TW202024225A - Epoxy resin composition for underfilling semiconductor device - Google Patents

Epoxy resin composition for underfilling semiconductor device Download PDF

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TW202024225A
TW202024225A TW108138700A TW108138700A TW202024225A TW 202024225 A TW202024225 A TW 202024225A TW 108138700 A TW108138700 A TW 108138700A TW 108138700 A TW108138700 A TW 108138700A TW 202024225 A TW202024225 A TW 202024225A
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epoxy resin
curing agent
underfilling
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resin composition
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TWI716165B (en
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李恩貞
李歡希
金大煥
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南韓商Kcc公司
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    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/188Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using encapsulated compounds
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/4007Curing agents not provided for by the groups C08G59/42 - C08G59/66
    • C08G59/4014Nitrogen containing compounds
    • C08G59/4021Ureas; Thioureas; Guanidines; Dicyandiamides
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    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50Amines
    • C08G59/56Amines together with other curing agents
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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  • Chemical & Material Sciences (AREA)
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  • Health & Medical Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present invention relates to an epoxy resin composition for underfilling a semiconductor device, the epoxy resin composition for underfilling the semiconductor device including: (A) a bisphenol epoxy resin; (B) a polyfunctional epoxy resin; (C) a CTBN modified epoxy resin; (D) a curing agent; and (E) a latent curing agent.

Description

半導體器件底部填充用環氧樹脂組合物Epoxy resin composition for underfilling semiconductor device

本發明是有關於一種環氧樹脂組合物,且特別是有關於一種半導體器件底部填充用環氧樹脂組合物。The present invention relates to an epoxy resin composition, and particularly relates to an epoxy resin composition for underfilling of semiconductor devices.

半導體封裝為以使半導體晶片能夠以電子部件進行工作的方式進行元件化的技術,向半導體器件提供需要的電力,連接半導體器件之間的信號,釋放在半導體器件中所發生的熱量,從自然、化學、熱環境變換保護半導體器件。最近,隨著電子部件和移動設備等急速向薄型化、高密度化、高功能化及超高速化發展,半導體封裝技術也逐漸向微細化、薄型化及高集中化等發展。Semiconductor packaging is a technology that enables semiconductor wafers to work as electronic components. It provides necessary power to semiconductor devices, connects signals between semiconductor devices, and releases heat generated in semiconductor devices. Chemical and thermal environment changes to protect semiconductor devices. Recently, as electronic components and mobile devices are rapidly becoming thinner, higher-density, higher-functional, and ultra-high-speed, semiconductor packaging technology is gradually becoming smaller, thinner, and more concentrated.

隨著半導體封裝技術的急速發展,一同需要可以實現這種技術的封裝材料的技術發展,作為其中的一個的底部填充劑(underfill)為用於封裝技術的成功的極為重要的要素中的一種。底部填充劑是指利用絕緣樹脂將球柵陣列(BGA,ball grid array)、晶片級封裝(CSP,chip scale package)、倒裝晶片等的元件底部完全封裝的工法。底部填充劑位於電路板與半導體器件(晶片)之間,用於對因半導體器件與電路基板之間的熱膨脹係數差異而發生的應力和變形進行再分配,並將濕氣或對其他模組引起的電、磁環境的影響最小化。With the rapid development of semiconductor packaging technology, there is also a need for technological development of packaging materials that can realize this technology. Underfill as one of them is one of the extremely important elements for the success of packaging technology. The underfill refers to a method of completely encapsulating the bottom of components such as ball grid array (BGA, ball grid array), chip scale package (CSP), and flip chip using insulating resin. The underfill is located between the circuit board and the semiconductor device (wafer), and is used to redistribute the stress and deformation caused by the difference in thermal expansion coefficient between the semiconductor device and the circuit substrate, and to cause moisture or other modules The impact of the electrical and magnetic environment is minimized.

在此情況下,在球柵陣列、晶片級封裝等的元件不良的情況下,發生從電路基板簡單去除球柵陣列、晶片級封裝等的組裝體來進行再次作業的情況。如上所述,可用於底部填充再次作業的半導體器件底部填充用組合物為環氧樹脂,為了再作業性而利用增塑劑。在韓國公開專利公報第2002-0036965號中揭示了利用環氧樹脂和增塑劑的半導體元件,但是,未提及有關再作業性的內容,且未呈現出在常溫條件下的固化特性。尤其,即使存在增塑劑的作用,也無法充分去除底部填充用環氧樹脂,且會發生殘留在基板等的再作業性並不良好的問題。並且,增塑劑的作用對底部填充鍍膜的耐熱性、耐衝擊性、耐濕性等產生不良的影響。In this case, in the case of defective elements such as the ball grid array and the wafer-level package, the assembly such as the ball grid array and the wafer-level package may be simply removed from the circuit board and reworked. As described above, the composition for underfilling of a semiconductor device that can be used for rework of underfilling is an epoxy resin, and a plasticizer is used for reworkability. Korean Laid-Open Patent Publication No. 2002-0036965 discloses a semiconductor element using epoxy resin and plasticizer. However, it does not mention reworkability and does not exhibit curing characteristics under normal temperature conditions. In particular, even if the plasticizer acts as a plasticizer, the epoxy resin for underfill cannot be sufficiently removed, and there is a problem that the reworkability remaining on the substrate or the like is not good. In addition, the action of the plasticizer adversely affects the heat resistance, impact resistance, and moisture resistance of the underfill coating.

因此,實質上需要再作業性卓越且具有高耐熱性、高耐衝擊性、高耐濕性的半導體器件底部封裝的技術。Therefore, a technology for bottom packaging of semiconductor devices that has excellent reworkability, high heat resistance, high impact resistance, and high humidity resistance is essentially required.

現有技術文獻Prior art literature

專利文獻Patent literature

專利文獻1:韓國公開專利公報第2002-0036965號Patent Document 1: Korean Published Patent Publication No. 2002-0036965

技術問題technical problem

本發明的目的在於,提供可以輕鬆拆除球柵陣列、晶片級封裝等的組裝體的再作業性優秀的半導體底部填充用環氧樹脂組合物。The object of the present invention is to provide an epoxy resin composition for semiconductor underfill that can easily remove assemblies such as ball grid arrays and wafer-level packages and has excellent reworkability.

解決問題的方案Solution to the problem

本發明提供半導體器件底部填充用環氧樹脂組合物,所述半導體器件底部填充用環氧樹脂組合物包含:(A)雙酚類環氧樹脂;(B)多官能環氧樹脂;(C)液體端羧基丁腈橡膠改性環氧樹脂;(D)固化劑;以及(E)潛伏固化劑。The present invention provides an epoxy resin composition for underfilling semiconductor devices. The epoxy resin composition for underfilling semiconductor devices includes: (A) bisphenol epoxy resin; (B) multifunctional epoxy resin; (C) Liquid carboxyl-terminated nitrile rubber modified epoxy resin; (D) curing agent; and (E) latent curing agent.

發明效果Invention effect

代替以往半導體器件底部填充用環氧樹脂組合物中的增塑劑,本發明的半導體器件底部填充用環氧樹脂組合物使用液體端羧基丁腈橡膠(CTBN,carboxyl terminated butadiene acrylonitrile)改性環氧樹脂,由此,在球柵陣列、晶片級封裝組裝體等的半導體元件存在不良的情況下,可以從電路基板輕鬆拆除所述組裝體等,因而再作業性優秀。Instead of the plasticizer in the conventional epoxy resin composition for underfilling semiconductor devices, the epoxy resin composition for underfilling semiconductor devices of the present invention uses liquid carboxyl terminated butadiene acrylonitrile (CTBN) modified epoxy As a result, when a semiconductor element such as a ball grid array or a wafer-level package assembly has a defect, the resin can be easily removed from the circuit board, so that the reworkability is excellent.

