TW202030254A - Resin composition for millimeter wave substrate, adhesive film for millimeter wave substrate, millimeter wave substrate, millimeter wave radar substrate, and semiconductor device - Google Patents

Resin composition for millimeter wave substrate, adhesive film for millimeter wave substrate, millimeter wave substrate, millimeter wave radar substrate, and semiconductor device Download PDF

Info

Publication number
TW202030254A
TW202030254A TW108144101A TW108144101A TW202030254A TW 202030254 A TW202030254 A TW 202030254A TW 108144101 A TW108144101 A TW 108144101A TW 108144101 A TW108144101 A TW 108144101A TW 202030254 A TW202030254 A TW 202030254A
Authority
TW
Taiwan
Prior art keywords
millimeter wave
component
substrate
resin composition
mass
Prior art date
Application number
TW108144101A
Other languages
Chinese (zh)
Other versions
TWI814956B (en
Inventor
黒川津与志
吉田真樹
佐藤淳也
Original Assignee
日商納美仕有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商納美仕有限公司 filed Critical 日商納美仕有限公司
Publication of TW202030254A publication Critical patent/TW202030254A/en
Application granted granted Critical
Publication of TWI814956B publication Critical patent/TWI814956B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/51Phosphorus bound to oxygen
    • C08K5/53Phosphorus bound to oxygen bound to oxygen and to carbon only
    • C08K5/5313Phosphinic compounds, e.g. R2=P(:O)OR'
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025Crosslinking or vulcanising agents; including accelerators
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J109/00Adhesives based on homopolymers or copolymers of conjugated diene hydrocarbons
    • C09J109/06Copolymers with styrene
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • C09J153/02Vinyl aromatic monomers and conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35Heat-activated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Provided is a resin composition for a millimeter-wave substrate which can be used as an insulator for a millimeter-wave radar, in which a cured product of the resin composition has excellent high-frequency characteristics, small temperature dependency of tan δ, and excellent flame retardancy.
This invention provides a resin composition for a millimeter-wave substrate including (A) a hydrogenated styrene elastomer, (B) a cross-linkable compound having a biphenyl skeleton, and (C) a flame retardant containing a metal salt of phosphinic acid, Component (C) is 15 parts by mass to 50 parts by mass with respect to 100 parts by mass in total of the components (A), (B) and (C), and the rate of change of the value of dielectric loss tangent at 10 GHz at 120 ℃ with respect to the value at 25 ℃ of the cured product is not more than 30%.

Description

毫米波基板用樹脂組成物、毫米波基板用接著膜、毫米波基板、毫米波雷達基板及半導體裝置 Resin composition for millimeter wave substrate, adhesive film for millimeter wave substrate, millimeter wave substrate, millimeter wave radar substrate, and semiconductor device

本發明有關於毫米波基板用樹脂組成物、毫米波基板用接著膜、毫米波基板、毫米波雷達基板及半導體裝置。 The present invention relates to a resin composition for a millimeter wave substrate, an adhesive film for a millimeter wave substrate, a millimeter wave substrate, a millimeter wave radar substrate, and a semiconductor device.

一般而言,高頻率用途的印刷線路版被要求為傳輸損失小。以往,即使在高頻率用途,也只要於1GHz帶域的傳輸損失小的話便為充分,而就印刷電路板的接著層、覆蓋層、和基板本身而言,作為傳輸損失的程度的指標之介電損耗正切(tan δ)的值只要是在0.01以下的水準,便不構成問題。因此,即使tan δ的值會因為溫度變化而或多或少地有所改變(drift)也能被接受。例如,當tan δ在常溫下的值為0.0100,而在高溫下的值為0.0110時,其變化量為0.0010,tan δ的變化率落於10%。 In general, printed circuit boards for high-frequency applications are required to have low transmission loss. In the past, even in high-frequency applications, as long as the transmission loss in the 1GHz band is small, it is sufficient. However, the adhesive layer, cover layer, and substrate itself of the printed circuit board are used as an index of the degree of transmission loss. As long as the value of the electrical loss tangent (tan δ) is below 0.01, there is no problem. Therefore, even if the value of tan δ drifts more or less due to temperature changes, it can be accepted. For example, when the value of tan δ at room temperature is 0.0100 and the value at high temperature is 0.0110, the amount of change is 0.0010, and the rate of change of tan δ falls to 10%.

但是,近年來係變得要求於3GHz以上的高頻帶之特性,為了減少傳輸損失,而尋求tan δ為更小的值,例如0.003以下其結果係即使 tan δ的值只有些微的變化,tan δ的變化率也會變大,例如,當tan δ在常溫的值為0.0030,而在高溫的值為0.0040時,其變化量為0.0010,但tan δ的變化率則增大為33.3%。因此,變得更需要基於溫度變化的tan δ之變化率為小的材料。 However, in recent years, the characteristics of the high frequency band above 3 GHz have become required. In order to reduce the transmission loss, a smaller value of tan δ has been sought, such as 0.003 or less. The value of tan δ only slightly changes, and the rate of change of tan δ will also increase. For example, when the value of tan δ at room temperature is 0.0030 and the value at high temperature is 0.0040, the amount of change is 0.0010, but the value of tan δ The rate of change increased to 33.3%. Therefore, a material with a small change rate of tan δ based on temperature change has become more necessary.

特別是在毫米波線路用基板(以下,稱為毫米波基板)用途的情況下,對於在高頻帶之基於溫度變化的tan δ的變化率為小(亦即,tan δ的溫度依賴性小)的要求更是變得更加嚴苛。對於使用了毫米波雷達用基板(以下,稱為毫米波雷達基板)之車載用毫米波雷達也有同樣嚴苛的要求。 Especially in the case of the use of a millimeter-wave circuit substrate (hereinafter referred to as a millimeter-wave substrate), the rate of change of tan δ based on temperature changes in the high frequency band is small (that is, the temperature dependence of tan δ is small) The requirements are becoming more stringent. The same stringent requirements are imposed on millimeter-wave radars for vehicles that use substrates for millimeter-wave radars (hereinafter referred to as millimeter-wave radar substrates).

此外,就基板用途而言,除了要求對tan δ的溫度依賴性小之外,還進一步要求阻燃性。此時,變得必需使用阻燃劑,但在現在係以無鹵(non-halogen)作為前提,故無法使用鹵系阻燃劑。 In addition, for substrate use, in addition to the small temperature dependence on tan δ, flame retardancy is further required. At this time, it becomes necessary to use a flame retardant, but it is currently based on a non-halogen (non-halogen) premise, so halogen-based flame retardants cannot be used.

在此,就「對於在高頻帶的介電特性優異以及介電特性對於溫度變化的偏移性小,展現優異的穩定性之印刷電路板用樹脂組成物」(專利文獻1的第0012段、第0015段等)而言,係揭示「一種印刷電路板用樹脂組成物,係含有:於分子中具有2個以上氰氧基之氰酸酯化合物及/或此等之預聚物、與於分子中含有至少一種具有聯苯基骨架之環氧樹脂之環氧樹脂」(專利文獻1)。 Here, the "resin composition for a printed circuit board that has excellent dielectric properties in a high frequency band and small deviation of dielectric properties with respect to temperature changes, and exhibits excellent stability" (Patent Document 1, paragraph 0012, Paragraph 0015, etc.), it is disclosed that "a resin composition for a printed circuit board contains: a cyanate ester compound having two or more cyano groups in the molecule and/or these prepolymers, and An epoxy resin containing at least one type of epoxy resin having a biphenyl skeleton in its molecule" (Patent Document 1).

然而,由於此種印刷電路板用樹脂組成物在25℃的比介電率(ε)之值為3.5以上,tan δ的值高達0.004以上,因此即使tan δ的溫度依賴性小,也還是難以使用於毫米波基板用途。此外,具體揭示的阻燃劑屬於鹵系阻燃劑。 However, since the specific permittivity (ε) of this resin composition for printed circuit boards at 25°C is 3.5 or more, and the value of tan δ is as high as 0.004 or more, it is difficult even if the temperature dependence of tan δ is small. Used for millimeter wave substrate applications. In addition, the specifically disclosed flame retardants belong to halogen-based flame retardants.

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-212689號公報 [Patent Document 1] JP 2010-212689 A

本發明係有鑑於上述情事者,目的在於提供一種毫米波基板用樹脂組成物,係樹脂組成物之硬化物係高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異,能夠使用作為毫米波基板用的絶緣體者。 The present invention is made in view of the above circumstances and aims to provide a resin composition for millimeter wave substrates. The cured resin composition of the resin composition has excellent high-frequency characteristics, small temperature dependence of tan δ, and excellent flame retardancy, and can be used As an insulator for millimeter wave substrates.

本發明係關於藉由具有下列構成而解決上述課題之毫米波基板用樹脂組成物、毫米波基板用接著膜、毫米波基板、毫米波雷達基板及半導體裝置。 The present invention relates to a resin composition for a millimeter wave substrate, an adhesive film for a millimeter wave substrate, a millimeter wave substrate, a millimeter wave radar substrate, and a semiconductor device that solve the above-mentioned problems by having the following configurations.

