TW202043534A - Vaporizer and method for manufacturing the same capable of heating raw material mist under precise temperature management - Google Patents

Vaporizer and method for manufacturing the same capable of heating raw material mist under precise temperature management Download PDF

Info

Publication number
TW202043534A
TW202043534A TW108118522A TW108118522A TW202043534A TW 202043534 A TW202043534 A TW 202043534A TW 108118522 A TW108118522 A TW 108118522A TW 108118522 A TW108118522 A TW 108118522A TW 202043534 A TW202043534 A TW 202043534A
Authority
TW
Taiwan
Prior art keywords
flow path
raw material
vaporizer
main part
holes
Prior art date
Application number
TW108118522A
Other languages
Chinese (zh)
Other versions
TWI734120B (en
Inventor
鈴木裕
斎藤隆
Original Assignee
日商威爾康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商威爾康股份有限公司 filed Critical 日商威爾康股份有限公司
Priority to TW108118522A priority Critical patent/TWI734120B/en
Publication of TW202043534A publication Critical patent/TW202043534A/en
Application granted granted Critical
Publication of TWI734120B publication Critical patent/TWI734120B/en

Links

Images

Abstract

The present invention provides a vaporizer capable of heating raw material mist under precise temperature management to thereby obtain a gas raw material which is adjusted to a required temperature with very little temperature deviation and producing almost no precipitates. The present invention relates to a vaporizer for obtaining a gas raw material for film formation. The vaporizer heats and vaporizes the raw material mist to obtain the gas raw material for film formation, and includes a metal main part which is internally provided with first flow paths through which the raw material mist flows and second flow paths through which a heat medium for heating the raw material mist flows. The equivalent area circle diameter of the cross section of the first flow path is 5 mm or less, and the equivalent area circle diameter of the cross section of the second flow path is 2 mm or less. In the main part, there are no gaps aside from the second flow paths between one of the first flow paths and another of the first flow paths adjacent thereto.

Description

氣化器及其製造方法Vaporizer and manufacturing method thereof

本發明係關於一種氣化器及其製造方法。The invention relates to a gasifier and a manufacturing method thereof.

作為使用氣體原料於對象物之表面形成膜之方法,例如可列舉CVD(Chemical vapor deposition,化學氣相沈積)法。例如於半導體器件之製造製程中,通常將若干薄膜利用CVD法形成於晶圓上。亦存在如下情形:藉由向形成於晶圓上之薄膜上利用CVD法吹送蝕刻氣體而去除一部分薄膜,從而進行圖案化。As a method of forming a film on the surface of an object using a gas raw material, for example, a CVD (Chemical Vapor Deposition) method can be cited. For example, in the manufacturing process of semiconductor devices, several thin films are usually formed on a wafer by a CVD method. There are also cases where a part of the film is removed by blowing an etching gas onto the film formed on the wafer by the CVD method, thereby performing patterning.

作為用以獲得於CVD法等中用作薄膜材料或蝕刻材之氣體原料之方法,先前提出有若干種方法。As a method for obtaining a gas raw material used as a thin film material or an etching material in a CVD method or the like, several methods have been previously proposed.

例如於專利文獻1中,記載有一種液體原料之氣化方法,其特徵在於:其係將儲存於液槽之液體原料藉由起泡方式氣化者,且具有如下步驟:利用特定流量之載氣使上述液槽內之上述液體原料藉由起泡而氣化,產生高濃度之原料氣體;將高濃度之上述原料氣體與稀釋用氣體混合,使高濃度之上述原料氣體稀釋為特定濃度之上述原料氣體;及以成為特定濃度之上述原料氣體成為特定流量之方式進行流量控制,將經流量控制之特定濃度之上述原料氣體導入至對被處理物進行特定處理之處理室。並且,記載有:根據此種方法,即便為低流量亦能夠一面高精度地控制特定濃度之原料氣體一面將其穩定地供給,又,藉由用於平坦化製程中之CVD裝置等,可進行穩定之低濃度之摻雜,從而可提高絕緣膜之可靠性。For example, Patent Document 1 describes a method for vaporizing liquid raw materials, which is characterized in that it is a method of vaporizing liquid raw materials stored in a liquid tank by bubbling, and has the following steps: using a carrier with a specific flow rate The gas vaporizes the liquid raw material in the liquid tank by bubbling to produce a high-concentration raw material gas; mix the high-concentration raw material gas with the dilution gas to dilute the high-concentration raw material gas to a specific concentration The raw material gas; and the flow control is performed so that the raw material gas of a specific concentration becomes a specific flow rate, and the raw material gas of the specific concentration controlled by the flow rate is introduced into a processing chamber for specific processing of the object to be processed. In addition, it is stated that according to this method, even at low flow rates, it is possible to control a specific concentration of raw material gas with high accuracy while supplying it stably. In addition, it can be performed by a CVD device used in a planarization process. Stable low-concentration doping can improve the reliability of the insulating film.

例如於專利文獻2中,記載有一種CVD用氣化器,其特徵在於,具有:孔口管,其具有使2種以上之原料溶液呈微粒子狀或霧狀分散於載氣中時之一個氣體通路;複數個原料溶液用通路,其等相互分離地供給與上述孔口管之上述氣體通路連通時之上述2種以上之原料溶液;載氣用通路,其將上述載氣與上述2種以上之原料溶液分別相互分離地供給至上述孔口管;及氣化管,其使藉由上述孔口管而分散之上述2種以上之原料溶液氣化;且噴出上述孔口管之氣體之噴出部被插入至上述氣化管內,上述噴出部形成為越朝向前側則外徑越小之凸形狀。並且,記載有:根據此種CVD用氣化器,可提供一種能夠使多種原料溶液呈微粒子狀或霧狀分散於載氣中,可不易發生堵塞,且可長時間高精度地控制CVD用原料溶液之流量的CVD用氣化器。For example, Patent Document 2 describes a vaporizer for CVD, which is characterized by having an orifice tube, which has a gas for dispersing two or more raw material solutions in the form of particles or mist in a carrier gas Passage; a plurality of raw material solution passages, which separately supply the above-mentioned two or more kinds of raw material solutions when communicating with the gas passage of the orifice tube; a carrier gas passage that separates the above-mentioned carrier gas and the above-mentioned two or more kinds The raw material solutions are separately supplied to the orifice tube; and a vaporization tube that vaporizes the two or more raw material solutions dispersed by the orifice tube; and ejects the gas from the orifice tube The portion is inserted into the vaporization tube, and the ejection portion is formed in a convex shape whose outer diameter decreases toward the front side. In addition, it is stated that according to this type of vaporizer for CVD, it is possible to provide a solution capable of dispersing various raw material solutions in the form of particles or mist in the carrier gas, preventing clogging, and controlling the raw materials for CVD with high precision for a long time. Vaporizer for CVD of solution flow.

例如於專利文獻3中,記載有一種氣化器,其特徵在於具備:氣化室,其由加熱器加熱;一次過濾器,其配置於上述氣化室之下端部,由加熱器加熱;液體原料供給部,其將經流量調節之液體原料自上述氣化室之上方朝向上述一次過濾器滴加;載氣導入路,其將載氣導向上述一次過濾器之下表面;及原料導出路,其用以將上述載氣及氣化後之上述液體原料之混合氣體自上述氣化室之上部排出。並且,記載有:根據此種氣化器,由於可利用一次過濾器使液體原料氣化並且霧化,進而於氣化室中使霧氣化,故而與僅施加熱之先前之氣化器相比,發揮較高之氣化效率,由於氣化效率較高,故而即便於較低溫度下亦能夠使液體原料氣化,即便為熱分解性較高之液體原料,亦能夠防止氣化器內部之熱分解產物及聚合物之沈積及流路之堵塞,並且可使大量之液體原料氣化。For example, Patent Document 3 describes a vaporizer characterized by including: a vaporization chamber, which is heated by a heater; a primary filter, which is arranged at the lower end of the vaporization chamber and is heated by a heater; and liquid The raw material supply part, which drops the liquid raw material whose flow rate is adjusted from above the gasification chamber toward the primary filter; a carrier gas introduction path, which guides the carrier gas to the lower surface of the primary filter; and a raw material outlet path, It is used to discharge the mixed gas of the carrier gas and the gasified liquid raw material from the upper part of the gasification chamber. In addition, it is described that according to this type of vaporizer, since the liquid raw material can be vaporized and atomized by a primary filter, and then the mist is vaporized in the vaporization chamber, it is compared with the previous vaporizer that only applies heat , Exert a higher gasification efficiency. Due to the higher gasification efficiency, the liquid raw material can be gasified even at a lower temperature. Even the liquid raw material with high thermal decomposition property can prevent the inside of the gasifier. Deposition of thermal decomposition products and polymers and blockage of flow paths, and can vaporize a large amount of liquid raw materials.

例如於專利文獻4中,記載有一種氣化器,其特徵在於,具備:外部區塊,其具有嵌埋有用以對液體原料或液體原料與載氣之混合氣體進行加熱之加熱器的圓形氣化室形成用孔;圓筒形之內部區塊,其嵌埋有用以對上述液體原料或上述液體原料與上述載氣之混合氣體進行加熱之加熱器,且直徑略小於上述氣化室形成用孔;且於上述外部區塊形成有:導入孔,其將上述液體原料或上述液體原料與上述載氣之混合氣體導入至由上述氣化室形成用孔及上述內部區塊構成之氣化流路;及導出孔,其將氣化後之液體原料氣體或者氣化後之液體原料氣體與上述載氣之混合氣體自該氣化流路排出。並且,記載有:根據此種氣化器,藉由利用由氣化室形成用孔及內部區塊形成之間隙寬度較窄之狹縫狀氣化流路之溫度邊界層效應及利用圓弧之離心力效應,能夠有效率地自器壁對混合氣體供熱,進而藉由隔熱膨脹及利用加熱器對該隔熱膨脹區域進行之快速供熱等之協同效應,可實現液體原料之完全氣化。 [先前技術文獻] [專利文獻]For example, in Patent Document 4, a vaporizer is described, which is characterized by having: an external block having a circular heater embedded with a heater for heating a liquid raw material or a mixed gas of a liquid raw material and a carrier gas A hole for forming a gasification chamber; a cylindrical inner block embedded with a heater for heating the liquid raw material or the mixed gas of the liquid raw material and the carrier gas, and the diameter is slightly smaller than the gasification chamber Hole; and formed in the outer block: an introduction hole, which introduces the liquid raw material or the mixed gas of the liquid raw material and the carrier gas to the gasification formed by the gasification chamber forming hole and the internal block Flow path; and outlet holes, which discharge the vaporized liquid raw material gas or the mixed gas of the vaporized liquid raw material gas and the above-mentioned carrier gas from the vaporization flow path. In addition, it is described that according to this type of vaporizer, the temperature boundary layer effect of the narrow slit-shaped vaporization flow path formed by the gasification chamber forming hole and the internal block is used, and the arc is used. The centrifugal force effect can efficiently heat the mixed gas from the wall, and then through the synergistic effect of adiabatic expansion and rapid heating of the heat-insulated expansion area by a heater, the complete gasification of the liquid raw material can be realized . [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開平9-181061號公報 [專利文獻2]日本專利第3896594號公報 [專利文獻3]日本專利特開2007-1002007號公報 [專利文獻4]日本專利特開2013-23700號公報[Patent Document 1] Japanese Patent Laid-Open No. 9-181061 [Patent Document 2] Japanese Patent No. 3,896,594 [Patent Document 3] Japanese Patent Laid-Open No. 2007-1002007 [Patent Document 4] Japanese Patent Laid-Open No. 2013-23700

[發明所欲解決之問題][The problem to be solved by the invention]

然而,於如專利文獻1~4所例示之先前方法中,難以進行細緻之溫度管理,故而難以獲得調整至所需溫度之氣體原料,有獲得與所需溫度不同之溫度之氣體原料的傾向。又,氣體原料之溫度之偏差亦較大。進而,亦存在於氣化器內產生固體原料等析出物之情形。However, in the prior methods as exemplified in Patent Documents 1 to 4, it is difficult to perform detailed temperature management, so it is difficult to obtain a gas raw material adjusted to a desired temperature, and there is a tendency to obtain a gas raw material with a temperature different from the desired temperature. In addition, the temperature deviation of the gas raw material is also large. Furthermore, there are cases where precipitates such as solid raw materials are generated in the gasifier.

