TW202015119A - Metal removing device, substrate treating apparatus, and substrate treating method - Google Patents
Metal removing device, substrate treating apparatus, and substrate treating method Download PDFInfo
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- TW202015119A TW202015119A TW108126813A TW108126813A TW202015119A TW 202015119 A TW202015119 A TW 202015119A TW 108126813 A TW108126813 A TW 108126813A TW 108126813 A TW108126813 A TW 108126813A TW 202015119 A TW202015119 A TW 202015119A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 141
- 239000002184 metal Substances 0.000 title claims abstract description 141
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title description 8
- 239000007788 liquid Substances 0.000 claims abstract description 204
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 4
- 239000000696 magnetic material Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 229920013653 perfluoroalkoxyethylene Polymers 0.000 claims description 3
- 239000012530 fluid Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明係關於一種金屬除去裝置、基板處理裝置及基板處理方法。 The invention relates to a metal removal device, a substrate processing device and a substrate processing method.
於基板處理裝置中,對基板供給處理液而進行處理。若處理液內含有異物,則良率會變差,因此進行使用過濾器而將處理液中之異物除去的處理(例如,專利文獻1)。於專利文獻1之半導體基板洗淨裝置中,以過濾器吸附金屬雜質。
In the substrate processing apparatus, a processing liquid is supplied to the substrate and processed. If a foreign substance is contained in the treatment liquid, the yield will be deteriorated, and therefore a treatment is performed to remove the foreign substance in the treatment liquid using a filter (for example, Patent Document 1). In the semiconductor substrate cleaning device of
專利文獻1:日本專利特開平08-8223號公報 Patent Literature 1: Japanese Patent Laid-Open No. 08-8223
然而,於過濾器中,有可能無法除去處理液中含有之金屬。 However, in the filter, the metal contained in the treatment liquid may not be removed.
有鑑於上述課題,本發明之目的,在於提供一種金屬除去裝置、基板處理裝置及基板處理方法,其可除去處理液中之金屬。 In view of the above problems, an object of the present invention is to provide a metal removal device, a substrate processing device, and a substrate processing method, which can remove metals in a processing liquid.
本發明之金屬除去裝置係除去處理液中含有之金屬,該處理液係處理基板。金屬除去裝置,具備磁場產生部及捕集部。上述磁場產生部係使磁場作用於自處理液供給源供給之處理液。上述捕集部受到上述磁場之作用而捕捉移動於處理液中之上述金屬。 The metal removing device of the present invention removes the metal contained in the processing liquid, and the processing liquid treats the substrate. The metal removal device includes a magnetic field generation unit and a collection unit. The above-mentioned magnetic field generating unit applies a magnetic field to the processing liquid supplied from the processing liquid supply source. The trapping part is trapped by the magnetic field to trap the metal moving in the processing liquid.
於一實施形態中,金屬除去裝置進而具備配管。上述配管連接於上述處理液供給源。上述捕集部配置於上述配管。 In one embodiment, the metal removal device further includes piping. The piping is connected to the processing liquid supply source. The collecting part is arranged in the piping.
於一實施形態中,上述配管具有流通部。上述流通部係供上述處理液流通且與上述捕集部鄰接。上述捕集部中之上述處理液的流速係較上述流通部中之上述處理液的流速慢。 In one embodiment, the piping has a circulation part. The circulation unit is configured to circulate the processing liquid and is adjacent to the collection unit. The flow velocity of the treatment liquid in the collection section is slower than the flow velocity of the treatment liquid in the circulation section.
於一實施形態中,上述配管係由非磁性體材料形成。 In one embodiment, the piping system is formed of a non-magnetic material.
於一實施形態中,上述配管係由全氟烷氧基乙烯(perfluoroalkoxy ethylene)形成。 In one embodiment, the piping system is formed of perfluoroalkoxy ethylene.
於一實施形態中,上述捕集部係配置於上述配管之直徑變化之部位。 In one embodiment, the collecting portion is arranged at a location where the diameter of the piping changes.
於一實施形態中,上述配管進而具有彎曲之彎曲部。上述捕集部係配置於上述彎曲部。 In one embodiment, the piping further has a bent portion. The collecting part is arranged at the curved part.
於一實施形態中,於上述捕集部中,上述配管之內周面具有凹凸形狀。 In one embodiment, in the collection portion, the inner peripheral surface of the pipe has a concave-convex shape.
