TW202040691A - Thermal processing apparatus and thermal processing method - Google Patents

Abstract

In this heat treatment device, heat treatment is performed on a substrate by placing the substrate on a heat treatment plate held at a set temperature. Change operation conditions of the heat treatment device when changing the set temperature of the heat treatment plate are stored in advance in a storage unit. When the set temperature is changed, a main heater and a booster heater are operated according to the stored change operation conditions. At this time, a temperature change in the heat treatment plate is detected, and the change operation conditions stored in the storage unit are changed so that the detected temperature change approaches a predetermined reference waveform.

Description

Heat treatment device and heat treatment method

The invention relates to a heat treatment device and a heat treatment method for heat treatment of a substrate.

In the past, in order to provide substrates for FPD (Flat Panel Display), semiconductor substrates, optical disk substrates, magnetic disk substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, etc. Various substrates such as magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates are heat-treated using heat treatment equipment.

In the heat treatment device, for example, the heat treatment is performed by supporting the substrate on a plate member maintained at a preset heat treatment temperature for a predetermined time. In the case of sequentially performing heat treatment on a plurality of substrates, it is not limited to setting a common heat treatment temperature for the plurality of substrates. When setting different heat treatment temperatures for two substrates that are sequentially heat-treated, the temperature of the plate member must be changed after the heat treatment of one substrate and before the heat treatment of the other substrate.

The temperature of the plate member can be changed by various methods. For example, in the temperature changing system described in Patent Document 1, by adjusting the driving state of the heater layer included in the baking plate portion (plate member), the temperature of the baking plate portion can be increased or decreased. Furthermore, in the temperature changing system, the passive cooling plate cooled by the active cooling plate is brought into contact with the baking plate portion via the thermal pad, thereby greatly reducing the temperature of the baking plate portion.

[Patent Document 1] Japanese Patent No. 5658083

[The problem to be solved by the invention]

Generally, in a heat treatment device, the operating conditions for changing the temperature of the plate member are predetermined based on the two temperatures before and after the change. However, depending on the temperature of the space in which the heat treatment device is installed or the individual difference of the heat treatment device, even if the heat treatment device is operated under predetermined operating conditions, it may be difficult to perform accurate temperature changes. In this case, if fine adjustments are repeatedly performed in order to accurately change the temperature of the plate member, the time required for the temperature change becomes longer, and the heat treatment efficiency decreases.

The object of the present invention is to provide a heat treatment device and a heat treatment method that can suppress the reduction in heat treatment efficiency caused by the change of the heat treatment temperature. [Technical means to solve the problem]

(1) A heat treatment device of one aspect of the present invention is a device for heat treatment of a substrate, and includes: a plate member on which the substrate is placed; a heat treatment section that heats the substrate placed on the plate member through the plate member; and memory; Section, which memorizes the operating conditions of the heat treatment section when the temperature of the plate member is changed from the set first temperature to the set second temperature; the action control section causes the heat treatment section to change according to the operating conditions memorized in the memory section Action; temperature detector, which detects the temperature of the plate member; and condition change section, which changes the memory in such a way that the temperature change detected by the temperature detector when the heat treatment section operates according to the operating conditions is close to a predetermined reference waveform The operating conditions of the memory in the department.

In this heat treatment apparatus, by placing the substrate on the plate member adjusted to the first temperature, the placed substrate is heat treated. Or, by placing the substrate on a plate member adjusted to the second temperature, the placed substrate is heat-treated. By sequentially performing heat treatment on the plurality of substrates, the heat treatment corresponding to the first temperature and the heat treatment corresponding to the second temperature are sequentially performed. In this case, it is necessary to change the temperature of the plate member from the first temperature to the second temperature after the heat treatment corresponding to the first temperature and before the heat treatment corresponding to the second temperature.

When the temperature of the plate member is changed from the first temperature to the second temperature, the heat treatment section operates according to the operating conditions memorized in the memory section. At this time, the temperature change of the detection plate member changes the operating conditions stored in the memory unit in such a way that the detected temperature change approaches the reference waveform.

When the temperature of the plate member is changed from the first temperature to the second temperature again by sequentially processing a plurality of substrates, the heat treatment section operates according to the operating conditions changed in the previous temperature change. Thereby, the temperature change of the plate member from the first temperature to the second temperature is closer to the reference waveform than at the time of the previous temperature change.

In this way, by changing the operating conditions every time the temperature of the plate member is changed from the first temperature to the second temperature, the temperature of the plate member when the temperature is changed from the first temperature to the second temperature is appropriately corrected successively Variety. Therefore, it is possible to appropriately shorten the adjustment time of the heat treatment device accompanying the change of the heat treatment temperature of the substrate. As a result, it is possible to suppress a decrease in the heat treatment efficiency accompanying the change of the heat treatment temperature.

(2) It can also be that the operating condition includes the value of one or more control parameters, and the condition changing unit changes at least one or more of the control parameters stored in the memory unit in such a way that the detected temperature change is close to the reference waveform The value of 1.

In this case, the temperature change of the plate member from the first temperature to the second temperature can be adjusted by simple processing of changing the value of at least one of one or a plurality of control parameters.

(3) It is also possible that the heat treatment section is configured to be able to switch to the first state of heating or cooling the plate member and the second state of not heating or cooling the plate member. One or more control parameters may also include the heat treatment section The switching sequence of the first and second states.

In this case, by changing the switching sequence of the first and second states of the heat treatment section, the temperature change of the plate member from the first temperature to the second temperature can be greatly adjusted.

(4) It is also possible that the heat treatment part is configured to be capable of PID control, and one or more control parameters include proportional parameters, integral parameters and differentials for PID control to change the temperature of the plate member from the first temperature to the second temperature At least one of the parameters.

In this case, by changing at least one of the proportional parameter, the integral parameter, and the derivative parameter, the temperature change of the plate member from the first temperature to the second temperature can be adjusted.

(5) It can also be that one or more control parameters include the upper limit of the output of the heat treatment section.

In this case, by changing the upper limit of the output of the heat treatment unit, the temperature change of the plate member from the first temperature to the second temperature can be finely adjusted.

