JPH11274034A - Vapor phase processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a vapor phase processing apparatus which enables uniform processing of the surface of the wafer to be processed by improving uniformity of concentration of process gas and distribution of temperature on the surface of the wafer. SOLUTION: In this vapor phase silylating apparatus, a wafer 3 is retained in the process chamber 1, and a rotatable wafer stage 4 is installed around a central axis. By rotating the wafer stage 4, sililation is performed while the wafer 3 is rotated. In another example, the wafer 3 is retained on the wafer stage 4, and a rotatable substage is installed around the central axis. By rotating both the wafer stage 4 and the substage, sililation is performed, while the wafer 3 is rotated and revolved. In yet another example, the wafer stage 4 is movable in parallel. By moving the wafer stage 4 in parallel while rotating it, sililation is performed while the wafer 3 is rotated and moved in parallel.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor-phase processing apparatus, and is suitably applied to, for example, a vapor-phase silylation apparatus that performs a silylation process on a substrate to be processed in a gas phase.

[0002]

2. Description of the Related Art As semiconductor devices become more highly integrated, it is important to establish a technique for forming a fine circuit pattern in the manufacturing process. Under these circumstances, in the resist lithography step, the surface of the resist after exposure is, for example, hexamethyldisilazane (Hexamethyldisilazane).
zane, HMDS) to form a silylation layer selectively on the exposed or unexposed surface of the resist film. Then, the resist film is treated with oxygen (O ₂ ) plasma. For example, a dry development method is used. Specifically, when a negative resist is used,
Reacting the exposed portion of the exposed resist film with a silylating agent,
The resist pattern is formed by leaving the part after dry development, and when a positive resist is used, the unexposed part of the exposed resist film is reacted with a silylating agent, and the part is left after dry development. A resist pattern is formed.

In this silylation treatment, a silylated layer is formed only on the surface of the resist film.
In the lithography process, only the surface of the resist film needs to be exposed, and a fine pattern can be formed.

Usually, this silylation treatment is performed by exposing a wafer on which an exposed resist film has been formed to vapor of a silylating agent.

FIG. 8 is a schematic diagram showing an example of the configuration of a conventional gas-phase silylation apparatus used for this gas-phase silylation process.

As shown in FIG. 8, this conventional gas-phase silylation apparatus has a process chamber 101 which can be opened and closed. When the process chamber 101 is closed, its upper and lower parts are in close contact with each other via an O-ring 102 made of, for example, heat-resistant silicon rubber, so that an airtight state is maintained.

Above the process chamber 101, there is provided a vacuum chuck 104 for sucking a wafer 103 as a substrate to be processed. This vacuum chuck 10
The pipe 104a, which is the exhaust line 4, is connected to an external vacuum exhaust device (not shown). A gas supply pipe 105 is connected in the middle of the pipe 104a, and by supplying a gas such as nitrogen (N ₂ ) gas into the vacuum chuck 104 through the gas supply pipe 105, the wafer 103 can be removed. Has become.

A heater 106 for heating the wafer 103 and a temperature sensor 107 for monitoring the temperature of the wafer 103 are provided above the process chamber 101. As a result, the wafer 10
The silylation process can be performed while controlling the temperature of the sample No. 3.

The lower portion of the process chamber 101 has a concave portion of a predetermined size constituting an internal space for filling the silylating agent gas when the process chamber 101 is closed. At the bottom of the process chamber 101, a vacuum exhaust pipe 108 and a gas supply pipe 109,
110 are provided.

The other end of the vacuum exhaust pipe 108 is connected to a vacuum exhaust device (not shown) so that the process chamber 101 can be evacuated while the process chamber 101 is closed. The gas supply pipe 109 is for introducing a silylating agent gas into the process chamber 101. The other end of the gas supply pipe 109 is connected to a raw material container (not shown) containing a silylating agent via a hot block (not shown). The silylation agent gas supplied from the gas supply pipe 109 is supplied to the wafer 10 via the microporous mesh 111 and the diffusion plate 112.
3 are supplied on average over the entire surface. As the diffusion plate 112, for example, a sintered metal plate of stainless steel is used. The diffusion plate 112 is fixed by an O-ring 113 made of, for example, heat-resistant silicon rubber.
The gas supply pipe 110 is a pipe for purging inside the process chamber 101. The other end of the gas supply pipe 110 has a gas cylinder (not shown) containing, for example, N ₂ gas.
Is connected to

A jig 114 provided on the upper surface of the lower portion of the process chamber 101 holds the wafer 103 installed on the upper portion of the process chamber 101 when the process chamber 101 is closed.

