KR20170010032A - Method of manufacturing a photomask, photomask, pattern transfer method and method of manufacturing a display device - Google Patents

Abstract

The present invention relates to a method of manufacturing a photomask having a fine transfer pattern with high precision. The method comprises: a process for preparing a photomask blank having an underlayer film, a middle layer film, an upper layer film and a photoresist layer formed on a transparent substrate; a process for writing on the photoresist layer and pre-developing the same to form a first resist pattern; a pre-etching process for etching the upper layer film by using the first resist pattern as a mask, and etching the middle layer film by using the first resist pattern or the etched upper layer film as a mask; a process for performing additional development on the first resist pattern to form a second resist pattern; and an etching process for using the second resist pattern as a mask to perform an additional etch on the upper layer film, and using the etched middle layer film as a mask to etch the underlayer film.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photomask manufacturing method, a photomask, a pattern transfer method, and a manufacturing method of a display device,

The present invention relates to a photomask manufacturing method, a photomask, a pattern transfer method using the photomask, and a manufacturing method of a display device used for pattern transfer to a transfer target body.

BACKGROUND ART [0002] In the manufacture of a display device typified by a liquid crystal display device, there is a demand to improve image quality and operation performance by forming a finer pattern.

Patent Document 1 discloses a phase shift mask in which a light-shielding film is patterned to form a phase shift layer having a thickness of 180 degrees with respect to an i-line so as to cover a light-shielding film, whereby a fine, So that pattern formation becomes possible.

Patent Document 2 discloses an upper layer film preliminary etching step of preparing a photomask blank in which a lower layer film and an upper layer film are laminated on a transparent substrate and using the resist pattern formed on the upper layer film as a mask to etch the upper layer film, A lower layer film patterning step of forming a lower layer film pattern by etching the lower layer film using the film as a mask, and an upper layer film patterning step of side-etching the upper layer film by using at least the resist pattern as a mask, Is disclosed.

Japanese Patent Application Laid-Open No. 11-13283 Japanese Patent Application Laid-Open No. 2013-134435

At present, VA (Vertical Alignment) method or IPS (In Plane Switching) method is adopted for a liquid crystal display device. With these applications, improvement in display performance such as high precision, high-speed display, and wide viewing angle has been demanded while being bright and saving power.

For example, in a liquid crystal display device to which this method is applied, a transparent conductive film formed in a line-and-space (L / S) pattern shape is applied to the pixel electrode and in order to improve the display performance of the display device, Minification is being requested. For example, it is desired to narrow the pitch width P (the sum of the line width L and the space width S) of the line and space pattern from 6 탆 to 5 탆 and further from 5 탆 to 4 탆. In this case, at least one of the line width L and the space width S is often less than 3 mu m. For example, it is often the case that L < 3 mu m, or L &amp;le; 2 mu m, or S &lt;

In the case of a thin film transistor ("TFT") used in a liquid crystal display device or an EL (electroluminescence) display device, among the plurality of patterns constituting the TFT, a contact hole formed in the passivation layer , And a configuration is adopted in which the insulating layer penetrates through and connects to the connection portion on the lower layer side. At this time, if the patterns of the upper layer side and the lower layer side are accurately positioned and the shape of the contact hole is not reliably formed, the correct operation of the display device is not guaranteed. Also here, with the improvement of the display performance, high integration of the device pattern is required, and the pattern is required to be miniaturized. That is, the diameter of the hole pattern needs to be less than 3 탆. For example, it is considered that a hole pattern having a diameter of 2.5 占 퐉 or less, furthermore, a diameter of 2.0 占 퐉 or less is required, and a pattern having a diameter of 1.5 占 퐉 or less which is lower than this is desired in the near future.

From such a background, there is an increasing demand for a photomask for manufacturing a display device capable of coping with the miniaturization of line-and-space patterns and contact holes.

However, in the field of photomasks for manufacturing semiconductors (LSIs, etc.), in order to obtain resolution, a process of developing a phase shift mask using a phase shift action together with an optical system of a high NA (Numerical Aperture) . The phase shift mask is used together with a light source (such as KrF or ArF excimer laser) having a single wavelength and a short wavelength. As a result, high integration of various devices and the like and accompanying patterning of the photomask have been made possible.

On the other hand, in the field of lithography for manufacturing display devices, it has not been general that the above-described method is applied to improve the resolution or the depth of focus. For this reason, it can be said that the degree of integration and fineness of the pattern, which is required for the display device, is not as much as the field of semiconductor manufacturing. Actually, an optical system and a light source mounted on an exposure apparatus for producing a display device (generally known as an LCD exposure apparatus or a liquid crystal exposure apparatus) are also different from those used for semiconductor manufacturing in terms of production efficiency , Increasing the wavelength range of the light source to obtain a large amount of irradiated light, shortening the production tact, etc.).

When the transfer pattern of the photomask is made finer, it is difficult to carry out the step of accurately transferring the transferred pattern to a transfer target body (thin film to be etched, also referred to as a &quot; processed body &quot;). Although the resolution limit of the above-described exposure apparatus, which is practically used in the process of transfer in the manufacture of the display device, is about 3 mu m, among the transfer patterns necessary for the display device, It is necessary to have a dimension close to or below this value.

In addition, since the mask for manufacturing a display device has a larger area than a mask for manufacturing a semiconductor, there is a great difficulty in uniformly transferring a transfer pattern having a CD of less than 3 mu m in the plane in actual production.

In the case of using a mask for producing a display device as described above, it is difficult to transfer a fine pattern of CD of less than 3 mu m. Therefore, various methods for improving the resolution, which have been developed for the purpose of semiconductor device manufacturing so far, It is also considered to be applied to the field.

However, there are several problems in applying the above-described method directly to the manufacture of display devices. For example, a large investment is required for switching to a high-resolution exposure apparatus having a high NA (numerical aperture). However, since it is difficult to raise the price of a display device, have. In addition to the problem that it is difficult to apply to a display device having a relatively large area or a manufacturing tact is liable to be prolonged, the change of the exposure wavelength (using a single wavelength such as an ArF excimer laser as a single wavelength) It is not suitable for what you need.

Therefore, it is very significant if the transferability of the fine pattern can be improved by designing the transfer pattern provided in the photomask for manufacturing a display device.

However, it is not easy to miniaturize the wiring pattern of the FPD (Flat Panel Display) and obtain the line width (CD) precision by simply miniaturizing the transfer pattern of the photomask.

In the method of manufacturing a phase shift mask described in Patent Document 1, a light shielding layer on a transparent substrate is patterned, a phase shift layer is formed on a transparent substrate so as to cover the light shielding layer, and the phase shift layer is patterned. The manufacturing process disclosed in Patent Document 1 is shown in Fig.