此外,與以往的環氧樹脂組合物相比,在利用本發明的半導體器件底部填充用環氧樹脂組合物的情況下,在低溫條件下可通過短時間的熱固化提高生產性,不僅如此,底部填充鍍膜的耐熱性、耐衝擊性及耐濕性將會得到改善。In addition, compared with the conventional epoxy resin composition, when the epoxy resin composition for underfilling a semiconductor device of the present invention is used, productivity can be improved by short-time thermal curing under low temperature conditions. The heat resistance, impact resistance and moisture resistance of the underfill coating will be improved.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:In order to have a better understanding of the above-mentioned and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:

以下,詳細說明本發明。Hereinafter, the present invention will be described in detail.

本發明提供半導體器件底部填充用環氧樹脂組合物。The invention provides an epoxy resin composition for underfilling a semiconductor device.

所述半導體器件底部填充用環氧樹脂組合物可包含:(A)雙酚類環氧樹脂;(B)多官能環氧樹脂;(C)液體端羧基丁腈橡膠改性環氧樹脂;(D)固化劑;以及(E)潛伏固化劑。The epoxy resin composition for underfilling of semiconductor devices may include: (A) bisphenol epoxy resin; (B) multifunctional epoxy resin; (C) liquid carboxy-terminated nitrile rubber modified epoxy resin; ( D) curing agent; and (E) latent curing agent.

(A)雙酚類環氧樹脂(A) Bisphenol epoxy resin

本發明的半導體器件底部填充用環氧樹脂組合物中所包含的雙酚類環氧樹脂可通過與固化劑發生反應來起到黏結劑的作用。The bisphenol epoxy resin contained in the epoxy resin composition for underfilling a semiconductor device of the present invention can function as a binder by reacting with a curing agent.

所述雙酚類環氧樹脂可以包括源自通過以下化學式1至化學式3表示的化合物的單位的至少一個。The bisphenol-based epoxy resin may include at least one unit derived from the compound represented by the following Chemical Formula 1 to Chemical Formula 3.

化學式1Chemical formula 1

Figure 02_image001
Figure 02_image001

化學式2Chemical formula 2

Figure 02_image003
Figure 02_image003

化學式3Chemical formula 3

Figure 02_image005
Figure 02_image005

所述雙酚類環氧樹脂可以包含源自通過所述化學式1至化學式3表示的化合物的單位。The bisphenol-based epoxy resin may include a unit derived from the compound represented by the chemical formula 1 to the chemical formula 3.

所述雙酚類環氧樹脂可以包含源自通過以下化學式4表示的化合物的單位。The bisphenol-based epoxy resin may include a unit derived from a compound represented by the following Chemical Formula 4.

化學式4Chemical formula 4

Figure 02_image007
Figure 02_image007

在所述化學式4中,R1 及R2 相同或不相同,分別獨立地為氫或碳數1至10的烷基。In the chemical formula 4, R 1 and R 2 are the same or different, and are each independently hydrogen or an alkyl group having 1 to 10 carbons.

所述R1 及R2 相同或不相同,可分別獨立地為氫、甲基、乙基、丙基、異丙基、叔丁基、戊基、異戊基、新戊基或叔戊基。The R 1 and R 2 are the same or different, and may be independently hydrogen, methyl, ethyl, propyl, isopropyl, tert-butyl, pentyl, isopentyl, neopentyl or tert-pentyl. .

所述R1 及R2 相同或不相同,可分別獨立地為氫或甲基。The R 1 and R 2 are the same or different, and may be independently hydrogen or methyl.

所述R1 及R2 可以為氫。The R 1 and R 2 may be hydrogen.

所述雙酚類環氧樹脂可以為雙酚A型環氧樹脂、雙酚F型環氧樹脂或這些的混合物。具體地,所述雙酚類環氧樹脂包含在所述半導體器件底部填充用環氧樹脂組合物,從而可以提高半導體底部填充鍍膜的耐熱性、耐衝擊性及耐濕性。The bisphenol epoxy resin may be bisphenol A epoxy resin, bisphenol F epoxy resin or a mixture of these. Specifically, the bisphenol-based epoxy resin is included in the epoxy resin composition for underfilling of the semiconductor device, so that the heat resistance, impact resistance and moisture resistance of the semiconductor underfill coating can be improved.

在此情況下,所述雙酚類環氧樹脂可以為液相的雙酚類環氧樹脂。在底部填充的情況下,需要完全填充元件內的微細縫隙(Gap),當填充時,需要抑制形成空間(void),因此具有低黏度,為了提高半導體元件的產品可靠性,當填充時,以防止底部填充劑向半導體元件的外部過量流動的方式控制黏度。因此,優選地,用於本發明的半導體器件底部填充用環氧樹脂組合物的所述雙酚類環氧樹脂使用液相的雙酚類環氧樹脂。In this case, the bisphenol epoxy resin may be a liquid phase bisphenol epoxy resin. In the case of underfilling, it is necessary to completely fill the fine gaps (Gap) in the element. When filling, it is necessary to suppress the formation of voids, so it has low viscosity. In order to improve the product reliability of semiconductor elements, when filling, The viscosity is controlled by preventing the underfill from flowing excessively to the outside of the semiconductor element. Therefore, it is preferable that the bisphenol epoxy resin used in the epoxy resin composition for underfilling a semiconductor device of the present invention uses a liquid phase bisphenol epoxy resin.

在25℃的溫度條件下,所述雙酚類環氧樹脂的黏度可以為2000cPs至14000cPs。在所述雙酚類環氧樹脂的黏度小於2000cPs的情況下,很難從電路基板拆除半導體器件組裝體,從而再作業性有可能發生問題,在黏度大於14000cPs的情況下,因黏度高,作業性有可能發生問題。Under the temperature condition of 25° C., the viscosity of the bisphenol epoxy resin may be 2000 cPs to 14000 cPs. When the viscosity of the bisphenol-based epoxy resin is less than 2000cPs, it is difficult to remove the semiconductor device assembly from the circuit board, which may cause problems in reworkability. When the viscosity is greater than 14000cPs, the work Sex may be problematic.

並且,所述雙酚類環氧樹脂的當量(g/eq.)可以為80g/eq.至500g/eq.,具體地,可以為160g/eq.至190g/eq.。And, the equivalent (g/eq.) of the bisphenol epoxy resin may be 80 g/eq. to 500 g/eq., specifically, it may be 160 g/eq. to 190 g/eq.

相對於20重量比至40重量比的多官能環氧樹脂相比,可以包含30重量比至55重量比的所述雙酚類環氧樹脂。在所述雙酚類環氧樹脂的含量小於30重量比的情況下,在固化後可塑性將會降低,從而可發生再作業性不良的問題,在大於55重量比的情況下,在底部填充鍍膜的耐熱性存在問題。The bisphenol-based epoxy resin may be included in a weight ratio of 30 to 55 weight ratio compared with a multifunctional epoxy resin in a weight ratio of 20 to 40 weight ratio. When the content of the bisphenol epoxy resin is less than 30 weight ratio, the plasticity will be reduced after curing, and the problem of poor reworkability may occur. In the case of more than 55 weight ratio, the underfill coating There is a problem with the heat resistance.

(B)多官能環氧樹脂(B) Multifunctional epoxy resin

本發明的半導體器件底部填充用環氧樹脂組合物中所包含的多官能環氧樹脂可起到降低所述半導體器件底部填充用環氧樹脂組合物的黏度並賦予非潔淨型的反應性稀釋劑的作用。The multifunctional epoxy resin contained in the epoxy resin composition for underfilling semiconductor devices of the present invention can reduce the viscosity of the epoxy resin composition for underfilling semiconductor devices and impart a non-clean reactive diluent The role of.

