TW202101647A - Carrier for back end of line processing - Google Patents

Abstract

A carrier assembly is configured to support a wafer, including during back end of line (BEOL) processing. The carrier assembly includes dual carriers. A first carrier includes a stepped structure so as to situate the wafer. A side of the wafer is bonded to the first carrier without adhesive. The first carrier is positioned atop the second carrier, so as to be mechanically supported by the second carrier. Each carrier is made by wet etching of laminated glass, without mechanical polishing.

Description

Vehicles for post-processing of production lines

This case claims priority to the U.S. Provisional Application No. 62/864,139 filed on June 20, 2019. The full text of this application is incorporated into this specification by reference for reference.

This case generally involves integrated circuit manufacturing. More specifically, this case relates to the interconnection of electronic components.

After IC components in the form of individual components such as transistors, capacitors, and resistors are manufactured, the post-production (BEOL) process is the second major step in integrated circuit (IC) manufacturing. Perform BEOL processing to deposit metal wiring between individual components to interconnect the components through metallization. BEOL involves many steps, including separating the wafer from the support structure, a process called peeling.

This case involves technologies that simplify BEOL processing while protecting the wafers from damage. Specifically, as described in more detail below with reference to exemplary non-limiting embodiments, this case proposes to simplify the step of transferring wafers to the dicing platform to increase wafer yield (that is, wafers that do not need to be discarded due to manufacturing defects) Circle ratio) device and method.

At least one embodiment of this case relates to a carrier assembly for supporting wafers, including during BEOL processing. The carrier component includes a dual carrier. The first carrier includes a stepped structure for placing wafers. One side of the wafer is bonded to the first carrier without adhesive. The first carrier system is located on top of the second carrier so as to be mechanically supported by the second carrier. Each carrier is made of wet-etched laminated glass and is not mechanically polished.

At least one embodiment of this case relates to a method for supporting a wafer during processing. The method includes placing the wafer on a first carrier, and supporting the first carrier with a second carrier at least partially disposed under the first carrier. The first carrier and the second carrier form a dual carrier for placing wafers. The method further includes transferring the wafer in situ to a cutting platform to cut the wafer in the dual carrier.

In addition, at least one embodiment of this case relates to a method of manufacturing a carrier assembly. The method includes constructing a first carrier of a carrier assembly by the following steps: attaching a first cladding layer of the first carrier to a first core layer; and attaching a second cladding layer of the first carrier to the first core layer A core layer such that the first core layer is sandwiched between the first cladding layer and the second cladding layer of the first carrier. The method further includes: performing a first etching process on the first carrier to expose a portion of the first core layer; and performing a second etching process on the first carrier to form a through hole. The formation of the through hole divides the first carrier into a first section and a second section.

When the following detailed descriptions are made in conjunction with the accompanying drawings, these and other features, as well as their organization and operation methods, will become apparent. Throughout the several drawings described below, the same elements have the same element symbols. It should be understood that all combinations of the aforementioned concepts and the additional concepts discussed in more detail below (when these concepts are not contradictory) are considered to be part of the subject matter disclosed in this case. Specifically, all combinations of the requested subject matter that appeared at the end of the case are considered to be part of the subject matter disclosed in the case.

Various example embodiments provide dual carriers to support wafers, such as silicon (Si) wafers, during BEOL processing. More specifically, the dual carrier system is formed by two carrier sheets, with the first carrier on top of the second carrier, as described below. During multiple stages of BEOL processing, at least a portion of the dual carrier supports the wafer. In addition, at least a part of the dual carrier supports the wafer during dicing and supports individual dies after dicing, so a separate peeling process is not required.

In at least one embodiment, the dual carrier 100 is a glass product. In at least one embodiment, the glass article may be a glass article as described in US Patent Application Publication No. 2017/0174564 published on June 22, 2017, which is US Patent Application No. 15 filed on March 25, 2015 The application of /129,278 is published, and the entire content is incorporated into this case by reference, including the composition and method described therein.

Figure 7 depicts a glass product according to at least one embodiment. As used herein, the term "average thermal expansion coefficient" refers to the average thermal expansion coefficient of a given material or layer between 0°C and 300°C. As used herein, the term "coefficient of thermal expansion" refers to the average coefficient of thermal expansion, unless otherwise stated.

According to the test method described in ASTM C1499-08 Standard Test Method for Monotonic Biaxial Bending Strength of Advanced Ceramics at Ambient Temperature, ring-to-ring load is used to determine the strength of at least one glass product described herein. Generally, the ring-to-ring load test method is used to measure the biaxial strength of advanced brittle materials at ambient temperature through a concentric ring configuration under monotonic uniaxial load, and it has been widely used as a method to evaluate the surface strength of glass products. The ring-to-ring load results described in this article are measured on a 2-inch square glass plate using a 1-inch diameter support ring and a 0.5-inch diameter load ring. The contact radius of the ring is 1.6 mm, and the head speed is 1.2 mm/min.

As used herein, the term "residual strength" refers to the strength of a glass article measured after defects are introduced into the outer surface of the glass article in a controlled manner. As used herein, the term "Knoop Scratch Threshold" refers to the load when a transverse crack is first observed in the glass product when the surface of the glass product is scratched with Knoop diamond under increasing load. The test is carried out at room temperature and 50% relative humidity.

As used herein, the term "indentation threshold" refers to the load at which a crack is first observed in the glass product when a Vickers indenter is used to press the surface of the glass product under increasing load. A Vickers indenter was used to apply the indentation load to the surface of the glass article at a rate of 0.2 mm/min, and then removed from the surface of the glass article. Maintain the maximum indentation load for 10 seconds. The indentation threshold is defined as an indentation load under which 50% of 10 indentations will show any number of radial/central cracks from the corners of the indentation. Continue to increase the maximum indentation load until the indentation threshold for a given glass article is reached. All indentation measurements are performed at room temperature and 50% relative humidity.

As used herein, the term "Vickers Scratch Threshold" refers to the load when a Vickers indenter is used to scratch the surface of a glass product under increasing load when a transverse crack is first observed in the glass product. The test procedure is similar to the procedure for determining the Knoop scratch threshold, except that a Vickers indenter is used instead of Knoop diamond. Sustained cracks in the glass article confirmed transverse cracks that were greater than twice the width of the original scratch or groove formed by the Vickers indenter.

In various embodiments, the glass article includes at least a first layer and a second layer. For example, the first layer includes a core layer, and the second layer includes one or more cladding layers adjacent to the core layer. The first layer and/or the second layer are glass layers including glass, glass ceramic, or a combination thereof. In some embodiments, the first layer and/or the second layer are transparent glass layers.

FIG. 7 is a cross-sectional view of an exemplary embodiment of the glass product 200. In some embodiments, the glass article 200 includes a laminate including multiple glass layers. The laminate can be substantially planar as shown in Figure 7, or non-planar. The glass product 200 includes a core layer 102 disposed between the first cladding layer 104 and the second cladding layer 106. In some embodiments, the first cladding layer 104 and the second cladding layer 106 are outer layers as shown in FIG. 7. In other embodiments, the first cladding layer and/or the second cladding layer are intermediate layers disposed between the core layer and the outer layer.

