TW201935646A - Semiconductor device and manufacturing method thereof prevent the occurrence of the resin on both sides of the notch portion of the lead portion and improve the quality and reliability - Google Patents

Abstract

The invention provides a semiconductor device and its manufacturing method ensuring solderability of lead portions of a leadless type semiconductor device. The DFN has: a semiconductor chip; a die pad; a plurality of lead portions configured at the periphery of the die pad, and formed with a notch portion at the front end portion of each lead portion; a plurality of leads electrically connecting a surface electrode of the semiconductor chip with one of the plurality of lead portions; a sealing body made of resin covering the semiconductor chip and a portion of each of the plurality of lead portions. Moreover, each of the plurality of lead portions has a terminal portion exposed to the rear surface of the sealing body. The width of the notch portion in a direction along an arrangement direction of the plurality of lead portions is smaller than the width of the terminal portion along an arrangement direction.

Description

Semiconductor device and manufacturing method thereof

The present invention relates to, for example, a leadless type semiconductor device and a manufacturing technology thereof.

A method of manufacturing a semiconductor device called a MAP (Mold Array Package) is known. This method uses a sealing body to cover a plurality of device areas uniformly, and cuts each sealing body (Packaging Dicing). And monolithic.

As a MAP manufacturing method, for example, U.S. Patent No. 8017447 (Patent Document 1) discloses a technique in which overmold molding is performed on a lead frame connected to an adjacent structure and formed with a connecting rod. , The laser is irradiated to the groove where the connecting rod is formed to remove the molding material which fills the groove.

In addition, for example, JP-A-2013-143445 (Patent Document 2) discloses a technique of irradiating a pin exposed from a lower surface of a sealing body of a sealed semiconductor wafer with a laser beam, so that the pin is exposed to the first thickness of the pin. A groove is formed adjacent to the side surface of the part, and the lower surface of the side surface and the part is exposed from the sealing body.

Prior art literature

Patent literature

Patent Document 1: US Patent No. 8017447;

Patent Document 2: JP-A-2013-143445.

The leadless package is singulated by cutting the pin terminal and the mold compound with a dicing saw. Therefore, although the lower surface of the pin terminal is covered with a solder-wettable material, the pins The side surfaces of the terminals are not covered with a solder-wettable material. When the mounting substrate is soldered with the solder material, the connection reliability of the outer lower ends of the side pins is poor, and visual inspection of the solder joints is also difficult.

That is, after the outer lower end portion of the side lead is overmolded with the molding compound (a step difference is formed in the connection bar of the lead frame), the molding compound cannot be completely removed only by using the laser to remove the molding compound. The coverage of the solder-wettable material becomes uneven, making it difficult to ensure solderability.

In addition, when using a laser to remove the molding compound, since the laser irradiates the periphery of the outer lower end portion of the side pin (a step difference is formed in the connection frame of the lead frame), molds are generated on both sides of the terminal. Cavitation part of the resin, which may deteriorate the moisture resistance.

An object of the present invention is to provide a technique capable of ensuring solderability of a lead portion of a semiconductor device.

The said objective and novel characteristic of this invention will become clear from description of this application document and attached drawing.

A summary of a representative example among the embodiments disclosed in the present application will be briefly described below.

A semiconductor device according to an embodiment includes a semiconductor wafer, a wafer loading section on which a semiconductor wafer is mounted, and a plurality of pin sections arranged around the wafer loading section, and on a side of the wafer loading section of each lead section. A notch portion is formed at the front end portion on the opposite side. The device further includes a plurality of conductive members for electrically connecting a surface electrode of the semiconductor wafer to one of the lead portions, and a resin-made sealing body for connecting the semiconductor wafer, the plurality of conductive members, and the conductive member. A part of each of the lead portions is covered. Further, each of the lead portions has a terminal portion exposed on the back surface of the sealing body, and the width of the notch portion in a direction along the arrangement direction of the lead portions is larger than that of the terminal portion in the arrangement direction. The width in the direction is small.