於一實施形態中,上述捕集部可自上述配管拆卸。或者,配置於上述配管之外周面之上述磁場產生部可拆卸。 In one embodiment, the collecting part can be detached from the piping. Alternatively, the magnetic field generating portion disposed on the outer peripheral surface of the piping may be detachable.
於一實施形態中,上述磁場產生部包含電磁鐵。上述磁場產生部可切換是否使磁場作用於上述處理液。 In one embodiment, the magnetic field generating section includes an electromagnet. The magnetic field generating unit can switch whether to apply a magnetic field to the processing liquid.
於一實施形態中,上述金屬除去裝置進而具備配管及處理液收容部。上述配管連接於上述處理液供給源。上述處理液收容部連接於上述配管。上述處理液收容部收容上述處理液。上述捕集部係配置於上述處理液收容部。 In one embodiment, the metal removal device further includes piping and a processing liquid storage unit. The piping is connected to the processing liquid supply source. The processing liquid storage unit is connected to the piping. The processing liquid storage unit stores the processing liquid. The collection unit is disposed in the processing liquid storage unit.
於一實施形態中,上述處理液係無極性或低極性。 In one embodiment, the treatment liquid system has no polarity or low polarity.
於一實施形態中,上述處理液包含異丙醇(isopropyl alcohol)。 In one embodiment, the treatment liquid contains isopropyl alcohol.
本發明之基板處理裝置具備上述記載之金屬除去裝置。上述基板處理裝置係藉由通過上述金屬除去裝置之上述處理液而處理上述基板。 The substrate processing apparatus of the present invention includes the metal removing apparatus described above. The substrate processing device processes the substrate by the processing liquid passing through the metal removal device.
本發明之基板處理方法係包含以下之步驟:自處理液供給源朝配管供給處理液之步驟;藉由利用磁場產生部產生之磁場而捕捉移動於上述處理液中之金屬,以除去上述處理液中含有之上述金屬之步驟;及藉由已除去上述金屬之上述處理液而處理基板之步驟。 The substrate processing method of the present invention includes the following steps: the step of supplying the processing liquid from the processing liquid supply source to the piping; the use of the magnetic field generated by the magnetic field generating section to capture the metal moving in the processing liquid to remove the processing liquid The step of the above-mentioned metal contained in; and the step of processing the substrate by the above-mentioned processing liquid from which the above-mentioned metal has been removed.
於一實施形態中,上述基板處理方法進而包含排出步驟,其藉由釋放已捕捉之金屬而進行排出。 In one embodiment, the above-mentioned substrate processing method further includes a discharging step, which discharges by releasing the captured metal.
根據本發明之金屬除去裝置,可除去處理液中之金屬。 According to the metal removal device of the present invention, the metal in the treatment liquid can be removed.
1‧‧‧處理單元 1‧‧‧Processing unit
2‧‧‧供給調節部 2‧‧‧Supply Regulation Department
4‧‧‧流體箱 4‧‧‧fluid tank
5‧‧‧處理液室 5‧‧‧Processing liquid chamber
