TW202028497A - Magnetic target material with different magnetic strength distribution - Google Patents
Magnetic target material with different magnetic strength distribution Download PDFInfo
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Abstract
Description
本發明係關於一種磁性靶材,尤指一種具異磁性强度分布的磁性靶材。The present invention relates to a magnetic target material, especially a magnetic target material with different magnetic intensity distribution.
按,在現行的磁控濺鍍系統(magnetron sputtering system)中,主要是在濺鍍靶的靶背加裝永久磁鐵組,令永久磁鐵組所產生的磁力線朝上穿越濺鍍靶,進而在濺鍍靶的靶面上形成運作所需的封閉磁力線,促使電子運動軌跡沿磁力線方向以螺旋狀路徑迴旋前進,藉以增加電子與氬氣分子碰撞的機率,達到提升靶材利用率與鍍膜速率之目的。According to the current magnetron sputtering system (magnetron sputtering system), a permanent magnet group is mainly installed on the back of the sputtering target, so that the magnetic field lines generated by the permanent magnet group cross the sputtering target upward, and then the sputtering target The closed magnetic lines of force required for operation are formed on the target surface of the plating target, which promotes the movement of the electrons along the direction of the magnetic line to move forward in a circling direction, so as to increase the collision mechanism between electrons and argon molecules, so as to achieve the purpose of increasing the utilization rate of the target material and the coating rate .
然而,在實際轟擊濺鍍靶時,濺鍍靶被轟擊不會均勻的減少,尤其是濺鍍靶的短邊外側位置,其轟擊的消耗率為最高,據此濺鍍靶在轟擊速率不均的條件下,進而造成濺鍍靶被轟擊速率不均的現象,而導致靶材替換時,仍有相對大的部分未使用,因而產生濺鍍靶浪費的問題。However, in the actual bombardment of the sputtering target, the bombardment of the sputtering target will not be uniformly reduced, especially the short side outer position of the sputtering target, the bombardment consumption rate is the highest, according to which the sputtering target has uneven bombardment rate Under these conditions, the uneven bombardment rate of the sputtering target will be caused, and a relatively large part of the target material is still unused when the target is replaced, thus causing the problem of wasting the sputtering target.
本發明之主要目的在於解決習知濺鍍靶之轟擊速率不均,因而造成濺鍍靶厚度使用不均,降低濺鍍靶的使用壽命的問題。The main purpose of the present invention is to solve the problem of uneven bombardment rate of the conventional sputtering target, resulting in uneven use of the thickness of the sputtering target and reducing the service life of the sputtering target.
為了解決上述課題,本發明提供一種具異磁性强度分布的磁性靶材,其包含一基板、一靶材模組及一磁性模組。基板具有一第一面以及相反於第一面之一第二面;靶材模組設於基板之第一面,靶材模組包含一環狀之內環靶材、一設於內環靶材內側之內側靶材,以及一環設於內環靶材外側之外環靶材,外環靶材具有兩相對之平直段以及兩分別連接兩平直段兩端的連接段;磁性模組,其設於基板之第二面,磁性模組包含一第一磁性單元對應設於內側靶材位置、一第二磁性單元對應設於兩平直段位置,以及一第三磁性單元對應設於兩連接段,其中,第一磁性單元的磁性強度大於第二磁性單元的磁性強度,第二磁性單元的磁性強度大於第三磁性單元的磁性強度。In order to solve the above-mentioned problems, the present invention provides a magnetic target with a different magnetic intensity distribution, which includes a substrate, a target module, and a magnetic module. The substrate has a first surface and a second surface opposite to the first surface; the target module is set on the first surface of the substrate, and the target module includes a ring-shaped inner ring target and a target set on the inner ring The inner target material on the inner side of the material, and a ring set on the outer ring target material on the outer side of the inner ring target material. The outer ring target material has two opposite straight sections and two connecting sections respectively connecting the two straight sections; the magnetic module, It is arranged on the second surface of the substrate, and the magnetic module includes a first magnetic unit corresponding to the inner target position, a second magnetic unit corresponding to the two straight section positions, and a third magnetic unit corresponding to the two The connecting section, wherein the magnetic strength of the first magnetic unit is greater than the magnetic strength of the second magnetic unit, and the magnetic strength of the second magnetic unit is greater than the magnetic strength of the third magnetic unit.