(6) It is also possible that the condition changing unit changes the operating conditions in the following manner, that is, the temperature detected by the temperature detector at a specific time point during the period when the temperature of the plate member changes from the first temperature to the second temperature The rate of change is close to the rate of temperature change of the part of the reference waveform corresponding to a specific time point.

In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the temperature change rate of the plate member.

(7) The condition changing unit can also change the operating conditions in the following manner, that is, the value of the temperature detected by the temperature detector at a specific time point during the period when the temperature of the plate member changes from the first temperature to the second temperature, The value close to the temperature of the part of the reference waveform corresponding to a specific time point.

In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the value of the temperature of the plate member.

(8) The condition changing unit may change the operating conditions in such a way that the amount of overshoot or undershoot relative to the second temperature generated in the waveform of the detected temperature becomes smaller.

In this case, the temperature change of the plate member from the first temperature to the second temperature can be appropriately adjusted based on the amount of overshoot or undershoot relative to the second temperature.

(9) The heat treatment method of another aspect of the present invention is one that heat-treats a substrate, and includes the steps of: placing the substrate on a plate member; and performing the heat treatment on the placed substrate through the plate member. Heat treatment; the operating conditions of the heat treatment section when the temperature of the plate member is changed from the set first temperature to the set second temperature is stored in the memory section; the heat treatment section operates according to the operating conditions memorized in the memory section; The temperature of the plate member is detected by the temperature detector; and the operating condition stored in the memory portion is changed in such a way that the temperature change detected by the temperature detector is close to a predetermined reference waveform when the heat treatment portion operates according to the operating condition.

In this heat treatment method, by placing the substrate on a plate member adjusted to the first temperature, the placed substrate is heat treated. Alternatively, by placing the substrate on a plate member adjusted to the second temperature, the placed substrate is heat-treated. By sequentially performing heat treatment on the plurality of substrates, the heat treatment corresponding to the first temperature and the heat treatment corresponding to the second temperature are sequentially performed. In this case, it is necessary to change the temperature of the plate member from the first temperature to the second temperature after the heat treatment corresponding to the first temperature and before the heat treatment corresponding to the second temperature.

When the temperature of the plate member is changed from the first temperature to the second temperature, the heat treatment section operates according to the operating conditions memorized in the memory section. At this time, the temperature change of the detection plate member changes the operating conditions stored in the memory unit in such a way that the detected temperature change approaches the reference waveform.

When the temperature of the plate member is changed from the first temperature to the second temperature again by sequentially processing a plurality of substrates, the heat treatment section operates according to the changed operating conditions during the previous temperature change. Thereby, the temperature change of the plate member from the first temperature to the second temperature is closer to the reference waveform than at the time of the previous temperature change.

In this way, by changing the operating conditions every time the temperature of the plate member is changed from the first temperature to the second temperature, the temperature of the plate member when the temperature is changed from the first temperature to the second temperature is appropriately corrected successively Variety. Therefore, it is possible to appropriately shorten the adjustment time of the heat treatment device accompanying the change of the heat treatment temperature of the substrate. As a result, it is possible to suppress a decrease in the heat treatment efficiency accompanying the change of the heat treatment temperature.

(10) It can also be that the operating condition includes the value of one or more control parameters, and the step of changing the operating condition includes: changing one or more of the memory in the memory unit in such a way that the detected temperature change is close to the reference waveform The value of at least one of the control parameters.

In this case, the temperature change of the plate member from the first temperature to the second temperature can be adjusted by a simple process of changing the value of at least one of one or a plurality of control parameters. [Effects of Invention]

According to the present invention, it is possible to suppress a decrease in heat treatment efficiency caused by a change in the heat treatment temperature.

Hereinafter, the heat treatment apparatus and heat treatment method of the embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to FPD (Flat Panel Display) substrates, semiconductor substrates, optical disk substrates, and magnetic substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Substrates for discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. In the following description, as an example of a heat treatment device, a heat treatment device that heats a substrate will be described.

(1) Composition of heat treatment device Fig. 1 is a schematic side view showing the structure of a heat treatment apparatus according to an embodiment of the present invention. As shown in FIG. 1, the heat treatment device 100 includes a heat treatment plate 10, an active cooling plate 20, a passive cooling plate 30, a lifting device 40 and a control device 50.

The heat treatment plate 10 is a metal heat transfer plate with a flat cylindrical shape, and has a flat upper surface and a lower surface. The upper surface of the heat treatment plate 10 has an outer diameter larger than the outer diameter of the substrate W to be the heat treatment target. On the upper surface of the heat-treated plate 10, a plurality of proximity balls and the like supporting the lower surface of the substrate W are provided. In FIG. 1, a single-dot chain line indicates the substrate W placed on the heat treatment plate 10.

The heat treatment plate 10 is provided with a main heater 11, a booster heater 12 and a temperature sensor 19. The temperature sensor 19 detects the temperature of the upper surface of the heat treatment plate 10, and outputs a detection signal corresponding to the detected temperature to the temperature acquisition unit 55 described below.

Each of the main heater 11 and the intermediate heater 12 is constituted by, for example, a mica heater or a Peltier element. The main heater 11 and the intermediate heater 12 are connected to a heat generating drive unit 13. The heat-generating drive unit 13 drives the main heater 11 to maintain the temperature of the heat treatment plate 10 at a preset temperature (set temperature), for example. In addition, the heating drive unit 13 drives the intermediate heater 12 such that the temperature of the heat treatment plate 10 rises in a short time, for example.

The active cooling plate 20 is arranged at a position lower than the heat treatment plate 10 and spaced a predetermined distance from the lower surface of the heat treatment plate 10. The active cooling plate 20 has an upper surface facing the heat treatment plate 10. On the upper surface of the active cooling plate 20, a thermally conductive sheet (not shown) with higher thermal conductivity is provided.

A cooling mechanism 21 is provided on the active cooling plate 20. The cooling mechanism 21 is composed of, for example, a cooling water passage or a Peltier element formed in the active cooling plate 20. The cooling drive unit 22 is connected to the cooling mechanism 21. The cooling driving part 22 drives the cooling mechanism 21 in such a way that the temperature of the upper surface of the active cooling plate 20 is lower than the temperature of the heat treatment plate 10.