The core layer 102 includes a first major surface and a second major surface opposite to the first major surface. In some embodiments, the first cladding layer 104 is fused to the first major surface of the core layer 102. Additionally, or alternatively, the second cladding layer 106 is fused to the second major surface of the core layer 102. In such an embodiment, the interface layer between the first cladding layer 104 and the core layer 102 and/or between the second cladding layer 106 and the core layer 102 does not have any bonding materials, such as adhesives, coatings, or any additives Or it can be configured to bond individual coatings to the non-glass material of the core layer. Therefore, the first cladding layer 104 and/or the second cladding layer 106 is directly fused to the core layer 102 or directly adjacent to the core layer 102. In some embodiments, the glass article includes one or more intermediate layers disposed between the core layer and the first cladding layer and/or between the core layer and the second cladding layer. For example, the intermediate layer includes an intermediate glass layer and/or a diffusion layer formed at the interface between the core layer and the cladding layer. In some embodiments, the glass product 200 is formed as a glass-glass laminate, wherein the interface between directly adjacent glass layers is a glass-glass interface.

In some embodiments, the core layer 102 includes a first glass composition, and the first and/or second cladding layers 104 and 106 include a second glass composition different from the first glass composition. For example, in the embodiment shown in FIG. 7, the core layer 102 includes the first glass composition, and the first cladding layer 104 and the second cladding layer 106 both include the second glass composition. In other embodiments, the first cladding layer includes a second glass composition, and the second cladding layer includes a third glass composition different from the first glass composition and/or the second glass composition.

The glass product can be formed by a suitable method, such as melt stretching, downward stretching, slit stretching, upward stretching or float. In some embodiments, the glass product is formed using a melt stretching process.

FIG. 8 is a cross-sectional view of an exemplary embodiment of the overflow distributor 300. The overflow distributor 300 can be used to form a glass product, such as the glass product 200. The overflow distributor 300 can be configured as described in US Patent No. 4,214,886, which is incorporated into this specification by reference in its entirety. For example, the overflow distributor 300 includes a lower overflow distributor 220 and an upper overflow distributor 240 located above the lower overflow distributor. The lower overflow distributor 220 includes a groove 222. The first glass composition 224 is melted and fed into the tank 222 in a viscous state. The first glass composition 224 forms the core layer 102 of the glass article 200, as described in detail below. The upper overflow distributor 240 includes a groove 242. The second glass composition 244 is melted and fed into the tank 242 in a viscous state. The second glass composition 244 forms the first and second cladding layers 104 and 106 of the glass article 100, as described in detail below.

The first glass composition 224 overflows the tank 222 and flows down to the opposite outer forming surfaces 226 and 228 of the lower overflow distributor 220. The outer forming surfaces 226 and 228 converge at the pull line 230. The individual first glass composition 224 flows downward to the outer forming surfaces 226 and 228 of the lower overflow distributor 220 respectively, and fuse together at the pulling line 230 where the outer forming surfaces 226 and 228 converge to form glass The core layer 102 of the article 100.

The second glass composition 244 overflows the tank 242 and flows down to the opposite outer forming surfaces 246 and 248 of the upper overflow distributor 240. The second glass composition 244 is deflected outward by the upper overflow distributor 240, so that the second glass composition flows around the lower overflow distributor 220 and interacts with the outer forming surfaces 226 and 228 flowing through the lower overflow distributor. The first glass composition 224 contacts. The individual streams of the second glass composition 244 are fused with the streams of the first glass composition 224 flowing down to the outer molding surfaces 226 and 228 of the lower overflow distributor 220, respectively. After the flow of the first glass composition 224 converges at the pull line 230, the second glass composition 244 forms the first and second cladding layers 104 and 106 of the glass article 200.

In some embodiments, the first glass composition 224 of the core layer 102 in the viscous state contacts the second glass composition 244 of the first and second cladding layers 104 and 106 in the viscous state to form a laminate. In some such embodiments, the laminate is part of a glass ribbon that is tied away from the pull line 230 of the lower overflow distributor 220, as shown in Figure 8. The glass ribbon can be pulled away from the lower overflow distributor 220 by suitable means including, for example, gravity and/or pulling rollers. The glass ribbon is cooled after leaving the lower overflow distributor 220. The glass ribbon is cut to separate the laminate therefrom. Therefore, the laminate is cut from the glass ribbon. Suitable techniques such as scoring, bending, thermal shock and/or laser cutting can be used to cut the glass ribbon. In some embodiments, the glass product 200 includes a laminate as shown in FIG. 7. In other embodiments, the laminate may be further processed (for example, by cutting or molding) to form the glass product 200.

Although the glass product 200 shown in FIG. 7 has three layers, this case also includes other embodiments. In other embodiments, the glass article may have a predetermined number of layers, for example, two, four, or more layers. A glass product with a predetermined number of layers can be formed by changing the overflow distributor accordingly.

In some embodiments, the thickness of the glass article 200 is at least about 0.05 mm, at least about 0.1 mm, at least about 0.2 mm, or at least about 0.3 mm. Additionally or alternatively, the glass article 200 includes a thickness of at most about 2 mm, at most about 1.5 mm, at most about 1 mm, at most about 0.7 mm, or at most about 0.5 mm. In some embodiments, the ratio of the thickness of the core layer 102 to the thickness of the glass article 200 is at least about 0.8, at least about 0.85, at least about 0.9, or at least about 0.95. In some embodiments, the thickness of the second layer (eg, each of the first coating 104 and the second coating 106) is about 0.01 mm to about 0.3 mm.

In some embodiments, the first glass composition and/or the second glass composition includes a liquidus viscosity suitable for forming the glass article 200 using the melt stretching process as described herein. For example, the liquidus viscosity of the first glass composition of the first layer (eg, core layer 102) is at least about 100 kP, at least about 200 kP, or at least about 300 kP. Additionally or alternatively, the liquidus viscosity of the first glass composition is at most about 3000 kP, at most about 2500 kP, at most about 1000 kP, or at most about 800 kP. Additionally or alternatively, the liquidus viscosity of the second glass composition of the second layer (eg, the first and/or second cladding layers 104 and 106) is at least about 50 kP, at least about 100 kP, or at least about 200 kP . Additionally or alternatively, the liquidus viscosity of the second glass composition is at most about 3000 kP, at most about 2500 kP, at most about 1000 kP, or at most about 800 kP. The first glass composition may help to carry the second glass composition on the overflow distributor to form a second layer. Therefore, the liquidus viscosity of the second glass composition may be lower than the liquidus viscosity that is generally considered to be suitable for forming a single-layer plate using a melt stretching method.

In some embodiments, the glass article 200 is configured as a strengthened glass article. For example, in some embodiments, the second glass composition of the second layer (eg, the first and/or second cladding layers 104 and 106) includes the first glass composition of the first layer (eg, the core layer 102) The average coefficient of thermal expansion (CTE) of different objects. For example, the first and second cladding layers 104 and 106 are formed of a glass composition having a lower average CTE than the core layer 102. CTE mismatch (that is, the difference between the average CTE of the first and second cladding layers 104 and 106 and the average CTE of the core layer 102) will cause compressive stress in the cladding layer and in the core layer when the glass article 200 is cooled Generate tensile stress. In various embodiments, each of the first and second cladding layers may independently have a higher average CTE, a lower average CTE, or an average CTE that is substantially the same as the core layer.

