TW202110577A - Polishing device - Google Patents
Polishing device Download PDFInfo
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- TW202110577A TW202110577A TW109124508A TW109124508A TW202110577A TW 202110577 A TW202110577 A TW 202110577A TW 109124508 A TW109124508 A TW 109124508A TW 109124508 A TW109124508 A TW 109124508A TW 202110577 A TW202110577 A TW 202110577A
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- polishing
- pressing member
- pressing
- wafer
- substrate
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- 238000005498 polishing Methods 0.000 title claims abstract description 224
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 230000002093 peripheral effect Effects 0.000 claims abstract description 56
- 230000001154 acute effect Effects 0.000 claims abstract description 14
- 238000004804 winding Methods 0.000 claims description 32
- 235000012431 wafers Nutrition 0.000 description 133
- 238000010586 diagram Methods 0.000 description 19
- 238000006073 displacement reaction Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 10
- 230000009471 action Effects 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
- B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
- B24B21/08—Pressure shoes; Pressure members, e.g. backing belts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
本發明係關於一種用於在貼合晶圓等基板的周緣部形成直角剖面形狀之凹坑的研磨裝置。The present invention relates to a polishing apparatus for forming pits with a right-angle cross-sectional shape on the peripheral edge of a substrate such as a bonded wafer.
為了研磨作為基板之一例的晶圓之周緣部,而使用如圖15所示之具備磨石500的研磨裝置。該類型之研磨裝置係藉由使晶圓W及磨石500旋轉,而且使磨石500接觸晶圓W之周緣部來研磨晶圓W的周緣部,而形成如圖16所示之具有直角剖面形狀的凹坑505。In order to polish the peripheral edge of a wafer as an example of a substrate, a polishing apparatus equipped with a
圖15所示之研磨裝置特別是在貼合各晶圓進行薄化的工序中使用。如圖17A所示,晶圓W係藉由氧化膜或黏接劑(以符號200表示)將形成有圖案之圖案晶圓W1、與由矽晶圓等構成之支撐晶圓W2貼合來製作。如圖17B所示,藉由使晶圓W旋轉,而且將磨石500按壓於晶圓W之周緣部,如圖17C所示地將直角剖面形狀之凹坑510形成於晶圓W的周緣部。The polishing apparatus shown in FIG. 15 is used especially in the step of bonding wafers to thin them. As shown in FIG. 17A, the wafer W is made by bonding a patterned pattern wafer W1 with a patterned wafer W1 and a support wafer W2 composed of a silicon wafer, etc., with an oxide film or adhesive (indicated by the symbol 200). . As shown in FIG. 17B, by rotating the wafer W and pressing the
但是,研磨晶圓W中,由於無法更新(修整)磨石500之研磨面,因此,當磨石500堵塞時,容易造成研磨率降低。此外,因為須從晶圓W除去之材料量多,所以會有磨石500之壽命非常短的問題。However, in the polishing wafer W, since the polishing surface of the
因此,取代磨石500,而提出如圖18A所示之使用研磨帶600的研磨裝置。研磨帶600係在其長度方向移動,而且將研磨帶600之研磨面藉由壓緊構件601按壓於晶圓W的周緣部。研磨晶圓W中,由於研磨帶600在其長度方向移動,因此,不易造成研磨帶600之研磨面的堵塞,而達成穩定之研磨率。
[先前技術文獻]
[專利文獻]Therefore, instead of the
[專利文獻1]日本特開2011-177842號公報 [專利文獻2]日本特開2011-224680號公報[Patent Document 1] JP 2011-177842 A [Patent Document 2] JP 2011-224680 A
(發明所欲解決之問題)(The problem to be solved by the invention)
但是,從圖18A瞭解研磨帶600係從壓緊構件601延伸至外側,延伸至該外側之研磨帶600的部分傾斜接觸晶圓W之周緣部。結果,如圖18B所示,將傾斜之面610形成於晶圓W的周緣部,而無法形成具有直角剖面形狀之凹坑。However, it can be understood from FIG. 18A that the
因此,本發明提供一種使用研磨帶可在晶圓等基板上形成具有直角剖面形狀的凹坑之研磨裝置。 (解決問題之手段)Therefore, the present invention provides a polishing device that can form pits having a right-angled cross-sectional shape on a substrate such as a wafer by using a polishing tape. (Means to solve the problem)
一個樣態提供一種研磨裝置,係具備:保持載台,其係具有用於保持基板之基板保持面;研磨頭,其係具有用於將研磨帶按壓於前述基板保持面上之基板周緣部的壓緊構件;及致動器,其係使前述研磨頭對前述基板保持面在垂直之方向移動;前述壓緊構件具有:壓緊面,其係與前述基板保持面平行;及傾斜面,其係連接於前述壓緊面之內端緣;前述壓緊面與前述傾斜面所成之角度係銳角,前述研磨頭備有定位輥,其係規定前述研磨帶對前述傾斜面之相對位置,在前述定位輥與前述壓緊構件之間延伸的前述研磨帶對前述壓緊面之角度係銳角。One aspect provides a polishing device, which is provided with: a holding stage having a substrate holding surface for holding a substrate; and a polishing head having a peripheral portion of the substrate for pressing a polishing tape on the substrate holding surface A pressing member; and an actuator, which moves the polishing head in a direction perpendicular to the substrate holding surface; the pressing member has: a pressing surface parallel to the substrate holding surface; and an inclined surface, which It is connected to the inner edge of the pressing surface; the angle formed by the pressing surface and the inclined surface is an acute angle. The grinding head is equipped with a positioning roller, which defines the relative position of the grinding belt to the inclined surface. The angle of the abrasive belt extending between the positioning roller and the pressing member to the pressing surface is an acute angle.
