TW202041967A - Photomask, method of manufacturing a photomask, and method of manufacturing a display device - Google Patents
Photomask, method of manufacturing a photomask, and method of manufacturing a display device Download PDFInfo
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- TW202041967A TW202041967A TW109107827A TW109107827A TW202041967A TW 202041967 A TW202041967 A TW 202041967A TW 109107827 A TW109107827 A TW 109107827A TW 109107827 A TW109107827 A TW 109107827A TW 202041967 A TW202041967 A TW 202041967A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
Description
本發明係關於一種光罩、光罩之製造方法、及顯示裝置之製造方法。The present invention relates to a photomask, a manufacturing method of the photomask, and a manufacturing method of a display device.
伴隨顯示裝置等電子器件製品之高精細化等,對於其等之製造中使用之光罩所具備之轉印用圖案而言,對更嚴格之尺寸控制之要求提昇。With the high-definition of electronic device products such as display devices, the demand for more stringent dimensional control for the transfer patterns of the photomasks used in the manufacture of such devices has increased.
與此相關,例如,於專利文獻1中記載有對遮光膜之圖案更準確地進行尺寸控制之方法。即,記載有如下方法,該方法係將抗蝕圖案作為遮罩進行遮光膜之蝕刻,且將未被抗蝕圖案覆蓋之遮光膜去除,停止蝕刻後,自基板之背面側照射光,使未被遮光膜遮光之抗蝕劑感光進行顯影,藉此,掌握遮光膜之邊緣位置,決定追加蝕刻時間。In relation to this, for example,
又,例如,於專利文獻2中,對用以準確地進行停止蝕刻之時點之檢測(終點檢測)之方法進行了記載。根據專利文獻2中記載之方法,使用包含用以形成意圖獲得之轉印用圖案之轉印用圖案資料、及用以形成尺寸測定用之監視圖案之監視圖案資料的圖案資料,對抗蝕膜進行描繪,形成抗蝕圖案。將該抗蝕圖案作為遮罩,對光學膜實施特定時間之蝕刻之後,測定監視圖案之尺寸,且基於該尺寸,對光學膜實施追加之蝕刻。 [先前技術文獻] [專利文獻]In addition, for example,
[專利文獻1]日本專利特開2010-169750號公報 [專利文獻2]日本專利特開2015-191088號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-169750 [Patent Document 2] Japanese Patent Laid-Open No. 2015-191088
[發明所欲解決之問題][The problem to be solved by the invention]
對顯示裝置(液晶顯示裝置、有機EL(Electro-luminescence,電致發光)顯示裝置等)所要求之畫質或亮度、動作速度、進而省電力性能之等級前所未有地提昇。根據此種狀況,期望用於顯示裝置之製造之光罩之轉印用圖案之微細化、高密度化。The level of image quality, brightness, operating speed, and power saving performance required for display devices (liquid crystal display devices, organic EL (Electro-luminescence) display devices, etc.) has never been improved. Under such circumstances, there is a demand for miniaturization and high-density of transfer patterns of photomasks used in the manufacture of display devices.
製造顯示裝置時,利用光微影步驟製造具備預期之轉印用圖案之光罩。即,於透明基板上成膜之光學膜上形成抗蝕膜,對該抗蝕膜利用能量線(雷射光等)進行描繪後顯影,將藉此獲得之抗蝕圖案作為遮罩,對光學膜實施蝕刻。視需要,進而成膜其他光學膜,且重複光微影步驟,形成最終之轉印用圖案。此處所謂之光學膜例如包含將對光罩之曝光之光遮光之遮光膜、使曝光之光之一部分透過之半透光膜、或者相移膜或蝕刻終止膜等功能膜等。When manufacturing a display device, a photolithography step is used to manufacture a photomask with a desired transfer pattern. That is, a resist film is formed on an optical film formed on a transparent substrate, the resist film is drawn with energy rays (laser light, etc.) and then developed, and the resist pattern obtained thereby is used as a mask for the optical film Perform etching. If necessary, other optical films are further formed, and the photolithography step is repeated to form the final transfer pattern. The optical film referred to here includes, for example, a light-shielding film that shields the light exposed to the mask, a semi-transmissive film that transmits part of the exposed light, or a functional film such as a phase shift film or an etching stop film.
顯示裝置製造用光罩係尺寸(例如主表面之一邊為300 mm以上之四邊形等)大於半導體器件製造用光罩(一般地,主表面之一邊為5~6英吋),而且,存在多種尺寸。因此,於光學膜之蝕刻中,與需要真空腔室之乾式蝕刻相比,適應濕式蝕刻之情形時,存在裝置或步驟之負擔較小,又,容易控制之類優點。The size of the photomask for display device manufacturing (for example, a quadrilateral whose main surface is 300 mm or more) is larger than the photomask for semiconductor device manufacturing (generally, one side of the main surface is 5-6 inches), and there are many sizes . Therefore, in the etching of optical films, compared to dry etching that requires a vacuum chamber, when it is adapted to wet etching, there are advantages such as less burden on equipment or steps, and easier control.
另一方面,亦存在來源於濕式蝕刻之困難。一般地,乾式蝕刻具有各向異性蝕刻之性質,與此相對,濕式蝕刻係各向同性地進行蝕刻之各向同性蝕刻之性質較強。因此,亦自蝕刻對象之光學膜之側面進行蝕刻(側蝕)。圖1係表示作為光學膜之遮光膜之側面藉由濕式蝕刻而蝕刻之狀態之SEM(Scanning Electron Microscope,掃描電子顯微鏡)照片。蝕刻而成之光學膜圖案之尺寸未必與成為蝕刻遮罩之抗蝕圖案之尺寸一致。於已實施特定時間之蝕刻之時間點,光學膜圖案之邊緣已進入抗蝕圖案之邊緣位置之內側,於自抗蝕圖案之正面側觀察之情形時,光學膜圖案成為由抗蝕圖案覆蓋之狀態,因此,無法直接測量其尺寸。因此,難以決定蝕刻之終點。On the other hand, there are also difficulties derived from wet etching. In general, dry etching has the properties of anisotropic etching. In contrast, wet etching has stronger properties of isotropic etching in which etching is performed isotropically. Therefore, etching (side etching) is also performed from the side surface of the optical film of the etching target. Fig. 1 is a SEM (Scanning Electron Microscope) photograph showing a state where the side surface of a light-shielding film as an optical film is etched by wet etching. The size of the etched optical film pattern may not necessarily be the same as the size of the resist pattern that becomes the etching mask. At the time point when the etching for a specific time has been implemented, the edge of the optical film pattern has entered the inner side of the edge position of the resist pattern. When viewed from the front side of the resist pattern, the optical film pattern becomes covered by the resist pattern Status, therefore, its size cannot be measured directly. Therefore, it is difficult to determine the end point of etching.
即便為了達到預期之圖案尺寸而能夠掌握蝕刻速率(每一單位時間之蝕刻量),僅依存於該蝕刻速率之掌握而決定蝕刻之所需時間亦未必有效。例如,濕式蝕刻時成為蝕刻遮罩之抗蝕圖案係受到抗蝕劑之顯影溫度或顯影劑濃度之類顯影條件之變動或不均一之影響下而形成者,難以使該顯影條件始終固定。Even if the etching rate (the amount of etching per unit time) can be grasped in order to achieve the desired pattern size, it is not necessarily effective to determine the required etching time only depending on the grasp of the etching rate. For example, when the resist pattern used as an etching mask during wet etching is formed under the influence of variation or unevenness of development conditions such as the development temperature of the resist or the concentration of the developer, it is difficult to keep the development conditions constant.
進而,抗蝕圖案之邊緣形狀係由描繪而形成者,但已知抗蝕圖案之膜厚或光學膜之表面反射率對描繪條件造成影響。然而,抗蝕圖案之膜厚或光學膜之表面性質亦仍然不容易始終設為固定值。Furthermore, the edge shape of the resist pattern is formed by drawing, but it is known that the film thickness of the resist pattern or the surface reflectance of the optical film affects drawing conditions. However, it is still not easy to always set the film thickness of the resist pattern or the surface properties of the optical film to a fixed value.
即,將光學膜進行濕式蝕刻時之實際之蝕刻之過程無法避開來源於光學膜與蝕刻劑之純粹之蝕刻速率以外之因素、尤其起因於抗蝕劑之變動因素。That is, the actual etching process when the optical film is wet-etched cannot avoid factors other than the pure etching rate of the optical film and the etchant, especially the variable factors caused by the resist.
考慮到上述現狀,為進行尺寸精度較高之圖案化,則不受上述變動因素之影響,均能掌握直至蝕刻終點為止之準確之蝕刻時間(即,所需之剩餘蝕刻量必須進行蝕刻之蝕刻時間)較為有益。Considering the above-mentioned current situation, in order to perform patterning with high dimensional accuracy, it is not affected by the above-mentioned variable factors, and the accurate etching time until the end of the etching can be grasped (that is, the required remaining etching amount must be etched Time) is more useful.
