TW202040691A - Thermal processing apparatus and thermal processing method - Google Patents
Thermal processing apparatus and thermal processing method Download PDFInfo
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Abstract
Description
本發明係關於一種對基板進行熱處理之熱處理裝置及熱處理方法。The invention relates to a heat treatment device and a heat treatment method for heat treatment of a substrate.
先前以來,為了對液晶顯示裝置或有機EL(Electro Luminescence,電致發光)顯示裝置等中所使用之FPD(Flat Panel Display,平板顯示器)用基板、半導體基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等各種基板進行熱處理,使用熱處理裝置。In the past, in order to provide substrates for FPD (Flat Panel Display), semiconductor substrates, optical disk substrates, magnetic disk substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, etc. Various substrates such as magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates are heat-treated using heat treatment equipment.
於熱處理裝置中,例如藉由將基板於保持為預先設定之熱處理溫度之板構件上支持規定時間,而進行熱處理。於對複數個基板依序進行熱處理之情形時,並不限於針對該等複數個基板設定共通之熱處理溫度。於針對依序進行熱處理之2片基板設定互不相同之熱處理溫度之情形時,必須於一基板之熱處理後且另一基板之熱處理前變更板構件之溫度。In the heat treatment device, for example, the heat treatment is performed by supporting the substrate on a plate member maintained at a preset heat treatment temperature for a predetermined time. In the case of sequentially performing heat treatment on a plurality of substrates, it is not limited to setting a common heat treatment temperature for the plurality of substrates. When setting different heat treatment temperatures for two substrates that are sequentially heat-treated, the temperature of the plate member must be changed after the heat treatment of one substrate and before the heat treatment of the other substrate.
板構件之溫度可藉由各種方法而變更。例如,於專利文獻1中所記載之溫度變更系統中,藉由調整烘烤板部(板構件)中所包含之加熱器層之驅動狀態,能夠使該烘烤板部之溫度上升或下降。進而,於該溫度變更系統中,使藉由主動冷卻板而冷卻之被動冷卻板經由熱墊接觸於烘烤板部,藉此能夠使該烘烤板部之溫度大幅下降。The temperature of the plate member can be changed by various methods. For example, in the temperature changing system described in
[專利文獻1]日本專利第5658083號[Patent Document 1] Japanese Patent No. 5658083
[發明所欲解決之問題][The problem to be solved by the invention]
通常,於熱處理裝置中,根據變更前後之2個溫度,預先規定了用以變更板構件之溫度之動作條件。然而,根據設置有熱處理裝置之空間之溫度或熱處理裝置之個體差異等,即便使熱處理裝置按照預先規定之動作條件而動作,亦存在難以進行準確之溫度變更之情形。於該情形時,若為了準確地變更板構件之溫度而反覆進行微調整,則溫度變更所需之時間變長,而熱處理效率降低。Generally, in a heat treatment device, the operating conditions for changing the temperature of the plate member are predetermined based on the two temperatures before and after the change. However, depending on the temperature of the space in which the heat treatment device is installed or the individual difference of the heat treatment device, even if the heat treatment device is operated under predetermined operating conditions, it may be difficult to perform accurate temperature changes. In this case, if fine adjustments are repeatedly performed in order to accurately change the temperature of the plate member, the time required for the temperature change becomes longer, and the heat treatment efficiency decreases.
本發明之目的在於提供一種熱處理裝置及熱處理方法,其能夠抑制伴隨熱處理溫度之變更所產生之熱處理效率降低。 [解決問題之技術手段]The object of the present invention is to provide a heat treatment device and a heat treatment method that can suppress the reduction in heat treatment efficiency caused by the change of the heat treatment temperature. [Technical means to solve the problem]
(1)本發明之一態樣之熱處理裝置係對基板進行熱處理者,且具備:板構件,其載置基板;熱處理部,其通過板構件對載置於板構件上之基板進行熱處理;記憶部,其記憶將板構件之溫度從所設定之第1溫度變更為所設定之第2溫度時之熱處理部之動作條件;動作控制部,其使熱處理部按照記憶部中所記憶之動作條件而動作;溫度檢測器,其檢測板構件之溫度;及條件變更部,其以於熱處理部按照動作條件而動作時藉由溫度檢測器檢測出之溫度變化接近預先規定之基準波形的方式,變更記憶部中記憶之動作條件。(1) A heat treatment device of one aspect of the present invention is a device for heat treatment of a substrate, and includes: a plate member on which the substrate is placed; a heat treatment section that heats the substrate placed on the plate member through the plate member; and memory; Section, which memorizes the operating conditions of the heat treatment section when the temperature of the plate member is changed from the set first temperature to the set second temperature; the action control section causes the heat treatment section to change according to the operating conditions memorized in the memory section Action; temperature detector, which detects the temperature of the plate member; and condition change section, which changes the memory in such a way that the temperature change detected by the temperature detector when the heat treatment section operates according to the operating conditions is close to a predetermined reference waveform The operating conditions of the memory in the department.
於該熱處理裝置中,藉由將基板載置於被調整至第1溫度之板構件上,而對所載置之基板進行熱處理。或者,藉由將基板載置於被調整至第2溫度之板構件上,而對所載置之基板進行熱處理。藉由對複數個基板依序進行熱處理,而依序進行對應於第1溫度之熱處理及對應於第2溫度之熱處理。於該情形時,必須於對應於第1溫度之熱處理後且對應於第2溫度之熱處理前,將板構件之溫度從第1溫度變更至第2溫度。In this heat treatment apparatus, by placing the substrate on the plate member adjusted to the first temperature, the placed substrate is heat treated. Or, by placing the substrate on a plate member adjusted to the second temperature, the placed substrate is heat-treated. By sequentially performing heat treatment on the plurality of substrates, the heat treatment corresponding to the first temperature and the heat treatment corresponding to the second temperature are sequentially performed. In this case, it is necessary to change the temperature of the plate member from the first temperature to the second temperature after the heat treatment corresponding to the first temperature and before the heat treatment corresponding to the second temperature.
於板構件之從第1溫度向第2溫度之溫度變更時,熱處理部按照記憶部中所記憶之動作條件而動作。此時,檢測板構件之溫度變化,以所檢測出之溫度變化接近基準波形之方式,變更記憶部中所記憶之動作條件。When the temperature of the plate member is changed from the first temperature to the second temperature, the heat treatment section operates according to the operating conditions memorized in the memory section. At this time, the temperature change of the detection plate member changes the operating conditions stored in the memory unit in such a way that the detected temperature change approaches the reference waveform.
於藉由對複數個基板依序進行處理,而使板構件之溫度再次從第1溫度變更至第2溫度時,熱處理部按照於前一次溫度變更時所變更後之動作條件而動作。藉此,板構件之從第1溫度向第2溫度之溫度變化與前一次溫度變更時相比更接近基準波形。When the temperature of the plate member is changed from the first temperature to the second temperature again by sequentially processing a plurality of substrates, the heat treatment section operates according to the operating conditions changed in the previous temperature change. Thereby, the temperature change of the plate member from the first temperature to the second temperature is closer to the reference waveform than at the time of the previous temperature change.
