TW202015119A - Metal removing device, substrate treating apparatus, and substrate treating method - Google Patents

Metal removing device, substrate treating apparatus, and substrate treating method Download PDF

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TW202015119A
TW202015119A TW108126813A TW108126813A TW202015119A TW 202015119 A TW202015119 A TW 202015119A TW 108126813 A TW108126813 A TW 108126813A TW 108126813 A TW108126813 A TW 108126813A TW 202015119 A TW202015119 A TW 202015119A
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processing liquid
piping
metal
removal device
magnetic field
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TW108126813A
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Chinese (zh)
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TWI717791B (en
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小林健司
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A metal removing device includes (200) removes metal (M) contained in a treatment liquid used for treating a substrate (W). The metal removing device (200) includes a magnetic field generating section (220) and a trapping section (210). The magnetic field generating section (220) causes a magnetic field to act on the treatment liquid supplied from a treatment liquid supply source. The trapping section captures the metal (M) moving in the treatment liquid under action of the magnetic field.

Description

金屬除去裝置、基板處理裝置及基板處理方法 Metal removal device, substrate processing device and substrate processing method

本發明係關於一種金屬除去裝置、基板處理裝置及基板處理方法。 The invention relates to a metal removal device, a substrate processing device and a substrate processing method.

於基板處理裝置中,對基板供給處理液而進行處理。若處理液內含有異物,則良率會變差,因此進行使用過濾器而將處理液中之異物除去的處理(例如,專利文獻1)。於專利文獻1之半導體基板洗淨裝置中,以過濾器吸附金屬雜質。 In the substrate processing apparatus, a processing liquid is supplied to the substrate and processed. If a foreign substance is contained in the treatment liquid, the yield will be deteriorated, and therefore a treatment is performed to remove the foreign substance in the treatment liquid using a filter (for example, Patent Document 1). In the semiconductor substrate cleaning device of Patent Document 1, a filter adsorbs metal impurities.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本專利特開平08-8223號公報 Patent Literature 1: Japanese Patent Laid-Open No. 08-8223

然而,於過濾器中,有可能無法除去處理液中含有之金屬。 However, in the filter, the metal contained in the treatment liquid may not be removed.

有鑑於上述課題,本發明之目的,在於提供一種金屬除去裝置、基板處理裝置及基板處理方法,其可除去處理液中之金屬。 In view of the above problems, an object of the present invention is to provide a metal removal device, a substrate processing device, and a substrate processing method, which can remove metals in a processing liquid.

本發明之金屬除去裝置係除去處理液中含有之金屬,該處理液係處理基板。金屬除去裝置,具備磁場產生部及捕集部。上述磁場產生部係使磁場作用於自處理液供給源供給之處理液。上述捕集部受到上述磁場之作用而捕捉移動於處理液中之上述金屬。 The metal removing device of the present invention removes the metal contained in the processing liquid, and the processing liquid treats the substrate. The metal removal device includes a magnetic field generation unit and a collection unit. The above-mentioned magnetic field generating unit applies a magnetic field to the processing liquid supplied from the processing liquid supply source. The trapping part is trapped by the magnetic field to trap the metal moving in the processing liquid.

於一實施形態中,金屬除去裝置進而具備配管。上述配管連接於上述處理液供給源。上述捕集部配置於上述配管。 In one embodiment, the metal removal device further includes piping. The piping is connected to the processing liquid supply source. The collecting part is arranged in the piping.

於一實施形態中,上述配管具有流通部。上述流通部係供上述處理液流通且與上述捕集部鄰接。上述捕集部中之上述處理液的流速係較上述流通部中之上述處理液的流速慢。 In one embodiment, the piping has a circulation part. The circulation unit is configured to circulate the processing liquid and is adjacent to the collection unit. The flow velocity of the treatment liquid in the collection section is slower than the flow velocity of the treatment liquid in the circulation section.

於一實施形態中,上述配管係由非磁性體材料形成。 In one embodiment, the piping system is formed of a non-magnetic material.

於一實施形態中,上述配管係由全氟烷氧基乙烯(perfluoroalkoxy ethylene)形成。 In one embodiment, the piping system is formed of perfluoroalkoxy ethylene.

於一實施形態中,上述捕集部係配置於上述配管之直徑變化之部位。 In one embodiment, the collecting portion is arranged at a location where the diameter of the piping changes.

於一實施形態中,上述配管進而具有彎曲之彎曲部。上述捕集部係配置於上述彎曲部。 In one embodiment, the piping further has a bent portion. The collecting part is arranged at the curved part.

於一實施形態中,於上述捕集部中,上述配管之內周面具有凹凸形狀。 In one embodiment, in the collection portion, the inner peripheral surface of the pipe has a concave-convex shape.

於一實施形態中,上述捕集部可自上述配管拆卸。或者,配置於上述配管之外周面之上述磁場產生部可拆卸。 In one embodiment, the collecting part can be detached from the piping. Alternatively, the magnetic field generating portion disposed on the outer peripheral surface of the piping may be detachable.

於一實施形態中,上述磁場產生部包含電磁鐵。上述磁場產生部可切換是否使磁場作用於上述處理液。 In one embodiment, the magnetic field generating section includes an electromagnet. The magnetic field generating unit can switch whether to apply a magnetic field to the processing liquid.

於一實施形態中,上述金屬除去裝置進而具備配管及處理液收容部。上述配管連接於上述處理液供給源。上述處理液收容部連接於上述配管。上述處理液收容部收容上述處理液。上述捕集部係配置於上述處理液收容部。 In one embodiment, the metal removal device further includes piping and a processing liquid storage unit. The piping is connected to the processing liquid supply source. The processing liquid storage unit is connected to the piping. The processing liquid storage unit stores the processing liquid. The collection unit is disposed in the processing liquid storage unit.

於一實施形態中,上述處理液係無極性或低極性。 In one embodiment, the treatment liquid system has no polarity or low polarity.

於一實施形態中,上述處理液包含異丙醇(isopropyl alcohol)。 In one embodiment, the treatment liquid contains isopropyl alcohol.

本發明之基板處理裝置具備上述記載之金屬除去裝置。上述基板處理裝置係藉由通過上述金屬除去裝置之上述處理液而處理上述基板。 The substrate processing apparatus of the present invention includes the metal removing apparatus described above. The substrate processing device processes the substrate by the processing liquid passing through the metal removal device.

本發明之基板處理方法係包含以下之步驟:自處理液供給源朝配管供給處理液之步驟;藉由利用磁場產生部產生之磁場而捕捉移動於上述處理液中之金屬,以除去上述處理液中含有之上述金屬之步驟;及藉由已除去上述金屬之上述處理液而處理基板之步驟。 The substrate processing method of the present invention includes the following steps: the step of supplying the processing liquid from the processing liquid supply source to the piping; the use of the magnetic field generated by the magnetic field generating section to capture the metal moving in the processing liquid to remove the processing liquid The step of the above-mentioned metal contained in; and the step of processing the substrate by the above-mentioned processing liquid from which the above-mentioned metal has been removed.

於一實施形態中,上述基板處理方法進而包含排出步驟,其藉由釋放已捕捉之金屬而進行排出。 In one embodiment, the above-mentioned substrate processing method further includes a discharging step, which discharges by releasing the captured metal.

根據本發明之金屬除去裝置,可除去處理液中之金屬。 According to the metal removal device of the present invention, the metal in the treatment liquid can be removed.