專利文獻1中記載之方法係於遮光膜之蝕刻後,自基板之背面照射光,將未被遮光膜遮光之部分之抗蝕圖案感光進行顯影。藉此,使抗蝕圖案之邊緣位置與遮光膜之邊緣位置一致,且藉由掌握該邊緣位置而決定追加蝕刻時間。根據該方法,可掌握由抗蝕圖案覆蓋之遮光膜之邊緣位置,因此,可獲得所需之追加蝕刻量、即追加蝕刻時間。The method described in
然而,該方法對於滿足近來之顯示裝置所要求之極其嚴格之尺寸精度未必有效。其原因在於,藉由專利文獻1中記載之方法,自基板之背面照射光後進行顯影時,因光罩基板面內之顯影速度不均而導致難以使抗蝕圖案之邊緣與遮光膜之邊緣完全一致。因此,於光學膜圖案之尺寸測定時,產生無法保證是否已直接測定光學膜之尺寸從而無法獲得充分之測定精度之情形。However, this method is not necessarily effective for meeting the extremely strict dimensional accuracy required by recent display devices. The reason is that, by the method described in
專利文獻2中記載之方法係藉由將形成有監視圖案之部分之抗蝕膜局部去除,而自正面側直接測定監視圖案之尺寸。基於該監視圖案之尺寸運算追加蝕刻時間,對光學膜實施蝕刻。根據該方法,測定將光學膜圖案化所得之監視圖案之尺寸,因此,不易受到抗蝕劑引起之變動因素影響。In the method described in
然而,專利文獻2中記載之方法對於獲得較高之尺寸精度難言充分。其原因在於,專利文獻2中記載之方法之尺寸測定係根據監視圖案間接地獲得需要尺寸控制之轉印用圖案之尺寸,而非直接測定需要尺寸控制之轉印用圖案之尺寸,因此,運算所得之追加蝕刻時間難言準確。However, the method described in
考慮到上述現狀,為進行尺寸精度較高之圖案化,則獲得如下方法較為有益,該方式係不易受到抗蝕劑引起之變動因素之影響,仍可精細緻密地掌握直至蝕刻終點為止之準確之蝕刻時間(即,適合光學膜所需之蝕刻量之蝕刻時間)。In consideration of the above-mentioned current situation, in order to perform patterning with high dimensional accuracy, it is more beneficial to obtain the following method, which is not easily affected by the change factors caused by the resist, and can still accurately and densely grasp the accuracy until the end of the etching Etching time (ie, etching time suitable for the amount of etching required for the optical film).
如上述所提及,以液晶或有機EL為代表之顯示裝置中存在具備較先前更微細之構造者增加之傾向。該傾向係對於負責該顯示裝置之驅動之薄膜電晶體(TFT)基板或彩色濾光片(感光性間隔材、色版)等欲藉由光罩獲得之構成物分別共通者,且與該等顯示裝置中之圖像之精細度、動作之速度、亮度、省電力等需求有關。As mentioned above, the display devices represented by liquid crystal or organic EL tend to have more finer structures than before. This tendency is common to thin-film transistor (TFT) substrates or color filters (photosensitive spacers, color plates) and other components that are to be obtained by photomasks, which are responsible for driving the display device, and are shared with these The fineness of the image in the display device, the speed of the action, the brightness, and the power saving requirements are related.
如上所述,顯示裝置製造用光罩具有之轉印用圖案之CD(Critical Dimension(臨界尺寸):以下,以圖案寬度之含義使用)之精度要求變得嚴格。此情況不限於線與間隔圖案、孔圖案等圖案設計而均為相同。例如,期待滿足如轉印用圖案之CD精度成為目標值±50 nm以下、進而目標值±20 nm以下之嚴格之規格的方法。As described above, the accuracy requirements of the CD (Critical Dimension: hereinafter, used in the meaning of the pattern width) of the transfer pattern possessed by the mask for manufacturing the display device have become strict. This case is not limited to pattern designs such as line and space patterns, hole patterns, etc., but all are the same. For example, a method that satisfies strict specifications such that the CD accuracy of the transfer pattern becomes a target value of ±50 nm or less, and furthermore, a target value of ±20 nm or less.
本發明人著眼於上述課題,進行了銳意研究,以使所形成之轉印用圖案之CD之中心值高精度地與目標值一致。 本發明之目的在於獲得可形成尺寸精度較高之轉印用圖案之光罩之製造方法。 [解決問題之技術手段]The inventor of the present invention focused on the above-mentioned problems and conducted intensive research to make the center value of the CD of the formed transfer pattern coincide with the target value with high accuracy. The purpose of the present invention is to obtain a method for manufacturing a photomask that can form a transfer pattern with high dimensional accuracy. [Technical means to solve the problem]
(第1態樣) 本發明之第1態樣係 一種光罩之製造方法,其係於透明基板上具備轉印用圖案者,且包含如下步驟: 準備上述透明基板上依次形成有光學膜與抗蝕膜之光罩基板; 初期顯影步驟,其係對上述抗蝕膜藉由使用描繪裝置進行描繪且進行顯影而形成抗蝕圖案; 預蝕刻步驟,其係將上述抗蝕圖案作為遮罩,對上述光學膜實施特定時間之濕式蝕刻,形成基於上述光學膜之預備圖案; 追加顯影步驟,其係於藉由上述預蝕刻步驟形成之上述預備圖案之邊緣之至少一部分位於上述抗蝕圖案之區域內之狀態下,對上述抗蝕圖案實施追加之顯影,使上述抗蝕圖案之邊緣後退,使上述預備圖案之邊緣露出; 測定步驟,其係藉由掌握上述預備圖案之邊緣位置,而測定上述預備圖案之特定部位之尺寸;及 追加蝕刻步驟,其係根據測定所得之上述尺寸決定追加蝕刻量,且基於該追加蝕刻量,進而進行上述光學膜之蝕刻,形成包括上述光學膜之確定圖案。(First aspect) The first aspect of the present invention is a method for manufacturing a photomask, which is provided with a pattern for transfer on a transparent substrate, and includes the following steps: preparing the above transparent substrate to sequentially form an optical film and The photomask substrate of the resist film; the initial development step, which is to draw and develop the above-mentioned resist film by a drawing device to form a resist pattern; the pre-etching step, which uses the above-mentioned resist pattern as a mask, Perform wet etching on the optical film for a specific time to form a preliminary pattern based on the optical film; an additional development step is performed when at least a part of the edge of the preliminary pattern formed by the pre-etching step is located on the resist pattern In the state in the area, perform additional development on the resist pattern to retreat the edge of the resist pattern to expose the edge of the prepared pattern; the measurement step is to determine the edge position of the prepared pattern The size of the specific part of the preliminary pattern; and the additional etching step, which determines the additional etching amount based on the measured size, and based on the additional etching amount, the optical film is further etched to form a certain pattern including the optical film .
(第2態樣) 本發明之第2態樣係如上述第1態樣之光罩之製造方法,其中 於上述追加顯影步驟中,使用組成及濃度之至少一者相對於上述初期顯影步驟中應用之顯影液不同的顯影液。(Second aspect) The second aspect of the present invention is a method of manufacturing a photomask as in the first aspect, wherein in the additional development step, at least one of the composition and the concentration is used relative to the initial development step. Different developers are used.
(第3態樣) 本發明之第3態樣係如上述第1或第2態樣之光罩之製造方法,其中 於上述追加蝕刻步驟中,於上述確定圖案之邊緣附近,以特定寬度形成膜厚減少之膜厚減少部。(Third Aspect) The third aspect of the present invention is a method for manufacturing a photomask as in the first or second aspect, wherein in the additional etching step, the pattern is formed with a specific width near the edge of the determined pattern Film thickness reduction part of film thickness reduction.
(第4態樣) 本發明之第4態樣係如上述第3態樣之光罩之製造方法,其中 上述特定寬度大於0 μm且為0.8 μm以下。(Fourth aspect) The fourth aspect of the present invention is the manufacturing method of the photomask as the third aspect, wherein the above-mentioned specific width is greater than 0 μm and less than 0.8 μm.
(第5態樣) 本發明之第5態樣係如上述第1至第4態樣中任一態樣之光罩之製造方法,其中 上述光學膜包含遮光膜,且該遮光膜於表面具備抗反射層。(Fifth aspect) The fifth aspect of the present invention is a method for manufacturing a photomask as in any one of the first to fourth aspects, wherein the optical film includes a light-shielding film, and the light-shielding film has Anti-reflective layer.
(第6態樣) 本發明之第6態樣係如上述第1至第4態樣中任一態樣之光罩之製造方法,其中 上述光學膜包含遮光膜,且 於上述預蝕刻步驟後包含追加曝光步驟,該追加曝光步驟係自上述透明基板之背面側照射光,將上述抗蝕圖案中未被上述遮光膜遮光之部分進行曝光。(Sixth aspect) The sixth aspect of the present invention is a method of manufacturing a photomask as in any one of the first to fourth aspects, wherein the optical film includes a light-shielding film, and after the pre-etching step It includes an additional exposure step that irradiates light from the back side of the transparent substrate to expose a portion of the resist pattern that is not shielded by the light-shielding film.
(第7態樣) 本發明之第7態樣係如上述第1至第5態樣中任一態樣之光罩之製造方法,其中 上述光學膜係遮光膜, 上述光罩基板係於上述透明基板與上述遮光膜之間具備使光罩之曝光中使用之曝光之光之一部分透過的半透光膜,且 上述半透光膜與上述光學膜包含彼此具有蝕刻選擇性之材料。(Seventh aspect) The seventh aspect of the present invention is a method of manufacturing a photomask as in any one of the above-mentioned first to fifth aspects, wherein the above-mentioned optical film is a light-shielding film, and the above-mentioned photomask substrate is The transparent substrate and the light-shielding film are provided with a semi-transmissive film that transmits a part of the light used in the exposure of the photomask, and the semi-transparent film and the optical film include materials with etching selectivity to each other.