10‧‧‧腔室 10‧‧‧ chamber
11‧‧‧旋轉夾頭 11‧‧‧Rotating chuck
12‧‧‧噴嘴 12‧‧‧ nozzle
13‧‧‧供給配管 13‧‧‧Supply piping
14‧‧‧噴嘴移動單元 14‧‧‧ Nozzle moving unit
16‧‧‧杯體 16‧‧‧Cup
19‧‧‧分歧配管 19‧‧‧Different piping
20‧‧‧閥 20‧‧‧Valve
21‧‧‧流量計 21‧‧‧Flowmeter
22‧‧‧流量調整閥 22‧‧‧Flow regulating valve
23‧‧‧閥 23‧‧‧Valve
51‧‧‧一次過濾器 51‧‧‧ Once filter
52‧‧‧一次過濾器 52‧‧‧One time filter
53~55、59、62、64、66、68‧‧‧閥 53~55, 59, 62, 64, 66, 68
56‧‧‧流量調整閥 56‧‧‧Flow regulating valve
57、58‧‧‧處理液槽 57、58‧‧‧Treatment liquid tank
60‧‧‧流量調整閥 60‧‧‧Flow regulating valve
61‧‧‧二次過濾器 61‧‧‧Secondary filter
63‧‧‧二次過濾器 63‧‧‧Secondary filter
65‧‧‧二次過濾器 65‧‧‧Secondary filter
67‧‧‧二次過濾器 67‧‧‧Secondary filter
70‧‧‧排液槽 70‧‧‧Drain tank
100‧‧‧基板處理裝置 100‧‧‧Substrate processing device
110‧‧‧夾頭構件 110‧‧‧Chuck components
111‧‧‧旋轉基座 111‧‧‧rotating base
112‧‧‧旋轉馬達 112‧‧‧rotating motor
200‧‧‧金屬除去裝置 200‧‧‧Metal removal device
210‧‧‧捕集部 210‧‧‧Capture Department
220、220a、220b‧‧‧磁場產生部 220, 220a, 220b
230、230a、230b、230c、230d、230e‧‧‧配管 230, 230a, 230b, 230c, 230d, 230e‧‧‧ piping
232‧‧‧外周面 232‧‧‧Perimeter
233‧‧‧內周面 233‧‧‧Inner peripheral surface
234‧‧‧流通部 234‧‧‧Circulation Department
235‧‧‧彎曲部 235‧‧‧Bend
240‧‧‧處理液供給源 240‧‧‧Process liquid supply source
250‧‧‧處理液收容部 250‧‧‧Processing liquid storage
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
A2‧‧‧轉動軸線 A2‧‧‧Rotation axis
CR‧‧‧中央機器人 CR‧‧‧Central Robot
d1、d2‧‧‧配管之直徑 d1, d2‧‧‧Pipe diameter
H‧‧‧磁場 H‧‧‧Magnetic field
IR‧‧‧索引機器人 IR‧‧‧ Index Robot
L1、L2‧‧‧資料 L1, L2‧‧‧ data
LP‧‧‧裝載埠 LP‧‧‧Loading port
M‧‧‧金屬 M‧‧‧Metal
TW‧‧‧塔架 TW‧‧‧Tower
W‧‧‧基板 W‧‧‧Substrate
圖1為顯示基板處理裝置之圖。 FIG. 1 is a diagram showing a substrate processing apparatus.
圖2(a)及(b)為顯示金屬除去裝置之示意性剖視圖。 2(a) and (b) are schematic cross-sectional views showing a metal removing device.
圖3為顯示本發明之實施形態中之金屬除去裝置之金屬的捕捉結果之圖。 FIG. 3 is a diagram showing the result of metal trapping in the metal removing device in the embodiment of the present invention.
圖4為顯示金屬除去裝置之示意性剖視圖。 4 is a schematic cross-sectional view showing a metal removing device.
圖5(a)至(d)為顯示金屬除去裝置之示意性剖視圖。 5(a) to (d) are schematic cross-sectional views showing a metal removing device.
圖6為顯示金屬除去裝置之示意性剖視圖。 6 is a schematic cross-sectional view showing a metal removing device.
圖7為顯示基板處理裝置之俯視圖。 7 is a plan view showing a substrate processing apparatus.
圖8為顯示基板處理裝置之配管之圖。 8 is a diagram showing piping of a substrate processing apparatus.
圖9為顯示處理液室之配管之圖。 9 is a diagram showing the piping of the processing liquid chamber.
