TW201937778A - Laser processing apparatus and laser processing method - Google Patents

Abstract

Provided are laser processing apparatus and laser processing method which may detect deformation of a substrate in real time while processing the substrate using a laser beam. The laser processing apparatus includes: a stage installed so as to locate a substrate inside a chamber; a first detection unit configured to detect reflection light of a laser beam reflected from the substrate; a second detection unit configured to detect a substrate height; and a sensing unit which analyzes collected data and determines deformation of the substrate. The laser processing method includes: irradiating a substrate with a laser beam while moving the substrate in a process direction; detecting reflection light reflected from the substrate and the height of the substrate; and analyzing detected data to detect deformation of the substrate.

Description

Laser processing device and method

The present invention relates to a laser processing device and a laser processing method, and more particularly, to a laser processing device and a laser processing method capable of detecting deformation of a substrate in real time while processing the substrate with the laser.

Manufacturing a display device such as an AMOLED panel involves an excimer laser annealing (ELA) process corresponding to a low-temperature polycrystalline silicon process. In this article, the excimer laser annealing process is a process of forming a polycrystalline silicon (P-Si) film using excimer laser. That is, in the excimer laser annealing process, a pulsed laser beam emitted from an excimer laser light source is formed into a line beam, and an amorphous silicon (a-Si) film on a substrate is irradiated with the line beam, Thereby, the amorphous silicon thin film is crystallized.

A problem with the excimer laser annealing process is that deformation such as warping occurs on the glass substrate. In the related art, after the excimer laser annealing process is completed, the engineer directly inspects the deformation of the processed substrate by using a visual inspection device. That is, there is a problem in that since the engineer directly checks the substrate and checks whether the substrate is abnormal, the result varies according to the skill level of the engineer, and the inspection takes a long time.

The background art of the present invention is disclosed in the following patent documents. [Related Technical Documents] [Patent Documents] (Patent Document 1) KR10-2011-0071591 A (Patent Document 2) KR10-2015-0046425 A

The invention provides a laser processing device and a laser processing method, by which the deformation of a substrate can be detected in real time while processing the substrate with the laser.

According to an exemplary embodiment, a laser processing apparatus includes a chamber having a processing space located in the chamber and a transmission window installed on one side of the chamber; and a platform that is installed to position the interior of the chamber A first detection unit configured to detect reflected light reflected from the substrate; a second detection unit configured to detect a height of the substrate; and a sensing unit to collect data detected by the first detection unit and the second detection unit , Analyze the collected data and determine the deformation of the substrate.

The first detection unit can detect the intensity of the reflected light at each position of the platform, and the second detection unit can detect the height of the substrate for each position of the platform and each section of the substrate.

The second detection unit may be positioned in front of the first detection unit in a processing direction of the substrate.

The sensing unit may include: a collecting part configured to store a value of the detected reflected light intensity and a value of the height of the detected substrate; and an analyzing part that compares the value stored in the collecting part with a reference intensity value and a reference height value Performing a comparison, and using the comparison result to calculate the first region and the second region; and a determining component configured to determine an overlapping region of the first region and the second region as a deformation region.

The laser processing apparatus may include a display unit configured to display a determination result of the sensing unit.

The display unit can display the data collected in the sensing unit and the determination result of the sensing unit on the screen in real time.

According to another exemplary embodiment, a laser processing method includes: positioning a substrate on a propagation path of a laser beam; irradiating the substrate with the laser beam when the substrate is moved in the processing direction; detecting reflected light reflected from the substrate; detecting the substrate Height; and collect and analyze the detected data and use the analysis results to determine the deformation of the substrate.

When detecting the reflected light, the intensity of the reflected light at each position of the platform can be detected, and when detecting the height, the height of the substrate can be detected for each position of the platform and each section of the substrate.

The detection of the reflected light and the detection of the height may be performed together when the substrate is moved, and the position of the detection of the reflected light may be downstream of the position of the height in the processing direction.