(第8態樣) 本發明之第8態樣係如上述第1至第7態樣中任一態樣之光罩之製造方法,其中 上述光罩基板係將形成於上述透明基板上之上述光學膜至少一部分圖案化而成的光罩中間體。(Eighth aspect) The eighth aspect of the present invention is a method for manufacturing a photomask as in any one of the above-mentioned first to seventh aspects, wherein the above-mentioned photomask substrate is the above-mentioned one that will be formed on the above-mentioned transparent substrate. A photomask intermediate formed by patterning at least a part of an optical film.
(第9態樣) 本發明之第9態樣係一種顯示裝置之製造方法,其包含如下步驟: 準備利用如上述第1至第8態樣中任一態樣之製造方法製造之光罩;及 使用曝光裝置,將上述轉印用圖案轉印至被轉印體上。(Ninth aspect) The ninth aspect of the present invention is a method of manufacturing a display device, which includes the following steps: preparing a photomask manufactured by the manufacturing method of any one of the first to eighth aspects; And use the exposure device to transfer the above-mentioned transfer pattern to the transfer object.
(第10態樣) 本發明之第10態樣係一種光罩,其係透明基板上具備轉印用圖案者, 上述轉印用圖案包含露出上述透明基板之透光部、及於上述透明基板上形成有光學膜之非透光部, 上述非透光部係於與上述透光部相鄰之邊緣部分具有上述光學膜之膜厚局部減少之特定寬度之膜厚減少部,且 上述特定寬度大於0 μm且為0.8 μm以下。(Tenth aspect) The tenth aspect of the present invention is a photomask, which is provided with a pattern for transfer on a transparent substrate. The pattern for transfer includes a light-transmitting portion exposing the transparent substrate, and the transparent substrate The non-transmissive part of the optical film is formed thereon, and the non-transmissive part is a film thickness reduction part with a specific width where the thickness of the optical film is locally reduced at the edge portion adjacent to the transparent part, and the specific width More than 0 μm and less than 0.8 μm.
(第11態樣) 本發明之第11態樣係如上述第10態樣之光罩,其中 上述光學膜係於表面上具備抗反射層之遮光膜,且 上述膜厚減少部係藉由上述抗反射層之至少一部分消失而形成者。(Eleventh aspect) The eleventh aspect of the present invention is a mask as the tenth aspect, wherein the optical film is a light-shielding film provided with an anti-reflection layer on the surface, and the film thickness reduction part is achieved by At least a part of the anti-reflective layer disappears and is formed.
(第12態樣) 本發明之第12態樣係一種顯示裝置之製造方法,其包含如下步驟: 準備如上述第10或第11態樣之光罩;及 使用曝光裝置,將上述轉印用圖案轉印至被轉印體上。 [發明之效果](Twelfth aspect) The twelfth aspect of the present invention is a method for manufacturing a display device, which includes the following steps: preparing a mask as in the tenth or eleventh aspect; and using an exposure device to apply the transfer The pattern is transferred to the transferred body. [Effects of the invention]
根據本發明,可獲得能夠形成尺寸精度較高之轉印用圖案之光罩之製造方法。According to the present invention, a method for manufacturing a photomask capable of forming a transfer pattern with high dimensional accuracy can be obtained.
[第1實施形態] 對本發明之光罩之製造方法之第1實施形態,一面參照圖式一面進行說明。圖2係以步驟順序例示本發明之第1實施形態之光罩之製造方法之概略剖視圖。[First Embodiment] The first embodiment of the manufacturing method of the photomask of the present invention will be described with reference to the drawings. 2 is a schematic cross-sectional view illustrating the manufacturing method of the photomask according to the first embodiment of the present invention in the order of steps.
本發明之光罩係藉由下述光罩基板中應用光微影而獲得,且具有將形成於透明基板上之光學膜圖案化而成之轉印用圖案。轉印用圖案可包含露出透明基板之部分即透光部、及形成有光學膜之部分即非透光部。非透光部可包含遮光部與下述半透光部。The photomask of the present invention is obtained by applying photolithography to the following photomask substrate, and has a transfer pattern formed by patterning an optical film formed on a transparent substrate. The pattern for transfer may include a light-transmitting part where the transparent substrate is exposed, and a non-light-transmitting part where the optical film is formed. The non-transmissive part may include a light-shielding part and a semi-transmissive part described below.
再者,於本說明書中,光罩基板係指於透明基板之主表面形成有光學膜者,且包含所謂之光罩基底。光罩基板亦包含光學膜上形成有抗蝕膜之附抗蝕劑之光罩基底。又,光罩基板亦可為以製造具有積層構造之膜圖案之光罩為目的已將一部分光學膜圖案化而成的光罩中間體。Furthermore, in this specification, the mask substrate refers to the one with the optical film formed on the main surface of the transparent substrate, and includes the so-called mask base. The photomask substrate also includes a photomask base with resist on which a resist film is formed on the optical film. In addition, the photomask substrate may also be a photomask intermediate formed by patterning a part of the optical film for the purpose of manufacturing a photomask with a film pattern of a laminated structure.
對本第1實施形態之光罩之製造方法具體地進行說明。 <準備光罩基板之步驟> 如圖2(a)所示,準備光罩基板20。The manufacturing method of the photomask of this 1st Embodiment is demonstrated concretely. <Steps of preparing a photomask substrate> As shown in FIG. 2(a), a
(光罩基板) 光罩基板20可設為透明基板21上形成有作為光學膜之一例之遮光膜22且於遮光膜22上形成有抗蝕膜23者。遮光膜22可具備遮光層22a,進而於遮光層22a之表面具備下述抗反射層22b。(Photomask Substrate) The
作為用於製造光罩基板20之透明基板21,使用將包含合成石英等透明材料者平坦、平滑地研磨而成者。例如,主表面係一邊為300 mm~1800 mm左右之四邊形,且厚度為5~13 mm左右。As the
光罩基板20之光學膜係藉由濺鍍法等公知之成膜法而形成於透明基板21之主表面上。再者,於本說明書中,將光罩基板20具有之2個主面中形成轉印用圖案之側之主面設為「主表面」,將另一主面設為「背面」。於透明基板21,可形成單一之光學膜,或者,亦可積層複數個光學膜。The optical film of the
光學膜可設為遮光膜22(相對於使用光罩時之曝光之光之光學密度OD(Optical Density)為2以上,較佳為3以上)。或者,光學膜亦可設為使曝光之光之一部分透過之半透光膜。此時,半透光膜之曝光之光透過率可以透明基板21之曝光之光透過率為基準(100%)設為5~80%。The optical film can be set as the light-shielding film 22 (the optical density OD (Optical Density) relative to the exposure light when the mask is used is 2 or more, preferably 3 or more). Alternatively, the optical film may also be a semi-transmissive film that transmits a part of exposed light. At this time, the light transmittance of the semi-transparent film can be set to 5 to 80% based on the light transmittance of the transparent substrate 21 (100%).
此種半透光膜可有用地應用於所謂多灰階光罩(亦稱為灰階光罩或半色調光罩等)或半色調式相移光罩等。於該情形時,曝光之光透過率較佳為20~70%,進而較佳為30~60%。又,半透光膜相對於上述曝光之光之相移量可設為較佳為90度以下,更佳為60度以下。Such a semi-transmissive film can be usefully applied to so-called multi-grayscale masks (also called grayscale masks or halftone masks, etc.) or halftone phase shift masks. In this case, the light transmittance of exposure is preferably 20 to 70%, and more preferably 30 to 60%. In addition, the phase shift amount of the semi-transparent film with respect to the above-mentioned exposure light can be preferably set to be 90 degrees or less, and more preferably 60 degrees or less.
或者,於將半透光膜應用於半色調式相移光罩之情形時,曝光之光透過率較佳為5~40%,進而較佳為5~30%。又,半透光膜相對於上述曝光之光之相移量較佳為可設為180±20度之範圍內。Alternatively, when the semi-transparent film is applied to the halftone phase shift mask, the light transmittance of the exposure is preferably 5-40%, and more preferably 5-30%. Moreover, the phase shift amount of the semi-transparent film with respect to the above-mentioned exposure light is preferably set within the range of 180±20 degrees.