以下,參照圖式,對本發明之實施形態進行說明。再者,圖中,對於相同或相當之部分,賦予相同之參照符號而不重複說明。此外,於本發明之實施形態中,X軸、Y軸及Z軸相互正交,且X軸及Y軸與水平方向平行,Z軸與鉛垂方向平行。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are given the same reference symbols without repeating the description. In addition, in the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
參照圖1,對本發明之實施形態之基板處理裝置100進行說明。首先,參照圖1而說明基板處理裝置100。圖1為顯示基板處理裝置100之圖。如圖1所示,基板處理裝置100係藉由處理液而處理基板W。具體而言,基板處理裝置100係一片一片地處理基板W之單片型。基板W為大致圓板狀。
1, a
基板處理裝置100具備處理單元1、供給調節部2及金屬除去裝置200。
The
處理單元1係朝基板W吐出處理液,以處理基板W。具體而言,處理單元1包含腔室10、旋轉夾頭11、噴嘴12、供給
配管13、噴嘴移動單元14及杯體16。
The
腔室10具有大致箱型形狀。腔室10係收容基板W、旋轉夾頭11、噴嘴12、供給配管13之一部分、噴嘴移動單元14及杯體16。旋轉夾頭11係保持基板W而進行旋轉。具體而言,旋轉夾頭11係於腔室10內一面水平地保持基板W一面使基板W繞旋轉軸線A1旋轉。
The
旋轉夾頭11包含複數個夾頭構件110、旋轉基座111及旋轉馬達112。複數個夾頭構件110係以水平之姿勢保持基板W。旋轉基座111係大致圓板狀,且以水平之姿勢支撐複數個夾頭構件110。旋轉馬達112藉由使旋轉基座111旋轉,而使保持於複數個夾頭構件110之基板W繞旋轉軸線A1旋轉。
The
噴嘴12係朝向基板W吐出處理液。處理液例如為無極性或低極性。處理液例如包含異丙醇(isopropyl alcohol:IPA)。
The
供給配管13連接於噴嘴12。供給配管13朝噴嘴12供給處理液。
The
供給調節部2調節處理液朝噴嘴12之供給量。供給調節部2係於腔室10之外部配置於供給配管13上。再者,供給調節部2也可於腔室10之內部配置於供給配管13上。
The
具體而言,供給調節部2將處理液朝噴嘴12之供給量設為零,即停止朝噴嘴12供給處理液。供給調節部2將處理液朝噴嘴12之供給量設為大於零,則朝噴嘴12供給處理液。供給調節部2係調節朝噴嘴12供給之處理液之流量。
Specifically, the
更具體而言,供給調節部2包含閥20、流量計21、及流量調整閥22。處理液之對噴嘴12之供給開始及供給停止係藉
由閥20所切換。具體而言,閥20係一開閉閥,而可切換為開放狀態及關閉狀態。開放狀態係指使朝向噴嘴12而流動於供給配管13內之處理液通過之狀態。關閉狀態係指停止自供給配管13朝噴嘴12供給處理液之狀態。
More specifically, the
流量計21檢測被供給至噴嘴12之處理液之流量。流量調整閥22調整被供給至噴嘴12之處理液之流量。若閥20成為開放狀態,則處理液以與流量調整閥22之開度對應之流量自供給配管13被供給至噴嘴12。其結果,自噴嘴12吐出處理液。開度顯示流量調整閥22開放之程度。
The
杯體16具有大致筒狀。杯體16承接自基板W排出之處理液。
The
噴嘴移動單元14係繞轉動軸線A2轉動,使噴嘴12水平地移動。具體而言,噴嘴移動單元14係使噴嘴12於噴嘴12之處理位置與待機位置之間水平地移動。處理位置表示基板W上方之位置。待機位置表示較旋轉夾頭11及杯體16靠外側之位置。此外,噴嘴移動單元14也可使噴嘴12鉛垂地移動。
The
金屬除去裝置200除去處理基板W之處理液中含有之金屬。基板處理裝置100利用通過金屬除去裝置200後之處理液而處理基板W。
The
參照圖2(a)及圖2(b),對本發明之實施形態中之金屬除去裝置200進行說明。圖2(a)及圖2(b)為顯示金屬除去裝置200之示意性剖視圖。
2 (a) and 2 (b), the
如圖2(a)及圖2(b)所示,金屬除去裝置200具備捕集部210、磁場產生部220及配管230。
As shown in FIGS. 2( a) and 2 (b ), the
配管230係供處理基板W之處理液流通。其中,處理液係於配管230內自圖之左側朝右側流動。亦即,圖之左側為上游側,圖之右側為下游側。處理液之流速例如為0.64m/秒。處理液內含有作為雜質之金屬M。金屬例如為鋁、鉻、鐵及鋅。金屬除去裝置200除去處理液中含有之金屬。配管230連接於處理液供給源。配管230具有供處理液流通之流通部234。流通部234係與捕集部210鄰接。配管230例如由非磁性體材料形成。詳細而言,配管230例如由全氟烷氧基乙烯形成。
The piping 230 is for circulating the processing liquid for processing the substrate W. The processing liquid flows in the piping 230 from the left side to the right side in the figure. That is, the left side of the figure is the upstream side, and the right side of the figure is the downstream side. The flow rate of the treatment liquid is, for example, 0.64 m/sec. The treatment liquid contains metal M as an impurity. The metal is, for example, aluminum, chromium, iron, and zinc. The