1‧‧‧處理單元 1‧‧‧Processing unit

2‧‧‧供給調節部 2‧‧‧Supply Regulation Department

4‧‧‧流體箱 4‧‧‧fluid tank

5‧‧‧處理液室 5‧‧‧Processing liquid chamber

10‧‧‧腔室 10‧‧‧ chamber

11‧‧‧旋轉夾頭 11‧‧‧Rotating chuck

12‧‧‧噴嘴 12‧‧‧ nozzle

13‧‧‧供給配管 13‧‧‧Supply piping

14‧‧‧噴嘴移動單元 14‧‧‧ Nozzle moving unit

16‧‧‧杯體 16‧‧‧Cup

19‧‧‧分歧配管 19‧‧‧Different piping

20‧‧‧閥 20‧‧‧Valve

21‧‧‧流量計 21‧‧‧Flowmeter

22‧‧‧流量調整閥 22‧‧‧Flow regulating valve

23‧‧‧閥 23‧‧‧Valve

51‧‧‧一次過濾器 51‧‧‧ Once filter

52‧‧‧一次過濾器 52‧‧‧One time filter

53~55、59、62、64、66、68‧‧‧閥 53~55, 59, 62, 64, 66, 68

56‧‧‧流量調整閥 56‧‧‧Flow regulating valve

57、58‧‧‧處理液槽 57、58‧‧‧Treatment liquid tank

60‧‧‧流量調整閥 60‧‧‧Flow regulating valve

61‧‧‧二次過濾器 61‧‧‧Secondary filter

63‧‧‧二次過濾器 63‧‧‧Secondary filter

65‧‧‧二次過濾器 65‧‧‧Secondary filter

67‧‧‧二次過濾器 67‧‧‧Secondary filter

70‧‧‧排液槽 70‧‧‧Drain tank

100‧‧‧基板處理裝置 100‧‧‧Substrate processing device

110‧‧‧夾頭構件 110‧‧‧Chuck components

111‧‧‧旋轉基座 111‧‧‧rotating base

112‧‧‧旋轉馬達 112‧‧‧rotating motor

200‧‧‧金屬除去裝置 200‧‧‧Metal removal device

210‧‧‧捕集部 210‧‧‧Capture Department

220、220a、220b‧‧‧磁場產生部 220, 220a, 220b

230、230a、230b、230c、230d、230e‧‧‧配管 230, 230a, 230b, 230c, 230d, 230e‧‧‧ piping

232‧‧‧外周面 232‧‧‧Perimeter

233‧‧‧內周面 233‧‧‧Inner peripheral surface

234‧‧‧流通部 234‧‧‧Circulation Department

235‧‧‧彎曲部 235‧‧‧Bend

240‧‧‧處理液供給源 240‧‧‧Process liquid supply source

250‧‧‧處理液收容部 250‧‧‧Processing liquid storage

A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis

A2‧‧‧轉動軸線 A2‧‧‧Rotation axis

CR‧‧‧中央機器人 CR‧‧‧Central Robot

d1、d2‧‧‧配管之直徑 d1, d2‧‧‧Pipe diameter

H‧‧‧磁場 H‧‧‧Magnetic field

IR‧‧‧索引機器人 IR‧‧‧ Index Robot

L1、L2‧‧‧資料 L1, L2‧‧‧ data

LP‧‧‧裝載埠 LP‧‧‧Loading port

M‧‧‧金屬 M‧‧‧Metal

TW‧‧‧塔架 TW‧‧‧Tower

W‧‧‧基板 W‧‧‧Substrate

圖1為顯示基板處理裝置之圖。 FIG. 1 is a diagram showing a substrate processing apparatus.

圖2(a)及(b)為顯示金屬除去裝置之示意性剖視圖。 2(a) and (b) are schematic cross-sectional views showing a metal removing device.

圖3為顯示本發明之實施形態中之金屬除去裝置之金屬的捕捉結果之圖。 FIG. 3 is a diagram showing the result of metal trapping in the metal removing device in the embodiment of the present invention.

圖4為顯示金屬除去裝置之示意性剖視圖。 4 is a schematic cross-sectional view showing a metal removing device.

圖5(a)至(d)為顯示金屬除去裝置之示意性剖視圖。 5(a) to (d) are schematic cross-sectional views showing a metal removing device.

圖6為顯示金屬除去裝置之示意性剖視圖。 6 is a schematic cross-sectional view showing a metal removing device.

圖7為顯示基板處理裝置之俯視圖。 7 is a plan view showing a substrate processing apparatus.

圖8為顯示基板處理裝置之配管之圖。 8 is a diagram showing piping of a substrate processing apparatus.

圖9為顯示處理液室之配管之圖。 9 is a diagram showing the piping of the processing liquid chamber.

以下,參照圖式,對本發明之實施形態進行說明。再者,圖中,對於相同或相當之部分,賦予相同之參照符號而不重複說明。此外,於本發明之實施形態中,X軸、Y軸及Z軸相互正交,且X軸及Y軸與水平方向平行,Z軸與鉛垂方向平行。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are given the same reference symbols without repeating the description. In addition, in the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

<實施形態1> <Embodiment 1>

參照圖1,對本發明之實施形態之基板處理裝置100進行說明。首先,參照圖1而說明基板處理裝置100。圖1為顯示基板處理裝置100之圖。如圖1所示,基板處理裝置100係藉由處理液而處理基板W。具體而言,基板處理裝置100係一片一片地處理基板W之單片型。基板W為大致圓板狀。 1, a substrate processing apparatus 100 according to an embodiment of the present invention will be described. First, the substrate processing apparatus 100 will be described with reference to FIG. 1. FIG. 1 is a diagram showing a substrate processing apparatus 100. As shown in FIG. 1, the substrate processing apparatus 100 processes the substrate W with a processing liquid. Specifically, the substrate processing apparatus 100 is a monolithic type that processes the substrate W piece by piece. The substrate W is substantially disc-shaped.

基板處理裝置100具備處理單元1、供給調節部2及金屬除去裝置200。 The substrate processing apparatus 100 includes a processing unit 1, a supply regulator 2, and a metal removal device 200.

處理單元1係朝基板W吐出處理液,以處理基板W。具體而言,處理單元1包含腔室10、旋轉夾頭11、噴嘴12、供給 配管13、噴嘴移動單元14及杯體16。 The processing unit 1 discharges the processing liquid toward the substrate W to process the substrate W. Specifically, the processing unit 1 includes a chamber 10, a rotating chuck 11, a nozzle 12, and a supply Piping 13, nozzle moving unit 14 and cup 16.

腔室10具有大致箱型形狀。腔室10係收容基板W、旋轉夾頭11、噴嘴12、供給配管13之一部分、噴嘴移動單元14及杯體16。旋轉夾頭11係保持基板W而進行旋轉。具體而言,旋轉夾頭11係於腔室10內一面水平地保持基板W一面使基板W繞旋轉軸線A1旋轉。 The chamber 10 has a substantially box shape. The chamber 10 houses the substrate W, the rotating chuck 11, the nozzle 12, a part of the supply pipe 13, the nozzle moving unit 14 and the cup 16. The rotary chuck 11 rotates while holding the substrate W. Specifically, the rotary chuck 11 rotates the substrate W about the rotation axis A1 while holding the substrate W horizontally in the chamber 10.

旋轉夾頭11包含複數個夾頭構件110、旋轉基座111及旋轉馬達112。複數個夾頭構件110係以水平之姿勢保持基板W。旋轉基座111係大致圓板狀,且以水平之姿勢支撐複數個夾頭構件110。旋轉馬達112藉由使旋轉基座111旋轉,而使保持於複數個夾頭構件110之基板W繞旋轉軸線A1旋轉。 The rotating chuck 11 includes a plurality of chuck members 110, a rotating base 111, and a rotating motor 112. The plurality of chuck members 110 hold the substrate W in a horizontal posture. The rotating base 111 is substantially disc-shaped, and supports a plurality of chuck members 110 in a horizontal posture. The rotation motor 112 rotates the rotation base 111 to rotate the substrate W held by the plurality of chuck members 110 around the rotation axis A1.