如此,藉由每當進行板構件之從第1溫度向第2溫度之溫度變更時,都變更動作條件,從而逐次適當地修正從第1溫度向第2溫度之溫度變更時之板構件之溫度變化。因而,能適當地縮短伴隨基板之熱處理溫度變更所產生之熱處理裝置之調整時間。其結果,能抑制伴隨熱處理溫度之變更而產生之熱處理效率降低。In this way, by changing the operating conditions every time the temperature of the plate member is changed from the first temperature to the second temperature, the temperature of the plate member when the temperature is changed from the first temperature to the second temperature is appropriately corrected successively Variety. Therefore, it is possible to appropriately shorten the adjustment time of the heat treatment device accompanying the change of the heat treatment temperature of the substrate. As a result, it is possible to suppress a decrease in the heat treatment efficiency accompanying the change of the heat treatment temperature.
(2)亦可為,動作條件包含一個或複數個控制參數之值,且條件變更部以檢測出之溫度變化接近基準波形之方式,變更記憶部中記憶之一個或複數個控制參數中之至少1者之值。(2) It can also be that the operating condition includes the value of one or more control parameters, and the condition changing unit changes at least one or more of the control parameters stored in the memory unit in such a way that the detected temperature change is close to the reference waveform The value of 1.
於該情形時,能藉由變更一個或複數個控制參數中之至少1個之值之簡單處理,而調整板構件之從第1溫度向第2溫度之溫度變化。In this case, the temperature change of the plate member from the first temperature to the second temperature can be adjusted by simple processing of changing the value of at least one of one or a plurality of control parameters.
(3)亦可為,熱處理部構成為能夠切換成對板構件進行加熱或冷卻之第1狀態及不對板構件進行加熱及冷卻之第2狀態,一個或複數個控制參數亦可包含熱處理部之第1及第2狀態之切換時序。(3) It is also possible that the heat treatment section is configured to be able to switch to the first state of heating or cooling the plate member and the second state of not heating or cooling the plate member. One or more control parameters may also include the heat treatment section The switching sequence of the first and second states.
於該情形時,藉由變更熱處理部之第1及第2狀態之切換時序,能大幅度調整板構件之從第1溫度向第2溫度之溫度變化。In this case, by changing the switching sequence of the first and second states of the heat treatment section, the temperature change of the plate member from the first temperature to the second temperature can be greatly adjusted.
(4)亦可為,熱處理部構成為能夠進行PID控制,一個或複數個控制參數包含用以將板構件之溫度從第1溫度變更為第2溫度之PID控制之比例參數、積分參數及微分參數中之至少一者。(4) It is also possible that the heat treatment part is configured to be capable of PID control, and one or more control parameters include proportional parameters, integral parameters and differentials for PID control to change the temperature of the plate member from the first temperature to the second temperature At least one of the parameters.
於該情形時,藉由變更比例參數、積分參數及微分參數之值中之至少一者,能調整板構件之從第1溫度向第2溫度之溫度變化。In this case, by changing at least one of the proportional parameter, the integral parameter, and the derivative parameter, the temperature change of the plate member from the first temperature to the second temperature can be adjusted.
(5)亦可為,一個或複數個控制參數包含熱處理部之輸出之上限。(5) It can also be that one or more control parameters include the upper limit of the output of the heat treatment section.
於該情形時,藉由變更熱處理部之輸出之上限,能夠對板構件之從第1溫度向第2溫度之溫度變化進行微調整。In this case, by changing the upper limit of the output of the heat treatment unit, the temperature change of the plate member from the first temperature to the second temperature can be finely adjusted.
(6)亦可為,條件變更部以如下方式進行動作條件之變更,即,於板構件之溫度從第1溫度變至第2溫度之期間內之特定時間點由溫度檢測器檢測出之溫度變化率,接近基準波形中與特定時間點對應之部分之溫度變化率。(6) It is also possible that the condition changing unit changes the operating conditions in the following manner, that is, the temperature detected by the temperature detector at a specific time point during the period when the temperature of the plate member changes from the first temperature to the second temperature The rate of change is close to the rate of temperature change of the part of the reference waveform corresponding to a specific time point.
於該情形時,可基於板構件之溫度變化率,而適當地調整板構件之從第1溫度向第2溫度之溫度變化。In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the temperature change rate of the plate member.
(7)條件變更部亦可以如下方式進行動作條件之變更,即,於板構件之溫度從第1溫度變至第2溫度之期間內之特定時間點由溫度檢測器檢測出之溫度之值,接近基準波形中與特定時間點對應之部分之溫度之值。(7) The condition changing unit can also change the operating conditions in the following manner, that is, the value of the temperature detected by the temperature detector at a specific time point during the period when the temperature of the plate member changes from the first temperature to the second temperature, The value close to the temperature of the part of the reference waveform corresponding to a specific time point.
於該情形時,可基於板構件之溫度之值,適當地調整板構件之從第1溫度向第2溫度之溫度變化。In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the value of the temperature of the plate member.
(8)亦可為,條件變更部以如下方式進行動作條件之變更,即,所檢測出之溫度之波形中產生之相對於第2溫度之過衝量或下衝量變小。(8) The condition changing unit may change the operating conditions in such a way that the amount of overshoot or undershoot relative to the second temperature generated in the waveform of the detected temperature becomes smaller.
於該情形時,可基於相對於第2溫度之過衝量或下衝量,適當地調整板構件之從第1溫度向第2溫度之溫度變化。In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the amount of overshoot or undershoot relative to the second temperature.
(9)本發明之另一態樣之熱處理方法係對基板進行熱處理者,且包括如下步驟:將基板載置於板構件上;通過板構件對所載置之基板進行藉由熱處理部施行之熱處理;將板構件之溫度從所設定之第1溫度變更為所設定之第2溫度時之熱處理部之動作條件記憶於記憶部;使熱處理部按照記憶部中所記憶之動作條件而動作;藉由溫度檢測器檢測板構件之溫度;及以於熱處理部按照動作條件而動作時藉由溫度檢測器所檢測出之溫度變化接近預先規定之基準波形的方式,變更記憶部中記憶之動作條件。(9) The heat treatment method of another aspect of the present invention is one that heat-treats a substrate, and includes the steps of: placing the substrate on a plate member; and performing the heat treatment on the placed substrate through the plate member. Heat treatment; the operating conditions of the heat treatment section when the temperature of the plate member is changed from the set first temperature to the set second temperature is stored in the memory section; the heat treatment section operates according to the operating conditions memorized in the memory section; The temperature of the plate member is detected by the temperature detector; and the operating condition stored in the memory portion is changed in such a way that the temperature change detected by the temperature detector is close to a predetermined reference waveform when the heat treatment portion operates according to the operating condition.
於該熱處理方法中,藉由將基板載置於被調整至第1溫度之板構件上,而對所載置之基板進行熱處理。或者,藉由將基板載置於被調整至第2溫度之板構件上,而對所載置之基板進行熱處理。藉由對複數個基板依序進行熱處理,而依序進行對應於第1溫度之熱處理及對應於第2溫度之熱處理。於該情形時,必須於對應於第1溫度之熱處理後且對應於第2溫度之熱處理前,將板構件之溫度從第1溫度變更至第2溫度。In this heat treatment method, by placing the substrate on a plate member adjusted to the first temperature, the placed substrate is heat treated. Alternatively, by placing the substrate on a plate member adjusted to the second temperature, the placed substrate is heat-treated. By sequentially performing heat treatment on the plurality of substrates, the heat treatment corresponding to the first temperature and the heat treatment corresponding to the second temperature are sequentially performed. In this case, it is necessary to change the temperature of the plate member from the first temperature to the second temperature after the heat treatment corresponding to the first temperature and before the heat treatment corresponding to the second temperature.