一個樣態係前述定位輥與前述壓緊構件之相對位置是固定的。 一個樣態係在前述定位輥與前述壓緊構件之間延伸的前述研磨帶對前述壓緊面之角度在30~90度之範圍內。 一個樣態係前述研磨頭進一步具有:依序放卷軸,其係依序放出前述研磨帶;捲收卷軸,其係捲收前述研磨帶;及基座,其係保持前述定位輥、前述壓緊構件、前述依序放卷軸、及前述捲收卷軸。 一個樣態係前述研磨裝置進一步備有:依序放卷軸,其係依序放出前述研磨帶;及捲收卷軸,其係捲收前述研磨帶;前述依序放卷軸及前述捲收卷軸配置於與前述研磨頭相同的高度。 一個樣態係前述基板保持面是與前述基板相同的大小,或是比前述基板大。One aspect is that the relative position of the positioning roller and the pressing member is fixed. One aspect is that the angle of the grinding belt extending between the positioning roller and the pressing member to the pressing surface is in the range of 30 to 90 degrees. One aspect is that the aforementioned polishing head further has: a sequential unwinding shaft, which discharges the aforementioned abrasive tape in sequence; a reeling shaft, which retracts the aforementioned abrasive tape; and a base, which holds the aforementioned positioning roller and the aforementioned pressing The components, the aforementioned unwinding reel in sequence, and the aforementioned reeling reel. One aspect is that the aforementioned grinding device is further equipped with: a sequential unwinding shaft, which sequentially releases the aforementioned grinding tape; and a rewinding shaft, which rewinds the aforementioned grinding tape; the aforementioned sequential unwinding shaft and the aforementioned winding reel are arranged at The same height as the aforementioned polishing head. One aspect is that the substrate holding surface is the same size as the substrate or larger than the substrate.
一個樣態提供一種研磨裝置,係具備:保持載台,其係具有用於保持基板之基板保持面;研磨頭,其係具有用於將研磨帶按壓於前述基板保持面上之基板周緣部的壓緊構件;及致動器,其係使前述研磨頭在與前述基板保持面平行之方向移動;前述壓緊構件具有:壓緊面,其係對前述基板保持面垂直;及傾斜面,其係連接於前述壓緊面之下端緣;前述壓緊面與前述傾斜面所成之角度係銳角,前述研磨頭備有定位輥,其係規定前述研磨帶對前述傾斜面之相對位置,在前述定位輥與前述壓緊構件之間延伸的前述研磨帶對前述壓緊面之角度係銳角。One aspect provides a polishing device, which is provided with: a holding stage having a substrate holding surface for holding a substrate; and a polishing head having a peripheral portion of the substrate for pressing a polishing tape on the substrate holding surface A pressing member; and an actuator that moves the polishing head in a direction parallel to the substrate holding surface; the pressing member has: a pressing surface perpendicular to the substrate holding surface; and an inclined surface, which It is connected to the lower edge of the pressing surface; the angle formed by the pressing surface and the inclined surface is an acute angle. The grinding head is equipped with a positioning roller, which defines the relative position of the grinding belt to the inclined surface. The angle of the abrasive belt extending between the positioning roller and the pressing member to the pressing surface is an acute angle.
一個樣態係前述定位輥與前述壓緊構件之相對位置是固定的。 一個樣態係在前述定位輥與前述壓緊構件之間延伸的前述研磨帶對前述壓緊面之角度在30~90度之範圍內。 一個樣態係前述研磨頭進一步具有:依序放卷軸,其係依序放出前述研磨帶;捲收卷軸,其係捲收前述研磨帶;及基座,其係保持前述定位輥、前述壓緊構件、前述依序放卷軸、及前述捲收卷軸。 一個樣態係前述研磨裝置進一步備有:依序放卷軸,其係依序放出前述研磨帶;及捲收卷軸,其係捲收前述研磨帶;前述依序放卷軸及前述捲收卷軸配置於前述研磨頭之上方。 一個樣態係前述基板保持面是與前述基板相同的大小,或是比前述基板大。 (發明之效果)One aspect is that the relative position of the positioning roller and the pressing member is fixed. One aspect is that the angle of the grinding belt extending between the positioning roller and the pressing member to the pressing surface is in the range of 30 to 90 degrees. One aspect is that the aforementioned polishing head further has: a sequential unwinding shaft, which discharges the aforementioned abrasive tape in sequence; a reeling shaft, which retracts the aforementioned abrasive tape; and a base, which holds the aforementioned positioning roller and the aforementioned pressing The components, the aforementioned unwinding reel in sequence, and the aforementioned reeling reel. One aspect is that the aforementioned grinding device is further equipped with: a sequential unwinding shaft, which sequentially releases the aforementioned grinding tape; and a rewinding shaft, which rewinds the aforementioned grinding tape; the aforementioned sequential unwinding shaft and the aforementioned winding reel are arranged at Above the aforementioned grinding head. One aspect is that the substrate holding surface is the same size as the substrate or larger than the substrate. (Effects of Invention)
採用本發明時,由於傾斜面對壓緊面係銳角,因此研磨帶係沿著傾斜面傾斜延伸。由於沿著該傾斜面延伸之研磨帶的部分不接觸基板之周緣部,因此,藉由壓緊面按壓於基板之周緣部的研磨帶可將具有直角剖面形狀之凹坑形成於晶圓等基板上。When the present invention is adopted, since the inclined surface is at an acute angle to the pressing surface, the abrasive belt extends obliquely along the inclined surface. Since the portion of the polishing tape extending along the inclined surface does not touch the peripheral edge of the substrate, the polishing tape pressed against the peripheral edge of the substrate by the pressing surface can form pits with a right-angle cross-sectional shape on substrates such as wafers. on.
