TW202111072A - Silicone composition for die bonding, cured product thereof and optical semiconductor device - Google Patents

Silicone composition for die bonding, cured product thereof and optical semiconductor device Download PDF

Info

Publication number
TW202111072A
TW202111072A TW109116655A TW109116655A TW202111072A TW 202111072 A TW202111072 A TW 202111072A TW 109116655 A TW109116655 A TW 109116655A TW 109116655 A TW109116655 A TW 109116655A TW 202111072 A TW202111072 A TW 202111072A
Authority
TW
Taiwan
Prior art keywords
component
mass
composition
formula
aforementioned
Prior art date
Application number
TW109116655A
Other languages
Chinese (zh)
Inventor
小林之人
Original Assignee
日商信越化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越化學工業股份有限公司 filed Critical 日商信越化學工業股份有限公司
Publication of TW202111072A publication Critical patent/TW202111072A/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • C08L2203/206Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

Provided is a silicone composition for die bonding, which imparts a cured product having excellent hardness and chip shear strength and suppresses contamination of a metal gasket in an optical semiconductor device. The silicone composition for die bonding contains, at a specific blending ratio, a silicone resin; (A) An organopolysiloxane which contains two or more alkenyl groups per molecule and has a viscosity of 100 mPas or less at 25 DEG C; (B) a specific three-dimensional network organopolysiloxane that is wax-like or solid at 23 DEG C; (C) a specific organohydrogenpolysiloxane having at least two hydrogen atoms bonded to a silicon atom in one molecule; (D) a specific polysiloxane containing an epoxy group; and (E) a platinum group metal-based catalyst.

Description

黏晶用聚矽氧組成物、其硬化物及光半導體裝置Polysilicon oxide composition for die bonding, its hardened product and optical semiconductor device

本發明有關黏晶用聚矽氧組成物、其硬化物及使用其硬化物之光半導體裝置。The present invention relates to a polysilicon oxide composition for die bonding, a cured product thereof, and an optical semiconductor device using the cured product.

最近,發光二極體(以下稱為「LED」)元件之密封材及黏晶材,由於因LED元件之亮度提高而使元件之發熱變大,故使用耐久性良好之聚矽氧樹脂(專利文獻1、2)。尤其黏晶材中樹脂過軟時,於黏晶步驟之後進行之線黏合步驟中,發生無法進行黏合之缺點,故要求高硬度之黏晶材。Recently, the sealing material and die bonding material of light-emitting diode (hereinafter referred to as "LED") components have increased heat generation due to the increase in the brightness of LED components. Therefore, the use of silicone resin with good durability (patented) Literature 1, 2). Especially when the resin in the die-bonding material is too soft, in the wire bonding step performed after the die-bonding step, the defect that bonding cannot be performed occurs, so a die-bonding material with high hardness is required.

又,LED裝置近年來進展小型化,而要求接著性更高之黏晶材。黏晶材之接著力不充分時,LED製造中於線黏合步驟會發生晶片剝離等,而於製造面上成為致命問題。迄今之聚矽氧黏晶材雖耐久性優異,但接著性不充分,而期望具有更高晶粒剪切強度之材料。In addition, LED devices have progressed in miniaturization in recent years, and die-bonding materials with higher adhesion are required. When the bonding force of the die-bonding material is insufficient, chip peeling may occur during the wire bonding step in LED manufacturing, which becomes a fatal problem on the manufacturing surface. Although the polysilicone bonded crystal materials have excellent durability, the adhesiveness is insufficient, and materials with higher grain shear strength are desired.

除了高晶粒剪切強度以外,亦有黏晶材加熱硬化時產生之低分子成分污染晶片之金焊墊之情況,此將成為於線黏合步驟中產生缺點之原因。聚矽氧中雖為了提高接著性而使用具有接著性官能基之矽烷偶合劑,但一般矽烷偶合劑為低分子量,於黏晶之硬化步驟中施加的熱(100~180℃)會揮發,而有發生孔隙或晶粒剪切強度降低,成為發生金焊墊污染之原因的問題。亦即,期望能提高晶粒剪切強度同時無金焊墊污染之黏晶材。 [先前技術文獻] [專利文獻]In addition to the high grain shear strength, there are also cases where the low-molecular components generated during the heating and hardening of the die-bonding material contaminate the gold pad of the chip, which will become the cause of the shortcomings in the wire bonding step. Although polysiloxanes use silane coupling agents with adhesive functional groups in order to improve adhesion, generally silane coupling agents are of low molecular weight and will volatilize when the heat (100~180℃) is applied during the hardening step of the die. Porosity occurs or the shear strength of the crystal grains is reduced, which is the cause of the contamination of the gold pad. That is, it is desired to increase the shear strength of the die without contamination of the gold pad. [Prior Technical Literature] [Patent Literature]

[專利文獻1] 日本特開2006-342200號公報 [專利文獻2] 日本特開2010-285571號公報[Patent Document 1] JP 2006-342200 A [Patent Document 2] JP 2010-285571 A

[發明欲解決之課題][The problem to be solved by the invention]

本發明係鑑於上述情況而完成者,目的在於提供可賦予硬度及晶粒剪切強度優異之硬化物且光半導體裝置中金焊墊污染經抑制之黏晶用聚矽氧組成物。 [用以解決課題之手段]The present invention was completed in view of the above circumstances, and its object is to provide a polysilicon oxide composition for die bonding that can impart a cured product with excellent hardness and die shear strength and suppressed contamination of the gold pad in an optical semiconductor device. [Means to solve the problem]

為了達成上述課題,本發明提供含有下述(A)成分~(E)成分之黏晶用聚矽氧組成物。 (A)1分子中含有2個以上烯基、於25℃下之黏度為100 mPa・s以下之有機聚矽氧烷, (B)以下述式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷:相對於(A)成分及(B)成分之合計100質量份,為70~95質量份,

Figure 02_image001
(式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+b+c+d+e+f+g+h=1之數) (C)以下述平均組成式(2)表示,1分子中具有至少2個鍵結於矽原子之氫原子之有機氫聚矽氧烷:相對於(A)成分及(B)成分中之全部鍵結於矽原子之烯基之合計數,(C)成分中之鍵結於矽原子之氫原子之數成為0.5~5.0倍之量,
Figure 02_image003
(式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數) (D)以下述式(3)表示之含有環氧基之聚矽氧烷:相對於(A)成分、(B)成分及(C)成分之合計100質量份為1~25質量份,
Figure 02_image005
(式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數), (E)鉑族金屬系觸媒:相對於(A)成分、(B)成分、(C)成分及(D)成分之合計質量,以鉑屬金屬元素之質量換算為1~500ppm。In order to achieve the above-mentioned problems, the present invention provides a polysilicon oxide composition for crystal bonding containing the following (A) components to (E) components. (A) Organopolysiloxane with 2 or more alkenyl groups in one molecule and a viscosity of 100 mPa・s or less at 25°C, (B) represented by the following formula (1), waxy at 23°C Or solid three-dimensional network organopolysiloxane: 70 to 95 parts by mass relative to 100 parts by mass of the total of (A) component and (B) component,
Figure 02_image001
(In the formula, R 1 are the same or different substituted or unsubstituted monovalent hydrocarbon groups without alkenyl, R 2 are the same or different alkenyl groups, a, b, c, d, e, f, g and h is the number that satisfies a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0, and h≧0, but satisfies b+c>0, f+g +h>0 and a+b+c+d+e+f+g+h=1) (C) is represented by the following average composition formula (2), and there are at least two silicon atoms in one molecule The organohydrogen polysiloxane of hydrogen atoms: relative to the total number of alkenyl groups bonded to silicon atoms in the components (A) and (B), the hydrogen bonded to silicon atoms in the component (C) The number of atoms becomes 0.5~5.0 times the amount,
Figure 02_image003
(In the formula, R 1 is the same as the above, i and j are the numbers satisfying 0.7≦i≦2.1, 0.001≦j≦1.0, and 0.8≦i+j≦3.0) (D) Containing ring represented by the following formula (3) Polysiloxane of oxy group: 1-25 parts by mass relative to 100 parts by mass of the total of (A) component, (B) component and (C) component,
Figure 02_image005
(In the formula, R 1 is the same as above, R 3 is the same or different epoxy-containing group, R 4 is the same or different, is a substituted or unsubstituted monovalent hydrocarbon group without alkenyl, k and m are respectively In order to satisfy the number of k>0, m≧0 and k+m=1, the n system satisfies the number of 0≦n≦2), (E) platinum group metal catalyst: relative to (A) component, (B) The total mass of components, (C) components, and (D) components is 1 to 500 ppm in terms of the mass of platinum metal elements.

依據本發明之黏晶用聚矽氧組成物,可賦予硬度及晶粒剪切強度優異且光半導體裝置中金焊墊污染經抑制之硬化物。According to the polysilicon oxide composition for die bonding of the present invention, it is possible to impart a hardened product with excellent hardness and die shear strength and suppressed contamination of the gold pad in the optical semiconductor device.

前述(A)成分較佳係以下述式(4)表示之有機聚矽氧烷,

Figure 02_image007
(式中,R1 及R2 與前述相同,o、p、q、r分別為滿足q≧0、r≧0、o≧0、p≧0之數,但係滿足q+r>0、r+o>0、o+p>0且o+p+q+r=1之數)。The aforementioned component (A) is preferably an organopolysiloxane represented by the following formula (4),
Figure 02_image007
(In the formula, R 1 and R 2 are the same as above, o, p, q, r are the numbers satisfying q≧0, r≧0, o≧0, p≧0, but satisfying q+r>0, r+o>0, o+p>0 and o+p+q+r=1).

前述(A)成分若為前述特性之有機聚矽氧烷,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異且光半導體裝置中金焊墊污染更受抑制之硬化物者。If the aforementioned component (A) is an organopolysiloxane with the aforementioned characteristics, the polysiloxane composition for die bonding can impart more excellent hardness and die shear strength, and the contamination of the gold pad in the optical semiconductor device is more suppressed. Hardened objects.

前述式(1)中,較佳b>0且h>0。 前述式(1)中若b>0且h>0,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異,特別是可賦予接著強度並且光半導體裝置中金焊墊污染更受抑制之硬化物者。In the aforementioned formula (1), b>0 and h>0 are preferred. In the aforementioned formula (1), if b>0 and h>0, the polysilicon oxide composition for die bonding becomes more excellent in imparting hardness and grain shear strength, and in particular, imparting bonding strength and gold bonding in optical semiconductor devices. Those with hardened materials whose mat pollution is more restrained.

前述(C)成分較佳係於1大氣壓下於150℃加熱30分鐘時的質量減少為1質量%以下者。 前述(C)成分若為前述者,則黏晶用聚矽氧組成物成為光半導體裝置中金焊墊污染更受抑制者。The aforementioned component (C) preferably has a mass reduction of 1% by mass or less when heated at 150°C for 30 minutes under 1 atmosphere. If the aforementioned component (C) is the aforementioned one, the polysilicon oxide composition for die bonding will be the one in which the contamination of the gold pad in the optical semiconductor device is more suppressed.

前述(D)成分較佳係於1大氣壓下於150℃加熱30分鐘時的質量減少為5質量%以下者。 前述(D)成分若為前述者,則黏晶用聚矽氧組成物成為光半導體裝置中金焊墊污染更受抑制者。The aforementioned component (D) preferably has a mass reduction of 5% by mass or less when heated at 150°C for 30 minutes under 1 atmosphere. If the aforementioned component (D) is the aforementioned one, the polysilicon oxide composition for die bonding will be more suppressed in the contamination of the gold pad in the optical semiconductor device.