The method for manufacturing a semiconductor device according to an embodiment includes the following steps. (A) a step of loading a semiconductor wafer in a wafer loading section of each of the plurality of device formation regions of the lead frame, wherein the lead frame includes the device formation regions and straddles adjacent device formation regions; (B) a step of electrically connecting a surface electrode of each of the plurality of semiconductor wafers to each of the pin portions connected to the connection bar through a conductive member through a conductive member . (C) a step of forming a resin-made uniform sealing body that covers the device formation areas of the lead frame, the connection bar, and the semiconductor wafers; (d) forming a concave shape on the connection bar; A step of removing the resin filled in the stepped portion; (e) a step of cutting the connection bar in the stepped portion of the connection bar to form a single piece. Here, the step (d) includes a step (d1) of irradiating the resin of the stepped portion with a laser; after the step (d1), a water flushing treatment or a liquid polishing treatment is performed to fill the stepped portion. (D2) step of resin removal. Furthermore, in the step (d1), the laser is irradiated in a first direction such that the irradiation width of the laser irradiating the resin of the stepped portion is narrower than the width of the terminal portion formed integrally with the stepped portion. The first direction is the arrangement direction of the lead portions.

Among the inventions disclosed in this application, the effects obtained by the representative inventions will be briefly described as follows.

After injection molding, the resin filled in the stepped portion of the lead frame connection bar is irradiated with laser, and then subjected to a water flushing treatment or a liquid polishing treatment, so that the resin in the stepped portion can be removed. Thereby, the solderability of the lead part of a semiconductor device can be ensured. In addition, by irradiating the laser with the irradiation width of the resin of the stepped portion narrower than the width of the terminal portion, it is possible to prevent cavitation portions of the resin from being generated on both sides of the notch portion of the lead portion, and to improve the semiconductor device Quality and reliability.

FIG. 1 is a perspective view showing an example of a structure on a mounting surface side of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is an enlarged partial perspective view showing a structure of a portion A in FIG. 1.

＜ Semiconductor device ＞

The semiconductor device according to the present embodiment shown in FIG. 1 is a leadless package assembled by a so-called MAP method that is singulated by packaging dicing during assembly. In this embodiment, as an example of a leadless package assembled using the MAP method described above, DFN6 (Dual-Flat No-leads) will be used for description. DFN6 is a semiconductor package in which a plurality of lead portions 2a are arranged along each of two opposite side surfaces 4ca of the resin-made sealing body 4, and a terminal portion 2b of each lead portion 2a is arranged in the sealing body 4 as On the back surface 4b of the mounting surface.

The detailed structure of the DFN6 will be described. The DFN6 includes a semiconductor wafer 1 having a plurality of bonding pads 1c (surface electrodes, electrode pads, bonding) formed on a main surface 1a shown in FIG. 3 described later. Electrode); a die pad 2e, which is a wafer mounting portion on which the semiconductor wafer 1 is mounted; and a plurality of lead portions 2a, which are arranged around the die pad 2e. It also has a plurality of leads 3 (conductive members), and electrically connects the leads 3 (conductive members) of the pad 1c of the semiconductor wafer 1 to a lead portion 2a of the plurality of lead portions 2a (conductive members); made of resin The sealing body 4 covers a part of each of the semiconductor wafer 1, the plurality of leads 3, and the plurality of lead portions 2a.

DFN6 is a type of semiconductor package that generates a large amount of heat from the semiconductor wafer 1. Therefore, the structure is such that the lower surface 2eb of the die pad 2e is exposed on the back surface 4b of the sealing body 4, and the heat from the semiconductor wafer 1 is emitted (or conducted) from the lower surface 2eb of the die pad 2e. As shown in FIG. 3 described later, the semiconductor wafer 1 is mounted on the upper surface 2ea of the die pad 2e via the die bonding material 5. In other words, the back surface 1 b of the semiconductor wafer 1 is fixed to the upper surface 2 ea of the die pad 2 e via the die bonding material 5.

In addition, the sealing body 4 of the DFN 6 has an upper surface 4a (refer to FIG. 3 to be described later) as a mounting surface of the back surface 4b and a surface opposite to the back surface 4b, and four side surfaces between the back surface 4b and the upper surface 4a. 4c. The side surfaces 2d of the plurality of lead portions 2a are exposed on each of the two opposite side surfaces 4ca among the four side surfaces 4c. On the other hand, a cut surface 2ec of a hanging pin (not shown) supporting the die pad 2e is exposed on each of the two opposite side surfaces 4cb among the four side surfaces 4c.