藉此,本發明經由裝設不同磁性強度的第一磁性單元、第二磁性單元及第三磁性單元,以降低對應外環靶材之兩連接段的磁性強度,且同時提升對應內側靶材的磁性強度,以平衡靶材模組的離子轟擊速率,達到靶材模組轟擊厚度平均之效果,以延長靶材模組的使用壽命之目的。Therefore, the present invention reduces the magnetic strength of the two connecting sections corresponding to the outer ring target by installing the first magnetic unit, the second magnetic unit, and the third magnetic unit with different magnetic strengths, and at the same time improves the corresponding inner target The magnetic strength is used to balance the ion bombardment rate of the target module to achieve the average bombardment thickness of the target module, so as to extend the service life of the target module.
為便於說明本發明於上述發明內容一欄中所表示的中心思想,茲以具體實施例表達。實施例中各種不同物件係按適於列舉說明之比例,而非按實際元件的比例予以繪製,合先敘明。In order to facilitate the description of the central idea of the present invention expressed in the column of the above-mentioned summary of the invention, specific embodiments are used to express it. The various objects in the embodiments are drawn in proportions suitable for enumeration and description, rather than the proportions of actual components, and are described first.
請參閱圖1至圖6所示,本發明提供一種具異磁性强度分布的磁性靶材,其包含一基板10、一靶材模組20及一磁性模組30。Please refer to FIGS. 1 to 6, the present invention provides a magnetic target with a different magnetic intensity distribution, which includes a
基板10,其為非磁性材料,基板10具有一第一面11以及相反於第一面11之一第二面12。The
靶材模組20,其設於基板10之第一面11上,,靶材模組20包含一環狀之內環靶材21、一設於內環靶材21內側之內側靶材22,以及一環設於內環靶材21外側之外環靶材23,內側靶材22概為長矩形狀,內側靶材22具有一長邊方向221及垂直於長邊方向221之一短邊方向222,外環靶材23係由兩平直段231及兩連接段232所組成,於本實施例中,兩平直段231彼此相對設置,並分別沿著內側靶材22之長邊方向221而設,而兩連接段232分別連接於兩平直段231兩端,並分別沿著內側靶材22兩側之短邊方向222而設,各平直段231之長度分別大於各連接段232之長度,進一步來說,各連接段232係由一平直部232a及兩延伸部232b所組成,各延伸部232b之一端弧形連接於各平直部232a,而另一端弧形連接於各平直段231。The
磁性模組30,其設於基板10之第二面12,磁性模組30包含有一第一磁性單元31對應設於內側靶材22位置、一第二磁性單元32對應設於兩平直段231位置,以及一第三磁性單元33對應設於兩連接段232,以使第二磁性單元32與第三磁性單元33環設在第一磁性單元31的周圍,其中,第一磁性單元31、第二磁性單元32及第三磁性單元33彼此間磁性強度互不相同,於本實施例中,第一磁性單元31的磁性強度大於第二磁性單元32的磁性強度,第二磁性單元32的磁性強度大於第三磁性單元33的磁性強度,而且,第一磁性單元31與第二磁性單元32相鄰於基板10之同一端磁極呈異極設置,第二磁性單元32與第三磁性單元33相鄰於基板10之同一端磁極呈同極設置;請配合圖3至圖6所示,於本實施例中,第一磁性單元31之S極相鄰於基板10,而N極則是遠離基板10,相反地,第二磁性單元32及第三磁性單元33之N極相鄰於基板10,而S極則是遠離基板10,藉以磁性模組30的磁場會由第二磁性單元32及第三磁性單元33與第一磁性單元31之相異極性形成封閉磁力線。The
進一步來說,請配合圖3所示,第一磁性單元31為複數個圓形磁件,其中,第一磁性單元31具有複數第一磁件311及複數第二磁件312,各第一磁件311的直徑大於各第二磁件312的直徑,於本實施例中,各第一磁件311對應沿著內側靶材22的長邊方向221並排設置,各第二磁件312對應沿著內側靶材22兩側的短邊方向222弧形設置;第二磁性單元32為複數個圓形磁件,第二磁性單元32之圓形磁件對應沿著各平直段231排列,且彼此呈間隔設置,第三磁性單元33為複數個圓形磁件,第三磁性單元33之圓形磁件對應沿著各平直部232a及各延伸部232b排列,其中,第三磁性單元33相鄰於第一磁性單元31之第二磁件312,且第二磁件312對應於第三磁性單元33呈弧形排列,而各連接段232與各平直段231交界的第二磁性單元32及第三磁性單元33互不接觸;藉此,本發明藉由第三磁性單元33降低對應外環靶材23之兩連接段232的磁性強度,並透過第一磁性單元31相對提升對應內側靶材22的磁性強度,以平衡靶材模組20的離子轟擊速率,達到靶材模組20轟擊厚度平均之效果。Furthermore, please cooperate with FIG. 3, the first
