TW202003100A - Hydrogen permeable membrane and method for producing same - Google Patents

Hydrogen permeable membrane and method for producing same Download PDF

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TW202003100A
TW202003100A TW108117448A TW108117448A TW202003100A TW 202003100 A TW202003100 A TW 202003100A TW 108117448 A TW108117448 A TW 108117448A TW 108117448 A TW108117448 A TW 108117448A TW 202003100 A TW202003100 A TW 202003100A
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alloy film
hydrogen
film
manufacturing
alloy
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TWI716879B (en
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加藤之貴
前田哲彥
遠藤成輝
八重樫聰
古川義智
出澤憲和
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國立大學法人東京工業大學
國立研究開發法人產業技術總合研究所
日商山王股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D69/00Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D71/00Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02Inorganic material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys

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Abstract

This hydrogen permeable membrane comprises an alloy film which contains Pd and Cu. This alloy film is an electrolytic plating film and has a BCC structure; and the Pd:Cu ratio (atomic ratio) in this alloy film is from 4:6 to 6:4.

Description

氫穿透膜及其製造方法 Hydrogen penetrating membrane and manufacturing method thereof

本發明係關於一種氫穿透膜及其製造方法。 The invention relates to a hydrogen penetrating membrane and a manufacturing method thereof.

為了獲得高純度之氫的材料,已提出使氫選擇性地穿透的氫穿透膜。氫穿透膜,已知包含Pd合金膜的膜。Pd合金膜,已知PdCu合金膜。 In order to obtain a material of high-purity hydrogen, a hydrogen-penetrating membrane that selectively penetrates hydrogen has been proposed. Hydrogen penetrating membranes are known to include Pd alloy membranes. The Pd alloy film is known as a PdCu alloy film.

關於氫穿透膜用的PdCu合金膜,專利文獻1(日本特開2008-81765號公報)已公開一種包含特定鈀錯合物的鈀合金鍍液、及由該鍍液所形成的氫分離膜。專利文獻1已記載:作為具體例,使用包含氯化鈀、硝酸銅、天冬醯胺酸、檸檬酸二鉀、及磷酸氫二鉀的鍍液形成合金膜。 Regarding a PdCu alloy film for a hydrogen penetrating membrane, Patent Document 1 (Japanese Unexamined Patent Publication No. 2008-81765) has disclosed a palladium alloy plating solution containing a specific palladium complex and a hydrogen separation membrane formed from the plating solution . Patent Document 1 describes that as a specific example, an alloy film is formed using a plating solution containing palladium chloride, copper nitrate, aspartic acid, dipotassium citrate, and dipotassium hydrogen phosphate.

此外,非專利文獻1(氫穿透膜用電解PdCu合金鍍皮膜之製作,表面技術協會第125回講演大會要旨集,第141頁)已記載以下觀點:電解PdCu鍍皮膜於SUS304上成膜後,將PdCu皮膜剝離之觀點;所獲得之PdCu皮膜為Pd 63wt%-Cu 37wt%之皮膜,其係與具有氫穿透性之合金比率Pd 60wt%-Cu 40wt%非常接近的值之觀點;在確認熱處理前後之PdCu皮膜的結晶性時,於熱處理前僅確認出α相,但熱處理後有β 相形成之觀點;以及鑒於PdCu合金皮膜的氫穿透性係由α相與β相的混合存在而獲得其效果,可認為所獲得之PdCu合金皮膜具有作為氫穿透膜的功能之觀點。 In addition, Non-Patent Document 1 (Fabrication of Electrolytic PdCu Alloy Coating Films for Hydrogen Permeable Membranes, Surface Technology Association's 125th Lecture Conference Highlights, page 141) has described the following point: After the electrolytic PdCu coating film is formed on SUS304 , The point of peeling off the PdCu film; the obtained PdCu film is a film of Pd 63wt%-Cu 37wt%, which is a point of view that is very close to the alloy ratio Pd 60wt%-Cu 40wt% with hydrogen permeability; When confirming the crystallinity of the PdCu film before and after the heat treatment, only the α phase was confirmed before the heat treatment, but the viewpoint of the β phase formation after the heat treatment; and in view of the hydrogen permeability of the PdCu alloy film due to the mixture of the α phase and the β phase In order to obtain the effect, it is considered that the obtained PdCu alloy film has a function as a hydrogen penetrating film.

然而,不論是專利文獻1或是非專利文獻1,皆未有關於所獲得之PdCu合金膜實際上是否發揮作為氫穿透膜的功能之記載。而且,根據本發明人之見解,即使藉由電鍍形成PdCu合金膜,並如非專利文獻1所記載進行熱處理進而形成β相(體心立方相),僅是如此作為氫穿透膜仍無法獲得充分的氫穿透性能。 However, whether it is Patent Document 1 or Non-Patent Document 1, there is no description as to whether the obtained PdCu alloy film actually functions as a hydrogen penetrating film. Moreover, according to the inventor's opinion, even if a PdCu alloy film is formed by electroplating, and a heat treatment is performed as described in Non-Patent Document 1 to form a β phase (body-centered cubic phase), it is still not available as a hydrogen penetrating film Full hydrogen penetration performance.

因此,本發明的課題在於,提供一種具有充分的氫穿透性能、且利用PdCu合金膜之氫穿透膜,以及其製造方法。 Therefore, an object of the present invention is to provide a hydrogen permeable film that has sufficient hydrogen permeation performance and utilizes a PdCu alloy film, and a method for manufacturing the same.

為解決上述課題,本發明包含以下事項。 In order to solve the above-mentioned problems, the present invention includes the following matters.

(1)一種氫穿透膜,其包含含有Pd及Cu的合金膜,其特徵係:前述合金膜為電鍍膜,且具有BCC構造;前述合金膜之Pd:Cu比率(原子比)為6:4~4:6。 (1) A hydrogen penetrating film including an alloy film containing Pd and Cu, characterized in that the alloy film is a plated film and has a BCC structure; and the Pd:Cu ratio (atomic ratio) of the alloy film is 6: 4~4:6.

