TW202011782A - Method for electroplating circuit board structure in hole - Google Patents
Method for electroplating circuit board structure in hole Download PDFInfo
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Abstract
Description
本發明涉及一種電路板,尤其涉及一種電路板結構的製造方法。 The invention relates to a circuit board, in particular to a method for manufacturing a circuit board structure.
現有的電路板製造方法在進行電路板的孔洞電鍍時,皆是採用恆定的電流密度(也就是,電流密度保持定值),而為達到均勻電鍍的效果,所以現有電路板製造方法需要採用較小的電流密度來增加灌孔率,但上述較小電流密度則會使電鍍時間加長,因而降低電鍍效率。 Existing circuit board manufacturing methods all use a constant current density (that is, the current density remains constant) when performing hole plating on the circuit board. To achieve the effect of uniform plating, the existing circuit board manufacturing methods need to use A small current density increases the hole filling rate, but the above-mentioned smaller current density will increase the plating time, thereby reducing the plating efficiency.
更進一步地說,現有電路板製造方法在對深寬比小於4的孔洞進行電鍍時,其對電鍍時間與電鍍效率的影響較不明顯,但隨著電路板的逐年發展,使得電路板需要形成有高深寬比之孔洞的比例也愈來愈高,所以現有電路板製造方法對於高深寬比之孔洞的電鍍方式也需要被進一步地改良。 Furthermore, the existing circuit board manufacturing methods have less influence on the plating time and plating efficiency when plating holes with an aspect ratio of less than 4, but with the development of circuit boards year by year, circuit boards need to be formed The proportion of holes with high aspect ratios is also getting higher and higher, so the existing circuit board manufacturing method also needs to be further improved for the plating method of holes with high aspect ratios.
於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the inventor believes that the above-mentioned defects can be improved, and Naite devotes himself to research and cooperates with the application of scientific principles, and finally proposes a reasonable design and effectively improves the above-mentioned defects of the present invention.
本發明實施例在於提供一種電路板結構的製造方法,其能有 效地改善現有電路板製造方法所可能產生的缺陷。 An embodiment of the present invention is to provide a method for manufacturing a circuit board structure, which can effectively improve defects that may be generated by the existing circuit board manufacturing methods.
本發明實施例公開一種電路板結構的製造方法,包括:實施一準備步驟:提供一電路板,並且所述電路板包含有一孔洞;其中,所述孔洞具有其孔徑除以孔深的一深寬比,並且所述深寬比不小於4;實施一第一電鍍步驟:以一第一電流對所述電路板的所述孔洞於一第一時段內進行電鍍,並且所述第一電流具有一第一電流密度值;以及實施一第二電鍍步驟:以一第二電流對所述電路板的所述孔洞於一第二時段內進行電鍍,並且所述第二電流具有一第二電流密度值;其中,所述第一電流密度值與所述第二電流密度值彼此相異、並且各介於4 ASF~60ASF。 An embodiment of the present invention discloses a method for manufacturing a circuit board structure, including: performing a preparation step: providing a circuit board, and the circuit board includes a hole; wherein the hole has a depth divided by the hole diameter divided by the hole depth Ratio, and the aspect ratio is not less than 4; implement a first electroplating step: electroplating the holes of the circuit board with a first current within a first time period, and the first current has a A first current density value; and implementing a second electroplating step: electroplating the hole of the circuit board with a second current within a second time period, and the second current has a second current density value ; Wherein, the first current density value and the second current density value are different from each other, and each is between 4 ASF ~ 60 ASF.