Next, a gas-phase silylation method using the above-mentioned conventional gas-phase silylation apparatus will be described.

That is, the wafer 103 on which the exposed resist film (not shown) is formed is introduced into the process chamber 101 of the gas-phase silylation apparatus shown in FIG. The wafer 103 is sucked by a vacuum chuck 104 onto a predetermined wafer installation surface above the process chamber 101. The inside of the process chamber 101 is evacuated to a predetermined degree of vacuum through a vacuum exhaust pipe 108. Then, the wafer 103 is moved to, for example, 100 by the heater 107.
C., and a silylation agent gas is introduced into the process chamber 101 through the gas supply pipe 109 for, for example, 60 seconds, so that the exposed resist film formed on the surface of the wafer 103 is subjected to a silylation treatment in a gas phase. I do.

After completion of the silylation process, the gas supply pipe 109
Supply of the silylating agent gas by the
The inside of the process chamber 101 is evacuated through 8 and then N ₂ gas is supplied to the inside of the process chamber 101 through a gas supply pipe 111 as a purge line for purging. Then, N ₂ gas is sent into the vacuum chuck 104 through the gas supply pipe 105, and the wafer 10
Leave 3

After that, the wafer 103 is taken out of the process chamber 101, and the resist film after the silylation treatment is dry-developed by using O ₂ plasma.
The resist film is patterned into a predetermined shape.

[0016]

However, in the conventional gas-phase silylation apparatus described above, the wafer 103 is not treated during the treatment.
Was fixed inside the process chamber 101. For this reason, in the conventional gas-phase silylation method using the conventional gas-phase silylation apparatus, unevenness of the silylation agent gas or temperature unevenness occurs on the surface of the wafer 103 as a substrate to be processed, depending on the characteristics of the apparatus. There is a problem that occurs. As a result, there has been a problem that the line width of the resist pattern obtained by developing the resist after the silylation treatment varies within the wafer surface.

Accordingly, an object of the present invention is to improve the non-uniformity of the process gas concentration and temperature distribution on the surface of a substrate to be processed, and to perform a uniform processing in the surface of the substrate to be processed. An object of the present invention is to provide a processing device.

[0018]

In order to achieve the above object, a first aspect of the present invention is a vapor phase processing apparatus for processing a substrate to be processed in a processing chamber in a vapor phase. The present invention is characterized in that the processing substrate is subjected to the gas phase processing while rotating and / or revolving.

According to a second aspect of the present invention, in a vapor phase processing apparatus in which a substrate to be processed is subjected to vapor phase processing in a processing chamber, the substrate is subjected to vapor phase processing while being translated in the processing chamber. It is characterized by the following.

The gas phase processing apparatus according to the first aspect of the present invention typically has a substrate stage which holds a substrate to be processed in a processing chamber and is rotatable around a central axis. By rotating, the substrate to be processed rotates and / or
Alternatively, gas phase processing is performed while revolving. Here, in the case where the substrate to be processed is subjected to the vapor-phase processing using the vapor-phase processing apparatus, the viewpoint of performing the uniform vapor-phase processing in the plane of the substrate to be processed and the hindrance of the vapor-phase processing in the processing chamber. From the viewpoint of preventing the generation of such an airflow, the number of rotations of the substrate stage is preferably selected, for example, from 5 to 100 rotations per second, and more preferably, from 5 to 40 rotations per second. It is.

The gas phase processing apparatus according to the second aspect of the present invention typically has a substrate stage capable of holding a substrate to be processed in a processing chamber and moving in parallel, and moving the substrate stage in parallel. Then, a gas-phase process is performed while moving the substrate to be processed in parallel.

