TW202005075A - Flexible micro LED display - Google Patents

Flexible micro LED display Download PDF

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TW202005075A
TW202005075A TW107118243A TW107118243A TW202005075A TW 202005075 A TW202005075 A TW 202005075A TW 107118243 A TW107118243 A TW 107118243A TW 107118243 A TW107118243 A TW 107118243A TW 202005075 A TW202005075 A TW 202005075A
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trench
micro
flexible
display device
emitting diode
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TW107118243A
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Chinese (zh)
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TWI681555B (en
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楊雅雯
劉品妙
謝嘉定
楊文瑋
陳振彰
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友達光電股份有限公司
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Priority to CN201810822594.2A priority patent/CN109037269B/en
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Publication of TW202005075A publication Critical patent/TW202005075A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A flexible micro-LED display device including a flexible substrate, a plurality of pixel units, a plurality of active devices, a plurality of micro-LED devices, an encapsulation layer, and at least one trench is provided. The pixel units and the active devices are disposed on the flexible substrate. The micro-LED devices are disposed on the flexible substrate and electrically connected with corresponding active device respectively. The encapsulation layer is covered the micro-LED devices and has a first surface away from the flexible substrate. The trench has an extension direction and is disposed on the first surface of the encapsulation layer. The depth of the trench in the vertical projection direction is smaller than the thickness of the encapsulation layer in the vertical projection direction. The trench is located between two adjacent pixel units. In the vertical projection direction, the trench does not overlap with the micro-LED devices and the active devices.

Description

可撓曲微發光二極體顯示裝置Flexible micro-luminescence diode display device

本發明是有關於一種顯示裝置,且特別是有關於一種可撓曲微發光二極體顯示裝置。The present invention relates to a display device, and in particular to a flexible micro-luminous diode display device.

隨著携帶式顯示裝置被廣泛地應用,針對可撓曲(flexible)顯示裝置之開發也越趨積極,以實現於不同曲面下仍可顯示的目的。然而,如何提升顯示裝置的可撓性與影像解析度,實已成目前亟欲解決的課題。As portable display devices are widely used, the development of flexible display devices is becoming more and more active in order to achieve the purpose of being displayable under different curved surfaces. However, how to improve the flexibility and image resolution of the display device has become an urgent issue to be solved.

本發明提供一種可撓曲微發光二極體發光裝置,其可達到提升發光二極體顯示裝置的可撓性與影像解析度。The invention provides a flexible micro light-emitting diode light-emitting device, which can improve the flexibility and image resolution of the light-emitting diode display device.

本發明提供一種可撓曲微發光二極體顯示裝置,其包括可撓性基板、多個畫素單元、多個主動元件、多個微發光二極體元件、封裝層以及至少一溝渠。畫素單元設置於可撓性基板上。主動元件設置於可撓性基板上。微發光二極體元件位於可撓性基板上。微發光二極體元件分別與對應的主動元件電性連接,且各畫素單元包括至少一主動元件以及至少一微發光二極體元件。封裝層覆蓋微發光二極體元件,封裝層具有第一表面,其中第一表面遠離可撓性基板。溝渠具有一延伸方向。溝渠設置於封裝層的第一表面。溝渠於垂直投影方向上的深度小於封裝層於垂直投影方向上的厚度。溝渠設置於在兩相鄰的畫素單元之間。於垂直投影方向上溝渠與微發光二極體元件及主動元件不重疊。The invention provides a flexible micro light-emitting diode display device, which includes a flexible substrate, a plurality of pixel units, a plurality of active elements, a plurality of micro-light emitting diode elements, a packaging layer, and at least one trench. The pixel unit is disposed on the flexible substrate. The active device is disposed on the flexible substrate. The micro light emitting diode element is located on the flexible substrate. The micro light emitting diode elements are electrically connected to the corresponding active elements, and each pixel unit includes at least one active element and at least one micro light emitting diode element. The encapsulation layer covers the micro-luminescent diode element. The encapsulation layer has a first surface, wherein the first surface is away from the flexible substrate. The ditch has an extending direction. The trench is disposed on the first surface of the encapsulation layer. The depth of the trench in the vertical projection direction is smaller than the thickness of the packaging layer in the vertical projection direction. The ditch is disposed between two adjacent pixel units. In the vertical projection direction, the trench does not overlap with the micro light emitting diode element and the active element.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。The invention is explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various forms, and should not be limited to the embodiments described herein.

在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件”上”或”連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為”直接在另一元件上”或”直接連接到”另一元件時,不存在中間元件。如本文所使用的,”連接”可以指物理及/或電性連接。再者,電性連接或耦接可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “connected to” another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, the electrical connection or coupling may be that there are other elements between the two elements.

應當理解,儘管術語“第一”與“第二”等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的“第一元件”、“部件”、“區域”、“層”、或“部分”可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, components, regions, layers and/or parts, these elements, components, regions, and/or parts should not be affected by Limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Accordingly, the "first element", "component", "region", "layer", or "portion" discussed below may be referred to as the second element, component, region, layer, or section without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的,而不是限制性的。如本文所使用的,除非內容清楚地指示,否則單數形式“一”、“一個”和“該”旨在包括複數形式,包括“至少一個”。“或”表示“及/或”。如本文所使用的,術語“及/或”包括一個或多個相關所列項目的任何和所有組合。還應當理解,當在本說明書中使用時,術語“包括”及/或“包括”指定所述特徵、區域、整體、步驟、操作、元件的存在及/或部件,但不排除一個或多個其它特徵、區域整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, unless the content clearly indicates, the singular forms "a", "an", and "the" are intended to include the plural forms, including "at least one." "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "including" and/or "comprising" designate the described features, regions, wholes, steps, operations, presence of elements and/or components, but do not exclude one or more The presence or addition of other features, regions as a whole, steps, operations, elements, components, and/or combinations thereof.

此外,諸如“下”或“底部”和“上”或“頂部”的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的“下”側的元件將被定向在其他元件的“上”側。因此,示例性術語“下”可以包括“下”和“上”的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件“下方”或“下方”的元件將被定向為在其它元件“上方”。因此,示例性術語 “下面”或“下面”可以包括上方和下方的取向。In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship between one element and another element, as shown. It should be understood that relative terms are intended to include different orientations of the device than those shown in the figures. For example, if the device in one drawing is turned over, the element described as being on the "lower" side of the other element will be oriented on the "upper" side of the other element. Thus, the exemplary term "lower" may include "lower" and "upper" orientations, depending on the particular orientation of the drawings. Similarly, if the device in one drawing is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. Thus, the exemplary terms "below" or "below" can include an orientation of above and below.

本文使用的”約”、”近似”、”實質上”、或”大致上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,”約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、”近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about", "approximately", "substantially", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by those of ordinary skill in the art, taking into account the The measurement in question and the specific number of errors associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can be based on optical properties, etching properties, or other properties to select a more acceptable range of deviation or standard deviation, and one standard deviation can be applied to all properties .

