TW202008043A - Array substrate and manufacturing method thereof, display device using the same and manufacturing method thereof - Google Patents

Array substrate and manufacturing method thereof, display device using the same and manufacturing method thereof Download PDF

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TW202008043A
TW202008043A TW107127056A TW107127056A TW202008043A TW 202008043 A TW202008043 A TW 202008043A TW 107127056 A TW107127056 A TW 107127056A TW 107127056 A TW107127056 A TW 107127056A TW 202008043 A TW202008043 A TW 202008043A
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circuit board
pad
array substrate
edge
adhesive
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TW107127056A
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Chinese (zh)
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TWI676839B (en
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林宜欣
黃朝偉
陳正欣
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友達光電股份有限公司
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Priority to CN201811317754.4A priority patent/CN109285845B/en
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Publication of TW202008043A publication Critical patent/TW202008043A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Abstract

An array substrate including a first circuit board, a second circuit board, an adhesive layer, and at least one connection electrode is provided. The first circuit board has a first surface. The first circuit board includes at least one first pad and at least one second pad. The second circuit board has a second surface. The second circuit board includes at least one press pad. The adhesive layer is disposed between the first circuit board and the second circuit board. The first edge of the first circuit board, the second edge of the second circuit board, and the adhesive edge of the adhesive layer are substantially aligned with each other. The connection electrode extends from the first surface along the first edge, the second edge, and the adhesive edge to the second surface. The connecting electrode is electrically connected to the second pad and the pressing pad.

Description

陣列基板及其製造方法,及應用此陣列基板的顯示裝置及其製造方法Array substrate and manufacturing method thereof, and display device using the array substrate and manufacturing method thereof

本發明是有關於一種電子裝置及其製造方法,且特別是有關於一種陣列基板及其製造方法,及應用此陣列基板的顯示裝置及其製造方法。The invention relates to an electronic device and a manufacturing method thereof, and in particular to an array substrate and a manufacturing method thereof, a display device using the array substrate and a manufacturing method thereof.

在陣列基板的製程中,於一素基板(bare substrate)相對的兩個面皆形成電子元件在製程上較為複雜。並且,只要其中一個面的電子元件損壞,則不論另一個面的電子元件是否損壞,整個陣列基板即造成損壞。In the manufacturing process of the array substrate, it is more complicated to form electronic components on two opposite sides of a bare substrate. Moreover, as long as the electronic component on one side is damaged, regardless of whether the electronic component on the other side is damaged, the entire array substrate is damaged.

本發明提供一種陣列基板及其製造方法,其製造方法較為簡單,且具有較佳的製作良率。The invention provides an array substrate and a manufacturing method thereof. The manufacturing method is relatively simple, and has a better manufacturing yield.

本發明的陣列基板包括第一線路板、第二線路板、黏著層以及至少一連接電極。第一線路板具有第一表面。第一線路板包括至少一第一接墊以及至少一第二接墊。第二線路板具有第二表面。第二線路板包括至少一壓合接墊。黏著層位於第一線路板與第二線路板之間。第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣基本上彼此切齊。連接電極從第一線路板的第一表面沿第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣延伸至第二線路板的第二表面。連接電極電性連接於第二接墊與壓合接墊。The array substrate of the present invention includes a first circuit board, a second circuit board, an adhesive layer, and at least one connection electrode. The first circuit board has a first surface. The first circuit board includes at least one first pad and at least one second pad. The second circuit board has a second surface. The second circuit board includes at least one compression pad. The adhesive layer is located between the first circuit board and the second circuit board. The first edge of the first circuit board, the second edge of the second circuit board and the adhesive edge of the adhesive layer are substantially aligned with each other. The connection electrode extends from the first surface of the first circuit board along the first edge of the first circuit board, the second edge of the second circuit board, and the adhesive edge of the adhesive layer to the second surface of the second circuit board. The connection electrode is electrically connected to the second pad and the compression pad.

本發明的陣列基板的製造方法包括以下步驟。提供第一線路板。第一線路板包括至少一第一接墊以及至少一第二接墊。提供第二線路板。第二線路板包括至少一壓合接墊。進行黏合製程,以形成黏合第一線路板與第二線路板的黏著層。進行切割製程,以切割第一線路板、黏著層以及第二線路板的至少其中之一。於進行切割製程之後,形成至少一連接電極,以電性連接第二接墊與壓合接墊。連接電極至少部分覆蓋第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣,且第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣基本上彼此切齊。The method for manufacturing an array substrate of the present invention includes the following steps. Provide the first circuit board. The first circuit board includes at least one first pad and at least one second pad. Provide a second circuit board. The second circuit board includes at least one compression pad. The bonding process is performed to form an adhesive layer for bonding the first circuit board and the second circuit board. A cutting process is performed to cut at least one of the first circuit board, the adhesive layer and the second circuit board. After the cutting process is performed, at least one connecting electrode is formed to electrically connect the second pad and the pressing pad. The connection electrode at least partially covers the first edge of the first circuit board, the second edge of the second circuit board and the adhesive edge of the adhesive layer, and the first edge of the first circuit board, the second edge of the second circuit board and the adhesive layer The glued edges are basically aligned with each other.

基於上述,本發明的陣列基板是藉由黏著層將第一線路板與第二線路板彼此黏合。因此,陣列基板的製造方法較為簡單。並且,可以在將第一線路板與第二線路板彼此黏合前確認第一線路板與第二線路板具有良好的功能。因此,可以提升陣列基板的製作良率。另外,用於將第一線路板與第二線路板彼此電性連接的連接電極是形成在第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣上,而第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣上可以藉由切割製程而基本上彼此切齊。因此,陣列基板的製造方法較為簡單,且可以提升陣列基板的製作良率。Based on the above, the array substrate of the present invention bonds the first circuit board and the second circuit board to each other through the adhesive layer. Therefore, the manufacturing method of the array substrate is relatively simple. Moreover, it can be confirmed that the first circuit board and the second circuit board have a good function before bonding the first circuit board and the second circuit board to each other. Therefore, the manufacturing yield of the array substrate can be improved. In addition, connection electrodes for electrically connecting the first circuit board and the second circuit board to each other are formed on the first edge of the first circuit board, the second edge of the second circuit board, and the adhesive edge of the adhesive layer, and The first edge of the first circuit board, the second edge of the second circuit board and the adhesive edge of the adhesive layer can be substantially aligned with each other by a cutting process. Therefore, the manufacturing method of the array substrate is relatively simple, and the manufacturing yield of the array substrate can be improved.

本發明提供一種顯示裝置及其製造方法,其製造方法較為簡單,且具有較佳的製作良率。The invention provides a display device and a manufacturing method thereof. The manufacturing method is relatively simple and has a good manufacturing yield.

本發明的顯示裝置包括前述的陣列基板以及至少一微型發光元件。微型發光元件配置於陣列基板上。微型發光元件電性連接於第一接墊以及第二接墊。The display device of the present invention includes the aforementioned array substrate and at least one micro light-emitting element. The micro light emitting element is arranged on the array substrate. The micro light-emitting device is electrically connected to the first pad and the second pad.

本發明的顯示裝置的製造方法包括以下步驟。提供前述的陣列基板。配置至少一微型發光元件於陣列基板上。微型發光元件電性連接於第一接墊以及第二接墊。The manufacturing method of the display device of the present invention includes the following steps. The aforementioned array substrate is provided. At least one miniature light emitting element is arranged on the array substrate. The micro light-emitting device is electrically connected to the first pad and the second pad.

基於上述,本發明的顯示裝置是由本發明的陣列基板所構成。因此,顯示裝置的製造方法也可以較為簡單,且具有較佳的製作良率。Based on the above, the display device of the present invention is constituted by the array substrate of the present invention. Therefore, the manufacturing method of the display device may also be relatively simple and have a better manufacturing yield.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。如本領域技術人員將認識到的,可以以各種不同的方式修改所描述的實施例,而不脫離本發明的精神或範圍。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

在附圖中,為了清楚起見,放大了各元件等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在“另一元件上”、或“連接到另一元件”、“重疊於另一元件”時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或 “直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電連接。In the drawings, the thickness of each element and the like are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on another element”, or “connected to another element”, “overlapping another element”, it can be directly on the other element On or connected to another element, or an intermediate element may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections.