Determining the deformation of the substrate may include: a data collection operation that stores a value of the detected reflected light intensity and a detected height value of the substrate; a data analysis operation that compares the detected and collected value with a predetermined reference value, and passes The comparison results are used to calculate the first and second regions; and a determination operation is performed to determine an overlapping region of the first and second regions as a deformation region.

The data analysis operation may include: comparing the value of the detected reflected light intensity with a preset reference intensity value, selecting a value of the detected reflected light intensity whose comparison value is outside the setting range of the error value, and comparing the value corresponding to The area of the platform position having the detected and selected reflected light intensity value is calculated as the first area; and the detected height value of the substrate is compared with a preset reference height value, and the comparison difference is selected to exceed the error value setting The value of the range of the height of the detected substrate is calculated, and the area on the substrate corresponding to the position of the platform having the value of the height of the detected and selected substrate and the section of the substrate is calculated as the second region.

The laser processing method may include outputting collected data and determination results regarding deformation of the substrate.

Output can be performed in real time while moving the substrate.

The deformation may include warping of the substrate, and the substrate may be annealed when the substrate is irradiated with a laser beam.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Indeed, these embodiments are provided so that this invention will be thorough and complete, and these embodiments will fully convey the scope of the inventive concept to those skilled in the art. To describe the exemplary embodiments, the drawings may be enlarged, and in the drawings, the same drawing reference numerals refer to the same elements.

A laser processing apparatus and a laser processing method according to an exemplary embodiment provide a technical feature in which a deformation of a substrate can be detected in real time while the substrate is processed with the laser.

The laser processing apparatus and the laser processing method according to the exemplary embodiments may be applied to an excimer laser annealing process. Of course, the laser processing apparatus and the laser processing method according to the exemplary embodiments can also be used in various laser processing processes of various substrates.

Hereinafter, an exemplary embodiment will be described in detail with reference to an excimer laser annealing process.

FIG. 1 is a schematic diagram of a laser processing apparatus according to an exemplary embodiment. In addition, FIG. 2 is a schematic diagram illustrating a result of an excimer laser annealing process according to an exemplary embodiment.

Hereinafter, a laser processing apparatus according to an exemplary embodiment will be described in detail with reference to FIGS. 1 and 2. A laser processing apparatus according to an exemplary embodiment includes a chamber 10 having a processing space therein and a transmission window 11 mounted on one side thereof, and a platform 20 installed inside the chamber 10 to position the substrate S On the propagation path of the laser beam L, the laser beam L passes through the transmission window 11 and is guided from the outside to the inside of the chamber 10; the first sensing unit 40 detects the reflected light L ′ reflected from the substrate S; Two detection units detect the height of the substrate S; and a sensing unit 60 collects data detected by the first detection unit 40 and the second detection unit 50 and analyzes the deformation of the substrate S.

In addition, the laser processing apparatus according to the exemplary embodiment may further include: a light source (not shown) provided outside the chamber 10 and outputting light such as a laser beam; an optical unit 30 provided between the light source and the transmission window 11 Between them, a light propagation path is formed, and a lens and a mirror are used to process the light in the shape of a linear beam, and a laser beam L processed in the shape of the linear beam is made incident on the transmission window 11; and a deoxidizing module 80 is installed in the chamber On one side of 10 so as to surround the lower surface of the transmission window 11, the laser beam L having passed through the transmission window 11 is guided to the substrate S, and an inert gas atmosphere is formed on the substrate illuminated with the laser beam L.

In addition, the laser processing apparatus according to the exemplary embodiment may further include a display unit 70 that displays a detection result of the sensing unit 60.

The substrate S may be a glass substrate having a rectangular plate shape and an upper surface on which an amorphous silicon thin film is formed. Of course, the substrate S may be any of various substrates, for example, a silicon substrate for manufacturing a semiconductor, on which various processes for forming a thin film, an element, etc. are performed or completed, and the substrate S The shape may be any of various shapes, such as a circular plate or a rectangular plate.

Provide a light source (not shown) to emit laser light. The light source is an element that generates a laser, and various types of lasers can be used depending on the wavelength of the laser beam to be used, such as a KrF excimer laser or an ArF excimer laser.