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

圖1A是依照本發明的第一實施例的一種可撓曲微發光二極體顯示裝置的局部上視示意圖。圖1B是沿圖1A中A-A’剖線的剖面圖。圖1C是圖1B中R1區域的彎折示意圖。為求清楚表示,於圖1A中省略繪示了部分的膜層與構件。並且,主動元件120或其與訊號線150之間的連接線路不會出現在圖1A,但圖1B仍繪示出主動元件120及前述的連接線X於剖面圖,以清楚表示訊號線150、主動元件120及微發光二極體130彼此之間的連接關係。另外,為求清楚表示撓曲狀態下的可撓曲微發光二極體顯示裝置100,於圖1C中僅示例性的繪示撓曲狀態下的封裝層140及對應的微發光二極體元件130的關係。FIG. 1A is a partial schematic top view of a flexible micro-luminescent diode display device according to a first embodiment of the present invention. Fig. 1B is a cross-sectional view taken along line A-A' in Fig. 1A. FIG. 1C is a schematic diagram of the bending of the R1 region in FIG. 1B. For clarity, parts of the film layers and components are omitted in FIG. 1A. Moreover, the active element 120 or the connection line between it and the signal line 150 will not appear in FIG. 1A, but FIG. 1B still shows the active element 120 and the aforementioned connection line X in a cross-sectional view to clearly indicate the signal line 150, The connection relationship between the active device 120 and the micro light emitting diode 130. In addition, in order to clearly show the flexible micro-luminescent diode display device 100 in the flexed state, only the encapsulation layer 140 in the flexed state and the corresponding micro-luminescent diode device are only exemplarily shown in FIG. 1C 130 relationship.

請參照圖1A及圖1B,可撓曲微發光二極體顯示裝置100可以包括可撓性基板110、多個畫素單元102、多個主動元件120、多個微發光二極體元件130、封裝層140以及訊號線150。可撓性基板110的材料可包括聚亞醯胺(polyimide;PI)、聚碳酸酯(polycarbonate;PC)、聚醚碸(polyethersulfone;PES)、聚丙烯酸酯(polyacrylate;PA)、聚原冰烯(polynorbornene;PNB)、聚乙烯對苯二甲酸酯(polyethylene terephthalate;PET)、聚醚醚酮(polyetheretherketone;PEEK)、聚萘二甲酸乙二醇酯(polyethylene naphthalate;PEN)、或聚醚亞醯胺(polyetherimide;PEI),但不以此為限而可為其它各種有機材料或有機/無機混合材料、或其他適宜的可撓性材料,但本發明不以此為限。1A and 1B, the flexible micro-luminescent diode display device 100 may include a flexible substrate 110, a plurality of pixel units 102, a plurality of active elements 120, a plurality of micro-luminescent diode elements 130, The encapsulation layer 140 and the signal line 150. The material of the flexible substrate 110 may include polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyacrylate (PA), polyorthocyanene (polynorbornene; PNB), polyethylene terephthalate (PET), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), or polyether Polyetherimide (PEI), but not limited to this, can be other various organic materials or organic/inorganic hybrid materials, or other suitable flexible materials, but the invention is not limited thereto.

多個畫素單元102與多個主動元件120設置於可撓性基板110上。多個主動元件120可以是以陣列排列的方式配置於可撓性基板110的基板表面110a上。換句話說,多個畫素單元102可以是陣列排列的方式配置於可撓性基板110上。各畫素單元102包括至少一主動元件120與至少一微發光二極體元件130,然本發明並不以此為限,各個主動元件120具有對應的閘極GE、源極S、汲極D和半導體層CH。閘極GE與半導體層CH之間可以具有閘極絕緣層GI。平坦層PV1可以覆蓋於主動元件120上。在本實施例中,主動元件120例如是薄膜電晶體(thin film transistor;TFT),圖1B中的主動元件120是以薄膜電晶體可為底部閘極型電晶體(bottom gate)為例,即閘極GE位於半導體層CH之下方。在其他實施例中,薄膜電晶體可為頂部閘極型(top gate,例如:閘極GE位於半導體層CH之上方),或立體型的電晶體(例如:半導體層CH位於不同的水平面上)、或其他適當型式的電晶體,但本發明不限於此。在其他實施例中,主動元件120也可以是其他型態之開關元件(switching device)。The plurality of pixel units 102 and the plurality of active elements 120 are disposed on the flexible substrate 110. The plurality of active elements 120 may be arranged on the substrate surface 110a of the flexible substrate 110 in an array arrangement. In other words, the plurality of pixel units 102 may be arranged on the flexible substrate 110 in an array. Each pixel unit 102 includes at least one active element 120 and at least one micro-luminescent diode element 130, but the invention is not limited to this, each active element 120 has a corresponding gate GE, source S, drain D And semiconductor layer CH. A gate insulating layer GI may be provided between the gate electrode GE and the semiconductor layer CH. The flat layer PV1 may cover the active element 120. In this embodiment, the active device 120 is, for example, a thin film transistor (TFT). The active device 120 in FIG. 1B takes the thin film transistor as a bottom gate transistor, for example. The gate electrode GE is located below the semiconductor layer CH. In other embodiments, the thin film transistor may be a top gate (for example: the gate GE is located above the semiconductor layer CH), or a three-dimensional transistor (for example: the semiconductor layer CH is located on a different horizontal plane) , Or other suitable types of transistors, but the invention is not limited thereto. In other embodiments, the active device 120 may also be a switching device of other types.

微發光二極體元件130配置於可撓性基板110的基板表面110a上,且多個微發光二極體元件130分別與對應的主動元件120電性連接。在一些實施例中,微發光二極體元件130與主動元件120中的汲極D進行電性連接,但本發明不以此為限。這些微發光二極體元件130可以具有實質上相同或不同的發光顏色。舉例而言,部分微發光二極體元件130可以發出紅色光,另外的部分微發光二極體元件130可以發出綠色光,而其餘的部分微發光二極體元件130可以發出藍色光,但本發明不以此為限。於其它實施例中,再其餘的微發光二極體元件130亦可發出其它色光,例如:白色光、黃色光、或其它合適的色光。The micro light emitting diode elements 130 are disposed on the substrate surface 110a of the flexible substrate 110, and the plurality of micro light emitting diode elements 130 are electrically connected to the corresponding active elements 120, respectively. In some embodiments, the micro-light emitting diode element 130 is electrically connected to the drain D in the active element 120, but the invention is not limited thereto. These micro light emitting diode elements 130 may have substantially the same or different light emitting colors. For example, part of the micro-emitting diode elements 130 can emit red light, another part of the micro-emitting diode elements 130 can emit green light, and the remaining part of the micro-emitting diode elements 130 can emit blue light, but this The invention is not limited to this. In other embodiments, the remaining micro-emitting diode elements 130 can also emit other colored lights, such as white light, yellow light, or other suitable colored lights.

在本實施例中,微發光二極體元件130的尺寸(即,投影於可撓性基板110的基板表面110a上的面積)可以為100微米×100微米以下,且微發光二極體元件130於垂直投影方向上的元件厚度L1可以是大於或約等於4微米(micrometer;μm)且小於或約等於30微米。In this embodiment, the size of the micro light emitting diode element 130 (that is, the area projected on the substrate surface 110a of the flexible substrate 110) may be 100 μm×100 μm or less, and the micro light emitting diode element 130 The element thickness L1 in the vertical projection direction may be greater than or approximately equal to 4 microns (micrometer; μm) and less than or approximately equal to 30 microns.