本發明實施例也公開一種電路板結構的製造方法,包括:實施一準備步驟:提供一電路板,並且所述電路板包含有一孔洞;其中,所述孔洞具有其孔徑除以孔深的一深寬比,並且所述深寬比不小於4;以及依序實施N個電鍍步驟:每個所述電鍍步驟以一電流對所述電路板的所述孔洞進行電鍍,並且所述電流具有一電流密度值;其中,N為不小於2的正整數,並且N個所述電鍍步驟中包含有兩種以上的所述電流密度值,並且任一個所述電流密度值是介於4 ASF~60ASF;其中,當任兩個依序實施的所述電鍍步驟中,其所使用的兩個所述電流密度值之差值大於2時,實施一電流轉換步驟;其中,所述電流轉換步驟是以一階梯電流對所述電路板的所述孔洞於一轉換時段內進行電鍍,並且所述階梯電流具有一階梯電流密度值,而所述階梯電流密度值在所述轉換時段內、自所使用的兩個所述電流密度值中的實施在前之所述電流密度值逐漸變更至實施在後之所述電流密度值;其中,所述轉換時段介於0~20分鐘。 An embodiment of the present invention also discloses a method for manufacturing a circuit board structure, including: performing a preparation step: providing a circuit board, and the circuit board includes a hole; wherein the hole has a depth divided by a hole depth Aspect ratio, and the aspect ratio is not less than 4; and N electroplating steps are sequentially performed: each of the electroplating steps electroplates the holes of the circuit board with a current, and the current has a current Density value; wherein, N is a positive integer not less than 2, and the N current electroplating steps include more than two kinds of the current density value, and any one of the current density value is between 4 ASF ~ 60ASF; Wherein, when any two of the electroplating steps performed in sequence, the difference between the two current density values used is greater than 2, a current conversion step is performed; wherein, the current conversion step is performed by a The stepped current plated the holes of the circuit board within a conversion period, and the stepped current has a stepped current density value, and the stepped current density value is within the conversion period from the two used Among the current density values, the current density value implemented before is gradually changed to the current density value implemented after; wherein the conversion period is between 0-20 minutes.
綜上所述,本發明實施例所公開之電路板結構的製造方法,其採用的多個電鍍步驟(如:第一電鍍步驟與第二電鍍步驟)能通過使用介於4 ASF~60ASF且彼此相異的電流密度值,藉以在盡 可能兼顧灌孔率的前提下,有效地提升電鍍效率與電鍍效果(如:達到較佳的灌孔率)。 In summary, the manufacturing method of the circuit board structure disclosed in the embodiments of the present invention adopts multiple electroplating steps (such as: the first electroplating step and the second electroplating step) by using between 4 ASF ~ 60 ASF and each other The different current density values can effectively improve the plating efficiency and the plating effect (for example, to achieve a better filling rate) under the premise of taking into account the filling rate as much as possible.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 In order to understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, not to make any protection to the scope of the present invention. limit.
1‧‧‧電路板 1‧‧‧ circuit board
11‧‧‧孔洞 11‧‧‧hole
2‧‧‧傳導體 2‧‧‧Conductor
21‧‧‧空間 21‧‧‧Space
3‧‧‧傳導體 3‧‧‧Conductor
X‧‧‧第一電流 X‧‧‧ First current
Y‧‧‧第二電流 Y‧‧‧second current
Z‧‧‧階梯電流 Z‧‧‧Step current
T1‧‧‧第一時段 T1‧‧‧First period
T2‧‧‧第二時段 T2‧‧‧Second period
Tc‧‧‧轉換時段 Tc‧‧‧Conversion period
I‧‧‧第一電流密度值 I‧‧‧ First current density value
Ⅱ‧‧‧第二電流密度值 Ⅱ‧‧‧ Second current density value
R‧‧‧孔徑 R‧‧‧Aperture
D‧‧‧孔深 D‧‧‧hole depth
圖1為本發明電路板結構的製造方法實施例一的準備步驟示意圖。 FIG. 1 is a schematic diagram of preparation steps of
圖2為本發明電路板結構的製造方法實施例一的第一電鍍步驟與第二電鍍步驟的電流密度與時間之示意圖。 FIG. 2 is a schematic diagram of the current density and time of the first electroplating step and the second electroplating step in
圖3為本發明電路板結構的製造方法實施例一經實施後的電路板結構示意圖。 FIG. 3 is a schematic diagram of the circuit board structure after the implementation of the first embodiment of the manufacturing method of the circuit board structure of the present invention.
圖4為本發明電路板結構的製造方法實施例二的第一電鍍步驟與第二電鍍步驟的電流密度與時間之示意圖。 4 is a schematic diagram of the current density and time of the first electroplating step and the second electroplating step in the second embodiment of the manufacturing method of the circuit board structure of the present invention.
