CN109762167A - A kind of thermal conductive insulating solid crystal material for LED small size chip and preparation method thereof - Google Patents
A kind of thermal conductive insulating solid crystal material for LED small size chip and preparation method thereof Download PDFInfo
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- CN109762167A CN109762167A CN201811531518.2A CN201811531518A CN109762167A CN 109762167 A CN109762167 A CN 109762167A CN 201811531518 A CN201811531518 A CN 201811531518A CN 109762167 A CN109762167 A CN 109762167A
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- Prior art keywords
- thermally conductive
- crystal material
- conductive insulating
- solid crystal
- die bond
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- Silicon Polymers (AREA)
Abstract
A kind of LED small-size chips heat conductive insulating die bond material and preparation method thereof of the present invention is to be formed by materials such as organic siliconresin, modified hybrid resin, crosslinking agent, promotor and heat fillings through vacuum defoamation is mixed.The present invention is by synthetic silicone resin, and by it in conjunction with the modified resin of optical grade hexa-member heterocycle triazine structure, solves the problems, such as that the organosilicon die bond strength of materials is low and bad adhesion.In addition, it is low for currently used die bond material thermal conductivity, it is unable to satisfy the die bond radiating requirements problem of high-power small size LED chip, by introducing the modified high thermal conductivity inorganic particle in surface, the New insulated die bond material for obtaining a kind of high thermal conductivity and strong cohesive force can be widely used for small size LED chip bonding.
Description
Technical field
The invention belongs to new material technology fields, and in particular to arrive a kind of small size LED chip heat conductive insulating die bond material
Material and preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode), abbreviation LED are that one kind can convert electrical energy into the half of luminous energy
Conductor device belongs to solid state light emitter., light efficiency conversion height low with operating voltage, fast response time, long service life, safety can
Lean on, energy conservation and environmental protection the features such as, be widely used in the fields such as various instructions, display, decoration, backlight, automobile, illumination.With skill
The continuous promotion of art, LED component is just smaller and smaller towards size, and the higher and higher direction of performance is developed.CREE is just mentioned within 2014
The theory of " great change of high density grade LED encapsulation technology " out, high density grade LED packaging will be so that realize that volume is smaller, shines
Bright performance is higher, quality of lighting more preferably, system cost is lower, Lighting Design is more flexible, illuminating product is richer innovative new
Generation LED illumination solution is possibly realized.It is especially especially prominent in LED display field.
Pursuit with people to display effect, LED display are also constantly developing towards the highly dense direction of high definition.In order to
Better appreciation effect is obtained, people require from simple full-color to true to nature, reduction real colour the picture of LED display
Property, while also to realize that clearly image is shown in smaller LED screen.Small space distance LED display screen comes into being.And tradition
Unlike LED display, small spacing LED is as a kind of high density display screen, as spacing constantly tends to minimize, every square
The lamp bead quantity of meter Suo Xu can steeply rise, and lamp bead density becomes higher and higher, also proposed serious test to its reliability,
Requirement to encapsulation technology is also more harsh, especially die bond material and die bond technique.
Current LED die bond material mainly has two kinds of systems of epoxy resin and organosilicon.For epoxy resin its with excellent
Good caking property, electrical insulating property, leakproofness and dielectric properties, and cost is relatively low, flexible and changeable, the easily molded production efficiency of formula
The high mainstay material as LED die bond.But as the brightness of LED and power are continuously improved and the development of white light LEDs,
The die bond material of LED is also put forward higher requirements, such as more high refractive index, high transparency, high-termal conductivity, resistance to ultraviolet and hot
Aging ability and low thermal expansion coefficient, ion concentration and stress etc..And hygroscopicity, easy to aging, heat-resisting existing for epoxy itself
Property poor, high temperature and short wavelength light shine under it is easy to change, cured internal stress is big the defects of be exposed, largely effect on and shorten LED device
The service life of part.Uvioresistant photosensitiveness, thermal stability needed for organosilicon then has high light large power LED, weatherability and absolutely
Edge etc. becomes white light/power-type LED die bond material ideal chose.However, with the reduction of chip size, it is mechanical
Intensity is low, bad adhesion organosilicon die bond material has been unable to satisfy the die bond demand of high-power small size LED chip.Therefore it opens
Send out novel high-strength a kind of, high-adhesion, high reliability die bond material it is very necessary and urgent, for China's power-type LED device
The development of part has a very important significance with large-scale production.