The chamber 10 may have a processing space therein, and the substrate S may be processed in the processing space. The chamber 10 may have a cylindrical shape having a rectangular cross section. Of course, depending on the shape of the substrate S, the cavity 10 may have various shapes other than a rectangular cylinder. The chamber 10 may have a gate valve (not shown) on a side wall thereof, and the substrate S may be input into the chamber 10 via the gate valve. The chamber 10 may have a transmission window 11 on one side thereof. The transmission window 11 may be installed on one side of the upper wall of the chamber 10 and cover an upper portion of the deoxygenation module 80. The transmission window 11 may be made of a quartz material. The laser beam L can pass through the transmission window 11 and enter the chamber 10.

The platform 20 may be installed to position the substrate S inside the chamber 10. The substrate S may be mounted on the platform 20. The stage 20 can move the substrate S horizontally in the processing direction X. Therefore, the platform 20 can position the substrate S on the propagation path of the laser beam L, which passes through the transmission window 11 and is guided from the outside to the inside of the chamber 10.

The optical unit 30 may have one side connected to the light source and the other end extending toward the transmission window 11. The optical unit 30 may be disposed between the light source and the transmission window 11, and a light propagation path may be formed therein. The optical unit 30 may be provided with a lens system, a mirror, an attenuator, a beam splitter, and a beam cutter. By using these, the optical unit 30 can process light into a linear beam shape, and allow the laser beam L to be processed into a linear beam shape and incident on the transmission window 11.

The laser beam L having passed through the transmission window 11 is emitted onto the upper surface of the substrate S. When the laser beam L is emitted onto the upper surface of the substrate S, the reflected light L ′ is reflected from the upper surface of the substrate S. This reflected light L 'is also called a dump beam.

The first detection unit 40 may be installed at a predetermined position inside the chamber 10 so as to detect the reflected light L ′. The first detection unit 40 may be a pouring beam power meter that can detect the intensity of the reflected light L ′. The substrate region from which the first detection unit 40 detects the reflected light L ′ may be a region extending in the width direction of the substrate S at a plurality of positions in the longitudinal direction of the substrate S. Herein, the longitudinal direction is a direction parallel to the processing direction X, and the width direction Y may be a direction crossing both the processing direction X and the vertical direction. The first detection unit 40 can immediately detect the reflected light L ′ reflected from the substrate S mounted on the platform 20 and moving in the processing direction. That is, the first detection unit 40 can detect the intensity of the reflected light at each position of the platform. Herein, the platform position refers to the position of the platform 20 relative to the processing direction X. The intensity of the reflected light L ′ detected from the first detection unit 40 can be used to detect the deformation of the substrate S. Herein, the deformation of the substrate S may include warping of the substrate.

The first detection unit 40 may be installed inside or outside the chamber 10 so as to be spaced apart from the propagation path of the laser beam L and positioned on the propagation path of the reflected light L ′. In the exemplary embodiment, the first detection unit 40 installed inside the chamber 10 is explained. More specifically, the first detection unit 40 may be installed inside the path of the deoxygenation module 80 and installed to match the propagation path of the reflected light L ′.

The second detection unit 50 can detect the height of the substrate S. The second detection unit 50 may be a laser shift sensor. The second detection unit 50 may be accommodated inside the chamber 10. More precisely, the second detection unit 50 may be positioned above the platform 20 and higher than the substrate S. The second detection unit 50 can detect the height of the upper surface of the substrate S installed on the platform 20 and moving in each position of the platform 20 and the processing direction X of each section of the substrate S in real time. That is, the second detection unit 50 may detect the height of the substrate for each position of the platform and each section of the substrate.

The detection area of the second detection unit 50 may be an area extending in the width direction of the substrate S at a plurality of positions in the longitudinal direction of the substrate S. More specifically, the detection areas of the second detection unit 50 may extend in the width direction of the substrate S at a plurality of positions in the longitudinal direction of the substrate S, and may pass through the upper surface of the substrate S in the processing direction X. The vertical area lines are separated from each other and can be arranged in the width direction Y of the substrate S.