應當理解,儘管術語“第一”、“第二”、“第三”等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的“第一元件”、“部件”、“區域”、“層”、或“部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, and/or Or part should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Accordingly, the "first element", "component", "region", "layer", or "portion" discussed below may be referred to as the second element, component, region, layer, or section without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式“一”、“一個”和“該”旨在包括複數形式,包括“至少一”或“至少一個”。“或”表示“及/或”。如本文所使用的,術語“及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語“包括”及/或“包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, unless the content clearly indicates, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one" or "at least one". "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "including" and/or "comprising" designate the described features, regions, wholes, steps, operations, presence of elements and/or components, but do not exclude one or more The presence or addition of other features, regions as a whole, steps, operations, elements, components, and/or combinations thereof.

此外,諸如“下”或“底部”和“上”或“頂部”的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的“下”側的元件將被定向在其他元件的“上”側。因此,示例性術語“下”可以包括“下”和“上”的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件“下方”或“下方”的元件將被定向為在其它元件 “上方”。因此,示例性術語“下面”或“下面”可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship between one element and another element, as shown. It should be understood that relative terms are intended to include different orientations of the device than those shown in the figures. For example, if the device in one drawing is turned over, the element described as being on the "lower" side of the other element will be oriented on the "upper" side of the other element. Thus, the exemplary term "lower" may include "lower" and "upper" orientations, depending on the particular orientation of the drawings. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.

本文使用的“約”、“實質上”、或“近似”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。As used herein, "about", "substantially", or "approximately" includes the stated value and the average value within an acceptable deviation range for a particular value determined by one of ordinary skill in the art, taking into account the measurements and A certain amount of measurement-related errors (ie, measurement system limitations). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%.

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此,可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此,本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀,而是包括例如由製造導致的形狀偏差。例如,示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外,所示的銳角可以是圓的。因此,圖中所示的區域本質上是示意性的,並且它們的形狀不是旨在示出區域的精確形狀,並且不是旨在限制權利要求的範圍。Exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, it is possible to anticipate a change in the shape of the graph as a result of, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments described herein should not be construed as being limited to the specific shapes of the regions as shown herein, but include deviations in shapes caused by manufacturing, for example. For example, an area shown or described as flat may generally have rough and/or non-linear characteristics. In addition, the acute angle shown may be round. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the precise shapes of the regions, and are not intended to limit the scope of the claims.

圖1A是依照本發明的第一實施例的一種陣列基板的製造方法的流程圖。圖1B至圖1H是依照本發明的第一實施例的一種陣列基板的製造方法的部分剖面示意圖。圖1I是依照本發明的第一實施例的一種陣列基板的部分製造方法的部分上視示意圖。圖1J是依照本發明的第一實施例的一種陣列基板的部分製造方法的立體示意圖。FIG. 1A is a flowchart of a method for manufacturing an array substrate according to the first embodiment of the present invention. 1B to 1H are schematic partial cross-sectional views of a method of manufacturing an array substrate according to a first embodiment of the invention. FIG. 11 is a partial schematic top view of a partial manufacturing method of an array substrate according to the first embodiment of the present invention. 1J is a schematic perspective view of a partial manufacturing method of an array substrate according to the first embodiment of the present invention.

請參照圖1A與圖1B。在步驟S1中,提供第一線路板110,第一線路板110包括至少一第一接墊113以及至少一第二接墊114。舉例而言,第一線路板110具有彼此相對的第一表面110a及第三表面110b。第一線路板110可以包括第一基板111、元件層112、第一接墊113及第二接墊114。元件層112位於第一基板111上,第一接墊113以及第二接墊114位於元件層112上,且第一接墊113與第二接墊114可以與其他的電子元件(如:主動元件T或導線115)電性連接。Please refer to FIGS. 1A and 1B. In step S1, a first circuit board 110 is provided. The first circuit board 110 includes at least one first pad 113 and at least one second pad 114. For example, the first circuit board 110 has a first surface 110a and a third surface 110b opposite to each other. The first circuit board 110 may include a first substrate 111, an element layer 112, a first pad 113, and a second pad 114. The device layer 112 is located on the first substrate 111, the first pad 113 and the second pad 114 are located on the device layer 112, and the first pad 113 and the second pad 114 can be combined with other electronic devices (such as active devices) T or wire 115) electrically connected.

第一基板111的材質可以為玻璃、石英、有機聚合物或其他適宜被切割的絕緣材質,於本發明中並不加以限制。The material of the first substrate 111 may be glass, quartz, organic polymer, or other insulating materials suitable for cutting, which is not limited in the present invention.

元件層112可以包括主動元件T、被動元件(未繪示)或對應的導線(如:掃描線、資料線或其他類似的訊號線)。舉例而言,元件層112可以包括至少一主動元件T,其中第一接墊113與主動元件T電性連接,以接收主動元件T所傳遞的對應電壓。主動元件T包括源極S、汲極D、閘極G以及通道層CH。閘極G可以與掃描線(未繪示)電性連接。源極S可以與資料線(未繪示)電性連接。在本實施例中,主動元件T例如為低溫多晶矽薄膜電晶體(Low temperture poly Si thin film transistor;LTPS TFT),於本發明中並不加以限制。The device layer 112 may include an active device T, a passive device (not shown), or corresponding wires (such as scan lines, data lines, or other similar signal lines). For example, the device layer 112 may include at least one active device T, wherein the first pad 113 is electrically connected to the active device T to receive the corresponding voltage transmitted by the active device T. The active device T includes a source S, a drain D, a gate G, and a channel layer CH. The gate G can be electrically connected to the scanning line (not shown). The source S can be electrically connected to the data line (not shown). In this embodiment, the active element T is, for example, a low temperture poly Si thin film transistor (LTPS TFT), which is not limited in the present invention.

另外,在圖1B的第一線路板110中,僅示例性地繪示了一個主動元件T、一個第一接墊113及一個第二接墊114,但本發明對於第一線路板110中的主動元件T、第一接墊113及/或第二接墊114的個數並不加以限制。舉例而言,如圖1I所示,其中圖1I可以是圖1B所繪示的第一線路板110的部分上視示意圖,在圖1I中,第一線路板110可以包括多個第一接墊113及多個第二接墊114,且各個第一接墊113可以與元件層112中對應的主動元件T電性連接。In addition, in the first circuit board 110 of FIG. 1B, only one active element T, one first pad 113, and one second pad 114 are illustrated by way of example, but the present invention is The number of the active device T, the first pad 113 and/or the second pad 114 is not limited. For example, as shown in FIG. 1I, where FIG. 1I can be a partial top view of the first circuit board 110 shown in FIG. 1B, in FIG. 1I, the first circuit board 110 can include a plurality of first pads 113 and a plurality of second pads 114, and each first pad 113 may be electrically connected to the corresponding active device T in the device layer 112.

另外,在後續的圖式中,為了清楚表示,可能省略繪示了元件層112中全部或部分的構件(如:主動元件T)。In addition, in the subsequent drawings, for the sake of clarity, all or part of the components (such as the active component T) in the element layer 112 may be omitted.

在本實施例中,可以於第一線路板110的第一表面110a上形成第一保護層120。在後續的製程中,位於第一表面110a上的第一接墊113以及多個第二接墊114可以藉由第一保護層120的保護而降低受損的可能。In this embodiment, the first protective layer 120 may be formed on the first surface 110 a of the first circuit board 110. In the subsequent process, the first pads 113 and the plurality of second pads 114 on the first surface 110a can be protected by the first protective layer 120 to reduce the possibility of damage.

在本實施例中,元件層112內的元件(如:主動元件T)、第一接墊113、第二接墊114、導線115及/或第一保護層120(若有)可以藉由一般的半導體或封裝製程所形成,故於此不加以贅述。In this embodiment, the element (eg, active element T) in the element layer 112, the first pad 113, the second pad 114, the wire 115, and/or the first protective layer 120 (if any) can be The semiconductor or packaging process is formed, so it will not be repeated here.

請參照圖1A與圖1C。在步驟S2中,提供第二線路板130,第二線路板130包括至少一壓合接墊134。舉例而言,第二線路板130具有彼此相對的第二表面130a及第四表面130b。第二線路板130可以包括第二基板131、線路層132、絕緣層133及壓合接墊134。Please refer to FIGS. 1A and 1C. In step S2, a second circuit board 130 is provided, and the second circuit board 130 includes at least one compression pad 134. For example, the second circuit board 130 has a second surface 130a and a fourth surface 130b opposite to each other. The second circuit board 130 may include a second substrate 131, a circuit layer 132, an insulating layer 133, and a pressure bonding pad 134.