According to the gas phase processing apparatus of the present invention configured as described above, the substrate to be processed is subjected to the gas phase processing while rotating and / or revolving, or the substrate to be processed is parallelized. By performing the gas phase processing while moving, the non-uniformity of the process gas concentration and the temperature distribution on the surface of the substrate to be processed is improved. Can be processed.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the embodiments, the same or corresponding portions are denoted by the same reference numerals.

FIG. 1 is a schematic diagram showing an example of the configuration of a gas-phase silylation apparatus according to a first embodiment of the present invention.

As shown in FIG. 1, the gas-phase silylation apparatus has a process chamber 1 which can be opened and closed. When the process chamber 1 is closed, the upper and lower portions thereof have O-rings 2 made of, for example, heat-resistant silicon rubber.
Through each other so that an airtight state is maintained.

The lower portion of the process chamber 1 has, for example, a cylindrical shape. Inside a lower portion of the process chamber 1, for example, a disk-shaped wafer stage 4 for mounting a wafer 3 as a substrate to be processed is provided. A rotating shaft 5 is attached to a lower portion of the wafer stage 4. The central axis of the wafer stage 4 and the central axis of the rotating shaft 5 substantially coincide with each other. The rotation shaft 5 is rotatable around its center axis by a rotation mechanism (not shown) such as a motor, and the wafer stage 4 is rotatable around its center axis by rotation of the rotation shaft 5. ing. The rotation of the wafer stage 4 and the rotation shaft 5 can be controlled by predetermined rotation control means. An O-ring 6 made of, for example, heat-resistant silicon rubber is provided on an inner peripheral portion below the process chamber 1 so as to surround the wafer stage 4. The O-ring 6 has a role of maintaining the airtight state inside the process chamber 1 while reducing friction when the wafer stage 4 rotates.

The wafer stage 4 is provided with a vacuum chuck 7 for sucking the wafer 3. A pipe 7 a serving as an exhaust line of the vacuum chuck 7 extends to the outside of the process chamber 1 through the center axis of the wafer stage 4 and the rotating shaft 5, and is connected to one end of the pipe 8. A seal between the pipe 7a and the pipe 8 at the connection portion 8a is provided by an O-ring 9. The pipe 7a is rotatably connected to the pipe 8, and the pipe 7a is rotatable integrally with the wafer stage 4 when the wafer stage 4 rotates. The other end of the pipe 8 is connected to a vacuum exhaust device (not shown). A gas supply pipe 10 is connected in the middle of the pipe 8, and the wafer 3 can be removed by supplying a gas such as N ₂ gas into the vacuum chuck 7 through the gas supply pipe 10. .

This gas-phase silylation treatment apparatus is also provided with a heater 11 for heating the wafer stage 4, and therefore for heating the wafer 3, and a temperature sensor 12 for monitoring the temperature of the wafer 3. Have been.
Thus, the processing can be performed while controlling the temperature of the wafer 3. Here, the heater 11 is fixed to the process chamber 1 so that the heater 11 does not rotate even when the wafer stage 4 rotates.
Thereby, the non-uniformity of the temperature distribution when the wafer 3 is heated by the heater 11 is improved. The temperature sensor 12 is fixed at a predetermined position inside the wafer stage 4, for example. A signal line (not shown) from the temperature sensor 12 is led out through, for example, the wafer stage 4 and the center axis of the rotating shaft 5, and is connected to, for example, a predetermined temperature controller (not shown). .

