JPH0339488A - Method for electroless plating of tin or tin alloy - Google Patents
Method for electroless plating of tin or tin alloyInfo
- Publication number
- JPH0339488A JPH0339488A JP17322989A JP17322989A JPH0339488A JP H0339488 A JPH0339488 A JP H0339488A JP 17322989 A JP17322989 A JP 17322989A JP 17322989 A JP17322989 A JP 17322989A JP H0339488 A JPH0339488 A JP H0339488A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- tin
- alloy
- film
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 12
- 238000007772 electroless plating Methods 0.000 title abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 108
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000280 densification Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 11
- 239000002253 acid Substances 0.000 description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 5
- 229910001432 tin ion Inorganic materials 0.000 description 5
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 150000003460 sulfonic acids Chemical class 0.000 description 4
- 150000003754 zirconium Chemical class 0.000 description 4
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- -1 perchloric acid compound Chemical class 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- JIRHAGAOHOYLNO-UHFFFAOYSA-N (3-cyclopentyloxy-4-methoxyphenyl)methanol Chemical compound COC1=CC=C(CO)C=C1OC1CCCC1 JIRHAGAOHOYLNO-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- YCELPWGPXSJYMB-OWOJBTEDSA-N (e)-2-sulfobut-2-enedioic acid Chemical compound OC(=O)\C=C(/C(O)=O)S(O)(=O)=O YCELPWGPXSJYMB-OWOJBTEDSA-N 0.000 description 1
- YCELPWGPXSJYMB-UPHRSURJSA-N (z)-2-sulfobut-2-enedioic acid Chemical compound OC(=O)\C=C(\C(O)=O)S(O)(=O)=O YCELPWGPXSJYMB-UPHRSURJSA-N 0.000 description 1
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- MCXZBEZHTYZNRE-UHFFFAOYSA-N 1-chloropropane-1-sulfonic acid Chemical compound CCC(Cl)S(O)(=O)=O MCXZBEZHTYZNRE-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- NSRGOAGKXKNHQX-UHFFFAOYSA-N 2-hydroxybutane-1-sulfonic acid Chemical compound CCC(O)CS(O)(=O)=O NSRGOAGKXKNHQX-UHFFFAOYSA-N 0.000 description 1
- RIYJUQDMHMUBMK-UHFFFAOYSA-N 2-hydroxypentane-1-sulfonic acid Chemical compound CCCC(O)CS(O)(=O)=O RIYJUQDMHMUBMK-UHFFFAOYSA-N 0.000 description 1
- HSXUNHYXJWDLDK-UHFFFAOYSA-N 2-hydroxypropane-1-sulfonic acid Chemical compound CC(O)CS(O)(=O)=O HSXUNHYXJWDLDK-UHFFFAOYSA-N 0.000 description 1
- ZMPRRFPMMJQXPP-UHFFFAOYSA-N 2-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1S(O)(=O)=O ZMPRRFPMMJQXPP-UHFFFAOYSA-N 0.000 description 1
- WBGKAOURNYRYBT-UHFFFAOYSA-N 2-sulfopropanoic acid Chemical compound OC(=O)C(C)S(O)(=O)=O WBGKAOURNYRYBT-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- OURSFPZPOXNNKX-UHFFFAOYSA-N 3-sulfopropanoic acid Chemical compound OC(=O)CCS(O)(=O)=O OURSFPZPOXNNKX-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- HWTDMFJYBAURQR-UHFFFAOYSA-N 80-82-0 Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O HWTDMFJYBAURQR-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 150000008107 benzenesulfonic acids Chemical class 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- BRXCDHOLJPJLLT-UHFFFAOYSA-N butane-2-sulfonic acid Chemical compound CCC(C)S(O)(=O)=O BRXCDHOLJPJLLT-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- RJQRCOMHVBLQIH-UHFFFAOYSA-M pentane-1-sulfonate Chemical compound CCCCCS([O-])(=O)=O RJQRCOMHVBLQIH-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- HNDXKIMMSFCCFW-UHFFFAOYSA-N propane-2-sulphonic acid Chemical compound CC(C)S(O)(=O)=O HNDXKIMMSFCCFW-UHFFFAOYSA-N 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- AGGIJOLULBJGTQ-UHFFFAOYSA-N sulfoacetic acid Chemical compound OC(=O)CS(O)(=O)=O AGGIJOLULBJGTQ-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 1
- WGHUNMFFLAMBJD-UHFFFAOYSA-M tetraethylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CC[N+](CC)(CC)CC WGHUNMFFLAMBJD-UHFFFAOYSA-M 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- GBNDTYKAOXLLID-UHFFFAOYSA-N zirconium(4+) ion Chemical compound [Zr+4] GBNDTYKAOXLLID-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Landscapes
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子部品に半田付は性を付与するために無電
解錫又は錫合金めっき皮膜を形成する場合などに採用さ
れる無電゛解錫又は錫合金めっき方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to an electroless tin or tin alloy plating film which is employed when forming an electroless tin or tin alloy plating film to impart solderability to electronic parts. This invention relates to a tin or tin alloy plating method.