First, a light shielding layer 11 is formed on the transparent substrate 10 (Fig. 1A), and then a photoresist layer 12 is formed on the light shielding layer 11 (Fig. 1B) .

Subsequently, the photoresist layer 12 is exposed and developed to form a resist pattern 12P1 on the light-shielding layer 11 (Fig. 1C).

The resist pattern 12P1 is used as an etching mask, and the light shielding layer 11 is etched in a predetermined pattern shape. Thus, a light-shielding layer pattern 11P1 patterned in a predetermined shape is formed on the transparent substrate 10 (Fig. 1 (D)). After the resist pattern 12P1 is removed (FIG. 1E), the phase shift layer 13 is formed. The phase shift layer 13 is formed so as to cover the light shielding layer pattern 11P1 on the transparent substrate 10 (Fig. 1 (F)).

Subsequently, a photoresist layer 14 is formed on the phase shift layer 13 (FIG. 1 (G)). Subsequently, the photoresist layer 14 is exposed and developed to form a resist pattern 14P1 on the phase shift layer 13 (FIG. 1 (H)). The resist pattern 14P1 is used as an etching mask, and the phase shift layer 13 is etched to have a predetermined pattern shape. Thereby, a phase shift layer pattern 13P1 patterned in a predetermined shape is formed on the transparent substrate 10 ((I) of Fig. 1).

After the formation of the phase shift layer pattern 13P1, the resist pattern 14P1 is removed (Fig. 1 (J)). As described above, the phase shift mask 1 in which the phase shift layer pattern 13P1 is formed around the light shielding layer pattern 11P1 is produced.

However, according to the examination by the present inventors, when a photomask of high precision is to be manufactured by this method, the following problems may arise. 1C) and the exposure of the photoresist layer 14 (that is, between the second imaging process (FIG. 1 (H)) and the exposure of the photoresist layer 12 It is impossible to make the misalignment of the light-shielding layer pattern 11P1 and the phase-shifting layer pattern 13P1 zero. In this case, misalignment may occur between the light-blocking layer pattern 11P1 and the phase-shift layer pattern 13P1.

2 is a partial enlarged view of the phase shift mask 1 shown in FIG. 1 (J) (an enlarged view of a portion surrounded by a circle in a dotted line). When the above-described misalignment occurs, the dimension A and the dimension B shown in Fig. 2 become different from each other. That is, in the line width direction, the function of the phase shift layer becomes asymmetric. In some cases, in this pattern, a phase shift effect appears strongly on one side in the line width direction and a transfer image (light intensity distribution due to light transmitted through the photomask) in which the phase shift effect hardly appears on the other side, May occur in some cases. When a display device is manufactured using a photomask having such a transfer pattern, the control of the line width is lost, and a circuit pattern with high precision can not be obtained.

Generally, a photomask for FPD is manufactured by FPD or a drawing apparatus manufactured for manufacturing a display device, and mainly uses a laser as a drawing light source. However, in such an image drawing apparatus, it is impossible to set the shift component from the abnormal coordinates occurring during one painting operation step to zero. As a result, it has been clarified by the inventors of the present invention that there is a risk that a deviation of a deviation component from an abnormal coordinate appearing during one rendering operation by a superimposition by a plurality of drawing operations causes a maximum of about ± 0.5 μm.

Of course, in a photomask manufactured through a plurality of photolithography processes, it is possible to make an effort to exclude the maximum deviation by performing patterning a plurality of times with reference to a common alignment mark or the like. However, as described above, it is not always easy to make the misalignment be 0.5 mu m or less. This variation in line width due to misalignment is very serious in a pattern with a fine line width (for example, 1.0 탆 or less), and a situation in which a line having a line width of 0.5 탆 or less can not be stably formed.

On the other hand, a photomask requiring a fine CD precision due to the above-mentioned reason has become increasingly demanded, and has been attracting attention from now on.

Patent Document 2 proposes a method of forming two film patterns by using a resist pattern drawn by a single drawing process as a method for solving the above problems. The process of Patent Document 2 is shown in Fig.

According to the method of Patent Document 2, it is possible to make the shift component by the photolithography process a plurality of times substantially zero. However, since etching selectivity is required between the upper layer film and the lower layer film, there is a certain limitation in selection of the film material. That is, the material of the lower layer film in Patent Document 2 needs to have resistance to the etchant of the upper layer film, and the material of the upper layer film is desired to have resistance to the etchant of the lower layer film. The present inventors have paid attention to the fact that a film material for forming two film patterns can be selected more freely without restriction of etching selectivity and further a photomask with excellent transfer characteristics can be obtained, .

SUMMARY OF THE INVENTION In view of the above circumstances, it is an object of the present invention to provide a photomask having a fine and high-precision transfer pattern, a method of manufacturing the same, a pattern transfer method using a photomask, and a method of manufacturing the display apparatus.

In order to solve the above-described problems, the present invention has the following configuration.

(Configuration 1)

A manufacturing method of a photomask provided with a transfer pattern on a transparent substrate,

A step of laminating a lower layer film, an intermediate film and an upper layer film on the transparent substrate and preparing a photomask blank on which a photoresist film is formed,

A step of forming a first resist pattern by performing drawing and preliminary development on the photoresist film;

Etching the upper film using the first resist pattern as a mask and using the first resist pattern or the upper film as an etching mask to etch the interlayer,

Forming a second resist pattern by subjecting the first resist pattern to further development;

Etching the lower layer film using the etched intermediate layer as a mask while performing the additional etching on the upper layer film using the second resist pattern as a mask,

Wherein the photomask further comprises a photoresist.

(Composition 2)

Wherein the underlayer film includes a material which is etched by an etchant of the upper layer film,

Wherein the interlayer comprises a material having an etching resistance to the etching agent of the upper layer film,

The method of manufacturing a photomask according to Claim 1, wherein in the post-etching step, additional etching of the upper layer film and etching of the lower layer film proceed simultaneously.

(Composition 3)

The method of manufacturing a photomask according to the above configuration 1 or 2, further comprising a step of etching away the intermediate film of the portion where the surface is exposed after the subsequent etching.

(Composition 4)

The underlayer film is a semi-light-transmitting film partially transmitting exposure light used for exposure of the photomask, and the upper layer film is a light-shielding film shielding the exposure light. Gt;

(Composition 5)

Wherein the transfer pattern

A transparent portion having a surface of the transparent substrate exposed,

A light shielding portion having at least a light shielding film formed on the transparent substrate,

And a semi-transmissive portion formed adjacent to the edge of the light-shielding portion and having a predetermined width while partially transmitting the exposure light by forming at least the semitransparent film on the transparent substrate,

The method of manufacturing a photomask according to Claim 4,

(Composition 6)

The semi-light-transmitting film has a transmittance of 1 to 30% with respect to a representative wavelength included in exposure light used for exposure of the photomask, and a phase shift amount with respect to light of the representative wavelength is 120 to 240 ° Is formed on the entire surface of the photomask.

