TW202106847A - Synthetic grinding stone - Google Patents
Synthetic grinding stone Download PDFInfo
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- TW202106847A TW202106847A TW109120902A TW109120902A TW202106847A TW 202106847 A TW202106847 A TW 202106847A TW 109120902 A TW109120902 A TW 109120902A TW 109120902 A TW109120902 A TW 109120902A TW 202106847 A TW202106847 A TW 202106847A
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- abrasive
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- synthetic
- wafer
- spherical filler
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- 238000000227 grinding Methods 0.000 title claims abstract description 19
- 239000004575 stone Substances 0.000 title claims abstract description 5
- 239000000945 filler Substances 0.000 claims abstract description 29
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 20
- 239000011230 binding agent Substances 0.000 claims abstract description 6
- 229910021485 fumed silica Inorganic materials 0.000 claims abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 6
- 239000000741 silica gel Substances 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000001913 cellulose Substances 0.000 claims abstract description 3
- 229920002678 cellulose Polymers 0.000 claims abstract description 3
- 239000007779 soft material Substances 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000007767 bonding agent Substances 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 3
- 238000005498 polishing Methods 0.000 abstract description 13
- 239000003795 chemical substances by application Substances 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000011163 secondary particle Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
發明領域 本發明是有關於一種用以對矽晶圓等被削物之表面進行研磨加工的合成磨石。Invention field The present invention relates to a synthetic grindstone used to grind the surface of a silicon wafer and other workpieces.
背景技術 半導體製造領域中,構成半導體元件基板的矽晶圓之表面加工,一般會將已將矽單晶鑄錠切片的晶圓,經由研光步驟、蝕刻步驟、拋光步驟等數階段之步驟精加工成鏡面。在研光步驟中獲得平行度、平坦度等尺寸精度、形狀精度。接著,在蝕刻步驟中去除於研光步驟中產生的加工變質層。再者,於拋光步驟中,藉由化學機械研磨(以下稱作「CMP」),形成在維持良好形狀精度後具有鏡面等級之表面粗糙度的晶圓。又,與此同等的拋光步驟,亦可運用在去除半導體後段步驟中被稱作背磨的磨削加工之損傷時。Background technique In the field of semiconductor manufacturing, the surface processing of the silicon wafer that constitutes the substrate of the semiconductor device generally involves the finishing of the wafer that has been sliced into the silicon single crystal ingot through several stages such as polishing step, etching step, and polishing step. Mirror surface. In the polishing step, dimensional accuracy and shape accuracy such as parallelism and flatness are obtained. Next, in the etching step, the processed deterioration layer generated in the polishing step is removed. Furthermore, in the polishing step, chemical mechanical polishing (hereinafter referred to as "CMP") is used to form a wafer with mirror-grade surface roughness while maintaining good shape accuracy. In addition, the same polishing step can also be used to remove the damage of the grinding process called back grinding in the subsequent step of the semiconductor.
近年來運用的方法是進行利用乾式化學機械磨削(以下稱作「CMG」)的表面加工以取代拋光步驟(例如參照專利文獻1)。CMG步驟中使用已藉由硬質樹脂等樹脂結合劑將研磨劑(磨粒)固定化的合成磨石。又,一邊使晶圓及合成磨石旋轉,一邊將合成磨石按壓於晶圓上(例如參照專利文獻2)。晶圓表面之凸部會藉由與合成磨石之摩擦而被加熱、氧化然後變脆並剝落。如此一來,只有晶圓之凸部會被磨削並且平坦化。The method used in recent years is to perform surface processing using dry chemical mechanical grinding (hereinafter referred to as "CMG") instead of the polishing step (for example, refer to Patent Document 1). In the CMG step, a synthetic grindstone in which an abrasive (abrasive grain) has been immobilized with a resin bond such as a hard resin is used. In addition, while rotating the wafer and the synthetic grindstone, the synthetic grindstone is pressed against the wafer (for example, refer to Patent Document 2). The protrusions on the wafer surface are heated, oxidized, and then become brittle and peel off by friction with the synthetic grindstone. In this way, only the convex part of the wafer will be ground and flattened.