以下,參照圖式說明本發明之實施形態。 本說明書係將基板之周緣部定義為一區域,其包含:位於基板最外周之坡口(Bevel)部;以及位於該坡口部之半徑方向內側的頂緣部及底緣部。基板之例如為晶圓。Hereinafter, embodiments of the present invention will be described with reference to the drawings. This specification defines the peripheral edge portion of the substrate as an area, which includes: a bevel portion located on the outermost periphery of the substrate; and a top edge portion and a bottom edge portion located on the radially inner side of the bevel portion. The substrate is, for example, a wafer.
圖1A及圖1B係顯示基板之周緣部的放大剖面圖。更詳細而言,圖1A係所謂直型基板之剖面圖,圖1B係所謂圓型基板之剖面圖。在圖1A之基板W中,坡口部係由上側傾斜部(上側坡口部)P、下側傾斜部(下側坡口部)Q、及側部(頂點)R構成之基板W的最外周面(以符號B表示)。圖1B之基板W中,坡口部係構成基板W之最外周面且具有彎曲剖面的部分(以符號B表示)。頂緣部係位於坡口部B之半徑方向內側的平坦之環狀部E1。底緣部位於與頂緣部E1相反側,且係位於坡口部B之半徑方向內側的平坦之環狀部E2。頂緣部E1亦包含形成有元件之區域。頂緣部E1及底緣部E2連接於坡口部B。1A and 1B are enlarged cross-sectional views showing the peripheral edge of the substrate. In more detail, FIG. 1A is a cross-sectional view of a so-called straight substrate, and FIG. 1B is a cross-sectional view of a so-called round substrate. In the substrate W of FIG. 1A, the groove portion is the uppermost portion of the substrate W composed of an upper inclined portion (upper groove portion) P, a lower inclined portion (lower groove portion) Q, and a side portion (apex) R. Peripheral surface (represented by symbol B). In the substrate W of FIG. 1B, the groove portion is a portion (indicated by symbol B) that constitutes the outermost peripheral surface of the substrate W and has a curved cross-section. The top edge portion is a flat annular portion E1 located on the inner side of the groove portion B in the radial direction. The bottom edge portion is located on the opposite side to the top edge portion E1, and is a flat annular portion E2 located on the inner side of the groove portion B in the radial direction. The top edge portion E1 also includes a region where elements are formed. The top edge portion E1 and the bottom edge portion E2 are connected to the groove portion B.
圖2係顯示研磨裝置之一種實施形態的模式圖。本實施形態之研磨裝置係使用於研磨基板之一例的晶圓W周緣部,並在該周緣部形成直角剖面形狀之凹坑的用途。晶圓W之具體例如圖17A所示之貼合晶圓。Fig. 2 is a schematic diagram showing an embodiment of the polishing device. The polishing apparatus of the present embodiment is used for polishing the peripheral edge portion of the wafer W, which is an example of a substrate, and forming pits having a right-angle cross-sectional shape in the peripheral edge portion. A specific example of the wafer W is the bonded wafer shown in FIG. 17A.
如圖2所示,本實施形態之研磨裝置具備:具有用於保持基板之一例的晶圓W之基板保持面1a的保持載台1;使保持載台1以基板保持面1a之軸心CL為中心而旋轉的載台旋轉裝置3;具有用於將研磨帶T按壓於基板保持面1a上之晶圓W的周緣部之壓緊構件5的研磨頭8;及使研磨頭8在對基板保持面1a之垂直方向移動的致動器12。As shown in FIG. 2, the polishing apparatus of this embodiment includes: a
