TW202107663A - Electronic package and method for fabricating the same - Google Patents

Electronic package and method for fabricating the same Download PDF

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TW202107663A
TW202107663A TW108128750A TW108128750A TW202107663A TW 202107663 A TW202107663 A TW 202107663A TW 108128750 A TW108128750 A TW 108128750A TW 108128750 A TW108128750 A TW 108128750A TW 202107663 A TW202107663 A TW 202107663A
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circuit structure
electronic
electronic component
layer
item
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TW108128750A
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Chinese (zh)
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TWI712149B (en
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許有毅
楊志仁
江政嘉
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矽品精密工業股份有限公司
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Priority to TW108128750A priority Critical patent/TWI712149B/en
Priority to CN201910807585.0A priority patent/CN112397483A/en
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Publication of TW202107663A publication Critical patent/TW202107663A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

This invention provides an electronic package comprising a first line structure; an electronic component disposed on the first line structure by a shielding structure; a conductive column disposed on the first line structure; a coating layer coating the electronic component and the conductive column; and a second line structure formed on the coating layer and electrically connecting the electronic component and the conductive column, and by covering the periphery of the electronic component with a shielding structure, the electronic component is prevented from being subjected to external electromagnetic interference when the electronic package operates. This invention further provides a method for fabricating the electronic package.

Description

電子封裝件及其製法 Electronic package and its manufacturing method

本發明係有關一種半導體封裝製程,尤指一種避免電磁干擾之半導體封裝件及其製法。 The present invention relates to a semiconductor packaging process, in particular to a semiconductor package and its manufacturing method for avoiding electromagnetic interference.

隨著電子產業的蓬勃發展,電子產品也逐漸邁向多功能、高性能的趨勢。為了滿足電子封裝件微型化(miniaturization)的封裝需求,係發展出晶圓級封裝(Wafer Level Packaging,簡稱WLP)的技術。 With the vigorous development of the electronics industry, electronic products are gradually moving towards the trend of multi-function and high performance. In order to meet the packaging requirements of miniaturization of electronic packages, Wafer Level Packaging (WLP) technology has been developed.

第1A至1D圖係為習知晶圓級封裝之半導體封裝件1之製法之剖面示意圖。 Figures 1A to 1D are schematic cross-sectional views of the conventional method of manufacturing the semiconductor package 1 of wafer level packaging.

如第1A圖所示,形成一熱化離形膠層(thermal release tape)100於一承載件10上。 As shown in FIG. 1A, a thermal release tape 100 is formed on a carrier 10.

接著,置放複數半導體元件11於該熱化離形膠層100上,該些半導體元件11具有相對之作用面11a與非作用面11b,各該作用面11a上均具有複數電極墊110,且各該作用面11a黏著於該熱化離形膠層100上。 Next, a plurality of semiconductor elements 11 are placed on the thermal release adhesive layer 100. The semiconductor elements 11 have opposite active surfaces 11a and non-active surfaces 11b. Each active surface 11a has a plurality of electrode pads 110, and Each of the acting surfaces 11 a is adhered to the thermal release adhesive layer 100.

如第1B圖所示,形成一封裝膠體14於該熱化離形膠層100 上,以包覆該半導體元件11。 As shown in FIG. 1B, an encapsulant 14 is formed on the thermal release adhesive layer 100 上, to cover the semiconductor element 11.

如第1C圖所示,烘烤該封裝膠體14以硬化該熱化離形膠層100,進而移除該熱化離形膠層100與該承載件10,以外露出該半導體元件11之作用面11a。 As shown in FIG. 1C, the encapsulant 14 is baked to harden the thermal release adhesive layer 100, and then the thermal release adhesive layer 100 and the carrier 10 are removed to expose the active surface of the semiconductor element 11 11a.

如第1D圖所示,形成一線路結構16於該封裝膠體14與該半導體元件11之作用面11a上,且令該線路結構16電性連接該電極墊110。接著,形成一絕緣保護層18於該線路結構16上,且該絕緣保護層18外露該線路結構16之部分表面,以供結合如銲球之導電元件17,進而形成半導體封裝件1。 As shown in FIG. 1D, a circuit structure 16 is formed on the active surface 11a of the encapsulant 14 and the semiconductor device 11, and the circuit structure 16 is electrically connected to the electrode pad 110. Then, an insulating protective layer 18 is formed on the circuit structure 16, and the insulating protective layer 18 exposes part of the surface of the circuit structure 16 for bonding conductive elements 17 such as solder balls to form the semiconductor package 1.

惟,習知半導體封裝件1中,其只能將半導體元件11置放於該封裝膠體14之其中一側,致使採用該半導體封裝件1之終端產品之應用受到大幅限制,難以符合現今終端產品之多功能需求。 However, in the conventional semiconductor package 1, it can only place the semiconductor element 11 on one side of the encapsulant 14, which greatly restricts the application of the terminal product using the semiconductor package 1, which is difficult to meet the current terminal products. The multi-functional needs.

再者,於運作時,因該半導體封裝件1欠缺用於電磁干擾(Electromagnetic interference,簡稱EMI)屏蔽(shielding)的結構,故該半導體元件11容易遭受到外界之電磁干擾(EMI),因而影響整體該半導體封裝件1的電性效能。 Furthermore, during operation, since the semiconductor package 1 lacks a shielding structure for electromagnetic interference (EMI), the semiconductor device 11 is susceptible to external electromagnetic interference (EMI), thus affecting Overall electrical performance of the semiconductor package 1.

因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned conventional technology has become an urgent problem to be solved at present.