值得說明的是,請配合圖3及圖4所示,本發明可依據濺鍍需求而適當地調整第二磁性單元32及第三磁性單元33的設置數量及範圍;舉例來說,請配合圖3所示,於本發明實施例中,第二磁性單元32的排列範圍略等於第一磁性單元31的排列範圍,而第三磁性單元33則縱向排列於平直部232a且弧形排列於兩延伸部232b的位置,使得第三磁性單元33的排列範圍位於第一磁性單元31的兩側,以降低對應連接段232的磁性強度;請配合圖4所示,於本發明又一實施例中,可適當地減少第二磁性單元32的設置數量,以相對縮短第二磁性單元32的排列範圍,進而增加第三磁性單元33設置數量,使得各連接段232所界定的延伸部232b範圍往兩平直段231方向延伸,藉以增進第三磁性單元33排列範圍,達到調整平衡靶材模組20的轟擊速率之目的。It is worth noting that, please cooperate with the figures shown in FIG. 3 and FIG. 4. The present invention can appropriately adjust the number and range of the second
特別說明的是,請配合參閱圖5及圖6所示,第一磁性單元31與第二磁性單元32及第三磁性單元33之磁力線會藉由內環靶材21與外環靶材23的間隙導引,其中,外環靶材23具有一內側邊233,內側邊233鄰接於基板10之第一面11且環繞內環靶材21,而第二磁性單元32與第三磁性單元33的邊緣係縱向對齊於內側邊233,因此第二磁性單元32與第三磁性單元33能夠有效讓磁力線有效地通過內環靶材21與外環靶材23的間隙,避免磁力耗損之狀況。In particular, please refer to FIGS. 5 and 6, the magnetic field lines of the first
藉此,本發明具有以下優點:Therefore, the present invention has the following advantages:
1.本發明在基板10上裝設不同磁性強度的第一磁性單元31、第二磁性單元32及第三磁性單元33,以降低對應外環靶材23之兩連接段232的磁性強度,並相對提升對應內側靶材22的磁性強度,以平衡靶材模組20的離子轟擊速率,達到靶材模組20轟擊厚度平均之效果,以延長靶材模組20的使用壽命之目的。1. In the present invention, a first
2.藉由第二磁性單元32與第三磁性單元33縱向切齊內側邊233,能夠有效讓磁力線有效地通過內環靶材21與外環靶材23的間隙,避免磁力耗損之狀況。2. With the second
3.本發明可依據濺鍍需求而適當地調整第二磁性單元32及第三磁性單元33的設置數量及範圍,達到調整平衡靶材模組20的轟擊速率之目的。3. The present invention can appropriately adjust the number and range of the second
以上所舉實施例僅用以說明本發明而已,非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化,俱屬本發明意欲保護之範疇。The above-mentioned embodiments are only used to illustrate the present invention, and are not used to limit the scope of the present invention. All modifications or changes made without violating the spirit of the present invention belong to the scope of the present invention.
10:基板
232:連接段
11:第一面
232a:平直部
12:第二面
232b:延伸部
20:靶材模組
233:內側邊
21:內環靶材
30:磁性模組
22:內側靶材
31:第一磁性單元
221:長邊方向
311:第一磁件
222:短邊方向
312:第二磁件
23:外環靶材
32:第二磁性單元
231:平直段
33:第三磁性單元
10: substrate
232: connection segment
11:
圖1係為本發明之立體示意圖。 圖2係為本發明之另一視角立體示意圖。 圖3係為本發明之仰視圖。 圖4係為本發明又一實施例之仰視圖。 圖5係圖3沿5-5剖面線之剖面示意圖。 圖6係圖3沿6-6剖面線之剖面示意圖。Figure 1 is a three-dimensional schematic diagram of the present invention. Fig. 2 is a three-dimensional schematic diagram of the present invention from another perspective. Figure 3 is a bottom view of the present invention. Figure 4 is a bottom view of another embodiment of the present invention. Figure 5 is a schematic cross-sectional view of Figure 3 along the line 5-5. Figure 6 is a schematic cross-sectional view of Figure 3 along the line 6-6.
10:基板 10: substrate
12:第二面 12: Second side
20:靶材模組 20: Target module
22:內側靶材 22: Inside target
221:長邊方向 221: Long side direction
222:短邊方向 222: Short side direction
23:外環靶材 23: Outer ring target
231:平直段 231: straight section
232:連接段 232: connection segment
232a:平直部 232a: straight part
232b:延伸部 232b: Extension
233:內側邊 233: inner side
30:磁性模組 30: Magnetic module
31:第一磁性單元 31: The first magnetic unit
311:第一磁件 311: The first magnet
312:第二磁件 312: The second magnet
32:第二磁性單元 32: The second magnetic unit
33:第三磁性單元 33: The third magnetic unit
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