(Composition 7)

Wherein the translucent film has a transmittance of 1 to 60% with respect to a representative wavelength included in exposure light used for exposure of the photomask, and a phase shift amount with respect to light of the representative wavelength is 90 DEG or less. The method of manufacturing a photomask according to Structure 5 above.

(Composition 8)

A photomask for manufacturing a display device, wherein a transfer pattern including a light-shielding portion, a light-projecting portion, and a translucent portion is formed on a transparent substrate,

Wherein the transparent portion is formed by exposing a surface of the transparent substrate,

Wherein the shielding portion is formed by stacking a lower layer film, an intermediate film, and an upper layer film on the transparent substrate in this order from the transparent substrate side,

Wherein the translucent portion has a lower layer film formed on the transparent substrate or a portion of a predetermined width D (占 퐉) formed adjacent to an edge of the light-shielding portion while being laminated with a lower layer film and an intermediate film, &Lt; / = 1.0. &Lt; / RTI &gt;

(Composition 9)

The lower layer film is a semi-light-transmitting film that partially transmits exposure light used for exposure of the photomask,

Wherein the upper layer film is a light-shielding film for shielding the exposure light,

The photomask for manufacturing a display device according to the above Configuration 8, wherein the interlayer includes a material having etching resistance to the etching agent of the upper layer film.

(Configuration 10)

When the difference between D1 and D2 is 0.1 or less when the widths of two semi-light-transmitting portions adjacent to two opposing edges of an arbitrary light-shielding portion in the transfer pattern are D1 (占 퐉) and D2 (占 퐉) Wherein the photomask is a photomask.

(Configuration 11)

The photomask for manufacturing the display device according to the above Structure 8, wherein the underlayer film includes a material which is etched by an etchant of the upper layer film.

(Configuration 12)

Wherein the semi-light-transmitting portion has a transmittance of 1 to 30% with respect to a representative wavelength included in exposure light used for exposure of the photomask, And the amount of phase shift relative to the light of the wavelength is 150 to 210 DEG.

(Composition 13)

Wherein the semi-light-transmitting portion has a transmittance of 2 to 60% with respect to a representative wavelength included in exposure light used for exposure of the photomask, Wherein the phase shift amount with respect to the light of the wavelength is 90 DEG or less.

(Composition 14)

A step of preparing the photomask according to any one of Structures 8 to 13,

And transferring the transfer pattern onto a transfer target body using an exposure apparatus.

(Composition 15)

A step of preparing the photomask according to any one of Structures 8 to 13,

And transferring the transfer pattern onto a transfer target body using an exposure apparatus.

According to the present invention, it is possible to provide a photomask having a fine and high-precision transfer pattern, a method of manufacturing the same, a pattern transfer method using a photomask, and a method of manufacturing a display device.

FIG. 1 is a cross-sectional view of a conventional photomask manufacturing method 1
Fig. 2 is a partial enlarged view of Fig. 1 (J)
FIG. 3 is a cross-sectional view of a conventional photomask manufacturing method 2
FIG. 4 is a view showing a method of manufacturing a photomask according to the present invention
5 is a view showing a method of manufacturing a photomask of the present invention
6 is a view showing a transfer pattern (line and space pattern) of the photomask of the present invention,
FIG. 7 is a view showing a transfer pattern (hole pattern) of the photomask of the present invention,
FIG. 8 is a graph showing the relationship between the transfer pattern (line and space pattern)
FIG. 9 is a view showing a transfer pattern (hole pattern)
10 is a schematic view of a photomask (first photomask)
11 is a schematic view showing a photomask (second photomask)
12 is a cross-
13 is a view showing a transfer pattern (line and space pattern) of the phase shift mask of the present invention,
FIG. 14 is a graph showing the distribution of the light intensity distribution of transmitted light by the transfer pattern of FIG.
Fig. 15 is a graph showing the transfer pattern (line and space pattern) of the transmission auxiliary photomask of the present invention,

The photomask of the present invention has a transfer pattern on a transparent substrate. The transfer pattern may include the light shielding portion 102, the transparent portion 103, and the translucent portions 101a and 101b, as shown in Figs. 6 and 7, for example. 10 and 11 illustrate cross sections of the photomask 100 of the present invention.

That is, as a photomask for manufacturing a display device in which a transfer pattern including a light-shielding portion, a light-projecting portion, and a translucent portion is formed on a transparent substrate,

Wherein the transparent portion is formed by exposing a surface of the transparent substrate,

Wherein the shielding portion is formed by stacking a lower layer film, an intermediate film, and an upper layer film on the transparent substrate in this order from the transparent substrate side,

The semi-transparent portion has a lower layer film formed on the transparent substrate or a portion of a predetermined width D (占 퐉) formed adjacent to an edge of the light-shielding portion while being laminated with a lower layer film and an intermediate film.

Preferably,

The lower layer film is a semi-light-transmitting film that partially transmits exposure light used for exposure of the photomask,

Wherein the upper layer film is a light-shielding film for shielding the exposure light,

The interlayer includes a material having an etching resistance to the etchant of the upper layer film.

The method of manufacturing the photomask of the present invention will be described below with reference to FIGS. 4 and 5. FIG.

(Manufacturing method of photomask of Fig. 4)

One of the methods of manufacturing the photomask of the present invention will be described in the order of steps with reference to FIG.

4 (A)

First, a photomask blank is prepared. The lower layer film 20, the intermediate film 30 and the upper layer film 40 are laminated on the transparent substrate 10 and the photoresist film 50 is formed on the uppermost surface.

Here, as the transparent substrate 10, a quartz glass substrate having its surface polished is used. The size is not particularly limited, and is appropriately selected according to the substrate (for example, a substrate for a display device or the like) to be exposed using the mask and the use. For example, a rectangular substrate 300 mm or more on one side is used.

Further, in this embodiment, the lower layer film 20 is a semi-light-transmitting film which transmits a part of the exposure light used when the photomask is exposed. This semitransparent film will be described later again. The film thickness of the semitransparent film may be, for example, 50 to 2000 angstroms.

The upper layer film 40 can be a light-shielding film that shields the exposure light by substantially shielding it, or when it becomes a photomask, by laminating it with another film. The light shielding film will be described later again. The thickness of the light-shielding film may be, for example, 500 to 2000 Å.