Summary of the invention
The present invention for current organosilicon die bond material there are intensity low, bad adhesion and thermal conductivity it is low be unable to satisfy it is big
The die bond radiating requirements problem of power small size LED chip passes through autonomous Design synthesis having containing unsaturated bond and epoxy group
Machine silicone resin, and by it in conjunction with the modified resin of optical grade hexa-member heterocycle triazine structure, it is strong to solve organosilicon die bond material
The problem of spending low and bad adhesion.In addition, being further introduced into the modified high thermal conductivity inorganic powder in surface on the basis of above-mentioned resin
Body, to obtain a kind of insulation crystal-bonding material of high thermal conductivity high-adhesion, the die bond that can satisfy high-power small size LED chip dissipates
Heat request, and a kind of idea and method is provided for the exploitation of such material.
One aspect of the invention provides a kind of organic siliconresin, is the polymerizable organosilicon containing vinyl, epoxy group
Object, general structure are as follows: (ASiO1.5)x(BSiO0.5)y(CSiO0.5)z(SiO2) m, wherein A, B and C independently selected from
CH3-、C6H5-、CH2=CH-, CH2Group in=CH (Me) COO-, H-, epoxy group, x+y+z+m=1.
In the inventive solutions, the organic siliconresin is prepared by the following method: alkoxy silane is molten
Solution in organic solvent, is added drop-wise in water and condensation is hydrolyzed, and removes sour water layer after completion of the reaction, then be washed to neutrality.Specially
The alkoxy silane for weighing stoichiometry first is poured into the flask with cooling, stirring and heating device；Then one
Determine that aqueous acid is slowly added dropwise at temperature, is added dropwise, the reaction was continued；Reactant is moved into separatory funnel again, is stood, layering,
Remove water layer；It is washed to neutrality again, is evaporated under reduced pressure, obtains colorless and transparent organic siliconresin.
Above-mentioned alkoxy silane is selected from trimethylmethoxysilane, trimethylethoxysilane, vinyl-dimethyl base methoxy
Base silane, vinyl dimethylethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, dimethylformamide dimethyl oxygen
Base silane, dimethyl diethoxysilane, phenyltrimethoxysila,e, phenyl triethoxysilane, aminomethyl phenyl dimethoxy
Silane, aminomethyl phenyl diethoxy silane, dimethoxydiphenylsilane, diphenyl diethoxy silane, ethyl trimethoxy
Silane, ethyl front three Ethoxysilane, triphenyl methoxy siloxanes, triphenyl ethoxy siloxanes, pheiiyldimetliyl methoxyl group silicon
Alkane, phenyldimethylethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyl methyl diformazan
Oxysilane, vinyl methyl diethoxy silane, tetraethoxysilane, γ-(the third oxygen of 2,3- epoxy) propyl trimethoxy silicon
Alkane, γ-(the third oxygen of 2,3- epoxy) propyl-triethoxysilicane, γ-[the third oxygen of (2,3)-epoxy] hydroxypropyl methyl dimethoxysilane,
γ-[the third oxygen of (2,3)-epoxy] hydroxypropyl methyl diethoxy silane, β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane,
1 kind or more in γ-methacryloxypropyl trimethoxy silane, 3- glycidyl ether oxygen propyl trimethoxy silicane etc.
Kind.
Another aspect of the invention provides the preparation method of organic siliconresin, and alkoxy silane is dissolved in organic solvent
In, it is added drop-wise in water and condensation is hydrolyzed, remove sour water layer after completion of the reaction, then be washed to neutrality.Chemistry is specially weighed first
The alkoxy silane of metering is poured into the flask with cooling, stirring and heating device；Then at a certain temperature slowly
Aqueous acid is added dropwise, is added dropwise, the reaction was continued；Reactant is moved into separatory funnel again, stands, layering, removes water layer；It washes again
To neutrality, vacuum distillation obtains colorless and transparent organic siliconresin.
In the inventive solutions, acidic aqueous solution is aqueous solution of the pH value less than 6, and preferably pH value is less than 3
The aqueous acetic acid that weakly acidic aqueous solution, more preferably pH value are 2.
Another aspect of the present invention provides organic siliconresin and prepares purposes in heat conductive insulating die bond material.
Another aspect of the present invention provides: a kind of heat conductive insulating die bond material: include following ingredient in parts by weight:
100 parts of organic siliconresin；
Modified 5~50 parts of hybrid resin；
5~80 parts of crosslinking agent；
0.01~5 part of promotor；
1~10 part of coupling agent；
Conduction powder；50~700 parts.
In the inventive solutions, the heat conductive insulating die bond material further includes functional aid, the function
Energy property auxiliary agent is selected from one of polymerization inhibitor, defoaming agent, thixotropic agent, antioxidant, uvioresistant light agent or a variety of.
