有」、「含有」及「包含」 在未特別說明應解釋為開放式寫法(亦即「含有但不限於」)。本說明書中,數值範圍的具陳在本說明書中,在未特別說明下,其意義僅為用以說明在該範圍內的各值之簡述法,各值係如本說明書中所分別列舉而併入。本說明書中所說明所有方法在本說明書中未特別限制或文脈無明顯矛盾下,可以各種適當順序進行。本說明書中所使用各種例子或例示的說法(例如「等」)為在未特別說明下僅是用以清楚說明本發明,而非用以限制本發明之範圍。說明書中的任何說法不應解釋為請求項所未記載之要件、或實施本發明所不可缺少者。 Regarding the description of the present invention (especially with regard to the following claims), the use of nouns and the same descriptive words should be interpreted as both singular and plural in this specification, unless otherwise specified or there is no obvious contradiction in context. The sentence "has", "has", "contains" and "contains" If it is not specifically stated, it should be interpreted as open-ended writing (that is, "including but not limited to"). In this specification, the description of the numerical range is in this specification. Unless otherwise specified, its meaning is only a brief description method to illustrate each value within the range, and each value is separately enumerated and incorporated in this specification. . All methods described in this specification can be carried out in various appropriate orders without special restrictions in this specification or without obvious contradiction in context. Various examples or exemplified statements (such as "etc.") used in this specification are only used to clearly illustrate the present invention without special instructions, and are not used to limit the scope of the present invention. Any statement in the specification should not be interpreted as a requirement not recorded in the claim, or what is indispensable for implementing the present invention.
本說明書中包括本發明人等所知用以實施本發明之最佳形態,並說明本發明之較佳實施型態。所屬技術領域中具有通常知識者在熟讀上述說明應可自明該等較佳實施型態之變形。本發明者可預期熟練相關技術者可適當適用該變形,並可以本說明書中具體說明以外之方法實施本發明。因此,根據專利法,本發明包括本說明書所附請求項所述內容的修正及均等物。又,本說明書中,在未特別限制或文脈無明顯矛盾下,所有變形中的上述要件的所有組合皆包括於本發明。 This specification includes the best mode known to the inventors for implementing the present invention, and describes the preferred mode of implementation of the present invention. Those who have ordinary knowledge in the technical field should be able to understand the modifications of the preferred implementation patterns by reading the above descriptions. The inventors of the present invention can expect that those skilled in the related art can appropriately apply this modification, and can implement the present invention in methods other than those specifically described in this specification. Therefore, according to the patent law, the present invention includes amendments and equivalents of the content described in the claims attached to this specification. In addition, in this specification, all combinations of the above-mentioned requirements in all modifications are included in the present invention without special restrictions or no obvious contradiction in context.
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JP2019-138130 | 2019-07-26 | ||
JP2019138130 | 2019-07-26 | ||
JP2020-097848 | 2020-06-04 | ||
JP2020097848A JP6860729B2 (en) | 2019-07-26 | 2020-06-04 | Soldered product manufacturing equipment and soldered product manufacturing method |
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TW202112196A true TW202112196A (en) | 2021-03-16 |
TWI843874B TWI843874B (en) | 2024-06-01 |
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