Here, the etching characteristics of the lower film 20 and the upper film 40 are not particularly limited. However, it is preferable that the lower layer film 20 includes a material which is etched by the etching agent of the upper layer film 40. That is, it is preferable that the lower layer film 20 and the upper layer film 40 are etched by a common etching agent. For example, the upper layer film 40 and the lower layer film 20 can be a film containing a common metal. In the present embodiment, any of them will be described using a film containing Cr.

On the other hand, it is preferable that the intermediate film 30 includes a material having etching resistance to at least one of the upper film 40 and the lower film 20. [ Preferably, the upper layer film 40 and the lower layer film 20 include a material having an etching selectivity (in this case, the intermediate film 30 is also referred to as an &quot; etching stopper film &quot;). In this embodiment, the interlayer 30 is composed of elements other than Cr. The film thickness of the interlayer 30 may be, for example, 10 to 500 angstroms, and more preferably 25 to 200 angstroms.

A photoresist film 50 (hereinafter also referred to as a resist film or a resist) is formed on the upper layer film 40 by application. The film thickness of the photoresist film 50 may be, for example, 8000 to 10000 angstroms. Here, a case where a positive type photoresist film is used will be described.

4 (B)

Next, the photomask blank is set in the drawing apparatus, and a predetermined pattern is drawn. The drawing apparatus uses an FPD mask, and applies laser imaging. Thereafter, the resist film 50 is developed. As the developer, known ones can be used, and for example, inorganic alkaline developers such as KOH and NaOH can be suitably used. Further, since the first resist pattern 50P1 formed by this development is subjected to the shape change by further developing at the subsequent stage, the phenomenon at the step of FIG. 4B is also referred to as a preliminary phenomenon.

4 (C)

Using the first resist pattern 50P1 formed by the preliminary development as a mask, the upper layer film 40 is etched (preliminary etching 1) by using an etchant for the upper layer film. The etching may be dry etching or wet etching, but wet etching is applied in this embodiment. Since the first resist pattern 50P1 is used again as a mask after the second resist pattern 50P2 is formed by changing the shape again in the subsequent process, the damage or film reduction of the resist pattern by etching is hardly observed Wet etch that does not occur can be advantageously applied.

4 (D)

Subsequently, the interlayer 30 is etched using the etching agent for interlayer etching (preliminary etching 2). This etching may be either dry etching or wet etching, but wet etching is more preferable. In the case of applying dry etching, the first resist pattern 50P1 serves as a mask, but since the wet etching is applied here, the etched upper layer film 40 becomes a mask. As a result, a part of the lower layer film is exposed.

4 (E)

Subsequently, the second resist pattern 50P2 is formed by further developing the first resist pattern 50P1. In the preliminary development step, the fully-exposed resist is eluted by development and the first resist pattern 50P1 is formed, but the edge portion is exposed to an insufficient amount of light which does not reach the threshold of development. This insufficient exposure is performed by using an edge of the first resist pattern 50P1 which is generated with a constant width and by further developing the edge of the first resist pattern 50P1 by a predetermined dimension D The part can be retracted. The effect of the present invention is remarkable when the width (D) (the width of the first resist pattern 50P1 disappearing) D (mu m) is 1 mu m or less, more preferably 0.1 to 1 mu m, Do. Thus, the edge portion of the upper layer film 40 covered with the first resist pattern 50P1 is exposed at a width of D (占 퐉).

In this embodiment, the resist of D = 0.5 占 퐉 is eluted from the edge of the first resist pattern 50P1 to retreat the edge. This is a case in which, in the finally completed photomask, an edge portion (also referred to as a rim) including a half-transparent portion with a width of 0.5 m adjacent to the peripheral portion of the light-shielding portion of the transfer pattern is formed .

In order to control the width of the rim, it is necessary to grasp the progress speed of the further development in advance and adjust the development time according to the width of the semi-light-projected portion determined from the design of the photomask to be obtained.

In addition, when the additional development is carried out, a refractory layer is formed on the surface layer portion of the first resist pattern 50P1. When this becomes a hindrance to further development, the first resist pattern 50P1 is formed by ozone water or plasma ashing, A process of removing only the extremely shallow surface layer portion of the surface 50P1 may be performed.

4 (F)

Using the second resist pattern 50P2 thus formed as a mask, etching is again performed using an etching agent for the upper layer film. As a result, the width corresponding to D (占 퐉) of the edge portion of the upper layer film 40 is etched away, and the edge portion of the intermediate film 30 covered with the removed portion is exposed.

In addition, the exposed portion of the lower layer film 20 exposed by the above-described preliminary etching is etched away.

The step of further etching the upper layer film 40 and etching the exposed portion of the lower layer film 20 is referred to as post-etching in contrast to the preliminary etching described above.

Also in the subsequent etching, any of dry etching and wet etching may be applied, but it is more preferable to apply wet etching. As a result, the edge portion of the intermediate film 30 covered by the upper layer film 40 is exposed at a width of D (占 퐉). Further, the surface of the transparent substrate 10 covered with the lower layer film 20 is partially exposed. Thus, the transparent portion 103, the shielding portion 102, and the translucent portions 101a and 101b are formed.

In the post-etching process, the upper film 40 is further etched using the second resist pattern 50P2 as a mask, and then the lower film 20 is etched using the etched intermediate film 30 as a mask. Etching may be performed, or vice versa. It is preferable that the material of the upper layer film 40 and the lower layer film 20 is made of a material which can be etched by the same etching agent and the etching is proceeded simultaneously for these two films (FIG. 4 (F) Indicated by a dotted circle).

That is, according to the method of the present invention, not only when the etching characteristics of the upper layer film 40 and the lower layer film 20 are different from each other (having mutual etching selectivity) but also when the etching characteristics are common, And patterning can be performed efficiently.

4 (G)

Subsequently, when the second resist pattern 50P2 is peeled off, the photomask 100 of the present invention shown in Fig. 11 is completed.

The photomask 100 is formed by stacking a lower layer film 20 and an intermediate film 30 on a transparent substrate 10 to form translucent portions 101a and 101b on the transparent substrate 10, And the lower layer film 20, the intermediate film 30 and the upper layer film 40 are laminated on the transparent substrate 10 to form the light shielding portion 102. [

4 (H)

Thereafter, an etchant for an interlayer film may be applied, and further, an exposed portion of the interlayer 30 may be etched away. Thereby, the photomask 100 of the present invention shown in Fig. 10 is completed.

The photomask 100 is formed by exposing the transparent substrate 10 to form a transparent portion 103 and forming a lower layer film 20 on the transparent substrate 10 to form translucent portions 101a and 101b, The lower layer film 20, the intermediate film 30 and the upper layer film 40 are laminated on the substrate 10 to form the light shielding portion 102. [

The manufacturing method of the photomask of Fig. 5

Next, another method of manufacturing the photomask of the present invention will be described with reference to FIG.

