TW202036823A - Bonding structure for electronic packages and bonding wire - Google Patents

Abstract

A bonding structure for electronic packages includes a ball bonding portion disposed on a semiconductor chip. The bonding structure for electronic packages also includes an interface structure disposed between the semiconductor chip and the ball boding portion. The interface structure includes one or more spinel phases MAl₂ O₄ .

Description

Electronic package bonding structure and bonding wire

The embodiment of the present invention relates to a bonding structure, and particularly to an electronic package bonding structure.

Wire bonding is one of the main steps of integrated circuit (IC) and light-emitting diode (LED) packaging. The reliability of wire bonding products mainly depends on the quality of the bonding interface between the bonding wire and the bonding pad (such as aluminum pad). Traditional packaging processes usually use pure gold wires, pure copper wires or silver alloy wires as bonding wires for wire bonding.

According to the report in Literature 1 (TC Wei and AR Daud, Mechanical and Electrical Properties of Au-Al and Cu-Al Intermetallics Layers at Wire Bonding Interface, Journal of Electronic Packaging, December 2003, Vol. 125, pp. 617-620.) , When using pure gold wire and aluminum pad for wire bonding and aging treatment, the Au-Al intermetallic phase will grow rapidly, resulting in strength attenuation and a significant increase in resistivity. Document 1 also pointed out that when pure copper wire and aluminum pad are used for wire bonding and aging treatment, the growth of the Cu-Al intermetallic phase is slower, but the bonding strength will still decrease and the resistivity will increase.

According to literature 2 (CL Gan, C. Francis, BL Chan and U. Hashim, Gold Bull, 2013, Vol. 46, pp. 103-115.), pure gold wire, pure copper wire and aluminum pad are used for wire bonding and After various reliability tests, the interface between the ball solder joint (or solder joint) and the aluminum pad was severely cracked, which may be caused by the hydrolysis of Au-Al and Cu-Al intermetallic phase to form alumina particles and hydrogen. The interface rupture occurs.

According to literature 3 (TH Chuang, CC Chang, CH Chuang, JD Lee and HH Tsai, Formation and Growth of Intermetallics in an Annealing-Twinned Ag-8Au-3Pd Wire Bonding Package During Reliability Tests, IEEE Transactions on Components, Packaging and Manufacturing Technology , January 2013, Vol. 3, No.1, pp.3-9.) reported that using Ag-8Au-3Pd silver alloy wire and aluminum pad for wire bonding and various reliability tests, the ball solder joints and aluminum The intermetallic phases Ag ₂ Al and AgAl ₂ appear at the interface of the pad. Document 3 also pointed out that after the use of pure gold wire and aluminum pad for wire bonding and reliability test, thick intermetallic phases Au ₈ Al ₃ , Au ₄ Al and AuAl _{2 are formed} . Document 3 also pointed out that after the use of pure copper wire and aluminum pad for wire bonding and reliability test, the intermetallic phase CuAl _{2 is} formed.

In summary, the intermetallic interface structure formed by the traditional bonding wire for wire bonding process may grow excessively during the package reliability test and chip operation process, which may cause the performance of electronic products to deteriorate or even fail.

It can be seen from the above that although the traditional bonding wire meets the general use requirements, it is not satisfactory in all aspects.

The embodiment of the present invention includes an electronic package bonding structure. The above-mentioned electronic package bonding structure includes a ball solder joint portion provided on a semiconductor chip. The electronic package bonding structure also includes an interface structure provided between the semiconductor chip and the ball solder joint portion. The aforementioned interface structure includes one or more spinel phase MAl ₂ O ₄ .

The embodiment of the present invention includes a bonding wire. The aforementioned bonding wire includes a metal material. The aforementioned metal materials include silver, copper, gold, aluminum, silver alloys, copper alloys, gold alloys, aluminum alloys, or combinations thereof. The bonding wire also includes Ce, Hf, La, Lu, Ta, Ti, Zn, Nb or a combination of the above.