噴嘴12係朝向基板W吐出處理液。處理液例如為無極性或低極性。處理液例如包含異丙醇(isopropyl alcohol:IPA)。 The nozzle 12 discharges the processing liquid toward the substrate W. The treatment liquid is, for example, non-polar or low-polar. The treatment liquid contains, for example, isopropyl alcohol (IPA).

供給配管13連接於噴嘴12。供給配管13朝噴嘴12供給處理液。 The supply pipe 13 is connected to the nozzle 12. The supply pipe 13 supplies the processing liquid toward the nozzle 12.

供給調節部2調節處理液朝噴嘴12之供給量。供給調節部2係於腔室10之外部配置於供給配管13上。再者,供給調節部2也可於腔室10之內部配置於供給配管13上。 The supply adjustment unit 2 adjusts the supply amount of the processing liquid toward the nozzle 12. The supply regulator 2 is arranged on the supply pipe 13 outside the chamber 10. In addition, the supply regulator 2 may be disposed on the supply pipe 13 inside the chamber 10.

具體而言,供給調節部2將處理液朝噴嘴12之供給量設為零,即停止朝噴嘴12供給處理液。供給調節部2將處理液朝噴嘴12之供給量設為大於零,則朝噴嘴12供給處理液。供給調節部2係調節朝噴嘴12供給之處理液之流量。 Specifically, the supply regulator 2 sets the supply amount of the processing liquid to the nozzle 12 to zero, that is, stops the supply of the processing liquid to the nozzle 12. The supply regulator 2 sets the supply amount of the processing liquid to the nozzle 12 to be greater than zero, and then supplies the processing liquid to the nozzle 12. The supply regulator 2 regulates the flow rate of the processing liquid supplied to the nozzle 12.

更具體而言,供給調節部2包含閥20、流量計21、及流量調整閥22。處理液之對噴嘴12之供給開始及供給停止係藉 由閥20所切換。具體而言,閥20係一開閉閥,而可切換為開放狀態及關閉狀態。開放狀態係指使朝向噴嘴12而流動於供給配管13內之處理液通過之狀態。關閉狀態係指停止自供給配管13朝噴嘴12供給處理液之狀態。 More specifically, the supply regulator 2 includes a valve 20, a flow meter 21, and a flow rate adjustment valve 22. The start and stop of the supply of the processing liquid to the nozzle 12 are borrowed Switched by the valve 20. Specifically, the valve 20 is an on-off valve, and can be switched between an open state and a closed state. The open state refers to a state where the processing liquid flowing into the supply pipe 13 toward the nozzle 12 passes. The closed state refers to a state where the supply of the processing liquid from the supply pipe 13 to the nozzle 12 is stopped.

流量計21檢測被供給至噴嘴12之處理液之流量。流量調整閥22調整被供給至噴嘴12之處理液之流量。若閥20成為開放狀態,則處理液以與流量調整閥22之開度對應之流量自供給配管13被供給至噴嘴12。其結果,自噴嘴12吐出處理液。開度顯示流量調整閥22開放之程度。 The flow meter 21 detects the flow rate of the processing liquid supplied to the nozzle 12. The flow rate adjustment valve 22 adjusts the flow rate of the processing liquid supplied to the nozzle 12. When the valve 20 is in an open state, the processing liquid is supplied from the supply pipe 13 to the nozzle 12 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 22. As a result, the processing liquid is discharged from the nozzle 12. The opening degree indicates the opening degree of the flow regulating valve 22.

杯體16具有大致筒狀。杯體16承接自基板W排出之處理液。 The cup 16 has a substantially cylindrical shape. The cup 16 receives the processing liquid discharged from the substrate W.

噴嘴移動單元14係繞轉動軸線A2轉動,使噴嘴12水平地移動。具體而言,噴嘴移動單元14係使噴嘴12於噴嘴12之處理位置與待機位置之間水平地移動。處理位置表示基板W上方之位置。待機位置表示較旋轉夾頭11及杯體16靠外側之位置。此外,噴嘴移動單元14也可使噴嘴12鉛垂地移動。 The nozzle moving unit 14 rotates around the axis of rotation A2 to move the nozzle 12 horizontally. Specifically, the nozzle moving unit 14 moves the nozzle 12 horizontally between the processing position and the standby position of the nozzle 12. The processing position indicates the position above the substrate W. The standby position indicates a position outside the rotating chuck 11 and the cup 16. In addition, the nozzle moving unit 14 can also vertically move the nozzle 12.

金屬除去裝置200除去處理基板W之處理液中含有之金屬。基板處理裝置100利用通過金屬除去裝置200後之處理液而處理基板W。 The metal removing device 200 removes the metal contained in the processing liquid for processing the substrate W. The substrate processing apparatus 100 processes the substrate W using the processing liquid after passing through the metal removing apparatus 200.

參照圖2(a)及圖2(b),對本發明之實施形態中之金屬除去裝置200進行說明。圖2(a)及圖2(b)為顯示金屬除去裝置200之示意性剖視圖。 2 (a) and 2 (b), the metal removal device 200 in the embodiment of the present invention will be described. 2(a) and 2(b) are schematic cross-sectional views showing the metal removing device 200. FIG.

如圖2(a)及圖2(b)所示,金屬除去裝置200具備捕集部210、磁場產生部220及配管230。 As shown in FIGS. 2( a) and 2 (b ), the metal removal device 200 includes a trap 210, a magnetic field generator 220 and a pipe 230.

配管230係供處理基板W之處理液流通。其中,處理液係於配管230內自圖之左側朝右側流動。亦即,圖之左側為上游側,圖之右側為下游側。處理液之流速例如為0.64m/秒。處理液內含有作為雜質之金屬M。金屬例如為鋁、鉻、鐵及鋅。金屬除去裝置200除去處理液中含有之金屬。配管230連接於處理液供給源。配管230具有供處理液流通之流通部234。流通部234係與捕集部210鄰接。配管230例如由非磁性體材料形成。詳細而言,配管230例如由全氟烷氧基乙烯形成。 The piping 230 is for circulating the processing liquid for processing the substrate W. The processing liquid flows in the piping 230 from the left side to the right side in the figure. That is, the left side of the figure is the upstream side, and the right side of the figure is the downstream side. The flow rate of the treatment liquid is, for example, 0.64 m/sec. The treatment liquid contains metal M as an impurity. The metal is, for example, aluminum, chromium, iron, and zinc. The metal removal device 200 removes the metal contained in the processing liquid. The piping 230 is connected to the processing liquid supply source. The piping 230 has a circulation part 234 through which the processing liquid circulates. The circulation unit 234 is adjacent to the collection unit 210. The piping 230 is formed of a non-magnetic material, for example. In detail, the piping 230 is formed of, for example, perfluoroalkoxyethylene.

磁場產生部220例如為釹磁鐵。磁場產生部220a為N極之磁鐵。磁場產生部220b為S極之磁鐵。磁場產生部220例如安裝於配管230之外周面232。詳細而言,磁場產生部220a與磁場產生部220b係以藉由磁場產生部220a與磁場產生部220b夾持配管230之方式安裝於配管230之外周面232。因此,磁場產生部220係使磁場H作用於捕集部210內之處理液。磁通密度例如為200mT。再者,磁場產生部220也可為電磁鐵。於磁場產生部220為電磁鐵之情況下,可容易切換是否使磁場H作用於處理液。 The magnetic field generating unit 220 is, for example, a neodymium magnet. The magnetic field generator 220a is an N-pole magnet. The magnetic field generating part 220b is a magnet of S pole. The magnetic field generator 220 is attached to the outer peripheral surface 232 of the pipe 230, for example. In detail, the magnetic field generation part 220a and the magnetic field generation part 220b are attached to the outer peripheral surface 232 of the pipe 230 so that the pipe 230 is sandwiched between the magnetic field generation part 220a and the magnetic field generation part 220b. Therefore, the magnetic field generation unit 220 causes the magnetic field H to act on the processing liquid in the collection unit 210. The magnetic flux density is, for example, 200 mT. Furthermore, the magnetic field generating unit 220 may be an electromagnet. When the magnetic field generator 220 is an electromagnet, it can be easily switched whether the magnetic field H acts on the processing liquid.