5 (A) to (F) are the same as those in Fig.

4 (G), the second resist pattern 50P2 is peeled off, whereas in (G ') of FIG. 5, the intermediate film 30 is etched using an etchant for an interlayer film. Then, the second resist pattern 50P2 is peeled off ((H ') in FIG. 5). By this method, the photomask 100 of the present invention shown in Fig. 10 is completed.

The photomask of the present invention will be described again.

It is preferable that the undercoat film is a translucent film that partially transmits the exposure light when the photomask of the present embodiment is mounted on an exposure apparatus and exposed.

It is preferable to have a desired exposure light transmittance and a phase shift amount in a single layer film (photomask in Fig. 10) or in a lamination of a lower layer film and an interlayer film (photomask in Fig. 11).

On the other hand, the upper layer film can be a light-shielding film that substantially shields exposure light, alone or in lamination with a lower layer film or an interlayer film. The upper layer film may preferably have an optical density OD (Optical Density) of 3 or more.

It is preferable that the lower layer film and the upper layer film are etched by a common etching agent. For this reason, the lower layer film and the upper layer film may be, for example, films containing the same metal. The same metal may be selected from chromium, tantalum, tungsten, molybdenum, and the like.

Specific examples of the material of the lower layer film include a Cr compound (Cr oxide (CrOx), nitride (CrNx), carbide (CrCx), oxynitride (CrOxNy), nitride carbide (CrCxNy), oxycarbide (CrOxCy) CrOxNyCz), fluoride (CrFx), etc.), and the like are exemplified Si compound (SiO _2, SOG), a metal silicide compound (TaSi, MoSi, WSi, etc. or their nitrides, oxynitride).

On the other hand, in addition to chromium and molybdenum, the same material as the lower layer film can be used as the material of the upper layer film.

By using the above materials, the semi-light-transmitting film and the upper film can be used as the light-shielding film for the lower layer film.

Preferably, the lower film (semitransparent film) and the upper film (light-shielding film) are both formed of a material containing Cr.

For etching the film containing Cr, an etching solution containing ceric ammonium nitrate known as an etchant for chromium may be used. When dry etching is applied, an etching gas of chlorine gas can be used.

When the material of the film is a metal silicide, for example, a MoSi-based material, an etching solution obtained by adding an oxidizing agent such as hydrogen peroxide, nitric acid or sulfuric acid to a fluorine compound such as hydrofluoric acid, hydrofluoric acid or ammonium hydrogen fluoride can be used. Dry etching using a fluorine-based etching gas may also be applied.

It is preferable that the upper layer film, the intermediate layer and the lower layer film be substantially transparent (optical density OD = 3 or more) in the laminated state, but depending on the use of the photomask 100, (For example, transmittance &amp;le; 20%). In the present invention, it is assumed that the upper layer film 40 is a light shielding film having an optical density (OD) 3 or more, and the lower layer film 20 is a semi-light transmitting film partially transmitting exposure light. The preferable transmittance range of the lower layer film 20 and phase shift characteristics will be described later.

Further, in addition to the above-mentioned upper layer film, intermediate film and lower layer film, another film may be formed above, below, or between these films within the range not hindering the effect of the present invention. For example, a film having an antireflection function may be formed on the upper layer film.

As the material of the interlayer film, it is preferable to use those having the etching selectivity of the upper layer film and the lower layer film. For example, the material of the interlayer may be aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), titanium (Ti), manganese (Ni), Zr, Mg, Cu, Y, S, In, Sn, Tantalum, Hf, (Nb), and silicon (Si) may be used. Specific examples of the material include nitride, oxide, carbide, oxynitride, carbonitride, oxycarbide, and oxycarbonitride of the material.

For example, the upper layer film and the lower layer film may all be films containing Cr. As the material of the interlayer film, a material containing at least one of molybdenum (Mo), silicon (Si), tantalum (Ta), hafnium (Hf), aluminum (Al) and titanium (Ti)

For example, when a material containing titanium is used as the material of the interlayer film, titanium oxide, titanium nitride, or titanium oxynitride can be used. In this case, as the etching solution, a mixed aqueous solution of potassium oxide and hydrogen peroxide can be used.

Further, as the material of the interlayer film, a material containing a metal silicide, that is, a material containing a metal and silicon, may be used.

Examples of the metal include transition metals such as molybdenum (Mo), tantalum (Ta), tungsten (W), and titanium (Ti). In addition, the metal silicide can be formed, for example, from a nitride of a metal suicide, an oxide of a metal suicide, a carbide of a metal suicide, an oxynitride of a metal suicide, a carbonitride of a metal suicide, an oxycarbide of a metal suicide, .

Specifically, a nitride, an oxide, a carbide, an oxynitride, a carbonitride, an oxycarbide and an oxide carbonitride of molybdenum silicide (MoSi), a nitride, an oxide, a carbide, an oxynitride, a carbonitride, an oxide carbide and a nitride of tantalum silicide A nitride, an oxide, a carbide, an oxide nitride, a carbonitride, an oxide carbide and an oxide carbonitride of tungsten silicide (WSi) and a nitride, an oxide, a carbide, an oxynitride, a carbonitride, , And oxidized carbonitride.

As described above, the lower layer film, the intermediate film, and the upper layer film may be dry-etched or wet-etched, but wet etching is preferred. The wet etching does not require a large-scale vacuum etching chamber in the patterning of a photomask for manufacturing a display device having a large area (for example, one side is 300 mm or more) and in various sizes, It is advantageous in that there is little damage to the surface.

6, the photomask 100 according to the present embodiment includes a transparent portion 103 formed by patterning a lower layer film, an intermediate film, and an upper layer film on a transparent substrate, a light shielding portion 102, (101a, 101b). The transparent portion (103) is formed by exposing the transparent substrate (10). The light-shielding portion 102 is formed by laminating a lower layer film, an interlayer film, and an upper layer film on a transparent substrate 10. The translucent portions 101a and 101b are formed by forming a lower layer film, a lower layer film and an interlayer film on a transparent substrate 10. The translucent portions 101a and 101b have portions of a constant line width D (占 퐉) formed adjacent to the edge of the light-shielding portion 102.

The predetermined width D is not particularly limited, but when D is 1 (탆) or less, the effect of the present invention is remarkable. For example, it is advantageous if D is a fine line width of about 0.1 to 1.0 (mu m).