前述(D)成分中,較佳R3 係以下述式(5)表示之基,

Figure 02_image009
(式中,s為1~6之整數,虛線表示鍵結鍵)。In the aforementioned component (D), R 3 is preferably a group represented by the following formula (5),
Figure 02_image009
(In the formula, s is an integer from 1 to 6, and the dashed line represents the bonding bond).

R3 若為前述特定之官能基,則黏晶用聚矽氧組成物成為可賦予硬度及晶粒剪切強度更優異且光半導體裝置中金焊墊污染更受抑制之硬化物者。If R 3 is the aforementioned specific functional group, the polysiloxane composition for die bonding becomes a hardened product that can impart more excellent hardness and die shear strength, and can more suppress the contamination of the gold pad in the optical semiconductor device.

前述組成物中較佳全部R1 中之80莫耳%以上為甲基。 前述組成物中若全部R1 中之80莫耳%以上為甲基,則黏晶用聚矽氧組成物成為可賦予耐熱性、耐光性(耐紫外線性)及對因熱及紫外線等之應力所致之變色等之劣化的耐性優異之硬化物者。In the aforementioned composition, it is preferable that more than 80 mol% of all R 1 are methyl groups. If 80 mol% or more of all R 1 in the aforementioned composition is methyl, the polysiloxane composition for die bonding can impart heat resistance, light resistance (ultraviolet resistance), and stress against heat and ultraviolet rays. A cured product with excellent resistance to deterioration such as discoloration.

前述組成物較佳含有(F)BET比表面積為100~ 400m2 /g之發煙氧化矽。 前述組成物若含有前述發煙氧化矽,則前述組成物成為觸變性及作業性優異者。The aforementioned composition preferably contains (F) fumed silica having a BET specific surface area of 100 to 400 m 2 /g. If the composition contains the fumed silica, the composition has excellent thixotropy and workability.

又本發明提供一種聚矽氧硬化物,其係前述黏晶用聚矽氧組成物的硬化物。 依據這種聚矽氧硬化物,成為硬度及晶粒剪切強度優異,與基板・LED晶片等之接著力高,尤其可作為LED元件等之黏晶所用之黏晶材者。The present invention also provides a cured polysilicone, which is a cured product of the aforementioned polysilicone composition for crystal bonding. According to this polysiloxy hardened product, it has excellent hardness and die shear strength, and has high adhesion to substrates, LED chips, etc., and can be especially used as a die bonding material for die bonding of LED components.

再者,本發明提供一種光半導體裝置,其係前述聚矽氧硬化物將光半導體元件予以黏晶者。 依據此種光半導體裝置,由於使用前述聚矽氧硬化物作為硬度及晶粒剪切強度優異,與基板・LED等之接著力高之黏晶材,故成為信賴性較高者。 [發明效果]Furthermore, the present invention provides an optical semiconductor device, which is obtained by bonding an optical semiconductor element with the aforementioned polysiloxy hardened material. According to this type of optical semiconductor device, since the aforementioned cured polysilicon oxide is used as a die bonding material that has excellent hardness and die shear strength, and has high adhesion to substrates, LEDs, etc., it is highly reliable. [Effects of the invention]

如以上,依據本發明之黏晶用聚矽氧組成物,由於可賦予硬度及晶粒剪切強度優異之硬化物且光半導體裝置中金焊墊污染經抑制者,故作為LED元件等之黏晶所用之黏晶材特別有用。而且,於黏晶步驟之後進行之線黏合步驟中,難以發生晶片剝離、無法黏晶等之缺點,以該聚矽氧硬化物將光半導體元件黏晶之光半導體裝置之信賴性高,其生產性亦提高。As mentioned above, the polysilicon oxide composition for die bonding according to the present invention can provide hardened products with excellent hardness and die shear strength and suppressed contamination of gold pads in optical semiconductor devices, so it is used as a bonding agent for LED devices, etc. The bonding material used for the crystal is particularly useful. Moreover, in the wire bonding step performed after the die bonding step, the defects such as chip peeling and inability to bond the die are difficult to occur. The optical semiconductor device using the polysilicon oxide hardening material to bond the optical semiconductor element to the die has high reliability, and its production Sex is also improved.

如上述,要求開發金焊墊污染較少之LED元件等之黏晶所用之黏晶材,可賦予硬度及晶粒剪切強度優異之聚矽氧硬化物的黏晶用聚矽氧組成物。As mentioned above, it is required to develop a die-bonding material for die bonding of LED devices with less contamination by gold pads, and a polysilicone composition for die-bonding that can impart a polysilicon cured product with excellent hardness and die shear strength.

本發明人等針對上述課題重複積極檢討之結果,發現若為包含後述(A)、(B)、(C)、(D)及(E)成分之黏晶用聚矽氧組成物,可達成上述課題,因而完成本發明。The inventors of the present invention have repeatedly actively reviewed the above-mentioned issues and found that if it is a polysilicone composition for crystal bonding that includes the following components (A), (B), (C), (D) and (E), it can be achieved The above-mentioned problems have led to the completion of the present invention.

亦即,本發明係含有下述(A)成分~(E)成分之黏晶用聚矽氧組成物。 (A)1分子中含有2個以上烯基、於25℃下之黏度為100 mPa・s以下之有機聚矽氧烷, (B)以下述式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷:相對於(A)成分及(B)成分之合計100質量份,為70~95質量份,

Figure 02_image011
(式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+ b+c+d+e+f+g+h=1之數), (C)以下述平均組成式(2)表示,1分子中具有至少2個鍵結於矽原子之氫原子之有機氫聚矽氧烷:相對於(A)成分及(B)成分中之全部鍵結於矽原子之烯基之合計數,(C)成分中之鍵結於矽原子之氫原子之數成為0.5~5.0倍之量,
Figure 02_image013
(式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數), (D)以下述式(3)表示之含有環氧基之聚矽氧烷:相對於(A)成分、(B)成分及(C)成分之合計100質量份為1~25質量份,
Figure 02_image015
(式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數), (E)鉑族金屬系觸媒:相對於(A)成分、(B)成分、(C)成分及(D)成分之合計質量,以鉑屬金屬元素之質量換算為1~500ppm。That is, the present invention is a polysiloxane composition for crystal bonding containing the following (A) components to (E) components. (A) Organopolysiloxane with 2 or more alkenyl groups in one molecule and a viscosity of 100 mPa・s or less at 25°C, (B) represented by the following formula (1), waxy at 23°C Or solid three-dimensional network organopolysiloxane: 70 to 95 parts by mass relative to 100 parts by mass of the total of (A) component and (B) component,
Figure 02_image011
(In the formula, R 1 are the same or different substituted or unsubstituted monovalent hydrocarbon groups without alkenyl, R 2 are the same or different alkenyl groups, a, b, c, d, e, f, g and h is the number that satisfies a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0, and h≧0, but satisfies b+c>0, f+g +h>0 and a+b+c+d+e+f+g+h=1), (C) is represented by the following average composition formula (2), and there are at least 2 bonding to silicon atoms in a molecule The organohydrogen polysiloxane of hydrogen atoms: relative to the total number of alkenyl groups bonded to silicon atoms in the components (A) and (B), the hydrogen bonded to silicon atoms in the component (C) The number of atoms becomes 0.5~5.0 times the amount,
Figure 02_image013
(In the formula, R 1 is the same as the above, i and j satisfy the number of 0.7≦i≦2.1, 0.001≦j≦1.0, and 0.8≦i+j≦3.0), (D) is contained in the following formula (3) Polysiloxane of epoxy group: 1-25 parts by mass relative to 100 parts by mass of the total of (A) component, (B) component and (C) component,
Figure 02_image015
(In the formula, R 1 is the same as above, R 3 is the same or different epoxy-containing group, R 4 is the same or different, is a substituted or unsubstituted monovalent hydrocarbon group without alkenyl, k and m are respectively In order to satisfy the number of k>0, m≧0 and k+m=1, the n system satisfies the number of 0≦n≦2), (E) platinum group metal catalyst: relative to (A) component, (B) The total mass of components, (C) components, and (D) components is 1 to 500 ppm in terms of the mass of platinum metal elements.

以下針對本發明詳細說明,但本發明並未限定於此。 [黏晶用聚矽氧組成物] 本發明之黏晶用聚矽氧組成物含有下述(A)成分~(E)成分。 以下針對各成分詳細說明。The following describes the present invention in detail, but the present invention is not limited thereto. [Polysiloxane composition for die bonding] The silicone composition for crystal bonding of the present invention contains the following components (A) to (E). Each component is explained in detail below.

<(A)成分> (A)成分係1分子中含有2個以上烯基、於25℃下之黏度為100mPa・s以下之有機聚矽氧烷。 (A)成分之黏度於25℃下之利用旋轉黏度計之測定值為100mPa・s以下,較佳為30mPa・s以下。超過100mPa・s之情況,由於黏晶用聚矽氧組成物之黏度變高,故藉由黏晶機於LED基板上塗佈組成物之步驟中處理困難。又,以下中,只要未特別指明,則黏度為25℃下之利用旋轉黏度計之測定值。<(A) Ingredient> (A) Component is an organopolysiloxane with two or more alkenyl groups in one molecule and a viscosity of 100 mPa・s or less at 25°C. (A) The viscosity of the component is measured with a rotary viscometer at 25° C. The value is 100mPa・s or less, preferably 30mPa・s or less. In the case of more than 100mPa・s, the viscosity of the polysiloxane composition for die bonding becomes higher, so it is difficult to handle the process in the step of coating the composition on the LED substrate by the die bonding machine. In addition, in the following, unless otherwise specified, the viscosity is the value measured with a rotary viscometer at 25°C.

作為(A)成分所含之烯基並未特別限定,但較佳為乙烯基、烯丙基、乙炔基等之碳原子數2~10之烯基,更佳為2~6之烯基,又更佳為乙烯基。The alkenyl group contained in the component (A) is not particularly limited, but it is preferably an alkenyl group having 2 to 10 carbon atoms such as a vinyl group, an allyl group, and an ethynyl group, and more preferably an alkenyl group having 2 to 6 carbon atoms. More preferably, it is vinyl.

(A)成分可為不含烯基之取代或非取代一價烴基,作為其例若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為該一價烴基可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯基乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較佳為烷基,更佳為甲基。The component (A) may be a substituted or unsubstituted monovalent hydrocarbon group that does not contain an alkenyl group. As an example, it is not particularly limited if it does not have an alkenyl group, but it is preferably substituted or unsubstituted with 1 to 8 carbon atoms A monovalent hydrocarbon group. Examples of the monovalent hydrocarbon group include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl and xylyl, and benzyl Aralkyl groups such as chloromethyl, phenylethyl, etc.; halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl. Preferably it is an alkyl group, more preferably it is a methyl group.

作為(A)成分,舉例為以下述平均組成式(4)表示之分支狀有機聚矽氧烷。

Figure 02_image017
(式中,R1 分別為相同或不同,不含烯基之取代或非取代一價烴基,R2 分別為相同或不同之烯基,o、p、q、r分別為滿足q≧0、r≧0、o≧0、p≧0之數,但係滿足q+r>0、r+o>0、o+p>0且o+p+q+r=1之數)。As the (A) component, a branched organopolysiloxane represented by the following average composition formula (4) is exemplified.
Figure 02_image017
(In the formula, R 1 are the same or different substituted or unsubstituted monovalent hydrocarbon groups that do not contain alkenyl groups, R 2 are the same or different alkenyl groups, and o, p, q, and r are each satisfying q≧0, r≧0, o≧0, p≧0, but satisfying q+r>0, r+o>0, o+p>0 and o+p+q+r=1).