The passive cooling plate 30 is in the space between the heat treatment plate 10 and the active cooling plate 20, and is supported by the lifting device 40 (refer to the hollow arrow in FIG. 1). The passive cooling plate 30 is a circular plate-shaped member made of metal and has an upper surface and a lower surface. The upper surface of the passive cooling plate 30 is opposite to the lower surface of the heat treatment plate 10, and the lower surface of the passive cooling plate 30 is opposite to the upper surface of the active cooling plate 20. On the upper surface of the passive cooling plate 30, a thermally conductive sheet (not shown) with higher thermal conductivity is provided.

The lifting device 40 includes, for example, an air cylinder. A lifting drive unit 41 is connected to the lifting device 40. The lifting driving part 41 drives the lifting device 40 in such a way that the passive cooling plate 30 is in contact with the active cooling plate 20, for example. In this case, the passive cooling plate 30 is cooled by the active cooling plate 20. In addition, the elevating drive unit 41 drives the elevating device 40 such that, for example, the passive cooling plate 30 is in contact with the heat treatment plate 10. In this case, the heat treatment plate 10 is cooled by the passive cooling plate 30.

The control device 50 controls the operation of each component of the heat treatment device 100 including the heat generating drive unit 13, the cooling drive unit 22, and the elevation drive unit 41. The details of the control device 50 will be described below. Furthermore, the heat treatment apparatus 100 is further provided with a transfer mechanism (not shown), which is used to transfer the substrate W between the heat treatment plate 10 and an external device (such as a transfer robot) of the heat treatment apparatus 100 .

(2) Heat treatment of multiple substrates W in the heat treatment device 100 In the heat treatment apparatus 100 of FIG. 1, a plurality of substrates W are sequentially heated at a set temperature corresponding to the content of each heat treatment. FIG. 2 is a diagram showing an example of the temperature change of the heat treatment plate 10 when a plurality of substrates W are sequentially heated.

In the graph shown in FIG. 2, the vertical axis represents the temperature of the heat-treated plate 10, and the horizontal axis represents time. In addition, the temperature change of the heat-treated plate 10 is indicated by a thick solid line. In this example, for 28 substrates W, the content of the heat treatment is changed in units of 4 substrates W. Therefore, the set temperature of the heat treatment plate 10 is changed in units of four substrates W.

Specifically, during each of the period from time t1 to t2, the period from time t5 to t6, and the period from time t13 to t14, the substrate W is performed while maintaining the temperature of the heat treatment plate 10 at a set temperature of 90°C. The heat treatment. In addition, during the period from time point t3 to t4, the period from time point t7 to t8, and the period from time point t11 to t12, the heat treatment of the substrate W is performed while maintaining the temperature of the heat treatment plate 10 at the set temperature of 115°C . Furthermore, during the period from time t9 to t10, the heat treatment of the substrate W is performed while maintaining the temperature of the heat treatment plate 10 at a set temperature of 140°C.

When the unprocessed substrate W is placed on the heat treatment plate 10 maintained at a set temperature, for example, as shown by the hollow arrow in FIG. 2, the temperature of the heat treatment plate 10 decreases slightly. After that, the temperature of the heat treatment plate 10 is restored to the set temperature in a relatively short time by continuing to drive the main heater 11 of FIG. 1.

In the case where the temperature of the heat treatment plate 10 changes drastically as the set temperature is changed as surrounded by the single-point chain line in Fig. 2, it is difficult to perform the temperature in a short time by adjusting the output of the main heater 11 only. The circumstances of the change. Therefore, in this example, when the set temperature rises, the intermediate heater 12 is driven immediately after the change starts. Furthermore, based on the detection signal of the temperature sensor 19, PID (proportional integral derivative) control of the main heater 11 is performed. Furthermore, the upper limit of the output of the main heater 11 is adjusted. On the other hand, when the set temperature drops, the passive cooling plate 30 is used to cool the heat treatment plate 10 immediately after the change is started. Furthermore, based on the detection signal of the temperature sensor 19, PID control of the main heater 11 is performed.

When there are a plurality of preset temperatures, the operating conditions of the heat treatment device 100 for changing the temperature of the heat treatment plate 10 from one set temperature to another set temperature can be obtained by simulation or experiment. Therefore, in the heat treatment plate 10, for every combination of two set temperatures among a plurality of set temperatures, operating conditions when the set temperatures are changed (hereinafter referred to as changed operating conditions) are preset.

Fig. 3 is a diagram showing an example of changing operating conditions set for every combination of two set temperatures among a plurality of set temperatures. In the following description, the set temperature before the change is appropriately referred to as the starting temperature, and the set temperature after the change is appropriately referred to as the target temperature.

The changed operating conditions include the value of the heating stop parameter. The heating stop parameter is a control parameter of the intermediate heater 12, and indicates the temperature of the heat treatment plate 10 that should stop heating. In other words, the value of the heating stop parameter indicates the timing of switching from the on state where the intermediate heater 12 generates heat to the off state where the intermediate heater 12 does not generate heat when the set temperature is changed (when rising). In Figure 3, the heating stop parameter is described as "heating stop". The value of the heating stop parameter in Figure 3 is expressed as the value obtained by subtracting the temperature at which heating should be stopped from the target temperature.

In addition, the changed operating condition includes the value of the parameter for PID control of the main heater 11. In addition, the change operation condition includes the value of the upper limit parameter indicating the upper limit of the output of the main heater 11. In Figure 3, the upper limit parameter is described as "heater upper limit". The value of the upper limit parameter is expressed as a ratio (%) relative to the upper limit of the allowable output of the rated output of the main heater 11, for example.