In the photomask 100 according to the present embodiment shown in Fig. 6, the upper layer film (light-shielding film) pattern is located at the center in the horizontal direction of the lower layer film (semitransparent film) pattern. That is, in FIG. 6, the shielding portion 102 and the translucent portions 101a and 101b are arranged in line symmetry when viewed from the plane, and in FIG. 7, they are arranged in rotational symmetry. Adjacent to the edge of the upper layer film pattern, a part of the lower layer film pattern is exposed with a constant width.

The photomask of the present invention includes the following modes. In other words,

Wherein the transparent portion is formed by exposing a surface of the transparent substrate,

The light-shielding portion is formed by stacking a semitransparent film, an etching stopper film, and a light-shielding film in this order from the transparent substrate side on the transparent substrate,

Wherein the translucent portion has a portion of a constant width D (占 퐉) formed adjacent to an edge of the light-shielding portion, wherein the translucent film is formed on the transparent substrate, or the translucent film and the etching stopper film are laminated , D? 1.0.

The semi-transparent portion formed adjacent to the first edge of the light-shielding portion 102 is referred to as a first translucent portion 101a, and the semi-transparent portion formed adjacent to the second edge of the light- The difference between the widths D1 and D2 of the second translucent portion 101b can be set to 0.1 mu m or less. The difference between the widths D1 and D2 is more preferably 0.05 m or less (see Fig. 6).

In other words, according to the present invention, alignment deviation due to drawing is not generated twice. Therefore, in the semitransparent portions 101a and 101b having a width of 1 mu m or less, the line width deviation (Transfer pattern of asymmetry) can be prevented from occurring.

A third translucent portion 101c formed adjacent to the first edge of the transparent portion 103 and a fourth translucent portion 101d formed adjacent to the second edge of the transparent portion 103 opposite to the first edge, And the difference between the respective widths D3 and D4 can be set to 0.1 占 퐉 or less. The difference between the widths D3 and D4 is more preferably 0.05 m or less (see Fig. 7).

Here, in the case of the photomask of Fig. 10, the shape of the transfer pattern, that is, the shape of the upper layer film pattern and the lower layer film pattern, may be determined in accordance with the use of the photomask. In the case of the photomask of Fig. 11, the shape of the transfer pattern, that is, the shape of the upper layer film pattern, the intermediate film pattern and the lower layer film pattern, may be determined in accordance with the use of the photomask.

For example, when manufacturing a photomask having a line-and-space pattern as shown in Fig. 6 or a hole pattern as shown in Fig. 7 as a transfer pattern, this embodiment can be advantageously applied. As shown in Fig. 6, in the case of the line and space pattern, the light shielding portion is arranged at the center of the line pattern, and a semi-transparent portion with a narrow constant width is formed at the edge portion of the line pattern, have. As shown in Fig. 7, in the case of the hole pattern, a semitransparent portion of a constant width is formed at the edge of the hole opened in the light-shielding portion.

Especially preferable as the transfer pattern is a line-and-space pattern. This is because the direction of the additional development is constant (for example, in the X direction), so that the CD precision is very high and variation in the width in the plane can be suppressed.

The width of a portion where a part of the lower layer film pattern is exposed may be 1/2 or less of the line width of the upper layer film pattern. However, as described above, when the width of this portion is 0.1 mu m to 1.0 mu m, the effect of the present embodiment becomes remarkable. Particularly, when the width of the exposed portion of the lower layer film pattern is 1.0 占 퐉 or less, the effect of the present embodiment becomes remarkable (when the lower layer film is used as a semitransparent film, this portion becomes the line width of the semitransparent portion in the photomask). This is because these dimensions are dimensions that are difficult to obtain uniformly in the conventional methods described in the above-mentioned prior art documents. When the width of this portion is 0.1 mu m or more, the optical function as the transfer pattern of the photomask is advantageously exhibited.

The photomask of the present invention has a light-shielding portion, a light-projecting portion, and a semi-light-projecting portion.

Here, the transmittance of the translucent portion is preferably 1 to 60% with respect to the representative wavelength included in the exposure light when the transmittance of the transparent substrate is 100%.

Here, the exposure light is a light source generally employed in an LCD exposure apparatus, and light including any one of i-line, h-line, and g-line can be used. More preferably, the exposure light includes both of them. In the present invention, the transmissivity and the phase difference (or the phase shift amount) of the exposure light are defined by using any one of the above as a representative wavelength.

(When the photomask of the present invention is used as a phase shift mask)

The structure of the first photomask shown in Fig. 10 will be described.

When the lower layer film 20 is constituted by a phase shift film and the upper layer film 40 is constituted by a light shielding film, the photomask 100 according to the present embodiment can be used as a phase shift mask. At this time, the lower layer film 20 has a transmittance of 2 to 30% with respect to the representative wavelength included in the exposure light. The lower layer film 20 constitutes a semi-transparent portion. More preferably, the transmittance of the lower layer film 20 is 2 to 15%, more preferably 3 to 10%. It is preferable that the lower layer film 20 is a film in which the phase shift amount with respect to the representative wavelength is approximately 180 degrees. 180 deg. Means 180 deg. 60 deg.. More preferably, 180 DEG is 180 DEG +/- 30 DEG.

More preferably, the lower layer film as the phase shift film preferably has a deviation of the phase shift amount with respect to i-line, h-line and g-line of 30 ° or less, more preferably 20 ° or less.

More preferably, the lower layer film as the phase shift film has a transmittance variation of 10% or less, preferably 5% or less, with respect to i-line, h-line and g-line. The transmittance deviation means a difference between the transmittance of the semi-light-transmitting film and the transmittance of the semi-light-transmitting film with respect to the i-line, h-line and g-line, respectively, as Ti, Th and Tg (%).

In the case of the configuration of the second photomask shown in Fig. 11, the portion where the lower film 20 and the intermediate film 30 are laminated becomes a semitransparent portion. This lamination portion is a semi-light-projecting portion having a desired exposure light transmittance and a phase shift amount. Specifically, similarly to the above, the semi-light-transmitting portion is constituted by a laminated film having a transmittance of 2 to 30% with respect to the representative wavelength included in the exposure light. More preferably, the transmittance of the laminated film is 2 to 15%, more preferably 3 to 10%. The laminated film of the lower film 20 and the intermediate film 30 is preferably a laminated film having a phase shift amount of about 180 DEG with respect to the representative wavelength. 180 deg. Means 180 deg. 60 deg.. More preferably, 180 DEG is 180 DEG +/- 30 DEG.

It is also preferable that the transmittance deviation and the retardation deviation of the laminated film as the phase shift film are in the same range as described for the first photomask.