由於微發光二極體元件的尺寸較一般的發光二極體小很多,因此,可以在實質上相同的單位面積上放置更多的微發光二極體,進而提升顯示裝置的影像解析度。另外,由於發光二極體(包含但不限於微發光二極體元件)是藉由半導體製程將多個導電層、多個半導體層、發光層及絕緣層堆疊而成。因此,若發光二極體的尺寸過大(如:類似於具有較大尺寸的一般發光二極體,舉例而言大於約100微米以上),則所構成的顯示裝置會較難撓曲。除此之外,相較於以有機發光材料所構成的顯示裝置,由於有機發光材料會因水氣或氧氣造成無法修復的損壞,因此,有機發光材料所構成的顯示裝置常需具有多種額外的膜層(如,用於阻擋水氣或氧氣的阻障層(barrier layer))。另外,以有機發光材料所構成的顯示裝置,在處於長時間顯示靜態內容(即,顯示的亮度及/或色調不變的情況下)時,由於有機發光材料既有材料特性,即使顯示裝置上的內容已經改變,但先前長時間顯示靜態內容的區塊仍會持續出現殘影情況(即,俗稱的老化現象、燒屏或鬼影)。故,相較於以有機發光材料所構成的顯示裝置,以微發光二極體所構成的顯示裝置,除了可以撓曲外更具有較佳的產品壽命及顯示品質。Since the size of the micro light emitting diode element is much smaller than that of a general light emitting diode, more micro light emitting diodes can be placed on substantially the same unit area, thereby improving the image resolution of the display device. In addition, the light-emitting diodes (including but not limited to micro-light-emitting diode devices) are formed by stacking a plurality of conductive layers, a plurality of semiconductor layers, a light-emitting layer, and an insulating layer through a semiconductor manufacturing process. Therefore, if the size of the light-emitting diode is too large (for example, similar to a general light-emitting diode with a larger size, for example, greater than about 100 microns or more), the resulting display device will be more difficult to flex. In addition, compared to display devices composed of organic light-emitting materials, since organic light-emitting materials can be irreparably damaged by moisture or oxygen, display devices composed of organic light-emitting materials often need to have a variety of additional Membrane layer (for example, a barrier layer for blocking moisture or oxygen). In addition, when a display device composed of organic light-emitting materials displays static content for a long period of time (that is, the display brightness and/or hue remains unchanged), since the organic light-emitting materials have material characteristics, even if the display device The content of has changed, but the blocks that have been displaying static content for a long time will continue to have afterimages (that is, commonly known as aging, screen burning or ghosting). Therefore, compared to a display device composed of organic light-emitting materials, a display device composed of micro-luminescent diodes has better product life and display quality in addition to being flexible.

封裝層140覆蓋微發光二極體元件130。封裝層140的材料例如是光阻材料、環氧樹脂(epoxy resin)、矽樹脂、聚甲基丙烯酸甲酯(polymethyl methacrylate;PMMA)或其他適宜的可透光材料,而可使微發光二極體元件130所發出的光可以透射出去。在一些實施例中,封裝層140可以具有封裝厚度140h,封裝厚度140h可以是大於約30微米且小於或約等於300微米,但本發明不以此為限。在一些實施例中,封裝層140的楊氏模量(Young's Modulus)小於可撓性基板110的楊氏模量,因此可以提升封裝層140的被彎折程度,但本發明不以此為限。The encapsulation layer 140 covers the micro-light emitting diode element 130. The material of the encapsulation layer 140 is, for example, photoresist, epoxy resin, silicone resin, polymethyl methacrylate (PMMA), or other suitable light-transmitting materials, which can make the micro-luminescent diode The light emitted by the body element 130 can be transmitted out. In some embodiments, the encapsulation layer 140 may have an encapsulation thickness 140h. The encapsulation thickness 140h may be greater than about 30 microns and less than or equal to 300 microns, but the invention is not limited thereto. In some embodiments, the Young's Modulus of the encapsulation layer 140 is smaller than the Young's Modulus of the flexible substrate 110, so the degree of bending of the encapsulation layer 140 can be improved, but the invention is not limited thereto .

封裝層140具有彼此相對的第一表面140a與第二表面140b,其中第一表面140a遠離可撓性基板110。並且,例如可藉由蝕刻製程以於封裝層140的頂表面140a上形成至少一溝渠141(在本實施例中,是以兩個溝渠141a、141b為例),但不限於此。於其它實施例中,形成至少一溝渠141可用其它合適的方式,例如:壓印方式、雷射移除方式、或其它合適的方式。溝渠141設置於封裝層140的第一表面140a,溝渠141沿延伸方向141y沿伸,且溝渠141設置於兩相鄰的畫素單元102之間。溝渠141於可撓性基板110上的垂直投影(可撓性基板110的表面110a的法線方向上)與微發光二極體元件130及主動元件120不重疊。在圖1A及圖1B所繪示的可撓曲微發光二極體顯示裝置中,於未撓曲的狀態下,可撓性基板110的基板表面110a的法線方向例如為z方向,而溝渠141的延伸方向141y可以為對應的y方向,但本發明不限於此。藉由封裝層140上的至少一溝渠141,可以使可撓曲微發光二極體顯示裝置100於一對應的方向上可以被撓曲或彎曲。The encapsulation layer 140 has a first surface 140 a and a second surface 140 b opposite to each other, wherein the first surface 140 a is away from the flexible substrate 110. Moreover, for example, at least one trench 141 can be formed on the top surface 140a of the encapsulation layer 140 by an etching process (in this embodiment, two trenches 141a and 141b are used as examples), but it is not limited thereto. In other embodiments, at least one trench 141 may be formed by other suitable methods, such as imprinting method, laser removal method, or other suitable methods. The trench 141 is disposed on the first surface 140a of the encapsulation layer 140, the trench 141 extends along the extending direction 141y, and the trench 141 is disposed between two adjacent pixel units 102. The vertical projection of the trench 141 on the flexible substrate 110 (in the normal direction of the surface 110a of the flexible substrate 110) does not overlap with the micro light emitting diode element 130 and the active element 120. In the flexible micro-emitting diode display device shown in FIGS. 1A and 1B, in the unflexed state, the normal direction of the substrate surface 110a of the flexible substrate 110 is, for example, the z direction, and the trench The extending direction 141y of 141 may be the corresponding y direction, but the present invention is not limited thereto. With at least one trench 141 on the encapsulation layer 140, the flexible micro-luminescent diode display device 100 can be flexed or bent in a corresponding direction.

在本實施例中,於可撓性基板110的基板平面110a的法線方向(即,垂直投影方向Z)上,溝渠141具有溝渠深度h,並且溝渠141具有一角度θ(如圖1B所示),角度θ較佳為0度<θ<60度,但不限於此。此外,溝渠140於垂直投影方向Z上的溝渠深度h小於封裝層140於垂直投影方向上的封裝厚度140h,溝渠深度h與封裝厚度140h的比值較佳為大於0且小於0.9(即,0 < h/140h < 0.9),但不限於此。舉例而言,當封裝厚度140h為約300微米,元件厚度L1約為4微米時,溝渠深度h約為296微米。因此溝渠深度h的深度範圍例如是大於約0微米且小於約296微米,但本發明不限於此,唯溝渠深度h小於封裝層140的封裝厚度140h,以降低封裝層140剝離或微發光二極體元件130受損的可能。In this embodiment, in the normal direction (ie, the vertical projection direction Z) of the substrate plane 110a of the flexible substrate 110, the trench 141 has a trench depth h, and the trench 141 has an angle θ (as shown in FIG. 1B ), the angle θ is preferably 0°<θ<60°, but it is not limited thereto. In addition, the trench depth h in the vertical projection direction Z of the trench 140 is less than the package thickness 140h of the package layer 140 in the vertical projection direction, and the ratio of the trench depth h to the package thickness 140h is preferably greater than 0 and less than 0.9 (ie, 0 < h/140h <0.9), but not limited to this. For example, when the package thickness 140h is about 300 microns and the device thickness L1 is about 4 microns, the trench depth h is about 296 microns. Therefore, the depth range of the trench depth h is, for example, greater than about 0 μm and less than about 296 μm, but the present invention is not limited thereto, but the trench depth h is less than the package thickness 140h of the package layer 140 to reduce the peeling of the package layer 140 or the micro light emitting diode The body element 130 may be damaged.

