TW202111161A - Method and device for producing quaternary ammonium hydroxide - Google Patents

Method and device for producing quaternary ammonium hydroxide Download PDF

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TW202111161A
TW202111161A TW109122541A TW109122541A TW202111161A TW 202111161 A TW202111161 A TW 202111161A TW 109122541 A TW109122541 A TW 109122541A TW 109122541 A TW109122541 A TW 109122541A TW 202111161 A TW202111161 A TW 202111161A
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anion exchange
membrane
exchange membrane
quaternary ammonium
ammonium hydroxide
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井上裕史
福田憲二
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日商德山股份有限公司
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Abstract

A method for producing quaternary ammonium hydroxide in an electrolysis vessel configured so that a negative ion exchange film and a positive ion exchange film are arranged between electrodes, the method being performed by supplying an aqueous solution of quaternary ammonium halide to a chamber partitioned by the negative ion exchange film and the positive ion exchange film and performing electrolysis, wherein the method for producing quaternary ammonium hydroxide is characterized in that electrolysis is performed by using, as the negative ion exchange film, a film in which a proton-transmission-suppressing layer comprising a high-crosslinking resin layer, etc., is formed on a film surface on one side, the film being used in a state in which the surface where the proton-transmission-suppressing layer is formed is arranged so as to face the negative-electrode side.

Description

氫氧化四級銨之製造方法及製造裝置Manufacturing method and manufacturing device of quaternary ammonium hydroxide

本發明係關於一種使用離子交換膜藉由電解而製造氫氧化四級銨之方法及裝置。The present invention relates to a method and device for producing quaternary ammonium hydroxide by electrolysis using ion exchange membranes.

以氫氧化四甲基銨為代表之氫氧化四級銨係作為相間轉移觸媒、非水溶劑滴定中之鹼之標準溶液、有機系之鹼劑等而用於各種化學反應之進行或分析等中的化合物。又,最近,於製造IC(integrated circuit,集體電路)與LSI(Large Scale Integration,大型積體電路)時,作為用以製造半導體基板、使抗蝕劑顯影等之處理劑廣泛使用。The quaternary ammonium hydroxide represented by tetramethylammonium hydroxide is used as a phase transfer catalyst, a standard solution of alkali in non-aqueous solvent titration, and an organic alkali agent, etc., used for the conduct or analysis of various chemical reactions, etc. In the compound. In addition, recently, when manufacturing IC (integrated circuit) and LSI (Large Scale Integration), it is widely used as a processing agent for manufacturing semiconductor substrates, developing resists, and the like.

氫氧化四級銨要求雜質少且純度高者,特別是用於半導體製造製程之情形時,該要求較高。於近年來,半導體裝置已經顯著地高積體化,已知於使用包含純度低之氫氧化四級銨之顯影液等而製造半導體基板時,於高積體電路中會發生洩漏等,不良品率變高。Quaternary ammonium hydroxide requires less impurities and high purity, especially when used in the semiconductor manufacturing process, the requirements are relatively high. In recent years, semiconductor devices have significantly increased their integration. It is known that when semiconductor substrates are manufactured using a developer containing low-purity quaternary ammonium hydroxide, etc., leakage in the high-integration circuit will cause defective products. The rate becomes higher.

作為高純度之氫氧化四級銨之製造方法,已知有使用鹵化四級銨(具體而言為氯化四甲基銨)作為原料進行電解之方法(參照專利文獻1)。於該方法中,於電極間配置陰離子交換膜及陽離子交換膜,向由陰離子交換膜與陽離子交換膜分隔之室(原料室)供給鹵化四級銨之水溶液而進行電解。於該製造方法中,四級銨離子通過配置於陰極側之陽離子交換膜,移動至供給有水之鹼室(陰極室),於該鹼室高濃度地生成氫氧化四級銨。As a method for producing high-purity quaternary ammonium hydroxide, a method of electrolysis using quaternary ammonium halide (specifically, tetramethylammonium chloride) as a raw material is known (see Patent Document 1). In this method, an anion exchange membrane and a cation exchange membrane are arranged between the electrodes, and an aqueous solution of quaternary ammonium halide is supplied to a chamber (raw material chamber) separated by the anion exchange membrane and the cation exchange membrane to perform electrolysis. In this manufacturing method, quaternary ammonium ions pass through a cation exchange membrane arranged on the cathode side and move to a caustic chamber (cathode chamber) supplied with water, where quaternary ammonium hydroxide is generated in a high concentration.

於藉由此種電解之氫氧化四級銨之製造方法中,上述原料室之鹵離子(具體而言為氯化物離子)通過分隔陽極側之陰離子交換膜,移動至陽極室,藉由下述式: 2X- →X2 +2e- 所示之電極反應生成鹵素氣體(例如氯氣)。In the production method of quaternary ammonium hydroxide by such electrolysis, the halide ions (specifically chloride ions) in the raw material compartment pass through the anion exchange membrane separating the anode side and move to the anode compartment by the following formula: 2X - → X 2 + 2e - the electrode reaction shown halogen gas (e.g. chlorine).

此時,上述陰離子交換膜通常使用如下之複合膜:將成為陰離子交換交聯樹脂之前驅物的聚合性組合物塗佈於高空隙基材而進行聚合,並視需要導入陰離子交換基之複合膜。還提出了視情況使用如下之陰離子交換膜之方法:為了賦予對於陽極室所產生之次鹵酸(例如次氯酸)之耐劣化性,於該膜表面設置有耐氧化性高之層的陰離子交換膜(例如參照專利文獻2、3)。於如此地使用於膜表面設置有耐氧化性層之陰離子交換膜之情形時,為了賦予與陽極液中所含之次鹵酸接觸之耐劣化性,該配置必然地使該耐氧化性層朝向陽極側(專利文獻2之第3頁左上欄第7~12行、專利文獻3之請求項1)。 [先前技術文獻] [專利文獻]At this time, the above-mentioned anion exchange membranes usually use the following composite membranes: a polymerizable composition that becomes the precursor of an anion exchange crosslinked resin is coated on a high-void substrate for polymerization, and anion exchange groups are introduced as necessary. . It has also been proposed to use the following anion exchange membrane as appropriate: in order to impart degradation resistance to hypohalous acid (such as hypochlorous acid) generated in the anode compartment, an anion layer with high oxidation resistance is provided on the surface of the membrane Exchange membrane (for example, refer to Patent Documents 2 and 3). When used in the case of an anion exchange membrane with an oxidation resistant layer provided on the membrane surface, in order to impart deterioration resistance in contact with hypohalous acid contained in the anolyte, this arrangement inevitably makes the oxidation resistant layer face Anode side (Patent Document 2, page 3, upper left column, lines 7-12, Patent Document 3, claim 1). [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開平1-87793號公報 [專利文獻2]日本專利特開平1-87796號公報 [專利文獻3]日本專利特開2009-13477號公報[Patent Document 1] Japanese Patent Laid-Open No. 1-87793 [Patent Document 2] Japanese Patent Laid-Open No. 1-87796 [Patent Document 3] Japanese Patent Laid-Open No. 2009-13477

[發明所欲解決之問題][The problem to be solved by the invention]

當然,雖然陰離子交換膜呈現以容易使陰離子透過且難以使陽離子透過之性狀,但是儘管如此,與其他金屬陽離子相比質子亦很容易透過。因此,於藉由上述電解製造氫氧化四級銨時,不可避免一定量之質子通過該陰離子交換膜,自陽極室移動到原料室一側。因此導致電流效率降低。Of course, although the anion exchange membrane has the properties of allowing anions to pass through and it is difficult to pass cations, nevertheless, compared with other metal cations, protons can easily pass through. Therefore, when quaternary ammonium hydroxide is produced by the above-mentioned electrolysis, it is inevitable that a certain amount of protons will pass through the anion exchange membrane and move from the anode chamber to the raw material chamber side. Therefore, the current efficiency is reduced.

根據本發明者等之研究,該現象於使用於該膜表面形成有耐氧化性層之膜作為上述陰離子交換膜之情形時,亦不會發生根本性變化。即,其原因在於:雖然於膜表面之耐氧化性層中亦可具有抑制質子通過之作用,但即使於此情形時,由於如上所述地以該耐氧化性層朝向陽極側之方式配置該等陰離子交換膜,故雖然於電解之初始發揮該質子透過抑制效果,但若長時間地持續運轉,則即使膜表面為耐氧化性層,亦會逐漸受到氧化劣化之影響,從而逐漸失去上述質子透過抑制效果。According to research conducted by the inventors, this phenomenon does not fundamentally change when a membrane with an oxidation-resistant layer formed on the surface of the membrane is used as the anion exchange membrane. That is, the reason is that although the oxidation-resistant layer on the surface of the film may also have the effect of inhibiting the passage of protons, even in this case, the oxidation-resistant layer is arranged so as to face the anode side as described above. As an anion exchange membrane, although the proton permeation suppression effect is exerted at the beginning of electrolysis, if it is operated continuously for a long time, even if the surface of the membrane is an oxidation-resistant layer, it will gradually be affected by oxidative degradation and gradually lose the protons mentioned above. Through the suppression effect.

基於以上之背景,本發明之目的在於開發一種利用電解之氫氧化四級銨之製造方法,其能夠高度地抑制質子自陽極室向原料室側透過,即使長時間持續上述製造亦可良好地維持該透過抑制作用,能夠以優異之電流效率穩定地製造上述目標物。 [解決問題之技術手段]Based on the above background, the purpose of the present invention is to develop a production method of quaternary ammonium hydroxide using electrolysis, which can highly inhibit the permeation of protons from the anode chamber to the raw material chamber, and maintain the above-mentioned production well even if the production is continued for a long time. This penetration suppression effect makes it possible to stably manufacture the above-mentioned target with excellent current efficiency. [Technical means to solve the problem]

鑒於上述課題,本發明持續進行銳意研究。其結果,發現使用於一側之膜表面形成有質子透過抑制層之膜作為陰離子交換膜,並將該膜以形成有該質子透過抑制層之面朝向陰極側之方式進行配置,藉此可良好地解決上述課題,從而完成本發明。In view of the above-mentioned problems, the present invention continues to make intensive research. As a result, it was found that a membrane with a proton permeation inhibiting layer formed on one side of the membrane is used as an anion exchange membrane, and the membrane is arranged such that the surface on which the proton permeation inhibiting layer is formed faces the cathode side, thereby achieving good The above-mentioned problems have been solved, and the present invention has been completed.

即,本發明係關於一種氫氧化四級銨之製造方法,其係於電極間配置陰離子交換膜及陽離子交換膜而構成之電解槽中,向由陰離子交換膜與陽離子交換膜分隔之室供給鹵化四級銨之水溶液而進行電解,藉此製造氫氧化四級銨之方法; 該製造方法之特徵在於:將於其一側之膜表面形成有質子透過抑制層之膜,以形成有該質子透過抑制層之面朝向陰極側之方式進行配置,以此態樣使用該膜作為上述陰離子交換膜而進行電解。That is, the present invention relates to a method for producing quaternary ammonium hydroxide, which is in an electrolytic cell composed of an anion exchange membrane and a cation exchange membrane arranged between the electrodes, and supplies halogenation to a chamber separated by the anion exchange membrane and the cation exchange membrane. A method of electrolyzing an aqueous solution of quaternary ammonium to produce quaternary ammonium hydroxide; The manufacturing method is characterized in that: a membrane with a proton permeation suppression layer formed on the surface of the membrane on one side is arranged so that the surface on which the proton permeation suppression layer is formed faces the cathode side, and the film is used as The above-mentioned anion exchange membrane performs electrolysis.

又,本發明係關於一種氫氧化四級銨製造裝置,其係於電極間配置陰離子交換膜及陽離子交換膜,向由上述陰離子交換膜與陽離子交換膜分隔之室供給鹵化四級銨之水溶液而進行電解,藉此製造氫氧化四級銨之裝置; 該製造裝置之特徵在於:上述陰離子交換膜於陰極側表面具備質子透過抑制層。In addition, the present invention relates to a quaternary ammonium hydroxide production device, which is to arrange an anion exchange membrane and a cation exchange membrane between the electrodes, and supply an aqueous solution of quaternary ammonium halide to a compartment separated by the anion exchange membrane and the cation exchange membrane. Conduct electrolysis to produce a device for quaternary ammonium hydroxide; The manufacturing device is characterized in that the anion exchange membrane is provided with a proton permeation suppression layer on the cathode side surface.

如上所述,先前為了保護陰離子交換膜不受於陽極室所產生之次鹵酸等之影響,於陰離子交換膜之陽極側表面設置耐氧化性層。即,由於先前即使於陰極側設置耐氧化性層,亦無法保護陰離子膜不受於陽極室所產生之次鹵酸等之影響,故將耐氧化性層設置於陰離子交換膜之陽極側表面,而未考慮將耐氧化性層設置於陰極側。另一方面,本發明於抑制質子自陽極室向原料室透過之全新構想下,先前之思想中無法想像地於陰離子交換膜之陰極側設置質子透過抑制層,藉此能夠以優異之電流效率長期穩定地製造氫氧化四級銨。 [發明之效果]As mentioned above, in order to protect the anion exchange membrane from the hypohalous acid generated in the anode compartment, an oxidation resistant layer was provided on the anode side surface of the anion exchange membrane. That is, since the oxidation resistant layer was previously provided on the cathode side, the anion membrane could not be protected from the hypohalogenous acid generated in the anode chamber, so the oxidation resistant layer was provided on the anode side surface of the anion exchange membrane. However, it is not considered that the oxidation resistant layer is provided on the cathode side. On the other hand, under the new concept of suppressing the penetration of protons from the anode chamber to the raw material chamber in the present invention, a proton-permeation suppression layer is unimaginably provided on the cathode side of the anion exchange membrane in the previous ideas, thereby being able to achieve long-term excellent current efficiency Stable production of quaternary ammonium hydroxide. [Effects of Invention]

根據本發明,於利用電解之氫氧化四級銨之製造方法中,可高度抑制質子自陽極室向原料室透過,從而以優異之電流效率進行運轉。並且,即使長時間持續運轉,亦能良好地維持該質子之透過抑制效果。因此,作為氫氧化四級銨之穩定之製造方法,本發明之工業上之利用價值極大。According to the present invention, in the production method of quaternary ammonium hydroxide using electrolysis, the penetration of protons from the anode chamber to the raw material chamber can be highly suppressed, thereby operating with excellent current efficiency. Moreover, even if the operation is continued for a long time, the proton permeation suppression effect can be maintained well. Therefore, as a stable manufacturing method of quaternary ammonium hydroxide, the industrial use value of the present invention is extremely great.