於板構件之從第1溫度向第2溫度之溫度變更時,熱處理部按照記憶部中所記憶之動作條件而動作。此時,檢測板構件之溫度變化,以所檢測出之溫度變化接近基準波形之方式,變更記憶部中所記憶之動作條件。When the temperature of the plate member is changed from the first temperature to the second temperature, the heat treatment section operates according to the operating conditions memorized in the memory section. At this time, the temperature change of the detection plate member changes the operating conditions stored in the memory unit in such a way that the detected temperature change approaches the reference waveform.
於藉由對複數個基板依序進行處理,而使板構件之溫度再次從第1溫度變更至第2溫度時,熱處理部按照前一次溫度變更時所變更後之動作條件而動作。藉此,板構件之從第1溫度向第2溫度之溫度變化與前一次溫度變更時相比更接近基準波形。When the temperature of the plate member is changed from the first temperature to the second temperature again by sequentially processing a plurality of substrates, the heat treatment section operates according to the changed operating conditions during the previous temperature change. Thereby, the temperature change of the plate member from the first temperature to the second temperature is closer to the reference waveform than at the time of the previous temperature change.
如此,藉由每當進行板構件之從第1溫度向第2溫度之溫度變更時,都變更動作條件,從而逐次適當地修正從第1溫度向第2溫度之溫度變更時之板構件之溫度變化。因而,能適當地縮短伴隨基板之熱處理溫度變更所產生之熱處理裝置之調整時間。其結果,能抑制伴隨熱處理溫度之變更而產生之熱處理效率降低。In this way, by changing the operating conditions every time the temperature of the plate member is changed from the first temperature to the second temperature, the temperature of the plate member when the temperature is changed from the first temperature to the second temperature is appropriately corrected successively Variety. Therefore, it is possible to appropriately shorten the adjustment time of the heat treatment device accompanying the change of the heat treatment temperature of the substrate. As a result, it is possible to suppress a decrease in the heat treatment efficiency accompanying the change of the heat treatment temperature.
(10)亦可為,動作條件包含一個或複數個控制參數之值,且變更動作條件之步驟包括:以所檢測出之溫度變化接近基準波形之方式,變更記憶部中記憶之一個或複數個控制參數中之至少1者之值。(10) It can also be that the operating condition includes the value of one or more control parameters, and the step of changing the operating condition includes: changing one or more of the memory in the memory unit in such a way that the detected temperature change is close to the reference waveform The value of at least one of the control parameters.
於該情形時,能藉由變更一個或複數個控制參數中之至少1個之值之簡單處理,而調整板構件之從第1溫度向第2溫度之溫度變化。 [發明之效果]In this case, the temperature change of the plate member from the first temperature to the second temperature can be adjusted by a simple process of changing the value of at least one of one or a plurality of control parameters. [Effects of Invention]
根據本發明,能夠抑制伴隨熱處理溫度之變更所產生之熱處理效率降低。According to the present invention, it is possible to suppress a decrease in heat treatment efficiency caused by a change in the heat treatment temperature.
以下,參照圖式,對本發明之實施形態之熱處理裝置及熱處理方法進行說明。於以下之說明中,基板係指液晶顯示裝置或有機EL(Electro Luminescence,電致發光)顯示裝置等中所使用之FPD(Flat Panel Display,平板顯示器)用基板、半導體基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽電池用基板等。於以下之說明中,作為熱處理裝置之一例,針對對基板進行加熱處理之熱處理裝置進行說明。Hereinafter, the heat treatment apparatus and heat treatment method of the embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to FPD (Flat Panel Display) substrates, semiconductor substrates, optical disk substrates, and magnetic substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Substrates for discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. In the following description, as an example of a heat treatment device, a heat treatment device that heats a substrate will be described.
(1)熱處理裝置之構成
圖1係表示本發明之一實施形態之熱處理裝置之構成之模式性側視圖。如圖1所示,熱處理裝置100包含熱處理板10、主動冷卻板20、被動冷卻板30、升降裝置40及控制裝置50。(1) Composition of heat treatment device
Fig. 1 is a schematic side view showing the structure of a heat treatment apparatus according to an embodiment of the present invention. As shown in FIG. 1, the
熱處理板10係具有扁平之圓柱形狀之金屬製傳熱板,且具有平坦之上表面及下表面。熱處理板10之上表面具有較成為加熱處理對象之基板W之外徑更大之外徑。於熱處理板10之上表面,設置有支持基板W之下表面之複數個接近球(proximity ball)等。於圖1中,以單點鏈線表示載置於熱處理板10上之基板W。The
於熱處理板10,設置有主加熱器11、中間加熱器(booster heater)12及溫度感測器19。溫度感測器19檢測熱處理板10上表面之溫度,將與檢測出之溫度對應之檢測信號輸出至下述之溫度獲取部55。The
主加熱器11及中間加熱器12之各者例如由雲母加熱器或帕耳帖元件等構成。於主加熱器11及中間加熱器12,連接有發熱驅動部13。發熱驅動部13例如以將熱處理板10之溫度保持在預先設定之溫度(設定溫度)之方式驅動主加熱器11。又,發熱驅動部13例如以熱處理板10之溫度於短時間內上升之方式驅動中間加熱器12。Each of the