磁場產生部220例如為釹磁鐵。磁場產生部220a為N極之磁鐵。磁場產生部220b為S極之磁鐵。磁場產生部220例如安裝於配管230之外周面232。詳細而言,磁場產生部220a與磁場產生部220b係以藉由磁場產生部220a與磁場產生部220b夾持配管230之方式安裝於配管230之外周面232。因此,磁場產生部220係使磁場H作用於捕集部210內之處理液。磁通密度例如為200mT。再者,磁場產生部220也可為電磁鐵。於磁場產生部220為電磁鐵之情況下,可容易切換是否使磁場H作用於處理液。
The magnetic
捕集部210係配置於配管230。具體而言,捕集部210構成配管230之一部分。詳細而言,捕集部210表示配管230中的配置有磁場產生部220之部分。捕集部210內係供自處理液供給源供給之處理液流通。如圖2(a)所示,處理液中含有之金屬M係因磁場H而朝向捕集部210移動。因此,如圖2(b)所示,捕集部210受到磁場H之作用而捕捉移動於處理液中之金屬M。
The
接著,對本發明之實施形態之基板處理方法進行說明。基板處理方法包含供給步驟、除去步驟及處理步驟。於供給步
驟中,如圖2(a)所示,自處理液供給源朝配管230供給處理液。於除去步驟中,如圖2(b)所示,藉由利用磁場產生部220產生之磁場,捕捉移動於處理液中之金屬,以除去處理液中含有之金屬。於處理步驟中,藉由除去金屬後之處理液而處理基板W。根據本發明之實施形態之基板處理方法,可藉由除去金屬之處理液而處理基板W。因此,可提高良率。此外,較佳為,基板處理方法進而包含排出步驟。於排出步驟中,藉由釋放捕捉之金屬而進行排出。關於金屬之排出,容待後續參照圖8及圖9進行說明。
Next, a substrate processing method according to an embodiment of the present invention will be described. The substrate processing method includes a supply step, a removal step, and a processing step. Supply step
In the step, as shown in FIG. 2(a), the processing liquid is supplied from the processing liquid supply source to the
參照圖3,對本發明之實施形態中之金屬除去裝置之金屬的捕捉結果進行說明。圖3為顯示本發明之實施形態中之金屬除去裝置之金屬的捕捉結果之圖。於圖3中,橫軸顯示處理液中含有之金屬。於圖3中,縱軸顯示處理液中含有之金屬的量。縱軸之單位為E10 atomos/cm2。於圖3中,資料L1顯示不於配管設置磁場產生部之情況的資料。於圖3中,資料L2顯示於配管230設置磁場產生部220之情況的資料。作為測定條件,處理液為IPA,磁通密度為200mT,處理液之流速為0.64m/秒,配管230之直徑為10mm。
With reference to Fig. 3, the metal trapping result of the metal removing device in the embodiment of the present invention will be described. FIG. 3 is a diagram showing the result of metal trapping in the metal removing device in the embodiment of the present invention. In FIG. 3, the horizontal axis shows the metal contained in the treatment liquid. In FIG. 3, the vertical axis shows the amount of metal contained in the treatment liquid. The unit of the vertical axis is E10 atomos/cm 2 . In FIG. 3, the data L1 shows data in a case where the magnetic field generating part is not provided in the piping. In FIG. 3, the data L2 shows the data in the case where the magnetic
如圖3所示,與資料L1比較,可確認到資料L2中處理液含有之金屬的量減少。尤其是,可以確認鋁(Al)、鉻(Cr)、鐵(Fe)及鋅(Zn)減少。雖然鋁作為磁性體而磁性弱,但確認到自處理液中除去鋁之情形。這是因為鋁與磁性強之鐵一起結成塊,與鐵一起藉由捕集部210而被捕捉。
As shown in FIG. 3, compared with the data L1, it can be confirmed that the amount of metal contained in the processing liquid in the data L2 is reduced. In particular, it was confirmed that aluminum (Al), chromium (Cr), iron (Fe), and zinc (Zn) decreased. Although aluminum is weak as a magnetic substance, it was confirmed that aluminum was removed from the treatment liquid. This is because aluminum agglomerates with strong magnetic iron and is captured by the
以上,如參照圖1~圖3所作之說明,捕集部210受到磁場H之作用而捕捉移動於處理液中之金屬。因此,可除去處理
液中之金屬。其結果,可提高處理液之純度,進而可提高良率。