In the DFN 6 of the present embodiment, each of the plurality of lead portions 2 a includes a terminal portion 2 b exposed on the back surface 4 b of the sealing body 4. In addition, in each of the plurality of lead portions 2a, a notch portion 2c is formed at a front end portion on the side opposite to the die pad 2e side. The notch portion 2c is a portion recessed from the back surface 4b and the side surface 4ca of the sealing body 4, and is a portion disposed between the terminal portion 2b and the side surface 2d and connected to the terminal portion 2b and the side surface 2d.

As shown in FIG. 2, the width L1 of the notch portion 2c in the direction along the arrangement direction (first direction) P of the plurality of pin portions 2a is smaller than the width L2 of the terminal portion 2b in the direction along the arrangement direction P ( L1 <L2).

Specifically, resin protruding portions 4d are arranged on both side portions in the arrangement direction P of the cutout portions 2c, and the resin protruding portions 4d protrude inward from both end portions in the arrangement direction P of the terminal portions 2b. Accordingly, the width L1 of the notch portion 2c in the direction along the arrangement direction P of the plurality of pin portions 2a is smaller than the width L2 of the terminal portion 2b in the direction along the arrangement direction P (narrow (L1 <L2)). .

The surface between the resin protruding portions 4d provided on both sides of the notch portion 2c is covered with a metal film. As shown in FIG. 4 described later, the metal film is a solder-wettable film 7. That is, the solder wettability film 7 is a metal film having good wettability to solder, and is, for example, a plating film made of Sn, Pb-Sn, Sn-Bi, or Sn-Ag-Cu.

As shown in FIGS. 1 and 2, each of the plurality of lead portions 2 a of the DFN 6 has a side surface 2 d exposed from the side surface 4 ca of the sealing body 4 and not covered by the metal film. Since the side surface 2d is a surface formed by cutting and forming the metal film at the step portion 2h of the connection bar 2g of the lead frame 2 shown in FIG. 3 described later, the metal film is not covered by the metal film.

Here, the semiconductor wafer 1 is made of, for example, Si, SiC, or the like.

The plurality of lead portions 2 a and the die pad 2 e are made of, for example, a Cu alloy or a Fe—Ni alloy.

The lead 3 is made of, for example, Au, Cu, Al, or Ag.

The sealing body 4 is made of, for example, a thermosetting epoxy resin.

The die bonding material 5 is made of an Ag solder paste, a high melting point solder, a sintered metal, or the like.

<Assembly of semiconductor device>

3 is a flowchart showing an example of an assembling procedure of the semiconductor device shown in FIG. 1, and FIG. 4 is an enlarged partial cross-sectional view showing a structure of a part B of FIG. 3.

In this embodiment, in the description of the assembly of the semiconductor device (DFN6), for ease of understanding, only two device regions 2f provided among a plurality of device regions 2f are used for description.

1. Prepare pin frame 2

First, the lead frame 2 shown in FIG. 3 is prepared. The lead frame 2 includes a plurality of device regions 2f and a connection bar 2g arranged across the adjacent device regions 2f. The device region 2f is a region where one DFN6 is formed. In each device region 2f, a die pad 2e as a wafer loading portion capable of supporting the semiconductor wafer 1 and a plurality of lead portions 2a arranged around the die pad 2e are formed. . In addition, each of the plurality of lead portions 2a is connected to a connection bar 2g.

Further, a step portion 2h is formed in the connecting bar 2g, which is recessed from the surface side of the lead portion 2a on which the terminal portion 2b is formed. The step portion 2h is formed by, for example, etching processing. Therefore, the cross-sectional shape of the stepped portion 2h is configured as a curved shape (R shape), and the recessed stepped portion 2h is disposed across the adjacent device region 2f.

2. Chip Mounter

After the lead frame 2 is prepared, the patch shown in step S1 of FIG. 3 is performed. Here, the semiconductor wafer 1 is mounted on the die pad 2e of each of the plurality of device regions 2f. At this time, the semiconductor wafer 1 is mounted on the upper surface 2ea of the die pad 2e via a die bonding material 5 (also referred to as a die attach material). Thereby, the back surface 1b of the semiconductor wafer 1 is fixed to the upper surface 2ea of the die pad 2e via the die bonding material 5.