主動冷卻板20以於較熱處理板10更靠下方之位置,與熱處理板10之下表面隔開規定距離之方式配置。主動冷卻板20具有朝向熱處理板10之上表面。於主動冷卻板20之上表面,設置有具有較高之熱導率之導熱片材(未圖示)。The
於主動冷卻板20設置有冷卻機構21。冷卻機構21例如由形成於主動冷卻板20內之冷卻水通路或帕耳帖元件等構成。於冷卻機構21連接有冷卻驅動部22。冷卻驅動部22以主動冷卻板20之上表面之溫度低於熱處理板10之溫度之方式驅動冷卻機構21。A
被動冷卻板30於熱處理板10與主動冷卻板20之間之空間內,受升降裝置40予以升降地支持(參照圖1之中空箭頭)。被動冷卻板30係金屬製圓板狀構件,具有上表面及下表面。被動冷卻板30之上表面與熱處理板10之下表面對向,被動冷卻板30之下表面與主動冷卻板20之上表面對向。於被動冷卻板30之上表面,設置有具有較高之熱導率之導熱片材(未圖示)。The
升降裝置40例如包含氣缸。於升降裝置40,連接有升降驅動部41。升降驅動部41例如以使被動冷卻板30相接於主動冷卻板20之方式驅動升降裝置40。於該情形時,被動冷卻板30藉由主動冷卻板20而冷卻。又,升降驅動部41例如以使被動冷卻板30相接於熱處理板10之方式驅動升降裝置40。於該情形時,熱處理板10藉由被動冷卻板30而冷卻。The lifting
控制裝置50對包含發熱驅動部13、冷卻驅動部22及升降驅動部41之熱處理裝置100之各構成要素之動作進行控制。控制裝置50之詳細情況將於下文敍述。再者,於上述熱處理裝置100中,進而設置有交接機構(未圖示),該交接機構係用以於熱處理板10與熱處理裝置100之外部裝置(例如搬送機器人)之間進行基板W之交接。The
(2)熱處理裝置100中之複數個基板W之熱處理
於圖1之熱處理裝置100中,對複數個基板W以與各個熱處理之內容對應之設定溫度依序進行加熱處理。圖2係表示對複數個基板W依序進行加熱處理之情形時之熱處理板10之溫度變化之一例的圖。(2) Heat treatment of multiple substrates W in the
於圖2所示之曲線圖中,縱軸表示熱處理板10之溫度,橫軸表示時間。又,以粗實線表示熱處理板10之溫度變化。於本例中,針對28片基板W,以4片基板W為單位變更熱處理之內容。因此,熱處理板10之設定溫度係以4片基板W為單位進行變更。In the graph shown in FIG. 2, the vertical axis represents the temperature of the heat-treated
具體而言,於時間點t1~t2之期間、時間點t5~t6之期間及時間點t13~t14之期間各者,在將熱處理板10之溫度保持於設定溫度90℃之狀態下進行基板W之加熱處理。又,於時間點t3~t4之期間、時間點t7~t8之期間及時間點t11~t12之期間內,在將熱處理板10之溫度保持於設定溫度115℃之狀態下進行基板W之加熱處理。進而,於時間點t9~t10之期間內,在將熱處理板10之溫度保持於設定溫度140℃之狀態下進行基板W之加熱處理。Specifically, during each of the period from time t1 to t2, the period from time t5 to t6, and the period from time t13 to t14, the substrate W is performed while maintaining the temperature of the
於將未處理之基板W載置於保持為設定溫度之熱處理板10上時,例如如圖2中之中空箭頭所示,熱處理板10之溫度稍微下降。其後,熱處理板10之溫度藉由繼續驅動圖1之主加熱器11而於相對而言極短之時間內恢復至設定溫度。When the unprocessed substrate W is placed on the
於如圖2中之單點鏈線所包圍般,伴隨設定溫度變更而熱處理板10之溫度大幅度變化之情形時,存在僅藉由調整主加熱器11之輸出,難以於短時間內進行溫度變更之情形。因此,於本例中,當設定溫度上升時,變更開始後即刻驅動中間加熱器12。又,基於溫度感測器19之檢測信號,進行關於主加熱器11之PID(比例積分微分)控制。進而,調整主加熱器11之輸出之上限。另一方面,當設定溫度下降時,變更開始後即刻利用被動冷卻板30使熱處理板10冷卻。又,基於溫度感測器19之檢測信號,進行關於主加熱器11之PID控制。In the case where the temperature of the
於存在預先規定之複數個設定溫度之情形時,用以將熱處理板10之溫度從一設定溫度變更至另一設定溫度之熱處理裝置100之動作條件可藉由模擬或實驗等而求出。因此,於熱處理板10中,針對複數個設定溫度中之每2個設定溫度之組合,預先設定有設定溫度變更時之動作條件(以下,稱為變更動作條件)。When there are a plurality of preset temperatures, the operating conditions of the
圖3係表示針對複數個設定溫度中之每2個設定溫度之組合所設定之變更動作條件之一例的圖。於以下之說明中,將變更前之設定溫度適當稱為開始溫度,將變更後之設定溫度適當稱為目標溫度。Fig. 3 is a diagram showing an example of changing operating conditions set for every combination of two set temperatures among a plurality of set temperatures. In the following description, the set temperature before the change is appropriately referred to as the starting temperature, and the set temperature after the change is appropriately referred to as the target temperature.
變更動作條件中包含加熱停止參數之值。加熱停止參數係關於中間加熱器12之控制參數,表示應停止加熱之熱處理板10之溫度。換言之,加熱停止參數之值表示於設定溫度變更時(上升時),應從中間加熱器12發熱之接通狀態切換為中間加熱器12不發熱之斷開狀態之時序。於圖3中,加熱停止參數記載為「加熱停止」。圖3之加熱停止參數之值表示為從目標溫度減去應停止加熱之溫度所得之值。The changed operating conditions include the value of the heating stop parameter. The heating stop parameter is a control parameter of the
又,變更動作條件中包含關於主加熱器11之PID控制之參數之值。又,變更動作條件中包含表示主加熱器11之輸出之上限之上限參數之值。於圖3中,上限參數記載為「加熱器上限」。上限參數之值例如以相對於主加熱器11之額定輸出所容許之輸出之上限之比率(%)表示。In addition, the changed operating condition includes the value of the parameter for PID control of the
進而,變更動作條件中包含冷卻停止參數之值。冷卻停止參數係關於升降裝置40之控制參數,表示應停止冷卻之熱處理板10之溫度。換言之,冷卻停止參數之值表示於設定溫度變更時(下降時),應從被動冷卻板30接觸於熱處理板10之接觸狀態切換為被動冷卻板30與熱處理板10隔開之非接觸狀態之時序。於圖3中,冷卻停止參數記載為「冷卻停止」。圖3之冷卻停止參數之值表示為從應停止冷卻之熱處理板10之溫度減去目標溫度所得之值。Furthermore, the value of the cooling stop parameter is included in the changed operating condition. The cooling stop parameter is a control parameter of the
根據圖3之例,與從開始溫度90℃向目標溫度115℃之變更對應之變更動作條件包含加熱停止參數「5」、比例參數「0.2」、積分參數「15」、微分參數「3」及上限參數「80」(%)。又,與從開始溫度115℃向目標溫度90℃之變更對應之變更動作條件包含冷卻停止參數「5」、比例參數「0.2」、積分參數「15」、微分參數「3」及上限參數「80」(%)。According to the example in Fig. 3, the change operation conditions corresponding to the change from the starting temperature of 90°C to the target temperature of 115°C include the heating stop parameter "5", the proportional parameter "0.2", the integral parameter "15", the derivative parameter "3" and The upper limit parameter is "80" (%). In addition, the change operation conditions corresponding to the change from the starting temperature of 115°C to the target temperature of 90°C include the cooling stop parameter "5", the proportional parameter "0.2", the integral parameter "15", the derivative parameter "3" and the upper limit parameter "80" "(%).