(2)如前述(1)所記載之氫穿透膜,其中,前述合金膜的膜厚為1 ~100μm。 (2) The hydrogen permeable film as described in (1) above, wherein the film thickness of the alloy film is 1 to 100 μm.

(3)一種氫穿透膜的製造方法,其特徵係其具備:製作含有Pd及Cu的合金膜之步驟;使前述合金膜的晶體構造的至少一部分在非氧存在下變化為BCC構造之步驟;在前述變化為BCC構造之步驟之後,於加熱條件下,以氧處理前述合金膜之步驟;以及在前述以氧處理之步驟之後,以還原性氣體處理前述合金膜之步驟。 (3) A method for manufacturing a hydrogen penetrating membrane, characterized by comprising: a step of manufacturing an alloy film containing Pd and Cu; and a step of changing at least a part of the crystal structure of the alloy film to a BCC structure in the presence of non-oxygen After the step of changing to the BCC structure, the step of treating the alloy film with oxygen under heating conditions; and the step of treating the alloy film with reducing gas after the step of oxygen treatment.

(4)如前述(3)所記載之製造方法,其中,前述製作合金膜之步驟係包含藉由電鍍將前述合金膜成膜之步驟。 (4) The manufacturing method as described in (3) above, wherein the step of forming the alloy film includes a step of forming the alloy film by electroplating.

(5)如前述(3)或(4)所記載之製造方法,其中,前述變化為BCC構造之步驟係包含在減壓狀態下對前述合金膜進行熱處理之步驟。 (5) The manufacturing method according to the above (3) or (4), wherein the step of changing to the BCC structure includes a step of heat-treating the alloy film under reduced pressure.

(6)如前述(3)至(5)中任一項所記載之製造方法,其中,前述還原性氣體包含氫。 (6) The production method according to any one of (3) to (5) above, wherein the reducing gas contains hydrogen.

(7)如前述(3)至(6)中任一項所記載之製造方法,其中,於前述以氧處理之步驟之後,進一步具備將包含前述合金膜之環境變為減壓狀態之步驟;且前述以還原性氣體處理之步驟,係於前述變為減壓狀態之步驟之後,包含將前述還原性氣體導入包含前述合金膜之環境中之步驟。 (7) The manufacturing method as described in any one of (3) to (6) above, wherein after the step of treating with oxygen, a step of changing the environment containing the alloy film to a reduced pressure state is further provided; In addition, the step of treating with the reducing gas is a step of introducing the reducing gas into the environment including the alloy film after the step of reducing the pressure to the reduced pressure state.

(8)如前述(3)至(7)中任一項所記載之製造方法,其中,前述以還原性氣體處理之步驟係於加熱條件下實施。 (8) The production method according to any one of (3) to (7) above, wherein the step of treating with reducing gas is carried out under heating conditions.

(9)如前述(3)至(8)中任一項所記載之製造方法,其中,進一 步具備於前述以還原性氣體處理之步驟之後,將包含前述合金膜之環境減壓,使其再次變為減壓狀態之步驟;於前述再次變為減壓狀態之步驟之後,將前述合金膜冷卻之步驟;以及於前述冷卻之步驟之後,使包含前述合金膜之環境回復到大氣壓力之步驟。 (9) The production method described in any one of (3) to (8) above, further comprising after the step of treating with a reducing gas, depressurizing the environment containing the alloy film to make it again The step of becoming a reduced pressure state; the step of cooling the aforementioned alloy film after the aforementioned step of becoming the reduced pressure state again; and the step of returning the environment containing the aforementioned alloy film to atmospheric pressure after the aforementioned cooling step.

根據本發明,提供一種具備充分的氫穿透性能、且利用PdCu合金膜之氫穿透膜,以及其製造方法。 According to the present invention, there is provided a hydrogen penetrating film having sufficient hydrogen penetrating performance and using a PdCu alloy film, and a method for manufacturing the same.

【圖1】表示合金膜的SEM照片。 [Figure 1] An SEM photograph of an alloy film.

【圖2】表示合金膜的X射線繞射強度光譜。 [Figure 2] This shows the X-ray diffraction intensity spectrum of the alloy film.

【圖3】表示合金膜的壓痕試驗結果。 Fig. 3 shows the results of the indentation test of the alloy film.

1:氫穿透膜的製造方法 1: Manufacturing method of hydrogen penetrating membrane

本發明的實施型態之氫穿透膜的製造方法係具備:製作含有Pd及Cu的合金膜之步驟(步驟S1);使合金膜的晶體構造的至少一部分於氧不存在下變化為BCC(body-centered cubic;體心立方晶格)構造之步驟(步驟 S2);在變化為BCC構造之步驟之後,於加熱條件下以氧處理合金膜之步驟(步驟S3);以及在以氧處理之步驟之後,以還原性氣體處理前述合金膜之步驟(步驟S4)。 The manufacturing method of the hydrogen permeable membrane of the embodiment of the present invention includes: a step of manufacturing an alloy film containing Pd and Cu (step S1); and changing at least a part of the crystal structure of the alloy film to BCC in the absence of oxygen ( body-centered cubic (body-centered cubic lattice) structure step (step S2); after the step of changing to BCC structure, the step of treating the alloy film with oxygen under heating conditions (step S3); and the step of treating with oxygen After the step, the aforementioned alloy film is treated with a reducing gas (step S4).

一般認為為了提升Pd合金膜的氫穿透性能,晶體構造的一部分必須為BCC構造。然而於PdCu合金膜的情況,僅將晶體構造的一部分變為BCC構造係無法獲得充分的氫穿透性能。對此,根據本發明,藉由使晶體構造之一部分於氧不存在下變化為BCC構造後,將合金膜於加熱條件下以氧處理,並進一步以還原性氣體處理,從而可提升PdCu合金膜的氫穿透性能。 It is generally considered that in order to improve the hydrogen penetration performance of the Pd alloy film, a part of the crystal structure must be a BCC structure. However, in the case of the PdCu alloy film, only a part of the crystal structure is changed to the BCC structure system, and sufficient hydrogen penetration performance cannot be obtained. In this regard, according to the present invention, by changing a part of the crystal structure to a BCC structure in the absence of oxygen, the alloy film is treated with oxygen under heating conditions, and further treated with a reducing gas, thereby improving the PdCu alloy film Hydrogen penetration performance.