所述多官能環氧樹脂可在形成重複單位的一個單位結構內包含3個以上的官能團(functional group)。The multifunctional epoxy resin may include more than 3 functional groups in a unit structure forming a repeating unit.

所述官能團可以為羥基、烷氧基、鹵素基、醛基、羰基、羧基、胺基、腈基、硝基、醯胺基、醯亞胺基及環氧基。The functional group may be a hydroxyl group, an alkoxy group, a halogen group, an aldehyde group, a carbonyl group, a carboxyl group, an amine group, a nitrile group, a nitro group, an amide group, an amide group and an epoxy group.

所述多官能環氧樹脂可以包含至少一個環氧基作為官能團。優選地,為了降低所述半導體器件底部填充用環氧樹脂組合物的黏度,包含3個以上的環氧基作為官能團。The multifunctional epoxy resin may include at least one epoxy group as a functional group. Preferably, in order to reduce the viscosity of the epoxy resin composition for underfilling the semiconductor device, three or more epoxy groups are included as functional groups.

所述多官能環氧樹脂可以為除所述雙酚類環氧樹脂之外的多官能環氧樹脂。The multifunctional epoxy resin may be a multifunctional epoxy resin other than the bisphenol epoxy resin.

所述多官能環氧樹脂可包含源自通過以下化學式5表示的化合物的單位。The multifunctional epoxy resin may include a unit derived from a compound represented by the following Chemical Formula 5.

化學式5Chemical formula 5

Figure 02_image009
Figure 02_image009

在所述化學式5中,所述R3 為碳數1至10的烷基,n、m及p相同或不相同,分別獨立地為1至10的整數。In the chemical formula 5, the R 3 is an alkyl group having 1 to 10 carbon atoms, and n, m, and p are the same or different, and are each independently an integer of 1 to 10.

所述R3 可以為碳數1至6的烷基。The R 3 may be an alkyl group having 1 to 6 carbons.

所述R3 可以為甲基、乙基、丙基、異丙基、叔丁基、戊基、異戊基、新戊基或叔戊基。The R 3 may be methyl, ethyl, propyl, isopropyl, tert-butyl, pentyl, isopentyl, neopentyl or tert-pentyl.

所述R3 可以為烷基。The R 3 may be an alkyl group.

所述n、m及p相同或不相同,可分別獨立地為1至5的整數。The n, m, and p are the same or different, and may be an integer from 1 to 5 independently.

所述n、m及p可以為1的整數。The n, m, and p may be integers of 1.

在25℃的溫度條件下,所述多官能環氧樹脂的黏度可以為50cPs至700cPs,具體地,可以為100cPs至300cPs。在所述多官能環氧樹脂的黏度小於50cps的情況下,很難從電路基板拆除半導體器件組裝體,從而再作業性有可能發生問題,在黏度大於700cPs的情況下,因黏度高而引起作業性問題,並可引起再作業性問題。Under the temperature condition of 25° C., the viscosity of the multifunctional epoxy resin may be 50 cPs to 700 cPs, specifically, 100 cPs to 300 cPs. When the viscosity of the multifunctional epoxy resin is less than 50 cps, it is difficult to remove the semiconductor device assembly from the circuit board, so that reworkability may be problematic. When the viscosity is greater than 700 cPs, the high viscosity may cause work. Sexual problems, and can cause rework problems.

所述多官能環氧樹脂的環氧當量可以為105g/eq.至630g/eq.,具體地,可以為135g/eq.至150g/eq.。在所述多官能環氧樹脂的環氧當量小於105g/eq.的情況下,很難從電路基板拆除半導體器件組裝體,從而再作業性有可能發生問題,在環氧當量大於630g/eq.的情況下,交聯密度將會降低,從而底部填充鍍膜的耐熱性、耐衝擊性、耐濕性有可能發生問題。The epoxy equivalent of the multifunctional epoxy resin may be 105 g/eq. to 630 g/eq., specifically, 135 g/eq. to 150 g/eq. In the case where the epoxy equivalent of the multifunctional epoxy resin is less than 105g/eq., it is difficult to remove the semiconductor device assembly from the circuit board, so that reworkability may be problematic, and the epoxy equivalent is greater than 630g/eq. In the case of, the cross-linking density will be reduced, and the heat resistance, impact resistance, and moisture resistance of the underfill coating may have problems.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,所述多官能環氧樹脂可以包含20重量比至40重量比,具體地,可以包含20重量比至35重量比。在所述多官能環氧樹脂的含量小於20重量比的情況下,在固化後可塑性將會降低,從而有可能發生再作業性不良的問題,在大於40重量比的情況下,有可能發生底部填充鍍膜的耐熱性、耐衝擊性、耐濕性問題。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the multifunctional epoxy resin may include 20 weight ratio to 40 weight ratio, and specifically, may include 20 weight ratio to 35 weight ratio. When the content of the multifunctional epoxy resin is less than 20 weight ratio, the plasticity will be reduced after curing, which may cause poor reworkability. When the content is greater than 40 weight ratio, bottoms may occur. Heat resistance, impact resistance, and moisture resistance of the filled coating.

(C)液體端羧基丁腈橡膠改性環氧樹脂(C) Liquid carboxyl-terminated nitrile rubber modified epoxy resin

本發明的半導體器件底部填充用環氧樹脂組合物中所包含的液體端羧基丁腈橡膠環氧樹脂降低所述半導體器件底部填充用環氧樹脂組合物的玻璃轉化溫度(Tg)來賦予柔韌性,當利用所述半導體器件底部填充用環氧樹脂組合物來拆除半導體器件組裝體時,拆裝變得輕鬆,從而再作業性變得優秀。The liquid carboxyl-terminated nitrile butadiene rubber epoxy resin contained in the epoxy resin composition for underfilling semiconductor devices of the present invention reduces the glass transition temperature (Tg) of the epoxy resin composition for underfilling semiconductor devices to impart flexibility When using the epoxy resin composition for underfilling the semiconductor device to disassemble the semiconductor device assembly, the disassembly and assembly become easy, and the reworkability becomes excellent.

尤其,將所述液體端羧基丁腈橡膠改性環氧樹脂包含在半導體器件底部填充用環氧樹脂組合物,由此,即使不添加以往利用的增塑劑,也將會賦予柔韌性、黏結力、耐水性、耐油性等的物性來改善修改半導體器件組裝體的元件過程中的再作業性。In particular, the liquid carboxyl-terminated nitrile rubber-modified epoxy resin is included in the epoxy resin composition for underfilling of semiconductor devices, thereby imparting flexibility and adhesion even without adding conventional plasticizers. Strength, water resistance, oil resistance and other physical properties to improve the reworkability in the process of modifying the components of the semiconductor device assembly.

所述液體端羧基丁腈橡膠改性環氧樹脂可以包含3官能環氧樹脂的3官能團改性成含有末端羧酸的丁二烯的環氧樹脂。The liquid carboxy-terminated nitrile rubber modified epoxy resin may include an epoxy resin modified with a trifunctional group of a trifunctional epoxy resin into a butadiene containing terminal carboxylic acid.

在25℃的溫度條件下,所述液體端羧基丁腈橡膠改性環氧樹脂的黏度可以為1000cPs至5000cPs,具體地,可以為2000cPs至3000cPs。在所述液體端羧基丁腈橡膠改性環氧樹脂的黏度小於1000cPs的情況下,很難從電路板拆除半導體器件組裝體,從而再作業性有可能發生問題,在黏度大於5000cPs的情況下,因黏度高而導致作業性問題。Under the temperature condition of 25° C., the viscosity of the liquid carboxy-terminated nitrile rubber modified epoxy resin may be 1000 cPs to 5000 cPs, specifically, it may be 2000 cPs to 3000 cPs. When the viscosity of the liquid carboxyl-terminated nitrile rubber modified epoxy resin is less than 1000 cPs, it is difficult to remove the semiconductor device assembly from the circuit board, which may cause problems with reworkability. When the viscosity is greater than 5000 cPs, Workability problems caused by high viscosity.

