TW202007787A - Method of airtighting and waterproofing using CVD and silane compound - Google Patents
Method of airtighting and waterproofing using CVD and silane compound Download PDFInfo
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- TW202007787A TW202007787A TW107125766A TW107125766A TW202007787A TW 202007787 A TW202007787 A TW 202007787A TW 107125766 A TW107125766 A TW 107125766A TW 107125766 A TW107125766 A TW 107125766A TW 202007787 A TW202007787 A TW 202007787A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Abstract
Description
本發明之領域係有關於一種面板組裝的領域,特別是關於一種面板防水組裝技術的領域。The field of the invention relates to the field of panel assembly, in particular to the field of panel waterproof assembly technology.
在許多元件出廠前都必須在表面玻璃(Cover Glass,CG)與框體(Frame)之間進行氣密性檢測(Air Leak Test,ALT),其目的是為了要檢測該元件的防水性。氣密性檢測方式是將玻璃與框體放置於一腔體內,並使玻璃與框體的貼合面形成密閉空間,再對此空間進行灌氣,偵測是否有漏氣氣壓(如圖一)。圖1接洩漏儀1會將測試氣源2所充的氣排出去;充氣的正壓例如可以是1.25大氣壓力。玻璃表面與乘載框體間的膠體若有缺陷,便會自接洩漏儀1偵測到漏氣氣壓。Before leaving the factory, many components must be tested for air tightness (Air Leak Test, ALT) between the cover glass (CG) and the frame (Frame). The purpose is to test the waterproofness of the component. The airtightness detection method is to place the glass and the frame in a cavity, and form a sealed space between the glass and the frame, and then inflate the space to detect whether there is air pressure (as shown in Figure 1) ). Connecting the
在工業生產數據上偶爾有些零星批次性會因製程而造成大約0.2%的氣密性檢測失敗(ALT Fail)。故,為了提高生產良率並達成更精密的防水效果,產品可以先於出廠前加工防水氣密層,以更確保氣密品質。Occasionally, some sporadic batches in the industrial production data will cause about 0.2% of the air tightness test (ALT Fail) due to the process. Therefore, in order to improve the production yield and achieve a more precise waterproof effect, the product can be processed with a waterproof airtight layer before leaving the factory to ensure the airtight quality.
而矽烷化合物(Silane Compound)具有水解敏感中心,可做為有機材料及無機材料之間結合的橋樑。研究上經常利用矽烷化合物的官能基來改變基材表面的親疏水性,其反應分為四個步驟:水解(hydrolysis)、聚縮(condensation)、氫鍵鍵結(hydrogen bonding)及鍵結形成(bond formation),如圖二所示。這四個步驟中的起始步驟「水解」為速率決定步驟,經過此步驟後接下來兩步驟為自發反應。在最後的鍵結形成時須將水除去。使用的方法通常有兩種,一是加熱,例如置於120℃烘箱約30至90分鐘,二是抽真空2至6小時,以形成矽氧(Si-O)共價鍵。此種表面改質方法通常又被稱做表面單層自組裝(Self Assembly Monolayer,SAM),可以在一般室溫下進行,是個方便的製程。Silane Compound has a hydrolysis sensitive center and can be used as a bridge between organic and inorganic materials. In research, the functional groups of silane compounds are often used to change the hydrophilicity and hydrophobicity of the substrate surface. The reaction is divided into four steps: hydrolysis, condensation, hydrogen bonding, and bond formation ( bond formation), as shown in Figure 2. The initial step of these four steps, "hydrolysis", is the rate-determining step. After this step, the next two steps are spontaneous reactions. Water must be removed when the last bond is formed. There are usually two methods used, one is heating, for example, placed in an oven at 120 ℃ for about 30 to 90 minutes, and the second is to evacuate for 2 to 6 hours to form a covalent bond of silicon-oxygen (Si-O). This type of surface modification method is also commonly referred to as surface assembly monolayer (SAM), which can be performed at ordinary room temperature and is a convenient process.
故,為達到防水設計,本發明以潔淨的乾製程為主。且應用的基材對矽氧化合物有較佳的反應速率,因此本發明利用長碳鏈矽烷化合物來做為氣密防水層。Therefore, in order to achieve a waterproof design, the present invention is based on a clean dry process. Moreover, the applied substrate has a better reaction rate to the silicon oxide compound, so the present invention uses a long carbon chain silane compound as the airtight waterproof layer.