As described above with reference to FIGS. 1 to 3, the
此外,捕集部210配置於配管230。因此,可除去流動於配管230內之處理液中之金屬。其結果,可提高處理液之純度,可提高良率。
In addition, the
此外,配管230係由非磁性體材料形成。因此,不會妨礙磁場產生部220將磁場作用於捕集部210內之處理液。因此,磁場產生部220可使磁場作用於捕集部210內之處理液。其結果,捕集部210可藉由磁場H而捕捉移動於處理液中之金屬。
In addition, the piping 230 is formed of a non-magnetic material. Therefore, it does not prevent the magnetic
此外,處理液係無極性或低極性。因此,磁場產生部220可使磁場作用於捕集部210內之處理液。其結果,可捕捉在離子交換方式之過濾器中無法除去之處理液中的金屬。
In addition, the treatment liquid system has no polarity or low polarity. Therefore, the magnetic
於參照圖1~圖3說明之金屬除去裝置200中,捕集部210配置於配管230,但捕集部210也可配置於處理液收容部250。
In the
參照圖4,對本發明之實施形態2之金屬除去裝置200進行說明。圖4為顯示金屬除去裝置200之示意性剖視圖。實施形態2之金屬除去裝置200主要於捕集部210被配置於處理液收容部250之點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態2與實施形態1之不同點進行說明。
4, a
如圖4所示,金屬除去裝置200除了具備捕集部210、磁場產生部220、及配管230外,還具備處理液供給源240及處理液收容部250。
As shown in FIG. 4, the
磁場產生部220,安裝於處理液收容部250之外周面。
The magnetic
配管230連接於處理液供給源240。
The piping 230 is connected to the processing
處理液供給源240經由配管230朝處理液收容部250供給處理液。處理液供給源240例如為槽。
The processing
處理液收容部250連接於配管230。處理液收容部250係收容處理液。處理液收容部250例如為較處理液供給源240小之槽。處理液收容部250中之處理液之流速接近於零。
The processing
捕集部210配置於處理液收容部250。處理液收容部250中之處理液之流速接近於零。因此,捕集部210容易藉由磁場H而捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。
The
於參照圖1~圖3說明之金屬除去裝置200中,捕集部210配置於配管230之直線狀之部分上,但捕集部210也可配置於配管230之直線狀之部分以外。
In the
參照圖5(a)~(d),對本發明之實施形態3之金屬除去裝置200進行說明。圖5(a)~(d)為顯示金屬除去裝置200之示意性剖視圖。實施形態3之金屬除去裝置200主要於捕集部210被配置於配管230之直線狀之部分以外的點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態3與實施形態1之不同點進行說明。再者,於圖5(a)~圖5(d)中,為了簡化圖式,省略磁場產生部220。
5 (a) to (d), a
如圖5(a)所示,配管230之直徑係自d1增大為d2。捕集部210配置於配管230之直徑變化之部位。於配管230之直徑變化之部位,處理液之流速降低。亦即,捕集部210中之處理液之
流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。
As shown in FIG. 5(a), the diameter of the piping 230 increases from d1 to d2. The collecting
如圖5(b)所示,配管230具有彎曲部235。彎曲部235係配管230彎曲之部位。捕集部210配置於彎曲部235。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。
As shown in FIG. 5( b ), the piping 230 has a
如圖5(c)所示,配管230具有彎曲部235。彎曲部235係配管230彎曲之部位。於彎曲部235中,配管230凹陷。捕集部210配置於彎曲部235。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。
As shown in FIG. 5(c), the piping 230 has a
如圖5(d)所示,配管230具有複數個彎曲部235。彎曲部235係配管230彎曲之部位。捕集部210配置於複數個彎曲部235之各者上。於彎曲部235中,處理液之流速因壓力損失而降低。亦即,捕集部210中之處理液之流速,較流通部234中之處理液之流速慢。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。
As shown in FIG. 5(d), the piping 230 has a plurality of
再者,配管230之內周面233也可具有凹凸形狀。
Furthermore, the inner
參照圖6,對本發明之實施形態4之金屬除去裝置200
進行說明。圖6為顯示金屬除去裝置200之示意性剖視圖。實施形態4之金屬除去裝置200主要於配管230之內周面233具有凹凸形狀之點上,與實施形態1之金屬除去裝置200不同。以下,主要對實施形態4與實施形態1之不同點進行說明。
Referring to FIG. 6, a