The second detection unit 50 may detect the height of the substrate for each position of the platform and each section of the substrate. Herein, the sections may be regions separated from each other in the processing direction X by virtual longitudinal area lines (not shown) passing through the upper surface of the substrate S. Herein, the longitudinal direction may be a direction parallel to the processing direction X. The height of the substrate S detected from the second detection unit 50 can be used to detect the deformation of the substrate S. The exemplary embodiment illustrates the upper surface of the substrate S divided into five sections from section A to section E.

In the processing direction X of the substrate S, the second detection unit 50 may be in front of the first detection unit 40. In other words, in the processing direction X of the substrate S, the second detection unit 50 may be positioned on the downstream side of the first detection unit 40. That is, the second detection unit 50 is installed to be spaced from the first detection unit in the processing direction X. Herein, the second detection unit 50 may be supported on a side surface of the deoxygenation module 80 or on an inner surface of the chamber 10.

Therefore, from the perspective of the substrate S, when the substrate S first passes under the first detection unit 40, the upper surface of the substrate S is irradiated with the laser beam L, and the reflected light L 'is emitted from the upper surface of the substrate S. This reflected light L ′ is detected by the first detection unit 40. Next, when the substrate S passes under the second detection unit 50, the height of the upper surface of the substrate S can be detected by a laser shifted by the measurement. Therefore, there may be a temporal phase difference between the value of the detected reflected light intensity and the value of the detected height of the substrate. Such a phase difference can be corrected by the sensing unit 60.

The sensing unit 60 may include: a collection part (not shown) that stores a value of the detected reflected light intensity and a value of the height of the detected substrate; and an analysis part (not shown) that stores the value in the collection part Compare with the reference value and the reference height value respectively, and use the comparison results to calculate the first and second regions; and determine a component (not shown) to determine the overlapping region of the first and second regions as the deformation region.

The collecting part collects the data detected by the first detecting unit 40 and the second detecting unit 50, the analyzing part analyzes the collected data, and the determining part can use the analysis result to detect the deformation of the substrate S. The collection part may be connected to the first detection unit 40 and the second detection unit 50. The data collected by the collection means includes the intensity of the reflected light detected by the first detection unit 40 for each position of the platform. In addition, the data collected by the collection means includes the height of the substrate detected by the second detection unit 50 for each section of the substrate S and each position of the platform.

The analysis unit is connected to the collection unit and analyzes the collected data by the following method. The analysis component selects a detection value in which a difference calculated by comparing the detected reflected light intensity value with a reference intensity value exceeds a set error range, and calculates a platform position corresponding to the selected detection value as a first region. Herein, the reference intensity value may be a reference intensity value of reflected light in a normal state. That is, the analysis component compares the predetermined reference intensity value with the detection value detected during the processing, and when an error having at least a predetermined size outside the set error range occurs, the analysis component may calculate its corresponding area as the first Area.

In addition, the analysis component selects a detection value whose difference calculated by comparing the value of the detected height of the substrate with a predetermined reference height value that exceeds a set error range, and compares the platform position and the substrate section corresponding to the selected detection value. Calculated as the second zone. The reference height value may be a reference height of the substrate in a normal state. That is, the analysis component compares the predetermined reference height value with the detected height value detected during processing, and when an error of at least a predetermined size outside the set error range occurs, the analysis component may compare the area on the corresponding substrate S Calculated as the second zone.

Therefore, the analysis unit can compare the predetermined reference value with the value detected during the processing, and thereby calculate each area by analyzing the magnitude of the error.

Meanwhile, when preparing the corresponding processing, the above reference value may be determined during the initial setting process of the processing device. For example, when the substrate S is not deformed, the intensity of the reflected light L ′ reflected from the substrate S may be set as the reference intensity, and the height of the upper surface of the substrate S may be determined as the reference height. In addition, the range of the error value set for each difference can be obtained from the results obtained by examining the deformation of the substrate during the previous excimer laser annealing. There is no particular limitation in the exemplary embodiment.