在本實施例中,這些溝渠141的溝渠深度h可以彼此實質上相同,但本發明不限於此。在其他實施例中,這些溝渠141的溝渠深度h可以彼此不相同。In this embodiment, the trench depth h of these trenches 141 may be substantially the same as each other, but the present invention is not limited thereto. In other embodiments, the trench depth h of these trenches 141 may be different from each other.

在本實施例中,於垂直於延伸方向141y的一方向(如:圖1C中的x方向)上,溝渠141於封裝層140的表面140a上具有最大溝渠寬度t,於垂直於延伸方向141y的一方向(如:圖1C中的x方向)上,主動元件120具有元件寬度L2。微發光二極體元件130與最近於其的溝渠141之間具有最短距離d1,最短距離d1大於元件寬度L2且最大溝渠寬度t較佳小於微發光二極體元件130的元件寬度L2,但本發明不限於此。當最大溝渠寬度t小於微發光二極體元件130的元件寬度L2時,微發光二極體顯示裝置100的應力分散效果較佳。In this embodiment, in a direction perpendicular to the extension direction 141y (eg, the x direction in FIG. 1C), the trench 141 has the largest trench width t on the surface 140a of the encapsulation layer 140, and is perpendicular to the extension direction 141y In one direction (such as the x direction in FIG. 1C), the active device 120 has a device width L2. There is a shortest distance d1 between the micro-emitting diode element 130 and the trench 141 nearest to it, the shortest distance d1 is greater than the device width L2 and the maximum trench width t is preferably smaller than the device width L2 of the micro-emitting diode element 130, but this The invention is not limited to this. When the maximum trench width t is smaller than the device width L2 of the micro light emitting diode device 130, the stress dispersing effect of the micro light emitting diode display device 100 is better.

在本實施例中,這些溝渠141的最大溝渠寬度t可以彼此實質上相同,但本發明不限於此。在其他實施例中,這些溝渠141的最大溝渠寬度t可以彼此不相同,且溝渠深度h大於最大溝渠寬度t。In this embodiment, the maximum trench width t of these trenches 141 may be substantially the same as each other, but the invention is not limited thereto. In other embodiments, the maximum trench width t of the trenches 141 may be different from each other, and the trench depth h is greater than the maximum trench width t.

訊號線150設置於相鄰的畫素單元102之間。在本實施例中,訊號線150例如為資料線,且訊號線150可以電性連接至主動元件120的源極S,但本發明不限於此。在其他的實施例中,訊號線例如為掃描線,且前述的訊號線150可以電性連接至主動元件120的閘極GE。在其他可行的實施例中,訊號線150也可以具有其他不同的用途。舉例而言,訊號線150可以為可撓曲微發光二極體顯示裝置100上其他電子元件的導線,例如電力線、參考電壓線(OVDD或OVSS)。除此之外,藉由將訊號線150配置於第一溝渠141a與第二溝渠141b之間,可以更有效的分散應力,以有效地降低可撓曲微發光二極體顯示裝置100的訊號線150斷裂或剝離的可能。The signal line 150 is disposed between adjacent pixel units 102. In this embodiment, the signal line 150 is, for example, a data line, and the signal line 150 may be electrically connected to the source S of the active device 120, but the present invention is not limited thereto. In other embodiments, the signal line is, for example, a scanning line, and the aforementioned signal line 150 may be electrically connected to the gate GE of the active device 120. In other feasible embodiments, the signal line 150 can also have other different uses. For example, the signal line 150 may be a wire of other electronic components on the flexible micro-luminescent diode display device 100, such as a power line and a reference voltage line (OVDD or OVSS). In addition, by arranging the signal line 150 between the first trench 141a and the second trench 141b, the stress can be more effectively dispersed to effectively reduce the signal line of the flexible microluminescent diode display device 100 150 The possibility of breaking or peeling.

在實質上平行於可撓性基板110的基板表面110a的一虛擬面(如:圖1A的紙面)中,垂直於延伸方向141y(即圖1C中的X方向)上的相鄰畫素單元102之間可以具有多個溝渠141。換句話說,位於兩相鄰畫素單元102之兩個微發光二極體元件130之間具有至少兩個溝渠141(即,至少包括第一溝渠141a與第二溝渠141b)。在一些實施例中,第一溝渠141a與第二溝渠141b設置於兩相鄰的畫素單元102之間,且訊號線150位於第一溝渠141a與第二溝渠141b之間。在其他實施例中,溝渠141的數量可以超過兩個。In a virtual surface (such as the paper surface in FIG. 1A) substantially parallel to the substrate surface 110a of the flexible substrate 110, the adjacent pixel unit 102 perpendicular to the extending direction 141y (ie, the X direction in FIG. 1C) There may be multiple trenches 141 in between. In other words, there are at least two trenches 141 (ie, at least the first trench 141a and the second trench 141b) between the two micro light emitting diode elements 130 located between two adjacent pixel units 102. In some embodiments, the first trench 141a and the second trench 141b are disposed between two adjacent pixel units 102, and the signal line 150 is located between the first trench 141a and the second trench 141b. In other embodiments, the number of trenches 141 may exceed two.

舉例而言,如圖1C所示,在垂直於延伸方向141y(即圖1C中的X方向)上,可撓曲微發光二極體顯示裝置100的一端受到垂直於可撓性基板110的方向(如:圖1C中的z方向)的外力F時,可以使可撓性基板110於可撓曲方向110b上(如:圖1C中的逆時針方向)對應地被撓曲或彎曲,且使位於可撓性基板110上的封裝層140也可以具有對應的撓曲或彎曲。一般而言,在施力於構件上時,在構件的幾何形狀的不連續處(discontinuity)的應力會有局部增大的現象,這種現象稱為應力集中(stress concentration)。而在應力集中處可能較容易使構件的結構造成破壞。因此,藉由封裝層140上的至少一溝渠141,可以在撓曲或彎曲下產生多個應力集中處,因此可以避免應力集中於單一個應力集中處(即,類似於僅具有一個溝渠的結構),且可以降低各個應力集中處的應力,而降低因應力集中而導致微發光二極體元件130或主動元件120損壞的可能。For example, as shown in FIG. 1C, in a direction perpendicular to the extension direction 141y (ie, the X direction in FIG. 1C), one end of the flexible micro-luminescent diode display device 100 is subjected to a direction perpendicular to the flexible substrate 110 (For example: the z direction in FIG. 1C) When the external force F, the flexible substrate 110 can be flexed or bent in the flexible direction 110b (for example: counterclockwise in FIG. 1C), and the The encapsulation layer 140 on the flexible substrate 110 may also have corresponding deflection or bending. Generally speaking, when a force is applied to a component, the stress at the discontinuity of the component's geometry will increase locally. This phenomenon is called stress concentration. It may be easier to damage the structure of the component at the stress concentration. Therefore, with at least one trench 141 on the encapsulation layer 140, multiple stress concentrations can be generated under deflection or bending, thus avoiding stress concentration at a single stress concentration (ie, similar to a structure having only one trench ), and can reduce the stress at each stress concentration, and reduce the possibility of damage to the micro-light emitting diode element 130 or the active element 120 due to the stress concentration.