In the second photomask, it is preferable that the phase shift amount of the underlayer film alone is 90% or more with respect to the phase shift amount of the laminated film in the semi-transmissive portion. The transmittance of the laminated film is preferably 90% or more of the transmittance of the underlayer film alone. For example, when the phase shift amount of the laminated film is 180 ± 60 °, the phase shift amount of the underlayer film alone may be 165 ± 55 °.

10, the phase of the light (light of the representative wavelength) transmitted through the transparent portion 103 and the phase of the light transmitted through the lower layer film 20 (lower layer film 20P (The light of the representative wavelength) transmitted through the semitransparent sections 101a and 101b in which the semitransparent sections 101a and 101b are formed is shifted by about 180 degrees from the phase of the semitransparent sections 101a and 101b So that mutual interference of light can be caused. As a result, the contrast of the transfer image can be improved. The phase shift amount? (Rad) of the light passing through the translucent sections 101a and 101b depends on the refractive index (complex refractive index real part) n and the film thickness d of the lower layer film 20 used therein, .

&Quot; (1) &quot;

? = 2? d (n-1) /?

Here,? Is the wavelength of the exposure light.

Therefore, in order to shift the phase by 180 占 the film thickness d of the lower layer film 20 may be determined by the following equation (2).

&Quot; (2) &quot;

d =? / {2 (n-1)}

By this phase shift mask, an increase in the depth of focus for obtaining a necessary resolution is achieved, and resolution and process applicability can be improved without changing the exposure wavelength.

12 shows a line-and-space (L / S) pattern of a binary mask (mask having only a light-shielding film pattern formed on a transparent substrate). 13 shows the L / S pattern having the same pitch as that of Fig. 12, in which a phase shift portion having a constant width is formed at the edge of the line portion. The transfer pattern shown in Fig. 13 can be manufactured by the manufacturing method (either the first or the second photomask) of the present embodiment.

14 shows the intensity curve of the light received by the transferred body when the transfer pattern of Figs. 12 and 13 is transferred onto the transferred body using the exposure apparatus for LCD, respectively. The vertical axis in Fig. 14 shows the light transmission intensity, and the horizontal axis shows the transfer position on the transferred body. The dotted line in Fig. 14 represents the light transmission intensity of the light transmitted through the phase shift mask (embodiment) shown in Fig. The solid line in Fig. 14 shows the light transmission intensity of the light transmitted through the binary mask (comparative example) shown in Fig. According to Fig. 14, in the phase shift mask of Fig. 13, the contrast is improved and excellent patterning accuracy is obtained in that the diffracted light of the opposite phase interferes at the boundary between the space portion and the line portion .

When the transfer pattern shown in Fig. 13 has a pattern shift as shown in Fig. 8, the interference effect obtained at both edges of the line pattern becomes asymmetric, so that the accuracy of the pattern formed on the transferred body becomes .

The phase shift mask shown in Fig. 13 is obtained by constituting the lower layer film of the present embodiment as a phase shift film and constituting the upper layer film of this embodiment as a light-shielding film as described above (in the case of the first photomask). Here, the phase shift film preferably shifts the phase of the exposure light by approximately 180 degrees. When the exposure light includes a plurality of wavelengths (for example, in the case of using a light source including i-line, h-line, and g-line), the phase shift film is preferably a representative wavelength, The phase of the exposure light is shifted by approximately 180 degrees.

Here, for example, the phase shift amount of 180 占 means that the phase difference between light transmitted through only the transparent substrate 10 and light transmitted through the transparent substrate 10 and the lower layer film 20 becomes 180 °. (2n + 1)? (Where n = 0, 1, 2, ...) is expressed by a phase shift amount of 180 degrees.

(When the photomask of the present invention is used as a transmission auxiliary type mask)

In another mode of the photomask of the present embodiment, the lower layer film has a transmittance of 2 to 60%, more preferably 3 to 50%, with respect to the representative wavelength included in the exposure light, Or may be configured as a film whose phase shift amount is more than 0 DEG and not more than 90 DEG. The lower layer film in this case has a function of assisting the amount of transmitted light of the transmissive portion (hereinafter, this film is also referred to as a 'transmissive auxiliary film'), rather than a function of improving the contrast by exerting the above phase shifting action.

For example, in the photomask according to the present embodiment shown in Fig. 10, the amount of transmitted light of the light transmitting portion can be assisted by making the lower layer film pattern into this transmission auxiliary film pattern. Alternatively, in the photomask according to the embodiment shown in FIG. 11, the amount of transmitted light of the transparent portion can be assisted by making the laminated pattern of the lower layer film and the intermediate film into this transparent auxiliary film pattern.

Such a photomask has the same effect as that of increasing the amount of light irradiated by the exposure apparatus, resulting in significant advantages in energy saving, shortening of exposure time, and improvement of production efficiency.

If the transmittance is too large, there is a risk that the in-plane uniformity of the transmittance deteriorates as the film becomes thinner. Therefore, the transmittance of the underlayer film is in the range of 2 to 60% . The preferable range of the transmittance of the underlayer film 20 is 10 to 45%, more preferably 10 to 30%, and further preferably 10 to 20%.

When the amount of phase shift is excessively small, selection of a material constituting the lower layer film (semitransparent film) is not easy, and when the amount of phase shift is excessively large, optical interference of opposite phase occurs, It is preferable to select the material and the film thickness of the film in consideration of the fact that the auxiliary effect is impaired. The range of the phase shift amount of the underlayer film is more than 0 ° and not more than 90 ° (this means that (2n-1/2) π to (2n + 1/2) π (n is an integer) in radian ), Preferably 5 to 60 deg., More preferably 5 to 45 deg.

Fig. 15 shows a top view of the structure of the photomask having the light amount auxiliary function. Here, a line-and-space pattern having a pitch of 6 占 퐉 (3 占 퐉 in a line portion and 3 占 퐉 in a space portion) is illustrated. The center of the line portion includes a light shielding portion having a width of 2 mu m, and a semi-light transmitting portion having a width of 0.5 mu m (total of 1.0 mu m in total) is formed adjacent to the edge of both sides. It has been confirmed by the inventors that such a transfer pattern is exposed by an LCD exposure apparatus and has sufficient transferability despite the line width which is difficult to be resolved by a line and space pattern of a binary mask having the same pitch.

A photomask having such a function is advantageous in particular as the pattern becomes finer. This is because when the line width of the light transmitting portion is narrowed, the amount of light transmitted through the portion decreases, and when the photosensitive threshold value of the resist film formed on the transferred body is not reached, the resist pattern becomes difficult to exhibit its function as an etching mask.

8, the transfer position (pattern position) on the transferred body is shifted and the peak light amount of the transparent portion is lowered The transfer accuracy is impaired. The photomask according to the present embodiment is a photomask that does not cause such trouble and is excellent in transfer performance.