光學膜之膜厚係根據其功能而決定,但較佳為5~250 nm。例如,若光學膜為遮光膜22,則可將其膜厚設為50~200 nm。The thickness of the optical film is determined according to its function, but it is preferably 5 to 250 nm. For example, if the optical film is the light-shielding
光學膜較佳為可進行濕式蝕刻者。光學膜之材料例如可包含鉻(Cr)。於光學膜為遮光膜22之情形時,可使用鉻或其化合物,於光學膜為半透光膜之情形時,可較佳地使用包含鉻化合物者。作為鉻化合物,例如可為包含鉻之氧化物、氮化物、碳化物、氮氧化物、及碳氮氧化物之任一者之膜。The optical film is preferably one capable of wet etching. The material of the optical film may include chromium (Cr), for example. When the optical film is the light-shielding
進而,於光學膜為遮光膜22或半透光膜之情形時,亦可應用包含鉻以外之金屬、例如鉬(Mo)、鉭(Ta)、鎢(W)、鋯(Zr)、鈮(Nb)、鈦(Ti)、或其等之化合物的材料。例如,亦可設為包含金屬矽化物或其氧化物、氮化物、碳化物、氮氧化物、碳氮氧化物之材料。作為可用作上述光學膜之材料之金屬矽化物之例,存在矽化鉬及矽化鉭等。又,該等材料可單獨使用1種,亦可組合使用2種以上。Furthermore, when the optical film is the light-shielding
當光學膜為遮光膜22時,較佳為於其表面具備用以抑制光反射率之抗反射層22b者。於該情形時,配置於例如以鉻為主成分之遮光膜22之表面之抗反射層22b可設為鉻化合物(氧化物、氮化物、碳化物等)。抗反射層22b可藉由包含該抗反射層22b之遮光膜22之膜厚方向之組成變化而形成。再者,組成變化可為階段性之變化,亦可為緩慢之變化。抗反射層22b發揮於光罩製造之過程中抑制對於描繪光之反射之功能,又,具有對將光罩曝光時之曝光之光抑制反射之功能,但於下述尺寸測定時亦具有抑制表面反射之作用。抗反射層22b之厚度例如可設為20~40 nm。When the optical film is the light-shielding
再者,如圖2(a)所示,於以下之本第1實施形態之說明中,以使用遮光膜22(於表面具有抗反射層22b)作為光學膜之情形為例。Furthermore, as shown in FIG. 2(a), in the following description of the first embodiment, a case where a light-shielding film 22 (having an
(抗蝕膜) 作為本第1實施形態之光罩之製造方法中使用之光罩基板20,可使用遮光膜22上形成有抗蝕膜23者。可藉由狹縫式塗佈機或旋轉塗佈機等公知之塗佈裝置,將成為抗蝕膜23之原料之抗蝕劑塗佈於遮光膜22上。抗蝕膜23之膜厚較佳為300~1000 nm。(Resist Film) As the
再者,此處,抗蝕膜23係以雷射描繪用之正型光阻進行說明。但,亦可使用負型光阻,進而,於利用電子束進行描繪之情形時,亦可使用電子束用抗蝕劑。In addition, here, the resist
進而,於本第1實施形態之光罩之製造方法中,準備對於抗蝕膜23之描繪用圖案資料。描繪用圖案資料係例如基於需要獲得之轉印用圖案而設計。Furthermore, in the manufacturing method of the photomask of this 1st Embodiment, the pattern data for drawing with respect to the resist
<初期顯影步驟> 如圖2(b)所示,對所準備之光罩基板20之抗蝕膜23,使用描繪用圖案資料進行描繪。作為所用之描繪裝置,例如可使用雷射描繪機。作為雷射光,例如可使用波長413 nm左右之光。<Initial development step> As shown in FIG. 2(b), the resist
繼而,如圖2(c)所示,將抗蝕膜23顯影(初期顯影),藉此形成抗蝕圖案。該抗蝕圖案作為蝕刻遮光膜22時之蝕刻遮罩發揮功能。顯影液可根據抗蝕膜23之組成,選擇適當之顯影液。作為顯影液,例如可使用TMAH(氫氧化四甲基銨)或KOH(氫氧化鉀)水溶液等公知之顯影液。Then, as shown in FIG. 2(c), the resist
<預蝕刻步驟> 如圖2(d)所示,以特定時間進行將抗蝕圖案作為遮罩之對於遮光膜22之預蝕刻。藉此,形成包含遮光膜22之預備圖案。此處,應用濕式蝕刻。<Pre-etching step> As shown in FIG. 2(d), the pre-etching of the light-shielding
蝕刻劑(蝕刻液)可根據光學膜(此處為遮光膜22)之組成,選擇適當之蝕刻劑。例如鉻系之遮光膜之情形時,可使用包含硝酸鈰銨水溶液之蝕刻液。The etchant (etching solution) can be selected according to the composition of the optical film (here, the light-shielding film 22). For example, in the case of a chromium-based light-shielding film, an etching solution containing an aqueous solution of cerium ammonium nitrate can be used.
蝕刻液係首先作用於未被抗蝕圖案覆蓋之部分之遮光膜22表面,藉此,該部分之遮光膜22開始溶出。繼之,伴隨未被抗蝕圖案覆蓋之部分之遮光膜22之溶出,藉由各向同性蝕刻,亦自遮光膜22之側面進行蝕刻(側蝕)。其結果,如圖2(d)所示,預備圖案之邊緣進入較抗蝕圖案之邊緣更靠內側(即,抗蝕圖案之區域內),從而無法自正面側辨識其位置之情況並不少見。The etching solution first acts on the surface of the light-shielding
然而,直至停止蝕刻為止之蝕刻所需時間可根據需要獲得之轉印用圖案之設計而預先求出。該蝕刻所需時間可藉由基於遮光膜22之材料與蝕刻液之組合之蝕刻速率、及遮光膜22之膜厚等而運算。然而,因上述原因,即便應用基於蝕刻速率運算所得之蝕刻時間,亦無法充分地更多滿足所得之轉印用圖案之CD精度。However, the time required for etching until the etching is stopped can be determined in advance according to the design of the transfer pattern to be obtained. The time required for the etching can be calculated by the etching rate based on the combination of the material of the light-shielding
因此,本第1實施形態之預蝕刻係於遮光膜22開始溶出,於厚度方向上將遮光膜22去除之後,以較預先運算所得之蝕刻所需時間更短之蝕刻時間停止預蝕刻。即,於藉由預蝕刻形成之遮光膜22之開口尺寸低於目標尺寸之狀態下結束預蝕刻。例如預蝕刻之時間可設為30~120秒左右。Therefore, in the pre-etching of the first embodiment, the light-shielding
預蝕刻結束時,包含遮光膜22之預備圖案之邊緣之至少一部分如上所述位於較抗蝕圖案之邊緣更靠內側,從而無法自光罩基板20之主表面側視認。At the end of the pre-etching, at least a part of the edge of the preliminary pattern including the
於上述預蝕刻步驟中,與蝕刻液接觸之抗蝕圖案存在其表面變質而形成難溶層24之情形。因此,亦可於下述追加顯影之前,實施藉由臭氧水處理或電漿灰化將難溶層24去除之處理(圖2(e))。In the above-mentioned pre-etching step, the surface of the resist pattern in contact with the etching solution may be deteriorated to form the
<追加顯影步驟> 如圖2(f)所示,對抗蝕圖案進行追加顯影。<Additional development step> As shown in FIG. 2(f), the resist pattern is additionally developed.
於初期顯影之階段,反應因描繪之光能而進行 (感光)之抗蝕膜23藉由顯影而溶出,形成抗蝕圖案,但該抗蝕圖案之邊緣附近受到未達顯影之閾值之不充分之光量之曝光。可認為該不充分之曝光係沿著抗蝕圖案之邊緣以大致固定之寬度產生。因此,可對該抗蝕圖案進而以與初期顯影相同之條件或不同之條件追加進行顯影,使抗蝕圖案之邊緣後退相當於上述尺寸(即,使抗蝕圖案中自正面側觀察時與透明基板21之露出部分相鄰之部分於寬度方向上局部消失)。藉此,可使預備圖案之邊緣自抗蝕圖案之後退後之邊緣露出。再者,圖式中雖不一定示出,但於追加顯影步驟中,抗蝕膜23之膜厚亦與抗蝕圖案之邊緣後退同時地自該正面側減少。亦考慮到該方面,當抗蝕圖案邊緣之後退量(μm)大於0 μm且為0.8 μm以下、較佳為0.05 μm以上0.4 μm以下、進而較佳為0.1 μm以上0.3 μm以下時,抗蝕膜23可充分地保持保護遮光膜22之功能,從而本第1實施形態之效果明顯。可藉由抗蝕圖案邊緣之後退而使位於抗蝕圖案之下之上述預備圖案邊緣部分以大於0 μm且為0.8 μm以下、較佳為0.05 μm以上0.4 μm以下、進而較佳為0.1 μm以上0.3 μm以下之寬度露出。再者,於本說明書中,將光罩之主表面側設為上,將背面側設為下。In the initial development stage, the resist
追加顯影中使用之顯影液係與初期顯影同樣地,例如可使用TMAH(氫氧化四甲基銨)或KOH(氫氧化鉀)水溶液等公知之顯影液。較佳為追加顯影中使用之顯影液具有與初期顯影中使用之顯影液不同之組成及/或濃度。例如,追加顯影時,可應用對於同一抗蝕劑之顯影之速度大於初期顯影中使用之顯影液者。藉此,可將描繪時產生不充分反應之抗蝕圖案之邊緣附近高效率地去除。The developer used in the additional development is the same as the initial development. For example, a known developer such as TMAH (tetramethylammonium hydroxide) or KOH (potassium hydroxide) aqueous solution can be used. It is preferable that the developer used in the additional development has a different composition and/or concentration from the developer used in the initial development. For example, in the case of additional development, the development speed for the same resist is higher than the developer used in the initial development. Thereby, it is possible to efficiently remove the vicinity of the edge of the resist pattern that generates insufficient reaction during drawing.