所述液體端羧基丁腈橡膠改性環氧樹脂的環氧當量可以為110g/eq.至850g/eq.,具體地,可以為175g/eq.至205g/eq.。在所述液體端羧基丁腈橡膠改性環氧樹脂的環氧當量小於110g/eq.的情況下,很難從電路板拆除半導體器件組裝體,從而再作業性有可能發生問題,因高模量而發生耐衝擊性問題。在環氧當量大於850g/eq.的情況下,交聯密度將會降低,從而導致底部填充鍍膜的耐熱性問題。The epoxy equivalent of the liquid carboxy-terminated nitrile rubber modified epoxy resin may be 110 g/eq. to 850 g/eq., specifically, it may be 175 g/eq. to 205 g/eq. When the epoxy equivalent of the liquid carboxyl-terminated nitrile rubber modified epoxy resin is less than 110g/eq., it is difficult to remove the semiconductor device assembly from the circuit board, which may cause problems in reworkability due to high modulus The impact resistance problem occurs due to the amount. When the epoxy equivalent is greater than 850g/eq., the crosslinking density will decrease, which will cause the heat resistance of the underfill coating.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含5重量比至20重量比的所述液體端羧基丁腈橡膠改性環氧樹脂。在所述液體端羧基丁腈橡膠改性環氧樹脂的含量小於5重量比的情況下,在固化後無法向半導體器件底部填充用環氧樹脂賦予柔韌性而導致再作業性不良的問題,因高模量而導致耐衝擊性問題。在所述液體端羧基丁腈橡膠改性環氧樹脂的含量大於20重量比的情況下,有可能發生底部填充鍍膜的耐熱性問題。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the liquid carboxy-terminated nitrile rubber modified epoxy resin may be contained in a weight ratio of 5 to 20 weight ratio. In the case where the content of the liquid carboxy-terminated nitrile rubber modified epoxy resin is less than 5 weight ratio, the epoxy resin for underfilling semiconductor devices cannot be imparted with flexibility after curing, resulting in poor reworkability. High modulus causes impact resistance problems. In the case where the content of the liquid carboxy-terminated nitrile rubber modified epoxy resin is greater than 20 weight ratio, the heat resistance of the underfill coating may occur.

(D)固化劑(D) Curing agent

本發明的半導體器件底部填充用環氧樹脂組合物中所包含的固化劑與所述雙酚類環氧樹脂發生反應來使所述半導體器件底部填充用環氧樹脂組合物固化。The curing agent contained in the epoxy resin composition for underfilling a semiconductor device of the present invention reacts with the bisphenol epoxy resin to cure the epoxy resin composition for underfilling a semiconductor device.

所述固化劑可以包含選自由苯酚類固化劑和胺固化劑的至少一種。The curing agent may include at least one selected from phenolic curing agents and amine curing agents.

並且,所述固化劑可以為液相的固化劑。如上所述,優選地,為了控制黏度,半導體器件的底部填充用利用液相的固化劑,而並非使用固相的固化劑。In addition, the curing agent may be a liquid phase curing agent. As described above, preferably, in order to control the viscosity, the underfill of the semiconductor device uses a curing agent in a liquid phase instead of a curing agent in a solid phase.

1.苯酚類固化劑1. Phenolic curing agent

所述苯酚類固化劑提高半導體器件底部填充用環氧樹脂組合物的耐化學性、耐水性及耐熱性。The phenolic curing agent improves the chemical resistance, water resistance and heat resistance of the epoxy resin composition for underfilling of semiconductor devices.

所述苯酚類固化劑可以為無溶劑液相的酚醛清漆樹脂。具體地,所述苯酚類固化劑可以包含酚醛樹脂。The phenolic curing agent may be a novolac resin in a solvent-free liquid phase. Specifically, the phenol-based curing agent may include a phenol resin.

在25℃的溫度條件下,所述苯酚類固化劑的黏度可以為1500cPs至3500cPs。在所述苯酚類固化劑的黏度大於3500cPs的情況下,因黏度高而發生(再)作業性問題。Under the temperature condition of 25°C, the viscosity of the phenolic curing agent may be 1500 cPs to 3500 cPs. In the case where the viscosity of the phenol-based curing agent is greater than 3500 cPs, (re)workability problems occur due to the high viscosity.

所述苯酚類固化劑的羥基當量可以為100g/eq.至200g/eq.,具體地,可以為139g/eq.至143g/eq.。在所述苯酚類固化劑的羥基當量小於100g/eq.的情況下,底部填充鍍膜的再作業性有可能發生問題,在羥基當量大於200g/eq.的情況下,有可能發生利用半導體器件底部填充用環氧樹脂組合物的耐熱性問題。The hydroxyl equivalent of the phenol curing agent may be 100 g/eq. to 200 g/eq., specifically, it may be 139 g/eq. to 143 g/eq. When the hydroxyl equivalent of the phenolic curing agent is less than 100g/eq., there may be problems with the reworkability of the underfill coating, and when the hydroxyl equivalent is greater than 200g/eq., the bottom of the semiconductor device may be used. The problem of heat resistance of epoxy resin composition for filling.

2.胺固化劑2. Amine curing agent

所述胺固化劑提高半導體器件底部填充用環氧樹脂組合物的交聯密度,從而提高底部填充鍍膜的耐化學性、耐水性及耐熱性。The amine curing agent increases the crosslinking density of the epoxy resin composition for underfilling of semiconductor devices, thereby improving the chemical resistance, water resistance and heat resistance of the underfill coating.

所述胺固化劑可以包含脂肪胺化合物(或聚合物)。The amine curing agent may include a fatty amine compound (or polymer).

所述胺固化劑可以為在兩末端包含伯胺的脂肪胺化合物(或聚合物),具體地,可以為在兩末端包含伯胺的脂肪族聚醚胺化合物(或聚合物)。The amine curing agent may be an aliphatic amine compound (or polymer) containing primary amines at both ends, specifically, may be an aliphatic polyetheramine compound (or polymer) containing primary amines at both ends.

優選地,在所述半導體器件底部填充用環氧樹脂組合物的耐熱性、耐衝擊性、耐濕性的側面,所述胺固化劑包含在兩末端具有伯胺的聚氧丙二胺。Preferably, on the heat resistance, impact resistance, and moisture resistance of the epoxy resin composition for underfilling the semiconductor device, the amine curing agent contains polyoxypropylene diamine having primary amines at both ends.

所述胺固化劑可以包含通過以下化學式6表示的化合物。The amine curing agent may include a compound represented by the following Chemical Formula 6.

化學式6Chemical formula 6

Figure 02_image011
Figure 02_image011

在所述化學式6中,q為10至50的數。In the chemical formula 6, q is a number from 10 to 50.

所述q為30至40的數。The q is a number from 30 to 40.

所述胺類固化劑的胺當量可以為0.3meq./g至3meq./g。在所述胺類固化劑的胺當量小於0.3meq./g的情況下,基於與所述雙酚類環氧樹脂交聯反應的交聯密度將會降低,從而發生底部填充鍍膜的耐化學性、耐水性、耐熱性等問題,在胺當量大於3meq./g的情況下,因過固化而發生再作業性問題。The amine equivalent of the amine curing agent may be 0.3 meq./g to 3 meq./g. When the amine equivalent of the amine curing agent is less than 0.3 meq./g, the crosslink density based on the crosslinking reaction with the bisphenol epoxy resin will decrease, resulting in the chemical resistance of the underfill coating , Water resistance, heat resistance, etc., when the amine equivalent is greater than 3meq./g, reworkability problems occur due to over-curing.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含10重量比至20重量比的所述固化劑。在所述固化劑的含量小於10重量比的情況下,有可能發生利用所述半導體器件底部填充用環氧樹脂組合物的再作業性及耐衝擊性問題,在大於20重量比的情況下,發生底部填充鍍膜的耐熱性降低憂慮。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the curing agent may be included in a weight ratio of 10 to 20 weight ratio. When the content of the curing agent is less than 10 weight ratio, the reworkability and impact resistance of the epoxy resin composition for underfilling semiconductor devices may occur. When the content is more than 20 weight ratio, There is a concern that the heat resistance of the underfill coating will decrease.