於圖1之概略說明圖所示之電解裝置中,於陽極1與陰極2之間,於陽極側配置有陰離子交換膜A,於陰極側配置有陽離子交換膜C1。藉此,於陰離子交換膜A與陽離子交換膜C1之間形成有原料室5,於陰離子交換膜A與陽極1之間形成有陽極室4。又,於陽離子交換膜C1與陰極2之間鄰接有陰極室6。In the electrolysis apparatus shown in the schematic explanatory diagram of FIG. 1, between the anode 1 and the cathode 2, an anion exchange membrane A is arranged on the anode side, and a cation exchange membrane C1 is arranged on the cathode side. Thereby, the raw material chamber 5 is formed between the anion exchange membrane A and the cation exchange membrane C1, and the anode chamber 4 is formed between the anion exchange membrane A and the anode 1. In addition, a cathode chamber 6 is adjacent to between the cation exchange membrane C1 and the cathode 2.

於本發明之製造方法中,使用如上所述而構成之電解裝置,向原料室5供給成為原料之鹵化四級銨之水溶液,向陽極室4供給酸之水溶液,進而向陰極室6供給氫氧化四級銨之水溶液。然後,於該狀態下於陽極1及陰極2之間施加特定電壓,以特定電流密度進行電解。In the manufacturing method of the present invention, the electrolysis device constructed as described above is used to supply an aqueous solution of quaternary ammonium halide used as a raw material to the raw material chamber 5, to supply an acidic aqueous solution to the anode chamber 4, and to supply hydroxide to the cathode chamber 6. Aqueous solution of quaternary ammonium. Then, in this state, a specific voltage is applied between the anode 1 and the cathode 2, and electrolysis is performed at a specific current density.

又,如表示本發明之其他態樣之圖2所示,亦可於電解裝置中,以提高陰離子交換膜A之耐久性為目的,於陽極1與陰離子交換膜A之間配置陽離子交換膜C2。於此情形時,於陽離子交換膜C2與陰離子交換膜A之間之酸室7中生成酸,供給純水以使其濃度保持恆定。In addition, as shown in FIG. 2 showing other aspects of the present invention, in an electrolysis device, for the purpose of improving the durability of the anion exchange membrane A, a cation exchange membrane C2 may be arranged between the anode 1 and the anion exchange membrane A. . In this case, acid is generated in the acid chamber 7 between the cation exchange membrane C2 and the anion exchange membrane A, and pure water is supplied to keep the concentration constant.

於上述電解裝置中所使用之電極中,陽極可無限制地使用於氧化氛圍下穩定之電極。例如,可列舉碳、塗佈有鉑之鈦板、將Ru、Ir等塗佈於鈦板上之不溶性陽極。另一方面,陰極可無限制而使用於強鹼性氛圍下穩定且通電壓低之電極。例如,可列舉SUS316、鉑板、塗佈有鉑之鎳板等不溶性的用於鹽電解的活性陰極。該等電極之形狀可無限制地應用板狀、網狀、簾狀及其他公知之形狀。Among the electrodes used in the above-mentioned electrolysis device, the anode can be used without limitation as an electrode that is stable in an oxidizing atmosphere. For example, carbon, a titanium plate coated with platinum, and an insoluble anode in which Ru, Ir, etc. are coated on a titanium plate can be cited. On the other hand, the cathode can be used without limitation in a stable and low-voltage electrode under a strong alkaline atmosphere. For example, insoluble active cathodes for salt electrolysis, such as SUS316, platinum plates, and nickel plates coated with platinum, can be cited. The shape of the electrodes can be plate-shaped, mesh-shaped, curtain-shaped, and other well-known shapes without limitation.

再者,作為於上述電解裝置中所使用之陽離子交換膜,可為其本身為人所公知者,例如,具有於上述高空隙基材之空隙填充有陽離子交換樹脂之結構者。上述陽離子交換樹脂較佳為導入有烴系或氟系之樹脂者,特別是從耐酸、耐鹼性等觀點來看,較好為使用全氟碳系樹脂等氟系樹脂者。Furthermore, as the cation exchange membrane used in the above-mentioned electrolysis device, it may be a well-known one, for example, one having a structure in which the voids of the above-mentioned high void substrate are filled with a cation exchange resin. The above-mentioned cation exchange resin is preferably one having a hydrocarbon-based or fluorine-based resin introduced, and particularly from the viewpoint of acid resistance, alkali resistance, etc., a fluorine-based resin such as a perfluorocarbon-based resin is preferably used.

於本發明中,作為原料之四級銨鹽,例如可使用下述通式(1)所表示者: [R4 N+ ]・X- (1) (式中,R表示烷基、羥烷基或芳基,4個R可係相同之基亦可係互不相同之基,X係鹵素)。 R所表示之基中,烷基較佳為甲基、乙基、丙基及丁基等碳數為4以下者。羥烷基較佳為上述烷基之羥基取代體。芳基較佳為苯基、苄基、甲苯基等碳數為6~7者。作為鹵素,可為氯、溴及氟等之任一者,通常為氯或溴。In the present invention, a quaternary ammonium salt as raw materials, for example, the following general formula (1) is represented by: [R 4 N +] · X - (1) ( wherein, R represents an alkyl, hydroxyalkyl Group or aryl group, the 4 Rs may be the same group or different groups, X is a halogen). Among the groups represented by R, the alkyl group is preferably one having 4 or less carbon atoms such as methyl, ethyl, propyl, and butyl. The hydroxyalkyl group is preferably a hydroxy substituent of the above-mentioned alkyl group. The aryl group is preferably one having 6 to 7 carbon atoms such as phenyl, benzyl, and tolyl. The halogen may be any of chlorine, bromine, fluorine, etc., and is usually chlorine or bromine.

作為該四級銨鹽之代表例,可列舉鹵化四甲基銨、鹵化四乙基銨、鹵化四丙基銨、鹵化四丁基銨等。As representative examples of the quaternary ammonium salt, tetramethylammonium halide, tetraethylammonium halide, tetrapropylammonium halide, tetrabutylammonium halide, and the like can be cited.

藉由本發明之製造方法,將上述通式(1)之四級銨鹽作為原料,製造下述通式(2)所表示之氫氧化四級銨: [R4 N+ ]・OH- (2) (式中,R與上述通式(1)所示者相同)。 例如,製造氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化四丁基銨等。With the manufacturing method of the present invention, the quaternary ammonium salt in the general formula (1) as the starting material for producing the following general formula (2) is of a quaternary ammonium hydroxide: [R 4 N +] · OH - (2 ) (In the formula, R is the same as that shown in the above general formula (1)). For example, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, etc. are produced.

以下,藉由如圖1及圖2所示之使用氯化四甲基銨(TMAC)作為原料,將其供至電解而製造氫氧化四級銨之例子,對本發明之原理加以說明。Hereinafter, the principle of the present invention will be explained by using tetramethylammonium chloride (TMAC) as a raw material as shown in FIGS. 1 and 2 and supplying it to electrolysis to produce quaternary ammonium hydroxide.

向原料室5供給上述TMAC之水溶液,同時向陽極室4及酸室7供給酸之水溶液,進而向陰極室6供給氫氧化四甲基銨(TMAH)之水溶液,於該狀態下,於陽極1及陰極2之間施加特定之電壓。電流密度較佳為1~50 A/dm2 ,電解裝置內之溫度較佳為保持為不超過90℃。供給至原料室5之四級銨鹽之濃度理想的是通常為0.2~5.0當量,更佳為1.0~4.0當量。於該濃度過低之情形及過高之情形時,由於液體之電導率變低,溶液之電阻變大,故電解之效率性降低。The above-mentioned TMAC aqueous solution is supplied to the raw material chamber 5, while the acid aqueous solution is supplied to the anode chamber 4 and the acid chamber 7, and then the tetramethylammonium hydroxide (TMAH) aqueous solution is supplied to the cathode chamber 6. In this state, the anode 1 A specific voltage is applied between the cathode and the cathode 2. The current density is preferably 1-50 A/dm 2 , and the temperature in the electrolysis device is preferably maintained at no more than 90°C. It is desirable that the concentration of the quaternary ammonium salt supplied to the raw material compartment 5 is usually 0.2 to 5.0 equivalents, more preferably 1.0 to 4.0 equivalents. When the concentration is too low or too high, the conductivity of the liquid becomes lower and the resistance of the solution becomes larger, so the efficiency of electrolysis decreases.

當如上所述進行電解時,四甲基銨離子(TMA+ )通過陽離子交換膜Cl,自原料室5向陰極室6移動,於陰極2發生下述式: TMA+ +H2 O+e- →TMAH+1/2H2 所表示之電極反應,獲得氫氧化四甲基銨(TMAH)。雖然向陰極室供給氫氧化四級銨之水溶液,但若該氫氧化四級銨之濃度變高則會導致電流效率降低,因此較佳為通常調節為0.1~4.5當量。When the electrolysis described above, tetramethylammonium ions (TMA +) cation exchange membrane Cl, feed chamber 5, the following expression occurs from the cathode 2 move to the cathode chamber 6: TMA + + H 2 O + e - → The electrode represented by TMAH+1/2H 2 reacts to obtain tetramethylammonium hydroxide (TMAH). Although an aqueous solution of quaternary ammonium hydroxide is supplied to the cathode chamber, if the concentration of the quaternary ammonium hydroxide becomes higher, the current efficiency will decrease. Therefore, it is generally preferable to adjust the quaternary ammonium hydroxide to 0.1 to 4.5 equivalents.

於圖1中,原料室5中之氯化物離子(Cl- )通過陰離子交換膜A,移動至陽極室4。於該陽極室4,Cl- 藉由下述式: 2Cl- →Cl2 +2e- 所表示之電極反應變成氯氣(Cl2 )。使用鹽酸、硫酸、磷酸等無機酸或甲酸、乙酸等有機酸作為陽極室4中所使用之酸。酸之濃度處於0.05~3.0當量之範圍內,特別是為了將陰離子交換膜A之電流效率保持得較高,較佳為使用0.1~1.0當量之酸。再者,此處所記載之陰離子交換膜A之電流效率係表示透過陰離子交換膜A之離子中的鹵化物離子透過之比率。如此,由於陽極室4為酸液,因此如上所述,一部分如下述式: Cl2 +H2 O→HCl+HClO 所示地生成氧化力強之次氯酸。In FIG. 1, the chloride ions (Cl ) in the raw material compartment 5 pass through the anion exchange membrane A and move to the anode compartment 4. To the anode chamber 4, Cl - by the following equation: 2Cl - → Cl 2 + 2e - represented by the electrode reaction becomes chlorine gas (Cl 2). As the acid used in the anode chamber 4, inorganic acids such as hydrochloric acid, sulfuric acid, and phosphoric acid, or organic acids such as formic acid and acetic acid are used. The concentration of the acid is in the range of 0.05-3.0 equivalents. Especially in order to keep the current efficiency of the anion exchange membrane A high, it is preferable to use 0.1-1.0 equivalents of acid. Furthermore, the current efficiency of the anion exchange membrane A described herein refers to the ratio of halide ions in the ions that pass through the anion exchange membrane A. In this way, since the anode chamber 4 is an acid solution, as described above, a part of it is represented by the following formula: Cl 2 +H 2 O→HCl+HClO, and hypochlorous acid with strong oxidizing power is generated.

如圖2所示,於陽極1與陰離子交換膜A之間配置有陽離子交換膜C2之情形時,原料室5之Cl- 通過陰離子交換膜A而移動至酸室7。又,於陽極室4,被供給稀的酸水溶液(例如硫酸水溶液),質子通過陽離子交換膜C2而移動至酸室7。其結果,於酸室7生成酸(HCl)。使用鹽酸、硫酸、磷酸等無機酸或甲酸、乙酸等有機酸作為酸室7中所使用之酸,濃度處於0.05~3.0當量之範圍內,特別是為了將陰離子交換膜A之電流效率保持得較高,較佳為使用0.1~1.0當量之酸。As shown in FIG. 2, when the cation exchange membrane C2 is arranged between the anode 1 and the anion exchange membrane A, the Cl − in the raw material chamber 5 moves to the acid chamber 7 through the anion exchange membrane A. In addition, a dilute acid aqueous solution (for example, a sulfuric acid aqueous solution) is supplied to the anode chamber 4, and protons move to the acid chamber 7 through the cation exchange membrane C2. As a result, acid (HCl) is generated in the acid chamber 7. Use mineral acids such as hydrochloric acid, sulfuric acid, phosphoric acid, or organic acids such as formic acid, acetic acid, etc. as the acid used in the acid chamber 7. The concentration is in the range of 0.05 to 3.0 equivalents, especially to keep the current efficiency of the anion exchange membrane A relatively high. High, preferably 0.1 to 1.0 equivalent of acid is used.