又,於預蝕刻後之抗蝕圖案之邊緣附近,如圖3(a)所示,因形成預備圖案之遮光膜22之側蝕而於抗蝕圖案與透明基板21之間產生間隙。追加顯影時,顯影液進入該間隙,因此,於抗蝕圖案之邊緣附近(參照圖3(a)所示虛線之圓內),如圖3(a)中之箭頭所例示,抗蝕膜23之顯影不僅自其側面進行,而且亦自與透明基板21對向之面(下側之面)進行。即,抗蝕膜23不僅自該側面溶出,而且亦自與透明基板21對向之面溶出。因此,可有效率地使抗蝕圖案之邊緣後退,使預備圖案之邊緣27露出(圖3(b))。Moreover, near the edge of the pre-etched resist pattern, as shown in FIG. 3(a), a gap is generated between the resist pattern and the
如上所述,抗蝕膜23之膜厚藉由追加顯影而自其正面側減少。可考慮到該情況,預先應用對保護遮光膜22之功能不產生阻礙之抗蝕膜厚。於下述第2實施形態及第3實施形態中亦情況形態。As described above, the film thickness of the resist
<預備圖案之尺寸之測定步驟> 繼而,如圖2(g)所示,檢測預備圖案之邊緣位置。藉此,可測定預備圖案之尺寸。例如,若為線與間隔圖案,則可測定線部之尺寸或間隔部之尺寸(例如,圖2(g)中之CD1)。此處,作為預備圖案之尺寸之一例,測定間隔部、即露出透明基板21之部分之尺寸CD1。<Measurement steps of the size of the preliminary pattern> Then, as shown in Figure 2(g), detect the edge position of the preliminary pattern. With this, the size of the preliminary pattern can be measured. For example, if it is a line and space pattern, the size of the line part or the size of the space part can be measured (for example, CD1 in Fig. 2(g)). Here, as an example of the size of the preliminary pattern, the size CD1 of the partition portion, that is, the portion where the
預備圖案之邊緣之位置例如可藉由自光罩基板20之背面側或主表面側照射檢查光(例如,處於波長400~600 nm之範圍內之光)並檢測透過光或反射光而掌握。The position of the edge of the preparation pattern can be grasped by, for example, irradiating inspection light (for example, light in a wavelength range of 400-600 nm) from the back side or main surface side of the
<追加蝕刻時間之運算> 如上所述,自預備圖案之邊緣之位置測定預備圖案之尺寸CD1。繼之,求出測定所得之預備圖案之尺寸CD1與該部分之設為目標之間隔寬度之尺寸之差值,運算側蝕量(追加蝕刻量)。繼而,基於運算所得之側蝕量,藉由預先求出之蝕刻速率而運算追加蝕刻時間。<Calculation of additional etching time> As described above, the size CD1 of the preliminary pattern is measured from the position of the edge of the preliminary pattern. Next, the difference between the measured size CD1 of the prepared pattern and the size of the target interval width of the part is obtained, and the undercut amount (additional etching amount) is calculated. Then, based on the calculated undercut amount, the additional etching time is calculated by the etching rate obtained in advance.
如此,於本第1實施形態中,不使用抗蝕圖案之尺寸,而使用檢測所得之預備圖案之邊緣位置與需要獲得之轉印用圖案之目標尺寸及蝕刻速率,運算追加蝕刻時間。其結果,可準確地運算所需之追加蝕刻時間。In this way, in the first embodiment, the size of the resist pattern is not used, but the edge position of the prepared pattern obtained by the detection and the target size and etching rate of the transfer pattern to be obtained are used to calculate the additional etching time. As a result, the required additional etching time can be accurately calculated.
<追加蝕刻步驟> 如圖2(h)所示,以如上所述獲得之追加蝕刻時間進行追加蝕刻。藉此,形成包括遮光膜22之確定圖案。追加蝕刻較佳為濕式蝕刻。蝕刻液可為與預蝕刻步驟中使用之蝕刻液相同者。或者,亦可使用組成及濃度之至少一者與預蝕刻步驟中使用之蝕刻液不同者。例如,進行追加蝕刻時,可應用濃度大於或小於預蝕刻使用之蝕刻液者。於追加蝕刻步驟中,較佳為可應用對於同一遮光膜之蝕刻之速度小於預蝕刻步驟中使用之蝕刻液者。例如,可將追加蝕刻中使用之蝕刻液之蝕刻速度設為預蝕刻中使用之蝕刻液之對於同一遮光膜之蝕刻速度之1/6~1/4左右。<Additional etching step> As shown in FIG. 2(h), additional etching is performed with the additional etching time obtained as described above. Thereby, a certain pattern including the
於追加蝕刻步驟中,如圖4所示,存在確定圖案之邊緣部分中之遮光膜22之一部分膜厚自正面側減少而形成膜厚減少部28的情況,但作為光罩之功能中不會產生問題。例如,於遮光膜22具備抗反射層22b之情形時,包括遮光膜22之確定圖案之邊緣部分中之抗反射層22b之一部分自正面側消失,藉此,形成特定寬度之膜厚減少部28。但,該寬度極小,僅為抗反射層22b之微不足道之一部分,因此,該部分中之曝光之光之反射不會阻礙轉印用圖案之轉印性。上述特定寬度例如可大於0 μm且為0.8 μm以下、較佳為0.05 μm以上0.4 μm以下、進而較佳為0.1 μm以上0.3 μm以下。於下述第2實施形態及第3實施形態中亦情況相同。In the additional etching step, as shown in FIG. 4, the film thickness of a part of the light-shielding
又,即便遮光膜22之一部分略微受到損傷,亦可維持其光學性能,因此,無不良情況。所謂光學性能係指對於曝光之光之光學密度(OD)為2以上,較佳為3以上。於下述第2實施形態及第3實施形態中亦情況相同。 又,可能產生上述膜厚減少部28之寬度於光罩面內具有略微之不均之情況,但該方面亦不會對光罩之轉印性產生任何影響。Moreover, even if a part of the light-shielding
<抗蝕圖案之剝離步驟> 如圖2(i)所示,追加蝕刻時間量之追加蝕刻結束後,再次停止蝕刻,將抗蝕圖案剝離。<Resist pattern peeling step> As shown in FIG. 2(i), after the additional etching for the additional etching time is completed, the etching is stopped again, and the resist pattern is peeled.
藉由以上,具備包含透光部30、遮光部35之轉印用圖案之光罩完成(參照圖2(i))。根據本第1實施形態,例如,能夠以透光部30之尺寸CD2與設為目標之間隔寬度之尺寸一致之方式精細緻密地控制尺寸。 再者,於上述第1實施形態中,預備圖案之尺寸(CD1)之測定僅進行1次,但亦可視需要反覆進行預備圖案之尺寸測定及追加蝕刻,且此種態樣亦包含於本發明。With the above, the mask provided with the pattern for transfer including the light-transmitting
如上所述,根據本第1實施形態之光罩之製造方法,可不根據抗蝕圖案之尺寸而根據包括遮光膜22之預備圖案之尺寸求出蝕刻時間。因此,即便成為蝕刻遮罩之抗蝕圖案之形成中存在各種變動,亦能夠使最終形成之轉印用圖案之尺寸準確地與目標值一致。根據本第1實施形態,尤其可極其提昇與透光部30相鄰之遮光部35之尺寸精度。As described above, according to the manufacturing method of the photomask of the first embodiment, the etching time can be calculated based on the size of the preliminary pattern including the light-shielding
進而,根據本發明,可利用追加顯影之類簡易方法精細緻密地掌握預備圖案之尺寸。因此,可一面抑制步驟數及成本之增加,一面使形成之轉印用圖案之CD之中心值高精度地與目標值一致。Furthermore, according to the present invention, the size of the preliminary pattern can be grasped finely and densely by a simple method such as additional development. Therefore, while suppressing the increase in the number of steps and the cost, the center value of the CD of the formed transfer pattern can be made to coincide with the target value with high accuracy.
於上述第1實施形態中,以使用透明基板上形成作為光學膜之單一之膜而成之光罩基板製造光罩的構成為一例進行了說明,但本發明不限於此。 其次,對使用透明基板上形成複數種膜而成之光罩基板製造光罩之情形進行說明。In the above-mentioned first embodiment, the configuration of manufacturing a photomask using a photomask substrate formed by forming a single film as an optical film on a transparent substrate has been described as an example, but the present invention is not limited to this. Next, the case of manufacturing a photomask using a photomask substrate formed by forming a plurality of films on a transparent substrate will be described.
[第2實施形態] 圖5A係以步驟順序例示本發明之第2實施形態之光罩之製造方法(a~j)之概略剖視圖。圖5B係接著圖5A以步驟順序例示第2實施形態之光罩之製造方法(k~s)之概略剖視圖。以下,將圖5A與圖5B統稱為圖5。 於本第2實施形態中,可製造具備包含透光部、半透光部及遮光部之轉印用圖案之多灰階光罩。該轉印用圖案更包含透光部與遮光部相鄰之部分及遮光部與半透光部相鄰之部分。再者,所謂半透光部係指露出形成於透明基板上之下述半透光膜之部分。[Second Embodiment] Fig. 5A is a schematic cross-sectional view illustrating the manufacturing method (a to j) of the mask according to the second embodiment of the present invention in the order of steps. 5B is a schematic cross-sectional view illustrating the manufacturing method (k to s) of the mask of the second embodiment in the order of steps following FIG. 5A. Hereinafter, FIGS. 5A and 5B are collectively referred to as FIG. 5. In this second embodiment, it is possible to manufacture a multi-gray-scale photomask with a transfer pattern including a light-transmitting part, a semi-light-transmitting part, and a light-shielding part. The transfer pattern further includes a part where the light-transmitting part is adjacent to the light-shielding part and a part where the light-shielding part is adjacent to the semi-light-transmitting part. Furthermore, the so-called semi-transmissive part refers to a part that exposes the following semi-transparent film formed on a transparent substrate.