The determination part is connected to the analysis part, and the analysis result is used to detect the deformation of the substrate S by the following method. The determining part determines an overlapping area of the first area and the second area as a deformed area of the substrate S, and displays this deformed area on the display unit 70. In this article, the determination results are converted into two-dimensional coordinates, and the results can be displayed in the shape of a graph or a chart. At the same time, the overlapping area mentioned above is determined as the central part of the deformation area, and the area surrounding the overlapping area by a predetermined area can also be determined as the peripheral part of the deformation area and output.

The display unit 70 is configured to output a determination result of the sensing unit 60. The display unit 70 can convert the data collected by the sensing unit 60 into a table and output the data on the screen in text form, and convert the determination result of the sensing unit 60 into coordinates and display it on the screen in the form of a graph or chart. The display unit 70 may be provided in the form of, for example, a control program of a device controller that controls the entire process, and may provide each piece of information to the user together with the process control screen.

The deoxygenation module 80 may be installed inside the chamber 10 so as to cover a lower portion of the transmission window 11 and have a passage through the laser beam L. A channel is formed in the vertical direction by passing through the center of the deoxygenation module 80. The channel may have an upper end covered by the transmission window 11 and a lower end opened toward an upper surface of the substrate S. The deoxygenation module 80 may be provided with a gas injection unit therein. The gas injection unit may inject an inert gas to a lower portion of the passage. The inert gas atmosphere may be formed on the substrate S by an inert gas and may prevent oxygen or foreign substances from penetrating into the upper side of the substrate S.

The laser beam L that has passed through the transmission window 11 may pass through the channel of the deoxygenation module 80 and be emitted to the upper surface of the substrate S. When the laser beam L is emitted onto the upper surface of the substrate S, the reflected light L ′ is reflected from the upper surface of the substrate S. The reflected light L ′ may be collected into a channel inside the deoxygenation module 80. The first detection unit 40 may be installed above a passage of the deoxygenation module 80. The reflected light L ′ can be detected by the first detection unit 40.

As described above, in the laser processing device, during the process of emitting the laser beam L and crystallization of the film on the substrate S, the intensity of the dumped beam (for example, the reflected light L ′) and the height of the substrate S are detected in real time, and analyzed The result of the test, and the form of the occurrence of the deformation and the occurrence position can be determined instantly. In addition, the laser processing device can display the determination result in the graphical user interface. Therefore, defects in the excimer annealing process, that is, a substrate on which warpage has occurred, can be determined quickly and immediately.

FIG. 3 is a flowchart of a laser processing method according to an exemplary embodiment. In addition, FIG. 4 is a view illustrating an example of data collected in an excimer laser annealing process to which a laser processing apparatus and a laser processing method according to an exemplary embodiment are applied, and FIG. 5 is a view describing a method for analyzing the View of a method of applying data collected in an excimer laser annealing process of a laser processing apparatus and a laser processing method according to an exemplary embodiment.

In this article, (a) in FIG. 5 is a drawing showing the position of the platform in the collected data, FIG. 5B is a drawing showing the intensity of the reflected light, and (c) in FIG. 5 is a drawing showing the base Height schema. Herein, in FIG. 5, the abscissa of each diagram is an axis showing the execution time of the process.

1 to 5, a laser processing method using a laser processing apparatus according to an exemplary embodiment will be described in detail.

A laser processing method according to an exemplary embodiment includes: placing a substrate on a laser beam propagation path; irradiating the substrate with a laser beam when the substrate is moved in a processing direction; detecting reflected light reflected from the substrate; detecting a height of the substrate; And collect and analyze the detected data and use the analysis results to determine the deformation of the substrate.

First, a substrate S is prepared. The substrate S may be a glass substrate having an upper surface on which an amorphous silicon thin film is formed. The substrate S is loaded into the chamber 10 through a gate valve, and can be mounted on the upper surface of the platform 20.