鑒於上述習知技術之缺失,本發明提供一種電子封裝件,係包括:第一線路結構,係具有相對之第一側與第二側,且該第一側上形成 有複數電性連接該第一線路結構之導電柱;第一電子元件,係藉由屏蔽結構設於該第一線路結構之第一側上;包覆層,係形成於該第一線路結構之第一側上,以令該包覆層包覆該屏蔽結構、該第一電子元件與該導電柱,且令該第一電子元件之部分表面與該導電柱之端面外露出該包覆層;以及第二線路結構,係形成於該包覆層上且電性連接該導電柱與該第一電子元件。 In view of the deficiencies of the above-mentioned conventional technology, the present invention provides an electronic package including: a first circuit structure having a first side and a second side opposite to each other, and the first side is formed There are a plurality of conductive pillars that are electrically connected to the first circuit structure; the first electronic component is provided on the first side of the first circuit structure by a shielding structure; the cladding layer is formed on the first circuit structure On the first side, the coating layer is used to cover the shielding structure, the first electronic component and the conductive pillar, and part of the surface of the first electronic component and the end surface of the conductive pillar to expose the coating layer; And a second circuit structure is formed on the coating layer and electrically connects the conductive pillar and the first electronic element.

本發明亦提供一種電子封裝件之製法,係包括:提供一具有相對之第一側與第二側之第一線路結構;形成複數電性連接該第一線路結構之導電柱於該第一側上,且藉由屏蔽結構設置第一電子元件於該第一線路結構之第一側上;形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該屏蔽結構、該第一電子元件與該導電柱,且令該第一電子元件之部分表面與該導電柱之端面外露出該包覆層;以及形成第二線路結構於該包覆層上,且令該第二線路結構電性連接該導電柱與該第一電子元件。 The present invention also provides a method for manufacturing an electronic package, which includes: providing a first circuit structure having opposite first and second sides; forming a plurality of conductive pillars electrically connected to the first circuit structure on the first side And the first electronic component is arranged on the first side of the first circuit structure by the shielding structure; a coating layer is formed on the first side of the first circuit structure so that the coating layer covers the shielding Structure, the first electronic component and the conductive column, and make part of the surface of the first electronic component and the end surface of the conductive column expose the coating layer; and form a second circuit structure on the coating layer, and make The second circuit structure electrically connects the conductive pillar and the first electronic component.

前述之電子封裝件及其製法中,該屏蔽結構係包含一設於該第一電子元件上之隔離層及設於該隔離層上之屏蔽層,以令該第一電子元件藉由該屏蔽層設於該第一線路結構之第一側上。 In the aforementioned electronic package and its manufacturing method, the shielding structure includes an isolation layer provided on the first electronic component and a shielding layer provided on the isolation layer, so that the first electronic component can pass through the shielding layer Set on the first side of the first circuit structure.

前述之電子封裝件及其製法中,該第一電子元件具有相對之作用面與非作用面,該第一電子元件係以該非作用面結合該屏蔽結構,而該作用面具有複數電極墊,且該電極墊上形成有導電體。例如,該導電體之端面係外露於該包覆層。 In the aforementioned electronic package and its manufacturing method, the first electronic component has an opposite active surface and a non-active surface, the first electronic component is combined with the shielding structure with the non-active surface, and the active surface has a plurality of electrode pads, and A conductor is formed on the electrode pad. For example, the end surface of the conductor is exposed to the coating layer.

前述之電子封裝件及其製法中,該第二線路結構接地該第一電子元件及/或該屏蔽結構。 In the aforementioned electronic package and its manufacturing method, the second circuit structure is grounded to the first electronic component and/or the shielding structure.

前述之電子封裝件及其製法中,復包括設置電子裝置於該第一線路結構之第二側上,且該電子裝置電性連接該第一線路結構。例如,該電子裝置係包含第二電子元件,其形成於該第一線路結構之第二側上且電性連接該第一線路結構。又,該電子裝置復包含包覆該第二電子元件之封裝層。 In the aforementioned electronic package and its manufacturing method, it further includes disposing an electronic device on the second side of the first circuit structure, and the electronic device is electrically connected to the first circuit structure. For example, the electronic device includes a second electronic element formed on the second side of the first circuit structure and electrically connected to the first circuit structure. In addition, the electronic device further includes an encapsulation layer covering the second electronic component.

前述之電子封裝件及其製法中,復包括形成複數導電元件於該第二線路結構上。 The aforementioned electronic package and its manufacturing method further include forming a plurality of conductive elements on the second circuit structure.

前述之電子封裝件及其製法中,復包括設置另一電子元件於該第二線路結構上。 In the aforementioned electronic package and its manufacturing method, it further includes disposing another electronic component on the second circuit structure.

由上可知,本發明之電子封裝件及其製法,主要藉由該屏蔽結構之設計,使該第一電子元件外圍覆蓋有屏蔽層,以於該電子封裝件運作時,該第一電子元件不會遭受外界或電子裝置之電磁干擾,故相較於習知技術,本發明之電子封裝件的電性功能得以正常運作。 It can be seen from the above that the electronic package and the manufacturing method of the present invention mainly use the shielding structure to cover the periphery of the first electronic component with a shielding layer, so that the first electronic component is not in operation when the electronic package is in operation. It is subject to electromagnetic interference from the outside world or electronic devices, so compared to the prior art, the electrical functions of the electronic package of the present invention can operate normally.