3． Wire Bonding

After mounting, wire bonding is performed as shown in step S2 in FIG. 3. Here, a pad portion 1c of each of the plurality of semiconductor wafers 1 and a certain pin portion 2a of the plurality of pin portions 2a connected to the connection bar 2g pass through the lead 3 (conductive member, wiring Material) and electrical connection.

4． Over Molding

After the wire bonding, the secondary injection molding shown in step S3 of FIG. 3 is performed. Here, a resin-made uniform sealing body 4e is formed, which collectively covers the plurality of device regions 2f of the lead frame 2, the step portions 2h of the connection bar 2g, the plurality of semiconductor wafers 1, and the plurality of leads 3. That is, the resin 4ea (molding compound) is also filled in the concave step portion 2h (the step portion 2h is covered with the resin 4ea) through the overmolding. On the other hand, as shown in step S3 of FIG. 3, the secondary injection is performed so that the lower surface 2eb of the die pad 2e and the terminal portion 2b of the connection bar 2g are not covered with the resin 4ea (plastic compound).

5． Remove resin

After the secondary injection, the resin is removed as shown in step S4 in FIG. 3. Here, the resin 4ea filled in the concave step portion 2h of the connecting bar 2g is removed. Specifically, the resin 4ea filled in the step portion 2h is irradiated with the laser 8a shown in FIG. 6 described later to remove the resin 4ea.

Here, the removal of the resin 4ea by the irradiation laser will be described in detail. FIG. 5 is a partial perspective view showing an example of a state of a stepped portion of the connection bar after injection molding in the assembly of the semiconductor device shown in FIG. 1, and FIG. 6 is a view showing a state where the laser is irradiated to the stepped portion shown in FIG. 5. A partial perspective view of an example of a state. FIG. 7 is a partial perspective view of an example of a scanning state during laser irradiation shown in FIG. 6. Further, FIG. 8 is a partial perspective view showing an example of an irradiation width during laser irradiation shown in FIG. 6, and FIG. 9 is a partial perspective view showing a structure of a cavity state of the sealing body after laser irradiation in a comparative example.

As shown in FIG. 5, the resin 4ea is filled into the step portion 2h of the connecting bar 2g through the overmolding. Therefore, in the present embodiment, first, as shown in FIG. 6, the resin 4ea filled in the stepped portion 2h is irradiated with the laser 8a from the laser oscillating portion 8 to remove the resin 4ea of the stepped portion 2h.

At this time, as shown in FIG. 7, the scanning method is transmitted in the longitudinal direction (second direction) Q crossing the arrangement direction (first direction) P of each of the plurality of lead portions 2 a (see FIG. 1). The laser 8a shown in FIG. 6 is irradiated so that the laser 8a strikes the boundary 2i (that is, the edge portion of the terminal portion 2b) of the step portion 2h of the connection bar 2g and the terminal portion 2b. That is, the step 2h is irradiated like the irradiation trace 8b shown in FIG. 7 of the laser 8a, and the laser 8a is irradiated to the boundary between the step 2h and the terminal portion 2b in the length direction Q. In the 2i method, the laser 8a is repeatedly irradiated on the step 2h. In addition, the trajectory of the irradiation of the level difference portion 2h by the laser 8a may be a trajectory that is repeatedly irradiated in one direction, or a trajectory that is repeatedly irradiated. Thereby, in addition to the step portion 2h, the edge portion of the terminal portion 2b is irradiated with the laser 8a, so that the resin 4ea of the step portion 2h can be removed.

Furthermore, in the present embodiment, when the laser 8a is irradiated, as shown in FIG. 7 and FIG. 8, the resin 4ea is irradiated with the resin 4ea on the step portion 2h in the arrangement direction P of the plurality of lead portions 2a. The irradiation width L3 of the radiation 8a is narrower (L3 <L2) than the width L2 of the terminal portion 2b formed integrally with the step portion 2h, and the resin 4ea is irradiated with the laser 8a by a scanning method.