本發明以化學氣相沉積(Chemical Vapor Deposition,CVD)方法將長碳鏈矽烷化合物用於面板的組裝,特別是觸碰面板。在面板前段的壓合製程完成後,進行長碳矽烷化合物化學氣相沉積,再進行氣密測試,流程如下圖三。藉此,以達到面板的防水氣密效果。The present invention uses chemical vapor deposition (CVD) method to use long carbon chain silane compound for panel assembly, especially touch panel. After the lamination process in the front section of the panel is completed, long carbon silane compound chemical vapor deposition is performed, and then the air tightness test is performed. The flow is shown in Figure 3 below. In this way, the waterproof and airtight effect of the panel is achieved.
本發明提供一種以化學氣相沉積長碳鏈矽烷化合物作為氣密防水之方法,包含步驟:壓合一框體與一面板以形成一組件;以一光罩覆蓋該面板之部分表面,並露出一欲沉積表面;以臭氧電漿將該欲沉積表面進行改質;置該組件於一真空反應腔,將該真空反應腔升溫至30-70ºC ,並導入一前驅溶液之氣體;及靜置沉積90-180分鐘形成一長碳鏈矽烷化合物沉積層於欲沉積處, 其中該前驅溶液包含長碳鏈矽烷化合物0.5-1.5v/v%及異丙醇98.5-99.5v/v%。The invention provides a method for chemically vapor-depositing a long carbon chain silane compound as an airtight and waterproof method, comprising the steps of: pressing a frame and a panel to form an assembly; covering a part of the surface of the panel with a photomask and exposing it A surface to be deposited; modifying the surface to be deposited with ozone plasma; placing the assembly in a vacuum reaction chamber, heating the vacuum reaction chamber to 30-70ºC, and introducing a gas of a precursor solution; and static deposition 90-180 minutes to form a long carbon chain silane compound deposition layer to be deposited, wherein the precursor solution contains long carbon chain silane compound 0.5-1.5v/v% and isopropyl alcohol 98.5-99.5v/v%.
較佳地,該框體為膠框體。Preferably, the frame is a plastic frame.
較佳地,該真空度<-2E。Preferably, the degree of vacuum <-2E.
本發明之方法係利用化學氣相沉積法將長碳鏈矽烷化合物沉積於該框體與該面板連接邊緣,藉以達到氣密防水之功效。The method of the present invention uses a chemical vapor deposition method to deposit a long carbon chain silane compound on the edge of the connection between the frame and the panel, so as to achieve the effect of airtightness and waterproofness.
本發明另請求一氣密防水結構,包含一框體、一玻璃表面、及一長碳鏈矽烷化合物沉積層,其中該框體與該玻璃表面壓合形成一組件,該長碳鏈矽烷化合物沉積層係利用本發明所述之方法沉積於該框體與玻璃表面之連接邊緣。該長碳鏈矽烷化合物沉積層係由一前驅溶液之氣態分子沉積而成,該前驅溶液包含長碳鏈矽烷化合物0.5-1.5v/v%及異丙醇98.5-99.5 v/v%。The present invention also requests an airtight waterproof structure including a frame, a glass surface, and a long carbon chain silane compound deposition layer, wherein the frame body is pressed against the glass surface to form an assembly, and the long carbon chain silane compound deposition layer It is deposited on the connecting edge of the frame and the glass surface by the method described in the present invention. The long carbon chain silane compound deposition layer is formed by depositing gaseous molecules of a precursor solution. The precursor solution contains a long carbon chain silane compound 0.5-1.5v/v% and isopropyl alcohol 98.5-99.5 v/v%.
較佳地該長碳鏈矽烷層為奈米級單層吸附層。該長碳鏈矽烷化合物沉積層之厚度較佳為10nm~30nm。該厚度可依照需求進行合理的調整。Preferably, the long carbon chain silane layer is a nano-level single-layer adsorption layer. The thickness of the long carbon chain silane compound deposited layer is preferably 10 nm to 30 nm. The thickness can be adjusted reasonably according to requirements.