The following disclosure provides many different embodiments or examples to implement different features of this case. The following disclosure describes specific examples of each component and its arrangement to simplify the description. Of course, these specific examples are not meant to be limiting. For example, if the embodiment of the present invention describes that a first characteristic part is formed on or above a second characteristic part, it means that it may include an embodiment in which the first characteristic part and the second characteristic part are in direct contact. It may include an embodiment in which an additional characteristic part is formed between the first characteristic part and the second characteristic part, and the first characteristic part and the second characteristic part may not be in direct contact.

It should be understood that additional operation steps may be implemented before, during or after the method, and in other embodiments of the method, part of the operation steps may be replaced or omitted.

In addition, terms related to space may be used, such as "below", "below", "lower", "above", "higher" and similar terms. These space-related terms are In order to facilitate the description of the relationship between one element(s) or characteristic part and another element(s) or characteristic part in the illustration, these spatially related terms include the different orientations of the device in use or operation, and the The orientation described. When the device is turned in different directions (rotated by 90 degrees or other directions), the space-related adjectives used therein will also be interpreted according to the turned position.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings commonly understood by the general artisans to whom the disclosure belongs. It is understandable that these terms, such as those defined in commonly used dictionaries, should be interpreted as having meanings consistent with the relevant technology and the background or context of the present invention, and should not be interpreted in an idealized or overly formal way. Interpretation, unless specifically defined in the embodiments of the present invention.

The description of “pure metal” (such as pure silver, pure copper, pure gold, pure aluminum) in the full text of this disclosure refers to a pure metal that is expected to be completely free of impurities such as other elements and compounds, but in actual smelting, refining, and It is difficult to completely remove the above-mentioned impurities during the process of coating and so on to achieve a mathematical or theoretical 100% pure metal. When the range of the above-mentioned impurity content falls within the allowable range set by the corresponding standard or specification, it can be regarded as "Substantially pure metal." The meaning of any other substantially pure matter is the same. Those with ordinary knowledge in the technical field to which the present invention pertains should understand that the corresponding standards or specifications mentioned above will be different according to different properties, conditions, requirements, etc., so no specific standards or specifications are listed below.

The different embodiments disclosed below may use the same reference symbols and/or marks repeatedly. These repetitions are for the purpose of simplification and clarity, and are not used to limit the specific relationship between the different embodiments and/or structures discussed.

In the electronic package structure of the embodiment of the present invention, the bonding structure includes an interface structure that is bonded to the semiconductor chip, and the interface structure includes one or more spinel phase MAl ₂ O ₄ . Compared with the traditional intermetallic phase, the mechanical properties of the interface structure including one or more spinel phases of MAl ₂ O ₄ in the embodiments of the present invention are better, so that the occurrence of cracking can be reduced or avoided and the electronic package structure is improved. Reliability.

The spinel phase MAl ₂ O _{4 of the} embodiment of the present invention has many advantages, such as high strength, high melting point, excellent chemical resistance, and thermal shock resistance. For example, the thermal conductivity of the spinel phase MAl ₂ O ₄ of the embodiment of the present invention may be 1.0 to 5.0 W/mK, and the thermal expansion coefficient may be 6 x 10 ^-6 K ^-1 to 12 x 10 ^-6 K ^-1 , So it is compatible with most metal and ceramic materials. In addition, in some embodiments, even if the above-mentioned spinel phase MAl ₂ O _{4 is} partially or completely converted into inverse spinel phase Al(MAl) ₂ O ₄ , its physical and chemical properties will not be greatly changed.

In some embodiments, the formed spinel phase MAl ₂ O ₄ is a good diffusion barrier layer (barrier layer), so the bonding process (such as: wire bonding process) can inhibit the bonding structure (such as: welding The growth of the intermetallic phase that is unfavorable for the reliability of the dot structure can avoid or reduce the problems of cracking and hydrolytic corrosion of the bonding structure, and also avoid or reduce the formation of Kirkendall holes in the bonding structure.