In some embodiments, the average CTE of the first layer (eg, core layer 102) differs from the average CTE of the second layer (eg, first and/or second cladding layers 104 and 106) by at least about 5×10 ^-7 ℃ ^-1 , at least about 15×10 ^-7 ℃ ^-1 , or at least about 25×10 ^-7 ℃ ^-1 . Additionally or alternatively, the average CTE of the first layer differs from the average CTE of the second layer by at most about 55×10 ^-7 ℃ ^-1 , at most about 50×10 ^-7 ℃ ^-1 , and at most about 40×10 ^-7 ℃ ^-1 , at most about 30×10 ^-7 ℃ ^-1 , at most about 20×10 ^-7 ℃ ^-1 , or at most about 10×10 ^-7 ℃ ^-1 . For example, in some embodiments, the average CTE of the first layer differs from the average CTE of the second layer by about 5×10 ^-7 ℃ ^-1 to about 30×10 ^-7 ℃ ^-1 or about 5×10 ^-7 ℃ ^{- 1} to about 20×10 ^-7 ℃ ^-1 . In some embodiments, the second glass composition of the second layer includes an average CTE of at most about 40×10 ^-7 °C ^-1 or at most about 35×10 ^-7 °C ^-1 . Additionally or alternatively, the second glass composition of the second layer includes an average CTE of at least about 25×10 ^-7 °C ^-1 , or at least about 30×10 ^-7 °C ^-1 . Additionally or alternatively, the first glass composition of the first layer includes at least about 40×10 ^-7 ℃ ^-1 , at least about 50×10 ^-7 ℃ ^-1 , or at least about 55×10 ^-7 ℃ ^-1 The average CTE. Additionally or alternatively, the first glass composition of the first layer includes at most about 90×10 ^-7 ℃ ^-1 , at most about 85×10 ^-7 ℃ ^-1 , at most about 80×10 ^-7 ℃ ^-1 , An average CTE of at most about 70×10 ^-7 ℃ ^-1 , or at most about 60×10 ^-7 ℃ ^-1 .

In various embodiments, the glass composition and the relative thickness of the glass layers can be selected to obtain glass products with desired strength characteristics. For example, in some embodiments, the first glass composition of the first layer (for example, the core layer 102) and the second glass composition of the second layer (for example, the first and/or second cladding layers 104 and 106) are selected In order to achieve the required CTE mismatch, the thickness of the first layer and the second layer can be selected to obtain the required compressive stress in the second layer and the required CTE mismatch in the first layer. Required tensile stress, required residual strength, and/or required drop threshold.

In various embodiments, the glass composition and the relative thickness of the glass layers can be selected to obtain glass products with desired surface properties. For example, in some embodiments, the first glass composition of the first layer (for example, the core layer 102) and the second glass composition of the second layer (for example, the first and/or second cladding layers 104 and 106) are selected And the thickness of the first layer and the second layer to obtain a glass product having the required Knoop scratch threshold and/or the required indentation threshold.

In some embodiments, the Knoop scratch threshold of the glass article is at least about 5N, at least about 10N, or at least about 15N. Additionally or alternatively, the indentation threshold of the glass article is at least about 20N, at least about 30N, or at least about 40N. Additionally or alternatively, the Vickers scratch threshold of the glass article is at least about 2N, at least about 3N, at least about 5N, or at least about 7N. Additionally or alternatively, the drop threshold of the glass article is at least about 100 cm, at least about 140 cm, or at least about 160 cm.

In some embodiments, the compressive stress of the coating is at most about 800 MPa, at most about 500 MPa, at most about 300 MPa, at most about 200 MPa, at most about 150 MPa, at most about 100 MPa, at most about 50 MPa, or at most about 40 MPa. Additionally or alternatively, the compressive stress of the coating is at least about 10 MPa, at least about 20 MPa, at least about 30 MPa, at least about 50 MPa, or at least about 100 MPa.

The first glass composition of the first layer (for example, the core layer 102) and the second glass composition of the second layer (for example, the first cladding layer 104 and/or the second cladding layer 106) may include those capable of being formed as described herein The appropriate glass composition for the glass products of the required properties.

In some embodiments, the first glass composition includes a glass network former selected from the group consisting of SiO ₂ , Al ₂ O ₃ , B ₂ O ₃ and combinations thereof. For example, the first glass composition includes at least about 50 mol% SiO ₂ , at least about 55 mol% SiO ₂ , at least about 60 mol% SiO ₂ , or at least about 65 mol% SiO ₂ . Additionally or alternatively, the first glass composition comprises up to about 80 mol% of SiO _2, up to about 70 mol% of SiO _2, up to about 68 mol% of SiO _2, or up to about 60mol% of SiO _2. Additionally or alternatively, the first glass composition includes at least about 5 mol% Al ₂ O ₃ , at least about 9 mol% Al ₂ O ₃ , or at least about 12 mol% Al ₂ O ₃ . Additionally or alternatively, the first glass composition includes at most about 20 mol% Al ₂ O ₃ , at most about 17 mol% Al ₂ O ₃ , or at most about 11 mol% Al ₂ O ₃ . Additionally or alternatively, the first glass composition includes at least about 3 mol% B ₂ O ₃ , at least about 6 mol% B ₂ O ₃ , or at least about 7 mol% B ₂ O ₃ . Additionally or alternatively, the first glass composition includes up to about 11 mol% B ₂ O ₃ , up to about 8 mol% B ₂ O ₃ , or up to about 4 mol% B ₂ O ₃ . In some embodiments, the first glass composition is substantially free of B ₂ O ₃ . For example, the first glass composition contains at most about 0.1 mol% B ₂ O ₃ .

In some embodiments, the first glass composition includes an alkali metal oxide selected from the group consisting of Li ₂ O, Na ₂ O, K ₂ O, and combinations thereof. For example, the first glass composition comprises at least about 0.05mol% of Na ₂ O, at least about 10mol% of Na ₂ O, or at least about 13mol% of Na ₂ O. Additionally or alternatively, the first glass composition comprises up to about 16 mol% Na ₂ O, up to about 14 mol% Na ₂ O, up to about 2 mol% Na ₂ O, or up to about 0.1 mol% Na ₂ O . Additionally or alternatively, the first glass composition includes at least about 0.01 mol% K ₂ O, at least about 2 mol% K ₂ O, or at least about 8 mol% K ₂ O. Additionally or alternatively, the first glass composition comprises up to about 15 mol% K ₂ O, up to about 9 mol% K ₂ O, up to about 6 mol% K ₂ O, or up to about 0.1 mol% K ₂ O .

In some embodiments, the first glass composition includes alkaline earth metal oxides selected from the group consisting of MgO, CaO, SrO, BaO, and combinations thereof. For example, the first glass composition includes at least about 1 mol% MgO, at least about 2 mol% MgO, at least about 3 mol% MgO, or at least about 4 mol% MgO. Additionally or alternatively, the first glass composition includes at most about 8 mol% MgO, at most about 4 mol% MgO, or at most about 3 mol% MgO. Additionally or alternatively, the first glass composition includes at least about 0.01 mol% CaO, at least about 2 mol% CaO, at least about 4 mol% CaO, at least about 5 mol% CaO, or at least about 6 mol% CaO. Additionally or alternatively, the first glass composition includes at most about 8 mol% CaO, at most about 7 mol% CaO, at most about 0.1 mol% CaO, or at most about 0.01 mol% CaO. Additionally or alternatively, the first glass composition includes at least about 3 mol% SrO, at least about 4 mol% SrO, at least about 5 mol% SrO, or at least about 6 mol% SrO. Additionally or alternatively, the first glass composition includes at most about 7 mol% SrO, at most about 6 mol% SrO, or at most about 5 mol% SrO. Additionally or alternatively, the first glass composition includes at least about 0.01 mol% BaO, at least about 0.02 mol% BaO, or at least about 0.07 mol% BaO. Additionally or alternatively, the first glass composition includes at most about 0.1 mol% BaO, at most about 0.09 mol% BaO, at most about 0.05 mol% BaO, or at most about 0.01 mol% BaO. In some embodiments, the first glass composition is substantially free of SrO. For example, the first glass composition includes up to about 0.1 mol% SrO.