並且,為了底部填充鍍膜的優秀物性,可利用所述半導體器件底部填充用環氧樹脂組合物按5:1至10:1的重量比包含所述苯酚類固化劑和胺固化劑。在所述苯酚類固化劑與胺類固化劑的重量比小於5:1的情況下,在低溫狀態的固化性將會發生問題,從而底部填充鍍膜的耐熱性、耐水性、耐衝擊性等的物性發生問題,在重量比大於10:1的情況下,因過固化而導致底部填充地膜變得堅硬,從而再作業性變得不良。In addition, in order to have excellent physical properties of the underfill coating, the epoxy resin composition for underfilling of semiconductor devices may be used to contain the phenolic curing agent and the amine curing agent in a weight ratio of 5:1 to 10:1. In the case where the weight ratio of the phenolic curing agent to the amine curing agent is less than 5:1, the curability in the low temperature state will be problematic, and the heat resistance, water resistance, impact resistance, etc. of the underfill coating Physical properties are problematic. When the weight ratio is greater than 10:1, the underfill film becomes hard due to over-curing, and reworkability becomes poor.

(E)潛伏固化劑(E) Latent curing agent

本發明的半導體器件底部填充用環氧樹脂組合物中所包含的潛伏固化劑為通過熱、光、壓力、濕氣等的外部刺激開始固化反應的固化劑,包含在所述半導體器件底部填充用環氧樹脂組合物,由此,與以往的半導體器件底部填充用環氧樹脂組合物相比,在低溫(60℃以下)下,優選地,在常溫(15℃-25℃)下也可以實現短時間的熱固化。The latent curing agent contained in the epoxy resin composition for underfilling a semiconductor device of the present invention is a curing agent that starts a curing reaction by external stimuli such as heat, light, pressure, moisture, etc., and is included in the underfilling of the semiconductor device. The epoxy resin composition, therefore, compared with the conventional epoxy resin composition for underfilling of semiconductor devices, it can be realized at low temperature (60°C or less), preferably at normal temperature (15°C-25°C) Short time heat curing.

除官能團(functional group)之外,所述潛伏固化劑在分子內包含活性氫(active hydrogen),從而順暢地向環氧樹脂內分散,提高本發明的半導體器件底部填充用環氧樹脂組合物的常溫條件下的儲存穩定性,也可以實現在常溫條件下的迅速固化。In addition to the functional group, the latent curing agent contains active hydrogen in the molecule, thereby smoothly dispersing into the epoxy resin, and improving the performance of the epoxy resin composition for underfilling a semiconductor device of the present invention. Storage stability under normal temperature conditions can also achieve rapid curing under normal temperature conditions.

所述潛伏固化劑可以包含選自由微膠囊型潛伏固化劑、胺加合物型潛伏固化劑、雙氰胺(DICYANDIAMIDE)及其的衍生物中的至少一種。The latent curing agent may include at least one selected from a microcapsule type latent curing agent, an amine adduct type latent curing agent, dicyandiamide (DICYANDIAMIDE) and derivatives thereof.

並且,所述潛伏固化劑可以為液相。與固相的潛伏固化劑相比,當包含在本發明的半導體器件底部填充用環氧樹脂組合物時可以提高分散性。Also, the latent curing agent may be a liquid phase. Compared with a solid-phase latent curing agent, when included in the epoxy resin composition for underfilling a semiconductor device of the present invention, dispersibility can be improved.

所述微膠囊型潛伏固化劑是指以固化劑為核並通過環氧樹脂、聚氨酯樹脂、聚苯乙烯樹脂、聚醯亞胺樹脂等的高分子物質或環糊精等作為外殼(shell)覆蓋,由此減少環氧樹脂與固化劑之間的接觸。雙氰胺的衍生物為在雙氰胺結合各種化合物,可以為與環氧樹脂的反應物、塑膠化合物或與丙烯酸化合物反應物等。The microcapsule-type latent curing agent refers to the curing agent as the core and is covered by a polymer material such as epoxy resin, polyurethane resin, polystyrene resin, polyimide resin, or cyclodextrin as a shell. , Thereby reducing the contact between epoxy resin and curing agent. The derivatives of dicyandiamide combine various compounds with dicyandiamide, and can be reactants with epoxy resins, plastic compounds, or reactants with acrylic compounds.

作為微膠囊型潛伏固化劑的市場銷售品,可以使用「新星治療(授權商標)」X-3721、HX-3722(以上,旭化成化學(株)製備)等。As commercial products of the microcapsule type latent curing agent, "Xinxing Therapy (authorized trademark)" X-3721, HX-3722 (above, manufactured by Asahi Kasei Chemical Co., Ltd.), etc. can be used.

在所述微膠囊型潛伏固化劑的情況下,固化劑被膠囊包圍,在特定溫度條件下,膠囊裂開且裝在裡面的反應性催化劑流出並開始進行反應。因此,具有低溫下固化特性且具有儲存穩定性優秀的效果。In the case of the microcapsule-type latent curing agent, the curing agent is surrounded by a capsule, and under a certain temperature condition, the capsule is broken and the reactive catalyst contained therein flows out and starts to react. Therefore, it has the effect of curing at low temperature and excellent storage stability.

所述胺加合物型潛伏固化劑在使本發明的半導體器件底部填充用環氧樹脂組合物的常溫固化變得簡單的目的上還可以包含作為胺化合物與環氧化合物的反應產物的胺環氧管型潛伏固化劑。The amine adduct type latent curing agent may further include an amine ring as a reaction product of an amine compound and an epoxy compound for the purpose of simplifying the room temperature curing of the epoxy resin composition for underfilling a semiconductor device of the present invention Oxygen tube type latent curing agent.

具體地,所述胺加合物型潛伏固化劑為具有伯氨基、仲氨基或叔氨基的化合物或利用多種咪唑衍生物等的活性成分來使其與可以與其進行反應的化合物進行反應來實現高分子量化並在保存溫度中不溶解的物質。Specifically, the amine adduct type latent curing agent is a compound having a primary, secondary or tertiary amino group or a variety of active ingredients such as imidazole derivatives to make it react with a compound that can react with it to achieve high A substance that is molecularized and insoluble at storage temperature.

例如,用於所述胺加合物型潛伏固化劑的製備的環氧化合物可以包含聚縮水甘油醚、聚縮水甘油酯、聚縮水甘油醚酯、縮水甘油胺化合物、單官能環氧化合物(丁基縮水甘油醚、苯基縮水甘油醚)或多官能環氧化合物(酚醛清漆樹脂,甲酚酚醛清漆樹脂等),但並不局限於此。For example, the epoxy compound used in the preparation of the amine adduct type latent curing agent may include polyglycidyl ether, polyglycidyl ester, polyglycidyl ether ester, glycidyl amine compound, monofunctional epoxy compound (butyl Glycidyl ether, phenyl glycidyl ether) or polyfunctional epoxy compounds (novolak resin, cresol novolak resin, etc.), but not limited to these.

並且,用於所述胺加合物型潛伏固化劑的製備的胺化合物在分子內包含至少一個可以與環氧基發生反應的活性氫,只要在分子內包含至少一個胺基就可以無限制地使用。具體地,優選地,在分子內具有叔胺基的化合物提高與環氧樹脂的常溫條件下的固化反應性。In addition, the amine compound used in the preparation of the amine adduct type latent curing agent contains at least one active hydrogen capable of reacting with an epoxy group in the molecule, as long as it contains at least one amine group in the molecule. use. Specifically, it is preferable that the compound having a tertiary amine group in the molecule increases the curing reactivity with the epoxy resin under normal temperature conditions.