The upper portion of the process chamber 1 has a concave portion of a predetermined size constituting an internal space for filling the silylating agent gas when the process chamber 1 is closed. An evacuation pipe 13 and gas supply pipes 14 and 15 communicating with the inside are provided at the upper part of the process chamber 1. The other end of the vacuum exhaust pipe 13 is connected to a vacuum exhaust device (not shown) so that the process chamber 1 can be evacuated while the process chamber 1 is closed. The gas supply pipe 14 is for introducing a silylating agent gas into the process chamber 1. The other end of the gas supply pipe 14 is connected via a hot block (not shown) to a raw material container (not shown) containing a silylating agent. The silylation agent gas supplied from the gas supply pipe 14 is supplied to the microporous mesh 16 and the diffusion plate 1.
Through 7, the entire surface of the wafer 3 is supplied on average. The diffusion plate 17 is made of, for example, a sintered metal plate of stainless steel, and can transmit a silylating agent gas. The diffusion plate 17 is fixed by an O-ring 18 made of, for example, heat-resistant silicon rubber. The gas supply pipe 15 is a pipe for purging inside the process chamber 1, and the other end of the gas supply pipe 15 is connected to a gas cylinder (not shown) containing, for example, N ₂ gas.

Although not shown, a predetermined vacuum gauge for monitoring the internal pressure is provided in the process chamber 1 of the gas-phase silylation apparatus, and a pipe 8 and a gas supply pipe 10 are provided. , Vacuum exhaust pipe 13, gas supply pipe 1
A predetermined valve is provided in the middle of each of the gas supply pipe 4 and the gas supply pipe 15.

Next, the gas-phase silylation method according to the first embodiment will be described. Here, as an example, a case in which an exposed resist formed on a wafer is subjected to a silylation process will be described. In the first embodiment, the wafer 3 is rotated in order to increase the uniformity of the silylation process.

In the gas-phase silylation method according to the first embodiment, the gas-phase silylation apparatus shown in FIG.
The silylation treatment of the resist is performed as follows.

First, prior to the silylation treatment, as shown in FIG. 2A, for example, silicon dioxide (Si) is coated on the entire surface of a wafer 3 such as a silicon (Si) wafer.
A positive resist film 22 mainly composed of, for example, polyvinylphenol resin is formed via an interlayer insulating film 21 such as an O ₂ ) film. The thickness of the resist film 22 is, for example, 800 nm. Next, a desired pattern such as an LSI circuit pattern is transferred to the resist film 22 by performing exposure using, for example, an ArF exposure apparatus having an exposure wavelength of 193 nm. In the figure, the exposed portion 22a of the resist film 22 is stippled.

Next, the wafer 3 in the state shown in FIG.
The substrate to be processed is introduced into the gas-phase silylation apparatus shown in FIG. That is, the process chamber 1 of the gas-phase silylation apparatus
The wafer 3 in the state shown in FIG. 2A is placed on the wafer stage 4 so that the surface to be processed faces upward, and is brought into close contact with the wafer stage 4 by the vacuum chuck 7. At this time, for example, by making the center of the wafer 3 substantially coincide with the center of the wafer stage 4, when the wafer stage 4 rotates, the wafer 3 can be rotated around its center. Next, the process chamber 1 is closed, and the inside of the process chamber 1 is evacuated to a predetermined degree of vacuum through the evacuation pipe 13. Next, the wafer stage 4 is moved to the
While heating to about 0 ° C., the wafer stage 4 is rotated in a predetermined direction at a predetermined rotation speed by a rotation mechanism not shown. Here, the rotation speed of the wafer stage 4 is
From the viewpoint of performing the silylation process uniformly in the plane of the wafer 3 and from the viewpoint of preventing an air flow that disturbs the flow of the silylating agent gas in the process chamber 1, preferably, for example, every second It is selected from 5 to 100 rotations, and more preferably, for example, from 5 to 40 rotations per second. Here, as an example, the wafer stage 4 is rotated at a rotation speed of 5 rotations per second.

When the temperature and the number of rotations of the wafer stage 4 reach a steady state, the supply of the silylating agent gas into the process chamber 1 through the gas supply pipe 14 is started. As a raw material of the silylating agent gas, for example, HMDS having a trimethylsilyl group is used. In this case, for example, N ₂ gas is introduced into a raw material container (not shown) such as a bubbler containing HMDS to perform bubbling,
The silylating agent gas thus obtained is heated to a predetermined temperature by a hot block (not shown), and supplied to the inside of the process chamber 1 through a gas supply pipe 14.
The time for introducing the silylating agent gas into the process chamber 1 is, for example, 60 seconds. Thereby, as shown in FIG. 2B, the resist film 22 is subjected to a silylation process in a gas phase, and a silylated layer 23 is selectively formed on the surface of the unexposed portion of the resist film 22.