圖5為本發明電路板結構的製造方法實施例二經實施後的電路板結構示意圖。 FIG. 5 is a schematic diagram of a circuit board structure after implementation of the second embodiment of the manufacturing method of the circuit board structure of the present invention.
圖6為本發明電路板結構的製造方法實施例三的第一電鍍步驟與第二電鍍步驟的電流密度與時間之示意圖(一)。 FIG. 6 is a schematic diagram (1) of current density and time of the first plating step and the second plating step in
圖7為本發明電路板結構的製造方法實施例三的第一電鍍步驟與第二電鍍步驟的電流密度與時間之示意圖(二)。 7 is a schematic diagram of the current density and time of the first plating step and the second plating step in the third embodiment of the manufacturing method of the circuit board structure of the present invention (2).
請參閱圖1至圖7所示,其為本發明的實施例,需先說明的是,本實施例對應附圖所提及的相關數量與外型,僅用來具體地說明本發明的實施方式,以便於了解本發明的內容,而非用來侷限本發明的保護範圍。 Please refer to FIG. 1 to FIG. 7, which are the embodiments of the present invention. It should be noted that this embodiment corresponds to the relevant quantity and appearance mentioned in the drawings, and is only used to specifically illustrate the implementation of the present invention. In order to facilitate understanding of the content of the present invention, rather than to limit the scope of protection of the present invention.
需先說明的是,為便於說明本實施例,圖式僅呈現相關的局部構造。其中,如圖1至圖3所示,本實施例公開一種電路板結構的製造方法,其包含有一準備步驟、一第一電鍍步驟、及一第二電鍍步驟。其中,本實施例電路板結構的製造方法中的任何電鍍步驟可以是由一電鍍設備(圖略)實施,也就是說,所述任何電鍍步驟中的各種參數可以由電鍍設備來控制。 It should be noted that, in order to facilitate the description of this embodiment, the drawings only show relevant partial structures. As shown in FIGS. 1 to 3, this embodiment discloses a method for manufacturing a circuit board structure, which includes a preparation step, a first electroplating step, and a second electroplating step. Wherein, any electroplating step in the manufacturing method of the circuit board structure of this embodiment may be implemented by an electroplating equipment (not shown), that is to say, various parameters in any electroplating step may be controlled by the electroplating equipment.
再者,本發明電路板結構的製造方法不受限於上述多個步驟的順序或實施方式。舉例來說,在本發明未繪示的其他實施例中,上述多個步驟也可以依據實際的設計需求而加以調整變化或增減。另,以下將分別介紹本實施例電路板結構的製造方法各個步驟。 Furthermore, the manufacturing method of the circuit board structure of the present invention is not limited to the order or implementation of the above-mentioned multiple steps. For example, in other embodiments not shown in the present invention, the above steps can also be adjusted, changed, or increased or decreased according to actual design requirements. In addition, each step of the manufacturing method of the circuit board structure of this embodiment will be described below.
如圖1所示,實施所述準備步驟:提供一電路板1,並且所述電路板1包含有一孔洞11。其中,所述電路板1於本實施例中可以採用多層板或單層板,並且上述孔洞11於圖1是以貫穿上述電路板1的一貫孔來說明,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述孔洞11也可以未貫穿電路板1的一盲孔。 As shown in FIG. 1, the preparation step is implemented: a
再者,所述孔洞11於本實施例中具有其孔徑R除以孔深D的一深寬比(aspect ratio,AR),並且所述深寬比不小於4。也就是說,本實施例電路板結構的製造方法所適用的物件或對象較佳是排除深寬比小於4的孔洞。 Furthermore, in this embodiment, the
如圖2所示,實施所述第一電鍍步驟:以一第一電流X對所述電路板1的孔洞11於一第一時段T1內進行電鍍,並且所述第一電流X具有一第一電流密度值I。於本實施例中,所述第一時段T1是介於5分鐘~80分鐘,而所述第一電流X的第一電流密度值 I介於4 ASF~60ASF,但本發明不以此為限。上述ASF於本實施例中是作為一種電流密度單位使用,也就是:安培/平方英尺。 As shown in FIG. 2, the first electroplating step is performed: the
如圖2所示,實施所述第二電鍍步驟:以一第二電流Y對所述電路板1的孔洞11於一第二時段T2內進行電鍍,並且所述第二電流Y具有一第二電流密度值Ⅱ。於本實施例中,所述第二時段T2是介於5分鐘~80分鐘,而所述第二電流Y的第二電流密度值Ⅱ介於4 ASF~60ASF,但本發明不以此為限。 As shown in FIG. 2, the second electroplating step is carried out: the
需說明的是,如圖2和圖3所示,所述第一電流密度值I與第二電流密度值Ⅱ彼此相異,並且所述第一電流密度值I與第二電流密度值Ⅱ的差值於本實施例是在2以下,藉以使上述第一電流密度值I能夠瞬間轉換至第二電流密度值Ⅱ。 It should be noted that, as shown in FIGS. 2 and 3, the first current density value I and the second current density value II are different from each other, and the first current density value I and the second current density value II The difference is less than 2 in this embodiment, so that the first current density value I can be instantly converted to the second current density value II.