例如,所述胺化合物可以包含二甲基氨基丙胺、二乙基氨基丙胺、二丙基氨基丙胺、二丁基氨基丙胺、二甲基氨基乙胺、二乙氨基乙胺、N-甲基呱嗪、2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-二甲基氨基乙醇、1-甲基-2-二甲基氨基乙醇、1-苯氧基甲基-2-二甲基氨基乙醇、2-二乙基氨基乙醇、1-丁氧基甲基-2-二甲基氨基乙醇、1-(2-羥基-3-苯氧基丙基)-2-甲基咪唑、1-(2-羥基-3-苯氧基丙基)-2-乙基-4-甲基咪唑、1-(2-羥基-3-丁氧基丙基)-2-甲基咪唑、1-(2-羥基-3-丁氧基丙基)-2-乙基-4-甲基咪唑、1-(2-羥基-3-苯氧基丙基)-2-苯基咪唑啉、1-(2-羥基-3-丁氧基丙基)-2-甲基咪唑啉、2-(二甲基氨基甲基)苯酚、2,4,6-三(二甲基氨基甲基)苯酚、N-β-羥乙基嗎啉、2-二甲基氨基乙二醇、2-巰基吡啶、2-苯並咪唑、2-巰基苯並咪唑、2-巰基苯並噻唑、4-巰基吡啶、N,N-二甲基氨基苯甲酸、N,N-二甲基甘氨酸等。For example, the amine compound may include dimethylaminopropylamine, diethylaminopropylamine, dipropylaminopropylamine, dibutylaminopropylamine, dimethylaminoethylamine, diethylaminoethylamine, and N-methylaminopropylamine. Oxazine, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-dimethylaminoethanol, 1-methyl-2-dimethylamino Ethanol, 1-phenoxymethyl-2-dimethylaminoethanol, 2-diethylaminoethanol, 1-butoxymethyl-2-dimethylaminoethanol, 1-(2-hydroxy-3 -Phenoxypropyl)-2-methylimidazole, 1-(2-hydroxy-3-phenoxypropyl)-2-ethyl-4-methylimidazole, 1-(2-hydroxy-3- Butoxypropyl)-2-methylimidazole, 1-(2-hydroxy-3-butoxypropyl)-2-ethyl-4-methylimidazole, 1-(2-hydroxy-3-benzene Oxypropyl)-2-phenylimidazoline, 1-(2-hydroxy-3-butoxypropyl)-2-methylimidazoline, 2-(dimethylaminomethyl)phenol, 2, 4,6-Tris(dimethylaminomethyl)phenol, N-β-hydroxyethylmorpholine, 2-dimethylaminoglycol, 2-mercaptopyridine, 2-benzimidazole, 2-mercaptobenzene Biimidazole, 2-mercaptobenzothiazole, 4-mercaptopyridine, N,N-dimethylaminobenzoic acid, N,N-dimethylglycine, etc.

作為胺加合物型潛伏固化劑的市場銷售品,可以使用「富士治療(授權商標)」FXR-1030、FXR-1081、FXR 1000、FXR 1110、FXR 1120(以上,T&K Toka製備)等。As commercial products of the amine adduct type latent curing agent, "Fuji Therapeutics (authorized trademark)" FXR-1030, FXR-1081, FXR 1000, FXR 1110, FXR 1120 (above, manufactured by T&K Toka), etc. can be used.

所述雙氰胺的衍生物是指雙氰胺與各種化合物的結合,可以為與環氧樹脂反應物、塑膠化合物或與丙烯酸化合物的反應物等。The derivatives of dicyandiamide refer to the combination of dicyandiamide and various compounds, and can be reactants with epoxy resins, plastic compounds, or acrylic compounds.

在所述潛伏固化劑使用雙氰胺的情況下,作為市場銷售品可以為DICY-7、DICY-15(以上,日本環氧樹脂(株)製備)等。When dicyandiamide is used as the latent curing agent, DICY-7, DICY-15 (above, manufactured by Japan Epoxy Co., Ltd.), etc. may be used as marketed products.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含7重量比至35重量比的所述潛伏固化劑,具體地,可以包含7重量比至30重量比。在所述潛伏固化劑的含量小於7重量比的情況下,在150℃的溫度條件下,在3分鐘以內發生未固化,從而耐熱性、耐衝擊性等的物性將會降低,在大於35重量比的情況下,常溫穩定性並不良好,從而可發生使用時間變短的問題。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the latent curing agent may be included in a weight ratio of 7 to 35 weight ratio, and specifically, it may be included in a weight ratio of 7 to 30 weight ratio. When the content of the latent curing agent is less than 7 weight ratio, under the temperature condition of 150 ℃, uncuring occurs within 3 minutes, so the physical properties such as heat resistance and impact resistance will be reduced. In this case, the room temperature stability is not good, and the problem of shortening the use time may occur.

所述固化劑及所述潛伏固化劑可按0.4:1至2:1的重量比包含。在所述固化劑與潛伏固化劑的重量比小於0.4:1的情況下,無法實現在常溫條件下的迅速固化,底部填充鍍膜的耐熱性、耐衝擊性等的物性將會降低,在大於2:1的情況下,在常溫條件下的穩定性並不良好,從而使用時間將會變短。The curing agent and the latent curing agent may be included in a weight ratio of 0.4:1 to 2:1. When the weight ratio of the curing agent to the latent curing agent is less than 0.4:1, rapid curing under normal temperature conditions cannot be achieved, and the physical properties such as heat resistance and impact resistance of the underfill coating will be reduced. In the case of :1, the stability under normal temperature conditions is not good, so the use time will be shorter.

(F)此外的添加劑(F) Other additives

本發明的半導體器件底部填充用環氧樹脂組合物為了在常溫條件下的穩定性、抑制及去除樹脂內的氣泡發生並為了提高黏結力而包含添加劑。The epoxy resin composition for underfilling a semiconductor device of the present invention contains additives for stability under normal temperature conditions, suppression and removal of air bubbles in the resin, and for improving adhesion.

所述添加劑可包含穩定劑、消泡劑、黏結力增強劑等。The additives may include stabilizers, defoamers, adhesion enhancers, and the like.

所述穩定劑賦予所述半導體器件底部填充用環氧樹脂組合物的常溫條件下的穩定性,並可以使長期保存性及再作業性優秀,所述穩定劑為了實現所述效果而可以包含硼酸酯化合物。The stabilizer imparts stability to the epoxy resin composition for underfilling of semiconductor devices under normal temperature conditions, and can provide excellent long-term storage and reworkability, and the stabilizer may contain boron in order to achieve the effect Acid ester compound.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含1重量比至5重量比的所述穩定劑。在所述穩定劑的含量小於1重量比的情況下,在常溫條件下的穩定性將會降低,從而有可能發生(再)作業性問題,在大於5重量比的情況下,可能發生因未固化等而導致耐熱性及耐衝擊性降低的問題。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the stabilizer may be included in a weight ratio of 1 to 5 weight ratio. In the case where the content of the stabilizer is less than 1 weight ratio, the stability under normal temperature conditions will be reduced, so that (re)workability problems may occur. When the content is greater than 5 weight ratio, failures may occur. Curing, etc., lead to the problem of reduced heat resistance and impact resistance.