Next, the substrate S is positioned on the propagation path of the laser beam L. That is, the substrate S is positioned at the processing start position. Next, the substrate S is irradiated with the laser beam L while moving in the processing direction X (S100). Herein, the processing direction X and the moving direction of the stage 20 are the same direction, and the processing direction X and the scanning direction of the laser beam L may be directions opposite to each other. When the thin film on the substrate is irradiated with the laser beam L, deformation of the substrate S may occur. As illustrated in FIG. 1, a curved region R1 may be generated on the substrate S. Comparing the curved region with the normal region R2, it can be understood that the difference between the curved region R1 and the normal region R1. That is, it can be found that the curved region R1 is in a state where the base S is deformed differently from the normal region R2.

When the above process is performed, the reflected light L ′ reflected from the substrate S is detected (S200). The reflected light L ′ is detected by using the first detector 40. More precisely, the intensity of the reflected light at each position in the processing direction X is the intensity of the reflected light at each position on the platform. Such a process can also be said to be a process of observing the amount of change in energy.

Together with the above process, the height of the substrate S is detected (S300). Herein, the height of the base is the height of each section of the base S and the height of each position of the platform. This process can also be said to be the process of observing the amount of deformation of the substrate.

When the substrate S is moved, detection of the reflected light L ′ and detection of the height of the substrate S are performed together at each of the positions spaced apart from each other in the processing direction X. Herein, with regard to the processing direction X, the position on the substrate that detects the reflected light may be the height of the back side of the position on the detection substrate.

That is, the position of the first detection unit 40 is located on the upstream side from the position of the second detection unit 50. Therefore, with respect to the substrate S, the detection of the reflected light L ′ may start earlier than the detection of the height of the substrate S. Herein, the distance d between the first detection unit 40 and the second detection unit 50 may be used to compensate the detected value.

Along with detecting the height of the substrate S, data detected from the detection part is collected and analyzed, and the deformation of the substrate S is determined by using the analysis result (S400). Before the determination, the detection value of each detection component is detected in chronological order with respect to the same platform. In this article, each detection value is arranged for each position of the platform. In addition, the platform position value with respect to each detection value is corrected to match the distance between the first detection unit 40 and the second detection unit 50. That is, when the deformation of the substrate S is determined using the analysis results, the time phase difference of each detected value can be compensated.

For example, when the distance between the first detection unit 40 and the second detection unit 50 in the unit of the platform position is 50, the value of the change amount of the reflected light intensity at 1 at the platform position and 51 at the platform position The value of the amount of change in the height of the substrate matches and can be determined as the value of the amount of change in the intensity of the reflected light at a predetermined same position of the substrate S and the value of the amount of change in the height of the substrate.

Determining the deformation of the substrate S can be performed in the following order: a data collection operation to store the detected reflected light intensity value and a detected height value of the substrate; a data analysis operation to compare the detected and collected value with a predetermined reference Compare the values and calculate the first and second regions using the comparison results; and a determining operation to determine the overlapping region of the first and second regions as the deformation region.

First, collect the data in a collection component. At this time, as illustrated in FIGS. 4 and 5, each of the detection values collected as data is aligned according to the processing time, and may be collected as a relative value with respect to a predetermined value. For example, the platform position when the center of the substrate in the longitudinal direction passes below the transmission window and is irradiated with the laser beam is set to a reference value 0, and the platform position is determined relative to the reference value 0. In addition, regarding the reflected light intensity, the magnitude of the reference intensity value is set to 0, and the detection value is collected as a relative value with respect to the reference intensity value. In addition, regarding the base height, the magnitude of the reference height value is set to 0, and then the detected value is collected at a relative value with respect to the reference height value.

Then, analyze the data. The data analysis operation may include: comparing the detected reflected light intensity value with a reference intensity value, and when the comparison difference exceeds a set error value range, selecting the detected reflected light intensity value, and correspondingly The area where the detection value is the platform position of the selected reflected light intensity is calculated as the first area; and the value of the detected height of the substrate is compared with the reference height value, and when the comparison difference exceeds the set error value range, the detection is selected To the height of the substrate, and the area of the platform corresponding to the height of the selected substrate and the area of the substrate segment on the substrate are calculated as the second region.

That is, as shown in (b) of FIG. 5, the error value range of the reflected light intensity is set to, for example, 0 to 2, and the detected value is selected. Between the detected reflected light intensity value and the reference intensity value, The difference between the detected reflected light intensity value and the reference intensity value exceeds the setting range of the error value, and the area on the substrate corresponding to the platform position with the detected and selected reflected light intensity value is set. Calculated as the first zone.