Furthermore, the value of the cooling stop parameter is included in the changed operating condition. The cooling stop parameter is a control parameter of the lifting device 40, and represents the temperature of the heat treatment plate 10 that should stop cooling. In other words, the value of the cooling stop parameter indicates the timing of switching from the contact state of the passive cooling plate 30 with the heat treatment plate 10 to the non-contact state of the passive cooling plate 30 and the heat treatment plate 10 when the set temperature is changed (during falling). In Figure 3, the cooling stop parameter is described as "cooling stop". The value of the cooling stop parameter in FIG. 3 is expressed as the value obtained by subtracting the target temperature from the temperature of the heat treatment plate 10 whose cooling should be stopped.

According to the example in Fig. 3, the change operation conditions corresponding to the change from the starting temperature of 90°C to the target temperature of 115°C include the heating stop parameter "5", the proportional parameter "0.2", the integral parameter "15", the derivative parameter "3" and The upper limit parameter is "80" (%). In addition, the change operation conditions corresponding to the change from the starting temperature of 115°C to the target temperature of 90°C include the cooling stop parameter "5", the proportional parameter "0.2", the integral parameter "15", the derivative parameter "3" and the upper limit parameter "80" "(%).

However, according to the temperature of the space in which the heat treatment device 100 is installed or the individual difference of the heat treatment device 100, the preset changing operating conditions may not be appropriate. Therefore, in the present embodiment, whenever the set temperature of the heat treatment plate 10 is changed, the changing operating conditions are changed so that the temperature change of the heat treatment plate 10 at the time of the change is close to the ideal reference waveform. The ideal reference waveform is determined based on, for example, the composition of the heat treatment plate 10, the heating capacity of the main heater 11 and the intermediate heater 12, and the cooling capacity of the active cooling plate 20 and the passive cooling plate 30.

In the example of FIG. 2, for example, when the set temperature is changed during the time point t2～t3, when the temperature change of the heat treatment plate 10 produces a large overshoot, the overshoot is reduced in a way Change the operating conditions to make changes. Thereafter, when the set temperature is changed in the period from time t6 to t7, the heat treatment device 100 operates according to the changed operating conditions after the change. Thereby, the time required for the change of the set temperature is shortened compared to when the set temperature is changed during the period of time t2 to t3. Furthermore, when the set temperature is changed during the period from time t6 to t7, the operating conditions are changed in the same manner as when the set temperature is changed during the period from time t2 to t3. Thereby, when a change from the set temperature of 90°C to the set temperature of 115°C occurs at a time later than the time point t7, the time required for the change is further shortened.

In the example of FIG. 2, for example, when the set temperature is changed during the time point t4 to t5, the temperature change of the heat treatment plate 10 produces a large undershoot, so that the undershoot becomes smaller. The method will change the operating conditions. Thereafter, when the set temperature is changed during the period from time t12 to t13, the heat treatment device 100 operates according to the changed operating conditions after the change. Thereby, the time required for the change of the set temperature is shortened compared with the time of the change of the set temperature during the period of time t4 to t5. Furthermore, when the set temperature is changed in the period from time t12 to t13, the operating conditions are changed in the same way as when the set temperature is changed in the period from time t4 to t5. Thereby, when a change from the starting temperature of 115°C to the target temperature of 90°C occurs at a time later than the time point t13, the time required for the change is further shortened.

As described above, in the heat treatment apparatus 100, every time the set temperature of the heat treatment plate 10 is changed, the operating conditions are changed. Thereby, the time required to change the set temperature is sequentially shortened. As a result, it is possible to suppress a decrease in heat treatment efficiency caused by a change in the heat treatment temperature.

(3) Specific examples of changes to operating conditions FIG. 4 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the heat treatment plate 10 from a lower starting temperature ST to a higher target temperature TT. In the graph in the upper part of FIG. 4, the temperature change of the heat treatment plate 10 detected when the set temperature is changed is represented by a thick solid line. In addition, a single-dot chain line indicates a reference waveform predetermined in response to the change in the set temperature. In this example, as shown by the reference waveform, it is ideal to change the set temperature from time t20 to time t22.

In order to change the changing operating conditions, the temperature change of the heat treatment plate 10 at t21 is obtained at a predetermined specific time point (in this example, the intermediate time point between time points t20 and t22) from time t20 to time t22 Rate (in this case, the rate of increase). Compare the acquired rate of change with the rate of change of the reference waveform at a specific time point t21. Furthermore, the temperature value of the heat treatment plate 10 at a specific time point t21 is obtained, and the obtained temperature value is compared with the temperature value of the reference waveform at the specific time point t21. Furthermore, the overshoot OS of the temperature of the heat-treated plate 10 is obtained.

When the result of comparing the rate of change is that the difference between the acquired rate of change and the rate of change of the reference waveform is outside the allowable range predetermined for the rate of change, it is ideal to change the changing operating conditions. Therefore, when the difference in the rate of change is outside the allowable range, and the obtained absolute value of the rate of change is lower than that of the reference waveform, it is necessary to increase the amount of heat supplied to the heat treatment plate 10 The operating conditions will be changed. On the other hand, when the difference in the rate of change is outside the allowable range, and the obtained absolute value of the rate of change is higher than that of the reference waveform, the amount of heat supplied to the heat treatment plate 10 must be reduced The method will change the operating conditions.

In addition, when the result of comparing the temperature values is that the difference between the acquired temperature value and the temperature value of the reference waveform is outside the allowable range predetermined for the temperature value, it is ideal to change the changing operating conditions. Therefore, when the difference in temperature value is outside the allowable range, and the acquired temperature value is lower than the temperature value of the reference waveform, the changing operating conditions must be changed in such a way that the heat supplied to the heat treatment plate 10 becomes larger . On the other hand, when the difference in temperature value is outside the allowable range and the acquired temperature value is higher than the temperature value of the reference waveform, the operating conditions must be changed in such a way that the heat supplied to the heat treatment plate 10 is reduced Make changes.

Furthermore, when the acquired overshoot amount OS exceeds the allowable range predetermined for the overshoot amount, it is desirable to change the change operation condition. Therefore, when the overshoot amount OS exceeds the allowable range, it is necessary to change the changing operating conditions so that the amount of heat supplied to the heat treatment plate 10 is reduced.