本發明另提供一種以化學氣相沉積長碳鏈矽烷化合物作為氣密防水之方法,包含步驟: 壓合一框體與一面板以形成一組件; 以一光罩覆蓋該面板之部分表面,並露出一欲沉積處; 以臭氧電漿將該欲沉積表面進行改質; 置該組件於一120ºC烤箱,並導入一前驅溶液之氣體;及 靜置沉積2小時形成一長碳鏈矽烷化合物沉積層於欲沉積處, 其中該前驅溶液包含長碳鏈矽烷化合物0.5-1.5v/v%及異丙醇98.5-99.5v/v%。The present invention also provides a method for chemically vapor-depositing a long carbon chain silane compound as an airtight and waterproof method, comprising the steps of: laminating a frame and a panel to form an assembly; covering a part of the surface of the panel with a photomask, and Exposing a place to be deposited; modifying the surface to be deposited with ozone plasma; placing the assembly in a 120ºC oven and introducing a gas of a precursor solution; and standing to deposit for 2 hours to form a long carbon chain silane compound deposition layer Where it is to be deposited, the precursor solution contains a long carbon chain silane compound 0.5-1.5v/v% and isopropanol 98.5-99.5v/v%.
本發明所請之方法係於玻璃表面與乘載框體間沉積一防水的長碳鏈矽烷化合物層,藉此降低氣密性檢測失敗率,並提高產品良率,達到氣密防水的效果。The method requested by the present invention is to deposit a waterproof long carbon chain silane compound layer between the glass surface and the loading frame, thereby reducing the failure rate of airtightness detection, and improving the product yield to achieve the effect of airtightness and waterproofness.
較佳地該長碳鏈矽烷層為奈米級單層吸附層,且該框體為膠框。Preferably, the long carbon chain silane layer is a nano-level single-layer adsorption layer, and the frame body is a rubber frame.
而利用本發明所請的方法製備而成的防水面板可提高玻璃表面與乘載框體間的氣密品質。The waterproof panel prepared by the method requested by the present invention can improve the airtight quality between the glass surface and the loading frame.
本發明所請之防水技術可應用於3C領域,例如手機、相機,進而可延伸至可穿戴式3C產品;亦可應用於交通產業,如汽車工業、飛機工業、船舶工業等等、軍事及基礎工業。此外醫療產業、半導體製程、印刷電路板等各種會應用到防水技術的產業亦可使用本發明之技術。The waterproof technology requested by the present invention can be applied to the 3C field, such as mobile phones and cameras, and can be extended to wearable 3C products; it can also be applied to the transportation industry, such as the automotive industry, aircraft industry, shipbuilding industry, etc., military and basic industry. In addition, the medical industry, semiconductor manufacturing, printed circuit boards and other industries that will be applied to waterproof technology can also use the technology of the present invention.
為使熟悉該項技藝人士瞭解本發明之目的,兹將本發明之較佳實施例詳細說明如下。In order to make those skilled in the art understand the purpose of the present invention, the preferred embodiments of the present invention are described in detail as follows.
請參照圖4,在一實施例中,以真空化學氣相沉積法沉積長碳鏈矽烷化合物於一面板3及一框體4連接處的邊緣。該面板為一玻璃面板。面板3與框體4先行壓合,並以膠體5接合面板3與框體4,以形成一組件。接著將部分面板3以一光罩6覆蓋,並露出欲沉積的表面。再以臭氧電漿12對該欲沉積表面做改質處理。Referring to FIG. 4, in one embodiment, the long carbon chain silane compound is deposited on the edge of the junction between a
將組件置入一個真空反應腔體11中,確保反應腔中已無其他氣體干擾後續反應,並加熱該真空反應腔至40ºC,導入一含有長碳鏈化合物之前驅溶液的氣體7。讓該組件靜置兩小時,使長碳鏈矽烷化合物分子沉積於欲沉積的表面,形成長碳鏈矽烷化合物沉積層。該導入的方法可以如圖4所示,利用孔洞網架讓該前驅溶液之氣體7蒸發進反應腔。Place the assembly in a
在另一實施例中,亦可使用一般真空系統,直接將該前驅溶液的氣體打進真空系統。In another embodiment, a general vacuum system can also be used to directly inject the gas of the precursor solution into the vacuum system.
在另一實施例中,該面板3之下方亦被一光罩6覆蓋,如圖5所示,藉此,該面板3之下方未被該光罩6覆蓋之處亦可進行改質,使該長碳鏈矽烷化合物沉積層亦可沉積於面板內側。In another embodiment, the underside of the
在其他實施例中,該沉積表面改質方式亦可為UV直接照射表面或是氬氣(Ar)電漿改質處理,或其他該領域所使用之表面改質手段。In other embodiments, the deposition surface modification method may also be UV direct irradiation on the surface or argon (Ar) plasma modification treatment, or other surface modification methods used in the field.
