KR101665013B1 - Chemical vaporizer for manufacturing semi-sonductor - Google Patents
Chemical vaporizer for manufacturing semi-sonductor Download PDFInfo
- Publication number
- KR101665013B1 KR101665013B1 KR1020150049406A KR20150049406A KR101665013B1 KR 101665013 B1 KR101665013 B1 KR 101665013B1 KR 1020150049406 A KR1020150049406 A KR 1020150049406A KR 20150049406 A KR20150049406 A KR 20150049406A KR 101665013 B1 KR101665013 B1 KR 101665013B1
- Authority
- KR
- South Korea
- Prior art keywords
- chemical liquid
- chemical
- heat transfer
- liquid
- chamber
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 151
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000006200 vaporizer Substances 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 116
- 230000008016 vaporization Effects 0.000 claims abstract description 66
- 238000009834 vaporization Methods 0.000 claims abstract description 59
- 238000002309 gasification Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 230000000903 blocking effect Effects 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 8
- 239000002699 waste material Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a chemical vaporizer for semiconductor manufacturing, and more particularly, to a chemical vaporizer for semiconductor manufacturing, more particularly, to a chemical vaporizer for manufacturing semiconductors, in which a liquid chemical liquid is injected downward from the inside of a gasification chamber and a chemical liquid is vaporized into a gas state by laminating heat transfer blades The present invention relates to a chemical vaporizer for semiconductor manufacturing, which maximizes vaporization efficiency by differentiating and controlling the temperature of a block heater provided outside the vaporization chamber in each vertical region.
According to the present invention, it is possible to easily change the chemical liquid in the liquid state to the gaseous state, and it is possible to maximize the vaporization efficiency by allowing heat transfer to occur in the chemical liquid well.
Description
The present invention relates to a chemical vaporizer for semiconductor manufacturing, and more particularly, to a chemical vaporizer for semiconductor manufacturing, and more particularly, to a chemical vaporizer for chemical vapor deposition The present invention relates to a chemical vaporizer for semiconductor manufacturing, which maximizes vaporization efficiency by differentiating and controlling the temperature of a block heater provided outside the vaporization chamber in each vertical region.
Generally, in manufacturing processes related to semiconductors and electronic materials, an organometallic chemical or an inorganic metal chemical (hereinafter referred to as "chemical") is used when depositing a ceramic thin film and a thick film such as a metal thin film, a metal nitride thin film, A process such as Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) is used.
Because of the low vapor pressure at room temperature, the bubbling vaporization technique has been developed to produce air bubbles by mixing a carrier gas such as simple nitrogen or argon into the above-mentioned chemicals. However, since such a technique alone makes it difficult to obtain a desired amount of vaporization sufficiently, a vaporization system for vaporizing the chemical liquid by heating with a heating device has been used.
1 is a partial perspective view showing the structure of a vaporization system according to the prior art.
Referring to FIG. 1, a prior art vaporization system includes a
The
When the
The
Here, the
The
The chemical liquid in the liquid state flowing through the
However, in the prior art, there is no apparatus for allowing chemical vaporization to occur in the
According to an aspect of the present invention, there is provided a method of controlling a flow rate of a chemical liquid, the method comprising: providing a plurality of heat transfer vanes in a chemical liquid flow direction in a vaporization chamber where vaporization of a chemical liquid occurs; So that the vaporization efficiency can be maximized.
Another object of the present invention is to provide a chemical vaporizer for semiconductor manufacturing, which makes the path of the chemical solution longer by staggering the positions and shapes of the through holes formed in the heat transfer blades at the upper and lower ends.
A vaporizer for vaporizing and supplying a chemical solution used in a semiconductor manufacturing apparatus, comprising: a block heater (110) having a hollow portion (111) formed in the center thereof and a plurality of heating devices (112) arranged therein to generate heat; A
The heat transfer blade (160) includes a central fixed post (161); And a plate-shaped vane (162) having a plurality of through holes (162a) through which the chemical liquid passes, the plate vane (162) being laminated on the fixed column (161) 162a are installed at positions staggered from the
The heat transfer blade (160) includes a central fixed post (161); A closing blade (163) having a diameter smaller than an inner diameter of the chemical liquid ejection space (121); And an opening blade (164) having a diameter equal to an inner diameter of the chemical liquid ejection space and having a through hole (164a) through which the chemical liquid passes, wherein the closing blade (163) and the opening blade (164) And are alternately stacked on the
The heat transfer blade (160) includes a central fixed post (161); And a
According to another embodiment of the present invention, there is provided a vaporizer for vaporizing and supplying a chemical solution used in a semiconductor manufacturing apparatus, wherein a
The heat transfer blade (160) includes a central fixed post (161); And a diameter of the shut-off
The present invention further includes a pipe heater (170) installed inside the fixed column (161) to generate heat.