基板保持面1a上形成有孔或溝等開口1b,該開口1b連接於真空管線15。亦可設置複數個開口1b。在將晶圓W之下面置於基板保持面1a上的狀態下,於開口1b中形成真空時,晶圓W藉由真空而保持於基板保持面1a。基板保持面1a具有與晶圓W相同形狀。本實施形態之晶圓W係圓形,基板保持面1a亦係圓形。基板保持面1a具有與晶圓W相同大小。亦即,基板保持面1a之直徑與晶圓W的直徑相同。因此,晶圓W之整個下面藉由基板保持面1a保持。一種實施形態係基板保持面1a亦可比晶圓W大。An
載台旋轉裝置3具備電動機等。該載台旋轉裝置3與固定於保持載台1下部之載台軸1c連結。載台旋轉裝置3工作時,保持載台1及載台軸1c以基板保持面1a之軸心CL為中心而一體旋轉。晶圓W係以晶圓W之軸心與基板保持面1a的軸心CL一致之方式保持於基板保持面1a上。因此,晶圓W與保持載台1一體地以晶圓W之軸心(亦即,基板保持面1a之軸心CL)為中心而旋轉。The stage
在基板保持面1a之上方配置有液體供給噴嘴18。該液體供給噴嘴18係以連接於無圖示之液體供給管線,而將純水或鹼性水等液體供給至晶圓W之中心的方式構成。供給至旋轉之晶圓W中心的液體藉由離心力在晶圓W之整個上面擴散,可保護晶圓W之上面避免遭受研磨屑等微粒子損傷。A
研磨頭8配置於基板保持面1a之外周部的上方。研磨頭8連結於致動器12。致動器12藉由無圖示之托架等保持構件而保持。致動器12之具體構成並無特別限定,例如可藉由空氣汽缸、或滾珠螺桿機構與伺服馬達之組合來構成致動器12。The polishing
研磨頭8具備:依序放出研磨帶T之依序放卷軸21;捲收研磨帶T之捲收卷軸22;及在其長度方向送出研磨帶T之送帶機構25。依序放卷軸21、捲收卷軸22、壓緊構件5、及送帶機構25藉由致動器12而一體移動。The polishing
壓緊構件5配置於基板保持面1a之外周部的上方。壓緊構件5位於保持於基板保持面1a之晶圓W周緣部的正上方。壓緊構件5支撐研磨帶T之背面側,藉由將研磨帶T之研磨面(表面側)對晶圓W之周緣部按壓,來研磨晶圓W之周緣部。研磨帶T之研磨面具有固定在其上之研磨粒。上述之致動器12使壓緊構件5朝向晶圓W之周緣部移動,藉此,壓緊構件5可對晶圓W之周緣部按壓研磨帶T。壓緊構件5將研磨帶T按壓於晶圓W周緣部之力(亦即研磨負荷)可藉由致動器12調節。在晶圓W之研磨點的研磨帶T係在晶圓W之半徑方向(亦即基板保持面1a之半徑方向)延伸。The
研磨頭8具備感測器標的28。該感測器標的28可與壓緊構件5一體地藉由致動器12而移動。研磨裝置具備朝向感測器標的28而配置之變位感測器30。變位感測器30係以測量感測器標的28之移動距離,亦即研磨頭8之移動距離的方式構成。變位感測器30之例如為接觸式變位感測器、非接觸式變位感測器。此種接觸式變位感測器及非接觸式變位感測器可在市場上獲得。一種實施形態亦可不特別設置感測器標的28,而以變位感測器30測量研磨頭8之移動距離。The polishing
變位感測器30連接於動作控制部34,研磨頭8之移動距離的測量值從變位感測器30傳送至動作控制部34。動作控制部34係以依據研磨頭8之移動距離的測量值決定晶圓W之研磨終點的方式構成。動作控制部34至少由1台電腦構成。動作控制部34具備:儲存用於依據研磨頭8之移動距離的測量值決定晶圓W之研磨終點的程式之記憶裝置34a;及按照程式中所含之命令執行運算的處理裝置34b(CPU或GPU等)。The
如下研磨晶圓W。晶圓W以其中心與基板保持面1a之軸心CL一致的方式,藉由無圖示之搬送裝置設置於基板保持面1a上。保持載台1藉由載台旋轉裝置3以軸心CL為中心旋轉,藉此,晶圓W以其軸心為中心而旋轉。液體供給噴嘴18將液體供給至晶圓W之中心,並將液體膜形成於晶圓W之上面。而後,致動器12使包含壓緊構件5之整個研磨頭8朝向晶圓W移動,壓緊構件5對晶圓W之周緣部按壓研磨帶T的研磨面。壓緊構件5將研磨帶T按壓於晶圓W之周緣部的方向係與晶圓W之上面垂直的方向。晶圓W之周緣部在液體存在下,藉由研磨帶T與晶圓W之相對運動而研磨。晶圓W研磨中,研磨帶T以指定速度在其長度方向輸送。The wafer W is polished as follows. The wafer W is set on the
晶圓W研磨中,變位感測器30測量研磨頭8之移動距離。研磨頭8之移動距離的測量值傳送至動作控制部34。動作控制部34決定研磨頭8之移動距離的測量值到達預設之目標值的時間之研磨終點。動作控制部34決定研磨終點之後,對致動器12發出指令使研磨頭8從晶圓W分離,接著,使載台旋轉裝置3停止。致動器12由滾珠螺桿機構與伺服馬達之組合構成的一種實施形態,係動作控制部34可從滾珠螺桿機構之螺桿間距與伺服馬達的旋轉次數求出研磨頭8之移動距離。因此,亦可省略變位感測器30。During the polishing of the wafer W, the
圖3係研磨頭8之放大圖。研磨頭8具備:依序放出研磨帶T之依序放卷軸21;捲收研磨帶T之捲收卷軸22;支撐研磨帶T之定位輥33及複數個導輥35, 36;及在其長度方向送出研磨帶T之送帶機構25。研磨帶T從依序放卷軸21依序經由導輥35、定位輥33、壓緊構件5、導輥36、及送帶機構25而延伸至捲收卷軸22。FIG. 3 is an enlarged view of the polishing
研磨頭8進一步具有:基座40,該基座40保持定位輥33、導輥35, 36、壓緊構件5、送帶機構25、依序放卷軸21、及捲收卷軸22。感測器標的28固定於基座40。壓緊構件5固定於基座40之下部,並從基座40之下部突出於下方。壓緊構件5具有:與基板保持面1a平行之壓緊面5A;及連接於壓緊面5A之內端緣5c的傾斜面5B。壓緊面5A構成壓緊構件5之底面,且位於基座40的下方。The polishing
送帶機構25具有:送帶輥25A;連結於送帶輥25A之送帶馬達25B;及對送帶輥25A按壓研磨帶T之夾持輥25C。夾持輥25C藉由無圖示之施力裝置(例如,彈簧)而朝向送帶輥25A施力。研磨帶T被夾在送帶輥25A與夾持輥25C之間。送帶輥25A及夾持輥25C可旋轉地支撐於基座40。送帶馬達25B固定於基座40。藉由送帶馬達25B旋轉送帶輥25A時,研磨帶T在其長度方向送出。亦即,研磨帶T在圖3之箭頭指示的方向送出,並從依序放卷軸21移動至捲收卷軸22。晶圓W研磨中,研磨帶T藉由送帶機構25以指定速度送出。The