本發明之目的在於解決上述問題。 即,本發明之目的在於提供一種氣化器,其可獲得調整至所需溫度、且溫度之偏差非常少之氣體原料,進而幾乎不產生析出物,或者即便產生亦難以沈積。認為於可獲得調整至所需溫度、且溫度之偏差非常少之氣體原料之情形時,可使氣化器小型化。又,本發明之目的在於提供一種此種氣化器之製造方法。 [解決問題之技術手段]The purpose of the present invention is to solve the above-mentioned problems. That is, the object of the present invention is to provide a gasifier that can obtain a gas raw material adjusted to a desired temperature with a very small temperature deviation, and further produces almost no precipitates or hardly deposits even if they do. It is considered that the gasifier can be miniaturized when a gas raw material adjusted to a required temperature with very little temperature deviation can be obtained. Moreover, the object of the present invention is to provide a method of manufacturing such a vaporizer. [Technical means to solve the problem]

本發明人為了解決上述問題而進行銳意研究,從而完成了本發明。 本發明為以下之(1)~(7)。 (1)一種獲得成膜用氣體原料之氣化器,其係藉由對原料霧進行加熱使其氣化而獲得成膜用氣體原料者,且 於包含金屬材料之主部之內部具有供上述原料霧流通之第1流路及供對上述原料霧進行加熱之熱介質流通之第2流路, 上述第1流路之剖面之等面積圓等效直徑為5 mm以下,上述第2流路之剖面之等面積圓等效直徑為2 mm以下, 於上述主部之內部,在1個第1流路、與存在於其旁邊之其他第1流路之間,不存在除第2流路以外之空隙。 (2)如上述(1)之獲得成膜用氣體原料之氣化器,其中 於相對於上述原料霧流動之方向垂直之方向上之上述主部之剖面中, 於將上述熱介質一面蛇行一面流通之方向設為左右方向之情形時,上述第1流路之孔於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置, 於在上下方向相鄰之行狀之孔之層之間存在上述第2流路,上述第2流路與上述第1流路並不連接,上述第2流路以避開自上下方向夾持之行狀之孔之層中之上述第1流路之孔之方式於上下方向蛇行。 (3)如上述(1)或(2)之獲得成膜用氣體原料之氣化器,其於將上述第1流路於其長度方向上分為複數個部位之情形時,以可針對該等部位之每一個調整存在於上述第1流路內部之上述原料霧之溫度之方式構成。 (4)如上述(1)至(3)中任一項之獲得成膜用氣體原料之氣化器,其中於將上述主部中之形成有供上述原料霧流入之孔之面設為入側面,將上述主部中之形成有供排出上述氣體原料之孔之面設為出側面之情形時,自上述入側面朝向上述出側面,存在於其內部之上述第1流路之等面積圓等效直徑逐漸發生變化。 (5)如上述(1)至(4)中任一項之獲得成膜用氣體原料之氣化器,其中於上述第1流路以成為鉛直方向之方式配置之情形時,上述第2流路形成於水平方向,其等直行。 (6)如上述(1)至(5)中任一項之獲得成膜用氣體原料之氣化器,其構成為於上述主部之外表面、與上述第1流路及上述第2流路之至少一部分之間具有空隙,從而使內部之熱難以向外部釋出。 (7)一種氣化器之製造方法,其包括如下步驟:準備複數片金屬製板材,於其主面上形成成為上述第2流路之一部分之溝槽,進而形成自其一主面向另一主面貫通之成為上述第1流路之一部分之貫通孔;及 使上述金屬製板材之主面彼此密接並藉由擴散接合而結合; 從而獲得如上述(1)至(6)中任一項之氣化器。 [發明之效果]In order to solve the above-mentioned problems, the present inventors conducted intensive research and completed the present invention. The present invention is the following (1) to (7). (1) A vaporizer for obtaining gas raw materials for film formation, which is obtained by heating and vaporizing raw material mist to obtain gas raw materials for film formation, and Inside the main part containing the metal material, there are a first flow path through which the raw material mist circulates and a second flow path through which a heat medium for heating the raw material mist circulates, The equivalent circle equivalent diameter of the cross section of the first flow path is 5 mm or less, and the equivalent circle equivalent diameter of the cross section of the second flow path is 2 mm or less, In the inside of the main part, there is no gap other than the second flow path between the first flow path and the other first flow paths existing beside it. (2) A vaporizer for obtaining gas raw materials for film formation as described in (1) above, wherein In the cross section of the main part in a direction perpendicular to the direction in which the raw material mist flows, When the direction in which the heat medium flows while meandering is the left and right direction, the holes of the first flow path are arranged in rows in the left and right direction, and the rows of holes are arranged to form layers in the up and down direction, The second flow path exists between the layers of rows of holes that are adjacent in the vertical direction, and the second flow path is not connected to the first flow path. The second flow path avoids being clamped in the vertical direction. The holes of the first flow path in the layer of rows of holes meander in the up and down direction. (3) The vaporizer for obtaining a gas raw material for film formation as described in (1) or (2) above, when the first flow path is divided into a plurality of locations in the longitudinal direction, can be targeted at Each of the other parts is configured to adjust the temperature of the raw material mist existing in the first flow path. (4) The vaporizer for obtaining a gas raw material for film formation as described in any one of (1) to (3) above, wherein the surface of the main part formed with a hole for the raw material mist to flow into is set as an inlet On the side surface, when the surface in the main part on which the hole for discharging the gas raw material is formed is the exit side, the equal-area circle of the first flow path existing in the inside from the entrance side to the exit side The equivalent diameter gradually changes. (5) A vaporizer for obtaining a gas raw material for film formation according to any one of (1) to (4) above, wherein when the first flow path is arranged in a vertical direction, the second flow The road is formed in the horizontal direction, and it goes straight. (6) A vaporizer for obtaining a gas raw material for film formation according to any one of (1) to (5) above, which is configured to be connected to the first flow path and the second flow on the outer surface of the main part There is a gap between at least part of the road, so that the internal heat is difficult to release to the outside. (7) A method of manufacturing a vaporizer, which includes the steps of preparing a plurality of metal plates, forming a groove that becomes a part of the second flow path on the main surface, and then forming a groove from one main surface to the other. A through hole that penetrates through the main surface and becomes a part of the above-mentioned first flow path; and Making the main surfaces of the above-mentioned metal plates close to each other and joined by diffusion bonding; Thus, the gasifier according to any one of (1) to (6) above is obtained. [Effects of Invention]

根據本發明,可提供一種氣化器,其由於能夠將原料霧於細緻之溫度管理之下進行加熱,故而可獲得調整至所需溫度,且溫度之偏差非常少之氣體原料,進而幾乎不產生析出物。又,可提供此種氣化器之製造方法。According to the present invention, it is possible to provide a gasifier, which can heat the raw material mist under careful temperature management, so that the gas raw material can be adjusted to the required temperature and the temperature deviation is very small, and almost no production Precipitate. In addition, a manufacturing method of such a vaporizer can be provided.

對本發明進行說明。 本發明係一種獲得成膜用氣體原料之氣化器,其係藉由對原料霧進行加熱使其氣化而獲得成膜用氣體原料者,且於包含金屬材料之主部之內部具有供上述原料霧流通之第1流路及供對上述原料霧進行加熱之熱介質流通之第2流路,上述第1流路之剖面之等面積圓等效直徑為5 mm以下,上述第2流路之剖面之等面積圓等效直徑為2 mm以下,於上述主部之內部,在1個第1流路、與存在於其旁邊之其他第1流路之間,不存在除第2流路以外之空隙。 以下,將此種氣化器亦稱為「本發明之氣化器」。The present invention will be explained. The present invention is a vaporizer for obtaining gas raw materials for film formation, which is obtained by heating and vaporizing the raw material mist to obtain the gas raw materials for film formation, and the main part containing the metal material has the supply The first flow path through which the raw material mist flows and the second flow path through which the heat medium for heating the above raw material mist flows. The equal area circle equivalent diameter of the cross section of the first flow path is 5 mm or less, the second flow path The equivalent diameter of the equal-area circle of the cross-section is 2 mm or less. Inside the main part, there is no flow path except the second flow path between the first flow path and the other first flow paths that exist beside it. Beyond the gap. Hereinafter, this type of vaporizer is also referred to as "the vaporizer of the present invention".

又,本發明係一種氣化器之製造方法,其包括如下步驟:準備複數片金屬製板材,於其主面上形成成為上述第2流路之一部分之溝槽,進而形成自其一主面向另一主面貫通之成為上述第1流路之一部分之貫通孔;以及使上述金屬製板材之主面彼此密接並藉由擴散接合而結合;從而獲得本發明之氣化器。 以下,將此種氣化器之製造方法亦稱為「本發明之製造方法」。In addition, the present invention is a method for manufacturing a vaporizer, which includes the steps of preparing a plurality of metal plates, forming a groove that becomes a part of the second flow path on the main surface, and forming a groove from one of the main surfaces. The through hole, which is a part of the first flow path through which the other main surface penetrates, and the main surfaces of the metal plate material are brought into close contact with each other and joined by diffusion bonding, thereby obtaining the vaporizer of the present invention. Hereinafter, the manufacturing method of such a vaporizer is also referred to as "the manufacturing method of the present invention".

<本發明之氣化器> 對本發明之氣化器進行說明。 本發明之氣化器係藉由對原料霧進行加熱使其氣化而獲得成膜用氣體原料之氣化器。<The vaporizer of the present invention> The vaporizer of the present invention will be described. The vaporizer of the present invention is a vaporizer that obtains a gas raw material for film formation by heating the raw material mist to vaporize it.

作為本發明之氣化器所加熱之對象物之原料霧包含經霧化之液體原料,較佳為經霧化之液體原料與載氣之混合物。 此處,載氣及液體原料之種類並無特別限定,例如可為作為半導體器件之製造製程之一部分,利用CVD法形成薄膜時或對薄膜之一部分進行蝕刻時,先前所使用之載氣及液體原料。The raw material mist used as the object to be heated by the vaporizer of the present invention includes an atomized liquid raw material, and is preferably a mixture of the atomized liquid raw material and a carrier gas. Here, the types of carrier gas and liquid materials are not particularly limited. For example, they may be the carrier gas and liquid previously used as part of the manufacturing process of semiconductor devices, when a film is formed by CVD or when a part of the film is etched. raw material.

例如作為載氣,可列舉氮氣、氬氣等惰性氣體、或氫氣。For example, as the carrier gas, inert gases such as nitrogen and argon, or hydrogen can be cited.

例如作為液體原料,可列舉包含氰、氟化物、銦、鎵、鋁、鉭等之溶液。銦、鎵、鋁、鉭等之溶液可用於成膜用。 另一方面,氰、氟化物等之溶液可用於去除所形成之薄膜之一部分之圖案化。 於使用氰、氟化物等之蝕刻氣體作為液體原料之情形時,下述主部較佳為包含耐腐蝕性優異之金屬材料(鈦、不鏽鋼等)。For example, as a liquid raw material, a solution containing cyanide, fluoride, indium, gallium, aluminum, tantalum, etc. can be mentioned. Solutions of indium, gallium, aluminum, tantalum, etc. can be used for film formation. On the other hand, solutions of cyanide, fluoride, etc. can be used to remove part of the patterning of the formed thin film. When an etching gas such as cyanide or fluoride is used as a liquid raw material, the following main part preferably contains a metal material (titanium, stainless steel, etc.) with excellent corrosion resistance.