以下,針對各步驟進行詳細說明。 Hereinafter, each step will be described in detail.

步驟1:合金膜的成膜 Step 1: Film formation of alloy film

製作含有Pd及Cu的合金膜。於本實施型態中,藉由使用PdCu鍍液之電鍍來製作合金膜。 An alloy film containing Pd and Cu is produced. In this embodiment, the alloy film is produced by electroplating using PdCu plating solution.

即,首先,準備PdCu鍍液。 That is, first, a PdCu plating solution is prepared.

PdCu鍍液,例如可使用包含二氯四胺鈀等之鈀離子供給源、硫酸銅等之銅離子供給源、及聚磷酸鹽等之添加劑的鍍液。 For the PdCu plating solution, for example, a plating solution containing a palladium ion supply source such as dichlorotetramine palladium, a copper ion supply source such as copper sulfate, and additives such as polyphosphate can be used.

接著,使用所準備之PdCu鍍液,藉由電鍍使含有Pd及Cu的合金膜於導電性基材上析出。 Next, using the prepared PdCu plating solution, an alloy film containing Pd and Cu is deposited on the conductive substrate by electroplating.

鍍層時的浴溫為例如20~80℃,理想為30~70℃,更理想為40~60℃。 The bath temperature at the time of plating is, for example, 20 to 80°C, preferably 30 to 70°C, and more preferably 40 to 60°C.

電流密度為例如0.5~3.0A/dm2,理想為1.0~2.0A/dm2The current density is, for example, 0.5 to 3.0 A/dm 2 , and ideally 1.0 to 2.0 A/dm 2 .

合金膜的厚度為例如1~100μm,理想為3~30μm,更理想為5~20 μm。 The thickness of the alloy film is, for example, 1 to 100 μm, preferably 3 to 30 μm, and more preferably 5 to 20 μm.

此外,電鍍,係於所獲得之合金膜的Pd:Cu比率(原子比)為4:6~6:4的條件下實施,理想為4.5:5.5~5.5:4.5的條件下實施。 In addition, the electroplating is performed under the condition that the Pd:Cu ratio (atomic ratio) of the obtained alloy film is 4:6 to 6:4, and it is ideally performed under the condition of 4.5:5.5 to 5.5:4.5.

另外,使用與合金膜之間的附著力較低的材料(例如SUS304)作為基材之情形,合金膜成膜後,可將合金膜自基材剝離。其結果,可將合金膜單獨作為氫穿透膜利用。 In addition, when a material with low adhesion to the alloy film (for example, SUS304) is used as the substrate, the alloy film can be peeled from the substrate after the alloy film is formed. As a result, the alloy film alone can be used as a hydrogen permeable film.

但,依據用途,亦可不將合金膜自基材剝離,而將基材與合金膜的積層體作為氫分離膜使用。 However, depending on the application, the laminate of the base material and the alloy film may be used as a hydrogen separation membrane without peeling the alloy film from the base material.

步驟2:晶體構造的變換 Step 2: Transformation of crystal structure

於步驟S1成膜的合金膜,一般為FCC(face-centered cubic;面心立方晶格)構造。因此,使該合金膜的晶體構造的至少一部分於氧不存在下變化為BCC構造。具體而言,係使用高真空電爐於減壓狀態下對合金膜進行熱處理。藉由於減壓狀態下進行熱處理,可使合金膜的晶體構造的至少一部分變化為BCC構造。 The alloy film formed in step S1 is generally FCC (face-centered cubic; face-centered cubic) structure. Therefore, at least a part of the crystal structure of the alloy film is changed to the BCC structure in the absence of oxygen. Specifically, the alloy film is heat-treated using a high vacuum electric furnace under reduced pressure. By performing heat treatment under reduced pressure, at least a part of the crystal structure of the alloy film can be changed to the BCC structure.

此時的熱處理溫度,例如理想為300℃以上,更理想為400℃以上。此外,熱處理溫度的上限為例如600℃以下,理想為500℃以下。 The heat treatment temperature at this time is, for example, preferably 300°C or higher, and more preferably 400°C or higher. In addition, the upper limit of the heat treatment temperature is, for example, 600°C or lower, and ideally 500°C or lower.

熱處理時間為例如10分鐘~10小時,理想為20分鐘~5小時,更理想為30分鐘至3小時。 The heat treatment time is, for example, 10 minutes to 10 hours, preferably 20 minutes to 5 hours, and more preferably 30 minutes to 3 hours.

另外,於本說明書中,減壓狀態,係指例如100Pa以下之狀態,理想為50Pa以下之狀態,更理想為10Pa以下之狀態。 In addition, in this specification, the reduced pressure state refers to, for example, a state of 100 Pa or less, preferably a state of 50 Pa or less, and more preferably a state of 10 Pa or less.

步驟3:氧處理 Step 3: Oxygen treatment

接著,於加熱條件下以氧處理合金膜。 Next, the alloy film is treated with oxygen under heating conditions.

具體而言,係將合金膜配置於與步驟S2相同程度的溫度及壓力條件下,於包含合金膜的環境,即高真空電爐中導入含氧氣體(理想為空氣)。氧,係例如使壓力回復到大氣壓力而導入。 Specifically, the alloy film is placed under the same temperature and pressure conditions as in step S2, and an oxygen-containing gas (ideally air) is introduced into an environment containing the alloy film, that is, a high vacuum electric furnace. Oxygen is introduced, for example, to return the pressure to atmospheric pressure.

步驟4:使用還原性氣體之處理 Step 4: Treatment with reducing gas

接著,保持加熱狀態,將包含合金膜的環境再次減壓,變為減壓狀態。 Next, the heating state is maintained, and the environment including the alloy film is decompressed again to become a decompressed state.

接著,於包含合金膜的環境中導入還原性氣體。還原性氣體,係例如直到壓力回復到大氣壓力而導入。 Next, a reducing gas is introduced into the environment containing the alloy film. The reducing gas is introduced, for example, until the pressure returns to atmospheric pressure.