In some embodiments, the first glass composition includes one or more additional ingredients, including, for example, SnO ₂ , Sb ₂ O ₃ , As ₂ O ₃ , Ce ₂ O ₃ , Cl (eg, derived from KCl or NaCl ), ZrO ₂ or Fe ₂ O ₃ .

In some embodiments, the second glass composition includes a glass network former selected from the group consisting of SiO ₂ , Al ₂ O ₃ , B ₂ O ₃ and combinations thereof. For example, the second glass composition includes at least about 60 mol% SiO ₂ , at least about 62 mol% SiO ₂ , or at least about 67 mol% SiO ₂ . Additionally or alternatively, the second glass composition includes at most about 70 mol% SiO ₂ , at most about 68 mol% SiO ₂ , at most about 65 mol% SiO ₂ , or at most about 63 mol% SiO ₂ . Additionally or alternatively, the second glass composition includes at least about 6 mol% Al ₂ O ₃ , at least about 10 mol% Al ₂ O ₃ , or at least about 12 mol% Al ₂ O ₃ . Additionally or alternatively, the second glass composition includes at most about 18 mol% Al ₂ O ₃ , at most about 13 mol% Al ₂ O ₃ , or at most about 8 mol% Al ₂ O ₃ . Additionally or alternatively, the second glass composition includes at least about 4 mol% B ₂ O ₃ , at least about 6 mol% B ₂ O ₃ , at least about 9 mol% B ₂ O ₃ , or at least about 16 mol% B ₂ O ₃ . Additionally or alternatively, the second glass composition includes at most about 21 mol% B ₂ O ₃ , at most about 18 mol% B ₂ O ₃ , or at most about 11 mol% B ₂ O ₃ .

In some embodiments, the second glass composition includes an alkali metal oxide selected from the group consisting of Li ₂ O, Na ₂ O, K ₂ O, and combinations thereof. For example, the second glass composition includes about 0 mol% to about 0.1 mol% Na ₂ O, or about 0 mol% to about 0.06 mol% Na ₂ O. Additionally or alternatively, the second glass composition includes about 0 mol% to about 0.05 mol% K ₂ O, or about 0 mol% to about 0.03 mol% K ₂ O. In some embodiments, the second glass composition is substantially free of alkali metals. For example, the second glass composition contains at most about 0.1 mol% alkali metal oxide. In other embodiments, the second glass composition includes about 5 mol% to about 10 mol% of alkali metal oxide.

In some embodiments, the second glass composition includes alkaline earth metal oxides selected from the group consisting of MgO, CaO, SrO, BaO, and combinations thereof. For example, the second glass composition includes at least about 0.2 mol% MgO, at least about 1 mol% MgO, or at least about 3 mol% MgO. Additionally or alternatively, the second glass composition includes at most about 5 mol% MgO, at most about 4 mol% MgO, at most about 2 mol% MgO, or at most about 0.5 mol% MgO. Additionally or alternatively, the second glass composition includes at least about 3 mol% CaO, at least about 4 mol% CaO, at least about 5 mol% CaO, or at least about 8 mol% CaO. Additionally or alternatively, the second glass composition includes at most about 12 mol% CaO, at most about 9 mol% CaO, at most about 8 mol% CaO, or at most about 5 mol% CaO. Additionally or alternatively, the second glass composition includes at least about 0.2 mol% SrO, at least about 1 mol% SrO, or at least about 2 mol% SrO. Additionally or alternatively, the second glass composition includes at most about 3 mol% SrO, at most about 2 mol% SrO, or at most about 1 mol% SrO. Additionally or alternatively, the second glass composition includes at least about 0.01 mol% BaO, at least about 0.02 mol% BaO, or at least about 1 mol% BaO. Additionally or alternatively, the second glass composition includes at most about 2 mol% BaO, at most about 0.5 mol% BaO, at most about 0.03 mol% BaO, at most about 0.02 mol% BaO, or at most about 0.01 mol% BaO. In some embodiments, the second glass composition includes about 3 mol% to about 16 mol% of alkaline earth metal oxide. Additionally, in some embodiments, the second glass composition includes one or more additional ingredients, including, for example, SnO ₂ , Sb ₂ O ₃ , As ₂ O ₃ , Ce ₂ O ₃ , Cl (for example, derived from KCl Or NaCl), ZrO ₂ or Fe ₂ O ₃ . Figure 1 is a cross-sectional view of a dual carrier on which wafers are placed according to at least one embodiment. As shown in Figure 1, the wafer (Si wafer) 101 is located in the dual carrier 100. In at least one embodiment, the dual carrier 100 may be composed of at least one glass product such as the glass product 200 described above. In at least one embodiment, the dual carrier 100 is a carrier support structure or carrier assembly formed by a first carrier 10 and a second carrier 20 located below the first carrier 10 to support the first carrier 10. The manufacturing of the first carrier 10 and the second carrier 20 according to at least one exemplary embodiment is described below.

Figures 2A-2E depict the preparation and formation of the first carrier 10. FIG. 2A is a cross-sectional view of the first carrier 10 of the dual carrier 100 before patterning according to at least one embodiment. As shown in Figure 2A, the first carrier 10 includes a layer of core material 14 sandwiched between an upper layer 12 of the cladding layer and a lower layer 18 of the cladding layer. In some embodiments, the core material 14 (core layer) may be glass, and the upper (first) layer 12 and the lower (second) layer 18 of the cladding layer may be made of laminates. Therefore, according to at least one embodiment, the first carrier 10 can be constructed in the manner of a glass product 200, wherein the core material 14 is made of the same or similar composition as the core layer 102, and the upper layer 12 is made of the same or similar composition as the first cladding layer. 104 is made of the same or similar composition, and the lower layer 18 is made of the same or similar composition as the second cladding layer 106, and each component is made by the same or similar process as the above.

In various embodiments, the core material 14 and the upper layer 12 and the lower layer 18 of the cladding layer may be glasses with different compositions and different characteristics. That is, the core material 14 may be different from the upper layer 12 and the lower layer 18 of the cladding layer, and further, in some embodiments, the cladding material of the upper layer 12 may be the same as or different from the cladding material of the lower layer 18. More specifically, in some embodiments, one or more of the core material 14, the upper layer 12, or the lower layer 18 may include laminated glass. In some embodiments, the ratio of the thickness of the core material 14 to the thickness of the first carrier 10 is at least about 0.8, at least about 0.85, at least about 0.9, or at least about 0.95. FIG. 2B is a cross-sectional view of the first carrier of the dual carrier after patterning according to at least one embodiment. As shown in FIG. 2B, the etching prevention layer 16 is located on top of the upper layer 12 of the cladding layer. The etching prevention layer 16 is patterned to prepare the first carrier 10 for forming one or more openings (holes) therein. As described below, the patterning of the etching prevention layer 16 forms at least one opening where the upper layer 12 is not covered. In some embodiments, the etching prevention layer 16 may be a photoresist or a mask.

In Figures 2A to 2C, the first carrier 10 is illustrated as having an opening that can be seen in cross section. It should be understood that this is for ease of description, and the size and number of the openings in the first carrier 10 may vary according to some embodiments. For example, the first carrier 10 shown in Figures 2A to 2C may be about half of the actual first carrier 10 (that is, a part of the carrier 10 containing an opening), and the full length of the first carrier 10 may be In order to accommodate two openings in the length direction of the carrier 10, and also accommodate two openings in the width direction.