原料霧包含此種液體原料經霧化而得者。 將液體原料霧化之方法並無特別限定,例如可為先前公知之方法。具體而言,例如可列舉如下方法:將載氣及液體原料導入至噴霧器,獲得載氣內分散有霧狀之液體原料之霧。The raw material mist includes those obtained by atomizing such liquid raw materials. The method of atomizing the liquid raw material is not particularly limited, and for example, it may be a previously known method. Specifically, for example, the following method can be cited: a carrier gas and a liquid raw material are introduced into a sprayer to obtain a mist in which a mist-like liquid raw material is dispersed in the carrier gas.

原料霧亦可包含除載氣及經霧化之液體原料以外者。例如原料霧亦可包含由於霧化不充分而未變成霧狀之液體原料。The raw material mist may also include other than the carrier gas and atomized liquid raw materials. For example, the raw material mist may also include liquid raw materials that have not become mist due to insufficient atomization.

本發明之氣化器例如具備圖1所示之構成。 圖1係表示本發明之氣化器之較佳態樣之概略立體圖。 於圖1中,本發明之氣化器10具有主部12,該主部12於內部具有供原料霧流通之第1流路1及供對原料霧進行加熱之熱介質流通之第2流路2,進而具有:供給部14,其用以向主部12供給原料霧;及排出部16,其收集自主部12排出之氣體原料並向系統外排出。The vaporizer of the present invention has, for example, the structure shown in FIG. 1. Fig. 1 is a schematic perspective view showing a preferred aspect of the vaporizer of the present invention. In FIG. 1, the gasifier 10 of the present invention has a main part 12, and the main part 12 has a first flow path 1 for circulating the raw material mist and a second flow path for heating the raw material mist to flow inside the main part 12 2. It further has: a supply part 14 for supplying the raw material mist to the main part 12; and a discharge part 16 which collects the gaseous raw materials discharged from the main part 12 and discharges them outside the system.

[供給部] 圖2係圖1所示之供給部14之概略立體圖,圖3係圖2中之A-A'線剖視圖。 如圖2、圖3所示,供給部14具備導入原料霧之導入孔141。並且,自導入孔141導入至供給部14之內部之原料霧於自供給部14排出後,向主部12供給。 圖2、圖3所示之供給部14以將自導入孔141導入之原料霧儘可能均等地供給至形成於主部12之表面之複數個第1流路1之入口1Pin之方式構成。具體而言,如圖3所示,以原料霧之流路143之剖面徑(r14 )於供給部14之內部逐漸變寬之方式構成。 供給部14較佳為與主部12同樣地包含金屬材料。 再者,本發明之氣化器較佳為具備供給部。[Supply part] FIG. 2 is a schematic perspective view of the supply part 14 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line AA' in FIG. As shown in FIGS. 2 and 3, the supply part 14 is equipped with the introduction hole 141 which introduces the raw material mist. In addition, the raw material mist introduced from the introduction hole 141 into the inside of the supply unit 14 is discharged from the supply unit 14 and then supplied to the main unit 12. The supply part 14 shown in FIGS. 2 and 3 is configured to supply the raw material mist introduced from the introduction hole 141 to the inlets 1Pin of the plurality of first flow paths 1 formed on the surface of the main part 12 as evenly as possible. Specifically, as shown in FIG. 3, the cross-sectional diameter (r 14 ) of the flow path 143 of the raw material mist gradually widens inside the supply part 14. The supply part 14 preferably contains a metal material like the main part 12. Furthermore, the vaporizer of the present invention preferably includes a supply unit.

[主部] 圖4係圖1所示之主部12之概略立體圖,圖5係圖4中之B-B'線剖視圖。 如圖4、圖5所示,主部12於內部具有供原料霧流通之第1流路1及供對原料霧進行加熱之熱介質流通之第2流路2。[Main part] 4 is a schematic perspective view of the main part 12 shown in FIG. 1, and FIG. 5 is a cross-sectional view taken along line BB' in FIG. As shown in Figs. 4 and 5, the main part 12 has a first flow path 1 through which the raw material mist flows and a second flow path 2 through which a heat medium for heating the raw material mist flows.

於圖4、圖5所示之態樣中,於第1流路1以成為鉛直方向之方式配置之情形時,第2流路2形成於水平方向,且其等直行。此種態樣作為本發明之氣化器之主部較佳。In the aspect shown in FIG. 4 and FIG. 5, when the first flow path 1 is arranged in a vertical direction, the second flow path 2 is formed in the horizontal direction, and it runs straight. This aspect is preferable as the main part of the gasifier of the present invention.

主部可構成為能夠分離成若干個,亦可於1個主部與另一主部之間例如夾持間隔件。 圖6係表示3個主部12a、12b、12c夾持間隔件9a、9b之態樣之概略立體圖,圖7係表示使其分離之狀態之概略立體圖。 間隔件9a、9b例如可為板狀,且形成有自其一主面通向另一主面之貫通孔91。自主部12a排出之原料霧全部彙集在形成於間隔件9a之貫通孔91,藉此,使原料霧之溫度或成分等更為均一化。 如圖6、圖7所示,若主部構成為能夠分離成若干個,則視需要對第1流路等之內部進行清潔變得容易。 再者,於圖6、圖7中例示出具備3個主部及2個間隔件之情形。主部與間隔件之數量並無特別限定。當然,亦可如圖4所示之態樣般不具備間隔件。The main part may be configured to be separable into several, or a spacer may be clamped between one main part and another main part, for example. Fig. 6 is a schematic perspective view showing a state where the three main parts 12a, 12b, 12c sandwich the spacers 9a, 9b, and Fig. 7 is a schematic perspective view showing a state in which they are separated. The spacers 9a and 9b may have a plate shape, for example, and a through hole 91 that leads from one main surface to the other main surface is formed. The raw material mist discharged from the main body 12a is all collected in the through hole 91 formed in the spacer 9a, thereby making the temperature and composition of the raw material mist more uniform. As shown in FIGS. 6 and 7, if the main part is configured to be separable into several parts, it becomes easy to clean the inside of the first flow path and the like as necessary. Furthermore, the case where 3 main parts and 2 spacers are provided is illustrated in FIG. 6, FIG. The number of main parts and spacers is not particularly limited. Of course, the spacer may not be provided as shown in FIG. 4.

間隔件較佳為包含與主部相同之材料。但是,亦可為包含與主部不同之金屬或有機物等者。The spacer preferably includes the same material as the main part. However, it may contain a metal or organic substance different from the main part.

此處,於第2流路2中流通之熱介質只要為可對在第1流路中流通之原料霧進行加熱之流體,則並無特別限定。例如可列舉加熱蒸汽、油等。熱介質之溫度亦無特別限定。例如可使用200~300℃之油作為熱介質。Here, the heat medium flowing in the second flow path 2 is not particularly limited as long as it is a fluid that can heat the raw material mist flowing in the first flow path. For example, heating steam, oil, etc. can be cited. The temperature of the heating medium is also not particularly limited. For example, 200-300°C oil can be used as the heating medium.

如圖4~圖7所示,由供給部14供給之原料霧自形成於主部12之表面之複數個第1流路1之入口1Pin進入第1流路1之內部。並且,原料霧於在第1流路1之內部朝向出口1Pout移動之過程中自第2流路2內之熱介質受熱,當自出口1Pout排出時,原則上成為氣體。As shown in FIGS. 4 to 7, the raw material mist supplied from the supply part 14 enters the first flow path 1 from the inlets 1Pin of a plurality of first flow paths 1 formed on the surface of the main part 12. In addition, the raw material mist receives heat from the heating medium in the second flow path 2 while moving in the first flow path 1 toward the outlet 1Pout, and when it is discharged from the outlet 1Pout, it becomes a gas in principle.

於本發明之氣化器中,主部包含金屬材料。例如亦可包含耐蝕性之合金(鈦、鎳鉻合金、赫史特合金(鎳基合金)或不鏽鋼(例如SUS316L)等金屬材料。即,不存在如組合金屬材料與塑膠材料而構成之情況。 此處,主部可包含2種以上之金屬材料,但較佳為包含1種金屬材料。 此種包含金屬材料、且於內部具備微細之流路之主部可藉由如下方法製造:包括使金屬製板材之主面彼此密接並藉由擴散接合而結合之步驟。In the gasifier of the present invention, the main part contains a metal material. For example, metal materials such as corrosion-resistant alloys (titanium, nickel-chromium alloys, Hirst alloys (nickel-based alloys), or stainless steels (such as SUS316L) can also be included. That is, there is no such thing as a combination of metal materials and plastic materials. Here, the main part may include two or more types of metal materials, but preferably includes one type of metal material. Such a main part containing a metal material and having a fine flow path inside can be manufactured by a method including a step of closely contacting the main surfaces of metal plates and bonding them by diffusion bonding.

又,於主部之內部,原則上不存在除第1流路或第2流路以外之空隙。因此,於主部之內部,在1個第1流路、與存在於其旁邊之其他第1流路之間不存在除第2流路以外之空隙。 對此,使用圖8~圖12進行說明。 圖8、圖10、圖11及圖12均表示第1流路與第2流路垂直交叉之情形。圖9表示圖8中之直線性第2流路置換為蛇行者之態樣。Also, in principle, there are no voids other than the first flow path or the second flow path inside the main part. Therefore, inside the main part, there is no gap other than the second flow path between one first flow path and the other first flow paths existing beside it. This will be explained using FIGS. 8 to 12. Fig. 8, Fig. 10, Fig. 11, and Fig. 12 all show a situation where the first flow path and the second flow path intersect perpendicularly. Fig. 9 shows a state in which the linear second flow path in Fig. 8 is replaced with a snake.

圖8表示本發明之氣化器之主部中之與第1流路垂直之剖面(與第2流路水平之剖面)。亦可認為係圖5之局部放大圖。於圖8所示之態樣中,第1流路之孔表示為Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl。又,於圖8中,第2流路表示為2a、2b、2c、2d。又,圖8中之斜線部意指存在金屬材料。即,於圖8中,空隙僅為第1流路及第2流路。Fig. 8 shows a cross section perpendicular to the first flow path (a cross section horizontal to the second flow path) in the main part of the vaporizer of the present invention. It can also be regarded as a partial enlarged view of FIG. 5. In the aspect shown in FIG. 8, the holes of the first flow path are represented as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl. In addition, in FIG. 8, the second flow paths are represented as 2a, 2b, 2c, and 2d. In addition, the shaded part in FIG. 8 means that there is a metal material. That is, in FIG. 8, the voids are only the first flow path and the second flow path.

於圖8中,例如存在於第1流路之孔Pf旁邊之其他第1流路之孔為孔Pa、Pb、Pc、Pe、Pg、Pi、Pj、Pk。 由圖8可知,孔Pe、Pg中之任一者與孔Pf之間由金屬材料填滿,不存在空隙。 又,孔Pa、Pb、Pc、Pi、Pj、Pk中之任一者與孔Pf之間存在第2流路,但除此以外不存在空隙。In FIG. 8, for example, the holes of the other first flow paths existing beside the hole Pf of the first flow path are the holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk. It can be seen from FIG. 8 that any one of the holes Pe and Pg and the hole Pf are filled with metal material, and there is no gap. Furthermore, there is a second flow path between any one of the holes Pa, Pb, Pc, Pi, Pj, and Pk and the hole Pf, but there is no void other than that.

圖8所示之箭頭概念性地表示熱之移動。若為如圖8所示之態樣,則高效率地進行自第2流路(2a、2b、2c、2d)內之熱介質向第1流路內之原料霧之傳熱。The arrow shown in Figure 8 conceptually represents the movement of heat. If it is the aspect shown in FIG. 8, the heat transfer from the heating medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is performed efficiently.