還原性氣體,可使用例如氫、綠氣(3%氫+氬)等,理想為使用氫。 As the reducing gas, for example, hydrogen, green gas (3% hydrogen + argon), etc. can be used, and it is desirable to use hydrogen.

步驟5:冷卻 Step 5: Cool

將合金膜冷卻後,自高真空電爐取出。藉此,可獲得本實施型態之氫穿透膜。 After cooling the alloy film, take it out of the high vacuum electric furnace. Thereby, the hydrogen permeable membrane of this embodiment can be obtained.

另外,PdCu合金膜於低溫條件下(約300℃以下)具有吸藏氫的性質。因此,步驟S4之後,若僅是進行冷卻,合金膜有可能會吸藏氫。吸藏氫後,皮膜有可能會變得堅硬而脆弱。為避免合金膜吸藏氫,理想為於冷卻前將高真空電爐再次減壓,變為減壓狀態。並且,於減壓狀態下進行冷卻後,將壓力回復到大氣壓力。之後,取出合金膜。藉由採用如此之程序,可防止冷卻時之氫的吸藏。 In addition, the PdCu alloy film has the property of storing hydrogen under low temperature conditions (about 300° C. or lower). Therefore, if only cooling is performed after step S4, the alloy film may store hydrogen. After absorbing hydrogen, the membrane may become hard and fragile. In order to prevent the alloy film from absorbing hydrogen, it is desirable to depressurize the high vacuum electric furnace again before cooling to a decompressed state. Then, after cooling under reduced pressure, the pressure is returned to atmospheric pressure. After that, the alloy film is taken out. By adopting such a procedure, hydrogen storage during cooling can be prevented.

2:氫穿透膜 2: Hydrogen penetrating membrane

本實施型態之氫穿透膜具有由上述方法所獲得之合金膜。可將該合金膜單獨作為氫穿透膜使用,亦可將合金膜與其他材料搭配作為氫穿透膜使用。 The hydrogen penetrating membrane of this embodiment has the alloy membrane obtained by the above method. The alloy film can be used alone as a hydrogen penetrating film, or the alloy film can be used as a hydrogen penetrating film in combination with other materials.

另外,藉由上述方法所獲得之合金膜,係具有BCC構造,且Pd:Cu比率(原子比)為4:6~6:4。 In addition, the alloy film obtained by the above method has a BCC structure, and the Pd:Cu ratio (atomic ratio) is 4:6 to 6:4.

合金膜是否具有BCC構造,例如可於X射線繞射中確認。具體而言,在BCC構造存在的情況下,於採用CuKα射線之X射線繞射中,峰存在於繞射角2θ=43±0.5的位置。另一方面,在FCC構造存在的情況下,於採用CuKα射線之X射線繞射中,峰存在於繞射角2θ=42±0.5的位置。 Whether or not the alloy film has a BCC structure can be confirmed by X-ray diffraction, for example. Specifically, in the presence of the BCC structure, in X-ray diffraction using CuKα rays, the peak exists at the position of the diffraction angle 2θ=43±0.5. On the other hand, in the presence of the FCC structure, in X-ray diffraction using CuKα rays, the peak exists at the position of the diffraction angle 2θ=42±0.5.

於上述合金膜中,理想為,於採用CuKα射線之氫穿透膜的X射線繞射中,出現於繞射角2θ=43±0.5的位置之峰的峰強度,比出現於繞射角2θ=42±0.5的位置之峰的峰強度大。 In the above alloy film, it is desirable that in X-ray diffraction using a hydrogen penetrating film of CuKα rays, the peak intensity of the peak appearing at the position of the diffraction angle 2θ=43±0.5 is higher than that at the diffraction angle 2θ The peak intensity at the position of =42±0.5 is large.

如以上所說明,根據本實施型態,將合金膜的晶體構造變換後(步驟S2),藉由實施加熱條件下之氧處理(步驟S3)及使用還原性氣體之處理(步驟S4),可獲得具有高度氫穿透性能之PdCu合金膜。 As described above, according to the present embodiment, after the crystal structure of the alloy film is changed (step S2), by performing oxygen treatment under heating conditions (step S3) and treatment using reducing gas (step S4), A PdCu alloy film with high hydrogen penetration performance is obtained.

根據本實施型態,可獲得具有例如3~20mL/分鐘/cm2的氫穿透性能之合金膜,理想為5~20mL/分鐘/cm2的氫穿透性能之合金膜。另外,此處所謂氫穿透性能,係指在450℃、差壓1氣壓下進行測定所得之值。 According to this embodiment, an alloy film having a hydrogen penetration property of, for example, 3 to 20 mL/min/cm 2 can be obtained, and ideally an alloy film having a hydrogen penetration property of 5 to 20 mL/min/cm 2 . In addition, the hydrogen penetration performance here means the value measured at 450 degreeC and a differential pressure of 1 atm.

另外,本實施型態中,已於步驟1(合金膜的製作)說明藉由電鍍製作合金膜之例。但,即使係在藉由壓延而非電鍍來製作合金膜之情形,藉由實施步驟S2至S4之處理,仍可獲得高度氫穿透性能。 In addition, in the present embodiment, an example of producing an alloy film by electroplating has been described in step 1 (production of alloy film). However, even in the case where the alloy film is produced by rolling instead of electroplating, by performing the processes of steps S2 to S4, a high hydrogen penetration performance can still be obtained.

但,理想係,本實施型態之氫穿透膜所使用之合金膜為電鍍膜為佳。氫穿透性能,係依賴於氫穿透膜之膜厚。膜厚越薄,越能獲得高度氫穿透性能。使用本實施型態之PdCu鍍液之情形下,與壓延法相比,能更容易 穩定地製作薄膜。此外,使用本實施型態之PdCu鍍液之情形下,與壓延法相比,可獲得更緻密且微小的晶體構造之合金膜,其結果,可獲得耐久性優異的合金膜。 However, ideally, the alloy film used in the hydrogen penetrating film of this embodiment is preferably an electroplated film. The hydrogen penetration performance depends on the thickness of the hydrogen penetration film. The thinner the film thickness, the higher the hydrogen penetration performance. In the case of using the PdCu plating solution of the present embodiment, the thin film can be produced more stably than the rolling method. In addition, when the PdCu plating solution of the present embodiment is used, an alloy film with a denser and finer crystal structure can be obtained than the rolling method, and as a result, an alloy film with excellent durability can be obtained.