如圖6所示,於捕集部210中,配管230之內周面233具有凹凸形狀。因此,捕集部210容易藉由磁場H捕捉移動於處理液中之金屬。其結果,可除去處理液中的金屬。
As shown in FIG. 6, in the
參照圖7~圖9,對本發明之實施形態5之基板處理裝置100進行說明。實施形態5係於具備複數個處理單元1之點上與實施形態1不同。以下,主要對實施形態5與實施形態1之不同點進行說明。
The
首先,參照圖7,對基板處理裝置100進行說明。圖7為顯示基板處理裝置100之俯視圖。如圖7所示,基板處理裝置100具備複數個裝載埠LP、索引機器人IR、中央機器人CR、複數個處理單元1、複數個流體箱4及處理液室5。
First, referring to FIG. 7, the
各裝載埠LP係積層收容複數片之基板W。索引機器人IR係於裝載埠LP與中央機器人CR之間搬送基板W。中央機器人CR係於索引機器人IR與處理單元1之間搬送基板W。各處理單元1係朝基板W吐出處理液,以處理基板W。各流體箱4收容流體機器。處理液室5收容處理液。
Each loading port LP is stacked to accommodate a plurality of substrates W. The indexing robot IR transfers the substrate W between the loading port LP and the central robot CR. The central robot CR transfers the substrate W between the index robot IR and the
具體而言,複數個處理單元1形成以俯視時圍繞中央機器人CR之方式配置的複數個塔架TW(實施形態5中為4個塔架
TW)。各塔架TW包含上下積層之複數個處理單元1(實施形態5中為3個處理單元1)。複數個流體箱4分別與複數個塔架TW對應。處理液室5內之處理液經由任一之流體箱4而供給於與流體箱4對應之塔架TW所包含之所有處理單元1。
Specifically, the plurality of
此外,於實施形態5中,基板處理裝置100係於每一腔室10具備旋轉夾頭11、噴嘴12及供給調節部2。各腔室10收容旋轉夾頭11、噴嘴12及供給調節部2。
In addition, in the fifth embodiment, the
其次,參照圖8及圖9,對朝噴嘴12之處理液之供給進行說明。圖8為顯示基板處理裝置100之配管之圖。圖9為顯示處理液室5之配管之圖。如圖8所示,基板處理裝置100係於各塔架TW上,按每個處理單元1而具備供給配管13、分歧配管19、供給調節部2及閥23。供給調節部2被收容於與塔架TW對應之流體箱4。各供給配管13之一部分被收容於腔室10,各供給配管13之另一部分被收容於流體箱4。分歧配管19顯示自供給配管13分歧之配管。分歧配管19經由閥23而與處理液室5之排液槽70(圖9)連接。藉由開閉閥23,控制是否排出分歧配管19內之處理液。例如,藉由將閥23設為開放狀態,將分歧配管19內之處理液排出至排液槽70。
Next, the supply of the processing liquid to the
如圖9所示,處理液室5具有複數個一次過濾器、複數個二次過濾器、複數個閥、複數個流量調整閥、複數個處理液槽、複數個配管、及排液槽70。複數個一次過濾器包含一次過濾器51、及一次過濾器52。複數個二次過濾器包含二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67。複數個閥包含閥53、閥54、閥55、閥59、閥62、閥64、閥66、閥68。複數個流量調
整閥包含流量調整閥56及流量調整閥60。複數個處理液槽包含處理液槽57及處理液槽58。複數個配管包含配管230a、配管230b、配管230c、配管230d及配管230e。
As shown in FIG. 9, the processing
配管230a顯示連接於一次過濾器51之上游側之配管。配管230b顯示連接於一次過濾器52之下游側,且連接於處理液槽57及處理液槽58之上游側之配管。配管230c顯示連接於處理液槽57及處理液槽58之下游側之配管。配管230d顯示連接於二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67之上游側的分歧之配管。配管230e顯示連接於流體箱4之上游側之分歧之配管。
The
處理液(IPA)係於配管230a內流通且被供給於一次過濾器51。一次過濾器51與一次過濾器52自流動於配管之處理液中除去異物。一次過濾器51與一次過濾器52連接。一次過濾器51經由閥53而與排液槽70連接。一次過濾器52經由閥54而與排液槽70連接。金屬除去裝置200例如配置於配管230a中之任一部位。因此,於一次過濾器51內被供給有藉由金屬除去裝置200而已除去金屬之處理液。
The processing liquid (IPA) circulates in the
一次過濾器52經由配管230b而連接於處理液槽57及處理液槽58。於處理液槽57及處理液槽58內收容有處理液。處理液槽57經由閥55及流量調整閥56而與排液槽70連接。處理液槽58經由閥59及流量調整閥60而與排液槽70連接。金屬除去裝置200例如配置於配管230b中之任一之部位。因此,於處理液槽57及處理液槽58內被供給有藉由金屬除去裝置200而已除去金屬之處理液。
The
處理液槽57經由配管230c及配管230d而與二次過濾器65及二次過濾器67連接。處理液槽58經由配管230c及配管230d而與二次過濾器61及二次過濾器63連接。配管230d係配管230c分歧之配管。二次過濾器65及二次過濾器67係自流動於配管之處理液中除去異物。金屬除去裝置200例如配置於配管230c中之任一之部位。此外,金屬除去裝置200例如配置於配管230d中之任一之部位。因此,於二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67內被供給有藉由金屬除去裝置200而已除去金屬之處理液。