Specifically, in the length direction Q of the lead portion 2a, the resin 4ea of the step portion 2h is repeatedly irradiated with the laser 8a by a scanning method. At this time, control is performed so that the laser 8a does not shine on both sides of the step portion 2h shown in the R portion shown in FIG. 7, that is, the trajectory of the laser 8a is the irradiation trajectory 8b. That is, the laser 8a is controlled to irradiate so that the end portion of the irradiation position of the laser 8a in the arrangement direction P is a portion inside the extension lines T1 and T2 of the end portion of the terminal portion 2b shown in FIG. 8.

In other words, as shown in FIG. 6 and FIG. 8, the laser 8 a is controlled to be irradiated so that the resin 4 ea of the step portion 2 h in the arrangement direction P of the plurality of lead portions 2 a irradiates the irradiation width L3 of the laser 8 a. It is narrower than the width L2 of the terminal portion 2b (L3 <L2). As a result, resin protruding portions 4d are formed on both side portions of the cutout portion 2c so as to protrude inward than the extension lines T1 and T2. In other words, the two sides of the laser 8a in the arrangement direction P of the step portion 2h are irradiated so that the resin protruding portions 4d are formed so as to protrude more inward than the both ends in the arrangement direction P of the terminal portion 2b.

As a result, the width L3 of the opening in the notched portion 2c (the stepped portion 2h) in the arrangement direction P is narrower (smaller) than the width L2 of the terminal portion 2b in the arrangement direction P.

As a result, it is possible to prevent the occurrence of the resin cavitation portions 9 formed on both side portions of the notch portion 2c of the lead portion 2a as shown in the comparative example of FIG. 9. That is, it is possible to avoid the resin cavitation portions 9 generated on both side portions of the cutout portion 2c.

In addition, it is preferable to control the laser 8a to irradiate so that, in the notch portion 2c (the height difference portion 2h in FIG. 7) shown in FIG. 8, the irradiation width L3 of the laser 8a in the alignment direction P and A half of the difference in the width L2 of the terminal portion 2b (the non-irradiation width 15 of the laser 8a) is a desired value. As an example, the desired value is about 30 μm. This is, for example, the size of the sum of the three elements based on the actual crossing of the etching process of the target on the lead frame 2, the deviation crossing of the laser irradiation position, and the positive margin. The target on the lead frame 2 is used to identify the laser. Location during irradiation. In other words, by controlling the above-mentioned desired value (non-irradiation width 15 of the laser 8a), the resin cavitation portion 9 can be avoided, and the opening area of the step portion 2h (notch portion 2c) can be secured.

After the laser irradiation, a water jet treatment or a liquid Honing treatment is performed. Here, FIG. 10 is a partial perspective view showing an example of a state of the residual resin in the stepped portion after the laser irradiation shown in FIG. 6, and FIG. 11 shows a state in which the residual resin shown in FIG. 10 is removed by a water flushing process. FIG. 12 is a partial perspective view of an example of a state where the residual resin shown in FIG. 10 is removed by a liquid polishing process.

When the irradiation of the resin 4ea on the step portion 2h by the laser 8a is completed, as shown in FIG. 10, there is a residual resin 4f remaining as a resin in the step portion 2h of the connection bar 2g. The residual resin 4f is a residual of the resin which is not completely removed only by laser irradiation. Therefore, any one of a water flushing process and a liquid polishing process is performed to remove the residual resin 4f of the step 2h.

In the case of performing a water flushing process, as shown in FIG. 11, the liquid 10a is ejected from the nozzle 10, and the residual resin 4f as an object adhered to the stepped portion 2h is impacted, thereby removing the residual resin 4f from the stepped portion. Removed in 2h. On the other hand, in the case of performing a liquid polishing process, as shown in FIG. 12, a slurry 11 a (Slurry) is sprayed from a spray gun 11, and a residual resin 4 f as an object adhered to the stepped portion 2 h is sprayed. Thereby, the residual resin 4f is removed from the step portion 2h. In addition, removal of the residual resin 4f at the step portion 2h is performed at the step portion 2h as long as it is performed within a range of effective sizes that contributes to solder bonding during DFN mounting. That is, outside the range of the effective size described above, even if the residual resin 4f is present.