圖9表示本發明之氣化器之主部之與第1流路垂直之剖面。表示上述圖8中之第2流路並非直線而替換為蛇行者之態樣。 於圖9所示之態樣中,第1流路之孔表示為Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk。又,於圖9中,第2流路表示為2a、2b、2c、2d。又,圖9中之斜線部意指存在金屬材料。即,於圖9中,空隙僅為第1流路及第2流路。Fig. 9 shows a cross section perpendicular to the first flow path of the main part of the vaporizer of the present invention. It shows that the second flow path in FIG. 8 is not a straight line but is replaced by a snake. In the aspect shown in FIG. 9, the holes of the first flow path are represented as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk. In addition, in FIG. 9, the second flow paths are shown as 2a, 2b, 2c, and 2d. In addition, the shaded part in FIG. 9 means that a metal material is present. That is, in FIG. 9, the voids are only the first flow path and the second flow path.

於圖9中,例如存在於第1流路之孔Pf旁邊之其他第1流路之孔為孔Pb、Pc、Pe、Pg、Pi、Pj。 於該情形時,亦與圖8所示之態樣之情形相同,為以下任一者:孔Pb、Pc、Pe、Pg、Pi、Pj中之任一者與孔Pf之間由金屬材料填滿,或者僅存在第2流路(2b、2c)。In FIG. 9, for example, the holes of the other first flow paths existing beside the hole Pf of the first flow path are the holes Pb, Pc, Pe, Pg, Pi, and Pj. In this case, it is also the same as the situation shown in FIG. 8, which is any one of the following: any one of the holes Pb, Pc, Pe, Pg, Pi, Pj and the hole Pf are filled with a metal material Full, or only the second flow path (2b, 2c) exists.

圖9所示之箭頭概念性地表示熱之移動。若為如圖9所示之態樣,則高效率地進行自第2流路(2a、2b、2c、2d)內之熱介質向第1流路內之原料霧之傳熱。The arrow shown in Fig. 9 conceptually represents the movement of heat. If it is the aspect shown in Fig. 9, the heat transfer from the heating medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is performed efficiently.

圖10與本發明之氣化器之主部不符。 圖10係將管狀之第1流路與第2流路呈格子狀組合且於其等之接點處固定者。 於圖10所示之態樣中,第1流路之孔表示為Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl。又,於圖10中,第2流路表示為2a、2b、2c、2d。Figure 10 is not consistent with the main part of the gasifier of the present invention. Fig. 10 is a combination of a tubular first flow path and a second flow path in a lattice shape and fixed at their contact points. In the aspect shown in FIG. 10, the holes of the first flow path are represented as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl. In addition, in FIG. 10, the second flow paths are shown as 2a, 2b, 2c, and 2d.

於圖10中,例如存在於第1流路之孔Pf旁邊之其他第1流路之孔為孔Pa、Pb、Pc、Pe、Pg、Pi、Pj、Pk。 由圖10可知,於孔Pf與孔Pe之間存在空隙γ。又,於孔Pf與孔Pg之間亦同樣存在空隙δ。In FIG. 10, for example, the holes of the other first flow paths existing beside the hole Pf of the first flow path are the holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk. It can be seen from FIG. 10 that there is a gap γ between the hole Pf and the hole Pe. In addition, there is also a gap δ between the hole Pf and the hole Pg.

圖10所示之箭頭概念性地表示熱之移動。若為如圖10所示之態樣,則自第2流路(2a、2b、2c、2d)內之熱介質向第1流路內之原料霧之傳熱僅於第2流路與第1流路之接點處進行。因此,傳熱效率較差。The arrow shown in Fig. 10 conceptually represents the movement of heat. 10, the heat transfer from the heating medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is only between the second flow path and the first flow path. 1 Perform at the contact point of the flow path. Therefore, the heat transfer efficiency is poor.

圖11與本發明之氣化器之主部不符。 圖11係與上述圖10之情形同樣地將管狀之第1流路與第2流路呈格子狀組合,且於其等之接點處固定,進而第1流路彼此亦於其等之接點處固定者。 於圖11所示之態樣中,第1流路之孔表示為Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl。又,於圖11中,第2流路表示為2a、2b、2c、2d。Figure 11 does not correspond to the main part of the gasifier of the present invention. Fig. 11 combines the tubular first flow path and the second flow path in a grid like the case of the above-mentioned Fig. 10, and they are fixed at their joints, and the first flow paths are also connected to each other. Fixed at a point. In the aspect shown in FIG. 11, the holes of the first flow path are represented as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl. In addition, in FIG. 11, the second flow paths are shown as 2a, 2b, 2c, and 2d.

於圖11中,例如存在於第1流路之孔Pf旁邊之其他第1流路之孔為孔Pa、Pb、Pc、Pe、Pg、Pi、Pj、Pk。 由圖11可知,於孔Pf與孔Pa之間存在空隙α及γ。又,於孔Pf與孔Pe之間存在空隙γ及ε。In FIG. 11, for example, the holes of the other first flow paths existing beside the hole Pf of the first flow path are holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk. It can be seen from FIG. 11 that there are voids α and γ between the hole Pf and the hole Pa. In addition, there are gaps γ and ε between the hole Pf and the hole Pe.

圖11所示之箭頭概念性地表示熱之移動。若為如圖11所示之態樣,則自第2流路(2a、2b、2c、2d)內之熱介質向第1流路內之原料霧之傳熱僅於第2流路與第1流路之接點處進行。因此,傳熱效率較差。The arrow shown in Fig. 11 conceptually represents the movement of heat. If it is the state shown in Figure 11, the heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is only between the second flow path and the first flow path. 1 Perform at the contact point of the flow path. Therefore, the heat transfer efficiency is poor.

圖12與本發明之氣化器之主部不符。 圖12所示之態樣與上述圖11所示之態樣不同之部分係第1流路之剖面形狀。即,圖11所示之態樣之第1流路之剖面為圓形,但圖12所示之態樣之第1流路之剖面為矩形。除此以外與圖11所示之態樣同樣地係將管狀之第1流路與第2流路呈格子狀組合且於其等之接點處固定,進而第1流路彼此亦於其等之接點處固定者。 於此種構成之情形時,若與圖11所示之態樣相比則有空隙變少之傾向。然而,即便使管彼此密接,如圖12所示般,亦於其等之間形成某種程度之間隙。於圖12中,例如存在空隙α、β、γ、δ、ε、ζ。Figure 12 does not match the main part of the vaporizer of the present invention. The difference between the aspect shown in FIG. 12 and the aspect shown in FIG. 11 is the cross-sectional shape of the first flow path. That is, the cross section of the first flow path in the aspect shown in FIG. 11 is circular, but the cross section of the first flow path in the aspect shown in FIG. 12 is rectangular. Otherwise, similar to the configuration shown in FIG. 11, the tubular first flow path and the second flow path are combined in a lattice shape and fixed at their joints, and the first flow paths are also equal to each other. The contact point is fixed. In the case of such a structure, there is a tendency for the voids to be reduced compared with the aspect shown in FIG. 11. However, even if the tubes are brought into close contact with each other, as shown in FIG. 12, a certain gap is formed between them. In FIG. 12, there are voids α, β, γ, δ, ε, and ζ, for example.

於圖12所示之態樣中,第1流路之孔表示為Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl。又,於圖12中,第2流路表示為2a、2b、2c、2d。In the aspect shown in FIG. 12, the holes of the first flow path are represented as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl. In addition, in FIG. 12, the second flow paths are shown as 2a, 2b, 2c, and 2d.

於圖12中,例如存在於第1流路之孔Pf旁邊之其他第1流路之孔為孔Pa、Pb、Pc、Pe、Pg、Pi、Pj、Pk。 由圖11可知,於孔Pf與孔Pa之間存在空隙α及γ。又,於孔Pf與孔Pe之間存在空隙γ及ε。In FIG. 12, for example, the holes of the other first flow paths existing beside the hole Pf of the first flow path are the holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk. It can be seen from FIG. 11 that there are voids α and γ between the hole Pf and the hole Pa. In addition, there are gaps γ and ε between the hole Pf and the hole Pe.

圖12所示之箭頭概念性地表示熱之移動。若為如圖12所示之態樣,則自第2流路(2a、2b、2c、2d)內之熱介質向第1流路內之原料霧之傳熱僅於第2流路與第1流路之接點處進行。因此,傳熱效率較差。The arrow shown in FIG. 12 conceptually represents the movement of heat. If it is the state shown in Figure 12, the heat transfer from the heating medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is only between the second flow path and the first flow path. 1 Perform at the contact point of the flow path. Therefore, the heat transfer efficiency is poor.

如例示圖8~12所說明般,本發明之氣化器中,由於在主部之內部於1個第1流路、與存在於其旁邊之其他第1流路之間不存在除第2流路以外之空隙,故而高效率地進行自第2流路內之熱介質向第1流路內之原料霧之傳熱。As illustrated in FIGS. 8 to 12, in the vaporizer of the present invention, there is no second flow path between the first flow path and the other first flow paths existing beside it in the main part. The gap outside the flow path allows efficient heat transfer from the heat medium in the second flow path to the raw material mist in the first flow path.

本發明之氣化器之主部內部所存在之第1流路之剖面之等面積圓等效直徑(直徑)為5 mm以下,較佳為2 mm以下。又,較佳為1 mm以上。 此處,本發明中之等面積圓等效直徑意指相當於第1流路之剖面圖形之面積的真圓之直徑。再者,關於第2流路之等面積圓等效直徑亦相同。 若第1流路之剖面之大小為上述範圍,則就壓力損失與傳熱性能之平衡、析出物之不易堵塞性之方面而言較佳。 再者,第1流路之剖面之形狀並無特別限定。可為圓形、橢圓形、矩形等。The equal-area circle equivalent diameter (diameter) of the cross-section of the first flow path existing inside the main part of the vaporizer of the present invention is 5 mm or less, preferably 2 mm or less. Moreover, it is preferably 1 mm or more. Here, the equivalent diameter of a circle of equal area in the present invention means the diameter of a true circle corresponding to the area of the cross-sectional pattern of the first flow path. In addition, the equivalent diameter of the equal-area circle of the second flow path is also the same. If the size of the cross section of the first flow path is in the above range, it is preferable in terms of the balance between pressure loss and heat transfer performance, and the resistance to clogging of precipitates. In addition, the cross-sectional shape of the first flow path is not particularly limited. Can be round, oval, rectangular, etc.

本發明之氣化器之主部內部所存在之第2流路之剖面之等面積圓等效直徑(直徑)為2 mm以下,較佳為1 mm以下。又,較佳為0.5 mm以上。 若第2流路之剖面之大小為上述範圍,則就壓力損失與傳熱性能之平衡之方面而言較佳。 再者,第2流路之剖面之形狀並無特別限定。可為圓形、橢圓形、矩形等。The equal-area circle equivalent diameter (diameter) of the cross-section of the second flow path existing inside the main part of the vaporizer of the present invention is 2 mm or less, preferably 1 mm or less. Moreover, it is preferably 0.5 mm or more. If the size of the cross section of the second flow path is within the above range, it is preferable in terms of the balance between pressure loss and heat transfer performance. In addition, the cross-sectional shape of the second flow path is not particularly limited. Can be round, oval, rectangular, etc.

本發明之氣化器較佳為如下態樣:於相對於上述原料霧流動之方向垂直之方向上之上述主部之剖面中,於將上述熱介質一面蛇行一面流通之方向設為左右方向之情形時,上述第1流路之孔於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置,於在上下方向相鄰之行狀之孔之層之間存在上述第2流路,上述第2流路與上述第1流路並不連接,上述第2流路以避開自上下方向夾持之行狀之孔之層中之上述第1流路之孔之方式於上下方向蛇行。The vaporizer of the present invention preferably has the following aspect: in the cross section of the main part in the direction perpendicular to the direction in which the raw material mist flows, the direction in which the heating medium flows while meandering is set to the left and right direction In this case, the holes of the first flow path are arranged in rows in the left and right direction, and the rows of holes are arranged to form layers in the vertical direction, and the second flow exists between the layers of adjacent rows of holes in the vertical direction. The second flow path is not connected to the first flow path, and the second flow path is in the vertical direction to avoid the holes of the first flow path in the layer of rows of holes sandwiched from the vertical direction Snaking.