該長碳鏈化合物之前驅溶液包含長碳鏈矽烷化合物1v/v%及異丙醇99v/v%。The precursor solution of the long carbon chain compound contains a long carbon chain silane compound 1v/v% and isopropyl alcohol 99v/v%.
於一較佳實施例中,該長碳鏈矽烷化合物沉積層為奈米級單層沉積層。In a preferred embodiment, the long carbon chain silane compound deposition layer is a nano-level single-layer deposition layer.
於一較佳實施例中,該長碳鏈矽烷化合物為四乙基正矽酸鹽(TEOS)。In a preferred embodiment, the long carbon chain silane compound is tetraethyl orthosilicate (TEOS).
在另一實施例中,該長碳鏈矽烷化合物為4-苯丁基三氯硅烷(4-PHENYLBUTYLTRICHLOROSILANE,4PBTS)、或十六烷基三甲氧基硅烷(HEXADECYLTRIMETHOXYSILANE,HDTMS)。In another embodiment, the long carbon chain silane compound is 4-phenylbutyltrichlorosilane (4-PHENYLBUTYLTRICHLOROSILANE, 4PBTS), or hexadecyltrimethoxysilane (HEXADECYLTRIMETHOXYSILANE, HDTMS).
如圖6所示,該欲沉積處為該框體與該面板連接處的邊緣,藉此該沉積層10便可覆蓋住框體與面板連接處之縫隙,藉以防止水氣或其他汙染物經由該縫隙進到面板內部。因此可達到氣密防水之效果。As shown in FIG. 6, the place to be deposited is the edge of the connection between the frame and the panel, whereby the
於一實施例中,該框體4為膠框,或其他可承載面板之材質的框體。In an embodiment, the
在另一實施例中,該沉積層10是位於面板3及框體4之間的外側及/或內側來覆蓋面板與框體連接的縫隙,如圖6所示,以防止水氣或其他汙染物進入面板內側,影響內部結構。In another embodiment, the deposited
該異丙醇亦可以乙醇、甲醇、丙酮等所屬領域之常用溶劑替換使用,並不在此限。The isopropanol can also be replaced by common solvents in the art such as ethanol, methanol, acetone, etc., which is not limited thereto.
在另一實施例中,以加熱化學氣相沉積法沉積長碳鏈矽烷化合物於一面板及一框體連接處的邊緣。如圖4,面板3與框體4先行壓合,並以膠體5接合面板3與框體4,以形成一組件。接著將部分面板3以一光罩6覆蓋,並露出欲沉積的表面。再以臭氧電漿12對該欲沉積表面做改質處理。In another embodiment, the long carbon chain silane compound is deposited on the edge of the junction between a panel and a frame by a heated chemical vapor deposition method. As shown in FIG. 4, the
將組件置入一反應腔體中,導入一含有長碳鏈化合物之前驅溶液的氣體;再將該組建置於120℃烤箱中60-90分鐘,使長碳鏈矽烷化合物分子沉積於欲沉積的表面,形成長碳鏈矽烷化合物沉積層。Place the assembly in a reaction chamber and introduce a gas containing the precursor solution of the long carbon chain compound; then place the assembly in an oven at 120°C for 60-90 minutes to deposit the long carbon chain silane compound molecules on the surface to be deposited On the surface, a long carbon chain silane compound deposition layer is formed.
該長碳鏈化合物之前驅溶液包含長碳鏈矽烷化合物1v/v%及異丙醇99v/v%。The precursor solution of the long carbon chain compound contains a long carbon chain silane compound 1v/v% and isopropyl alcohol 99v/v%.
較佳地,該長碳鏈矽烷化合物沉積層為奈米級單層。Preferably, the long carbon chain silane compound deposited layer is a nano-level single layer.
在一實施例中,該長碳鏈矽烷化合物為四乙基正矽酸鹽(TEOS),或其他可應用於本領域之技術的有機矽烷化合物,例如4-苯丁基三氯硅烷(4-PHENYLBUTYLTRICHLOROSILANE,4PBTS)、或十六烷基三甲氧基硅烷(HEXADECYLTRIMETHOXYSILANE,HDTMS)。In one embodiment, the long carbon chain silane compound is tetraethyl orthosilicate (TEOS), or other organic silane compounds that can be applied in the art, such as 4-phenylbutyltrichlorosilane (4- PHENYLBUTYLTRICHLOROSILANE, 4PBTS), or cetyl trimethoxysilane (HEXADECYLTRIMETHOXYSILANE, HDTMS).