作為R1 表示之不含烯基之取代或非取代之一價烴基,若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為該一價烴基可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯基乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較佳為烷基,更佳為甲基。The substituted or unsubstituted monovalent hydrocarbon group not containing an alkenyl group represented by R 1 is not particularly limited if it does not have an alkenyl group, but it is preferably a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms Hydrocarbyl. Examples of the monovalent hydrocarbon group include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl and xylyl, and benzyl Aralkyl groups such as chloromethyl, phenylethyl, etc.; halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl. Preferably it is an alkyl group, more preferably it is a methyl group.

作為R2 表示之烯基並未特別限定,但較佳為乙烯基、烯丙基、乙炔基等之碳原子數2~10之烯基,更佳為碳數2~6之烯基,又更佳為乙烯基。The alkenyl group represented by R 2 is not particularly limited, but is preferably an alkenyl group having 2 to 10 carbon atoms such as vinyl, allyl, and ethynyl, more preferably an alkenyl group having 2 to 6 carbon atoms, and More preferably, it is vinyl.

作為分支狀有機聚矽氧烷之具體例,舉例為以下述式表示者等。

Figure 02_image019
As a specific example of a branched organopolysiloxane, the one represented by the following formula etc. are mentioned, for example.
Figure 02_image019

(A)成分亦可使用具有直鏈狀分子構造之有機聚矽氧烷。作為直鏈狀有機聚矽氧烷之具體例舉例為以下述式表示者。

Figure 02_image021
(上述式中,括弧內之矽氧烷單位之排列順序可為任意)。 (A)成分可單獨使用一種,亦可併用兩種以上。For component (A), organopolysiloxanes having a linear molecular structure can also be used. As a specific example of the linear organopolysiloxane, one represented by the following formula is exemplified.
Figure 02_image021
(In the above formula, the order of the siloxane units in parentheses can be arbitrary). (A) A component may be used individually by 1 type, and may use 2 or more types together.

<(B)成分> (B)成分係以下述平均組成式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷。(B)成分係用以維持硬化物之透明性,獲得補強性之成分,係於分子中含有鍵結於矽原子之烯基及SiO3/2 單位或SiO4/2 單位之至少一者之三維網狀之有機聚矽氧烷樹脂。此處,所謂「蠟狀」意指於23℃下之黏度為10,000,000mPa・s以上,尤其100,000,000 mPa・s以上之幾乎不顯示自我流動性之橡膠狀(生橡膠)。<Component (B)> The component (B) is represented by the following average composition formula (1), and is a waxy or solid three-dimensional network organopolysiloxane at 23°C. (B) The component is used to maintain the transparency of the hardened material and obtain reinforcement. It contains at least one of the alkenyl group bonded to the silicon atom and the SiO 3/2 unit or the SiO 4/2 unit in the molecule. Three-dimensional network of organopolysiloxane resin. Here, the so-called "waxy" means that the viscosity at 23°C is 10,000,000 mPa・s or more, especially 100,000,000 mPa・s or more, which is rubbery (raw rubber) that hardly shows self-flowing properties.

Figure 02_image023
(式中,R1 及R2 與前述相同,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+b+c+d+e+f+ g+h=1之數)。
Figure 02_image023
(In the formula, R 1 and R 2 are the same as the above, a, b, c, d, e, f, g, and h respectively satisfy a≧0, b≧0, c≧0, d≧0, e≧0 , F≧0, g≧0 and h≧0, but satisfying b+c>0, f+g+h>0 and a+b+c+d+e+f+g+h=1 ).

R1 舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。 R2 舉例為與(A)成分中例示者相同者,較佳為碳原子數2~10之烯基,更佳為碳原子數2~6之烯基,又更佳為乙烯基。 較好a為0~0.65,b為0.1~0.65,c為0~0.65,d為0~0.5,e為0~0.5,f為0~0.8,g為0~0.8,h為0~0.6之數。且f+g+h較好為0.05以上,更佳為0.1~0.9之數,又更佳為0.2~0.6之數。Examples of R 1 are the same as those exemplified in the component (A), preferably an alkyl group having 1 to 8 carbon atoms, and more preferably a methyl group. Examples of R 2 are the same as those exemplified in the component (A), preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms, and still more preferably a vinyl group. Preferably, a is 0 to 0.65, b is 0.1 to 0.65, c is 0 to 0.65, d is 0 to 0.5, e is 0 to 0.5, f is 0 to 0.8, g is 0 to 0.8, and h is 0 to 0.6. number. Also, f+g+h is preferably 0.05 or more, more preferably a number of 0.1 to 0.9, and still more preferably a number of 0.2 to 0.6.

(B)成分中,鍵結至矽原子之烯基含量,較佳(B)成分每100g為0.01~1mol之範圍,更佳為0.1~0.6mol之範圍。上述含量若為0.01~ 1mol之範圍,則交聯反應充分進行,獲得更高硬度之硬化物。In the component (B), the content of the alkenyl group bonded to the silicon atom is preferably in the range of 0.01 to 1 mol per 100 g of the component (B), more preferably in the range of 0.1 to 0.6 mol. If the above content is in the range of 0.01 to 1 mol, the cross-linking reaction proceeds sufficiently to obtain a hardened product with higher hardness.

(B)成分較佳具有R2 3 SiO1/2 單位及SiO4/2 單位(亦即b>0且h>0),該情況下,可對由組成物所得之硬化物賦予接著強度。又,(B)成分之由SiO4/2 單位及/或SiO3/2 單位所成之分支構造為必須,但亦可進而含有甲基乙烯基矽氧基單位、二甲基矽氧基單位等之SiO2/2 (SiO)單位、二甲基乙烯基矽氧基單位、三甲基矽氧基單位等之SiO1/2 單位。SiO4/2 單位及/或SiO3/2 單位之含量較佳為(B)成分之有機聚矽氧烷樹脂中之全部矽氧烷單位之5莫耳%以上,更好為10莫耳~95莫耳%,特佳為20~60莫耳%。The component (B) preferably has R 2 3 SiO 1/2 unit and SiO 4/2 unit (that is, b>0 and h>0). In this case, it is possible to impart adhesive strength to the cured product obtained from the composition. In addition, the branch structure of the component (B) composed of SiO 4/2 units and/or SiO 3/2 units is necessary, but it can also contain methyl vinyl siloxy units and dimethyl siloxy units. SiO 2/2 (SiO) unit, dimethyl vinyl siloxy unit, trimethyl siloxy unit, etc. SiO 1/2 unit. The content of SiO 4/2 unit and/or SiO 3/2 unit is preferably at least 5 mol% of all silicone units in the organopolysiloxane resin of component (B), more preferably 10 mol~ 95 mol%, particularly preferably 20-60 mol%.

(B)成分之含量,相對於(A)成分及(B)成分之合計100質量份為70~95質量份,較佳為75~95質量份,更佳為80~90質量份。(B)成分之調配量未達70質量份時,有接著性差而無法獲得高硬度之硬化物之情況,超過95質量份時,組成物之黏度顯著變高,轉印變困難,將組成物使用於黏晶材等使用時之處理變困難。The content of (B) component is 70 to 95 parts by mass, preferably 75 to 95 parts by mass, more preferably 80 to 90 parts by mass relative to 100 parts by mass of the total of (A) and (B) components. (B) When the blending amount of the component is less than 70 parts by mass, the adhesion may be poor and a hardened product with high hardness may not be obtained. When it exceeds 95 parts by mass, the viscosity of the composition becomes significantly higher, and the transfer becomes difficult. It becomes difficult to handle when used in bonding crystal materials.

作為(B)成分之具體例舉例為例如以下者。

Figure 02_image025
Figure 02_image027
(B)成分可單獨使用一種亦可併用兩種以上。As a specific example of (B) component, the following are mentioned, for example.
Figure 02_image025
Figure 02_image027
(B) A component may be used individually by 1 type, and may use 2 or more types together.

<(C)成分> (C)成分係作為藉由與(A)成分及(B)成分中所含之烯基之氫矽烷化反應而交聯之交聯劑發揮作用。(C)成分係以下述平均組成式(2)表示之1分子中具有至少2個鍵結至矽原子之氫原子(即Si-H基)之有機氫聚矽氧烷。

Figure 02_image029
(式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數)。<(C) Component> The (C) component functions as a crosslinking agent that crosslinks by the hydrosilylation reaction with the alkenyl group contained in the (A) component and (B) component. The component (C) is an organohydrogenpolysiloxane having at least two hydrogen atoms (ie, Si-H groups) bonded to silicon atoms in one molecule represented by the following average composition formula (2).
Figure 02_image029
(In the formula, R 1 is the same as above, and i and j satisfy the number of 0.7≦i≦2.1, 0.001≦j≦1.0, and 0.8≦i+j≦3.0).

R1 舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。 又,本發明之組成物中之以R1 表示之烯基以外之鍵結至矽原子之全部一價烴基之總數所佔之甲基的比例較佳為80莫耳%以上(亦即前述R1 中80莫耳%以上為甲基),特佳為90莫耳%以上時,由於耐熱性、耐光性(耐紫外線性)及對因熱及紫外線等之應力所致之變色等之劣化的耐性優異故而較佳。 (C)成分於1分子中具有至少2個,較佳2~200個,更佳3~100個,又更佳4~50個鍵結於矽原子之氫原子(Si-H基)。Examples of R 1 are the same as those exemplified in the component (A), preferably an alkyl group having 1 to 8 carbon atoms, and more preferably a methyl group. Furthermore, in the composition of the present invention, the ratio of the methyl group to the total number of all monovalent hydrocarbon groups bonded to the silicon atom other than the alkenyl group represented by R 1 is preferably 80 mol% or more (that is, the aforementioned R 1 , 80 mol% or more are methyl groups), particularly preferably 90 mol% or more, due to deterioration of heat resistance, light resistance (ultraviolet resistance), and discoloration caused by stress such as heat and ultraviolet rays It is preferable because it has excellent resistance. The component (C) has at least two in one molecule, preferably 2 to 200, more preferably 3 to 100, and more preferably 4 to 50 hydrogen atoms (Si-H groups) bonded to silicon atoms.

(C)成分之調配量,基於交聯平衡之觀點,相對於(A)及(B)成分中之全部鍵結於矽原子之烯基,(C)成分之鍵結至矽原子之氫原子(Si-H基)數成為0.5~5.0倍,較佳為0.7~3.0倍之量。前述氫原子之數相對於前述烯基之合計數若未達0.5倍,則交聯未充分進行,無法獲得硬度優異之硬化物。前述氫原子之數相對於前述烯基之合計數若多於5.0倍,則缺乏聚矽氧硬化物之柔軟性,聚矽氧硬化物變脆。The blending amount of (C) component is based on the viewpoint of cross-linking balance, relative to all the alkenyl groups in (A) and (B) that are bonded to silicon atoms, and the hydrogen atom of (C) component is bonded to silicon atoms The (Si-H group) number becomes 0.5 to 5.0 times, preferably 0.7 to 3.0 times. If the number of the aforementioned hydrogen atoms is less than 0.5 times the total number of the aforementioned alkenyl groups, crosslinking will not proceed sufficiently, and a cured product having excellent hardness will not be obtained. If the number of the aforementioned hydrogen atoms is more than 5.0 times the total number of the aforementioned alkenyl groups, the silicone cured product lacks flexibility and the silicone cured product becomes brittle.

(C)成分於25℃之黏度並未特別限定,但較佳為100mPa・s以下,更佳為5~100 mPa・s之範圍。(C) The viscosity of the component at 25°C is not particularly limited, but is preferably 100 mPa・s or less, and more preferably in the range of 5 to 100 mPa・s.