〔従来の技術及び発明が解決しようとする課題〕従来よ
り、プリント基板、チップ部品等の電子部品に良好な半
田付は牲を付与するために錫又は錫合金めっきを施すこ
とが行なわれている。[Prior art and problems to be solved by the invention] Conventionally, tin or tin alloy plating has been applied to electronic components such as printed circuit boards and chip components in order to provide good soldering properties. .
この際、電子部品相互がぶつかり合ったりする場合など
に部品に傷が付くことを防止し、強度アップを計るため
に部品に下地めっきとしてニッケルめっきを施すことが
望まれ、電子部品にニッケルめっき皮膜を形成した後、
その上に錫又は錫合金めっきを行なうことが要望される
。At this time, it is desirable to apply nickel plating to the parts as a base plating in order to prevent them from being scratched when they collide with each other and to increase their strength. After forming the
It is desired to perform tin or tin alloy plating thereon.
従来、このようにニッケル又はニッケル合金めっき皮膜
が形成された被めっき物に錫又は錫合金皮膜を形成する
方法としては、ペースト法、電気めっき法が採用されて
いる。しかし、電子部品においては、最近の部品の細密
化、微小化に伴い、これらの方法では錫又は錫合金皮膜
を均一に形成することが困難である。Conventionally, paste methods and electroplating methods have been adopted as methods for forming tin or tin alloy films on objects to be plated on which nickel or nickel alloy plating films have been formed. However, with the recent miniaturization and miniaturization of electronic components, it is difficult to uniformly form a tin or tin alloy film using these methods.
このため、錫又は錫合金皮膜を無電解めっき法により形
成することが望まれているが、従来の無電解錫又は錫合
金めっき浴はニッケル又はニッケル合金上には直接析出
反応が開始しないため、無電解めっき法を採用していな
いのが現状である。For this reason, it is desired to form a tin or tin alloy film by electroless plating, but since conventional electroless tin or tin alloy plating baths do not initiate a precipitation reaction directly on nickel or nickel alloys, Currently, electroless plating is not used.
本発明はかかる事情を改善するためになされたもので、
被めっき物に強度アップ等のために形成したニッケル又
はニッケル合金めっき皮膜に対し無電解錫又は錫合金め
っきを施す方法を提供することを目的とする。The present invention was made to improve this situation.
It is an object of the present invention to provide a method for applying electroless tin or tin alloy plating to a nickel or nickel alloy plating film formed on an object to be plated to increase strength or the like.
〔課題を解決するための手段及び作用〕本発明者は、上
記目的を達成するため種々検討を行なった結果、被めっ
き物にニッケル又はニッケル合金めっき皮膜を形成した
上に銅又は銅合金めっき皮膜を形成して、無電解錫又は
錫合金めっきを行なうことにより１通常の無電解錫又は
錫合金めっき浴は銅又は銅合金めっき皮膜に対してはめ
っき反応がスタートするので、ニッケル又はニッケル合
金めっき皮膜上に支障なく無電解錫又は錫合金めっき皮
膜を形成することができ、従って電子部品の細密化、微
小化にも十分対応して良好な半田付は性を付与すること
ができると共に、ニッケル、ニッケル合金めっき皮膜の
形成により強度アップを計ることができることを知見し
、本発明をなすに至ったものである。[Means and effects for solving the problem] As a result of various studies to achieve the above object, the inventor of the present invention formed a nickel or nickel alloy plating film on the object to be plated, and then coated the object with a copper or copper alloy plating film. By forming , and performing electroless tin or tin alloy plating, 1. Normal electroless tin or tin alloy plating bath starts plating reaction for copper or copper alloy plating film, so nickel or nickel alloy plating is performed. It is possible to form an electroless tin or tin alloy plating film on the film without any trouble, and therefore it can fully respond to the miniaturization and miniaturization of electronic parts, and can provide good soldering properties, as well as nickel. The present invention was based on the discovery that strength can be increased by forming a nickel alloy plating film.
それ故、本発明は、被めっ−き物に直接又は下地めっき
皮膜を介してニッケル又はニッケル合金めっき皮膜を形
成した後、その上に銅又は銅合金めっき皮膜を形成し１
次いで該銅又は銅合金めっき皮膜上に無電解錫又は錫合
金めっきを施すことを特徴とする無電解錫又は錫合金め
っき方法を提供する。Therefore, the present invention involves forming a nickel or nickel alloy plating film on the object to be plated directly or via a base plating film, and then forming a copper or copper alloy plating film thereon.