再者,所述電路板結構的製造方法經由實施上述步驟之後,形成有鍍設於所述孔洞11之孔壁的一傳導體2,並且所述傳導體2內緣包圍形成有一空間21。 Furthermore, after performing the above steps, the manufacturing method of the circuit board structure is formed with a
進一步地說,為能在所述孔洞11內有效地形成上述傳導體2,所述第一電流密度值I較佳是小於所述第二電流密度值Ⅱ。其中,所述第一電流密度值I例如是介於4 ASF~12ASF,並且所述第二電流密度值Ⅱ例如是介於10 ASF~30ASF。 Furthermore, in order to effectively form the
請參閱圖4和圖5所示,其為本發明的實施例二,本實施例類似於上述實施例一,所以兩個實施例的相同處(如:準備步驟)則不再加以贅述,而本實施例相較於實施例一的差異主要在於:本實施例電路板結構的製造方法經實施之後,形成有鍍滿於所述孔洞11的一傳導體3。 Please refer to FIG. 4 and FIG. 5, which is the second embodiment of the present invention. This embodiment is similar to the above-mentioned first embodiment, so the similarities (eg, preparation steps) of the two embodiments will not be repeated, and The difference between this embodiment and the first embodiment mainly lies in that: after the manufacturing method of the circuit board structure of this embodiment is implemented, a
具體來說,為能在所述孔洞11內有效地形成上述傳導體3, 所述第一電流密度值I較佳是大於第二電流密度值Ⅱ。其中,所述第一電流密度值I例如是介於10 ASF~60ASF,而所述第二電流密度值Ⅱ例如是介於4ASF~15ASF。 Specifically, in order to effectively form the
請參閱圖6和圖7所示,其為本發明的實施例三,本實施例類似於上述實施例一和二,所以上述實施例的相同處(如:準備步驟、第一電鍍步驟、與第二電鍍步驟)則不再加以贅述,而本實施例相較於實施例一和二的差異主要在於:本實施例電路板結構的製造方法在上述第一電鍍步驟與第二電鍍步驟之間進一步實施一電流轉換步驟。 Please refer to FIG. 6 and FIG. 7, which is the third embodiment of the present invention. This embodiment is similar to the above-mentioned first and second embodiments, so the same points of the above-mentioned embodiments (such as: preparation step, first electroplating step, and The second electroplating step) will not be repeated here. The difference between this embodiment and the first and second embodiments is that the manufacturing method of the circuit board structure of this embodiment is between the first electroplating step and the second electroplating step. A current conversion step is further implemented.
具體來說,所述電流轉換步驟實施如下:以一階梯電流Z對所述電路板1的孔洞11於一轉換時段Tc內進行電鍍,並且所述階梯電流Z具有一階梯電流密度值。其中,上述階梯電流密度值在轉換時段Tc內、自所述第一電流密度值I逐漸變更(如:增加或降低)至第二電流密度值Ⅱ。 Specifically, the current conversion step is implemented as follows: the
其中,所述轉換時段Tc於本實施例中是介於0~20分鐘,並且上述轉換時段Tc的時間長短是大致依據所述第一電流密度值I與第二電流密度值Ⅱ的差值來決定,但本發明不以此為限。進一步地說,本實施例電路板結構的製造方法經實際操作後,得出下列的電流密度差值與轉換時段Tc之關係對應表。 In this embodiment, the conversion period Tc is between 0 and 20 minutes, and the length of the conversion period Tc is roughly based on the difference between the first current density value I and the second current density value II Decision, but the invention is not limited to this. Furthermore, after the actual operation of the manufacturing method of the circuit board structure of this embodiment, the following correspondence table of the relationship between the current density difference and the conversion period Tc is obtained.