是否為電鍍膜,係例如藉由觀察合金膜截面的SEM照片而可確認。即,若為電鍍膜,於其截面所觀察到之晶粒大小會比由壓延法等所獲得之膜更小。例如,由20,000倍的SEM照片觀察合金膜的截面時,若於5μm×5μm的視野中最大晶粒的周長為4μm以下,則可推知該合金膜為電鍍膜。若為壓延法等所獲得之膜,該「最大晶粒的周長」一般為超過4μm。 Whether it is a plated film can be confirmed by observing an SEM photograph of the alloy film cross section, for example. That is, if it is an electroplated film, the crystal grain size observed in its cross section will be smaller than that obtained by the rolling method or the like. For example, when the cross-section of the alloy film is observed from a 20,000-times SEM photograph, if the circumference of the largest crystal grain in the field of view of 5 μm×5 μm is 4 μm or less, it can be inferred that the alloy film is a plated film. In the case of a film obtained by the calendering method or the like, the "perimeter of the largest crystal grain" generally exceeds 4 μm.

另外,本實施型態中,已於步驟S2中說明藉由於減壓狀態下進行熱處理,從而使晶體構造變化為BCC構造之例。但,只要係於非氧存在下,不一定必須為減壓狀態,例如,即使於還原性氣體(例如氬及3%氫)之存在下進行熱處理,仍可使晶體構造變化為BCC構造。 In addition, in the present embodiment, an example in which the crystal structure is changed to the BCC structure by performing heat treatment under a reduced pressure state has been described in step S2. However, as long as it is in the presence of non-oxygen, it does not necessarily have to be in a reduced pressure state. For example, even if heat treatment is performed in the presence of a reducing gas (such as argon and 3% hydrogen), the crystal structure can be changed to a BCC structure.

[實驗例] [Experiment example]

接下來,為了更詳細地說明本發明,針對申請人所進行之實驗例進行說明。 Next, in order to explain the present invention in more detail, examples of experiments conducted by the applicant will be described.

[氫穿透性能之研究] [Research on Hydrogen Permeability]

(實施例1) (Example 1)

步驟S1:合金膜之成膜 Step S1: film formation of alloy film

準備PdCu鍍液。作為PdCu鍍液,準備含有二氯四胺鈀(Pd濃度8g/L)、硫酸銅(Cu濃度3g/L)、及聚磷酸鹽之鍍液。 Prepare PdCu plating solution. As the PdCu plating solution, a plating solution containing dichlorotetramine palladium (Pd concentration 8 g/L), copper sulfate (Cu concentration 3 g/L), and polyphosphate was prepared.

準備SUS304作為基材。於所準備之基材上使用所準備之PdCu鍍液進行電鍍,使PdCu合金膜析出。析出後,將PdCu合金膜自基材剝離。 Prepare SUS304 as the base material. The prepared PdCu plating solution is used for electroplating on the prepared substrate to precipitate the PdCu alloy film. After precipitation, the PdCu alloy film was peeled from the substrate.

電鍍之條件如以下所述。 The conditions of electroplating are as follows.

浴溫:50℃ Bath temperature: 50℃

電流密度:1.5A/dm2 Current density: 1.5A/dm 2

藉由EPMA(Electron Probe Micro Analyzer)測定所獲得之合金膜之Pd:Cu原子比,得到5:5。 The Pd:Cu atomic ratio of the obtained alloy film was measured by EPMA (Electron Probe Micro Analyzer) to obtain 5:5.

合金膜的膜厚為10μm。 The film thickness of the alloy film is 10 μm.

步驟S2:減壓狀態下之加熱處理 Step S2: Heat treatment under reduced pressure

接著,將所獲得之合金膜配置於高真空電爐內。使爐內為減壓狀態,並加熱合金膜。加熱溫度為450℃,加熱時間為1小時。 Next, the obtained alloy film is placed in a high vacuum electric furnace. The pressure in the furnace is reduced, and the alloy film is heated. The heating temperature is 450°C and the heating time is 1 hour.

接著,冷卻至室溫後,使壓力回復到大氣壓力,並將合金膜自高真空電爐取出。 Next, after cooling to room temperature, the pressure was returned to atmospheric pressure, and the alloy film was taken out from the high vacuum electric furnace.

步驟S3:高溫狀態下之氧處理 Step S3: Oxygen treatment under high temperature

接著,將合金膜設置於氫穿透量測定裝置。使合金膜的環境再次為減壓狀態。此外,於450℃加熱合金膜。接著,將空氣導入氫穿透量測定裝置內,使壓力回復到大氣壓力。即,實施高溫狀態下之氧處理。 Next, the alloy film was installed in the hydrogen penetration amount measuring device. The environment of the alloy film is reduced again. In addition, the alloy film was heated at 450°C. Next, air was introduced into the hydrogen penetration amount measuring device to return the pressure to atmospheric pressure. That is, the oxygen treatment at a high temperature is performed.

步驟S4:使用氫氣之處理(氫穿透試驗) Step S4: Treatment with hydrogen gas (hydrogen penetration test)

接著,保持加熱狀態,將氫穿透量測定裝置內再次變為減壓狀態。變為減壓狀態後,將氫導入氫穿透量測定裝置內,使壓力回復到大氣壓力。 Next, the heating state is maintained, and the inside of the hydrogen penetration amount measuring device is again brought into a reduced pressure state. After the pressure is reduced, hydrogen is introduced into the hydrogen penetration measuring device to return the pressure to atmospheric pressure.