In this embodiment, in the resin removing step after the second injection, first, the laser 8a is irradiated to the step portion 2h of the connecting bar 2g, and thereafter, it can be removed without residue by performing a water flushing treatment or a liquid polishing treatment. The resin 4ea filled or adhered to the step 2h.

6. Cover metal film

After the resin is removed, the metal film is covered as shown in step S5 in FIG. 3. Here, the exposed surface of the step portion 2h of the connection bar 2g, the terminal portion 2b of the lead portion 2a, and the lower surface 2eb of the die pad 2e are covered with a solder wettability film 7 as a metal film. The solder wettability film 7 is a metal film having good solder wettability, and is, for example, a plating film made of Sn, Pb-Sn, Sn-Bi, or Sn-Ag-Cu.

7. Monolithic

After covering the metal film, singulation is performed as shown in step S6 in FIG. 3. Here, the connection bar 2g is cut at the step portion 2h of the connection bar 2g to be singulated into individual DFN6. At this time, the dicing machine 14 is used to cut the height difference portion 2h with a width smaller than the width of the height difference portion 2h in the longitudinal direction Q (see FIG. 5) crossing the arrangement direction P. That is, the dicing machine 14 with a width smaller than the width of the step portion 2h of the connecting bar 2g in the longitudinal direction Q is used for cutting and singulation. As shown in FIG. 4, the notch portion 2 c formed between the side surface 2 d of each of the plurality of lead portions 2 a and the terminal portion 2 b formed by the cutting is exposed by the surface covered by the solder wet film 7. . In other words, the notch portion 2c covered with the solder-wettable film 7 is placed below the side surface 2d of each of the plurality of lead portions 2a.

Through the above steps, the production of DFN6 shown in FIG. 1 is completed.

<Mounting Structure of Semiconductor Device>

FIG. 13 is an enlarged partial cross-sectional view showing an example of a terminal portion bonding portion of the mounting structure of the semiconductor device shown in FIG. 1. In addition, FIG. 13 illustrates a terminal portion bonding portion in a structure in which the DFN 6 shown in FIG. 1 is mounted on the conductor pattern 12 a of the mounting substrate 12. That is, the conductor pattern 12 a of the mounting substrate 12 and the lead portion 2 a of the DFN 6 are electrically connected through the solder 13.

In addition, as shown in FIG. 13, the lead portion 2 a of the DFN 6 is formed with a recessed notch portion 2 c that is connected to the terminal portion 2 b on the mounting surface side and has a concave shape, and is covered on each of the terminal portion 2 b and the notch portion 2 c Solder wettable film 7. This makes it possible to improve the wettability of the solder 13 to the lead portion 2 a.

In particular, by forming the notch portion 2c covered by the solder-wettable film 7 on the lead portion 2a, the solder 13 can be wetted upwardly above the notch portion 2c of the lead portion 2a, thereby forming fillet welding of the solder 13 with a high height. Seam 13a.

This can increase the mounting strength of the DFN6.

＜ Effects ＞

According to the manufacturing method of DFN6 according to this embodiment, after the second injection, the resin 4ea filled in the step portion 2h of the connecting bar 2g of the lead frame 2 is irradiated with a laser 8a, and further subjected to water flushing or liquid polishing. By processing, the resin 4ea of the step portion 2h can be removed without residue.

Thereby, the solder-wettable film 7 can be uniformly covered in the step portion 2h (notch portion 2c), and the solderability of the lead portion 2a of the DFN 6 can be ensured.

In addition, the irradiation width L3 of the resin 4ea of the step 4h of the lead frame 2g 2h of the lead frame 2 through the laser 8a is narrower than the width L2 of the terminal portion 2b (L3 <L2). Resin cavitation portions are generated on both sides of the notch portion 2c of the lead portion 2a, which can improve the quality and reliability of the DFN6.

The formation of the step portion 2h of the connection bar 2g of the lead frame 2 can be easily performed by an etching process.

In addition, laser irradiation, water flushing, or liquid grinding for removing the resin at the step 2h of the connecting strip 2g can be easily performed by a known process, and can be performed without introducing a new process.

In addition, as for the method of irradiating the laser 8a to a range inside the both sides of the notch portion 2c of the lead portion 2a, laser irradiation can also be performed by a known process based on a scanning method, and the accuracy can be easily ensured.