In some embodiments, since the spinel phase MAl ₂ O _{4 of} the formed bonding structure has the characteristics of high strength, thermal shock resistance, corrosion resistance, etc., it can effectively improve the service life of electronic products (such as electronic packaging structures) .

In addition, in the traditional bonding process, the intermetallic phase formed by the reaction between the bonding wire and the bonding pad on the semiconductor chip mostly exhibits a shell-like growth. Therefore, between the solder joint and the semiconductor chip (or between the solder joint and the remaining bonding pad) (Between) will have gaps and cause incomplete joints. Compared with the traditional intermetallic phase, in some embodiments of the present invention, the formed spinel phase MAl ₂ O ₄ is more continuous, so that between the solder joint and the semiconductor chip (or between the solder joint and the remaining bonding pad) Between) can be more completely joined.

On the other hand, as the size of the bonding pads on the semiconductor chip continues to shrink, after the wire bonding process is performed using traditional bonding wires, the small-sized bonding pads may be completely converted into the traditional intermetallic phase. Because the bonding force between the traditional intermetallic phase and the semiconductor chip (for example: silicon chip) is very low, it is prone to the problem of solder joints falling off and the packaged product failure. In contrast, in some embodiments of the present invention, the bonding force between the formed spinel phase MAl ₂ O ₄ and the semiconductor wafer (e.g., silicon wafer) is stronger, so even if the bonding on the semiconductor wafer Due to its small size, the pad is consumed during the wire bonding process, and there is no problem of solder joints falling off.

FIG. 1 shows a partial cross-sectional view of an electronic package structure 10 according to some embodiments of the present invention. As shown in FIG. 1, in some embodiments, the electronic package structure 10 includes a semiconductor chip 100 (for example, a silicon chip) and a bonding structure 102.

In some embodiments, the bonding structure 102 can connect the semiconductor chip 100 and another semiconductor chip of the electronic packaging structure 10 (not shown in the figure). In some embodiments, the bonding structure 102 can connect the semiconductor chip 100 and the substrate of the electronic packaging structure 10 (not shown in the figure). For example, the above-mentioned substrate may include a printed circuit board, other suitable substrates, or a combination of the above.

In some embodiments, as shown in FIG. 1, the bonding structure 102 includes an interface layer 104, a ball bonding portion 106 and/or a wire portion 108.

In some embodiments, the interface layer 104 includes an interface structure, and the interface structure includes one or more spinel phase MAl ₂ O ₄ . For example, the element M can be Ce, Hf, La, Lu, Ta, Ti, Zn, or Nb. In some embodiments, a ball bonding process may be used to form the interface layer 104 and the ball bonding portion 106.

In some embodiments, a bonding wire may be used for a wire bonding process to form the interface layer 104, the ball bonding portion 106, and the wire portion 108 of the bonding structure 102. In some embodiments, in the wire bonding process for forming the bonding structure 102, a free air ball (FAB) may be formed at the end of the bonding wire through electronic flame-off (EFO), and then the above-mentioned melting The ball interacts with the bonding pad on the semiconductor wafer 100 to form the interface layer 104. For example, thermocompression bonding, ultrasonic bonding, thermosonic bonding, other appropriate methods, or a combination of the above may be used to cause the molten sphere to interact with the bonding pad on the semiconductor wafer 100 to form the interface layer 104. For example, the bonding pads on the aforementioned semiconductor wafer 100 may have a single-layer structure (e.g., aluminum layer or aluminum-silicon layer) or a multilayer structure (e.g., aluminum layer/titanium layer/aluminum layer, aluminum-silicon layer/titanium layer/aluminum Silicon layer). In some embodiments, oxide (for example, aluminum oxide) may be formed on the surface of the bonding pad on the semiconductor wafer 100.