(C)成分於1大氣壓下於150℃加熱30分鐘後的質量減少,相對於加熱前之質量較佳為1質量%以下。若為該範圍,則可更減低金焊墊污染。 (C)成分之有機氫聚矽氧烷之分子構造可為直鏈狀、環狀、分支鏈狀、三維網狀構造之任一者,1分子中之矽原子數較佳為10~300個,更佳為50~200個。若如此,則可獲得硬化時揮發分較少,金焊墊污染更少之組成物。(C) The mass of the component after heating at 150°C under 1 atmosphere pressure for 30 minutes decreases, and it is preferably 1 mass% or less with respect to the mass before heating. If it is in this range, the contamination of the gold pad can be further reduced. (C) The molecular structure of the organohydrogen polysiloxane of the component can be any of linear, cyclic, branched, or three-dimensional network structure. The number of silicon atoms in one molecule is preferably 10 to 300 , More preferably 50~200. If so, a composition with less volatile matter during hardening and less contamination of the gold pad can be obtained.

作為(C)成分之有機氫聚矽氧烷,可舉例為1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、三(氫二甲基矽氧基)甲基矽烷、三(氫二甲基矽氧基)苯基矽烷、甲基氫環聚矽氧烷、甲基氫矽氧烷・二甲基矽氧烷環狀共聚物、兩末端三甲基矽氧基封端甲基氫聚矽氧烷、兩末端三甲基矽氧基封端二甲基矽氧烷・甲基氫矽氧烷共聚物、兩末端二甲基氫矽氧基封端二甲基聚矽氧烷、兩末端二甲基氫矽氧基封端甲基氫聚矽氧烷、兩末端二甲基氫矽氧基封端二甲基矽氧烷・甲基氫矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・二苯基矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・二苯基矽氧烷・二甲基矽氧烷共聚物、兩末端三甲基矽氧基封端甲基氫矽氧烷・甲基苯基矽氧烷・二甲基矽氧烷共聚物、兩末端二甲基氫矽氧基封端甲基氫矽氧烷・二甲基矽氧烷・二苯基矽氧烷共聚物、兩末端二甲基氫矽氧基封端甲基氫矽氧烷・二甲基矽氧烷・甲基苯基矽氧烷共聚物、由(CH3 )2 HSiO1/2 單位、(CH3 )3 SiO1/2 單位及SiO4/2 單位所成之共聚物、由 (CH3 )2 HSiO1/2 單位及SiO4/2 單位所成之共聚物、由 (CH3 )2 HSiO1/2 單位、SiO4/2 單位及(C6 H5 )3 SiO1/2 單位所成之共聚物等,此外亦舉例為下述通式(6)或(7)表示者。

Figure 02_image031
(式中,R1 如前述,t為2~40,較佳為8~35之整數,u為6~8之整數)。The organohydrogen polysiloxane as the component (C) can be exemplified by 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane, tri (Hydrogen dimethyl siloxy) methyl silane, tris (hydro dimethyl siloxy) phenyl silane, methyl hydrogen ring polysiloxane, methyl hydrogen siloxane, dimethyl siloxane ring -Like copolymer, both ends of trimethylsiloxy-terminated methylhydropolysiloxane, both ends of trimethylsiloxy-terminated dimethylsiloxane, methylhydrosiloxane copolymer, both ends Dimethylhydrosiloxy-terminated dimethylpolysiloxane, two-terminal dimethylhydrosiloxy-terminated methylhydropolysiloxane, two-terminal dimethylhydrosiloxy-terminated dimethylpolysiloxane Silicone, methylhydrosiloxane copolymer, trimethylsiloxy terminated methylhydrosiloxane at both ends, diphenylsiloxane copolymer, trimethylsiloxy terminated methyl at both ends Hydrogen siloxane, diphenyl siloxane, dimethyl siloxane copolymer, trimethyl siloxy terminated methyl hydrosiloxane at both ends, methyl phenyl siloxane, dimethyl Silicone copolymer, two-terminal dimethylhydrosiloxy-terminated methylhydrosiloxane, dimethylsiloxane, diphenylsiloxane copolymer, two-terminal dimethylhydrosiloxane-terminated methylhydrosiloxane End methylhydrosiloxane, dimethylsiloxane, methylphenylsiloxane copolymer, composed of (CH 3 ) 2 HSiO 1/2 unit, (CH 3 ) 3 SiO 1/2 unit and SiO 4 /2 units, copolymers composed of (CH 3 ) 2 HSiO 1/2 units and SiO 4/2 units, copolymers composed of (CH 3 ) 2 HSiO 1/2 units, SiO 4/2 units, and (C 6 H 5 ) 3 SiO 1/2 unit composed of copolymers, etc., and also exemplified by the following general formula (6) or (7).
Figure 02_image031
(In the formula, R 1 is as mentioned above, t is 2-40, preferably an integer of 8 to 35, and u is an integer of 6 to 8).

作為(C)成分之具體例舉例為以下述式(8)表示者,

Figure 02_image033
(式中,t如前述,Me為甲基)、 以下述式表示者等。As a specific example of the component (C), one represented by the following formula (8) is exemplified,
Figure 02_image033
(In the formula, t is as described above, and Me is a methyl group), those represented by the following formula, and the like.

Figure 02_image035
(上述式中,括弧內之矽氧烷單位之排列順序為任意)。
Figure 02_image035
(In the above formula, the order of the siloxane units in parentheses is arbitrary).

(C)成分之有機氫聚矽氧烷可單獨使用一種亦可併用兩種以上。(C) The organohydrogen polysiloxane of the component may be used alone or in combination of two or more.

<(D)成分> (D)成分係以下述式(3)表示之含有環氧基之聚矽氧烷。

Figure 02_image037
(式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數)。<(D) component> The (D) component is an epoxy group-containing polysiloxane represented by the following formula (3).
Figure 02_image037
(In the formula, R 1 is the same as above, R 3 is the same or different epoxy-containing group, R 4 is the same or different, is a substituted or unsubstituted monovalent hydrocarbon group without alkenyl, k and m are respectively In order to satisfy the number of k>0, m≧0 and k+m=1, n is a number satisfying 0≦n≦2).

本發明之(D)成分由於係由SiO3/2 單位之重複而成之聚合物,故可提供低分子成分較少,接著性提高並且無金焊墊污染之組成物。Since the component (D) of the present invention is a polymer formed by repeating SiO 3/2 units, it can provide a composition with fewer low-molecular components, improved adhesion, and no gold pad contamination.

作為以R3 表示之含環氧基之基,舉例為脂環式環氧基或縮水甘油基等之介隔碳原子鍵結於矽原子之基,較佳具有縮水甘油基。更佳為γ-縮水甘油氧基丙基等之以下述式(5)表示之基、β-(3,4-環氧基環己基)乙基。

Figure 02_image039
(式中,s為1~6之整數,虛線表示鍵結鍵)。 R1 舉例為與(A)成分中例示者相同者,較佳為碳原子數1~8之烷基,更佳為甲基。The epoxy group-containing group represented by R 3 is exemplified by an alicyclic epoxy group or a glycidyl group bonded to a silicon atom via a carbon atom, and preferably has a glycidyl group. More preferred are groups represented by the following formula (5) such as γ-glycidoxypropyl, and β-(3,4-epoxycyclohexyl)ethyl.
Figure 02_image039
(In the formula, s is an integer from 1 to 6, and the dashed line represents the bonding bond). Examples of R 1 are the same as those exemplified in the component (A), preferably an alkyl group having 1 to 8 carbon atoms, and more preferably a methyl group.

作為以R4 表示之不含烯基之取代或非取代之一價烴基,若為不具有烯基者,則未特別限定,但較佳為碳原子數1~8之取代或非取代之一價烴基。作為一價烴基,可例示甲基、乙基、丙基、丁基等之烷基,環己基、環戊基等之環烷基,苯基、甲苯基、二甲苯基等之芳基,苄基、苯乙基等之芳烷基,氯甲基、氯丙基、氯環己基等之鹵化烴基等。較好為烷基,特佳為甲基及乙基。The substituted or unsubstituted monovalent hydrocarbon group not containing an alkenyl group represented by R 4 is not particularly limited if it does not have an alkenyl group, but it is preferably one of substituted or unsubstituted carbon atoms having 1 to 8 Valence hydrocarbon group. Examples of monovalent hydrocarbon groups include alkyl groups such as methyl, ethyl, propyl, and butyl, cycloalkyl groups such as cyclohexyl and cyclopentyl, aryl groups such as phenyl, tolyl and xylyl, and benzyl Alkyl groups such as chloromethyl, phenethyl groups, and halogenated hydrocarbon groups such as chloromethyl, chloropropyl, and chlorocyclohexyl groups. Preferred are alkyl groups, and particularly preferred are methyl and ethyl groups.

(D)成分於1大氣壓下於150℃加熱30分鐘後的質量減少,相對於加熱前之質量較佳為5質量%以下。若為該範圍,則可更減低金焊墊污染。 (D)成分較佳為液狀,若為分子量500~10,000之範圍則基於作業性及防止金焊墊污染之觀點較佳。 式(3)中,k及m較佳為滿足0<k≦0.9、0<m≦0.9及k+ m=1之數。若為此等範圍之(D)成分,則(A)、(B)及(C)成分之相溶性優異,所得硬化物成為接著性及晶粒剪切強度優異者。 基於組成物之保存安定性及防止金焊墊污染之觀點,n較佳為0~1之數,更佳為0~0.1之數,又更佳為0。(D) The mass of the component after heating at 150°C for 30 minutes under 1 atmosphere is reduced, and it is preferably 5% by mass or less with respect to the mass before heating. If it is in this range, the contamination of the gold pad can be further reduced. (D) The component is preferably liquid, and if it is in the range of molecular weight 500 to 10,000, it is preferable from the viewpoint of workability and prevention of contamination of the gold pad. In formula (3), k and m are preferably numbers satisfying 0<k≦0.9, 0<m≦0.9, and k+m=1. If the component (D) is in this range, the compatibility of the components (A), (B), and (C) is excellent, and the obtained hardened product has excellent adhesiveness and grain shear strength. From the viewpoint of the preservation stability of the composition and the prevention of contamination of the gold pad, n is preferably a number of 0 to 1, more preferably a number of 0 to 0.1, and even more preferably 0.

(D)成分之量,相對於(A)、(B)及(C)成分之合計100質量份為1~25質量份,較佳為3~10質量份。為未達下限之量的情況,有無法獲得目的之晶粒剪切強度之情況。且為超過上限之量的情況,有組成物中發生成分分離,所得硬化物之強度降低之情況。The amount of (D) component is 1 to 25 parts by mass, preferably 3 to 10 parts by mass relative to 100 parts by mass of the total of (A), (B), and (C) components. If the amount does not reach the lower limit, there are cases where the desired grain shear strength cannot be obtained. In addition, when the amount exceeds the upper limit, components in the composition may separate, and the strength of the resulting hardened product may decrease.

<(E)成分> (E)成分之鉑族金屬系觸媒係用以進行及促進前述(A) ~(C)成分之氫矽烷化反應之成分。<(E) Ingredient> The platinum group metal catalyst of the component (E) is a component used to carry out and promote the hydrosilylation reaction of the aforementioned components (A) to (C).