此時,保持加熱狀態,進行氫穿透試驗,對合金膜的氫穿透性能進行測定。氫穿透試驗係藉由下述之程序實施。於氫穿透量測定裝置內,預先配置合金膜以分隔一次側空間與二次側空間。對一次側空間供給氫,以使一次側空間與二次側空間之間的差壓為1氣壓。接著,對從一次側空間介 由合金膜流向二次側空間之氫的量進行測定。 At this time, the heating state was maintained, a hydrogen penetration test was performed, and the hydrogen penetration performance of the alloy film was measured. The hydrogen penetration test was carried out by the following procedure. In the hydrogen penetration amount measuring device, an alloy film is arranged in advance to separate the primary space and the secondary space. Hydrogen was supplied to the primary space so that the differential pressure between the primary space and the secondary space was 1 atm. Next, the amount of hydrogen flowing from the primary space through the alloy film to the secondary space was measured.

(比較例1) (Comparative example 1)

藉由與實施例1相同的方法,於基材上使用PdCu鍍液,使合金膜成膜。 By the same method as in Example 1, a PdCu plating solution was used on the substrate to form an alloy film.

但,不進行減壓狀態中之加熱處理以後的處理(步驟S2及S3),將成膜的合金膜直接投入氫穿透量測定裝置中。使氫穿透量測定裝置內為減壓狀態後,於室溫下向裝置內導入氫的同時,進行氫穿透試驗,對氫穿透性能進行測定(步驟S4)。 However, the process after the heat treatment in the reduced pressure state (steps S2 and S3) is not performed, and the formed alloy film is directly put into the hydrogen penetration amount measuring device. After the inside of the hydrogen penetration amount measuring device is decompressed, a hydrogen penetration test is performed while introducing hydrogen into the device at room temperature, and the hydrogen penetration performance is measured (step S4).

(比較例2) (Comparative example 2)

藉由與實施例1相同的方法,於基材上使用PdCu鍍液,使合金膜成膜(步驟S1)。與實施例1同樣地,將所獲得之合金膜投入高真空電爐中,於減壓狀態下進行加熱處理(步驟S2)。但,與實施例1不同,不實施高溫狀態下之氧處理(步驟S3),而進行氫穿透試驗(步驟S4)。即,於步驟S2之後,將自高真空電爐取出之合金膜設置於氫穿透量測定裝置,使裝置內為減壓狀態,於450℃加熱後,於裝置內導入氫,進行氫穿透試驗,對氫穿透性能進行測定。 By the same method as in Example 1, a PdCu plating solution was used on the substrate to form an alloy film (step S1). In the same manner as in Example 1, the obtained alloy film was put into a high-vacuum electric furnace, and heat treatment was performed under reduced pressure (step S2). However, unlike Example 1, a hydrogen penetration test (step S4) was performed without performing oxygen treatment at a high temperature (step S3). That is, after step S2, the alloy film taken out from the high-vacuum electric furnace was set in a hydrogen penetration amount measuring device, the inside of the device was reduced in pressure, and after heating at 450°C, hydrogen was introduced into the device to conduct a hydrogen penetration test , To measure the hydrogen penetration performance.

(實施例2) (Example 2)

準備藉由壓延法所製成的PdCu合金膜(膜厚10μm)。對所準備之PdCu合金膜施以與實施例1相同之處理(步驟S1~S4),並進行氫穿透試驗。 A PdCu alloy film (thickness: 10 μm) produced by the rolling method is prepared. The prepared PdCu alloy film was subjected to the same treatment as in Example 1 (steps S1 to S4), and a hydrogen penetration test was performed.

(比較例3) (Comparative example 3)

與實施例2同樣地,準備藉由壓延法所製成的PdCu合金膜(膜厚10 μm)。但與比較例1同樣地,不進行減壓狀態下之加熱處理以後的處理(步驟S2及S3),於室溫下實施氫穿透試驗,對氫穿透性能進行測定。 In the same manner as in Example 2, a PdCu alloy film (thickness: 10 μm) prepared by the rolling method was prepared. However, in the same manner as in Comparative Example 1, after the heat treatment under reduced pressure (steps S2 and S3), a hydrogen penetration test was performed at room temperature, and the hydrogen penetration performance was measured.

(比較例4) (Comparative example 4)

與實施例2同樣地,準備藉由壓延法所製成的PdCu合金膜(膜厚10μm)。之後,與比較例2同樣地進行處理,實施氫穿透試驗。即,對於所獲得之合金膜,於減壓狀態下進行加熱處理(步驟S2)。於減壓狀態持續下冷卻至室溫,冷卻後,使壓力回復到大氣壓力,並將合金膜自高真空電爐取出。之後,將合金膜移至氫穿透量測定裝置,並將裝置內變為減壓狀態,不實施高溫狀態下之氧處理(步驟S3),於450℃加熱,進行氫穿透試驗(步驟S4)。 In the same manner as in Example 2, a PdCu alloy film (thickness: 10 μm) produced by the rolling method was prepared. After that, it was treated in the same manner as in Comparative Example 2 to perform a hydrogen penetration test. That is, the obtained alloy film is subjected to a heat treatment under reduced pressure (step S2). Cool to room temperature under reduced pressure continuously. After cooling, return the pressure to atmospheric pressure and remove the alloy film from the high vacuum electric furnace. After that, the alloy film was moved to a hydrogen penetration amount measuring device, and the inside of the device was reduced in pressure, without performing oxygen treatment at a high temperature (step S3), heating at 450°C, and performing a hydrogen penetration test (step S4) ).

(實施例3) (Example 3)

藉由與實施例1相同的程序,對合金膜的氫穿透量進行測定。但,將氫穿透量測定時的加熱溫度設為300℃而非450℃。 By the same procedure as in Example 1, the hydrogen penetration amount of the alloy film was measured. However, the heating temperature at the time of hydrogen penetration measurement is 300°C instead of 450°C.

實施例1~3及比較例1~4之氫穿透試驗的結果示於表1。 The results of the hydrogen penetration tests of Examples 1 to 3 and Comparative Examples 1 to 4 are shown in Table 1.