〔1〕一種毫米波基板用樹脂組成物,係包含:(A)氫化苯乙烯系彈性體、(B)具有聯苯基骨架之可交聯的化合物、以及(C)含有膦酸金屬鹽之阻燃劑,其中, [1] A resin composition for millimeter wave substrates, comprising: (A) a hydrogenated styrene elastomer, (B) a crosslinkable compound having a biphenyl skeleton, and (C) a metal salt containing phosphonic acid Flame retardants, of which,

相對於(A)成分、(B)成分與(C)成分之合計100質量份,(C)成分為15質量份至50質量份; The (C) component is 15 to 50 parts by mass relative to 100 parts by mass of the total of (A) component, (B) component and (C) component;

硬化物之在10GHz下之介電損耗正切係在120℃的值相對於在25℃的值之變化率為30%以下。 The change rate of the dielectric loss tangent of the hardened material at 10GHz at 120°C to the value at 25°C is 30% or less.

〔2〕上述〔1〕所述之毫米波基板用樹脂組成物,其中,(C)成分的膦酸金屬鹽為5質量份以上。 [2] The resin composition for a millimeter wave substrate according to the above [1], wherein the phosphonic acid metal salt of the component (C) is 5 parts by mass or more.

〔3〕上述〔1〕或〔2〕所述之毫米波基板用樹脂組成物,其中,在10GHz之介電損耗正切為0.0030以下。 [3] The resin composition for a millimeter wave substrate according to [1] or [2] above, wherein the dielectric loss tangent at 10 GHz is 0.0030 or less.

〔4〕上述〔1〕至〔3〕中任一者所述之毫米波基板用樹脂組成物,其中,相對於(A)成分與(B)成分之合計100質量份,(A)成分為50至80質量份。 [4] The resin composition for a millimeter wave substrate according to any one of [1] to [3] above, wherein the (A) component is 100 parts by mass of the total of the (A) component and (B) component 50 to 80 parts by mass.

〔5〕上述〔1〕至〔4〕之任一者所述之毫米波基板用樹脂組成物,其中,(A)成分為苯乙烯-乙烯/丁烯-苯乙烯嵌段共聚物。 [5] The resin composition for a millimeter wave substrate according to any one of [1] to [4] above, wherein the component (A) is a styrene-ethylene/butylene-styrene block copolymer.

〔6〕一種毫米波基板用接著膜,係包含上述〔1〕至〔5〕中任一者所述之毫米波基板用樹脂組成物。 [6] An adhesive film for millimeter wave substrates, comprising the resin composition for millimeter wave substrates described in any one of [1] to [5] above.

〔7〕一種毫米波基板,係包含上述〔1〕至〔5〕中任一者所述之毫米波基板用樹脂組成物之硬化物。 [7] A millimeter wave substrate comprising a cured product of the resin composition for a millimeter wave substrate described in any one of [1] to [5] above.

〔8〕一種毫米波雷達基板,係包含上述〔1〕至〔5〕中任一者所述之毫米波基板用樹脂組成物之硬化物。 [8] A millimeter wave radar substrate comprising a cured product of the resin composition for a millimeter wave substrate described in any one of [1] to [5] above.

〔9〕一種半導體裝置,係包含上述〔7〕所述之毫米波基板或上述〔8〕所述之毫米波雷達基板。 [9] A semiconductor device comprising the millimeter wave substrate described in [7] above or the millimeter wave radar substrate described in [8] above.

依據本發明〔1〕,可提供一種毫米波基板用樹脂組成物,係樹脂組成物之硬化物的高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異,能夠使用作為毫米波基板用的絶緣體者。 According to the present invention [1], a resin composition for a millimeter wave substrate can be provided. The cured product of the resin composition has excellent high-frequency characteristics, small temperature dependence of tan δ, and excellent flame retardancy, and can be used as a millimeter wave Insulators for substrates.

依據本發明〔7〕,可提供一種毫米波基板,係高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異者。依據本發明〔8〕,可提供一種毫米波雷達基板,係高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異者。 According to the present invention [7], it is possible to provide a millimeter wave substrate having excellent high-frequency characteristics, small temperature dependence of tan δ, and excellent flame retardancy. According to the present invention [8], a millimeter wave radar substrate can be provided, which has excellent high-frequency characteristics, small temperature dependence of tan δ, and excellent flame retardancy.

依據本發明〔9〕,可提供一種半導體裝置,係可靠性高的半導體裝置,其中包含高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異之毫米波基板或毫米波雷達基板(以下,亦稱為基板)。 According to the present invention [9], it is possible to provide a semiconductor device which is a highly reliable semiconductor device including a millimeter wave substrate or millimeter wave radar substrate with excellent high frequency characteristics, small temperature dependence of tan δ, and excellent flame retardancy (Hereinafter, also referred to as substrate).

以下,詳細說明本發明之適合的實施形態。但是,本發明並不限於以下之實施形態。另外,本說明書中,毫米波基板和毫米波雷達基板所使用的頻率區域(frequency domain)係指3GHz至300GHz。 Hereinafter, a suitable embodiment of the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In addition, in this specification, the frequency domain (frequency domain) used for the millimeter wave substrate and the millimeter wave radar substrate refers to 3 GHz to 300 GHz.

〔毫米波基板用樹脂組成物〕 〔Resin composition for millimeter wave substrate〕

本發明之毫米波基板用樹脂組成物(以下,稱為基板用樹脂組成物)係含有(A)氫化苯乙烯系彈性體、(B)具有聯苯基骨架之可交聯的化合物、以及(C)含有膦酸金屬鹽之阻燃劑,其中, The resin composition for millimeter wave substrates of the present invention (hereinafter referred to as the resin composition for substrates) contains (A) a hydrogenated styrene elastomer, (B) a crosslinkable compound having a biphenyl skeleton, and ( C) Flame retardant containing phosphonic acid metal salt, of which,

相對於(A)成分、(B)成分與(C)成分之合計100質量份,(C)成分為5質量份至50質量份, The (C) component is 5 parts by mass to 50 parts by mass with respect to 100 parts by mass of the total of (A) component, (B) component and (C) component,

硬化物之在10GHz下之介電損耗正切係在120℃的值相對於在25℃的值之變化率為30%以下。 The change rate of the dielectric loss tangent of the hardened material at 10GHz at 120°C to the value at 25°C is 30% or less.

屬於(A)成分之氫化苯乙烯系彈性體係有助於膜的性狀、耐熱性等。此外,係賦予於高頻帶中為優異的電特性、低介電率、低介電損耗正切。再者,tan δ的溫度依賴性小。此外,因為(A)成分具有可將硬化後的基板用樹脂組成物之來自外部的應力予以緩和之適度的柔軟性,故可緩和在基板內所產生之應力。(A)成分可列舉:苯乙烯-乙烯/丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯/丙烯-苯乙烯嵌段共聚物(SEPS)、苯乙烯-(乙烯-乙烯/丙烯)-苯乙烯嵌段共聚物(SEEPS),從耐熱性的觀點來看,係以苯乙烯-乙烯/丁烯-苯乙烯嵌段共聚物(SEBS)為較佳。(A)成分較佳為重量平均分子量為30,000至200,000者。重量平均分子量係藉由凝膠滲透層析法(GPC)並使用依據標準聚苯乙烯之校正曲線之值。(A)成分可單獨使用,亦可併用兩種以上。 The hydrogenated styrene-based elastic system belonging to the component (A) contributes to the properties and heat resistance of the film. In addition, it provides excellent electrical characteristics, low dielectric constant, and low dielectric loss tangent in the high frequency band. Furthermore, the temperature dependence of tan δ is small. In addition, since the component (A) has moderate flexibility that can relax the external stress of the resin composition for a substrate after curing, it can relax the stress generated in the substrate. (A) Component can include: styrene-ethylene/butylene-styrene block copolymer (SEBS), styrene-ethylene/propylene-styrene block copolymer (SEPS), styrene-(ethylene-ethylene/ From the viewpoint of heat resistance, propylene)-styrene block copolymer (SEEPS) is preferably styrene-ethylene/butylene-styrene block copolymer (SEBS). (A) The component is preferably one having a weight average molecular weight of 30,000 to 200,000. The weight average molecular weight is obtained by gel permeation chromatography (GPC) using a calibration curve based on standard polystyrene. (A) A component may be used independently, and may use 2 or more types together.

就(B)成分之具有聯苯基骨架之可交聯的化合物而言,係硬化物之Tg高,可使硬化後的基板用樹脂組成物不易產生經時變化,而可維持基板的長期可靠性。此外,tan δ的溫度依賴性小。就具有聯苯基骨架之可交聯的化合物而言,可列舉:於兩末端具有鍵結有乙烯基之苯基的聚醚化合物(以下,稱為改質PPE)、具有聯苯基骨架之環氧樹脂等。改質PPE和具有聯苯基骨架之環氧樹脂,因為樹脂中的親水基數量少,故吸濕性小且耐濕性優異。此外,此等化合物之絶緣性優異,即使由基板用樹脂組成物所形成之基板的厚度變薄,亦可維持基板的可靠性。 As for the crosslinkable compound with biphenyl skeleton of component (B), the Tg of the cured product is high, so that the resin composition for the substrate after curing is not easy to change with time, and the long-term reliability of the substrate can be maintained Sex. In addition, the temperature dependence of tan δ is small. As for the cross-linkable compound having a biphenyl skeleton, a polyether compound having a phenyl group bonded with a vinyl group at both ends (hereinafter referred to as modified PPE), a compound having a biphenyl skeleton Epoxy and so on. Modified PPE and epoxy resins with a biphenyl skeleton have low moisture absorption and excellent moisture resistance because the number of hydrophilic groups in the resin is small. In addition, these compounds are excellent in insulating properties, and even if the thickness of the substrate formed of the resin composition for the substrate is reduced, the reliability of the substrate can be maintained.