第二基板131的材質可以為玻璃、石英、有機聚合物或其他適宜被切割的絕緣材質,於本發明中並不加以限制。The material of the second substrate 131 may be glass, quartz, organic polymer, or other insulating materials suitable for cutting, which is not limited in the present invention.

線路層132及絕緣層133位於第二基板131上。壓合接墊134可以貫穿最遠離第二基板131的絕緣層133,以與線路層132電性連接。在本實施例中,壓合接墊134例如為凸塊底金屬(Under Bump Metallurgy;UBM),但本發明不限於此。The circuit layer 132 and the insulating layer 133 are located on the second substrate 131. The bonding pad 134 may penetrate the insulating layer 133 farthest from the second substrate 131 to be electrically connected to the circuit layer 132. In this embodiment, the compression pad 134 is, for example, UBM (Under Bump Metallurgy), but the invention is not limited thereto.

另外,在圖1C的第二線路板130中,僅示例性地繪示了一個線路層132、一個絕緣層133及一個壓合接墊134,但本發明對於第二線路板130中的線路層132、絕緣層133及/或壓合接墊134的個數並不加以限制。In addition, in the second circuit board 130 of FIG. 1C, only one circuit layer 132, one insulating layer 133, and one pressure bonding pad 134 are only exemplarily shown, but the present invention is directed to the circuit layer in the second circuit board 130 132, the number of insulating layers 133 and/or pressure bonding pads 134 is not limited.

在本實施例中,可以於第二線路板130的第二表面130a上形成第二保護層140。在後續的製程中,位於第二表面130a上的壓合接墊134可以藉由第二保護層140的保護而降低受損的可能。In this embodiment, the second protective layer 140 may be formed on the second surface 130a of the second circuit board 130. In the subsequent process, the bonding pad 134 on the second surface 130a can be protected by the second protective layer 140 to reduce the possibility of damage.

在本實施例中,線路層132、絕緣層133、壓合接墊134及/或第二保護層140(若有)可以藉由一般的半導體或封裝製程所形成,故於此不加以贅述。In this embodiment, the circuit layer 132, the insulating layer 133, the bonding pad 134, and/or the second protective layer 140 (if any) can be formed by a general semiconductor or packaging process, so they will not be repeated here.

請參照圖1A、圖1D與圖1J。在步驟S3中,進行一黏合製程,以形成黏合第一線路板110與第二線路板130的黏著層150。黏著層150的材質例如可以是樹脂材料,但本發明不限於此。Please refer to FIGS. 1A, 1D and 1J. In step S3, a bonding process is performed to form an adhesive layer 150 for bonding the first circuit board 110 and the second circuit board 130. The material of the adhesive layer 150 may be a resin material, for example, but the invention is not limited thereto.

舉例而言,如圖1J所示,將第一線路板110與第二線路板130黏合的方式例如是先將如1C所示的第二線路板130上下翻轉(upside down)。然後,將未固化的黏著材料151(如:樹脂或膠材)塗佈於第二線路板130的第四表面130b上。接著,使第一線路板110的第三表面110b上及第二線路板130的第四表面130b分別接觸黏著材料151的相對兩側。之後,進行固化製程使得黏著材料151固化,以形成如圖1D所示,具有以黏著層150將第一線路板110與第二線路板130相黏合的黏合結構101。For example, as shown in FIG. 1J, the method of bonding the first circuit board 110 and the second circuit board 130 is, for example, first to upside down the second circuit board 130 shown in 1C. Then, the uncured adhesive material 151 (such as resin or glue) is coated on the fourth surface 130b of the second circuit board 130. Next, the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 are respectively in contact with opposite sides of the adhesive material 151. Afterwards, a curing process is performed to cure the adhesive material 151 to form an adhesive structure 101 having the first circuit board 110 and the second circuit board 130 adhered by the adhesive layer 150 as shown in FIG. 1D.

在其他未繪示的實施例中,也可以將如1B所示的第一線路板110上下翻轉。然後,將未固化的黏著材料151塗佈於第一線路板110的第三表面110b上。之後,藉由類似的方式以形成具有以黏著層150將第一線路板110與第二線路板130相黏合的黏合結構101。In other embodiments not shown, the first circuit board 110 as shown in FIG. 1B can also be turned upside down. Then, the uncured adhesive material 151 is coated on the third surface 110b of the first circuit board 110. Then, in a similar manner, an adhesive structure 101 having the first circuit board 110 and the second circuit board 130 bonded with the adhesive layer 150 is formed.

在其他可行的實施例中,也可以先將其他類型的黏著材料(如:雙面膠)形成於第一線路板110的第三表面110b上及/或第二線路板130的第四表面130b上。然後,將第一線路板110或第二線路板130上下翻轉。之後,使第一線路板110的第三表面110b上及第二線路板130的第四表面130b彼此面對面(face to face)貼合,而使第一線路板110的第三表面110b上與第二線路板130的第四表面130b之間的黏著材料形成黏著層150,以形成具有以黏著層150將第一線路板110與第二線路板130相黏合的黏合結構101。In other feasible embodiments, other types of adhesive materials (such as double-sided tape) may be formed on the third surface 110b of the first circuit board 110 and/or the fourth surface 130b of the second circuit board 130 first on. Then, the first circuit board 110 or the second circuit board 130 is turned upside down. After that, the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 are face-to-face bonded to each other, so that the third surface 110b of the first circuit board 110 is The adhesive material between the fourth surfaces 130b of the two circuit boards 130 forms an adhesive layer 150 to form an adhesive structure 101 having the first circuit board 110 and the second circuit board 130 adhered by the adhesive layer 150.

在本實施例中,黏著層150的厚度150h小於或等於10微米(micrometer;μm),且大於0微米。如此一來,可以使黏著層150適宜被切割。並且,在後續的製程(如:將黏合結構101翻轉、傳送或其他類似的製程)中,黏著層150的厚度150h小於或等於10微米可以降低第一線路板110與第二線路板130之間的剪力(shear force),而可以降低第一線路板110及/或第二線路板130損壞的可能。In this embodiment, the thickness 150h of the adhesive layer 150 is less than or equal to 10 microns (micrometer; μm) and greater than 0 microns. In this way, the adhesive layer 150 can be suitably cut. In addition, in subsequent processes (such as flipping, transferring, or other similar processes of the adhesive structure 101), the thickness 150h of the adhesive layer 150 is less than or equal to 10 microns to reduce the distance between the first circuit board 110 and the second circuit board 130 The shear force can reduce the possibility of damage to the first circuit board 110 and/or the second circuit board 130.

請參照圖1A、圖1D至圖1F。在步驟S4中,進行一切割製程,以切割第一線路板110、黏著層150以及第二線路板130的至少其中之一。舉例而言,如圖1E所示,可以藉由切割裝置90,以雷射切割、水刀切割或其他適宜的切割方式,對如1D所示的黏合結構101(繪示於圖1D)的邊緣區R進行切割,以切割第一線路板110的第一基板111、黏著層150以及第二線路板130的第二基板131的至少其中之一。Please refer to FIGS. 1A, 1D to 1F. In step S4, a cutting process is performed to cut at least one of the first circuit board 110, the adhesive layer 150, and the second circuit board 130. For example, as shown in FIG. 1E, the edge of the adhesive structure 101 shown in FIG. 1D (shown in FIG. 1D) can be cut by laser cutting, water jet cutting, or other suitable cutting methods by the cutting device 90. The region R is cut to cut at least one of the first substrate 111 of the first circuit board 110, the adhesive layer 150, and the second substrate 131 of the second circuit board 130.