然,根據設置有熱處理裝置100之空間之溫度或熱處理裝置100之個體差異等,預先設定之變更動作條件未必合適。因此,於本實施形態中,每當變更熱處理板10之設定溫度時,都以該變更時之熱處理板10之溫度變化接近理想基準波形之方式將變更動作條件進行變更。理想之基準波形例如基於熱處理板10之構成、主加熱器11及中間加熱器12之發熱能力、以及主動冷卻板20及被動冷卻板30之冷卻能力而決定。However, according to the temperature of the space in which the
於圖2之例中,例如於在時間點t2~t3之期間內之設定溫度變更時,熱處理板10之溫度變化產生較大之過沖之情形時,以使該過沖變小之方式將變更動作條件進行變更。其後,於時間點t6~t7之期間內之設定溫度變更時,熱處理裝置100按照變更後之變更動作條件而動作。藉此,設定溫度變更所需之時間與時間點t2~t3之期間內之設定溫度變更時相比縮短。進而,於時間點t6~t7之期間內之設定溫度變更時,亦與時間點t2~t3之期間內之設定溫度變更時同樣地,將變更動作條件進行變更。藉此,於在較時間點t7更靠後之時間點,產生從設定溫度90℃向設定溫度115℃之變更之情形時,該變更所需之時間進一步縮短。In the example of FIG. 2, for example, when the set temperature is changed during the time point t2~t3, when the temperature change of the
又,於圖2之例中,例如於在時間點t4~t5之期間內之設定溫度變更時,熱處理板10之溫度變化產生較大之下沖之情形時,以使該下沖變小之方式將變更動作條件進行變更。其後,於時間點t12~t13之期間內之設定溫度變更時,熱處理裝置100按照變更後之變更動作條件而動作。藉此,設定溫度變更所需之時間與時間點t4~t5之期間內之設定溫度變更時相比縮短。進而,於時間點t12~t13之期間內之設定溫度變更時,亦與時間點t4~t5之期間內之設定溫度變更時同樣地,將變更動作條件進行變更。藉此,於在較時間點t13更靠後之時間點,產生從開始溫度115℃向目標溫度90℃之變更之情形時,該變更所需之時間進一步縮短。In the example of FIG. 2, for example, when the set temperature is changed during the time point t4 to t5, the temperature change of the
如上所述,於熱處理裝置100中,每當變更熱處理板10之設定溫度時,都將變更動作條件進行變更。藉此,設定溫度變更所需之時間依序縮短。其結果,能抑制伴隨熱處理溫度之變更所產生之熱處理效率降低。As described above, in the
(3)變更動作條件之具體變更例
圖4係用以說明用於使熱處理板10之溫度從較低之開始溫度ST上升至較高之目標溫度TT的變更動作條件之變更例之圖。於圖4上段之曲線圖,以粗實線表示設定溫度變更時所檢測出之熱處理板10之溫度變化。又,以單點鏈線表示對應於該設定溫度變更而預先規定之基準波形。於本例中,如基準波形所示,理想為自時間點t20至時間點t22進行設定溫度之變更。(3) Specific examples of changes to operating conditions
FIG. 4 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the
為了將變更動作條件進行變更,獲取時間點t20至時間點t22之期間內之預先規定之特定時間點(於本例中為時間點t20、t22之中間時間點)t21的熱處理板10之溫度變化率(於本例中為上升速度)。將所獲取之變化率與特定時間點t21之基準波形之變化率進行對比。又,獲取特定時間點t21之熱處理板10之溫度值,將所獲取之溫度值與特定時間點t21之基準波形之溫度值進行對比。進而,獲取熱處理板10之溫度之過衝量OS。In order to change the changing operating conditions, the temperature change of the
於對比變化率之結果為,所獲取之變化率與基準波形之變化率之差量處於針對該變化率預先規定之容許範圍外之情形時,理想為將變更動作條件進行變更。因此,於變化率之差量處於容許範圍外,且所獲取之變化率之絕對值低於基準波形之變化率之絕對值之情形時,必須以使供給至熱處理板10之熱量變大之方式將變更動作條件進行變更。另一方面,於變化率之差量處於容許範圍外,且所獲取之變化率之絕對值高於基準波形之變化率之絕對值之情形時,必須以使供給至熱處理板10之熱量變小之方式將變更動作條件進行變更。When the result of comparing the rate of change is that the difference between the acquired rate of change and the rate of change of the reference waveform is outside the allowable range predetermined for the rate of change, it is ideal to change the changing operating conditions. Therefore, when the difference in the rate of change is outside the allowable range, and the obtained absolute value of the rate of change is lower than that of the reference waveform, it is necessary to increase the amount of heat supplied to the
又,於對比溫度值之結果為,所獲取之溫度值與基準波形之溫度值之差量處於針對該溫度值預先規定之容許範圍外之情形時,理想為將變更動作條件進行變更。因此,於溫度值之差量處於容許範圍外,且所獲取之溫度值低於基準波形之溫度值之情形時,必須以使供給至熱處理板10之熱量變大之方式將變更動作條件進行變更。另一方面,於溫度值之差量處於容許範圍外,且所獲取之溫度值高於基準波形之溫度值之情形時,必須以使供給至熱處理板10之熱量變小之方式將變更動作條件進行變更。In addition, when the result of comparing the temperature values is that the difference between the acquired temperature value and the temperature value of the reference waveform is outside the allowable range predetermined for the temperature value, it is ideal to change the changing operating conditions. Therefore, when the difference in temperature value is outside the allowable range, and the acquired temperature value is lower than the temperature value of the reference waveform, the changing operating conditions must be changed in such a way that the heat supplied to the
進而,於所獲取之過衝量OS超過針對過衝量預先規定之容許範圍之情形時,理想為將變更動作條件進行變更。因此,於過衝量OS超過容許範圍之情形時,必須以使供給至熱處理板10之熱量變小之方式將變更動作條件進行變更。Furthermore, when the acquired overshoot amount OS exceeds the allowable range predetermined for the overshoot amount, it is desirable to change the change operation condition. Therefore, when the overshoot amount OS exceeds the allowable range, it is necessary to change the changing operating conditions so that the amount of heat supplied to the
於圖4之中段,表示按照預先設定之變更動作條件之中間加熱器12之狀態。於本例中,中間加熱器12自時間點t20至時間點t22維持為接通狀態。於要減少供給至熱處理板10之熱量之情形時,只要如圖4中之中空箭頭a11所示,藉由變更加熱停止參數之值,而使將中間加熱器12切換成斷開狀態之時序提前即可。另一方面,於要增加供給至熱處理板10之熱量之情形時,只要如圖4中之中空箭頭a12所示,藉由變更加熱停止參數之值,而使將中間加熱器12切換成斷開狀態之時序延遲即可。The middle section of FIG. 4 shows the state of the
於圖4之下段,表示按照預先設定之變更動作條件之主加熱器11之輸出波形。於本例中,主加熱器11從時間點t20起為了使熱處理板10之溫度上升而使輸出增大。其後,藉由按變更動作條件之PID控制,根據熱處理板10之溫度而調整輸出。於要減少供給至熱處理板10之熱量之情形時,只要如圖4中之中空箭頭a13所示,例如藉由變更PID控制之比例參數使其變大,而使主加熱器11之輸出波形整體變低即可。或者,只要如圖4中之中空箭頭a14所示,例如藉由變更上限參數使其變小,而使主加熱器11之輸出之上限變低即可。In the lower part of Fig. 4, the output waveform of the