所述消泡劑抑制及去除在所述半導體器件底部填充用環氧樹脂內發生的氣泡,所述消泡劑可以包含聚烷基矽氧烷。The defoaming agent suppresses and removes bubbles generated in the epoxy resin for underfilling the semiconductor device, and the defoaming agent may include polyalkylsiloxane.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含0.1重量比至5重量比的所述消泡劑。在所述消泡劑的含量滿足所述範圍的情況下,可通過去除半導體器件底部填充用環氧樹脂內的氣泡來提高底部填充鍍膜的耐衝擊性、耐熱性、耐蝕性等的物性。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the defoamer may be included in a weight ratio of 0.1 to 5 weight ratio. When the content of the defoamer satisfies the above range, physical properties such as impact resistance, heat resistance, and corrosion resistance of the underfill plating film can be improved by removing air bubbles in the epoxy resin for underfilling semiconductor devices.

所述黏結力增強劑可以提高利用所述半導體器件底部填充用環氧樹脂組合物的半導體器件底部填充劑的黏結力,為了實現所述效果,所述黏結力增強劑可以包含為了提高環氧樹脂的黏結力而通常使用的矽烷偶聯劑。The adhesion enhancer can increase the adhesion of the semiconductor device underfill using the epoxy resin composition for underfilling the semiconductor device. In order to achieve the effect, the adhesion enhancer may include an epoxy resin The bonding force is usually used silane coupling agent.

以30重量比至55重量比的所述雙酚類環氧樹脂為基準,可以包含0.1重量比至5重量比的所述黏結力增強劑。在所述黏結力增強劑的含量滿足所述範圍的情況下,提高半導體器件底部填充的黏結力,在再作業之後,在電路板順暢地執行半導體器件的底部填充作業。Based on the bisphenol epoxy resin in a weight ratio of 30 to 55 weight ratio, the adhesion enhancer may be included in a weight ratio of 0.1 to 5 weight ratio. When the content of the adhesion strength enhancer satisfies the range, the adhesion strength of the underfill of the semiconductor device is improved, and after the rework, the underfill operation of the semiconductor device is smoothly performed on the circuit board.

以下,通過實施例,更加詳細說明本發明。Hereinafter, the present invention will be explained in more detail through examples.

但是,這些實施例僅用於幫助本發明的理解,本發明的範圍並不局限於這些實施例。However, these embodiments are only used to help the understanding of the present invention, and the scope of the present invention is not limited to these embodiments.

實施例1至實施例4Example 1 to Example 4

通過以下表1所示的組合配合來製備了環氧樹脂組合物。The epoxy resin composition was prepared by the combination and compounding shown in Table 1 below.

比較例1Comparative example 1

通過以下表2所示的組合配合來製備了環氧樹脂組合物。The epoxy resin composition was prepared by the combination and compounding shown in Table 2 below.

表1 區分 實施例1 實施例2 實施例3 實施例4 實施例5 雙酚類環氧樹脂 42.0 42.0 42.0 42.0 42.0 多官能環氧樹脂 25.0 25.0 25.0 25.0 25.0 液體端羧基丁腈橡膠改性環氧樹脂 6.0 18.0 6.0 6.0 6.0 固化劑 苯酚類固化劑 11.5 11.5 11.5 11.5 11.5 胺固化劑 1.5 1.5 1.5 1.5 1.5 潛伏固化劑 胺加合物型 11.5 11.5 23.0 11.5 - 微膠囊型 - - - - 7.5 穩定劑 1.5 1.5 1.5 0 1.5 消泡劑 0.5 0.5 0.5 0.5 0.5 黏結力增強劑 0.5 0.5 0.5 0.5 0.5 Table 1 distinguish Example 1 Example 2 Example 3 Example 4 Example 5 Bisphenol epoxy resin 42.0 42.0 42.0 42.0 42.0 Multifunctional epoxy resin 25.0 25.0 25.0 25.0 25.0 Liquid carboxyl-terminated nitrile rubber modified epoxy resin 6.0 18.0 6.0 6.0 6.0 Hardener Phenol curing agent 11.5 11.5 11.5 11.5 11.5 Amine curing agent 1.5 1.5 1.5 1.5 1.5 Latent curing agent Amine adduct type 11.5 11.5 23.0 11.5 - Microcapsule type - - - - 7.5 stabilizer 1.5 1.5 1.5 0 1.5 Defoamer 0.5 0.5 0.5 0.5 0.5 Adhesion enhancer 0.5 0.5 0.5 0.5 0.5

表2 區分 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 雙酚類環氧樹脂 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 多官能環氧樹脂 25.0 25.0 25.0 25.0 25.0 25.0 15 42 液體端羧基丁腈橡膠改性環氧樹脂 - - 25 6 6 6 6 6 苯氧樹脂 - 6 - - - - - - 固化劑 苯酚類固化劑 11.5 11.5 11.5 11.5 11.5 11.5 11.5 11.5 胺固化劑 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 咪唑固化劑 - - - 0.5 - - - - 潛伏固化劑 11.5 - - - 5 40 11.5 11.5 穩定劑 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 泡劑 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 黏結力增強劑 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Table 2 distinguish Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Comparative example 6 Comparative example 7 Comparative example 8 Bisphenol epoxy resin 42.0 42.0 42.0 42.0 42.0 42.0 42.0 42.0 Multifunctional epoxy resin 25.0 25.0 25.0 25.0 25.0 25.0 15 42 Liquid carboxyl-terminated nitrile rubber modified epoxy resin - - 25 6 6 6 6 6 Phenoxy resin - 6 - - - - - - Hardener Phenol curing agent 11.5 11.5 11.5 11.5 11.5 11.5 11.5 11.5 Amine curing agent 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 Imidazole curing agent - - - 0.5 - - - - Latent curing agent 11.5 - - - 5 40 11.5 11.5 stabilizer 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 Foaming agent 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Adhesion enhancer 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5

所述實施例及比較例中所使用的結構如下。The structures used in the examples and comparative examples are as follows.

雙酚類環氧樹脂:苯酚-甲醛-環氧氯丙烷聚合物(Formaldehyde polymer with (chloromethyl)oxirane and phenol),CAS NO.9003-36-5Bisphenolic epoxy resin: Formaldehyde polymer with (chloromethyl)oxirane and phenol, CAS NO.9003-36-5

多官能環氧樹脂:YH-300(國都化學)Multifunctional epoxy resin: YH-300 (Guodu Chemical)

液體端羧基丁腈橡膠改性環氧樹脂:KR-207(國都化學)Liquid carboxyl-terminated nitrile rubber modified epoxy resin: KR-207 (Guodu Chemical)

苯酚類固化劑:Formaldehyde polymer with 2-(2-propenyl)phenol,CAS NO.27924-97-6Phenol curing agent: Formaldehyde polymer with 2-(2-propenyl)phenol, CAS NO.27924-97-6

胺固化劑:雙氨基聚丙烯醚(Polyoxypropylenediamine),CAS NO.9046-10-0Amine curing agent: Polyoxypropylenediamine, CAS NO.9046-10-0

潛伏固化劑(胺加合物型):T&K Toka製備,Fujicure FXR-1081Latent curing agent (amine adduct type): prepared by T&K Toka, Fujicure FXR-1081

潛伏固化劑(微膠囊型):Asahi Chemical製備,NOVACURE HXA-3932HPLatent curing agent (microcapsule type): manufactured by Asahi Chemical, NOVACURE HXA-3932HP

咪唑固化劑:1-(2-氰乙基)-2-乙基-4-甲基咪唑(1-(2-Cyanoethyl)-2-ethyl-4-methylimidazole),Shikoku Chemicals製備,2E4MZ-CN,CAS NO.23996-25-0Imidazole curing agent: 1-(2-Cyanoethyl)-2-ethyl-4-methylimidazole (1-(2-Cyanoethyl)-2-ethyl-4-methylimidazole), manufactured by Shikoku Chemicals, 2E4MZ-CN, CAS NO.23996-25-0

穩定劑:硼酸酯化合物Stabilizer: borate compound

消泡劑:聚甲基烷基矽氧烷(Polymethylalkylsiloxane)Defoamer: Polymethylalkylsiloxane (Polymethylalkylsiloxane)

黏結力增強劑:3-環氧丙氧丙基三甲氧基矽烷((3-glycidoxypropyl)trimethoxysilane)Adhesion enhancer: 3-glycidoxypropyl trimethoxysilane ((3-glycidoxypropyl) trimethoxysilane)

實驗例Experimental example

通過如下評價條件對所述實施例1至實施例5及比較例1至比較例8中所製備的半導體器件底部填充用環氧樹脂組合物及固化物(底部填充鍍膜)的物性進行評價的結果呈現在以下表3及表4。The following evaluation conditions were used to evaluate the physical properties of the epoxy resin composition for underfilling of semiconductor devices and the cured product (underfill coating) prepared in Examples 1 to 5 and Comparative Examples 1 to 8 Presented in Table 3 and Table 4 below.

