TW202112196A - Soldered product manufacturing apparatus and method for manufacturing soldered product - Google Patents

Soldered product manufacturing apparatus and method for manufacturing soldered product Download PDF

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TW202112196A
TW202112196A TW109124953A TW109124953A TW202112196A TW 202112196 A TW202112196 A TW 202112196A TW 109124953 A TW109124953 A TW 109124953A TW 109124953 A TW109124953 A TW 109124953A TW 202112196 A TW202112196 A TW 202112196A
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substrate
solder
cover
stage
product manufacturing
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TW109124953A
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TWI843874B (en
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小澤直人
松田純
丸山恵
鈴木��之
長濵正伸
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日商歐利生股份有限公司
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Abstract

The soldered product manufacturing apparatus 1 includes a stage 13 on which a substrate W having solder pieces arranged thereon is to be placed, a cover 16 for covering at least the upper portion of the substrate W placed on the stage 13 with a predetermined distance, a chamber 11 accommodating the stage 13 and cover 16, a heating unit 15 for heating the substrate W on the stage 13, and a reducing gas supply device 19 for supplying a reducing gas F. The method for manufacturing a soldered product uses the soldered product manufacturing apparatus 1, and is, providing a substrate W on a stage 13, covering the substrate W placed on the stage 13 with a cover 16, heating the substrate W, and supplying a reducing gas F into the chamber 11.

Description

焊接製品製造裝置及焊接製品之製造方法 Welded product manufacturing device and welding product manufacturing method

本發明係關於焊接製品製造裝置及焊接製品之製造方法,尤其關於抑制不需要物質附著於基板且提升氧化物的還原速度之焊接製品製造裝置及焊接製品之製造方法。 The present invention relates to a welding product manufacturing device and a welding product manufacturing method, and more particularly to a welding product manufacturing device and a welding product manufacturing method that prevents unnecessary substances from adhering to a substrate and increases the reduction rate of oxides.

形成有焊料凸塊的基板係用於使電子零件實裝於基板之迴焊步驟。將焊料膏與助焊劑混合者配置於基板上並加熱,藉此熔融並形成焊料凸塊,最後將基板整體洗淨,去除助焊劑殘渣等後乾燥,藉此而製造形成有焊料凸塊的基板(例如參照日本國專利第6274341號公報)。 The substrate on which the solder bumps are formed is a reflow step for mounting electronic components on the substrate. Place the solder paste and flux mixture on the substrate and heat it to melt and form solder bumps. Finally, the entire substrate is cleaned, flux residues are removed, and then dried to produce a substrate with solder bumps. (For example, refer to Japanese Patent No. 6274341).

形成焊料凸塊時,若使用混合了助焊劑之焊料膏,則去除助焊劑殘渣之洗淨較為費工。使用甲酸取代助焊劑而形成焊料凸塊時,若進行氧化膜的還原去除,則不需後洗淨,可簡化步驟。但是在藉由使用甲 酸之迴焊而形成焊料凸塊時,在加熱焊料及基板時有焊料及/或基板及/或甲酸的成分會氣化的情形,該氣化之成分(物質)會擴散並堆積於腔室內壁等,該堆積物有時會飛散並附著於基板。又,使用甲酸進行形成於焊料之氧化膜的還原去除時,到甲酸與氧化物反應為止需要處理時間,但該處理時間越短較好。 When forming solder bumps, if a solder paste mixed with flux is used, the cleaning to remove the flux residue is more labor-intensive. When using formic acid instead of flux to form solder bumps, if the oxide film is reduced and removed, post-cleaning is not required, and the steps can be simplified. But by using A When the solder bumps are formed by the reflow of acid, the components of the solder and/or the substrate and/or formic acid may vaporize when the solder and the substrate are heated, and the vaporized components (substances) will diffuse and accumulate in the chamber Such deposits may scatter and adhere to the substrate. In addition, when formic acid is used to reduce and remove the oxide film formed on the solder, processing time is required until the formic acid reacts with the oxide, but the shorter the processing time is, the better.

本揭示係鑑於上述課題而提供抑制不需要物質附著於基板且提升氧化物的還原速度之焊接製品製造裝置及焊接製品之製造方法。 In view of the above-mentioned problems, the present disclosure provides a welding product manufacturing device and a welding product manufacturing method that suppresses the adhesion of unnecessary substances to the substrate and increases the reduction rate of oxides.

為了達成上述目的,本揭示之第1態樣之焊接製品製造裝置係例如圖1所示,具備:載台13,係載置配置有焊料之基板W;蓋體16,係隔有特定距離覆蓋載置於載台13之基板W的至少上部;腔室11,係收容載台13及蓋體16;加熱部15,係加熱載置於載台13之基板W;及還原氣體供給裝置19,係將還原氧化物之還原氣體F供給於腔室11內。在此,配置於基板之焊料典型而言為完成焊料凸塊、或焊料凸塊原料之原料焊料。 In order to achieve the above-mentioned object, the soldering product manufacturing apparatus of the first aspect of the present disclosure is, for example, as shown in FIG. At least the upper part of the substrate W placed on the stage 13; the chamber 11 contains the stage 13 and the cover 16; the heating part 15 heats the substrate W placed on the stage 13; and the reducing gas supply device 19, The reducing gas F for reducing oxides is supplied into the chamber 11. Here, the solder disposed on the substrate is typically the raw material solder that completes the solder bump or the raw material of the solder bump.

藉由上述構成,因具備蓋體,故可抑制基板上的物質所生成氣化之物質凝結並附著於基板,且可抑制經加熱基板散熱至周邊,藉此,在氧化物與還原氣體反應時,可提升還原速度。 With the above-mentioned structure, the cover is provided, so that the vaporized substances generated on the substrate can be prevented from condensing and adhering to the substrate, and the heating of the substrate can be prevented from dissipating to the periphery, thereby preventing the oxide from reacting with the reducing gas. , Which can increase the speed of restoration.

又,本揭示之第2態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1態樣之焊接製品製造裝置1中,特定距離是以配置於基板W之焊料與蓋體16的最短距離所規定。 In addition, the soldering product manufacturing apparatus of the second aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the soldering product manufacturing apparatus 1 of the first aspect of the present disclosure, the specific distance is that the solder and the solder disposed on the substrate W The shortest distance of the cover 16 is specified.

藉由上述構成,可迴避焊料接觸蓋體,可預防對焊料造成不良影響。 With the above structure, it is possible to prevent the solder from contacting the cover and prevent adverse effects on the solder.

又,本揭示之第3態樣之焊接製品製造裝置係在上述本揭示之第2態樣之焊接製品製造裝置中,最短距離構成為0.1mm至20mm。 In addition, the welded product manufacturing apparatus of the third aspect of the present disclosure is in the welded product manufacturing apparatus of the second aspect of the present disclosure, and the shortest distance is configured to be 0.1 mm to 20 mm.

藉由上述構成,可提升基板及焊料中所生成氧化物與還原氣體作用的還原速度,可縮短處理時間並提高生產性。 With the above structure, the reduction rate of the oxides generated in the substrate and the solder and the reducing gas can be increased, the processing time can be shortened, and the productivity can be improved.

又,本揭示之第4態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1態樣之焊接製品製造裝置1中,特定距離是以前述基板與前述基板上方部分之前述蓋體的最短距離所規定。 In addition, the welding product manufacturing apparatus of the fourth aspect of the present disclosure is, for example, as shown in FIG. 1. In the welding product manufacturing apparatus 1 of the first aspect of the present disclosure, the specific distance is between the substrate and the upper portion of the substrate The shortest distance of the aforementioned cover is stipulated.

藉由上述構成,可抑制腔室的大型化。 With the above configuration, it is possible to suppress an increase in the size of the chamber.