就於兩末端具有鍵結有乙烯基之苯基的聚醚化合物而言,可列舉通式(1)所示之化合物(以下,稱為改質PPE); As for the polyether compound having a phenyl group bonded with a vinyl group at both ends, a compound represented by the general formula (1) (hereinafter referred to as modified PPE) can be cited;

Figure 108144101-A0202-12-0007-1
Figure 108144101-A0202-12-0007-1

Figure 108144101-A0202-12-0007-2
Figure 108144101-A0202-12-0007-2

Figure 108144101-A0202-12-0007-3
Figure 108144101-A0202-12-0007-3

(式中, (In the formula,

R1、R2、R3、R4、R5、R6、R7可為相同或不同,而係氫原子、鹵原子、烷基、鹵化烷基或苯基, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 may be the same or different, and are hydrogen atoms, halogen atoms, alkyl groups, halogenated alkyl groups or phenyl groups,

-(O-X-O)-係以構造式(2)表示,其中,R8、R9、R10、R14、R15可為相同或不同,而係鹵原子或是碳數6以下之烷基或苯基,R11、R12、R13可為相同或不同,而係氫原子、鹵原子或是碳數6以下之烷基或苯基, -(OXO)- is represented by structural formula (2), wherein R 8 , R 9 , R 10 , R 14 , and R 15 may be the same or different, and are halogen atoms or alkyl groups with less than 6 carbon atoms or Phenyl, R 11 , R 12 , and R 13 may be the same or different, and are hydrogen atoms, halogen atoms, or alkyl groups or phenyl groups with less than 6 carbon atoms,

-(Y-O)-係一種構造式(3)所示之構造,或兩種以上的構造式(3)所示之構造無規地排列者,其中,R16、R17可為相同或不同,而係鹵原子或是碳數6以下之烷基或苯基,R18、R19可為相同或不同,而係氫原子、鹵原子或是碳數6以下之烷基或苯基, -(YO)- is a structure shown in structural formula (3), or two or more structures shown in structural formula (3) are arranged randomly, wherein R 16 and R 17 can be the same or different, And it is a halogen atom or an alkyl group or phenyl group with a carbon number of 6 or less, R 18 and R 19 may be the same or different, and are hydrogen atoms, a halogen atom, or an alkyl group or a phenyl group with a carbon number of 6 or less,

Z為碳數1以上的有機基,視情況亦包含氧原子、氮原子、硫原子、鹵原子, Z is an organic group with a carbon number of 1 or more, and optionally includes oxygen, nitrogen, sulfur, and halogen atoms,

a、b顯示至少一者不為0的0至300之整數, a, b show at least one of the integers from 0 to 300 that is not 0,

c、d顯示0或1之整數)。 c, d show an integer of 0 or 1).

關於通式(1)所示之改質PPE的-(O-X-O)-的構造式(2)中,R8、R9、R10、R14、R15較佳為碳數3以下之烷基,R11、R12、R13較佳為氫原子或碳數3以下之烷基。具體而言,可列舉構造式(4)。 Regarding the -(OXO)- structural formula (2) of the modified PPE represented by the general formula (1), R 8 , R 9 , R 10 , R 14 , and R 15 are preferably alkyl groups with 3 or less carbon atoms , R 11 , R 12 , and R 13 are preferably a hydrogen atom or an alkyl group with 3 or less carbon atoms. Specifically, structural formula (4) can be cited.

Figure 108144101-A0202-12-0008-4
Figure 108144101-A0202-12-0008-4

關於-(Y-O)-之構造式(3)中,R16、R17較佳為碳數3以下之烷基,R18、R19較佳為氫原子或碳數3以下之烷基。具體而言,可列舉構造式(5)或(6)。 Regarding the structural formula (3) of -(YO)-, R 16 and R 17 are preferably an alkyl group having 3 or less carbon atoms, and R 18 and R 19 are preferably a hydrogen atom or an alkyl group having 3 or less carbon atoms. Specifically, structural formula (5) or (6) can be cited.

Figure 108144101-A0202-12-0008-5
Figure 108144101-A0202-12-0008-5

Z可列舉碳數3以下之伸烷基,具體而言為亞甲基。 Examples of Z include an alkylene group having 3 or less carbon atoms, and specifically a methylene group.

a、b係顯示至少一者不為0的0至300之整數,較佳為0至30之整數。 a and b show at least one of the integers from 0 to 300 that is not 0, preferably an integer from 0 to 30.

較佳為數量平均分子量1000至4500之通式(1)的改質PPE。更佳的數量平均分子量為1000至3000。上述之改質PPE可單獨使用,亦可組合兩種以上使用。 Preferably, it is a modified PPE of general formula (1) with a number average molecular weight of 1,000 to 4500. More preferably, the number average molecular weight is 1,000 to 3,000. The above-mentioned modified PPE can be used alone or in combination of two or more.

從基板用樹脂組成物之接著強度提升、相較於其它構造的環氧樹脂係tan δ的溫度依賴性減小之觀點來看,以具有聯苯基骨架之環氧樹脂為較佳。此外,較佳係環氧當量為150至300之分子中不含羥基者。然而,亦可不含具有聯苯基骨架之環氧樹脂。於某些態樣中,基板用樹脂組成物係實質上不含環氧樹脂。 From the viewpoints that the adhesive strength of the resin composition for a substrate is improved and the temperature dependence of tan δ is reduced compared to epoxy resins of other structures, an epoxy resin having a biphenyl skeleton is preferred. In addition, it is preferably one that does not contain a hydroxyl group in the molecule having an epoxy equivalent of 150 to 300. However, the epoxy resin having a biphenyl skeleton may not be included. In some aspects, the resin composition for a substrate does not substantially contain epoxy resin.

(B)成分較佳為進一步含有起始劑或硬化劑。作為改質PPE用的起始劑可列舉有機過氧化物,作為具有聯苯基骨架之環氧樹脂的硬化劑可列舉酚系硬化劑、胺系硬化劑、咪唑系硬化劑、酸酐系硬化劑等。特別是從使對於具有聯苯基骨架之環氧樹脂之硬化性、接著性、減小tan δ的溫度依賴性的觀點來看,係以咪唑系硬化劑為較佳。(B)成分可單獨使用,為併用兩種以上。 The component (B) preferably further contains an initiator or a hardening agent. Examples of the initiator for the modified PPE include organic peroxides, and examples of the hardeners for epoxy resins having a biphenyl skeleton include phenol hardeners, amine hardeners, imidazole hardeners, and acid anhydride hardeners. Wait. In particular, from the viewpoint of reducing the temperature dependence of tan δ on the curability and adhesiveness of an epoxy resin having a biphenyl skeleton, an imidazole-based curing agent is preferred. (B) The component may be used alone, or two or more of them may be used in combination.

就(C)成分之含有膦酸金屬鹽的阻燃劑而言,係可列舉Me(POOR20R21)f(式中,M為Li、Na、K、Mg、Ca、Sr、Ba、Al、Ge、Sn、Sb、Bi、Zn、Ti、Zr、Mn、Fe或Ce,R20、R21分別為碳數1至5個的脂肪族烴基或芳香族煙基,e以及f為1至9之整數)。此等之中,從阻燃性的觀點以及減小tan δ的溫度依賴性的觀點來看,較佳為膦酸鋁,更佳為二烷基膦酸鋁,又更佳為二乙基膦酸鋁。 On the metal phosphinate-containing flame retardant component (C) in terms of, based include M e (POOR 20 R 21) f ( the formula, M is Li, Na, K, Mg, Ca, Sr, Ba, Al, Ge, Sn, Sb, Bi, Zn, Ti, Zr, Mn, Fe or Ce, R 20 and R 21 are aliphatic hydrocarbon groups or aromatic nicotine groups with 1 to 5 carbon atoms, and e and f are 1 Up to 9). Among these, from the viewpoint of flame retardancy and the viewpoint of reducing the temperature dependence of tan δ, aluminum phosphonate is preferred, aluminum dialkylphosphonate is more preferred, and diethyl phosphine is more preferred. Acid aluminum.

就作為(C)成分之膦酸金屬鹽以外的能夠使用的阻燃劑而言,可列舉係無鹵而且tan δ的溫度依賴性小之阻燃劑。具體而言,可列舉:雙酚二(二甲苯基)磷酸酯、10-(2,5-二羥基苯基)-10-H-9-氧雜-10-磷雜菲-10-氧化物等。(C)成分可單獨使用亦可併用兩種以上。 The flame retardants that can be used other than the phosphonic acid metal salt as the component (C) include flame retardants that are halogen-free and have a small temperature dependence of tan δ. Specifically, examples include: bisphenol bis(xylenyl) phosphate, 10-(2,5-dihydroxyphenyl)-10-H-9-oxa-10-phosphaphenanthrene-10-oxide Wait. (C) A component may be used individually or in combination of 2 or more types.

