TW202018123A - Plated glass substrate manufacturing method and glass substrate - Google Patents
Plated glass substrate manufacturing method and glass substrate Download PDFInfo
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- TW202018123A TW202018123A TW108127769A TW108127769A TW202018123A TW 202018123 A TW202018123 A TW 202018123A TW 108127769 A TW108127769 A TW 108127769A TW 108127769 A TW108127769 A TW 108127769A TW 202018123 A TW202018123 A TW 202018123A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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Abstract
Description
本發明係關於一種鍍覆處理後之玻璃基材的製造方法及玻璃基材。 The invention relates to a method for manufacturing a glass substrate after plating treatment and a glass substrate.
專利文獻1記載有一種在玻璃基板上的無電解鍍覆方法,係在不進行使用有害氟化物之蝕刻處理,而可進行玻璃基板之鍍覆前處理,來形成鍍覆層時,便會使對基板的密合性呈現良好,而可不在鍍覆中產生起泡以得到電氣特性良好的鍍覆層。
此在玻璃基板上的無電解鍍覆方法係:第1,在玻璃基板上進行無電解銅鍍覆時,於脫脂處理、感受性化處理及催化劑活化處理後,在含有0.1~15g/L的聚乙二醇的無電解銅鍍覆浴中進行無電解銅鍍覆,第2,在玻璃基板上進行無電解鎳鍍覆時,於脫脂處理、感受性化處理及催化劑活化處理後,在使用作為配位劑之羧酸類的無電解鎳鍍覆浴中進行無電解鎳鍍覆。 This method of electroless plating on a glass substrate is: first, when electroless copper plating is performed on a glass substrate, after degreasing treatment, sensitization treatment and catalyst activation treatment, it contains 0.1 to 15 g/L of polymer. Ethylene glycol is used for electroless copper plating in the electroless copper plating bath. Second, when electroless nickel plating is performed on the glass substrate, after degreasing treatment, sensitization treatment and catalyst activation treatment, use Electroless nickel plating is carried out in the electroless nickel plating bath of carboxylic acid of the bit agent.
專利文獻2記載有一種使用分子接合技術之電氣電子機器的製造方法。此電氣電子機器的製造方法係包含:於金屬體施予用以接著第1分子之第1前處理的工序;藉由接著第1分子來形成會接著於金屬體之絕緣膜的工序;於絕緣膜表面施予用以接著第2分子之第2前處理的工序;於絕緣膜上施予無電解鍍覆,並藉由接著第2分子來形成會接著於絕緣膜之導體的工序;於導體上施予電解鍍覆,來形成電路圖案之工序;以及將半導體元件封裝於電路圖案之工序。 Patent Document 2 describes a method of manufacturing electrical and electronic equipment using molecular bonding technology. The manufacturing method of this electrical and electronic device includes: a step of applying a first pretreatment followed by a first molecule to a metal body; a step of forming an insulating film to be adhered to the metal body by following the first molecule; The step of applying a second pretreatment to the second molecule on the surface of the film; the step of applying electroless plating on the insulating film and forming the conductor that will be adhered to the insulating film by following the second molecule; The step of applying electrolytic plating to form a circuit pattern; and the step of packaging the semiconductor element in the circuit pattern.
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特開2005-256122號公報 Patent Document 1: Japanese Patent Laid-Open No. 2005-256122
專利文獻2:日本特許5624703號公報 Patent Document 2: Japanese Patent No. 5624703
以往,使用分子接合技術來在玻璃基板進行鍍覆是相當困難的。 In the past, it has been quite difficult to plate a glass substrate using molecular bonding technology.
本發明之目的在於提供一種可使用分子接合技術來在玻璃基材形成鍍覆皮膜的鍍覆處理後之玻璃基材的製造方法及使用分子接合技術來形成鍍覆皮膜之玻璃基材。 An object of the present invention is to provide a method for manufacturing a glass substrate after a plating process that can use a molecular bonding technique to form a plating film on a glass substrate and a glass substrate that uses a molecular bonding technique to form a plating film.
