TW202007788A - Implant plasma coating and molecular cross-linking process and structure in which functional molecules are bonded with an cross-linking agent to remain on the surface of the dental implant - Google Patents
Implant plasma coating and molecular cross-linking process and structure in which functional molecules are bonded with an cross-linking agent to remain on the surface of the dental implant Download PDFInfo
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Description
本發明係與植牙有關,特別是指一種之植體電漿鍍膜與分子交聯流程及結構。 The invention relates to dental implants, in particular to a flow and structure of implant plasma coating and molecular cross-linking.
一般骨內植入物如人工牙根(植體),於手術後將需要數個月的恢復期,使骨骼重新生長並與植體結合,或是稱為骨整合。而骨整合的效率與植體的穩固度有直接關係,當植體搖動時,骨整合無法進行,因此醫師通常於手術時,會使植體尺寸略大於骨骼上的孔洞尺寸,透過骨骼壓迫植體而產生較佳的初期穩定度。 Generally, intraosseous implants such as artificial tooth roots (implants) will require a recovery period of several months after surgery to allow bones to re-grow and combine with the implant, or osseointegration. The efficiency of osseointegration is directly related to the stability of the implant. When the implant is shaken, osseointegration cannot be performed. Therefore, doctors usually make the size of the implant slightly larger than the size of the hole in the bone during surgery. To produce better initial stability.
植牙手術後的兩週內,受損骨骼會被人體分解吸收,此時植體會產生鬆動。 Within two weeks after the dental implant surgery, the damaged bone will be decomposed and absorbed by the body, and the implant will loosen at this time.
但是植體因受力而搖動時,會使骨細胞無法生長,進而導致骨整合失敗,也正因為如此,習用的植牙成功率通常較低。 However, when the implant is shaken due to force, it will prevent the growth of bone cells, which will lead to the failure of osseointegration. Because of this, the success rate of conventional dental implants is usually low.
此外,植體於骨整合期間如了可能發生上述問題外,由於植體並不像自然骨骼有血管網絡,植體對於病菌的抑制力較差,因此容易引發「植體周圍炎」等併發症,若患者於口腔清潔上並不確實,進而引發植體周圍炎時,則植牙失敗率高達20~30%。 In addition, the above problems may occur during the period of osseointegration. Since the implant does not have a vascular network like natural bone, the implant's ability to inhibit bacteria is poor, so it is easy to cause complications such as "peri-implant inflammation". If the patient is not sure about oral cleansing and then causes peri-implant inflammation, the dental implant failure rate is as high as 20-30%.
從上述可知,患者於植牙手術並植入植體時,植體將立即暴 露於口腔的惡劣環境中,且須要承受患者咀嚼時的機械力及病菌的滋生,將大幅降低植牙成功率。 It can be seen from the above that when a patient undergoes dental implant surgery and implants are implanted, the implants will be immediately exposed to the harsh environment of the oral cavity, and they must bear the mechanical force of the patients chewing and the breeding of bacteria, which will greatly reduce the success rate of dental implants.
由此可見,上述習用植牙方法仍有諸多缺失,實非一良善之設計者,而亟待加以改良。 It can be seen that there are still many defects in the above-mentioned conventional dental implant method. It is not a good designer, and it needs to be improved urgently.
本案發明人鑑於上述習用植牙方法所衍生的各項缺點,乃亟思加以改良創新,並經多年苦心孤詣潛心研究後,終於成功研發完成本件植體電漿鍍膜與分子交聯流程及結構。 In view of the shortcomings derived from the above-mentioned conventional dental implant method, the inventor of the present case is eager to improve and innovate. After years of painstaking research, he finally successfully completed the process and structure of this implant plasma coating and molecular cross-linking.