In some embodiments, the size of the first carrier 10 can accommodate 2, 4, 6, 8, 10, or 12 openings, while in other embodiments, a different number of openings can be provided. Specifically, the number of openings can vary according to the size of the wafer to be loaded on the first carrier 10. For example, if a silicon wafer with a diameter of about 12 inches (about 300 mm) is used, the size of the first carrier 10 may be about 800 mm×800 mm, and four openings are provided. If a silicon wafer with a diameter of about 8 inches (about 200 mm) is used, the size of the first carrier 10 may be about 550 mm×550 mm, and four openings are provided.

Figure 2D is a top view of the first carrier as shown in Figure 2B, according to at least one embodiment. As shown in FIG. 2D, when patterning is performed to form holes, the etching prevention layer 16 is not continuously provided on the top of the upper layer 12 of the cladding layer. Instead, openings 17 are provided, and when viewed from the top, the upper layer 12 of the coating can be seen through these openings 17.

FIG. 2C is a cross-sectional view of the first carrier of the dual carrier after etching according to at least one embodiment. In at least one embodiment, etching is performed in the first etching process to form holes in the first carrier 10. The etching process removes part of the upper layer 12 of the cladding layer, thereby expanding the opening between the sides of the adhesive 16. Specifically, by removing the portion of the upper layer 12 exposed by patterning, the etching enlarges at least the depth of the opening 17.

Figure 2E is a top view of the first carrier as shown in Figure 2C, according to at least one embodiment. As shown in FIG. 2E, by etching to remove part of the upper layer 12 of the cladding layer, the core material 14 is directly exposed through the opening 17 and can be seen when viewed from the top of the first carrier 10.

FIG. 3A is a cross-sectional view of the first carrier after patterning to form the opening 17 as a through hole according to at least one embodiment. As shown in Figure 3A, patterning can be performed in such a way that the etching prevention layer 16 not only exists above the upper layer 12 of the cladding layer, but also exists on the side surface of the opening 17, especially on the remaining part of the upper layer 12. It is adjacent to and located on the peripheral portion of the opening 17 directly above the portion of the core material 14 not covered by the upper layer 12 of the coating. More specifically, the etching prevention layer 16 is configured such that the stepped portion 13 is present to border the opening 17, and the etching prevention layer 16 extends beyond the stepped portion 13 in the lateral direction (the direction along the long axis of the first carrier 10). .

Figure 3C is a top view of the first carrier 10 as shown in Figure 3A, according to at least one embodiment. The top view of the first carrier 10 shown in FIG. 3C is equivalent to the top view of the first carrier 10 shown in FIG. 2E, although the etching prevention layer 16 is present on the side surface of the opening 17 and the etching prevention layer 16 covered Surface area ratio.

FIG. 3B is a cross-sectional view of the first carrier 10 after etching and via formation according to at least one embodiment. As shown in FIG. 3B, the upper layer 12 of the cladding layer is removed through the second etching process so that the first length in the lateral direction of the first carrier 10 is smaller than the length of the lower layer 18 of the cladding layer under the core material 14. According to some embodiments, the core material 14 and the lower layer 18 of the cladding may have approximately the same length.

The upper layer 12 of the cladding layer is arranged along a degree shorter than the core material 14 and the lower layer 18 of the cladding layer. This structure is used to form stepped or staggered openings 17, which are formed in the first carrier. 10 has an edge or side wall 15 in the center. The stepped opening 17 is formed without mechanical polishing, and is formed through the first etching process and the second etching process. That is, a T-shaped opening is formed, wherein the rod portion of the T has a first width, and the first width is the width of the portion where the core material 14 and the lower layer 18 of the cladding layer are etched away, and is perpendicular to the T of the rod portion The horizontal portion has a second width, and the second width is the width of the portion where the upper layer 12 of the cladding layer is etched away, and the second width exceeds the first width.

In at least one embodiment, the width of the stepped opening between the side wall 15 and the edge of the core material 14 may be in the range of about 2 mm to about 5 mm. That is, the distance between the upper cladding layer 12 of the first section A of the first carrier 10 and the upper cladding layer 12 of the second section B is greater than the lower cladding layer 18 and the second section of the first section A The distance between the lower cladding layers 18 of section B. During wafer processing, a part of the wafer adjacent to the sidewall 15 is usually excluded because this part cannot be used. In at least one embodiment, the edge of the wafer contained in the first carrier 10 is excluded by approximately 3 mm.

Figure 3D is a top view of the first carrier 10 as shown in Figure 3B, according to at least one embodiment. As shown in Figure 3D, at least because the upper layer 12 of the cladding layer is disposed on the entire core material 14, when the opening 17 expands to form a through hole that penetrates the core material 14 and the lower layer 18 of the cladding layer, a part of the core material 14 Is visible. Therefore, according to some embodiments, the resulting first carrier 10 is formed of two different parts, namely, the carrier section A and the carrier section B separated by the opening 17, as shown in FIG. 3B.

Figures 4A to 4D depict the preparation and formation of the second carrier 20. The second carrier 20 is a carrier member that supports the first carrier 10 when the first carrier 10 is on the second carrier 20, as shown in FIG.

In some embodiments, the processing and configuration of the first carrier 10 and the second carrier 20 are different from each other. For example, according to some embodiments, the first carrier 10 is manufactured by two different etching processes, and in some embodiments, the second carrier 20 can be manufactured by a single etching process. As another example, the structure of the first carrier 10 and the second carrier 20 may be different in terms of carrier size and outline. As described above, the first carrier 10 is provided with a stepped opening 17. On the contrary, the second carrier 20 is configured as a single structure with a protrusion, as described in detail below.

FIG. 4A is a cross-sectional view of the second carrier 20 of the dual carrier 100 after patterning according to at least one embodiment. The second carrier includes a layer of core material 24 sandwiched between an upper layer 22 of cladding material and a lower layer 28 of cladding material. As shown in FIG. 4A, the etching prevention layer 26 is provided on top of a part of the upper layer 22 of the cladding material.

It should be understood that this is for ease of description, and the size and number of the openings in the second carrier 20 may vary according to certain embodiments. For example, the second carrier 20 illustrated in FIGS. 4C and 4D may be about half of the actual second carrier 20 (that is, a part of the carrier 10 that includes an opening), and the overall size of the second carrier 20 It may be that two openings are accommodated in the length direction of the second carrier 20, and two openings are also accommodated in the width direction.

Figure 4C is a top view of the second carrier 20 as shown in Figure 4A, according to at least one embodiment. As shown in FIG. 4C, the etching prevention layer 26 is located above the upper layer 22 of the coating material. When viewed from the top of the portion of the carrier 20 where the etching prevention layer 26 is not provided, the lower layer 28 of the coating material is visible.

FIG. 4B is a cross-sectional view of the second carrier 20 after being etched to form a platform, according to at least one embodiment. More specifically, FIG. 4B depicts the second carrier 20 after wet etching has been performed using acid. After etching, the core material 24 and the upper layer 22 of the cladding layer not covered by the etching prevention layer 26 are removed. The remaining structure includes a lower layer 28 of cladding that forms a platform or base for the remaining portion of the second carrier 20.

Specifically, the lower layer 28 of the cladding layer is configured as an extended plane portion. The remaining portions of the core material 24 and the upper layer 22 of the cladding layer that have not been removed by etching form a convex portion 23. The protrusion 23 is located on the lower layer 28 of the cladding layer, so that the lower layer 28 of the cladding layer provides support for the protrusion 23, and uses the base formed by the lower layer 28 and the protrusion 23 as a platform to provide structural stability for the second carrier 20 . The core material 24 and the material used for the upper layer 22 and/or the lower layer 28 may have different compositions in order to provide different wet etching rates for selectivity. When the second carrier 20 and the first carrier 10 are assembled together, the lower layer 28 extends in the transverse direction on both sides of the convex portion 23 to support the first section and the second section of the first carrier 10 on the convex portion 23 On opposite sides.