捕集部210係配置於配管230。具體而言,捕集部210構成配管230之一部分。詳細而言,捕集部210表示配管230中的配置有磁場產生部220之部分。捕集部210內係供自處理液供給源供給之處理液流通。如圖2(a)所示,處理液中含有之金屬M係因磁場H而朝向捕集部210移動。因此,如圖2(b)所示,捕集部210受到磁場H之作用而捕捉移動於處理液中之金屬M。 The collection unit 210 is arranged in the piping 230. Specifically, the collecting part 210 constitutes a part of the piping 230. In detail, the collection part 210 represents the part of the piping 230 where the magnetic field generation part 220 is arranged. In the collection part 210, the processing liquid supplied from the processing liquid supply source is circulated. As shown in FIG. 2( a ), the metal M contained in the processing liquid moves toward the trap 210 due to the magnetic field H. Therefore, as shown in FIG. 2( b ), the collector 210 receives the action of the magnetic field H to capture the metal M moving in the processing liquid.

接著,對本發明之實施形態之基板處理方法進行說明。基板處理方法包含供給步驟、除去步驟及處理步驟。於供給步 驟中,如圖2(a)所示,自處理液供給源朝配管230供給處理液。於除去步驟中,如圖2(b)所示,藉由利用磁場產生部220產生之磁場,捕捉移動於處理液中之金屬,以除去處理液中含有之金屬。於處理步驟中,藉由除去金屬後之處理液而處理基板W。根據本發明之實施形態之基板處理方法,可藉由除去金屬之處理液而處理基板W。因此,可提高良率。此外,較佳為,基板處理方法進而包含排出步驟。於排出步驟中,藉由釋放捕捉之金屬而進行排出。關於金屬之排出,容待後續參照圖8及圖9進行說明。 Next, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method includes a supply step, a removal step, and a processing step. Supply step In the step, as shown in FIG. 2(a), the processing liquid is supplied from the processing liquid supply source to the piping 230. In the removal step, as shown in FIG. 2(b), the metal generated in the processing liquid is captured by the magnetic field generated by the magnetic field generating unit 220 to remove the metal contained in the processing liquid. In the processing step, the substrate W is processed by the processing liquid after removing the metal. According to the substrate processing method of the embodiment of the present invention, the substrate W can be processed by the metal removal processing liquid. Therefore, the yield can be improved. In addition, preferably, the substrate processing method further includes a discharge step. In the discharging step, discharging is performed by releasing the captured metal. The discharge of metal will be described later with reference to FIGS. 8 and 9.

參照圖3,對本發明之實施形態中之金屬除去裝置之金屬的捕捉結果進行說明。圖3為顯示本發明之實施形態中之金屬除去裝置之金屬的捕捉結果之圖。於圖3中,橫軸顯示處理液中含有之金屬。於圖3中,縱軸顯示處理液中含有之金屬的量。縱軸之單位為E10 atomos/cm2。於圖3中,資料L1顯示不於配管設置磁場產生部之情況的資料。於圖3中,資料L2顯示於配管230設置磁場產生部220之情況的資料。作為測定條件,處理液為IPA,磁通密度為200mT,處理液之流速為0.64m/秒,配管230之直徑為10mm。 With reference to Fig. 3, the metal trapping result of the metal removing device in the embodiment of the present invention will be described. FIG. 3 is a diagram showing the result of metal trapping in the metal removing device in the embodiment of the present invention. In FIG. 3, the horizontal axis shows the metal contained in the treatment liquid. In FIG. 3, the vertical axis shows the amount of metal contained in the treatment liquid. The unit of the vertical axis is E10 atomos/cm 2 . In FIG. 3, the data L1 shows data in a case where the magnetic field generating part is not provided in the piping. In FIG. 3, the data L2 shows the data in the case where the magnetic field generating unit 220 is provided in the piping 230. As measurement conditions, the treatment liquid is IPA, the magnetic flux density is 200 mT, the flow rate of the treatment liquid is 0.64 m/sec, and the diameter of the pipe 230 is 10 mm.

如圖3所示,與資料L1比較,可確認到資料L2中處理液含有之金屬的量減少。尤其是,可以確認鋁(Al)、鉻(Cr)、鐵(Fe)及鋅(Zn)減少。雖然鋁作為磁性體而磁性弱,但確認到自處理液中除去鋁之情形。這是因為鋁與磁性強之鐵一起結成塊,與鐵一起藉由捕集部210而被捕捉。 As shown in FIG. 3, compared with the data L1, it can be confirmed that the amount of metal contained in the processing liquid in the data L2 is reduced. In particular, it was confirmed that aluminum (Al), chromium (Cr), iron (Fe), and zinc (Zn) decreased. Although aluminum is weak as a magnetic substance, it was confirmed that aluminum was removed from the treatment liquid. This is because aluminum agglomerates with strong magnetic iron and is captured by the trapping unit 210 together with iron.

以上,如參照圖1~圖3所作之說明,捕集部210受到磁場H之作用而捕捉移動於處理液中之金屬。因此,可除去處理 液中之金屬。其結果,可提高處理液之純度,進而可提高良率。 As described above with reference to FIGS. 1 to 3, the trapping section 210 receives the action of the magnetic field H to trap the metal moving in the processing liquid. Therefore, the processing can be removed Metal in the liquid. As a result, the purity of the treatment liquid can be improved, and further the yield can be improved.

此外,捕集部210配置於配管230。因此,可除去流動於配管230內之處理液中之金屬。其結果,可提高處理液之純度,可提高良率。 In addition, the collection unit 210 is arranged in the piping 230. Therefore, the metal in the processing liquid flowing in the piping 230 can be removed. As a result, the purity of the treatment liquid can be improved, and the yield can be improved.

此外,配管230係由非磁性體材料形成。因此,不會妨礙磁場產生部220將磁場作用於捕集部210內之處理液。因此,磁場產生部220可使磁場作用於捕集部210內之處理液。其結果,捕集部210可藉由磁場H而捕捉移動於處理液中之金屬。 In addition, the piping 230 is formed of a non-magnetic material. Therefore, it does not prevent the magnetic field generation unit 220 from applying the magnetic field to the processing liquid in the collection unit 210. Therefore, the magnetic field generation unit 220 can cause the magnetic field to act on the processing liquid in the collection unit 210. As a result, the collecting part 210 can capture the metal moving in the processing liquid by the magnetic field H.

此外,處理液係無極性或低極性。因此,磁場產生部220可使磁場作用於捕集部210內之處理液。其結果,可捕捉在離子交換方式之過濾器中無法除去之處理液中的金屬。 In addition, the treatment liquid system has no polarity or low polarity. Therefore, the magnetic field generation unit 220 can cause the magnetic field to act on the processing liquid in the collection unit 210. As a result, metals in the treatment liquid that cannot be removed by the ion exchange filter can be captured.

<實施形態2> <Embodiment 2>

於參照圖1~圖3說明之金屬除去裝置200中,捕集部210配置於配管230,但捕集部210也可配置於處理液收容部250。 In the metal removal device 200 described with reference to FIGS. 1 to 3, the collection unit 210 is disposed in the piping 230, but the collection unit 210 may be disposed in the processing liquid storage unit 250.