作為相當於此種較佳之態樣之本發明之氣化器,以下示出態樣1、態樣2、態樣3。As the vaporizer of the present invention corresponding to this preferred aspect, aspect 1, aspect 2, and aspect 3 are shown below.

關於態樣1,使用圖13~圖15進行說明。 圖13係表示本發明之氣化器中之主部之較佳態樣(態樣1)之概略立體圖,圖14表示圖13中之C-C'線剖視圖。 於圖13所示之態樣1之主部20中,如圖13所示,於與第1流路21直行之平面上形成有第2流路22,第2流路22以避開第1流路之方式蛇行。 再者,於圖13、圖14中,「21p」表示第1流路之入口或出口之孔或剖面中出現之第1流路之孔,「22p」表示第2流路之入口或出口之孔。Regarding aspect 1, description will be given using FIGS. 13 to 15. FIG. 13 is a schematic perspective view showing a preferred aspect (aspect 1) of the main part of the vaporizer of the present invention, and FIG. 14 is a cross-sectional view taken along line CC' in FIG. 13. In the main part 20 of the aspect 1 shown in FIG. 13, as shown in FIG. 13, a second flow path 22 is formed on a plane that runs straight with the first flow path 21, and the second flow path 22 is formed to avoid the first flow path. The way of the flow path snakes. Furthermore, in Figures 13 and 14, "21p" represents the hole at the entrance or exit of the first channel or the hole of the first channel appearing in the cross section, and "22p" represents the hole at the entrance or exit of the second channel. hole.

作為使用圖13~圖15進行說明之較佳態樣(態樣1)之主部20可獲得滿足下述[必要條件1]~[必要條件3]之剖面A。The main portion 20, which is a preferred aspect (aspect 1) explained using FIGS. 13 to 15, can obtain a cross-section A that satisfies the following [Requirement 1] to [Requirement 3].

[必要條件1] 如圖13、圖14所例示般之主部20係藉由將主部20於相對於原料霧流動之方向(於第1流路於鉛直方向呈直線狀延伸之情形時為該方向)垂直之方向切斷,可獲得如圖14所例示般之剖面A。 再者,剖面A亦可並非相對於主部20中之所有第1流路垂直之方向之剖面。根據第1流路之構成,亦可能存在無法獲得相對於所有第1流路成直角之剖面的情況。於此種情形時,將相對於主部20中之第1流路之一部分(相對於主部20中之儘可能多之第1流路)垂直之方向之剖面設為主部20中之剖面A。[Required Condition 1] The main part 20 as illustrated in Figure 13 and Figure 14 is vertical by the main part 20 relative to the direction in which the raw material mist flows (in the case where the first flow path extends linearly in the vertical direction) Cut in the direction to obtain a section A as illustrated in FIG. 14. Furthermore, the cross-section A may not be a cross-section in a direction perpendicular to all the first flow paths in the main portion 20. Depending on the configuration of the first flow path, there may be cases where it is impossible to obtain a cross section at right angles to all the first flow paths. In this case, set a section in a direction perpendicular to a part of the first flow path in the main part 20 (relative to as many first flow paths in the main part 20 as possible) as the cross section in the main part 20 A.

例如若為圖13所示之主部20之情形,則由於第1流路21直線地形成,故而相對於該流路垂直之方向之剖面、即圖13中之C-C'線剖面成為剖面A,若將其圖示則如圖14般。For example, in the case of the main portion 20 shown in FIG. 13, since the first flow path 21 is formed linearly, the cross section in the direction perpendicular to the flow path, that is, the cross section along the line C-C' in FIG. A, if it is shown, it looks like Figure 14.

再者,圖13、圖14中之第1流路及第2流路係為了容易理解而圖示出極其簡單之構成之流路。例如第2流路可於左右方向之端部與另一第2流路連接。In addition, the first flow path and the second flow path in FIG. 13 and FIG. 14 are flow paths having extremely simple structures for easy understanding. For example, the second flow path may be connected to another second flow path at the end in the left-right direction.

[必要條件2] 關於必要條件2,使用圖15進行說明。圖15表示與圖14相同之剖面A。又,於圖14中將第1流路之孔表示為「21p」,但於圖15中表示為「Pmk 」(m及k設為1以上之整數)。 於主部20中,如圖15所例示般,於將剖面A中熱介質一面蛇行一面流通之方向設為左右方向之情形時,第1流路之孔(Pmk )於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置。於圖15中,孔(Pmk )於左右方向呈行狀排列,行狀之孔於上下方向存在3層孔之層。並且,將該等行狀之孔之層自下方朝上方設為第1層、第2層及第3層,將第1層之孔設為「P1k 」,將第2層之孔設為「P2k 」,將第3層之孔設為「P3k 」。亦即,將m設為層之編號。又,於各層中孔自左向右設為「Pm1 」、「Pm2 」、「Pm3 」…「Pmk 」。亦即,k設為同一層內之孔之編號(連號)。此處,設為於存在於第1層之「P1k 」之孔之正上方,存在第3層之「P3k 」之孔。例如,於存在於第1層之「P13 」之孔之正上方,存在第3層之「P33 」之孔。又,設為於存在於第1層之「P1k 」之孔之左上方,存在第2層之「P2k 」之孔。例如,於存在於第1層之「P13 」之孔之左上方,存在第2層之「P23 」之孔。[Requirement 2] The requirement 2 will be described using FIG. 15. FIG. 15 shows the same section A as in FIG. 14. In addition, in FIG. 14, the hole of the first flow path is indicated as "21p", but in FIG. 15 it is indicated as "P mk " (m and k are set to integers of 1 or more). In the main part 20, as illustrated in FIG. 15, when the direction in which the heating medium flows while meandering in the section A is set to the left and right direction, the holes (P mk ) of the first flow path are arranged in a row in the left and right direction. , And row-shaped holes are arranged in a way that forms layers in the up and down direction. In Fig. 15, the holes (P mk ) are arranged in rows in the left and right direction, and there are three layers of holes in the row of holes in the vertical direction. Also, set the layers of the rows of holes from below to the first, second, and third layers, set the holes in the first layer to "P 1k ", and set the holes in the second layer to " P 2k ", set the hole of the third layer to "P 3k ". That is, let m be the number of the layer. In addition, the holes in each layer are set to "P m1 ", "P m2 ", "P m3 "... "P mk "from left to right. That is, k is the number (serial number) of the holes in the same layer. Here, it is assumed that the hole of "P 1k "on the first layer is directly above the hole of "P 3k " on the third layer. For example, directly above the hole "P 13 "on the first layer, there is a hole "P 33 " on the third layer. In addition, it is assumed that there is a hole in the second layer "P 2k " at the upper left of the hole in the first layer "P 1k ". For example, at the upper left of the hole "P 13 "in the first layer, there is a hole "P 23 " in the second layer.

於此種情形時,於上下方向相鄰之行狀之孔之層成為第1層與第2層、及第2層與第3層,但於相鄰之第1層與第2層中,第1流路之孔於左右方向上並未配置於相同位置。即,於第1層之孔之中心之正上方不存在第2層之孔之中心。第2層之孔存在於第1層中之2個孔之間。同樣地,於相鄰之第2層與第3層中,第2流路之孔於左右方向上並未配置於相同位置。即,於第2層之孔之中心之正上方不存在第3層之孔之中心。第3層之孔存在於第2層中之2個孔之間。In this case, the layers of rows of holes adjacent in the vertical direction become the first layer and the second layer, and the second and third layers. However, in the adjacent first and second layers, the 1 The holes of the flow path are not arranged at the same position in the left-right direction. That is, there is no center of the hole of the second layer directly above the center of the hole of the first layer. The hole in the second layer exists between the two holes in the first layer. Similarly, in the adjacent second layer and third layer, the holes of the second flow path are not arranged at the same position in the left-right direction. That is, there is no center of the hole of the third layer directly above the center of the hole of the second layer. The hole in the third layer exists between the two holes in the second layer.

[必要條件3] 於主部20中,如圖14及圖15所示,於上下方向相鄰之行狀之孔之層之間存在第2流路22。 又,第1流路21與第2流路22並不連接。 並且,第2流路22以避開自上下方向夾持之行狀之孔之層中之第1流路之孔(21p、Pmk )之方式於上下方向蛇行。 例如於圖15中,於包含第1流路之孔(P11 、P12 、P13 、P14 )之第1層、與包含第2流路之孔(P21 、P22 、P23 、P24 、P25 )之第2層之間存在第2流路22,該第2流路以避開第1層之孔(P11 、P12 、P13 、P14 )及第2層之孔(P21 、P22 、P23 、P24 、P25 )之方式於上下方向蛇行。 此處,如圖15所示,成為第1層與第2層之交界之帶狀部分上下蛇行,第2流路沿著該帶狀部分之形狀蛇行。[Required Condition 3] In the main portion 20, as shown in FIGS. 14 and 15, there is a second flow path 22 between the layers of adjacent rows of holes in the vertical direction. In addition, the first flow path 21 and the second flow path 22 are not connected. In addition, the second flow path 22 snakes in the vertical direction so as to avoid the holes (21p, P mk ) of the first flow path in the layer of row-shaped holes sandwiched from the vertical direction. For example, in Figure 15, in the first layer containing the holes (P 11 , P 12 , P 13 , P 14 ) of the first flow path, and the holes (P 21 , P 22 , P 23 , There is a second flow path 22 between the second layer of P 24 , P 25 ), and the second flow path avoids the holes (P 11 , P 12 , P 13 , P 14 ) of the first layer and the second layer The way of holes (P 21 , P 22 , P 23 , P 24 , P 25 ) snakes in the up and down direction. Here, as shown in FIG. 15, the belt-shaped part that becomes the boundary between the first layer and the second layer snakes up and down, and the second flow path snakes along the shape of the belt-shaped part.

關於態樣2,使用圖16進行說明。 圖16係與表示態樣1之剖面之圖14相同之剖面。 本發明之氣化器係如下之態樣:於相對於原料霧流動之方向垂直之方向上之主部20之剖面A中,於將熱介質一面蛇行一面流通之方向設為左右方向之情形時,第1流路之孔21p於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置,此外,於對比於上下方向相鄰之行狀之孔之層時,第1流路之孔21p於左右方向上並未配置於相同位置,第2流路22與第1流路21並不連接,第2流路22以避開自上下方向夾持之行狀之孔之層中之第1流路之孔21p之方式於上下方向蛇行。Regarding aspect 2, FIG. 16 is used for description. FIG. 16 is the same cross-section as FIG. 14 showing the cross-section of aspect 1. The vaporizer of the present invention has the following aspect: in the cross section A of the main part 20 in the direction perpendicular to the direction of the flow of the raw material mist, when the direction of the heat medium meandering and flowing is the left and right direction , The holes 21p of the first flow path are arranged in rows in the left-right direction, and the row-shaped holes are arranged to form a layer in the vertical direction. In addition, when compared with the layer of adjacent row-shaped holes in the vertical direction, the first flow path The holes 21p are not arranged at the same position in the left and right directions. The second flow path 22 is not connected to the first flow path 21. The second flow path 22 avoids the rows of holes sandwiched from the vertical direction. The hole 21p of the first flow path snakes in the vertical direction.