Figure 4D is a top view of the second carrier 20 as shown in Figure 4B, according to at least one embodiment. As shown in FIG. 4D, when etching is performed on the second carrier 20, the etching prevention layer 26 protects a part of the upper layer 22 of the cladding layer above a part of the core material 24, and the upper layer 22 and other parts of the core material 24 It is removed, leaving only the lower layer 28 below the convex portion 23. Therefore, as shown in the top view, only the upper layer 22 of the cladding layer and the lower layer 28 of the cladding layer are visible.

FIG. 5A is a cross-sectional view of the dual carrier 100 with the wafer 101 attached, according to at least one embodiment. More specifically, FIG. 5A depicts a dual carrier 100 formed by assembling the first carrier 10 and the second carrier 20, in which the wafer 101 is arranged such that the main axis of the main body 101 is formed by the convex portion of the second carrier 20 23 is supported below. When the first carrier 10 and the second carrier 20 are assembled together, at least a part of the overlying layer 22 of the second carrier 20 is flush with (inlaid) at least a part of the core material layer 14 of the first carrier 10, that is, the upper The height of at least a part of the cladding layer 22 is the same as the height of at least a part of the core material 14 layer. In addition, as shown in FIG. 5A, most of the wafer is directly supported by the protrusion 23. This structure helps to position the wafer 101.

In addition, the portion of the wafer 101 that protrudes beyond the convex portion 23 in the longitudinal direction occupies the space formed by the opening 17 (step-shaped opening) of the staggered portion of the first carrier 10. That is, in some embodiments, the wafer 101 is placed to occupy a space spanning the distance between the edges 15 of the opening 17. The wafer 101 is attached to the edge 15 of the first carrier 10. For example, in some embodiments, an adhesive 31 (eg, a thermoplastic adhesive) is used to attach the wafer 101 to the edge 15. More specifically, the adhesive 31 can be disposed between the edge 15 of the first carrier 10 and the portion of the core material 24 that extends beyond the upper layer 22 of the second carrier 22, so that when the wafer 101 is covered by the carrier 100 When holding, the wafer 101 contacts the adhesive 31. In this way, the wafer 101 is physically attached to the first carrier 10.

The wafer 101 may be oriented such that its first surface 121 (for example, the top surface) is a free surface not in contact with the dual carrier 100. Conversely, the opposite second surface 111 (for example, the bottom surface) is oriented to abut the upper surface of the convex portion 23 (that is, the upper surface of the upper layer 22 of the second carrier 20 ). According to some embodiments, neither the first surface 121 nor the second surface 111 has an adhesive applied to them in order to attach the wafer 101 to the carrier 101. Specifically, in at least one embodiment, the entire BEOL process can be performed in such a way that the adhesive has never been applied to the top surface or the bottom surface of the wafer 101. At most, an adhesive may be present at the sidewall 15 of the opening 17 for positioning the wafer.

FIG. 5B is a cross-sectional view of the dual carrier 100 after wafer thinning according to at least one embodiment. As shown in FIG. 5B, the wafer 101 is thinned to reduce the height of the wafer 101. Specifically, in some embodiments, the wafer 101 may be thinned so that its height is reduced from the original height protruding above the upper layer 12 of the cladding layer of the first carrier 10 to be flush with the upper layer 12 of the cladding layer. .

In some embodiments, the thinning of the wafer 101 can be achieved by polishing. As shown in FIG. 5B, when thinning is performed, the wafer 101 maintains its original orientation when it is attached and connected to the dual carrier 100. That is, the free surface 121 of the wafer 101 is the uppermost surface aligned with the upper layer 12 of the cladding layer, and the bottom surface 111 is positioned to abut the convex portion 23 of the second carrier 20. As described below, the same physical assembly of the wafer 101 in the first carrier 10 can be used for thinning the wafer and for cutting the wafer on a cutting platform.

FIG. 5C is a cross-sectional view of the dual carrier 100 after the wafer 101 is separated from the second carrier 20 of the dual carrier 100, according to at least one embodiment. More specifically, FIG. 5C illustrates the first carrier 10 and the wafer 101 when the wafer 101 is separated from the second carrier 20 after the wafer 101 is thinned. The first carrier 10 holding the wafer 101 is separated from the second carrier 20 to prepare for dicing. The thinned wafer 101 maintains its position relative to the first carrier 10 so as to be held between the edges 15 of the upper layer 12 of the cladding layer, and is supported by the core material 14 extending beyond the edge 15 of the upper layer 12 .

FIG. 5D is a cross-sectional view of a part of the dual carrier 100 after the wafer 101 is separated, according to at least one embodiment. More specifically, FIG. 5D illustrates the second carrier 20 separated from the first carrier 10 holding the thinned wafer 101. The second carrier 20 is separated from the first carrier, so that the convex portion 23 no longer supports the wafer 101, and the bottom surface 111 of the wafer 101 no longer abuts the convex portion 23. On the contrary, except for those parts that are in contact with the edge 15 of the upper layer 12 of the first carrier, the bottom surface 111 is free and unobstructed. In at least one embodiment, the separation of the wafer 101 and the dual carrier 100 can be accomplished by the van der Waals force of the molecules of the individual components; alternatively or in addition, heat-releasing adhesive materials can also be applied.

Figure 6A is a cross-sectional view of a portion of the dual carrier 100 on the platform, according to at least one embodiment. Specifically, FIG. 6A illustrates the first carrier 10 in an inverted direction relative to, for example, FIG. 5C. In at least one embodiment, after the wafer 101 is thinned and the second carrier 20 has been separated from the first carrier, the components of the first carrier 10 holding the wafer 101 are turned upside down. That is, the wafer 101 is turned upside down without removing the wafer 101 from the first carrier 10. The semiconductor device 50 (for example, an integrated circuit) made from the wafer 101 is held in the carrier 100.

As shown in FIG. 6A, when inverted, the surface 111 of the wafer 101 is no longer the bottom surface of the wafer 101; instead, it becomes the top surface, and most of the surface 111 is exposed and unobstructed. In addition, when turned upside down, the surface 121 of the wafer 101 is no longer a free upper surface, but becomes the bottom surface of the wafer 101 instead. In the inverted state, the assembly of the first carrier 10 and the wafer 101 is placed on the cutting platform 40 to prepare the wafer 101 for cutting. After the wafer 101 is placed on the cutting table 40, the cutting tool is placed on the wafer 101.

In this way, the wafer 101 can be transported to the cutting platform 40 without removing the wafer 101 from the first carrier 10, thereby avoiding the need for an additional peeling process to separate the wafer from the support . Specifically, the laser lift-off process can be completely omitted. By omitting the peeling process, the risk of damage to the fragile thin wafer 101 can be reduced. In this way, the yield of wafers can be increased, that is, the damage rate of wafers can be reduced.

Figure 6B is a cross-sectional view of a part of the dual carrier on the platform during wafer dicing, according to at least one embodiment. The wafer 101 is cut into a plurality of dies using a cutting tool, for example, so that the wafer 101 is cut at the demarcation point 60. With the wafer 101 still in the carrier 10, a cutting tool is used for cutting. In other words, the wafer 101 does not need to be transported to another location, and the cutting can be performed in-situ. In other words, it is not necessary to transport the thinned wafer 101 from the thinning position to another position for dicing.