參照圖4,對本發明之實施形態2之金屬除去裝置200進行說明。圖4為顯示金屬除去裝置200之示意性剖視圖。實施形態2之金屬除去裝置200主要於捕集部210被配置於處理液收容部250之點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態2與實施形態1之不同點進行說明。 4, a metal removal device 200 according to Embodiment 2 of the present invention will be described. FIG. 4 is a schematic cross-sectional view showing the metal removing device 200. The metal removal device 200 of the second embodiment differs from the metal removal device 200 of the first embodiment mainly in that the trapping unit 210 is arranged in the processing liquid storage unit 250. The differences between Embodiment 2 and Embodiment 1 will be mainly described below.

如圖4所示,金屬除去裝置200除了具備捕集部210、磁場產生部220、及配管230外,還具備處理液供給源240及處理液收容部250。 As shown in FIG. 4, the metal removal device 200 includes a processing liquid supply source 240 and a processing liquid storage part 250 in addition to the trap part 210, the magnetic field generation part 220, and the piping 230.

磁場產生部220,安裝於處理液收容部250之外周面。 The magnetic field generating unit 220 is attached to the outer peripheral surface of the processing liquid storage unit 250.

配管230連接於處理液供給源240。 The piping 230 is connected to the processing liquid supply source 240.

處理液供給源240經由配管230朝處理液收容部250供給處理液。處理液供給源240例如為槽。 The processing liquid supply source 240 supplies the processing liquid to the processing liquid accommodating portion 250 via the piping 230. The processing liquid supply source 240 is, for example, a tank.

處理液收容部250連接於配管230。處理液收容部250係收容處理液。處理液收容部250例如為較處理液供給源240小之槽。處理液收容部250中之處理液之流速接近於零。 The processing liquid storage unit 250 is connected to the piping 230. The processing liquid accommodating unit 250 stores the processing liquid. The processing liquid storage unit 250 is, for example, a tank smaller than the processing liquid supply source 240. The flow rate of the processing liquid in the processing liquid storage section 250 is close to zero.

捕集部210配置於處理液收容部250。處理液收容部250中之處理液之流速接近於零。因此,捕集部210容易藉由磁場H而捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。 The collection unit 210 is disposed in the processing liquid storage unit 250. The flow rate of the processing liquid in the processing liquid storage section 250 is close to zero. Therefore, the collection unit 210 easily captures the metal moving in the processing liquid by the magnetic field H. As a result, the metal in the treatment liquid can be removed.

<實施形態3> <Embodiment 3>

於參照圖1~圖3說明之金屬除去裝置200中,捕集部210配置於配管230之直線狀之部分上,但捕集部210也可配置於配管230之直線狀之部分以外。 In the metal removal device 200 described with reference to FIGS. 1 to 3, the collecting part 210 is arranged on the linear part of the pipe 230, but the collecting part 210 may be arranged other than the linear part of the pipe 230.

參照圖5(a)~(d),對本發明之實施形態3之金屬除去裝置200進行說明。圖5(a)~(d)為顯示金屬除去裝置200之示意性剖視圖。實施形態3之金屬除去裝置200主要於捕集部210被配置於配管230之直線狀之部分以外的點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態3與實施形態1之不同點進行說明。再者,於圖5(a)~圖5(d)中,為了簡化圖式,省略磁場產生部220。 5 (a) to (d), a metal removal device 200 according to Embodiment 3 of the present invention will be described. 5(a) to (d) are schematic cross-sectional views showing the metal removing device 200. FIG. The metal removal device 200 of the third embodiment differs from the metal removal device 200 of the first embodiment mainly in that the collecting portion 210 is arranged at a point other than the linear portion of the pipe 230. The differences between Embodiment 3 and Embodiment 1 will be mainly described below. In addition, in FIGS. 5( a) to 5 (d ), in order to simplify the diagram, the magnetic field generating unit 220 is omitted.

如圖5(a)所示,配管230之直徑係自d1增大為d2。捕集部210配置於配管230之直徑變化之部位。於配管230之直徑變化之部位,處理液之流速降低。亦即,捕集部210中之處理液之 流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。 As shown in FIG. 5(a), the diameter of the piping 230 increases from d1 to d2. The collecting part 210 is arranged at a position where the diameter of the pipe 230 changes. At the position where the diameter of the piping 230 changes, the flow rate of the treatment liquid decreases. That is, the The flow rate is slower than the flow rate of the processing liquid in the circulation section 234. Therefore, the collecting part 210 easily captures the metal moving in the processing liquid by the magnetic field H.

如圖5(b)所示,配管230具有彎曲部235。彎曲部235係配管230彎曲之部位。捕集部210配置於彎曲部235。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。 As shown in FIG. 5( b ), the piping 230 has a bent portion 235. The bent portion 235 is where the piping 230 bends. The collection part 210 is arranged in the curved part 235. In the bent portion 235, the flow rate of the processing liquid is reduced due to pressure loss. That is, the flow rate of the processing liquid in the collection part 210 is slower than the flow rate of the processing liquid in the circulation part 234. Therefore, the collecting part 210 easily captures the metal moving in the processing liquid by the magnetic field H. As a result, the metal in the treatment liquid can be removed.

如圖5(c)所示,配管230具有彎曲部235。彎曲部235係配管230彎曲之部位。於彎曲部235中,配管230凹陷。捕集部210配置於彎曲部235。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。 As shown in FIG. 5(c), the piping 230 has a bent portion 235. The bent portion 235 is where the piping 230 bends. In the bent portion 235, the piping 230 is recessed. The collection part 210 is arranged in the curved part 235. In the bent portion 235, the flow rate of the processing liquid is reduced due to pressure loss. That is, the flow rate of the processing liquid in the collection part 210 is slower than the flow rate of the processing liquid in the circulation part 234. Therefore, the collecting part 210 easily captures the metal moving in the processing liquid by the magnetic field H. As a result, the metal in the treatment liquid can be removed.

如圖5(d)所示,配管230具有複數個彎曲部235。彎曲部235係配管230彎曲之部位。捕集部210配置於複數個彎曲部235之各者上。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速,較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。 As shown in FIG. 5(d), the piping 230 has a plurality of bent portions 235. The bent portion 235 is where the piping 230 bends. The collecting part 210 is arranged on each of the plural bending parts 235. In the bent portion 235, the flow rate of the processing liquid is reduced due to pressure loss. That is, the flow rate of the processing liquid in the collection part 210 is slower than the flow rate of the processing liquid in the circulation part 234. Therefore, the collecting part 210 easily captures the metal moving in the processing liquid by the magnetic field H. As a result, the metal in the treatment liquid can be removed.

<實施形態4> <Embodiment 4>

再者,配管230之內周面233也可具有凹凸形狀。 Furthermore, the inner peripheral surface 233 of the piping 230 may have a concave-convex shape.

參照圖6,對本發明之實施形態4之金屬除去裝置200 進行說明。圖6為顯示金屬除去裝置200之示意性剖視圖。實施形態4之金屬除去裝置200主要於配管230之內周面233具有凹凸形狀之點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態4與實施形態1之不同點進行說明。 Referring to FIG. 6, a metal removal device 200 according to Embodiment 4 of the present invention Be explained. FIG. 6 is a schematic cross-sectional view showing the metal removing device 200. The metal removal device 200 of the fourth embodiment differs from the metal removal device 200 of the first embodiment mainly in that the inner peripheral surface 233 of the pipe 230 has a concave-convex shape. The differences between Embodiment 4 and Embodiment 1 are mainly explained below.

如圖6所示,於捕集部210中,配管230之內周面233具有凹凸形狀。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。 As shown in FIG. 6, in the collection part 210, the inner peripheral surface 233 of the pipe 230 has a concave-convex shape. Therefore, the collecting part 210 easily captures the metal moving in the processing liquid by the magnetic field H. As a result, the metal in the treatment liquid can be removed.