1‧‧‧半導體封裝件 1‧‧‧Semiconductor package

10‧‧‧承載件 10‧‧‧Carrier

100‧‧‧熱化離形膠層 100‧‧‧Thermal release adhesive layer

11‧‧‧半導體元件 11‧‧‧Semiconductor components

11a,21a‧‧‧作用面 11a,21a‧‧‧action surface

11b,21b‧‧‧非作用面 11b,21b‧‧‧Non-acting surface

110,210‧‧‧電極墊 110,210‧‧‧electrode pad

14‧‧‧封裝膠體 14‧‧‧Packaging gel

16‧‧‧線路結構 16‧‧‧Line structure

17,27‧‧‧導電元件 17,27‧‧‧Conductive element

18,202‧‧‧絕緣保護層 18,202‧‧‧Insulation protection layer

2‧‧‧電子封裝件 2‧‧‧Electronic package

2a‧‧‧電子裝置 2a‧‧‧Electronic device

20‧‧‧第一線路結構 20‧‧‧The first line structure

20a‧‧‧第一側 20a‧‧‧First side

20b‧‧‧第二側 20b‧‧‧Second side

200‧‧‧第一絕緣層 200‧‧‧First insulation layer

201‧‧‧第一線路重佈層 201‧‧‧Relaying the first line

21‧‧‧第一電子元件 21‧‧‧The first electronic component

211‧‧‧絕緣層 211‧‧‧Insulation layer

212‧‧‧導電體 212‧‧‧Conductor

214,221,91‧‧‧結合層 214,221,91‧‧‧Combination layer

22‧‧‧第二電子元件 22‧‧‧Second electronic component

220‧‧‧銲線 220‧‧‧Wire

23‧‧‧導電柱 23‧‧‧Conductive post

24‧‧‧封裝層 24‧‧‧Encapsulation layer

25‧‧‧包覆層 25‧‧‧Coating

26‧‧‧第二線路結構 26‧‧‧Second line structure

260,260’‧‧‧第二絕緣層 260,260’‧‧‧Second insulating layer

261,261’‧‧‧第二線路重佈層 261,261’‧‧‧Second line re-layout

270‧‧‧凸塊底下金屬層 270‧‧‧Metal layer under bump

28‧‧‧電子元件 28‧‧‧Electronic components

29‧‧‧屏蔽結構 29‧‧‧Shielding structure

290‧‧‧隔離層 290‧‧‧Isolation layer

291‧‧‧屏蔽層 291‧‧‧Shielding layer

7‧‧‧承載件 7‧‧‧Carrier

8‧‧‧支撐結構 8‧‧‧Supporting structure

80‧‧‧保護膜 80‧‧‧Protective film

9‧‧‧承載板 9‧‧‧Carrier plate

90‧‧‧離型層 90‧‧‧Release layer

S‧‧‧切割路徑 S‧‧‧cutting path

21c‧‧‧側面 21c‧‧‧Side

第1A至1D圖係為習知半導體封裝件之製法之剖面示意圖。 Figures 1A to 1D are schematic cross-sectional views of the conventional manufacturing method of semiconductor packages.

第2A至2F圖係為本發明之電子封裝件之製法的剖面示意圖。 2A to 2F are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.

第2A’圖係為第2A圖之前期作業示意圖。 Figure 2A’ is a schematic diagram of the previous operations of Figure 2A.

第2A”圖係為第2A圖之另一實施方式示意圖。 Fig. 2A" is a schematic diagram of another embodiment of Fig. 2A.

第2D’圖係為第2E圖之前期作業示意圖。 Figure 2D' is a schematic diagram of the previous operations of Figure 2E.

第2F’圖係為第2F圖之另一實施例示意圖。 Figure 2F' is a schematic diagram of another embodiment of Figure 2F.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings in this manual are only used to match the content disclosed in the manual for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment, without affecting the effects and objectives that can be achieved by the present invention, should still fall within the scope of the present invention. The technical content disclosed by the invention can be covered. At the same time, the terms "on", "first", "second" and "one" cited in this specification are only for ease of description and are not used to limit the scope of the present invention. The change or adjustment of the relative relationship shall be regarded as the scope of the implementation of the present invention without substantial changes to the technical content.

第2A至2F圖係為本發明之電子封裝件2之製法的剖面示意圖。 2A to 2F are schematic cross-sectional views of the manufacturing method of the electronic package 2 of the present invention.

如第2A圖所示,於一承載板9上結合一第一線路結構20,該第一線路結構20具有相對之第一側20a與第二側20b,且該第一線路結構20以其第二側20b結合至該承載板9上。接著,於該第一線路結構20之第一側20a上形成複數電性連接該第一線路結構20之導電柱23,且設置第一電子元件21於該第一線路結構20之第一側20a上,其中,該第一電子元件21上係結合並電性連接複數導電體212,且該導電體212係為如 銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。 As shown in FIG. 2A, a first circuit structure 20 is combined with a carrier board 9. The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other, and the first circuit structure 20 has a first side 20a and a second side 20b. The two sides 20b are bonded to the supporting board 9. Next, a plurality of conductive pillars 23 electrically connected to the first circuit structure 20 are formed on the first side 20a of the first circuit structure 20, and the first electronic component 21 is disposed on the first side 20a of the first circuit structure 20 Wherein, the first electronic component 21 is combined and electrically connected to a plurality of conductors 212, and the conductors 212 are such as The ball shape of the solder ball, or the column shape of metal materials such as copper pillars and solder bumps, or the stud shape (stud) made by wire bonding machine, but not limited to this.

於本實施例中,該第一線路結構20係包括至少一第一絕緣層200與設於該第一絕緣層200上之一第一線路重佈層(redistribution layer,簡稱RDL)201。例如,形成該第一線路重佈層201之材質係為銅,且形成該第一絕緣層200之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。另外,該承載板9係例如為半導體材質之圓形板體,其上以塗佈方式依序形成有一離型層90與一結合層91,以供該第一線路結構20設於該結合層91上。 In this embodiment, the first circuit structure 20 includes at least one first insulating layer 200 and a first redistribution layer (RDL) 201 disposed on the first insulating layer 200. For example, the material for forming the first circuit redistribution layer 201 is copper, and the material for forming the first insulating layer 200 is, for example, Polybenzoxazole (PBO), Polyimide (Polyimide) Dielectric materials such as PI), Prepreg (PP), etc. In addition, the carrier board 9 is, for example, a circular board made of semiconductor material, on which a release layer 90 and a bonding layer 91 are sequentially formed by coating, so that the first circuit structure 20 is disposed on the bonding layer. 91 on.

再者,該導電柱23係設於該第一線路重佈層201上並電性連接該第一線路重佈層201,且形成該導電柱23之材質係為如銅之金屬材或銲錫材。 Furthermore, the conductive pillar 23 is disposed on the first circuit redistribution layer 201 and electrically connected to the first circuit redistribution layer 201, and the material for forming the conductive pillar 23 is a metal material such as copper or a solder material .