FIG. 6C is a cross-sectional view of a part of the dual carrier 100 on the platform 40 after the wafer 101 has been diced, according to at least one embodiment. More specifically, after cutting using a cutting tool, the wafer 101 is divided into a plurality of individual dies, including two outermost dies 103 (silicon edges) and an inner die 105. Based on various manufacturing reasons related to the BEOL process phenomenon, the outermost die 103 is generally inferior to the inner die 105 and is generally discarded (that is, these portions are the edges that are excluded). The remaining die 105 is retained for further processing. Since the die 105 has been cut and can be separated from the carrier 10, the peeling process is no longer required.

According to some embodiments, after the first carrier 10 is separated from the second carrier 20, the second carrier 20 may be recycled. In some embodiments, after the wafer 101 is cut, both the first carrier 10 and the second carrier 20 can be recycled. As shown in FIG. 6C, the outermost die 103 is adjacent to the position of the adhesive 31 at the edge 15 of the upper layer 12 of the cladding layer of the first carrier. When the first carrier 10 is recovered, the outermost die 103 and the adhesive 31 can be picked out. The adhesive 31 can be removed by applying heat and/or chemical components to the adhesive.

It should be understood that the foregoing embodiments are only illustrative. Other dual carrier geometries can also be used. In addition, the carrier 100 is not limited to a two-piece carrier, and may be formed of fewer or more parts. In addition, in some embodiments, the first carrier 10 and/or the second carrier 20 or other aforementioned components may be used for further processing. For example, in addition to the slicing of the wafer 101, the dicing platform 40 can also be used for manufacturing processes including back grinding of the wafer 101 and other BEOL processing. FIG. 9 shows an exemplary process diagram of a process 900 for manufacturing a dual carrier according to at least one embodiment. The manufacturing process includes constructing the first carrier 10 (901) according to the aforementioned technology. More specifically, the first carrier 10 is made of the core layer 14, the upper layer 12 of the cladding layer, and the lower layer 18 of the cladding layer, and these components can be formed and assembled as described above in conjunction with Figures 7 and 8 . That is, the core layer 14, the upper layer 12, and the lower layer 18 can be made using a dispenser as shown in FIG. 8. The upper layer 12 and the lower layer 18 of the cladding layer may be attached to the core layer 14 by, for example, fusion bonding. Therefore, the core layer 14 is sandwiched between the upper layer 12 and the lower layer 18. The second carrier 20 is made in a similar manner.

In at least one embodiment, after the first carrier 10 is manufactured, the first process (902) of patterning and etching the first carrier 10 is performed. More specifically, the etching prevention layer 16 is provided on the upper layer 12 of the cladding layer for patterning, that is, it is determined which parts will be removed or retained by etching. Then, etching (for example, wet etching) is performed to remove a part of the upper cladding layer 12 to expose a part of the core layer 14. In this way, a stepped portion of the carrier 10 is formed, which has a side wall 15. Then, a second process of patterning and etching (903) is performed. In the second process, the etching prevention layer 16 is provided so as to extend along the main surface of the upper layer 12 of the cladding layer and beyond the sidewall 15. Etching (for example, wet etching) is performed to form an opening 17, which divides the first carrier 10 into a first section A and a second section B as shown in FIG. 3B, thereby obtaining a segmented carrier (904).

The process 900 further includes constructing the second carrier 20 (905). The core layer 24, the upper layer 22 of the cladding layer, and the lower layer 28 of the cladding layer are formed, and the core layer 24 is attached to the upper layer 22 and the lower layer 28 according to the technique shown and described above in conjunction with FIGS. 7 and 8. Subsequently, the second carrier 20 is patterned and etched (906). The etching prevention layer 26 is placed on the upper layer 22 of the cladding layer. Etching (for example, wet etching) is performed so that the resulting carrier 20 includes a substrate formed by the lower layer 28 of the cladding layer, and protrusions 23 extending from the substrate and including the core layer 24 and the upper layer 22 as a platform. Then the first carrier 10 and the second carrier 20 are assembled together (907).

Specifically, the section A of the first carrier 10 is located on the first side of the substrate of the second carrier 20, that is, on the first substrate portion, and the section B of the first carrier 10 is located on the second carrier 20 The second side of the base, that is, in the second base portion, the second side is opposite to the first side, and there is a protrusion 23 between the sections A and B. As described above, when the second carrier 20 and the first carrier 10 are assembled together, the overlying layer 22 of the second carrier 20 is flush with the height of the core material layer 14 of the first carrier 10. It should be understood that the first carrier 10 and the second carrier 20 can be constructed at the same time, or the first carrier 10 can be constructed before the second carrier 20 is constructed, or the second carrier 20 can be constructed before the first carrier 10 is constructed.

As used herein, the terms “connected” or “coupled” and the like mean that two components are directly or indirectly joined to each other. Such engagement may be fixed (eg, permanent) or movable (eg, removable or releasable). This joining can be achieved by two members or two members and any other intermediate member being integrally formed with each other as an individual whole, or by attaching two members or two members and any other intermediate member to each other.

References to the positions of elements (for example, "top", "bottom", "above", "below", etc.) herein are only used to describe the orientation of each element in the drawings. It should be noted that according to other exemplary embodiments, the orientation of various elements may be different, and this case is intended to cover such variations.

It should be noted that the configuration and arrangement of the various example embodiments are merely illustrative. Although only some embodiments are described in detail in this case, those skilled in the art who have reviewed this case will easily understand that many modifications are possible (for example, changes in the size, size, structure, shape and ratio of various elements, various parameters , Installation arrangement, material use, direction, etc.) without materially departing from the novel teachings and advantages of the subject matter described herein.

For example, an element represented as integrally formed may be composed of multiple parts or elements, the position of the element may be reversed or changed in other ways, and the nature or number or position of discrete elements may be modified or changed. According to alternative embodiments, the order of any process or method steps may be changed or re-sequenced. In the design, operating conditions, and arrangement of various exemplary embodiments, other substitutions, modifications, changes, and omissions may also be made within the scope of not departing from the concepts presented herein.

Although this specification contains many specific implementation details, these should not be construed as limiting any embodiment or the scope of protection that may be claimed, but only a description of the characteristics specific to the specific implementation of the specific embodiment. In the context of separate implementations, certain features described in this specification can also be implemented in combination in individual implementations.

Conversely, various features described in the context of individual embodiments can also be implemented in multiple embodiments separately or in any suitable subcombination. In addition, although the above may describe certain features as acting in certain combinations, and even initially claiming so, in some cases one or more of the claimed combinations may be removed from the combination, and The claimed combination may be for a sub-combination, or a variant of the sub-combination.

10: The first carrier 12: Upper layer of cladding 13: Stepped part 14: core material 15: side wall 16: Etching prevention layer 17: opening 18: Lower layer of cladding 20: second carrier 22: Upper layer of cladding 23: Convex 24: core material 26: Etching prevention layer 28: Lower layer of cladding 31: Adhesive 40: Cutting table level 50: Semiconductor components 60: Demarcation point 100: dual carrier 101: Wafer 102: core layer 103: Outermost Die 104: first cladding 105: internal grain 106: second cladding 111: second surface 121: first surface 200: glass products 220: Lower overflow distributor 222: Slot 224: The first glass composition 226: External forming surface 228: External forming surface 230: traction line 240: Upper overflow distributor 242: Slot 244: second glass composition 246: External forming surface 248: External forming surface 300: Overflow distributor 900: Process 901: step 902: step 903: step 904: step 905: step 906: step 907: step A: section B: section

The above and other features of this case will become clearer and more obvious through the following description in conjunction with the accompanying drawings and the scope of the attached patent application. It should be understood that the drawings only show a few implementations according to the case, and therefore should not be considered as a limitation of its scope. The case will be described with additional features and details by using the drawings.