又,本揭示之第5態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第1至4態樣中任一態樣之焊接製品製造裝置1中,加熱部15係以藉由加熱載置有基板W之載台13而加熱基板W之方式構成;蓋體16係以產生來自載台13的熱傳達之方式與載台13接觸並構成。 In addition, the welding product manufacturing apparatus of the fifth aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the welding product manufacturing apparatus 1 of any one of the first to fourth aspects of the present disclosure, the heating unit 15 is It is configured to heat the substrate W by heating the stage 13 on which the substrate W is placed; the lid 16 is configured to be in contact with the stage 13 so as to generate heat transfer from the stage 13.

藉由上述構成,蓋體接觸至加熱之載台,故蓋體溫度提升至物質的凝結溫度以上,可抑制物質在蓋體凝結。 With the above-mentioned structure, the lid body contacts the heated stage, so the lid body temperature is raised above the condensation temperature of the substance, which can inhibit the substance from condensing in the lid body.

又,本揭示之第6態樣之焊接製品製造裝置係例如參照圖1所示,在上述本揭示之第5態樣之焊接製品製造裝置1中,蓋體16係以包圍載置於載台13之基板W周圍的空間之方式構成。 In addition, the welding product manufacturing apparatus of the sixth aspect of the present disclosure is shown, for example, with reference to FIG. 1. In the welding product manufacturing apparatus 1 of the fifth aspect of the present disclosure, the cover 16 is placed on the stage to surround 13 is constructed in the manner of the space around the substrate W.

藉由上述構成,可抑制蓋體所包圍空間的散熱,可提升氧化物與還原氣體反應時的還原速度。 With the above configuration, the heat dissipation in the space surrounded by the cover can be suppressed, and the reduction rate when the oxide reacts with the reducing gas can be increased.

又,本揭示之第7態樣之焊接製品製造裝置係例如圖4所示,為上述本揭示之第1至6態樣中任一態樣之焊接製品製造裝置中,蓋體16B係具有網部16h,該網部16h係使基板上的物質所生成的氣化之物質通過,但使液化或固化的物質無法通過。 In addition, the welding product manufacturing apparatus of the seventh aspect of the present disclosure is, for example, as shown in FIG. 4. In the welding product manufacturing apparatus of any one of the first to sixth aspects of the present disclosure, the cover 16B has a mesh Portion 16h, the mesh portion 16h allows vaporized substances generated from substances on the substrate to pass, but liquefied or solidified substances cannot pass.

藉由上述構成,氣化之物質透過網部釋出至蓋體外,但液化或固化的物質不會侵入蓋體內側,可抑制凝結物質附著於基板。 With the above structure, the vaporized substance is released to the outside of the cover through the mesh part, but the liquefied or solidified substance does not invade the inside of the cover, and the adhesion of the condensed substance to the substrate can be suppressed.

又,本揭示之第8態樣之焊接製品之製造方法係例如參照圖1及圖2所示,為使用上述本揭示之第1至7態樣中任一態樣之焊接製品製造裝置1而製造焊接製品之方法,並具有下述步驟:載置步驟(S1),係使配置有焊料之基板W載置於載台13;覆蓋步驟(S2),係從焊料隔開距離地以蓋體16覆蓋載置於載台13之基板W的至少上部;加熱步驟(S3),係在覆蓋步驟(S2)後加熱基板W;及還原氣體供給步驟(S4),係於腔室11內供給還原氣體F。 In addition, the manufacturing method of the welded product of the eighth aspect of the present disclosure is shown, for example, with reference to FIGS. 1 and 2, which uses the welded product manufacturing apparatus 1 of any one of the first to seventh aspects of the present disclosure. The method of manufacturing soldered products has the following steps: the placing step (S1) is to place the substrate W on which the solder is placed on the stage 13; the covering step (S2) is to cover the body at a distance from the solder 16 covers at least the upper part of the substrate W placed on the stage 13; the heating step (S3) is to heat the substrate W after the covering step (S2); and the reducing gas supply step (S4) is to supply the reduction in the chamber 11 Gas F.

藉由上述構成可製造焊接製品,該焊接製品中,由基板上的物質所生成的物質不會附著於基板,且可提升製造時的還原速度及生產性。 With the above configuration, a welded product can be manufactured. In the welded product, the substance generated from the substance on the substrate does not adhere to the substrate, and the reduction speed and productivity during manufacturing can be improved.

又,本揭示之第9態樣之焊接製品之製造方法係例如參照圖1及圖2所示,在上述本揭示之第8態樣之焊接製品之製造方法中,覆蓋步驟(S2)為使焊料至蓋體16為止的最短部分之距離構成為0.1mm至20mm。 In addition, the manufacturing method of the welded product of the ninth aspect of the present disclosure is shown, for example, with reference to FIGS. 1 and 2. In the manufacturing method of the welded product of the eighth aspect of the present disclosure, the covering step (S2) is The distance from the solder to the shortest part of the lid 16 is configured to be 0.1 mm to 20 mm.

藉由上述構成,可抑制基板散熱至周邊,可提升氧化物與還原氣體反應時的還原速度。 With the above structure, the substrate can be prevented from dissipating heat to the periphery, and the reduction rate when the oxide reacts with the reducing gas can be increased.

根據本發明,可抑制基板上的物質所生成的氣化之物質凝結並附著於基板,並可提升氧化物與還原氣體反應時的還原速度。 According to the present invention, the vaporized substance generated by the substance on the substrate can be prevented from being condensed and attached to the substrate, and the reduction rate when the oxide reacts with the reducing gas can be increased.

1:焊接製品製造裝置 1: Welding product manufacturing equipment

1A:焊接製品製造裝置 1A: Welding product manufacturing equipment

11:腔室 11: Chamber

11f:甲酸導入口 11f: Formic acid inlet

13:載台 13: Stage

13A:載台 13A: Stage

13e:高緣 13e: high margin

13t:載置面 13t: Mounting surface

15:加熱部 15: Heating section

16:蓋體 16: Lid

16A:蓋體 16A: Lid

16B:蓋體 16B: Lid

16h:網部 16h: Net department

16s:側板 16s: side panel

16t:頂板 16t: roof

19:還原氣體供給裝置 19: Reducing gas supply device

19p:配管 19p: Piping

19v:控制閥 19v: control valve

50:控制裝置 50: control device

F:還原氣體 F: reducing gas

P:製品 P: Products

S:焊料凸塊 S: Solder bump

W:基板 W: substrate

圖1係一實施型態之焊接製品製造裝置的概略構成圖。 Fig. 1 is a schematic configuration diagram of an embodiment of a welded product manufacturing apparatus.

圖2係說明焊接製品之製造順序的流程圖。 Figure 2 is a flowchart illustrating the manufacturing sequence of welded products.

圖3係一實施型態之變形例之焊接製品製造裝置的概略構成圖。 Fig. 3 is a schematic configuration diagram of a welded product manufacturing apparatus according to a modification of the embodiment.

圖4係表示蓋體之變形例之概略構成的垂直剖面圖,該蓋體係構成一實施型態之焊接製品製造裝置。 4 is a vertical cross-sectional view showing a schematic configuration of a modification of the cover body, and the cover system constitutes an embodiment of a welded product manufacturing device.

本申請係根據2019年7月26日於日本國所申請日本特願2019-138130號及2020年6月4日於日本國所申請日本特願2020-097848號,並將該等內容援用於本申請。 This application is based on Japanese Patent Application No. 2019-138130 filed in Japan on July 26, 2019 and Japanese Patent Application No. 2020-097848 filed in Japan on June 4, 2020, and these contents are used in this application. Application.

又,本發明可藉由以下詳細說明而完全理解。本發明之進一步應用範圍亦可由以下詳細說明而自明。但該詳細說明及特定實例係本發明之較佳實施型態,其記載目的是用於說明。所屬技術領域中具有通常知識者可由該詳細說明在本發明之精神及範圍內進行各種變更、改變。申請人欲主張所記載實施型態其目的皆非揭示於公眾,所揭示改變、代替案中或許有文言上不包含於申請專利範圍內的部分,但該等皆為均等論下之發明的一部 分。以下參照圖面說明各實施型態。又,各圖中互相相同或相當之構件係附以相同或類似的符號並省略重複說明。 In addition, the present invention can be fully understood by the following detailed description. The further application scope of the present invention can also be self-evident from the following detailed description. However, the detailed description and specific examples are preferred embodiments of the present invention, and the purpose of the description is to illustrate. Those with ordinary knowledge in the technical field can make various changes and changes within the spirit and scope of the present invention from the detailed description. The applicant wants to claim that the purpose of the recorded implementation types is not to be disclosed to the public, and there may be parts in the disclosed changes and substitutions that are not included in the scope of the patent application, but these are all aspects of the invention under the theory of equality. unit Minute. The following describes each implementation type with reference to the drawings. In addition, components that are the same or equivalent to each other in each figure are denoted by the same or similar symbols, and repeated descriptions are omitted.