The present invention provides an electroless tin or tin alloy plating method characterized in that electroless tin or tin alloy plating is then applied on the copper or copper alloy plating film.
以下、本発明につき更に詳しく説明する。The present invention will be explained in more detail below.
本発明は、各種電子部品などに対し適用されるが、その
材質は特に制限されず、めっき可能なものであればよい
。The present invention is applied to various electronic components, but the material thereof is not particularly limited as long as it can be plated.
本発明においては、まず被めっき物をその種類に応じた
前処理を施し、次いで直接又は適宜な下地めっき皮膜を
形成した後、ニッケル又はニッケル合金めっき皮膜を形
成する。この場合、ニッケル、ニッケル合金めっきは電
気めっきでも無電解めっきでもよく、公知のめっき浴を
用いてその通常のめっき条件でめっきを施すことができ
るが、細密、微小部分に対してめっきを行なう場合は無
電解ニッケル又はニッケル合金めっき法を採用すること
が好ましい、なお、ニッケル合金としては。In the present invention, the object to be plated is first subjected to pretreatment according to its type, and then a nickel or nickel alloy plating film is formed directly or after forming an appropriate base plating film. In this case, nickel or nickel alloy plating may be electroplated or electroless plating, and plating can be performed using a known plating bath under normal plating conditions, but when plating is performed on minute or minute parts. It is preferable to adopt an electroless nickel or nickel alloy plating method, as for the nickel alloy.
ニッケルーコバルト、ニッケルー鉄などを挙げることが
でき、またニッケル又はニッケル合金めっき皮膜の膜厚
は通常０．５〜５μである。Examples include nickel-cobalt and nickel-iron, and the thickness of the nickel or nickel alloy plating film is usually 0.5 to 5 μm.
次に５本発明は上記ニッケル又はニッケル合金めっき皮
膜上に銅又は銅合金めっき皮膜を形成する。この銅、銅
合金めっき皮膜の形成も、電気めっき、無電解めっきの
いずれの方法でもよく、公知のめっき浴を用いてその通
常のめっき条件でめっきすることができるが、細密、微
小部分に対しては無電解めっき法が好適に採用される。Next, in the fifth aspect of the present invention, a copper or copper alloy plating film is formed on the nickel or nickel alloy plating film. This copper or copper alloy plating film can be formed by either electroplating or electroless plating, and can be plated using a known plating bath under normal plating conditions, but In this case, electroless plating is preferably employed.
なお、銅合金としては銅−亜鉛、銅−錫等が挙げられる
。Note that copper alloys include copper-zinc, copper-tin, and the like.
また、銅、銅合金めっき皮膜の膜厚は１〜５−とするこ
とが好ましい。Moreover, it is preferable that the film thickness of the copper or copper alloy plating film is 1 to 5-.
本発明においては、このようにニッケル又はニッケル合
金めっき皮膜上に銅又は銅合金めっき皮膜を形成した後
、無電解錫又は錫合金めっきを行なう。In the present invention, after forming the copper or copper alloy plating film on the nickel or nickel alloy plating film, electroless tin or tin alloy plating is performed.
この場合、めっき浴としては公知のもの、特に酸性浴を
使用し、その通常の条件を採用してめっきすることがで
きるが、特に本出願人が先に特願昭６３−２１１８４号
及び特願平１−３７５３８号で提案しためっき浴、即ち
置換又は未置換のアルカンスルホン酸、ヒドロキシアル
カンスルホン酸、ベンゼンスルホン酸及びナフタレンス
ルホン酸から選ばれる１種以上の有機スルホン酸、これ
らスルホン酸の２価の錫塩、チオ尿素、水溶性ジルコニ
ウム塩を含有してなる無電解錫めっき浴、及び、２価の
錫イオンと、有機スルホン酸、有機カルボン酸及びホウ
フッ酸から選ばれる１種以上の酸と、チオ尿素と、過塩
素酸及び過塩素酸化合物から選ばれる１種以上の化合物
とを含有してなる無電解錫めっき浴が好適に使用される
。In this case, it is possible to use a known plating bath, especially an acidic bath, and to carry out plating under the usual conditions. The plating bath proposed in No. 1-37538, that is, one or more organic sulfonic acids selected from substituted or unsubstituted alkanesulfonic acids, hydroxyalkanesulfonic acids, benzenesulfonic acids, and naphthalenesulfonic acids, and the dihydric acid of these sulfonic acids. an electroless tin plating bath containing a tin salt, thiourea, and a water-soluble zirconium salt; divalent tin ions; and one or more acids selected from organic sulfonic acids, organic carboxylic acids, and borofluoric acids. An electroless tin plating bath containing , thiourea, and one or more compounds selected from perchloric acid and perchloric acid compounds is preferably used.