Next, the supply of the silylating agent gas from the gas supply pipe 14 is stopped, and the inside of the process chamber 1 is evacuated by the vacuum exhaust pipe 13. _Two gases are supplied to purge the inside of the process chamber 1.

Next, the wafer 3 in the state shown in FIG. 2B is introduced into an etching apparatus, and the silylated resist film 22 is dry-developed using O ₂ plasma. Thus, a resist pattern 24 having a predetermined shape is formed as shown in FIG. 2C.

As described above, according to the first embodiment, in the gas-phase silylation apparatus, the wafer stage 4 provided inside the process chamber 1 is rotatable around its central axis. Since the silylation process can be performed while rotating (rotating) the wafer 3,
The non-uniformity of the concentration distribution and temperature distribution of the silylating agent gas on the surface of the wafer 3 is improved. Thereby, the silylation process of the resist can be performed uniformly in the plane of the wafer 3. At this time, the rotation speed of the wafer stage 4 is
The wafer stage 4 is selected during processing because it is selected so as not to generate an air flow that disrupts the flow of the silylating agent gas.
The adverse effect caused by rotating is suppressed.

Further, as described above, since the silylation process can be performed uniformly on the wafer surface, the line width of the resist pattern obtained by developing the resist film after the silylation process can be reduced. Can be made almost uniform. Therefore, by performing etching using this resist pattern as a mask, a good pattern can be formed on the film to be etched (for example, the interlayer insulating film 21 in FIG. 2). Therefore, the semiconductor device is designed based on fine design rules, and is extremely effective for manufacturing a semiconductor device that requires high integration, high performance, and high reliability.

Next, a second embodiment of the present invention will be described. FIG. 3 is a schematic diagram showing an example of the configuration of a gas-phase silylation apparatus according to a second embodiment of the present invention, and FIG. 4 is a plan view of a wafer stage of the gas-phase silylation apparatus shown in FIG. This gas-phase silylation apparatus is capable of processing a plurality of wafers at a time. Here, a gas-phase silylation apparatus capable of processing three wafers at a time will be described as an example.

As shown in FIGS. 3 and 4, in the gas-phase silylation apparatus according to the second embodiment, three disk-shaped sub-stages 31 are provided on the upper surface of the wafer stage 4. These sub-stages 31 are arranged almost uniformly on the wafer stage 4.

A rotating shaft 32 is attached to the lower part of each substage 31. The central axis of the sub-stage 31 and the central axis of the rotating shaft 32 substantially coincide with each other. The rotating shaft 32 is rotatable around its central axis by a rotating mechanism (not shown).
Is rotatable around its central axis by the rotation of the rotating shaft 32. Around the side of the substage 31,
For example, an O-ring 33 made of heat-resistant silicon rubber is provided. In this gas-phase silylation apparatus, it is possible to rotate the sub-stage 31 while rotating the wafer stage 4.

Each sub-stage 31 can have a wafer 3 as a substrate to be processed on its upper surface.
A vacuum chuck 7 for sucking the wafer 3 is provided for each sub-stage 31. A pipe 7 a, which is an exhaust line of the vacuum chuck 7, passes through the central axes of the sub-stage 31 and the rotating shaft 32 and is connected to a pipe 34 provided inside the wafer stage 4. That is, the pipe 3
Numeral 4 is branched into three inside the wafer stage 4, and the ends of the branched portions are respectively connected to the sub-stages 3.
It extends to below the pipe 7a of the vacuum chuck 7 provided for each. The pipe 6a and the pipe 3 at the joint 34a
The seal with 4 is performed by an O-ring 35. Piping 6a
Is rotatably connected to the pipe 34,
When the substage 31 rotates, the pipe 6a rotates integrally with the substage 31. The pipe 34 extends to the outside of the process chamber 1 through the center axis of the wafer stage 4 and the rotation shaft 5, and is connected to the pipe 8. The O-ring 9 seals the pipe 34 and the pipe 8 at the connection portion 8a. The pipe 34 is rotatably connected to the pipe 8, and the pipe 34 rotates integrally with the wafer stage 4 when the wafer stage 4 rotates.