在一些實施例中,於進行前述的切割製程之後,可以進一步地對第一線路板110的第一邊緣110c(繪示於圖1F)、第二線路板130的第二邊緣130c(繪示於圖1F)以及黏著層150的黏著邊緣150c(繪示於圖1F)進行微蝕刻(micro-etching)、研磨(polishing)或其他適宜的平整化製程,以提升由第一基板111的第一邊緣110c的表面、第二基板131的第二邊緣130c的表面及黏著層150的黏著邊緣150c的表面所構成的表面的平整度(flatness)。In some embodiments, after the foregoing cutting process, the first edge 110c of the first circuit board 110 (shown in FIG. 1F) and the second edge 130c of the second circuit board 130 (shown in FIG. 1F) and the adhesive edge 150c of the adhesive layer 150 (shown in FIG. 1F) are subjected to micro-etching, polishing, or other suitable planarization processes to enhance the first edge of the first substrate 111 The flatness of the surface formed by the surface of 110c, the surface of the second edge 130c of the second substrate 131, and the surface of the adhesive edge 150c of the adhesive layer 150.

請參照圖1F,於進行切割製程之後,第一基板111的第一邊緣110c、第二基板131的第二邊緣130c以及黏著層150的黏著邊緣150c基本上彼此切齊,且位於第一基板111的第一邊緣110c的表面、位於第二基板131的第二邊緣130c的表面以及位於黏著層150的黏著邊緣150c的表面可以彼此共面(coplaner)而構成一平整面FS。1F, after the dicing process is performed, the first edge 110c of the first substrate 111, the second edge 130c of the second substrate 131, and the adhesive edge 150c of the adhesive layer 150 are substantially aligned with each other and are located on the first substrate 111 The surface of the first edge 110c, the surface of the second edge 130c of the second substrate 131, and the surface of the adhesive edge 150c of the adhesive layer 150 may be coplanar with each other to form a flat surface FS.

當然,在微觀尺寸(如:奈米尺寸或原子尺寸)下,任何物體的表面皆會有粗糙度,僅是相對大小的問題。因此,只要於進行切割製程之後,位於第一基板111的第一邊緣110c的表面、位於第二基板131的第二邊緣130c的表面以及位於黏著層150的黏著邊緣150c的表面所對應構成的一平面(如:一數學上理想的虛擬平整面),而在前述平面的法線方向上,位於第一基板111的第一邊緣110c的表面、位於第二基板131的第二邊緣130c的表面以及位於黏著層150的黏著邊緣150c的表面相對於前述平面的最高點和最低點之間的差值(即,前述平面的平整度)小於後續形成於其上的連接電極160(繪示於圖1H)最小厚度160h(繪示於圖1H),則為本文中所定義的平整面的均等範圍所涵蓋。Of course, at the microscopic size (eg, nanometer size or atomic size), the surface of any object will have roughness, which is only a matter of relative size. Therefore, as long as the cutting process is performed, the surface located on the first edge 110c of the first substrate 111, the surface located on the second edge 130c of the second substrate 131, and the surface located on the adhesive edge 150c of the adhesive layer 150 correspond to A plane (eg, a mathematically ideal virtual flat surface), and in the normal direction of the aforementioned plane, the surface located on the first edge 110c of the first substrate 111 and the surface located on the second edge 130c of the second substrate 131 and The difference between the highest point and the lowest point of the surface of the adhesive edge 150c of the adhesive layer 150 relative to the aforementioned plane (ie, the flatness of the aforementioned plane) is smaller than the subsequent connection electrode 160 formed thereon (shown in FIG. 1H ) The minimum thickness of 160h (shown in Figure 1H) is covered by the equal range of the flat surface defined in this article.

請參照圖1G。在一些實施例中,可以藉由蝕刻、機械鑽孔、雷射鑽孔或其他適宜的方式,以在第一保護層120(若有)上形成開口120a,且開口120a可以暴露出部分的導線115或其他可以與第二接墊114電性連接的一導電接墊。或是,可以藉由蝕刻、機械鑽孔、雷射鑽孔或其他適宜的方式,以在第二保護層140(若有)上形成開口140a,且開口140a可以暴露出部分的線路層132或其他可以與線路層132電性連接的另一導電接墊。Please refer to Figure 1G. In some embodiments, an opening 120a may be formed in the first protective layer 120 (if any) by etching, mechanical drilling, laser drilling, or other suitable methods, and the opening 120a may expose part of the wire 115 or another conductive pad electrically connected to the second pad 114. Or, an opening 140a can be formed in the second protective layer 140 (if any) by etching, mechanical drilling, laser drilling or other suitable methods, and the opening 140a can expose part of the circuit layer 132 or Another conductive pad that can be electrically connected to the circuit layer 132.

請參照圖1H,形成連接電極160,以電性連接第二接墊114與壓合接墊134,連接電極160至少部分覆蓋於第一基板111的第一邊緣110c、第二基板131的第二邊緣130c以及黏著層150的黏著邊緣150c。舉例而言,例如可以藉由印刷(如:網印)、鍍覆(如:濺鍍、蒸鍍)或其他適宜的方式,將導電材料至少形成在第一基板111的第一邊緣110c的表面、第二基板131的第二邊緣130c的表面及黏著層150的黏著邊緣150c的表面所構成的表面上,以使第二接墊114可以與對應的壓合接墊134電性連接。Referring to FIG. 1H, a connection electrode 160 is formed to electrically connect the second pad 114 and the compression pad 134. The connection electrode 160 at least partially covers the first edge 110c of the first substrate 111 and the second edge of the second substrate 131 The edge 130c and the adhesive edge 150c of the adhesive layer 150. For example, the conductive material may be formed at least on the surface of the first edge 110c of the first substrate 111 by printing (eg, screen printing), plating (eg, sputtering, evaporation) or other suitable methods 1. The surface formed by the surface of the second edge 130c of the second substrate 131 and the surface of the adhesive edge 150c of the adhesive layer 150, so that the second pad 114 can be electrically connected to the corresponding compression pad 134.

在一些實施例中,用於形成連接電極160的導電材料可以進一步地部分覆蓋於第一線路板110的第一表面110a上,且填入第一保護層120的多個開口120a,以形成第一導通孔121。如此一來,可使第二接墊114可以藉由對應的第一導通孔121及對應的連接電極160而與對應的壓合接墊134電性連接。In some embodiments, the conductive material used to form the connection electrode 160 may further partially cover the first surface 110 a of the first circuit board 110 and fill in the plurality of openings 120 a of the first protective layer 120 to form the first One through hole 121. In this way, the second pad 114 can be electrically connected to the corresponding compression pad 134 through the corresponding first via 121 and the corresponding connection electrode 160.

在一些實施例中,用於形成連接電極160的導電材料可以進一步地部分覆蓋於第二線路板130的第二表面130a上,且填入第二保護層140的多個開口140a,以形成第二導通孔141。如此一來,可使第二接墊114可以藉由對應的連接電極160及對應的第二導通孔141而與對應的壓合接墊134電性連接。In some embodiments, the conductive material used to form the connection electrode 160 may further partially cover the second surface 130a of the second circuit board 130, and fill a plurality of openings 140a of the second protective layer 140 to form the first二通孔孔141. In this way, the second pad 114 can be electrically connected to the corresponding compression pad 134 through the corresponding connection electrode 160 and the corresponding second via hole 141.

經過上述製程後即可大致上完成本實施例之陣列基板100的製作。上述之陣列基板100包括第一線路板110、第二線路板130、黏著層150以及至少一連接電極160。第一線路板110具有第一表面110a,且第一線路板110包括至少一第一接墊113以及至少一第二接墊114。第二線路板130具有第二表面130a,且第二線路板130包括至少一壓合接墊134。黏著層150位於第一線路板110與第二線路板130之間。第一線路板110的第一邊緣110c、第二線路板130的第二邊緣130c以及黏著層150的黏著邊緣150c基本上彼此切齊。連接電極160可以從第一線路板110的第一表面110a沿第一線路板110的第一邊緣110c、第二線路板130的第二邊緣130c以及黏著層150的黏著邊緣150c延伸至第二線路板130的第二表面130a。連接電極160電性連接於第二接墊114與壓合接墊134。After the above process, the fabrication of the array substrate 100 of this embodiment can be substantially completed. The above-mentioned array substrate 100 includes a first circuit board 110, a second circuit board 130, an adhesive layer 150, and at least one connection electrode 160. The first circuit board 110 has a first surface 110a, and the first circuit board 110 includes at least one first pad 113 and at least one second pad 114. The second circuit board 130 has a second surface 130a, and the second circuit board 130 includes at least one compression pad 134. The adhesive layer 150 is located between the first circuit board 110 and the second circuit board 130. The first edge 110c of the first circuit board 110, the second edge 130c of the second circuit board 130, and the adhesive edge 150c of the adhesive layer 150 are substantially aligned with each other. The connection electrode 160 may extend from the first surface 110a of the first circuit board 110 along the first edge 110c of the first circuit board 110, the second edge 130c of the second circuit board 130, and the adhesive edge 150c of the adhesive layer 150 to the second circuit The second surface 130a of the board 130. The connection electrode 160 is electrically connected to the second pad 114 and the compression pad 134.