如表1所示,於比較例1及比較例3中,氫穿透量為0。即,可得知在不進行減壓狀態下之加熱處理的情況下,合金膜不具有氫穿透性能。此外,於比較例2及4中,氫穿透量(mL/分鐘/cm2)分別為2.30及2.21。確認出藉由在減壓狀態下進行加熱處理,可賦予合金膜氫穿透性能。但,其氫穿透量仍然很小,且無法獲得能夠用作氫穿透膜程度(例如,3mL/分鐘/cm2以上)之氫穿透性能。 As shown in Table 1, in Comparative Example 1 and Comparative Example 3, the hydrogen penetration amount was 0. That is, it can be seen that the alloy film does not have hydrogen penetration performance without performing heat treatment under reduced pressure. In addition, in Comparative Examples 2 and 4, the hydrogen penetration amount (mL/min/cm 2 ) was 2.30 and 2.21, respectively. It was confirmed that by performing heat treatment under reduced pressure, the alloy film can be given hydrogen permeability. However, the amount of hydrogen penetration is still small, and hydrogen penetration performance that can be used as a hydrogen penetration membrane (for example, 3 mL/min/cm 2 or more) cannot be obtained.

另一方面,於實施例1~3中,氫穿透量與比較例2及4相 比顯著提升,具有能夠用作氫穿透膜程度之氫穿透性能,例如3mL/分鐘/cm2以上。即,可得知於減壓狀態的加熱處理之後,藉由進行加熱狀態下之氧處理及使用還原性氣體之處理,與僅進行減壓狀態下之加熱處理之情形相比,氫穿透量顯著提升。 On the other hand, in Examples 1 to 3, the hydrogen penetration amount is significantly improved compared to Comparative Examples 2 and 4, and has a hydrogen penetration performance that can be used as a hydrogen penetration membrane, for example, 3 mL/min/cm 2 or more . That is, after the heat treatment in the reduced pressure state, by performing the oxygen treatment in the heated state and the treatment using the reducing gas, the amount of hydrogen penetration is higher than that in the case where only the heat treatment in the reduced pressure state is performed. Significantly improved.

[表面狀態之研究] [Study on Surface State]

比較例1及3(步驟S1之後、步驟S4之前)、比較例2(步驟S2之後、步驟S4之前)及實施例1及2(步驟S4之後)之合金膜,藉由SEM照片觀察其表面狀態。此外,於實施例1,高溫狀態下之氧處理後、使用氫氣之處理前(步驟S3與S4之間)的樣本,亦藉由SEM照片觀察其表面狀態。SEM照片示於圖1。如圖1所示,比較例1及2、與實施例1之間,表面狀態存在很大的差異。即,可得知藉由在加熱條件下實施氧處理,保持加熱狀態同時再次變為減壓狀態,之後導入氫回復到大氣壓力,從而使合金膜的構造發生變化。 The alloy films of Comparative Examples 1 and 3 (after step S1 and before step S4), Comparative Example 2 (after step S2 and before step S4) and Examples 1 and 2 (after step S4) were observed by SEM photograph . In addition, in Example 1, after oxygen treatment in a high-temperature state and before treatment with hydrogen (between steps S3 and S4), the surface state was also observed by SEM photographs. The SEM photograph is shown in Figure 1. As shown in FIG. 1, Comparative Examples 1 and 2 differ greatly from Example 1 in the surface state. That is, it can be seen that by performing oxygen treatment under heating conditions, the heating state is maintained while the pressure is reduced again, and then hydrogen is introduced to return to atmospheric pressure, thereby changing the structure of the alloy film.

[晶體構造之研究] [Research on crystal structure]

接著,對於比較例1(步驟S1之後、步驟S4之前)及比較例2(步驟S2之後、步驟S4之前)的合金膜,進行X射線繞射強度光譜的測定。測定結果示於圖2。如圖2所示,於比較例1中,僅觀察到FCC構造的峰(圖中,A)。即,可得知於減壓狀態中之加熱處理前的合金膜,為FCC構造。另一方面,比較例2主要呈現出BCC構造的峰(圖中,B),且亦些微觀察到FCC構造的峰。具體而言,於比較例2中,BCC構造的峰之位於繞射角2θ=43±0.5的峰強度,遠大於FCC構造的峰之位於繞射角2θ=42±0.5的峰強度。即,可得知比較例2之合金膜的晶體構造主要為 BCC構造,且些微與FCC構造發生混相。 Next, the alloy films of Comparative Example 1 (after step S1 and before step S4) and Comparative Example 2 (after step S2 and before step S4) were subjected to X-ray diffraction intensity spectrum measurement. The measurement result is shown in Fig. 2. As shown in FIG. 2, in Comparative Example 1, only the peak of the FCC structure was observed (A in the figure). That is, it can be known that the alloy film before the heat treatment in the reduced pressure state has an FCC structure. On the other hand, Comparative Example 2 mainly showed the peak of the BCC structure (B in the figure), and the peak of the FCC structure was also slightly observed. Specifically, in Comparative Example 2, the peak intensity of the peak of the BCC structure at the diffraction angle 2θ=43±0.5 is much larger than the peak intensity of the peak of the FCC structure at the diffraction angle 2θ=42±0.5. That is, it can be seen that the crystal structure of the alloy film of Comparative Example 2 is mainly a BCC structure, and is slightly mixed with the FCC structure.

由X射線繞射強度光譜的結果可得知,藉由在減壓狀態下對合金膜施以加熱處理,晶體構造的至少一部分會由FCC構造變化為BCC構造。然而,即使係於具有BCC構造之比較例2,如表1所示,仍未能獲得充分的氫穿透性能。即,可理解僅使晶體構造變化為BCC構造,係無法獲得所期望之氫穿透性能。 From the results of the X-ray diffraction intensity spectrum, it can be seen that by subjecting the alloy film to heat treatment under reduced pressure, at least a part of the crystal structure changes from the FCC structure to the BCC structure. However, even in Comparative Example 2 with a BCC structure, as shown in Table 1, sufficient hydrogen penetration performance could not be obtained. That is, it can be understood that only changing the crystal structure to the BCC structure cannot achieve the desired hydrogen penetration performance.

[機械特性之研究] [Research on mechanical properties]

與實施例1相同的條件下,使用PdCu鍍液,藉由電鍍使膜厚為5μm及10μm的PdCu合金膜成膜,鍍層後,將合金膜自基材剝離。 Under the same conditions as in Example 1, a PdCu plating solution was used to form a PdCu alloy film with a thickness of 5 μm and 10 μm by electroplating. After the plating, the alloy film was peeled from the substrate.

