JP7258385B1 - Synthetic whetstone, synthetic whetstone assembly, and synthetic whetstone manufacturing method - Google Patents

Abstract

[PROBLEMS] To provide a synthetic whetstone capable of suppressing excessive frictional heat when, for example, dry polishing is performed. SOLUTION: A synthetic whetstone for surface processing comprises abrasive grains with an abrasive grain ratio (Vg) of greater than 0 volume % and 40 volume percent or less, and a binder ratio (Vb) of 35 volume percent or more. and a non-woven binder that is not more than 90% by volume. The synthetic whetstone has a porosity (Vp) of 10% by volume or more and 55% by volume or less. [Selection drawing] Fig. 3

Description

The present invention relates to synthetic wheels for surface processing, such as chemical mechanical grinding (CMG), synthetic wheel assemblies, and methods of making synthetic wheels.

A method of performing surface processing by dry chemical mechanical grinding (CMG) may be used (see, for example, Patent Document 1). In the CMG process, a synthetic whetstone in which abrasives (abrasive grains) are fixed with a resin binder such as a thermoplastic resin is used. Then, while rotating the wafer and the synthetic whetstone, the synthetic whetstone is pressed against the wafer (see Patent Document 2, for example). Protrusions on the wafer surface are heated and oxidized by friction with the synthetic grindstone, becoming brittle and falling off. In this way, only the convex portions of the wafer are ground and flattened.

Japanese Patent No. 4573492 JP-A-2004-87912

As the synthetic whetstone progresses through the CMG process, for example, the abrasive grains (abrasive) gradually fall off from the surface of the bonding agent for the workpiece (polishing surface) of the synthetic whetstone, and the polishing surface of the synthetic whetstone becomes smooth. . For this reason, on the polishing work surface, there are more chances of contact between the binder made of, for example, a thermoplastic resin and the workpiece. As a result, the contact pressure between the abrasive grains and the work piece decreases, which reduces the machining efficiency. Excessive heat can cause the workpiece to burn or scratch due to entrainment of abrasive sludge.

The present invention has been made to solve the above problems, and provides a synthetic whetstone, a synthetic whetstone assembly, and a synthetic whetstone capable of suppressing excessive frictional heat during dry polishing, for example. It aims at providing the manufacturing method of.

According to one aspect of the present invention, the synthetic whetstone for surface processing has an abrasive grain ratio (Vg) of greater than 0 vol% and 40 vol% or less, and an abrasive grain and binder ratio (Vb) of 35% by volume or more and less than 90% by volume of a nonwoven binder. The porosity (Vp) of the synthetic whetstone is more than 10% by volume and 55% by volume or less.

According to the present invention, it is possible to provide a synthetic whetstone, a synthetic whetstone assembly, and a method for manufacturing a synthetic whetstone that can suppress excessive frictional heat when performing dry polishing, for example.

Schematic of the structure of the synthetic whetstone according to the embodiment. Schematic diagram showing a manufacturing flow (manufacturing method) of a synthetic whetstone (molding). 3 is a three-phase diagram of three elements (abrasive grain ratio (Vg), binder ratio (Vb), porosity (Vp)) of a synthetic whetstone when a non-woven fabric type synthetic whetstone is manufactured. Measured hardness of the synthetic whetstone at each point corresponding to FIG. FIG. 4 is a schematic diagram showing the boundaries of whether or not the non-woven fabric type synthetic whetstone shown in FIG. 3 can be manufactured. Schematic diagram showing a CMG apparatus used for machining a workpiece.

As shown in FIG. 1 , the synthetic whetstone 100 is made up of abrasive grains (abrasive) 101 and a binding agent (binder) 102 . The synthetic whetstone 100 may further have pores 103 . In the present embodiment, the synthetic whetstone 100 holds the abrasive grains 101 dispersed in the binder 102 and also disperses the pores 103 in the binder 102 .

The abrasive grains 101 are not limited to the following, but when the workpiece is silicon, it is preferable to apply silica, cerium oxide, or a mixture thereof, for example. Similarly, if the workpiece is sapphire, it is preferable to apply chromium oxide, ferric oxide, or mixtures thereof. In addition, alumina, silicon carbide, or a mixture thereof can also be used as applicable abrasives, depending on the type of work to be cut.

In this embodiment, it is assumed that the material to be cut is silicon, and as the abrasive grains 101, for example, cerium oxide having an average grain size of approximately 1 μm is used. Although the particle diameter of the abrasive grains 101 can be set appropriately, it is preferably less than 5 μm, for example.