如圖5(a)所示,準備光罩基板20。於本第2實施形態之光罩之製造方法中,作為一例,使用透明基板21上依次積層有半透光膜25、包含遮光層22a及抗反射層22b之遮光膜22以及抗蝕膜23的光罩基板20。本第2實施形態之光罩基板20除了具有半透光膜25以外,且具有與第1實施形態之光罩基板20同樣之構成。As shown in FIG. 5(a), a
(半透光膜) 本第2實施形態中之半透光膜25係與露出透明基板21而成之透光部相比,例如可包括具有使20~80%之光透過之半透光之性質並且具有對於鉻用蝕刻液之耐蝕刻性之材料。該半透光膜25例如亦可包含含有鉬(Mo)及矽(Si)之矽化鉬(MoSi)。半透光膜25較佳為相對於遮光膜22具有蝕刻選擇性。(Semi-transmissive film) The
於本第2實施形態之光罩之製造方法中,自準備光罩之步驟至將抗蝕圖案剝離之步驟為止,只要無特別記載,則與第1實施形態同樣。於圖式中,圖5(a)~圖5(i)對應於圖2(a)~圖2(i)。In the manufacturing method of the photomask of this 2nd Embodiment, from the process of preparing a photomask to the process of peeling a resist pattern, unless there is a special description, it is the same as that of 1st Embodiment. In the drawings, Figures 5(a) to 5(i) correspond to Figures 2(a) to 2(i).
首先,如圖5(a)所示,準備光罩基板20。對抗蝕膜23藉由描繪用圖案資料進行描繪(圖5(b)),且如圖5(c)所示,將抗蝕膜23進行顯影,藉此,形成抗蝕圖案(初期顯影步驟)。初期顯影步驟中使用之描繪用圖案資料係基於需要獲得之轉印用圖案而設計之資料,且例如可為用以形成透光部之對於抗蝕膜23之描繪用圖案資料。First, as shown in FIG. 5(a), a
繼而,如圖5(d)所示,將抗蝕圖案作為遮罩,對遮光膜22以特定時間進行預蝕刻,形成包含遮光膜22之預備圖案(預蝕刻步驟)。再者,於第1實施形態之預蝕刻步驟中,使透明基板21露出,但於本第2實施形態中,使半透光膜25露出。Then, as shown in FIG. 5(d), using the resist pattern as a mask, the light-shielding
於上述預蝕刻步驟中形成有難溶層24之情形時,亦可與第1實施形態同樣地,於下述追加顯影之前,藉由臭氧水處理或電漿灰化而將難溶層24去除(圖5(e))。In the case where the
繼而,如圖5(f)所示,對抗蝕圖案進行追加顯影,使抗蝕圖案之邊緣後退(使抗蝕圖案中自正面側觀察時與半透光膜25之露出部分相鄰之部分於寬度方向上局部消失),藉此,使預備圖案之邊緣露出(追加顯影步驟)。抗蝕圖案邊緣之後退量(μm)及露出之預備圖案之邊緣部分之寬度(μm)分別可設為與第1實施形態中之追加顯影步驟相同。Then, as shown in FIG. 5(f), the resist pattern is additionally developed to retreat the edge of the resist pattern (the part of the resist pattern adjacent to the exposed part of the
進而,如圖5(g)所示,檢測預備圖案之邊緣之位置,藉此,測定預備圖案之尺寸(預備圖案之尺寸之測定步驟)。例如,測定露出半透光膜25之部分之尺寸CD3。Furthermore, as shown in FIG. 5(g), the position of the edge of the preliminary pattern is detected, thereby measuring the size of the preliminary pattern (the step of measuring the size of the preliminary pattern). For example, the size CD3 of the part where the
半透光膜25因使光一部分透過而例如藉由自光罩基板20之背面側或主表面側照射檢查光並檢測透過光,可檢測預備圖案之邊緣。藉此,可測定預備圖案尺寸CD3。可根據該預備圖案尺寸CD3與設為目標之間隔寬度之尺寸之差值,運算追加蝕刻時間(追加蝕刻時間之運算)。Since the
如圖5(h)所示,以所得之追加蝕刻時間進行追加蝕刻,形成包含遮光膜22之確定圖案(追加蝕刻步驟)。於確定圖案之邊緣部分,與第1實施形態同樣地形成特定寬度之膜厚減少部28。As shown in FIG. 5(h), additional etching is performed with the obtained additional etching time to form a definite pattern including the light-shielding film 22 (additional etching step). At the edge portion of the defined pattern, the film
如圖5(i)所示,將抗蝕圖案剝離(抗蝕圖案之剝離步驟)。As shown in Fig. 5(i), the resist pattern is peeled off (the step of peeling off the resist pattern).
<半透光膜之蝕刻> 繼而,如圖5(j)所示,以包含遮光膜22之確定圖案為遮罩,蝕刻半透光膜25。藉此,形成透光部40。於半透光膜25包含矽化鉬(MoSi)之情形時,例如可藉由將氟(F)系之濕式蝕刻液(或蝕刻氣體)供給至半透光膜25而進行蝕刻。以此方式,能夠以透光部40之尺寸CD4與設為目標之間隔寬度之尺寸一致之方式精細緻密地控制尺寸。<Etching of semi-transmissive film> Then, as shown in FIG. 5(j), the
於半透光膜25之蝕刻後,進而重複進行初期顯影步驟、預蝕刻步驟、追加顯影步驟、預備圖案之尺寸之測定步驟、追加蝕刻時間之運算、追加蝕刻步驟、抗蝕圖案之剝離步驟,藉此,可形成半透光部。以下對各步驟詳細敍述。After the etching of the
<初期顯影步驟> 如圖5(k)所示,塗佈新的抗蝕膜26。進而,使用預先準備之描繪用圖案資料,對抗蝕膜26進行描繪(圖5(l)),並進行顯影,藉此,形成抗蝕圖案(圖5(m))。描繪裝置及顯影液可使用與第1實施形態之初期顯影步驟中使用之描繪裝置及顯影液相同者。<Initial development step> As shown in FIG. 5(k), a new resist
上述描繪用圖案資料係基於需要獲得之轉印用圖案而設計之資料,且例如可為用以形成半透光部之對於抗蝕膜26之描繪用圖案資料。The above-mentioned drawing pattern data is data designed based on the required transfer pattern, and may be, for example, drawing pattern data for the resist
<預蝕刻步驟> 繼而,如圖5(n)所示,將抗蝕圖案作為遮罩,以特定時間進行對遮光膜22之預蝕刻。藉此,形成包含遮光膜22之預備圖案。此處,應用濕式蝕刻。蝕刻劑(蝕刻液)中可使用與第1實施形態之預蝕刻步驟中使用之蝕刻劑相同者。又,本第2實施形態中之預蝕刻之終點可與第1實施形態中之預蝕刻步驟同樣地決定。<Pre-etching step> Then, as shown in FIG. 5(n), the resist pattern is used as a mask, and the light-shielding
於預蝕刻步驟中,於與蝕刻液接觸之抗蝕圖案之表面形成有難溶層29之情形時,亦可於其次之追加顯影之前,實施藉由臭氧水處理或電漿灰化將難溶層29去除之處理(圖5(o))。In the pre-etching step, when the
<追加顯影步驟> 如圖5(p)所示,對抗蝕圖案進行追加顯影。藉此,可使抗蝕圖案之邊緣以固定之尺寸後退,使與半透光膜25之露出部分相鄰之預備圖案之邊緣露出。抗蝕圖案邊緣之後退量(μm)及露出之預備圖案之邊緣部分之寬度(μm)分別可設為與第1實施形態中之追加顯影步驟相同。<Additional development step> As shown in FIG. 5(p), the resist pattern is additionally developed. Thereby, the edge of the resist pattern can be retreated at a fixed size, and the edge of the preliminary pattern adjacent to the exposed portion of the
作為追加顯影中使用之顯影液,可使用與第1實施形態之追加顯影中使用之顯影液相同者。再者,本第2實施形態之追加顯影中使用之顯影液較佳為使用具有與本第2實施形態之初期顯影中使用之顯影液不同之組成及/或濃度之顯影液。例如,於追加顯影時,可應用對於同一抗蝕劑之顯影之速度大於初期顯影中使用之顯影液者。藉此,可將描繪時產生不充分之反應之抗蝕圖案之邊緣附近高效率地去除。As the developer used in the additional development, the same developer used in the additional development of the first embodiment can be used. Furthermore, the developer used in the additional development of the second embodiment is preferably a developer having a different composition and/or concentration from the developer used in the initial development of the second embodiment. For example, in the case of additional development, the development speed for the same resist can be applied which is faster than the developer used in the initial development. Thereby, it is possible to efficiently remove the vicinity of the edge of the resist pattern that generates an insufficient response during drawing.
<預備圖案尺寸之測定步驟> 繼而,如圖5(q)所示,檢測與半透光膜25之露出部分相鄰之預備圖案之邊緣之位置。半透光膜25因使光一部分透過,故例如可藉由自光罩基板20之背面側或主表面側照射檢查光且檢測透過光而檢測預備圖案之邊緣之位置。藉此,可測定預備圖案之尺寸。此處,作為預備圖案之尺寸之一例,測定半透光膜25之露出部分之尺寸(圖5(q)中之CD5)。<Measurement steps of the size of the preliminary pattern> Next, as shown in FIG. 5(q), the position of the edge of the preliminary pattern adjacent to the exposed portion of the
<追加蝕刻時間之運算> 如上所述,根據預備圖案之邊緣位置測定預備圖案之尺寸CD5。求出測定所得之預備圖案之尺寸CD5與設為目標之半透光部之尺寸之差值,運算側蝕量(追加蝕刻量)。繼而,基於運算所得之側蝕量,利用預先求出之蝕刻速率運算追加蝕刻時間。<Calculation of additional etching time> As described above, the size CD5 of the preliminary pattern is measured according to the edge position of the preliminary pattern. The difference between the measured size CD5 of the preliminary pattern and the size of the target semi-transmissive part is calculated, and the amount of side etching (additional etching amount) is calculated. Then, based on the calculated undercut amount, an additional etching time is calculated using the previously calculated etching rate.