According to the present invention, it is possible to easily change the chemical liquid in a liquid state to a gaseous state, and heat transfer to the chemical liquid can be performed well, thereby maximizing the vaporization efficiency.
In addition, it has the effect of maximizing the degree of vaporization and the speed of the chemical liquid through the temperature control of the plurality of heat transfer blades and the flow path of the chemical liquid and the flow path of the chemical liquid.
1 is a partial perspective view showing the structure of a vaporization system according to the prior art;
2 is a perspective view showing the entire structure of a vaporizer according to an embodiment of the present invention.
3 is an exploded perspective view showing the internal structure of the vaporizer.
4 is a partial perspective view showing the internal structure of the block heater.
5 is a partial perspective view showing the internal structure of the gasification chamber;
6 is a perspective view showing a structure of a heat transfer blade;
7 is a cross-sectional view showing a laminated structure of the heat transfer blades of FIG. 6;
8 is a cross-sectional view showing a flow path of the chemical liquid in the vaporization chamber.
9 is a sectional view showing a laminated structure of a heat transfer blade according to another embodiment.
10 is a cross-sectional view showing a flow path of the chemical liquid in the vaporization chamber.
11 is a partial perspective view showing the internal structure of a gasification chamber according to another embodiment.
12 is a perspective view showing a structure of the heat transfer blade of FIG.
13 is a plan view showing a structure of the heat transfer blade of FIG.
14 is a cross-sectional view showing a flow path of the chemical liquid in the vaporization chamber of FIG.
15 is a partial perspective view showing the internal structure of the vaporization chamber according to yet another embodiment;
16 is a plan view showing the structure of the heat transfer blade of FIG. 15;
17 is a cross-sectional view showing a flow path of a chemical liquid in the vaporization chamber of FIG. 15;
Hereinafter, a "chemical vaporizer for semiconductor manufacturing" (hereinafter referred to as a " vaporizer ") according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 2 is a perspective view showing the entire structure of a vaporizer according to an embodiment of the present invention, and FIG. 3 is an exploded perspective view showing an internal structure of a vaporizer.
The
As the heating means, a hollow
A
The
The chamber-side
4 is a partial perspective view showing the internal structure of the block heater.
The
A plurality of
Generally, the temperature of the chemical liquid is relatively low at the initial stage of vaporization, and the temperature is further lowered because the pressure is lowered while passing through the chemical
FIG. 6 is a perspective view showing the structure of the heat transfer blade, FIG. 7 is a cross-sectional view showing a lamination structure of the heat transfer blades of FIG. 6, and FIG. 8 is a cross- And FIG.
The
The interior of the
A chemical
The chemical
The liquid chemical liquid injected through the
The temperature and the density of the chemical liquid are highest when they are discharged from the
The temperature of the
The chemical liquid, which has been changed into the gaseous state in the
A
The vaporized chemical liquid collected at the lower end of the
Inside the
Depending on the vaporization point, density and vaporization amount of the chemical liquid, the
As shown in FIGS. 5 and 6, the
By preventing the chemical liquid from moving in a straight line, heat is transferred to the chemical liquid evenly over a long period of time, so that vaporization can be performed more easily. And prevents the vaporized chemical liquid from moving downward and then liquefying again as the temperature is lowered. For this purpose, the plate of the plate-
The plate-shaped
Preferably, a plurality of through
Since the fixing
It is preferable that the
8, the liquid chemical liquid injected into the
The chemical liquid in the liquid state or gaseous state is downwardly moved by the plate-shaped
FIG. 9 is a cross-sectional view illustrating a stacked structure of heat transfer blades according to another embodiment, and FIG. 10 is a cross-sectional view illustrating a flow path of a chemical solution in the vaporization chamber.
In the above-described example, the flow path of the chemical liquid is changed by making the positions of the through
As shown in FIG. 9, in another embodiment, the diameter and the shape of the wings stacked on the upper and lower sides are differently configured. That is, the
A space is formed between the rim of the
A through
In order to smoothly move the chemical liquid and prevent the change in speed or pressure, the area of the through-
By stacking the
11 is a perspective view showing the internal structure of the vaporization chamber according to yet another embodiment, FIG. 12 is a perspective view showing the structure of the heat transfer blade shown in FIG. 11, FIG. 13 is a plan view showing the structure of the heat transfer blade shown in FIG. 14 is a cross-sectional view showing the flow path of the chemical liquid in the vaporization chamber of FIG.
The
Unlike the previously used structure, the
The spaces between the teeth are shifted from each other in the
15 is a partial perspective view showing the internal structure of the vaporization chamber according to yet another embodiment, FIG. 16 is a plan view showing the structure of the heat transfer blade of FIG. 15, and FIG. 17 is a cross- Fig.