In addition, the error value range of the height of the substrate is set to, for example, 0 to 0.1, and the detected value is selected, and the difference between the detected value of the height of the substrate and the reference height value, that is, the detected The relative value of the height value exceeds the setting range of the error value, and the area on the substrate corresponding to the platform position and the substrate segment having the value of the height of the detected and selected substrate is calculated as the second region. Herein, in the drawings, the time difference between the first region and the second region is caused by the separation distance d between the first detection unit 40 and the second detection unit 50.

Subsequently, the determination result about the deformation of the base is converted into coordinates and output on the screen in the form of graphs and charts, and the collected data is converted into a table and output to the screen in text form. This can be done immediately during processing, ie while the substrate is being moved.

That is, as shown in FIG. 4, the data collected in the sensing unit 60 is output in text form using the display unit 70, and as shown in FIG. 2, the determination result of the sensing unit 60 is converted into coordinates and in a graphic form Output.

As described above, in the exemplary embodiment, the substrate S is divided into five sections from section A to section E. In addition, when the substrate S mounted on the platform is irradiated with a laser beam and the substrate is annealed while the platform is moved, the reflected light intensity is detected for each of a plurality of positions in the longitudinal direction, and for the longitudinal direction And each of a plurality of positions in the width direction to detect the height of the substrate. Subsequently, the detection result is analyzed, and the calculated overlapping area of the first area and the second area is determined as the deformation area, and therefore, the result is output to the screen. Since such a screen is provided to the user in real time during processing, the deformation of the substrate can be quickly detected, the proportion of defective processes can be reduced, and the yield can be improved. In addition, the conventional visual inspection process is omitted so that the overall processing time can be significantly reduced.

That is, in the laser processing apparatus and the laser processing method according to an exemplary embodiment, the intensity of the dumped beam and the change amount of the height of the substrate are detected according to the position of the platform during the laser annealing process, the detected values are analyzed, and thereby Determines if warping (ie, bending) occurs and the exact location and shape of the warp, and the determination result can be processed and output in a state available to the user.

According to an exemplary embodiment, when a laser is used to process a substrate, various data for detecting a deformed area of the substrate may be collected, the collected data may be analyzed, and the deformed area on the substrate may be detected through an analysis result. These processes can be performed immediately while the substrate is being processed. That is, the deformation of the substrate can be detected immediately. In addition, the detection results and various materials for detection can be provided as images using various forms such as graphics or text.

Therefore, the deformation of the substrate is detected at an early stage, and thus the process defect ratio can be reduced, and the yield can be improved. In addition, the conventional visual inspection process can be omitted so that the overall processing time can be significantly reduced.

The above-mentioned exemplary embodiments are provided not to limit but to describe the present invention. The configurations and methods disclosed in the above exemplary embodiments may be combined or shared with each other to be modified into various forms, and it should be noted that the modified embodiments belong to the scope of the present invention. That is, the present invention can implement various forms different from each other within the scope of the patent application and equivalent technical ideas, and those having ordinary knowledge in the field related to the present invention can understand that it can be within the scope of the technical ideas of the present invention Various embodiments are implemented.

10‧‧‧ chamber

11‧‧‧ Transmission window

20‧‧‧ platform

30‧‧‧Optical unit

40‧‧‧first sensing unit

50‧‧‧Second sensing unit

60‧‧‧sensing unit

70‧‧‧display unit

80‧‧‧deoxygenation module

d‧‧‧distance

L‧‧‧laser beam

L'‧‧‧ reflected light

R1‧‧‧ curved area

R2‧‧‧normal area

S‧‧‧ substrate

S100, S200, S300, S400 ‧‧‧ steps

X‧‧‧ Processing direction

Y‧‧‧Width direction

FIG. 1 is a schematic diagram of a laser processing apparatus according to an exemplary embodiment. FIG. 2 is a schematic diagram illustrating a result of an excimer laser annealing process according to an exemplary embodiment. FIG. 3 is a flowchart of a laser processing method according to an exemplary embodiment. 4 is a view illustrating one example of data collected in an excimer laser annealing process to which a laser processing apparatus and a laser processing method according to an exemplary embodiment are applied. 5 is a view describing a method for analyzing data collected in an excimer laser annealing process to which a laser processing apparatus and a laser processing method according to an exemplary embodiment are applied.