於圖1中將透過陰離子交換膜A之Cl- 全部供給至陽極1,相對於此,於圖2中,移動至酸室7之Cl- 之一部分由於電場之作用,透過陽離子交換膜C2向陽極室4侵入。因此,作為所生成之氯氣量,圖2之態樣變少。 In Fig. 1, all the Cl-that has passed through the anion exchange membrane A is supplied to the anode 1. In contrast, in Fig. 2, a part of the Cl- that has moved to the acid chamber 7 passes through the cation exchange membrane C2 to the anode due to the action of the electric field. Room 4 invaded. Therefore, as the amount of generated chlorine gas, the aspect shown in Fig. 2 is reduced.

本發明之最大特徵在於:於以上說明之利用電解之氫氧化四級銨之製造中,陰離子交換膜A使用於其一側之膜表面形成有質子(H+ )透過抑制層9者,並將該膜以形成有該質子透過抑制層9之面朝向陰極側之方式進行配置。即,由於該質子透過抑制層9之存在,於上述氫氧化四級銨之製造中,成為電流效率降低之原因的質子自陽極室4向原料室5透過現象得到較大程度之抑制。並且,該質子透過抑制層9如後文所述那樣,較佳的是設置為高交聯樹脂層,因此多數情況下本來就耐氧化性優異。此外,於本發明中,由於該配置係形成有該質子透過抑制層9之面朝向陰極側(換而言之,面向原料室5)者,因此該層與在陽極室4中生成之次鹵酸之接觸本身亦被大幅抑制。其結果,良好地維持了陰離子交換膜A之上述質子之透過抑制效果,即使長時間持續運轉,電流效率降低之問題亦得到較大程度之改善。The biggest feature of the present invention is that in the production of quaternary ammonium hydroxide using electrolysis as described above, the anion exchange membrane A is used on one side of the membrane surface with proton (H + ) permeation suppression layer 9 formed, and The membrane is arranged such that the surface on which the proton permeation suppression layer 9 is formed faces the cathode side. That is, due to the presence of the proton permeation suppression layer 9, in the production of the above-mentioned quaternary ammonium hydroxide, the permeation of protons from the anode chamber 4 to the raw material chamber 5, which is the cause of the decrease in current efficiency, is largely suppressed. In addition, the proton permeation suppression layer 9 is preferably provided as a highly cross-linked resin layer as described later, and therefore, it is inherently excellent in oxidation resistance in many cases. In addition, in the present invention, since the surface on which the proton permeation suppression layer 9 is formed faces the cathode side (in other words, faces the raw material chamber 5), this layer is in line with the hypohalogen generated in the anode chamber 4 The acid contact itself is also greatly suppressed. As a result, the above-mentioned proton permeation suppression effect of the anion exchange membrane A is well maintained, and even if the operation is continued for a long time, the problem of reduced current efficiency is greatly improved.

相反,以形成有質子透過抑制層9之面朝向陽極側之方式進行配置時,於電解之初始,雖然由於相同質子透過抑制層9之作用,以一定程度之水準發揮質子透過抑制效果,但若長時間持續運轉,則該效果會逐漸降低。即,其原因在於:次鹵酸之氧化劣化作用非常強,即使質子透過抑制層9是例如耐氧化性優異之高交聯樹脂層等,若使其朝向陽極室而於與次鹵酸大量接觸之環境下長期運轉,仍無法避免其逐漸劣化。On the contrary, when the surface on which the proton permeation suppression layer 9 is formed faces the anode side, at the beginning of electrolysis, the proton permeation suppression effect is exerted to a certain level due to the effect of the same proton permeation suppression layer 9, but if Long-term continuous operation, the effect will gradually decrease. That is, the reason is that the oxidative degradation effect of hypohalous acid is very strong, even if the proton permeation suppression layer 9 is a highly crosslinked resin layer with excellent oxidation resistance, if it is directed toward the anode chamber, it will come into contact with hypohalous acid in a large amount. It is still unavoidable to gradually deteriorate after long-term operation under the environment.

陰離子交換膜A包括基體層10、及形成於基體層10之一側之膜表面的質子透過抑制層9。此處,質子透過抑制層9定義為質子透過性比基體層10部分低之層。於陰離子交換膜中,為了使膜表面之質子透過性以此方式降低,較佳為提高交聯度等,使與陰離子交換基親和之含水率降低。藉此,可將陰離子之透過性確保為一定程度,同時相對地抑制質子之透過性。The anion exchange membrane A includes a base layer 10 and a proton permeation suppression layer 9 formed on the membrane surface on one side of the base layer 10. Here, the proton permeation suppression layer 9 is defined as a layer having a lower proton permeability than that of the base layer 10. In the anion exchange membrane, in order to reduce the proton permeability of the membrane surface in this way, it is preferable to increase the degree of crosslinking, etc., so as to reduce the water content of affinity with the anion exchange group. Thereby, the permeability of anions can be ensured to a certain level, while the permeability of protons is relatively suppressed.

此種於膜表面形成有質子透過抑制層之陰離子交換膜A較佳為藉由以下方法獲得。即,該方法係對於使包含具有鹵代烷基之芳香族聚合性單體與交聯性聚合性單體之聚合性組合物聚合而獲得的陰離子交換基導入用原膜,使二烷基胺化合物或多胺化合物與其一側之膜表面接觸,於其表面形成交聯比內部高之高交聯樹脂層,然後使三烷基胺與膜中剩餘之鹵代烷基接觸,將其轉化為四級銨基。根據該方法,於上述陰離子交換基導入用原膜中,存在於其一側之膜表面部之鹵代烷基以一定比率與二烷基胺化合物或多胺化合物接觸,從而於交聯過程中被消耗。因此,膜表面部由於交聯而成為緻密之結構,因此上述含水量降低,成為對質子透過抑制而言特別優異之層。Such an anion exchange membrane A with a proton permeation suppression layer formed on the membrane surface is preferably obtained by the following method. That is, this method is based on the original membrane for introduction of anion exchange groups obtained by polymerizing a polymerizable composition containing an aromatic polymerizable monomer having a halogenated alkyl group and a crosslinkable polymerizable monomer, and the dialkylamine compound or The polyamine compound contacts the film surface on one side to form a highly crosslinked resin layer on its surface with a higher crosslinking ratio than the inside. Then, the trialkylamine is brought into contact with the remaining haloalkyl groups in the film to convert it into a quaternary ammonium group. . According to this method, in the above-mentioned original membrane for anion exchange group introduction, the haloalkyl group existing on the membrane surface part of one side is contacted with the dialkylamine compound or polyamine compound at a certain ratio and is consumed in the crosslinking process. . Therefore, the film surface portion becomes a dense structure due to crosslinking, and therefore the water content is reduced, and it becomes a layer that is particularly excellent for inhibiting proton permeation.

於該方法中,上述具有鹵代烷基之芳香族聚合性單體可無限制地使用公知者。烷基之碳數較佳為1~8,作為對其進行取代之鹵素原子,可列舉氯、溴、碘等。此種鹵代烷基係氯甲基、溴甲基、碘甲基、氯乙基、溴乙基、碘乙基、氯丙基、溴丙基、碘丙基、氯丁基、溴丁基、碘丁基、氯戊基、溴戊基、碘戊基、氯己基、溴己基、碘己基等。具有此種鹵代烷基之芳香族聚合性單體之具體例可列舉:氯甲基苯乙烯、溴甲基苯乙烯、碘甲基苯乙烯、氯乙基苯乙烯、溴乙基苯乙烯、碘乙基苯乙烯、氯丙基苯乙烯、溴丙基苯乙烯、碘丙基苯乙烯、氯丁基苯乙烯、溴丁基苯乙烯、碘丁基苯乙烯、氯戊基苯乙烯、溴戊基苯乙烯、碘戊基苯乙烯、氯己基苯乙烯、溴己基苯乙烯、碘己基苯乙烯等,其中尤佳為使用:氯甲基苯乙烯、溴甲基苯乙烯、碘甲基苯乙烯、氯乙基苯乙烯、溴乙基苯乙烯、碘乙基苯乙烯、氯丙基苯乙烯、溴丙基苯乙烯、碘丙基苯乙烯、氯丁基苯乙烯、溴丁基苯乙烯、碘丁基苯乙烯。In this method, the above-mentioned aromatic polymerizable monomer having a halogenated alkyl group can be used without limitation. The number of carbon atoms in the alkyl group is preferably from 1 to 8, and examples of the halogen atom to be substituted include chlorine, bromine, and iodine. Such halogenated alkyl groups are chloromethyl, bromomethyl, iodomethyl, chloroethyl, bromoethyl, iodoethyl, chloropropyl, bromopropyl, iodopropyl, chlorobutyl, bromobutyl, iodine Butyl, chloropentyl, bromopentyl, iodopentyl, chlorohexyl, bromohexyl, iodohexyl, etc. Specific examples of aromatic polymerizable monomers having such halogenated alkyl groups include: chloromethyl styrene, bromomethyl styrene, iodomethyl styrene, chloroethyl styrene, bromoethyl styrene, and ethyl iodide. Butyl styrene, chloropropyl styrene, bromopropyl styrene, iodopropyl styrene, chlorobutyl styrene, bromobutyl styrene, iodobutyl styrene, chloropentyl styrene, bromopentyl benzene Ethylene, iodopentyl styrene, chlorohexyl styrene, bromohexyl styrene, iodohexyl styrene, etc., among which the use of chloromethyl styrene, bromomethyl styrene, iodomethyl styrene, ethyl chloride is particularly preferred Butyl styrene, bromoethyl styrene, iodoethyl styrene, chloropropyl styrene, bromopropyl styrene, iodopropyl styrene, chlorobutyl styrene, bromobutyl styrene, iodobutyl benzene Vinyl.

至於使上述聚合性組合物聚合而獲得之陰離子交換基導入用原膜,其來自上述具有鹵代烷基之芳香族聚合性單體而於膜中具有鹵代烷基,如後文所述地將該鹵代烷基轉化為陰離子交換基,即四級銨基。該四級銨基係強鹼性基,作為陰離子交換基而特別優異,但於還期望存在除此以外之陰離子交換基之情形時,於聚合性組合物中,除了上述具有鹵代烷基之芳香族聚合性單體以外,亦可併用具有其他陰離子交換基之聚合性單體或具有可導入其他陰離子交換基之官能基的聚合性單體。作為此種除四級銨基以外之陰離子交換基,若為可於水溶液中成為負或正電荷之官能基,則無特別限制,例如可列舉一級~三級胺基、吡啶基、咪唑基、四級吡啶鎓基等。As for the original membrane for introduction of anion exchange groups obtained by polymerizing the above-mentioned polymerizable composition, it is derived from the above-mentioned aromatic polymerizable monomer having a halogenated alkyl group and has a halogenated alkyl group in the film, and the halogenated alkyl group is described later. Converted into anion exchange group, that is, quaternary ammonium group. The quaternary ammonium-based strongly basic group is particularly excellent as an anion exchange group. However, when it is desired to have anion exchange group other than this, in the polymerizable composition, in addition to the above-mentioned aromatic halogenated alkyl group In addition to the polymerizable monomer, a polymerizable monomer having another anion exchange group or a polymerizable monomer having a functional group into which another anion exchange group can be introduced may also be used in combination. The anion exchange group other than the quaternary ammonium group is not particularly limited as long as it is a functional group that can become negatively or positively charged in an aqueous solution. Examples include primary to tertiary amino groups, pyridyl groups, imidazole groups, Quaternary pyridinium group and so on.

作為此種具有其他陰離子交換基之單體,具體可列舉:胺基苯乙烯、烷基胺基苯乙烯、二烷基胺基苯乙烯、三烷基胺基苯乙烯、乙烯基苄基三甲胺、乙烯基苄基三乙胺等胺系單體;乙烯基吡啶、甲基乙烯基吡啶、乙基乙烯基吡啶、乙烯基吡咯啶酮、乙烯基咔唑、乙烯基咪唑等含氮雜環系單體、該等單體之鹽類及酯類等。Specific examples of such monomers having other anion exchange groups include: amino styrene, alkyl amino styrene, dialkyl amino styrene, trialkyl amino styrene, vinyl benzyl trimethyl amine , Vinylbenzyl triethylamine and other amine monomers; vinyl pyridine, methyl vinyl pyridine, ethyl vinyl pyridine, vinyl pyrrolidone, vinyl carbazole, vinyl imidazole and other nitrogen-containing heterocyclic systems Monomers, salts and esters of these monomers, etc.

又,作為具有可導入其他陰離子交換基之官能基的聚合性單體,可適宜地使用苯乙烯、向該苯乙烯之芳香環或乙烯基導入鹵基、烷基或鹵烷基等取代基而成之苯乙烯取代體等。具體而言,可列舉苯乙烯、乙烯基甲苯、氯甲基苯乙烯等。此外,亦可使用乙烯基吡啶、乙烯基咪唑、α-甲基苯乙烯、乙烯基萘、丙烯醯胺、乙烯基吡咯啶酮、甲基乙烯基酮等。In addition, as a polymerizable monomer having a functional group into which other anion exchange groups can be introduced, styrene can be suitably used, and substituents such as halogen, alkyl, or haloalkyl can be introduced into the aromatic ring or vinyl of the styrene. Into the styrene substitution body and so on. Specifically, styrene, vinyl toluene, chloromethyl styrene, etc. are mentioned. In addition, vinyl pyridine, vinyl imidazole, α-methyl styrene, vinyl naphthalene, acrylamide, vinyl pyrrolidone, methyl vinyl ketone, and the like can also be used.