In some embodiments, in the wire bonding process for forming the bonding structure 102, after the interface layer 104 and the ball bond portion 106 are formed, the bonding wire can be guided to another bonding pad of the electronic package structure 10 through an appropriate path (For example: bonding pads on another semiconductor chip of the electronic packaging structure 10, bonding pads on the substrate of the electronic packaging structure 10), and bonding the above-mentioned bonding wires with another bonding pad of the above-mentioned electronic packaging structure 10 (for example: Wedge bonding). In some embodiments, the aforementioned bonding wire forms the wire portion 108 of the bonding structure 102 along the aforementioned path.

In some embodiments, in order to make the interface structure of the interface layer 104 include one or more spinel phase MAl ₂ O ₄ (for example: CeAl ₂ O ₄ , HfAl ₂ O ₄ , LaAl ₂ O ₄ , LuAl ₂ O ₄ , TaAl ₂ O ₄ , TiAl ₂ O ₄ , Zn Al ₂ O ₄ or NbAl ₂ O ₄ ), the bonding wire used in the wire bonding process for forming the bonding structure 102 includes one or more elements M (for example: Ce, Hf, La, Lu, Ta, Ti, Zn or Nb). Therefore, in these embodiments, the above-mentioned bonding wires including one or more elements M can interact with the bonding pads on the semiconductor wafer 100 during the wire bonding process to form MAl ₂ O including one or more spinel phases. ₄ is the interface structure of the interface layer 104.

In some embodiments, during the wire bonding process for forming the bonding structure 102, the spinel phase MAl ₂ O ₄ can inhibit the silver, copper, gold, aluminum or a combination of the above in the bonding wire from being diffused with the semiconductor chip The bonding pads on 100 react, so the formation of intermetallic phases that are detrimental to reliability in the interface layer 104 can be avoided or reduced.

In some embodiments, during the wire bonding process for forming the bonding structure 102, the element M included in the bonding wire has a high affinity for oxygen, and therefore can react with the oxide on the surface of the bonding pad on the semiconductor wafer 100 to form a tip Spar phase MAl ₂ O ₄ .

In some embodiments, as shown in FIG. 1, when the bonding pads on the semiconductor wafer 100 are thin, the bonding pads can react with the bonding wires to completely transform into the interface layer 104. In some embodiments, the interface layer 104 directly contacts the semiconductor wafer 100. In some embodiments, the spinel phase MAl ₂ O _{4 of the} interface layer 104 directly contacts the semiconductor wafer 100. Compared with the traditional intermetallic phase, the bonding force between the spinel phase MAl ₂ O ₄ of the interface layer 104 of the present invention and the semiconductor wafer 100 (for example, silicon wafer) is higher, so even if the semiconductor wafer 100 The above bonding pads are completely consumed during the wire bonding process, and it is not easy to cause the interface layer 104 to fall off the semiconductor wafer 100. For example, the thickness of the interface layer 104 may be 0.1 μm to 4 μm.

In some embodiments, the interface structure of the interface layer 104 may also include one or more inverse spinel phase Al(MAl) ₂ O ₄ containing element M. In some embodiments, the interface structure of the interface layer 104 may also include one or more oxides containing element M (for example: MO). In some embodiments, the oxide containing element M of the interface structure of the interface layer 104 is doped in the spinel phase MAl ₂ O ₄ and/or the inverse spinel phase Al(MAl) ₂ O ₄ .

For example, it can be achieved by Energy Dispersive Spectrometer (EDS), Electron Probe X-ray MicroAnalyzer (EPMA), Transmission electron microscopy diffraction (Transmission electron microscopy diffraction), and other appropriate Method or a combination of the above to confirm the formation of spinel phase MAl ₂ O ₄ , inverse spinel phase Al(MAl) ₂ O ₄ and/or oxide containing element M.

In some embodiments, since the element M in the bonding wire (for example: Ce, Hf, La, Lu, Ta, Ti, Zn or Nb) has high surface segregation and interface segregation effects, the bonding wire only needs to include low The content of element M (for example: the total content of one or more elements M in the bonding wire is less than or equal to 10000 ppm and greater than 2 ppm), it can react with the bonding pad on the semiconductor wafer 100 to form the desired spinel phase MAl ₂ O ₄ . In some embodiments, since the total content of one or more elements M in the bonding wire is relatively low, the bonding structure 102 has better electrical and thermal conductivity. In some embodiments, the total content of one or more elements M in the bonding wire is less than or equal to 1000 ppm (for example, less than or equal to 1000 ppm and greater than 2 ppm), so that the bonding structure 102 has better performance.