ここで、前者の浴において、有機スルホン酸としては、
メタンスルホン酸、エタンスルホン酸、プロパンスルホ
ン酸、２−プロパンスルホン酸、ブタンスルホン酸、２
−ブタンスルホン酸、ペンタンスルホン酸、クロルプロ
パンスルホン酸、２−ヒドロキシエタン−ｌ−スルホン
酸、２−ヒドロキシプロパン−１−スルホン酸、２−ヒ
ドロキシブタン−１−スルホン酸、２−ヒドロキシペン
タンスルホン酸、アリルスルホン酸、２−スルホ酢酸、
２−又は３−スルホプロピオン酸、スルホこはく酸、ス
ルホマレイン酸、スルホフマル酸、ベンゼンスルホン酸
、トルエンスルホン酸、キシレンスルホン酸、ニトロベ
ンゼンスルホン酸、スルホ安息香酸、スルホサルチル酸
、ベンズアルデヒドスルホン酸、ｐ−フェノールスルホ
ン酸などを挙げることができる。Here, in the former bath, as the organic sulfonic acid,
Methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, 2-propanesulfonic acid, butanesulfonic acid, 2
-butanesulfonic acid, pentanesulfonic acid, chloropropanesulfonic acid, 2-hydroxyethane-l-sulfonic acid, 2-hydroxypropane-1-sulfonic acid, 2-hydroxybutane-1-sulfonic acid, 2-hydroxypentanesulfonic acid , allylsulfonic acid, 2-sulfoacetic acid,
2- or 3-sulfopropionic acid, sulfosuccinic acid, sulfomaleic acid, sulfofumaric acid, benzenesulfonic acid, toluenesulfonic acid, xylene sulfonic acid, nitrobenzenesulfonic acid, sulfobenzoic acid, sulfosalcylic acid, benzaldehyde sulfonic acid, p-phenol Examples include sulfonic acid.
上記有機スルホン酸の使用量は、めっき浴ＩＱ当り２０
〜３００ｇ、特に５０−１５０ｇとすることが好ましく
、また２価の錫塩は錫イオンとして１０〜５０ｇ、特に
１０〜３０ｇとすることが好ましい、この場合、有機ス
ルホン酸と２価の錫イオンとの割合は１〜１０：１、特
に３〜７：１程度とすることが好適である。なお、有機
スルホン酸の２価の錫塩は、過剰の有機スルホン酸を用
い、これに他の２価の錫塩を添加して、めっき浴中で有
機スルホン酸の２価の錫塩を形成することができる。The amount of the organic sulfonic acid used is 20 per plating bath IQ.
~300g, especially preferably 50-150g, and the divalent tin salt is preferably 10-50g, particularly 10-30g as tin ions.In this case, the amount of divalent tin salt is preferably 10-50g, especially 10-30g. The ratio is preferably about 1 to 10:1, particularly about 3 to 7:1. Note that the divalent tin salt of an organic sulfonic acid is prepared by using an excess of organic sulfonic acid and adding another divalent tin salt to it to form a divalent tin salt of an organic sulfonic acid in a plating bath. can do.
また、前者の浴において、チオ尿素の使用量はめっき浴
ＩＱ当り３０〜１３０ｇ、特に５０〜１１０ｇとするこ
とが好ましい。更に、該浴には水溶性ジルコニウム塩が
添加されるが、水溶性ジルコニウム塩の添加により均一
で微細な粒子の析出皮膜を形成することができる。この
場合、水溶性ジルコニウム塩としては硝酸ジルコニウム
、ジルコニウムアセチルアセトネート等を用いることが
でき、その使用量はジルコニウムイオンとして１０ ”
１０００ ｍｇ ／ １１、特に５０〜２００ｍｇ／
１１！とすることが有効である。In the former bath, the amount of thiourea used is preferably 30 to 130 g, particularly 50 to 110 g, per plating bath IQ. Further, a water-soluble zirconium salt is added to the bath, and by adding the water-soluble zirconium salt, a deposited film of uniform and fine particles can be formed. In this case, zirconium nitrate, zirconium acetylacetonate, etc. can be used as the water-soluble zirconium salt, and the amount used is 10" as zirconium ion.
1000 mg/11, especially 50-200 mg/
11! It is effective to do so.
なお、このめっき浴は酸性であり、特にｐＨ０，２〜１
．５、より望ましくは０．５〜０．９であることが好ま
しい。また、このめっき浴を用いて無電解錫めっきを行
なう場合、その温度は６０〜９０℃、特に６５〜８０℃
が好ましく、このめっき浴を使用することにより、均一
で微密な粒子からなる緻密な皮膜を形成することができ
る。Note that this plating bath is acidic, especially at pH 0.2 to 1.