又,該第一電子元件21係為主動元件、被動元件或其二者組合,其中,該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於本實施例中,該第一電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,該第一電子元件21係以其非作用面21b設於該第一線路結構20之第一側20a上,而該作用面21a具有複數電極墊210,其中,該導電體212形成於該電極墊210上,另於該作用面21a上形成有一絕緣層211,以令該絕緣層211覆蓋該些電極墊210與該些導電體212。或者,亦可令該導電體212外露於該絕緣層211。 In addition, the first electronic component 21 is an active component, a passive component, or a combination of both, wherein the active component is a semiconductor chip, and the passive component is a resistor, a capacitor, and an inductor. In this embodiment, the first electronic component 21 is a semiconductor chip, which has an active surface 21a and a non-active surface 21b opposite to each other. The first electronic component 21 is disposed on the first circuit structure with its non-active surface 21b. On the first side 20a of 20, the active surface 21a has a plurality of electrode pads 210, wherein the conductor 212 is formed on the electrode pad 210, and an insulating layer 211 is formed on the active surface 21a to insulate the The layer 211 covers the electrode pads 210 and the conductive bodies 212. Alternatively, the conductor 212 can also be exposed to the insulating layer 211.

另外,該第一電子元件21之非作用面21b與側面21c上係 形成有屏蔽結構29,其包含一設於該第一電子元件21上之隔離層290及設於該隔離層290上之屏蔽層291,以令該第一電子元件21藉由該屏蔽層291設於該第一線路結構20之第一側20a上。例如,形成該屏蔽層291之材質係為銅,且形成該隔離層290之材質係為如聚對二唑苯(PBO)、聚醯亞胺(PI)、預浸材(PP)等之介電材。具體地,如第2A’圖所示,結合有該屏蔽結構29之第一電子元件21之製程,係於一整版面承載件7上排設複數該第一電子元件21,再於該承載件7及第一電子元件21上形成該屏蔽結構29,之後進行切單製程及移除該承載件7。 In addition, the non-acting surface 21b and the side surface 21c of the first electronic component 21 are A shielding structure 29 is formed, which includes an isolation layer 290 disposed on the first electronic component 21 and a shielding layer 291 disposed on the isolation layer 290, so that the first electronic component 21 is configured by the shielding layer 291 On the first side 20a of the first circuit structure 20. For example, the material for forming the shielding layer 291 is copper, and the material for forming the isolation layer 290 is such as polypara-diazole benzene (PBO), polyimide (PI), prepreg (PP), etc. Electric material. Specifically, as shown in Figure 2A', the manufacturing process of the first electronic component 21 incorporating the shielding structure 29 is to arrange a plurality of the first electronic components 21 on a full-page carrier 7, and then place the first electronic components 21 on the carrier 7. The shielding structure 29 is formed on the 7 and the first electronic component 21, and then the singulation process is performed and the carrier 7 is removed.

應可理解地,該屏蔽層291可直接加熱以黏結於該第一線路結構20之第一絕緣層200上;或者,如第2A”圖所示,該屏蔽層291可藉由如黏膠之結合層214黏結於該第一線路結構20之第一絕緣層200上。 It should be understood that the shielding layer 291 can be directly heated to bond to the first insulating layer 200 of the first circuit structure 20; or, as shown in FIG. 2A", the shielding layer 291 can be made of adhesive The bonding layer 214 is bonded to the first insulating layer 200 of the first circuit structure 20.

如第2B圖所示,形成一包覆層25於該第一線路結構20之第一側20a上,以令該包覆層25包覆該屏蔽結構29、該第一電子元件21、該些導電體212與該些導電柱23,再藉由整平製程,令該包覆層25之上表面齊平該絕緣層211之上表面、該導電柱23之端面與該導電體212之端面,使該絕緣層211之上表面、該導電柱23之端面與該導電體212之端面外露出該包覆層25。 As shown in FIG. 2B, a coating layer 25 is formed on the first side 20a of the first circuit structure 20, so that the coating layer 25 covers the shielding structure 29, the first electronic component 21, and the The conductor 212 and the conductive pillars 23 are flattened so that the upper surface of the coating layer 25 is flush with the upper surface of the insulating layer 211, the end face of the conductive pillar 23 and the end face of the conductor 212, The coating layer 25 is exposed outside the upper surface of the insulating layer 211, the end surface of the conductive pillar 23, and the end surface of the conductor 212.

於本實施例中,形成該包覆層25之材質係為聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)或封裝材(molding compound)等絕緣材,但並不限於上述。 In this embodiment, the material forming the coating layer 25 is an insulating material such as polyimide (PI), dry film, epoxy, or molding compound. , But not limited to the above.

再者,可用壓合(lamination)或模壓(molding)之方式將該包覆層25形成於該第一線路結構20之第一側20a上。 Furthermore, the coating layer 25 can be formed on the first side 20a of the first circuit structure 20 by lamination or molding.

又,該整平製程係藉由研磨方式,移除該導電柱23之部分材質、該絕緣層211之部分材質(依需求,可同時移除該導電體212之部分材質)、與該包覆層25之部分材質。 In addition, the leveling process is to remove part of the material of the conductive pillar 23, part of the material of the insulating layer 211 (part of the material of the conductor 212 can be removed at the same time as required), and the coating by grinding. Part of the material of layer 25.

應可理解地,若該導電體212已外露於該絕緣層211,則移除該絕緣層211之部分材質,即可令該些導電體212外露於該包覆層25(依需求,亦可同時移除該絕緣層211之部分材質與該導電體212之部分材質,而令該些導電體212外露出該包覆層25)。 It should be understood that if the conductor 212 has been exposed on the insulating layer 211, part of the material of the insulating layer 211 is removed to expose the conductors 212 on the coating layer 25 (as required, it can also be At the same time, part of the material of the insulating layer 211 and part of the material of the conductor 212 are removed, so that the conductors 212 are exposed to the coating layer 25).

如第2C圖所示,形成一第二線路結構26於該包覆層25上,且令該第二線路結構26電性連接該些導電柱23與該導電體212,使該第一電子元件21藉由該導電體212電性連接及接地該第二線路結構26,且該屏蔽結構29可依需求接地該第二線路結構26。 As shown in FIG. 2C, a second circuit structure 26 is formed on the cladding layer 25, and the second circuit structure 26 is electrically connected to the conductive pillars 23 and the conductor 212, so that the first electronic element 21 is electrically connected and grounded to the second circuit structure 26 by the conductor 212, and the shielding structure 29 can be grounded to the second circuit structure 26 as required.