The
二次過濾器61、二次過濾器63、二次過濾器65、及二次過濾器67分別經由配管230e而與流體箱4連接。配管230e係分歧之配管。金屬除去裝置200例如配置於分歧之配管230e中之任一部位。因此,於流體箱4內被供給有藉由金屬除去裝置200而已除去金屬之處理液。
The
此外,金屬除去裝置200例如配置於一次過濾器51、一次過濾器52、二次過濾器61、二次過濾器63、二次過濾器65及二次過濾器67之各者。詳細而言,於一次過濾器51、一次過濾器52、二次過濾器61、二次過濾器63、二次過濾器65及二次過濾器67之各者的殼體上安裝有磁場產生部220。因此,可藉由金屬除去裝置200而除去在過濾器中無法除去之金屬。
In addition, the
再次參照圖8。如圖8所示,金屬除去裝置200係配置於連接在流體箱4內之供給調節部2之上游側之配管中的任一部位。此外,金屬除去裝置200係配置於至配置在流量調整閥22之下游側之噴嘴12為止的供給配管13中的任一部位。因此,噴嘴12
朝向基板W吐出藉由金屬除去裝置200而已除去金屬之處理液。
Refer to Figure 8 again. As shown in FIG. 8, the
再者,較佳為,捕集部210可自配管230上拆卸。例如,捕集部210也可經由接頭而連接配管230,進而可拆卸。該情況下,較佳為,藉由使用三通閥以設置旁通線路,藉此可以在不停止處理液之流動的情況下拆除捕集部210。此外,較佳為,配置於配管230之外周面232之磁場產生部220為可拆卸。藉由拆下磁場產生部220而可消除磁場。其結果,可自捕集部210釋放藉由捕集部210捕捉之金屬。該情況下,較佳為,將自捕集部210釋放之金屬排出至排液槽70。
Furthermore, it is preferable that the trapping
此外,於磁場產生部220為電磁鐵之情況下,藉由停止供給於電磁鐵之電流,可不使磁場H作用於處理液。因此,可自捕集部210釋放藉由捕集部210捕捉之金屬。較佳為,將自捕集部210釋放之金屬排出至排液槽70。
In addition, when the magnetic
以圖8所示之供給配管13中配置之金屬除去裝置200為例,說明捕捉之金屬的排出。首先,藉由停止供給於電磁鐵之電流,不使磁場H作用於處理液。其結果,可自捕集部210釋放藉由捕集部210捕捉之金屬。此時,藉由將閥23設為開放狀態,將分歧配管19內之處理液排出至排液槽70。亦即,將自捕集部210釋放之金屬排出至排液槽70。
Taking the
以上,參照圖式(圖1~圖9)對本發明之實施形態進行了說明。但是,本發明不限於上述實施形態,只要於未超出其實質內容之範圍內,可於各種各樣之態樣中實施。為了便於理解,圖式中主體性地示意顯示各構成要素,且考慮到圖式製作之方便性,圖示之各構成要素之厚度、長度、個數等與實際不同。此外,上述 實施形態所示之各構成要素之材質或形狀、尺寸等係一例而已,並無特別限制,可於實質上未脫離本發明之功效之範圍內進行各種之變更。 The embodiment of the present invention has been described above with reference to the drawings (FIGS. 1 to 9 ). However, the present invention is not limited to the above-mentioned embodiments, as long as it does not exceed the scope of the substance, it can be implemented in various aspects. In order to facilitate understanding, each component is schematically shown in the drawings subjectively, and considering the convenience of making the drawing, the thickness, length, number, etc. of each component shown in the drawings are different from the actual ones. In addition, the above The materials, shapes, sizes, etc. of the constituent elements shown in the embodiments are only examples, and are not particularly limited, and various changes can be made within a range that does not substantially deviate from the effects of the present invention.
200‧‧‧金屬除去裝置 200‧‧‧Metal removal device
210‧‧‧捕集部 210‧‧‧Capture Department
220、220a、220b‧‧‧磁場產生部 220, 220a, 220b
230‧‧‧配管 230‧‧‧Piping
232‧‧‧外周面 232‧‧‧Perimeter
233‧‧‧內周面 233‧‧‧Inner peripheral surface
234‧‧‧流通部 234‧‧‧Circulation Department
H‧‧‧磁場 H‧‧‧Magnetic field
M‧‧‧金屬 M‧‧‧Metal
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