於聚合性組合物中,該等具有其他陰離子交換基之聚合性單體或具有可導入其他陰離子交換基之官能基的聚合性單體之調配量並無特別限制,相對於上述具有鹵代烷基之芳香族聚合性單體之100質量份而言,較佳為100質量份以下,更佳為50質量份以下。In the polymerizable composition, the amount of the polymerizable monomers having other anion exchange groups or the polymerizable monomers having functional groups that can be introduced into other anion exchange groups is not particularly limited. For 100 parts by mass of the aromatic polymerizable monomer, it is preferably 100 parts by mass or less, and more preferably 50 parts by mass or less.

進而,於聚合性組合物中,除該等用以向陰離子交換膜中導入陰離子交換基之聚合性單體以外,亦可視需要調配不直接參與此種導入陰離子交換膜之聚合性單體。作為此種不參與導入陰離子交換膜之聚合性單體,例如可列舉苯乙烯、丙烯腈、甲基苯乙烯、丙烯醛、甲基乙烯基酮、乙烯基聯苯等。Furthermore, in the polymerizable composition, in addition to the polymerizable monomers used to introduce anion exchange groups into the anion exchange membrane, polymerizable monomers that do not directly participate in the introduction of such anion exchange membranes can also be prepared as needed. Examples of such polymerizable monomers that do not participate in the introduction of the anion exchange membrane include styrene, acrylonitrile, methyl styrene, acrolein, methyl vinyl ketone, and vinyl biphenyl.

於聚合性組合物中,該等不直接參與導入陰離子交換膜之聚合性單體的調配量並無特別限制,相對於上述具有鹵代烷基之芳香族聚合性單體100質量份而言,較佳為400質量份以下,更佳為150質量份以下。In the polymerizable composition, the amount of the polymerizable monomer that does not directly participate in the introduction of the anion exchange membrane is not particularly limited, and it is preferably relative to 100 parts by mass of the above-mentioned aromatic polymerizable monomer having a halogenated alkyl group. It is 400 parts by mass or less, more preferably 150 parts by mass or less.

於聚合性組合物中,為了增加所獲得之陰離子交換膜之緻密性而提高膜強度,較佳為使用交聯性聚合性單體。此種交聯性聚合性單體亦可無特別限制地使用先前公知之用於製造離子交換膜之單體。具體而言,例如可使用:間、對或鄰二乙烯苯、二乙烯基聯苯、二乙烯基碸、丁二烯、氯丁二烯、異戊二烯、三乙烯基苯、二乙烯基萘、二烯丙基胺、三烯丙基胺、二乙烯基吡啶或日本專利特開昭62-205153號公報等所揭示之具有3個以上乙烯基苄基之其他官能乙烯基苄基系化合物等。In the polymerizable composition, in order to increase the compactness of the obtained anion exchange membrane and increase the membrane strength, it is preferable to use a crosslinkable polymerizable monomer. As such a crosslinkable polymerizable monomer, a previously known monomer for producing an ion exchange membrane can also be used without particular limitation. Specifically, for example, meta-, p-, or o-divinylbenzene, divinyl biphenyl, divinyl sulfide, butadiene, chloroprene, isoprene, trivinylbenzene, divinyl benzene can be used Other functional vinylbenzyl compounds disclosed in naphthalene, diallylamine, triallylamine, divinylpyridine, or Japanese Patent Laid-Open No. 62-205153, etc., having 3 or more vinylbenzyl groups Wait.

若該等交聯性聚合性單體相對於具有鹵代烷基之芳香族聚合性單體調配得過多,則存在如下之虞:不僅導致陰離子交換膜之離子交換容量減少,而且有可能導致交聯度過高而使膜電阻增大,從而使耗電率變高。相反,若交聯性聚合性單體之調配比率過少,則亦存在如下之虞:不僅會導致膜之強度降低,而且由於與設置於膜表面之質子透過抑制層之交聯度不同,於含水狀態下之膨潤率差變得過大,有可能導致質子透過抑制層於內側產生較大翹曲而難以操作。因此,較佳為相對於包括具有鹵代烷基之芳香族聚合性單體、及上述所說明之視需要而併用之其他聚合性單體之合計的聚合性單體成分100質量份而言,調配5~40質量份,較佳為10~30質量份之交聯性聚合性單體。If these crosslinkable polymerizable monomers are blended too much with respect to the aromatic polymerizable monomers having halogenated alkyl groups, there is a risk that not only will the ion exchange capacity of the anion exchange membrane decrease, but the degree of crosslinking may also be caused If it is too high, the membrane resistance will increase, which will increase the power consumption rate. On the contrary, if the blending ratio of the crosslinkable polymerizable monomer is too small, there is a risk that not only will the strength of the membrane be reduced, but also the degree of crosslinking is different from that of the proton permeation inhibiting layer provided on the membrane surface. The difference in the swelling rate in the state becomes too large, which may cause the proton permeation suppression layer to warp on the inside and make it difficult to handle. Therefore, it is preferable to formulate 5 with respect to 100 parts by mass of the total polymerizable monomer component including an aromatic polymerizable monomer having a halogenated alkyl group and other polymerizable monomers used in combination as necessary as described above. ~40 parts by mass, preferably 10-30 parts by mass of a crosslinkable polymerizable monomer.

於聚合性組合物中,通常調配聚合起始劑。聚合起始劑可無特別限制地使用先前公知者,可考慮所使用之高空隙基材、成形條件等而適當選擇。作為其具體例,較佳為:對薄荷烷過氧化氫、二異丙基苯過氧化氫、α,α'-雙(第三丁基過氧基間異丙基)苯、二第三丁基過氧化物、第三丁基過氧化氫、二第三戊基過氧化物、第三丁基異丙苯基過氧化物、二異丙苯基過氧化物、2,5-二甲基-2,5-二(第三丁基過氧基)己烷、2,5-二甲基-2,5-二(第三丁基過氧基)己炔-3、異丙苯過氧化氫、1,1,3,3-四甲基丁基過氧化氫、2,5-二甲基-2,5-二氫過氧化己烷、2,5-二甲基-2,5-二氫過氧化己炔-3、過氧化苯甲醯、過氧化甲基乙基酮、過氧化甲基異丁基酮、環己烷過氧化物、甲基環己烷過氧化物、過氧化異丁基、過氧化2,4-二氯苯甲醯、過氧化鄰甲基苯甲醯、過氧化雙-3,5,5-三甲基己醯、過氧化月桂醯、過氧化對氯苯甲醯、1,1-二-第三丁基過氧基-三甲基環己烷、1,1-二-第三丁基過氧基環己烷、2,2-二-(第三丁基過氧基)-丁烷、4,4-二-第三丁基過氧化纈草酸正丁酯、過氧化苯氧基乙酸-2,4,4-三甲基戊酯、過氧化新癸酸α-異丙苯酯、過氧化新癸酸第三丁酯、過氧化特戊酸第三丁酯、過氧化2-乙基己酸第三丁酯、過氧化異丁酸第三丁酯、過氧化六氫對苯二甲酸二第三丁酯、過氧化壬二酸二第三丁酯、過氧化3,5,5-三甲基己酸第三丁酯、過氧化乙酸第三丁酯、過氧化苯甲酸第三丁酯等。將該等單獨或以2種以上之組合添加混合於單體漿料中。In the polymerizable composition, a polymerization initiator is usually blended. The polymerization initiator can be used without any particular limitation, and can be appropriately selected in consideration of the high void base material used, molding conditions, and the like. As specific examples thereof, preferred are: p-menthane hydroperoxide, diisopropylbenzene hydroperoxide, α,α'-bis(tert-butylperoxy m-isopropyl)benzene, di-tert-butyl Peroxide, tertiary butyl hydroperoxide, di-tertiary amyl peroxide, tertiary butyl cumyl peroxide, dicumyl peroxide, 2,5-dimethyl -2,5-bis(tert-butylperoxy)hexane, 2,5-dimethyl-2,5-bis(tert-butylperoxy)hexyne-3, cumene peroxide Hydrogen, 1,1,3,3-tetramethylbutyl hydroperoxide, 2,5-dimethyl-2,5-dihydroperoxyhexane, 2,5-dimethyl-2,5- Hexyne-3 dihydroperoxide, benzoyl peroxide, methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexane peroxide, methyl cyclohexane peroxide, peroxide Isobutyl, 2,4-dichlorobenzyl peroxide, o-methylbenzyl peroxide, bis-3,5,5-trimethylhexyl peroxide, lauryl peroxide, p-chlorine peroxide Benzoyl, 1,1-di-tert-butylperoxy-trimethylcyclohexane, 1,1-di-tert-butylperoxycyclohexane, 2,2-di-(the Tributylperoxy)-butane, 4,4-di-tert-butylperoxyvalerate n-butyl, peroxyphenoxyacetic acid-2,4,4-trimethylpentyl, peroxide Α-Cumyl neodecanoate, t-butyl peroxyneodecanoate, t-butyl peroxypivalate, t-butyl peroxy2-ethylhexanoate, third-butyl peroxyisobutyrate Butyl ester, di-tertiary butyl peroxide hexahydroterephthalate, di-tertiary butyl peroxide azelate, tertiary butyl peroxide 3,5,5-trimethylhexanoate, third butyl peroxyacetic acid Tributyl ester, tert-butyl peroxybenzoate, etc. These alone or in a combination of two or more are added and mixed in the monomer slurry.

至於如上所述之聚合起始劑之使用量,通常相對於上述聚合性單體成分100重量份而言較佳為0.1~30重量份,更佳為1~10重量份之範圍內。As for the usage amount of the above-mentioned polymerization initiator, it is usually in the range of preferably 0.1-30 parts by weight, and more preferably within the range of 1-10 parts by weight, relative to 100 parts by weight of the above-mentioned polymerizable monomer components.

又,於聚合性組合物中,亦可調配基質樹脂作為黏度調整劑。藉由調配此種基質樹脂,可提高聚合性組合物之塗佈性,防止將其塗佈於高空隙基材時之流掛等。In addition, in the polymerizable composition, a matrix resin can also be formulated as a viscosity modifier. By blending such a matrix resin, the coatability of the polymerizable composition can be improved, and sagging when it is applied to a substrate with high voids can be prevented.

作為此種基質樹脂,例如可使用:聚氯乙烯、氯化聚氯乙烯、乙烯-氯乙烯共聚物、氯乙烯系彈性體、氯化聚乙烯、氯磺化聚乙烯、乙烯-丙烯共聚物、聚丁烯等飽和脂肪族烴系聚合物、苯乙烯-丁二烯共聚物等苯乙烯系聚合物、及於該等上共聚如下單體而成者:乙烯基甲苯、乙烯基二甲苯、氯苯乙烯、氯甲基苯乙烯、α-甲基苯乙烯、α-鹵化苯乙烯、α,β,β'-三鹵化苯乙烯等苯乙烯系單體,乙烯、丁烯等單烯烴,或丁二烯、異戊二烯等共軛二烯烴等。又,亦可較佳地使用苯乙烯-丁二烯橡膠或其氫化橡膠、腈橡膠或其氫化腈橡膠、吡啶橡膠或其氫化橡膠、苯乙烯系熱塑性彈性體。As such a matrix resin, for example, polyvinyl chloride, chlorinated polyvinyl chloride, ethylene-vinyl chloride copolymer, vinyl chloride-based elastomer, chlorinated polyethylene, chlorosulfonated polyethylene, ethylene-propylene copolymer, Saturated aliphatic hydrocarbon polymers such as polybutene, styrene polymers such as styrene-butadiene copolymers, and copolymers of the following monomers: vinyl toluene, vinyl xylene, chlorine Styrenic monomers such as styrene, chloromethylstyrene, α-methylstyrene, α-halogenated styrene, α,β,β'-trihalogenated styrene, monoolefins such as ethylene and butene, or butylene Conjugated dienes such as diene and isoprene, etc. In addition, styrene-butadiene rubber or its hydrogenated rubber, nitrile rubber or its hydrogenated nitrile rubber, pyridine rubber or its hydrogenated rubber, or styrene-based thermoplastic elastomer can also be preferably used.

此處,苯乙烯系熱塑性彈性體係聚苯乙烯聚合物與苯乙烯與聚丁二烯、聚異戊二烯、乙烯基聚異戊二烯、乙烯-丁烯之交替共聚物、乙烯-丙烯之交替共聚物。例如,可例示聚苯乙烯-氫化聚丁二烯-聚苯乙烯共聚物、聚苯乙烯-(聚乙烯/丁烯橡膠)-聚苯乙烯共聚物、聚苯乙烯-氫化聚異戊二烯橡膠-聚苯乙烯共聚物、聚苯乙烯-(聚乙烯/丙烯橡膠)-聚苯乙烯共聚物、聚苯乙烯-聚乙烯-(聚乙烯/丙烯橡膠)-聚苯乙烯共聚物、聚苯乙烯-乙烯基聚異戊二烯-聚苯乙烯共聚物等。該基質樹脂之分子量並無特別限制,通常較佳為1,000~1,000,000、尤其是50,000~500,000之範圍。Here, the styrene-based thermoplastic elastomer system polystyrene polymer and the alternating copolymer of styrene and polybutadiene, polyisoprene, vinyl polyisoprene, ethylene-butene, ethylene-propylene Alternating copolymer. For example, polystyrene-hydrogenated polybutadiene-polystyrene copolymer, polystyrene-(polyethylene/butylene rubber)-polystyrene copolymer, polystyrene-hydrogenated polyisoprene rubber can be exemplified -Polystyrene copolymer, polystyrene-(polyethylene/propylene rubber)-polystyrene copolymer, polystyrene-polyethylene-(polyethylene/propylene rubber)-polystyrene copolymer, polystyrene- Vinyl polyisoprene-polystyrene copolymer, etc. The molecular weight of the matrix resin is not particularly limited, and is usually preferably in the range of 1,000 to 1,000,000, especially 50,000 to 500,000.