<實施形態5> <Embodiment 5>

參照圖7~圖9,對本發明之實施形態5之基板處理裝置100進行說明。實施形態5係於具備複數個處理單元1之點上與實施形態1不同。以下,主要對實施形態5與實施形態1之不同點進行說明。 The substrate processing apparatus 100 according to Embodiment 5 of the present invention will be described with reference to FIGS. 7 to 9. Embodiment 5 is different from Embodiment 1 in that it has a plurality of processing units 1. The differences between Embodiment 5 and Embodiment 1 will be mainly described below.

首先,參照圖7,對基板處理裝置100進行說明。圖7為顯示基板處理裝置100之俯視圖。如圖7所示,基板處理裝置100具備複數個裝載埠LP、索引機器人IR、中央機器人CR、複數個處理單元1、複數個流體箱4及處理液室5。 First, referring to FIG. 7, the substrate processing apparatus 100 will be described. 7 is a plan view showing the substrate processing apparatus 100. As shown in FIG. 7, the substrate processing apparatus 100 includes a plurality of loading ports LP, an index robot IR, a central robot CR, a plurality of processing units 1, a plurality of fluid tanks 4, and a processing liquid chamber 5.

各裝載埠LP係積層收容複數片之基板W。索引機器人IR係於裝載埠LP與中央機器人CR之間搬送基板W。中央機器人CR係於索引機器人IR與處理單元1之間搬送基板W。各處理單元1係朝基板W吐出處理液,以處理基板W。各流體箱4收容流體機器。處理液室5收容處理液。 Each loading port LP is stacked to accommodate a plurality of substrates W. The indexing robot IR transfers the substrate W between the loading port LP and the central robot CR. The central robot CR transfers the substrate W between the index robot IR and the processing unit 1. Each processing unit 1 discharges a processing liquid toward the substrate W to process the substrate W. Each fluid tank 4 contains a fluid machine. The processing liquid chamber 5 contains the processing liquid.

具體而言,複數個處理單元1形成以俯視時圍繞中央機器人CR之方式配置的複數個塔架TW(實施形態5中為4個塔架 TW)。各塔架TW包含上下積層之複數個處理單元1(實施形態5中為3個處理單元1)。複數個流體箱4分別與複數個塔架TW對應。處理液室5內之處理液經由任一之流體箱4而供給於與流體箱4對應之塔架TW所包含之所有處理單元1。 Specifically, the plurality of processing units 1 form a plurality of towers TW arranged in a plan view around the central robot CR (four towers in Embodiment 5) TW). Each tower TW includes a plurality of processing units 1 stacked up and down (three processing units 1 in Embodiment 5). The plurality of fluid tanks 4 respectively correspond to the plurality of towers TW. The processing liquid in the processing liquid chamber 5 is supplied to all the processing units 1 included in the tower TW corresponding to the fluid tank 4 through any fluid tank 4.

此外,於實施形態5中,基板處理裝置100係於每一腔室10具備旋轉夾頭11、噴嘴12及供給調節部2。各腔室10收容旋轉夾頭11、噴嘴12及供給調節部2。 In addition, in the fifth embodiment, the substrate processing apparatus 100 is provided with the rotary chuck 11, the nozzle 12, and the supply regulator 2 in each chamber 10. Each chamber 10 accommodates the rotary chuck 11, the nozzle 12, and the supply regulator 2.

其次,參照圖8及圖9,對朝噴嘴12之處理液之供給進行說明。圖8為顯示基板處理裝置100之配管之圖。圖9為顯示處理液室5之配管之圖。如圖8所示,基板處理裝置100係於各塔架TW上,按每個處理單元1而具備供給配管13、分歧配管19、供給調節部2及閥23。供給調節部2被收容於與塔架TW對應之流體箱4。各供給配管13之一部分被收容於腔室10,各供給配管13之另一部分被收容於流體箱4。分歧配管19顯示自供給配管13分歧之配管。分歧配管19經由閥23而與處理液室5之排液槽70(圖9)連接。藉由開閉閥23,控制是否排出分歧配管19內之處理液。例如,藉由將閥23設為開放狀態,將分歧配管19內之處理液排出至排液槽70。 Next, the supply of the processing liquid to the nozzle 12 will be described with reference to FIGS. 8 and 9. FIG. 8 is a diagram showing the piping of the substrate processing apparatus 100. FIG. 9 is a diagram showing the piping of the processing liquid chamber 5. As shown in FIG. 8, the substrate processing apparatus 100 is attached to each tower TW, and includes a supply pipe 13, a branch pipe 19, a supply regulator 2, and a valve 23 for each processing unit 1. The supply regulator 2 is housed in the fluid tank 4 corresponding to the tower TW. One part of each supply pipe 13 is accommodated in the chamber 10, and the other part of each supply pipe 13 is accommodated in the fluid tank 4. The divergent piping 19 shows the diverging piping from the supply piping 13. The branch piping 19 is connected to the drain tank 70 (FIG. 9) of the processing liquid chamber 5 via the valve 23. By opening and closing the valve 23, it is controlled whether the processing liquid in the branch piping 19 is discharged. For example, by opening the valve 23, the processing liquid in the branch piping 19 is discharged to the drain tank 70.

如圖9所示,處理液室5具有複數個一次過濾器、複數個二次過濾器、複數個閥、複數個流量調整閥、複數個處理液槽、複數個配管、及排液槽70。複數個一次過濾器包含一次過濾器51、及一次過濾器52。複數個二次過濾器包含二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67。複數個閥包含閥53、閥54、閥55、閥59、閥62、閥64、閥66、閥68。複數個流量調 整閥包含流量調整閥56及流量調整閥60。複數個處理液槽包含處理液槽57及處理液槽58。複數個配管包含配管230a、配管230b、配管230c、配管230d及配管230e。 As shown in FIG. 9, the processing liquid chamber 5 includes a plurality of primary filters, a plurality of secondary filters, a plurality of valves, a plurality of flow regulating valves, a plurality of processing liquid tanks, a plurality of pipes, and a liquid discharge tank 70. The plurality of primary filters includes a primary filter 51 and a primary filter 52. The plural secondary filters include a secondary filter 61, a secondary filter 63, a secondary filter 65, and a secondary filter 67. The plural valves include a valve 53, a valve 54, a valve 55, a valve 59, a valve 62, a valve 64, a valve 66, and a valve 68. Multiple flow adjustments The whole valve includes a flow adjustment valve 56 and a flow adjustment valve 60. The plurality of processing liquid tanks includes a processing liquid tank 57 and a processing liquid tank 58. The plurality of pipes include pipe 230a, pipe 230b, pipe 230c, pipe 230d, and pipe 230e.

配管230a顯示連接於一次過濾器51之上游側之配管。配管230b顯示連接於一次過濾器52之下游側,且連接於處理液槽57及處理液槽58之上游側之配管。配管230c顯示連接於處理液槽57及處理液槽58之下游側之配管。配管230d顯示連接於二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67之上游側的分歧之配管。配管230e顯示連接於流體箱4之上游側之分歧之配管。 The piping 230a shows piping connected to the upstream side of the primary filter 51. The piping 230b shows piping connected to the downstream side of the primary filter 52 and connected to the upstream side of the processing liquid tank 57 and the processing liquid tank 58. The piping 230c shows piping connected to the downstream side of the processing liquid tank 57 and the processing liquid tank 58. The piping 230d shows the diverging piping connected to the upstream side of the secondary filter 61, the secondary filter 63, the secondary filter 65, and the secondary filter 67. The piping 230e shows the diverging piping connected to the upstream side of the fluid tank 4.