在本實施例中,第一線路板110的第一邊緣110c的表面、第二線路板130的第二邊緣130c的表面以及黏著層150的黏著邊緣150c的表面構成一平整面FS,且連接電極160至少部分覆蓋於平整面上。In this embodiment, the surface of the first edge 110c of the first circuit board 110, the surface of the second edge 130c of the second circuit board 130, and the surface of the adhesive edge 150c of the adhesive layer 150 form a flat surface FS, and are connected to the electrodes 160 is at least partially covered on a flat surface.

圖2是依照本發明的第二實施例的一種陣列基板的部分剖面示意圖。本實施例的陣列基板200與第一實施例的陣列基板100類似,差別在於:陣列基板100更包括電極保護層270。電極保護層270覆蓋連接電極160上,而可以在後續的製程(如:將陣列基板200翻轉、傳送或其他類似的製程)中可以降低連接電極160受損的可能。2 is a schematic partial cross-sectional view of an array substrate according to a second embodiment of the invention. The array substrate 200 of this embodiment is similar to the array substrate 100 of the first embodiment, except that the array substrate 100 further includes an electrode protection layer 270. The electrode protection layer 270 covers the connection electrode 160, and may reduce the possibility of damage to the connection electrode 160 in subsequent processes (eg, flipping, transferring, or other similar processes of the array substrate 200).

在本實施例中,可以在形成連接電極160之後,藉由一般的半導體或封裝製程形成由聚合物材料、氧化矽層、氮化矽層、氮氧化矽層或是由其他適宜的介電材料所形成的電極保護層270,故於此不加以贅述。In this embodiment, after forming the connection electrode 160, a polymer material, a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or other suitable dielectric materials may be formed by a general semiconductor or packaging process The formed electrode protection layer 270 will not be repeated here.

圖3是依照本發明的第三實施例的一種陣列基板的部分剖面示意圖。本實施例的陣列基板300與第二實施例的陣列基板200類似,差別在於:第一保護層120具有對應於第一接墊113的第一開口120b以及對應於第二接墊114的第二開口120c,且第二保護層140具有對應於壓合接墊134的個壓合開口140b。3 is a schematic partial cross-sectional view of an array substrate according to a third embodiment of the invention. The array substrate 300 of this embodiment is similar to the array substrate 200 of the second embodiment, except that the first protective layer 120 has a first opening 120b corresponding to the first pad 113 and a second corresponding to the second pad 114 The opening 120c, and the second protective layer 140 have a plurality of pressing openings 140b corresponding to the pressing pads 134.

第一開口120b及/或第二開口120c可以藉由蝕刻、機械鑽孔、雷射鑽孔或其他適宜的方式形成,且本發明對於開口120a、第一開口120b及第二開口120c的形成順序並不加以限制。舉例而言,第一開口120b及/或第二開口120c可以在與開口120a相同的製程中形成。The first opening 120b and/or the second opening 120c can be formed by etching, mechanical drilling, laser drilling, or other suitable methods, and the order of forming the opening 120a, the first opening 120b, and the second opening 120c of the present invention No restrictions. For example, the first opening 120b and/or the second opening 120c may be formed in the same process as the opening 120a.

壓合開口140b可以藉由蝕刻、機械鑽孔、雷射鑽孔或其他適宜的方式形成,且本發明對於壓合開口140b及開口140a的形成順序並不加以限制。舉例而言,壓合開口140b可以在與開口140a相同的製程中形成。The pressing opening 140b may be formed by etching, mechanical drilling, laser drilling, or other suitable methods, and the present invention does not limit the order of forming the pressing opening 140b and the opening 140a. For example, the press-fit opening 140b may be formed in the same process as the opening 140a.

圖4是依照本發明的第四實施例的一種陣列基板的部分製造方法的立體示意圖。具體而言,圖4可以為圖1A中的步驟S3中,所進行的黏合製程的立體示意圖。4 is a schematic perspective view of a partial manufacturing method of an array substrate according to a fourth embodiment of the invention. Specifically, FIG. 4 may be a schematic perspective view of the bonding process performed in step S3 in FIG. 1A.

在本實施例中,將第一線路板110與第二線路板130黏合的方式例如是先將如1C所示的第二線路板130上下翻轉。然後在第二線路的第四表面130b上形成框膠452後,將未固化的黏著材料453塗佈於第二線路板130的第四表面130b上且於框膠452所圍繞的範圍內。接著,使第一線路板110的第三表面110b上及第二線路板130的第四表面130b分別接觸黏著材料453的相對兩側。之後,進行固化製程使得黏著材料453固化,以形成類似於如圖1D所示的黏合結構101。In this embodiment, the method of bonding the first circuit board 110 and the second circuit board 130 is, for example, to turn the second circuit board 130 as shown in FIG. 1C up and down first. After forming the sealant 452 on the fourth surface 130b of the second circuit, the uncured adhesive material 453 is coated on the fourth surface 130b of the second circuit board 130 and within the range surrounded by the sealant 452. Next, the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 are respectively in contact with opposite sides of the adhesive material 453. After that, a curing process is performed to cure the adhesive material 453 to form an adhesive structure 101 similar to that shown in FIG. 1D.

圖5是依照本發明的第五實施例的一種陣列基板的部分製造方法的立體示意圖。具體而言,圖5可以為圖1A中的步驟S3中,所進行的黏合製程的立體示意圖。5 is a perspective schematic view of a partial manufacturing method of an array substrate according to a fifth embodiment of the invention. Specifically, FIG. 5 can be a schematic perspective view of the bonding process performed in step S3 in FIG. 1A.

在本實施例中,將第一線路板110與第二線路板130黏合的方式例如是先將如1C所示的第二線路板130上下翻轉。然後在第二線路板130的第四表面130b上形成框膠552後。接著,於一低氣壓(如:低於1大氣壓)的環境下,使第一線路板110的第三表面110b上及第二線路板130的第四表面130b分別接觸框膠552的相對兩側。之後,於室壓(如:1大氣壓)的環境,可以藉由框膠552及外界的大氣壓力使第一線路板110的第三表面110b與第二線路板130的第四表面130b分別與框膠的相對兩側密合,以形成類似於如圖1D所示的黏合結構101。In this embodiment, the method of bonding the first circuit board 110 and the second circuit board 130 is, for example, to turn the second circuit board 130 as shown in FIG. 1C up and down first. After forming the sealant 552 on the fourth surface 130b of the second circuit board 130. Next, in an environment with a low pressure (eg, less than 1 atmosphere), the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 are respectively in contact with the opposite sides of the sealant 552 . Afterwards, under the environment of room pressure (eg, 1 atmosphere), the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 can be respectively The opposite sides of the glue are tightly bonded to form an adhesive structure 101 similar to that shown in FIG. 1D.

圖6是依照本發明的第六實施例的一種陣列基板的部分製造方法的立體示意圖。具體而言,圖6可以為圖1A中的步驟S3中,所進行的黏合製程的立體示意圖。6 is a schematic perspective view of a partial manufacturing method of an array substrate according to a sixth embodiment of the invention. Specifically, FIG. 6 may be a perspective schematic view of the bonding process performed in step S3 in FIG. 1A.

在本實施例中,將第一線路板110與第二線路板130黏合的方式例如是先將如1C所示的第二線路板130上下翻轉。然後在第二線路板130的第四表面130b上形成框膠652後,於框膠652所圍繞的範圍內形成黏著材料654(如:雙面膠條)。接著,使第一線路板110的第三表面110b上及第二線路板130的第四表面130b分別接觸框膠652及/或黏著材料654的相對兩側,以形成類似於如圖1D所示的黏合結構101。In this embodiment, the method of bonding the first circuit board 110 and the second circuit board 130 is, for example, to turn the second circuit board 130 as shown in FIG. 1C up and down first. Then, after forming the frame glue 652 on the fourth surface 130b of the second circuit board 130, an adhesive material 654 (eg, double-sided tape) is formed within the range surrounded by the frame glue 652. Next, make the third surface 110b of the first circuit board 110 and the fourth surface 130b of the second circuit board 130 contact the opposite sides of the sealant 652 and/or the adhesive material 654, respectively, to form a shape similar to that shown in FIG. 1D的粘结构101。 The adhesive structure 101.