Above-mentioned organic siliconresin is the organosilicon polymer containing vinyl, epoxy group, and general structure is as follows:
(ASiO1.5)x(BSiO0.5)y(CSiO0.5)z(SiO2) m, wherein A, B and C are independently selected from CH3-、C6H5-、CH2=CH-, CH2
Any one in=CH (Me) COO-, H-, epoxy group or several groups, x+y+z+m=1.
Above-mentioned organic siliconresin is prepared by the alkoxy silane cohydrolysis containing different functional groups, and method is by alkoxy
Silane dissolves in organic solvent, is added drop-wise in water and condensation is hydrolyzed, and removes sour water layer after completion of the reaction, then be washed to neutrality.
The alkoxy silane for specially weighing stoichiometry first is poured into the flask with cooling, stirring and heating device；So
Aqueous acid is slowly added dropwise at a certain temperature afterwards, is added dropwise, the reaction was continued；Reactant is moved into separatory funnel again, stand,
Layering, removes water layer；It is washed to neutrality again, is evaporated under reduced pressure, obtains colorless and transparent organic siliconresin.
Above-mentioned alkoxy silane is selected from trimethylmethoxysilane, trimethylethoxysilane, vinyl-dimethyl base methoxy
Base silane, vinyl dimethylethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, dimethylformamide dimethyl oxygen
Base silane, dimethyl diethoxysilane, phenyltrimethoxysila,e, phenyl triethoxysilane, aminomethyl phenyl dimethoxy
Silane, aminomethyl phenyl diethoxy silane, dimethoxydiphenylsilane, diphenyl diethoxy silane, ethyl trimethoxy
Silane, ethyl front three Ethoxysilane, triphenyl methoxy siloxanes, triphenyl ethoxy siloxanes, pheiiyldimetliyl methoxyl group silicon
Alkane, phenyldimethylethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyl methyl diformazan
Oxysilane, vinyl methyl diethoxy silane, tetraethoxysilane, γ-(the third oxygen of 2,3- epoxy) propyl trimethoxy silicon
Alkane, γ-(the third oxygen of 2,3- epoxy) propyl-triethoxysilicane, γ-[the third oxygen of (2,3)-epoxy] hydroxypropyl methyl dimethoxysilane,
γ-[the third oxygen of (2,3)-epoxy] hydroxypropyl methyl diethoxy silane, β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane,
One of γ-methacryloxypropyl trimethoxy silane, 3- glycidyl ether oxygen propyl trimethoxy silicane etc. or
It is a variety of.
Above-mentioned modified hybrid resin, structural formula are shown in formula I
Wherein substituent group E1、E2、E3It is one of epoxy group, alicyclic epoxy group, allyl or a variety of respectively；R1、R2、R3
It is then respectively alkylidene, the oxyalkylene group, oxygen alkenylene carbonyl of linear chain or branched chain.
Modified hybrid resin is selected from triglycidyl isocyanurate (TGIC), triglycidyl isocyanurate derivative
One or both of (TGIC-PSA).
Above-mentioned crosslinking agent is the containing hydrogen silicone oil of line style or the hydrogeneous silicone resin of branching crosslinking, is included at least in molecular structure
Two or more si-h bonds (Si-H)；Its molecular structural formula is Ha(R4)bSiO(4-a-b)/2, R4: CH3、C2H5、C6H5Deng；
0.001≤a≤2,0.7≤b≤2,0.8≤a+b≤3.Si-h bond is distributed in the both ends or centre of strand, hydrogen in molecular structure
Content (mass percent) is 0.1~1.5%, and viscosity is between 20~100000mPaS, wherein with 50~2000mPaS
Be it is best, can be one such or a variety of mixing.
Above-mentioned coupling agent is selected from acryloxy silane coupling agent, epoxy group coupling agent, phthalate coupling agent, borate
Class coupling agent, aluminate coupling agent and its hydrolysate.Specifically such as: γ-methacryloxypropyl trimethoxy silane,
3- glycidyl ether oxygen propyl trimethoxy silicane, 3- (2,3 the third oxygen of epoxy) hydroxypropyl methyl diethoxy silane, 2- (3,4- ring
Oxygen cyclohexyl) ethyl trimethoxy silane, γ-isocyanate propyl trimethoxysilane, butyl borate, three isopropyl of boric acid
Ester, three titanium stearate isopropyl propionates, tetrabutyl titanate, bis- (levulinic ketone group) ethyoxyl isopropoxy titanate esters, bis- (three ethyl alcohol
Amine) diisopropyl titanate esters, four n-propyl zirconates etc., wherein be preferred with 3- glycidyl ether oxygen propyl trimethoxy silicane,
It is especially best with its mixture of hydrolysate.It can be the mixture of one or more of them and its hydrolysate.