此外,藉由壓延法,準備膜厚為5μm及10μm的PdCu合金膜。 In addition, by the rolling method, PdCu alloy films with film thicknesses of 5 μm and 10 μm were prepared.

藉由具有圓形的非支撐區域之支撐構件支撐各合金膜。接著,於非支撐區域的中心部位,將棒狀治具垂直按壓在合金膜上,測量直到合金膜破裂為止,合金膜的位移量與棒狀治具所受的力(試驗力)之關係。 Each alloy film is supported by a supporting member having a circular unsupported area. Next, at the center of the unsupported area, the rod-shaped jig was pressed vertically against the alloy film, and the relationship between the displacement of the alloy film and the force (test force) received by the rod-shaped jig until the alloy film was broken was measured.

試驗結果示於圖3。圖3中的各光譜對應以下條件。 The test results are shown in Figure 3. Each spectrum in FIG. 3 corresponds to the following conditions.

光譜A:電鍍5μm Spectrum A: Electroplating 5μm

光譜B:電鍍10μm Spectrum B: Electroplating 10μm

光譜C:壓延膜5μm Spectrum C: calendered film 5μm

光譜D:壓延膜10μm Spectrum D: Rolled film 10μm

如圖3所示,與實施例1相同條件下藉由電鍍成膜的合金膜,其直到膜被戳破為止的位移量及試驗力,與藉由壓延法所獲得之合金膜相比更大。 As shown in FIG. 3, the displacement and test force of the alloy film formed by electroplating under the same conditions as in Example 1 until the film is pierced are larger than those obtained by the rolling method .

即,可得知藉由電鍍所獲得之合金膜比壓延膜更為柔韌,且耐久性優 異。 That is, it can be seen that the alloy film obtained by electroplating is more flexible than the rolled film and has excellent durability.

Figure 108117448-A0202-12-0015-1
Figure 108117448-A0202-12-0015-1

Claims (9)

一種氫穿透膜,其包含含有Pd及Cu的合金膜,其特徵係:前述合金膜為電鍍膜,且具有BCC構造(body-centered-cubic;體心立方晶格);前述合金膜之Pd:Cu比率(原子比)為6:4~4:6。 A hydrogen penetrating film including an alloy film containing Pd and Cu, characterized in that the alloy film is an electroplated film and has a BCC structure (body-centered-cubic; body-centered cubic lattice); and the Pd of the alloy film : The Cu ratio (atomic ratio) is 6:4 to 4:6. 如申請專利範圍第1項所記載之氫穿透膜,其中,前述合金膜的膜厚為1~100μm。 The hydrogen permeable membrane as described in item 1 of the patent application range, wherein the film thickness of the aforementioned alloy membrane is 1 to 100 μm. 一種氫穿透膜的製造方法,其特徵係其具備:製作含有Pd及Cu的合金膜之步驟;使前述合金膜的晶體構造的至少一部分在非氧存在下變化為BCC構造之步驟;在前述變化為BCC構造之步驟之後,於加熱條件下,以氧處理前述合金膜之步驟;以及在前述以氧處理之步驟之後,以還原性氣體處理前述合金膜之步驟。 A method for manufacturing a hydrogen penetrating membrane, characterized by comprising: a step of manufacturing an alloy film containing Pd and Cu; a step of changing at least a part of the crystal structure of the alloy film to a BCC structure in the presence of non-oxygen; After the step of changing to the BCC structure, the step of treating the alloy film with oxygen under heating conditions; and the step of treating the alloy film with reducing gas after the step of oxygen treatment. 如申請專利範圍第3項所記載之製造方法,其中,前述製作合金膜之步驟係包含藉由電鍍將前述合金膜成膜之步驟。 The manufacturing method described in Item 3 of the patent application range, wherein the step of forming the alloy film includes the step of forming the alloy film by electroplating. 如申請專利範圍第3或4項所記載之製造方法,其中,前述變化為BCC構造之步驟係包含在減壓狀態下對前述合金膜進行熱處理之步驟。 The manufacturing method described in item 3 or 4 of the patent application range, wherein the step of changing to the BCC structure includes a step of heat-treating the alloy film under reduced pressure. 如申請專利範圍第3至5項中任一項所記載之製造方法,其中,前述還原性氣體包含氫。 The manufacturing method as described in any one of items 3 to 5 of the patent application range, wherein the reducing gas contains hydrogen. 如申請專利範圍第3至6項中任一項所記載之製造方法,其中,於前述以氧處理之步驟之後,進一步具備將包含前述合金膜之環境變為減壓狀態之步驟;且前述以還原性氣體處理之步驟,係於前述變為減壓狀態之步驟之後,包含將前述還原性氣體導入包含前述合金膜之環境中之步驟。 The manufacturing method as described in any one of items 3 to 6 of the patent application scope, wherein after the step of oxygen treatment, the step of changing the environment containing the alloy film to a reduced pressure state is further provided; and The step of reducing gas treatment includes the step of introducing the reducing gas into the environment containing the alloy film after the step of reducing the pressure to the reduced pressure. 如申請專利範圍第3至7項中任一項所記載之製造方法,其中,前述以還原性氣體處理之步驟係於加熱條件下實施。 The manufacturing method as described in any one of the items 3 to 7 of the patent application scope, wherein the step of treating with the reducing gas is performed under heating conditions. 如申請專利範圍第3至8項中任一項所記載之製造方法,其中,進一步具備於前述以還原性氣體處理之步驟之後,將包含前述合金膜之環境減壓,使其再次變為減壓狀態之步驟;於前述再次變為減壓狀態之步驟之後,將前述合金膜冷卻之步驟;以及於前述冷卻之步驟之後,使包含前述合金膜之環境回復到大氣壓力之步驟。 The manufacturing method as described in any one of the items 3 to 8 of the patent application scope, further comprising after the step of treating with the reducing gas, depressurizing the environment containing the alloy film to make it again reduced The step of pressing the state; the step of cooling the alloy film after the step of becoming the reduced pressure state again; and the step of returning the environment containing the alloy film to atmospheric pressure after the step of cooling.
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