首先參照圖1說明一實施型態之焊接製品製造裝置1。圖1係焊接製品製造裝置1的概略構成圖。焊接製品製造裝置1係以可利用作為焊料凸塊形成裝置且可利用作為共焊接裝置之方式構成。焊料凸塊形成裝置係將配置於基板W上的原料焊料形成為表面成為半球狀之完成焊料凸塊S(以下稱為「焊料凸塊S」),該完成焊料凸塊係適用於將電子零件實裝於基板W時之迴焊步驟。於本說明書中,原料焊料是指成為完成焊料凸塊S前之非半球狀焊料,典型而言為適量分配有焊料膏者。使用作為原料焊料之焊料典型而言為鉛與鋅或錫等的化合物。在本實施型態中,焊料凸塊形成裝置可在不使用助焊劑下於基板W上形成焊料凸塊S。另一方面,焊接裝置係將於基板W上配置之完成焊料凸塊S配置於電子零件,並在迴焊步驟中使焊料凸塊S熔融,使電子零件焊接於基板W。在焊料凸塊形成裝置製造之附焊料凸塊S之基板W(形成有焊料凸塊S之基板W)、及在焊接裝置製造之實裝電子零件之基板W(於基板W上的焊料凸塊S接合電子零件之已接合基板)分別為焊接製品一形態。焊接製品製造裝置1可視為焊料凸塊形成裝置與焊接裝置的總稱。以下說明將焊接製品製造裝置1利用作為焊料凸塊形成裝置。焊接製品製造裝置1係具備腔室11、載置有基板W之載台13、加熱基板W之加熱器15、覆蓋基板W之蓋體16、及於腔室11內供給甲酸氣體F之甲酸供給部19。 First, referring to FIG. 1, an embodiment of a welded product manufacturing apparatus 1 will be described. FIG. 1 is a schematic configuration diagram of the welded product manufacturing apparatus 1. As shown in FIG. The soldering product manufacturing apparatus 1 is configured to be usable as a solder bump forming apparatus and as a co-soldering apparatus. The solder bump forming device forms the raw material solder arranged on the substrate W into a finished solder bump S (hereinafter referred to as "solder bump S") whose surface becomes a hemispherical shape. The finished solder bump is suitable for electronic parts Reflow step when mounting on the substrate W. In this specification, the raw material solder refers to the non-hemispherical solder before the solder bump S is completed, and it is typically one with a proper amount of solder paste dispensed. The solder used as the raw material solder is typically a compound of lead, zinc, tin, or the like. In this embodiment, the solder bump forming device can form the solder bump S on the substrate W without using flux. On the other hand, the soldering device arranges the finished solder bumps S arranged on the substrate W on the electronic components, and melts the solder bumps S in the reflow step, so that the electronic components are soldered on the substrate W. The substrate W with solder bumps S manufactured in the solder bump forming device (the substrate W on which the solder bumps S is formed), and the substrate W with electronic parts mounted on the solder bumping device (the solder bumps on the substrate W) S-joined electronic components (joined substrates) are respectively a form of soldered products. The soldering product manufacturing apparatus 1 can be regarded as a general term for the solder bump forming apparatus and the soldering apparatus. The following description uses the soldered product manufacturing apparatus 1 as a solder bump forming apparatus. The welding product manufacturing apparatus 1 includes a chamber 11, a stage 13 on which a substrate W is placed, a heater 15 for heating the substrate W, a cover 16 for covering the substrate W, and a formic acid supply that supplies formic acid gas F in the chamber 11 Department 19.

腔室11係形成有進行將配置於基板W上之原料焊料形成為焊料凸塊S之處理的空間。腔室11構成為可承受內部與外部的壓力差 之構造。以製造容易度之觀點來看,腔室11典型而言形成為長方體狀,以耐壓之觀點來看,外周壁可形成為曲面。在腔室11中形成導入甲酸氣體F之甲酸導入口11f。在本實施型態中,甲酸導入口11f形成於腔室11上部。又,腔室11中設置有擋門(圖中未表示),該擋門係使開口(圖中未表示)開閉,該開口可使具有焊料之基板W進出。 The cavity 11 is formed with a space for forming the raw material solder arranged on the substrate W into the solder bump S. The chamber 11 is configured to withstand the pressure difference between the inside and the outside 的结构。 The structure. From the viewpoint of ease of manufacture, the cavity 11 is typically formed in a rectangular parallelepiped shape, and from the viewpoint of pressure resistance, the outer peripheral wall may be formed as a curved surface. In the chamber 11, a formic acid introduction port 11f into which the formic acid gas F is introduced is formed. In this embodiment, the formic acid introduction port 11f is formed in the upper part of the chamber 11. In addition, a shutter (not shown in the figure) is provided in the chamber 11, and the shutter opens and closes an opening (not shown in the figure). The opening allows the substrate W with solder to pass in and out.

在本實施型態中,載台13形成為板狀並配置於於腔室11內。載台13中,以載置穩定性之觀點來看,載置基板W之載置面13t係形成為平坦面。典型而言,載置面13t內面亦形成為平坦面。典型而言,載台13在腔室11內係以載置面13t成為水平之方式設置。但是,載台13在所載置基板W之可載置範圍(在所載置基板W不會滑落之範圍內)中可相對於水平傾斜(載置面13t擴展方向具有水平方向成分及鉛直方向成分)。載台13為可將加熱器15之發熱傳達至基板W之材料所形成,典型而言係以石墨形成,但可以高熱傳導率之金屬形成。在此,由加熱器15透過載台13傳達至基板W之熱量係可使溫度提升至使配置於基板W上之原料焊料熔融的溫度,載台13典型而言係構成為可提升至高於配置於基板W上之原料焊料的熔點。載台13的載置面13t面積形成為大於基板W。 In this embodiment, the carrier 13 is formed in a plate shape and is arranged in the cavity 11. In the stage 13, the mounting surface 13t on which the substrate W is mounted is formed as a flat surface from the viewpoint of mounting stability. Typically, the inner surface of the placing surface 13t is also formed as a flat surface. Typically, the stage 13 is installed in the chamber 11 such that the mounting surface 13t becomes horizontal. However, the stage 13 can be tilted with respect to the horizontal in the mountable range of the mounted substrate W (within the range where the mounted substrate W does not fall) (the mounting surface 13t has a horizontal component and a vertical direction in the extending direction ingredient). The stage 13 is formed of a material that can transmit the heat generated by the heater 15 to the substrate W, and is typically formed of graphite, but may be formed of a metal with high thermal conductivity. Here, the heat transmitted from the heater 15 to the substrate W through the stage 13 can increase the temperature to a temperature at which the raw material solder arranged on the substrate W is melted. The stage 13 is typically configured to be raised higher than the arrangement. The melting point of the raw material solder on the substrate W. The mounting surface 13t of the stage 13 is formed to be larger than the substrate W in area.