合成磨石之主成分在例如被削物為矽晶圓時,會運用氧化鈰或二氧化矽這些氧化物作為研磨劑。又,樹脂結合劑除了酚樹脂或環氧樹脂這些熱硬化性樹脂外,也會運用高耐熱性的熱塑性樹脂。When the main component of the synthetic grindstone is a silicon wafer, for example, oxides such as cerium oxide or silicon dioxide are used as abrasives. In addition to thermosetting resins such as phenol resins and epoxy resins, resin binders also use thermoplastic resins with high heat resistance.
先前技術文獻 專利文獻 專利文獻1:日本專利4573492號公報 專利文獻2:日本特開2004-87912號公報Prior art literature Patent literature Patent Document 1: Japanese Patent No. 4573492 Patent Document 2: Japanese Patent Application Publication No. 2004-87912
發明概要 發明欲解決之課題 上述合成磨石會有以下問題。即,若進行CMG步驟,則研磨劑會從合成磨石之對被削物的研磨作用面一點一點地脫落,研磨作用面會逐漸變得平滑。因此,研磨作用面上樹脂結合劑與被削物之接觸機會增加,其結果為研磨劑與被削材間的接觸壓力降低,加工效率明顯降低,另一方面,尤其是在以加工率之提升為目標而進行乾式加工時,摩擦熱會變得過大,會有產生燒傷或捲入研磨汙泥所致之刮痕的問題。Summary of the invention The problem to be solved by the invention The above-mentioned synthetic grindstone has the following problems. That is, if the CMG step is performed, the abrasive will drop little by little from the grinding surface of the synthetic grindstone on the workpiece, and the grinding surface will gradually become smooth. Therefore, the chance of contact between the resin bond and the workpiece on the polishing surface increases. As a result, the contact pressure between the abrasive and the workpiece is reduced, and the processing efficiency is significantly reduced. On the other hand, especially when the processing rate is increased When dry processing is performed for the purpose, the frictional heat will become too large, and there will be a problem of burns or scratches caused by being involved in the grinding sludge.
故,本發明是為解決上述課題而成者,目的在提供一種合成磨石,該合成磨石即便持續進行加工,亦可充分地維持研磨劑與被削物之接觸壓力而維持加工效率,並且將樹脂結合劑與被削物之接觸面積抑制在一定值以下,藉此可防止被削物面之品質降低及刮痕的產生。Therefore, the present invention was made in order to solve the above-mentioned problems, and its object is to provide a synthetic grindstone that can sufficiently maintain the contact pressure between the abrasive and the workpiece to maintain the processing efficiency even if the processing is continued, and The contact area between the resin bond and the workpiece is suppressed below a certain value, thereby preventing the quality of the workpiece surface from degrading and the generation of scratches.
用以解決課題之手段 本實施形態之合成磨石具備:研磨劑,其對前述被削材具有化學機械磨削作用,且平均粒徑小於5μm;球狀填充劑,其平均粒徑大於前述研磨劑;及樹脂結合劑,其一體性結合前述研磨劑與前述球狀填充劑。Means to solve the problem The synthetic grindstone of this embodiment includes: an abrasive, which has a chemical-mechanical grinding effect on the aforementioned material to be cut, and has an average particle size of less than 5μm; a spherical filler with an average particle size larger than the foregoing abrasive; and a resin bond , It integrally combines the aforementioned abrasive and the aforementioned spherical filler.
發明效果 即便持續進行加工,亦可充分地維持研磨劑與被削物之接觸壓力而維持加工效率,並且將樹脂結合劑與被削物之接觸面積抑制在一定值以下,藉此可防止被削物面之品質降低及刮痕的產生。Invention effect Even if the processing is continued, the contact pressure between the abrasive and the workpiece can be sufficiently maintained to maintain the processing efficiency, and the contact area between the resin bond and the workpiece can be suppressed below a certain value, thereby preventing the surface of the workpiece The quality is reduced and scratches are generated.