It is also confirmed that this effect is not limited to the line and space pattern, but can be obtained in the same manner as the hole pattern.

That is, the optical effect by the lower layer film (in the case of the first photomask) exposed on both sides of the upper layer film is not affected by the phase shift effect, the light amount auxiliary effect or the effect by other optical behavior It is required to generate them symmetrically in the line width direction. Here, in the case of manufacturing a photomask using a plurality of photolithography processes as in the method disclosed in Patent Document 1, it is not possible to set mutual misalignment of a plurality of patterns (upper layer film pattern and lower layer film pattern) to zero And misalignment of about 0.3 탆 or more occurs.

On the contrary, in the present embodiment, two film patterns are formed by using the resist pattern drawn in one rendering step (in the second film pattern, the resist pattern is made smaller by a certain dimension box). This makes it possible to prevent the occurrence of misalignment between the upper layer film pattern and the lower layer film pattern. As a result, the optical effect such as the phase shift effect and the light amount auxiliary effect can be generated symmetrically in the line width direction based on the design value. Further, by reducing the number of times of the photolithography process by one, the efficiency of the production process can be improved. That is, the photomask having the above-described high optical function can be obtained with good productivity.

There is no particular limitation on the exposure apparatus to be used when the pattern is transferred onto the transferred body using the photomask 100 according to the present embodiment. However, the photomask 100 according to the present embodiment is an exposure apparatus for an LCD having a light source including, for example, i-line, h-line, and g-line and has a numerical aperture NA of 0.06 to 0.10, a coherence factor? The effect of the present invention is remarkable when it is used in combination with a projection exposure apparatus of equal exposure. Such an exposure apparatus generally uses light including i-line, h-line, and g-line as exposure light, and sets the resolution limit to about 3 m.

Of course, the present invention can also be applied to the case of transfer using a wider range of exposure apparatuses. For example, the NA may be in the range of 0.06 to 0.14, or 0.06 to 0.15. A high-resolution exposure apparatus in which the NA exceeds 0.08 is required, and the present invention can be applied to these.

Also, among the above wavelengths, exposure may be performed using only a single wavelength (for example, i-line).

In the present invention, the use of the photomask is not limited. For example, a fine hole pattern of a TFT (thin film transistor) of a display device (e.g., an LCD (liquid crystal display) or an organic EL (electroluminescence) Are particularly useful.

In the present invention, the pattern shape is preferably a pattern having a symmetry (in this embodiment, a pattern in which the semitransparent portion is symmetrically formed on the edge of the light-shielding portion). In this pattern, the width of the rim can be freely designed. For these reasons, as in the above applications, the present invention is advantageously used for a line-and-space pattern or a hole pattern. Further, as is apparent from the above, according to the present invention, as materials for the light-shielding film and the semi-light-transmitting film, those having no etching selectivity can be used. Therefore, there is a degree of freedom in using a material having no etching selectivity as a material of each of the lower layer film and the upper layer film.

As a result, according to the method of the present invention to which additional etching is applied, since the retreat of the edge of the resist pattern can be performed quantitatively and with high reproducibility and accuracy, even in the case of a large-size photomask, Can be increased.

10: transparent substrate
20: Lower layer film
30: Middle membrane
40: upper layer film
50: photoresist film
100: Photomask
101a to 101d: Semi-
102:
103:

Claims (10)

A manufacturing method of a photomask for manufacturing a display device having a transfer pattern on a transparent substrate,
A step of laminating a lower layer film, an intermediate film and an upper layer film on the transparent substrate and preparing a photomask blank on which a photoresist film is formed,
A step of performing laser imaging and preliminary development on the photoresist film to form a first resist pattern;
Etching the upper film using the first resist pattern as a mask and using the first resist pattern or the upper film as an etching mask to etch the interlayer,
Forming a second resist pattern by performing an additional development on the first resist pattern and moving back the edge of the first resist pattern by a predetermined width of 1 占 퐉 or less;
Etching the lower layer film by using the second resist pattern as a mask to further etch the upper layer film and using the etched intermediate layer as a mask,
Lt; / RTI &
Wherein the transfer pattern is a pattern having symmetry in which the upper layer film pattern is located at the center in the horizontal direction of the lower layer film pattern and is adjacent to the edge of the upper layer film pattern and is in contact with the lower layer film, Wherein the pattern is exposed at a constant width of 1 占 퐉 or less. The method according to claim 1,
Wherein the underlayer film includes a material which is etched by an etchant of the upper layer film,
Wherein the interlayer comprises a material having an etching resistance to the etching agent of the upper layer film,
Wherein the additional etching of the upper layer film and the etching of the lower layer film proceed simultaneously in the subsequent etching step. 3. The method according to claim 1 or 2,
And etching the intermediate film of the portion where the surface is exposed after the subsequent etching. 3. The method according to claim 1 or 2,
Wherein the lower layer film is a semi-light-transmitting film partially transmitting exposure light used for exposure of the photomask, and the upper layer film is a light-shielding film shielding the exposure light. 5. The method of claim 4,
Wherein the transfer pattern
A transparent portion having a surface of the transparent substrate exposed,
A light shielding portion having at least a light shielding film formed on the transparent substrate,
A semi-transmissive portion formed on the transparent substrate with a width of 1 mu m or less adjacent to an edge of the light-shielding portion while partially transmitting the exposure light by forming at least the semi-
The method comprising the steps of: 6. The method of claim 5,
Wherein the semi-light-transmitting film has a transmittance of 1 to 30% with respect to a representative wavelength included in exposure light used for exposure of the photomask, and a phase shift amount with respect to light of the representative wavelength is 120 to 240 DEG. A method of manufacturing a photomask for manufacturing a display device. 6. The method of claim 5,
Wherein the translucent film has a transmittance of 1 to 60% with respect to a representative wavelength included in exposure light used for exposure of the photomask and a phase shift amount with respect to light of the representative wavelength is 90 DEG or less. A method for manufacturing a photomask for manufacturing. 6. The method of claim 5,
When the difference between D1 and D2 is 0.1 or less when the widths of two semi-light-transmitting portions adjacent to two opposing edges of an arbitrary light-shielding portion in the transfer pattern are D1 (占 퐉) and D2 (占 퐉) Wherein the photomask is a photomask. A method for manufacturing a photomask, comprising the steps of: preparing the photomask according to claim 1 or 2;
And transferring the transfer pattern onto a transfer target body using an exposure apparatus. A method for manufacturing a photomask, comprising the steps of: preparing the photomask according to claim 1 or 2;
And transferring the transfer pattern onto the transfer target body using an exposure apparatus.

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