The middle section of FIG. 4 shows the state of the intermediate heater 12 according to the preset changed operating conditions. In this example, the intermediate heater 12 is maintained in the on state from the time point t20 to the time point t22. In the case of reducing the amount of heat supplied to the heat treatment plate 10, as shown by the hollow arrow a11 in Fig. 4, by changing the value of the heating stop parameter, the timing of switching the intermediate heater 12 to the off state is advanced That's it. On the other hand, when the amount of heat supplied to the heat treatment plate 10 is to be increased, as shown by the hollow arrow a12 in FIG. 4, the intermediate heater 12 is switched off by changing the value of the heating stop parameter The timing of the state can be delayed.

In the lower part of Fig. 4, the output waveform of the main heater 11 according to the preset changed operating conditions is shown. In this example, the main heater 11 increases the output in order to increase the temperature of the heat treatment plate 10 from the time point t20. Thereafter, the output is adjusted according to the temperature of the heat treatment plate 10 by PID control that changes the operating conditions. In the case of reducing the amount of heat supplied to the heat treatment plate 10, as shown by the hollow arrow a13 in Fig. 4, for example, by changing the proportional parameter of PID control to make it larger, the output waveform of the main heater 11 can be made as a whole Just go low. Alternatively, as shown by the hollow arrow a14 in FIG. 4, the upper limit of the output of the main heater 11 may be lowered by, for example, changing the upper limit parameter to make it smaller.

On the other hand, when the amount of heat supplied to the heat treatment plate 10 is to be increased, as shown by the hollow arrow a15 in Fig. 4, for example, by changing the proportional parameter of PID control to make it smaller, the main heater 11 The overall output waveform can be increased. Alternatively, as shown by the hollow arrow a16 in FIG. 4, the upper limit of the output of the main heater 11 may be increased by, for example, changing the upper limit parameter to make it larger.

FIG. 5 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the heat treatment plate 10 from a higher starting temperature ST to a lower target temperature TT. In the graph in the upper part of FIG. 5, similar to the example of FIG. 4, the temperature change of the heat treatment plate 10 detected when the set temperature is changed is indicated by a thick solid line. In addition, a single-dot chain line indicates a predetermined reference waveform corresponding to the change in the set temperature. In this example, as shown by the reference waveform, it is ideal to change the temperature of the heat-treated plate 10 from time t30 to time t32.

In order to change the operating conditions, the temperature change of the heat treatment plate 10 at t31 is acquired at a predetermined specific time point (in this example, the intermediate time point between time points t30 and t32) from time t30 to time t32 Rate (in this case, the rate of descent). Compare the acquired rate of change with the rate of change of the reference waveform at a specific time point t31. In addition, the temperature value of the heat treatment plate 10 at a specific time point t31 is obtained, and the obtained temperature value is compared with the temperature value of the reference waveform at the specific time point t31. Furthermore, the under-temperature impulse US of the heat-treated plate 10 is obtained.

As a result of the comparison of the rate of change, if the difference of the rate of change is outside the allowable range and the absolute value of the obtained rate of change is lower than the absolute value of the rate of change of the reference waveform, the heat removal from the heat treatment plate 10 must be increased. To change the operating conditions. On the other hand, if the difference in the rate of change is outside the allowable range and the obtained absolute value of the rate of change is higher than that of the reference waveform, it is necessary to reduce the amount of heat removed from the heat treatment plate 10. The operating conditions will be changed.

In addition, as a result of the temperature value comparison, if the temperature difference is outside the allowable range and the acquired temperature value is lower than the temperature value of the reference waveform, the action must be changed by reducing the amount of heat removed from the heat treatment plate 10 The conditions are changed. On the other hand, if the difference in temperature value is outside the allowable range and the acquired temperature value is higher than the temperature value of the reference waveform, it is necessary to increase the amount of heat removed from the heat treatment plate 10 and change the operating conditions. .

Furthermore, when the acquired undershoot amount US exceeds a predetermined allowable range for the undershoot amount, it is desirable to change the changing operating conditions. Therefore, when the undershoot amount US exceeds the allowable range, it is necessary to change the operating conditions by reducing the amount of heat removed from the heat treatment plate 10.

In the middle section of FIG. 5, the state of the passive cooling plate 30 according to the preset changing operating conditions is shown. In this example, the passive cooling plate 30 is maintained in the contact state from time t30 to time t32. To reduce the amount of heat removed from the heat treatment plate 10, as shown by the hollow arrow a21 in Figure 5, by changing the value of the cooling stop parameter, the timing of switching the passive cooling plate 30 to the non-contact state is advanced OK. On the other hand, when the amount of heat removed from the heat treatment plate 10 is to be increased, as shown by the hollow arrow a22 in FIG. 5, the passive cooling plate 30 is switched to non-existent by changing the value of the cooling stop parameter. The timing of the contact state can be delayed.

In the lower part of Fig. 5, the output waveform of the main heater 11 according to the preset changed operating conditions is shown. In this example, the output of the main heater 11 is lowered from the time point t30 in order to lower the temperature of the heat treatment plate 10. Thereafter, the output is adjusted according to the temperature of the heat treatment plate 10 by PID control that changes the operating conditions. When it is necessary to reduce the amount of heat supplied to the heat treatment plate 10, as shown by the hollow arrow a23 in FIG. 5, for example, by changing the proportional parameter of PID control to make it larger, the output waveform of the main heater 11 is as a whole Just go low.

On the other hand, when the amount of heat supplied to the heat treatment plate 10 is to be increased, as shown by the hollow arrow a24 in FIG. 5, for example, by changing the proportional parameter of PID control to make it smaller, the main heater 11 The overall output waveform can be increased.

Fig. 6 is a graph used to illustrate the experimental results of setting temperature changes. The inventor of the present invention changed the set temperature of the heat treatment plate 10 from 90°C to 140°C by operating the heat treatment apparatus 100 by changing the operating conditions based on FIG. 3. As a result, as shown by the thick solid line in the upper part of FIG. 6, the temperature of the heat-treated plate 10 follows the reference waveform shown by the single-dot chain line and rises at a substantially constant speed during the period from time t40 to time t41. However, after time t41, a relatively large overshoot occurs.