本發明係包含:洗淨工序,係洗淨玻璃基材;前處理工序,係對以該洗淨工序所處理後之該玻璃基材施予用以分子接合的前處理;熱處理工序,係對以該前處理工序所處理後之該玻璃基材施予熱處理;催化劑供給工序,係對以該熱處理工序所處理後之該玻璃基材供給催化劑;催化劑活化工序,係讓該催化劑在以該催化劑供給工序所處理後之該玻璃基材活化;以及無電解鍍覆工序,係對以該催化劑活化工序所處理後之該玻璃基材施予無電解鍍覆。 The present invention includes: a washing step to wash a glass substrate; a pretreatment step to apply a pretreatment for molecular bonding to the glass substrate treated by the washing step; a heat treatment step to The glass substrate treated by the pretreatment step is subjected to heat treatment; the catalyst supply step is to supply a catalyst to the glass substrate treated by the heat treatment step; the catalyst activation step is to allow the catalyst to use the catalyst The glass substrate treated after the supply step is activated; and the electroless plating step is to apply electroless plating to the glass substrate treated by the catalyst activation step.
根據本發明,便能提供一種可使用分子接合技術來在玻璃基材形成鍍覆皮膜的鍍覆處理後之玻璃基材的製造方法及使用分子接合技術來形成鍍覆皮膜之玻璃基材。 According to the present invention, it is possible to provide a method of manufacturing a glass substrate after a plating process that can use a molecular bonding technique to form a plating film on a glass substrate, and a glass substrate that uses a molecular bonding technique to form a plating film.
10‧‧‧鍍覆處理後之玻璃基材 10‧‧‧Glass substrate after plating
12‧‧‧玻璃基材 12‧‧‧Glass substrate
13‧‧‧分子接合膜 13‧‧‧Molecular junction membrane
14、16‧‧‧金屬鍍覆皮膜 14, 16‧‧‧Metal plating film
圖1係顯示藉由本發明一實施形態相關之鍍覆處理後的玻璃基板之製造方法所製造出之玻璃的剖面之說明圖。 FIG. 1 is an explanatory view showing a cross section of glass manufactured by a method of manufacturing a glass substrate after plating according to an embodiment of the present invention.
圖2係顯示該鍍覆處理後的玻璃基材之製造方法工序的流程圖。 FIG. 2 is a flowchart showing the steps of the manufacturing method of the glass substrate after the plating process.
圖3係顯示該鍍覆處理後的玻璃基材之製造方法所包含之熱處理工序對剝離強度所造成之影響的圖表。 FIG. 3 is a graph showing the influence of the heat treatment step included in the manufacturing method of the glass substrate after the plating treatment on the peel strength.
接著,便參照添附圖式,就將本發明具體化之實施形態來加以說明,以供理解本發明。另外,圖式中,無關說明之部分會省略圖示。 Next, with reference to the attached drawings, the embodiment of the present invention will be described in order to understand the present invention. In addition, in the drawings, parts that are not related to description will be omitted.
本發明一實施形態相關之鍍覆後的玻璃基材10之製造方法如圖1所示,係可透過藉由分子接合所形成分子接合膜13,來在玻璃基板12形成金屬鍍覆皮膜14、16。
As shown in FIG. 1, a method for manufacturing a
亦即,鍍覆後的玻璃基材10之製造方法係可製造出鍍覆處理後之玻璃基材10,該鍍覆處理後之玻璃基材10係具備:玻璃基材12;分子接合膜13,係藉由分子接合來接合於玻璃基材12;以及金屬鍍覆層14,係藉由分子接合來接合於分子接合膜13。
That is, the method of manufacturing the
在此,本實施形態中之玻璃基材12係舉例如一般鈉玻璃(白板玻璃等)、硼矽酸玻璃、鉛玻璃、燧石系玻璃、光學玻璃、石英玻璃等。
Here, the
又,金屬鍍覆披覆膜係例如銅鍍覆、鎳鍍覆及金鍍覆之皮膜。其中,金屬鍍覆皮膜並不限於該等金屬鍍覆皮膜。 Moreover, the metal plating coating film is a coating film such as copper plating, nickel plating, and gold plating. However, the metal plating film is not limited to these metal plating films.
以下,便就鍍覆處理後的玻璃基材10之製造方法(玻璃基材之鍍覆方法)來加以說明。
Hereinafter, the manufacturing method of the
鍍覆處理後之玻璃基材如圖2所示,係依照下述工序Pa1~Pa7來加以製造。 The glass substrate after the plating process is manufactured as shown in FIG. 2 according to the following steps Pa1 to Pa7.