FIG. 2 illustrates a partial cross-sectional view of the electronic package structure 20 according to some embodiments of the present invention. One difference between the electronic packaging structure 20 and the electronic packaging structure 10 is that there are bonding pads 101 remaining between the semiconductor chip 100 and the interface layer 104 of the electronic packaging structure 20. In other words, in some embodiments, the bonding structure 102 of the electronic package structure 20 includes the bonding pad 101 between the semiconductor wafer 100 and the interface layer 104. In some embodiments, the bonding pad 101 includes aluminum.

For example, the bonding pad 101 on the semiconductor chip 100 may have a relatively large thickness. Therefore, after the wire bonding process for forming the bonding structure 102, there are still some bonding pads 101 that are not reacted to the interface layer 104 and remain on the semiconductor chip Above 100.

FIG. 3 is a partial cross-sectional view of the electronic package structure 30 according to some embodiments of the present invention. One difference between the electronic packaging structure 30 and the electronic packaging structure 10 is that the bonding structure 302 of the electronic packaging structure 30 is a stud bump. In some embodiments, the bonding structure 302 includes a ball bond portion 306 and an interface layer 304 between the semiconductor wafer 300 and the ball bond portion 306. In some embodiments, the joining structure 302 does not include the wire portion 108 as shown in FIG. 1.

For example, the material and forming method of the interface layer 304 can be the same or similar to the interface layer 104 of the previous embodiment, and the material and forming method of the ball bond portion 306 can be the same or similar to the ball bond portion 106 of the previous embodiment. For the sake of brevity, it will not be described in detail here. In some embodiments, the interface layer 304 includes an interface structure, and the interface structure includes one or more spinel phase MAl ₂ O ₄ . For example, the element M can be Ce, Hf, La, Lu, Ta, Ti, Zn, or Nb.

In some embodiments, the same or similar wire bonding process used to form the interface layer 104 and the ball bond portion 106 can be used to form the interface layer 304 and the ball bond portion 306, and then the bonding wire and the ball bond portion 306 can be formed. The joint structure 302 is formed by separation.

In some embodiments, the bonding structure 302 may be used in a flip chip bonding process to bond the semiconductor chip 300 to other semiconductor chips (not shown in the figure) or to the substrate ( Not shown in the figure).

In some embodiments, the interface structure of the interface layer 304 also includes one or more of the aforementioned spinel phase MAl ₂ O ₄ (for example: CeAl ₂ O ₄ , HfAl ₂ O ₄ , LaAl ₂ O ₄ , LuAl ₂ O ₄ , TaAl ₂ O ₄ , TiAl ₂ O ₄ , Zn Al ₂ O ₄ or NbAl ₂ O ₄ ), therefore, the interface layer 304 of the bonding structure 302 can also have the same or similar advantages as the interface layer 104 of the bonding structure 102 described above.

In some embodiments, the interface structure of the interface layer 304 may also include one or more inverse spinel phase Al(MAl) ₂ O ₄ containing the element M. In some embodiments, the interface structure of the interface layer 304 may also include one or more oxides containing element M (for example: MO). In some embodiments, the oxide containing element M of the interface structure of the interface layer 304 is doped in the spinel phase MAl ₂ O ₄ and/or the inverse spinel phase Al(MAl) ₂ O ₄ .

FIG. 4 is a partial cross-sectional view of the electronic package structure 40 according to some embodiments of the present invention. One of the differences between the electronic packaging structure 40 and the electronic packaging structure 30 lies in the bonding pad 301 remaining between the semiconductor chip 300 of the electronic packaging structure 40 and the interface layer 304 of the bonding structure 302. For example, the material and formation of the bonding pad 301 may be the same or similar to the bonding pad 101 of the previous embodiment.