又,該基質樹脂以可確保適度之黏性之程度之量,與分子量對應地調配於聚合性組合物中,例如,其量係相對於上述聚合性單體成分100重量份而言較佳為1~50重量份,更佳為3~15質量份。In addition, the matrix resin is formulated in the polymerizable composition in an amount that can ensure a moderate viscosity according to the molecular weight. For example, the amount is preferably relative to 100 parts by weight of the polymerizable monomer component. 1 to 50 parts by weight, more preferably 3 to 15 parts by weight.

再者,於聚合性組合物中,除上述各種成分以外,亦可視需要調配:鄰苯二甲酸二辛酯、鄰苯二甲酸二丁酯、磷酸三丁酯、氧化苯乙烯、或脂肪酸或芳香族酸之醇酯等塑化劑,或有機溶劑等。Furthermore, in the polymerizable composition, in addition to the various ingredients mentioned above, it can also be formulated as needed: dioctyl phthalate, dibutyl phthalate, tributyl phosphate, styrene oxide, or fatty acid or aromatic Plasticizers such as alcohol esters of family acids, or organic solvents, etc.

又,於上述聚合性組合物中,為了補充由於上述具有鹵代烷基之芳香族聚合性單體之熱分解而生成之鹵素氣體或鹵化氫氣體,亦較佳為添加氧化苯乙烯、二乙二醇二縮水甘油醚等具有1個以上環氧基之化合物。In addition, in the polymerizable composition, in order to supplement the halogen gas or hydrogen halide gas generated by the thermal decomposition of the aromatic polymerizable monomer having a halogenated alkyl group, it is also preferable to add styrene oxide or diethylene glycol. Compounds with one or more epoxy groups such as diglycidyl ether.

將包含以上成分構成之聚合性組合物填充至包含高空隙材料之基材之空隙部後,進行聚合而獲得陰離子交換基導入用原膜。作為此種高空隙基材,亦可使用公知為離子交換膜之高空隙基材之任意材料,通常使用空隙率為20~90%,更佳為40~80%之支持材料。例如可列舉由聚氯乙烯、聚烯烴等形成之織布、不織布、多孔性膜、網狀物等。其中尤其是自能夠於不使膜電阻極端上升之情況下獲得較高之質子透過抑制效果之方法而言,較佳為使用多孔性膜。高空隙基材之厚度一般從5~300 μm之範圍內挑選,自保持膜電阻或強度之觀點等而言,較佳為70~250 μm。After the polymerizable composition composed of the above components is filled into the voids of the base material containing the high void material, polymerization is performed to obtain the original membrane for introducing anion exchange groups. As such a high-void substrate, any material known as a high-void substrate for ion exchange membranes can also be used. Generally, a support material with a porosity of 20 to 90%, and more preferably 40 to 80% is used. For example, woven fabrics, non-woven fabrics, porous films, nets, etc. formed of polyvinyl chloride, polyolefin, etc. can be cited. Among them, it is particularly preferable to use a porous membrane in terms of a method capable of obtaining a high proton permeation suppression effect without extreme increase in membrane resistance. The thickness of the high void substrate is generally selected from the range of 5 to 300 μm, and from the viewpoint of maintaining film resistance or strength, it is preferably 70 to 250 μm.

此種向高空隙基材填充聚合性組合物之方法並無特別限定。例如可例示於高空隙基材上塗佈或噴霧聚合性組合物,或將高空隙基材浸漬於聚合性組合物中之方法等。聚合性組合物為糊狀時,較佳為藉由塗佈來實施。利用塗佈之對高空隙基材之填充可藉由輥式塗佈機、平面塗佈機、刮刀塗佈機、缺角輪塗佈機、噴霧、浸漬等公知之裝置或方法而進行。The method of filling the polymerizable composition into the high-void substrate is not particularly limited. For example, a method of coating or spraying a polymerizable composition on a high-voided substrate, or immersing a high-voided substrate in a polymerizable composition, etc. can be exemplified. When the polymerizable composition is in a paste form, it is preferably applied by coating. The filling of the high-void substrate by coating can be performed by known devices or methods such as a roll coater, a flat coater, a knife coater, a gap wheel coater, spraying, and dipping.

如上所述,於高空隙基材塗佈聚合性組合物之後,將其加熱而進行聚合,獲得包含膜狀高分子體之陰離子交換基導入用原膜。為了獲得本發明中所使用之陰離子交換膜A,以此方式獲得陰離子交換基導入用原膜後,於進行導入陰離子交換基之操作之前,進行於該膜表面形成包含高交聯樹脂層之質子透過抑制層之操作。該形成操作例如可藉由使二烷基胺化合物或多胺化合物與上述陰離子交換基導入用原膜之一側之膜表面接觸而實施。As described above, after the polymerizable composition is applied to the high-void substrate, it is heated and polymerized to obtain the original membrane for introducing an anion exchange group containing a film-like polymer. In order to obtain the anion exchange membrane A used in the present invention, after obtaining the original membrane for the introduction of anion exchange groups in this way, before the operation of introducing anion exchange groups, protons containing a highly crosslinked resin layer are formed on the surface of the membrane. Through the operation of the suppression layer. This forming operation can be performed by, for example, bringing a dialkylamine compound or a polyamine compound into contact with the membrane surface on one side of the original membrane for introduction of the anion exchange group.

即,於僅於陰離子交換基導入用原膜之一側之面形成質子透過抑制層之情形時,將另一側之膜表面用膜等覆蓋,使未被膜覆蓋之一側之膜表面與二烷基胺化合物或多胺化合物接觸,從而於該膜表面形成交聯比內部高之高交聯樹脂層。That is, when the proton permeation suppression layer is formed only on one side of the original membrane for the introduction of anion exchange groups, the membrane surface on the other side is covered with a membrane or the like, so that the membrane surface on the side that is not covered by the membrane and the two The alkylamine compound or the polyamine compound contacts to form a highly crosslinked resin layer with a higher crosslinking ratio on the surface of the film than the inside.

二烷基胺化合物所具有之烷基胺基可與鹵代烷基反應,脫去氯化氫而形成四級銨基,由於該二烷基胺化合物為2官能,故與2個鹵代烷基反應而形成交聯結構。此種二烷基胺化合物之烷基較佳為甲基、乙基、丙基、丁基等碳數為1~4者。若表示二烷基胺化合物之具體例,則可使用二甲胺、二乙胺、二丙胺、二丁胺等。The alkylamine group of the dialkylamine compound can react with the halogenated alkyl group to remove hydrogen chloride to form a quaternary ammonium group. Since the dialkylamine compound is bifunctional, it reacts with two halogenated alkyl groups to form a crosslink structure. The alkyl group of such a dialkylamine compound is preferably one having 1 to 4 carbon atoms such as methyl, ethyl, propyl, and butyl. If it shows the specific example of a dialkylamine compound, dimethylamine, diethylamine, dipropylamine, dibutylamine, etc. can be used.

多胺化合物係可與鹵代烷基反應而形成四級銨基,且於一分子中具有2個以上三級胺基之化合物,可無限制地使用公知之任意多胺,較佳為使用二胺、三胺及四胺,尤佳為使用二胺。作為此種二胺,較佳為伸烷基之碳數為1~6之伸烷基二胺,具體可使用乙二胺、二伸乙基三胺、丙二胺、丁二胺、戊二胺、己二胺、四甲基乙二胺、四甲基己二胺等。Polyamine compounds are compounds that can react with halogenated alkyl groups to form quaternary ammonium groups and have two or more tertiary amine groups in one molecule. Any known polyamines can be used without limitation, preferably diamines, Triamines and tetraamines, and diamines are particularly preferred. As such diamines, alkylene diamines having 1 to 6 carbon atoms in the alkylene group are preferred. Specifically, ethylene diamine, diethylene triamine, propylene diamine, butane diamine, and pentane diamine can be used. Amine, hexamethylene diamine, tetramethyl ethylene diamine, tetramethyl hexamethylene diamine, etc.

於提高質子透過抑制之方面而言,交聯點間距離越短之結構,降低含水率之效果越好,就此而言,較佳為使用二烷基胺,其中較佳為儘量不降低陰離子之透過性,因此最佳為使用二甲胺。In terms of improving the inhibition of proton permeation, the shorter the distance between the cross-linking points, the better the effect of reducing the moisture content. In this regard, it is better to use dialkylamines, and it is better not to reduce the amount of anions as much as possible. Because of its permeability, it is best to use dimethylamine.

又,至於質子透過抑制層,存在於該層內之鹵代烷基中的與二烷基胺化合物或多胺化合物反應之比率越高,則越能形成高交聯之樹脂層,從而成為質子之透過抑制優異之層。又,若質子透過抑制層變厚,則質子之透過抑制提高,但若達到一定程度之厚度,則即使進一步增厚,質子透過抑制亦基本不會提高,僅膜電阻增加。因此,質子透過抑制層之較佳形態為採用使儘可能多的鹵代烷基與二烷基胺化合物或多胺化合物反應之高交聯結構,且形成為獲得較高質子透過抑制之最小厚度之層。作為質子透過抑制層之厚度,例如較佳為陰離子交換膜之1/2厚度之50%以下,更佳為25%以下。In addition, as for the proton permeation suppression layer, the higher the reaction ratio of the haloalkyl group existing in the layer with the dialkylamine compound or polyamine compound, the more highly cross-linked resin layer can be formed, thereby becoming the permeation of protons Suppress the excellent layer. In addition, if the proton permeation suppression layer becomes thicker, the proton permeation inhibition is improved, but if it reaches a certain thickness, even if the thickness is further increased, the proton permeation inhibition hardly increases, and only the membrane resistance increases. Therefore, the preferred form of the proton permeation suppression layer is to adopt a highly cross-linked structure in which as many halogenated alkyl groups as possible react with dialkylamine compounds or polyamine compounds, and form a layer with a minimum thickness for high proton permeation suppression. . As the thickness of the proton permeation suppression layer, for example, it is preferably 50% or less of 1/2 the thickness of the anion exchange membrane, and more preferably 25% or less.

於形成此種質子透過抑制層時,較佳為藉由使其接觸二烷基胺化合物或多胺化合物之水溶液而進行交聯反應。若使用有機溶劑,則與膜之親和良好,故向陰離子交換基導入用原膜之內部擴散迅速,於接觸面附近進行交聯之同時,於膜內部亦進行交聯。因此,不僅質子透過抑制層進行交聯,而且交聯亦進行至基體層之一部分,膜電阻增加至所需以上。When forming such a proton permeation suppressing layer, it is preferable to perform a crosslinking reaction by contacting an aqueous solution of a dialkylamine compound or a polyamine compound. If an organic solvent is used, the affinity with the membrane is good, so it diffuses quickly into the original membrane for the introduction of anion exchange groups, and at the same time cross-links near the contact surface, it also cross-links inside the membrane. Therefore, not only the protons are cross-linked through the suppression layer, but the cross-linking also progresses to a part of the base layer, and the membrane resistance is increased more than necessary.

另一方面,於水溶液之情形時,由於與膜之親和比有機溶劑差,故向內部擴散之速度變得非常慢。因此,交聯自接觸面附近非常緩慢地向內部進行,故而能夠容易地藉由將膜於特定時間從液體中取出而控制質子透過抑制層之厚度,從而亦可防止基體層進行交聯。進而,由於液體浸透之層之交聯反應時間保持得較長,故大量鹵代烷基發生交聯反應,從而可形成交聯更高之層。因此,最佳為藉由水溶液形成質子透過抑制層。On the other hand, in the case of an aqueous solution, since the affinity with the membrane is lower than that of the organic solvent, the diffusion rate into the interior becomes very slow. Therefore, the crosslinking proceeds very slowly to the inside from the vicinity of the contact surface, so that the thickness of the proton permeation suppression layer can be easily controlled by taking the film out of the liquid at a specific time, and the crosslinking of the base layer can also be prevented. Furthermore, since the cross-linking reaction time of the liquid-impregnated layer is kept longer, a large amount of halogenated alkyl groups undergo cross-linking reaction, so that a layer with higher cross-linking can be formed. Therefore, it is best to form the proton permeation suppression layer by an aqueous solution.

但是,於二烷基胺化合物或多胺化合物之分子量較高,於水溶液中向內部擴散之速度過慢之情形時,或者溶解性較差之情形時,為了調整擴散速度及改善溶解性,有效的是將一部分水替換為有機溶劑。於此情形時,可使用甲醇、乙醇、1-丙醇、2-丙醇、丙酮等親水性溶劑作為替換水之有機溶劑。其含量較佳為相對於水為30質量%以內,特別是5~15質量%。However, when the molecular weight of the dialkylamine compound or polyamine compound is high, the diffusion rate in the aqueous solution is too slow, or the solubility is poor, in order to adjust the diffusion rate and improve the solubility, it is effective It replaces part of the water with an organic solvent. In this case, hydrophilic solvents such as methanol, ethanol, 1-propanol, 2-propanol, acetone, etc. can be used as organic solvents to replace water. The content is preferably within 30% by mass relative to water, particularly 5 to 15% by mass.