用以實施發明之形態
圖1~圖4所示者為本發明一實施形態。另,該等圖中,W表示成為磨削對象的矽晶圓(被削物)。如圖1所示,CMG裝置10具備:旋轉平台機構20,其支持晶圓W;及磨石支持機構30,其支持後述合成磨石100。CMG裝置10構成晶圓處理裝置的一部分。於CMG裝置10中,晶圓W可利用搬送機器人等搬入、搬出。The form used to implement the invention
Figures 1 to 4 show an embodiment of the present invention. In these figures, W denotes a silicon wafer (a workpiece) to be ground. As shown in FIG. 1, the
旋轉平台機構20具備:平台馬達21,其配置於地面上;平台軸22,其自該平台馬達21朝上方突出而配置;及平台23,其安裝於該平台軸22之上端。平台23具有將磨削對象之晶圓W保持為可自由裝卸的機構。保持機構例如包括真空吸附機構。The rotating platform mechanism 20 includes a
磨石支持機構30具備:架台31,其配置於地面上,同時於內部收納有馬達;垂直方向之搖動軸32,其支持於該架台31上,並利用架台31內的馬達朝圖1中箭頭方向搖動;臂部33,其設置於該搖動軸32之上端,並朝水平方向延伸設置;及磨石驅動機構40,其設置於該臂部33之前端側。The
磨石驅動機構40具備旋轉馬達部41。旋轉馬達部41具備朝下方突出的旋轉軸42。於旋轉軸42之前端部安裝有圓環狀之輪保持構件43。於輪保持構件43上,如圖2所示,圓環狀之合成磨石100安裝成可自由裝卸。裝設合成磨石100時,從輪保持構件43側將螺栓擰入已設置於合成磨石100的螺孔來裝設。The
如圖3所示,合成磨石100係將0.2~50體積%的研磨劑101、20~60體積%的球狀填充劑102及3~25體積%的樹脂結合劑103利用下述體積比率來形成。另,球狀填充劑102之形狀未必限於球體,若為塊狀,則包含些許凹凸或變形。As shown in Figure 3, the
研磨劑101例如使用粒徑20nm以下的煙化二氧化矽(fumed silica)。另,所謂粒徑,意指球等效直徑下的中位直徑D50。又,研磨劑101之粒徑宜小於5μm。For the abrasive 101, fumed silica having a particle size of 20 nm or less is used, for example. In addition, the so-called particle diameter means the median diameter D50 under the equivalent diameter of the sphere. In addition, the particle size of the
在此,針對雖然使用粒徑20nm以下的煙化二氧化矽、但卻將研磨劑101之粒徑上限值規定為小於5μm的理由進行說明。即,微粒子在已分散於液中之狀態下的一次粒子以及已於大氣中或固體中凝集之狀態下的二次粒子,其粒徑大不相同。例如上述煙化二氧化矽,一次粒子為10~20nm,但二次粒子卻成為0.1~0.5μm左右。因此,當規定研磨劑之粒徑上限值時,宜考慮一次粒子與二次粒子兩者混雜之情形,以二次粒子之粒徑上限值來規定。另一方面,微粒子除了煙化二氧化矽外,如後述還具有各式種類(氧化鈰、氧化鉻、氧化鐵、氧化鋁、碳化矽等),可根據其二次粒子之粒徑來訂定上限值。Here, although fumed silica having a particle size of 20 nm or less is used, the reason for setting the upper limit of the particle size of the
又,在粒徑成為1μm以下的次微米粒子之情形時,研磨劑101之體積比率亦可為0.2~1%。球狀填充劑102使用粒徑20μm的球狀矽膠。另,球狀矽膠為二氧化矽之多孔質體。樹脂結合劑103例如使用酚樹脂或乙基纖維素。若將依此形成的合成磨石100利用電子顯微鏡來放大顯示,則會成為如圖4所示。In addition, when the particle size is a submicron particle of 1 μm or less, the volume ratio of the
合成磨石100是將上述比率之研磨劑101、球狀填充劑102、樹脂結合劑103溶於MEK(甲基乙基酮)溶劑中,攪拌後於大氣中乾燥。將乾燥後之物質進行粉碎而作成粉體,並將該粉體填充於模具中,於180℃下加壓成型而形成。研磨劑101及樹脂結合劑103會形成母材M,並形成球狀填充劑102分散於該母材M內的狀態。另,亦可調整樹脂結合劑103之結合度,抑或為了提升組織分散性而加入比研磨劑101更細小的粒子或線徑小的纖維質。The