(洗淨工序Pa1) (Washing process Pa1)
本工序係洗淨玻璃基材12(參照圖1)之工序。 This step is a step of washing the glass substrate 12 (see FIG. 1).
具體而言,係以包含乙醇的溶劑來洗淨玻璃基材12,而乾燥。
Specifically, the
之後,便將玻璃基材12浸泡在酸性清潔劑,並以純水來沖洗,再乾燥。
After that, the
(前處理工序Pa2) (Pre-treatment process Pa2)
本工序係施予用以分子接合的前處理之工序。 This step is a step applied to the pretreatment for molecular bonding.
具體而言,係對以洗淨工序Pa1所洗淨後的玻璃基材12,反覆至少2次用以分子接合之前處理。此前處理係包含:將玻璃基材12浸泡在6-(3-氨基丙基三乙氧基矽烷)-1,3,5-三嗪-2,4-疊氮(以下,稱為「P-TES」。)溶液後進行乾燥之處理(P-TES處理);將紫外線照射至此乾燥後之玻璃基材12之處理;以及以乙醇來潤洗照射該紫外線後之玻璃基材12之處理。
Specifically, the
另外,分子接合劑並不限於P-TES,而可使用任何分子接合劑。 In addition, the molecular bonding agent is not limited to P-TES, and any molecular bonding agent may be used.
(熱處理工序Pa3) (Heat treatment process Pa3)
本工序係對以前處理工序Pa2而經前處理後之玻璃基材12,以預定之熱處理溫度及熱處裡時間來施予熱處理之工序。
This step is a step of applying heat treatment to the
熱處理溫度較佳地係80~250℃,熱處理時間較佳地係5~60分鐘。 The heat treatment temperature is preferably 80 to 250°C, and the heat treatment time is preferably 5 to 60 minutes.
(催化劑供給工序Pa4) (Catalyst supply process Pa4)
本工序係對以熱處理工序Pa3而經熱處理後之玻璃基材12,供給催化劑之工序。
This step is a step of supplying a catalyst to the
具體而言,係對玻璃基材12依序施予預浸泡處理及催化劑處理來供給催化劑(Pd)。催化劑液係如Cataposit44(羅門哈斯電子材料股份有限公司製)。
Specifically, the
(催化劑活化工序Pa5) (Catalyst activation process Pa5)
本工序係對以催化劑供給工序Pa4來供給催化劑後之玻璃基材12,施予促進液處理以去除Sn膠體,而活化催化劑之工序。
This step is a step of activating the catalyst by subjecting the
所使用之促進液係如19E(羅門哈斯電子材料股份有限公司製)。 The used promotion liquid is 19E (made by Rohm and Haas Electronic Materials Co., Ltd.).
(無電解鍍覆工序Pa6) (Electroless plating process Pa6)
本工序係對以催化劑活化工序Pa5來將催化劑活化後之玻璃基材12,施予無電解鍍覆之工序。
This step is a step of applying electroless plating to the
所適用之金屬鍍覆係如銅鍍覆及鎳鍍覆。 The applicable metal plating is copper plating and nickel plating.
藉由本無電解鍍覆工序Pa6所形成之金屬鍍覆皮膜14與玻璃基材12會藉由分子接合而透過分子接合膜13來強力接合。
The
(電解鍍覆工序Pa7) (Electrolytic plating process Pa7)
本工序係對以無電解鍍覆工序Pa6來形成金屬鍍覆皮膜14後之玻璃基材12施予電解鍍覆之工序。
This step is a step of applying electrolytic plating to the
所適用之金屬鍍覆係如銅鍍覆、鎳鍍覆及金鍍覆。 The applicable metal plating is copper plating, nickel plating and gold plating.
具體而言,係藉由在將玻璃基材浸泡在酸系清潔液後進行洗淨,來進行會抑制與鍍覆皮膜14之間所產生的密合不良之酸活化後,再以施予電解鍍覆來在金屬鍍覆皮膜14上進一步地形成金屬鍍覆皮膜16。
Specifically, by immersing the glass substrate in an acid-based cleaning solution and washing it, acid activation that suppresses the poor adhesion with the
另外,依據所要求的金屬鍍覆皮膜的模樣,而會有省略本電解鍍覆Pa7的情況。 In addition, depending on the required appearance of the metal plating film, the electrolytic plating Pa7 may be omitted.