於將二烷基胺化合物或多胺化合物溶解於水而進行交聯反應之情形時,濃度較佳為0.01 mol/L~2 mol/L,尤佳為0.03 mol/L~1 mol/L。於濃度過低之情形時,與鹵代烷基之交聯反應性降低,於濃度過高之情形時,向陰離子交換基導入用原膜之膜內部之擴散增強,容易產生對於基體層之交聯。In the case of dissolving the dialkylamine compound or polyamine compound in water to perform the crosslinking reaction, the concentration is preferably 0.01 mol/L to 2 mol/L, and particularly preferably 0.03 mol/L to 1 mol/L. When the concentration is too low, the crosslinking reactivity with halogenated alkyl groups is reduced. When the concentration is too high, the diffusion inside the original membrane for the introduction of anion exchange groups is enhanced, and crosslinking to the substrate layer is likely to occur.

再者,反應溫度係20~50℃之程度。使陰離子交換基導入用原膜與多胺反應後,亦可以除去未供至反應之過量之二烷基胺化合物或多胺化合物為目的而進行洗淨。Furthermore, the reaction temperature is about 20-50°C. After reacting the original membrane for anion exchange group introduction with the polyamine, it is also possible to perform washing for the purpose of removing the excess dialkylamine compound or polyamine compound that has not been supplied to the reaction.

藉由此種與二烷基胺化合物或多胺化合物之反應,於陰離子交換基導入用原膜之表面形成具有陰離子交換容量之交聯結構,因此可於該陰離子交換基導入用原膜進行該反應之後,測定陰離子交換容量,由此明瞭於膜表面形成之交聯之程度。By this reaction with dialkylamine compounds or polyamine compounds, a cross-linked structure with anion exchange capacity is formed on the surface of the original membrane for anion exchange group introduction. Therefore, the original membrane for anion exchange group introduction can be used for the After the reaction, the anion exchange capacity was measured, thereby clarifying the degree of crosslinking formed on the membrane surface.

如此地完成對陰離子交換基導入用原膜之膜表面形成高交聯樹脂層之操作後,繼而使三烷基胺與膜中剩餘之鹵代烷基接觸,將其轉化為四級銨基即可。該方法可以依據陰離子交換膜之製造中之導入四級銨基之常規方法。此時,於在製造陰離子交換基導入用原膜時使用之上述聚合性組合物中,除具有鹵代烷基之芳香族聚合性單體以外,併用具有可導入其他陰離子交換基之官能基的聚合性單體之情形時,可依照常規方法進行與該官能基對應之陰離子交換基之轉化。具體而言,對苯乙烯等之苯環進行氯甲基化,其後使三烷基胺與其接觸。又,於具有一級~三級胺之情形時,可藉由利用烷基化使其四級胺化等方法而導入所期望之陰離子交換基。After completing the operation of forming a highly cross-linked resin layer on the membrane surface of the original membrane for the introduction of anion exchange groups, then contact the trialkylamine with the remaining haloalkyl groups in the membrane to convert them into quaternary ammonium groups. This method can be based on the conventional method of introducing quaternary ammonium groups in the manufacture of anion exchange membranes. In this case, in the above-mentioned polymerizable composition used in the production of the original membrane for the introduction of anion exchange groups, in addition to the aromatic polymerizable monomer having a halogenated alkyl group, a polymerizable composition having a functional group capable of introducing other anion exchange groups is used. In the case of monomers, the conversion of the anion exchange group corresponding to the functional group can be carried out in accordance with conventional methods. Specifically, a benzene ring such as styrene is chloromethylated, and then trialkylamine is brought into contact with it. In addition, in the case of having primary to tertiary amines, the desired anion exchange group can be introduced by a method such as quaternary amination by alkylation.

藉由以上方法,可製造陰離子交換膜A,其於一側之膜表面形成有包含高交聯樹脂層之質子透過抑制層。為了藉由所獲得之陰離子交換膜A進行高效率的電解,其陰離子交換容量較佳為0.6~5.0 meq/g-乾燥膜,尤其是處於0.8~2.0 meq/g-乾燥膜之範圍內即可,厚度較佳為5~350 μm,尤其是處於70~280 μm之範圍內。即,為了具有此種物性,可適當地設定聚合性組合物之組成(單體成分或交聯劑之量或其種類)、高空隙基材之厚度及所導入之陰離子交換基量。By the above method, the anion exchange membrane A can be manufactured, and a proton permeation suppression layer including a highly crosslinked resin layer is formed on the surface of the membrane on one side. In order to perform high-efficiency electrolysis with the obtained anion exchange membrane A, the anion exchange capacity is preferably 0.6-5.0 meq/g-dry membrane, especially within the range of 0.8-2.0 meq/g-dry membrane. The thickness is preferably 5 to 350 μm, especially in the range of 70 to 280 μm. That is, in order to have such physical properties, the composition of the polymerizable composition (the amount or type of monomer components or crosslinking agent), the thickness of the high void substrate, and the amount of anion exchange groups to be introduced can be appropriately set.

進而,於以此方式所獲得之陰離子交換膜A中,該質子透過抑制層之陰離子交換容量通常為0.005~0.5 meq/g-乾燥膜,更佳為0.01~0.2 meq/g-乾燥膜。此處,作為於求出上述質子透過抑制層之陰離子交換容量時之重量基準的乾燥膜為陰離子交換膜A整體之重量。若陰離子交換容量低於該範圍,則無法充分獲得質子之透過抑制,若超過該範圍,則成為高電阻,因此耗電率變高。Furthermore, in the anion exchange membrane A obtained in this way, the anion exchange capacity of the proton permeation suppression layer is usually 0.005-0.5 meq/g-dry membrane, more preferably 0.01-0.2 meq/g-dry membrane. Here, the dry membrane used as a weight basis when determining the anion exchange capacity of the proton permeation suppression layer is the weight of the anion exchange membrane A as a whole. If the anion exchange capacity is less than this range, the permeation inhibition of protons cannot be sufficiently obtained, and if it exceeds this range, the resistance becomes high, and therefore the power consumption rate becomes high.

進而,質子之透過抑制層之上述陰離子交換容量係相對於陰離子交換膜A整體之陰離子交換容量而言較佳為0.002~0.3倍,尤其是處於0.005~0.25倍之範圍內。該質子之透過抑制層之陰離子交換容量之比率若低於上述範圍,則仍舊無法充分獲得質子之透過抑制。又,若超過該範圍,則交聯層變得過厚,仍舊成為高電阻,從而使耗電率變高。Furthermore, the anion exchange capacity of the proton permeation suppression layer is preferably 0.002 to 0.3 times the anion exchange capacity of the anion exchange membrane A as a whole, especially in the range of 0.005 to 0.25 times. If the ratio of the anion exchange capacity of the proton permeation suppression layer is lower than the above range, the proton permeation suppression still cannot be sufficiently obtained. Moreover, if it exceeds this range, the crosslinked layer will become too thick, it will become high resistance, and power consumption will become high.

形成於該膜表面之質子透過抑制層之陰離子交換容量,可於上述陰離子交換基導入用原膜之表面形成高交聯樹脂層之階段,藉由測定其陰離子交換容量而求出。再者,於供給至陰離子交換膜之製造的上述聚合性組合物中,除具有鹵代烷基之芳香族聚合性單體以外,併用具有可導入其他陰離子交換基之官能基之聚合性單體之情形時,可根據其組成比,計算相對於將該鹵代烷基轉化而導入之四級銨基量的其他離子交換基之導入量,基於該導入量,修正於形成上述高交聯樹脂層之階段中的陰離子交換基導入用原膜之陰離子交換容量之測定值,求出最終之質子透過抑制層之陰離子交換容量。又,於併用具有其他陰離子交換基之聚合性單體之情形時,可測定於形成上述高交聯樹脂層之階段中的陰離子交換基導入用原膜之陰離子交換容量之測定值之前,於該高交聯樹脂層形成前之階段中,亦測定原膜之陰離子交換容量,求出前者之測定值減去該測定值之值,從而求出質子透過抑制層之陰離子交換容量。即,可使用其他離子交換基之導入量,修正最終質子透過抑制層之陰離子交換容量而求出,上述其他離子交換基之導入量係根據該值,根據供給至上述製造之聚合性組合物而計算的,相對於將上述鹵代烷基轉化而導入之四級銨基量的其他離子交換基之導入量。The anion exchange capacity of the proton permeation suppression layer formed on the surface of the membrane can be determined by measuring the anion exchange capacity at the stage where the highly crosslinked resin layer is formed on the surface of the original membrane for introduction of anion exchange groups. Furthermore, in the above-mentioned polymerizable composition supplied to the manufacture of the anion exchange membrane, in addition to the aromatic polymerizable monomer having a halogenated alkyl group, a polymerizable monomer having a functional group capable of introducing other anion exchange groups is used together In the case, the introduction amount of other ion exchange groups relative to the amount of the quaternary ammonium group introduced by converting the haloalkyl group can be calculated based on the composition ratio, and based on the introduction amount, correction in the stage of forming the above-mentioned highly cross-linked resin layer The measured value of the anion exchange capacity of the original membrane used for the introduction of the anion exchange group to obtain the final anion exchange capacity of the proton permeation suppression layer. In addition, when polymerizable monomers with other anion exchange groups are used in combination, the measurement of the anion exchange capacity of the original membrane for the introduction of anion exchange groups in the step of forming the above-mentioned highly crosslinked resin layer can be measured before the In the stage before the formation of the highly cross-linked resin layer, the anion exchange capacity of the original membrane is also measured, and the measured value of the former is obtained by subtracting the measured value to obtain the anion exchange capacity of the proton permeation suppression layer. That is, the introduction amount of other ion exchange groups can be used to correct the final anion exchange capacity of the proton permeation suppression layer. The introduction amount of the other ion exchange groups is based on this value and based on the polymerizable composition supplied to the production Calculated, the introduction amount of other ion exchange groups relative to the amount of quaternary ammonium groups introduced by conversion of the above-mentioned halogenated alkyl group.

於本發明中,上述陰離子交換膜A不僅可將包含上述高交聯樹脂層之質子透過抑制層形成於朝向電解裝置之陰極側之一側之面,亦可形成於與其相反之朝向陽極側之一側之面。即,將該態樣之具體例示於圖3。In the present invention, the above-mentioned anion exchange membrane A can not only form the proton permeation suppression layer including the above-mentioned highly crosslinked resin layer on the side facing the cathode side of the electrolytic device, but also on the opposite side facing the anode side. One side of the face. That is, a specific example of this aspect is shown in FIG. 3.

如圖3所示之態樣,陰離子交換膜A朝向陽極側之面之耐氧化性提高,即使與陽極液中所含之次鹵酸接觸,亦難以氧化劣化。藉此使膜整體之耐久性提高,進而作為本發明之特徵的朝向陰極側之一側的質子透過抑制層之效果持續性亦較大程度地提高,更協同地改善了氫氧化四級銨之穩定製造而尤佳。As shown in FIG. 3, the oxidation resistance of the anion exchange membrane A facing the anode side is improved, and even if it comes into contact with hypohalous acid contained in the anolyte, it is difficult to oxidize and deteriorate. As a result, the durability of the entire membrane is improved, and the continuity of the effect of the proton permeation suppression layer toward the cathode side, which is the feature of the present invention, is also greatly improved, and the quaternary ammonium hydroxide is more synergistically improved. Stable manufacturing is preferred.

以下,藉由實施例對本發明進行更詳細之說明,但本發明並不限定於該等實施例。再者,於以下之實施例及比較例中,陰離子交換膜之陰離子交換容量、及於膜表面形成有高交聯樹脂層之陰離子交換基導入用原膜之陰離子交換容量之各測定係藉由以下之方法而測定。 (陰離子交換容量之測定方法) 將陰離子交換膜(或形成有上述高交聯樹脂層之陰離子交換基導入用原膜)切成2×2 cm,浸漬於1 mol/L之鹽酸水溶液中,將抗衡離子設為Cl- 。用超純水將Cl- 型之陰離子交換膜充分洗淨後,浸漬於1 mol/L之硝酸鈉水溶液中,使Cl- 釋出至液體中。將陰離子交換膜從1 mol/L之硝酸鈉水溶液中取出,藉由電位差滴定裝置,用0.1 mol/L之硝酸銀水溶液進行滴定,根據下述式: Cl- +Ag+ →AgCl 求出不生成氯化銀之滴定量。另一方面,將浸漬於1 mol/L之硝酸鈉水溶液後之陰離子交換膜再次浸漬於1 mol/L之鹽酸水溶液中,將抗衡離子設為Cl- ,用超純水充分洗淨後,藉由真空乾燥機使膜充分乾燥。測定乾燥後陰離子交換膜之重量。Hereinafter, the present invention will be described in more detail through examples, but the present invention is not limited to these examples. Furthermore, in the following examples and comparative examples, the anion exchange capacity of the anion exchange membrane and the anion exchange capacity of the original membrane for the introduction of an anion exchange group with a highly crosslinked resin layer formed on the membrane surface are measured by Measured by the following method. (Measurement method of anion exchange capacity) Cut the anion exchange membrane (or the original membrane for the introduction of the anion exchange group with the above-mentioned highly crosslinked resin layer) into 2×2 cm, immerse it in a 1 mol/L hydrochloric acid aqueous solution, and set counter ion Cl -. After fully washing the Cl- type anion exchange membrane with ultrapure water, immerse it in a 1 mol/L sodium nitrate aqueous solution to release Cl- into the liquid. The anion exchange membrane was removed from the 1 mol / L aqueous solution of sodium nitrate, the by potentiometric titration apparatus was titrated with 0.1 mol / L of aqueous solution of silver nitrate according to the following formula: Cl - chloro not generated + Ag + → AgCl obtained The titration of silver. On the other hand, the anion immersed in 1 mol / L aqueous solution of sodium nitrate exchange membrane was immersed again in 1 mol / L of aqueous hydrochloric acid, the counterion to Cl -, after sufficiently washed with ultrapure water, by The film is fully dried by a vacuum dryer. Measure the weight of the anion exchange membrane after drying.