定位輥33、導輥35, 36、依序放卷軸21、及捲收卷軸22可旋轉地保持於基座40。由於壓緊構件5亦固定於基座40,因此,壓緊構件5對定位輥33、導輥35, 36、依序放卷軸21、及捲收卷軸22之相對位置是固定的。定位輥33及導輥36鄰接於壓緊構件5而配置。定位輥33之至少一部分在基板保持面1a的半徑方向(亦即在晶圓W的半徑方向)位於壓緊面5A之內端緣5c的外側。The
定位輥33發揮導輥功能,用於規定(固定)研磨帶T對壓緊構件5之傾斜面5B的相對位置。沿著傾斜面5B之研磨帶T的位置被定位輥33固定。壓緊構件5之傾斜面5B朝向基板保持面1a之軸心CL(參照圖2),而構成壓緊構件5的內側之面。定位輥33與傾斜面5B的上端之距離,比導輥35, 36與傾斜面5B的上端之距離短。換言之,定位輥33配置於比導輥35, 36最靠近傾斜面5B之位置。The
依序放卷軸21及捲收卷軸22分別連結於2個張力馬達45, 46。此等張力馬達45, 46固定於基座40。張力馬達45, 46係以對依序放卷軸21及捲收卷軸22賦予反方向之轉矩的方式構成,藉此,可對研磨帶T賦予張力。The unwinding
為了避免被壓緊構件5及定位輥33支撐之研磨帶T鬆弛,在晶圓W研磨中,需要將研磨帶T之張力維持在某種程度高。本實施形態係依序放卷軸21、捲收卷軸22、及壓緊構件5支撐於共用的基座40。特別是,由於壓緊構件5固定於基座40,因此即使提高研磨帶T之張力,壓緊構件5對基座40之相對位置仍不致變化。因此,致動器12不致影響研磨帶T之張力,而可將預設之研磨負荷正確地賦予壓緊構件5。In order to prevent the polishing tape T supported by the pressing
圖4係壓緊構件5之立體圖。傾斜面5B從壓緊面5A之內端緣5c延伸至上方。壓緊面5A及傾斜面5B皆係平坦之面。壓緊面5A與傾斜面5B所成之角度α係銳角。更具體而言,角度α係20~90度之範圍內,並宜在30~70度之範圍內。壓緊構件5由不銹鋼等金屬、或是硬質之樹脂構成。FIG. 4 is a perspective view of the
圖5係顯示壓緊構件5與定位輥33之放大側視圖。定位輥33位於傾斜面5B之正上方,且接近傾斜面5B配置。定位輥33之至少一部分在基板保持面1a之半徑方向(亦即晶圓W之半徑方向),比壓緊面5A之內端緣5c位於外側。定位輥33係以研磨帶T沿著傾斜面5B而延伸之方式引導研磨帶T。研磨帶T對傾斜面5B之相對位置被定位輥33固定。FIG. 5 is an enlarged side view showing the
在定位輥33與壓緊構件5之間延伸的研磨帶T對壓緊面5A之角度β係銳角。角度β不限於銳角,角度β亦可如圖5所示,與壓緊面5A與傾斜面5B所成之角度α相同,亦可如圖6所示,比角度α小,或是如圖7所示,比角度α大。圖5及圖6所示之實施形態係定位輥33配置於使研磨帶T之背面側接觸傾斜面5B的位置,圖7所示之實施形態係定位輥33配置於研磨帶T之背面側從傾斜面5B離開的位置。The angle β of the abrasive belt T extending between the positioning
圖8A至圖8C係顯示研磨晶圓之周緣部的情形圖。晶圓W具有藉由氧化膜或黏接劑(以符號200表示)貼合形成有圖案之圖案晶圓W1、與由矽晶圓等構成之支撐晶圓W2的構成。如圖8A所示,研磨帶T藉由壓緊構件5而按壓於晶圓W之周緣部。壓緊構件5按壓研磨帶T之方向係對基板保持面1a垂直的方向。如圖8B所示,研磨帶T削除圖案晶圓W1之整個周緣部,進一步削除支撐晶圓W2之周緣部的一部分。8A to 8C are diagrams showing how the peripheral edge of the wafer is polished. The wafer W has a structure in which a pattern wafer W1 formed with a pattern and a support wafer W2 composed of a silicon wafer or the like are bonded by an oxide film or an adhesive (indicated by the symbol 200). As shown in FIG. 8A, the polishing tape T is pressed against the peripheral edge of the wafer W by the pressing
晶圓W研磨中,研磨帶T僅藉由構成壓緊構件5之底面的壓緊面5A而按壓於晶圓W,壓緊構件5之傾斜面5B不將研磨帶T按壓於晶圓W。壓緊構件5之壓緊面5A與基板保持面1a平行,且壓緊構件5之移動方向對基板保持面1a垂直。由於基板保持面1a與晶圓W之上面平行,因此,壓緊構件5之壓緊面5A亦與基板保持面1a上之晶圓W的上面平行。因此,研磨帶T如圖8C所示,可隨著壓緊構件5之移動,而在晶圓W之周緣部形成直角剖面形狀的凹坑100。In the polishing of the wafer W, the polishing tape T is pressed against the wafer W only by the
如圖8A及圖8B所示,由於基板保持面1a具有與晶圓W相同大小,因此,經由研磨帶T而從壓緊構件5施加於晶圓W之研磨負荷被保持載台1擋住。因此,晶圓W不致向下方彎曲,結果,壓緊構件5在對晶圓W之上面垂直的方向按壓研磨帶T,研磨帶T可在晶圓W之周緣部形成直角剖面形狀的凹坑。As shown in FIGS. 8A and 8B, since the
晶圓W研磨中,由於研磨帶T係藉由送帶機構25(參照圖3)而在其長度方向逐次送出,因此,不致發生研磨帶T 堵塞。因而,晶圓W之研磨率(除去率)穩定。During the polishing of the wafer W, since the polishing tape T is sequentially sent out in the longitudinal direction by the tape feeding mechanism 25 (refer to FIG. 3 ), the polishing tape T does not become clogged. Therefore, the polishing rate (removal rate) of the wafer W is stable.