另一方面,於要增加供給至熱處理板10之熱量之情形時,只要如圖4中之中空箭頭a15所示,例如藉由變更PID控制之比例參數使其變小,而使主加熱器11之輸出波形整體變高即可。或者,只要如圖4中之中空箭頭a16所示,例如藉由變更上限參數使其變大,而使主加熱器11之輸出之上限變高即可。On the other hand, when the amount of heat supplied to the
圖5係用以說明用於使熱處理板10之溫度從較高之開始溫度ST下降至較低之目標溫度TT的變更動作條件之變更例之圖。於圖5上段之曲線圖中,與圖4之例同樣地,以粗實線表示設定溫度變更時所檢測出之熱處理板10之溫度變化。又,以單點鏈線表示對應於該設定溫度變更而預先規定之基準波形。於本例中,如基準波形所示,理想為自時間點t30至時間點t32進行熱處理板10之溫度變更。FIG. 5 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the
為了將變更動作條件進行變更,獲取時間點t30至時間點t32之期間內之預先規定之特定時間點(於本例中為時間點t30、t32之中間時間點)t31的熱處理板10之溫度變化率(於本例中為下降速度)。將所獲取之變化率與特定時間點t31之基準波形之變化率進行對比。又,獲取特定時間點t31之熱處理板10之溫度值,將所獲取之溫度值與特定時間點t31之基準波形之溫度值進行對比。進而,獲取熱處理板10之溫度之下衝量US。In order to change the operating conditions, the temperature change of the
變化率對比之結果,若變化率之差量處於容許範圍外、且所獲取之變化率之絕對值低於基準波形之變化率之絕對值,必須以增大從熱處理板10去除之熱量之方式,將變更動作條件進行變更。另一方面,若變化率之差量處於容許範圍外、且所獲取之變化率之絕對值高於基準波形之變化率之絕對值,則必須以減小從熱處理板10去除之熱量之方式,將變更動作條件進行變更。As a result of the comparison of the rate of change, if the difference of the rate of change is outside the allowable range and the absolute value of the obtained rate of change is lower than the absolute value of the rate of change of the reference waveform, the heat removal from the
又,溫度值對比之結果,若溫度值之差量處於容許範圍外、且所獲取之溫度值低於基準波形之溫度值,必須以減小從熱處理板10去除之熱量之方式,將變更動作條件進行變更。另一方面,若溫度值之差量處於容許範圍外、且所獲取之溫度值高於基準波形之溫度值,則必須以增大從熱處理板10去除之熱量之方式,將變更動作條件進行變更。In addition, as a result of the temperature value comparison, if the temperature difference is outside the allowable range and the acquired temperature value is lower than the temperature value of the reference waveform, the action must be changed by reducing the amount of heat removed from the
進而,於所獲取之下衝量US超過針對下衝量預先規定之容許範圍之情形時,理想為將變更動作條件進行變更。因此,於下衝量US超過容許範圍之情形時,必須以減小從熱處理板10去除之熱量之方式,將變更動作條件進行變更。Furthermore, when the acquired undershoot amount US exceeds a predetermined allowable range for the undershoot amount, it is desirable to change the changing operating conditions. Therefore, when the undershoot amount US exceeds the allowable range, it is necessary to change the operating conditions by reducing the amount of heat removed from the
於圖5之中段,表示按照預先設定之變更動作條件之被動冷卻板30之狀態。於本例中,被動冷卻板30自時間點t30至時間點t32維持在接觸狀態。於要減少從熱處理板10去除之熱量之情形時,只要如圖5中之中空箭頭a21所示,藉由變更冷卻停止參數之值,而使將被動冷卻板30切換成非接觸狀態之時序提前即可。另一方面,於要增大從熱處理板10去除之熱量之情形時,只要如圖5中之中空箭頭a22所示,藉由變更冷卻停止參數之值,而使將被動冷卻板30切換成非接觸狀態之時序延遲即可。In the middle section of FIG. 5, the state of the
於圖5之下段,表示按照預先設定之變更動作條件之主加熱器11之輸出波形。於本例中,主加熱器11從時間點t30起為了使熱處理板10之溫度下降而使輸出降低。其後,藉由按變更動作條件之PID控制,根據熱處理板10之溫度而調整輸出。於要減少供給至熱處理板10之熱量之情形時,只要如圖5中之中空箭頭a23所示,例如藉由變更PID控制之比例參數使其變大,而使主加熱器11之輸出波形整體變低即可。In the lower part of Fig. 5, the output waveform of the
另一方面,於要增加供給至熱處理板10之熱量之情形時,只要如圖5中之中空箭頭a24所示,例如藉由變更PID控制之比例參數使其變小,而使主加熱器11之輸出波形整體變高即可。On the other hand, when the amount of heat supplied to the
圖6係用以說明關於設定溫度變更之實驗結果之圖。本發明者藉由基於圖3之變更動作條件使熱處理裝置100動作,而將熱處理板10之設定溫度從90℃變更至140℃。其結果,如圖6上段中之粗實線所示,熱處理板10之溫度沿著單點鏈線所示之基準波形,於時間點t40至時間點t41之期間內基本以固定速度上升。然而,於時間點t41以後,產生相對較大之過沖。Fig. 6 is a graph used to illustrate the experimental results of setting temperature changes. The inventor of the present invention changed the set temperature of the
因此,本發明者如圖6之中段所示,將對應於從圖3之開始溫度90℃向目標溫度140℃之變更的變更動作條件中之加熱停止參數之值從「1」變更為「5」。該變更意味著於為了使熱處理板10之溫度上升而將中間加熱器12設為接通狀態之後,使將中間加熱器12切換成斷開狀態之時序提前。Therefore, the inventor of the present invention, as shown in the middle section of FIG. 6, changed the value of the heating stop parameter in the change operation condition corresponding to the change from the starting temperature of 90°C to the target temperature of 140°C in FIG. 3 from "1" to "5" ". This change means that after the
其後,藉由基於變更後之變更動作條件,使熱處理裝置100再次動作,而將熱處理板10之設定溫度從90℃變更至140℃。其結果,如圖6之下段所示,熱處理板10之溫度沿著基準波形變化,過衝量降低。Thereafter, by operating the
(4)控制裝置50
如圖1所示,控制裝置50具有記憶部51、發熱控制部52、冷卻控制部53、升降控制部54、溫度獲取部55及條件變更部56作為功能部。控制裝置50包含CPU(Central Processing Unit,中央處理單元)(中央運算處理裝置)、RAM(Random Access Memory,隨機存取記憶體)及ROM(Read Only Memory,唯讀記憶體)。藉由CPU執行ROM或其他記憶媒體中所記憶之電腦程式,而實現上述各功能部。再者,亦可藉由電子電路等硬體實現控制裝置50之功能性構成要素之一部分或全部。(4)
記憶部51記憶針對複數個設定溫度中之每2個設定溫度之組合所設定之複數個變更動作條件。發熱控制部52以如下方式對發熱驅動部13進行控制,即,於使熱處理板10之設定溫度上升時所進行之變更時,按照記憶部51中所記憶之變更動作條件而動作。冷卻控制部53以如下方式對冷卻驅動部22進行控制,即,於熱處理裝置100之電源接通之期間內,將主動冷卻板20冷卻。升降控制部54以如下方式對升降裝置40進行控制,即,於使熱處理板10之設定溫度下降時所進行之變更時,按照記憶部51中所記憶之變更動作條件而動作。The