Other structures of the gas-phase silylation apparatus according to the second embodiment are the same as those of the gas-phase silylation apparatus according to the first embodiment, and therefore, description thereof is omitted.

Next, a gas-phase silylation method according to the second embodiment will be described. In the second embodiment, the resist is subjected to silylation using a gas-phase silylation apparatus shown in FIG. 3. In this case, in order to improve the uniformity of the silylation, each of the wafers 3 is processed during the processing. Rotate and revolve.

That is, the wafer 3 on which the exposed resist is formed, that is, the wafer 3 in the state shown in FIG. 2A is placed on the sub-stage 31 of the wafer stage 4, respectively, and the wafer stage 4 and the sub-stage 31 are respectively set. The silylation process is performed while rotating the wafer 3 so as to rotate and revolve. At this time, by making the center of the wafer 3 substantially coincide with the center of the sub-stage 31, the wafer stage 4
When the sub-stage 31 rotates, the wafer 3 can revolve around the center of the wafer stage 4 while rotating around its center. Here, wafer stage 4 and substage 3
As an example of the number of rotations of 1, the number of rotations of the wafer stage 4 is, for example, 5 rotations per second, and the number of rotations of the sub-stage 31 is, for example, 8 rotations per second.

The other configuration of the gas-phase silylation method according to the second embodiment is the same as that of the gas-phase silylation method according to the first embodiment, and therefore the description is omitted.

As described above, according to the second embodiment, the first
In this case, since the orbital movement is added to the movement of the wafer 3 during the silylation treatment, the unevenness of the treatment between the central part and the peripheral part of the wafer can be obtained. It also has the advantage that the properties are more effectively improved.

Next, a third embodiment of the present invention will be described. FIG. 5 is a schematic diagram showing a configuration of a gas-phase silylation apparatus according to a third embodiment of the present invention.

As shown in FIG. 5, in this gas-phase silylation apparatus, a parallel movable wafer stage 4 is provided inside a process chamber 1. The process chamber 1 has an internal space large enough to translate the wafer stage 4 inside. A portion from the lower end of the lower portion of the process chamber 1 to the lower portion of the rotating shaft 5 is covered with a deformable (flexible) cover 41. This cover 41 has heat resistance and airtightness. Reference numeral 42 denotes a ring-shaped attachment for attaching the cover 41 to a lower portion of the rotating shaft 5. The seal between the attachment 42 and the rotating shaft 5 is performed by an O-ring 43 made of, for example, heat-resistant silicon rubber. The O-ring 43 has a role of maintaining the airtight state inside the process chamber 1 while reducing friction when the rotating shaft 5 rotates. In this gas-phase silylation apparatus, the wafer stage 4 can translate in a predetermined plane while rotating around its central axis.

The other configuration of the gas-phase silylation apparatus according to the third embodiment is the same as that of the gas-phase silylation apparatus according to the first embodiment, and therefore, the description is omitted.

Next, a gas-phase silylation method according to the third embodiment will be described. In the third embodiment, the resist is subjected to silylation using a gas-phase silylation apparatus shown in FIG. 5, and at this time, the wafer 3 is rotated during the processing to improve the uniformity of the silylation. At the same time, and translate in one plane.

That is, the wafer 3 on which the exposed resist is formed, that is, the wafer 3 in the state shown in FIG. 2A is set on the wafer stage 4, and the wafer stage 4 is translated while rotating, whereby the wafer is moved. The silylation process is performed while rotating 3 and translating it in one plane.