圖9係顯示研磨裝置之其他實施形態的模式圖。由於不特別說明之本實施形態的構成與動作,與參照圖1A至圖8C所說明之實施形態相同,因此省略其重複之說明。Fig. 9 is a schematic diagram showing another embodiment of the polishing apparatus. Since the configuration and operation of the present embodiment, which are not specifically described, are the same as the embodiment described with reference to FIGS. 1A to 8C, the repeated description thereof will be omitted.
本實施形態之依序放卷軸21及捲收卷軸22係離開研磨頭8而配置。更具體而言,依序放卷軸21及捲收卷軸22係可旋轉地支撐於離開研磨頭8而配置之卷軸支架(reel suport)50。依序放卷軸21及捲收卷軸22配置於研磨頭8之基座40的外側,並位於與研磨頭8相同高度。研磨頭8具備:可旋轉地支撐於基座40之上部的第一導輥51及第二導輥52。第一導輥51位於與依序放卷軸21相同高度,第二導輥位於與捲收卷軸22相同高度。因此,研磨帶T係從依序放卷軸21在橫方向延伸至第一導輥51。同樣地,研磨帶T係從第二導輥52橫方向延伸至捲收卷軸22。The unwinding
張力馬達45, 46固定於卷軸支架50。卷軸支架50之位置是固定的,依序放卷軸21及捲收卷軸22之位置亦同樣是固定的。致動器12使包含第一導輥51、第二導輥52、定位輥33、壓緊構件5之研磨頭8在與基板保持面1a(晶圓W之上面)垂直的方向移動,另外,依序放卷軸21及捲收卷軸22之位置不變。The
藉由2個張力馬達45, 46將相反方向之轉矩賦予依序放卷軸21及捲收卷軸22時,則對研磨帶T施加張力。該研磨帶T之張力產生使研磨頭8朝向依序放卷軸21及捲收卷軸22靠近之力。靠近研磨頭8之力的方向與致動器12使研磨頭8移動的方向垂直。因此,致動器12賦予研磨頭8的壓緊構件5之力(研磨負荷)幾乎不影響研磨帶T之張力。結果,致動器12不影響研磨帶T之張力,而可將預設之研磨負荷正確地賦予壓緊構件5。When torques in opposite directions are applied to the unwinding
圖10係顯示研磨裝置之又其他實施形態的模式圖。由於不特別說明之本實施形態的構成與動作,與參照圖1A至圖8C所說明之實施形態相同,因此省略其重複之說明。本實施形態之整個研磨頭8係將圖2所示之研磨頭8設置成傾斜90度的狀態。包含壓緊構件5及定位輥33之整個研磨頭8位於基板保持面1a的外側。更具體而言,研磨頭8在基板保持面1a之半徑方向位於基板保持面1a的外側,且壓緊構件5配置於比基板保持面1a稍高的位置。壓緊構件5固定於基座40之內側部,並從基座40之內側部朝向基板保持面1a突出。Fig. 10 is a schematic diagram showing still another embodiment of the polishing apparatus. Since the configuration and operation of the present embodiment, which are not specifically described, are the same as the embodiment described with reference to FIGS. 1A to 8C, the repeated description thereof will be omitted. In the
致動器12在基板保持面1a之半徑方向位於研磨頭8的外側。致動器12係以使研磨頭8在基板保持面1a之半徑方向(亦即晶圓W之半徑方向)移動的方式配置。換言之,致動器12可使研磨頭8在朝向基板保持面1a之軸心CL的方向及從軸心CL離開之方向移動。因此,壓緊構件5可將研磨帶T對晶圓W之周緣部在朝向晶圓W中心的方向按壓。The
圖11係圖10所示之研磨頭8的放大圖。壓緊構件5之壓緊面5A對基板保持面1a垂直,傾斜面5B係從壓緊面5A之下端緣5d向上方傾斜。壓緊面5A與傾斜面5B所成之角度、以及在定位輥33與壓緊構件5之間延伸的研磨帶T對壓緊面5A之角度與上述實施形態相同。定位輥33之最高點在比壓緊面5A之下端緣5d高的位置。本實施形態之壓緊面5A朝向基板保持面1a之軸心CL,並與軸心CL平行。FIG. 11 is an enlarged view of the polishing
圖12係圖11所示之壓緊構件5的立體圖。如圖12所示,壓緊面5A係以與晶圓W之周緣部的曲率相同曲率而彎曲。因此,當壓緊面5A對晶圓W之周緣部按壓研磨帶T時,研磨帶T沿著晶圓W之周緣部而彎曲。因此,使壓緊面5A沿著晶圓W之周緣部而彎曲的理由,是為了增大研磨帶T與晶圓W之周緣部的接觸面積。Fig. 12 is a perspective view of the
圖13A至圖13C係顯示以圖11所示之壓緊構件5將研磨帶T對晶圓W之周緣部按壓的情形圖。如圖13A所示,研磨帶T藉由壓緊構件5而按壓於晶圓W的周緣部。壓緊構件5按壓研磨帶T之方向係與基板保持面1a平行的方向(亦即,與晶圓W之上面平行的方向),且係朝向基板保持面1a之軸心CL的方向(亦即,朝向晶圓W之中心的方向)。如圖13A所示,在研磨起初,研磨帶T僅接觸晶圓W之圖案晶圓W1。FIGS. 13A to 13C are diagrams showing how the polishing tape T is pressed against the peripheral edge of the wafer W by the pressing