Claims (14)

A laser processing device includes: a chamber having a processing space in the chamber and a transmission window installed on one side of the chamber; a platform that is installed to position a substrate in the chamber Inside; a first detection unit configured to detect reflected light reflected from the substrate; a second detection unit configured to detect a height of the substrate; and a sensing unit to collect passing through the first detection unit and the first The data detected by the second detection unit analyzes the collected data and determines the deformation of the substrate. The laser processing device according to item 1 of the scope of patent application, wherein the first detection unit detects the intensity of the reflected light at each position of the platform, and the second detection unit targets each position of the platform And each section of the substrate to detect the height of the substrate. The laser processing apparatus according to item 1 of the scope of patent application, wherein the second detection unit is positioned in front of the first detection unit in a processing direction of the substrate. The laser processing device according to item 2 of the patent application scope, wherein the sensing unit includes: a collecting unit configured to store a detected value of the reflected light intensity and the detected height of the substrate An analysis component that compares the value stored in the collection component with a value of a reference intensity and a value of a reference height, respectively, and uses the comparison result to calculate the first area and the second area; and a determination component, It is configured to determine an overlapping region of the first region and the second region as a deformation region. The laser processing device according to item 1 of the patent application scope, comprising a display unit configured to display a determination result of the sensing unit. The laser processing device according to item 5 of the scope of patent application, wherein the display unit displays the data collected in the sensing unit and the determination result of the sensing unit on a screen in real time. A laser processing method includes: positioning a substrate on a propagation path of a laser beam; when moving the substrate in a processing direction, irradiating the substrate with the laser beam; detecting reflected light reflected from the substrate Detecting the height of the substrate; and collecting and analyzing the detected data and using the analysis result to determine the deformation of the substrate. The laser processing method according to item 7 of the patent application scope, wherein in detecting the reflected light, the intensity of the reflected light at each position of the platform is detected, and in detecting the height, The height of the substrate is detected at each location and each section of the substrate. The laser processing method according to item 7 of the scope of patent application, wherein when the substrate is moved, detecting the reflected light and detecting the height are performed together, and the position where the reflected light is detected is in a detection processing direction. Downstream of the height position. The laser processing method according to item 8 of the scope of patent application, wherein determining the deformation of the substrate includes: a data collection operation in which a detected value of the reflected light intensity and the detected value of the substrate are stored. A value of a height; a data analysis operation in which the detected and collected values are compared with a predetermined reference value, and the first region and the second region are calculated by using the comparison result; and a determining operation in which the first The overlapping area of one area and the second area is determined as the deformation area. The laser processing method according to item 10 of the patent application scope, wherein the data analysis operation includes: comparing the detected value of the reflected light intensity with a preset reference intensity value, and selecting a comparison difference value exceeding The error value sets a range of the detected value of the reflected light intensity, and sets the value of the platform corresponding to the platform having the detected and selected value of the reflected light intensity on the substrate. The area of the position is calculated as the first area; and the detected value of the height of the base is compared with a preset reference height value, and a detected location where the comparison difference exceeds the error value setting range is selected. The value of the height of the substrate, and a position on the substrate corresponding to the platform having the value of the height of the detected and selected substrate and a region of the substrate The area of the segment is calculated as the second area. The laser processing method according to item 7 of the scope of patent application, which includes outputting the collected data and a determination result about the deformation of the substrate. The laser processing method according to item 12 of the scope of patent application, wherein the data collected and the determination result regarding the deformation of the substrate are performed in real time while the substrate is moved. The laser processing method according to item 7 of the patent application scope, wherein the deformation includes warping of the substrate, and the substrate is annealed when the substrate is irradiated with the laser beam.