關於態樣3,使用圖17進行說明。 圖17係與表示態樣1之剖面之圖14相同之剖面。 本發明之氣化器係如下之態樣:於相對於原料霧流動之方向垂直之方向上之主部20之剖面A中,於將熱介質一面蛇行一面流通之方向設為左右方向之情形時,第1流路之孔21p於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置,第2流路22與第1流路21並不連接,第2流路22以避開自上下方向夾持之行狀之孔之層中之第1流路之孔21p之方式於上下方向蛇行。Regarding aspect 3, description will be given using FIG. 17. FIG. 17 is the same cross-section as FIG. 14 showing the cross-section of aspect 1. The vaporizer of the present invention has the following aspect: in the cross section A of the main part 20 in the direction perpendicular to the direction of the flow of the raw material mist, when the direction of the heat medium meandering and flowing is the left and right direction , The holes 21p of the first flow path are arranged in rows in the left and right direction, and the rows of holes are arranged to form layers in the vertical direction. The second flow path 22 and the first flow path 21 are not connected, and the second flow path 22 is Avoiding the hole 21p of the first flow path in the layer of rows of holes sandwiched from the up and down direction snakes in the up and down direction.

本發明之氣化器於將上述第1流路於其長度方向上分為複數個部位之情形時,較佳為以可針對該等部位之每一個調整存在於上述第1流路內部之上述原料霧之溫度之方式構成。 其原因在於:若以此種方式製造成膜用氣體原料,則析出物之產生量變得更少。When the vaporizer of the present invention divides the first flow path into a plurality of parts in the longitudinal direction, it is preferable that the above-mentioned existing inside the first flow path can be adjusted for each of these parts. The method of forming the temperature of the raw material mist. The reason is that if the gas raw material for film formation is manufactured in this way, the amount of precipitates generated becomes smaller.

其次,對此種較佳之態樣進行說明。 例如於圖4中,將主部12中之形成有供原料霧流入之孔1Pin之面設為入側面125。又,將主部12中之形成有供排出氣體原料之孔1Pout之面設為出側面127。 於此情形時,若分開構成向主部12中之靠近入側面125之部位內之第2流路流入熱介質之路徑、及向主部12中之靠近出側面127之部位內之第2流路流入熱介質之路徑,則可使前者之向主部12中之靠近入側面125之部位內之第2流路流通的熱介質之溫度、與後者之向主部12中之靠近出側面127之部位內之第2流路流通的熱介質之溫度不同。於此情形時,可針對每個部位調整前者之主部12中之靠近入側面125之部位內之第1流路1之內部所存在之原料霧之溫度、及後者之主部12中之靠近出側面127之部位內之第1流路1之內部所存在之原料霧之溫度。 又,例如,若分開構成向主部12中之靠近入側面125之部位內之第2流路流入熱介質之路徑、及向主部12中之靠近出側面127之部位內之第2流路流入熱介質之路徑,且使溫度相對較高之熱介質流通至前者之向主部12中之靠近入側面125之部位內之第2流路流入熱介質之路徑,使溫度相對較低之熱介質流通至後者之向主部12中之靠近出側面127之部位內之第2流路流入熱介質之路徑,則可自入側面125朝向出側面127,使存在於其內部之第2流路內之上述熱介質之溫度逐漸降低。於此情形時,自孔1Pin流入至第1流路內之原料霧於朝向孔1Pout移動之過程中,溫度逐漸降低。Secondly, this better aspect will be explained. For example, in FIG. 4, the surface of the main portion 12 on which the hole 1Pin for the inflow of the raw material mist is formed is the entrance side 125. In addition, the surface of the main portion 12 on which the hole 1Pout for discharging the gas raw material is formed is the exit side surface 127. In this case, if the second flow path in the main part 12 near the entrance side 125 is formed separately, the heat medium flow path and the second flow in the main part 12 near the exit side 127 The path through which the heat medium flows into the main part 12 can make the temperature of the heat medium flowing into the second flow path in the main part 12 near the inlet side 125 and the latter to the outlet side 127 of the main part 12 The temperature of the heating medium flowing in the second flow path in the part is different. In this case, the temperature of the raw material mist existing in the first flow path 1 in the part near the entrance side 125 in the main part 12 of the former can be adjusted for each part, and the proximity of the main part 12 in the latter The temperature of the raw material mist existing in the first flow path 1 in the part exiting the side surface 127. Also, for example, if the second flow path in the main part 12 near the entrance side 125 is formed separately, the heat medium flow path and the second flow path in the main part 12 near the exit side 127 are formed. The path for the inflow of the heat medium, and the heat medium with a relatively high temperature is circulated to the second flow path of the main part 12 near the entrance side 125 of the former, and the path for the heat medium to flow into the heat medium with a relatively low temperature The medium flows to the second flow path in the main part 12 near the exit side surface 127 to flow into the heat medium. Then, it can flow from the entrance side surface 125 to the exit side surface 127, so that the second flow path existing inside The temperature of the above-mentioned heat medium inside gradually decreases. In this case, the temperature of the raw material mist flowing into the first flow path from the hole 1Pin gradually decreases as it moves toward the hole 1Pout.

又,例如於圖6、圖7所示之主部可分離地構成之態樣中,若以可分別對在主部12a、主部12b、主部12c之內部之第2流路內流動之熱介質之溫度進行調整之方式構成,則可針對主部12a、主部12b、主部12c之各部位中之每一個,調整存在於其等內部之原料霧之溫度。例如,若自入側面125朝向出側面127,使存在於其內部之第2流路內之上述熱介質之溫度逐漸降低,則自孔1Pin流入至第1流路內之原料霧於朝向孔1Pout移動之過程中,溫度逐漸降低。Also, for example, in the detachable configuration of the main part shown in Figs. 6 and 7, if the main part 12a, the main part 12b, and the main part 12c flow in the second flow path respectively, The method of adjusting the temperature of the heating medium can adjust the temperature of the raw material mist existing in each of the main portion 12a, main portion 12b, and main portion 12c. For example, if the temperature of the heating medium in the second flow path is gradually reduced from the inlet side 125 to the outlet side 127, the mist of the raw material flowing into the first flow path from the hole 1Pin will be directed toward the hole 1Pout During the movement, the temperature gradually decreases.

本發明之氣化器於將上述主部中之形成有供上述原料霧流入之孔之面設為入側面,將上述主部中之形成有供排出上述氣體原料之孔之面設為出側面之情形時,較佳為自上述入側面朝向上述出側面,存在於其內部之上述第1流路之等面積圓等效直徑逐漸變化。In the gasifier of the present invention, the surface of the main part formed with the holes for the inflow of the raw material mist is set as the inlet side, and the surface of the main part formed with the holes for discharging the gas raw material is set as the outlet side In this case, it is preferable that the equal-area circle-equivalent diameter of the first flow path existing in the entrance side face toward the exit side face gradually changes.

關於該較佳之態樣,使用圖18~圖21進行說明。 圖18表示圖4中之D-D'線剖視圖,圖19~圖21表示將圖18所示之第1流路置換為另一態樣(較佳態樣)之情形時之剖視圖。About this preferable aspect, it demonstrates using FIG. 18-21. Fig. 18 shows a cross-sectional view taken along the line D-D' in Fig. 4, and Figs. 19-21 show cross-sectional views when the first flow path shown in Fig. 18 is replaced with another aspect (preferred aspect).

於圖18所示之主部12中,自形成有供原料霧流入之孔1Pin之入側面125朝向形成有供排出氣體原料之孔1Pout之出側面127,存在於其內部之第1流路1之直徑未發生變化。第1流路1直線地形成。In the main portion 12 shown in FIG. 18, from the inlet side 125 where the hole 1Pin for the inflow of the raw material mist is formed toward the outlet side 127 where the hole 1Pout for the discharge of the gas raw material is formed, the first flow path 1 exists in the inside thereof The diameter has not changed. The first flow path 1 is formed linearly.

相對於此,於圖19所示之主部12中,自形成有供原料霧流入之孔1Pin之入側面125朝向形成有供排出氣體原料之孔1Pout之出側面127,存在於其內部之上述第1流路之等面積圓等效直徑以逐漸變小之方式發生變化。若為此種態樣,則就可使氣體原料之溫度緩慢上升之方面而言較佳。On the other hand, in the main portion 12 shown in FIG. 19, from the inlet side 125 formed with the hole 1Pin for the inflow of the raw material mist toward the outlet side 127 formed with the hole 1Pout for discharging the gas raw material, the above-mentioned inside is present The equivalent diameter of the equal-area circle of the first flow path gradually decreases. If it is in this state, it is preferable in terms of allowing the temperature of the gas raw material to rise slowly.

又,於圖20所示之主部12中,自形成有供原料霧流入之孔1Pin之入側面125朝向形成有供排出氣體原料之孔1Pout之出側面127,存在於其內部之上述第1流路之等面積圓等效直徑以逐漸變大之方式發生變化。若為此種態樣,則就可將氣體原料於第1流路上均等地分配之方面而言較佳。In addition, in the main portion 12 shown in FIG. 20, from the inlet side 125 formed with the hole 1Pin for the inflow of the raw material mist toward the outlet side 127 formed with the hole 1Pout for discharging the gas raw material, the above-mentioned first The equivalent diameter of the equal area circle of the flow path changes gradually. In this aspect, it is preferable in that the gas raw material can be evenly distributed on the first flow path.

又,於圖21所示之主部12中,自形成有供原料霧流入之孔1Pin之入側面125朝向形成有供排出氣體原料之孔1Pout之出側面127,存在於其內部之上述第1流路之等面積圓等效直徑以於逐漸變小之後變大之方式發生變化。若為此種態樣,則就利用氣體原料之混亂促進傳熱、及流體之均一化之方面而言較佳。In addition, in the main portion 12 shown in FIG. 21, from the inlet side 125 formed with the hole 1Pin for the inflow of the raw material mist toward the outlet side 127 formed with the hole 1Pout for discharging the gas raw material, the above-mentioned first The equivalent diameter of the equal-area circle of the flow path changes in a way that gradually becomes smaller and then becomes larger. If it is in this aspect, it is preferable in terms of utilizing the chaos of the gaseous material to promote heat transfer and homogenization of the fluid.

[排出部] 圖22係排出部16之概略立體圖,圖23係圖22中之E-E'線剖視圖。 圖22所例示之排出部16收集自如上所述之主部12排出之氣體原料,並將其向系統外排出。 於圖22、圖23所例示之態樣之情形時,自主部12排出之氣體原料彙集於凹處162。並且,通過與其連接之路徑164,氣體原料被排出至系統外。 排出部16較佳為與主部12同樣地包含金屬材料。 再者,本發明之氣化器較佳為具備排出部。[Discharge part] FIG. 22 is a schematic perspective view of the discharge part 16, and FIG. 23 is a cross-sectional view taken along the line E-E' in FIG. The discharge part 16 illustrated in FIG. 22 collects the gas raw material discharged from the main part 12 as described above, and discharges it to the outside of the system. In the situation illustrated in FIGS. 22 and 23, the gas raw materials discharged from the main body 12 are collected in the recess 162. In addition, the gaseous material is discharged to the outside of the system through the path 164 connected thereto. The discharge part 16 preferably contains a metal material like the main part 12. Furthermore, the vaporizer of the present invention preferably includes a discharge part.

本發明之氣化器較佳為構成為於上述主部之外表面、與上述第1流路及上述第2流路之至少一部分之間具有空隙,使內部之熱難以向外部釋出。藉由將該空隙內設為真空,而使內部之熱難以向外部釋出。 再者,本發明之氣化器亦可進而構成為於上述主部以外之部分之外表面、與上述第1流路及上述第2流路之至少一部分之間具有空隙,而使內部之熱難以向外部釋出。 關於此種較佳態樣,使用圖24~圖27進行說明。The vaporizer of the present invention is preferably configured to have a gap between the outer surface of the main part and at least a part of the first flow path and the second flow path, so that the internal heat is difficult to release to the outside. By setting the void into a vacuum, the internal heat is difficult to release to the outside. Furthermore, the vaporizer of the present invention may be further configured to have a gap between the outer surface of a part other than the main part and at least a part of the first flow path and the second flow path, so that the internal heat It is difficult to release to the outside world. This preferred aspect will be described using FIGS. 24-27.