如圖13B所示,隨著研磨進行,研磨帶T接觸圖案晶圓W1與支撐晶圓W2兩者,而削除此等2個晶圓W1, W2之周緣部。與上述實施形態同樣地,晶圓W研磨中,研磨帶T僅藉由構成壓緊構件5之內側面的壓緊面5A而按壓於晶圓W,構成壓緊構件5之底面的傾斜面5B不將研磨帶T按壓於晶圓W。壓緊構件5之壓緊面5A係對基板保持面1a垂直,壓緊構件5之移動方向與基板保持面1a平行。由於基板保持面1a與晶圓W之上面實質地平行,因此,研磨帶T如圖13C所示地,隨著壓緊構件5之移動,可在晶圓W之周緣部形成直角剖面形狀的凹坑100。As shown in FIG. 13B, as the polishing progresses, the polishing tape T contacts both the pattern wafer W1 and the supporting wafer W2, and the peripheral portions of the two wafers W1 and W2 are removed. In the same manner as in the above embodiment, during polishing of the wafer W, the polishing tape T is pressed against the wafer W only by the
圖14係顯示研磨裝置之又其他實施形態的模式圖。由於不特別說明之本實施形態的構成與動作,與參照圖10至圖13C所說明之實施形態相同,因此省略其重複之說明。本實施形態之整個研磨頭8係將圖9所示之研磨頭8設置成傾斜90度的狀態。Fig. 14 is a schematic diagram showing still another embodiment of the polishing apparatus. Since the configuration and operation of the present embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 10 to 13C, the repetitive description thereof will be omitted. In the
本實施形態之依序放卷軸21及捲收卷軸22係離開研磨頭8而配置。更具體而言,依序放卷軸21及捲收卷軸22係可旋轉地支撐於離開研磨頭8而配置之卷軸支架50。依序放卷軸21及捲收卷軸22配置於研磨頭8之上方。研磨頭8具備:可旋轉地支撐於基座40之外側部位的第一導輥51及第二導輥52。第一導輥51位於依序放卷軸21之下方,第二導輥位於捲收卷軸22之下方。因此,研磨帶T係從依序放卷軸21朝向第一導輥51而延伸至上方。同樣地,研磨帶T係從第二導輥52朝向捲收卷軸22而延伸至上方。The unwinding
張力馬達45, 46固定於卷軸支架50。卷軸支架50之位置是固定的,依序放卷軸21及捲收卷軸22之位置亦同樣是固定的。致動器12使包含第一導輥51、第二導輥52、定位輥33、壓緊構件5之研磨頭8在與基板保持面1a(晶圓W之上面)平行的方向移動,另外,依序放卷軸21及捲收卷軸22之位置不變。The
藉由2個張力馬達45, 46將相反方向之轉矩賦予依序放卷軸21及捲收卷軸22時,則對研磨帶T施加張力。該研磨帶T之張力產生使研磨頭8朝向依序放卷軸21及捲收卷軸22靠近之力。靠近研磨頭8之力的方向與致動器12使研磨頭8移動的方向垂直。因此,致動器12賦予研磨頭8的壓緊構件5之力(研磨負荷)幾乎不影響研磨帶T之張力。結果,致動器12不影響研磨帶T之張力,而可將預設之研磨負荷正確地賦予壓緊構件5。When torques in opposite directions are applied to the unwinding
上述實施形態係以本發明所屬技術領域中的具有通常知識者可實施本發明為目的而記載者。熟悉本技術者當然可形成上述實施形態之各種修改例,本發明之技術性思想亦可適用於其他實施形態。因此,本發明不限定於所記載之實施形態,應係按照藉由申請專利範圍所定義之技術性思想作最廣範圍的解釋者。 [產業上之可利用性]The above-mentioned embodiments are described for the purpose of being able to carry out the present invention by those with ordinary knowledge in the technical field to which the present invention belongs. Those skilled in the art can of course make various modifications of the above-mentioned embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but should be interpreted in the widest range based on the technical ideas defined by the scope of the patent application. [Industrial availability]
本發明可利用在用於在貼合晶圓等基板的周緣部形成直角剖面形狀之凹坑的研磨裝置。The present invention can be used in a polishing apparatus for forming pits having a right-angle cross-sectional shape on the peripheral edge of a substrate such as a bonded wafer.