處理液(IPA)係於配管230a內流通且被供給於一次過濾器51。一次過濾器51與一次過濾器52自流動於配管之處理液中除去異物。一次過濾器51與一次過濾器52連接。一次過濾器51經由閥53而與排液槽70連接。一次過濾器52經由閥54而與排液槽70連接。金屬除去裝置200例如配置於配管230a中之任一部位。因此,於一次過濾器51內被供給有藉由金屬除去裝置200而已除去金屬之處理液。 The processing liquid (IPA) circulates in the pipe 230a and is supplied to the primary filter 51. The primary filter 51 and the primary filter 52 remove foreign substances from the processing liquid flowing through the piping. The primary filter 51 is connected to the primary filter 52. The primary filter 51 is connected to the drain tank 70 via the valve 53. The primary filter 52 is connected to the drain tank 70 via the valve 54. The metal removing device 200 is arranged at any place in the piping 230a, for example. Therefore, the treatment liquid from which the metal has been removed by the metal removal device 200 is supplied into the primary filter 51.

一次過濾器52經由配管230b而連接於處理液槽57及處理液槽58。於處理液槽57及處理液槽58內收容有處理液。處理液槽57經由閥55及流量調整閥56而與排液槽70連接。處理液槽58經由閥59及流量調整閥60而與排液槽70連接。金屬除去裝置200例如配置於配管230b中之任一之部位。因此,於處理液槽57及處理液槽58內被供給有藉由金屬除去裝置200而已除去金屬之處理液。 The primary filter 52 is connected to the processing liquid tank 57 and the processing liquid tank 58 via the piping 230b. The processing liquid is contained in the processing liquid tank 57 and the processing liquid tank 58. The treatment liquid tank 57 is connected to the drain tank 70 via a valve 55 and a flow rate adjustment valve 56. The treatment liquid tank 58 is connected to the drain tank 70 via a valve 59 and a flow rate adjustment valve 60. The metal removing device 200 is disposed at any part of the piping 230b, for example. Therefore, the processing liquid whose metal has been removed by the metal removing device 200 is supplied into the processing liquid tank 57 and the processing liquid tank 58.

處理液槽57經由配管230c及配管230d而與二次過濾器65及二次過濾器67連接。處理液槽58經由配管230c及配管230d而與二次過濾器61及二次過濾器63連接。配管230d係配管230c分歧之配管。二次過濾器65及二次過濾器67係自流動於配管之處理液中除去異物。金屬除去裝置200例如配置於配管230c中之任一之部位。此外,金屬除去裝置200例如配置於配管230d中之任一之部位。因此,於二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67內被供給有藉由金屬除去裝置200而已除去金屬之處理液。 The processing liquid tank 57 is connected to the secondary filter 65 and the secondary filter 67 via the piping 230c and the piping 230d. The processing liquid tank 58 is connected to the secondary filter 61 and the secondary filter 63 via the piping 230c and the piping 230d. The piping 230d is a piping where piping 230c diverges. The secondary filter 65 and the secondary filter 67 remove foreign substances from the processing liquid flowing through the piping. The metal removal device 200 is disposed at any part of the piping 230c, for example. In addition, the metal removing apparatus 200 is arrange|positioned at any part of piping 230d, for example. Therefore, the treatment liquid from which the metal has been removed by the metal removal device 200 is supplied into the secondary filter 61, the secondary filter 63, the secondary filter 65, and the secondary filter 67.

二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67分別經由配管230e而與流體箱4連接。配管230e係分歧之配管。金屬除去裝置200例如配置於分歧之配管230e中之任一部位。因此,於流體箱4內被供給有藉由金屬除去裝置200而已除去金屬之處理液。 The secondary filter 61, the secondary filter 63, the secondary filter 65, and the secondary filter 67 are respectively connected to the fluid tank 4 via the piping 230e. The piping 230e is a divergent piping. The metal removal device 200 is disposed at any part of the divergent piping 230e, for example. Therefore, the processing liquid whose metal has been removed by the metal removing device 200 is supplied in the fluid tank 4.

此外,金屬除去裝置200例如配置於一次過濾器51、一次過濾器52、二次過濾器61、二次過濾器63、二次過濾器65及二次過濾器67之各者。詳細而言,於一次過濾器51、一次過濾器52、二次過濾器61、二次過濾器63、二次過濾器65及二次過濾器67之各者的殼體上安裝有磁場產生部220。因此,可藉由金屬除去裝置200而除去在過濾器中無法除去之金屬。 In addition, the metal removal device 200 is disposed in each of the primary filter 51, the primary filter 52, the secondary filter 61, the secondary filter 63, the secondary filter 65, and the secondary filter 67, for example. In detail, the magnetic field generation part is attached to the housing of each of the primary filter 51, the primary filter 52, the secondary filter 61, the secondary filter 63, the secondary filter 65, and the secondary filter 67 220. Therefore, the metal that cannot be removed in the filter can be removed by the metal removal device 200.

再次參照圖8。如圖8所示,金屬除去裝置200係配置於連接在流體箱4內之供給調節部2之上游側之配管中的任一部位。此外,金屬除去裝置200係配置於至配置在流量調整閥22之下游側之噴嘴12為止的供給配管13中的任一部位。因此,噴嘴12 朝向基板W吐出藉由金屬除去裝置200而已除去金屬之處理液。 Refer to Figure 8 again. As shown in FIG. 8, the metal removal device 200 is arranged at any position in the piping connected to the upstream side of the supply regulator 2 in the fluid tank 4. In addition, the metal removing device 200 is arranged at any position in the supply pipe 13 up to the nozzle 12 arranged on the downstream side of the flow control valve 22. Therefore, the nozzle 12 The processing liquid from which the metal has been removed by the metal removing device 200 is discharged toward the substrate W.

再者,較佳為,捕集部210可自配管230上拆卸。例如,捕集部210也可經由接頭而連接配管230,進而可拆卸。該情況下,較佳為,藉由使用三通閥以設置旁通線路,藉此可以在不停止處理液之流動的情況下拆除捕集部210。此外,較佳為,配置於配管230之外周面232之磁場產生部220為可拆卸。藉由拆下磁場產生部220而可消除磁場。其結果,可自捕集部210釋放藉由捕集部210捕捉之金屬。該情況下,較佳為,將自捕集部210釋放之金屬排出至排液槽70。 Furthermore, it is preferable that the trapping part 210 can be detached from the piping 230. For example, the collection unit 210 may be connected to the pipe 230 via a joint, and may be detachable. In this case, it is preferable to provide a bypass line by using a three-way valve, whereby the trap part 210 can be removed without stopping the flow of the processing liquid. In addition, it is preferable that the magnetic field generating portion 220 disposed on the outer peripheral surface 232 of the pipe 230 is detachable. By removing the magnetic field generating part 220, the magnetic field can be eliminated. As a result, the metal captured by the collection unit 210 can be released from the collection unit 210. In this case, it is preferable to discharge the metal released from the trap part 210 to the drain tank 70.

此外,於磁場產生部220為電磁鐵之情況下,藉由停止供給於電磁鐵之電流,可不使磁場H作用於處理液。因此,可自捕集部210釋放藉由捕集部210捕捉之金屬。較佳為,將自捕集部210釋放之金屬排出至排液槽70。 In addition, when the magnetic field generating section 220 is an electromagnet, by stopping the current supplied to the electromagnet, the magnetic field H can be prevented from acting on the processing liquid. Therefore, the metal captured by the collection unit 210 can be released from the collection unit 210. Preferably, the metal released from the trap 210 is discharged to the drain tank 70.