在本實施型態中,加熱器15係配置於載台13下方之載台13之接近位置的腔室11內。在本實施型態中,加熱器15為複數支紅外線燈(以下稱為「IR燈」)隔有適當間隔沿載台13內面配置而構成。加熱器15係透過載台13加熱載置於載台13之基板W,相當於加熱部。又,在構成加熱器15之複數支IR燈之間隙可設置梳齒狀冷卻部,該梳齒狀冷卻部係與載台13內面接觸,藉此冷卻載台13(更進一步而言為基板W),該冷卻 部係以可相對於載台13進行接近(冷卻時)及分離(非冷卻時)來回移動之方式構成。 In this embodiment, the heater 15 is arranged in the chamber 11 at a position close to the stage 13 below the stage 13. In this embodiment, the heater 15 is composed of a plurality of infrared lamps (hereinafter referred to as "IR lamps") arranged along the inner surface of the stage 13 at appropriate intervals. The heater 15 heats the substrate W placed on the stage 13 through the stage 13 and corresponds to a heating section. In addition, a comb-tooth-shaped cooling portion can be provided in the gap between the plurality of IR lamps constituting the heater 15, and the comb-tooth-shaped cooling portion is in contact with the inner surface of the carrier 13, thereby cooling the carrier 13 (more specifically, the substrate W), the cooling The part is configured to be able to move back and forth with respect to the stage 13 (when cooling) and separated (when not cooling).

為了預防不需要物質附著於基板W等,蓋體16係在配置有原料焊料之基板W載置於載台13時覆蓋有基板W。又,蓋體16係適當覆蓋基板W,藉此可提升甲酸氣體F所進行氧化物的還原速度。在本實施型態中,蓋體16係以可一體覆蓋基板W整體之方式,使平視中的大小形成為包含基板W之大小。換言之,蓋體16可覆蓋複數配置於基板W之原料焊料。在本實施型態中,蓋體16係具有形成為矩形板狀之頂板16t、及由頂板16t四邊相對於頂板16t直角延伸之側板16s。四個側板16s分別相對於頂板16t在相同方向以相同長度延伸。側板16s之長度係在側板16s與載台13接觸時頂板16t不會接觸基板W及原料焊料之範圍內盡可能形成較短。此時,具有原料焊料之基板W中的原料焊料與頂板16t的最短距離(典型而言為發揮所求功能之範圍中,焊料與蓋體16的距離成為最短部分的距離)相當於特定距離。如上述,在本實施型態中,蓋體16係以與載台13協同作用並完全覆蓋基板W之方式構成,藉此可強化基板W的保護。即使以蓋體16與載台13完全覆蓋基板W,於腔室11內供給甲酸氣體F時,因甲酸氣體F的特性,甲酸氣體F可由蓋體16與載台13的境界侵入蓋體16內部。但是,藉由僅覆蓋基板W上部而可保護基板W不受不需要物質的影響時,可由蓋體16取除側板16s,使甲酸氣體F容易到達基板W的方式為之。另一方面,以藉由甲酸氣體F提升氧化物的還原速度之觀點來看,為了抑制基板W周圍溫度降低,較佳為使用具有側板16s之蓋體16包圍基板W周圍的空間。基板W中的原料焊料與頂板16t的最短距 離較佳為0.1mm至20mm,以藉由甲酸氣體F提升氧化物的還原速度之觀點來看,更佳為2.0mm以下,又更佳為1.5mm以下,另一方面,以抑制裝置製造困難性之觀點來看更佳為0.5mm以上,又更佳為1.0mm。基板W中的原料焊料與頂板16t的最短距離會有因於基板W複數配置之原料焊料而異的情形,較佳為分別的最短距離為0.1mm至20mm之範圍。蓋體16較佳為以高熱傳導率材料形成,典型而言為以金屬形成。 In order to prevent unnecessary substances from adhering to the substrate W and the like, the cover 16 is covered with the substrate W when the substrate W on which the raw material solder is placed is placed on the stage 13. In addition, the cover 16 appropriately covers the substrate W, so that the reduction rate of the oxide by the formic acid gas F can be increased. In this embodiment, the cover 16 can cover the entire substrate W as a whole, so that the size in a plan view is formed to include the substrate W. In other words, the cover 16 can cover a plurality of raw material solders disposed on the substrate W. In this embodiment, the cover 16 has a top plate 16t formed in a rectangular plate shape, and a side plate 16s extending from the four sides of the top plate 16t at right angles to the top plate 16t. The four side plates 16s respectively extend with the same length in the same direction with respect to the top plate 16t. The length of the side plate 16s is made as short as possible within the range where the top plate 16t does not contact the substrate W and the raw material solder when the side plate 16s is in contact with the stage 13. At this time, the shortest distance between the raw material solder in the substrate W with the raw material solder and the top plate 16t (typically, the distance at which the distance between the solder and the lid 16 becomes the shortest part of the range where the desired function is exhibited) corresponds to the specific distance. As mentioned above, in this embodiment, the cover 16 is configured to cooperate with the stage 13 and completely cover the substrate W, thereby enhancing the protection of the substrate W. Even if the substrate W is completely covered with the cover 16 and the stage 13, when the formic acid gas F is supplied in the chamber 11, due to the characteristics of the formic acid gas F, the formic acid gas F can penetrate into the cover 16 from the boundary between the cover 16 and the stage 13 . However, when the substrate W can be protected from unnecessary substances by covering only the upper part of the substrate W, the side plate 16s can be removed by the cover 16 so that the formic acid gas F can easily reach the substrate W. On the other hand, from the viewpoint of increasing the reduction rate of oxides by the formic acid gas F, in order to suppress the decrease in the temperature around the substrate W, it is preferable to surround the space around the substrate W with a cover 16 having a side plate 16s. The shortest distance between the raw material solder in the substrate W and the top plate 16t The distance is preferably 0.1 mm to 20 mm, and from the viewpoint of increasing the reduction rate of oxides by formic acid gas F, it is more preferably 2.0 mm or less, and more preferably 1.5 mm or less. On the other hand, it is to suppress the difficulty of device manufacturing From the viewpoint of sex, it is more preferably 0.5 mm or more, and still more preferably 1.0 mm. The shortest distance between the raw material solder in the substrate W and the top plate 16t may vary depending on the plurality of raw material solders arranged on the substrate W, and it is preferable that the respective shortest distances be in the range of 0.1 mm to 20 mm. The cover 16 is preferably formed of a material with high thermal conductivity, and is typically formed of a metal.

甲酸供給部19係具有甲酸源(圖中未表示)、將甲酸氣體F由甲酸源導入腔室11之配管19p、及配設於配管19p之控制閥19v。甲酸源(圖中未表示)係具有氣化甲酸之氣化部,並以可將氣化甲酸F供給於腔室11內之方式構成。配管19p係與甲酸導入口11f連接。甲酸供給部19係以在打開控制閥19v時使氣化甲酸F供給於腔室內,在關閉控制閥19v時中止甲酸氣體F對腔室11內的供給之方式構成。甲酸氣體F係供給於還原溫度之基板W或焊料,藉此可還原基板W或焊料的氧化物,相當於還原氣體。又,甲酸供給部19係供給作為還原氣體之甲酸氣體F,相當於還原氣體供給裝置。在焊接製品製造裝置1中,藉由於還原溫度之基板W或焊料供給甲酸氣體F,可在不使用助焊劑下還原基板W或焊料的氧化物。 The formic acid supply unit 19 has a formic acid source (not shown in the figure), a pipe 19p for introducing formic acid gas F into the chamber 11 from the formic acid source, and a control valve 19v arranged in the pipe 19p. The formic acid source (not shown in the figure) has a vaporization section for vaporized formic acid, and is configured in such a way that vaporized formic acid F can be supplied into the chamber 11. The pipe 19p is connected to the formic acid inlet 11f. The formic acid supply unit 19 is configured to supply vaporized formic acid F into the chamber when the control valve 19v is opened, and stop the supply of formic acid gas F into the chamber 11 when the control valve 19v is closed. The formic acid gas F is supplied to the substrate W or the solder at the reduction temperature, thereby reducing the oxide of the substrate W or the solder, which is equivalent to a reducing gas. In addition, the formic acid supply unit 19 supplies formic acid gas F as a reducing gas, and corresponds to a reducing gas supply device. In the soldering product manufacturing apparatus 1, by supplying formic acid gas F to the substrate W or the solder due to the reduction temperature, the oxide of the substrate W or the solder can be reduced without using a flux.