相對於(A)成分與(B)成分之合計100質量份,(A)成分較佳為50至80質量份,更佳為55至80質量份。藉由使(A)成分的含量成為(B)成分的含量以上,基板用樹脂組成物之剝離強度容易變高,而且,耐熱可靠性(例如在125℃、1000小時以上)變得容易提升。 The (A) component is preferably 50 to 80 parts by mass, more preferably 55 to 80 parts by mass with respect to 100 parts by mass of the total of (A) component and (B) component. When the content of the (A) component is greater than or equal to the content of the (B) component, the peel strength of the resin composition for a substrate is likely to increase, and the heat resistance reliability (for example, at 125° C., 1000 hours or more) is easily improved.

此外,相對於(A)成分、(B)成分與(C)成分之合計100質量份,(A)成分較佳為32.5至70質量份,更佳為40至70質量份,又更佳為40至64質量份。 In addition, with respect to 100 parts by mass of the total of (A) component, (B) component and (C) component, (A) component is preferably 32.5 to 70 parts by mass, more preferably 40 to 70 parts by mass, and still more preferably 40 to 64 parts by mass.

從賦予阻燃性以及高頻特性的觀點來看,相對於(A)成分、(B)成分與(C)成分之合計100質量份,(C)成分係15質量份至50質量份。 From the viewpoint of imparting flame retardancy and high-frequency characteristics, the (C) component is 15 to 50 parts by mass relative to 100 parts by mass of the total of the (A) component, (B) component, and (C) component.

在此,當(C)成分僅為膦酸金屬鹽時,相對於(A)成分、(B)成分與(C)成分之合計100質量份,膦酸金屬鹽係以20至35質量份為較佳。 Here, when the (C) component is only the phosphonic acid metal salt, the phosphonic acid metal salt is 20 to 35 parts by mass relative to the total of 100 parts by weight of the (A) component, (B) component and (C) component Better.

在(C)成分為由膦酸金屬鹽與其它阻燃劑所成的情況下,從阻燃性、高頻特性、接著性、耐熱性的觀點來看,係以相對於(A)成分、(B)成分與(C)成分之合計100質量份,膦酸金屬鹽為5質量份以上未達15質量份,其它阻燃劑為20至40質量份,而且屬於(C)成分之阻燃劑之合計為25至50質量份為較佳。 When the (C) component is composed of a phosphonic acid metal salt and other flame retardants, from the standpoint of flame retardancy, high frequency characteristics, adhesiveness, and heat resistance, it is relative to the (A) component. The total of component (B) and component (C) is 100 parts by mass, phosphonic acid metal salt is more than 5 parts by mass but less than 15 parts by mass, and other flame retardants are 20-40 parts by mass, and belong to the flame retardant of component (C) The total amount of the agents is preferably 25 to 50 parts by mass.

又,基板用樹脂組成物係可在無損於本發明之效果的範圍含有無機填料、矽烷偶合劑、消泡劑、分散助劑、抗氧化劑、消泡劑、調 平劑、搖變劑、抗浮白(anti-blooming)劑、抗結塊劑等添加劑和有機溶劑。 In addition, the resin composition for substrates may contain inorganic fillers, silane coupling agents, defoamers, dispersion aids, antioxidants, defoamers, and conditioning agents within a range that does not impair the effects of the present invention. Additives such as leveling agents, thixotropic agents, anti-blooming agents, anti-caking agents and organic solvents.

從改善硬化物物性的觀點來看,無機填料可使用一般的無機填料。就低熱膨脹係數之點而言,較佳為SiO2;就得到所期望的硬化物物性之點而言,較佳為選自由滑石、高嶺土、BaSO4、CaCO3、MgO、Al2O3、SiO2、AlN、BN、金鋼石填料、ZnO、SiC所組成群組中之至少一種以上的無機填料。此等填料可經表面處理。 From the viewpoint of improving the physical properties of the cured product, general inorganic fillers can be used as the inorganic filler. In terms of low thermal expansion coefficient, SiO 2 is preferred; in terms of obtaining desired hardened physical properties, it is preferably selected from talc, kaolin, BaSO 4 , CaCO 3 , MgO, Al 2 O 3 , At least one inorganic filler selected from the group consisting of SiO 2 , AlN, BN, diamond filler, ZnO, and SiC. These fillers can be surface treated.

無機填料的平均粒徑(非粒狀的情況為其平均最大粒徑),並無特別限定,但是為了減少基於填料粒子表面的吸濕所致之樹脂硬化物的耐濕性減低,並且得到所期望的厚度之塗膜,故以0.05至20μm為較佳。無機填料的平均粒徑未達0.05μm時,因為比表面積大,故在無機填料表面的吸濕量增大,而有樹脂硬化物之耐濕性劣化之虞。超過20μm時,則相對於必須的塗膜厚度為過大,而有難以得到所期望的厚度之膜厚之虞。再者,在使用於精細圖案的基板中時,由於相對於圖案的大小,填料為過大,因此會有圖案上之填料材質與樹脂局部化而致使介電損失增加之虞。無機填料的平均粒徑更佳為1至10μm,又更佳係最大粒徑為10μm以下。藉由將最大粒徑設為10μm以下,變得容易防止在10GHz以上的頻帶域的介電損失增大。在此,無機填料的平均粒徑以及最大粒徑係藉由雷射散射繞射式粒度分布測定裝置進行測定。無機填料可單獨使用,亦可併用兩種以上。 The average particle diameter of the inorganic filler (the average maximum particle diameter in the case of non-granular form) is not particularly limited, but in order to reduce the moisture resistance of the cured resin due to the moisture absorption on the surface of the filler particles, and obtain the The desired thickness of the coating film is therefore preferably 0.05 to 20 μm. When the average particle size of the inorganic filler is less than 0.05 μm, the moisture absorption on the surface of the inorganic filler increases due to the large specific surface area, and the moisture resistance of the cured resin may deteriorate. If it exceeds 20 μm, the thickness of the coating film is too large for the necessary thickness, and it may be difficult to obtain the desired thickness. Furthermore, when used in a finely patterned substrate, since the filler is too large relative to the size of the pattern, the filler material and resin on the pattern may be localized, which may increase the dielectric loss. The average particle size of the inorganic filler is more preferably 1 to 10 μm, and more preferably the maximum particle size is 10 μm or less. By setting the maximum particle size to 10 μm or less, it becomes easy to prevent the dielectric loss from increasing in the frequency band above 10 GHz. Here, the average particle size and maximum particle size of the inorganic filler are measured by a laser scattering diffraction type particle size distribution measuring device. The inorganic filler may be used alone, or two or more of them may be used in combination.

有機溶劑可列舉:芳香族系溶劑,例如甲苯、二甲苯等;酮系溶劑,例如甲基乙基酮、甲基異丁基酮等;此外,可列舉環己酮、二 甲基甲醯胺、1-甲基-2-吡咯啶酮等高沸點溶劑等。有機溶劑可單獨使用,也可組合兩種以上使用。此外,有機溶劑的使用量並無特別限定,若能對應樹脂組成物之塗佈方法,而以成為各自的較佳黏度的方式予以調整即可。具體而言,能夠以固形分成為20至80質量%的方式,使用有機溶劑。 Examples of organic solvents include aromatic solvents, such as toluene, xylene, etc.; ketone solvents, such as methyl ethyl ketone, methyl isobutyl ketone, etc.; in addition, cyclohexanone, two High boiling point solvents such as methylformamide and 1-methyl-2-pyrrolidone. The organic solvent may be used alone or in combination of two or more. In addition, the amount of the organic solvent used is not particularly limited, as long as it can be adjusted so as to achieve the respective preferred viscosity according to the coating method of the resin composition. Specifically, an organic solvent can be used so that the solid content becomes 20 to 80% by mass.

基板用樹脂組成物能夠藉由使含有(A)至(C)成分等之原料於有機溶劑中溶解或分散等而獲得。該等原料的溶解或分散等的裝置並無特別限定,但可使用具備加熱裝置之攪拌機、溶解器(dissolver)、擂潰機、三輥磨機、球磨機、行星式混合機、珠磨機等。而且,可將此等裝置適當組合使用。 The resin composition for a substrate can be obtained by dissolving or dispersing raw materials containing components (A) to (C) in an organic solvent. The device for dissolving or dispersing these raw materials is not particularly limited, but a stirrer, dissolver, crusher, three-roll mill, ball mill, planetary mixer, bead mill, etc., equipped with a heating device can be used . Moreover, these devices can be used in appropriate combination.

基板用樹脂組成物可例如在130至220℃,以30至180分鐘使之熱硬化。基板用樹脂組成物係可對應所期望的塗佈方法而適當地選擇黏度為0.1至100Pa‧s者,該黏度為使用E型黏度計而以10rpm、25℃測定到之值。 The resin composition for a substrate can be thermally cured at 130 to 220°C for 30 to 180 minutes, for example. The resin composition for a substrate can be appropriately selected to have a viscosity of 0.1 to 100 Pa•s in accordance with the desired coating method, and the viscosity is a value measured at 10 rpm and 25° C. using an E-type viscometer.

基板用樹脂組成物就硬化物在10GHz之tan δ而言,在120℃的值相對於在25℃的值之變化率為30%以下。於10GHz之tan δ係在120℃的值相對於在25℃的值之變化率大於30%的情況下,並無法滿足市場的要求。於10GHz之tan δ之在120℃的值相對於在25℃的值之變化率係以在20%以下為佳,更佳為10%以下。 Regarding the tan δ of the cured product at 10 GHz, the resin composition for a substrate has a rate of change of 30% or less at a value at 120°C to a value at 25°C. When the change rate of tan δ at 10GHz at 120°C to 25°C is greater than 30%, it cannot meet market requirements. The change rate of the value of tan δ at 10GHz at 120°C relative to the value at 25°C is preferably 20% or less, more preferably 10% or less.