In addition, according to the DFN 6 of this embodiment, a notch portion 2c is formed at the tip end portion of each lead portion 2a, and a solder wettability film 7 is formed at the notch portion 2c. In the mounting structure, a fillet weld of the solder 13 can be formed. 13a, visual inspection of a solder joint can be performed.

In addition, the notch portions 2c are formed in each of the lead portions 2a of the DFN6, and the notch portion 2c is covered by the solder wettability film 7, so that the solder 13 wets up above the notch portion 2c of the lead portion 2a, so that a high height can be formed Fillet 13a of the solder 13. As a result, the mounting strength of DFN6 can be improved.

In addition, in DFN6, since the laser cavitation portion 9 can be avoided by laser irradiation on both sides of the notch portion 2c of each lead portion 2a, it is possible to suppress a decrease in the moisture resistance of DFN6.

In addition, by forming the resin protrusions 4 d on both side portions of the notch portion 2 c in each of the lead portions 2 a of the DFN 6, it is possible to suppress the respective lead portions 2 a from falling off from the sealing body 4. As a result, the quality of DFN6 can be improved.

The invention completed by the present inventors has been specifically described based on the embodiments, but the invention is not limited to the embodiments described above, and it is possible to make various changes without departing from the scope of the invention.

For example, in the embodiment described above, as an example of a leadless semiconductor device, DFN6 has been described, but the semiconductor device can be a QFN (Quad-Flat Non-leaded) Be applicable.

In addition, in the above-mentioned embodiment, as the semiconductor device, the structure in which the die pad 2e on which the semiconductor wafer 1 is mounted is exposed from the back surface 4b of the sealing body 4 has been described, but the semiconductor device may be a die pad 2e embedded. A die pad embedded structure that is inserted into the sealing body 4.

1‧‧‧ semiconductor wafer

1a‧‧‧Main face

1b‧‧‧ back

1c‧‧‧pad

2‧‧‧ lead frame

2a‧‧‧ Lead section

2b‧‧‧Terminal

2c‧‧‧Notch

2d‧‧‧side

2e‧‧‧die pad

2ea‧‧‧upper surface

2eb‧‧‧ lower surface

2ec‧‧‧ Section

2f‧‧‧Device Area

2g‧‧‧Connector

2h‧‧‧Level difference

2i‧‧‧ border

3‧‧‧ Lead

4‧‧‧Sealed body

4a‧‧‧upper surface

4b‧‧‧ back

4c, 4ca, 4cb‧‧‧ side

4d‧‧‧ resin protrusion

4e‧‧‧ unified seal

4ea‧‧‧ resin

4f‧‧‧Residual resin

5‧‧‧ die bonding material

6‧‧‧DFN

7‧‧‧Solder Wetting Film

8‧‧‧Laser Oscillation Unit

8a‧‧‧laser

8b‧‧‧ Irradiation trajectory

9‧‧‧ resin cavitation part

10‧‧‧ Nozzle

10a‧‧‧Liquid

11‧‧‧jet gun

11a‧‧‧slurry

12‧‧‧Mounting base

12a‧‧‧Conductor pattern

13‧‧‧Soldering

13a‧‧‧ fillet weld

14‧‧‧ Dicing Machine

15‧‧‧Non-irradiation width

T1, T2‧‧‧ extension cable

L1, L2, L3‧‧‧Width

Q‧‧‧length direction

P‧‧‧Arrangement direction

FIG. 1 is a perspective view showing an example of a structure on a mounting surface side of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is an enlarged partial perspective view illustrating a structure of a portion A in FIG. 1.

FIG. 3 is a flowchart showing an example of an assembling procedure of the semiconductor device shown in FIG. 1.

FIG. 4 is an enlarged partial cross-sectional view illustrating a structure of a part B in FIG. 3.

FIG. 5 is a partial perspective view showing an example of a state of a stepped portion of the connection bar after molding in the assembly of the semiconductor device shown in FIG.

FIG. 6 is a partial perspective view showing an example of a state in which a laser is irradiated to the step portion shown in FIG. 5.

FIG. 7 is a partial perspective view showing an example of a scanning state during laser irradiation shown in FIG. 6.