溫度獲取部55基於從溫度感測器19輸出之檢測信號,獲取設定溫度變更時之熱處理板10之溫度。更具體而言,溫度獲取部55藉由以固定週期對從溫度感測器19輸出之檢測信號進行取樣,而獲取溫度變化。The
條件變更部56以如下方式變更記憶部51中所記憶之變更動作條件,即,於變更熱處理板10之設定溫度時藉由溫度感測器19檢測而獲取之溫度變化接近預先規定之基準波形。The
再者,熱處理裝置100具備未圖示之操作部。使用者可藉由對操作部進行操作,而將初始變更動作條件記憶至記憶部51中。即,使用者能進行初始變更動作條件之設定。Furthermore, the
(5)設定溫度變更處理
伴隨變更動作條件之變更之熱處理裝置100之動作係藉由圖1之控制裝置50執行下述設定溫度變更處理而進行。圖7係表示圖1之控制裝置50中所執行之設定溫度變更處理之一例之流程圖。於以下之說明中,將過衝量及下衝量統稱為衝量。設定溫度變更處理係藉由將熱處理裝置100之電源接通而開始。(5) Set temperature change processing
The operation of the
首先,圖1之發熱控制部52及升降控制部54判定是否應變更熱處理板10之設定溫度(步驟S11)。該判定例如基於發熱控制部52及升降控制部54中之任一者是否已從熱處理裝置100外部接收到指示設定溫度變更之信號而進行。First, the heat
於不應變更設定溫度之情形時,發熱控制部52及升降控制部54返回至步驟S11之處理。另一方面,於應變更設定溫度之情形時,發熱控制部52或升降控制部54從圖1之記憶部51讀取與該設定溫度變更對應之變更動作條件(步驟S12)。When the set temperature should not be changed, the
其次,發熱控制部52或升降控制部54藉由基於該變更動作條件對發熱驅動部13或升降驅動部41進行控制,而調整熱處理板10之溫度(步驟S13)。溫度獲取部55獲取變更熱處理板10之設定溫度時之熱處理板10之溫度變化(步驟S14)。Next, the heat
當熱處理板10之設定溫度變更完成時,條件變更部56基於所獲取之溫度變化,判定設定溫度變更中之特定時間點之溫度變化率是否處於預先規定之容許範圍外(步驟S15)。When the set temperature change of the
於溫度變化率偏離容許範圍之情形時,條件變更部56基於所獲取之溫度變化,算出特定時間點之所獲取之溫度變化率與基準波形之變化率的差量(步驟S16)。另一方面,於溫度變化率處於容許範圍內之情形時,條件變更部56基於所獲取之溫度變化,判定設定溫度變更中之特定時間點之溫度值是否處於預先規定之容許範圍外(步驟S17)。When the temperature change rate deviates from the allowable range, the
於溫度值偏離容許範圍之情形時,條件變更部56基於所獲取之溫度變化,算出特定時間點之所獲取之溫度值與基準波形之溫度值的差量(步驟S18)。另一方面,於溫度值處於容許範圍內之情形時,條件變更部56基於所獲取之溫度變化,判定設定溫度之變更中所產生之衝量是否處於預先規定之容許範圍外(步驟S19)。When the temperature value deviates from the allowable range, the
於衝量偏離容許範圍之情形時,條件變更部56基於所獲取之溫度變化,算出所獲取之衝量與基準波形之衝量之差量(步驟S20)。另一方面,於衝量處於容許範圍內之情形時,發熱控制部52及升降控制部54返回至步驟S11之處理。When the impulse deviates from the allowable range, the
於上述步驟S16、S18、S20之處理後,條件變更部56基於所算出之變化率、溫度值或衝量之差量,決定變更動作條件中之應變更之參數(步驟S21)。例如,條件變更部56根據所算出之差量之級別,決定應變更之參數。具體而言,條件變更部56於差量之級別較高之情形時,將加熱停止參數或冷卻停止參數決定為應變更之參數。又,條件變更部56於差量之級別為中等程度之情形時,將PID控制之比例參數決定為應變更之參數。進而,條件變更部56於差量之級別較低之情形時,將上限參數決定為應變更之參數。After the processing of the above steps S16, S18, and S20, the
其次,條件變更部56針對所決定之參數,按照預先規定之方法變更該參數(步驟S22)。例如,條件變更部56針對所決定之參數,變更預先規定之值之量之參數。其後,發熱控制部52及升降控制部54返回至步驟S11之處理。Next, the
於上述設定溫度變更處理中,亦可省略步驟S15、S17、S19中之一部分處理。於該情形時,所省略之處理附帶之差量之算出處理亦被省略。In the above-mentioned set temperature change processing, part of the processing in steps S15, S17, and S19 may also be omitted. In this case, the calculation processing of the difference accompanying the omitted processing is also omitted.
(6)效果
如上所述,熱處理裝置100於使熱處理板10從一設定溫度變更至另一設定溫度時,按照記憶部51中所記憶之變更動作條件而動作。此時,檢測熱處理板10之溫度變化,以所檢測出之溫度變化接近與從該一設定溫度向另一設定溫度之變更對應的基準波形之方式,將變更動作條件進行變更。(6) Effect
As described above, when the
藉此,於將熱處理板10之溫度從一設定溫度再次變更至另一設定溫度時,熱處理裝置100按照前一次溫度變更時所變更後之變更動作條件而動作。藉此,熱處理板10之溫度變化與前一次設定溫度變更時相比更接近基準波形。Thereby, when the temperature of the
如此,每當進行熱處理板10之設定溫度變更時,都對設定溫度變更時之熱處理板10之溫度變化逐次適當地進行修正。因而,能適當地縮短伴隨基板W之熱處理溫度變更所產生之熱處理裝置100之調整時間。其等之結果,能抑制伴隨熱處理溫度之變更所產生之熱處理效率降低。In this way, whenever the set temperature of the
(7)具備圖1之熱處理裝置100之基板處理裝置
圖8係表示具備圖1之熱處理裝置100之基板處理裝置之一例之模式性方塊圖。如圖8所示,基板處理裝置400與曝光裝置500鄰接地設置,具備控制部410、塗佈處理部420、顯影處理部430、熱處理部440及基板搬送裝置450。熱處理部440包含對基板W進行加熱處理之複數個圖1之熱處理裝置100、及對基板W僅進行冷卻處理之複數個散熱板(cooling plate)(未圖示)。(7) A substrate processing apparatus equipped with the
控制部410例如包含CPU及記憶體、或微電腦,對塗佈處理部420、顯影處理部430、熱處理部440及基板搬送裝置450之動作進行控制。The
基板搬送裝置450於基板處理裝置400對基板W進行處理時,將基板W於塗佈處理部420、顯影處理部430、熱處理部440及曝光裝置500之間搬送。The
塗佈處理部420於未處理之基板W之一面上形成抗蝕劑膜(塗佈處理)。對形成有抗蝕劑膜之塗佈處理後之基板W,於曝光裝置500中進行曝光處理。顯影處理部430藉由對經曝光裝置500曝光處理後之基板W供給顯影液,而進行基板W之顯影處理。熱處理部440係於塗佈處理部420所進行之塗佈處理、顯影處理部430所進行之顯影處理、及曝光裝置500所進行之曝光處理之前後,進行基板W之熱處理。The
再者,塗佈處理部420亦可於基板W形成抗反射膜。於該情形時,於熱處理部440中亦可設置用以進行密接強化處理之處理單元,以提高基板W與抗反射膜之密接性。又,塗佈處理部420亦可於基板W上形成抗蝕劑覆蓋膜(resist cover film),用以保護形成於基板W上之抗蝕劑膜。Furthermore, the
如上所述,於熱處理部440之複數個熱處理裝置100中,進行上述設定溫度變更處理。藉此,於對複數個基板W以不同之設定溫度依序進行熱處理時,能於短時間內適當地調整熱處理板10之溫度。其結果,基板W之製造效率提高。As described above, in the plurality of
(8)其他實施形態
(a)於上述實施形態中,說明了具有對熱處理板10進行加熱之構成及使其冷卻之構成之熱處理裝置100,但本發明並不限定於此。熱處理裝置100亦可不具有使熱處理板10冷卻之構成(於上述例中為主動冷卻板20、被動冷卻板30及升降裝置40)。或者,熱處理裝置100亦可不具有對熱處理板10進行加熱之構成(於上述例中為主加熱器11及中間加熱器12)。於該情形時,亦能縮短使熱處理裝置100之設定溫度上升或下降時之調整所需之時間。(8) Other implementation forms
(a) In the above-mentioned embodiment, the
(b)於熱處理裝置100中,亦可將熱處理板10之上表面分別分割成複數個區域,並且以與各區域對應之方式設置用以對該部分進行加熱之構成。即,亦可針對熱處理板10之複數個區域各者,設置主加熱器11、中間加熱器12及發熱驅動部13。或者,亦可針對熱處理板10之複數個區域各者設置主加熱器11及中間加熱器12,且構成為將發熱驅動部13與複數個主加熱器11及中間加熱器12分開地驅動。(b) In the