圖7是依照本發明的第七實施例的一種陣列基板的部分剖面示意圖。本實施例的陣列基板700與第一實施例的陣列基板100類似,差別在於:第一線路板110的第三表面110b(即,第一基板111遠離元件層112且與黏著層150相接處的表面)上可以更具有多個微結構711a。位於第三表面110b上的微結構可以提升第一線路板110與黏著層150之間的黏著力。7 is a schematic partial cross-sectional view of an array substrate according to a seventh embodiment of the invention. The array substrate 700 of this embodiment is similar to the array substrate 100 of the first embodiment, the difference is that: the third surface 110b of the first circuit board 110 (ie, the first substrate 111 is far from the element layer 112 and is in contact with the adhesive layer 150 Can have more microstructures 711a on its surface). The microstructure on the third surface 110b can enhance the adhesion between the first circuit board 110 and the adhesive layer 150.

在其他未繪示的實施例中,第二線路板130的第四表面130b(即,第二基板131遠離元件層112且與黏著層150相接處的表面)可以更具有類似的微結構(如:圖7中的微結構711a),於本發明中並不加以限制。In other embodiments not shown, the fourth surface 130b of the second circuit board 130 (that is, the surface of the second substrate 131 away from the device layer 112 and in contact with the adhesive layer 150) may have a similar microstructure ( For example, the microstructure 711a in FIG. 7 is not limited in the present invention.

基於上述,本發明的陣列基板是藉由黏著層將第一線路板與第二線路板彼此黏合。因此,陣列基板的製造方法較為簡單。並且,可以在將第一線路板與第二線路板彼此黏合前確認第一線路板與第二線路板具有良好的功能。因此,可以提升陣列基板的製作良率。另外,用於將第一線路板與第二線路板彼此電性連接的連接電極是形成在第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣上,而第一線路板的第一邊緣、第二線路板的第二邊緣以及黏著層的黏著邊緣上可以藉由切割製程而基本上彼此切齊。因此,陣列基板的製造方法較為簡單,且可以提升陣列基板的製作良率。Based on the above, the array substrate of the present invention bonds the first circuit board and the second circuit board to each other through the adhesive layer. Therefore, the manufacturing method of the array substrate is relatively simple. Moreover, it can be confirmed that the first circuit board and the second circuit board have a good function before bonding the first circuit board and the second circuit board to each other. Therefore, the manufacturing yield of the array substrate can be improved. In addition, connection electrodes for electrically connecting the first circuit board and the second circuit board to each other are formed on the first edge of the first circuit board, the second edge of the second circuit board, and the adhesive edge of the adhesive layer, and The first edge of the first circuit board, the second edge of the second circuit board and the adhesive edge of the adhesive layer can be substantially aligned with each other by a cutting process. Therefore, the manufacturing method of the array substrate is relatively simple, and the manufacturing yield of the array substrate can be improved.

本發明的陣列基板100、200、300、700或其他類似的陣列基板可以依據設計上的需求而有不同的應用,本發明對於陣列基板100、200、300、700或其他類似的陣列基板的應用方式並不加以限制。The array substrate 100, 200, 300, 700 or other similar array substrates of the present invention can have different applications according to design requirements. The application of the present invention to the array substrate 100, 200, 300, 700 or other similar array substrates The way is not limited.

圖8是依照本發明的一種顯示裝置的部分剖面示意圖。顯示裝置800可以包括陣列基板300以及微型發光元件810,且微型發光元件810電性連接於對應的第一接墊113以及對應的第二接墊114。8 is a schematic partial cross-sectional view of a display device according to the present invention. The display device 800 may include an array substrate 300 and a micro light emitting element 810, and the micro light emitting element 810 is electrically connected to the corresponding first pad 113 and the corresponding second pad 114.

在本實施例中,顯示裝置800所包括的陣列基板300是以第三實施例的陣列基板300為例。在其他的實施例中,顯示裝置800也可以包括前述任一實施例的陣列基板(如:陣列基板100、200、300、700)或包括類似於前述任一實施例的陣列基板。In this embodiment, the array substrate 300 included in the display device 800 takes the array substrate 300 of the third embodiment as an example. In other embodiments, the display device 800 may also include the array substrate of any of the foregoing embodiments (eg, array substrates 100, 200, 300, 700) or include an array substrate similar to any of the foregoing embodiments.

在本實施例中,例如可以將微型發光元件810配置於陣列基板300上,且藉由覆晶接合(flip-chip bonding)的方式而使微型發光元件810藉由對應的導電端子820電性連接至對應的第一接墊113以及對應的第二接墊114。但本發明對於微型發光元件810與陣列基板300之間的電性連接方式並不加以限制。在一些未繪示的實施例中,微型發光元件810可以藉由導線以與陣列基板300電性連接。In this embodiment, for example, the micro light emitting element 810 may be disposed on the array substrate 300, and the micro light emitting element 810 is electrically connected through the corresponding conductive terminal 820 by flip-chip bonding To the corresponding first pad 113 and the corresponding second pad 114. However, the present invention does not limit the electrical connection between the micro light-emitting element 810 and the array substrate 300. In some non-illustrated embodiments, the micro light-emitting element 810 can be electrically connected to the array substrate 300 through wires.

在本實施例中,顯示裝置800可以更包括電路板830。電路板830可以藉由導電端子840電性連接於壓合接墊134。電路板830例如為軟性印刷電路板(Flexible Printed Circuit;FPC),但本發明不限於此。In this embodiment, the display device 800 may further include a circuit board 830. The circuit board 830 can be electrically connected to the compression pad 134 through the conductive terminal 840. The circuit board 830 is, for example, a flexible printed circuit (FPC), but the invention is not limited thereto.

前述實施例之微型發光元件810之尺寸例如小於100微米,較佳地,小於50微米,但大於0微米。微型發光元件810可例如是有機發光元件或無機發光元件,較佳地,可為無機發光元件,但不限於此。微型發光元件810之結構可為P-N二極體、P-I-N二極體、或其它合適的結構。微型發光元件810之類型可以是垂直式微型發光元件、水平式微型發光元件或者是覆晶式微型發光元件。微型發光元件810可為有機材料(例如:有機高分子發光材料、有機小分子發光材料、有機配合物發光材料、或其它合適的材料、或前述材料之組合)、無機材料(例如:鈣鈦礦材料、稀土離子發光材料、稀土螢光材料、半導體發光材料、或其它合適的材料、或前述材料之組合)、或其它合適的材料、或前述材料之組合。The size of the miniature light emitting element 810 of the foregoing embodiment is, for example, less than 100 microns, preferably, less than 50 microns, but greater than 0 microns. The micro light-emitting element 810 may be, for example, an organic light-emitting element or an inorganic light-emitting element, preferably, an inorganic light-emitting element, but is not limited thereto. The structure of the micro light-emitting element 810 may be a P-N diode, a P-I-N diode, or other suitable structures. The type of the micro light emitting element 810 may be a vertical micro light emitting element, a horizontal micro light emitting element, or a flip chip micro light emitting element. The micro light-emitting element 810 may be an organic material (for example: organic polymer light-emitting material, organic small molecule light-emitting material, organic complex light-emitting material, or other suitable material, or a combination of the foregoing materials), an inorganic material (for example: perovskite Materials, rare-earth ion luminescent materials, rare-earth fluorescent materials, semiconductor light-emitting materials, or other suitable materials, or a combination of the foregoing materials), or other suitable materials, or a combination of the foregoing materials.