Figure 5 illustrates the bonding wire 50 of some embodiments of the present invention. The bonding wire 50 can be used to form the bonding structure 102 and the bonding structure 302 of the foregoing embodiment. For example, the bonding wire 50 may be used for a wire bonding process to form the bonding structure 102 and the bonding structure 302.

As shown in Figure 5, in some embodiments, the bonding wire 50 includes a metal material 50'. In some embodiments, the metal material 50' is the main body of the bonding wire 50.

In some embodiments, the metal material 50' includes pure silver, pure copper, pure gold, pure aluminum, silver alloy, copper alloy, gold alloy, aluminum alloy, or a combination thereof. In some embodiments, the metal material 50' includes an aluminum silicon alloy.

In some embodiments, in order to enable the bonding wire 50 to be used to form the MAl ₂ O ₄ containing one or more spinel phases (for example: CeAl ₂ O ₄ , HfAl ₂ O ₄ , LaAl ₂ O ₄ , LuAl ₂ O ₄ , TaAl ₂ O ₄ , TiAl ₂ O ₄ , Zn Al ₂ O ₄ or NbAl ₂ O ₄ ) bonding structure (for example: bonding structure 102, 302), bonding wire 50 needs to include one or more elements M ( For example: Ce, Hf, La, Lu, Ta, Ti, Zn or Nb). For example, one or more elements M may be distributed in the metal material 50'.

When the total content of one or more elements M (for example: Ce, Hf, La, Lu, Ta, Ti, Zn, or Nb) included in the bonding wire 50 is too large, the resistivity of the bonding wire 50 may increase unfavorably The performance of the electronic packaging structure. When the total content of one or more elements M included in the bonding wire 50 is too small, sufficient spinel phase MAl ₂ O ₄ may not be formed. In some embodiments, the total content of one or more elements M included in the bonding wire 50 is greater than 2 ppm and less than or equal to 10,000 ppm. In some embodiments, the total content of one or more elements M included in the bonding wire 50 is less than or equal to 1000 ppm (for example, less than or equal to 1000 ppm and greater than 2 ppm), so that the formed bonding structure has better performance.

In some embodiments, the bonding wire 50 is used for a wire bonding process to form the bonding structure 102 of the foregoing embodiment. In these embodiments, the wire portion 108 of the bonding structure 102 is formed by the bonding wire 50 that does not react with the bonding pad. In some embodiments, similar to the bonding wire 50, the wire portion 108 of the bonding structure 102 also includes one or more elements M (for example: Ce, Hf, La, Lu, Ta, Ti, Zn or Nb), and the bonding structure 102 The total content of one or more elements M included in the wire part 108 is also greater than 2 ppm and less than or equal to 10000 ppm. In some embodiments, similar to the bonding wire 50, the total content of one or more elements M included in the wire portion 108 of the bonding structure 102 is less than or equal to 1000 ppm (for example: less than or equal to 1000 ppm and greater than 2 ppm), which has better The effectiveness of.

For example, inductively coupled plasma (ICP) analysis technology can be used to measure the total content of one or more elements M included in the bonding wire 50 or the wire portion 108.

In summary, the interface structure of the bonding structure of the embodiment of the present invention (for example: the interface structure of the interface layer 104, the interface structure of the interface layer 304) includes one or more spinel phase MAl ₂ O ₄ containing the element M, and the above-mentioned spinel The stone phase MAl ₂ O ₄ has good mechanical properties, a high melting point, excellent chemical resistance and excellent thermal shock resistance. In addition, it can also inhibit or reduce the growth of traditional intermetallic phases with poor properties, so it can improve The reliability of electronic packaging structures (for example: electronic packaging structures 10, 20, 30, 40).