．． 5, more preferably 0.5 to 0.9. In addition, when performing electroless tin plating using this plating bath, the temperature is 60 to 90°C, especially 65 to 80°C.
is preferable, and by using this plating bath, a dense film consisting of uniform and fine particles can be formed.
一方、後者の浴において、有機スルホン酸としては上述
したものと同様のものが使用でき、また有機カルボン酸
としては、酒石酸、リンゴ酸、クエン酸、コハク酸、グ
ルコン酸などが使用される。On the other hand, in the latter bath, the same organic sulfonic acids as those mentioned above can be used, and the organic carboxylic acids include tartaric acid, malic acid, citric acid, succinic acid, and gluconic acid.
これら酸の使用量は、特に制限されないが、２０〜３０
０ ｇ ／ Ｑ、特に５０〜１５０ｇ／氾とすることが
好ましく、また酸と２価の錫イオンとの割合は１〜１０
：１、特に３〜７：１とすることが好適である。なお、
２価の錫イオンを供給する錫源としては種々選択し得、
例えば酸化錫、塩化錫、硫酸錫、更に有機スルホン酸錫
、有機カルボン酸錫、ホウフッ化錫などを挙げることが
できる。なお、浴中の２価の錫イオン量は１０〜５０ｇ
／Ｑ、特に１０〜３０ ｇ ／ Ｑとすることが好まし
い。The amount of these acids used is not particularly limited, but 20 to 30
0 g/Q, especially preferably 50 to 150 g/flood, and the ratio of acid to divalent tin ion is 1 to 10
:1, particularly preferably 3 to 7:1. In addition,
Various tin sources can be selected for supplying divalent tin ions,
Examples include tin oxide, tin chloride, tin sulfate, tin organic sulfonate, tin organic carboxylate, tin borofluoride, and the like. The amount of divalent tin ions in the bath is 10 to 50 g.
/Q, particularly preferably 10 to 30 g/Q.
更に、この浴にはチオ尿素が添加されるが、その使用量
はめっき浴１氾当り３０〜１３０ｇ、特に５０〜１１０
ｇとすることが好ましい。また、上記の成分に加え、過
塩素酸又は過塩素酸化合物が添加され、これによりめっ
き浴が安定化されると共に、析出速度がアップするもの
である。この場合、過塩素酸化合物としては、過塩素酸
アンモニウム、過塩素酸ナト′リウム、過塩素酸カリウ
ム、過塩素酸リチウム、過塩素酸テトラエチルアンモニ
ウム、過塩素酸テトラブチルアンモニウム等が用いられ
る。これら過塩素酸、過塩素酸化合物の使用量は１〜３
００ｇ／息、特に１０−１８０ｇ／Ｑとすることが好ま
しい。Furthermore, thiourea is added to this bath, and the amount used is 30 to 130 g, especially 50 to 110 g per plating bath flood.
It is preferable to set it to g. In addition to the above components, perchloric acid or a perchloric acid compound is added, which stabilizes the plating bath and increases the deposition rate. In this case, as the perchloric acid compound, ammonium perchlorate, sodium perchlorate, potassium perchlorate, lithium perchlorate, tetraethylammonium perchlorate, tetrabutylammonium perchlorate, etc. are used. The amount of perchloric acid and perchloric acid compound used is 1 to 3
00 g/breath, particularly preferably 10-180 g/Q.
なお、このめっき浴は酸性であり、特にｐＨ０，１〜１
．５であることが好ましい。また、このめっき浴を用い
て無電解錫めっきを行なう場合。Note that this plating bath is acidic, especially at pH 0.1 to 1.
．． It is preferable that it is 5. Also, when performing electroless tin plating using this plating bath.
その温度は４０〜７５℃、特に６５〜７０℃が好ましい
。この酸性無電解錫めっき浴は安定で、不溶性錫化合物
が生成し難く、また析出速度が大きいものである。The temperature is preferably 40-75°C, particularly 65-70°C. This acidic electroless tin plating bath is stable, does not easily generate insoluble tin compounds, and has a high deposition rate.
次に、実施例により本発明を具体的に説明するが、本発
明は下記の実施例に制限されるものではない。Next, the present invention will be specifically explained with reference to examples, but the present invention is not limited to the following examples.