於本實施例中,該第二線路結構26係包括複數第二絕緣層260,260’、及設於該第二絕緣層260,260’上之複數第二線路重佈層(RIDL)261,261’,且最外層之第二絕緣層260’可作為防銲層,以令最外層之第二線路重佈層261’外露於該防銲層。或者,該第二線路結構26亦可僅包括單一第二絕緣層260及單一第二線路重佈層261。 In this embodiment, the second circuit structure 26 includes a plurality of second insulating layers 260, 260', and a plurality of second circuit redistribution layers (RIDL) 261, 261' disposed on the second insulating layers 260, 260', and the outermost layer The second insulating layer 260' can be used as a solder mask, so that the second circuit redistribution layer 261' of the outermost layer is exposed to the solder mask. Alternatively, the second circuit structure 26 can also only include a single second insulating layer 260 and a single second circuit redistribution layer 261.

再者,形成該第二線路重佈層261,261’之材質係為銅,且形成該第二絕緣層260,260’之材質係為如聚對二唑苯(PBO)、聚醯亞胺(PI)、預浸材(PP)之介電材。 Furthermore, the material for forming the second circuit redistribution layer 261, 261' is copper, and the material for forming the second insulating layer 260, 260' is such as polyparabenzazole (PBO), polyimide (PI), Dielectric material of prepreg (PP).

又,形成複數如銲球之導電元件27於最外層之第二線路重佈層261’上,俾供後續接置如封裝結構或其它結構(如另一封裝件或晶片)之電子裝置(圖略)。例如,可形成一凸塊底下金屬層 (Under Bump Metallurgy,簡稱UBM)270於最外層之第二線路重佈層261’上,以利於結合該導電元件27。 In addition, a plurality of conductive elements 27 such as solder balls are formed on the second circuit redistribution layer 261' of the outermost layer for subsequent connection of electronic devices such as package structures or other structures (such as another package or chip) (Figure slightly). For example, a metal layer under the bump can be formed Under Bump Metallurgy (UBM for short) 270 is located on the second circuit redistribution layer 261' of the outermost layer to facilitate the bonding of the conductive element 27.

另外,可依需求形成至少一電子元件28於最外層之第二線路重佈層261’上,且該電子元件28藉由如銲錫材料之導電元件27電性連接該第二線路重佈層261’。例如,該電子元件28係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。 In addition, at least one electronic component 28 can be formed on the outermost second circuit redistribution layer 261' according to requirements, and the electronic component 28 is electrically connected to the second circuit redistribution layer 261 through a conductive element 27 such as a solder material. '. For example, the electronic component 28 is an active component, a passive component, or a combination of both, and the active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor, and an inductor.

如第2D至2E圖所示,移除該承載板9及其上之離型層90,且依需求移除該結合層91。之後,翻轉整體結構,再接置至少一電子裝置2a於該第一線路結構20之第二側20b上。 As shown in FIGS. 2D to 2E, the carrier board 9 and the release layer 90 thereon are removed, and the bonding layer 91 is removed as required. After that, the overall structure is turned over, and then at least one electronic device 2 a is connected to the second side 20 b of the first circuit structure 20.

於本實施例中,該電子裝置2a可為封裝結構,如包含第二電子元件22,其係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該第二電子元件22藉由結合層221設於該第一線路結構20之第二側20b上,且藉由複數如金線之銲線220以打線方式電性連接該第一線路重佈層201;或者,該第二電子元件22藉由複數如銲錫材料之導電凸塊(圖略)以覆晶方式設於該第一線路結構20之第二側20b上且電性連接該第一線路重佈層201;亦或,該第二電子元件22可直接接觸該第一線路重佈層201以電性連接該第一線路重佈層201。然而,有關該第二電子元件22電性連接該第一線路重佈層201之方式不限於上述。 In this embodiment, the electronic device 2a may be a package structure, such as including a second electronic component 22, which is an active component, a passive component, or a combination of both, and the active component is, for example, a semiconductor chip, and the passive component Such as resistance, capacitance and inductance. For example, the second electronic component 22 is disposed on the second side 20b of the first circuit structure 20 by the bonding layer 221, and is electrically connected to the first circuit by bonding wires 220 such as gold wires. Cloth layer 201; or, the second electronic component 22 is provided on the second side 20b of the first circuit structure 20 in a flip chip manner by a plurality of conductive bumps such as solder material (the figure is omitted) and is electrically connected to the first circuit structure 20 A circuit redistribution layer 201; or, the second electronic component 22 can directly contact the first circuit redistribution layer 201 to electrically connect the first circuit redistribution layer 201. However, the manner in which the second electronic component 22 is electrically connected to the first circuit redistribution layer 201 is not limited to the above.

再者,可選擇性地形成一如防銲層之絕緣保護層202於該第一線路結構20之第二側20b上,且該絕緣保護層202且有複數開孔,以令 該第一線路重佈層201之部分表面外露於該些開孔,俾供結合該些銲線220。或者,可不形成該絕緣保護層202,而保留該結合層91以作為該防銲層,供形成複數開孔於該結合層91上,以令該第一線路重佈層201之部分表面外露於該些開孔,俾供結合該些銲線220。 Furthermore, an insulating protective layer 202 such as a solder mask can be selectively formed on the second side 20b of the first circuit structure 20, and the insulating protective layer 202 has a plurality of openings to make Part of the surface of the first circuit redistribution layer 201 is exposed to the openings for bonding the bonding wires 220. Alternatively, the insulating protective layer 202 may not be formed, and the bonding layer 91 may be retained as the solder mask for forming a plurality of openings on the bonding layer 91, so that part of the surface of the first circuit redistribution layer 201 is exposed The openings are used to connect the bonding wires 220.