As the binder 102, a nonwoven fabric is used in this embodiment. Polyester short fibers can be used as an example of the nonwoven fabric. As polyester short fibers, for example, polyethylene terephthalate (PET) short fibers can be used.

The synthetic whetstone (molded body) 100 is formed based on the flow (manufacturing method) shown in FIG.
First, the abrasive grains 101 shown in FIG. 3 having the volume ratio described later and the short fiber binder 102 for forming the nonwoven fabric are mixed to obtain a mixed material (mixed powder) (step ST1). When viewed without enlarging the binder 102 here, it is, for example, substantially powdery.
Next, this mixed material is filled into a mold for forming the final shape of the synthetic whetstone 100 (step ST2). At this time, the fibers can be accumulated using a dry method, a wet method, or other methods. For example, pressure molding (hot pressing) is performed at 170° C. for 30 minutes to mold the synthetic whetstone 100 as a molding (step ST3). Then, the molded body in the mold is demolded (step ST4).

FIG. 3 shows the so-called three elements (abrasive grain ratio (Vg), binder ratio (Vb), porosity (Vp)) of the synthetic whetstone 100 when the non-woven fabric type synthetic whetstone 100 is manufactured as described above. A three-phase diagram is shown.

3 to 5, experimental results (19 point). Through this experiment, the boundaries of whether or not the synthetic whetstone 100 can be manufactured were formed. When the synthetic whetstone 100 had a composition inside the boundary shown in FIG. 5, it could be used as the synthetic whetstone 100 .

Of the 19 points, 13 points were formed as synthetic whetstones 100 that could withstand use. The range of the 13 points is the range of the abrasive grain ratio (Vg) of the abrasive grains in the range of 0 volume% to 40 volume%, the binder ratio (Vb) in the range of 35 volume% to 90 volume%, and the number of pores The porosity (Vp) was 10% by volume or more and 55% by volume or less. 3 to 5 show that the synthetic whetstone 100 was shaped even when the abrasive grain ratio was 0% by volume. When the abrasive grain ratio is 0 volume %, the synthetic whetstone 100 does not contain the abrasive grains 101 , so the abrasive grain ratio of the synthetic whetstone 100 is actually higher than 0 volume %. In this embodiment, for the synthetic whetstone 100, the abrasive grain ratio (Vg) of the whetstone 101 is first determined, and then the binder ratio (Vb) of the binder 102 is set.

Durometer hardness measurement (ASTM D 2240-05 Type DO) was performed on 13 points that could be used as the synthetic whetstone 100 . FIG. 4 shows hardness measurement values of the synthetic whetstone 100 at respective points corresponding to FIG. As shown in FIGS. 3 to 5, the synthetic grindstone 100 becomes relatively soft when the porosity is high, and relatively hard when the porosity is low.

In addition, hereinafter, the six points that did not form the synthetic whetstone 100 will be referred to as molded bodies. The remaining 6 points out of the 19 points had compositions outside the boundary shown in FIG. The molded body outside the boundary shown in FIG. 5 has a high porosity and a low packing density in the area indicated by the arrow α. For this reason, it is assumed that the bonding of the binder was insufficient in the molded body, resulting in the corners and surface of the molded body being greatly crumbled. The molded body outside the boundary shown in FIG. 5 has a low porosity and a sufficient packing density in the region indicated by the arrow β. However, it is assumed that the binder ratio was low and the surface of the molded body became powdery. It is assumed that the molded body outside the boundary shown in FIG. 5 has too low porosity and too high packing density in the region of arrow γ. As a result, the molded product did not have the specified dimensions during molding.
If the abrasive grain ratio is too high, it is assumed that the bonding will not occur, resulting in the collapse of the compact. As described above, the abrasive content is preferably greater than 0% by volume and 40% by volume or less, for example.

Thus, it can be seen that the synthetic whetstone 100 using the non-woven fabric as a binder can be molded only by setting the abrasive grain ratio, the binder ratio, and the porosity within a predetermined range by volume.