〔実施例１〕
常法により前処理したプリント基板に下記組成の電気ニ
ッケルめっき浴を用いてニッケルめっき皮膜を形成した
後、下記組成の無電解銅めっき浴を用いて銅めっき皮膜
を形威し、更にその上に下記組成の無電解錫めっき浴を
用いて錫めっき皮膜を形成した。[Example 1] After forming a nickel plating film on a printed circuit board pretreated by a conventional method using an electrolytic nickel plating bath with the following composition, a copper plating film was formed using an electroless copper plating bath with the following composition. Further, a tin plating film was formed thereon using an electroless tin plating bath having the following composition.
電 二・ケルめっき
組成
硫酸ニッケル ２８０ｇ／Ｑ塩化ニッケル
４０ ｇ ／ Ｑホウ酸
４０ ｇ ／ Ｑ市販−次光沢剤
工０−／立市販二次光沢剤 １ｔＱ／
１２ｐＨ４，２
めっき条件
陰極電流密度 ２Ａ／ｄａｄ”
温度 ５０℃
時間 ８分
膜厚 ３μ
朋徊逍４
組成
硫酸銅 ５ ｇ ／ Ｑロシェ
ル塩 ２５ ｇ ／ Ｑ水酸化ナトリ
ウム ５ ｇ／Ｑホルマリン
１．１０−フェナントロリン
Ｈ
めっき条件
温度 ５０℃
時間 ２０分
膜厚 ３Ｐ
都４眺吐
組成
１０−／氾
１０■／Ｑ
２
メタンスルホン酸 １００ｇ／Ｊ２チオ尿素
８０ ｇ ／ ｎ硝酸ジルコニウム
１００■／氾ｐＨ０，８
めっき条件
温度 ７０℃
時間 １０分
膜厚 １μ
以上のめっき工程において、銅めっき皮膜上に無電解錫
めっき皮膜が容易に析出した。これに対し、ニッケルめ
っき皮膜上には直接無電解錫めっき皮膜が析出しなかっ
た。Nickel sulfate 280g/Q nickel chloride 40g/Q boric acid
40 g/Q commercially available brightener
0-/ Commercially available secondary brightener 1tQ/
12 pH 4,2 Plating conditions Cathode current density 2A/dad" Temperature 50°C Time 8 minutes Film thickness 3μ Composition Copper sulfate 5 g / Q Rochelle salt 25 g / Q Sodium hydroxide 5 g / Q formalin 1.10- Phenanthroline H Plating conditions Temperature 50°C Time 20 minutes Film thickness 3P To4 composition 10-/Flood 10/Q 2 Methanesulfonic acid 100g/J2 Thiourea
80 g/n Zirconium nitrate 100■/flood pH 0.8 Plating conditions Temperature 70°C Time 10 minutes In the plating process with a film thickness of 1 μ or more, an electroless tin plating film was easily deposited on the copper plating film. In contrast, no electroless tin plating film was deposited directly on the nickel plating film.
なお、得られた無電解錫めっき皮膜の外観は均一な銀白
色を示し、顕微鏡で１１察したところ１粒子は微細で均
一であった。The appearance of the obtained electroless tin plating film showed a uniform silvery white color, and when observed under a microscope, each particle was fine and uniform.
〔実施例２〕
常法により前処理したチップコンデンサに下記ｍ戊の無
電解ニッケルめっき浴を用いてニッケルめっき皮膜を形
成した後、下記組成の無電解銅めっき浴を用いて銅めっ
き皮膜を形成し、更にその上に下記組成の無電解錫めっ
き浴を用いて錫めっき皮膜を形成した。[Example 2] After forming a nickel plating film on a chip capacitor pretreated by a conventional method using an electroless nickel plating bath having the following composition, a copper plating film was formed using an electroless copper plating bath having the following composition. Further, a tin plating film was formed thereon using an electroless tin plating bath having the following composition.