鉑族金屬系觸媒未特別限定,可舉例為例如鉑、鈀、銠等鉑族金屬;氯化鉑酸、醇改質之氯化鉑酸、氯化鉑酸與烯烴類、乙烯基矽氧烷或乙炔化合物之配位化合物等之鉑化合物;四(三苯膦)鈀、氯三(三苯膦)銠等之鉑族金屬化合物等,但由於與(A)~(C)成分之相溶性良好,幾乎不含氯雜質,故較佳為氯化鉑酸經聚矽氧改質者。 (E)成分可單獨使用一種亦可併用兩種以上。The platinum group metal catalyst is not particularly limited, and examples thereof include platinum group metals such as platinum, palladium, and rhodium; chloroplatinic acid, alcohol-modified chloroplatinic acid, chloroplatinic acid and olefins, vinyl silica Platinum compounds such as coordination compounds of alkanes or acetylene compounds; platinum group metal compounds such as tetrakis(triphenylphosphine)palladium, chlorotris(triphenylphosphine)rhodium, etc., but due to the compatibility with components (A)~(C) It has good solubility and almost no chlorine impurities, so it is preferably chloroplatinic acid modified by silicone. (E) A component may be used individually by 1 type, and may use 2 or more types together.

(E)成分之調配量,相對於(A)~(D)成分之合計質量,以鉑族金屬元素之質量換算為1~500ppm,較佳為3~100ppm,更佳為5~40ppm。(E)成分之調配量未達下限時,所得黏晶用聚矽氧組成物未充分硬化,另一方面,即使調配多於上述範圍之上限,亦無法再提高所得黏晶用聚矽氧組成物之硬化速度。The compounding amount of (E) component is 1 to 500 ppm, preferably 3 to 100 ppm, and more preferably 5 to 40 ppm in terms of the mass of platinum group metal elements relative to the total mass of (A) to (D) components. (E) When the blending amount of component does not reach the lower limit, the obtained polysiloxane composition for crystal bonding is not sufficiently hardened. On the other hand, even if the blending exceeds the upper limit of the above range, the obtained polysiloxane composition for crystal bonding cannot be increased. The hardening speed of things.

<(F)成分> 本發明之黏晶用聚矽氧組成物亦可含有發煙氧化矽作為(F)成分。(F)成分係用以使本發明之黏晶用聚矽氧組成物穩定塗佈而賦予適當觸變性之成分。 基於觸變性及作業性之觀點,(F)成分之BET比表面積較佳為100~400m2 /g之範圍。<(F) Component> The polysiloxane composition for crystal bonding of the present invention may contain fumed silica as the (F) component. The component (F) is a component for stably coating the polysiloxane composition for crystal bonding of the present invention and imparting appropriate thixotropy. From the viewpoint of thixotropy and workability, the BET specific surface area of the component (F) is preferably in the range of 100 to 400 m 2 /g.

基於觸變性及作業性之觀點,(F)成分之調配量,相對於(A)~(E)成分100質量份,較佳以3~10份之範圍添加。 作為(F)成分之具體例,舉例為REOLOSIL DM-30 (TOKUYAMA (股)製,BET比表面積300m2 /g)等。From the viewpoint of thixotropy and workability, the blending amount of the (F) component is preferably added in the range of 3 to 10 parts with respect to 100 parts by mass of the (A) to (E) components. As a specific example of the component (F), REOLOSIL DM-30 (manufactured by TOKUYAMA (stock), BET specific surface area 300 m 2 /g), etc. are exemplified.

<其他成分> 本發明之組成物,除了上述(A)~(F)成分以外,亦可調配以下例示之其他成分。 (反應抑制劑) 本發明之黏晶用聚矽氧組成物中,根據需要可使用對於(D)成分之加成反應觸媒具有硬化抑制效果之習知反應抑制劑(反應控制劑)。作為該反應抑制劑可例示三苯膦等之含磷化合物;三丁基胺或四甲基乙二胺、苯并三唑等之含氮化合物;含硫化合物;乙炔系化合物;過氧化氫化合物;馬來酸衍生物等。<Other ingredients> In addition to the above-mentioned (A) to (F) components, the composition of the present invention may also contain other components exemplified below. (Reaction inhibitor) In the silicone composition for crystal bonding of the present invention, a conventional reaction inhibitor (reaction control agent) having a curing inhibitory effect on the addition reaction catalyst of the component (D) can be used as needed. Examples of the reaction inhibitor include phosphorus-containing compounds such as triphenylphosphine; nitrogen-containing compounds such as tributylamine, tetramethylethylenediamine, benzotriazole, etc.; sulfur-containing compounds; acetylene-based compounds; hydrogen peroxide compounds ; Maleic acid derivatives and so on.

以反應抑制劑進行之硬化抑制效果程度係隨反應抑制劑之化學構造而大為相異,因此反應抑制劑之調配量較佳針對使用之每反應抑制劑調整為最適量。通常較佳相對於(A)成分、(B)成分、(C)成分及(D)成分之合計100質量份為0.001~5質量份。The degree of the hardening inhibitory effect of the reaction inhibitor varies greatly with the chemical structure of the reaction inhibitor. Therefore, the compounding amount of the reaction inhibitor is preferably adjusted to the most appropriate amount for each reaction inhibitor used. Usually, it is preferable that it is 0.001-5 mass parts with respect to the total of 100 mass parts of (A) component, (B) component, (C) component, and (D) component.

(填充劑) 本發明之黏晶用聚矽氧組成物中,除了(F)成分之發煙氧化矽以外,亦可填充結晶性氧化矽、中空填料、倍半矽氧烷等之無機質填充劑;及該等填充劑藉由有機烷氧基矽烷化合物、有機氯矽烷化合物、有機矽氮烷化合物、低分子量矽氧烷化合物等之有機矽化合物進行表面疏水化處理之填充劑等;聚矽氧橡膠粉末;聚矽氧樹脂粉末等。作為本成分,基於作業性之方面,特佳使用可賦予觸變性之填充劑。 該等其他成分可單獨使用一種亦可併用兩種以上。(Filler) In addition to the fuming silica of component (F), the silicone composition for crystal bonding of the present invention can also be filled with inorganic fillers such as crystalline silica, hollow filler, silsesquioxane, etc.; and The filler is used for surface hydrophobization of organosilicon compounds such as organoalkoxysilane compounds, organochlorosilane compounds, organosilazane compounds, low molecular weight silicone compounds, etc.; silicone rubber powder; polysilicone Silicone resin powder, etc. As this ingredient, based on workability, a filler that can impart thixotropy is particularly preferably used. These other components may be used individually by 1 type, and may use 2 or more types together.

又,較佳本發明之黏晶用聚矽氧組成物中之全部R1 中之80莫耳%以上為甲基。又,為使黏晶(轉印法)之作業性良好,本發明之黏晶用聚矽氧組成物之黏度於25℃下較佳為5~100Pa・s,更佳為20~50 Pa・s。In addition, it is preferable that 80 mol% or more of all R 1 in the polysiloxane composition for crystal bonding of the present invention is a methyl group. In addition, in order to improve the workability of die bonding (transfer method), the viscosity of the polysiloxane composition for die bonding of the present invention is preferably 5-100 Pa・s, more preferably 20-50 Pa・ at 25°C s.

[硬化物] 再者,本發明提供黏晶用聚矽氧組成物之硬化物(聚矽氧硬化物)。 本發明之黏晶用聚矽氧組成物之硬化,以習知條件進行即可,作為一例可於100~180℃以10分鐘~5小時之條件硬化。[Hardened material] Furthermore, the present invention provides a cured product (polysilicon cured product) of a polysilicon composition for crystal bonding. The curing of the polysilicone composition for crystal bonding of the present invention can be carried out under conventional conditions. As an example, it can be cured at 100-180°C for 10 minutes to 5 hours.

本發明之黏晶用聚矽氧組成物之硬化物對於基板・LED晶片等之接著力高,尤其作為LED元件等之黏晶所用之黏晶材而有用。如以上,依據本發明之聚矽氧硬化物,可成為對於基板・LED晶片等之接著力高的接著劑。The cured product of the polysilicon oxide composition for die bonding of the present invention has high adhesion to substrates, LED chips, etc., and is particularly useful as a die bonding material for die bonding of LED devices and the like. As described above, the silicone cured product according to the present invention can be an adhesive with high adhesion to substrates, LED chips, and the like.

[光半導體裝置] 進而,本發明提供以前述硬化物將光半導體元件黏晶之光半導體裝置。 作為使用本發明之黏晶用聚矽氧組成物將光半導體元件進行黏晶之方法之一例,舉例為將本發明之黏晶用聚矽氧組成物填充於針筒中,使用佈膠器於封裝等之基體上,以乾燥狀態成為1~100μm之厚度之方式塗佈後,於經塗佈之組成物上配置光半導體元件(例如發光二極體),使該組成物硬化,藉此將光半導體元件黏晶於基體上之方法。又亦可為將組成物載置於橡膠輥盤中,以邊擠壓邊衝壓之方法,於基體上以乾燥狀態成為1~100μm之厚度之方式塗佈後,於經塗佈之組成物上配置光半導體元件,使該組成物硬化,藉此將光半導體元件黏晶於基體上之方法。該組成物之硬化條件如前述即可。如此可成為信賴性高、以本發明之聚矽氧硬化物將光半導體元件黏晶之光半導體裝置。 [實施例][Optical Semiconductor Device] Furthermore, the present invention provides an optical semiconductor device in which an optical semiconductor element is bonded with the aforementioned hardened material. As an example of a method of using the polysilicon oxide composition for die bonding of the present invention to bond an optical semiconductor device, for example, filling the polysilicon oxide composition for die bonding of the present invention in a syringe, and using a glue applicator for packaging After coating the substrate in a dry state to a thickness of 1-100 μm, arrange an optical semiconductor element (such as a light-emitting diode) on the coated composition to harden the composition, thereby hardening the light A method of bonding semiconductor components to a substrate. Alternatively, the composition is placed in a rubber roller tray, and the substrate is coated with a thickness of 1~100μm in a dry state by pressing while pressing, and then on the coated composition A method of disposing the optical semiconductor element to harden the composition, thereby bonding the optical semiconductor element to the substrate. The curing conditions of the composition may be as described above. In this way, it is possible to become an optical semiconductor device with high reliability, and the optical semiconductor device is bonded with the polysilicon cured material of the present invention. [Example]

以下使用實施例及比較例具體說明本發明,但本發明並非限定於該等者。又,分子量係凝膠滲透層析(GPC)之標準聚苯乙烯換算之重量平均分子量。25℃下之黏度係利用旋轉黏度計之測定值。揮發分係於1大氣壓下於150℃加熱30分鐘時的質量減少(質量%)。 又,各矽氧烷單位之簡稱意義如下。 M:(CH3 )3 SiO1/2 MVi :(CH2 =CH)(CH3 )2 SiO1/2 MVi3 :(CH2 =CH)3 SiO1/2 D:(CH3 )2 SiO2/2 DH :H(CH3 )SiO2/2 T:(CH3 )SiO3/2 The following examples and comparative examples are used to specifically illustrate the present invention, but the present invention is not limited to these. In addition, the molecular weight is the weight average molecular weight in terms of standard polystyrene in gel permeation chromatography (GPC). The viscosity at 25°C is measured by a rotary viscometer. The volatile matter is the mass reduction (mass%) when heated at 150°C for 30 minutes under 1 atmosphere. In addition, the meaning of the abbreviation of each silicone unit is as follows. M: (CH 3 ) 3 SiO 1/2 M Vi : (CH 2 =CH)(CH 3 ) 2 SiO 1/2 M Vi3 : (CH 2 =CH) 3 SiO 1/2 D: (CH 3 ) 2 SiO 2/2 D H : H(CH 3 )SiO 2/2 T: (CH 3 )SiO 3/2