1:保持載台
1a:基板保持面
1b:開口
1c:載台軸
3:載台旋轉裝置
5:壓緊構件
5A:壓緊面
5B:傾斜面
5c:內端緣
5d:下端緣
8:研磨頭
12:致動器
15:真空管線
18:液體供給噴嘴
21:依序放卷軸
22:捲收卷軸
25:送帶機構
25A:送帶輥
25B:送帶馬達
25C:夾持輥
28:感測器標的
30:變位感測器
33:定位輥
34:動作控制部
34a:記憶裝置
34b:處理裝置
35,36:導輥
40:基座
45,46:張力馬達
50:卷軸支架
51:第一導輥
52:第二導輥
100:凹坑
500:磨石
505:凹坑
510:凹坑
600:研磨帶
601:壓緊構件
610:傾斜之面
CL:軸心
T:研磨帶
W:晶圓
W1:圖案晶圓
W2:支撐晶圓1: Keep the
圖1A係顯示基板之周緣部的放大剖面圖。 圖1B係顯示基板之周緣部的放大剖面圖。 圖2係顯示研磨裝置之一種實施形態的模式圖。 圖3係研磨頭之放大圖。 圖4係壓緊構件之立體圖。 圖5係顯示壓緊構件與定位輥之放大側視圖。 圖6係顯示壓緊構件與定位輥之配置的其他例之側視圖。 圖7係顯示壓緊構件與定位輥之配置的又其他例之側視圖。 圖8A係顯示研磨晶圓之周緣部的情形圖。 圖8B係顯示研磨晶圓之周緣部的情形圖。 圖8C係顯示研磨晶圓之周緣部的情形圖。 圖9係顯示研磨裝置之其他實施形態的模式圖。 圖10係顯示研磨裝置之又其他實施形態的模式圖。 圖11係圖10所示之研磨頭的放大圖。 圖12係圖11所示之壓緊構件的立體圖。 圖13A係顯示以圖11所示之壓緊構件將研磨帶對晶圓之周緣部按壓的情形圖。 圖13B係顯示以圖11所示之壓緊構件將研磨帶對晶圓之周緣部按壓的情形圖。 圖13C係將直角剖面形狀之凹坑形成於周緣部的晶圓之剖面圖。 圖14係顯示研磨裝置之又其他實施形態的模式圖。 圖15係顯示具備磨石之過去研磨裝置的模式圖。 圖16係將直角剖面形狀之凹坑形成於周緣部的晶圓之剖面圖。 圖17A係顯示晶圓之圖。 圖17B係顯示正在研磨晶圓之情形圖。 圖17C係將直角剖面形狀之凹坑形成於周緣部的晶圓之剖面圖。 圖18A係顯示使用研磨帶之過去研磨裝置的模式圖。 圖18B係顯示使用圖18A所示之研磨裝置所研磨的晶圓之周緣部的剖面圖。Fig. 1A is an enlarged cross-sectional view showing the peripheral edge of the substrate. Fig. 1B is an enlarged cross-sectional view showing the peripheral portion of the substrate. Fig. 2 is a schematic diagram showing an embodiment of the polishing device. Figure 3 is an enlarged view of the polishing head. Figure 4 is a perspective view of the pressing member. Figure 5 is an enlarged side view showing the pressing member and the positioning roller. Fig. 6 is a side view showing another example of the arrangement of the pressing member and the positioning roller. Fig. 7 is a side view showing still another example of the arrangement of the pressing member and the positioning roller. FIG. 8A is a diagram showing the state of polishing the peripheral edge of the wafer. FIG. 8B is a diagram showing the situation of polishing the peripheral edge of the wafer. FIG. 8C is a diagram showing the state of polishing the peripheral edge of the wafer. Fig. 9 is a schematic diagram showing another embodiment of the polishing apparatus. Fig. 10 is a schematic diagram showing still another embodiment of the polishing apparatus. Fig. 11 is an enlarged view of the polishing head shown in Fig. 10. Fig. 12 is a perspective view of the pressing member shown in Fig. 11. FIG. 13A is a diagram showing a situation in which the polishing tape is pressed against the peripheral edge of the wafer by the pressing member shown in FIG. 11. FIG. 13B is a diagram showing a situation in which the polishing tape is pressed against the peripheral edge of the wafer by the pressing member shown in FIG. 11. FIG. 13C is a cross-sectional view of a wafer in which pits with a right-angle cross-sectional shape are formed at the peripheral edge. Fig. 14 is a schematic diagram showing still another embodiment of the polishing apparatus. Fig. 15 is a schematic diagram showing a conventional polishing device equipped with a grindstone. FIG. 16 is a cross-sectional view of a wafer in which pits with a right-angle cross-sectional shape are formed on the periphery. Fig. 17A is a diagram showing the wafer. FIG. 17B is a diagram showing the situation when the wafer is being polished. FIG. 17C is a cross-sectional view of a wafer in which pits with a right-angle cross-sectional shape are formed on the periphery. Fig. 18A is a schematic diagram showing a conventional polishing device using a polishing belt. 18B is a cross-sectional view showing the peripheral edge of the wafer polished using the polishing device shown in FIG. 18A.
1:保持載台1: Keep the stage
1a:基板保持面1a: substrate holding surface
5:壓緊構件5: Compression member
5A:壓緊面5A: pressure surface
5B:傾斜面5B: Inclined surface
5c:內端緣5c: inner edge
8:研磨頭8: Grinding head
12:致動器12: Actuator
21:依序放卷軸21: Unwind the scrolls in order
22:捲收卷軸22: Rewinding reel
25:送帶機構25: Belt delivery mechanism
25A:送帶輥25A: Feeding roller
25B:送帶馬達25B: Feeding motor
25C:夾持輥25C: Clamping roller
28:感測器標的28: Sensor target
33:定位輥33: positioning roller
35,36:導輥35, 36: guide roller
40:基座40: Pedestal
45,46:張力馬達45, 46: Tension motor
T:研磨帶T: Grinding belt
W:晶圓W: Wafer
Claims (12)
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JP2019-160458 | 2019-09-03 | ||
JP2019160458A JP2021037585A (en) | 2019-09-03 | 2019-09-03 | Polishing device |
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US6629875B2 (en) * | 2000-01-28 | 2003-10-07 | Accretech Usa, Inc. | Machine for grinding-polishing of a water edge |
US6641464B1 (en) * | 2003-02-21 | 2003-11-04 | Accretech Usa, Inc. | Method and apparatus for polishing the edge of a bonded wafer |
TW200908123A (en) * | 2007-05-21 | 2009-02-16 | Applied Materials Inc | Methods and apparatus to control substrate bevel and edge polishing profiles of films |
JP6013849B2 (en) * | 2012-09-24 | 2016-10-25 | 株式会社荏原製作所 | Polishing method |
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