又,該電子裝置2a可包含一封裝層24,其形成於該第一線路結構20之第二側20b上,以包覆該第二電子元件22。例如,形成該封裝層24之材質係為聚醯亞胺(PI)、乾膜、環氧樹脂或封裝材等絕緣材,但並不限於上述。具體地,該封裝層24與該包覆層25之材質可相同或相異。 Furthermore, the electronic device 2a may include an encapsulation layer 24 formed on the second side 20b of the first circuit structure 20 to cover the second electronic component 22. For example, the material for forming the encapsulation layer 24 is an insulating material such as polyimide (PI), dry film, epoxy resin, or encapsulation material, but it is not limited to the above. Specifically, the materials of the encapsulation layer 24 and the encapsulation layer 25 may be the same or different.

另外,如第2D’圖所示,於設置該電子裝置2a之前,可先將該導電元件27及電子元件28設於一支撐結構8之保護膜80上,以利於翻轉,而待設置該電子裝置2a後,再移除該支撐結構8及其保護膜80。 In addition, as shown in Figure 2D', before the electronic device 2a is installed, the conductive element 27 and the electronic element 28 can be placed on the protective film 80 of a supporting structure 8 to facilitate the overturning, and the electronic device 2a is to be installed. After the device 2a is installed, the supporting structure 8 and its protective film 80 are removed.

應可理解地,有關該電子裝置2a之種類繁多,如配置有載板或封裝基板,並不限於上述。 It should be understood that there are many types of the electronic device 2a, such as a carrier board or a packaging substrate, which is not limited to the above.

如第2F圖所示,沿如第2E圖所示之切割路徑S進行切單製程,以得到電子封裝件2。 As shown in FIG. 2F, the singulation process is performed along the cutting path S shown in FIG. 2E to obtain the electronic package 2.

因此,本發明之電子封裝件2之製法係藉由該屏蔽結構29之設計,使該第一電子元件21外圍覆蓋有屏蔽層291,故該電子封裝件2於運作時,該第一電子元件21不會遭受外界或電子裝置2a(或另一電子元件28)之電磁干擾(EMI),因而該電子封裝件2的電性運作功能得以正常,避免影響整體該電子封裝件2的電性效能。 Therefore, the manufacturing method of the electronic package 2 of the present invention is based on the design of the shielding structure 29 so that the periphery of the first electronic component 21 is covered with a shielding layer 291. Therefore, when the electronic package 2 is in operation, the first electronic component 21 will not be subjected to electromagnetic interference (EMI) from the outside or the electronic device 2a (or another electronic component 28), so the electrical operation function of the electronic package 2 can be normal, so as to avoid affecting the overall electrical performance of the electronic package 2 .

再者,藉由該第一線路結構20之第一側20a與第二側20b 分別設有第一與第二電子元件21,22,以增加採用該電子封裝件2之終端產品之應用範圍,因而能符合現今終端產品之功能需求。 Furthermore, by the first side 20a and the second side 20b of the first circuit structure 20 The first and second electronic components 21 and 22 are respectively provided to increase the application range of the terminal product using the electronic package 2 so as to meet the functional requirements of the current terminal product.

又,藉由該隔離層290位於該屏蔽層291與該第一電子元件21之間,以防止該屏蔽層291之金屬離子游離至該第一電子元件21而導致該屏蔽層291電性導通該第一電子元件21之問題,故該隔離層290能有效電性隔離該屏蔽層291與該第一電子元件21,以達到絕緣效果。 In addition, the isolation layer 290 is located between the shielding layer 291 and the first electronic component 21 to prevent the metal ions of the shielding layer 291 from dissociating to the first electronic component 21, causing the shielding layer 291 to electrically conduct the Because of the problem of the first electronic component 21, the isolation layer 290 can effectively and electrically isolate the shielding layer 291 and the first electronic component 21 to achieve an insulation effect.

另外,藉由該屏蔽結構29接地該第二線路結構26之第二線路重佈層261,如第2F’圖所示,以提供更好之屏蔽效果。 In addition, the second circuit redistribution layer 261 of the second circuit structure 26 is grounded by the shielding structure 29, as shown in Figure 2F', to provide a better shielding effect.

本發明亦提供一種電子封裝件2,其包括:一第一線路結構20、一第一電子元件21、一包覆層25以及一第二線路結構26。 The present invention also provides an electronic package 2, which includes: a first circuit structure 20, a first electronic component 21, a coating layer 25 and a second circuit structure 26.

所述之第一線路結構20係具有相對之第一側20a與第二側20b,且該第一線路結構20之第一側20a上形成有複數電性連接該第一線路結構20之導電柱23。 The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other, and a plurality of conductive pillars electrically connected to the first circuit structure 20 are formed on the first side 20a of the first circuit structure 20 twenty three.

所述之第一電子元件21係藉由屏蔽結構29設於該第一線路結構20之第一側20a上,且該第一電子元件21上結合有複數導電體212。 The first electronic component 21 is arranged on the first side 20 a of the first circuit structure 20 by the shielding structure 29, and a plurality of electrical conductors 212 are combined on the first electronic component 21.

所述之包覆層25係形成於該第一線路結構20之第一側20a上,以令該包覆層25包覆該屏蔽結構29、該第一電子元件21與該些導電柱23,且令該導電柱23之端面與該導電體212之端面外露於該包覆層25。 The coating layer 25 is formed on the first side 20a of the first circuit structure 20, so that the coating layer 25 covers the shielding structure 29, the first electronic component 21 and the conductive pillars 23, The end surface of the conductive pillar 23 and the end surface of the conductor 212 are exposed to the coating layer 25.

所述之第二線路結構26係形成於該包覆層25上,且該第二線路結構26電性連接該導電柱23與該第一電子元件21之導電體212。 The second circuit structure 26 is formed on the coating layer 25, and the second circuit structure 26 is electrically connected to the conductive pillar 23 and the conductor 212 of the first electronic component 21.

於一實施例中,該屏蔽結構29係包含一設於該第一電子元 件21上之隔離層290及設於該隔離層290上之屏蔽層291,以令該第一電子元件21藉由該屏蔽層291設於該第一線路結構20之第一側20a上。 In one embodiment, the shielding structure 29 includes a first electronic element The isolation layer 290 on the component 21 and the shielding layer 291 disposed on the isolation layer 290 enable the first electronic component 21 to be disposed on the first side 20a of the first circuit structure 20 through the shielding layer 291.