<追加蝕刻步驟> 如圖5(r)所示,以如上所述地獲得之追加蝕刻時間進行追加蝕刻。藉此,形成包含遮光膜22之確定圖案。於確定圖案之邊緣部分,與第1實施形態同樣地,形成特定寬度之膜厚減少部28。追加蝕刻較佳為濕式蝕刻。蝕刻劑(蝕刻液)可使用與第1實施形態之追加蝕刻相同者。<Additional etching step> As shown in FIG. 5(r), additional etching is performed with the additional etching time obtained as described above. Thereby, a certain pattern including the light-shielding
<抗蝕圖案之剝離步驟> 如圖5(s)所示,追加蝕刻時間量之追加蝕刻結束後,再次停止蝕刻,將抗蝕圖案剝離。以此方式,能夠以半透光部45之尺寸CD6與設為目標之半透光部之尺寸一致之方式精細緻密地控制尺寸。<Resist pattern peeling step> As shown in FIG. 5(s), after the additional etching for the additional etching time is completed, the etching is stopped again, and the resist pattern is peeled. In this way, the size can be finely and densely controlled in such a way that the size CD6 of the semi-transmissive portion 45 coincides with the size of the target semi-transmissive portion.
藉由以上,具備包含透光部40、半透光部45及遮光部50之轉印用圖案之多灰階光罩完成(參照圖5(s))。 於本第2實施形態中,亦可視需要反覆進行預備圖案之尺寸測定及追加蝕刻,且此種態樣亦包含於本發明。 再者,於本第2實施形態中,作為一例,對形成透光部40(圖5(j))之後,塗佈新的抗蝕膜26,重複進行光微影,形成半透光部45之構成進行了說明,但不限於此。例如,形成半透光部45之後形成透光部40之構成亦包含於本第2實施形態。With the above, a multi-gray-scale photomask with a transfer pattern including the light-transmitting
於本第2實施形態中,亦可獲得與第1實施形態同樣之效果。本第2實施形態之多灰階光罩係尤其與透光部40或半透光部45相鄰之遮光部50、及與遮光部50相鄰之半透光部45之尺寸精度變得極高。In this second embodiment, the same effects as in the first embodiment can also be obtained. In the multi-gray mask of the second embodiment, in particular, the dimensional accuracy of the light-shielding
[第3實施形態] 繼而,一面參照圖6,一面對本發明之第3實施形態進行說明。圖6係以步驟順序例示第3實施形態之光罩之製造方法之概略剖視圖。本第3實施形態之光罩之製造方法係於第1實施形態中之追加顯影之前,具有自光罩基板20之背面側照射光,使未被遮光膜22遮光之部分之抗蝕圖案感光的步驟(追加曝光步驟)。[Third Embodiment] Next, referring to Fig. 6, the third embodiment of the present invention will be described. Fig. 6 is a schematic cross-sectional view illustrating the manufacturing method of the mask of the third embodiment in the order of steps. The manufacturing method of the photomask of the third embodiment is that before the additional development in the first embodiment, light is irradiated from the back side of the
如圖6(a)所示,準備光罩基板20。本第3實施形態之光罩基板20可具有與第1實施形態之光罩基板20同樣之構成。 本第3實施形態之光罩之製造方法係除了於第1實施形態之追加顯影步驟(圖2(f))之前具有追加曝光步驟之方面以外,與第1實施形態形態。於圖式中,圖6(a)~圖6(e)對應於圖2(a)~圖2(e)。因此,對追加曝光步驟以後之流程(圖6(f)以後)進行說明。As shown in FIG. 6(a), a
<追加曝光步驟> 形成預備圖案,並視需要將抗蝕膜23之難溶層24去除之後(圖6(e)),如圖6(f)所示,自光罩基板20之背面側照射光,將未被遮光膜22遮光之部分之抗蝕圖案曝光。未被遮光膜22遮光之部分係指抗蝕圖案中能夠自光罩基板20之背面側視認之部分、或者抗蝕圖案中相較與透明基板21之露出部分相鄰之預備圖案之邊緣更朝透明基板21之露出部分側突出的部分。作為追加曝光步驟中之曝光之光,例如可使用波長413 nm左右之光。<Additional exposure step> After forming a preliminary pattern and removing the
<追加顯影> 如圖6(g)所示,對抗蝕圖案進行追加顯影,使抗蝕圖案之邊緣以固定之尺寸後退。藉此,可使與透明基板21之露出部分相鄰之預備圖案之邊緣露出。抗蝕圖案邊緣之後退量(μm)及露出之預備圖案邊緣部分之寬度(μm)分別可設為與第1實施形態中之追加顯影步驟相同。<Additional development> As shown in Figure 6(g), perform additional development on the resist pattern so that the edges of the resist pattern recede by a fixed size. Thereby, the edge of the preliminary pattern adjacent to the exposed portion of the
追加顯影中使用之顯影液可使用與第1實施形態之追加顯影中使用之顯影液相同者。於本第3實施形態中,對抗蝕圖案進行追加曝光,因此,可將自正面觀察時與透明基板21之露出部分相鄰之抗蝕圖案之邊緣附近更高效率地去除。The developer used in the additional development can be the same as the developer used in the additional development of the first embodiment. In the third embodiment, the resist pattern is additionally exposed. Therefore, the edge vicinity of the resist pattern adjacent to the exposed portion of the
<預備圖案之尺寸之測定步驟> 繼而,如圖6(h)所示,檢測預備圖案之邊緣之位置。藉此,可測定預備圖案之尺寸。例如,若為線與間隔圖案,則可測定線部之尺寸、或間隔部之尺寸(例如,圖6(h)中之CD7)。此處,作為預備圖案之尺寸之一例,測定間隔部、即露出透明基板21之部分之尺寸CD7。可根據該預備圖案尺寸CD7與設為目標之間隔寬度之尺寸之差值,運算追加蝕刻時間。 預備圖案之邊緣之位置可利用與第1實施形態同樣之方法掌握。<Measurement steps of the size of the preliminary pattern> Then, as shown in Figure 6(h), detect the position of the edge of the preliminary pattern. With this, the size of the preliminary pattern can be measured. For example, if it is a line and space pattern, the size of the line part or the size of the space part can be measured (for example, CD7 in Fig. 6(h)). Here, as an example of the size of the preliminary pattern, the size CD7 of the partition portion, that is, the portion where the
<追加蝕刻時間之運算> 如上所述,根據預備圖案之邊緣之位置,測定預備圖案之尺寸CD7。繼而,求出測定所得之預備圖案之尺寸CD7與該部分之設為目標之間隔寬度之尺寸之差值,運算側蝕量(追加蝕刻量)。繼之,基於運算所得之側蝕量,利用預先求出之蝕刻速率,運算追加蝕刻時間。<Calculation of additional etching time> As described above, the size CD7 of the preliminary pattern is measured according to the position of the edge of the preliminary pattern. Then, the difference between the measured size CD7 of the prepared pattern and the size of the target interval width of the part is obtained, and the undercut amount (additional etching amount) is calculated. Then, based on the calculated undercut amount, the additional etching time is calculated using the etching rate obtained in advance.
如此,於本第3實施形態中,不使用抗蝕圖案之尺寸而使用檢測所得之預備圖案之邊緣位置與需要獲得之轉印用圖案之目標尺寸及蝕刻速率,運算追加蝕刻時間。其結果,可準確地運算所需之追加蝕刻時間。In this way, in the third embodiment, the size of the resist pattern is not used, but the edge position of the prepared pattern obtained by the detection and the target size and etching rate of the transfer pattern to be obtained are used to calculate the additional etching time. As a result, the required additional etching time can be accurately calculated.
<追加蝕刻> 如圖6(i)所示,以如上所述地獲得之追加蝕刻時間進行追加蝕刻。藉此,形成包含遮光膜22之確定圖案。於確定圖案之邊緣部分,與第1實施形態同樣地,形成特定寬度之膜厚減少部28。追加蝕刻較佳為濕式蝕刻。蝕刻劑(蝕刻液)可使用與第1實施形態相同者。<Additional Etching> As shown in FIG. 6(i), additional etching is performed with the additional etching time obtained as described above. Thereby, a certain pattern including the light-shielding
<抗蝕圖案之剝離> 繼而,如圖6(j)所示,追加蝕刻時間量之追加蝕刻結束後,再次停止蝕刻,將抗蝕圖案剝離。<Peeling of the resist pattern> Then, as shown in FIG. 6(j), after the additional etching for the additional etching time is completed, the etching is stopped again, and the resist pattern is peeled off.