物性評價及測定條件Physical property evaluation and measurement conditions

所製備的半導體器件底部填充用環氧樹脂組合物及固化物的物性通過如下方法測定。The physical properties of the prepared epoxy resin composition for underfilling of semiconductor devices and the cured product were measured by the following methods.

1.黏度(cps):在25℃的溫度條件下通過布魯克菲爾德黏度計測定1. Viscosity (cps): measured by Brookfield viscometer at 25°C

2.流速(flow rate)(sec):在評價用元件底部填滿所需要的時間2. Flow rate (sec): the time required to fill the bottom of the evaluation element

3.空間(void):在評價用元件底部填充之後,確認在固化前後是否包括空間3. Void: After filling the bottom of the evaluation component, confirm whether the space is included before and after curing

4.適用期(pot-life):在常溫條件下,與初期黏度相比,上升2倍所需要的時間4. Pot-life: Under normal temperature conditions, the time it takes for the viscosity to rise twice compared with the initial viscosity

5.再作業性:在250℃的溫度條件下對評價用元件進行加熱之後取出底部填充劑5. Reworkability: The underfill is taken out after heating the evaluation element at a temperature of 250°C

6.黏結力:通過Die Shear TEST或Lap Shear Test評價6. Adhesion: Passed Die Shear TEST or Lap Shear Test evaluation

表3 區分 實施例1 實施例2 實施例3 實施例4 實施例5 黏度(cps) 10rpm 3000 5700 4600 2900 4200 流速(sec) 9 12 11 9 11 空間(void) × × × × × Tg 56 28 67 55 62 適用期 3 3 0.5 1 3 再作業性 黏結力(kgf) 5 3 7 5 5 table 3 distinguish Example 1 Example 2 Example 3 Example 4 Example 5 Viscosity (cps) 10rpm 3000 5700 4600 2900 4200 Flow rate (sec) 9 12 11 9 11 Space (void) × × × × × Tg 56 28 67 55 62 valid period 3 3 0.5 1 3 Reworkability Bonding force (kgf) 5 3 7 5 5

表4 區分 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 黏度(cps) 10rpm 1,500 7,800 5,200 2,100 2,400 4,300 4,400 1,700 流速(sec) 8 37 12 8 8 11 11 7 反應性 固化 固化 固化 固化 未固化 固化 固化 固化 空間(void) × × × × × × Tg 92 88 41 61 - 57 65 39 適用期 3 3 3 >1 4 >1 3 3 再作業性 × × - 黏結力(kgf) 9 10 2 1 - 5 5 >1 Table 4 distinguish Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative example 5 Comparative example 6 Comparative example 7 Comparative example 8 Viscosity (cps) 10rpm 1,500 7,800 5,200 2,100 2,400 4,300 4,400 1,700 Flow rate (sec) 8 37 12 8 8 11 11 7 Reactivity Curing Curing Curing Curing Uncured Curing Curing Curing Space (void) × × × × × × Tg 92 88 41 61 - 57 65 39 valid period 3 3 3 >1 4 >1 3 3 Reworkability × × - Bonding force (kgf) 9 10 2 1 - 5 5 >1

以上,本發明僅對所記載的實施例進行了詳細說明,本發明所屬技術領域的普通技術人員可以在本發明的技術思想範圍內進行多種變形及修改,這種變形及修改屬於發明要求保護範圍。Above, the present invention only describes the described embodiments in detail. Those of ordinary skill in the technical field to which the present invention belongs can make various modifications and modifications within the scope of the technical idea of the present invention. Such modifications and modifications belong to the scope of protection of the invention. .

no

no

Claims (6)

一種半導體器件底部填充用環氧樹脂組合物,其特徵在於,包含: (A)雙酚類環氧樹脂; (B)多官能環氧樹脂; (C)液體端羧基丁腈橡膠改性環氧樹脂; (D)固化劑;以及 (E)潛伏固化劑。An epoxy resin composition for underfilling a semiconductor device, which is characterized in that it comprises: (A) Bisphenol epoxy resin; (B) Multifunctional epoxy resin; (C) Liquid carboxyl-terminated nitrile rubber modified epoxy resin; (D) Curing agent; and (E) Latent curing agent. 如申請專利範圍第1項所述之半導體器件底部填充用環氧樹脂組合物,其中,按30至55:20至40:5至20的重量比包含該(A)雙酚類環氧樹脂、該(B)多官能環氧樹脂及該(C)液體端羧基丁腈橡膠改性環氧樹脂。The epoxy resin composition for underfilling of semiconductor devices as described in item 1 of the scope of patent application, wherein the (A) bisphenol epoxy resin, The (B) multifunctional epoxy resin and the (C) liquid carboxyl-terminated nitrile rubber modified epoxy resin. 如申請專利範圍第1項所述之半導體器件底部填充用環氧樹脂組合物,其中, 該(B)多官能環氧樹脂在形成重複單位的一個單位結構內包含3個以上的官能團, 該些官能團包含選自由羥基、烷氧基、鹵素基、醛基、羰基、羧基、胺基、腈基、硝基、醯胺基、醯亞胺基及環氧基中的至少一種。The epoxy resin composition for underfilling semiconductor devices as described in item 1 of the scope of patent application, wherein: The (B) multifunctional epoxy resin contains 3 or more functional groups in a unit structure forming a repeating unit, These functional groups include at least one selected from the group consisting of a hydroxyl group, an alkoxy group, a halogen group, an aldehyde group, a carbonyl group, a carboxyl group, an amine group, a nitrile group, a nitro group, an amide group, an amide group, and an epoxy group. 如申請專利範圍第1項所述之半導體器件底部填充用環氧樹脂組合物,其中,按0.4:1至2:1的重量比包含該(D)固化劑及該(E)潛伏固化劑。The epoxy resin composition for underfilling a semiconductor device as described in the first item of the scope of patent application, wherein the (D) curing agent and the (E) latent curing agent are included in a weight ratio of 0.4:1 to 2:1. 如申請專利範圍第1項所述之半導體器件底部填充用環氧樹脂組合物,其中,該(D)固化劑按5:1至10:1的重量比包含苯酚類固化劑及胺類固化劑。The epoxy resin composition for underfilling a semiconductor device as described in item 1 of the patent application, wherein the (D) curing agent contains a phenol curing agent and an amine curing agent in a weight ratio of 5:1 to 10:1 . 如申請專利範圍第1項所述之半導體器件底部填充用環氧樹脂組合物,其中,該(E)潛伏固化劑包含選自由微膠囊型潛伏固化劑、胺加合物型潛伏固化劑、雙氰胺及其衍生物中的至少一種。The epoxy resin composition for underfilling semiconductor devices as described in item 1 of the scope of patent application, wherein the (E) latent curing agent comprises a microcapsule type latent curing agent, an amine adduct type latent curing agent, and a double At least one of cyanamide and its derivatives.
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