又,相對於以矽作為主成分的晶圓W,由煙化二氧化矽構成的研磨劑101係與晶圓或其氧化物同等或軟質。又,相對於研磨劑101,由球狀矽膠構成的球狀填充劑102係與晶圓或其氧化物同質或軟質。再者,相對於研磨劑101,由纖維素構成的樹脂結合劑103為同質或軟質。In addition, with respect to the wafer W having silicon as the main component, the abrasive 101 made of fumed silicon dioxide is equivalent to or softer than the wafer or its oxide. In addition, with respect to the abrasive 101, the
另,上述合成磨石100中的體積比率如下述般來決定。即,若研磨劑101小於0.2體積%,則加工效率降低,若大於50體積%,則磨石之成型會變得困難。故,研磨劑101之體積比宜為0.2~50%。In addition, the volume ratio in the
又,當球狀填充劑102小於20體積%時,會有防止磨面平滑化之效果薄弱的問題。若球狀填充劑102之體積比率變大,則可高度維持加工效率,同時能防止晶圓W之品質降低及刮痕產生的效果大,因此宜為30體積%以上。然而,若大於60體積%,則磨石成型會變得困難。故,球狀填充劑102之體積比宜為20~60%,若為50~60%則更為理想。In addition, when the
再者,樹脂結合劑103若其比率減少,則加工效率提升,但若小於3體積%,則成型會變得困難,合成磨石100之磨損速度加快。若樹脂結合劑103大於25體積%,則磨石結合度會大幅上升,加工中的磨損消失,因此,即便有前述球狀填充劑,亦容易產生磨面平滑化。故,樹脂結合劑103之體積比宜為3~25體積%。Furthermore, if the ratio of the
依此構成的合成磨石100會安裝於CMG裝置10,並如下述般來磨削晶圓W。即,將合成磨石100安裝於輪保持構件43上。接著,利用搬送機器人將晶圓W安裝於平台23上。The
其次,驅動平台馬達21,使平台23朝圖1中箭頭方向旋轉。又,驅動旋轉馬達部41,使輪保持構件43及合成磨石100朝圖1中箭頭方向旋轉。例如使合成磨石100以600m/min之周速旋轉,同時以加工壓力300g/cm2
朝晶圓W側按壓。再者,使搖動軸32朝圖1中箭頭方向搖動。藉由該等連動,合成磨石100與晶圓W會滑動。Next, the
圖3中顯示此時的合成磨石100與晶圓W之關係。球狀填充劑102之平均粒徑大於研磨劑101,因此,加工中的合成磨石100與晶圓W幾乎透過球狀填充劑102之頂點來接觸。即,於合成磨石100之母材M與晶圓W間存在有球狀填充劑102,因此,母材M與晶圓W不會直接接觸,並且產生一定之間隙S。FIG. 3 shows the relationship between the
若於球狀填充劑102與晶圓W接觸的狀態下開始加工,則外力會作用於母材M。在該外力連續作用下,樹脂結合劑103會鬆弛,研磨劑101會從母材M脫落。已游離的研磨劑101於合成磨石100與晶圓W之間隙中會以吸附於球狀填充劑102的狀態存在於加工界面。故,加工中的研磨劑101與晶圓W幾乎是透過球狀填充劑102之頂點來接觸。因此,研磨劑101與晶圓W的實際接觸面積會大幅縮小,在加工點的作用壓力提高。故,可於高加工效率下進行磨削加工。If the processing is started in a state where the
另一方面,藉由間隙S,可促進晶圓W表面附近的空氣與外部空氣之循環,加工面會冷卻。又,因研磨劑101而產生的汙泥透過間隙S自晶圓W排出至外部,可防止晶圓W表面損傷。其結果,可防止摩擦熱所致晶圓W表面之燒傷或刮痕。On the other hand, the gap S can promote the circulation of the air near the surface of the wafer W and the outside air, and the processed surface will be cooled. In addition, the sludge generated by the abrasive 101 is discharged from the wafer W to the outside through the gap S, and damage to the surface of the wafer W can be prevented. As a result, it is possible to prevent burns or scratches on the surface of the wafer W caused by frictional heat.