In the present embodiment, the synthetic whetstone 100 is formed in a disc shape and is used for dry chemical mechanical grinding (CMG) processing by a combined action of mechanical action and chemical components. That is, the synthetic grindstone 100 exerts a dry chemical mechanical grinding action on the surface of the wafer W, which is an object to be ground, and processes the surface of the wafer W, which is an object to be ground. Then, the synthetic whetstone 100 is fixed to a whetstone holding member (substrate) 43 with a double-sided tape, an adhesive, or the like to form a synthetic whetstone assembly 200, which is attached to the CMG apparatus 10 shown in FIG. Used for W surface processing. The grindstone holding member 43 may be any material as long as it has appropriate rigidity to withstand CMG processing, has heat resistance at temperatures that may rise due to the use of the synthetic grindstone 100, and does not thermally soften. Used.

A synthetic whetstone assembly 200 having a whetstone holding member 43 and a synthetic whetstone 100 and a wafer W as a workpiece are rotated in the direction of the arrow in FIG. At this time, the synthetic grindstone 100 is rotated at a peripheral speed of, for example, 600 m/min, and the wafer W is pressed with a processing pressure of 300 g/cm ² . Therefore, the synthetic grindstone 100 and the surface of the wafer W slide. When processing is started in this manner, the synthetic grindstone 100 slides on the surface of the wafer W, and an external force acts on the bonding agent 102 . When this external force is continuously applied, the surface of the wafer W is polished by the chemical and mechanical action of the fixed abrasive grains 101 held in the nonwoven fabric or the abrasive grains 101 that are shed from the fixed abrasive grains.

In this embodiment, a non-woven fabric is used as the binder 102 instead of using a thermoplastic resin material (eg, ethyl cellulose) as the binder. Therefore, the amount of elastic deformation of the binder 102 can be made larger than when a thermoplastic resin material is used as the binder. Therefore, the synthetic grindstone 100 according to the present embodiment has excellent followability to the surface of the wafer W, which is a workpiece (workpiece).
When a thermoplastic resin material is used as a bonding agent, heat builds up between the synthetic grindstone and the wafer W, the thermoplastic resin material acting as the bonding agent softens, and the surface of the synthetic grindstone is flattened. Then, when the thermoplastic resin material used as the binder melts and adheres to the surface of the wafer W, which is called sticking, the grinding resistance of the synthetic grindstone rises sharply, causing surface roughness and scratches on the wafer W. obtain.
On the other hand, when a non-woven fabric is used as the binder 102 as in the synthetic grindstone 100 according to the present embodiment, even if heat accumulates in the binder 102, the surface of the synthetic grindstone 100 is not flattened. Therefore, even if heat accumulates between the synthetic grindstone 100 and the wafer W, the binder 102 can be prevented from melting. Therefore, the synthetic whetstone 100 according to this embodiment can maintain stable processing performance over a longer period of time. Therefore, it is possible to prevent the surface of the wafer W, which is the object to be cut, from being accidentally scratched. Therefore, by using the non-woven fabric binder 102 according to the present embodiment, the workpiece (surface to be machined) can be scraped softer than when a thermoplastic resin material is used as the binder. It can contribute to reducing damage.

This is because the inventors of the present application, who have made diligent efforts to prevent excessive frictional heat during dry polishing, have found that the synthetic grindstone 100 satisfies the three elements of a grindstone in the three-phase diagram described above. This is due to the discovery that the workability of the work can be improved by forming the That is, for example, the synthetic whetstone 100 suitable for performing dry surface processing has an abrasive grain ratio (Vg) of greater than 0 volume% and 40 volume% or less, and an abrasive grain ratio (Vb) of , 35% by volume or more and 90% by volume or less of the binder 102 made of nonwoven fabric, and the porosity (Vp) of the synthetic whetstone 100 is 10% by volume or more and 55% by volume or less.
According to the present embodiment, the synthetic whetstone 100, the synthetic whetstone assembly 200, and the method for manufacturing the synthetic whetstone 100 are provided, which can suppress excessive frictional heat when dry polishing is performed, for example. can be done.