焊接製品製造裝置1係進一步具備可控制焊接製品製造裝置1的動作之控制裝置50。控制裝置50係以有線或無線的方式與加熱器15連接,並以透過變更加熱器15之ON-OFF及輸出而可加熱載台13之方式構成。又,控制裝置50係以有線或無線的方式與甲酸供給部19連接, 並以通過控制閥19v之開閉動作而可使甲酸氣體F供給於腔室11之方式構成。 The welded product manufacturing device 1 is further provided with a control device 50 that can control the operation of the welded product manufacturing device 1. The control device 50 is connected to the heater 15 in a wired or wireless manner, and is configured to heat the stage 13 by changing the ON-OFF and output of the heater 15. In addition, the control device 50 is connected to the formic acid supply unit 19 in a wired or wireless manner, And it is configured such that the formic acid gas F can be supplied to the chamber 11 by the opening and closing operation of the control valve 19v.

接著參照圖2說明使用焊接製品製造裝置1之焊接製品之製造方法(在此為焊料凸塊形成基板之製造方法)。圖2為表示焊料凸塊形成基板(焊接製品)之製造順序的流程圖。以下,在焊料凸塊形成基板之製造方法說明中提及焊接製品製造裝置1之構成時,係適當地參照圖1。以下使用焊接製品製造裝置1之焊料凸塊形成基板之製造方法的說明亦是焊接製品製造裝置1的作用說明。 Next, a method of manufacturing a soldered product using the soldered product manufacturing device 1 (here, a method of manufacturing a solder bump forming substrate) will be described with reference to FIG. 2. Fig. 2 is a flowchart showing the manufacturing procedure of a solder bump forming substrate (solder product). Hereinafter, when referring to the structure of the soldering product manufacturing apparatus 1 in the description of the manufacturing method of the solder bump forming substrate, refer to FIG. 1 as appropriate. The following description of the method of manufacturing a substrate using solder bumps of the soldering product manufacturing device 1 is also an explanation of the function of the soldering product manufacturing device 1.

製造焊料凸塊形成基板時,首先使配置有原料焊料之基板W進入腔室11內,並載至於載台13之載置面13t(S1:載置步驟)。配置有原料焊料之基板W載置於腔室11內之載台13後,以覆蓋配置有原料焊料之基板W之方式,使蓋體16配置於載台13上(S2:覆蓋步驟)。此時,以原料焊料及基板W不與蓋體16接觸之方式使蓋體16配置於載台13上。又,配置於基板W之各原料焊料與蓋體16的最短距離分別成為特定距離。在此,特定距離為0.1mm至20mm。配置蓋體16後,控制裝置50係使加熱器15成為ON,將載台13及具有原料焊料之基板W加熱至還原溫度(S3)。還原溫度低於配置於基板W上之原料焊料的熔點,且適合使原料焊料及基板W的氧化膜以甲酸F進行還原處理。若藉由加熱器15加熱載台13,則熱也會傳達至與載台13接觸之蓋體16,蓋體16也會被加熱。接著,蓋體16及載台13所包圍內部空間會成為高溫。 When manufacturing the solder bump formation substrate, first, the substrate W on which the raw material solder is placed is put into the chamber 11 and placed on the placement surface 13t of the stage 13 (S1: placement step). After the substrate W with the raw material solder is placed on the stage 13 in the chamber 11, the cover 16 is placed on the carrier 13 so as to cover the substrate W with the raw material solder (S2: covering step). At this time, the lid body 16 is arranged on the stage 13 so that the raw material solder and the substrate W do not contact the lid body 16. In addition, the shortest distances between the respective raw material solders arranged on the substrate W and the lid 16 become specific distances. Here, the specific distance is 0.1 mm to 20 mm. After the cover 16 is arranged, the control device 50 turns on the heater 15 to heat the stage 13 and the substrate W with the raw material solder to the reduction temperature (S3). The reduction temperature is lower than the melting point of the raw material solder disposed on the substrate W, and is suitable for reducing the raw material solder and the oxide film of the substrate W with formic acid F. If the stage 13 is heated by the heater 15, the heat will also be transmitted to the lid body 16 in contact with the stage 13, and the lid body 16 will also be heated. Then, the internal space enclosed by the lid 16 and the stage 13 becomes high temperature.

接著,控制裝置50使載台13溫度提升至還原溫度後,打開控制閥19v並於腔室11內供給甲酸氣體F(S4:還原氣體供給步驟)。藉 由於腔室11內供給甲酸氣體F而進行還原處理,該係還原處理係使形成於原料焊料或基板W表面等的氧化膜藉由甲酸F而還原。此時,配置於基板W之各原料焊料與蓋體16的最短距離成為特定距離,故可提升藉由甲酸氣體F還原氧化膜的速度。該還原速度的提升原因推測為:因原料焊料與蓋體16的最短距離成為特定距離,基板W周圍的空間變為較小而抑制散熱;及/或甲酸分子與氧化膜的衝突次數增加。使用甲酸F去除氧化膜,藉此可不使用助焊劑,之後可省略洗淨助焊劑之步驟。又,在載台13溫度提升至還原溫度前於腔室11內供給甲酸氣體F亦可去除氧化膜時,還原氣體供給步驟(S4)係可在加熱至還原溫度之步驟(S3)前進行,或與加熱至還原溫度之步驟(S3)並行。 Next, after the control device 50 raises the temperature of the stage 13 to the reduction temperature, it opens the control valve 19v and supplies formic acid gas F into the chamber 11 (S4: reducing gas supply step). borrow The formic acid gas F is supplied in the chamber 11 to perform a reduction process. This reduction process is to reduce the oxide film formed on the raw material solder or the surface of the substrate W by the formic acid F. At this time, the shortest distance between each raw material solder disposed on the substrate W and the lid 16 becomes a specific distance, so the speed of reducing the oxide film by the formic acid gas F can be increased. The reason for the increase in the reduction rate is presumably as follows: since the shortest distance between the raw material solder and the lid 16 becomes a certain distance, the space around the substrate W becomes smaller and heat dissipation is suppressed; and/or the number of collisions between formic acid molecules and the oxide film increases. Use formic acid F to remove the oxide film, so that no flux is used, and the step of cleaning the flux can be omitted afterwards. In addition, when the formic acid gas F is supplied into the chamber 11 before the temperature of the stage 13 is raised to the reduction temperature to remove the oxide film, the reducing gas supply step (S4) can be performed before the step (S3) of heating to the reduction temperature. Or in parallel with the step (S3) of heating to the reduction temperature.

甲酸F之還原處理結束後,控制裝置50提升加熱器15的輸出至超過原料焊料熔點之特定溫度的熔融溫度,並加熱載台13及原料焊接基板W(S5)。藉此,基板W上的原料焊料會熔融形成半球狀。原料焊料形成半球狀後,控制裝置50係使加熱器15之加熱停止,並由腔室11排出甲酸氣體F,冷卻具有半球狀焊料之基板W(S6)。又,加熱至還原溫度之步驟(S3)後,繼續加熱至加熱器15停止加熱前的熔融溫度,其間相當於加熱步驟。接著,在加熱器15停止加熱後,藉由冷卻使基板W上的半球狀焊料固化,而形成完成焊料凸塊S。其後,將形成有焊料凸塊S之基板W(焊接製品一形態,以下稱為「製品P」)由腔室11取出(S7)。藉此獲得具有焊料凸塊S之基板W,保險起見係判斷是否適當地形成焊料凸塊S(S8)。未形成焊料凸塊S時,回到載置步驟(S1)並再次形成焊料凸塊S,再進行上述流程。另一方面,形成有焊料凸塊S時,結束焊料凸塊形成基板(製品P) 之製造。藉此,在一連串步驟中製造焊料凸塊形成基板(製品P),焊料凸塊形成基板(製品P)係送至後步驟。接著,要另外製造焊料凸塊形成基板(製品P)時,係重複上述流程。 After the reduction process of formic acid F is completed, the control device 50 raises the output of the heater 15 to a melting temperature exceeding the melting point of the raw material solder, and heats the stage 13 and the raw material soldering substrate W (S5). Thereby, the raw material solder on the substrate W melts into a hemispherical shape. After the raw material solder forms a hemispherical shape, the control device 50 stops the heating of the heater 15 and discharges the formic acid gas F from the chamber 11 to cool the substrate W with the hemispherical solder (S6). In addition, after the step (S3) of heating to the reduction temperature, the heating is continued to the melting temperature before the heater 15 stops heating, which corresponds to the heating step. Then, after the heater 15 stops heating, the hemispherical solder on the substrate W is solidified by cooling, and the finished solder bump S is formed. After that, the substrate W on which the solder bumps S is formed (a form of soldered product, hereinafter referred to as "product P") is taken out from the chamber 11 (S7). Thus, a substrate W with solder bumps S is obtained, and for the sake of safety, it is determined whether the solder bumps S are properly formed (S8). When the solder bump S is not formed, return to the placing step (S1) and form the solder bump S again, and then perform the above-mentioned process. On the other hand, when the solder bump S is formed, the solder bump formation substrate (product P) is finished 之 Manufacturing. Thereby, the solder bump formation substrate (product P) is manufactured in a series of steps, and the solder bump formation substrate (product P) is sent to the subsequent step. Next, when a solder bump formation substrate (product P) is to be separately manufactured, the above-mentioned process is repeated.