藉由以上,具備包含透光部55、遮光部60之轉印用圖案之光罩完成(參照圖6(j))。根據本第3實施形態,例如能夠以透光部55之尺寸CD8與設為目標之間隔寬度之尺寸一致之方式精細緻密地控制尺寸。 再者,於上述態樣中,預備圖案之尺寸測定僅進行1次,但亦可視需要反覆進行預備圖案之尺寸測定及追加蝕刻,且此種態樣亦包含於本發明。With the above, the mask provided with the pattern for transfer including the light-transmitting
於本第3實施形態中,以使用透明基板上形成單一之膜作為光學膜之光罩基板製造光罩的構成為一例進行了說明,但本發明不限於此。根據本第3實施形態,例如可如第2實施形態般,藉由使用半透光膜25、遮光膜22及抗蝕膜23(26)依次積層而成之光罩基板20,而製造具備包含透光部、半透光部及遮光部之轉印用圖案之多灰階光罩。亦於該情形時,於追加顯影之前實施本第3實施形態之追加曝光步驟即可。於本第3實施形態中,亦可獲得與第1實施形態同樣之效果。In the third embodiment of the present invention, a configuration of manufacturing a mask using a mask substrate in which a single film is formed on a transparent substrate as an optical film has been described as an example, but the present invention is not limited to this. According to the third embodiment, for example, as in the second embodiment, a
本發明之製造方法之光罩之用途無特別限制。本發明之製造方法之光罩尤其可有利地用作顯示裝置製造用之光罩。例如,本發明之製造方法之光罩可有利地用於顯示裝置中使用之各層(例如,TFT陣列之源極/汲極層、像素層或彩色濾光片之感光性間隔材層等CD精度尤其重要之層)之形成。The use of the photomask of the manufacturing method of the present invention is not particularly limited. The photomask of the manufacturing method of the present invention can be advantageously used as a photomask for manufacturing display devices. For example, the photomask of the manufacturing method of the present invention can be advantageously used in various layers used in display devices (for example, the source/drain layer of a TFT array, the pixel layer or the photosensitive spacer layer of a color filter, etc.). Especially important layer) formation.
本發明包含使用上述本發明之製造方法之光罩之顯示裝置之製造方法。例如,本發明之顯示裝置之製造方法可包含如下步驟:準備利用上述本發明之第1實施形態、第2實施形態或第3實施形態之製造方法製造之光罩;及使用曝光裝置,將上述光罩進行曝光,將上述轉印用圖案轉印至被轉印體。藉由本發明之顯示裝置之製造方法,可使用能夠進行精細緻密之圖案尺寸精度之控制之光罩,製造顯示裝置,因此,可應用於更微細之設計下之顯示裝置之製造,又,可有助於生產效率或良率之提昇。The present invention includes a manufacturing method of a display device using the photomask of the above-mentioned manufacturing method of the present invention. For example, the manufacturing method of the display device of the present invention may include the steps of: preparing a photomask manufactured by the manufacturing method of the first embodiment, the second embodiment, or the third embodiment of the present invention; and using an exposure device to The photomask is exposed, and the transfer pattern is transferred to the transfer target body. According to the manufacturing method of the display device of the present invention, the display device can be manufactured using a mask that can control the precision of fine and dense pattern size. Therefore, it can be applied to the manufacture of display devices under a finer design. Contribute to the improvement of production efficiency or yield.
本發明之光罩例如於製造顯示裝置時,轉印用圖案具有之線寬為0.8~100 μm左右,且於將0.8~30 μm之部分設為尺寸測定之對象之光罩之情形時,本發明之光罩之製造方法之效果尤其明顯。 因此,作為將利用本發明之製造方法製造之光罩具備之轉印用圖案轉印至被轉印體時使用之曝光機,可設為作為所謂LCD(Liquid Crystal Display,液晶顯示器)用或FPD(Flat Panel Display,平板顯示器)用等顯示裝置用曝光裝置的等倍之投影曝光裝置或接近式曝光裝置。 此時,曝光之光係取決於光罩曝光時使用之曝光裝置之光源者,可使用i線、h線或g線等單一波長之光、或包含特定之波長區域(例如365~436 nm或300~365 nm等)之光。 作為上述曝光裝置之光學系統,於投影曝光裝置之情形時,可較佳地使用NA(數值孔徑)為0.08~0.15且相干因素(σ)之值為0.5~0.9之範圍者。For example, when the photomask of the present invention is used to manufacture a display device, the transfer pattern has a line width of about 0.8-100 μm, and when the portion of 0.8-30 μm is used as the mask for the size measurement, this The effect of the invented photomask manufacturing method is particularly obvious. Therefore, as an exposure machine used to transfer the transfer pattern of the photomask manufactured by the manufacturing method of the present invention to the transfer object, it can be used as a so-called LCD (Liquid Crystal Display) or FPD (Flat Panel Display) is a projection exposure device or proximity exposure device with the same magnification as the exposure device for display devices. At this time, the light for exposure depends on the light source of the exposure device used in the mask exposure. Single wavelength light such as i-line, h-line or g-line can be used, or a specific wavelength region (such as 365-436 nm or 300~365 nm etc.) light. As the optical system of the above-mentioned exposure device, in the case of the projection exposure device, a NA (numerical aperture) of 0.08 to 0.15 and a value of the coherence factor (σ) in the range of 0.5 to 0.9 can be preferably used.
本發明之光罩製造方法例如可於將光學膜作為遮光膜製造二元光罩時較佳地應用。 又,本發明之光罩製造方法亦可應用於形成轉印用圖案中包含透光部、遮光部以及使用半透光膜之半透光部之多灰階光罩。於該情形時,藉由使用使曝光之光不相位反轉(相移量為90度以下)地局部透過(透過率例如為20~60%)之膜作為半透光膜而製成半透光部。所形成之轉印用圖案可於被轉印體上形成具有階差之立體形狀之抗蝕圖案,從而可實現顯示裝置等之製造之效率化。The photomask manufacturing method of the present invention can be preferably applied, for example, when an optical film is used as a light shielding film to manufacture a binary photomask. In addition, the method for manufacturing a photomask of the present invention can also be applied to form a multi-gray-level photomask including a light-transmitting portion, a light-shielding portion, and a translucent portion using a translucent film in the transfer pattern. In this case, a semi-transparent film is made by using a film that partially transmits (transmittance, for example, 20-60%) without phase inversion of the exposed light (phase shift is 90 degrees or less) as a semi-transparent film Guangbe. The formed transfer pattern can form a resist pattern with a stepped three-dimensional shape on the transferred body, so that the efficiency of the manufacture of display devices and the like can be realized.
就第1~第3實施形態具體地說明了本發明,但本發明之技術範圍不限於上述實施形態,且可於不脫離其主旨之範圍內進行各種變更。The present invention has been specifically explained with respect to the first to third embodiments, but the technical scope of the present invention is not limited to the above-mentioned embodiments, and various changes can be made without departing from the spirit thereof.
20:光罩基板21:透明基板22:遮光膜22a:遮光層22b:抗反射層23:抗蝕膜24:難溶層25:半透光膜26:抗蝕膜27:預備圖案之邊緣28:膜厚減少部29:難溶層30:透光部35:遮光部40:透光部45:半透光部50:遮光部55:透光部60:遮光部
CD1:尺寸
CD2:尺寸
CD3:尺寸
CD4:尺寸
CD5:尺寸
CD6:尺寸
CD7:尺寸
CD8:尺寸20: Mask substrate 21: Transparent substrate 22: Light-shielding film 22a: Light-
圖1係將抗蝕圖案作為蝕刻遮罩之濕式蝕刻後之光學膜圖案(遮光膜圖案)之剖面形狀之SEM照片之一例。 圖2(a)~(i)係以步驟順序例示本發明之第1實施形態之光罩之製造方法之概略剖視圖。 圖3(a)、(b)係例示本發明之實施形態之抗蝕圖案之邊緣附近之追加顯影時之情況的概略剖視圖。 圖4係例示本發明之實施形態之光罩之膜厚減少部之概略剖視圖。 圖5A係以步驟順序例示本發明之第2實施形態之光罩之製造方法(a~j)之概略剖視圖。 圖5B係以步驟順序例示本發明之第2實施形態之光罩之製造方法(k~s)之概略剖視圖。 圖6(a)~(j)係以步驟順序例示本發明之第3實施形態之光罩之製造方法之概略剖視圖。FIG. 1 is an example of an SEM photograph of the cross-sectional shape of an optical film pattern (light-shielding film pattern) after wet etching with a resist pattern as an etching mask. 2(a) to (i) are schematic cross-sectional views illustrating the manufacturing method of the photomask according to the first embodiment of the present invention in the order of steps. Figures 3(a) and (b) are schematic cross-sectional views illustrating an additional development near the edge of the resist pattern of the embodiment of the present invention. Fig. 4 is a schematic cross-sectional view illustrating the film thickness reduction portion of the mask according to the embodiment of the present invention. FIG. 5A is a schematic cross-sectional view illustrating the manufacturing method (a to j) of the photomask according to the second embodiment of the present invention in the order of steps. 5B is a schematic cross-sectional view illustrating the manufacturing method (k to s) of the photomask according to the second embodiment of the present invention in the order of steps. 6(a) to (j) are schematic cross-sectional views illustrating the manufacturing method of the mask according to the third embodiment of the present invention in the order of steps.
20:光罩基板 20: Mask substrate
21:透明基板 21: Transparent substrate
22:遮光膜 22: Shading film
22a:遮光層 22a: shading layer
22b:抗反射層 22b: Anti-reflective layer
23:抗蝕膜 23: resist film
24:難溶層 24: Insoluble layer
30:透光部 30: Translucent part
35:遮光部 35: Shading part
CD1:尺寸 CD1: size
CD2:尺寸 CD2: size
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