利用所求出之結果,根據下述式: 陰離子交換容量(meq/g-乾燥膜)=滴定量(mL)×0.1(mol/L)/乾燥膜重量(g-乾燥膜) 求出陰離子交換容量。Using the obtained result, according to the following formula: Anion exchange capacity (meq/g-dry membrane) = titration (mL)×0.1 (mol/L)/dry membrane weight (g-dry membrane) Determine the anion exchange capacity.

<實施例1> 相對於包括氯甲基苯乙烯35重量份、苯乙烯40重量份及二乙烯苯10重量份之聚合性組合物100質量份,添加作為自由基聚合起始劑之二第三丁基過氧化物5重量份及作為基質樹脂之苯乙烯-丁二烯共聚物10重量份,獲得糊狀聚合性組合物。<Example 1> To 100 parts by weight of a polymerizable composition including 35 parts by weight of chloromethylstyrene, 40 parts by weight of styrene, and 10 parts by weight of divinylbenzene, di-tertiary butyl peroxide is added as a radical polymerization initiator 5 parts by weight and 10 parts by weight of a styrene-butadiene copolymer as a matrix resin to obtain a paste-like polymerizable composition.

其次,將上述聚合性組合物塗佈於高密度聚乙烯製織布(商品名:NIPPU強力網200目,線徑為86 μm,每1英吋目數為156(縱)/100(橫)根,NBC工業製造),將其兩面以包含聚酯膜之剝離膜被覆後,藉由漿料法進行聚合。聚合方式為以2小時自20℃升溫至100℃,然後以30分鐘升溫至120℃,保持120℃ 6小時,獲得陰離子交換基導入用原膜。Next, the above polymerizable composition was coated on a high-density polyethylene woven fabric (trade name: NIPPU strong net 200 mesh, wire diameter 86 μm, mesh number per inch is 156 (longitudinal)/100 (horizontal) Root, manufactured by NBC Industries), both sides are covered with a release film containing polyester film, and then polymerized by the slurry method. The polymerization method was to raise the temperature from 20°C to 100°C in 2 hours, then to 120°C in 30 minutes, and maintain at 120°C for 6 hours to obtain the original membrane for the introduction of anion exchange groups.

其次,自陰離子交換基導入用原膜剝除剝離膜,此時,該原膜兩面之剝離膜並未完全剝去,於單面仍附著有剝離膜。將該僅單側被剝離膜覆蓋之陰離子交換基導入用原膜以30℃於0.05N-二甲胺水溶液中浸漬8小時,於另一表面形成質子透過抑制層(高交聯樹脂層)。於該階段,測定陰離子交換膜之陰離子交換容量,結果為0.03 meq/g-乾燥膜。於進行後述之將氯甲基轉化為四級銨基之處理之前,該膜係上述陰離子交換容量,因此可確認該膜中之高交聯樹脂層之陰離子交換容量為上述值。Next, peel off the peeling film from the original film for the introduction of anion exchange groups. At this time, the peeling film on both sides of the original film is not completely peeled off, and the peeling film is still attached to one side. The original film for introducing anion exchange groups covered with a release film on one side was immersed in a 0.05N-dimethylamine aqueous solution at 30°C for 8 hours to form a proton permeation suppression layer (highly crosslinked resin layer) on the other surface. At this stage, the anion exchange capacity of the anion exchange membrane was measured, and the result was 0.03 meq/g-dry membrane. Before the treatment of converting a chloromethyl group into a quaternary ammonium group described later, the membrane has the above-mentioned anion exchange capacity, so it can be confirmed that the anion exchange capacity of the highly crosslinked resin layer in the membrane is the above-mentioned value.

其次,除去覆蓋單面之聚酯膜。使用包含三甲胺10質量%及丙酮20質量%之水溶液,以30℃對其進行16小時之四級化反應,將膜中剩餘之氯甲基轉化為四級銨基。測定所獲得之陰離子交換膜之陰離子交換容量,結果為1.37 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.02倍之比率。陰離子交換膜之厚度為190 μm。Secondly, remove the polyester film covering one side. Using an aqueous solution containing 10% by mass of trimethylamine and 20% by mass of acetone, it was subjected to a quaternization reaction at 30°C for 16 hours to convert the remaining chloromethyl groups in the film into quaternary ammonium groups. The anion exchange capacity of the obtained anion exchange membrane was measured, and the result was 1.37 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity of the above-mentioned highly crosslinked resin layer was 0.02 times the ratio of the anion exchange capacity of the entire anion exchange membrane. The thickness of the anion exchange membrane is 190 μm.

其次,將所獲得之陰離子交換膜及作為陽離子交換膜之杜邦公司製造之Nafion N324,組裝至以圖1之方式配置之有效膜面積為1 dm2 之電解裝置中。將陰離子交換膜以形成有高交聯樹脂層之面朝向陰極側之方式進行配置。再者,陽極使用鍍有鉑之鈦板,陰極使用SUS316。Next, the obtained anion exchange membrane and Nafion N324 manufactured by DuPont as a cation exchange membrane were assembled into an electrolysis device with an effective membrane area of 1 dm 2 arranged in the manner shown in FIG. 1. The anion exchange membrane is arranged so that the surface on which the highly crosslinked resin layer is formed faces the cathode side. Furthermore, the anode uses platinum plated titanium plate, and the cathode uses SUS316.

使0.5當量之硫酸於上述電解裝置之陽極室循環,使2.5當量之氯化四甲基銨水溶液於陰離子交換膜與陰極側之陽離子交換膜之間循環,使氫氧化四級銨水溶液於陰極室循環,一面將電流密度維持為30 A/dm2 ,將溫度維持為40℃,一面連續地實施電解。於連續運轉中,使陰極室之氫氧化四甲基銨濃度成為2.0當量。於濃度變高時添加純水,變低時添加該成分,使於相同之各室循環之液體之濃度變固定。Circulate 0.5 equivalent of sulfuric acid in the anode chamber of the above electrolysis device, and circulate 2.5 equivalent of tetramethylammonium chloride aqueous solution between the anion exchange membrane and the cation exchange membrane on the cathode side, and make the quaternary ammonium hydroxide aqueous solution in the cathode chamber In the cycle, electrolysis was continuously performed while maintaining the current density at 30 A/dm 2 and the temperature at 40°C. During continuous operation, the concentration of tetramethylammonium hydroxide in the cathode compartment was made 2.0 equivalents. Add pure water when the concentration becomes high, and add this component when it becomes low, so that the concentration of the liquid circulating in the same chamber becomes fixed.

進行3個月之連續運轉,對初始(第一天)之電壓值、及陰離子交換膜之初始、1個月後、2個月後、3個月後之電流效率進行評價。結果如表1所示。Perform continuous operation for 3 months to evaluate the initial (first day) voltage value and the current efficiency of the anion exchange membrane at the beginning, after 1 month, 2 months, and 3 months. The results are shown in Table 1.

<實施例2> 於實施例1中,將陰離子交換基導入用原膜於0.05N-二甲胺水溶液中浸漬3小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 2> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-dimethylamine aqueous solution for 3 hours, except that it was carried out in the same manner as in Example 1. The membrane produced on one side was formed with proton permeation The anion exchange membrane of the suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.01 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.39 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.007倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.01 meq/g-dry membrane. In addition, the anion exchange capacity of the anion exchange membrane as a whole is 1.39 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity of the highly crosslinked resin layer was 0.007 times the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例3> 於實施例1中,將陰離子交換基導入用原膜於0.05N-二甲胺水溶液中浸漬40小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 3> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-dimethylamine aqueous solution for 40 hours, except that it was carried out in the same manner as in Example 1. The surface of the membrane produced on one side was formed with protons permeating The anion exchange membrane of the suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.20 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.2 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.17倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.20 meq/g-dry membrane. In addition, the anion exchange capacity of the anion exchange membrane as a whole is 1.2 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity of the highly crosslinked resin layer was 0.17 times the ratio of the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例4> 於實施例1中,將陰離子交換基導入用原膜於將其兩面之剝離膜剝除之狀態下,浸漬於0.05N-二甲胺水溶液中,除此以外,與實施例1同樣地進行,製造於該膜之兩面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 4> In Example 1, the original membrane for introducing anion exchange groups was immersed in a 0.05N-dimethylamine aqueous solution in a state where the peeling films on both sides were peeled off, and it was carried out in the same manner as in Example 1, except that the original membrane was immersed in a 0.05N-dimethylamine aqueous solution. An anion exchange membrane with proton permeation suppression layers (highly cross-linked resin layers) formed on both sides of the membrane.

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為每單面0.03 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.34 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層每單面之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.02倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.03 meq/g per single side-dry membrane. In addition, the anion exchange capacity of the anion exchange membrane as a whole is 1.34 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity per one side of the highly crosslinked resin layer was 0.02 times the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例5> 於實施例1中,將陰離子交換基導入用原膜於0.05N-二甲胺水溶液中浸漬2小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 5> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-dimethylamine aqueous solution for 2 hours, except that it was carried out in the same manner as in Example 1. The membrane surface produced on one side was formed with protons permeating The anion exchange membrane of the suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.006 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.394 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.004倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.006 meq/g-dry membrane. In addition, the anion exchange capacity of the anion exchange membrane as a whole is 1.394 meq/g-dry membrane. From this result, it can be confirmed that the anion exchange capacity of the highly crosslinked resin layer is 0.004 times the ratio of the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例6> 於實施例1中,將陰離子交換基導入用原膜於0.05N-二甲胺水溶液中浸漬60小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 6> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-dimethylamine aqueous solution for 60 hours, except that it was carried out in the same manner as in Example 1. The membrane produced on one side was formed with proton permeation The anion exchange membrane of the suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.3 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.1 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.27倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.3 meq/g-dry membrane. In addition, the anion exchange capacity of the entire anion exchange membrane is 1.1 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity of the highly crosslinked resin layer was 0.27 times the ratio of the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例7> 於實施例1中,將陰離子交換基導入用原膜於0.05N-二乙胺水溶液中浸漬10小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 7> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-diethylamine aqueous solution for 10 hours, except that it was carried out in the same manner as in Example 1. The membrane surface produced on one side was formed with protons permeating The anion exchange membrane of the suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.03 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.37 meq/g-乾燥膜,與實施例1相同。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.02倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.03 meq/g-dry membrane. In addition, the anion exchange capacity of the entire anion exchange membrane was 1.37 meq/g-dry membrane, which was the same as in Example 1. From this result, it was confirmed that the anion exchange capacity of the above-mentioned highly crosslinked resin layer was 0.02 times the ratio of the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例8> 於實施例1中,將陰離子交換基導入用原膜於0.05N-四甲基乙二胺水溶液中浸漬15小時,除此以外,與實施例1同樣地進行,製造於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Example 8> In Example 1, the original membrane for the introduction of anion exchange groups was immersed in a 0.05N-tetramethylethylenediamine aqueous solution for 15 hours, except that it was carried out in the same manner as in Example 1, and the membrane surface was formed on one side. Anion exchange membrane with proton permeation suppression layer (highly cross-linked resin layer).

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.06 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.4 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.04倍之比率。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.06 meq/g-dry membrane. In addition, the anion exchange capacity of the entire anion exchange membrane is 1.4 meq/g-dry membrane. From this result, it can be confirmed that the anion exchange capacity of the highly crosslinked resin layer is 0.04 times the ratio of the anion exchange capacity of the entire anion exchange membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<實施例9> 相對於包含氯甲基苯乙烯35重量份、苯乙烯40重量份、二乙烯苯10重量份之聚合性組合物100質量份,添加作為自由基聚合起始劑之二第三丁基過氧化物5重量份,獲得糊狀聚合性組合物。<Example 9> To 100 parts by weight of a polymerizable composition containing 35 parts by weight of chloromethylstyrene, 40 parts by weight of styrene, and 10 parts by weight of divinylbenzene, di-tertiary butyl peroxide is added as a radical polymerization initiator 5 parts by weight to obtain a paste-like polymerizable composition.

其次,將上述聚合性組合物塗佈於聚乙烯製雙軸延伸多孔性膜(厚度為135 μm,空隙率為49%,平均細孔徑為0.13 μm),將其兩面以包含聚酯膜之剝離膜被覆後,藉由漿料法進行聚合。聚合方式為以2小時自20℃升溫至100℃,其次以30分鐘升溫至120℃,保持120℃ 6小時,獲得陰離子交換基導入用原膜。Next, the above-mentioned polymerizable composition was applied to a polyethylene biaxially stretched porous film (thickness 135 μm, porosity 49%, average pore diameter 0.13 μm), and the two sides of the polyethylene film were peeled off. After the film is coated, polymerization is carried out by the slurry method. The polymerization method was to raise the temperature from 20°C to 100°C in 2 hours, then to 120°C in 30 minutes, and maintain at 120°C for 6 hours to obtain the original membrane for the introduction of anion exchange groups.