本發明之目的係提供一種植體電漿鍍膜與分子交聯流程及結構,係於將含有矽氧類分子之單體分解為電漿狀態後鍍膜於植體表面,再於植體表面沾附交聯劑,而後將功能性分子與交聯劑鍵結,使得功能性分子保留於植體表面,藉此提高植牙手術成功率。 The object of the present invention is to provide a process and structure for implant plasma coating and molecular cross-linking, which is to decompose monomer containing silicon-oxygen molecules into plasma state and then coat the coating on the surface of the implant, and then adhere to the surface of the implant The cross-linking agent then bonds the functional molecule with the cross-linking agent, so that the functional molecule remains on the surface of the implant, thereby improving the success rate of the dental implant surgery.
為了達到上述目的,本發明植體電漿鍍膜與分子交聯流程,包含以下步驟:提供一植體成品;將含有矽氧類分子之單體分解為離子狀態(電漿),並其於植體表面形成鍍膜;於植體表面沾附或塗佈或浸泡一可與矽氧烷鍍膜產生共價鍵結合之交聯劑;於交聯劑外塗佈功能性分子,使其產生化學鍵結而保留於植體表面,藉此完成植體電漿鍍膜與分子交聯流程。 In order to achieve the above objective, the process of implant plasma coating and molecular cross-linking of the present invention includes the following steps: providing a finished implant; decomposing the monomer containing silicon-based molecules into an ionic state (plasma), and applying it to the plant A coating is formed on the surface of the body; a cross-linking agent that can be covalently bonded to the coating of the silicone is adhered or coated or soaked on the surface of the implant; a functional molecule is coated on the cross-linking agent to cause chemical bonding Retain on the surface of the implant to complete the process of implant plasma coating and molecular cross-linking.
為了達到上述目的,本發明植體電漿鍍膜與分子交聯結構, 包含有:一植體,係用來嵌入齒槽骨內並支撐一假牙,其包含有一人工牙根及設置於該人工牙根上之基座;含有矽氧類分子之單體,係鍍膜於植體表面,該含有矽氧類分子之單體分解為離子狀態後鍍膜於植體表面;交聯劑,係沾附或塗佈或浸泡於該鍍膜後之植體表面,該交聯劑係為化學交聯劑或天然交聯劑或其組合,例如:京尼平或原花青素;功能性分子,係塗佈於該交聯劑外並產生化學鍵結,使該功能性分子保留於該植體表面,該功能性分子係為骨生長促進分子或抗菌分子。 In order to achieve the above object, the plasma coating of the implant and the molecular cross-linking structure of the present invention include: an implant for embedding in the alveolar bone and supporting a denture, which includes an artificial tooth root and is disposed on the artificial tooth root The base; monomers containing silicon-oxygen molecules are coated on the surface of the implant, the monomers containing silicon-oxygen molecules are decomposed into ionic state and then coated on the surface of the implant; crosslinking agent is attached or coated Or immersed in the surface of the implant after the coating, the cross-linking agent is a chemical cross-linking agent or a natural cross-linking agent or a combination thereof, for example: genipin or proanthocyanidins; functional molecules are coated on the cross-linking agent It also generates chemical bonds to keep the functional molecules on the surface of the implant. The functional molecules are bone growth promoting molecules or antibacterial molecules.
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,然而所附圖式僅提供參考與說明用,並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the accompanying drawings are provided for reference and explanation only, and are not intended to limit the present invention.
1‧‧‧植體 1‧‧‧Implant
11‧‧‧人工牙根 11‧‧‧ Artificial tooth root
12‧‧‧基座 12‧‧‧Dock
2‧‧‧含有矽氧類分子之單體 2‧‧‧Monomer containing silica molecules
3‧‧‧交聯劑 3‧‧‧Crosslinking agent
4‧‧‧功能性分子 4‧‧‧ Functional Molecule
第一圖 係本發明植牙力學阻斷流程之實施流程示意圖。 The first figure is a schematic diagram of the implementation process of the implantation mechanics blocking process of the present invention.