圖24係如下態樣:將圖1所示之態樣中之主部12更換為圖6所示之主部(12a、9a、12b、9b、12c),具有用以向第2流路72導入熱介質之導入孔61、及自第2流路72排出熱介質之排出孔63,進而於外表面65、與第1流路71及第2流路72之至少一部分之間具有空隙67。 並且,圖25係圖24中之F-F'線剖視圖,圖26係圖24中之G-G'線剖視圖,圖27係圖24中之H-H'線剖視圖。Fig. 24 is the following aspect: the main part 12 in the aspect shown in Fig. 1 is replaced with the main part (12a, 9a, 12b, 9b, 12c) shown in Fig. 6, with a second flow path 72 The introduction hole 61 for introducing the heat medium and the discharge hole 63 for discharging the heat medium from the second flow path 72 further have a gap 67 between the outer surface 65 and at least a part of the first flow path 71 and the second flow path 72. 25 is a cross-sectional view taken along line F-F' in FIG. 24, FIG. 26 is a cross-sectional view taken along line G-G' in FIG. 24, and FIG. 27 is a cross-sectional view taken along line H-H' in FIG. 24.

於圖24~圖27所示之本發明之氣化器之較佳態樣中,於外表面65、與第1流路71及第2流路72之至少一部分之間形成有空隙67。 於圖24~圖27所示之較佳態樣之情形時,空隙67原則上沿著外表面以一定之厚度形成。但是,關於形成有熱介質之導入孔61及熱介質之排出孔63、以及供導入原料霧之導入孔及供排出氣體原料之排出孔之部分,如圖24~圖27所示,亦可不形成空隙67。In the preferred embodiment of the vaporizer of the present invention shown in FIGS. 24 to 27, a gap 67 is formed between the outer surface 65 and at least a part of the first flow path 71 and the second flow path 72. In the case of the preferred aspect shown in FIGS. 24 to 27, the void 67 is formed with a certain thickness along the outer surface in principle. However, the part where the heat medium introduction hole 61 and the heat medium discharge hole 63, the introduction hole for introducing the raw material mist and the discharge hole for discharging the gas material are formed, may not be formed as shown in FIGS. 24-27. Gap 67.

空隙之厚度並無特別限定,較佳為0.5~2.0 mm左右。The thickness of the void is not particularly limited, but is preferably about 0.5 to 2.0 mm.

空隙例如可利用與第1流路相同之方法形成。關於第1流路之形成方法,將於下文進行敍述。The void can be formed by the same method as the first flow path, for example. The method of forming the first flow path will be described below.

本發明之氣化器藉由具有此種空隙,從而內部之熱難以向外部釋出,故而較佳。 再者,亦可將此種空隙內設為真空。若利用下述本發明之製造方法製造本發明之氣化器,則可容易地將空隙內設為真空。亦可利用保溫材填滿空隙內,但將空隙內設為真空之情形時之隔熱性更優異。The vaporizer of the present invention has such a gap, so that the internal heat is difficult to release to the outside, which is preferable. Furthermore, it is also possible to make the inside of such a space a vacuum. If the vaporizer of the present invention is manufactured by the following manufacturing method of the present invention, the inside of the void can be easily vacuumed. It is also possible to fill the void with a thermal insulation material, but when the void is set to a vacuum, the thermal insulation is more excellent.

<本發明之製造方法> 對本發明之製造方法進行說明。 如上所述之本發明之氣化器較佳為利用以下所示之本發明之製造方法進行製造。<The manufacturing method of the present invention> The manufacturing method of the present invention will be described. The vaporizer of the present invention as described above is preferably manufactured by the manufacturing method of the present invention shown below.

使用圖28~圖30進行說明。 於本發明之製造方法中,首先如圖28(a)所示,準備複數片金屬製板材30。 然後,如圖28(b)所示,於其主面32之上形成成為第2流路之一部分之溝槽34。Description will be given using FIGS. 28 to 30. In the manufacturing method of the present invention, first, as shown in FIG. 28(a), a plurality of metal plates 30 are prepared. Then, as shown in FIG. 28(b), a groove 34 that becomes a part of the second flow path is formed on the main surface 32 thereof.

形成此種溝槽34之方法並無特別限定。可利用蝕刻等化學方法形成,亦可利用雷射加工或切削等物理方法形成。The method of forming such trenches 34 is not particularly limited. It can be formed by chemical methods such as etching, or can be formed by physical methods such as laser processing or cutting.

其次,如圖28(c)所示,形成自其一主面32向另一主面38貫通之貫通孔40。例如,可使用鑽孔器形成貫通孔40。又,貫通孔40亦可利用蝕刻等化學方法、或者雷射加工或切削等物理方法而形成。 該貫通孔40成為第1流路之一部分。Next, as shown in FIG. 28(c), a through hole 40 penetrating from one main surface 32 to the other main surface 38 is formed. For example, a drill may be used to form the through hole 40. In addition, the through hole 40 may be formed by a chemical method such as etching, or a physical method such as laser processing or cutting. The through hole 40 becomes a part of the first flow path.

其次,使形成有溝槽34及貫通孔40之金屬製板材42之主面32彼此密接(圖29(a)、(b))。 然後,若藉由擴散接合將該等金屬製板材42之主面32彼此結合,則可獲得如圖29(c)所示之於內部具備第1流路52及第2流路54之主部之一部分50。 然後,若製作複數個如圖29(c)所示之主部之一部分50並藉由擴散結合將其等之主面彼此結合,則可獲得主部。Next, the main surfaces 32 of the metal plate material 42 on which the groove 34 and the through hole 40 are formed are brought into close contact with each other (FIG. 29(a), (b)). Then, if the main surfaces 32 of the metal plates 42 are joined to each other by diffusion bonding, the main part having the first flow path 52 and the second flow path 54 inside as shown in FIG. 29(c) can be obtained One part 50. Then, if a plurality of parts 50 of the main part as shown in FIG. 29(c) are made and their main surfaces are joined to each other by diffusion bonding, the main part can be obtained.

再者,於圖29中,對使於主面32之上形成有成為第2流路之一部分之溝槽34之2片金屬性板材42密接而結合之情形進行了說明,但亦可如圖30(a)所示般,使形成有溝槽34及貫通孔40之金屬製板材42、與未形成溝槽34而形成有貫通孔40之金屬性板材42'密接而結合。 然後,若藉由擴散接合將該等金屬製板材42、42'之主面32彼此結合,則可獲得如圖30(c)所示之於內部具備第1流路52及第2流路54之主部之一部分50。 然後,若製作複數個如圖30(c)所示之主部之一部分50並藉由擴散結合將其等之主面彼此結合,則可獲得主部。In addition, in FIG. 29, the case where the two metallic plates 42 formed on the main surface 32 with the groove 34 as a part of the second flow path are in close contact and joined together is described, but it may be as shown in the figure. As shown in 30(a), the metal plate 42 on which the groove 34 and the through hole 40 are formed, and the metal plate 42' on which the through hole 40 is formed without the groove 34 are in close contact and joined. Then, if the main surfaces 32 of the metal plates 42, 42' are joined to each other by diffusion bonding, it is possible to obtain the first flow path 52 and the second flow path 54 inside as shown in FIG. 30(c) A part of the main part 50. Then, if a plurality of parts 50 of the main part as shown in FIG. 30(c) are made and their main surfaces are joined to each other by diffusion bonding, the main part can be obtained.

1:第1流路 1Pin:第1流路之入口 1Pout:第1流路之出口 2:第2流路 2a:第2流路 2b:第2流路 2c:第2流路 2d:第2流路 9a:間隔件 9b:間隔件 10:本發明之氣化器 12:主部 12a:主部 12b:主部 12c:主部 14:供給部 16:排出部 20:主部 21:第1流路 21p:第1流路之孔 22:第2流路 22p:第2流路之孔 30:金屬製板材 32:主面 34:溝槽 36:金屬製板材 38:主面 40:貫通孔 42:金屬製板材 42':金屬製板材 50:主部(之一部分) 52:第1流路 54:第2流路 61:導入孔 63:排出孔 65:外表面 67:空隙 71:第1流路 72:第2流路 91:貫通孔 125:主部之入側面 127:主部之出側面 141:導入孔 143:流路 161:排出孔 162:凹處 164:路徑 A:剖面 Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl:第1流路之孔 P11、P12、P13……Pmk:第1流路之孔 α、β、γ、δ、ε、ζ:空隙1: The first flow path 1Pin: the inlet of the first flow path 1Pout: the outlet of the first flow path 2: the second flow path 2a: the second flow path 2b: the second flow path 2c: the second flow path 2d: the second Flow path 9a: spacer 9b: spacer 10: vaporizer of the present invention 12: main part 12a: main part 12b: main part 12c: main part 14: supply part 16: discharge part 20: main part 21: first Flow path 21p: First flow path hole 22: Second flow path 22p: Second flow path hole 30: Metal plate 32: Main surface 34: Groove 36: Metal plate 38: Main surface 40: Through hole 42: Metal sheet 42': Metal sheet 50: Main part (part of) 52: First flow path 54: Second flow path 61: Introductory hole 63: Discharge hole 65: Outer surface 67: Gap 71: First Flow path 72: Second flow path 91: Through hole 125: Inlet side of the main part 127: Outgoing side of the main part 141: Introductory hole 143: Flow path 161: Discharge hole 162: Recess 164: Path A: Section Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl: the holes of the first flow path P 11 , P 12 , P 13 ... P mk : the holes α, β of the first flow path , Γ, δ, ε, ζ: void