T1

Figure 02_image041
T 1 :
Figure 02_image041

T2

Figure 02_image043
T 2 :
Figure 02_image043

T3

Figure 02_image045
T 3 :
Figure 02_image045

T4

Figure 02_image047
T 4 :
Figure 02_image047

T5

Figure 02_image049
Q:SiO4/2 T 5 :
Figure 02_image049
Q: SiO 4/2

[合成例1] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之3,000mL之4頸燒瓶中饋入以[(CH3 O)3 SiO1/2 ]2 [(CH3 O)2 SiO]2 表示之有機聚矽氧烷352.5g、六乙烯基二矽氧烷45.6g、六甲基二矽氧烷182.3g、異丙醇58g,邊攪拌邊滴下甲烷磺酸6.7g。隨後,滴下水90g,於65℃混合2小時,進行反應。於其中添加二甲苯700g、50%氫氧化鉀水溶液10.9g,邊升溫餾除低沸點成分邊於120℃進行5小時反應。添加作為添加劑之甲烷磺酸3.5g,於120℃進行2小時中和處理。冷卻後,進行過濾,獲得組成比為MVi3 0.07 M0.4 Q0.53 表示之三維網狀有機聚矽氧烷(B-1:分子量3,350,於23℃下為固體,相對於固形分之乙烯基量0.287 mol/100g)。[Synthesis Example 1] A 3,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer was charged with [(CH 3 O) 3 SiO 1/2 ] 2 [(CH 3 O) 2 SiO] 2 represents 352.5g of organopolysiloxane, 45.6g of hexavinyldisiloxane, 182.3g of hexamethyldisiloxane, 58g of isopropanol, and 6.7g of methanesulfonic acid is dropped while stirring. Subsequently, 90 g of water was dropped, and the mixture was mixed at 65°C for 2 hours to perform the reaction. 700 g of xylene and 10.9 g of a 50% potassium hydroxide aqueous solution were added thereto, and the reaction was carried out at 120° C. for 5 hours while distilling off low-boiling components at elevated temperature. Add 3.5 g of methanesulfonic acid as an additive, and perform neutralization treatment at 120°C for 2 hours. After cooling, filter to obtain a three-dimensional network organopolysiloxane with a composition ratio of M Vi3 0.07 M 0.4 Q 0.53 (B-1: molecular weight 3,350, solid at 23°C, relative to the amount of vinyl in the solid content 0.287 mol/100g).

[合成例2] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-縮水甘油氧基丙基三甲氧基矽烷234g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T1 0.49 T0.51 之含環氧基之矽氧烷(D-1:分子量2,780,黏度313mPa・s)。揮發分為1.7質量%。[Synthesis Example 2] A 1,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel and a thermometer was charged with 234 g of 3-glycidoxypropyltrimethoxysilane, 136 g of methyltrimethoxysilane, and methanol 37.8 g, a mixed solution of 29 g of 0.04N hydrochloric acid and 70.3 g of methanol was dropped while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was dropped to neutralize, and stirring was performed at 65°C for 2 hours. After cooling and filtering, add 500g of methanol/water (mass ratio 50:50) mixed solution, mix for 20 minutes, let stand for 30 minutes, and repeat the washing operation of separating and removing the methanol solvent layer 3 times to remove low molecules Then, it was concentrated under reduced pressure at 100°C for 1 hour to remove remaining methanol. After cooling to 25°C, filtration was performed to obtain epoxy-containing siloxane (D-1: molecular weight 2,780, viscosity 313 mPa・s) with a structural unit ratio of T 1 0.49 T 0.51. The volatile content is 1.7% by mass.

[合成例3] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入8-縮水甘油氧基辛基三甲氧基矽烷304g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T2 0.47 T0.53 之含環氧基之矽氧烷(D-2:分子量2,570,黏度138mPa・s)。揮發分為1.5質量%。[Synthesis Example 3] A 1,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer was charged with 304 g of 8-glycidoxyoctyl trimethoxysilane, 136 g of methyl trimethoxysilane, and methanol 37.8 g, a mixed solution of 29 g of 0.04N hydrochloric acid and 70.3 g of methanol was dropped while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was dropped to neutralize, and stirring was performed at 65°C for 2 hours. After cooling to 25°C and filtering, 500 g of a methanol/water (mass ratio 50:50) mixed solution was added, mixed for 20 minutes, allowed to stand for 30 minutes, and the washing operation of separating and removing the methanol solvent layer was repeated 3 times, and The low molecular weight was removed, and further concentrated under reduced pressure at 100°C for 1 hour to remove remaining methanol. After cooling to 25°C, filtration was performed to obtain epoxy-containing siloxane (D-2: molecular weight 2,570, viscosity 138mPa・s) with a structural unit ratio of T 2 0.47 T 0.53. The volatile content is 1.5% by mass.

[合成例4] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入2-(3,4-環氧基環己基)三甲氧基矽烷246g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T3 0.57 T0.43 之含環氧基之矽氧烷(D-3:分子量1890,黏度137mPa・s)。揮發分(150℃30分鐘)為4.7質量%。[Synthesis Example 4] A 1,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer was charged with 246 g of 2-(3,4-epoxycyclohexyl)trimethoxysilane and methyltrimethoxy 136 g of silyl silane, 37.8 g of methanol, and a mixed solution of 29 g of 0.04N hydrochloric acid and 70.3 g of methanol was dropped while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was dropped to neutralize, and stirring was performed at 65°C for 2 hours. After cooling to 25°C and filtering, 500 g of a methanol/water (mass ratio 50:50) mixture was added, mixed for 20 minutes, allowed to stand for 30 minutes, and the washing operation of separating and removing the methanol solvent layer was repeated 3 times. The low molecular weight was removed, and further concentrated under reduced pressure at 100°C for 1 hour to remove remaining methanol. After cooling to 25°C, filtration was performed to obtain epoxy-containing siloxane (D-3: molecular weight 1890, viscosity 137 mPa・s) with a structural unit ratio of T 3 0.57 T 0.43. The volatile matter (150°C for 30 minutes) was 4.7% by mass.

[比較合成例1] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-甲基丙烯醯氧基丙基三甲氧基矽烷248g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T4 0.52 T0.48 之有機聚矽氧烷(D-4:分子量2,900,黏度261mPa・s)。揮發分為2.7質量%。[Comparative Synthesis Example 1] A 1,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel, and a thermometer was charged with 248 g of 3-methacryloxypropyltrimethoxysilane and methyltrimethoxysilane 136 g, 37.8 g of methanol, and a mixed solution of 29 g of 0.04N hydrochloric acid and 70.3 g of methanol was dropped while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was dropped to neutralize, and stirring was performed at 65°C for 2 hours. After cooling to 25°C and filtering, 500 g of a methanol/water (mass ratio 50:50) mixture was added, mixed for 20 minutes, allowed to stand for 30 minutes, and the washing operation of separating and removing the methanol solvent layer was repeated 3 times. The low molecular weight was removed, and further concentrated under reduced pressure at 100°C for 1 hour to remove remaining methanol. After cooling to 25°C, filtration was performed to obtain an organopolysiloxane having a unit ratio of T 4 0.52 T 0.48 (D-4: molecular weight 2,900, viscosity 261 mPa・s). The volatile content is 2.7% by mass.

[比較合成例2] 於具備攪拌裝置、冷卻管、滴下漏斗及溫度計之1,000mL之4頸燒瓶中饋入3-丙烯醯氧基丙基三甲氧基矽烷248g、甲基三甲氧基矽烷136g、甲醇37.8g,邊攪拌邊滴下0.04N鹽酸29g及甲醇70.3g之混合液。邊攪拌邊於25℃進行3小時反應後,滴下10%乙酸鈉/甲醇溶液予以中和,於65℃進行2小時攪拌。進而冷卻至25℃後,進行過濾後,添加甲醇/水(質量比50:50)混合液500g,混合20分鐘,靜置30分鐘,分離去除甲醇溶劑層之洗淨操作重複進行3次,而去除低分子,進而於100℃進行1小時減壓濃縮,去除殘存甲醇。冷卻至25℃後,進行過濾,獲得構成單位比T5 0.49 T0.51 之有機聚矽氧烷(D-5:分子量3,350,黏度387mPa・s)。揮發分為0.9質量%。[Comparative Synthesis Example 2] A 1,000 mL 4-necked flask equipped with a stirring device, a cooling tube, a dropping funnel and a thermometer was charged with 248 g of 3-propenoxypropyltrimethoxysilane, 136g of methyltrimethoxysilane, With 37.8 g of methanol, a mixed solution of 29 g of 0.04N hydrochloric acid and 70.3 g of methanol was dropped while stirring. After reacting at 25°C for 3 hours while stirring, a 10% sodium acetate/methanol solution was dropped to neutralize, and stirring was performed at 65°C for 2 hours. After cooling to 25°C and filtering, 500 g of a methanol/water (mass ratio 50:50) mixture was added, mixed for 20 minutes, allowed to stand for 30 minutes, and the washing operation of separating and removing the methanol solvent layer was repeated 3 times. The low molecular weight was removed, and further concentrated under reduced pressure at 100°C for 1 hour to remove remaining methanol. After cooling to 25°C, filtration was performed to obtain an organopolysiloxane with a unit ratio of T 5 0.49 T 0.51 (D-5: molecular weight 3,350, viscosity 387 mPa・s). The volatile content is 0.9% by mass.

[合成例5] 將六氯化鉑酸與1,3-二乙烯基四甲基二矽氧烷之反應產物,以鉑含量成為0.004質量%之方式,以MVi 2 D40 表示之直鏈狀二甲基聚矽氧烷(黏度60 mPa・s)稀釋,調製鉑觸媒。[Synthesis Example 5] The reaction product of hexachloroplatinic acid and 1,3-divinyltetramethyldisiloxane is a linear chain represented by M Vi 2 D 40 so that the platinum content becomes 0.004% by mass Dimethyl polysiloxane (viscosity 60 mPa・s) is diluted to prepare platinum catalyst.

[實施例1~4、比較例1~7] 以表1所示之調配量混合下述各成分,調製黏晶用聚矽氧樹脂組成物。 又,表1中之各成分的數值表示質量份。[Si-H]/[Si-Vi]值表示(C)成分中之鍵結於矽原子之氫原子(Si-H)相對於(A)成分及(B)成分中之鍵結於矽原子之全部烯基之合計數的比(莫耳比)。[Examples 1 to 4, Comparative Examples 1 to 7] The following components were mixed in the blending amounts shown in Table 1 to prepare a silicone resin composition for crystal bonding. In addition, the numerical value of each component in Table 1 represents parts by mass. The value of [Si-H]/[Si-Vi] indicates that the hydrogen atom (Si-H) in the component (C) bonded to the silicon atom is relative to the component (A) and the component (B) bonded to the silicon atom The ratio of the total number of all alkenyl groups (molar ratio).