依上表所載,所述第一電流密度值I與第二電流密度值Ⅱ的差值在2以下時,該轉換時段Tc為0分鐘,也就相當於上述實施例一和實施例二中所記載的第一電流密度值I瞬間轉換至第二電流密度值Ⅱ。 According to the above table, when the difference between the first current density value I and the second current density value II is less than 2, the conversion period Tc is 0 minutes, which is equivalent to the first and second embodiments The recorded first current density value I is instantly converted to the second current density value II.
再者,所述第一電流密度值I與第二電流密度值Ⅱ的差值介於3~5時,該轉換時段Tc為1~11分鐘;所述第一電流密度值I與第二電流密度值Ⅱ的差值介於6~9時,該轉換時段Tc為12~19分鐘;所述第一電流密度值I與第二電流密度值Ⅱ的差值在10以上時,該轉換時段Tc為20分鐘。 Furthermore, when the difference between the first current density value I and the second current density value II is between 3 and 5, the conversion period Tc is 1 to 11 minutes; the first current density value I and the second current When the difference between the density values II is between 6 and 9, the conversion period Tc is 12 to 19 minutes; when the difference between the first current density value I and the second current density value II is more than 10, the conversion period Tc For 20 minutes.
據此,本實施例電路板結構的製造方法能夠依據所述第一電流密度值I與第二電流密度值Ⅱ的差值,來調整轉換時段Tc的時間長短,進而能夠使上述電路板1的孔洞11具備有較佳的電鍍效果與電鍍效率。 According to this, the manufacturing method of the circuit board structure of this embodiment can adjust the length of the conversion period Tc according to the difference between the first current density value I and the second current density value II, thereby enabling the above-mentioned
需額外說明的是,上述實施例一至三是以兩個電鍍步驟來說明(如:第一電鍍步驟與第二電鍍步驟),但本發明電路板結構的製造方法所實施的電鍍步驟次數並不以此為限。 It should be additionally noted that the first to third embodiments described above are described with two electroplating steps (such as the first electroplating step and the second electroplating step), but the number of electroplating steps implemented by the manufacturing method of the circuit board structure of the present invention is not This is the limit.
進一步地說,在本發明未繪示的實施例中,所述電路板結構的製造方法可以是依序實施N個電鍍步驟,並且N為不小於2的正整數;其中,所述每個電鍍步驟以一電流對上述電路板1的孔洞11進行電鍍,並且所述電流具有一電流密度值。再者,上述N個電鍍步驟中包含有兩種以上的電流密度值,並且任一個電流密度值是介於4 ASF~60ASF。 Further, in an embodiment not shown in the present invention, the manufacturing method of the circuit board structure may be to sequentially implement N electroplating steps, and N is a positive integer not less than 2; wherein, each electroplating In the step, the
更詳細地說,當任兩個依序實施的所述電鍍步驟中,其所使用的兩個所述電流密度值之差值大於2時,實施一電流轉換步驟;而當上述任兩個依序實施的所述電鍍步驟中,其所使用的兩個所述電流密度值之差值小於2時,該兩個電流密度值能夠在瞬間進 行轉換。 More specifically, when any two of the electroplating steps performed in sequence, the difference between the two current density values used is greater than 2, a current conversion step is performed; In the electroplating step performed sequentially, when the difference between the two current density values used is less than 2, the two current density values can be converted in an instant.