第二圖 係本發明植牙力學阻斷結構之結構示意圖。 The second figure is a schematic structural view of the mechanical blocking structure of the dental implant of the present invention.
第三圖 係本發明植牙力學阻斷結構之局部放大結構示意圖。 The third figure is a partially enlarged schematic view of the mechanical blocking structure of the dental implant of the present invention.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are described below in conjunction with the accompanying drawings, which are described in detail below.
請參閱第一圖所示,本發明提供一種植體電漿鍍膜與分子交 聯流程,其包含以下步驟:步驟一10:提供一植體成品,且該植體包含有一人工牙根及設置於該人工牙根上之基座;步驟二20:將含有矽氧類分子之單體分解為離子狀態(電漿),並其於植體表面形成奈米鍍膜;步驟三30:於植體表面沾附或塗佈或浸泡交聯劑,該交聯劑為化學交聯劑或天然交聯劑或其組合,且類似分子黏膠,例如:京尼平、原花青素等,當交聯劑接觸到矽氧烷鍍膜時,將會產生共價鍵結合,使其具備與其他功能性分子結合之能力;步驟四40:於交聯劑外塗佈功能性分子,使其產生化學鍵結而保留於植體表面;該功能性分子係為骨生長促進分子,係用以縮短骨整合時間而縮短療程;或可為抗菌分子,用以減少植體周圍炎的發生率,藉此提升手術成功率;透過上述步驟完成植體電漿鍍膜與分子交聯流程。 As shown in the first figure, the present invention provides an implant plasma coating and molecular cross-linking process, which includes the following steps: Step 1: 10: Provide a finished implant, and the implant includes an artificial tooth root and is provided in the The base on the artificial tooth root; Step 2: 20: Decompose the monomer containing siloxane molecules into an ionic state (plasma) and form a nano-coating on the surface of the implant; Step 3: 30: Attach to the surface of the implant Or coated or soaked cross-linking agent, the cross-linking agent is a chemical cross-linking agent or a natural cross-linking agent or a combination thereof, and is similar to molecular viscose, such as: genipin, proanthocyanidins, etc., when the cross-linking agent comes into contact with silica When coating the alkane, it will produce covalent bonding to make it have the ability to combine with other functional molecules;
請參閱第二圖及第三圖所示,本發明提供一種植體電漿鍍膜與分子交聯結構,其包含有:一植體1,係用來嵌入齒槽骨內並支撐一假牙,其包含有一人工牙根11及設置於該人工牙根11上之基座12,其中該人工牙根11係用以嵌入齒槽骨內,而基座12則用以支撐假牙;一含有矽氧類分子之單體2,係鍍膜於植體1表面,該含有矽氧類分子之單體2係分解為離子狀態後鍍膜於植體1表面;交聯劑3,係沾附或塗佈或浸泡於該鍍膜後之植體1表面, 該交聯劑3係為化學交聯劑或天然交聯劑或其組合,如:京尼平或原花青素;功能性分子4,係塗佈於該交聯劑3外並產生化學鍵結,使該功能性分子4保留於該植體1表面,該功能性分子4係為骨生長促進分子或抗菌分子。 Please refer to the second and third figures, the present invention provides an implant plasma coating and molecular cross-linking structure, which includes: an
透過上述結構可知,本發明係於植體1上透過鍍膜與分子交聯,依據不同的功能性分子4提供植體1相對應的功能,例如骨生長促進分子係用以縮短骨整合時間而縮短療程,而抗菌分子則用以減少植體周圍炎的發生率,藉此提升植牙手術成功率。 From the above structure, it can be seen that the present invention is to cross-link molecules on the
上列詳細說明係針對本發明之一可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。本發明之權利保護範圍應如後述之申請專利範圍所述。 The above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or change without departing from the technical spirit of the present invention should be included in The patent scope of this case. The scope of protection of the rights of the present invention shall be as described in the scope of patent application mentioned later.
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