在本實施例中,溝渠141於可撓性基板110的基板平面110a的法線方向(例如:Z方向)上的寬度變化是由封裝層140的表面140a朝可撓性基板110的方向上遞減,與此,溝渠141的溝渠寬度t為垂直於延伸方向141y上的最大寬度。舉例而言,溝渠141的剖面形狀例如是V字形、U字形、或其它合適的剖面形狀,但本發明不以此為限。In this embodiment, the width of the trench 141 in the normal direction (for example, Z direction) of the substrate plane 110a of the flexible substrate 110 decreases from the surface 140a of the encapsulation layer 140 toward the flexible substrate 110 With this, the trench width t of the trench 141 is the maximum width in the direction perpendicular to the extending direction 141y. For example, the cross-sectional shape of the trench 141 is, for example, V-shaped, U-shaped, or other suitable cross-sectional shapes, but the invention is not limited thereto.

圖2A是依照本發明的第二實施例的一種可撓曲微發光二極體顯示裝置的局部上視示意圖。圖2B是沿圖2A中B-B’剖線的剖面圖。在此必須說明的是,圖2A及圖2B的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 2A is a schematic partial top view of a flexible micro-light emitting diode display device according to a second embodiment of the invention. Fig. 2B is a sectional view taken along the line B-B' of Fig. 2A. It must be noted here that the embodiments of FIGS. 2A and 2B continue to use the element numbers and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same is omitted For the description of the technical content, for the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

請同時參照圖2A及圖2B,第二實施例的可撓曲微發光二極體顯示裝置200與第一實施例的可撓曲微發光二極體顯示裝置100差別在於:在垂直於延伸方向141y的一方向(如:圖1C中的x方向)上,可撓曲微發光二極體顯示裝置200在相鄰的兩個微發光二極體元件130之間包括第一溝渠141a、第二溝渠141b以及第三溝渠241c,第三溝渠241c位於第一溝渠141a與第二溝渠141b之間,且訊號線150與第三溝渠241c重疊。在本實施例中,第一溝渠141a於垂直投影方向Z上分別具有第一深度h1,第二溝渠141b具有第二深度h2,第三溝渠241c具有第三深度h3,第一溝渠141a、第二溝渠141b以及第三溝渠241c位於兩相鄰的畫素單元102之間且第三溝渠241c位於第一溝渠141a與第二溝渠141b之間,且第三深度h3大於第一深度h1及第二深度h2。Please refer to FIGS. 2A and 2B at the same time. The difference between the flexible micro-luminescent diode display device 200 of the second embodiment and the flexible micro-luminescent diode display device 100 of the first embodiment is that it is perpendicular to the extending direction In one direction of 141y (such as the x direction in FIG. 1C), the flexible micro-luminescent diode display device 200 includes a first trench 141a and a second channel between two adjacent micro-luminescent diode elements 130 The trench 141b and the third trench 241c. The third trench 241c is located between the first trench 141a and the second trench 141b, and the signal line 150 overlaps the third trench 241c. In this embodiment, the first trench 141a has a first depth h1 in the vertical projection direction Z, the second trench 141b has a second depth h2, the third trench 241c has a third depth h3, the first trench 141a, the second The trench 141b and the third trench 241c are located between two adjacent pixel units 102 and the third trench 241c is located between the first trench 141a and the second trench 141b, and the third depth h3 is greater than the first depth h1 and the second depth h2.

在本實施例中,第一深度h1與第二深度h2可以實質上相等,而可使應力分佈較為平均,但本發明不以此為限。在一些實施例中,第一深度h1與第二深度h2可以不相等。舉例而言,第一深度h1可以大於第二深度h2,或是,第二深度h2可以大於第一深度h1。在具有最大深度(即,第三深度h3)的第三溝渠241c與對應的微發光二極體元件130之間,第一溝渠141a與第二溝渠141b分別具有較第三深度h3小的深度(例如:第一深度h1與第二深度h2)。因此,可以使具有最大應的應力集中處可以遠離相對應的微發光二極體元件130或相對應的主動元件120,而可以降低因應力集中而導致可撓曲微發光二極體顯示裝置200損壞的可能。In this embodiment, the first depth h1 and the second depth h2 may be substantially equal, and the stress distribution may be more even, but the invention is not limited to this. In some embodiments, the first depth h1 and the second depth h2 may not be equal. For example, the first depth h1 may be greater than the second depth h2, or the second depth h2 may be greater than the first depth h1. Between the third trench 241c having the maximum depth (ie, the third depth h3) and the corresponding micro light emitting diode element 130, the first trench 141a and the second trench 141b have a depth smaller than the third depth h3 ( For example: first depth h1 and second depth h2). Therefore, the stress concentration with the maximum stress can be kept away from the corresponding microluminescent diode element 130 or the corresponding active element 120, and the flexible microluminescent diode display device 200 due to stress concentration can be reduced The possibility of damage.

在一些實施例中,第一溝渠141a的最大溝渠寬度t1、第二溝渠141b的最大溝渠寬度t2與第三溝渠241c的最大溝渠寬度t3可以彼此實質上相同,或是,第一溝渠141a的最大溝渠寬度t1、第二溝渠141b的最大溝渠寬度t2與第三溝渠241c的最大溝渠寬度t3可以兩兩不同或彼此不同,於本發明不以此為限,惟各個溝渠141a、141b、241c的溝渠深度h1、h2、h3大於對應的最大溝渠寬度t1、t2、t3。In some embodiments, the maximum trench width t1 of the first trench 141a, the maximum trench width t2 of the second trench 141b, and the maximum trench width t3 of the third trench 241c may be substantially the same as each other, or the maximum of the first trench 141a The ditch width t1, the maximum ditch width t2 of the second ditch 141b and the maximum ditch width t3 of the third ditch 241c may be different from each other or different from each other, but the invention is not limited to this, but each ditch 141a, 141b, 241c The depths h1, h2, h3 are greater than the corresponding maximum trench widths t1, t2, t3.

在一些實施例中,在溝渠141的延伸方向141y上,在相鄰的兩個微發光二極體元件130之間的多個溝渠141的可以具有不同的溝渠長度。舉例而言,如圖2A所示,在延伸方向141y上,第三溝渠241c可以為連續的(即,在延伸方向141y上貫穿圖2A所繪示的可撓性基板110範圍)溝渠,且第一溝渠141a與第二溝渠141b可以為不連續的溝渠。換句話說,第三溝渠241c的溝渠長度(未標示,但在延伸方向141y上大於圖2A所繪示的可撓性基板110範圍)大於第一溝渠141a的溝渠長度L3與第二溝渠141b的溝渠長度L4。In some embodiments, in the extending direction 141y of the trench 141, a plurality of trenches 141 between two adjacent micro-emitting diode elements 130 may have different trench lengths. For example, as shown in FIG. 2A, in the extending direction 141y, the third trench 241c may be continuous (ie, extending in the extending direction 141y through the flexible substrate 110 depicted in FIG. 2A), and the first One trench 141a and the second trench 141b may be discontinuous trenches. In other words, the trench length of the third trench 241c (not shown, but greater than the range of the flexible substrate 110 shown in FIG. 2A in the extending direction 141y) is greater than the trench length L3 of the first trench 141a and the second trench 141b Ditch length L4.

圖3是依照本發明的第三實施例的一種可撓曲微發光二極體顯示裝置的局部剖面示意圖。在此必須說明的是,圖3的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。為求清楚表示,圖3所繪示的可撓曲微發光二極體顯示裝置300的局部剖面可以是對應於圖1B中的區域R1。3 is a schematic partial cross-sectional view of a flexible micro-luminescent diode display device according to a third embodiment of the present invention. It must be noted here that the embodiment of FIG. 3 follows the element numbers and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same technical content is omitted. For the description, the description of the omitted parts may refer to the foregoing embodiments, and the following embodiments will not be repeated. For clarity, the partial cross-section of the flexible microluminescent diode display device 300 depicted in FIG. 3 may correspond to the region R1 in FIG. 1B.