上述流程中,在將原料焊料及基板W加熱至還原溫度(S3)、供給甲酸氣體F(S4)、視需要之加熱至熔融溫度時(S5)之中,原料焊料及/或基板W的成分一部分會產生氣化物質、及/或其與甲酸化合的物質(以下將該等稱為「氣化物質」)。氣化物質會於腔室11內擴散。接著,原料焊料熔融形成半球狀,停止加熱器15的加熱,降低腔室11內之溫度,則氣化物質會液化或固化(以下稱為「凝結」)。凝結之氣化物質(前述說明中稱為不需要物質者,以下稱為「凝結物質」)會附著、堆積於腔室11內壁等。在焊料凸塊形成基板之製造過程中,例如於腔室11內供給甲酸氣體F時,至此堆積於腔室11內壁等之凝結物質會飛散。在本實施型態中,由原料焊料形成焊料凸塊S時,係以蓋體16覆蓋配置有原料焊料之基板W,故即使凝結物質在腔室11內飛散時,也可預防凝結物質附著於基板W等。又,將製品P由腔室11取出前,腔室11內之溫度會降低並產生凝結物質,經加熱載台13及蓋體16內部雖然降低至焊料固化溫度,但依然為高溫狀態,可抑制氣化物質凝結。 In the above process, when the raw material solder and the substrate W are heated to the reduction temperature (S3), the formic acid gas F (S4) is supplied, and the melting temperature is optionally heated (S5), the composition of the raw material solder and/or the substrate W Some produce vaporized substances and/or substances that combine with formic acid (hereinafter referred to as "vaporized substances"). The vaporized substance will diffuse in the chamber 11. Then, the raw material solder is melted into a hemispherical shape, the heating of the heater 15 is stopped, and the temperature in the cavity 11 is lowered, and the vaporized substance will liquefy or solidify (hereinafter referred to as "condensation"). Condensed vaporized substances (referred to as unnecessary substances in the foregoing description, and hereinafter referred to as "condensed substances") will adhere and accumulate on the inner wall of the chamber 11 and the like. During the manufacturing process of the solder bump forming substrate, for example, when the formic acid gas F is supplied in the chamber 11, the condensed substances accumulated on the inner wall of the chamber 11 so far are scattered. In this embodiment, when the solder bump S is formed from the raw material solder, the substrate W on which the raw material solder is disposed is covered with the cover 16, so even if the condensed material is scattered in the cavity 11, it can prevent the condensed material from adhering to Substrate W and so on. In addition, before the product P is taken out of the chamber 11, the temperature in the chamber 11 will decrease and condensate will be generated. Although the inside of the heating stage 13 and the cover 16 is lowered to the solder solidification temperature, it is still in a high temperature state, which can be suppressed The vaporized substance condenses.

上述焊料凸塊形成基板之製造方法所製造焊料凸塊形成基板(製品P)可使用作為焊接電子零件之對象。於焊料凸塊形成基板(製品P)焊接電子零件,藉此可製造焊接製品一形態之電子零件實裝基板(已接合基板)。接著,如前述,焊接製品製造裝置1可利用作為焊接裝置,故可製造電子零件實裝基板。焊接製品製造裝置1即便是在利用作為焊接裝置時, 與利用作為上述焊料凸塊形成裝置時的構成相同,故可共用大部分上述焊料凸塊形成裝置之說明。將焊接製品製造裝置1利用作為焊接裝置時,以上述焊料凸塊形成裝置之說明來看相異處如下。焊接裝置中,腔室11係形成一空間,該空間係進行使配置於基板W上之焊料凸塊S熔融並於基板W焊接電子零件之處理。由加熱器15透過載台13傳達至基板W之熱量係可將溫度提升至可使配置於基板W上之焊料凸塊S熔融的溫度。蓋體16中,配置有電子零件之焊料凸塊S與蓋體16的最短距離成為前述特定距離。又,電子零件實裝基板(焊接製品)之製造方法基本上可適用圖2所示流程,但以下為相異處。在載置步驟(S1)中,於配置有焊料凸塊S之基板W配置(供給)電子零件,並將其載置於腔室11內之載台13。在步驟(S7)中,從腔室11取出之焊接製品為於基板W上的焊料緊黏電子零件者(電子零件實裝基板)。在步驟(S8)中,判斷電子零件是否適當地焊接於基板W,未焊接時則回到載置步驟(S1),焊接時則結束電子零件實裝基板(焊接製品)之製造。利用焊接裝置之電子零件實裝基板(焊接製品)之製造方法中,以蓋體16覆蓋基板W並進行氧化膜之還原處理(S3-S4),藉此可提升還原速度。 The solder bump formation substrate (product P) manufactured by the above-mentioned manufacturing method of the solder bump formation substrate can be used as an object for soldering electronic parts. By soldering electronic components on the solder bump formation substrate (product P), the electronic component mounting substrate (bonded substrate) of one form of soldered product can be manufactured. Next, as described above, the soldered product manufacturing device 1 can be used as a soldering device, so that the electronic component mounting board can be manufactured. Even when the welding product manufacturing device 1 is used as a welding device, The configuration is the same as when used as the above-mentioned solder bump forming apparatus, so most of the description of the above-mentioned solder bump forming apparatus can be shared. When the soldered product manufacturing apparatus 1 is used as a soldering apparatus, the difference is as follows from the description of the solder bump forming apparatus described above. In the soldering device, the cavity 11 forms a space, and the space is processed for melting the solder bumps S arranged on the substrate W and soldering electronic components to the substrate W. The heat transferred from the heater 15 to the substrate W through the stage 13 can raise the temperature to a temperature at which the solder bumps S arranged on the substrate W can be melted. In the cover 16, the shortest distance between the solder bump S on which the electronic components are arranged and the cover 16 becomes the aforementioned specific distance. In addition, the manufacturing method of the electronic component mounting board (welded product) can basically be applied to the flow shown in Fig. 2, but the following are the differences. In the placing step (S1), electronic components are placed (supplied) on the substrate W on which the solder bumps S are placed, and placed on the stage 13 in the chamber 11. In the step (S7), the soldered product taken out from the chamber 11 is one where the solder on the substrate W adheres to the electronic component (electronic component mounting substrate). In step (S8), it is determined whether the electronic component is properly soldered to the substrate W. If it is not soldered, it returns to the mounting step (S1), and when soldering, the manufacture of the electronic component mounting substrate (welded product) is completed. In the manufacturing method of the electronic component mounting substrate (welded product) using the soldering device, the substrate W is covered with the cover 16 and the oxide film reduction treatment (S3-S4) is performed, thereby increasing the reduction speed.