４！！電 ニッケルめっき
組成
硫酸ニッケル ３０ ｇ ／ Ｑ次亜リ
ン酸ナトリウム ２０ ｇ ／ ｎクエン酸ナト
リウム ２０ ｇ ／ Ｑグリシン
２０ ｇ ／ ＱＰｂ
１■／ＱｐＨ４，５
めっき条件
温度 ９０℃
時間 １０分
膜厚 ３゜
鮎も徨４
組成
硫酸銅
ロシェル塩
水酸化ナトリウム
ホルマリン
ｌ、１０−フェナントロリン
Ｈ
めっき条件
温度 ５０℃
時間 ２０分
膜厚 ３ｐ
魁徊眺址
組成
ホウフッ化錫（Ｓｎ”＋として）
ホウフッ酸
５ｇ／Ｑ
２５ｇ／Ｑ
５ｇ／Ｑ
１０ｄ／Ｑ
１０ｍｇ／党
２
２０ ｇ ／ Ｄ
５０ ｇ ／ Ｑ
チオ尿素 ８０ ｇ ／ １２過塩
素酸アンモニウム １０ ｇ ／ ＱｐＨ０，２
めっき条件
温度 ７０℃
時間 １０分
膜厚 １４
以上のめっき工程において、綱めっき皮膜上に無電解錫
めっき皮膜が容易に析出した。これに対し、ニッケルめ
っき皮膜上には直接無電解錫めっき皮膜が析出しなかっ
た。4! ! Nickel plating composition Nickel sulfate 30 g/Q Sodium hypophosphite 20 g/n Sodium citrate 20 g/Q Glycine
20g/QPb
1■/QpH4,5 Plating condition temperature 90℃ Time 10 minutes Film thickness 3゜Ayumo 4 Composition Copper sulfate Rochelle salt Sodium hydroxide formalin L, 10-phenanthroline H Plating condition temperature 50℃ Time 20 minutes Film thickness 3p Composition Tin borofluoride (as Sn”+) Borofluoric acid 5g/Q 25g/Q 5g/Q 10d/Q 10mg/Part 2 20g/D 50g/Q Thiourea 80g/Ammonium 12 perchlorate 10g/ QpH0,2 Plating conditions Temperature 70℃ Time 10 minutes Film thickness 14 In the above plating process, an electroless tin plating film was easily deposited on the steel plating film.On the other hand, electroless tin plating film was deposited directly on the nickel plating film. No plating film was deposited.
なお、得られた無電解錫めっき皮膜の外観は均一な銀白
色を示し、顕微鏡で観察したところ、粒子は微細で均一
であった。The appearance of the obtained electroless tin plating film was a uniform silvery white color, and when observed under a microscope, the particles were fine and uniform.
Claims (1)
ケル又はニッケル合金めっき皮膜を形成した後、その上
に銅又は銅合金めっき皮膜を形成し、次いで該銅又は銅
合金めっき皮膜上に無電解錫又は錫合金めっきを施すこ
とを特徴とする無電解錫又は錫合金めっき方法。1. After forming a nickel or nickel alloy plating film directly or through a base plating film on the object to be plated, a copper or copper alloy plating film is formed thereon, and then electroless tin or nickel alloy plating film is formed on the copper or copper alloy plating film. An electroless tin or tin alloy plating method characterized by applying tin alloy plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173229A JP2833026B2 (en) | 1989-07-05 | 1989-07-05 | Electroless tin plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173229A JP2833026B2 (en) | 1989-07-05 | 1989-07-05 | Electroless tin plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0339488A true JPH0339488A (en) | 1991-02-20 |
| JP2833026B2 JP2833026B2 (en) | 1998-12-09 |
Family
ID=15956541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1173229A Expired - Fee Related JP2833026B2 (en) | 1989-07-05 | 1989-07-05 | Electroless tin plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2833026B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10134869A (en) * | 1996-10-30 | 1998-05-22 | Yazaki Corp | Terminal material and terminal |
| JPH11135226A (en) * | 1997-10-27 | 1999-05-21 | Harness Syst Tech Res Ltd | Manufacture of fitting type connecting terminal |
| EP1230034A1 (en) | 1999-11-12 | 2002-08-14 | Enthone, Incorporated | Process for the non-galvanic tin plating of copper or copper alloys |
| JP2003147579A (en) * | 2001-11-13 | 2003-05-21 | Yazaki Corp | Terminal |
| JP2003171790A (en) * | 2001-01-19 | 2003-06-20 | Furukawa Electric Co Ltd:The | Plating material, production method therefor, and electrical and electronic part obtained by using the same |
| US6603205B2 (en) | 2000-08-01 | 2003-08-05 | Fcm Co., Ltd. | Material for electronic components, method of connecting material for electronic components, ball grid array type electronic components and method of connecting ball grid array type electronic components |
| US6759142B2 (en) | 2001-07-31 | 2004-07-06 | Kobe Steel Ltd. | Plated copper alloy material and process for production thereof |
| JP2004292944A (en) * | 2003-03-26 | 2004-10-21 | Takahide Ono | Metallic material for electronic component prevented from generation of whisker |
| JP2005251762A (en) * | 1995-12-18 | 2005-09-15 | Olin Corp | Tin coated electrical connector |
| JP2009035794A (en) * | 2007-08-03 | 2009-02-19 | Ishihara Chem Co Ltd | Electroless tin plating bath and method of electroless tin plating of electronic component |
| JP2009076473A (en) * | 1995-12-18 | 2009-04-09 | Olin Corp | Tin coated electrical connector |
| US7628274B2 (en) | 2004-12-28 | 2009-12-08 | Prairie Dog Co., Ltd. | Cake-shaped decorative accessory made of a towel in a cup |