如此一來,利用合成磨石100,將晶圓W之表面磨削成平坦且具有預定表面粗糙度。In this way, the
如上述,依據本實施形態之合成磨石100,即便持續進行加工,亦可充分地維持研磨劑101與晶圓W之接觸壓力而維持加工效率,並且抑制樹脂結合劑103與晶圓W之直接接觸,藉此可防止晶圓W之品質降低及刮痕的產生。As described above, according to the
另,構成合成磨石100的材料並不限於上述材料。即,作為研磨劑101,在被削材為矽時,可應用二氧化矽或氧化鈰,在被削材為藍寶石時,則可應用氧化鉻、氧化鐵。此外,作為具有可應用性的研磨劑,亦可依照被削材之種類而使用氧化鋁、碳化矽。In addition, the material constituting the
球狀填充劑102可應用二氧化矽、碳以及屬於該等之多孔質體的矽膠、活性碳等。另,被運用作為氣孔形成劑的空心體氣球會在加工中破裂而成為刮痕的原因,因此並不適合。The
樹脂結合劑103除了酚樹脂、環氧樹脂這些熱硬化性樹脂外,亦可應用像是乙基纖維素這類熱塑性樹脂。在熱塑性樹脂之情形時,只要是軟化點較高到120℃以上且拉伸度少者,便可加以使用。In addition to thermosetting resins such as phenol resin and epoxy resin, the
另,本發明並不限於上述實施形態,實施階段中可於未脫離其要旨之範圍內進行各種變形。又,各實施形態亦可適當地組合而實施,在此情形下可獲得組合效果。再者,上述實施形態中包含有各種發明,藉由選自於所揭示複數個構成要件之組合,可取出各種發明。舉例言之,即便自實施形態所示全體構成要件中刪除數個構成要件,亦可解決課題並獲得效果時,已刪除該構成要件的構造便可取出作為發明。In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the scope of the implementation stage. In addition, each of the embodiments can be appropriately combined and implemented, and in this case, a combined effect can be obtained. Furthermore, various inventions are included in the above-mentioned embodiment, and various inventions can be taken out by a combination selected from a plurality of constituent elements disclosed. For example, even if several constituent elements are deleted from the entire constituent elements shown in the embodiment, when the problem can be solved and the effect is obtained, the structure in which the constituent elements have been deleted can be taken out as an invention.
10:CMG裝置 20:旋轉平台機構 21:平台馬達 22:平台軸 23:平台 30:磨石支持機構 31:架台 32:搖動軸 33:臂部 40:磨石驅動機構 41:旋轉馬達部 42:旋轉軸 43:輪保持構件 100:合成磨石 101:研磨劑 102:球狀填充劑 103:樹脂結合劑 M:母材 S:間隙 W:晶圓10: CMG device 20: Rotating platform mechanism 21: Platform motor 22: Platform axis 23: platform 30: Grinding Stone Support Organization 31: stand 32: Shake the axis 33: Arm 40: Grindstone drive mechanism 41: Rotating motor part 42: Rotation axis 43: Wheel holding member 100: synthetic grindstone 101: Abrasive 102: spherical filler 103: Resin bond M: base material S: gap W: Wafer
圖1是顯示已裝入本發明一實施形態之合成磨石的CMG裝置之立體圖。 圖2是顯示該合成磨石的立體圖。 圖3是顯示該合成磨石之構造的說明圖。 圖4是利用電子顯微鏡放大顯示該合成磨石的說明圖。Fig. 1 is a perspective view showing a CMG device into which a synthetic grindstone according to an embodiment of the present invention has been incorporated. Fig. 2 is a perspective view showing the synthetic grindstone. Fig. 3 is an explanatory diagram showing the structure of the synthetic grindstone. Fig. 4 is an explanatory diagram showing the synthetic grindstone enlarged by an electron microscope.
100:合成磨石 100: synthetic grindstone
101:研磨劑 101: Abrasive
102:球狀填充劑 102: spherical filler
103:樹脂結合劑 103: Resin bond
M:母材 M: base material
S:間隙 S: gap
W:晶圓 W: Wafer
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JPH10166258A (en) * | 1996-12-06 | 1998-06-23 | Tadahiro Omi | Abrasive material composition |
US6394888B1 (en) * | 1999-05-28 | 2002-05-28 | Saint-Gobain Abrasive Technology Company | Abrasive tools for grinding electronic components |
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