(實施例) (Example)
接著,便顯示用以確認本實施形態相關之鍍覆處理後的玻璃基材10之製造方法的效果(亦即金屬鍍覆皮膜之剝離強度相關特性優異)的試驗例,並就鍍覆處理後的玻璃基材10之製造方法來進一步說明。
Next, a test example for confirming the effect of the manufacturing method of the
發明人係為了評估熱處理工序Pa3的有無對金屬鍍覆皮膜之剝離強度所造成的影響,而實施試驗。 The inventors conducted tests in order to evaluate the effect of the presence or absence of the heat treatment step Pa3 on the peel strength of the metal plating film.
首先,準備複數鈉系白板玻璃(載波片)來作為玻璃基材12。針對該等玻璃基材係依照上述工序Pa1~Pa7來進行金屬鍍覆。
First, a plurality of sodium-based white glass (carrier slides) are prepared as the
此時,熱處理工序Pa3中之熱處理溫度分別為80℃、110℃、150℃、200℃及250℃,而就各熱處理溫度來製作出熱處理時間為5分鐘、15分鐘、30分鐘及60分鐘的試料1~20。
At this time, the heat treatment temperatures in the heat treatment step Pa3 are 80°C, 110°C, 150°C, 200°C, and 250°C, respectively, and the heat treatment time is 5 minutes, 15 minutes, 30 minutes, and 60 minutes for each heat treatment temperature.
接著,作為試料R(比較例)係在上述鍍覆處理後之玻璃基材之製造方法工序Pa1~Pa7中省略熱處理工序Pa3來製作出鍍覆處理後之試料。 Next, as the sample R (comparative example), the heat treatment step Pa3 was omitted in the manufacturing method steps Pa1 to Pa7 of the glass substrate after the plating process described above to prepare a sample after the plating process.
玻璃基材12之尺寸(長度×寬度×厚度)係75mm×25mm×1.0mm。
The size (length×width×thickness) of the
分子接合劑係上述P-TES。 The molecular bonding agent is the aforementioned P-TES.
無電解鍍覆工序Pa6之金屬鍍覆係銅鍍覆。銅鍍覆之厚度為約0.3μm。 Electroless plating process Pa6 metal plating is copper plating. The thickness of the copper plating is about 0.3 μm.
電解鍍覆工序Pa7之金屬鍍覆係銅鍍覆。銅鍍覆之厚度為約18μm。 In the electrolytic plating process Pa7, the metal plating is copper plating. The thickness of the copper plating is about 18 μm.
關於各試料1~20及試料R在洗淨工序Pa1及前處理工序Pa2中之處理會於23±3℃的室溫下加以進行。
The treatment of each of
關於所製作出之試料1~20及試料R(比較例)係基於JIS Z 0237:2009來實施鍍覆皮膜之剝離試驗。另外,將測力計ZTA-50N(IMADA股份有限公司製)安裝在縱型電動測量台MX2-500N(IMADA股份有限公司製),來構成剝離試驗機。 About the prepared samples 1-20 and the sample R (comparative example), the peeling test of the plating film was implemented based on JIS Z 0237:2009. In addition, a dynamometer ZTA-50N (manufactured by IMADA Co., Ltd.) was mounted on a vertical electric measuring table MX2-500N (manufactured by IMADA Co., Ltd.) to constitute a peel tester.
於圖3顯示試料1~20及試料R的試驗結果。圖3之橫軸係熱處理時間,縱軸係剝離強度(N/cm)。 Figure 3 shows the test results of samples 1-20 and sample R. The horizontal axis of FIG. 3 is the heat treatment time, and the vertical axis is the peel strength (N/cm).
由試驗結果看來,便明瞭於實施熱處理工序Pa3時,會較未實施熱處理工序Pa3的情況要能提高鍍覆皮膜之剝離強度。 From the test results, it is understood that when the heat treatment step Pa3 is performed, the peel strength of the plating film can be improved compared to the case where the heat treatment step Pa3 is not performed.