前述實施例中,主動元件T可採用薄膜電晶體(TFT),例如底閘型電晶體、頂閘型電晶體、立體型電晶體、或其它合適的電晶體。底閘型的電晶體之閘極G位於半導體層(如:通道層CH)之下方,頂閘型電晶體之閘極G或位於半導體層(如:通道層CH)之上方,而立體型電晶體之半導體層通道延伸非位於一平面。半導體層(如:通道層CH)可為單層或多層結構,且其材料包含非晶矽、微晶矽、奈米晶矽、多晶矽、單晶矽、有機半導體材料、氧化物半導體材料、奈米碳管/桿、鈣鈦礦材料、或其它合適的材料或前述之組合。In the foregoing embodiments, the active device T may use thin film transistors (TFTs), such as bottom gate transistors, top gate transistors, three-dimensional transistors, or other suitable transistors. The gate G of the bottom gate transistor is located below the semiconductor layer (eg channel layer CH), the gate G of the top gate transistor is above the semiconductor layer (eg channel layer CH), and the three-dimensional transistor The semiconductor layer channel of the crystal extends not in a plane. The semiconductor layer (eg, channel layer CH) can be a single-layer or multi-layer structure, and its materials include amorphous silicon, microcrystalline silicon, nanocrystalline silicon, polycrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials, nano Rice carbon tubes/rods, perovskite materials, or other suitable materials or combinations of the foregoing.

此外,可將前述實施例之主動元件T與另一主動元件(未繪示)及電容(未繪示)電性連接,簡稱為二個主動元件與一個電容(可表示為2T1C)。於其他實施例中,每個微型發光元件810所對應的主動元件與電容之個數可依設計變更,而可例如被簡稱為三個主動元件和一個或兩個電容(可表示為3T1C/2C)、四個主動元件和一個或兩個電容(可表示為4T1C/2C)、五個主動元件和一個或兩個電容(可表示為5T1C/2C)、六個主動元件和一個或兩個電容(可表示為6T1C/2C)、或是其他適合的電路配置。In addition, the active element T of the foregoing embodiment can be electrically connected to another active element (not shown) and a capacitor (not shown), which are simply referred to as two active elements and a capacitor (which can be expressed as 2T1C). In other embodiments, the number of active elements and capacitors corresponding to each micro light-emitting element 810 can be changed according to design, and can be referred to as three active elements and one or two capacitors (which can be expressed as 3T1C/2C, for example) ), four active components and one or two capacitors (can be expressed as 4T1C/2C), five active components and one or two capacitors (can be expressed as 5T1C/2C), six active components and one or two capacitors (Can be expressed as 6T1C/2C), or other suitable circuit configuration.

基於上述,本發明的顯示裝置是由本發明的陣列基板所構成。因此,顯示裝置的製造方法也可以較為簡單,且具有較佳的製作良率。Based on the above, the display device of the present invention is constituted by the array substrate of the present invention. Therefore, the manufacturing method of the display device may also be relatively simple and have a better manufacturing yield.

綜上所述,本發明的陣列基板的製造方法較為簡單,且具有較佳的製作良率。因此,藉由本發明的陣列基板所構成的顯示裝置的製造方法也可以較為簡單,且具有較佳的製作良率。In summary, the manufacturing method of the array substrate of the present invention is relatively simple, and has a better manufacturing yield. Therefore, the manufacturing method of the display device composed of the array substrate of the present invention can also be relatively simple, and has a better manufacturing yield.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100、200、300、700‧‧‧陣列基板101‧‧‧黏合結構110‧‧‧第一線路板110a‧‧‧第一表面110b‧‧‧第三表面110c‧‧‧第一邊緣111‧‧‧第一基板711a‧‧‧微結構112‧‧‧元件層113‧‧‧第一接墊114‧‧‧第二接墊115‧‧‧導線T‧‧‧主動元件S‧‧‧源極D‧‧‧汲極G‧‧‧閘極CH‧‧‧通道層120‧‧‧第一保護層121‧‧‧第一導通孔120a‧‧‧開口120b‧‧‧第一開口120c‧‧‧第二開口130‧‧‧第二線路板130a‧‧‧第二表面130b‧‧‧第四表面130c‧‧‧第二邊緣131‧‧‧第二基板132‧‧‧線路層133‧‧‧絕緣層134‧‧‧壓合接墊140‧‧‧第二保護層141‧‧‧第二導通孔140a‧‧‧開口140b‧‧‧壓合開口150‧‧‧黏著層150c‧‧‧黏著邊緣150h‧‧‧厚度151、453‧‧‧黏著材料452、552、652‧‧‧框膠160‧‧‧連接電極160h‧‧‧厚度270‧‧‧電極保護層FS‧‧‧平整面R‧‧‧邊緣區S1、S2、S3、S4、S5‧‧‧步驟800‧‧‧顯示裝置810‧‧‧微型發光元件830‧‧‧電路板FPC90‧‧‧切割裝置100, 200, 300, 700 ‧‧‧ array substrate 101‧‧‧ bonded structure 110‧‧‧ first circuit board 110a‧‧‧ first surface 110b‧‧‧ third surface 110c‧‧‧first edge 111‧‧ ‧First substrate 711a‧‧‧Microstructure 112‧‧‧Element layer 113‧‧‧First pad 114‧‧‧Second pad 115‧‧‧ Lead T‧‧‧Active element S‧‧‧Source D ‧‧‧Drain G‧‧‧Gate CH‧‧‧Channel layer 120‧‧‧First protective layer 121‧‧‧First via 120a‧‧‧Opening 120b‧‧‧First opening 120c‧‧‧ Two openings 130‧‧‧ Second circuit board 130a‧‧‧Second surface 130b‧‧‧Fourth surface 130c‧‧‧Second edge 131‧‧‧Second substrate 132‧‧‧Wiring layer 133‧‧‧Insulation layer 134‧‧‧Pressing pad 140‧‧‧Second protective layer 141‧‧‧Second via 140a‧‧‧Opening 140b‧‧‧Pressing opening 150‧‧‧Adhesive layer 150c‧‧‧Adhesive edge 150h‧ ‧‧Thickness 151, 453‧‧‧ Adhesive materials 452, 552, 652 ‧‧‧‧ Frame glue 160‧‧‧ Connected electrode 160h Zone S1, S2, S3, S4, S5 ‧‧‧ step 800 ‧ ‧ ‧ display device 810 ‧ ‧ ‧ mini light-emitting element 830 ‧ ‧ ‧ circuit board FPC90 ‧ ‧ ‧ cutting device

圖1A是依照本發明的第一實施例的一種陣列基板的製造方法的流程圖。 圖1B至圖1H是依照本發明的第一實施例的一種陣列基板的製造方法的部分剖面示意圖。 圖1I是依照本發明的第一實施例的一種陣列基板的部分製造方法的部分上視示意圖。 圖1J是依照本發明的第一實施例的一種陣列基板的部分製造方法的立體示意圖。 圖2是依照本發明的第二實施例的一種陣列基板的部分剖面示意圖。 圖3是依照本發明的第三實施例的一種陣列基板的部分剖面示意圖。 圖4是依照本發明的第四實施例的一種陣列基板的部分製造方法的立體示意圖。 圖5是依照本發明的第五實施例的一種陣列基板的部分製造方法的立體示意圖。 圖6是依照本發明的第六實施例的一種陣列基板的部分製造方法的立體示意圖。 圖7是依照本發明的第七實施例的一種陣列基板的部分剖面示意圖。 圖8是依照本發明的一種顯示裝置的部分剖面示意圖。FIG. 1A is a flowchart of a method for manufacturing an array substrate according to the first embodiment of the present invention. 1B to 1H are schematic partial cross-sectional views of a method of manufacturing an array substrate according to a first embodiment of the invention. FIG. 11 is a partial schematic top view of a partial manufacturing method of an array substrate according to the first embodiment of the present invention. 1J is a schematic perspective view of a partial manufacturing method of an array substrate according to the first embodiment of the present invention. 2 is a schematic partial cross-sectional view of an array substrate according to a second embodiment of the invention. 3 is a schematic partial cross-sectional view of an array substrate according to a third embodiment of the invention. 4 is a schematic perspective view of a partial manufacturing method of an array substrate according to a fourth embodiment of the invention. 5 is a perspective schematic view of a partial manufacturing method of an array substrate according to a fifth embodiment of the invention. 6 is a schematic perspective view of a partial manufacturing method of an array substrate according to a sixth embodiment of the invention. 7 is a schematic partial cross-sectional view of an array substrate according to a seventh embodiment of the invention. 8 is a schematic partial cross-sectional view of a display device according to the present invention.