The foregoing text outlines the characteristic components of many embodiments, so that those skilled in the art can better understand the embodiments of the present invention from various aspects. Those skilled in the art should understand, and can easily design or modify other processes and structures based on the embodiments of the present invention, so as to achieve the same purpose and/or achieve the same purpose as the embodiments described herein. The same advantages. Those skilled in the art should also understand that these equivalent structures do not depart from the inventive spirit and scope of the embodiments of the present invention. Without departing from the spirit and scope of the embodiments of the present invention, various changes, substitutions or modifications can be made to the embodiments of the present invention. Therefore, the scope of protection of the present invention shall be subject to those defined by the appended patent scope. In addition, although the present invention has been disclosed as above in several preferred embodiments, they are not intended to limit the present invention, and not all advantages have been described in detail here.

Each claim of the present disclosure may be a separate embodiment, and the scope of the present disclosure includes each claim of the present disclosure and the combination of each embodiment with each other.

10, 20, 30, 40: Electronic package structure 50: Bonding wire 100, 300: Semiconductor wafer 101, 301: Bonding pad 102, 302: Bonding structure 104, 304: Interface layer 106, 306: Ball solder joint part 108: Wire section

The embodiments of the present invention will be described in detail below in conjunction with the drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustrative purposes. In fact, the size of the element may be enlarged or reduced to clearly show the technical features of the embodiment of the present invention. FIG. 1 shows a partial cross-sectional view of an electronic package structure 10 according to an embodiment of the present invention. FIG. 2 is a partial cross-sectional view of the electronic package structure 20 according to an embodiment of the present invention. FIG. 3 is a partial cross-sectional view of the electronic package structure 30 according to an embodiment of the present invention. FIG. 4 is a partial cross-sectional view of an electronic package structure 40 according to an embodiment of the present invention. FIG. 5 is a partial perspective view of the bonding wire 50 according to the embodiment of the present invention.

10: Electronic packaging structure

100: semiconductor wafer

102: Joint structure

104: Interface layer

106: Ball solder joint part

108: Wire part

Claims (11)

An electronic package joint structure, comprising: a ball solder joint part arranged on a semiconductor chip; and an interface structure arranged between the semiconductor chip and the ball solder joint part, wherein the interface structure includes one or more spinels Stone phase MAl ₂ O ₄ . The electronic package bonding structure described in item 1 of the scope of the patent application, wherein M is Ce, Hf, La, Lu, Ta, Ti, Zn or Nb. According to the electronic package bonding structure described in item 1 of the scope of patent application, the interface structure further includes one or more inverse spinel phase Al(MAl) ₂ O ₄ . According to the electronic package bonding structure described in claim 1, wherein the interface structure further includes one or more oxides containing M. According to the electronic package bonding structure described in claim 1, wherein the one or more spinel phases MAl ₂ O ₄ directly contact the semiconductor chip. The electronic package bonding structure described in claim 1 further includes: a bonding pad disposed between the interface structure and the semiconductor chip, wherein the bonding pad includes aluminum. The electronic package bonding structure described in item 1 of the scope of the patent application further includes: a wire part disposed on the ball solder joint part. The electronic package bonding structure described in item 7 of the scope of patent application, wherein the wire part includes: a metal material, including silver, copper, gold, aluminum, silver alloy, copper alloy, gold alloy, aluminum alloy or a combination of the foregoing; And Ce, Hf, La, Lu, Ta, Ti, Zn, Nb or a combination of the above. According to the electronic package bonding structure described in item 8 of the scope of patent application, the total content of Ce, Hf, La, Lu, Ta, Ti, Zn, and Nb in the wire part is greater than 2 ppm and less than or equal to 10,000 ppm. A bonding wire includes: a metal material, wherein the metal material includes silver, copper, gold, aluminum, silver alloy, copper alloy, gold alloy, aluminum alloy or a combination of the foregoing; and Ce, Hf, La, Lu, Ta, Ti, Zn, Nb or a combination of the above. The bonding wire described in item 10 of the scope of patent application, wherein the total content of Ce, Hf, La, Lu, Ta, Ti, Zn, and Nb in the bonding wire is greater than 2 ppm and less than or equal to 10000 ppm.

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