(A)成分: (A-1)以構成單位比MVi 0.47 T0.53 表示之有機聚矽氧烷(於25℃之黏度17mPa・s) (A-2)以平均構造為MVi 2 D15 表示之直鏈狀二甲基聚矽氧烷(於25℃之黏度8.8mPa・s) (A-3)以平均構造為MVi 2 D204 表示之二甲基聚矽氧烷(於25℃之黏度600mPa・s)(A) Component: (A-1) Organopolysiloxane expressed by the component ratio M Vi 0.47 T 0.53 (Viscosity at 25°C 17mPa・s) (A-2) The average structure is M Vi 2 D 15 The linear dimethylpolysiloxane expressed (viscosity at 25℃ is 8.8mPa・s) (A-3) has an average structure of M Vi 2 D 204 expressed dimethylpolysiloxane (at 25℃ The viscosity is 600mPa・s)

(B)成分: (B-1)合成例1所得之三維網狀有機聚矽氧烷 (B-2)以平均構造為MVi 1.2 M7.4 Q10 表示之於23℃為固體之乙烯基量為0.085mol/100g之三維網狀有機聚矽氧烷(B) Component: (B-1) The three-dimensional network organopolysiloxane (B-2) obtained in Synthesis Example 1 has an average structure of M Vi 1.2 M 7.4 Q 10 represents the amount of vinyl that is solid at 23°C 0.085mol/100g three-dimensional network organopolysiloxane

(C)成分:以平均構造為M2 D14.5 DH 38 表示之有機氫聚矽氧烷(揮發分量為0.2質量%)(C) Component: Organohydrogen polysiloxane represented by an average structure of M 2 D 14.5 D H 38 (the volatile content is 0.2% by mass)

(D)成分: (D-1)合成例2所得之有機聚矽氧烷(揮發分量為1.7質量%) (D-2)合成例3所得之有機聚矽氧烷(揮發分量為1.5質量%) (D-3)合成例4所得之有機聚矽氧烷(揮發分量為4.7質量%) (D-4)比較合成例1所得之有機聚矽氧烷(揮發分量為2.7質量%) (D-5)比較合成例2所得之有機聚矽氧烷(揮發分量為0.9質量%) (D-6)3-縮水甘油氧基丙基三甲氧基矽烷(揮發分量為97質量%)(D) Ingredients: (D-1) Organopolysiloxane obtained in Synthesis Example 2 (The volatile content is 1.7% by mass) (D-2) Organopolysiloxane obtained in Synthesis Example 3 (the volatile content is 1.5% by mass) (D-3) Organopolysiloxane obtained in Synthesis Example 4 (The volatile content is 4.7% by mass) (D-4) Organopolysiloxane obtained in Comparative Synthesis Example 1 (the volatile content is 2.7% by mass) (D-5) The organopolysiloxane obtained in Comparative Synthesis Example 2 (the volatile content is 0.9% by mass) (D-6)3-Glycidoxypropyltrimethoxysilane (97% by mass volatile)

(D)成分之揮發分係將各(D)成分以1.5g逐次塗佈於Φ60mm鋁盤上,以150℃烘箱於開放系中加熱30分鐘,算出加熱後減少的質量比例者。(D) The volatile component of the component is the result of applying 1.5g of each component (D) on a Φ60mm aluminum pan successively, heating it in an open system at 150°C for 30 minutes, and calculating the mass reduction after heating.

(E)成分:合成例5所得之鉑觸媒 (F)成分:發煙氧化矽[REOLOSIL DM30(TOKUYAMA製,BET比表面積300m2 /g)] (G)反應抑制劑:1-乙炔基環己醇(E) Component: The platinum catalyst obtained in Synthesis Example 5 (F) Component: Fuming silica [REOLOSIL DM30 (manufactured by TOKUYAMA, BET specific surface area 300m 2 /g)] (G) Reaction inhibitor: 1-ethynyl ring Hexanol

針對實施例1~4、比較例1~7所得之黏晶用聚矽氧組成物進行下述評價,結果示於表1。 [硬度] 將前述組成物以成為2mm厚之方式流入模具中,於150℃×4小時之條件硬化。硬化物之D型硬度依據 JIS K 6253-3:2012予以測定。The following evaluations were performed on the polysiloxane compositions for crystal bonding obtained in Examples 1 to 4 and Comparative Examples 1 to 7. The results are shown in Table 1. [hardness] The aforementioned composition was poured into a mold so as to be 2 mm thick, and cured under the conditions of 150° C.×4 hours. D type hardness basis of hardened material Measured in JIS K 6253-3:2012.

[晶粒剪切強度] 前述組成物使用黏晶機(ASM公司製,AD-830),對於SMD5730封裝(I-CHIUN PRECSION INDUSTRY CO.製,樹脂部:聚苯二甲醯胺)之鍍銀電極部,藉由衝壓進行定量轉印。衝壓時產生拉絲,樹脂無法轉印之情況記為×,無問題而可轉印之情況記為○。進而,於其上搭載光半導體元件(SemiLEDs公司製,EV-B35A,35mil)。所製作之封裝以150℃烘箱加熱4小時,使組成物硬化後,使用黏合測試機(Dage公司製,4000系列)進行晶粒剪切強度之測定。[Grain Shear Strength] The aforementioned composition uses a die bonder (manufactured by ASM, AD-830), and the silver-plated electrode part of the SMD5730 package (manufactured by I-CHIUN PRECSION INDUSTRY CO., resin part: polyxylylenedimethamide) is processed by pressing Quantitative transfer. Wire drawing occurred during punching and the resin could not be transferred was marked as ×, and the case where there was no problem but could be transferred was marked as ○. Furthermore, an optical semiconductor element (manufactured by SemiLEDs, EV-B35A, 35mil) was mounted on it. The manufactured package was heated in an oven at 150°C for 4 hours to harden the composition, and then the grain shear strength was measured using a bonding tester (manufactured by Dage Corporation, 4000 series).

[金焊墊污染] 於於Φ105mm鋁盤上設置搭載有光半導體元件(SemiLEDs公司製,EV-B35A,35mil)之PKG,於PKG周圍塗佈2g樹脂。隨後,以150℃×4小時之條件硬化後,以顯微鏡觀察半導體元件之金焊墊,金焊墊上附著有矽氧烷成分之情況記為×,未附著之情況記為○。[Gold pad contamination] A PKG equipped with an optical semiconductor element (EV-B35A, 35mil, manufactured by SemiLEDs) is installed on a Φ105mm aluminum plate, and 2g of resin is coated around the PKG. Then, after curing at 150°C for 4 hours, observe the gold pads of the semiconductor device under a microscope. The adhesion of silicone components on the gold pads is recorded as ×, and the absence of adhesion is recorded as ○.

Figure 02_image051
Figure 02_image051

如表1所示,實施例1~4於衝壓時均無缺陷,為硬化物之硬度・晶粒剪切強度優異且無金焊墊污染之結果,可知為作為黏晶材優異者。又,實施例1之金焊墊污染試驗之結果示於圖1。As shown in Table 1, all Examples 1 to 4 had no defects at the time of punching, and were the result of the hardness of the hardened product, the excellent grain shear strength and no gold pad contamination, and it can be seen that they were excellent as a sticky material. In addition, the results of the gold pad contamination test of Example 1 are shown in FIG. 1.

另一方面,比較例1不含(D)成分,晶粒強度變不充分。比較例2由於(D)成分中不含環氧基,故成為晶粒剪切強度較差之結果。 比較例4係(A)成分之黏度高,為無法衝壓且作業性差之黏晶材,比較例5係(D)成分較少且晶粒剪切強度較低者。比較例6係(D)成分過多,故硬化物之硬化為充分但組成物發生分離,作為黏晶材時無保存性而成為信賴性差的結果。比較例7中雖藉由包含環氧基之矽烷偶合劑而見到晶粒剪切強度稍微提高,但如圖2所示發生金焊墊污染而成為信賴性差的結果。On the other hand, Comparative Example 1 does not contain the (D) component, and the crystal grain strength becomes insufficient. In Comparative Example 2, since the (D) component does not contain an epoxy group, the result is that the grain shear strength is inferior. The comparative example 4 series (A) component has a high viscosity and is a sticky material which cannot be punched and has poor workability, and the comparative example 5 series (D) has a low component and low grain shear strength. In Comparative Example 6, because the component (D) was too much, the hardening of the hardened product was sufficient, but the composition was separated, and when it was used as a viscous material, it had no storage properties and resulted in poor reliability. In Comparative Example 7, although the crystal grain shear strength was slightly improved by the epoxy-containing silane coupling agent, as shown in FIG. 2, contamination of the gold pad occurred, resulting in poor reliability.

如以上,本發明之黏晶用聚矽氧組成物可賦予硬度及晶粒剪切強度優異之聚矽氧硬化物,且可有效抑制硬化時之金焊墊污染者,作為光半導體元件等之黏晶中使用之黏晶材特別有用。尤其,因該優點,於黏晶步驟後進行之線黏合步驟中,亦難以發生晶片剝離或無法黏合之缺點,故以該聚矽氧硬化物將光半導體元件黏晶之光半導體裝置,信賴性提高,裝置之生產性亦提高。因此,本發明之黏晶用聚矽氧組成物及其硬化物於光半導體裝置之技術領域中利用價值高。As described above, the polysiloxane composition for die bonding of the present invention can impart a cured polysiloxane with excellent hardness and grain shear strength, and can effectively inhibit the contamination of gold pads during hardening. It can be used as an optical semiconductor device, etc. The die-bonding materials used in die-bonding are particularly useful. In particular, due to this advantage, it is difficult for the wafer to peel off or fail to be bonded in the wire bonding step after the die bonding step. Therefore, the optical semiconductor device in which the optical semiconductor element is bonded by the polysiloxy hardened material is reliable. Improve the productivity of the device. Therefore, the polysilicon oxide composition for die bonding and its cured product of the present invention have high utility value in the technical field of optical semiconductor devices.

又,本發明並未限定於上述實施形態。上述實施形態為例示,凡具有與本發明之申請專利範圍中記載之技術思想實質上相同構成,發揮同樣作用效果者,任一者均包含於本發明之技術範圍內。In addition, the present invention is not limited to the above-mentioned embodiment. The above-mentioned embodiment is an example, and any one having substantially the same structure as the technical idea described in the scope of the patent application of the present invention and exerting the same effect is included in the technical scope of the present invention.

[圖1]係實施例1之金焊墊污染試驗後之外觀照片。 [圖2]係比較例7之金焊墊污染試驗後之外觀照片。[Figure 1] is a photograph of the appearance of the gold pad contamination test of Example 1. [Figure 2] is a photograph of the appearance of the gold pad contamination test of Comparative Example 7.