另外,在以熱處理工序Pa3來加熱玻璃基板時之條件係熱處理溫度為80~250℃,熱處理時間為5~60分鐘。 In addition, the conditions when heating the glass substrate in the heat treatment step Pa3 are that the heat treatment temperature is 80 to 250° C. and the heat treatment time is 5 to 60 minutes.
如此般,根據本實施形態相關之鍍覆處理後的玻璃基材10之製造方法,便可藉由經過一連串工序,並使用分子接合技術來得到金屬鍍覆皮膜之剝離強度相關特性優異的玻璃基材10。
In this way, according to the manufacturing method of the
以上,雖已說明本發明實施形態,但本發明並不限於上述形態,未超出意旨之條件的變更等亦完全落在本發明適用範圍。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above-mentioned embodiments, and changes and the like that do not exceed the intended conditions also completely fall within the scope of application of the present invention.
Pa1‧‧‧洗淨工序 Pa1‧‧‧ washing process
Pa2‧‧‧前處理工序 Pa2‧‧‧Pretreatment process
Pa3‧‧‧熱處理工序 Pa3‧‧‧heat treatment process
Pa4‧‧‧催化劑供給工序 Pa4‧‧‧catalyst supply process
Pa5‧‧‧催化劑活化工序 Pa5‧‧‧catalyst activation process
Pa6‧‧‧無電解鍍覆工序 Pa6‧‧‧electroless plating process
Pa7‧‧‧電解鍍覆工序 Pa7‧‧‧electrolytic plating process
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Application Number | Priority Date | Filing Date | Title |
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JP2018-148916 | 2018-08-07 | ||
JP2018148916A JP6620277B1 (en) | 2018-08-07 | 2018-08-07 | Method for producing plated glass substrate |
Publications (1)
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JPS5952701B2 (en) * | 1977-09-05 | 1984-12-21 | ソニー株式会社 | Metsuki method |
JPS58133364A (en) * | 1982-02-02 | 1983-08-09 | Mitsubishi Rayon Co Ltd | Pretreating agent and method for chemical plating |
TW280837B (en) * | 1992-06-29 | 1996-07-11 | Philips Electronics Nv | |
JPH07102380A (en) * | 1993-09-30 | 1995-04-18 | Nisshinbo Ind Inc | Pretreatment for plating of glass fiber |
BE1007610A3 (en) * | 1993-10-11 | 1995-08-22 | Philips Electronics Nv | METHOD FOR ENERGIZE APPLYING A PATTERN ON METAL an electrically insulating substrate. |
JPH09263950A (en) * | 1996-03-28 | 1997-10-07 | Canon Inc | Chemical plating method for glass substrate |
CN1195099C (en) * | 1998-07-07 | 2005-03-30 | 株式会社日矿材料 | Pretreating agent for metal plating, and method for metal plating using same |
JP3601325B2 (en) * | 1998-11-26 | 2004-12-15 | 富士電機デバイステクノロジー株式会社 | Method of forming electroless Ni-P plating layer on glass substrate for magnetic disk |
JP2005213576A (en) * | 2004-01-29 | 2005-08-11 | Nikko Materials Co Ltd | Electroless plating pretreatment agent, electroless plating method using the same, and electroless plated object |
US20060093732A1 (en) * | 2004-10-29 | 2006-05-04 | David Schut | Ink-jet printing of coupling agents for trace or circuit deposition templating |
JP5302309B2 (en) * | 2008-06-16 | 2013-10-02 | 株式会社いおう化学研究所 | Laminated body and circuit wiring board |
US20110168430A1 (en) * | 2008-09-11 | 2011-07-14 | Takuya Hata | Method of forming metal wiring and electronic part including metal wiring |
JP4936344B1 (en) * | 2010-10-04 | 2012-05-23 | 邦夫 森 | Metal film forming method and product having metal film |
JP2015021167A (en) * | 2013-07-19 | 2015-02-02 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Electroless plating method |
JP2015089951A (en) * | 2013-11-05 | 2015-05-11 | キヤノン・コンポーネンツ株式会社 | Article with metallic film and production method thereof, and wiring board |
JP6383682B2 (en) * | 2015-02-26 | 2018-08-29 | 富士フイルム株式会社 | Organic electroluminescence device |
JP6764222B2 (en) * | 2015-07-28 | 2020-09-30 | 株式会社朝日Fr研究所 | Microchemical chips and their manufacturing methods |
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