Metallic compound or complex compound and some rare earth compound of the above-mentioned promotor selected from VIII, VII race, mainly
Have: platinum series catalyst (Speier catalyst, Karstedt catalyst), rhodium series catalysts (Wilkinson catalyst), palladium system
Catalyst etc., wherein with chloroplatinic acid complex compound catalyst be it is best, Pt content is between 1000~5000ppm.
Above-mentioned other function auxiliary agent includes polymerization inhibitor, defoaming agent, thixotropic agent, antioxidant, uvioresistant light agent etc., such as:
Methyl butynol, ethynylcyclohexanol, butylhydroxy anisole (BHA), di-tert-butyl p-cresol (BHT), tertiary butyl are to benzene
Diphenol (TBHQ), fumed silica etc., can be one or more of them mixture.
Above-mentioned conduction powder is selected from aluminium oxide, aluminium nitride, boron nitride, silicon carbide, diamond etc..
Another aspect of the present invention provides the method for preparing above-mentioned heat conductive insulating die bond material, uses alkoxyl silicone first
Alkane hydrolysis prepares organic siliconresin, then mixes it with hybrid resin, crosslinking agent, promotor, conduction powder, function additive etc.
Stirring, and heat conductive insulating die bond material can be obtained in vacuum defoamation, encapsulating.
Another aspect of the present invention provides above-mentioned heat conductive insulating die bond material in preparation LED chip, preferably small size LED
Purposes in chip.
Beneficial effect
The present invention is by organic siliconresin of the synthesis containing unsaturated bond and epoxy group, and by itself and optical grade hexa-member heterocycle
The modified resin and conduction powder of triazine structure combine, and obtain that a kind of intensity is high, caking property is good, high reliablity heat conductive insulating is solid
Brilliant material.It solves the problems, such as that the current small size LED chip organosilicon die bond strength of materials is low and bad adhesion, can satisfy
The die bond cooling requirements of high-power small size LED chip realize the production domesticization of high-performance die bond material.
Specific embodiment
Below by way of the mode of specific embodiment, the present invention is described in further detail, but should not be understood as to this
The limitation of invention.Those of ordinary skill in the art according to the above technical scheme, can also make the modifications of diversified forms, replacement,
Change.All modifications made based on above-mentioned thought, replacement, change belong to the present invention.
Multiple embodiments are set forth below to further illustrate the specific embodiment of the method for the present invention, and implement this method
Good result, it is noted that the method for the present invention is not limited to cited embodiment.
The preparation of 1 organic siliconresin of embodiment
198.0g phenyltrimethoxysila,e, 5.12g 3- glycidyl ether oxygen propyl trimethoxy silicon are successively weighed first
Alkane, 23.24g vinyl-dimethyl methoxylsilane are mixed the reaction kettle uniformly poured into stirring and heating device
In；Then the aqueous acetic acid of 96.0g pH=2 is slowly added dropwise at 50 DEG C, is added dropwise, is warming up to 80 DEG C the reaction was continued 10
~16h；Finally reaction product is separated, is washed to neutrality, obtains the colorless and transparent organosilicon tree of 150g through vacuum distillation
Rouge, viscosity 56720mPaS, contents of ethylene 3.6%, epoxy group content 0.57%.
The preparation of 2 organic siliconresin of embodiment
198.0g phenyltrimethoxysila,e, 208g tetraethoxysilane, 364.6g aminomethyl phenyl two are successively weighed first
Methoxy silane, 2.46g β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane, 30.94g vinyl-dimethyl ylmethoxy silicon
Alkane is mixed and uniformly pours into the reaction kettle with stirring and heating device；Then 96.0g pH is slowly added dropwise at 50 DEG C
=2 aqueous acetic acid, is added dropwise, and is warming up to 80 DEG C the reaction was continued 10~16h；Finally reaction product is separated, water
It is washed till neutrality, obtains the colorless and transparent organic siliconresin of 450g, viscosity 129300mPaS through vacuum distillation, contents of ethylene is
1.6%, epoxy group content 0.06%.