Claims (10)

一種黏晶用聚矽氧組成物,其特徵係含有下述(A)成分~(E)成分, (A)1分子中含有2個以上之烯基、於25℃下之黏度為100mPa・s以下之有機聚矽氧烷, (B)以下述式(1)表示,於23℃下為蠟狀或固體之三維網狀有機聚矽氧烷:相對於(A)成分及(B)成分之合計100質量份,為70~95質量份,
Figure 03_image001
(式中,R1 分別為相同或不同,不含烯基之取代或非取代之一價烴基,R2 分別為相同或不同之烯基,a、b、c、d、e、f、g及h分別為滿足a≧0、b≧0、c≧0、d≧0、e≧0、f≧0、g≧0及h≧0之數,但係滿足b+c>0,f+g+h>0且a+b+c+d+e+f+g+h=1之數) (C)以下述平均組成式(2)表示,1分子中具有至少2個鍵結於矽原子之氫原子之有機氫聚矽氧烷:相對於(A)成分及(B)成分中之全部鍵結於矽原子之烯基之合計數,(C)成分中之鍵結於矽原子之氫原子之數成為0.5~5.0倍之量,
Figure 03_image003
(式中,R1 與前述相同,i及j係滿足0.7≦i≦2.1、0.001≦j≦1.0且0.8≦i+j≦3.0之數) (D)以下述式(3)表示之含有環氧基之聚矽氧烷:相對於(A)成分、(B)成分及(C)成分之合計100質量份為1~25質量份,
Figure 03_image005
(式中,R1 與前述相同,R3 分別為相同或不同之含環氧基之基,R4 分別相同或不同為不含烯基之取代或非取代之一價烴基,k及m分別為滿足k>0、m≧0及k+m=1之數,n係滿足0≦n≦2之數), (E)鉑族金屬系觸媒:相對於(A)成分、(B)成分、(C)成分及(D)成分之合計質量,以鉑屬金屬元素之質量換算為1~500ppm。
A polysiloxane composition for crystal bonding, which is characterized by containing the following components (A) ~ (E), (A) contains 2 or more alkenyl groups per molecule, and has a viscosity of 100mPa・s at 25°C The following organopolysiloxanes, (B) are represented by the following formula (1), which are waxy or solid three-dimensional network organopolysiloxanes at 23°C: relative to the ratio of (A) component and (B) component A total of 100 parts by mass, 70 to 95 parts by mass,
Figure 03_image001
(In the formula, R 1 are the same or different, substituted or unsubstituted monovalent hydrocarbon group without alkenyl, R 2 are the same or different alkenyl, a, b, c, d, e, f, g And h are the numbers satisfying a≧0, b≧0, c≧0, d≧0, e≧0, f≧0, g≧0, and h≧0, but satisfying b+c>0, f+ g+h>0 and a+b+c+d+e+f+g+h=1) (C) is represented by the following average composition formula (2), and there are at least 2 bonds in one molecule to silicon The organohydrogen polysiloxane of the hydrogen atom of the atom: relative to the total number of the alkenyl groups in the (A) component and the (B) component bonded to the silicon atom, the (C) component is bonded to the silicon atom The number of hydrogen atoms becomes 0.5~5.0 times the amount,
Figure 03_image003
(In the formula, R 1 is the same as the above, i and j are the numbers satisfying 0.7≦i≦2.1, 0.001≦j≦1.0, and 0.8≦i+j≦3.0) (D) Containing ring represented by the following formula (3) Polysiloxane of oxy group: 1-25 parts by mass relative to 100 parts by mass of the total of (A) component, (B) component and (C) component,
Figure 03_image005
(In the formula, R 1 is the same as above, R 3 is the same or different epoxy-containing group, R 4 is the same or different, is a substituted or unsubstituted monovalent hydrocarbon group without alkenyl, k and m are respectively In order to satisfy the number of k>0, m≧0 and k+m=1, the n system satisfies the number of 0≦n≦2), (E) platinum group metal catalyst: relative to (A) component, (B) The total mass of components, (C) components, and (D) components is 1 to 500 ppm in terms of the mass of platinum metal elements.
如請求項1之黏晶用聚矽氧組成物,其中前述(A)成分係以下述式(4)表示之有機聚矽氧烷,
Figure 03_image007
(式中,R1 及R2 與前述相同,o、p、q、r分別為滿足q≧0、r≧0、o≧0、p≧0之數,但係滿足q+r>0、r+o>0、o+p>0且o+p+q+r=1之數)。
Such as the polysiloxane composition for crystal bonding of claim 1, wherein the aforementioned component (A) is an organopolysiloxane represented by the following formula (4),
Figure 03_image007
(In the formula, R 1 and R 2 are the same as above, o, p, q, r are the numbers satisfying q≧0, r≧0, o≧0, p≧0, but satisfying q+r>0, r+o>0, o+p>0 and o+p+q+r=1).
如請求項1之黏晶用聚矽氧組成物,其中前述式(1)中,b>0且h>0。For example, the polysilicon oxide composition for crystal bonding of claim 1, wherein in the aforementioned formula (1), b>0 and h>0. 如請求項1至3中任一項之黏晶用聚矽氧組成物,其中前述(C)成分係於1大氣壓下於150℃加熱30分鐘時的質量減少為1質量%以下者。The polysiloxane composition for crystal bonding according to any one of claims 1 to 3, wherein the aforementioned component (C) has a mass reduction of 1% by mass or less when heated at 150°C for 30 minutes under 1 atmosphere. 如請求項1至3中任一項之黏晶用聚矽氧組成物,其中前述(D)成分係於1大氣壓下於150℃加熱30分鐘時的質量減少為5質量%以下者。The polysiloxane composition for crystal bonding according to any one of claims 1 to 3, wherein the aforementioned component (D) has a mass reduction of 5 mass% or less when heated at 150°C for 30 minutes under 1 atmosphere. 如請求項1至3中任一項之黏晶用聚矽氧組成物,其中前述(D)成分中,R3 係以下述式(5)表示之基,
Figure 03_image009
(式中,s為1~6之整數,虛線表示鍵結鍵)。
The polysiloxane composition for crystal bonding according to any one of claims 1 to 3, wherein in the aforementioned component (D), R 3 is a base represented by the following formula (5),
Figure 03_image009
(In the formula, s is an integer from 1 to 6, and the dashed line represents the bonding bond).
如請求項1至3中任一項之黏晶用聚矽氧組成物,其中前述組成物中之全部R1 中之80莫耳%以上為甲基。The polysiloxane composition for crystal bonding according to any one of claims 1 to 3, wherein more than 80 mol% of all R 1 in the aforementioned composition are methyl groups. 如請求項1至3中任一項之黏晶用聚矽氧組成物,其中進而含有(F)BET比表面積為100~400m2 /g之發煙氧化矽。The polysilicon oxide composition for crystal bonding according to any one of claims 1 to 3, which further contains (F) fumed silica with a BET specific surface area of 100-400 m 2 /g. 一種聚矽氧硬化物,其特徵係如請求項1至8中任一項之黏晶用聚矽氧組成物的硬化物。A cured polysilicone characterized by a cured polysilicone composition for crystal bonding according to any one of claims 1 to 8. 一種光半導體裝置,其特徵係以如請求項9之聚矽氧硬化物將光半導體元件予以黏晶者。An optical semiconductor device characterized in that an optical semiconductor element is bonded with a polysilicon cured material as in Claim 9.
TW109116655A 2019-05-21 2020-05-20 Silicone composition for die bonding, cured product thereof and optical semiconductor device TW202111072A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019095074A JP7041094B6 (en) 2019-05-21 2019-05-21 Silicone composition for die bonding, cured product thereof, and optical semiconductor device
JP2019-095074 2019-05-21

Publications (1)

Publication Number Publication Date
TW202111072A true TW202111072A (en) 2021-03-16

Family

ID=73441812

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109116655A TW202111072A (en) 2019-05-21 2020-05-20 Silicone composition for die bonding, cured product thereof and optical semiconductor device

Country Status (4)

Country Link
JP (1) JP7041094B6 (en)
KR (1) KR20200134162A (en)
CN (1) CN111978736A (en)
TW (1) TW202111072A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022138341A1 (en) * 2020-12-25 2022-06-30
CN117089318B (en) * 2023-07-25 2024-05-10 北京康美特科技股份有限公司 Organic silicon die-bonding adhesive and preparation method and application thereof
CN117165236B (en) * 2023-10-30 2024-04-12 空净视界智能科技有限公司 Insulating die bond adhesive for LED and preparation method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0620242B1 (en) * 1993-04-15 1998-08-19 Dow Corning Toray Silicone Company, Limited Epoxy group-containing silicone resin and compositions based thereon
JP2004346144A (en) * 2003-05-21 2004-12-09 Nippon Kayaku Co Ltd Silicon compound having epoxy group and thermosetting resin composition
JP4648099B2 (en) 2005-06-07 2011-03-09 信越化学工業株式会社 Silicone resin composition for die bonding
US8299198B2 (en) * 2006-07-21 2012-10-30 Kaneka Corporation Polysiloxane composition, molded body obtained from the same, and optodevice member
JP2008179811A (en) * 2006-12-28 2008-08-07 Asahi Kasei Corp Siloxane derivative and its cured material
JP2008202008A (en) * 2007-02-22 2008-09-04 Nagase Chemtex Corp Sealing resin composition for optical element
JP2010285571A (en) 2009-06-15 2010-12-24 Shin-Etsu Chemical Co Ltd Silicone resin composition for die bonding
KR101169032B1 (en) * 2010-01-19 2012-07-26 (주)에버텍엔터프라이즈 Silicone composition for die bonding of the face-down type semiconductor packages
JP5505991B2 (en) * 2010-04-30 2014-05-28 信越化学工業株式会社 High adhesion silicone resin composition and optical semiconductor device using the composition
JP5766883B2 (en) * 2013-07-08 2015-08-19 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Adhesiveness imparting agent, adhesive polyorganosiloxane composition, and optical semiconductor device
JP6258048B2 (en) * 2014-01-28 2018-01-10 信越化学工業株式会社 Organically modified silicone resin composition
CN105778100B (en) * 2014-12-25 2019-06-25 比亚迪股份有限公司 A kind of organic silicon rigidity-increasing stick and preparation method thereof and a kind of addition-type silicon rubber composition
JP6277974B2 (en) * 2015-02-26 2018-02-14 信越化学工業株式会社 Addition-curable silicone resin composition and die attach material for optical semiconductor devices
JP6702224B2 (en) * 2017-02-17 2020-05-27 信越化学工業株式会社 Addition curable silicone resin composition and die attach material for optical semiconductor device
JP6654593B2 (en) * 2017-03-15 2020-02-26 信越化学工業株式会社 Silicone resin composition for die bonding and cured product
CN107118350A (en) * 2017-04-21 2017-09-01 华南理工大学 A kind of epoxy and phenyl silicones and preparation method and application
TWI762649B (en) * 2017-06-26 2022-05-01 日商杜邦東麗特殊材料股份有限公司 Curable silicon composition for die bonding
CN109762167A (en) * 2018-12-14 2019-05-17 中国科学院深圳先进技术研究院 A kind of LED small-size chips heat conductive insulating die bond material and preparation method thereof

Also Published As

Publication number Publication date
CN111978736A (en) 2020-11-24
KR20200134162A (en) 2020-12-01
JP2020189908A (en) 2020-11-26
JP7041094B2 (en) 2022-03-23
JP7041094B6 (en) 2023-12-18

Similar Documents

Publication Publication Date Title
TWI679244B (en) Addition-curable silicone resin composition, method for producing the same, and optical semiconductor device
TWI734899B (en) Silicone resin composition and hardened material for die bonding
TW202111072A (en) Silicone composition for die bonding, cured product thereof and optical semiconductor device
JP2006299099A (en) Resin composition for sealing optical semiconductor element and optical semiconductor element
JP2011252175A (en) Silicone composition, method for the preparation thereof and silicone elastomer
TWI798283B (en) Addition hardening polysiloxane composition, cured product, optical element
JP2011086844A (en) Die bonding material for light emitting diode
TWI831858B (en) Addition curable polysilicone resin composition, its cured product, and optical semiconductor device
JP2007258317A (en) Process for manufacturing semiconductor device
TWI830872B (en) Silicone resin compositions, hardened materials and optical semiconductor devices for chip bonding
TW202115188A (en) Addition-curable polysiloxane composition and optical element which has sulfidation resistance, and provides a cured product with high tensile strength and excellent crack resistance
TWI798500B (en) Addition-curing polysiloxane resin composition, cured product thereof, and optical semiconductor device
JP7270574B2 (en) Addition-curable silicone composition, cured silicone product, and optical element
TWI834881B (en) Addition-hardening polysilicone resin composition, method of manufacturing the composition, and optical semiconductor device
TW202104377A (en) Silicone resin composition for die-bonding, cured product and light-emitting diode element
CN113493677B (en) Organic silicon composition for die bonding, cured product thereof, and optical semiconductor device
TW202104378A (en) Silicone resin composition for die-bonding cured product light-emitting diode element and method for producing said composition
TW202043419A (en) Organic modified silicone resin composition for die-bonding, cured product thereof, and optical semiconductor element