如以上說明,根據本實施型態之焊接製品製造裝置1係具備蓋體16,故即使在凝結物質於腔室11內飛散時,也可預防凝結物質附著於基板W等。又,蓋體16與載台13接觸並產生載台13往蓋體16之熱傳達,故可將以載台13及蓋體16包圍之空間保持為高溫狀態,可抑制氣化物質在蓋體16周邊凝結,可抑制凝結物質堆積於蓋體16。又,使基板W上之焊料與覆蓋基板W之蓋體16的最短距離成為特定距離,藉此可提升使用甲酸氣體F之氧化膜的還原處理時的還原速度。又,根據本實施型 態之焊料凸塊形成基板之製造方法,可製造凝結物質不會附著於基板W等之製品P,並可省略後洗淨。又,根據本實施型態之焊接製品之製造方法,可提升使用甲酸氣體F之氧化膜的還原處理時的還原速度。 As described above, the welded product manufacturing apparatus 1 according to the present embodiment is provided with the cover 16, so even when the condensed substance is scattered in the chamber 11, it can prevent the condensed substance from adhering to the substrate W or the like. In addition, the cover 16 contacts the carrier 13 and generates heat transfer from the carrier 13 to the cover 16. Therefore, the space surrounded by the carrier 13 and the cover 16 can be kept at a high temperature, and vaporized substances can be prevented from being deposited on the cover. Condensation on the periphery of 16 can prevent condensed substances from accumulating on the cover 16. In addition, the shortest distance between the solder on the substrate W and the cover 16 covering the substrate W is set to a specific distance, thereby increasing the reduction speed during the reduction treatment of the oxide film using formic acid gas F. Also, according to this embodiment The method of manufacturing a substrate formed by solder bumps in a state of the art can produce products P in which condensed substances do not adhere to the substrate W, etc., and can be omitted and then cleaned. In addition, according to the method of manufacturing a welded product of this embodiment, the reduction speed during the reduction treatment of the oxide film using formic acid gas F can be increased.

接著參照圖3說明一實施型態之變形例之焊接製品製造裝置1A。圖3為焊接製品製造裝置1A的概略構成圖。焊接製品製造裝置1A中,主要是在以具備形成於比載置面13t低一段部分之載台13A、及以板狀構件所形成之蓋體16A來取代載台13(參照圖1)及蓋體16(參照圖1)此點與焊接製品製造裝置1(參照圖1)相異。載台13A係以載置面13t外周比載置面13t高一段之高緣13e包圍。載置面13t周圍的周緣13e之高度較佳為在配置有焊料(原料焊料或焊料凸塊S)之基板W載置於載置面13t時,在具有焊料之基板W的最高部分不會到達周緣13e頂端之範圍內,盡可能地較低。蓋體16A構成為在蓋體16(參照圖1)中僅具有頂板16t(參照圖1)而不具有側板16s(參照圖1)。焊接製品製造裝置1A之上述以外構成係與焊接製品製造裝置1(參照圖1)相同。如上述構成之焊接製品製造裝置1A中,蓋體16A為更單純之構成,故蓋體16A的開閉更為簡便。 Next, a welding product manufacturing apparatus 1A according to a modification of the embodiment will be described with reference to FIG. 3. Fig. 3 is a schematic configuration diagram of a welded product manufacturing apparatus 1A. In the welded product manufacturing apparatus 1A, the stage 13 (refer to FIG. 1) and the cover are mainly replaced by a stage 13A formed at a portion lower than the mounting surface 13t, and a cover 16A formed of a plate-shaped member The body 16 (refer to FIG. 1) is different from the welded product manufacturing apparatus 1 (refer to FIG. 1) in this point. The mounting table 13A is surrounded by a high edge 13e whose outer periphery of the mounting surface 13t is higher than the mounting surface 13t. The height of the peripheral edge 13e around the mounting surface 13t is preferably such that when the substrate W with solder (raw material solder or solder bump S) is placed on the mounting surface 13t, the highest part of the substrate W with solder does not reach Within the range of the top end of the peripheral edge 13e, it should be as low as possible. The cover 16A is configured to include only the top plate 16t (see FIG. 1) and not the side plate 16s (see FIG. 1) in the cover 16 (see FIG. 1). The structure of the welded product manufacturing apparatus 1A other than the above is the same as that of the welded product manufacturing apparatus 1 (refer to FIG. 1). In the welded product manufacturing apparatus 1A configured as described above, the lid 16A has a simpler structure, so that the lid 16A can be opened and closed more easily.

以上說明中,雖加熱器15配設於腔室11內,但可配置於腔室11外側(例如腔室11底面下部),並使加熱器15與載台13之間之腔室11部分為透明,藉由來自加熱器15的輻射熱而加熱載台13。 In the above description, although the heater 15 is arranged in the chamber 11, it can be arranged outside the chamber 11 (for example, the lower part of the bottom surface of the chamber 11), and the part of the chamber 11 between the heater 15 and the stage 13 is It is transparent, and the stage 13 is heated by the radiant heat from the heater 15.

以上說明中,雖藉由甲酸進行基板W及焊料之氧化膜的還原處理,但可將甲酸以外之羧酸氣體使用作為還原氣體,並進行基板W及焊料之氧化膜的還原處理。 In the above description, the substrate W and the oxide film of the solder are reduced by formic acid, but a carboxylic acid gas other than formic acid can be used as a reducing gas to perform the reduction process of the substrate W and the oxide film of the solder.

以上說明中,蓋體16為具有頂板16t及側板16s之構成時,供給於腔室11內之甲酸氣體F或因基板W等加熱產生之氣化物質係可透過蓋體16與載台13的境界在蓋體16之內部與外部之間進出,但如圖4所示變形例之蓋體16B,可設置網部16h,透過該網部16h使氣化物質由蓋體16B內部排出至外部。網部16h係以氣化物質可通過但凝結物質無法通過之方式構成。在此,凝結物質無法通過嚴格上並非指凝結物質無法通過,而是不對製品P品質造成不量影響程度之無法通過,亦即實質上無法通過即可。網部16h典型而言係設置於頂板16t,但可取代頂板16t設置於側板16s、或設置於頂板16t及側板16s。甲酸氣體F亦可通過網部16h。因此,使用蓋體16B時,可有效預防凝結物質接觸基板W等,同時可使甲酸氣體F容易供給於基板W周圍。又,蓋體16B所具有網部16h之構成亦可適用於如圖3所示蓋體16A。 In the above description, when the cover 16 has a top plate 16t and a side plate 16s, the formic acid gas F supplied into the chamber 11 or the vaporized substance generated by the heating of the substrate W can pass through the cover 16 and the carrier 13 The boundary enters and exits between the inside and the outside of the cover 16, but the cover 16B of the modified example shown in FIG. 4 may be provided with a net 16h through which vaporized substances are discharged from the inside of the cover 16B to the outside. The net portion 16h is constructed in a way that vaporized substances can pass but condensed substances cannot pass. Here, the inability of the condensed substance to pass does not strictly mean that the condensed substance cannot pass, but the inability to pass without affecting the quality of the product P to an extent, that is, it does not need to pass substantially. The net portion 16h is typically provided on the top plate 16t, but can be provided on the side plate 16s instead of the top plate 16t, or on the top plate 16t and the side plates 16s. The formic acid gas F can also pass through the mesh for 16 hours. Therefore, when the cover 16B is used, it is possible to effectively prevent the condensed substance from contacting the substrate W and the like, and at the same time, the formic acid gas F can be easily supplied around the substrate W. In addition, the configuration of the net portion 16h included in the lid 16B can also be applied to the lid 16A as shown in FIG. 3.

以上說明中,作為一例主要使用圖1至圖4說明本實施型態之焊接製品製造裝置及焊接製品之製造方法,但各部之構成、構造、數目、配置、形狀、材質等並不限定於上述具體例,所屬技術領域中具有通常知識者於本發明主旨內可適當選擇性採用者亦包含於本發明之範圍。 In the above description, as an example, FIGS. 1 to 4 are mainly used to describe the welding product manufacturing apparatus and the welding product manufacturing method of this embodiment, but the structure, structure, number, arrangement, shape, material, etc. of each part are not limited to the above Specific examples, those with ordinary knowledge in the technical field, which can be appropriately and selectively adopted within the spirit of the present invention, are also included in the scope of the present invention.