於該情形時,於記憶部51中,亦可針對熱處理板10之複數個區域之各者,記憶變更動作條件。又,條件變更部56例如亦可以設定溫度變更時之熱處理板10之複數個區域之溫度變化接近基準波形之方式,變更與所有區域分別對應之變更動作條件之複數個參數。根據此種構成,能對熱處理板10上表面之複數個區域進行更詳細之溫度調整。再者,於本例中,亦可將針對複數個區域中之一個區域於設定溫度變更時所獲取之溫度變化設為基準波形。In this case, in the
(c)於上述實施形態中,於熱處理板10中設置有主加熱器11及中間加熱器12,但本發明並不限定於此。於主加熱器11構成為能夠使熱處理板10之溫度在短時間內上升之情形時,亦可不設置中間加熱器12。(c) In the above-mentioned embodiment, the
(9)技術方案之各構成要素與實施形態之各要素之對應關係
以下,對技術方案之各構成要素與實施形態之各要素之對應之例進行說明。於上述實施形態中,熱處理裝置100為熱處理裝置之例,熱處理板10為板構件之例,主加熱器11、中間加熱器12、發熱驅動部13、主動冷卻板20、被動冷卻板30及升降裝置40為熱處理部之例,記憶部51為記憶部之例,發熱控制部52、冷卻控制部53及升降控制部54為動作控制部之例,溫度感測器19為溫度檢測器之例,溫度獲取部55及條件變更部56為條件變更部之例。(9) Correspondence between each component of the technical plan and each element of the implementation form
Hereinafter, an example of the correspondence between each component of the technical solution and each element of the embodiment will be described. In the above embodiment, the
又,於上述實施形態中,中間加熱器12處於接通狀態或被動冷卻板30處於接觸狀態係熱處理部處於第1狀態之例。又,中間加熱器12處於斷開狀態且被動冷卻板30處於非接觸狀態係熱處理部處於第2狀態之例。In addition, in the above-mentioned embodiment, the
作為技術方案之各構成要素,亦可使用具有技術方案中所記載之構成或功能之其他各種要素。As each component of the technical solution, various other elements having the configuration or function described in the technical solution can also be used.
10:熱處理板 11:主加熱器 12:中間加熱器 13:發熱驅動部 19:溫度感測器 20:主動冷卻板 21:冷卻機構 22:冷卻驅動部 30:被動冷卻板 40:升降裝置 41:升降驅動部 50:控制裝置 51:記憶部 52:發熱控制部 53:冷卻控制部 54:升降控制部 55:溫度獲取部 56:條件變更部 100:熱處理裝置 400:基板處理裝置 410:控制部 420:塗佈處理部 430:顯影處理部 440:熱處理部 450:基板搬送裝置 500:曝光裝置 W:基板10: Heat treatment board 11: Main heater 12: Intermediate heater 13: Heating drive part 19: Temperature sensor 20: Active cooling plate 21: Cooling mechanism 22: Cooling drive part 30: Passive cooling plate 40: Lifting device 41: Lifting drive 50: control device 51: Memory Department 52: Heat control section 53: Cooling Control Department 54: Lifting control part 55: Temperature Acquisition Department 56: Condition Change Department 100: Heat treatment device 400: Substrate processing device 410: Control Department 420: Coating Processing Department 430: Development Department 440: Heat Treatment Department 450: substrate transfer device 500: Exposure device W: substrate
圖1係表示本發明之一實施形態之熱處理裝置之構成的模式性側視圖。 圖2係表示對複數個基板依序進行加熱處理之情形時之熱處理板之溫度變化之一例的圖。 圖3係表示針對複數個設定溫度中之每2個設定溫度之組合而設定之變更動作條件之一例的圖。 圖4係用以說明用於使熱處理板之溫度從較低之開始溫度上升至較高之目標溫度的變更動作條件之變更例之圖。 圖5係用以說明用於使熱處理板之溫度從較高之開始溫度下降至較低之目標溫度的變更動作條件之變更例之圖。 圖6係用以說明設定溫度變更相關之實驗結果之圖。 圖7係表示圖1之控制裝置中所執行之設定溫度變更處理之一例之流程圖。 圖8係表示具備圖1之熱處理裝置之基板處理裝置之一例的模式性方塊圖。Fig. 1 is a schematic side view showing the structure of a heat treatment apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing an example of the temperature change of the heat-treated plate when heat treatment is sequentially performed on a plurality of substrates. Fig. 3 is a diagram showing an example of changing operating conditions set for every combination of two set temperatures among a plurality of set temperatures. Fig. 4 is a diagram for explaining a modification example of the modification operation condition for increasing the temperature of the heat treatment plate from a lower starting temperature to a higher target temperature. Fig. 5 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the heat treatment plate from a higher starting temperature to a lower target temperature. Fig. 6 is a diagram used to illustrate the experimental results related to setting temperature changes. Fig. 7 is a flowchart showing an example of the set temperature change processing executed in the control device of Fig. 1. Fig. 8 is a schematic block diagram showing an example of a substrate processing apparatus equipped with the heat treatment apparatus of Fig. 1.
10:熱處理板 10: Heat treatment plate
11:主加熱器 11: Main heater
12:中間加熱器 12: Intermediate heater
13:發熱驅動部 13: Heating drive part
19:溫度感測器 19: Temperature sensor
20:主動冷卻板 20: Active cooling plate
21:冷卻機構 21: Cooling mechanism
22:冷卻驅動部 22: Cooling drive unit
30:被動冷卻板 30: Passive cooling plate
40:升降裝置 40: Lifting device
41:升降驅動部 41: Lifting drive
50:控制裝置 50: control device
51:記憶部 51: Memory Department
52:發熱控制部 52: Heat control section
53:冷卻控制部 53: Cooling Control Department
54:升降控制部 54: Lifting control part
55:溫度獲取部 55: Temperature Acquisition Department
56:條件變更部 56: Condition Change Department
100:熱處理裝置 100: Heat treatment device
W:基板 W: substrate
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