FIG. 8 is a partial perspective view showing an example of an irradiation width during laser irradiation shown in FIG. 6.

FIG. 9 is a partial perspective view showing a structure of a cavitation state of a sealing body after laser irradiation in a comparative example.

FIG. 10 is a partial perspective view showing an example of a state of residual resin in the stepped portion after the laser irradiation shown in FIG. 6.

FIG. 11 is a partial perspective view showing an example of a state in which the residual resin shown in FIG. 10 is removed by a water flushing process.

FIG. 12 is a partial perspective view showing an example of a state in which the residual resin shown in FIG. 10 is removed through a liquid polishing process.

FIG. 13 is an enlarged partial cross-sectional view showing an example of a lead portion bonding portion of the mounting structure of the semiconductor device shown in FIG. 1.

Claims (9)

A semiconductor device includes: a semiconductor wafer; a wafer loading section on which the semiconductor wafer is loaded; a plurality of pin sections arranged around the wafer loading section, and the wafer in each of the pin sections A notch portion is formed at the front end portion on the opposite side of the loading portion side; a plurality of conductive members are electrically connected to the surface electrode of the semiconductor wafer and one of the lead portions; a sealing body made of resin, It covers each of the semiconductor wafer, the conductive members, and the lead portions, and each of the lead portions has a portion exposed on a back surface of the sealing body. A terminal portion, the width of the notch portion in a direction along an arrangement direction of the pin portions is smaller than the width of the terminal portion in a direction along the arrangement direction. The semiconductor device according to claim 1, wherein the two sides of the notch portion in the arrangement direction are provided with resin protrusions, and the resin protrusions are directed toward the two ends of the terminal portion in the arrangement direction. Stick out inside. The semiconductor device according to claim 2, wherein a surface of the cutout portion disposed between the resin protruding portions is covered by a metal film. The semiconductor device according to claim 3, wherein each of the lead portions has a side surface exposed from the sealing body and not covered by the metal film. A method of manufacturing a semiconductor device, comprising the following steps: (a) a step of loading a semiconductor wafer in a wafer loading portion of each of the device formation regions of a lead frame, wherein The lead frame has the device formation regions and a connection bar arranged across the adjacent device formation regions; (b) after the step (a), the semiconductor wafers in a plurality of semiconductor wafers are passed through a conductive member; A step of electrically connecting each surface electrode of the semiconductor wafer with each of the plurality of pin portions connected to the connecting strip; (c) after the step (b), forming the pin frame The step of forming a unified sealing body made of resin with the device forming area, the connection bar, and the semiconductor wafers; (d) after the step (c), the concave shape of the connection bar A step of removing a resin filled in a step portion; (e) after the step (d), a step of cutting the connection strip at the step portion of the connection strip to perform singulation Here, the step (d) includes: a step (d1) of irradiating the resin on the stepped portion with a laser; after the step (d1), a water flushing treatment or a liquid polishing treatment is performed to reduce the A step (d2) of removing the resin filled in the difference portion; and in the step (d1), in a first direction, the irradiation width ratio of the laser irradiating the resin to the stepped portion is smaller than the irradiation width ratio of the laser The laser is irradiated with a narrow width of a terminal portion integrally formed by the stepped portion, wherein the first direction is an arrangement direction of the pin portions. The method for manufacturing a semiconductor device according to claim 5, wherein when the laser is irradiated, the laser is irradiated to both sides of the stepped portion in the first direction, so that a resin protruding portion faces The terminal portion protrudes inside of both end portions in the first direction. The method for manufacturing a semiconductor device according to claim 5, wherein each of the lead portions is irradiated with the scanning method in a second direction crossing the first direction of the lead portions. The laser makes the laser shine on the boundary between the step portion of the connection bar and the terminal portion. The method for manufacturing a semiconductor device according to claim 5, wherein the exposed surface of the stepped portion is covered with a metal film between the step (d) and the step (e). The method for manufacturing a semiconductor device according to claim 6, wherein in the step (e), a dicing machine is used to intersect the first direction with the second step in a second direction that intersects the first direction. The width of the upper and lower portions is cut, so that the stepped portion is cut off, so that a gap formed between the side of the pin portion and the terminal portion is formed by the cutting. The part of the surface covered by the metal film is exposed.