本說明書中所引用包括刊物、專利申請及專利之所有文獻可參照各文獻所示,並作為參照併入本案,又,其所有內容係與上述同樣限度地作為參照併入本案。 All documents cited in this specification, including publications, patent applications, and patents, can be referred to as shown in the respective documents and incorporated into this case by reference, and all their contents are incorporated into this case by reference to the same extent as above.

有關於本發明之說明(尤其有關於以下請求項)所使用名詞及相同指示語的使用,在本說明書中,在未特別說明或文脈無明顯矛盾下,應解釋為單數及複數兩者。語句「具備」、「具有」、「含有」及「包含」 在未特別說明應解釋為開放式寫法(亦即「含有但不限於」)。本說明書中,數值範圍的具陳在本說明書中,在未特別說明下,其意義僅為用以說明在該範圍內的各值之簡述法,各值係如本說明書中所分別列舉而併入。本說明書中所說明所有方法在本說明書中未特別限制或文脈無明顯矛盾下,可以各種適當順序進行。本說明書中所使用各種例子或例示的說法(例如「等」)為在未特別說明下僅是用以清楚說明本發明,而非用以限制本發明之範圍。說明書中的任何說法不應解釋為請求項所未記載之要件、或實施本發明所不可缺少者。 Regarding the description of the present invention (especially with regard to the following claims), the use of nouns and the same descriptive words should be interpreted as both singular and plural in this specification, unless otherwise specified or there is no obvious contradiction in context. The sentence "has", "has", "contains" and "contains" If it is not specifically stated, it should be interpreted as open-ended writing (that is, "including but not limited to"). In this specification, the description of the numerical range is in this specification. Unless otherwise specified, its meaning is only a brief description method to illustrate each value within the range, and each value is separately enumerated and incorporated in this specification. . All methods described in this specification can be carried out in various appropriate orders without special restrictions in this specification or without obvious contradiction in context. Various examples or exemplified statements (such as "etc.") used in this specification are only used to clearly illustrate the present invention without special instructions, and are not used to limit the scope of the present invention. Any statement in the specification should not be interpreted as a requirement not recorded in the claim, or what is indispensable for implementing the present invention.

本說明書中包括本發明人等所知用以實施本發明之最佳形態,並說明本發明之較佳實施型態。所屬技術領域中具有通常知識者在熟讀上述說明應可自明該等較佳實施型態之變形。本發明者可預期熟練相關技術者可適當適用該變形,並可以本說明書中具體說明以外之方法實施本發明。因此,根據專利法,本發明包括本說明書所附請求項所述內容的修正及均等物。又,本說明書中,在未特別限制或文脈無明顯矛盾下,所有變形中的上述要件的所有組合皆包括於本發明。 This specification includes the best mode known to the inventors for implementing the present invention, and describes the preferred mode of implementation of the present invention. Those who have ordinary knowledge in the technical field should be able to understand the modifications of the preferred implementation patterns by reading the above descriptions. The inventors of the present invention can expect that those skilled in the related art can appropriately apply this modification, and can implement the present invention in methods other than those specifically described in this specification. Therefore, according to the patent law, the present invention includes amendments and equivalents of the content described in the claims attached to this specification. In addition, in this specification, all combinations of the above-mentioned requirements in all modifications are included in the present invention without special restrictions or no obvious contradiction in context.

Claims (9)

一種焊接製品製造裝置,係具備: A welding product manufacturing device, which is equipped with: 載台,係載置配置有焊料之基板; The carrier is a base board equipped with solder; 蓋體,係隔有特定距離地覆蓋載置於前述載台之前述基板的至少上部; The cover body covers at least the upper part of the aforementioned substrate placed on the aforementioned stage at a certain distance; 腔室,係收容前述載台及前述蓋體; The chamber contains the aforementioned carrier and the aforementioned cover; 加熱部,係加熱載置於前述載台之前述基板;及 The heating part heats the aforementioned substrate placed on the aforementioned stage; and 還原氣體供給裝置,係將還原氧化物之還原氣體供給於前述腔室內。 The reducing gas supply device supplies the reducing gas for reducing oxides into the aforementioned chamber. 如請求項1所述之焊接製品製造裝置,其中前述特定距離是以配置於前述基板之焊料與前述蓋體的最短距離所規定。 The soldered product manufacturing apparatus according to claim 1, wherein the specific distance is specified by the shortest distance between the solder disposed on the substrate and the cover. 如請求項2所述之焊接製品製造裝置,其中前述最短距離係構成為0.1mm至20mm。 The welded product manufacturing device according to claim 2, wherein the shortest distance is configured to be 0.1 mm to 20 mm. 如請求項1所述之焊接製品製造裝置,其中前述特定距離是以前述基板與前述基板上方部分之前述蓋體的最短距離所規定。 The welding product manufacturing apparatus according to claim 1, wherein the specific distance is specified by the shortest distance between the substrate and the cover on the upper portion of the substrate. 如請求項1至4中任一項所述之焊接製品製造裝置,其中前述加熱部係以藉由加熱載置有前述基板之前述載台而加熱前述基板之方式構成; The welded product manufacturing apparatus according to any one of claims 1 to 4, wherein the heating section is configured to heat the substrate by heating the stage on which the substrate is placed; 前述蓋體係以產生來自前述載台的熱傳達之方式與前述載台接觸而構成。 The cover system is configured to be in contact with the stage so as to generate heat transfer from the stage. 如請求項5所述之焊接製品製造裝置,其中前述蓋體係以包圍載置於前述載台之前述基板周圍的空間之方式構成。 The welded product manufacturing apparatus according to claim 5, wherein the cover system is configured to surround a space around the substrate placed on the stage. 如請求項1至6中任一項所述之焊接製品製造裝置,其中前述蓋體具有網部,該網部係使前述基板上的物質所生成的氣化之物質通過,但使液化或固化之前述物質無法通過。 The welded product manufacturing apparatus according to any one of claims 1 to 6, wherein the cover has a net portion that allows vaporized substances generated by substances on the substrate to pass through, but liquefies or solidifies The aforementioned substances cannot pass. 一種焊接製品之製造方法,係使用如請求項1至7中任一項所述之焊接製品製造裝置而製造焊接製品之方法,並具有下述步驟: A method for manufacturing welded products is a method for manufacturing welded products using the welded product manufacturing device as described in any one of claims 1 to 7, and has the following steps: 載置步驟,係將配置有前述焊料之前述基板載置於前述載台; The placing step is to place the aforementioned substrate with the aforementioned solder on the aforementioned carrier; 覆蓋步驟,係從前述焊料隔開距離地以前述蓋體覆蓋載置於前述載台之前述基板的至少上部; The covering step is to cover at least the upper part of the substrate placed on the stage with the cover at a distance from the solder; 加熱步驟,係在前述覆蓋步驟後加熱前述基板;及 The heating step is to heat the substrate after the covering step; and 還原氣體供給步驟,係於前述腔室內供給前述還原氣體。 The reducing gas supply step is to supply the reducing gas in the chamber. 如請求項8所述之焊接製品之製造方法,其中前述覆蓋步驟中係使前述焊料到前述蓋體為止的最短部分之距離構成為0.1mm至20mm。 The method of manufacturing a welded product according to claim 8, wherein in the covering step, the distance between the solder and the shortest part of the cover is configured to be 0.1 mm to 20 mm.
TW109124953A 2019-07-26 2020-07-23 Soldered product manufacturing apparatus and method for manufacturing soldered product TWI843874B (en)

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JP2019-138130 2019-07-26
JP2019138130 2019-07-26
JP2020-097848 2020-06-04
JP2020097848A JP6860729B2 (en) 2019-07-26 2020-06-04 Soldered product manufacturing equipment and soldered product manufacturing method

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