In the three previous embodiments, no structure is formed on the inner wall of the
In the fourth embodiment, a protruding structure is formed on the wall surface of the chemical
As shown in FIG. 15, an
A plurality of blocking
The
The diameter of the
Due to this structure, the chemical liquid moves downward along the course of the curve. In this process, the residence time is extended and the contact area is increased.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, As will be understood by those skilled in the art. Therefore, it should be understood that the above-described embodiments are to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than the foregoing description, It is intended that all changes and modifications derived from the equivalent concept be included within the scope of the present invention.
100: carburetor 110: block heater
111: hollow part 112: heating device
120: gasification chamber 121: chemical liquid injection space
122: Blocking plate 130:
131: inlet 132: liquid flow tube
133: injection nozzle 140:
141: inlet 142: outlet
150: Vacuum pump line 151: Vacuum pump line inlet
152: vacuum pump line outlet 160: heat transfer blade
161: fixed post 162: plate-shaped blade
162a, 164a: through hole 163: closing blade
164: open wing 165: serrated wing
166: blocking blade 170: pipe heater
Claims (7)
A hollow heater 111 is formed in the center, and a plurality of heating devices 112 are arranged vertically to generate heat;
A chemical solution injection space 121 is formed in the hollow part 111 of the block heater 110 and is vaporized while the chemical solution moves and an annular blocking plate 122 is protruded from the inner wall surface A vaporization chamber 120;
A chemical liquid injecting unit 130 connected to the upper portion of the gasification chamber 120 to inject liquid chemical liquid into the gasification chamber 120;
A gas discharging unit 140 connected to the lower portion of the gasification chamber 120 to supply a gaseous vaporized chemical liquid to the semiconductor manufacturing apparatus;
The gas supply unit 120 is installed at the lower side of the gasification chamber 120 on the opposite side of the gas discharge unit 140 with respect to the gasification chamber 120 and supplies the chemical solution vaporized in the gasification chamber 120 to the semiconductor manufacturing apparatus A vacuum pump line 150 for discharging the chemical solution remaining in the vaporization chamber 120 to a waste facility when the chemical solution is not present;
A heat transfer blade (160) installed in the chemical liquid injection space (121) and changing the flow path of the chemical liquid to increase the residence time;
And a pipe heater 170 for generating heat in the heat transfer blades 160 to heat the heat transfer blades 160,
The heat transfer blade (160)
A center pillar 161 in which a pipe heater 170 generating heat is installed;
And a blocking blade (166) provided on the surface of the fixing post (161) at a height at which the blocking plate (122) is not formed,
The blocking plate 122 has a circular through-hole at the center thereof,
Wherein the diameter of the blocking blade (166) is smaller than the inner diameter of the vaporization chamber (120) and larger than the central circular hole of the blocking plate (122).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150027938 | 2015-02-27 | ||
| KR20150027938 | 2015-02-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160105710A KR20160105710A (en) | 2016-09-07 |
| KR101665013B1 true KR101665013B1 (en) | 2016-10-12 |
Family
ID=56949865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150049406A KR101665013B1 (en) | 2015-02-27 | 2015-04-08 | Chemical vaporizer for manufacturing semi-sonductor |
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| Country | Link |
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| KR (1) | KR101665013B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220105317A (en) | 2021-01-20 | 2022-07-27 | 주식회사 메카로 | Vaporizer for semiconductor process using carrier gas |
| KR102555279B1 (en) | 2021-01-20 | 2023-07-13 | 주식회사 메카로 | Vaporizer for semiconductor process with improved vaporization efficiency |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359238A (en) * | 2001-06-01 | 2002-12-13 | Tokyo Electron Ltd | Solid raw material vaporization apparatus and method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100331024B1 (en) * | 2000-06-05 | 2002-04-03 | 김상호 | Liquid source injection vaporizer |
| JP4553245B2 (en) * | 2004-09-30 | 2010-09-29 | 東京エレクトロン株式会社 | Vaporizer, film forming apparatus and film forming method |
| KR20090090479A (en) | 2008-02-21 | 2009-08-26 | (주)지오엘리먼트 | Vaporization apparatus with high vaporiazation efficiency |
| JP5683132B2 (en) * | 2010-05-20 | 2015-03-11 | 三菱マテリアルテクノ株式会社 | Concentrator |
| KR101330725B1 (en) | 2011-10-28 | 2013-11-20 | (주)지오엘리먼트 | Vaporizing apparatus and bottom system |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359238A (en) * | 2001-06-01 | 2002-12-13 | Tokyo Electron Ltd | Solid raw material vaporization apparatus and method |
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| Publication number | Publication date |
|---|---|
| KR20160105710A (en) | 2016-09-07 |
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