於一實施例中,該第一電子元件21具有相對之作用面21a與非作用面21b,該第一電子元件21係以該非作用面21b結合該屏蔽結構29,而該作用面21a具有複數電極墊210,且該電極墊210上形成有導電體212。 In one embodiment, the first electronic component 21 has an opposite active surface 21a and a non-active surface 21b. The first electronic component 21 is combined with the shielding structure 29 with the non-active surface 21b, and the active surface 21a has a plurality of electrodes. A pad 210, and a conductive body 212 is formed on the electrode pad 210.

於一實施例中,該第二線路結構26接地該第一電子元件21及/或該屏蔽結構29。 In one embodiment, the second circuit structure 26 is grounded to the first electronic component 21 and/or the shielding structure 29.

於一實施例中,所述之電子封裝件2復包括至少一電子裝置2a,係設於該第一線路結構20之第二側20b上且電性連接該第一線路結構20。例如,該電子裝置2a係包含第二電子元件22,其設於該第一線路結構20之第二側20b上且電性連接該第一線路結構20。又,該電子裝置2a復包含一包覆該第二電子元件22之封裝層24。 In one embodiment, the electronic package 2 further includes at least one electronic device 2 a, which is disposed on the second side 20 b of the first circuit structure 20 and is electrically connected to the first circuit structure 20. For example, the electronic device 2a includes a second electronic component 22, which is disposed on the second side 20b of the first circuit structure 20 and is electrically connected to the first circuit structure 20. In addition, the electronic device 2a further includes an encapsulation layer 24 covering the second electronic component 22.

於一實施例中,所述之電子封裝件2復包括形成於該第二線路結構26上之複數導電元件27。 In one embodiment, the electronic package 2 further includes a plurality of conductive elements 27 formed on the second circuit structure 26.

於一實施例中,所述之電子封裝件2復包括設於該第二線路結構26上之另一電子元件28。 In one embodiment, the electronic package 2 further includes another electronic component 28 arranged on the second circuit structure 26.

綜上所述,本發明之電子封裝件及其製法,係藉由該屏蔽結構之配置,以於該電子封裝件運作時,能避免該第一電子元件遭受外界或電子裝置之電磁干擾,使該電子封裝件的電性功能得以正常運作。 In summary, the electronic package and its manufacturing method of the present invention are configured by the shielding structure to prevent the first electronic component from being subjected to electromagnetic interference from the outside or the electronic device when the electronic package is in operation. The electrical functions of the electronic package can operate normally.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及 範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone who is familiar with this skill can do so without departing from the spirit of the present invention and Under the scope, the above-mentioned embodiment is modified. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

2‧‧‧電子封裝件 2‧‧‧Electronic package

2a‧‧‧電子裝置 2a‧‧‧Electronic device

20‧‧‧第一線路結構 20‧‧‧The first line structure

201‧‧‧第一線路重佈層 201‧‧‧Relaying the first line

202‧‧‧絕緣保護層 202‧‧‧Insulation protection layer

20a‧‧‧第一側 20a‧‧‧First side

20b‧‧‧第二側 20b‧‧‧Second side

21‧‧‧第一電子元件 21‧‧‧The first electronic component

22‧‧‧第二電子元件 22‧‧‧Second electronic component

220‧‧‧銲線 220‧‧‧Wire

221‧‧‧結合層 221‧‧‧Combination layer

23‧‧‧導電柱 23‧‧‧Conductive post

24‧‧‧封裝層 24‧‧‧Encapsulation layer

25‧‧‧包覆層 25‧‧‧Coating

26‧‧‧第二線路結構 26‧‧‧Second line structure

27‧‧‧導電元件 27‧‧‧Conductive element

28‧‧‧電子元件 28‧‧‧Electronic components

29‧‧‧屏蔽結構 29‧‧‧Shielding structure

290‧‧‧隔離層 290‧‧‧Isolation layer

291‧‧‧屏蔽層 291‧‧‧Shielding layer

Claims (20)