圖1係表示本發明之氣化器之一態樣之概略立體圖。 圖2係表示本發明之氣化器可具備之供給部之一態樣的概略立體圖。 圖3係圖2所示之態樣之A-A'線剖視圖。 圖4係表示本發明之氣化器可具備之主部之一態樣的概略立體圖。 圖5係圖4所示之態樣之B-B'線剖視圖。 圖6係表示本發明之氣化器可具備之主部之另一態樣的概略立體圖。 圖7係表示圖6所示之主部之分離狀態之概略立體圖。 圖8係表示本發明之氣化器之主部之剖面之一態樣的概略圖。 圖9係表示本發明之氣化器之主部之剖面之另一態樣的概略圖。 圖10係表示與本發明之氣化器不相當之主部之剖面之一態樣的概略圖。 圖11係表示與本發明之氣化器不相當之主部之剖面之另一態樣的概略圖。 圖12係表示與本發明之氣化器不相當之主部之剖面之又一態樣的概略圖。 圖13係表示本發明之氣化器可具備之主部之另一態樣的概略立體圖。 圖14係圖13所示之態樣之C-C'線剖視圖。 圖15係圖13所示之態樣之C-C'線剖視圖。 圖16係表示本發明之氣化器可具備之主部之另一態樣之剖面的概略圖。 圖17係表示本發明之氣化器可具備之主部之又一態樣之剖面的概略圖。 圖18係圖4所示之態樣之D-D'線剖視圖。 圖19係表示將圖18所示之態樣之第1流路置換為其他之態樣的概略剖視圖。 圖20係表示將圖18所示之態樣之第1流路置換為其他之另一態樣的概略剖視圖。 圖21係表示將圖18所示之態樣之第1流路置換為其他之又一態樣的概略剖視圖。 圖22係表示本發明之氣化器可具備之排出部之一態樣的概略立體圖。 圖23係圖22所示之態樣之E-E'線剖視圖。 圖24係表示本發明之氣化器之較佳態樣之概略立體圖。 圖25係圖24所示之態樣之F-F'線剖視圖。 圖26係圖24所示之態樣之G-G'線剖視圖。 圖27係圖24所示之態樣之H-H'線剖視圖。 圖28(a)~(c)係用以說明本發明之製造方法之概略立體圖。 圖29(a)~(c)係用以說明本發明之製造方法之後續之概略立體圖。 圖30(a)~(c)係用以說明另一本發明之製造方法之概略立體圖。Fig. 1 is a schematic perspective view showing one aspect of the vaporizer of the present invention. Fig. 2 is a schematic perspective view showing one aspect of a supply unit that the vaporizer of the present invention can have. FIG. 3 is a cross-sectional view taken along line AA' of the aspect shown in FIG. 2. FIG. Fig. 4 is a schematic perspective view showing one aspect of the main part that the vaporizer of the present invention can have. FIG. 5 is a cross-sectional view taken along line BB' of the aspect shown in FIG. 4. FIG. Fig. 6 is a schematic perspective view showing another aspect of the main part that the vaporizer of the present invention can have. Fig. 7 is a schematic perspective view showing the separated state of the main part shown in Fig. 6; Fig. 8 is a schematic view showing one aspect of a cross section of the main part of the vaporizer of the present invention. Fig. 9 is a schematic diagram showing another aspect of the cross section of the main part of the vaporizer of the present invention. Fig. 10 is a schematic view showing a cross-sectional aspect of the main part which is not equivalent to the vaporizer of the present invention. Fig. 11 is a schematic diagram showing another aspect of the cross-section of the main part which is not equivalent to the vaporizer of the present invention. Fig. 12 is a schematic view showing another aspect of the cross section of the main part which is not equivalent to the vaporizer of the present invention. Fig. 13 is a schematic perspective view showing another aspect of the main part that the vaporizer of the present invention can have. Fig. 14 is a cross-sectional view taken along line CC' of the aspect shown in Fig. 13. Fig. 15 is a cross-sectional view taken along line CC' of the aspect shown in Fig. 13. Fig. 16 is a schematic view showing a cross-section of another aspect of the main part that the vaporizer of the present invention can have. Fig. 17 is a schematic view showing a cross-section of another aspect of the main part that can be provided in the vaporizer of the present invention. Fig. 18 is a cross-sectional view taken along the line D-D' of the aspect shown in Fig. 4. Fig. 19 is a schematic cross-sectional view showing the aspect shown in Fig. 18 replaced with another aspect of the first flow path. FIG. 20 is a schematic cross-sectional view showing another aspect in which the first flow path of the aspect shown in FIG. 18 is replaced with another aspect. FIG. 21 is a schematic cross-sectional view showing another aspect in which the first flow path of the aspect shown in FIG. 18 is replaced with another aspect. Fig. 22 is a schematic perspective view showing one aspect of a discharge portion that can be provided in the vaporizer of the present invention. FIG. 23 is a cross-sectional view taken along line E-E' of the aspect shown in FIG. 22. FIG. Fig. 24 is a schematic perspective view showing a preferred aspect of the vaporizer of the present invention. Fig. 25 is a cross-sectional view taken along line FF' of the aspect shown in Fig. 24. Fig. 26 is a cross-sectional view taken along the line G-G' of the aspect shown in Fig. 24; Fig. 27 is a cross-sectional view taken along line H-H' of the aspect shown in Fig. 24. Fig. 28 (a)-(c) are schematic perspective views for explaining the manufacturing method of the present invention. Figures 29 (a) to (c) are schematic perspective views for explaining the subsequent steps of the manufacturing method of the present invention. 30(a)-(c) are schematic perspective views for explaining another manufacturing method of the present invention.

1:第1流路 1: The first flow path

1Pin:第1流路之入口 1Pin: the entrance of the first flow path

2:第2流路 2: Second flow path

10:本發明之氣化器 10: The vaporizer of the present invention

12:主部 12: Main part

14:供給部 14: Supply Department

16:排出部 16: discharge part

127:主部之出側面 127: The side of the main part

141:導入孔 141: Lead-in hole

161:排出孔 161: discharge hole

Claims (7)

一種獲得成膜用氣體原料之氣化器,其係藉由對原料霧進行加熱使其氣化而獲得成膜用氣體原料者,且 於包含金屬材料之主部之內部具有供上述原料霧流通之第1流路及供對上述原料霧進行加熱之熱介質流通之第2流路, 上述第1流路之剖面之等面積圓等效直徑為5 mm以下,上述第2流路之剖面之等面積圓等效直徑為2 mm以下, 於上述主部之內部,在1個第1流路、與存在於其旁邊之其他第1流路之間,不存在除第2流路以外之空隙。A vaporizer for obtaining gas raw materials for film formation, which is obtained by heating and vaporizing raw material mist to obtain gas raw materials for film formation, and Inside the main part containing the metal material, there are a first flow path through which the above-mentioned raw material mist flows and a second flow path through which a heat medium for heating the above-mentioned raw material mist flows, The equivalent circle equivalent diameter of the cross section of the first flow path is 5 mm or less, and the equivalent circle equivalent diameter of the cross section of the second flow path is 2 mm or less, In the inside of the main part, there is no gap other than the second flow path between the first flow path and the other first flow paths existing beside it. 如請求項1之獲得成膜用氣體原料之氣化器,其中 於相對於上述原料霧流動之方向垂直之方向上之上述主部之剖面中, 於將上述熱介質一面蛇行一面流通之方向設為左右方向之情形時,上述第1流路之孔於左右方向呈行狀排列,且行狀之孔以於上下方向構成層之方式配置, 於在上下方向相鄰之行狀之孔之層之間存在上述第2流路,上述第2流路與上述第1流路並不連接,上述第2流路以避開自上下方向夾持之行狀之孔之層中之上述第1流路之孔之方式於上下方向蛇行。Such as the gasifier for obtaining gas raw materials for film formation in claim 1, where In the cross section of the main part in a direction perpendicular to the direction in which the raw material mist flows, When the direction in which the heating medium flows while meandering is left and right, the holes of the first flow path are arranged in a row in the left and right direction, and the rows of holes are arranged to form a layer in the vertical direction, The second flow path exists between the layers of rows of holes that are adjacent in the vertical direction, and the second flow path is not connected to the first flow path. The holes of the first flow path in the layer of rows of holes meander in the up and down direction. 如請求項1或2之獲得成膜用氣體原料之氣化器,其於將上述第1流路於其長度方向上分為複數個部位之情形時,以可針對該等部位之每一個調整存在於上述第1流路內部之上述原料霧之溫度之方式構成。For example, the vaporizer for obtaining the gas raw material for film formation in claim 1 or 2, when the first flow path is divided into a plurality of parts in the longitudinal direction, it can be adjusted for each of these parts The composition is based on the temperature of the raw material mist existing in the first flow path. 如請求項1或2之獲得成膜用氣體原料之氣化器,其中於將上述主部中之形成有供上述原料霧流入之孔之面設為入側面,將上述主部中之形成有供排出上述氣體原料之孔之面設為出側面之情形時,自上述入側面朝向上述出側面,存在於其內部之上述第1流路之等面積圓等效直徑逐漸發生變化。For example, the vaporizer for obtaining gas raw materials for film formation of claim 1 or 2, wherein the main part is formed with holes for the raw material mist to flow into as the inlet side, and the main part is formed with When the surface of the hole for discharging the gas raw material is set as the exit side, the equivalent diameter of the equal-area circle of the first flow path existing in the entrance side toward the exit side gradually changes. 如請求項1或2之獲得成膜用氣體原料之氣化器,其中於上述第1流路以成為鉛直方向之方式配置之情形時,上述第2流路形成於水平方向,且其等直行。Such as the vaporizer for obtaining a gas raw material for film formation of claim 1 or 2, wherein when the first flow path is arranged in a vertical direction, the second flow path is formed in a horizontal direction, and the same goes straight . 如請求項1或2之獲得成膜用氣體原料之氣化器,其構成為於上述主部之外表面、與上述第1流路及上述第2流路之至少一部分之間具有空隙,而使內部之熱難以向外部釋出。The vaporizer for obtaining a gas raw material for film formation of claim 1 or 2 is configured to have a gap between the outer surface of the main part and at least a part of the first flow path and the second flow path, and It is difficult to release the internal heat to the outside. 一種氣化器之製造方法,其包括如下步驟: 準備複數片金屬製板材,於其主面上形成成為上述第2流路之一部分之溝槽,進而形成自其一主面向另一主面貫通之成為上述第1流路之一部分之貫通孔;及 使上述金屬製板材之主面彼此密接並藉由擴散接合而結合; 從而獲得如請求項1或2之氣化器。A manufacturing method of a gasifier, which includes the following steps: Prepare a plurality of metal plates, form grooves that become a part of the second flow path on the main surface, and form a through hole that penetrates from one main surface to the other main surface and becomes a part of the first flow path; and Making the main surfaces of the above-mentioned metal plates close to each other and joined by diffusion bonding; Thus, the vaporizer as claimed in item 1 or 2 is obtained.
TW108118522A 2019-05-29 2019-05-29 Vaporizer and manufacturing method thereof TWI734120B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW108118522A TWI734120B (en) 2019-05-29 2019-05-29 Vaporizer and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108118522A TWI734120B (en) 2019-05-29 2019-05-29 Vaporizer and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW202043534A true TW202043534A (en) 2020-12-01
TWI734120B TWI734120B (en) 2021-07-21

Family

ID=74668346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108118522A TWI734120B (en) 2019-05-29 2019-05-29 Vaporizer and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI734120B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819519B (en) * 2021-10-11 2023-10-21 日商琳科技股份有限公司 vaporizer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819519B (en) * 2021-10-11 2023-10-21 日商琳科技股份有限公司 vaporizer

Also Published As

Publication number Publication date
TWI734120B (en) 2021-07-21

Similar Documents

Publication Publication Date Title
US7673856B2 (en) Vaporizer and various devices using the same and an associated vaporizing method
US10147597B1 (en) Turbulent flow spiral multi-zone precursor vaporizer
JP2006322074A (en) Method for chemical vapor deposition with shower head and apparatus thereof
US20060278166A1 (en) Vaporizer, various devices using the same, and vaporizing method
US8197601B2 (en) Vaporizer, vaporization module and film forming apparatus
JP2010503768A (en) Chemical vapor deposition apparatus with shower head for positively adjusting the injection speed of reaction gas and method therefor
JP2002518839A (en) Dual channel gas distribution plate
TWI734120B (en) Vaporizer and manufacturing method thereof
JP4426180B2 (en) Fluid distribution unit for distributing fluid flow into a plurality of partial flows and fluid distribution device for a plurality of fluids
US20110079179A1 (en) Liquid material vaporizer and film deposition apparatus using the same
KR20170026531A (en) Device and method for generating vapor for a cvd- or pvd device from multiple liquid or solid source materials
JP7360201B2 (en) Vaporizer and its manufacturing method
WO2008041769A1 (en) Liquid material vaporizer
EP2154711B1 (en) Vaporizing apparatus and film forming apparatus provided with vaporizing apparatus
JP2014062323A (en) Gas injection device and injector pipe used therein
JP5016416B2 (en) Vaporizer and vaporization method
KR101665013B1 (en) Chemical vaporizer for manufacturing semi-sonductor
JP2017147447A (en) Vaporizer and thin film deposition device including the same
KR100972802B1 (en) semiconductor device fabrication equipment with showerhead
JP7133240B2 (en) Radical unit for injecting precursor and reaction gas together, and ALD apparatus including the same
KR100824339B1 (en) Three-dimensional chemical vapor deposition apparatus and deposition methods using the same
JP5845325B2 (en) Vaporization apparatus and film forming apparatus equipped with vaporization apparatus
KR20070089817A (en) Substrate surface treating apparatus
JP2013258415A (en) Vaporizer, and film deposition apparatus with vaporizer
JP2020020036A (en) Vaporizer