In this embodiment, the range that can be formed as the synthetic whetstone 100 is set for an example in which PET short fibers are used as the nonwoven fabric of the binder 102 . The non-woven fabric as the binding agent 102 can be polyester short fibers, polyamide (PA) short fibers, or polypropylene (PP) short fibers. As the nonwoven fabric, one or more of polyester staple fibers, polyamide (PA) staple fibers, and polypropylene (PP) staple fibers may be selected and used. When these nonwoven fabrics are used as the binder 102, the ranges of the volume ratios of the abrasive grain ratio (Vg), the binder ratio (Vb), and the porosity (Vp) are the same as in the case of using PET short fibers. Can be set. In addition, the nonwoven fabric as the binder 102 is not limited to these. For example, a long-fiber nonwoven fabric can be used. As the long-fiber nonwoven fabric, polyester long fibers, polypropylene long fibers, etc., or a mixture thereof can be used.
The short-fiber nonwoven fabric is one in which the fibers are cut, and the long-fiber nonwoven fabric is one in which the fibers are connected in an endless manner. The short-fiber nonwoven fabric uses cut fibers, and the fiber length of the short-fiber nonwoven fabric can be set as appropriate. An example of the fiber length of the short-fiber nonwoven fabric is on the order of microns. Further, the long-fiber nonwoven fabric is, for example, fibers connected to the same length as the winding length. For example, if there is a winding of 100m, one fiber is approximately 100m.

In the present embodiment, an example in which the synthetic whetstone 100 is provided in a disc shape has been described. The synthetic whetstone 100 can be formed in various shapes such as a pellet shape and an elongated rectangular parallelepiped shape. The synthetic whetstone assembly 200 is formed in an appropriate shape so as to hold the synthetic whetstone 100 .

Although the synthetic whetstone 100 according to the present embodiment has been described as an example using dry processing, it can also be used for wet processing using, for example, grinding water (for example, pure water).

(First modification)
Synthetic whetstone 100 according to this modified example will be described for the case where coarse particles of an appropriate size are included as the first filler.

The first filler is preferably spherical, for example, but it is not necessarily limited to a spherical shape, and if it is in the form of a mass, it may have some unevenness or deformation. The first filler is silica, for example, and is dispersed and fixed by a binder 102 made of nonwoven fabric. The first filler preferably contains silica with a grain size larger than that of the abrasive grains 101 and silica with a small grain size fixed around the silica with a large grain size. The small particle size silica is preferably smaller than the particle size of the abrasive grains 101 . The volume ratio of the first filler in the synthetic whetstone 100 is set based on, for example, the abrasive grain ratio (Vg) of the abrasive grains 101 and the correlation with the binder ratio (Vb) of the binder 102 . That is, in this modification, the synthetic whetstone 100 first determines the abrasive grain ratio (Vg) of the abrasive grains 101, and then determines the binder ratio (Vb) of the binder 102 and the volume ratio of the first filler. It is set by the correlation of 102 and the first filler. The first filler is preferably more than 0% by volume and no more than 40% by volume.

Note that the abrasive grains 101 made of cerium oxide are equivalent to or softer than the wafer W or its oxide with respect to the wafer W, which is the work to be cut and whose main component is silicon. Moreover, with respect to the abrasive grains 101, the first filler made of silica is the same as or softer than the wafer W or its oxide.

A synthetic whetstone 100 containing abrasive grains 101, a non-woven fabric binder 102, and a first filler is manufactured as described in the above embodiment.

Since the first filler has a larger average grain size than the abrasive grains 101, the synthetic grindstone 100 and the wafer W during processing almost come into contact with each other via the top of the first filler. That is, since the first filler is present between the base material (abrasive grains 101 and nonwoven fabric binder 102) of the synthetic grindstone 100 and the wafer W, the base material and the wafer W are in direct contact. and a certain gap is created.

When processing is started with the first filler in contact with the wafer W, an external force acts on the base material. The continuous action of this external force causes the abrasive grains 101 to come off from the base material. The liberated abrasive grains 101 exist at the processing interface in a state of adhering to the first filler in the gap between the synthetic grindstone 100 and the wafer W. For this reason, the abrasive grains 101 being processed and the wafer W almost come into contact with each other through the vertices of the first filler. Therefore, the actual contact area between the abrasive grains 101 and the wafer W is significantly reduced, and the working pressure at the processing point is increased. Therefore, the grinding process proceeds with high machining efficiency.

The gap facilitates the circulation of outside air in the vicinity of the surface of the wafer W, thereby cooling the processing surface. Also, the sludge produced by the abrasive grains 101 is discharged outside from the wafer W through the gap, and the surface of the wafer W can be prevented from being damaged. As a result, burning and scratching of the surface of the wafer W due to frictional heat can be prevented.

In this manner, the synthetic grindstone 100 grinds the surface of the wafer W to a flat surface with a predetermined surface roughness.