請參照圖3,第三實施例的可撓曲微發光二極體顯示裝置300與第一實施例的差別在於,於可撓性基板110(繪示於圖1B)的基板平面110a(繪示於圖1B)的法線方向上,多個溝渠341的寬度變化是由封裝層140的表面140a朝可撓性基板110的方向上遞增。舉例而言,溝渠341的剖面形狀例如是梯形,但本發明不以此為限。Referring to FIG. 3, the difference between the flexible microluminescent diode display device 300 of the third embodiment and the first embodiment lies in the substrate plane 110a (shown in FIG. 1B) of the flexible substrate 110 (shown in FIG. 1B) In the normal direction of FIG. 1B ), the width changes of the plurality of trenches 341 increase from the surface 140 a of the encapsulation layer 140 toward the flexible substrate 110. For example, the cross-sectional shape of the trench 341 is, for example, a trapezoid, but the invention is not limited thereto.

圖4是依照本發明的第四實施例的一種可撓曲微發光二極體顯示裝置的局部剖面示意圖。在此必須說明的是,圖4的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 4 is a schematic partial cross-sectional view of a flexible micro light-emitting diode display device according to a fourth embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 continues to use the element labels and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same technical content is omitted. For the description, the description of the omitted parts may refer to the foregoing embodiments, and the following embodiments will not be repeated.

請參照圖4,第四實施例的可撓曲微發光二極體顯示裝置400與第一實施例的可撓曲微發光二極體顯示裝置100差別在於:可撓曲微發光二極體顯示裝置400更包括彈性層400。彈性層400位於封裝層140上且填充於多個溝渠141內,且彈性層400的楊氏模量小於封裝層140的楊氏模量,彈性層例如是固體橡膠、發泡橡膠、軟質橡膠、光阻材料或其組合或其他適宜的可透光材料。藉由彈性層400的配置可以進一步的吸收應力,提升產品的可靠度。Please refer to FIG. 4, the difference between the flexible micro-light emitting diode display device 400 of the fourth embodiment and the flexible micro-light emitting diode display device 100 of the first embodiment is that the flexible micro-light emitting diode display The device 400 further includes an elastic layer 400. The elastic layer 400 is located on the encapsulation layer 140 and filled in the plurality of trenches 141, and the Young's modulus of the elastic layer 400 is smaller than that of the encapsulation layer 140. The elastic layer is, for example, solid rubber, foam rubber, soft rubber, Photoresist materials or combinations thereof or other suitable light transmissive materials. The configuration of the elastic layer 400 can further absorb stress and improve the reliability of the product.

圖5A是依照本發明的第五實施例的一種可撓曲微發光二極體顯示裝置的的局部上視示意圖。圖5B是沿圖5A中C-C’剖線的剖面圖。在此必須說明的是,圖5A至圖5B的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 5A is a partial schematic top view of a flexible micro-light emitting diode display device according to a fifth embodiment of the present invention. Fig. 5B is a sectional view taken along line C-C' in Fig. 5A. It must be noted here that the embodiments of FIGS. 5A to 5B continue to use the element numbers and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same is omitted. For the description of the technical content, for the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

請參照圖5A及圖5B,第五實施例的可撓曲微發光二極體顯示裝置500與第一實施例的可撓曲微發光二極體顯示裝置100差別在於:可撓曲微發光二極體顯示裝置500包括第一訊號線150a與第二訊號線150b。第一訊號線150a與第一溝渠141a至少部份重疊,且第一訊號線150a與對應的主動元件120電性連接。第二訊號線150b與第二溝渠141b至少部份重疊。在本實施例中,第一訊號線150a例如為電性連接至主動元件120的一資料線,且第二訊號線150b可以為電性連接至另一主動元件(未繪示)的另一資料線,但本發明不限於此。在其他實施例中,第二訊號線150b可以為掃描線,且第二訊號線150b可以電性連接至主動元件120的閘極GE。在其他可行的實施例中,第二訊號線150b可以為可撓曲微發光二極體顯示裝置500上其他電子元件的導線。5A and 5B, the difference between the flexible micro-luminescent diode display device 500 of the fifth embodiment and the flexible micro-luminescent diode display device 100 of the first embodiment is that the flexible micro-light emitting diode 100 The polar body display device 500 includes a first signal line 150a and a second signal line 150b. The first signal line 150a at least partially overlaps the first trench 141a, and the first signal line 150a is electrically connected to the corresponding active device 120. The second signal line 150b and the second trench 141b at least partially overlap. In this embodiment, the first signal line 150a is, for example, a data line electrically connected to the active element 120, and the second signal line 150b may be another data electrically connected to another active element (not shown) Line, but the invention is not limited to this. In other embodiments, the second signal line 150b may be a scanning line, and the second signal line 150b may be electrically connected to the gate GE of the active device 120. In other feasible embodiments, the second signal line 150b may be a wire of other electronic components on the flexible micro-light emitting diode display device 500.

圖6A是依照本發明的第六實施例的一種可撓曲微發光二極體顯示裝置的的局部上視示意圖。圖6B是沿圖6A中D-D’剖線的剖面圖。在此必須說明的是,圖6A至圖6B的實施例沿用圖5A至圖5B的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明,關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 6A is a partial schematic top view of a flexible micro-luminescent diode display device according to a sixth embodiment of the invention. Fig. 6B is a sectional view taken along the line D-D' in Fig. 6A. It must be noted here that the embodiments of FIGS. 6A to 6B continue to use the element numbers and parts of the embodiments of FIGS. 5A to 5B, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same is omitted. For the description of the technical content, for the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

請參照圖6A及圖6B,第六實施例的可撓曲微發光二極體顯示裝置600與可撓曲微發光二極體顯示裝置500差別在於:可撓曲微發光二極體顯示裝置600更包括第三溝渠641c,且第三溝渠641c位於第一溝渠141a與第二溝渠141b之間。在其他可行的實施例中,藉由第一訊號線150a與第一溝渠141a至少部份重疊,第二訊號線150b與第二溝渠141b至少部份重疊,可以更有效的分散應力,以有效地降低可撓曲微發光二極體顯示裝置600的第一訊號線150a及/或第二訊號線150b斷裂或剝離的可能。6A and 6B, the difference between the flexible micro-luminescent diode display device 600 of the sixth embodiment and the flexible micro-luminescent diode display device 500 is that the flexible micro-luminescent diode display device 600 The third trench 641c is further included, and the third trench 641c is located between the first trench 141a and the second trench 141b. In other feasible embodiments, by the first signal line 150a and the first trench 141a at least partially overlapping, and the second signal line 150b and the second trench 141b at least partially overlapping, the stress can be more effectively dispersed to effectively The possibility that the first signal line 150a and/or the second signal line 150b of the flexible micro-luminescent diode display device 600 is broken or peeled is reduced.