從基板用樹脂組成物在其頻帶域的用途之觀點來看,基板用樹脂組成物在10GHz之介電損耗正切係以0.0030以下為較佳。基板用樹脂組成物係可使用於電路板的接著層、覆蓋層或基板本身。 From the viewpoint of the use of the resin composition for a substrate in its frequency band, the dielectric loss tangent of the resin composition for a substrate at 10 GHz is preferably 0.0030 or less. The resin composition system for a substrate can be used for an adhesive layer, a cover layer, or the substrate itself of a circuit board.

〔使用毫米波基板用樹脂組成物之製品〕 〔Products using resin composition for millimeter wave substrate〕

本發明之毫米波基板用接著膜係包含上述之毫米波基板用樹脂組成物。該毫米波基板用接著膜可藉由基板用樹脂組成物來形成。 The adhesive film for millimeter wave substrates of the present invention includes the above-mentioned resin composition for millimeter wave substrates. The adhesive film for a millimeter wave substrate can be formed from a resin composition for a substrate.

毫米波基板用接著膜可藉由將基板用樹脂組成物塗佈在所期望的支撐物後,進行乾燥而獲得。支撐物並無特別限定,可列舉:銅、鋁等金屬箔;聚酯樹脂、聚乙烯樹脂、聚對苯二甲酸乙二酯樹脂等有機膜等。支撐物可經聚矽氧系化合物等進行離型處理。 The adhesive film for a millimeter wave substrate can be obtained by coating the resin composition for a substrate on a desired support, and then drying it. The support is not particularly limited, and examples include metal foils such as copper and aluminum; organic films such as polyester resins, polyethylene resins, and polyethylene terephthalate resins. The support can be released by polysiloxane compounds.

將基板用樹脂組成物塗佈於支撐物之方法並無特別限定,但就薄膜化/調控膜厚之點而言,較佳為微凹版(microgravia)法、狹縫模頭塗佈(slot die)法、刮刀(doctor blade)法。藉由狹縫模頭塗佈法,可得到熱硬化後的厚度例如為10至300μm的毫米波基板用接著膜。 The method of applying the resin composition for a substrate to the support is not particularly limited, but in terms of thinning/controlling the film thickness, a microgravia method or a slot die coating is preferable. ) Method, doctor blade method. By the slit die coating method, an adhesive film for a millimeter wave substrate having a thickness of 10 to 300 μm after thermal curing can be obtained.

乾燥條件係可因應基板用樹脂組成物所使用的有機溶劑的種類和量、塗佈的厚度等來適當進行設定,例如可在50至120℃下,進行1至30分鐘左右。如此方式所獲得之絶緣性的毫米波基板用接著膜係具有良好的保存穩定性。又,毫米波基板用接著膜係可在所期望的時機從支撐物剝離。 The drying conditions can be appropriately set according to the type and amount of the organic solvent used in the resin composition for the substrate, the thickness of the coating, and the like. For example, it can be performed at 50 to 120°C for about 1 to 30 minutes. The insulating adhesive film for millimeter wave substrates obtained in this way has good storage stability. In addition, the adhesive film system for a millimeter wave substrate can be peeled from the support at a desired timing.

毫米波基板用接著膜係可例如在130至220℃,以30至180分鐘使之熱硬化。 The adhesive film for the millimeter wave substrate can be thermally cured at 130 to 220° C. for 30 to 180 minutes, for example.

毫米波基板用接著膜的厚度較佳為10μm以上300μm以下,更佳為20μm以上200μm以下。未達10μm時,會有變得無法得到所 期望的絶緣性、塗膜的強度、和耐久性之虞。超過300μm時,硬化時的應力會變大,而基板會有產生翹曲等不良狀況之虞。 The thickness of the adhesive film for a millimeter wave substrate is preferably 10 μm or more and 300 μm or less, and more preferably 20 μm or more and 200 μm or less. When it is less than 10μm, it may become impossible to obtain The desired insulation, the strength of the coating film, and the durability. When it exceeds 300 μm, the stress during hardening will increase, and the substrate may be warped and other defects.

本發明之毫米波基板係包含上述的毫米波基板用樹脂組成物之硬化物。亦即,包含上述的毫米波基板用接著膜的硬化物。 The millimeter wave substrate of the present invention is a cured product containing the resin composition for the millimeter wave substrate described above. That is, the cured product includes the adhesive film for millimeter wave substrates described above.

本發明之毫米波雷達基板係包含上述的毫米波基板用樹脂組成物之硬化物。亦即,包含上述的毫米波基板用接著膜的硬化物。 The millimeter wave radar substrate of the present invention is a cured product containing the resin composition for the millimeter wave substrate described above. That is, the cured product includes the adhesive film for millimeter wave substrates described above.

本發明之半導體裝置係包含上述的毫米波基板或上述的毫米波雷達基板。 The semiconductor device of the present invention includes the millimeter wave substrate described above or the millimeter wave radar substrate described above.

[實施例] [Example]

關於本發明,係藉由實施例進行說明,但本發明並不限定於此等實施例。又,於以下之實施例中,份、%在未另外言明時,即指質量份、質量%。 The present invention is explained by examples, but the present invention is not limited to these examples. In addition, in the following examples, parts and% refer to parts by mass and% by mass unless otherwise stated.

表1至表3所記載之實施例/比較例所使用之原料係如以下所示。 The raw materials used in the examples/comparative examples described in Table 1 to Table 3 are as follows.

G1652MU:Kraton polymer製之氫化苯乙烯系彈性體SEBS G1652MU: Hydrogenated styrene elastomer SEBS made by Kraton polymer

OPE-2St 2200:三菱瓦斯化學製之苯乙烯末端改質PPE寡聚物(分子量:Mn2200) OPE-2St 2200: Styrene end-modified PPE oligomer manufactured by Mitsubishi Gas Chemical (Molecular Weight: Mn2200)

YX4000HK:三菱化學製之聯苯基骨架環氧樹脂 YX4000HK: Biphenyl skeleton epoxy resin manufactured by Mitsubishi Chemical

OP935:後述化學式所示之clariant chemicals製之二乙基膦酸鋁(膦酸鋁鹽): OP935: Aluminum diethyl phosphonate (aluminum phosphonate) made by clariant chemicals shown in the chemical formula below:

Figure 108144101-A0202-12-0015-6
Figure 108144101-A0202-12-0015-6

KBE-846:信越化學製之矽烷偶合劑雙(三乙氧基矽基丙基)四硫醚 KBE-846: Silane coupling agent bis(triethoxysilylpropyl) tetrasulfide manufactured by Shin-Etsu Chemical

KBM-573:信越化學製之矽烷偶合劑N-苯基-3-胺基丙基三甲氧基矽烷 KBM-573: Silane coupling agent N-phenyl-3-aminopropyl trimethoxysilane manufactured by Shin-Etsu Chemical

PERCUMYL D:日本油脂製之有機過氧化物雙異苯丙基過氧化物 PERCUMYL D: Organic peroxide bis-isophenylpropyl peroxide made by Japan Oil

EH-2021:ADEKA製之改質咪唑 EH-2021: Modified imidazole made by ADEKA

FB-3SDX:denka製之球狀二氧化矽填料(平均粒徑:3.4μm) FB-3SDX: spherical silica filler made by denka (average particle size: 3.4μm)

PX-200:後述化學式所示之大八化學工業製之間苯二酚雙-二(二甲苯基)磷酸酯: PX-200: Dihydroxybenzene bis-bis(xylenyl) phosphate shown in the chemical formula below:

Figure 108144101-A0202-12-0015-7
Figure 108144101-A0202-12-0015-7

PX-202:後述化學式所示之大八化學工業製之雙酚雙-二(二甲苯基)磷酸酯: PX-202: Bisphenol bis-bis(xylyl) phosphate produced by Daha Chemical Industry as shown in the following chemical formula:

Figure 108144101-A0202-12-0015-8
Figure 108144101-A0202-12-0015-8

TPP:下列的化學式所示之大八化學工業製之三苯基磷酸酯: TPP: Triphenyl phosphate produced by Dahachi Chemical Industry as shown in the following chemical formula:

Figure 108144101-A0202-12-0016-9
Figure 108144101-A0202-12-0016-9

FP-600:後述化學式所示之ADEKA製之雙酚A雙-二苯基磷酸酯: FP-600: Bisphenol A bis-diphenyl phosphate produced by ADEKA shown in the following chemical formula:

Figure 108144101-A0202-12-0016-10
Figure 108144101-A0202-12-0016-10

FP-100:後述化學式所示之伏見製藥所製之苯氧基環膦氮烯: FP-100: Phenoxy cyclophosphazene produced by Fushimi Pharmaceutical as shown in the following chemical formula:

Figure 108144101-A0202-12-0016-11
Figure 108144101-A0202-12-0016-11

HCA-HQ-HS:後述化學式所示之三光製之10-(2,5-二羥基苯基)-10-H-9-氧雜-10-磷雜菲-10-氧化物: HCA-HQ-HS: 10-(2,5-dihydroxyphenyl)-10-H-9-oxa-10-phosphaphenanthrene-10-oxide produced by Sanko, shown in the following chemical formula:

Figure 108144101-A0202-12-0017-13
Figure 108144101-A0202-12-0017-13

HCA:後述化學式所示之三光製之9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物: HCA: 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide produced by Sanko, shown in the following chemical formula:

Figure 108144101-A0202-12-0017-12
Figure 108144101-A0202-12-0017-12

TR2003:JSR製之非氫化苯乙烯系彈性體SBS TR2003: Non-hydrogenated styrene elastomer SBS manufactured by JSR

〔實施例1至9,比較例1至11〕 [Examples 1 to 9, Comparative Examples 1 to 11]

依表1至3所示之配方(質量份)而計量各成分後,在先投入了預定量的甲苯之加熱攪拌機中投入(A)成分或(A’)成分,以及(B)成分,在70℃、常壓下使攪拌葉片以轉速35rpm旋轉,同時進行2小時的溶解混 合。之後,在冷卻至常溫後,投入(C)成分或(C’)成分,以及其它成分,使攪拌葉片以轉速60rpm旋轉,同時進行攪拌混合1小時。其次,在攪拌物中,以使成為適合塗佈的黏度之方式添加預定量的甲苯,進行攪拌並稀釋。之後,使用濕式微粒化裝置(吉田機械興業股份有限公司製,型號:nanomizer MN2-2000AR),使樹脂組成物分散。 After measuring each component according to the formula (parts by mass) shown in Tables 1 to 3, put the (A) component or (A') component, and (B) component in the heating mixer with a predetermined amount of toluene first, and Rotate the stirring blade at a speed of 35 rpm at 70°C and normal pressure while dissolving and mixing for 2 hours Together. Then, after cooling to normal temperature, the (C) component or (C') component, and other components were added, and the stirring blade was rotated at 60 rpm while stirring and mixing for 1 hour. Next, in the stirring material, a predetermined amount of toluene is added so as to have a viscosity suitable for coating, followed by stirring and dilution. After that, a wet micronizer (manufactured by Yoshida Machinery Co., Ltd., model: nanomizer MN2-2000AR) was used to disperse the resin composition.

將如此方式所獲得之含樹脂組成物的塗佈液塗佈在支撐物(經施以離型處理的PET膜)的單面,並在100℃使之乾燥,藉此獲得附支撐物的毫米波基板用接著膜(厚度100μm)。 The coating solution containing the resin composition obtained in this way was coated on one side of the support (PET film subjected to release treatment) and dried at 100°C, thereby obtaining a millimeter with a support Adhesive film for wave substrates (thickness 100μm).

〔1.阻燃性評估〕 〔1. Fire resistance evaluation〕

依據UL94的VTM燃燒試驗方法進行試驗,並進行阻燃性的判定。以200℃×60分、10kgf使所得之毫米波基板用接著膜加熱硬化,從支撐物剝離後,裁切為長度200±5mm×寬度50±1mm的大小,作成試驗片。將試驗片的50mm之邊設為底邊,並在從底邊算起125mm的位置處沿著寬以筆畫出標記線,將棒體(棒體的直徑:12.7±0.5mm)抵在試驗片的長度方向來捲繞試驗片,並在比標記線更上方的部分貼附壓敏膠帶之後,將棒體抽出,將呈筒狀的試驗片的上端以不產生煙囪效應的方式用壓敏膠帶予以封閉。將此試驗片的上端用設在立架上的夾具加以夾固,將試驗片保持垂直。將內徑:9.5±0.3mm(0.374±0.012吋)的本生燈點火,並以使火燄成為無黃色的藍燄且高度成為19mm:(3/4吋)的方式調整火燄。以筒狀試驗片的下端中央部與燈的開口之間隔成為9.5mm(3/8吋)的方式架設該火燄,並進行第一次的接焰3±0.5秒後取開,測定試驗片的燃燒時間(亦包含火 種時間)。火熄滅後立刻進行第二次的接焰3±0.5秒,之後取開,並測定燃燒時間(亦包含火種時間)。對於各實施例、比較例分別以5個試驗片進行試驗,並將滿足以下所示VTM-0的判定條件者判斷為與VTM-0相當而設為合格,結果的標記是將與VTM-0相當者設為「○」,不相當於VTM-0者設為「×」。 Test according to UL94 VTM burning test method, and judge the flame retardancy. The resulting adhesive film for millimeter-wave substrates was heated and cured at 200°C×60 minutes and 10 kgf, peeled from the support, and cut into a size of 200±5 mm in length×50±1 mm in width to prepare a test piece. Set the 50mm side of the test piece as the bottom edge, and draw a marker line along the width at a position 125mm from the bottom edge with a pen, and press the rod (rod diameter: 12.7±0.5mm) against the test piece Wrap the test piece in the length direction of the test piece, and after attaching the pressure-sensitive tape to the part above the marking line, pull out the rod, and use the pressure-sensitive tape on the upper end of the tube-shaped test piece in a way that does not produce a chimney effect Be closed. The upper end of the test piece is clamped with a clamp set on the stand, and the test piece is kept vertical. Ignite a Bunsen burner with an inner diameter of 9.5±0.3mm (0.374±0.012 inches), and adjust the flame so that the flame becomes a yellow-free blue flame and the height becomes 19mm: (3/4 inch). The flame is set up so that the distance between the center of the lower end of the cylindrical test piece and the opening of the lamp becomes 9.5mm (3/8 inch), and the flame is connected for the first time for 3±0.5 seconds. Burning time (including fire Kind of time). Immediately after the fire is extinguished, carry out the second flame connection for 3±0.5 seconds, then remove it, and measure the burning time (including the fire time). For each of the Examples and Comparative Examples, the test was performed with 5 test pieces, and those satisfying the judgment conditions of VTM-0 as shown below were judged to be equivalent to VTM-0 and regarded as pass. The result was marked with VTM-0. The equivalent is set to "○" and the one that is not equivalent to VTM-0 is set to "×".

〈VTM-0的判定條件〉 <VTM-0 Judgment Conditions>

(1)各試驗片的第一次離燄或第二次離燄後的燃燒時間為10秒以下。 (1) The burning time after the first flame release or the second flame release of each test piece is 10 seconds or less.

(2)5個試驗片的第一次燃燒時間與第二次燃燒時間的合計為50秒以下。 (2) The total of the first burning time and the second burning time of the five test pieces is 50 seconds or less.

(3)第二次離燄後的燃燒時間的合計為30秒以下。 (3) The total burning time after the second flame release is 30 seconds or less.

(4)燃燒未達標記線。 (4) The combustion does not reach the mark line.

(5)沒有燃燒時的落下物所致之脫脂棉(設置在試驗片的下方)的著火。 (5) There is no ignition of absorbent cotton (installed under the test piece) caused by falling objects during burning.

※但是因為在燃燒時並無落下物,故沒有著眼於脫脂棉的著火。 ※However, because there is no falling material during burning, it does not focus on the fire of absorbent cotton.

〔2.比介電率(ε)、介電損耗正切(tan δ)的評估〕 [2. Evaluation of specific permittivity (ε) and dielectric loss tangent (tan δ)]

將毫米波基板用接著膜從支撐物剝離後,以厚度成為約1mm的方式進行積層,以200℃×60分、10kgf使之加熱硬化後,以成為寬度:約1mm、長度:約20mm的方式進行裁切,作成棒狀的試驗片。測定該試驗片的尺寸,在精密恆溫槽中,藉由空腔共振器測定在10GHz之於25℃的比介電率(ε)以及介電損耗正切(tan δ)。較佳係比介電率為3.5以下、介電損耗正切為0.003以下。 After peeling the adhesive film for the millimeter wave substrate from the support, laminate it so that the thickness becomes about 1mm, and heat and harden it at 200°C×60 minutes, 10kgf, so that the width: about 1mm, the length: about 20mm Cut to make a rod-shaped test piece. The size of the test piece was measured, and the specific permittivity (ε) and the dielectric loss tangent (tan δ) at 25°C at 10 GHz were measured with a cavity resonator in a precision thermostat. Preferably, the specific permittivity is 3.5 or less, and the dielectric loss tangent is 0.003 or less.

〔3.比介電率(ε)、介電損耗正切(tan δ)的溫度依賴性(溫度特性)評估〕 [3. Evaluation of temperature dependence (temperature characteristics) of specific permittivity (ε) and dielectric loss tangent (tan δ)]

在已加溫至120℃的精密恆溫槽內,使用空腔共振器,測定〔2.比介電率(ε)、介電損耗正切(tan δ)的評估〕所製作的試驗片在10GHz之於120℃的比介電率(ε)以及介電損耗正切(tan δ)。從該值求得相對於25℃的測定值之變化率%。變化率係以在±30%以下為較佳。 In a precision constant temperature bath heated to 120°C, using a cavity resonator, measure [2. Evaluation of specific permittivity (ε) and dielectric loss tangent (tan δ)] at 10 GHz Specific permittivity (ε) and dielectric loss tangent (tan δ) at 120°C. From this value, the percentage of change relative to the measured value at 25°C was obtained. The rate of change is preferably ±30% or less.