In the third embodiment, from the viewpoint of improving the uniformity of the silylation process, when the wafer stage 4 is moved in parallel, the center of the wafer stage 4 has a locus having a predetermined two-dimensional shape. To draw. FIG. 6 shows an example of a movement pattern of the wafer stage 4. In the example shown in FIG. 6, the wafer stage 4 is moved so that the center of the wafer stage 4 sequentially and repeatedly draws the fan-shaped trajectories 51 to 58 starting from the center of the process chamber 1, that is, the origin O. As a result, the wafer stage 4 moves almost uniformly inside the process chamber 1 while drawing a trajectory in which a figure eight is repeated. This also reduces the footprint of the gas-phase silylation apparatus and saves the cost of the apparatus. 7A to 7H are schematic diagrams illustrating a state of movement of the wafer stage 4. In the initial state, the center of the wafer stage 4 is located, for example, at the origin O, which is the center of the process chamber 1, and as shown in FIGS. The center of the wafer stage 4 draws trajectories 51 to 58 by sequentially moving the wafer stage 4 in parallel. Here, the number of rotations of the wafer stage 4 is, for example, 25 rotations per second, and the center of the wafer stage 4 goes around one locus (for example, locus 51) from the origin O and returns to the origin O again.
Is, for example, 1/3 second.

The other configuration of the gas-phase silylation method according to the third embodiment is the same as that of the gas-phase silylation method according to the first embodiment, and therefore the description is omitted.

As described above, according to the third embodiment, the first
In this case, the same advantage as that of the embodiment can be obtained. At this time, since the parallel movement within the plane is added to the movement of the wafer 3, the non-uniformity of the silylation process in the wafer plane is reduced over the entire surface. Improved more effectively.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical idea of the present invention are possible. For example, the numerical values, materials, structures, processes, and the like described in the embodiments are merely examples,
It is not limited to this. Specifically, in the above-described first to third embodiments, the case where the silylation treatment is performed on the positive resist is described as an example, but the resist may be a negative resist. Further, in the above-described first to third embodiments, the case where the silylation treatment of the resist is performed as the vapor-phase silylation method has been described. Can be applied to the silylation treatment.

Further, in the above-described first embodiment,
The wafer 3 is placed substantially at the center of the wafer stage 4 (the center of the wafer 3 and the center of the wafer stage 4 are made to substantially coincide with each other), and the silylation process is performed while rotating the wafer 3. By installing the wafer 3 around the wafer stage 4, the silylation process can be performed while revolving the wafer 3.

Further, in the above-described second embodiment,
Although the wafer stage 4 and the substage 31 are both rotated, it is also possible to rotate only the wafer stage 4 or to rotate only the substage 31. Wafer stage 4
When only the wafer is rotated, the movement of the wafer 3 during the silylation process is only the revolution, and when only the sub-stage 31 is rotated, the movement of the wafer 3 during the silylation process is only the rotation.

Further, in the above-described second embodiment,
Although the case where three substages 31 are provided on the wafer stage 4 has been described as an example, the number of substages 31 may be four or more. Further, the number of substages 31 may be two or one.

In the third embodiment described above,
When the wafer stage 4 is translated, the wafer stage 4 is rotated. However, it is also possible to translate the wafer stage 4 without rotating it.
In this case, the movement of the wafer 3 during the silylation process is only a parallel movement.

The movement pattern of the wafer stage 4 in the above-described third embodiment is merely an example, and the wafer stage 4 may be moved in a pattern different from the illustrated one.

For example, the above-described second and third embodiments may be combined, and the silylation process may be performed while rotating and orbiting the wafer 3 and moving it in parallel.

Further, in the above-described first to third embodiments, the case where the present invention is applied to a gas-phase silylation apparatus has been described. The present invention can be applied to general vapor processing apparatuses configured as described above.

[0065]

As described above, according to the present invention, the substrate to be processed is subjected to the gas phase processing while rotating and / or revolving, or the substrate is processed while moving in parallel. By performing the phase processing, the non-uniformity of the distribution of the process gas concentration and the temperature on the surface of the substrate to be processed is improved, so that a uniform gas phase processing can be performed in the surface of the substrate to be processed. It is possible to obtain a vapor-phase processing apparatus that can be used.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating an example of a configuration of a gas-phase silylation apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining a gas-phase silylation method according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram illustrating an example of a configuration of a gas-phase silylation apparatus according to a second embodiment of the present invention.