本發明揭露之可撓曲微發光二極體顯示裝置,藉由在相鄰兩個微發光二極體元件之間具有至少一溝渠的配置,具有較佳可撓性。此外,藉由溝渠深度小於封裝層的封裝厚度,以降低封裝層剝離或微發光二極體元件受損的可能,提升可撓曲微發光二極體顯示裝置可靠度。The flexible micro light-emitting diode display device disclosed by the present invention has better flexibility by having at least one trench between two adjacent micro-light emitting diode elements. In addition, the depth of the trench is smaller than the packaging thickness of the packaging layer, so as to reduce the possibility of peeling of the packaging layer or damage of the micro-light emitting diode device, and improve the reliability of the flexible micro-light emitting diode display device.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100、200、300、400、500、600‧‧‧可撓曲微發光二極體顯示裝置102‧‧‧畫素單元110‧‧‧可撓性基板110a‧‧‧可撓性基板表面120‧‧‧主動元件130‧‧‧微發光二極體元件140‧‧‧封裝層140a‧‧‧第一表面140b‧‧‧第二表面140h‧‧‧封裝厚度141‧‧‧溝渠141y‧‧‧延伸方向141a‧‧‧第一溝渠141b‧‧‧第二溝渠241c、641c‧‧‧第三溝渠150‧‧‧訊號線150a‧‧‧第一訊號線150b‧‧‧第二訊號線400‧‧‧彈性層GE‧‧‧閘極S‧‧‧源極D‧‧‧汲極CH‧‧‧半導體層GI‧‧‧閘極絕緣層X‧‧‧連接線F‧‧‧外力PV1‧‧‧平坦層d1‧‧‧最短距離L1‧‧‧元件厚度L2‧‧‧元件寬度L3、L4‧‧‧溝渠長度t、t1、t2、t3‧‧‧最大溝渠寬度h‧‧‧溝渠深度h1‧‧‧第一深度h2‧‧‧第二深度h3‧‧‧第三深度R1‧‧‧放大部分x、y、z‧‧‧方向θ‧‧‧角度100, 200, 300, 400, 500, 600 ‧‧‧Flexible micro-luminescent diode display device 102 ‧‧‧ pixel unit 110 ‧‧‧ flexible substrate 110a‧‧‧ flexible substrate surface 120‧ ‧‧Active component 130‧‧‧Microluminescent diode component 140‧‧‧Package layer 140a‧‧‧‧First surface 140b‧‧‧Second surface 140h‧‧‧Package thickness 141‧‧‧Ditch 141y‧‧‧Extended Direction 141a‧‧‧The first channel 141b‧‧‧The second channel 241c, 641c‧‧‧The third channel 150‧‧‧ Signal line 150a‧‧‧The first signal line 150b‧‧‧The second signal line 400‧‧‧ Elastic layer GE‧‧‧Gate S‧‧‧Source D‧‧‧Drain CH‧‧‧Semiconductor layer GI‧‧‧Gate insulating layer X‧‧‧Connecting wire F‧‧‧External force PV1‧‧‧Flat Layer d1‧‧‧The shortest distance L1‧‧‧Element thickness L2‧‧‧Element width L3, L4‧‧‧Ditch length t, t1, t2, t3‧‧‧Max trench width h‧‧‧Ditch depth h1‧‧‧ First depth h2‧‧‧ Second depth h3‧‧‧ Third depth R1‧‧‧ Magnified part x, y, z‧‧‧ Direction θ‧‧‧ Angle

圖1A是依照本發明的第一實施例的一種可撓曲微發光二極體顯示裝置的的局部上視示意圖。 圖1B是沿圖1A中A-A’剖線的剖面圖。 圖1C是圖1B中R1區域的彎折示意圖。 圖2A是依照本發明的第二實施例的一種可撓曲微發光二極體顯示裝置的局部上視示意圖。 圖2B是沿圖2A中B-B’剖線的剖面圖。 圖3是依照本發明的第三實施例的一種可撓曲微發光二極體顯示裝置的局部剖面示意圖。 圖4是依照本發明的第四實施例的一種可撓曲微發光二極體顯示裝置的局部剖面示意圖。 圖5A是依照本發明的第五實施例的一種可撓曲微發光二極體顯示裝置的的局部上視示意圖。 圖5B是沿圖5A中C-C’剖線的剖面圖。 圖6A是依照本發明的第六實施例的一種可撓曲微發光二極體顯示裝置的的局部上視示意圖。 圖6B是沿圖6A中D-D’剖線的剖面圖。FIG. 1A is a partial schematic top view of a flexible micro-light emitting diode display device according to a first embodiment of the present invention. Fig. 1B is a cross-sectional view taken along line A-A' in Fig. 1A. FIG. 1C is a schematic diagram of the bending of the R1 region in FIG. 1B. FIG. 2A is a schematic partial top view of a flexible micro-light emitting diode display device according to a second embodiment of the invention. Fig. 2B is a sectional view taken along the line B-B' of Fig. 2A. 3 is a schematic partial cross-sectional view of a flexible micro-luminescent diode display device according to a third embodiment of the present invention. FIG. 4 is a schematic partial cross-sectional view of a flexible micro light-emitting diode display device according to a fourth embodiment of the present invention. FIG. 5A is a partial schematic top view of a flexible micro-light emitting diode display device according to a fifth embodiment of the present invention. Fig. 5B is a sectional view taken along line C-C' in Fig. 5A. FIG. 6A is a partial schematic top view of a flexible micro-luminescent diode display device according to a sixth embodiment of the invention. Fig. 6B is a sectional view taken along the line D-D' in Fig. 6A.

100‧‧‧可撓曲微發光二極體顯示裝置 100‧‧‧Flexible micro-luminous diode display device

110‧‧‧可撓性基板 110‧‧‧Flexible substrate

110a‧‧‧可撓性基板表面 110a‧‧‧Flexible substrate surface

120‧‧‧主動元件 120‧‧‧Active components

130‧‧‧微發光二極體元件 130‧‧‧Microluminescent diode components

140‧‧‧封裝層 140‧‧‧encapsulation layer

140a‧‧‧第一表面 140a‧‧‧First surface

140b‧‧‧第二表面 140b‧‧‧Second surface

140h‧‧‧封裝厚度 140h‧‧‧Package thickness

141‧‧‧溝渠 141‧‧‧Ditch

141a‧‧‧第一溝渠 141a‧‧‧The first ditch

141b‧‧‧第二溝渠 141b‧‧‧Second Ditch

150‧‧‧訊號線 150‧‧‧Signal line

GE‧‧‧閘極 GE‧‧‧Gate

S‧‧‧源極 S‧‧‧Source

D‧‧‧汲極 D‧‧‧ Jiji

CH‧‧‧半導體層 CH‧‧‧semiconductor layer

GI‧‧‧閘極絕緣層 GI‧‧‧Gate insulation

X‧‧‧連接線 X‧‧‧ connection cable

PV1‧‧‧平坦層 PV1‧‧‧flat layer

d1‧‧‧最短距離 d1‧‧‧The shortest distance

L1‧‧‧元件厚度 L1‧‧‧component thickness

L2‧‧‧元件寬度 L2‧‧‧Element width

t‧‧‧最大溝渠寬度 t‧‧‧Max trench width

h‧‧‧溝渠深度 h‧‧‧Ditch depth

R1‧‧‧放大部分 R1‧‧‧Enlarged part

x、y、z‧‧‧方向 x, y, z‧‧‧ direction

θ‧‧‧角度 θ‧‧‧angle

Claims (15)