如圖6所示,該欲沉積處為該面板與該框體連接處的邊緣。As shown in FIG. 6, the place to be deposited is the edge where the panel is connected to the frame.
在一實施例中,該框體為膠框,或其他可承載面板之材質的框體。In one embodiment, the frame is a plastic frame, or other frame that can carry the material of the panel.
在另一實施例中,該沉積層是位於面板及框體之間的外側及/或內側來覆蓋面板與框體連接的縫隙,以防止水氣或其他汙染物進入面板內側。In another embodiment, the deposited layer is located outside and/or inside between the panel and the frame to cover the gap between the panel and the frame to prevent moisture or other contaminants from entering the inside of the panel.
本發明所述之面板可為玻璃面板、觸碰面板、玻璃觸控面板。在一較佳 實施例中,該面板為玻璃觸控面板。The panel described in the present invention may be a glass panel, a touch panel, or a glass touch panel. In a preferred embodiment, the panel is a glass touch panel.
在另一實施例中,該欲沉積處是位於面板及框體之間的外側及/或內側來封裝面板與框體,以防止水氣或其他汙染物進入面板內側。In another embodiment, the place to be deposited is located outside and/or inside between the panel and the frame to encapsulate the panel and the frame to prevent moisture or other contaminants from entering the inside of the panel.
本發明亦可以電漿加強化學氣相沉積法達成本發明之功效。The invention can also use plasma to enhance the effect of the chemical vapor deposition method to achieve the invention.
經過上述的詳細說明,已充分顯示本發明具有實施的進步性,且為前所未見,完全符合發明專利要件,爰依法提出申請。惟以上所述僅為本發明的一實施例而已,當不能用以限定本發明實施的範圍,亦即依本發明專利範圍所作的均等變化與修飾,皆應屬於本發明專利涵蓋的範圍內。After the above detailed description, it has been fully shown that the present invention has the progress of implementation, and it is unprecedented, fully meets the requirements of the invention patent, and the application is submitted according to law. However, the above is only an embodiment of the present invention, and should not be used to limit the scope of implementation of the present invention, that is, equal changes and modifications made in accordance with the patent scope of the present invention should all fall within the scope of the patent of the present invention.
1‧‧‧接洩漏儀2‧‧‧測試氣源3‧‧‧面板4‧‧‧框體5‧‧‧膠體6‧‧‧光罩7‧‧‧長碳鏈矽烷化合物氣體分子8‧‧‧孔洞網架9‧‧‧長碳鏈矽烷化合物溶液10‧‧‧長碳鏈矽烷化合物沉積層11‧‧‧真空反應腔體12‧‧‧臭氧1‧‧‧
圖1為氣密性檢測示意圖; 圖2為矽烷化合物改質基材表面的親疏水性之機制; 圖3為面板壓合、沉積、氣密測試之流程圖;及 圖4為長碳鏈矽烷化合物沉積流程示意圖。 圖5為另一面板光罩結合示意圖。 圖6為長碳鏈矽烷化合物沉積層位置示意圖。Figure 1 is a schematic diagram of air tightness detection; Figure 2 is a mechanism of hydrophilicity and hydrophobicity of silane compound modified substrate surface; Figure 3 is a flow chart of panel pressing, deposition, and air tightness test; and Figure 4 is a long carbon chain silane compound Schematic diagram of the deposition process. 5 is a schematic diagram of another panel mask combination. FIG. 6 is a schematic diagram of the position of the long carbon chain silane compound deposition layer.
3‧‧‧面板 3‧‧‧Panel
4‧‧‧框體 4‧‧‧Frame
5‧‧‧膠體 5‧‧‧Colloid
6‧‧‧光罩 6‧‧‧mask
7‧‧‧長碳鏈矽烷化合物氣體分子 7‧‧‧Long carbon chain silane compound gas molecules
8‧‧‧孔洞網架 8‧‧‧hole grid
9‧‧‧長碳鏈矽烷化合物溶液 9‧‧‧Long carbon chain silane compound solution
11‧‧‧真空反應腔體 11‧‧‧Vacuum reaction chamber
12‧‧‧臭氧 12‧‧‧Ozone
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CN201810813216.8 | 2018-07-23 |
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TW200402772A (en) * | 2002-05-21 | 2004-02-16 | Asml Us Inc | Method of depositing an oxide film by chemical vapor deposition |
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