According to the synthetic grindstone 100 according to this modification, even if the processing progresses, the contact pressure between the abrasive grains 101 and the wafer W is sufficiently maintained to maintain the processing efficiency, and the bonding agent 102 and the wafer W are directly connected to each other. By suppressing the direct contact, it is possible to prevent deterioration in quality of the wafer W and occurrence of scratches. In this modified example, as described in the above-described embodiment, it is possible to suppress excessive frictional heat due to heat generated between the synthetic grindstone 100 and the workpiece.

As the first filler, silica, carbon, silica gel which is a porous material thereof, activated carbon, spherical resin, and the like can be applied. A hollow balloon used as a pore-forming agent is not suitable because it may crack during processing and cause scratches.

(Second modification)
Synthetic whetstone 100 according to this modified example will be described with respect to a case in which a conductive substance having an appropriate size that is smaller than the first filler described in the first modified example is included as the second filler. Further, in this modified example, the grindstone holding member 43 of the CMG apparatus 10 described above uses, for example, an aluminum alloy material as a material having electrical conductivity and suitable thermal conductivity.

Examples of conductive substances include carbon nanotubes. These substances are smaller than the average grain size of the abrasive grains 101 . The volume ratio of the second filler in the synthetic whetstone 100 is set based on, for example, the abrasive grain ratio (Vg) of the abrasive grains 101 and the correlation with the binder ratio (Vb) of the binder 102 . That is, in this modification, the synthetic grindstone 100 first determines the abrasive grain ratio (Vg) of the abrasive grains 101, and then determines the binder ratio (Vb) of the binder 102 and the volume ratio of the second filler. 102 and the correlation of the second filler. Preferably, the second filler is added at more than 0% and up to 10% by volume. In addition, by using carbon nanotubes, for example, as the second filler, it is possible to improve the structural strength of the synthetic whetstone 100 .

When the CMG apparatus 10 starts processing the wafer W, the synthetic grindstone 100 slides on the wafer W, and an external force acts on the bonding agent 102 . The abrasive grains 101 are shedding due to the continuous action of this external force. The liberated abrasive grains 101 are slid in the gap between the synthetic grindstone 100 and the wafer W. As shown in FIG. The surface of the wafer W is polished by the chemical and mechanical action of the abrasive grains 101 .

Static electricity can be generated on the surface of the wafer W when the surface of the wafer W is polished and friction occurs. At this time, the conductive second filler causes static electricity on the surface of the wafer W to flow to the grindstone holding member 43 (see FIG. 6). Therefore, by using the synthetic grindstone 100 according to the present embodiment, static electricity generated on the surface of the wafer W can be removed while the surface of the wafer W is being polished. As a result, it is possible to prevent dust and the like from adhering to the surface of the wafer W. FIG.

Moreover, in this modification, the heat conductivity of the grindstone holding member 43 is higher than that of the synthetic grindstone 100 . Frictional heat is generated on the surface of the wafer W when the surface of the wafer W is polished and friction occurs. At this time, the frictional heat is absorbed by the second filler, and the heat absorbed by the second filler is thermally conducted to the grindstone holding member 43 . Therefore, by using the synthetic grindstone 100 according to this modification, the frictional heat generated on the surface of the wafer W can be removed while the surface of the wafer W is being polished. As a result, it is possible to prevent the surface of the wafer W from burning due to frictional heat between the surface of the synthetic grindstone 100 and the surface of the wafer W, and also prevent scratches. Therefore, the synthetic grindstone 100 according to this modified example can not only process the surface of the wafer W satisfactorily, but also extend the life of the synthetic grindstone 100 .

It is also preferable that the grindstone holding member 43 that rotates together with the synthetic whetstone 100 is provided with a heat radiating portion such as a heat radiating fin, that is, the synthetic whetstone assembly 200 has a heat radiating portion (heat transfer portion). In this case, the rotation causes the heat radiating portion to come into contact with the air, and the heat of the synthetic whetstone 100 is effectively radiated.
Further, it is also possible to cool the grindstone holding member 43 and the synthetic grindstone 100 by providing a water pipe for cooling water or the like inside the grindstone holding member 43 .
In this modified example, an example in which the grindstone holding member 43 has electrical conductivity and thermal conductivity higher than that of the synthetic grindstone 100 has been described. may have been If it has conductivity, static electricity between the workpiece and the synthetic whetstone 100 can be removed, and if it has higher thermal conductivity than the synthetic whetstone 100, heat that can be generated in the synthetic whetstone 100 can be effectively dissipated. can do.