一種可撓曲微發光二極體顯示裝置,包括: 多個畫素單元,設置於一可撓性基板上; 多個主動元件,設置於該可撓性基板上; 多個微發光二極體元件,位於該可撓性基板上,且該些微發光二極體元件分別與對應的該些主動元件電性連接,且各該畫素單元包括至少一該些主動元件以及至少一該些微發光二極體元件; 一封裝層,覆蓋該些微發光二極體元件,該封裝層具有一第一表面,其中該第一表面遠離該可撓性基板;以及 至少一溝渠,具有一延伸方向,該至少一溝渠設置於該封裝層的該第一表面,該至少一溝渠於一垂直投影方向上具有一溝渠深度,該溝渠深度小於該封裝層於該垂直投影方向上的一厚度,該至少一溝渠設置於在兩相鄰的該些畫素單元之間,於該垂直投影方向上該至少一溝渠與該些微發光二極體元件及該些主動元件不重疊。A flexible micro-luminous diode display device, comprising: a plurality of pixel units, arranged on a flexible substrate; a plurality of active elements, arranged on the flexible substrate; a plurality of micro-luminous diodes The device is located on the flexible substrate, and the micro light-emitting diode elements are electrically connected to the corresponding active elements, and each pixel unit includes at least one of the active elements and at least one of the micro-light emitting diodes. A encapsulating layer covering the micro-light emitting diode elements, the encapsulating layer has a first surface, wherein the first surface is away from the flexible substrate; and at least one trench has an extending direction, the at least A trench is provided on the first surface of the packaging layer, the at least one trench has a trench depth in a vertical projection direction, the trench depth is less than a thickness of the packaging layer in the vertical projection direction, and the at least one trench is provided Between the two adjacent pixel units, the at least one trench does not overlap with the micro light emitting diode elements and the active elements in the vertical projection direction. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,包括至少一訊號線,設置在兩相鄰的該些畫素單元之間。The flexible microluminescent diode display device as described in item 1 of the patent application scope includes at least one signal line disposed between two adjacent pixel units. 如申請專利範圍第2項所述的可撓曲微發光二極體顯示裝置,其中該至少一溝渠為多個溝渠,且該些溝渠包括一第一溝渠以及一第二溝渠,其中該第一溝渠以及該第二溝渠,設置在兩相鄰的該些畫素單元之間,且該至少一訊號線位於該第一溝渠與該第二溝渠之間。The flexible micro-emitting diode display device as described in item 2 of the patent application scope, wherein the at least one trench is a plurality of trenches, and the trenches include a first trench and a second trench, wherein the first The trench and the second trench are disposed between the two adjacent pixel units, and the at least one signal line is located between the first trench and the second trench. 如申請專利範圍第3項所述的可撓曲微發光二極體顯示裝置,其中該些溝渠更包括一第三溝渠,位於該第一溝渠與該第二溝渠之間,且該至少一訊號線與該第三溝渠重疊。The flexible micro-emitting diode display device as described in item 3 of the patent application scope, wherein the trenches further include a third trench between the first trench and the second trench, and the at least one signal The line overlaps the third ditch. 如申請專利範圍第3項所述的可撓曲微發光二極體顯示裝置,其中該至少一訊號線為多條訊號線,且該些訊號線更包括一第一訊號線與一第二訊號線,該第一訊號線與該第一溝渠至少部份重疊,且該第二訊號線與該第二溝渠至少部份重疊。The flexible micro light-emitting diode display device as described in item 3 of the patent application scope, wherein the at least one signal line is a plurality of signal lines, and the signal lines further include a first signal line and a second signal Line, the first signal line and the first trench at least partially overlap, and the second signal line and the second trench at least partially overlap. 如申請專利範圍第5項所述的可撓曲發光二極體顯示裝置,其中該些溝渠更包括一第三溝渠,位於該第一溝渠與該第二溝渠之間。The flexible light-emitting diode display device as described in item 5 of the patent application scope, wherein the trenches further include a third trench located between the first trench and the second trench. 如申請專利範圍第4項或第6項所述的可撓曲微發光二極體顯示裝置,其中該第一溝渠、該第二溝渠與該第三溝渠於該垂直投影方向上分別具有一第一深度、一第二深度以及一第三深度,該第一溝渠、該第二溝渠與該第三溝渠位於兩相鄰的該些畫素單元之間且該第三溝渠位於該第一溝渠與該第二溝渠之間,該第三深度大於該第一深度及該第二深度。The flexible micro-emitting diode display device as described in item 4 or item 6 of the patent application scope, wherein the first trench, the second trench and the third trench each have a first in the vertical projection direction A depth, a second depth, and a third depth, the first trench, the second trench, and the third trench are between two adjacent pixel units, and the third trench is between the first trench and Between the second trenches, the third depth is greater than the first depth and the second depth. 如申請專利範圍第7項所述的可撓曲微發光二極體顯示裝置,其中該第一深度與該第二深度相等。The flexible micro-emitting diode display device as described in item 7 of the patent application scope, wherein the first depth is equal to the second depth. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中各該溝渠於垂直該延伸方向上具有一最大溝渠寬度,各該微發光二極體元件於垂直該延伸方向上具有一元件寬度,該些微發光二極體元件與該些溝渠之間具有一最短距離,該最短距離大於該元件寬度,且該元件寬度大於該最大溝渠寬度。The flexible micro-emitting diode display device as described in item 1 of the patent application range, wherein each of the trenches has a maximum trench width perpendicular to the extending direction, and each of the micro-emitting diode elements is perpendicular to the extending direction There is an element width on the top, and there is a shortest distance between the micro light-emitting diode elements and the trenches, the shortest distance is greater than the element width, and the element width is greater than the maximum trench width. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中該至少一溝渠於垂直該延伸方向上具有一最大溝渠寬度,且該溝渠深度大於該最大溝渠寬度。The flexible micro-emitting diode display device as described in item 1 of the patent application range, wherein the at least one trench has a maximum trench width perpendicular to the extending direction, and the trench depth is greater than the maximum trench width. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中該封裝層的該厚度大於30微米且小於等於300微米,且該些微發光二極體元件於該垂直投影方向上具有一元件厚度,該元件厚度大於4微米且小於等於30微米。The flexible micro light-emitting diode display device as described in item 1 of the patent application range, wherein the thickness of the encapsulation layer is greater than 30 microns and less than or equal to 300 microns, and the micro-light emitting diode elements are in the vertical projection direction It has an element thickness that is greater than 4 microns and less than or equal to 30 microns. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中該可撓曲微發光二極體顯示裝置具有一可撓曲方向,且該可撓曲方向垂直於該至少一溝渠之該延伸方向。The flexible microluminescent diode display device as described in item 1 of the patent application range, wherein the flexible microluminescent diode display device has a flexible direction, and the flexible direction is perpendicular to the at least The extension direction of a ditch. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中該至少一溝渠為多個溝渠,且在該些溝渠中的至少兩個於該延伸方向上的長度不同。The flexible micro-emitting diode display device as described in item 1 of the patent application range, wherein the at least one trench is a plurality of trenches, and at least two of the trenches have different lengths in the extending direction. 如申請專利範圍第1項所述的可撓曲微發光二極體顯示裝置,其中該封裝層的楊氏模量小於該可撓性基板的楊氏模量。The flexible microluminescent diode display device as described in item 1 of the patent application range, wherein the Young's modulus of the encapsulation layer is smaller than the Young's modulus of the flexible substrate. 如申請專利範圍第13項所述的可撓曲微發光二極體顯示裝置,更包括: 一彈性層,設置於該封裝層上且填充於該些溝渠內,且該彈性層的楊氏模量小於該封裝層的楊氏模量。The flexible micro-emitting diode display device as described in item 13 of the patent application scope further includes: an elastic layer disposed on the encapsulation layer and filled in the trenches, and the Young's mode of the elastic layer The amount is smaller than the Young's modulus of the encapsulation layer.
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