Figure 1 is a cross-sectional view of a dual carrier on which wafers are placed according to at least one embodiment.

Figure 2A is a cross-sectional view of the first carrier of the dual carrier before patterning, according to at least one embodiment.

Figure 2B is a cross-sectional view of the first carrier of the dual carrier after patterning, according to at least one embodiment.

Figure 2C is a cross-sectional view of the first carrier of the dual carrier after etching, according to at least one embodiment.

Figure 2D is a top view of the first carrier as shown in Figure 2B, according to at least one embodiment.

Figure 2E is a top view of the first carrier as shown in Figure 2C, according to at least one embodiment.

FIG. 3A is a cross-sectional view of the first carrier after being patterned to form through holes, according to at least one embodiment.

FIG. 3B is a cross-sectional view of the first carrier after etching and through-hole formation, according to at least one embodiment.

Figure 3C is a top view of the first carrier as shown in Figure 3A, according to at least one embodiment.

Figure 3D is a top view of the first carrier as shown in Figure 3B, according to at least one embodiment.

Figure 4A is a cross-sectional view of the second carrier of the dual carrier after patterning, according to at least one embodiment.

Figure 4B is a cross-sectional view of the second carrier after being etched to form a platform, according to at least one embodiment.

Figure 4C is a top view of the second carrier as shown in Figure 4A, according to at least one embodiment.

Figure 4D is a top view of the second carrier as shown in Figure 4B, according to at least one embodiment.

Figure 5A is a cross-sectional view of a dual carrier with wafer attached, according to at least one embodiment.

Figure 5B is a cross-sectional view of the dual carrier after wafer polishing, according to at least one embodiment.

FIG. 5C is a cross-sectional view of the dual carrier after the wafer is separated from the second carrier of the dual carrier, according to at least one embodiment.

Figure 5D is a cross-sectional view of a part of the dual carrier after wafer separation, according to at least one embodiment.

Figure 6A is a cross-sectional view of a part of a dual carrier on a platform, according to at least one embodiment.

Figure 6B is a cross-sectional view of a part of the dual carrier on the platform during wafer dicing, according to at least one embodiment.

Figure 6C is a cross-sectional view of a part of the dual carrier on the platform after the wafer has been diced, according to at least one embodiment.

Figure 7 is a cross-sectional view of a glass product, according to at least one embodiment.

Figure 8 is a cross-sectional view of an overflow distributor that can be used to form glass products, according to at least one embodiment.

Figure 9 shows a process for manufacturing a dual carrier, according to at least one embodiment.

Refer to the drawings in the following detailed description. In the drawings, similar symbols generally indicate similar components unless the context indicates otherwise. The illustrative embodiments described in the detailed description, drawings, and scope of patent application are not limitative. Without departing from the spirit or scope of the subject matter proposed in this case, other implementation manners can be used, and other changes can be made. It can be easily understood that, as shown in the general description of the case and the accompanying drawings, the various aspects of the case can be arranged, replaced, combined and designed in various configurations, which are clearly regarded as part of the content of the case.

Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date and number) no

10: The first carrier

20: second carrier

100: dual carrier

101: Wafer

Claims (20)

A carrier component, including: A first carrier including an opening for accommodating a wafer, the first carrier is divided into a first section and a second section opposite to the first section; and A second carrier, including: A protrusion for supporting the wafer; and A substrate is disposed under the convex portion, the substrate is configured to extend in the lateral direction on both sides of the convex portion to support the first section and the second section of the first carrier on the convex portion On opposite sides. The carrier assembly according to claim 1, wherein the second carrier is configured to support the wafer without an adhesive between the bottom of the wafer and the second carrier. The carrier assembly according to claim 1, wherein the first section of the first carrier includes: A first cladding; A second cladding; and A core layer between the first cladding layer and the second cladding layer, The length of the first cladding layer is shorter than that of the second cladding layer and the core layer. The carrier assembly according to claim 3, wherein the first cladding layer, the second cladding layer, and the core layer all comprise glass, and the thermal expansion coefficient of the core layer is greater than that of the first cladding layer or the second cladding layer The coefficient of thermal expansion. The carrier assembly according to claim 1, wherein the opening is formed such that the distance between the first cladding layer of the first section and a first cladding layer of the second section exceeds the first section The distance between the second cladding layer and a second cladding layer of the second section. The carrier assembly according to any one of claims 1 to 5, wherein the first section and the second section of the first carrier both include: A first cladding; A second cladding; and A core layer between the first cladding layer and the second cladding layer, The length of the first cladding layer is shorter than that of the second cladding layer and the core layer. The carrier assembly according to any one of claims 1 to 5, wherein the first carrier is formed to support the wafer when the second carrier is separated from the first carrier. The carrier assembly according to any one of claims 1 to 5, wherein the opening is formed in a T shape. The carrier assembly according to any one of claims 1 to 5, wherein the first carrier is formed to maintain the position of the wafer when the first carrier is inverted, and the wafer is accommodated in the opening. The carrier assembly according to any one of claims 1 to 5, further comprising a plurality of openings. The carrier assembly according to claim 3, wherein the ratio of the thickness of the core layer to the thickness of the first carrier is at least about 0.8. A method for processing a wafer, including the following steps: Supporting the wafer in a first carrier, wherein the first carrier system is supported by a second carrier; Thinning the wafer when the wafer is in the first carrier; Separating the first carrier from the second carrier; Invert the first carrier; and The first carrier is placed on a cutting platform. The method according to claim 12, further comprising the following steps: cutting the wafer while placing the wafer upside down on the cutting platform and holding it in the first carrier to generate a plurality of dies. The method according to claim 13, further comprising the step of: removing the dies when the dies are located on the cutting platform and in the first carrier. The method according to any one of claims 12 to 14, further comprising the step of: transporting the wafer to the cutting platform while supporting the wafer with the first carrier. A method of manufacturing a carrier assembly includes: Construct a first carrier of the carrier component through the following steps: Attaching a first cladding layer of the first carrier to a first core layer; and Attaching a second cladding layer of the first carrier to the first core layer such that the first core layer is sandwiched between the first cladding layer and the second cladding layer of the first carrier; Performing a first etching process on the first carrier to expose a part of the first core layer; and A second etching process is performed on the first carrier to form a through hole, wherein the formation of the through hole divides the first carrier into a first section and a second section. The method according to claim 16, further comprising: Construct a second carrier through the following steps: Attaching a first cladding layer of the second carrier to a second core layer; and Attaching a second cladding layer of the second carrier to the first core layer such that the first core layer is sandwiched between the first cladding layer and the second cladding layer of the second carrier; and A first etching process is performed on the second carrier to form a protrusion and a substrate. The method according to claim 17, further comprising the steps of: by placing the first section above a first portion of the base of the second carrier on a first side of the convex portion, and The first carrier and the second carrier are assembled by placing the second section above a second part of the base of the second carrier on a second side of the convex portion, wherein the first carrier One side is opposite to the second side. The method according to any one of claims 16 to 18, wherein the first etching process includes disposing an etching prevention layer on a portion of the first cladding layer of the first carrier, and the second etching process includes The etching prevention layer is arranged to extend beyond the edge of the first cladding layer. The method according to claim 17, wherein the first cladding layer and the second cladding layer of the first carrier are attached to the first core layer through a fusion process.

Images