〔4.剝離強度的評估〕 [4. Evaluation of peel strength]

將銅箔(CF-T9FZSV,福田金屬箔粉工業股份有限公司製,厚度:18μm)以粗化面為內側的方式貼合在毫米波基板用接著膜的兩面,以壓軋機用200℃×60分、30kgf的條件加壓使之硬化。將該試驗片以10mm寬度裁切,並以精密萬能試驗機(Autograph)從銅箔之界面揭起剝離,測定180°的剝離強度(依據JISK6854-2)。以n=5的平均值作為測定值。剝離強度係以4.5(單位:(N/cm))以上為較佳。 Copper foil (CF-T9FZSV, manufactured by Futian Metal Foil & Powder Industry Co., Ltd., thickness: 18μm) is bonded to both sides of the adhesive film for millimeter wave substrates with the roughened surface as the inner side, using a rolling mill at 200℃×60 It is hardened by applying pressure at 30kgf. The test piece was cut to a width of 10 mm, and peeled off from the interface of the copper foil with a precision universal testing machine (Autograph), and the peel strength of 180° was measured (according to JISK6854-2). Take the average value of n=5 as the measured value. The peel strength is preferably 4.5 (unit: (N/cm)) or more.

〔5.焊料耐熱性的評估〕 [5. Evaluation of solder heat resistance]

將與〔4.剝離強度的評估〕相同地張貼有銅箔並已使其硬化者以30×30mm裁切,作成試驗片。將之載置於已加熱至260℃之焊料浴的表面60秒,目視觀察有無產生膨脹突起。以n=3進行試驗,並將未產生膨脹突起者設為「○」,產生膨脹突起者設為「×」。 The copper foil was affixed and cured in the same manner as in [4. Evaluation of Peeling Strength] and cut to 30×30 mm to prepare test pieces. This was placed on the surface of a solder bath heated to 260°C for 60 seconds, and the presence of swelling protrusions was visually observed. The test was carried out with n=3, and those without swelling protrusions were set as "○", and those with swelling protrusions were set as "×".

Figure 108144101-A0202-12-0021-14
Figure 108144101-A0202-12-0021-14

Figure 108144101-A0202-12-0022-15
Figure 108144101-A0202-12-0022-15

Figure 108144101-A0202-12-0023-16
Figure 108144101-A0202-12-0023-16

表1至表3係顯示實施例/比較例的調配與評估結果。於表1至表3中,填料比率係相對於排除甲苯的全部成分之二氧化矽填料的體積比例(Vol%),係將二氧化矽填料的比重設為2.2,其它成分的比重設為1.0而算出者。此外,彈性體比率係相對於(A)成分與(B)成分的合計100質量份之(A)成分的質量比例(%)。以實施例1作為基準的調配。實施例1係將相對於(A)成分與(B)成分的合計100質量份之(A)成分:(B)成分的比率設為65:35,並將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為30質量份,且以二氧化矽填料的調配比率成為50vol%(體積%)的方式設為227質量份,並使用KBE-846(硫醚系)作為矽烷偶合劑者。實施例2係於實施例1的配方中去掉二氧化矽填料者。實施例3係將相 對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為20質量份,並將(B)成分的一部分置換為聯苯基骨架環氧樹脂者。(A)成分:(B)成分的比率為60:(35:5)。實施例4係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為50質量份者。實施例5係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量為設為15質量份者。實施例6係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量為20質量份,且將(A)成分:(B)成分的比率設為80:20者。實施例7係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為20質量份,並將(A)成分:(B)成分的比率設為55:45者。實施例8係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為20質量份,並將屬於其它成分之矽烷偶合劑變更為KBM-573(胺基系)者。實施例9係併用兩種(C)阻燃劑者。更詳細而言,係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之(C)成分的調配量設為45質量份,並將膦酸金屬鹽5質量份與其它阻燃劑(HCA-HQ-HS)40質量份予以組合之實施例。 Tables 1 to 3 show the preparation and evaluation results of the examples/comparative examples. In Tables 1 to 3, the filler ratio is relative to the volume ratio (Vol%) of the silica filler excluding all components of toluene, the specific gravity of the silica filler is set to 2.2, and the specific gravity of other components is set to 1.0 And the figure out. In addition, the elastomer ratio is the mass ratio (%) of the (A) component with respect to 100 parts by mass of the total of the (A) component and the (B) component. The formulation was based on Example 1. In Example 1, the ratio of the (A) component: (B) component relative to the total 100 parts by mass of the (A) component and the (B) component was 65:35, and compared with the (A) component, (B) The blending amount of the (C) component of 100 parts by mass of the total of the component and the (C) component is set to 30 parts by mass, and the blending ratio of the silica filler is set to 227 parts by mass so that the blending ratio of the silica filler becomes 50 vol% (vol%), And use KBE-846 (thioether series) as silane coupling agent. Example 2 is based on the formula of Example 1 without the silica filler. Example 3 will phase The blending amount of (C) component for the total of 100 parts by mass of (A) component, (B) component and (C) component is set to 20 parts by mass, and part of (B) component is replaced with biphenyl skeleton epoxy Resin. (A) Component: The ratio of (B) component is 60:(35:5). In Example 4, the blending amount of the (C) component with respect to the total of 100 parts by mass of the (A) component, (B) component, and (C) component was 50 parts by mass. In Example 5, the compounding amount of the (C) component with respect to the total of 100 parts by mass of the (A) component, (B) component, and (C) component was 15 parts by mass. In Example 6, the blending amount of the (C) component with respect to the total 100 parts by mass of the (A) component, (B) component and (C) component was 20 parts by mass, and the (A) component: (B) component The ratio is set to 80:20. In Example 7, the compounding amount of the (C) component with respect to the total of 100 parts by mass of the (A) component, (B) component and (C) component was 20 parts by mass, and the (A) component: (B) The ratio of ingredients is set to 55:45. In Example 8, the blending amount of the (C) component with respect to the total of 100 parts by mass of the (A) component, (B) component and (C) component was set to 20 parts by mass, and the silane coupling agent belonging to other components was changed It is KBM-573 (amine-based). Example 9 is a combination of two (C) flame retardants. In more detail, the blending amount of (C) component relative to the total of (A) component, (B) component and (C) component 100 parts by mass is 45 parts by mass, and 5 mass parts of phosphonic acid metal salt An example in which parts are combined with 40 parts by mass of another flame retardant (HCA-HQ-HS).

從表1可知,實施例1至9的阻燃性全部都相當於VTM-0,而且ε與ε的溫度依賴性低,tan δ與tan δ的溫度依賴性亦小,剝離強度高,焊料耐熱性高,結果係為良好。 It can be seen from Table 1 that the flame retardancy of Examples 1 to 9 are all equivalent to VTM-0, and the temperature dependence of ε and ε is low, the temperature dependence of tan δ and tan δ is also small, the peel strength is high, and the solder heat resistance The performance is high, and the result is good.

從表2可知,比較例1至7係將實施例1的(C)成分置換成相同含量的其它磷系阻燃劑((C’)成分)者。就阻燃性而言,比較例1至7全部都無法達成VTM-0,而較實施例1差。惟使用PX-202之比較例2與使用HCA-HQ-HS之比較例6的tan δ在25℃的值小,而且,溫度特性亦良好(溫度依 賴性小)。但是,比較例1、比較例3、比較例4、比較例5、比較例7的溫度特性非常差(溫度依賴性大),再者,比較例3、比較例4、比較例5的tan δ在25℃的值係超過0.003,屬於無法使用在毫米波基板用途的程度。此外,比較例4、比較例7的剝離強度低。 As can be seen from Table 2, Comparative Examples 1 to 7 are those in which the component (C) of Example 1 is replaced with another phosphorus-based flame retardant ((C') component) of the same content. In terms of flame retardancy, all of Comparative Examples 1 to 7 could not achieve VTM-0, which was inferior to Example 1. However, the tan δ of Comparative Example 2 using PX-202 and Comparative Example 6 using HCA-HQ-HS is small at 25°C, and the temperature characteristics are also good (temperature dependent Little reliance). However, the temperature characteristics of Comparative Example 1, Comparative Example 3, Comparative Example 4, Comparative Example 5, and Comparative Example 7 are very poor (large temperature dependence). Furthermore, the tan δ of Comparative Example 3, Comparative Example 4, and Comparative Example 5 The value at 25°C exceeds 0.003, which means it cannot be used for millimeter wave substrate applications. In addition, the peel strength of Comparative Example 4 and Comparative Example 7 was low.

如從表3可知,比較例8係將實施例1之(A)成分置換為非氫化苯乙烯系彈性體((A’)成分)者,tan δ的溫度特性差(溫度依賴性大)。比較例9係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之實施例1的(C)成分的調配量設為55質量份者,焊料耐熱性相較於實施例1為較差,剝離強度亦較低。比較例10係將相對於(A)成分、(B)成分與(C)成分之合計100質量份之實施例1的(C)成分的調配量設為10質量份者,阻燃性未能達成VTM-0。比較例11係從實施例1除去了(C)成分,且未調配阻燃劑者,阻燃性未能達成VTM-0。另一方面,溫度特性係為良好(溫度依賴性小)。 As can be seen from Table 3, in Comparative Example 8, when the component (A) of Example 1 was replaced with a non-hydrogenated styrene elastomer (component (A')), the temperature characteristic of tan δ was poor (large temperature dependence). Comparative Example 9 is based on the blending amount of the component (C) of Example 1 at 55 parts by mass relative to the total of the components (A), (B) and (C) 100 parts by mass, and the solder heat resistance is compared It is worse in Example 1, and the peel strength is also lower. In Comparative Example 10, when the blending amount of the component (C) of Example 1 is 10 parts by mass relative to the total of 100 parts by mass of the (A) component, (B) component and (C) component, the flame retardancy is not good Achieve VTM-0. In Comparative Example 11, the component (C) was removed from Example 1, and the flame retardant was not blended, and the flame retardancy failed to achieve VTM-0. On the other hand, the temperature characteristics are good (the temperature dependence is small).