4 is a plan view of a wafer stage of the gas-phase silylation apparatus shown in FIG.

FIG. 5 is a schematic diagram illustrating an example of a configuration of a gas-phase silylation apparatus according to a third embodiment of the present invention.

FIG. 6 is a plan view showing an example of a movement pattern of a wafer stage in a gas-phase silylation method according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating a state of movement of a wafer stage.

FIG. 8 is a schematic diagram illustrating an example of a configuration of a conventional gas-phase silylation apparatus.

[Explanation of symbols]

1 ... Process chamber, 3 ... Wafer, 4 ...
・ Wafer stage, 5, 32 ... rotating shaft, 7 ...
Vacuum chuck, 7a, 8, 34 ... piping, 11 ...
Heater, 12 Temperature sensor, 13 Vacuum exhaust pipe, 14, 15 Gas supply pipe, 31 Substage

Claims (16)

[Claims] 1. A gas-phase processing apparatus in which a substrate to be processed is subjected to vapor-phase processing in a processing chamber, wherein the substrate is subjected to vapor-phase processing while rotating and / or revolving in the processing chamber. Characteristic gas phase processing equipment. 2. The gas-phase processing apparatus includes a substrate stage that holds the substrate to be processed in the processing chamber and is rotatable around a central axis. The substrate stage is rotated to rotate the substrate stage. 2. A process according to claim 1, wherein the processing substrate is subjected to a gas phase process while rotating and / or revolving.
The vapor-phase processing apparatus as described in the above. 3. The gas phase processing apparatus according to claim 2, wherein the substrate stage has a substage that holds the substrate to be processed and is rotatable around a central axis. 4. The vapor phase processing apparatus according to claim 3, wherein the substrate stage and the substage are rotated to perform the vapor phase processing while rotating and revolving the substrate to be processed. . 5. The apparatus according to claim 3, wherein the substrate stage has a plurality of the substages. 6. The substrate stage is movable in parallel, and by rotating and moving the substrate stage in parallel, the substrate to be processed is rotated and / or revolved and is subjected to gas phase processing while being translated. 3. The gas phase processing apparatus according to claim 2, wherein: 7. The vapor-phase processing apparatus according to claim 1, wherein said vapor-phase processing apparatus has heating means for heating said substrate to be processed. 8. The gas-phase processing apparatus according to claim 1, wherein said gas-phase processing apparatus is a gas-phase silylation apparatus. 9. A vapor-phase processing apparatus in which a substrate to be processed is subjected to a vapor-phase processing in a processing chamber, wherein the substrate is subjected to a vapor-phase processing while being translated in the processing chamber. Gas phase processing equipment. 10. The gas-phase processing apparatus has a substrate stage that can hold the substrate to be processed in the processing chamber and can move in parallel, and moves the substrate stage in parallel to move the substrate to be processed. 10. The gas phase processing apparatus according to claim 9, wherein the gas phase processing is performed while moving in parallel. 11. The substrate stage is rotatable around a central axis, and the substrate to be processed is rotated and / or translated by rotating and parallel moving the substrate stage.
The gas phase processing apparatus according to claim 10, wherein the gas phase processing is performed while revolving and moving in parallel. 12. The vapor-phase processing apparatus according to claim 10, wherein the substrate stage has a sub-stage that holds the substrate to be processed and is rotatable around a central axis. 13. The substrate stage and the sub-stage are rotated and the substrate stage is moved in parallel, whereby the substrate to be processed is rotated and revolved, and is subjected to gas phase processing while being moved in parallel. The vapor-phase processing apparatus according to claim 12, wherein: 14. The apparatus according to claim 12, wherein said substrate stage has a plurality of said substages. 15. The gas phase processing apparatus according to claim 9, wherein said gas phase processing apparatus has a heating means for heating said substrate to be processed. 16. The gas phase processing apparatus according to claim 9, wherein said gas phase processing apparatus is a gas phase silylation apparatus.