其中,所述電流轉換步驟是以一階梯電流對所述電路板1的孔洞11於一轉換時段內進行電鍍,並且所述階梯電流具有一階梯電流密度值,而所述階梯電流密度值在所述轉換時段內、自所使用的兩個所述電流密度值中的實施在前之所述電流密度值逐漸變更至實施在後之所述電流密度值。再者,所述轉換時段介於0~20分鐘,其具體的時間長短可以參考實施例三所載。 In the current conversion step, the
需額外說明的是,上述N個電鍍步驟中所使用的電流密度值可以依據實際需求而控制為:由高到低、由低到高、或是高低交替,本發明在此不加以限制。 It should be additionally noted that the current density values used in the above N electroplating steps can be controlled according to actual needs: from high to low, from low to high, or alternate between high and low, and the invention is not limited herein.
此外,對於現有電路板製造方法來說,其在盡可能兼顧灌孔率的前提下,對於深寬比大於4且小於8的孔洞之電鍍效率會降低10%,並且對於深寬比大於8且小於11的孔洞之電鍍效率會降低40%,而對於深寬比大於11且小於16的孔洞之電鍍效率會降低70%。其中,現有電路板製造方法對於深寬比大於11且小於16的孔洞之灌孔率更是難以達到60%。 In addition, for the existing circuit board manufacturing method, under the premise of taking into account the filling rate as much as possible, the plating efficiency for holes with an aspect ratio greater than 4 and less than 8 will be reduced by 10%, and for the aspect ratio greater than 8 and Electroplating efficiency for holes less than 11 will be reduced by 40%, while for holes with an aspect ratio greater than 11 and less than 16, the plating efficiency will be reduced by 70%. Among them, the existing circuit board manufacturing method is difficult to achieve a hole filling rate of 60% for holes with an aspect ratio greater than 11 and less than 16.
然而,本實施例電路板結構的製造方法經實際操作後,其在盡可能兼顧灌孔率的前提下,對於深寬比大於4且小於16的孔洞11之電鍍效率相較於現有電路板製造方法來說皆能夠有效地提升。再者,本發明實施例所公開之電路板結構的製造方法對於深寬比大於11且小於16的所述孔洞11之灌孔率更是可以達到60%以上。 However, after actual operation of the manufacturing method of the circuit board structure of this embodiment, under the premise of taking into account the filling rate as much as possible, the plating efficiency of the
綜上所述,本發明實施例所公開之電路板結構的製造方法,其採用的多個電鍍步驟(如:第一電鍍步驟與第二電鍍步驟)能通過使用介於4 ASF~60ASF且彼此相異的電流密度值,藉以在盡 可能兼顧灌孔率的前提下,有效地提升電鍍效率與電鍍效果(如:達到較佳的灌孔率)。 In summary, the manufacturing method of the circuit board structure disclosed in the embodiments of the present invention adopts multiple electroplating steps (such as: the first electroplating step and the second electroplating step) by using between 4 ASF ~ 60 ASF and each other The different current density values can effectively improve the plating efficiency and the plating effect (for example, to achieve a better filling rate) under the premise of taking into account the filling rate as much as possible.
再者,本實施例電路板結構的製造方法還能夠進一步依據兩個實施的電鍍步驟之電流密度值差值(如:第一電流密度值與第二電流密度值的差值),來調整轉換時段的時間長短,進而能夠使上述電路板的孔洞具備有較佳的電鍍效果與電鍍效率。 Furthermore, the manufacturing method of the circuit board structure of this embodiment can further adjust the conversion according to the difference between the current density values of the two plating steps (eg, the difference between the first current density value and the second current density value) The length of the period of time can make the holes of the circuit board have better plating effect and plating efficiency.
以上所述僅為本發明的優選可行實施例,並非用來侷限本發明的保護範圍,凡依本發明專利範圍所做的均等變化與修飾,皆應屬本發明的權利要求書的保護範圍。 The above are only the preferred and feasible embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any changes and modifications made within the scope of the patent of the present invention shall fall within the scope of protection of the claims of the present invention.
X‧‧‧第一電流 X‧‧‧ First current
Y‧‧‧第二電流 Y‧‧‧second current
Z‧‧‧階梯電流 Z‧‧‧Step current
T1‧‧‧第一時段 T1‧‧‧First period
T2‧‧‧第二時段 T2‧‧‧Second period
Tc‧‧‧轉換時段 Tc‧‧‧Conversion period
I‧‧‧第一電流密度值 I‧‧‧ First current density value
Ⅱ‧‧‧第二電流密度值 Ⅱ‧‧‧ Second current density value
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