In addition, the example using the 1st filler was demonstrated in the 1st modification, and the example using the 2nd filler was demonstrated in the 2nd modification. The synthetic whetstone 100 also preferably contains both the first filler and the second filler.

(Third modification)
Synthetic whetstone 100 according to this modified example will be described with respect to a case in which particles having an appropriate size smaller than the first filler described in the first modified example are included as the third filler.

Examples of the particles of the third filler include green carborundum (GC). These particles are harder than the wafer W which is the workpiece. The particles of the third filler such as GC may be larger or smaller than the average particle size of the abrasive grains 101 . Of course, the particles such as GC may have a size approximately equal to the average particle size of the abrasive grains 101 .
For example, the average particle size of metal oxide-based abrasive grains 101 such as aluminum oxide (alumina), zirconium oxide (zirconia), cerium oxide (ceria), silicon oxide (silica), etc. may be larger or smaller than GC, They can be of similar size. For example, most of alumina-, zirconia-, and ceria-based abrasive grains 101 have an average grain size larger than that of GC. For example, the average particle diameter of the alumina-based abrasive grains 101 can be about the same size as GC (up to 200 nm). For example, when particles such as GC are 10 nm, the average particle diameter of abrasive grains 101 such as silica may be 1 nm. The volume ratio of the third filler in the synthetic whetstone 100 is set based on, for example, the abrasive grain ratio (Vg) of the abrasive grains 101 and the correlation with the binder ratio (Vb) of the binder 102 . Preferably, the third filler is added at more than 0% and up to 10% by volume.

There is a technique (gettering effect) in which gettering sites such as fine scratches are formed on the back surface of the wafer W opposite to the front surface and impurities are captured at the gettering sites. GC is harder than the back surface of the wafer W and is used to scratch the back surface of the wafer W on purpose.

In this modified example, as described in the above-described embodiment, it is possible to suppress excessive frictional heat due to heat generated between the synthetic grindstone 100 and the workpiece. In addition, if the GC is conductive, it is possible to suppress static electricity that may occur between the synthetic grindstone 100 and the workpiece.

It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made in the implementation stage without departing from the scope of the invention. Further, each embodiment may be implemented in combination as appropriate, in which case the combined effect can be obtained. Furthermore, various inventions are included in the above embodiments, and various inventions can be extracted by combinations selected from a plurality of disclosed constituent elements. For example, even if some constituent elements are deleted from all the constituent elements shown in the embodiments, if the problem can be solved and effects can be obtained, the configuration with the constituent elements deleted can be extracted as an invention.

DESCRIPTION OF SYMBOLS 10...CMG apparatus, 43...Whetstone holding member, 100...Synthetic whetstone, 101...Abrasive grain, 102...Binder, 200...Synthetic whetstone assembly.

Claims (7)

A synthetic whetstone for surface processing a work piece,
Abrasive grains with an abrasive grain ratio (Vg) of greater than 0% by volume and 40% by volume or less;
a binder made of nonwoven fabric having a binder rate (Vb) of 35% by volume or more and less than 90% by volume;
including
The porosity (Vp) of the synthetic whetstone is greater than 10% by volume and equal to or less than 55% by volume.
Synthetic whetstone. 2. The synthetic whetstone according to claim 1, wherein said non-woven binder comprises at least one of polyester staple fibers, polyamide staple fibers, and polypropylene staple fibers. The synthetic whetstone is used for dry surface processing,
At least one of a first filler having a larger average particle size than the abrasive grains, a second filler having conductivity, and a third filler harder than the workpiece,
The synthetic whetstone according to claim 1. abrasive grains;
a nonwoven fabric binder that holds the abrasive grains in a dispersed state;
a filler having at least one of a first filler having a larger average particle diameter than the abrasive grains, a second filler having conductivity, and a third filler having a higher hardness than the workpiece; Synthetic whetstone for processing. The synthetic whetstone according to any one of claims 1 to 4, which exhibits a dry chemical mechanical grinding action on the work piece. A synthetic whetstone according to claim 3 or claim 4;
a substrate to which the synthetic whetstone is fixed and which has at least one of electrical conductivity and thermal conductivity higher than that of the synthetic whetstone;
Synthetic whetstone assembly. A method for manufacturing a synthetic whetstone according to claim 1,
Obtaining a mixed material by mixing the abrasive grains and the nonwoven fabric binder;
Filling the mixed material into a mold and molding by hot pressing;
demolding the molded body;
including,
A method for manufacturing a synthetic whetstone.

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