S1、S2、S3、S4、S5‧‧‧陣列基板的製造方法的步驟 S1, S2, S3, S4, S5 ‧‧‧‧Manufacturing method of array substrate

Claims (17)

一種陣列基板,包括: 一第一線路板,具有一第一表面,且該第一線路板包括至少一第一接墊以及至少一第二接墊; 一第二線路板,具有一第二表面,且該第二線路板包括至少一壓合接墊; 一黏著層,位於該第一線路板與該第二線路板之間,其中該第一線路板的一第一邊緣、該第二線路板的一第二邊緣以及該黏著層的一黏著邊緣基本上彼此切齊;以及 至少一連接電極,從該第一線路板的該第一表面沿該第一線路板的該第一邊緣、該第二線路板的該第二邊緣以及該黏著層的該黏著邊緣延伸至該第二線路板的該第二表面,且該至少一連接電極電性連接於該至少一第二接墊與該至少一壓合接墊。An array substrate includes: a first circuit board with a first surface, and the first circuit board includes at least a first pad and at least a second pad; a second circuit board with a second surface And the second circuit board includes at least one press pad; an adhesive layer is located between the first circuit board and the second circuit board, wherein a first edge of the first circuit board and the second circuit A second edge of the board and an adhesive edge of the adhesive layer are substantially aligned with each other; and at least one connecting electrode from the first surface of the first circuit board along the first edge of the first circuit board, the The second edge of the second circuit board and the adhesive edge of the adhesive layer extend to the second surface of the second circuit board, and the at least one connecting electrode is electrically connected to the at least one second pad and the at least one One press-fit pad. 如申請專利範圍第1項所述的陣列基板,其中該第一線路板的該第一邊緣、該第二線路板的該第二邊緣以及該黏著層的該黏著邊緣構成一平整面,且該至少一連接電極至少部分覆蓋於該平整面上。The array substrate according to item 1 of the patent application scope, wherein the first edge of the first circuit board, the second edge of the second circuit board, and the adhesive edge of the adhesive layer form a flat surface, and the At least one connecting electrode at least partially covers the flat surface. 如申請專利範圍第1項所述的陣列基板,其中該黏著層的厚度小於或等於10微米。The array substrate as described in item 1 of the patent application range, wherein the thickness of the adhesive layer is less than or equal to 10 microns. 如申請專利範圍第1項所述的陣列基板,更包括: 一電極保護層,覆蓋於該至少一連接電極上。The array substrate as described in item 1 of the patent application further includes: an electrode protection layer covering the at least one connection electrode. 如申請專利範圍第1項所述的陣列基板,更包括: 一第一保護層,覆蓋於該第一線路板上,該第一保護層具有至少一第一導通孔,且該至少一連接電極藉由該至少一第一導通孔電性連接於該至少一第二接墊。The array substrate as described in item 1 of the patent application scope further includes: a first protective layer covering the first circuit board, the first protective layer having at least one first via hole, and the at least one connecting electrode The at least one first via is electrically connected to the at least one second pad. 如申請專利範圍第5項所述的陣列基板,其中該第一保護層具有對應於該至少一第一接墊的至少一第一開口以及對應於該至少一第二接墊的至少一第二開口。The array substrate as claimed in item 5 of the patent application range, wherein the first protective layer has at least one first opening corresponding to the at least one first pad and at least one second corresponding to the at least one second pad Opening. 如申請專利範圍第1項所述的陣列基板,更包括: 一第二保護層,覆蓋於該第二線路板上,該第二保護層具有至少一第二導通孔,且該至少一連接電極藉由該至少一第二導通孔電性連接於該至少一壓合接墊。The array substrate as described in item 1 of the patent application scope further includes: a second protective layer covering the second circuit board, the second protective layer having at least one second via hole, and the at least one connecting electrode The at least one second via is electrically connected to the at least one compression pad. 如申請專利範圍第7項所述的陣列基板,其中該第二保護層具有對應於該至少一壓合接墊的至少一壓合開口。The array substrate according to item 7 of the patent application range, wherein the second protective layer has at least one pressing opening corresponding to the at least one pressing pad. 一種顯示裝置,包括: 如請求項1之陣列基板;以及 至少一微型發光元件,配置於該陣列基板上,該至少一微型發光元件電性連接於該至少一第一接墊以及該至少一第二接墊。A display device, including: the array substrate of claim 1; and at least one micro light-emitting element disposed on the array substrate, the at least one micro light-emitting element is electrically connected to the at least one first pad and the at least one first Two pads. 如申請專利範圍第9項所述的顯示裝置,更包括: 一電路板,電性連接於該至少一壓合接墊。The display device as described in item 9 of the patent application scope further includes: a circuit board electrically connected to the at least one compression pad. 一種陣列基板的製造方法,包括: 提供一第一線路板,該第一線路板包括至少一第一接墊以及至少一第二接墊; 提供一第二線路板,該第二線路板包括至少一壓合接墊; 進行一黏合製程,以形成黏合該第一線路板與該第二線路板的一黏著層; 進行一切割製程,以切割該第一線路板、該黏著層以及該第二線路板的至少其中之一;以及 於進行該切割製程之後,形成至少一連接電極,以電性連接該至少一第二接墊與該至少一壓合接墊,該至少一連接電極至少部分覆蓋該第一線路板的一第一邊緣、該第二線路板的一第二邊緣以及該黏著層的一黏著邊緣,且該第一線路板的該第一邊緣、該第二線路板的該第二邊緣以及該黏著層的該黏著邊緣基本上彼此切齊。A method for manufacturing an array substrate includes: providing a first circuit board, the first circuit board including at least a first pad and at least a second pad; providing a second circuit board, the second circuit board including at least A pressure bonding pad; performing a bonding process to form an adhesive layer for bonding the first circuit board and the second circuit board; performing a cutting process to cut the first circuit board, the adhesive layer and the second At least one of the circuit boards; and after performing the cutting process, forming at least one connection electrode to electrically connect the at least one second pad and the at least one compression pad, the at least one connection electrode is at least partially covered A first edge of the first circuit board, a second edge of the second circuit board and an adhesive edge of the adhesive layer, and the first edge of the first circuit board and the first edge of the second circuit board The two edges and the adhesive edge of the adhesive layer are substantially aligned with each other. 如申請專利範圍第11項所述的陣列基板的製造方法,其中該第一線路板的該第一邊緣、該第二線路板的該第二邊緣以及該黏著層的該黏著邊緣構成一平整面,且該至少一連接電極至少部分覆蓋於該平整面上。The method for manufacturing an array substrate as described in item 11 of the patent application range, wherein the first edge of the first circuit board, the second edge of the second circuit board and the adhesive edge of the adhesive layer form a flat surface And the at least one connecting electrode at least partially covers the flat surface. 如申請專利範圍第11項所述的陣列基板的製造方法,其中該黏著層的厚度小於或等於10微米。The method for manufacturing an array substrate as described in item 11 of the patent application range, wherein the thickness of the adhesive layer is less than or equal to 10 microns. 如申請專利範圍第11項所述的陣列基板的製造方法,更包括: 形成一電極保護層於該至少一連接電極上。The method for manufacturing an array substrate as described in item 11 of the patent application scope further includes: forming an electrode protection layer on the at least one connection electrode. 如申請專利範圍第11項所述的陣列基板的製造方法,更包括: 於進行該切割製程之前,於該第一線路板上形成一第一保護層。The method for manufacturing an array substrate as described in item 11 of the scope of the patent application further includes: before performing the dicing process, forming a first protective layer on the first circuit board. 如申請專利範圍第11項所述的陣列基板的製造方法,更包括: 於進行該切割製程之前,於該第二線路板上形成一第二保護層。The method for manufacturing an array substrate as described in item 11 of the scope of patent application further includes: forming a second protective layer on the second circuit board before performing the dicing process. 一種顯示裝置的製造方法,包括: 提供如請求項1之陣列基板;以及 配置至少一微型發光元件於該陣列基板上,且該至少一微型發光元件電性連接於該至少一第一接墊以及該至少一第二接墊。A manufacturing method of a display device, comprising: providing an array substrate as claimed in claim 1; and arranging at least one miniature light emitting element on the array substrate, and the at least one miniature light emitting element is electrically connected to the at least one first pad and The at least one second pad.
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