如上所述,本發明之毫米波基板用樹脂組成物係樹脂組成物之硬化物的高頻特性優異,tan δ的溫度依賴性小,而且阻燃性優異,能夠使用作為毫米波雷達用的絶緣體,在高可靠性的毫米波基板、毫米波雷達基板、半導體裝置的製造上非常地有用。 As described above, the resin composition for millimeter wave substrates of the present invention has excellent high-frequency characteristics of the cured resin composition, small temperature dependence of tan δ, and excellent flame retardancy, and can be used as an insulation for millimeter wave radars. The body is very useful in the manufacture of highly reliable millimeter wave substrates, millimeter wave radar substrates, and semiconductor devices.

Claims (9)

一種毫米波基板用樹脂組成物,係包含:(A)氫化苯乙烯系彈性體、(B)具有聯苯基骨架之可交聯的化合物、以及(C)含有膦酸金屬鹽之阻燃劑; A resin composition for millimeter wave substrates, comprising: (A) hydrogenated styrene elastomer, (B) crosslinkable compound with biphenyl skeleton, and (C) flame retardant containing phosphonic acid metal salt ; 其中,相對於(A)成分、(B)成分與(C)成分之合計100質量份,(C)成分為15質量份至50質量份; Wherein, the (C) component is 15 to 50 parts by mass relative to 100 parts by mass of the total of (A) component, (B) component and (C) component; 硬化物在10GHz下之介電損耗正切係在120℃的值相對於在25℃的值之變化率為30%以下。 The change rate of the dielectric loss tangent of the hardened material at 10GHz at 120°C to the value at 25°C is 30% or less. 如申請專利範圍第1項所述之毫米波基板用樹脂組成物,其中,(C)成分的膦酸金屬鹽為5質量份以上。 The resin composition for millimeter-wave substrates as described in claim 1, wherein the phosphonic acid metal salt of the component (C) is 5 parts by mass or more. 如申請專利範圍第1或2項所述之毫米波基板用樹脂組成物,其中,在10GHz之介電損耗正切為0.0030以下。 The resin composition for millimeter wave substrates as described in item 1 or 2 of the scope of patent application, wherein the dielectric loss tangent at 10 GHz is 0.0030 or less. 如申請專利範圍第1至3項中任一項所述之毫米波基板用樹脂組成物,其中,相對於(A)成分與(B)成分之合計100質量份,(A)成分為50至80質量份。 The resin composition for millimeter wave substrates according to any one of the claims 1 to 3, wherein the (A) component is 50 to 100 parts by mass of the total of the (A) component and (B) component 80 parts by mass. 如申請專利範圍第1至4項中任一項所述之毫米波基板用樹脂組成物,其中,(A)成分為苯乙烯-乙烯/丁烯-苯乙烯嵌段共聚物。 The resin composition for a millimeter wave substrate according to any one of the claims 1 to 4, wherein the component (A) is a styrene-ethylene/butylene-styrene block copolymer. 一種毫米波基板用接著膜,係含有申請專利範圍第1至5項中任一項所述之毫米波基板用樹脂組成物。 An adhesive film for millimeter wave substrates contains the resin composition for millimeter wave substrates described in any one of items 1 to 5 in the scope of patent application. 一種毫米波基板,係含有申請專利範圍第1至5項中任一項所述之毫米波基板用樹脂組成物之硬化物。 A millimeter wave substrate is a cured product containing the resin composition for millimeter wave substrates described in any one of the first to fifth patent applications. 一種毫米波雷達基板,係含有申請專利範圍第1至5項中任一項所述之毫米波基板用樹脂組成物之硬化物。 A millimeter-wave radar substrate is a cured product containing the resin composition for millimeter-wave substrates described in any one of items 1 to 5 in the scope of patent application. 一種半導體裝置,係含有申請專利範圍第7項所述之毫米波基板或申請專利範圍第8項所述之毫米波雷達基板。 A semiconductor device containing the millimeter wave substrate described in the 7th patent application or the millimeter wave radar substrate described in the 8 patent application.
TW108144101A 2018-12-04 2019-12-03 Resin composition for millimeter wave substrate, adhesive film for millimeter wave substrate, millimeter wave substrate, millimeter wave radar substrate, and semiconductor device TWI814956B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018227030 2018-12-04
JP2018-227030 2018-12-04

Publications (2)

Publication Number Publication Date
TW202030254A true TW202030254A (en) 2020-08-16
TWI814956B TWI814956B (en) 2023-09-11

Family

ID=70974276

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108144101A TWI814956B (en) 2018-12-04 2019-12-03 Resin composition for millimeter wave substrate, adhesive film for millimeter wave substrate, millimeter wave substrate, millimeter wave radar substrate, and semiconductor device

Country Status (4)

Country Link
JP (2) JP7364243B2 (en)
KR (1) KR20210098990A (en)
TW (1) TWI814956B (en)
WO (1) WO2020116408A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020117651A (en) * 2019-01-28 2020-08-06 Mcppイノベーション合同会社 Millimeter wave module and its component part
KR20230152659A (en) * 2021-02-22 2023-11-03 가부시끼가이샤 레조낙 Resin composition, cured product, laminate, transparent antenna and manufacturing method thereof, and image display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003266671A1 (en) 2002-09-30 2004-04-19 Hitachi Chemical Co., Ltd. Resin composition for printed wiring board, and vanish, prepreg and metal-clad laminate using same
TWI404744B (en) * 2006-08-08 2013-08-11 Namics Corp Thermosetting resin composition and uncured film composed of the resin composition
JP5955156B2 (en) 2012-08-10 2016-07-20 ナミックス株式会社 Resin composition, and adhesive film and coverlay film thereby
JP2014168045A (en) 2013-01-31 2014-09-11 Nitto Denko Corp Method for producing module substrate and electronic device
WO2018097010A1 (en) 2016-11-24 2018-05-31 ナミックス株式会社 Resin composition, thermosetting film using same, resin cured product, laminate, printed wiring board and semiconductor device
JP6854505B2 (en) * 2016-11-30 2021-04-07 ナミックス株式会社 Resin composition, thermosetting film using it

Also Published As

Publication number Publication date
JP2023178317A (en) 2023-12-14
JP7364243B2 (en) 2023-10-18
KR20210098990A (en) 2021-08-11
WO2020116408A1 (en) 2020-06-11
JPWO2020116408A1 (en) 2021-10-21
TWI814956B (en) 2023-09-11

Similar Documents

Publication Publication Date Title
JP2023178317A (en) Resin composition, adhesive film, millimeter wave substrate, millimeter wave radar substrate, printed wiring board and semiconductor device
TWI577729B (en) Epoxy resin composition, adhesive film and cover lay film thereof
US9872382B2 (en) Low dielectric composite material and laminate and printed circuit board thereof
JP6854505B2 (en) Resin composition, thermosetting film using it
KR20210068424A (en) Resin composition, film with substrate, metal/resin laminate, and semiconductor device
TWI299352B (en)
CN105440645A (en) Phosphorus-containing flame retardant low-dielectric resin composition and preparation method and application thereof
TW201731937A (en) Resin composition and uses of the same
TWI731901B (en) Thermosetting resin composition, thermosetting resin film, printed wiring board, and semiconductor device
JP2016041802A (en) Phosphorus-containing phenol resin compound, and phosphorus-containing flame-retardant epoxy resin cured product prepared using the same as raw material
JP2016147945A (en) Resin composition, insulation film and semiconductor device
TWI781304B (en) Resin compositions, varnishes, laminates, and printed wiring boards
CN102690495B (en) Hot-melting type halogen-free fire-retardant heat conducting and dielectric insulating layer resin and application thereof
TW202136379A (en) Resin composition, resin layer-provided support, prepreg, laminate sheet, multilayer printed wiring board, and printed wiring board for millimeter-wave radar
TWI818994B (en) Thermosetting resin compositions, films containing the same, and multilayer wiring boards using the same
JP7264485B2 (en) Thermosetting resin composition, insulating film, interlayer insulating film, multilayer wiring board, and semiconductor device
KR101945088B1 (en) Varnishes and prepregs and laminates made therefrom
JPH04142360A (en) Flame-retardant resin composition
KR102657819B1 (en) Thermosetting resin composition, insulating film, interlayer insulating film, multilayer wiring board, and semiconductor device
CN113121793B (en) Halogen-free thermosetting resin composition, and prepreg, laminated board and printed circuit board using same
JP2021054889A (en) Modified hydrogenated polyolefin, resin composition, insulating film, semiconductor device, and method for producing modified hydrogenated polyolefin
WO2024038845A1 (en) Resin composition
WO2023188507A1 (en) Adhesive composition
CN114685929A (en) Thermosetting resin composition and application thereof