The preparation of 3 organic siliconresin of embodiment
23.4 γ-methacryloxypropyl trimethoxy silane, 272.5g methyl trimethoxy oxygroup are successively weighed first
Silane, 244.2g dimethoxydiphenylsilane, 5.0g β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane, 32.5g tri-
Methylmethoxysilane is mixed and uniformly pours into the reaction kettle with stirring and heating device；Then at 50 DEG C slowly
The aqueous acetic acid of 96.0g pH=2 is added dropwise, is added dropwise, is warming up to 80 DEG C the reaction was continued 10~16h；Finally to reaction product
It separated, be washed to neutrality, obtain the colorless and transparent organic siliconresin of 340g, viscosity 63500mPaS, second through vacuum distillation
Amount vinyl content is 0.8%, epoxy group content 0.25%.
The preparation of 4 heat conductive insulating die bond material of embodiment
Organic siliconresin product 50.0g in Example 1, modified resin triglycidyl isocyanurate respectively
(TGIC) the hydrogeneous silicone resin of 2.0g, crosslinking agent (η=350mPaS, H%=1.2) 2.5g, Karstedt catalyst (2000ppm)
2.5g, aluminium oxide 130g, KH-560/550 (9/1) hydrolysate 4.0g, acetylene cyclohexanol 0.05g；It places it in mixing tank and mixes
It closes uniformly, after vacuum defoamation, the sticky die bond material of milky can be obtained.The material is poured into Teflon mould
In 150 DEG C of solidifications 60min, hardness 80D of solidfied material, shear strength (1*1mm chip, Si/Ag, 23 DEG C, 7.2kgf), thermally conductive system
Number 0.75W/mK.
The preparation of 5 heat conductive insulating die bond material of embodiment
Respectively the organic siliconresin product 40.0g in Example 1, the organic siliconresin product 10.0g in embodiment 2,
Modified resin triglycidyl isocyanurate derivative (TGIC-PSA) 25.0g, hydrogeneous silicone resin (η=100mPaS, H%=
0.2) 40.0g, Karstedt catalyst (5000ppm) 0.15g, tetrabutyl titanate 1.0g, acetylene cyclohexanol 0.5g, aluminium nitride
50g, bortz powder 200g；It places it in mixing tank and is uniformly mixed, after vacuum defoamation, can be obtained that celadon is sticky to be consolidated
Brilliant material.The material is poured into Teflon mould in 150 DEG C of solidification 60min, the hardness 85D of solidfied material, shear strength
(1*1mm chip, Si/Ag, 23 DEG C, 7.5kgf), thermal coefficient 2.05W/mK.
The preparation of 6 heat conductive insulating die bond material of embodiment
Respectively the organic siliconresin product 30.0g in Example 1, the organic siliconresin product 20.0g in embodiment 3,
Modified resin triglycidyl isocyanurate derivative (TGIC-PSA) 15.0g, hydrogeneous silicone resin (η=1000mPaS, H%
=0.4) 25g, Speier catalyst (5000ppm) 0.15g, 3- glycidyl ether oxygen propyl trimethoxy silicane 4.5g, acetylene
Cyclohexanol 0.6g, boron nitride 80g, diamond 190g；It places it in mixing tank and is uniformly mixed, after vacuum defoamation, can obtain
To the die bond material of thick white.The material is poured into Teflon mould in 150 DEG C of solidification 60min, solidfied material it is hard
Spend 85D, shear strength (1*1mm chip, Si/Ag, 23 DEG C, 7.0kgf), thermal coefficient 2.62W/mK.
The preparation of 7 heat conductive insulating die bond material of embodiment
Respectively the organic siliconresin product 15.0g in Example 2, the organic siliconresin product 35.0g in embodiment 3,
Modified resin triglycidyl isocyanurate derivative (TGIC-PSA) 20.0g, hydrogeneous silicone resin (η=1000mPaS, H%
=0.5) 20g, Speier catalyst (5000ppm) 0.15g, 3- glycidyl ether oxygen propyl trimethoxy silicane 4.5g, acetylene
Cyclohexanol 0.6g, aluminium oxide 140g, diamond 140g；It places it in mixing tank and is uniformly mixed, after vacuum defoamation, can obtain
To the die bond material of thick white.The material is poured into Teflon mould in 150 DEG C of solidification 60min, solidfied material it is hard
Spend 83D, shear strength (1*1mm chip, Si/Ag, 23 DEG C, 6.8kgf), thermal coefficient 1.87W/mK.
Claims (11)
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| CN117089318A (en) * | 2023-07-25 | 2023-11-21 | 北京康美特科技股份有限公司 | Organic silicon die-bonding adhesive and preparation method and application thereof |
| CN117089318B (en) * | 2023-07-25 | 2024-05-10 | 北京康美特科技股份有限公司 | A kind of organic silicon solid crystal adhesive and its preparation method and application |
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