| US7698875B2 (en) | 2004-12-28 | 2010-04-20 | Prairie Dog Co., Ltd. | Method of manufacturing a cake-shaped decorative accessory made of a towel |
| JP2017082319A (en) * | 2015-10-28 | 2017-05-18 | 国立大学法人信州大学 | Production method of cupper-cnt three-dimensional nanostructure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011107B (en) * | 2010-12-24 | 2012-07-11 | 杭州东方表面技术有限公司 | Chemical nickel-phosphorus alloy plating solution capable of obtaining high-solderability plating layer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS563694A (en) * | 1979-06-23 | 1981-01-14 | Sumitomo Electric Ind Ltd | Manufacture of copper plated aluminum terminal |
| JPS5611807A (en) * | 1979-07-10 | 1981-02-05 | Nippon Mining Co | Ironnbase alloy for lead wire material |
| JPS591666A (en) * | 1982-06-28 | 1984-01-07 | Furukawa Electric Co Ltd:The | Continuous plating method with tin or tin alloy |
| JPS61214454A (en) * | 1985-03-19 | 1986-09-24 | Nippon Mining Co Ltd | Bonding wire for semiconductor device |
| JPS62142067A (en) * | 1985-12-12 | 1987-06-25 | Hitachi Cable Ltd | Composite material formed with less alloy layer with solder |
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1989
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS563694A (en) * | 1979-06-23 | 1981-01-14 | Sumitomo Electric Ind Ltd | Manufacture of copper plated aluminum terminal |
| JPS5611807A (en) * | 1979-07-10 | 1981-02-05 | Nippon Mining Co | Ironnbase alloy for lead wire material |
| JPS591666A (en) * | 1982-06-28 | 1984-01-07 | Furukawa Electric Co Ltd:The | Continuous plating method with tin or tin alloy |
| JPS61214454A (en) * | 1985-03-19 | 1986-09-24 | Nippon Mining Co Ltd | Bonding wire for semiconductor device |
| JPS62142067A (en) * | 1985-12-12 | 1987-06-25 | Hitachi Cable Ltd | Composite material formed with less alloy layer with solder |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009076473A (en) * | 1995-12-18 | 2009-04-09 | Olin Corp | Tin coated electrical connector |
| JP2005251762A (en) * | 1995-12-18 | 2005-09-15 | Olin Corp | Tin coated electrical connector |
| JPH10134869A (en) * | 1996-10-30 | 1998-05-22 | Yazaki Corp | Terminal material and terminal |
| JPH11135226A (en) * | 1997-10-27 | 1999-05-21 | Harness Syst Tech Res Ltd | Manufacture of fitting type connecting terminal |
| EP1230034A1 (en) | 1999-11-12 | 2002-08-14 | Enthone, Incorporated | Process for the non-galvanic tin plating of copper or copper alloys |
| US6603205B2 (en) | 2000-08-01 | 2003-08-05 | Fcm Co., Ltd. | Material for electronic components, method of connecting material for electronic components, ball grid array type electronic components and method of connecting ball grid array type electronic components |
| JP4514012B2 (en) * | 2001-01-19 | 2010-07-28 | 古河電気工業株式会社 | Plating material, manufacturing method thereof, and electric / electronic parts using the same |
| JP2003171790A (en) * | 2001-01-19 | 2003-06-20 | Furukawa Electric Co Ltd:The | Plating material, production method therefor, and electrical and electronic part obtained by using the same |
| US6939621B2 (en) | 2001-07-31 | 2005-09-06 | Kobe Steel, Ltd. | Plated copper alloy material and process for production thereof |
| US6759142B2 (en) | 2001-07-31 | 2004-07-06 | Kobe Steel Ltd. | Plated copper alloy material and process for production thereof |
| JP2003147579A (en) * | 2001-11-13 | 2003-05-21 | Yazaki Corp | Terminal |
| JP2004292944A (en) * | 2003-03-26 | 2004-10-21 | Takahide Ono | Metallic material for electronic component prevented from generation of whisker |
| US7628274B2 (en) | 2004-12-28 | 2009-12-08 | Prairie Dog Co., Ltd. | Cake-shaped decorative accessory made of a towel in a cup |
| US7698875B2 (en) | 2004-12-28 | 2010-04-20 | Prairie Dog Co., Ltd. | Method of manufacturing a cake-shaped decorative accessory made of a towel |
| JP2009035794A (en) * | 2007-08-03 | 2009-02-19 | Ishihara Chem Co Ltd | Electroless tin plating bath and method of electroless tin plating of electronic component |
| JP2017082319A (en) * | 2015-10-28 | 2017-05-18 | 国立大学法人信州大学 | Production method of cupper-cnt three-dimensional nanostructure |
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|---|---|
| JP2833026B2 (en) | 1998-12-09 |
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