一種電子封裝件,係包括:第一線路結構,係具有相對之第一側與第二側,且該第一側上形成有複數電性連接該第一線路結構之導電柱;第一電子元件,係藉由屏蔽結構設於該第一線路結構之第一側上;包覆層,係形成於該第一線路結構之第一側上,以包覆該屏蔽結構、該第一電子元件與該導電柱,且令該第一電子元件之部分表面與該導電柱之端面外露出該包覆層;以及第二線路結構,係形成於該包覆層上且電性連接該導電柱與該第一電子元件。 An electronic package includes: a first circuit structure having a first side and a second side opposite to each other, and a plurality of conductive pillars electrically connected to the first circuit structure are formed on the first side; a first electronic element , Is provided on the first side of the first circuit structure by a shielding structure; a coating layer is formed on the first side of the first circuit structure to cover the shielding structure, the first electronic component and The conductive pillar, and the covering layer is exposed from part of the surface of the first electronic component and the end surface of the conductive pillar; and the second circuit structure is formed on the covering layer and electrically connects the conductive pillar and the conductive pillar The first electronic component. 如申請專利範圍第1項所述之電子封裝件,其中,該屏蔽結構係包含一設於該第一電子元件上之隔離層及設於該隔離層上之屏蔽層,以令該第一電子元件藉由該屏蔽層設於該第一線路結構之第一側上。 For the electronic package described in item 1 of the scope of patent application, the shielding structure includes an isolation layer provided on the first electronic component and a shielding layer provided on the isolation layer, so that the first electronic The element is arranged on the first side of the first circuit structure through the shielding layer. 如申請專利範圍第1項所述之電子封裝件,其中,該第一電子元件具有相對之作用面與非作用面,該第一電子元件係以該非作用面結合該屏蔽結構,該作用面具有複數電極墊,且該電極墊上形成有導電體。 According to the electronic package described in item 1 of the scope of the patent application, wherein the first electronic component has an opposite active surface and a non-active surface, the first electronic component is combined with the shielding structure with the non-active surface, and the active surface has A plurality of electrode pads, and conductors are formed on the electrode pads. 如申請專利範圍第3項所述之電子封裝件,其中,該導電體之端面係外露於該包覆層。 The electronic package described in item 3 of the scope of patent application, wherein the end surface of the conductor is exposed on the coating layer. 如申請專利範圍第1項所述之電子封裝件,其中,該第二線路結構接地該第一電子元件及/或該屏蔽結構。 The electronic package described in item 1 of the scope of patent application, wherein the second circuit structure is grounded to the first electronic component and/or the shielding structure. 如申請專利範圍第1項所述之電子封裝件,復包括電子裝置,係設於該第一線路結構之第二側上且電性連接該第一線路結構。 The electronic package described in item 1 of the scope of the patent application includes an electronic device, which is arranged on the second side of the first circuit structure and is electrically connected to the first circuit structure. 如申請專利範圍第6項所述之電子封裝件,其中,該電子裝置係包含第二電子元件,其設於該第一線路結構之第二側上且電性連接該第一線路結構。 According to the electronic package described in item 6 of the scope of patent application, the electronic device includes a second electronic element which is arranged on the second side of the first circuit structure and is electrically connected to the first circuit structure. 如申請專利範圍第7項所述之電子封裝件,其中,該電子裝置復包含包覆該第二電子元件之封裝層。 The electronic package described in item 7 of the scope of patent application, wherein the electronic device further includes an encapsulation layer covering the second electronic component. 如申請專利範圍第1項所述之電子封裝件,復包括形成於該第二線路結構上之複數導電元件。 The electronic package described in item 1 of the scope of the patent application includes a plurality of conductive elements formed on the second circuit structure. 如申請專利範圍第1項所述之電子封裝件,復包括設於該第二線路結構上之另一電子元件。 The electronic package described in item 1 of the scope of patent application includes another electronic component arranged on the second circuit structure. 一種電子封裝件之製法,係包括:提供一具有相對之第一側與第二側之第一線路結構;形成複數電性連接該第一線路結構之導電柱於該第一側上,且藉由屏蔽結構設置第一電子元件於該第一線路結構之第一側上;形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該屏蔽結構、該第一電子元件與該導電柱,且令該第一電子元件之部分表面與該導電柱之端面外露出該包覆層;以及形成第二線路結構於該包覆層上,且令該第二線路結構電性連接該導電柱與該第一電子元件。 A manufacturing method of an electronic package includes: providing a first circuit structure with opposite first and second sides; forming a plurality of conductive posts electrically connected to the first circuit structure on the first side, and by The first electronic component is arranged on the first side of the first circuit structure by the shielding structure; a coating layer is formed on the first side of the first circuit structure so that the coating layer covers the shielding structure and the first side An electronic element and the conductive pillar, and make part of the surface of the first electronic element and the end surface of the conductive pillar expose the cladding layer; and form a second circuit structure on the cladding layer, and make the second circuit The structure electrically connects the conductive pillar and the first electronic component. 如申請專利範圍第11項所述之電子封裝件之製法,其中,該屏蔽結構係包含一設於該第一電子元件上之隔離層及設於該隔離層上之屏蔽層,以令該第一電子元件藉由該屏蔽層設於該第一線路結構之第一側上。 For example, the manufacturing method of the electronic package described in item 11 of the scope of patent application, wherein the shielding structure includes an isolation layer provided on the first electronic component and a shielding layer provided on the isolation layer, so that the second An electronic component is arranged on the first side of the first circuit structure through the shielding layer. 如申請專利範圍第11項所述之電子封裝件之製法,其中,該第一電子元件具有相對之作用面與非作用面,該第一電子元件係以該非作用面結合該屏蔽結構,該作用面具有複數電極墊,且該電極墊上形成有導電體。 The method for manufacturing an electronic package as described in item 11 of the scope of patent application, wherein the first electronic component has an opposite active surface and a non-active surface, the first electronic component is combined with the shielding structure with the non-active surface, and the function The surface has a plurality of electrode pads, and a conductor is formed on the electrode pads. 如申請專利範圍第13項所述之電子封裝件之製法,其中,該導電體之端面係外露出該包覆層。 The manufacturing method of the electronic package as described in item 13 of the scope of patent application, wherein the end surface of the conductor is exposed outside of the coating layer. 如申請專利範圍第11項所述之電子封裝件之製法,其中,該第二線路結構接地該第一電子元件及/或該屏蔽結構。 The method for manufacturing an electronic package as described in item 11 of the scope of patent application, wherein the second circuit structure is grounded to the first electronic component and/or the shielding structure. 如申請專利範圍第11項所述之電子封裝件之製法,復包括設置電子裝置於該第一線路結構之第二側上,且令該電子裝置電性連接該第一線路結構。 The manufacturing method of the electronic package described in item 11 of the scope of the patent application further includes disposing an electronic device on the second side of the first circuit structure, and electrically connecting the electronic device to the first circuit structure. 如申請專利範圍第16項所述之電子封裝件之製法,其中,該電子裝置係包含第二電子元件,其形成於該第一線路結構之第二側上且電性連接該第一線路結構。 The method for manufacturing an electronic package as described in claim 16, wherein the electronic device includes a second electronic element formed on the second side of the first circuit structure and electrically connected to the first circuit structure . 如申請專利範圍第17項所述之電子封裝件之製法,其中,該電子裝置復包含包覆該第二電子元件之封裝層。 According to the method for manufacturing an electronic package described in claim 17, wherein the electronic device further includes an encapsulation layer covering the second electronic component. 如申請專利範圍第11項所述之電子封裝件之製法,復包括形成複數導電元件於該第二線路結構上。 The manufacturing method of the electronic package described in item 11 of the scope of patent application includes forming a plurality of conductive elements on the second circuit structure. 如申請專利範圍第11項所述之電子封裝件之製法,復包括設置另一電子元件於該第二線路結構上。 For example, the manufacturing method of the electronic package described in item 11 of the scope of the patent application includes arranging another electronic component on the second circuit structure.
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