Therefore, the inventor of the present invention, as shown in the middle section of FIG. 6, changed the value of the heating stop parameter in the change operation condition corresponding to the change from the starting temperature of 90°C to the target temperature of 140°C in FIG. 3 from "1" to "5" ". This change means that after the intermediate heater 12 is set to the on state in order to increase the temperature of the heat treatment plate 10, the timing for switching the intermediate heater 12 to the off state is advanced.

Thereafter, by operating the heat treatment apparatus 100 again based on the changed operating conditions after the change, the set temperature of the heat treatment plate 10 is changed from 90°C to 140°C. As a result, as shown in the lower part of FIG. 6, the temperature of the heat-treated plate 10 changes along the reference waveform, and the amount of overshoot decreases.

(4) Control device 50 As shown in FIG. 1, the control device 50 has a memory unit 51, a heat generation control unit 52, a cooling control unit 53, an elevation control unit 54, a temperature acquisition unit 55, and a condition change unit 56 as functional units. The control device 50 includes a CPU (Central Processing Unit) (central processing unit), RAM (Random Access Memory), and ROM (Read Only Memory). The CPU executes the computer program stored in the ROM or other storage media to realize the above-mentioned functions. Furthermore, part or all of the functional components of the control device 50 may also be realized by hardware such as electronic circuits.

The storage unit 51 stores a plurality of change operation conditions set for every combination of two set temperatures among the plurality of set temperatures. The heating control unit 52 controls the heating drive unit 13 in such a way that when the set temperature of the heat treatment plate 10 is increased, the heating control unit 52 operates in accordance with the change operation condition memorized in the memory unit 51. The cooling control unit 53 controls the cooling drive unit 22 in such a way that the active cooling plate 20 is cooled during the period when the power of the heat treatment device 100 is turned on. The elevating control unit 54 controls the elevating device 40 in such a manner that, when the set temperature of the heat treatment plate 10 is lowered, it operates in accordance with the changed operating conditions memorized in the memory unit 51.

The temperature acquisition unit 55 acquires the temperature of the heat treatment plate 10 when the set temperature is changed based on the detection signal output from the temperature sensor 19. More specifically, the temperature acquisition unit 55 acquires the temperature change by sampling the detection signal output from the temperature sensor 19 in a fixed period.

The condition changing unit 56 changes the changing operating conditions memorized in the memory unit 51 in such a way that the temperature change detected by the temperature sensor 19 when the set temperature of the heat treatment plate 10 is changed is close to a predetermined reference waveform.

Furthermore, the heat treatment apparatus 100 includes an operation unit not shown. The user can memorize the initial change operation condition in the memory unit 51 by operating the operation unit. That is, the user can perform the initial change of the setting of the operating conditions.

(5) Set temperature change processing The operation of the heat treatment device 100 accompanying the change of the operating conditions is performed by the control device 50 of FIG. 1 performing the following set temperature change processing. FIG. 7 is a flowchart showing an example of the set temperature change processing executed in the control device 50 of FIG. 1. In the following description, the overshoot and undershoot are collectively referred to as impulse. The setting temperature change process is started by turning on the power of the heat treatment apparatus 100.

First, the heat generation control unit 52 and the elevation control unit 54 in FIG. 1 determine whether or not the set temperature of the heat treatment plate 10 should be changed (step S11). This determination is made based on, for example, whether any one of the heat generation control unit 52 and the elevation control unit 54 has received a signal instructing a change in the set temperature from the outside of the heat treatment apparatus 100.

When the set temperature should not be changed, the heating control unit 52 and the elevation control unit 54 return to the processing of step S11. On the other hand, when the set temperature should be changed, the heating control unit 52 or the elevation control unit 54 reads the change operation condition corresponding to the change of the set temperature from the memory unit 51 in FIG. 1 (step S12).

Next, the heat generation control unit 52 or the elevation control unit 54 controls the heat generation drive unit 13 or the elevation drive unit 41 based on the changed operating conditions to adjust the temperature of the heat treatment plate 10 (step S13). The temperature acquisition part 55 acquires the temperature change of the heat-treatment board 10 when the set temperature of the heat-treatment board 10 is changed (step S14).

When the set temperature change of the heat treatment plate 10 is completed, the condition change part 56 determines whether the temperature change rate at a specific time point in the set temperature change is outside the predetermined allowable range based on the acquired temperature change (step S15).

When the temperature change rate deviates from the allowable range, the condition changing unit 56 calculates the difference between the acquired temperature change rate at a specific time point and the change rate of the reference waveform based on the acquired temperature change (step S16). On the other hand, when the temperature change rate is within the allowable range, the condition changing unit 56 determines whether the temperature value at a specific time point in the set temperature change is outside the predetermined allowable range based on the acquired temperature change (step S17 ).

When the temperature value deviates from the allowable range, the condition changing unit 56 calculates the difference between the acquired temperature value at a specific time point and the temperature value of the reference waveform based on the acquired temperature change (step S18). On the other hand, when the temperature value is within the allowable range, the condition change unit 56 determines whether the impulse generated during the change of the set temperature is outside the predetermined allowable range based on the acquired temperature change (step S19).

When the impulse deviates from the allowable range, the condition changing unit 56 calculates the difference between the acquired impulse and the impulse of the reference waveform based on the acquired temperature change (step S20). On the other hand, when the impulse is within the allowable range, the heat generation control unit 52 and the elevation control unit 54 return to the processing of step S11.

After the processing of the above steps S16, S18, and S20, the condition changing unit 56 decides to change the parameters to be changed in the operating conditions based on the calculated change rate, temperature value, or difference in impulse (step S21). For example, the condition changing unit 56 determines the parameter to be changed based on the level of the calculated difference. Specifically, when the level of the difference is high, the condition changing unit 56 determines the heating stop parameter or the cooling stop parameter as the parameter to be changed. In addition, the condition changing unit 56 determines the proportional parameter of the PID control as the parameter to be changed when the level of the difference is medium. Furthermore, the condition change unit 56 determines the upper limit parameter as the parameter to be changed when the level of the difference is low.