其次,自陰離子交換基導入用原膜剝除剝離膜,此時,該原膜兩面之剝離膜並未完全剝去,於單面仍附著有剝離膜。將該僅單側被剝離膜覆蓋之陰離子交換基導入用原膜以30℃於0.05N-二甲胺水溶液中浸漬12小時,於另一表面形成質子透過抑制層(高交聯樹脂層)。Next, peel off the peeling film from the original film for the introduction of anion exchange groups. At this time, the peeling film on both sides of the original film is not completely peeled off, and the peeling film is still attached to one side. The original film for introducing anion exchange groups covered with a release film on one side was immersed in a 0.05N-dimethylamine aqueous solution at 30°C for 12 hours to form a proton permeation suppression layer (highly crosslinked resin layer) on the other surface.

其次,除去覆蓋單面之聚酯膜。使用包含三甲胺10質量%及丙酮20質量%之水溶液,以30℃對其進行16小時之四級化反應,獲得陰離子交換膜。Secondly, remove the polyester film covering one side. Using an aqueous solution containing 10% by mass of trimethylamine and 20% by mass of acetone, it was subjected to a quaternization reaction at 30°C for 16 hours to obtain an anion exchange membrane.

於該陰離子交換膜中,高交聯樹脂層之陰離子交換容量為0.03 meq/g-乾燥膜。又,陰離子交換膜整體之陰離子交換容量為1.67 meq/g-乾燥膜。根據該結果,可確認上述高交聯樹脂層之陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量成為0.018倍之比率。陰離子交換膜之厚度為160 μm。In this anion exchange membrane, the anion exchange capacity of the highly crosslinked resin layer is 0.03 meq/g-dry membrane. In addition, the anion exchange capacity of the anion exchange membrane as a whole is 1.67 meq/g-dry membrane. From this result, it was confirmed that the anion exchange capacity of the highly crosslinked resin layer was 0.018 times the ratio of the anion exchange capacity of the entire anion exchange membrane. The thickness of the anion exchange membrane is 160 μm.

使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。Using this anion exchange membrane, production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1.

<比較例1> 於實施例1中,未將陰離子交換基導入用原膜浸漬於0.05N-二甲胺水溶液中,除此以外,與實施例1同樣地進行,製造於任一膜表面均未形成質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Comparative example 1> In Example 1, the original membrane for introducing anion exchange groups was not immersed in a 0.05N-dimethylamine aqueous solution, except that it was carried out in the same manner as in Example 1, and no proton permeation suppression was formed on the surface of any membrane. Layer (highly cross-linked resin layer) anion exchange membrane.

該陰離子交換膜整體之陰離子交換容量為1.4 meq/g-乾燥膜。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。再者,由於到達3個月之前電流效率下降過多,無法保持液體之平衡,故停止電解。The anion exchange capacity of the anion exchange membrane as a whole is 1.4 meq/g-dry membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1. In addition, the current efficiency dropped too much before reaching 3 months and the liquid balance could not be maintained, so the electrolysis was stopped.

<比較例2> 於實施例1中,對於圖1之電解裝置,將所獲得之於一側之膜表面形成有質子透過抑制層(高交聯樹脂層)之陰離子交換膜,以形成有該高交聯樹脂層之面朝向陽極側之方式進行配置,除此以外,與實施例1同樣地實施氫氧化四甲基銨之製造。於該製造中,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。<Comparative example 2> In Example 1, for the electrolytic device of FIG. 1, the obtained anion exchange membrane with a proton permeation suppression layer (highly crosslinked resin layer) formed on one side of the membrane surface was formed with the highly crosslinked resin layer Except for disposing the surface facing the anode side, the same procedure as in Example 1 was carried out to manufacture tetramethylammonium hydroxide. In this production, the voltage value and the current efficiency of the anion exchange membrane were measured, and the results are shown in Table 1.

<比較例3> 於實施例9中,未將陰離子交換基導入用原膜浸漬於0.05N-二甲胺水溶液中,除此以外,與實施例9同樣地進行,製造於任一膜表面均未形成質子透過抑制層(高交聯樹脂層)之陰離子交換膜。<Comparative Example 3> In Example 9, the original membrane for introducing anion exchange groups was not immersed in a 0.05N-dimethylamine aqueous solution, except that it was carried out in the same manner as in Example 9, and no proton permeation suppression was formed on the surface of any membrane. Layer (highly cross-linked resin layer) anion exchange membrane.

該陰離子交換膜整體之陰離子交換容量為1.7 meq/g-乾燥膜。進而,使用該陰離子交換膜,與實施例1同樣地實施氫氧化四甲基銨之製造,測定電壓值及陰離子交換膜之電流效率,將其結果示於表1中。再者,由於到達3個月之前電流效率下降過多,無法保持液體之平衡,故停止電解。The anion exchange capacity of the anion exchange membrane as a whole is 1.7 meq/g-dry membrane. Furthermore, using this anion exchange membrane, the production of tetramethylammonium hydroxide was carried out in the same manner as in Example 1, and the voltage value and the current efficiency of the anion exchange membrane were measured. The results are shown in Table 1. In addition, the current efficiency dropped too much before reaching 3 months and the liquid balance could not be maintained, so the electrolysis was stopped.

[表1]    陰離子交換膜之高空隙基材 質子透過抑制層之配置 用於形成質子透過抑制層之胺化合物 處理時間 質子透過抑制層之陰離子交換容量 質子透過抑制層相對於膜整體之陰離子交換容量之比率 電流效率 電壓 小時 meq/g-乾燥膜 % V 初始 1個月後 2個月後 3個月後 初始 實施例1 織布 陰極側 二甲胺 8 0.03 0.02 85 84 83 79 11 實施例2 3 0.01 0.007 83 82 81 77 10 實施例3 40 0.2 0.17 89 88 87 83 17 實施例4 兩面 8 0.03(每單面) 0.02(每單面) 86 86 85 84 12 實施例5 陰極側 2 0.006 0.004 82 81 79 75 10 實施例6 60 0.3 0.27 90 89 88 85 22 實施例7 二乙胺 10 0.03 0.02 85 84 83 80 14 實施例8 四甲基己二胺 15 0.06 0.04 84 82 81 76 12 實施例9 多孔性膜 二甲胺 12 0.03 0.018 87 86 85 81 9 比較例1 織布 - - - - 81 77 70 - 9 比較例2 陽極側 二甲胺 8 0.03 0.02 85 83 78 72 10 比較例3 多孔性膜 - - - - 80 77 71 - 7 [Table 1] High void substrate for anion exchange membrane Configuration of proton penetration suppression layer Amine compound for forming proton permeation suppression layer Processing time Anion exchange capacity of proton permeation suppression layer The ratio of the proton permeation suppression layer to the anion exchange capacity of the whole membrane Current efficiency Voltage hour meq/g-dry film Times % V initial 1 month later 2 months later 3 months later initial Example 1 Weaving Cathode side Dimethylamine 8 0.03 0.02 85 84 83 79 11 Example 2 3 0.01 0.007 83 82 81 77 10 Example 3 40 0.2 0.17 89 88 87 83 17 Example 4 Two sides 8 0.03 (per side) 0.02 (per side) 86 86 85 84 12 Example 5 Cathode side 2 0.006 0.004 82 81 79 75 10 Example 6 60 0.3 0.27 90 89 88 85 twenty two Example 7 Diethylamine 10 0.03 0.02 85 84 83 80 14 Example 8 Tetramethylhexamethylenediamine 15 0.06 0.04 84 82 81 76 12 Example 9 Porous membrane Dimethylamine 12 0.03 0.018 87 86 85 81 9 Comparative example 1 Weaving no - - - - 81 77 70 - 9 Comparative example 2 Anode side Dimethylamine 8 0.03 0.02 85 83 78 72 10 Comparative example 3 Porous membrane no - - - - 80 77 71 - 7

1:陽極 2:陰極 3:電源 4:陽極室 5:原料室 6:陰極室 7:酸室 9:質子透過抑制層 10:基體層 A:陰離子交換膜 C1:陽離子交換膜 C2:陽離子交換膜1: anode 2: cathode 3: power supply 4: anode chamber 5: Raw material room 6: Cathode chamber 7: Acid Room 9: Protons pass through the inhibitory layer 10: base layer A: Anion exchange membrane C1: Cation exchange membrane C2: Cation exchange membrane

圖1係表示本發明之氫氧化四級銨之製造方法之原理之電解的概略說明圖。 圖2係表示本發明之氫氧化四級銨之製造方法之原理之其他態樣之電解的概略說明圖。 圖3係表示本發明之氫氧化四級銨之製造方法之原理之進而其他態樣之電解之概略說明圖。Fig. 1 is a schematic explanatory diagram showing the principle of electrolysis of the production method of quaternary ammonium hydroxide according to the present invention. Fig. 2 is a schematic explanatory diagram showing another aspect of electrolysis of the principle of the method for producing quaternary ammonium hydroxide of the present invention. Fig. 3 is a schematic explanatory diagram showing the principle of the method for producing quaternary ammonium hydroxide of the present invention and other aspects of electrolysis.

Claims (7)

一種氫氧化四級銨之製造方法,其係於電極間配置陰離子交換膜及陽離子交換膜而構成之電解槽中,向由陰離子交換膜與陽離子交換膜分隔之室供給鹵化四級銨之水溶液而進行電解,藉此製造氫氧化四級銨之方法; 該製造方法之特徵在於:將於其一側之膜表面形成有質子透過抑制層之膜,以形成有該質子透過抑制層之面朝向陰極側之方式進行配置,以此態樣使用該膜作為上述陰離子交換膜而進行電解。A method for producing quaternary ammonium hydroxide, in which an anion exchange membrane and a cation exchange membrane are arranged between the electrodes in an electrolytic cell, and an aqueous solution of quaternary ammonium halide is supplied to a compartment separated by the anion exchange membrane and the cation exchange membrane. A method of electrolysis to produce quaternary ammonium hydroxide; The manufacturing method is characterized in that: a membrane with a proton permeation suppression layer formed on the surface of the membrane on one side is arranged so that the surface on which the proton permeation suppression layer is formed faces the cathode side, and the film is used as The above-mentioned anion exchange membrane performs electrolysis. 如請求項1之氫氧化四級銨之製造方法,其中質子透過抑制層具有0.005~0.5 meq/g-乾燥膜之陰離子交換容量,且該陰離子交換容量相對於陰離子交換膜整體之陰離子交換容量之比率為0.002~0.3倍。The method for producing quaternary ammonium hydroxide according to claim 1, wherein the proton permeation suppression layer has an anion exchange capacity of 0.005 to 0.5 meq/g-dry membrane, and the anion exchange capacity is relative to the anion exchange capacity of the whole anion exchange membrane The ratio is 0.002 to 0.3 times. 如請求項1或2之氫氧化四級銨之製造方法,其中質子透過抑制層係以高交聯樹脂層形成。The method for producing quaternary ammonium hydroxide according to claim 1 or 2, wherein the proton permeation suppression layer is formed of a highly cross-linked resin layer. 如請求項1至3中任一項之氫氧化四級銨之製造方法,其中於朝向陰極側之另一側之膜表面亦設置有質子透過抑制層。The method for producing quaternary ammonium hydroxide according to any one of claims 1 to 3, wherein a proton permeation suppression layer is also provided on the surface of the membrane on the other side facing the cathode side. 如請求項1至4中任一項之氫氧化四級銨之製造方法,其中陰離子交換膜係如下地製造:對於使包含具有鹵代烷基之芳香族聚合性單體與交聯性聚合性單體之聚合性組合物聚合而獲得的陰離子交換基導入用原膜,使二烷基胺化合物或多胺化合物與其一側之膜表面接觸,於該膜表面形成交聯比內部高之高交聯樹脂層,其後使三烷基胺與膜中剩餘之鹵代烷基接觸,使其轉化為四級銨基。The method for producing quaternary ammonium hydroxide according to any one of claims 1 to 4, wherein the anion exchange membrane is produced as follows: for making an aromatic polymerizable monomer having a halogenated alkyl group and a crosslinkable polymerizable monomer The original membrane for the introduction of anion exchange groups obtained by the polymerization of the polymerizable composition, the dialkylamine compound or polyamine compound is brought into contact with the membrane surface on one side, and a highly crosslinked resin with a higher crosslinking ratio than the inside is formed on the membrane surface After that, the trialkylamine is contacted with the remaining haloalkyl group in the film to convert it into a quaternary ammonium group. 一種氫氧化四級銨製造裝置,其係於電極間配置陰離子交換膜及陽離子交換膜,向由上述陰離子交換膜與陽離子交換膜分隔之室供給鹵化四級銨之水溶液而進行電解,藉此製造氫氧化四級銨之裝置; 該製造裝置之特徵在於:上述陰離子交換膜於陰極側表面具備質子透過抑制層。A device for producing quaternary ammonium hydroxide, which disposes an anion exchange membrane and a cation exchange membrane between the electrodes, and supplies an aqueous solution of quaternary ammonium halide to a chamber separated by the anion exchange membrane and the cation exchange membrane for electrolysis, thereby manufacturing Equipment for quaternary ammonium hydroxide; The manufacturing device is characterized in that the anion exchange membrane is provided with a proton permeation suppression layer on the cathode side surface. 如請求項6之氫氧化四級銨製造裝置,其中陰離子交換膜於陽極側表面亦具備質子透過抑制層。Such as the quaternary ammonium hydroxide manufacturing device of claim 6, wherein the anion exchange membrane also has a proton permeation suppression layer on the anode side surface.
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