以圖8所示之供給配管13中配置之金屬除去裝置200為例,說明捕捉之金屬的排出。首先,藉由停止供給於電磁鐵之電流,不使磁場H作用於處理液。其結果,可自捕集部210釋放藉由捕集部210捕捉之金屬。此時,藉由將閥23設為開放狀態,將分歧配管19內之處理液排出至排液槽70。亦即,將自捕集部210釋放之金屬排出至排液槽70。 Taking the metal removal device 200 disposed in the supply piping 13 shown in FIG. 8 as an example, the discharge of the captured metal will be described. First, by stopping the current supplied to the electromagnet, the magnetic field H is not applied to the processing liquid. As a result, the metal captured by the collection unit 210 can be released from the collection unit 210. At this time, by opening the valve 23, the processing liquid in the branch piping 19 is discharged to the drain tank 70. That is, the metal released from the trap 210 is discharged to the drain tank 70.

以上,參照圖式(圖1~圖9)對本發明之實施形態進行了說明。但是,本發明不限於上述實施形態,只要於未超出其實質內容之範圍內,可於各種各樣之態樣中實施。為了便於理解,圖式中主體性地示意顯示各構成要素,且考慮到圖式製作之方便性,圖示之各構成要素之厚度、長度、個數等與實際不同。此外,上述 實施形態所示之各構成要素之材質或形狀、尺寸等係一例而已,並無特別限制,可於實質上未脫離本發明之功效之範圍內進行各種之變更。 The embodiment of the present invention has been described above with reference to the drawings (FIGS. 1 to 9 ). However, the present invention is not limited to the above-mentioned embodiments, as long as it does not exceed the scope of the substance, it can be implemented in various aspects. In order to facilitate understanding, each component is schematically shown in the drawings subjectively, and considering the convenience of making the drawing, the thickness, length, number, etc. of each component shown in the drawings are different from the actual ones. In addition, the above The materials, shapes, sizes, etc. of the constituent elements shown in the embodiments are only examples, and are not particularly limited, and various changes can be made within a range that does not substantially deviate from the effects of the present invention.

200‧‧‧金屬除去裝置 200‧‧‧Metal removal device

210‧‧‧捕集部 210‧‧‧Capture Department

220、220a、220b‧‧‧磁場產生部 220, 220a, 220b

230‧‧‧配管 230‧‧‧Piping

232‧‧‧外周面 232‧‧‧Perimeter

233‧‧‧內周面 233‧‧‧Inner peripheral surface

234‧‧‧流通部 234‧‧‧Circulation Department

H‧‧‧磁場 H‧‧‧Magnetic field

M‧‧‧金屬 M‧‧‧Metal

Claims (16)

一種金屬除去裝置,其係除去處理液中含有之金屬者,該處理液係處理基板,該金屬除去裝置具備: A metal removal device that removes metals contained in a processing liquid for processing a substrate, the metal removal device includes: 磁場產生部,其使磁場作用於自處理液供給源供給之處理液;及 A magnetic field generating part which causes the magnetic field to act on the processing liquid supplied from the processing liquid supply source; and 捕集部,其受到上述磁場之作用而捕捉移動於處理液中之上述金屬。 The catching part catches the metal moving in the processing liquid by the action of the magnetic field. 如請求項1之金屬除去裝置,其中,進而具備配管,上述配管連接於上述處理液供給源, The metal removal device according to claim 1, further comprising piping, the piping is connected to the processing liquid supply source, 上述捕集部配置於上述配管。 The collecting part is arranged in the piping. 如請求項2之金屬除去裝置,其中,上述配管具有流通部, The metal removal device according to claim 2, wherein the piping has a circulation part, 上述流通部係供上述處理液流通且與上述捕集部鄰接, The circulation part is for the treatment liquid to circulate and is adjacent to the collection part, 上述捕集部中之上述處理液的流速係較上述流通部中之上述處理液的流速慢。 The flow velocity of the treatment liquid in the collection section is slower than the flow velocity of the treatment liquid in the circulation section. 如請求項2或3之金屬除去裝置,其中,上述配管係由非磁性體材料形成。 The metal removal device according to claim 2 or 3, wherein the piping is formed of a non-magnetic material. 如請求項2或3之金屬除去裝置,其中,上述配管係由全氟烷氧基乙烯(perfluoroalkoxy ethylene)形成。 The metal removal device according to claim 2 or 3, wherein the piping is formed of perfluoroalkoxy ethylene. 如請求項2或3之金屬除去裝置,其中,上述捕集部係配置於上述配管之直徑變化之部位。 The metal removal device according to claim 2 or 3, wherein the collecting part is arranged at a location where the diameter of the piping changes. 如請求項2或3之金屬除去裝置,其中,上述配管進而具有彎曲之彎曲部,上述捕集部係配置於上述彎曲部。 The metal removal device according to claim 2 or 3, wherein the piping further has a curved bent portion, and the collecting portion is arranged at the curved portion. 如請求項2或3之金屬除去裝置,其中,於上述捕集部中,上述配管之內周面具有凹凸形狀。 The metal removal device according to claim 2 or 3, wherein the inner peripheral surface of the pipe has a concave-convex shape in the collection section. 如請求項2或3之金屬除去裝置,其中,上述捕集部可自上述 配管拆卸,或者,配置於上述配管之外周面之上述磁場產生部可拆卸。 The metal removal device according to claim 2 or 3, wherein the above-mentioned trapping part can be The piping is detachable, or the magnetic field generating portion disposed on the outer peripheral surface of the piping is detachable. 如請求項1至3中任一項之金屬除去裝置,其中,上述磁場產生部包含電磁鐵,可切換是否使磁場作用於上述處理液。 The metal removal device according to any one of claims 1 to 3, wherein the magnetic field generating section includes an electromagnet, and can switch whether or not to apply a magnetic field to the processing liquid. 如請求項1之金屬除去裝置,其中,進而具備連接於上述處理液供給源之配管、及連接於上述配管且收容上述處理液之處理液收容部,上述捕集部係配置於上述處理液收容部。 The metal removal device according to claim 1, further comprising a pipe connected to the processing liquid supply source, and a processing liquid accommodating part connected to the piping and accommodating the processing liquid, and the collecting part is disposed in the processing liquid accommodating unit. 如請求項1至3中任一項之金屬除去裝置,其中,上述處理液係無極性或低極性。 The metal removal device according to any one of claims 1 to 3, wherein the treatment liquid is non-polar or low-polar. 如請求項1至3中任一項之金屬除去裝置,其中,上述處理液包含異丙醇。 The metal removal device according to any one of claims 1 to 3, wherein the treatment liquid contains isopropyl alcohol. 一種基板處理裝置,其具備請求項1至13中任一項之金屬除去裝置, A substrate processing apparatus provided with the metal removing apparatus according to any one of claims 1 to 13, 藉由通過上述金屬除去裝置之上述處理液而處理上述基板。 The substrate is processed by the processing liquid passing through the metal removal device. 一種基板處理方法,其包含以下之步驟: A substrate processing method, which includes the following steps: 自處理液供給源朝配管供給處理液之步驟; The step of supplying the processing liquid from the processing liquid supply source to the piping; 藉由利用磁場產生部產生之磁場而捕捉移動於上述處理液中之金屬,以除去上述處理液中含有之上述金屬之步驟;及 The step of removing the metal contained in the processing liquid by capturing the metal moving in the processing liquid by using the magnetic field generated by the magnetic field generating unit; and 藉由已除去上述金屬之上述處理液而處理基板之步驟。 The step of processing the substrate by the above processing liquid from which the above metal has been removed. 如請求項15之基板處理方法,其中,進而包含排出步驟,其藉由釋放已捕捉之金屬而進行排出。 The substrate processing method according to claim 15, which further includes a discharging step, which discharges by releasing the captured metal.
TW108126813A 2018-08-28 2019-07-29 Substrate treating apparatus, and substrate treating method TWI717791B (en)

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