Next, the condition changing unit 56 changes the determined parameter in accordance with a predetermined method (step S22). For example, the condition changing unit 56 changes a parameter of a predetermined value for the determined parameter. After that, the heat generation control unit 52 and the elevation control unit 54 return to the processing of step S11.

In the above-mentioned set temperature change processing, part of the processing in steps S15, S17, and S19 may also be omitted. In this case, the calculation processing of the difference accompanying the omitted processing is also omitted.

(6) Effect As described above, when the heat treatment apparatus 100 changes the heat treatment plate 10 from one set temperature to another set temperature, it operates in accordance with the changed operating conditions memorized in the memory unit 51. At this time, the temperature change of the heat treatment plate 10 is detected, and the change operation condition is changed so that the detected temperature change approaches the reference waveform corresponding to the change from the one set temperature to the other set temperature.

Thereby, when the temperature of the heat treatment plate 10 is changed from one set temperature to another set temperature again, the heat treatment apparatus 100 operates according to the changed operating conditions after the change in the previous temperature change. As a result, the temperature change of the heat-treated plate 10 is closer to the reference waveform than when the set temperature was changed the previous time.

In this way, whenever the set temperature of the heat treatment plate 10 is changed, the temperature change of the heat treatment plate 10 when the set temperature is changed is appropriately corrected one by one. Therefore, it is possible to appropriately shorten the adjustment time of the heat treatment apparatus 100 accompanying the change in the heat treatment temperature of the substrate W. As a result, it is possible to suppress the decrease in heat treatment efficiency caused by the change of the heat treatment temperature.

(7) A substrate processing apparatus equipped with the heat treatment apparatus 100 of FIG. 1 FIG. 8 is a schematic block diagram showing an example of a substrate processing apparatus equipped with the heat treatment apparatus 100 of FIG. 1. As shown in FIG. 8, the substrate processing apparatus 400 is provided adjacent to the exposure apparatus 500, and includes a control section 410, a coating processing section 420, a development processing section 430, a heat treatment section 440, and a substrate transport device 450. The heat treatment unit 440 includes a plurality of heat treatment apparatuses 100 of FIG. 1 for heating the substrate W, and a plurality of cooling plates (not shown) for only cooling the substrate W.

The control unit 410 includes, for example, a CPU, a memory, or a microcomputer, and controls the operations of the coating processing unit 420, the development processing unit 430, the heat treatment unit 440, and the substrate transport device 450.

The substrate transport device 450 transports the substrate W between the coating processing unit 420, the development processing unit 430, the heat treatment unit 440, and the exposure device 500 when the substrate processing device 400 processes the substrate W.

The coating treatment part 420 forms a resist film on one surface of the untreated substrate W (coating treatment). The substrate W after the coating process on which the resist film is formed is subjected to exposure processing in the exposure apparatus 500. The development processing unit 430 performs development processing of the substrate W by supplying a developer solution to the substrate W exposed by the exposure device 500. The heat treatment unit 440 performs heat treatment of the substrate W before and after the coating treatment performed by the coating treatment unit 420, the development treatment performed by the development treatment unit 430, and the exposure treatment performed by the exposure device 500.

Furthermore, the coating treatment part 420 may also form an anti-reflection film on the substrate W. In this case, a processing unit for performing adhesion strengthening treatment may also be provided in the heat treatment part 440 to improve the adhesion between the substrate W and the anti-reflection film. In addition, the coating processing part 420 may also form a resist cover film on the substrate W to protect the resist film formed on the substrate W.

As described above, in the plurality of heat treatment devices 100 of the heat treatment section 440, the above-mentioned set temperature change processing is performed. Thereby, when a plurality of substrates W are sequentially heat-treated at different set temperatures, the temperature of the heat-treated plate 10 can be appropriately adjusted in a short time. As a result, the manufacturing efficiency of the substrate W is improved.

(8) Other implementation forms (a) In the above-mentioned embodiment, the heat treatment apparatus 100 having the configuration for heating and cooling the heat treatment plate 10 has been described, but the present invention is not limited to this. The heat treatment device 100 may not have a structure for cooling the heat treatment plate 10 (in the above example, the active cooling plate 20, the passive cooling plate 30, and the lifting device 40). Alternatively, the heat treatment apparatus 100 may not have a structure for heating the heat treatment plate 10 (in the above example, the main heater 11 and the intermediate heater 12). In this case, the time required for adjustment when the set temperature of the heat treatment device 100 rises or falls can also be shortened.

(b) In the heat treatment apparatus 100, the upper surface of the heat treatment plate 10 may be divided into a plurality of regions, and a configuration for heating the part may be provided in a manner corresponding to each region. That is, the main heater 11, the intermediate heater 12, and the heat generating drive unit 13 may be provided for each of the plurality of regions of the heat treatment plate 10. Alternatively, the main heater 11 and the intermediate heater 12 may be provided for each of the plurality of regions of the heat treatment plate 10, and the heating drive unit 13 may be driven separately from the plurality of main heaters 11 and the intermediate heater 12.

In this case, in the memory portion 51, it is also possible to memorize and change the operating conditions for each of the plurality of regions of the heat treatment plate 10. In addition, the condition changing unit 56 may, for example, set the temperature change of a plurality of regions of the heat treatment plate 10 at the time of temperature change to approach the reference waveform, and change a plurality of parameters of the changing operating conditions corresponding to all regions. According to this structure, it is possible to perform a more detailed temperature adjustment of a plurality of regions on the upper surface of the heat-treated plate 10. Furthermore, in this example, the temperature change obtained when the set temperature is changed for one of the plurality of regions can also be set as the reference waveform.

(c) In the above-mentioned embodiment, the main heater 11 and the intermediate heater 12 are provided in the heat treatment plate 10, but the present invention is not limited to this. When the main heater 11 is configured to increase the temperature of the heat treatment plate 10 in a short time, the intermediate heater 12 may not be provided.

(9) Correspondence between each component of the technical plan and each element of the implementation form Hereinafter, an example of the correspondence between each component of the technical solution and each element of the embodiment will be described. In the above embodiment, the heat treatment device 100 is an example of a heat treatment device, the heat treatment plate 10 is an example of a plate member, the main heater 11, the intermediate heater 12, the heating drive unit 13, the active cooling plate 20, the passive cooling plate 30, and the lifting The device 40 is an example of a heat treatment unit, the memory unit 51 is an example of a memory unit, the heating control unit 52, the cooling control unit 53, and the elevation control unit 54 are examples of an action control unit, and the temperature sensor 19 is an example of a temperature detector. The temperature acquiring unit 55 and the condition changing unit 56 are examples of the condition changing unit.

In addition, in the above-mentioned embodiment, the intermediate heater 12 being in the ON state or the passive cooling plate 30 being in the contact state is an example in which the heat treatment portion is in the first state. In addition, the intermediate heater 12 is in the off state and the passive cooling plate 30 is in the non-contact state is an example in which the heat treatment portion is in the second state.

As each component of the technical solution, various other elements having the configuration or function described in the technical solution can also be used.

10: Heat treatment board 11: Main heater 12: Intermediate heater 13: Heating drive part 19: Temperature sensor 20: Active cooling plate 21: Cooling mechanism 22: Cooling drive part 30: Passive cooling plate 40: Lifting device 41: Lifting drive 50: control device 51: Memory Department 52: Heat control section 53: Cooling Control Department 54: Lifting control part 55: Temperature Acquisition Department 56: Condition Change Department 100: Heat treatment device 400: Substrate processing device 410: Control Department 420: Coating Processing Department 430: Development Department 440: Heat Treatment Department 450: substrate transfer device 500: Exposure device W: substrate

Fig. 1 is a schematic side view showing the structure of a heat treatment apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing an example of the temperature change of the heat-treated plate when heat treatment is sequentially performed on a plurality of substrates. Fig. 3 is a diagram showing an example of changing operating conditions set for every combination of two set temperatures among a plurality of set temperatures. Fig. 4 is a diagram for explaining a modification example of the modification operation condition for increasing the temperature of the heat treatment plate from a lower starting temperature to a higher target temperature. Fig. 5 is a diagram for explaining an example of a change in operating conditions for changing the temperature of the heat treatment plate from a higher starting temperature to a lower target temperature. Fig. 6 is a diagram used to illustrate the experimental results related to setting temperature changes. Fig. 7 is a flowchart showing an example of the set temperature change processing executed in the control device of Fig. 1. Fig. 8 is a schematic block diagram showing an example of a substrate processing apparatus equipped with the heat treatment apparatus of Fig. 1.

10: Heat treatment plate

11: Main heater

12: Intermediate heater

13: Heating drive part

19: Temperature sensor

20: Active cooling plate

21: Cooling mechanism

22: Cooling drive unit

30: Passive cooling plate

40: Lifting device

41: Lifting drive

50: control device

51: Memory Department

52: Heat control section

53: Cooling Control Department

54: Lifting control part

55: Temperature Acquisition Department

56: Condition Change Department

100: Heat treatment device

W: substrate

Claims (10)

A heat treatment device, which is a heat treatment device for a substrate, and has: The plate member, which carries the substrate; A heat treatment part, which heats the substrate placed on the plate member through the plate member; A memory part, which memorizes the operating conditions of the heat treatment part when the temperature of the plate member is changed from the set first temperature to the set second temperature; An action control unit which makes the heat treatment unit operate according to the action conditions memorized in the memory unit; A temperature detector, which detects the temperature of the above-mentioned plate member; and The condition changing unit changes the operating conditions stored in the memory unit such that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operating conditions is close to a predetermined reference waveform. Such as the heat treatment device of claim 1, wherein the above-mentioned operating conditions include the value of one or more control parameters, The condition changing unit changes the value of at least one of the one or more control parameters stored in the memory unit in such a way that the detected temperature change approaches the reference waveform. The heat treatment device of claim 2, wherein the heat treatment section is configured to be switchable between a first state in which the plate member is heated or cooled, and a second state in which the plate member is not heated or cooled, The one or more control parameters include the switching timing of the first and second states of the heat treatment section. Such as the heat treatment device of claim 2 or 3, wherein the heat treatment part is configured to be capable of PID control, The one or more control parameters include at least one of a proportional parameter, an integral parameter, and a derivative parameter of the PID control for changing the temperature of the plate member from the first temperature to the second temperature. For example, the heat treatment device of claim 2 or 3, wherein the one or more control parameters include the upper limit of the output of the heat treatment unit. The heat treatment device of any one of claims 1 to 3, wherein the condition changing unit changes the operating conditions in the following manner, that is, during the period when the temperature of the plate member changes from the first temperature to the second temperature The temperature change rate detected by the temperature detector at the specific time point is close to the temperature change rate of the part of the reference waveform corresponding to the specific time point. The heat treatment device of any one of claims 1 to 3, wherein the condition changing unit changes the operating conditions in the following manner, that is, during the period when the temperature of the plate member changes from the first temperature to the second temperature The value of the temperature detected by the temperature detector at the specific time point is close to the value of the temperature of the part of the reference waveform corresponding to the specific time point. The heat treatment device of any one of claims 1 to 3, wherein the condition changing section changes the operating conditions in the following manner, that is, the amount of overshoot relative to the second temperature generated in the waveform of the detected temperature Or the undershoot becomes smaller. A heat treatment method, which is a heat treatment of a substrate, and includes the following steps: Place the substrate on the board member; Subjecting the mounted substrate to the heat treatment performed by the heat treatment section through the plate member; The operating conditions of the heat treatment section when the temperature of the plate member is changed from the set first temperature to the set second temperature is stored in the memory section; Make the heat treatment section operate according to the operating conditions memorized in the memory section; Detecting the temperature of the above-mentioned plate member by a temperature detector; and The operation condition stored in the storage unit is changed so that the temperature change detected by the temperature detector when the heat treatment unit operates in accordance with the operation condition is close to a predetermined reference waveform. Such as the heat treatment method of claim 9, wherein the above-mentioned operating conditions include the value of one or more control parameters, The step of changing the operating condition includes: changing the value of at least one of the one or more control parameters stored in the memory unit in such a way that the detected temperature change is close to the reference waveform.

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